JP2019071329A - Substrate bonding method and substrate bonding apparatus - Google Patents

Abstract

To solve a problem in which distortion occurs between substrates to be released from holding at least due to the atmosphere interposed between the substrates to be joined, the crystal anisotropy of the substrates to be released from holding, or the like to cause misalignment between the bonded substrates when substrates are bonded as a pair.SOLUTION: A substrate bonding method includes a first bonding step of bonding a first substrate to another member while causing distortion in the first substrate and a second bonding step of bonding the first substrate and a second substrate while causing distortion in the second substrate while maintaining the distortion generated in the first substrate, and the first bonding step includes a step of determining a bonding condition of the first substrate and another member on the basis of information on distortion estimated to occur in the second substrate when the first substrate and the second substrate are bonded.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a substrate bonding method and a substrate bonding apparatus.

There is known a method of bonding two substrates to each other by releasing the holding of one of the substrates after aligning the substrates while holding the substrates in each of the two holding parts facing each other (for example, Patent Document) 1).
[Patent Document 1] JP-A-2015-95579

  In the above method, when joining both substrates, distortion occurs in the substrates to be released due to the atmosphere interposed between the substrates to be joined and the crystal anisotropy of the substrates to be released. Misalignment occurs between the bonded substrates.

  In one aspect of the present invention, after the convexly deformed protruding portion of the first substrate is brought into contact with another member to form a first contact area, the first contact area is expanded to thereby form a first contact area. In the first bonding step of bonding the first substrate and the other member while causing distortion in the first substrate, and in a state in which the second substrate is deformed in a state in which the distortion generated in the first substrate is maintained. The protrusion portion is brought into contact with the first substrate joined to the other member to form a second contact area, and then the second contact area is expanded to cause the second substrate to be distorted. Bonding the second substrate to the second substrate, and the first bonding step is estimated to occur on the second substrate when the first substrate and the second substrate are bonded. A substrate including determining a bonding condition for bonding the first substrate and the other member based on the information on the distortion If a method is provided.

  In another aspect of the present invention, a first substrate held by a first holding member includes a first holding member holding a first substrate and a second holding member holding a second substrate. Forming a first contact area by bringing the protruding portion in a convex shape into contact with another member, and then expanding the first contact area, thereby causing the first substrate to be distorted while the first substrate is being generated And the other member are joined, and the convexly deformed projecting portion of the second substrate held by the second holding member is brought into contact with the strained first substrate to make the second contact area A substrate bonding apparatus for bonding a first substrate and a second substrate while causing distortion in a second substrate by expanding a second contact region after forming the first substrate and the second substrate. And the first substrate based on the information on distortion assumed to occur in the second substrate when the two substrates are joined. Substrate bonding device comprising a determination unit which determines the joining conditions for joining the members is provided.

  The above summary of the invention does not enumerate all of the necessary features of the present invention. Subcombinations of these features may also be inventive.

FIG. 2 is a schematic plan view of the substrate bonding apparatus 100. FIG. 2 is a schematic plan view of a substrate 210, 230. 5 is a flowchart showing a procedure of bonding the substrate 210 and the substrate 230. They are a schematic plan view (A) of substrate holder 220 holding substrate 210, and a schematic plan view (B) of substrate holder 240 holding bare silicon 250. FIG. 7 is a schematic cross-sectional view of a joint 300. FIG. 7 is a schematic cross-sectional view of a joint 300. FIG. 7 is a schematic cross-sectional view of a joint 300. FIG. 7 is a schematic cross-sectional view of a joint 300. It is a typical sectional view showing the state of substrate 210 and bare silicon 250 in a joining process. FIG. 7 is a schematic cross-sectional view of a joint 300. It is a typical sectional view showing the state of substrate 210 and bare silicon 250 in a joining process. It is a schematic plan view which shows the state of the board | substrate 210 with which bare silicon 250 was joined, and the board | substrate 230 in a joining process. It is a schematic plan view which shows the state of the board | substrate 210 with which bare silicon 250 was joined, and the board | substrate 230 in a joining process. FIG. 16 is a partial enlarged view showing a bonding process of bare silicon 250 and substrate 210 on substrate holder 240 for fixed side. FIG. 16 is a partial enlarged view showing a bonding process of bare silicon 250 and substrate 210 on substrate holder 240 for fixed side. FIG. 16 is a partial enlarged view showing a bonding process of bare silicon 250 and substrate 210 on substrate holder 240 for fixed side. It is a schematic diagram which shows the position shift in the multilayer substrate 292 by magnification distortion. It is a model which shows the relationship between the crystal orientation and Young's modulus in the silicon monocrystal substrate 208. FIG. It is a model which shows the relationship between the crystal orientation and Young's modulus in the silicon monocrystal substrate 209. FIG. It is the elements on larger scale which show the joining process of the board | substrate 210 joined with the bare silicon 250, and the board | substrate 230 on the board | substrate holder 240 for stationary sides. 15 is a flowchart showing another procedure for bonding the substrate 210 and the bare silicon 250. It is a typical sectional view showing the state of substrate 210 in a bonding process. It is a typical sectional view showing the state of substrate 210 and bare silicon 250 in a joining process. It is a typical sectional view showing the state of substrate 210 and bare silicon 250 in a joining process. FIG. 25 is a partial enlarged view showing a bonding process of the substrate 210 bonded to the bare silicon 250 and the substrate 230 on the stationary side substrate holder 240 when the bonding procedure shown in FIG. 21 to FIG. 24 is used. . It is a flowchart which shows the procedure of carrying out main joining of the board | substrate 210 and the board | substrate 230, and thinning. 10 is a flowchart showing a procedure of bonding a laminated substrate 290 consisting of a substrate 210 and a substrate 230 and the substrate 260. FIG. 10 is a schematic cross-sectional view showing the state of the stacked silicon substrate 290 made of the substrates 210 and 230 and the bare silicon 250 in the bonding process. FIG. 10 is a schematic cross-sectional view showing the state of the stacked silicon substrate 290 made of the substrates 210 and 230 and the bare silicon 250 in the bonding process. FIG. 14 is a schematic cross-sectional view showing the state of the laminated substrate 290 including the substrate 210 and the substrate 230 joined to the bare silicon 250 and the substrate 260 in the bonding process. FIG. 14 is a schematic cross-sectional view showing the state of the laminated substrate 290 including the substrate 210 and the substrate 230 joined to the bare silicon 250 and the substrate 260 in the bonding process. The bonding process between the substrate 260 and the laminated substrate 290 consisting of the substrate 210 and the substrate 230 joined to the bare silicon 250 on the stationary side substrate holder 240 in the case of using the procedure shown in FIG. 26 to FIG. FIG. FIG. 16 is a schematic cross-sectional view showing a laminated substrate 290 formed of the substrate 210 and the substrate 230 bonded to the bare silicon 250 and a laminated substrate 290 formed of the substrate 270 and the substrate 280 in the bonding process. FIG. 16 is a schematic cross-sectional view showing a laminated substrate 290 formed of the substrate 210 and the substrate 230 bonded to the bare silicon 250 and a laminated substrate 290 formed of the substrate 270 and the substrate 280 in the bonding process. A laminated substrate 290 consisting of the substrate 210 and the substrate 230 joined to the bare silicon 250, the substrate 270 and the substrate 280 on the stationary side substrate holder 240 when the joining procedure shown in FIGS. 33 to 34 is used. FIG. 16 is a partially enlarged view showing the bonding process with the laminated substrate 290 made of It is a flowchart which shows the procedure of carrying out main joining of the board | substrate 210 and the board | substrate 230 which bare silicon 250 joined, and thinning. FIG. 16 is a flow chart showing a procedure for bonding a laminated substrate 290 consisting of the substrate 210 and the substrate 230 to which the bare silicon 250 is bonded and the substrate 260. FIG. FIG. 17 is a schematic cross-sectional view showing the lower stage 332 and the laminated substrate 290 including the substrate 210 and the substrate 230 to which the bare silicon 250 is bonded in the bonding process. FIG. 17 is a schematic cross-sectional view showing the lower stage 332 and the laminated substrate 290 including the substrate 210 and the substrate 230 to which the bare silicon 250 is bonded in the bonding process. FIG. 16 is a schematic cross-sectional view showing the state of the substrate 260 and the laminated substrate 290 consisting of the substrate 210 and the substrate 230 to which the bare silicon 250 is joined joined to the lower stage 332 in the joining process. FIG. 16 is a schematic cross-sectional view showing the state of the substrate 260 and the laminated substrate 290 consisting of the substrate 210 and the substrate 230 to which the bare silicon 250 is joined joined to the lower stage 332 in the joining process. FIG. 36 shows a bonding process of the substrate 260 and the laminated substrate 290 including the substrate 210 and the substrate 230 to which the bare silicon 250 is bonded, which is bonded to the lower stage 332, when the procedure shown in FIG. 36 to FIG. FIG. In the bonding process, a laminated substrate 290 consisting of a substrate 210 and a substrate 230 joined with the bare silicon 250 joined to the lower stage 332, and a laminated substrate 290 consisting of a substrate 270 and a substrate 280 joined with bare silicon 255 It is a typical sectional view showing the state of. In the bonding process, a laminated substrate 290 consisting of a substrate 210 and a substrate 230 joined with the bare silicon 250 joined to the lower stage 332, and a laminated substrate 290 consisting of a substrate 270 and a substrate 280 joined with bare silicon 255 It is a typical sectional view showing the state of. In the case of using the bonding procedure shown in FIGS. 43 to 44, bare silicon 255 is bonded to laminated substrate 290 made of substrate 210 and substrate 230 to which bare silicon 250 is bonded, which is bonded to lower stage 332. FIG. 16 is a partially enlarged view showing a bonding process with a laminated substrate 290 including a substrate 270 and a substrate 280. 10 is a flowchart showing a procedure for peeling the bonded substrate 210 and the bare silicon 250 before bonding the substrate 210 and the substrate 230. It is a typical sectional view showing the state of substrate 210 and bare silicon 250 in a joining process. It is a typical sectional view showing the state of substrate 210 and bare silicon 250 in a joining process. It is a typical sectional view showing the state of substrate 210 and bare silicon 250 in a joining process. It is a typical sectional view showing the state of substrate 210 and bare silicon 250 in a joining process. It is a typical sectional view showing the state of substrate 210 and substrate 230 in a joining process. 15 is a flowchart showing another procedure of bonding the laminated substrate 290 consisting of the substrate 210 and the substrate 230 and the substrate 260. FIG. 10 is a schematic cross-sectional view showing the state of the stacked silicon substrate 290 made of the substrates 210 and 230 and the bare silicon 250 in the bonding process. FIG. 14 is a schematic cross-sectional view showing the state of the laminated substrate 290 including the substrate 210 and the substrate 230 joined to the bare silicon 250 and the substrate 260 in the bonding process. FIG. 14 is a schematic cross-sectional view showing the state of the laminated substrate 290 including the substrate 210 and the substrate 230 joined to the bare silicon 250 and the substrate 260 in the bonding process. It is a schematic diagram which shows the position shift in the laminated substrate 290 by the nonlinear distortion which arises when the substrates 210 and 230 have a local curve. It is a figure explaining the measurement method of bending measurement and curvature. FIG. 10 is a schematic cross-sectional view of a portion of a joint 600. FIG. 6 is a schematic view showing a layout of an actuator 612. FIG. 16 is a schematic view showing an operation of a part of the bonding section 600.

  Hereinafter, embodiments of the invention will be described. The following embodiments do not limit the claimed invention. Not all combinations of features described in the embodiments are essential to the solution of the invention.

  FIG. 1 is a schematic plan view of a substrate bonding apparatus 100. FIG. The substrate bonding apparatus 100 includes a casing 110, substrates 210 and 230 to be bonded, a substrate cassette 120 for containing bare silicon 250, a laminated substrate 290 manufactured by bonding at least two substrates 210 and 230, and a bare A holder stocker 400 accommodating the substrate cassette 130 accommodating the silicon 250, the control unit 150, the transport unit 140, the joint unit 300, the substrates 210 and 230, and the substrate holders 220 and 240 holding the bare silicon 250; And a pre-aligner 500. The inside of the housing 110 is temperature-controlled, for example, kept at room temperature. The bare silicon 250 is an unprocessed silicon wafer on which elements, circuits, terminals and the like are not formed.

  The transport unit 140 is formed by stacking single substrates 210 and 230, bare silicon 250, substrate holders 220 and 240, substrates 210 and 230, and substrate holders 220 and 240 holding bare silicon 250, and a plurality of substrates 210 and 230. The stacked substrate 290 and the like are transported. The control unit 150 cooperates with each other in the substrate bonding apparatus 100 to control them collectively. Further, control unit 150 receives a user's instruction from the outside, and sets manufacturing conditions in the case of manufacturing laminated substrate 290. Furthermore, the control unit 150 also has a user interface for displaying the operating state of the substrate bonding apparatus 100 toward the outside.

  The joint 300 has an upper stage 322 and a lower stage 332 opposed to each other. The upper stage 322 holds the substrate 210, 230 or bare silicon 250 via the substrate holder 220 or the substrate holder 240. Similarly, the lower stage 332 holds the substrate 210, 230 or the bare silicon 250 through the substrate holder 220 or the substrate holder 240. The upper stage 322 and the lower stage 332 may directly hold the substrate 210, 230 or the bare silicon 250, respectively. Junction 300 is any set of substrates 210 and 230 and bare silicon 250 held by upper stage 322 and lower stage 332, for example, substrate 210 and bare silicon 250 in a state of being bonded to each other. Align the substrate 230 with each other. Thereafter, the one set is held by one of the stages, and holding of the other set by the other stage is released, whereby the sets are brought into contact with each other and joined. In this bonding method, the substrate 210 or 230 or the bare silicon 250 which is held in the one stage may be referred to as the fixed side substrate 210 or 230 or the bare silicon 250. Also, the substrate 210 or 230 or the bare silicon 250 released from the state held by the other stage at the time of bonding may be referred to as the substrate 210 or 230 or the bare silicon 250 on the release side.

  Here, the bonded state may refer to a state in which terminals provided on two stacked substrates are connected to each other to thereby ensure electrical conduction between the two substrates. In addition, terminals provided on two stacked substrates may be connected to each other, which may indicate a state in which the bonding strength of the two substrates is equal to or higher than a predetermined strength. When the two substrates are finally electrically connected by performing a process such as annealing on the two stacked substrates, the two substrates are temporarily bonded before the process such as annealing. It may refer to a state of being in contact, that is, a state of being temporarily joined. In addition, when the bonding strength of the two substrates is equal to or higher than a predetermined strength by performing the processing such as annealing on the two stacked substrates, the above temporary bonding is indicated before the processing such as annealing. May be The state in which the bonding strength is equal to or higher than the predetermined strength by annealing includes, for example, a state in which the surfaces of the two substrates are covalently bonded to each other. In addition, the state of being temporarily bonded includes a state in which two overlapping substrates can be separated and reused.

  The pre-aligner 500 aligns the substrates 210 and 230 and the bare silicon 250 with the substrate holders 220 and 240, respectively, and holds the substrates 210 and 230 and the bare silicon 250 on the substrate holders 220 and 240. The substrate holders 220 and 240 are formed of a hard material such as alumina ceramics, and adsorb and hold the substrates 210 and 230 and the bare silicon 250 by an electrostatic chuck, a vacuum chuck or the like.

  In the substrate bonding apparatus 100 as described above, in addition to the substrates 210 and 230 on which elements, circuits, terminals and the like are formed, bare silicon 250, which is a unprocessed silicon wafer on which a structure is not formed, is added Alternatively, a SiGe substrate, a Ge single crystal substrate, a compound semiconductor wafer of III-V group or II-VI group, a glass substrate or the like can be bonded. An object to be bonded may be a circuit board and a non-processed substrate, or may be non-processed substrates. The substrates 210, 230 and bare silicon 250 to be bonded may themselves be a laminated substrate 290 having a plurality of substrates already laminated. The substrates 210 and 230 and the bare silicon 250 to be bonded have, for example, substantially the same external dimensions in the unstrained state.

  FIG. 2 is a schematic plan view of the substrates 210 and 230 bonded in the substrate bonding apparatus 100. The substrates 210, 230 each have a notch 214, 234, a plurality of circuit areas 216, 236, and a plurality of alignment marks 218, 238.

  The plurality of circuit regions 216 and 236 are an example of a structure formed on the surface of each of the substrates 210 and 230, and periodically arranged in the planar direction on each surface of the substrates 210 and 230. Each of the plurality of circuit regions 216 and 236 is provided with a structure such as a wiring or a protective film formed by a photolithography technique or the like. In the plurality of circuit regions 216 and 236, connection portions such as pads and bumps serving as connection terminals when the substrates 210 and 230 are electrically connected to the other substrates 230 and 210 and lead frames are also arranged. The connection portion is also an example of a structure formed on the surface of the substrate 210, 230.

  The plurality of alignment marks 218 and 238 are also an example of a structure formed on the surface of the substrate 210 and 230, and are disposed on scribe lines 212 and 232 disposed between the plurality of circuit regions 216 and 236. Ru. The plurality of alignment marks 218, 238 are indicators for aligning the substrate 210, 230 with the other substrate 230, 210 or the bare silicon 250. The scribe lines 212 and 232 are indicators for dicing the substrates 210 and 230 into chips. A plurality of alignment marks 218 are formed on at least the surface of bare silicon 250 not shown in a schematic plan view.

  FIG. 3 is a flow chart showing a procedure for bonding the substrate 210 and the substrate 230 in the substrate bonding apparatus 100. First, the control unit 150 acquires information on distortion estimated to occur in the substrate 230 when the substrate 210 and the substrate 230 are joined (step S101), and based on the acquired information, the substrate 210 and the bare silicon 250 And bonding conditions are determined (step S102). Here, the control unit 150 determines that the substrate 210 is to be released and the bare silicon 250 is to be fixed according to the determined bonding conditions. In addition, the control unit 150 controls the temperature control device, the dehumidifying / humidifying device, the air pressure regulator, the gas inflow device, the activation device, etc. to achieve the determined joining condition, for example, the transport unit 140, the pre-aligner 500, Output to the junction 300 or the like. Control unit 150 may include a determination unit that determines such a bonding condition.

  Next, based on the output from the control unit 150, the transport unit 140 selects one substrate holder 220 from among the plurality of release side substrate holders 220 having different curvatures of the holding surface 221, and selects the selected substrate holder The substrate 220 and the substrate 210 are sequentially carried into the pre-aligner 500 (step S103). In the pre-aligner 500, the substrate 210 is held by the substrate holder 220 (step S104). As for the bare silicon 250 on the stationary side, the transport unit 140 sequentially forms the substrate holder 240 for the stationary side and the bare silicon 250 on the stationary side into the pre-aligner 500 sequentially based on the output from the control unit 150 similarly to the substrate 210. Then, the bare silicon 250 is held by the substrate holder 240 in the pre-aligner 500 (step S104).

  FIG. 4 is a schematic plan view (A) of the substrate holder 220 holding the substrate 210 and a schematic plan view (B) of the substrate holder 240 holding the bare silicon 250, which are used in step S104. The substrate holder 220 has a cross-sectional shape that gradually increases in thickness from the peripheral portion to the central portion. This has a curved smooth holding surface 221. The substrate 210 held by suction by the substrate holder 220 is in close contact with the holding surface 221 and is curved following the shape of the holding surface 221. Therefore, when the surface of the holding surface is a curved surface, for example, a cylindrical surface, a spherical surface, a paraboloid or the like, the shape of the adsorbed substrate 210 changes so as to form such a curved surface. The substrate holder 240 has a flat and smooth holding surface 241. The bare silicon 250 held by suction to the substrate holder 240 comes in close contact with the holding surface 241 and becomes flat following the shape of the holding surface 241.

  5 to 8 and 10, which are referred to as appropriate in the following description, are schematic cross-sectional views of the bonding portion 300. As shown in FIG. As shown in FIG. 5, based on the output from the control unit 150, the transport unit 140 carries the substrate holder 220 holding the substrate 210 onto the lower stage 332 of the bonding unit 300, and holds the bare silicon 250. Is carried onto the upper stage 322 of the joint 300 (step S105).

  The upper stage 322 has a holding function such as a vacuum chuck and an electrostatic chuck, and is fixed to the top plate 316 of the frame 310 downward. In the state shown in FIG. 5, the upper stage 322 already holds the substrate holder 220 in the state of holding the substrate 210.

  The lower stage 332 has a holding function such as a vacuum chuck or an electrostatic chuck, and is mounted on the upper surface of the Y-direction driving unit 333 superimposed on the X-direction driving unit 331 disposed on the bottom plate 312 of the frame 310. In the state shown in FIG. 5, the lower stage 332 already holds the substrate holder 240 in the state of holding the substrate 230. In each of FIGS. 5 to 8 and FIG. 10, the holding surface 221 of the substrate holder 220 is drawn flat for simplification of the description.

  A microscope 324 and an activation device 326 are fixed to the top plate 316 to the side of the upper stage 322. The microscope 324 can observe the upper surface of the substrate 210 held by the lower stage 332.

  The activation device 326 generates plasma that cleans the top surface of the substrate 210 held indirectly by the lower stage 332. In the activation device 326, for example, oxygen gas which is a processing gas is excited into plasma in a reduced pressure atmosphere, and oxygen ions are irradiated to the respective bonding surfaces of the two substrates, for example, the substrate is a SiO film on Si. In the case of a substrate on which is formed, the bond of SiO at the bonding surface is broken to form a dangling bond of Si and O. Forming such dangling bonds on the surface of the substrate may be referred to as activation. When exposed to the atmosphere in this state, the moisture in the air bonds to the dangling bond and the substrate surface is covered with OH groups. As a result, the surface of the substrate is in a state of being easily bonded to water molecules, that is, in a state of being easily hydrophilized. That is, activation results in a state in which the surface of the substrate is likely to be made hydrophilic. The hydrophilizing device for hydrophilizing the surface of the substrate is not shown, but it is applied to the bonding surface of the two substrates, for example, with pure water to hydrophilize the bonding surface and to clean the bonding surface.

  The X-direction drive unit 331 moves in the direction indicated by the arrow X in the figure in parallel to the bottom plate 312. The Y-direction drive unit 333 moves on the X-direction drive unit 331 in parallel with the bottom plate 312 in the direction indicated by the arrow Y in the drawing. By combining the operations of the X-direction driving unit 331 and the Y-direction driving unit 333, the lower stage 332 moves in two dimensions in parallel with the bottom plate 312.

  Further, the lower stage 332 is supported by the elevation drive unit 338, and is raised and lowered in the direction indicated by the arrow Z in the figure by the drive of the elevation drive unit 338. Thus, the lower stage 332 holds the substrate 210 held by the substrate holder 220 and the substrate held by the substrate holder 240 between the lower stage 332 and the upper stage 322 holding the substrate holder 220 in the state of holding the substrate 210. The relative position with 230 is displaced.

  The amount of movement of the lower stage 332 by the X-direction drive unit 331, the Y-direction drive unit 333 and the elevation drive unit 338 is accurately measured using an interferometer or the like.

  A microscope 334 and an activation device 336 are mounted on the side of the lower stage 332 in the Y-direction driver 333. The microscope 334 can observe the surface which is the lower surface of the substrate 230 held by the upper stage 322. The activation device 336 generates a plasma that cleans the surface of the substrate 230. The activation devices 326 and 336 are provided in a device different from the bonding portion 300, and the substrate with the surface activated and the substrate holder are transported from the activation devices 326 and 336 to the bonding portion 300 by a robot. It is also good.

  The joint unit 300 may further include a rotational drive unit that rotates the lower stage 332 about a rotational axis perpendicular to the bottom plate 312, and a swing drive unit that swings the lower stage 332. Thus, the lower stage 332 can be made parallel to the upper stage 322, and the substrate 210 held by the lower stage 332 can be rotated to improve the alignment accuracy of the substrates 210 and 230.

  The microscopes 324 and 334 are calibrated by the control unit 150 by focusing each other and observing a common index. Thereby, the relative position of the pair of microscopes 324 and 334 at the joint 300 is measured.

  The substrate bonding apparatus 100 may further include a temperature control device, a dehumidifying / humidifying device, an air pressure regulator, and a gas inflow device. The temperature control device is provided, for example, in the frame of the substrate bonding apparatus 100, and controls the temperature of the gas sent around the stage by the blower. A dehumidifying and humidifying device is also provided, for example, in the frame of the device, and regulates the humidity of the gas sent around the stage by the blower. A gas inlet is also provided in the frame of the device to select the type of gas that is pumped around the stage by the blower. The air pressure regulator has a pressure pump provided in the frame of the substrate bonding apparatus 100, and adjusts the air pressure in the frame with the pressure pump.

  Subsequently to the state shown in FIG. 5, as shown in FIG. 6, the control unit 150 operates the X-direction driving unit 331 and the Y-direction driving unit 333 to make the substrates 210 and the bare silicon 250 by the microscopes 324 and 334. The alignment marks 218 provided on each are detected (step S106).

  Next, the relative positions of the substrate 210 and the bare silicon 250 are calculated by detecting the positions of the alignment mark 218 of the substrate 210 and the bare silicon 250 with the microscopes 324 and 334 whose relative positions are known (step S107). Thereby, when the substrate 210 and the bare silicon 250 are aligned, the amount of positional deviation between the corresponding alignment marks 218 in the substrate 210 and the bare silicon 250 is equal to or less than a predetermined threshold, or In the case of the alignment between 210 and the substrate 230, in addition to this, the amount of positional deviation of the corresponding circuit area 216, 236 or the connection between the substrate 210 and the substrate 230 becomes equal to or less than a predetermined threshold. Thus, the relative movement amount between the substrate 210 and the substrate 230 is calculated. The misalignment may refer to misalignment of the corresponding alignment marks 218, 238 between the bonded substrate 210 and the bare silicon 250, or between the bonded substrate 210 and the substrate 230, bonding The positional deviation between the corresponding connection portions between the substrate 210 and the substrate 230 may be indicated. The misalignment may be due to the difference in the amount of distortion that occurs on each of the two substrates 210, 230.

  Here, the threshold value may be a shift amount that enables electrical conduction between the substrates 210 and 230 when bonding of the substrates 210 and 230 is completed, and provided on the substrates 210 and 230, respectively. It may be an amount of deviation when at least a part of the structures contact with each other. When the positional deviation between the substrates 210 and 230 becomes equal to or greater than a predetermined threshold value, the control unit 150 does not contact each other or can not obtain appropriate electrical continuity, or a predetermined value between junctions. It may be judged that it is in the state where the joint strength of can not be obtained.

  Subsequently to the state shown in FIG. 6, as shown in FIG. 7, the control unit 150 records the relative position between the substrate 210 and the bare silicon 250, and chemically bonds each bonding surface of the substrate 210 and the bare silicon 250. (Step S108). First, the control unit 150 resets the position of the lower stage 332 to an initial position and then moves it horizontally to scan the surfaces of the substrate 210 and the bare silicon 250 with the plasma generated by the activation devices 326 and 336. This cleans the surface of each of the substrate 210 and the bare silicon 250, resulting in high chemical activity. The activation of the substrate 210 and the bare silicon 250 in step S108 may be performed before the step S106, or may be performed before the substrate 210 and the bare silicon 250 are carried into the substrate bonding apparatus 100.

  In addition to the method of exposure to plasma, the surfaces of the substrate 210 and the bare silicon 250 can also be activated by sputter etching using an inert gas, ion beam, fast atom beam or the like. In the case of using an ion beam or a high-speed atom beam, the junction 300 can be generated under reduced pressure. Furthermore, the substrate 210 and the bare silicon 250 can be activated by ultraviolet irradiation, ozone asher or the like. In addition, the surface of the substrate 210 and the bare silicon 250 may be activated by chemical cleaning, for example, using a liquid or gaseous etchant. After activation of the surfaces of the substrate 210 and the bare silicon 250, the surfaces of the substrate 210 and the bare silicon 250 may be hydrophilized by a hydrophilization device.

  Following the state shown in FIG. 7, as shown in FIG. 8, the control unit 150 aligns the substrate 210 and the bare silicon 250 with each other (step S109). The control unit 150 first lowers the lower stage 332 so as to coincide with each other based on the relative positions of the microscopes 324 and 334 detected first and the positions of the alignment mark 218 of the substrate 210 and the bare silicon 250 detected in step S106. Move

  FIG. 9 is a schematic cross-sectional view showing the state of the substrate 210 and the bare silicon 250 in the bonding process. FIG. 9 shows the state of the substrate 210 and the bare silicon 250 in the state of step S109 shown in FIG. As shown, the substrate 210 and the bare silicon 250 held on the upper stage 322 and the lower stage 332 via the substrate holders 220 and 240 face each other in alignment with each other. As illustrated, the flat substrate 210 is attracted to the substrate holder 220 having the curved holding surface 221 and deformed so as to follow the curved surface, so the distance between the opposing substrate 210 and the bare silicon 250 is , And around the center of the substrate 210 and the bare silicon 250 is smaller than the peripheral portion.

  Subsequent to the state shown in FIGS. 8 and 9, as shown in FIG. 10, the control unit 150 operates the elevation driving unit 338 to raise the lower stage 332, and the substrate 210 and the bare silicon 250 are mutually exchanged. Get close. Then, the protruding portion of the substrate 210 deformed in a convex shape by contacting the curved holding surface 221 of the substrate holder 220 is brought into contact with the bare silicon 250 to form a contact region, and then the substrate 210 is expanded by widening the contact region. Bonding the substrate 210 and the bare silicon 250 while causing distortion. More specifically, first, the substrate 210 and the bare silicon 250 are brought close to each other, and the substrate 210 and a part of the bare silicon 250 are brought into contact with each other to form a junction region at the already activated contact point. Furthermore, by releasing the holding of the substrate 210 by the substrate holder 220, the region adjacent to the contact point is autonomously attracted to each other by the intermolecular force between the activated surfaces, and the bonding region is the substrate 210 and the like. Bonding waves are generated that sequentially extend outward in the radial direction of the bare silicon 250, thereby bonding the substrate 210 and the bare silicon 250 while causing distortion in the substrate 210 (step S110). The bonding area is an example of the contact area. As such, joining the joining surfaces with each other by activation of the joining surfaces may be referred to as direct bonding.

  FIG. 11 is a schematic cross-sectional view showing the state of the substrate 210 and the bare silicon 250 in the bonding process. FIG. 11 schematically shows in cross section the state of the substrate 210 and the bare silicon 250 in the state of step S110 shown in FIG. Thus, by using the substrate holder 220 having the curved holding surface 221, only one contact point is formed on the substrate 210 and the bare silicon 250, as a result, a plurality of contact points are formed separately. It is possible to suppress the occurrence of voids in the bonding surface due to

  During the processes shown in FIGS. 5 to 11, the transport unit 140 sequentially carries in the substrate holder 220 for release side and the substrate 230 to the pre-aligner 500 based on the output from the control unit 150 (step S111). . Then, in the pre-aligner 500, the substrate 230 is held by the substrate holder 220 (step S112).

  Subsequently to the state illustrated in FIG. 11, the transport unit 140 subsequently carries the substrate holder 220 holding the substrate 230 into the bonding unit 300 and fixes it to the upper stage 322 based on the output from the control unit 150 ( Step S113). During this time, the substrate 210 joined to the bare silicon 250 is in a state of being fixed to the lower stage 332 via the substrate holder 240. The control unit 150 operates the X-direction driving unit 331 and the Y-direction driving unit 333 to detect the alignment marks 218 and 238 provided on each of the substrate 210 and the substrate 230 by the microscopes 324 and 334 whose relative positions are known. (Step S114).

  Next, based on the positions of the alignment marks 218 and 238 detected by the microscopes 324 and 334, the relative position between the substrate 210 and the substrate 230 is calculated (step S115). Then, the control unit 150 records the relative position between the substrate 210 and the substrate 230, and chemically activates the bonding surface of each of the substrate 210 and the substrate 230 (step S116). The activation of the substrate 210 and the substrate 230 in step S116 may be performed before step S114. In addition, activation of the substrate 230 may be performed before the substrate 230 is carried into the substrate bonding apparatus 100. In addition, activation of the substrate 210 may be performed such that the substrate 210 and the bare silicon 250 are temporarily carried out of the substrate bonding apparatus 100 and activated outside, and then carried into the substrate bonding apparatus 100 again. Good.

  After execution of step S116, the control unit 150 aligns the substrate 210 and the substrate 230 with each other (step S117). The control unit 150 first corresponds to each other of the substrates 210 and 230 based on the relative positions of the microscopes 324 and 334 detected first and the positions of the alignment marks 218 and 238 of the substrate 210 and the substrate 230 detected in step S114. The lower stage 332 is moved so that the displacement amount of the structure is at least equal to or less than the above-described threshold value at the completion of bonding.

  12 and 13 are schematic plan views showing the state of the substrate 210 to which the bare silicon 250 is bonded and the substrate 230 in the bonding process. FIG. 12 shows the state of the substrate 210 and the substrate 230 to which the bare silicon 250 is bonded in the state of step S117. As shown in FIG. 12, the substrates 210 and 230 held by the upper stage 322 and the lower stage 332 via the substrate holders 220 and 240 or the bare silicon 250 face each other in an aligned state. As illustrated, the flat substrate 230 is attracted to the substrate holder 220 having a curved holding surface 221 and deformed so as to follow the curved surface, so the distance between the opposing substrate 210 and the substrate 230 is The vicinity of the center of the substrate 210 and the substrate 230 is smaller than the peripheral portion.

  Subsequent to the state shown in FIG. 12, as shown in FIG. 13, the control unit 150 operates the elevation driving unit 338 to raise the lower stage 332 to bring the substrate 210 and the substrate 230 closer to each other. Then, in a state in which the distortion generated in the substrate 210 is maintained by holding by the substrate holder 240, the projecting portion of the substrate 230 deformed in a convex shape is brought into contact with the substrate 210 by following the curved holding surface 221 of the substrate holder 220. After the contact region is formed, the substrate 230 and the substrate 210 are bonded while causing the substrate 230 to be distorted by expanding the contact region. More specifically, first, the substrate 230 and the substrate 210 are brought close to each other, and the substrate 210 and a part of the substrate 230 are brought into contact with each other to form a junction region at the contact point which has already been activated. Furthermore, by releasing the holding of the substrate 230 by the substrate holder 220, the substrate 210 and the substrate 230 are directly bonded while causing distortion in the substrate 230 (step S118).

  Here, reference is again made to FIGS. 11 and 12 which show a state in which the substrate 210 and a part of the bare silicon 250 are in contact with each other and a state in which they are joined to each other. Although the substrate 210 and the bare silicon 250 are shown with substantially the same outside dimensions in the state of FIG. 11, the outside dimensions of the substrate 210 are larger than the outside dimensions of the bare silicon 250 in the state of FIG. This is because the substrate 210 is distorted in the process of bonding the substrate 210 and the bare silicon 250, and the substrate 210 is stretched in the radial direction. On the other hand, referring to FIG. 13 which shows a state in which the substrate 210 and a part of the substrate 230 are in contact with each other, unlike the state of FIG. 11, the substrate 210 and the substrate 230 are not shown with substantially the same outside dimensions. This is because although the substrate 210 is already stretched in the radial direction in the bonding process with the bare silicon 250 as described above, the bonding wave has not yet occurred between the substrate 230 and the substrate 210, and the substrate 230 is in the radial direction. It is because it is not stretched. Conversely, the substrate 230 is distorted in the process of bonding with the substrate 210 and is stretched in the radial direction. In the present embodiment, the positional deviation between the substrates 210 and 230 due to the distortion generated in the bonding process is mainly corrected by the above-described bonding method.

  Here, with respect to distortion generated in the substrates 210 and 230, the type of distortion and the like will be described in detail. The distortion generated in the substrates 210 and 230 is the displacement of the structure on the substrates 210 and 230 from the design coordinates, ie, the design position. Distortions generated in the substrates 210 and 230 include plane distortion and steric distortion.

  Planar distortion is distortion generated in the direction along the bonding surface of the substrates 210 and 230, and linear distortion in which the position displaced with respect to the design position of each structure of the substrates 210 and 230 is represented by linear transformation and , Non-linear distortion other than linear distortion, which can not be represented by linear transformation.

  Linear distortion includes magnification distortion in which the amount of displacement increases at a constant rate along the radial direction from the center. The magnification distortion is a value obtained by dividing the amount of deviation from the design value at a distance X from the center of the substrates 210 and 230 by X, and the unit is ppm. Magnification distortion includes isotropic magnification distortion. The isotropic magnification distortion is distortion in which the displacement vector from the design position has the same X component and Y component, that is, the magnification in the X direction and the magnification in the Y direction are equal. Anisotropic magnification distortion, which is a distortion having different X components and Y components, ie, different magnifications in the X direction and Y direction, included in the displacement vector from the design position is included in the nonlinear distortion.

  In the present embodiment, the difference in magnification distortion based on the design position of the structure in each of the two substrates 210 and 230 is included in the amount of misalignment between the two substrates 210 and 230.

  Also, linear distortion includes orthogonal distortion. Orthogonal distortion displaces parallel to the X-axis direction from the design position by a large amount as the structure is farther from the origin in the Y-axis direction when the X-axis and Y-axis are set orthogonal to each other with the center of the substrate Distortion. The amount of displacement is equal in each of a plurality of regions crossing the Y axis in parallel with the X axis, and the absolute value of the amount of displacement increases with distance from the X axis. Further, in the orthogonal distortion, the direction of displacement on the positive side of the Y axis and the direction of displacement on the negative side of the Y axis are opposite to each other.

  The steric distortion of the substrates 210 and 230 is a displacement in a direction other than the direction along the bonding surface of the substrates 210 and 230, that is, in the direction crossing the bonding surfaces. The three-dimensional distortion includes a curvature that is produced on all or part of the substrate 210, 230 by the substrate 210, 230 being entirely or partially bent. Here, bending the substrate means that the surface of the substrate 210, 230 includes a point where the substrate 210, 230 does not exist on the plane specified by the three points on the substrate 210, 230. Do.

  In addition, the curvature is distortion in which the surface of the substrate has a curved surface, and includes, for example, the curvature of the substrates 210 and 230. In the present embodiment, warpage refers to distortion remaining on the substrates 210 and 230 in a state in which the influence of gravity is eliminated. The distortion of the substrates 210 and 230 in which the influence of gravity is applied to the warpage is referred to as warpage. Note that in the warpage of the substrates 210 and 230, global warpage in which the whole of the substrates 210 and 230 bends with a substantially uniform curvature, and local curvature in which a part of the substrates 210 and 230 changes and bends, local Warpage is included.

  Here, the magnification distortion is classified into an initial magnification distortion, an adsorption magnification distortion, and the above-mentioned bonding process magnification distortion depending on the generation cause.

  Initial magnification distortion may be caused by the stress generated in the process of forming the alignment marks 218, the circuit area 216, etc. on the substrates 210, 230, the periodic change in rigidity due to the arrangement of the scribe lines 212, the circuit areas 216 etc. Deviation from the design specifications of 210, 230 results from the stage before bonding the substrates 210, 230. Therefore, the initial magnification distortion of the substrates 210 and 230 can be known before starting the lamination of the substrates 210 and 230. For example, the control unit 150 can control information on the initial magnification distortion from the pretreatment apparatus that manufactured the substrates 210 and 230. May get it.

  The adsorption magnification distortion corresponds to a change in magnification distortion caused by bonding of the substrates 210 and 230 in which distortion such as warpage has occurred or bonding to a flat holding member. When the warped substrates 210 and 230 are adsorbed and held by the flat substrate holder 240 and the lower stage 332, the substrates 210 and 230 are deformed according to the shapes of the flat substrate holders 240 and the holding surface of the lower stage 332. Do. Here, when the substrates 210 and 230 change from a state having warpage to a state conforming to the shapes of the holding surfaces of the substrate holder 240 and the lower stage 332, the amount of distortion of the substrates 210 and 230 changes compared to before holding. .

  As a result, the amount of distortion relative to the design specifications of the circuit area 216 on the surface of the substrate 210, 230 changes as compared to before holding. The change in the amount of strain of the substrates 210 and 230 is caused by the structure of the structure such as the circuit region 216 formed on the substrates 210 and 230, the process for forming the structures, and the magnitude of the warp of the substrates 210 and 230 before holding It varies according to When the distortion such as warpage has occurred in the substrates 210 and 230, the magnitude of the distortion of the adsorption magnification is determined by examining in advance the correlation between the distortion and the distortion of the adsorption magnification. It can be calculated from the state of distortion including shape and the like.

  Bonding process magnification strain is a change in magnification strain newly generated due to the strain generated on the substrates 210 and 230 in the process of bonding. Here, with reference to FIGS. 14 to 16, the substrate 230 which is not directly bonded to another member such as the bare silicon 250 in advance is the fixed side, and the substrate 230 released from the holding by the holding member such as the substrate holder 220. In the case of bonding the substrate 210 to the substrate 210, the bonding process magnification distortion generated in the substrate 230 will be described. FIGS. 14, 15 and 16 are partially enlarged views showing the bonding process of the substrates 210 and 230 on the stationary side substrate holder 240. FIG. 14, 15 and 16, the contact regions of the substrates 210 and 230 in the process of being joined at the joint 300 with the substrates 210 and 230 contacting each other and the substrates 210 and 230 not contacting each other An area Q in the vicinity of the boundary K with the non-contact area separated from and to be joined from now on is shown enlarged.

  As shown in FIG. 14, in the process in which the contact areas of the substrates 210 and 230 partially in contact with each other expand in area from the center to the outer periphery, the boundary K is from the center side to the outer periphery of the substrates 210 and 230 Move towards In the vicinity of the boundary K, the substrate 230 released from the holding by the substrate holder 220 expels the air present between the substrate 210 and the substrate 210, for example, due to the atmosphere present between the substrate and the substrate 210. Elongation occurs due to air resistance at the same time. More specifically, at the boundary K, the substrate 230 extends on the lower surface side of the substrate 230 with respect to the central surface in the thickness direction of the substrate 230, and the substrate 230 shrinks on the upper surface side.

  Thereby, as shown by a dotted line in the figure, at the outer end of the region joined to substrate 210 in substrate 230, magnification distortion with respect to the design specification of circuit region 216 on the surface of substrate 230 is enlarged with respect to substrate 210. Distort as you did. For this reason, the substrate 230 is stretched between the lower substrate 210 held by the substrate holder 240 and the upper substrate 230 released from the holding by the substrate holder 220 so as to appear as a shift of a dotted line in the figure. Misalignment occurs due to differences in quantity or magnification distortion.

  Furthermore, as shown in FIG. 15, when the substrates 210 and 230 are brought into contact with each other and bonded in the above state, the magnified magnification distortion of the substrate 230 is fixed. Furthermore, as shown in FIG. 16, the amount of extension of the substrate 230 fixed by bonding is accumulated as the boundary K moves to the outer periphery of the substrates 210 and 230.

  The amount of bonding process magnification distortion as described above can be calculated based on physical quantities such as the rigidity of the substrates 210 and 230 to be bonded and the viscosity of the atmosphere sandwiched between the substrates 210 and 230. In addition, the amount of displacement produced by bonding substrates manufactured in the same lot as the substrates 210 and 230 to be bonded is measured in advance and recorded, and the recorded measurement value is obtained at the bonding of the substrates 210 and 230 in the lot. The control unit 150 may acquire the information on the process magnification distortion. In the present embodiment, the bonding process includes a process from the contact of the substrate 210 and the substrate 230 with each other to the end of the expansion of the contact region.

  FIG. 17 is a schematic view showing the positional deviation of the laminated substrate 290 due to the magnification distortion caused by the bonding method described using FIG. 14 to FIG. Arrows in the figure are vectors indicating the positional deviation of the release side substrate 230 with reference to the stationary side substrate 210, and the direction indicates the direction of the positional deviation, and the length indicates the size of the positional deviation. Represents The deviation shown in the drawing has a gradually increasing deviation amount in the plane direction from the center point of the laminated substrate 290. The illustrated magnification distortion includes initial magnification distortion and adsorption magnification distortion generated before bonding the substrates 210 and 230, and bonding process distortion generated in the process of bonding the substrates 210 and 230.

  When the substrates 210 and 230 are bonded by the bonding method described with reference to FIGS. 14 to 16, holding of the substrate 230 by the substrate holder 220 is released while holding of the substrate 210 by the substrate holder 240 is maintained. For this reason, when the substrates 210 and 230 are joined, the held substrate 210 is fixed in shape, whereas the substrate 230 released from holding is joined with distortion. Therefore, although it is not necessary to consider the bonding process magnification distortion for the substrate 210 which is bonded while being fixed, it is desirable to consider the bonding process magnification distortion for the substrate 230 whose holding is released.

  When the substrate 210 on the stationary side is held in a distorted state due to the shape of the substrate holder 240 or the like, both of the bonding process magnification distortion and the adsorption magnification distortion are taken into consideration for the substrate 230 whose holding is released. Desirably, it is preferable to also consider distortion such as adsorption magnification distortion caused by the substrate 230 following the shape of the distorted substrate 210.

  Thus, in the bonding method described with reference to FIGS. 14 to 16, the difference in final magnification distortion after bonding of the substrates 210 and 230 is the difference in initial magnification distortion that the substrates 210 and 230 originally have. The difference in flattening magnification distortion that occurs when the substrates 210 and 230 are held by the substrate holder 220 and 240, and the bonding process magnification distortion of the substrate 230 released from holding in the process of bonding overlap Be done.

  As described above, the positional deviation caused in the laminated substrate 290 formed by laminating the substrates 210 and 230 by the method described with reference to FIGS. 14 to 16 is a difference in initial magnification distortion, a difference in adsorption magnification distortion, and It is related to the magnitude of the difference in the welding process magnification distortion. Moreover, the magnification distortion produced in the substrates 210 and 230 is associated with the distortion of the substrate such as warpage.

  Furthermore, the difference in the initial magnification strain, the difference in the adsorption magnification strain, and the difference in the bonding process magnification strain can be estimated by measurement before calculation, calculation, etc. as described above.

  Next, among the non-linear distortions included in the plane distortion generated in the substrates 210 and 230, the anisotropy caused by the crystal orientation of the substrates 210 and 230, that is, the distortion caused by the crystal anisotropy will be described.

  FIG. 18 is a schematic diagram showing the relationship between the crystal orientation and the Young's modulus in the silicon single crystal substrate 208. As shown in FIG. As shown in FIG. 18, in the silicon single crystal substrate 208 having the (100) plane as the surface, the Young's modulus in the 0 ° direction and 90 ° direction in the XY coordinates with the direction of the notch 214 with respect to the center as 0 °. Is as high as 169 GPa, and in the 45 ° direction, the Young's modulus is as low as 130 GPa. Therefore, in the substrates 210 and 230 manufactured using the silicon single crystal substrate 208, an uneven distribution of bending stiffness occurs in the circumferential direction of the substrates 210 and 230. That is, the bending rigidity of the substrates 210 and 230 differs depending on the traveling direction when the bonding wave travels from the center of the substrates 210 and 230 toward the peripheral portion. The bending stiffness indicates the ease of deformation with respect to the bending force of the substrates 210 and 230, and may be a modulus of elasticity.

  FIG. 19 is a schematic diagram showing the relationship between the crystal orientation and the Young's modulus in the silicon single crystal substrate 209. As shown in FIG. As shown in FIG. 19, in the silicon single crystal substrate 209 having the (110) plane as the surface, the Young's modulus in the 45 ° direction is 188 GPa in the XY coordinates with 0 ° as the direction of the notch 214 with respect to the center. The high, Young's modulus in the 0 ° direction is followed by 169 GPa. Furthermore, the Young's modulus in the 90 ° direction is the lowest 130 GPa. Therefore, in the substrates 210 and 230 manufactured using the silicon single crystal substrate 209, an uneven and complicated distribution of bending stiffness occurs in the circumferential direction of the substrates 210 and 230.

  As described above, in the substrates 210 and 230 using any of the silicon single crystal substrates 208 and 209 having different crystal anisotropy, an uneven distribution of bending stiffness occurs in the circumferential direction. Between regions having different bending stiffnesses, the magnitudes of distortions generated in the joining process described with reference to FIGS. 14 to 16 differ depending on the magnitudes of the bending stiffnesses. Specifically, the magnitude of distortion in the low rigidity region is smaller than that in the high rigidity region. Therefore, in the laminated substrate 290 manufactured by laminating the substrates 210 and 230 by the method described with reference to FIGS. 14 to 16, the misalignment of the circuit regions 216 and 236 is uneven in the circumferential direction of the laminated substrate 290. It occurs. The positional deviation between the bonding substrates due to the strain caused by the crystal anisotropy is caused by the crystal anisotropy of the substrate 230 on the release side to be bonded.

  As described above, in the method described with reference to FIGS. 14 to 16, at least the strain caused by the bonding process due to the atmosphere interposed between the substrate 210 and the substrate 230 to be bonded, and the strain due to the crystal anisotropy As a result, misalignment occurs between the substrates 210 and 230 to be bonded. In this case, even in the case where alignment in the surface direction of the substrates 210 and 230 is performed based on the alignment marks 218 and 238 in the bonding unit 300, the positional deviation between the substrates 210 and 230 can not be eliminated. There is.

  Therefore, in the present embodiment, positional deviations between the substrate 210 and the substrate 230 to be joined due to the distortion in the bonding process and the non-linear distortion caused by the crystal anisotropy are the same as in the substrate 210 and the substrate 230. It corrects by dummy joining using other members. In addition, it is not limited to positional displacement caused by bonding process magnification distortion and nonlinear distortion caused by crystal anisotropy, and other distortion components, for example, positional displacement caused by initial magnification and adsorption distortion are also corrected together The bonding conditions may be set as follows.

  Specifically, referring to the flowchart of FIG. 3, as shown in FIGS. 5 to 11, first, before directly bonding the substrate 210 and the substrate 230, in step S101, the substrate 210 and the substrate 230 are Information on the strain generated in the substrate 230 when directly bonded is acquired, and in step S102, based on the information, a bonding condition for bonding the substrate 210 and the bare silicon 250, which is an example of another member as a dummy, is determined. . Then, according to the determined bonding conditions, distortion is generated in the substrate 210 by directly bonding the bare silicon 250 on the fixed side and the substrate 210 on the release side in step S110. Next, as shown in FIG. 12 to FIG. 13, in step S118, the substrate 230 on the fixed side and the substrate 230 on the release side are directly bonded while maintaining the distortion generated in the substrate 210, thereby the substrate 230 Cause distortion. As a result, the amount of displacement generated between the bonded substrate 210 and the substrate 230 is made equal to or less than a predetermined threshold.

  The information on the distortion generated in the substrate 230 includes the information on the global warpage in which the entire substrate 230 bends with a substantially uniform curvature, and the local curvature change in a part of the substrate 230, that is, the local curvature And information about the warp.

  Information about global warpage includes the overall curvature of the substrate 230, such as the characteristics of the overall curvature of the substrate 230, the direction of warpage, the magnitude of deflection, the direction of deflection, etc. Information related to the cause of the overall curvature of the substrate 230, such as the crystal anisotropy of the substrate 230, the manufacturing process, the type of the substrate 230, and the configuration of the structure formed on the substrate 230. Information is included.

  The information on the local warpage includes the size of the local warpage of the substrate 230, the direction of warpage, the warpage portion, the warpage amplitude, the warpage amplitude, the warpage direction, the warpage amplitude, the warpage area, Information obtained by measuring the local curvature of the substrate 230, such as the characteristics of the local curvature such as internal stress, stress distribution, etc., the crystal anisotropy of the substrate 230, the manufacturing process, the type of the substrate 230, The information on the cause of the local bending of the substrate 230, such as the configuration of the structure formed on the substrate 230, is included. The amplitude is the width between the apex of the portion curved to one side of the substrate and the apex of the portion curved to the other side when the substrate is deformed in a wavelike manner.

  The control unit 150 may obtain information on distortion generated in the substrate 230 from a pretreatment apparatus such as an exposure apparatus or a film forming apparatus used in a process performed before the substrate bonding apparatus 100. In addition, in the substrate bonding apparatus 100, for example, it may be obtained from the pre-aligner 500 used in the process performed before the bonding unit 300.

  The bonding conditions for bonding the substrate 210 and the bare silicon 250 include the activation degree of the bonding surface of each of the substrate 210 and the bare silicon 250, the posture, the deformation degree, and the distance between the two when bonding. Environmental conditions within device 100, and more preferably, surrounding substrate 210 and bare silicon 250, are included. Environmental conditions include temperature, pressure, humidity, and type of atmosphere. Further, the same conditions are included in the bonding conditions for bonding the substrate 210 and the substrate 230. These bonding conditions are also included in the information on the strain generated on the substrate 230 in the bonding process, in particular, the information causing the strain.

  The posture of the substrate or the like when bonding is, for example, the direction of the substrate such that the circuit formation surface is directed vertically downward when bonding. The degree of deformation of a substrate or the like when bonding is held by, for example, a substrate holder having a curved holding surface, and in addition to the curvature of a substrate curved according to the curved surface, a plurality of mutually separated and independent suctions The substrate holding surface of the substrate holding stage is deformed by the degree of curvature of the substrate which is partially curved by its own weight and the actuator incorporated in the substrate holding stage by being partially attracted and released by the substrate holder having a region And the degree of curvature of the substrate curved according to the deformed surface. The spacing between the substrates, etc. when bonding includes the spacing between other non-contacting areas, for example, with a portion of the substrates being bonded in contact.

  In the above step S102, when the correlation between the information on distortion and the joining condition can be grasped in advance, for example, the correlation is stored as a table in the storage unit of the control unit 150, and the joining condition is directly decide. If the correlation between the magnitude, direction, type, etc. of the strain and the bonding conditions is known in advance, the magnitude, direction, type, etc. of the strain generated in the substrate are estimated from the information on the strain, and based on them Determine the bonding conditions. If the distortion indicated by the information related to the distortion of the substrate 210 is the same as the distortion indicated by the information related to the distortion of the substrate 230, the bonding conditions for bonding the substrate 210 and the bare silicon 250 are when bonding the substrate 210 and the substrate 230 Do the same. In the case where distortion information indicated by distortion information is different, that is, when distortion modes are different, different junction conditions are set in order to equalize distortion modes.

  Examples of the correlation between bonding conditions and strain include the following. If the type of gas in the atmosphere is high in viscosity by the gas inflow device, the magnification increases. This is considered to be because a large force is required to push out the gas between the substrates at the time of bonding, and the deformation of the upper substrate becomes large. When the atmospheric pressure of the atmosphere is increased by the atmospheric pressure regulator, the magnification increases. The reason is the same as when the viscosity is high. When the humidity of the atmosphere is increased by the dehumidifying / humidifying device, the magnification increases. It is considered that this is because the viscosity of the atmosphere increases when the humidity is high. As the degree of activity or bonding strength is increased by the activation device, the magnification increases. It is considered that this is because the bonding wave speed is increased when the bonding strength is large, and the deformation amount of the upper substrate is increased. Therefore, it can be said that the gas inflow device, the air pressure regulator, the dehumidifying / humidifying device, and the activation device are correction devices that correct distortion when bonding the substrate 210 and the substrate 230.

  FIG. 20 is a partially enlarged view showing a bonding process between the substrate 210 bonded to the bare silicon 250 and the substrate 230 on the stationary side substrate holder 240 according to the present embodiment. FIG. 20 shows a state in which the bonding region between the substrate 210 and the substrate 230 is expanded to the periphery of the substrate from the state shown in FIG. A boundary K between a contact area in which the substrates 210 and 230 are in contact with each other and a non-contact area in which the substrates 210 and 230 are apart from each other without being in contact with each other is being moved to the periphery of the substrate. Further, in the figure, dotted lines shown in the cross section of each of the substrates 210 and 230 are virtual lines drawn in the thickness direction of the substrate from the scribe lines 212 and 232 formed on the respective surfaces. The dotted lines shown in the cross section are imaginary lines corresponding to the imaginary lines of the substrates 210 and 230 when no distortion occurs.

  As described above, the substrate 210, the substrate 230 and the bare silicon 250 have substantially the same external dimensions in the unstrained state. As shown in FIG. 20, the imaginary lines of the substrate 210 corresponding to the imaginary lines of the bare silicon 250 are relatively offset radially outward. This is because at least a bonding process magnification strain and a strain due to crystal anisotropy occur in the substrate 210 with respect to the bare silicon 250, and the substrate 210 is stretched in the radial direction. In addition, at least the distortion during bonding process and distortion due to crystal anisotropy occur in the substrate 230 relative to the substrate 210, and the substrate 230 is also stretched in the radial direction.

  Here, the strain corresponding to the strain generated in the substrate 230 in the bonding in FIG. 20, ie, step S118, for example, the same strain, is previously generated in the substrate 210 in the bonding of the substrate 210 and the bare silicon 250 in step S110. ing. Therefore, as shown in FIG. 20, the lines of the substrate 230 corresponding to the virtual lines of the substrate 210 are relatively substantially at the same position. As a result, in the contact area where the substrates 210 and 230 contact each other, misalignment between the plurality of circuit regions 216 formed on the substrate 210 and the plurality of circuit regions 236 formed on the substrate 230 The amount is less than or equal to a predetermined threshold.

  As described above, according to the present embodiment, the bonding condition for bonding the substrate 210 and the bare silicon 250 is adjusted and determined based on the information on the strain generated in the substrate 230. The bonding conditions are adjusted such that the amount of positional deviation between the substrates 210 and 230 due to the difference in amount of strain between the substrate 210 and the substrate 230 is equal to or less than a threshold. Specifically, when the substrate 230 is bonded to the substrate 210 by causing the type, magnitude, direction, distribution, and location of the strain generated in the substrate 210 to correspond to the strain generated in the substrate 230, A strain similar to the estimated strain is generated in advance on the substrate 210. As a result, the final difference in distortion between the substrate 210 and the substrate 230 can be reduced, and the occurrence of positional deviation due to this difference can be suppressed. The distortion generated in the substrate 210 in step S110 does not have to be the same as the distortion generated in the substrate 230 in step S118, and may be distortion within a predetermined range.

  As shown in FIG. 20, in the so-called back-to-face state, the substrate 210 and the substrate 230 joined by the above joining method do not face each other with a plurality of circuit regions 216 and 236 formed on the respective surfaces. is there. Therefore, an example of a method of bonding the substrate 210 and the substrate 230 in a so-called face-to-face state in which they face each other will be described with reference to FIGS. 21 to 25.

  FIG. 21 is a flow chart showing another procedure for bonding the substrate 210 and the bare silicon 250. In the embodiment in FIGS. 21 to 25 and the embodiment described with reference to FIGS. 1 to 20, the joint 300 includes four support arms 323 provided on the top plate 316 around the upper stage 322. Further, since the present embodiment and the point that the vertical direction groove through which the support arm 323 can be inserted is formed on the side surface of the lower stage 332, the overlapping description will be omitted.

  The four support arms 323 are arranged at approximately equal intervals, for example, 90 degrees, around the upper stage 322. Each support arm 323 has a support portion 325 that abuts on the outer peripheral portion of the lower surface of the substrate 210 or the like. The movement of the four support arms 323 is restricted so that the vertical positions of the support portions 325 always coincide with each other. Each support arm 323 is movable in the vertical direction, and also movable in the horizontal direction so as to approach each other. The control unit 150 controls vertical and horizontal movement of the four support arms 323, and supports the periphery of the substrate 210 from the lower side in the vertical direction at equal intervals of, for example, 90 degrees by the four support arms 323. .

  Here, first, the control unit 150 acquires information on distortion estimated to be generated on the substrate 230 when the substrate 210 and the substrate 230 are joined (step S201), and based on the acquired information, the substrate 210 and the bare The bonding conditions with silicon 250 are determined (step S202). Here, the control unit 150 determines that the substrate 210 is to be released and the bare silicon 250 is to be fixed according to the determined bonding conditions. Next, based on the output from the control unit 150, the transfer unit 140 carries the substrate 210 to the bonding unit 300 with the surface on which the plurality of circuit areas 216 are formed up, and the lower part of the upper stage 322 (Step S203). FIG. 22 referred to appropriately in the following description is a schematic cross-sectional view showing the state of the substrate 210 in the bonding process, and FIGS. 23 to 24 are schematic diagrams showing the state of the substrate 210 and the bare silicon 250 in the bonding process. Cross-sectional view.

  As shown in FIG. 22, each support arm 323 is lowered below the lower surface of the substrate 210 on the transport unit 140 disposed below the upper stage 322 based on the output from the control unit 150 to support By moving the portion 325 to the lower side of the substrate 210 and raising it, the support portion 325 is located in a portion where the plurality of circuit regions 216 in the outer peripheral portion of the lower surface of the substrate 210 fixed on the transport portion 140 are not formed. Abut on (step S204). In this state, the support portions 325 of the four support arms 323 are in contact with the outer peripheral portion of the lower surface of the substrate 210 at equal intervals.

  After execution of step S204, the control unit 150 releases the fixing of the substrate 210 by the transport unit 140 (step S205), raises the support arm 323, and moves the substrate 210 above the lower stage 332 (step S206). ).

  After execution of step S206, the transport unit 140 sequentially carries in the substrate holder 240 for fixed side and the bare silicon 250 to the pre-aligner 500 based on the output from the control unit 150 (step S207). Then, in the pre-aligner 500, the bare silicon 250 is held by the substrate holder 240 (step S208).

  Subsequently to the state illustrated in FIG. 22, the transport unit 140 subsequently carries the substrate holder 240 holding the bare silicon 250 into the bonding unit 300 based on the output from the control unit 150 and fixes it to the lower stage 332. (Step S209). During this time, the substrate 210 stands by above the lower stage 332 while being supported by the support arm 323. The control unit 150 operates the X-direction driving unit 331 and the Y-direction driving unit 333 to cause the microscopes 324 and 334 to detect the alignment marks 218 provided on each of the substrate 210 and the bare silicon 250 (step S210).

  Next, the relative positions of the substrate 210 and the bare silicon 250 are calculated by detecting the positions of the alignment mark 218 of the substrate 210 and the bare silicon 250 with the microscopes 324 and 334 whose relative positions are known (step S211). Then, the control unit 150 records the relative position between the substrate 210 and the bare silicon 250, and chemically activates each bonding surface of the substrate 210 and the bare silicon 250 (step S212).

  After execution of step S212, the control unit 150 aligns the substrate 210 and the bare silicon 250 with each other (step S213). FIG. 23 shows a state in which the substrate 210 supported by the support arm 323 faces the bare silicon 250 fixed on the lower stage 332 via the substrate holder 240 in the state of step S213. At this time, as shown in FIG. 23, since the outer peripheral portion of the substrate 210 is supported by the four support arms 323, the center is curved downward by its own weight. Thus, in the state shown in FIG. 23, the distance between the opposing substrate 210 and the bare silicon 250 is smaller in the vicinity of the center of the substrate 210 and the bare silicon 250 than in the peripheral portion.

  The control unit 150 lowers the support arm 323 supporting the substrate 210 to make the substrate 210 and the bare silicon 250 approach each other. Then, as shown in FIG. 24, the substrate 210 and a part of the bare silicon 250 come in contact with each other to form a bonding region at the contact point which has already been activated. Furthermore, the substrate 210 and the bare silicon 250 are directly bonded by releasing the instruction of the substrate 210 by the support arm 323 (step S214).

  FIG. 25 is a portion showing a bonding process between the substrate 210 bonded to the bare silicon 250 and the substrate 230 on the stationary side substrate holder 240 when the bonding procedure shown in FIGS. 21 to 24 is used. It is an enlarged view. Also according to the bonding procedure of the present embodiment, the substrate 210 is formed on the substrate 210 in advance by causing the substrate 210 to generate distortion corresponding to the type, size, direction, distribution and occurrence position of the distortion generated on the substrate 230. The amount of displacement occurring between the plurality of circuit regions 216 and the plurality of circuit regions 236 formed on the substrate 230 is made equal to or less than a predetermined threshold value. As described above, also according to the present embodiment, it is possible to reduce the final difference in distortion between the substrate 210 and the substrate 230, and to suppress the occurrence of positional deviation due to the difference. In the following description of the embodiment, it is assumed that the bonded substrates 210 and 230 are bonded by the bonding procedure of the embodiment shown in FIGS. 21 to 25, that is, in a face-to-face state. .

  FIG. 26 is a flow chart showing a procedure for main bonding and thinning the substrate 210 and the substrate 230. After the state shown in FIG. 25, when the progress of the bonding wave in the bonding surface of the substrates 210 and 230 is completed, the bare silicon 250 is peeled off from the substrate 210 together with the substrate holder 240 after a predetermined time (step S301). The stacked substrate 290 formed of the bonded substrates 210 and 230 is carried out of the bonding unit 300 by the transport unit 140, and is further carried out of the substrate bonding apparatus 100 (step S302). Then, the laminated substrate 290 is carried into the heating device by another conveyance means, and is heated to perform main bonding (step S303). After the main bonding is completed, the laminated substrate 290 which has been main-joined is carried out of the heating device by another transport means (step S304), carried into the thinning device, and the substrate 230 of the laminated substrate 290 is thinned (step S305). After the thinning is completed, the thinned laminated substrate 290 is carried out of the thinning apparatus by another transport means, and carried into the substrate bonding apparatus 100 again (step S306). In step S305, the substrate 210 of the laminated substrate 290 may be thinned.

  FIG. 27 is a flow chart showing a procedure for bonding the laminated substrate 290 consisting of the substrate 210 and the substrate 230 and the substrate 260 after performing step S306 of FIG. First, the control unit 150 acquires information on distortion estimated to occur in the substrate 260 when the laminated substrate 290 and the substrate 260 are joined (step S401), and based on the acquired information, the laminated substrate 290 and the bare The bonding condition with silicon 250 is determined (step S402). Here, the control unit 150 determines that the stacked substrate 290 is on the release side and the bare silicon 250 is on the fixing side according to the determined bonding condition.

  Next, based on the output from the control unit 150, the transport unit 140 selects one substrate holder 220 from among the plurality of release side substrate holders 220 having different curvatures of the holding surface 221, and selects the selected substrate holder 220 and the laminated substrate 290 are sequentially carried into the pre-aligner 500 (step S403). In the pre-aligner 500, the laminated substrate 290 is held by the substrate holder 220 such that the thinned substrate 230 of the laminated substrate 290 faces the substrate holder 220 (step S404). As for the bare silicon 250 on the stationary side, the transport unit 140 sequentially arranges the substrate holder 240 for the stationary side and the bare silicon 250 on the stationary side based on the output from the control unit 150 in the same manner as the laminated substrate 290. (Step S403), and the bare silicon 250 is held by the substrate holder 240 in the pre-aligner 500 (step S404).

  Next, based on the output from the control unit 150, the transfer unit 140 sequentially carries in the substrate holders 220 and 240 holding the laminated substrate 290 and the bare silicon 250 separately to the bonding unit 300 and fixes them to each stage. (Step S405). The control unit 150 operates the X-direction driving unit 331 and the Y-direction driving unit 333 to cause the microscopes 324 and 334 to detect the alignment marks 218 and 238 provided on each of the laminated substrate 290 and the bare silicon 250 (step S406). ).

  Next, the relative positions of the laminated substrate 290 and the bare silicon 250 are calculated by detecting the positions of the alignment marks 218 and 238 of the laminated substrate 290 and the bare silicon 250 with the microscopes 324 and 334 whose relative positions are known. Step S407). Since the substrates 210 and 230 of the laminated substrate 290 are in a face-to-face state, the alignment marks 218 and 238 formed on the respective circuit formation surfaces are not exposed, but in order to observe this, The corresponding area is provided with an observation hole filled with a transparent material such as glass, and the microscope 324, 334 may observe the alignment marks 218, 238 through the observation hole.

  Next, the control unit 150 records the relative position between the laminated substrate 290 and the bare silicon 250, and chemically activates the bonding surface of each of the laminated substrate 290 and the bare silicon 250 (step S408). The control unit 150 aligns the laminated substrate 290 and the bare silicon 250 with each other (step S409), operates the elevation driving unit 338 to raise the lower stage 332, and the substrate 210 of the laminated substrate 290 and the bare silicon 250. Bring them closer to each other. 28 and 29 are schematic cross-sectional views showing the state of the laminated substrate 290 and the bare silicon 250 in the bonding process. FIG. 28 shows the state of the laminated substrate 290 and the bare silicon 250 in the state of step S409. Following the state shown in FIG. 28, as shown in FIG. 29, the substrate 210 of the laminated substrate 290 and a part of the bare silicon 250 come in contact with each other to form a junction region at the contact point already activated. Ru. Further, by releasing the holding of the laminated substrate 290 by the substrate holder 220, the substrate 210 of the laminated substrate 290 and the bare silicon 250 are directly bonded (step S410).

  During the processes shown in FIGS. 28 to 29, the transport unit 140 sequentially carries in the substrate holder 220 for release side and the substrate 260 to the pre-aligner 500 based on the output from the control unit 150 (step S411). . Then, in the pre-aligner 500, the substrate 260 is held by the substrate holder 220 (step S412).

  Subsequently to the state shown in FIG. 29, the transport unit 140 carries in the substrate holder 220 holding the substrate 260 to the bonding unit 300 based on the output from the control unit 150 and fixes it to the upper stage 322 ( Step S413). During this time, the laminated substrate 290 bonded to the bare silicon 250 is in a state of being fixed to the lower stage 332 via the bare silicon 250. The control unit 150 operates the X-direction drive unit 331 and the Y-direction drive unit 333 to cause the microscopes 324 and 334 to detect the alignment marks 218 and 238 provided on the laminated substrate 290 and the substrate 260 (step S414). .

  Next, the relative positions of the laminated substrate 290 and the substrate 260 are calculated by detecting the positions of the alignment marks 218 and 238 of the laminated substrate 290 and the substrate 260 with the microscopes 324 and 334 whose relative positions are known (step S415). ). Then, the control unit 150 records the relative positions of the laminated substrate 290 and the substrate 260, and chemically activates the bonding surfaces of the substrate 230 of the laminated substrate 290 and the substrate 260 (step S416).

  After execution of step S416, the control unit 150 aligns the laminated substrate 290 and the substrate 260 with each other (step S417). FIGS. 30 and 31 are schematic cross-sectional views showing the state of the laminated substrate 290 including the substrate 210 and the substrate 230 joined to the bare silicon 250 and the substrate 260 in the bonding process. FIG. 30 shows the state of the laminated substrate 290 to which the bare silicon 250 is bonded and the substrate 260 in the state of step S417. As shown in FIG. 30, the laminated substrates 290 and the substrates 260 held by the upper stage 322 and the lower stage 332 via the substrate holders 220 and 240 or the bare silicon 250 face each other in an aligned state. . As illustrated, the distance between the opposing laminated substrate 290 and the substrate 260 is smaller near the center of the laminated substrate 290 and the substrate 260 than at the peripheral portion.

  Subsequently to the state shown in FIG. 30, as shown in FIG. 31, the control unit 150 operates the elevation driving unit 338 to raise the lower stage 332, and the substrate 230 of the laminated substrate 290 and a part of the substrate 260 are By bringing the substrates into contact with each other and releasing the holding of the substrate 260 by the substrate holder 220, the substrate 230 of the laminated substrate 290 and the substrate 260 are directly bonded (step S418).

  FIG. 32 shows a laminated substrate 290 consisting of the substrate 210 and the substrate 230 joined to the bare silicon 250, and the substrate 260 on the stationary side substrate holder 240 when the procedure shown in FIG. 26 to FIG. 31 is used. It is the elements on larger scale which show the joining process with. In the drawing, dotted lines shown in the cross section of the substrate 260 are virtual lines drawn in the substrate thickness direction from scribe lines 262 formed on the surface. According to the bonding procedure of the present embodiment, as shown in FIG. 32, the lines of the substrate 230 corresponding to the virtual lines of the substrate 210 are relatively at substantially the same position, and the virtual lines of the substrates 210 and 230 The lines of the substrate 260 corresponding to the common lines are relatively substantially at the same position. As a result, distortion corresponding to the distortion generated in the substrate 260 is generated in advance in the laminated substrate 290, whereby the plurality of circuit regions 216 and 236 formed in the substrate 210 of the laminated substrate 290 and the substrate 230, and the substrate 260. The amount of displacement occurring between the plurality of circuit regions 266 formed in the first and the second circuit regions 266 is equal to or less than a predetermined threshold value. As described above, according to the present embodiment, even in the case where the laminated substrate 290 obtained by bonding the plurality of substrates 210 and 230 and the further substrate 260 are bonded, the substrate 210 and the substrate 230 of the laminated substrate 290 and the additional substrate The final distortion difference with 260 can be reduced, and the occurrence of displacement due to this difference can be suppressed.

  In the embodiment of FIGS. 26 to 32, distortion corresponding to distortion which is presumed to occur in the substrate 260 when the laminated substrate 290 and the substrate 260 are directly bonded before the substrate 260 is directly bonded to the laminated substrate 290 is used. By directly bonding the laminated substrate 290 to the bare silicon 250, the substrate is formed on the laminated substrate 290 so that the distortion occurs in the substrate 260 while maintaining the distortion generated on the laminated substrate 290. 260 were joined directly. Here, instead of the substrate 260, the case where the substrates 270 and 280 bonded by the same bonding procedure as the stacked substrate 290 are bonded to the stacked substrate 290 formed of the substrate 210 and the substrate 230 will be described.

  FIG. 33 and FIG. 34 are schematic cross sections showing the state of the laminated substrate 290 consisting of the substrate 210 and the substrate 230 joined to the bare silicon 250 and the laminated substrate 290 consisting of the substrate 270 and the substrate 280 in the bonding process. is there.

  The laminated substrate 290 including the substrate 270 and the substrate 280 is formed by executing steps S111 to S118 after executing steps S201 to S210, and then executing steps S301 to S306. In the substrate 280 of the layered substrate 290, the surface opposite to the bonding surface with the substrate 270 is thinned by performing step S305. Further, as shown in FIG. 33, the laminated substrate 290 consisting of the substrate 270 and the substrate 280 carried into the substrate bonding apparatus 100 again after the substrate 280 has been thinned is made thinner in the laminated substrate 290 by the pre-aligner 500. It is held by the substrate holder 220 so that the substrate 270 not facing the substrate holder 220 faces. Then, the laminated substrate 290 composed of the substrate 270 and the substrate 280 held by the substrate holder 220 is carried into the bonding unit 300 and fixed to the upper stage 322.

  Subsequently to the state shown in FIG. 33, as shown in FIG. 34, it comprises a thinned substrate 230 and a substrate 270 and a substrate 280 in a laminated substrate 290 consisting of a substrate 210 and a substrate 230 bonded to bare silicon 250. The laminated substrates 290 are directly bonded to each other by bringing a part of the laminated substrate 290 with the thinned substrate 280 into contact with each other and releasing the holding of the laminated substrate 290 consisting of the substrate 270 and the substrate 280 by the substrate holder 220. Do.

  FIG. 35 shows a laminated substrate 290 comprising a substrate 210 and a substrate 230 joined to the bare silicon 250 on the stationary side substrate holder 240 when the joining procedure shown in FIG. 33 to FIG. 34 is used; FIG. 20 is a partial enlarged view showing a bonding process with a laminated substrate 290 made of 270 and a substrate 280. In the figure, the dotted lines shown in the cross section of each of the substrates 270 and 280 are virtual lines drawn in the substrate thickness direction from the scribe lines 272 and 282 formed on the respective surfaces. According to the bonding procedure of the present embodiment, as shown in FIG. 35, the lines of the substrate 230 corresponding to the virtual lines of the substrate 210 are relatively substantially at the same position, and become virtual lines of the substrate 270. The lines of the corresponding substrates 280 are relatively substantially at the same position, and the lines of the substrates 270 and 280 corresponding to the imaginary lines of the substrates 210 and 230 are relatively substantially the same. Thereby, the distortion corresponding to the distortion generated in the laminated substrate 290 made of the substrate 270 and the substrate 280 is caused in advance in the laminated substrate 290 made of the substrate 210 and the substrate 230, whereby the substrates 210 and 230 of one laminated substrate 290 are obtained. The amount of displacement occurring between the plurality of circuit regions 216 and 236 formed in the circuit board and the plurality of circuit regions 276 and 286 formed on the substrates 270 and 280 of one laminated substrate 290 is predetermined. Make it below the threshold. As described above, according to the present embodiment, even in the case where the laminated substrate 290 in which the plurality of substrates 210 and 230 are joined and the laminated substrate 290 in which the plurality of substrates 270 and 280 are joined, the two-layered substrate 290 is used. The final difference in distortion between them can be reduced, and the occurrence of displacement due to this difference can be suppressed. Further, the pair of laminated substrates 290 joined according to the joining procedure of the present embodiment is the substrate 210 of one laminated substrate 290 and the thinned substrate 230 of the substrates 230 and the substrate 270 of the other laminated substrate 290 and It is bonded to the circuit formation surface of the thinned substrate 280 of the substrate 280.

  As described above, using FIG. 1 to FIG. 35, the positional deviation caused between the substrates to be joined due to the distortion in the bonding process and the strain caused by the crystal anisotropy is bare silicon as another member other than the substrates to be joined. It has been described that the correction is made by the dummy junction used. Next, with reference to FIGS. 36 to 45, correction of this positional deviation by dummy bonding using a substrate holding stage as a member other than the substrate to be bonded will be described.

  FIG. 36 is a flow chart showing a procedure of main bonding and thinning the substrate 210 and the substrate 230 to which the bare silicon 250 is bonded. After the state shown in FIG. 25, when the progress of the bonding wave in the bonding surface of the substrates 210 and 230 is completed, the bare silicon 250 forms the laminated substrate 290 including the bonded substrates 210 and 230 after a predetermined time. In the state of being bonded to the substrate 210, the transfer unit 140 unloads the substrate from the bonding unit 300 and further unloads the substrate bonding apparatus 100 (step S501). When handling the laminated substrate 290 in the state where the bare silicon 250 is bonded in this way, the bare silicon 250 functions as a handling support substrate for the laminated substrate 290. Then, the laminated substrate 290 in a state in which the bare silicon 250 is joined is carried into the heating device by another conveyance means, and heating is performed to perform main joining (step S502). After the main bonding is completed, the laminated substrate 290 that has been main-bonded is carried out of the heating device by another transport means (step S503), carried into the thinning device, and of the substrates 210 and 230 of the laminated substrate 290, The substrate 230 to which the bare silicon 250 is not bonded is thinned (step S504). After the thinning is completed, the thinned laminated substrate 290 is carried out of the thinning apparatus by another transport means, and carried into the substrate bonding apparatus 100 again (step S505).

  FIG. 37 is a flow chart showing a procedure of bonding the laminated substrate 290 including the substrate 210 and the substrate 230 to which the bare silicon 250 is bonded and the substrate 260 after step S505 of FIG. 36 is performed. First, when the control unit 150 joins the laminated substrate 290 in a state in which the bare silicon 250 is joined to the substrate 260, the control unit 150 acquires information on distortion estimated to be generated on the substrate 260 (step S601). Based on the obtained information, a bonding condition between the laminated substrate 290 in a state in which the bare silicon 250 is bonded and any one of the upper stage 322 and the lower stage 332 as another member is determined (step S602). Here, the control unit 150 causes the upper stage 322 to hold the laminated substrate 290 in a state in which the bare silicon 250 is joined according to the determined joining condition, and releases the holding of the laminated substrate 290 by the upper stage 322. It is determined that the laminated substrate 290 is to be bonded to the lower stage 332.

  Next, based on the output from the control unit 150, the transport unit 140 selects one substrate holder 220 from among the plurality of release side substrate holders 220 having different curvatures of the holding surface 221, and selects the selected substrate holder The laminated substrate 290 to which the bare silicon 250 is bonded is sequentially loaded onto the pre-aligner 500 (step S603). In the pre-aligner 500, the laminated substrate 290 to which the bare silicon 250 is bonded is held by the substrate holder 220 such that the thinned substrate 230 of the laminated substrate 290 faces the substrate holder 220 (step S604).

  Next, based on the output from the control unit 150, the transfer unit 140 carries in the substrate holder 220 holding the laminated substrate 290 in a state in which the bare silicon 250 is bonded to the bonding unit 300 and fixes it to the upper stage 322. (Step S605). The control unit 150 operates the X-direction driving unit 331 and the Y-direction driving unit 333 to cause the microscope 334 to detect the alignment marks 218 and 238 provided on the laminated substrate 290 (step S606).

  Next, the relative position between the laminated substrate 290 and the lower stage 332 is detected by detecting the positions of the alignment marks 218 and 238 of the laminated substrate 290 in a state in which the bare silicon 250 is bonded with a microscope 324 and 334 whose relative positions are known. The position is calculated (step S607). The control unit 150 records the relative positions of the layered substrate 290 and the lower stage 332, and chemically activates the bonding surfaces of the bare silicon 250 and the lower stage 332 in a state of being bonded to the layered substrate 290 (step S608). The control unit 150 aligns the laminated substrate 290 and the bare silicon 250 with each other (step S 609), operates the elevation driving unit 338 to raise the lower stage 332, and the bare silicon 250 of the laminated substrate 290 and the lower stage 332. And bring them closer to each other. FIGS. 38 and 39 are schematic cross-sectional views showing the state of the lower substrate 332 and the laminated substrate 290 to which the bare silicon 250 is bonded in the bonding process. FIG. 38 shows the state of the layered substrate 290 and the lower stage 332 in the state of step S609. Following the state shown in FIG. 38, as shown in FIG. 39, the control unit 150 brings the bare silicon 250 and the lower stage 332 in a state of being bonded to the laminated substrate 290 in contact with each other. By releasing the holding of the laminated substrate 290 by 220, the bare silicon 250 in a state of being bonded to the laminated substrate 290 and the lower stage 332 are directly bonded (step S610).

  During the processes shown in FIGS. 38 to 39, the transport unit 140 sequentially carries in the substrate holder 220 for release side and the substrate 260 to the pre-aligner 500 based on the output from the control unit 150 (step S611). . Then, in the pre-aligner 500, the substrate 260 is held by the substrate holder 220 (step S612).

  Subsequently to the state shown in FIG. 39, the transport unit 140 subsequently carries the substrate holder 220 holding the substrate 260 into the bonding unit 300 and fixes it to the upper stage 322 based on the output from the control unit 150 ( Step S613). The control unit 150 operates the X-direction driving unit 331 and the Y-direction driving unit 333 to cause the microscopes 324 and 334 to detect the alignment marks 218 and 238 provided on each of the laminated substrate 290 and the substrate 260 (step S614). .

  Next, the relative positions of the laminated substrate 290 and the substrate 260 are calculated by detecting the positions of the alignment marks 218 and 238 of the laminated substrate 290 and the substrate 260 with the microscopes 324 and 334 whose relative positions are known (step S615) ). Then, the control unit 150 records the relative position between the laminated substrate 290 and the substrate 260, and chemically activates each bonding surface of the thinned substrate 230 and the substrate 260 of the laminated substrate 290 (step S616). .

  After execution of step S616, the control unit 150 aligns the laminated substrate 290 and the substrate 260 with each other (step S617), and deforms the lower stage 332 in an upward convex shape to join the bare silicon 250. The layered substrate 290 in the state is deformed in a convex shape (step S618).

  40 and 41 are schematic cross-sectional views showing the state of the substrate 260 and the laminated substrate 290 formed of the substrate 210 and the substrate 230 to which the bare silicon 250 is joined joined to the lower stage 332. FIG. 40 shows the state of the substrate 260 and the laminated substrate 290 consisting of the substrate 210 and the substrate 230 to which the bare silicon 250 is joined joined to the upper convex deformed lower stage 332 in the state of step S618. ing. As shown in FIG. 40, the laminated substrate 290 and the substrate 260 held by the lower stage 332 or the upper stage 322 via the bare silicon 250 or the substrate holder 220 face each other in an aligned state, The laminated substrate 290 to which the bare silicon 250 is bonded is deformed in a convex shape.

  Here, when one of the objects to be joined has significantly higher bending rigidity than the other, for example, when joining a laminated substrate to which three or more substrates are joined and one substrate, one substrate is laminated. Even if it is attempted to join a laminated substrate to another member with a dummy by the same method as bonding to a substrate, distortion does not easily occur in the laminated substrate due to high bending rigidity of the laminated substrate, and one substrate is used as a laminated substrate. It may be difficult in advance to cause the laminated substrate to have a distortion corresponding to the distortion generated in one substrate when bonding. In the present embodiment, although the pair in which the bare silicon 250, the substrate 210 and the substrate 230 are joined is joined to one substrate 260, the bending rigidity of the pair is expected to be relatively high. It is expected that this set is unlikely to cause in advance distortion corresponding to distortion estimated to occur in one substrate 260 when the one substrate 260 is joined to this set. Therefore, as described above, by performing step S 618, the lower stage 332 is deformed in the upper convex shape, and the layered substrate 290 in a state in which the bare silicon 250 is bonded is deformed in the upper convex shape. Thereby, the corresponding distortion can be generated in advance in the laminated substrate 290 in a state where the bare silicon 250 is joined.

  Following the state shown in FIG. 40, as shown in FIG. 41, the control unit 150 operates the elevation driving unit 338 to raise the lower stage 332, and the bare silicon 250 is bonded to the laminated substrate 290 in a state of bonding. By bringing the thinned substrate 230 and a part of the substrate 260 into contact with each other and releasing the holding of the substrate 260 by the substrate holder 220, the substrate 230 and the substrate 260 of the laminated substrate 290 are directly bonded (see FIG. Step S619).

  FIG. 42 shows the laminated substrate 290 of the substrate 210 and the substrate 230 to which the bare silicon 250 is joined and the substrate 260 joined to the lower stage 332 when the procedure shown in FIGS. 36 to 41 is used. It is the elements on larger scale which show a joining process.

  As shown in FIG. 42, the laminated substrate 290 to which the bare silicon 250 is bonded is bonded to the lower stage 332. Further, since the lower stage 332 is deformed in the upper convex shape, the laminated substrate 290 to which the bare silicon 250 is bonded is also deformed in the upper convex shape according to this. The surface of the substrate 230 is directed from the center to the peripheral edge on the surface which is the upper surface in the figure of the substrate 230 as compared with the central portion A of the substrate 230 in the thickness direction of the laminated substrate 290 shown by the alternate long and short dash line The shape changes so as to expand in the surface direction. Further, on the back surface of the substrate 230 which is the lower surface in the drawing, the shape changes so that the surface of the substrate 230 shrinks in the surface direction from the center toward the peripheral portion.

  By deforming the laminated substrate 290 to which the bare silicon 250 is bonded in this manner, the upper surface of the substrate 230 of the laminated substrate 290 in the drawing is enlarged as compared to the flat state of the substrate 230. Such a change in shape can cause the above-described corresponding distortion in the laminated substrate 290 to which the bare silicon 250 is bonded, so that the laminated substrate 290 to which the bare silicon 250 is bonded and the substrate 260 to be bonded. Can reduce the final difference in distortion and prevent the occurrence of displacement due to this difference.

  Bonding conditions for correcting this difference based on the difference in final magnification distortion after bonding estimated for the objects to be joined, when one of the objects to be joined has a considerably higher bending stiffness than the other An example was described. As another example of the bonding condition, a configuration is also possible in which a substrate holder capable of correcting the difference in the estimated magnification distortion among a plurality of substrate holders having different holding surface curvatures is selected as the substrate holder for stationary side. Conceivable.

  In the embodiments of FIG. 36 to FIG. 42, the distortion generated in the substrate 260 when the laminated substrate 290 and the substrate 260 are directly bonded before the substrate 260 is directly bonded to the laminated substrate 290 in the state where the bare silicon 250 is bonded. In a state in which the strain generated in the laminated substrate 290 is maintained by causing the laminated substrate 290 to be directly bonded to the lower stage 332 and further deforming the lower stage 332 in a convex shape. Then, the substrate 260 is directly bonded to the laminated substrate 290 so that the distortion occurs in the substrate 260. Here, instead of the substrate 260, the substrate 270 and the substrate 280 joined according to the same joining procedure as the laminated substrate 290 in the state where the bare silicon 250 is joined are bare with the bare silicon 255 joined to the substrate 270. The case of bonding to a laminated substrate 290 formed of the substrate 210 and the substrate 230 in a state in which the silicon 250 is bonded will be described.

  43 and 44 show a laminated substrate 290 consisting of a substrate 210 and a substrate 230 joined to a bare silicon 250 joined to the lower stage 332 and a substrate 270 joined to a bare silicon 255 in the joining process. FIG. 10 is a schematic cross-sectional view showing the state of the laminated substrate 290 formed of the substrate 280.

  After performing steps S201 to S210, the laminated substrate 290 formed of the substrate 270 and the substrate 280 to which the bare silicon 255 is bonded performs the steps S111 to S118, and then performs the steps S501 to S505. Is formed. In the substrate 280 of the layered substrate 290, the surface opposite to the bonding surface with the substrate 270 is thinned by performing step S504. In addition, as shown in FIG. 43, the laminated substrate 290 made of the substrate 270 and the substrate 280 to which the bare silicon 255 is bonded and carried again to the substrate bonding apparatus 100 after the substrate 280 is thinned is the pre-aligner 500. The bare silicon 255 in a state of being bonded to the substrate 270 is held by the substrate holder 220 so as to face the substrate holder 220. Then, the laminated substrate 290 composed of the substrate 270 and the substrate 280 bonded to the bare silicon 255 and held by the substrate holder 220 is carried into the bonding portion 300 and fixed to the upper stage 322.

  Subsequently to the state shown in FIG. 43, as shown in FIG. 44, the laminated substrate 290 in the laminated substrate 290 consisting of the substrate 210 and the substrate 230 joined to the bare silicon 250 and the bare silicon 255 are joined. A portion of the laminated substrate 290 consisting of the substrate 270 and the substrate 280 and a portion of the thinned substrate 280 are brought into contact with each other, and the substrate holder 220 further comprises the laminated substrate 290 consisting of the substrate 270 and the substrate 280 joined to the bare silicon 255. The stacked substrates 290 are directly bonded to each other by releasing the holding of

  45 shows a laminated substrate 290 including the substrate 210 and the substrate 230 to which the bare silicon 250 is joined and the bare silicon 255 joined to the lower stage 332 in the case of using the joining procedure shown in FIG. 43 to FIG. Is a partially enlarged view showing a bonding process with a laminated substrate 290 consisting of a substrate 270 and a substrate 280 to which the two are bonded.

  A laminated substrate 290 consisting of a substrate 210 and a substrate 230 to which bare silicon 250 is bonded, and a laminated substrate 290 consisting of a substrate 270 and a substrate 280 to which bare silicon 255 is bonded are formed by the same bonding procedure. It is considered that there is no difference in bending rigidity. Therefore, even if the lower stage 332 is not deformed in the upward convex shape, as shown in FIG. 45, the difference in final magnification distortion between both laminated substrates is reduced, and the occurrence of positional deviation due to this difference is suppressed. it can.

  In the plurality of embodiments described above, the substrate 210 and the substrate 230 bonded in a face-to-face state have been described as being formed in the bonding procedure using the support arm 323 shown in FIGS. Next, the case of forming the substrates 210 and 230 bonded face-to-face according to the bonding procedure without using the support arm 323 will be described with reference to FIGS.

  FIG. 46 is a flow chart showing a procedure for peeling the bonded substrate 210 and the bare silicon 250 before bonding the substrate 210 and the substrate 230. FIG. 47 is a schematic cross-sectional view showing the state of the substrate 210 and the bare silicon 250 in the bonding process, and the state of the substrate 210 and the bare silicon 250 in the state of step S110 shown in FIG. It is the same as FIG. 11 shown in FIG. FIGS. 48 to 50 appropriately referred to in the following description are schematic cross-sectional views showing the state of the substrate 210 and the bare silicon 250 in the bonding process.

  The control unit 150 completes the bonding of the bare silicon 250 and the substrate 210 on the substrate holder 240 from the state shown in FIG. 47 by executing step S110. At this time, the circuit formation surface of the substrate 210 is bonded to the bare silicon 250. Then, based on the output from the control unit 150, as shown in FIG. 48, the transfer unit 140 carries the other stationary side substrate holder 242 having a flat holding surface into the bonding unit 300, and the upper stage 322. It fixes (step S701). During this time, the substrate 210 bonded to the bare silicon 250 is fixed to the lower stage 332 via the bare silicon 250.

  Following the state shown in FIG. 48, as shown in FIG. 49, the control unit 150 operates the elevation drive unit 338 to raise the lower stage 332, and the substrate holder 242 and the substrate 210 are brought into contact with each other. The substrate holder 242 holds the substrate 210 (step S702). At this time, since the circuit formation surface of the substrate 210 is opposite to the surface held by the substrate holder 242, the circuit formation surface does not contact the substrate holder 242. Also, during this time, the bare silicon 250 is kept fixed to the lower stage 332.

  Following the state shown in FIG. 49, as shown in FIG. 50, the control unit 150 operates the elevation drive unit 338 to lower the lower stage 332, and the substrate 210 held by the substrate holder 242 and the substrate holder 240. The bare silicon 250 held on the substrate is separated from each other, and the bare silicon 250 is peeled off from the substrate 210 (step S703). Before and after this peeling, the substrate 210 is released from being fixed to the lower stage 332 via the bare silicon 250 to a state fixed by being held by the substrate holder 242. Instead, it moves from above the bare silicon 250 held by the substrate holder 240 onto the substrate holder 242. This maintains the distortion generated in the substrate 210 when the substrate 210 and the bare silicon 250 are directly bonded and bonded.

  Then, based on the output from the control unit 150, the transfer unit 140 carries the bare silicon 250 held by the substrate holder 240 out of the bonding unit 300. Further, the substrate 210 held by the substrate holder 242 is pulled up from the upper stage 322, turned upside down, and fixed to the lower stage 332 (step S704). At this time, the circuit formation surface of the substrate 210 faces the upper stage 322 side. After execution of step S704, the process proceeds to step S111 shown in FIG.

  FIG. 51 is a schematic cross-sectional view showing the state of the substrate 210 and the substrate 230 in the bonding process. Following the state shown in FIG. 50, as shown in FIG. 51, the transport unit 140 carries the substrate 230 held by the substrate holder 220 into the bonding unit 300 based on the output from the control unit 150, and It is fixed to the stage 322. At this time, the circuit formation surface of the substrate 230 faces the lower stage 332 side. Then, the control unit 150 operates the elevation driving unit 338 to raise the lower stage 332 so that the substrate 210 and the substrate 230 approach each other. Then, the substrate 210 and a part of the substrate 230 come in contact with each other, and the substrate holder 220 directly releases the holding of the substrate 230 by the substrate holder 220, thereby directly bonding the substrate 210 and the substrate 230.

  According to the bonding procedure of the embodiment described with reference to FIGS. 46 to 51, the substrates 210 and 230 bonded in the face-to-face state can be formed without using an additional configuration such as the support arm 323. Next, a procedure of bonding the substrate 260 to the laminated substrate 290 formed of the substrate 210 and the substrate 230 formed by the bonding procedure of FIGS. 46 to 51 will be described with reference to FIGS. The bare silicon 250 is already peeled off from the substrate 210 before the substrate 210 and the substrate 230 are bonded, and is not used in the procedure for bonding the substrate 260. Therefore, in the bonding procedure of FIGS. 46 to 51, unlike the bonding procedure described with reference to FIGS. 36 to 42, it is considered that there is no large difference in bending rigidity between laminated substrate 290 and substrate 260. There is no transformation of

  FIG. 52 is a flow chart showing another procedure for bonding the laminated substrate 290 consisting of the substrate 210 and the substrate 230 to the substrate 260. First, the control unit 150 acquires information on distortion estimated to occur in the substrate 260 when the laminated substrate 290 and the substrate 260 are joined (step S801), and based on the acquired information, A bonding condition with any one of the upper stage 322 and the lower stage 332 as another member is determined (step S802). Here, the control unit 150 causes the upper substrate 322 to hold the laminated substrate 290 in accordance with the determined bonding condition, and releases the holding of the laminated substrate 290 by the upper stage 322 to place the laminated substrate 290 on the lower stage 332. Decide to join.

  Next, based on the output from the control unit 150, the transport unit 140 selects one substrate holder 220 from among the plurality of release side substrate holders 220 having different curvatures of the holding surface 221, and selects the selected substrate holder 220 and the laminated substrate 290 are sequentially carried into the pre-aligner 500 (step S 803). In the pre-aligner 500, the laminated substrate 290 is held by the substrate holder 220 such that the thinned substrate 230 of the laminated substrate 290 faces the substrate holder 220 (step S804).

  Next, based on the output from the control unit 150, the transfer unit 140 carries the substrate holder 220 holding the laminated substrate 290 into the bonding unit 300 and fixes it to the upper stage 322 (step S805). The control unit 150 operates the X-direction driving unit 331 and the Y-direction driving unit 333 to cause the microscope 334 to detect the alignment marks 218 and 238 provided on the laminated substrate 290 (step S806).

  Next, the relative positions of the laminated substrate 290 and the lower stage 332 are calculated by detecting the positions of the alignment marks 218 and 238 of the laminated substrate 290 with the microscopes 324 and 334 whose relative positions are known (step S807). The control unit 150 records the relative positions of the layered substrate 290 and the lower stage 332, and chemically activates the bonding surface of each of the substrate 210 and the lower stage 332 of the layered substrate 290 (step S808). The control unit 150 aligns the laminated substrate 290 and the bare silicon 250 with each other (step S809), operates the elevation driving unit 338 to raise the lower stage 332, and the substrate 210 of the laminated substrate 290 and the lower stage 332. Bring them closer to each other. FIG. 53 is a schematic cross-sectional view showing the state of the laminated substrate 290 and the lower stage 332 in the bonding process. As shown in FIG. 53, the control unit 150 brings a part of the substrate 210 and the lower stage 332 of the laminated substrate 290 into contact with each other, and further releases the holding of the laminated substrate 290 by the substrate holder 220 to obtain a laminated substrate. The substrate 210 of 290 and the lower stage 332 are directly bonded (step S810).

  During the process shown in FIG. 53, the transport unit 140 sequentially carries in the substrate holder 220 for release side and the substrate 260 to the pre-aligner 500 based on the output from the control unit 150 (step S811). Then, in the pre-aligner 500, the substrate 260 is held by the substrate holder 220 (step S812).

  Subsequently to the state shown in FIG. 53, the transport unit 140 subsequently carries the substrate holder 220 holding the substrate 260 into the bonding unit 300 and fixes it to the upper stage 322 based on the output from the control unit 150 ( Step S813). The control unit 150 operates the X-direction driving unit 331 and the Y-direction driving unit 333 to cause the microscopes 324 and 334 to detect the alignment marks 218 and 238 provided on the laminated substrate 290 and the substrate 260, respectively (step S814). .

  Next, the relative positions of the laminated substrate 290 and the substrate 260 are calculated by detecting the positions of the alignment marks 218 and 238 of the laminated substrate 290 and the substrate 260 with the microscopes 324 and 334 whose relative positions are known (step S815) ). Then, the control unit 150 records the relative position between the laminated substrate 290 and the substrate 260, and chemically activates the bonding surface of each of the thinned substrate 230 and the substrate 260 of the laminated substrate 290 (step S816). .

  After execution of step S816, control unit 150 aligns laminated substrate 290 and substrate 260 with each other (step S817). FIG. 54 is a schematic cross-sectional view showing the state of the laminated substrate 290 including the substrate 210 and the substrate 230 and the substrate 260 joined to the lower stage 332. As shown in FIG. 54, the laminated substrate 290 and the substrate 260 held by the lower stage 332 or the upper stage 322 via the bare silicon 250 or the substrate holder 220 face each other in an aligned state.

  Following the state shown in FIG. 54, as shown in FIG. 55, the control unit 150 operates the elevation driving unit 338 to raise the lower stage 332, and the thinned substrate 230 in the laminated substrate 290, and the substrate The substrate 230 of the laminated substrate 290 and the substrate 260 are directly bonded by bringing portions of the substrate 260 into contact with each other and releasing the holding of the substrate 260 by the substrate holder 220 (step S 818).

  In the embodiment of FIGS. 52 to 55, distortion corresponding to distortion which is presumed to occur in the substrate 260 when the laminated substrate 290 and the substrate 260 are directly bonded before the substrate 260 is directly bonded to the laminated substrate 290 is used. The direct bonding of the laminated substrate 290 to the lower stage 332 causes the laminated substrate 290 to be produced, and the distortion of the laminated substrate 290 is maintained so that the distortion of the substrate 260 occurs. 260 were joined directly. In the embodiment of FIGS. 52 to 55, instead of the substrate 260, a pair of substrates joined by the same joining procedure as the laminated substrate 290 may be joined to the laminated substrate 290 consisting of the substrate 210 and the substrate 230.

  Next, the non-linear distortion included in the plane distortion generated in the substrates 210 and 230 to be bonded will be described. FIG. 56 is a schematic view showing positional deviation of the laminated substrate 290 due to non-linear distortion that occurs when the release side substrate 210 has a local curvature. The displacement due to non-linear distortion shown in FIG. 56 does not include the displacement due to magnification distortion shown in FIG.

  As shown in FIG. 56, the positional deviation due to non-linear distortion in the laminated substrate 290 largely occurs in the second quadrant where X is negative and Y is positive, and in the fourth quadrant where X is positive and Y is negative. However, there is no regular distribution of displacement amounts along the radial direction from the center of the laminated substrate 290. Referring to FIG. 56, it can be understood that the positional deviation caused by the non-linear distortion can not represent the position displaced with respect to the design position of each of the structures of the substrates 210 and 230 by linear conversion.

  Non-linear distortion is caused by interaction between various factors, the main factors being the crystal anisotropy in the silicon single crystal substrates 208 and 209 described with reference to FIGS. 18 and 19, and It is a manufacturing process of substrate 210,230. As described with reference to FIG. 2, in the manufacturing process of the substrates 210 and 230, a plurality of structures are formed on the substrates 210 and 230. For example, as a structure, a plurality of circuit regions 216 and 236, scribe lines 212 and 232, and a plurality of alignment marks 218 and 238 are formed on the substrates 210 and 230. In each of the plurality of circuit regions 216 and 236, as a structure, wires formed by photolithography and the like, protective films, etc., and the substrates 210 and 230 are electrically connected to other substrates 230 and 210, lead frames, etc. Also, connection parts such as pads and bumps, which become connection terminals when connecting to The structure and arrangement of these structures, that is, the configuration of the structures affect the in-plane rigidity distribution and in-plane stress distribution of the substrates 210 and 230, and if unevenness occurs in the rigidity distribution and in-plane stress distribution, the substrate 210 , 230, a local bending occurs.

  The configuration of these structures may be different for each substrate 210 or 230, or may be different for each type of substrate 210 or 230, such as a logic wafer, a CIS wafer, or a memory wafer. In addition, even if the manufacturing process is the same, the configuration of the structures may be different depending on the manufacturing apparatus, so the configurations of those structures may be different for each manufacturing lot of the substrates 210 and 230. . As described above, the structures of the plurality of structures formed on the substrates 210 and 230 are each of the substrates 210 and 230, each type of the substrates 210 and 230, each manufacturing lot of the substrates 210 and 230, or each of the substrates 210 and 230. It may be different for each manufacturing process. Therefore, the stiffness distribution in the plane of the substrates 210, 230 is also different. Therefore, the bending state of the substrates 210 and 230 generated in the manufacturing process and the bonding process are also different.

  When bonding a pair of substrates 210 and 230, local bending occurs on the release-side substrate 230, local bending does not occur on a portion of the substrate 230 where local bending occurs. As compared with the location, the distance between the other substrate 210 and the substrate 210 becomes larger when it is joined. Therefore, the progress of the bonding wave is delayed at the portion where the local curvature is generated compared to the portion where the local curvature is not generated, and the wrinkle is generated at the portion where the local curvature is generated at the release side substrate 230 This causes non-linear distortion in the bonded laminated substrate 290 due to this. That is, there is a correlation between the local curvature and the non-linear distortion, and the portion where the local curvature of the release side substrate 230 is large before bonding is the non-linear distortion occurring in the laminated substrate 290 after bonding Will also grow. However, this causal relationship applies when there is no distortion other than the distortion due to the local curvature. On the other hand, even if the substrates 210 and 230 to be bonded have local curvature, non-linear distortion that may occur due to local curvature may be canceled by distortion due to, for example, crystal anisotropy. .

  In the case where local bending occurs on the bonding and fixing side substrate 210 of the pair of substrates 210 and 230 from before bonding, the entire surface on one side is adsorbed and fixed by the substrate holder 240 or the like. Since it is maintained, non-linear distortion due to its own local curvature does not occur, and non-linear displacement due to local curvature of the stationary side substrate 210 does not occur between the substrates 210 and 230 after bonding. . However, although there may be an adsorption magnification distortion or the like on the substrate 210 on the fixed side, such distortion is smaller than the distortion generated on the substrate 230 on the release side, and the influence thereof is almost negligible. It is also good. On the other hand, when the bending on the release side substrate 230 occurs locally before bonding, a positional deviation due to non-linear distortion occurs between the bonded pair of substrates 210 and 230 due to the above-mentioned reason.

  In order to suppress such positional deviation due to non-linear distortion, the control unit 150 acquires information on at least the local curvature of the release side substrate 230 before bonding the substrates 210 and 230, and based on the acquired information The bonding conditions of the substrate 210 and the bare silicon 250 are determined.

  In this embodiment, for example, in the pretreatment apparatus, the local curvature of the substrates 210 and 230 is actually measured. FIG. 57 is a diagram for explaining how to measure deflection and calculate warpage. In the method in FIG. 57, first, the deflection of the substrates 210 and 230 as the target substrate is measured. Specifically, while the center of the surface direction of the back surface of the substrate 210 230 is supported and rotated around the center under gravity, the front surface or the back surface of the substrate 210 230 is observed with a non-contact distance meter such as a microscope The position of the front or back is measured based on the distribution of distance information obtained from the automatic focusing function of the microscope optical system.

  As a result, the amount of deflection including the magnitude and direction of deflection of the substrates 210 and 230 under gravity can be measured. The deflection amount of the substrates 210 and 230 can be obtained from the displacement of the position of the front surface or the back surface of the substrates 210 and 230 in the thickness direction with reference to the supported center. Next, the control unit 150 acquires information on the amount of deflection of the substrates 210 and 230, and decomposes the information into linear components and non-linear components along the radial direction from the substrate center. In FIG. 57, the linear component of the amount of deflection of the substrates 210, 230 is shown parabolically as average deflection (A), and the non-linear component is shown wavyly as the amplitude of deflection (B) at the outer periphery There is.

  Next, the deflection of bare silicon as a reference substrate is measured. Bare silicon can be considered as a substrate 210, 230 in which a structure is not formed, and a substrate 210, 230 in which no warpage occurs. The amount of deflection of bare silicon is measured under the same measurement conditions as for the substrates 210 and 230. Then, the control unit 150 acquires information on the amount of deflection of the bare silicon, which is linearly (linearly (A) in FIG. 57) and non-linearly proportional ((B in FIG. 57). ) And disassemble.

  Then, from the amplitude of the deflection at the outer periphery of the substrates 210 and 230, the amplitude of the deflection at the outer periphery of the bare silicon is subtracted. Thereby, it is possible to calculate a non-linear component of the amount of warpage of the substrates 210 and 230, which can be regarded as a measurement value under weightlessness. In FIG. 57, the non-linear component of the warpage amount of the substrates 210 and 230 is shown in a wavy line as the warpage amplitude (B) at the outer periphery, and corresponds to the above-mentioned local warpage. The reason why the amount of warpage as the amount of deformation measured under zero gravity can be calculated by this method is that the amount of deformation due to its own weight contained in the amount of deflection as the amount of deformation measured under gravity is substantially reduced by the above subtraction It is to be deducted.

  In addition, by subtracting the average deflection of bare silicon from the average deflection of the substrates 210 and 230, it is possible to calculate a linear component of the amount of warpage of the substrates 210 and 230 that can be regarded as a measurement value under weightlessness. Corresponds to the above-mentioned global warpage. In FIG. 57, the linear component of the warpage amount of the substrates 210 and 230 is parabolically shown as the mean warpage (A).

  Finally, the state of the release side substrate 230 at the time of bonding is reflected. Specifically, the center of the surface direction of the surface of the substrate 230 is determined by converting the amplitude of warpage on the outer periphery of the substrate 230 in consideration of the posture in which the surface of the substrate 230 on the release side is downward and the gravity direction. The amplitude of the warpage on the outer periphery of the substrate 230 when it is supported and measured as described above is calculated as a predicted value.

  Among the amplitudes of warpage at the outer peripheries of the substrates 210 and 230 as information on local bending of the substrate 230 on the release side and the substrate 210 on the fixed side calculated in this manner, at least on the release side. The control unit 150 determines the bonding condition between the substrate 210 and the bare silicon 250 based on the amplitude of the warpage at the outer periphery of the substrate 230.

  As described above, the local curvature of the substrates 210 and 230 varies depending on the substrates 210 and 230, the types of the substrates 210 and 230, the production lots of the substrates 210 and 230, or the production processes of the substrates 210 and 230. obtain. Therefore, the control unit 150 may set the initial bonding area of the substrate 210 in advance every time the substrates 210 and 230 are bonded, or may set in advance for each type of the substrates 210 and 230. The substrates 210 and 230 It may be preset for every manufacturing lot of, or may be preset for every manufacturing process of substrate 210,230.

  The residual stress of the substrates 210 and 230 is measured by Raman scattering or the like in a state in which the substrates 210 and 230 are forcibly flatten by being adsorbed by the substrate holder 240 or the like, and the residual stress is a local curvature of the substrates. It may be information about Also, the local curvature of the substrate 210, 230 may be measured at the pre-aligner 500.

  On the other hand, without measuring the local curvature of the substrate 210, 230, the control unit 150 analytically acquires information on the local curvature of the substrate 210, 230, and based on the acquired information, the substrate 210. The bonding conditions between the and the bare silicon 250 may be determined. In that case, information on the manufacturing process of the substrates 210 and 230, the configuration and materials of the structures such as the circuit regions 216 and 236 formed on the substrates 210 and 230, the type of the substrates 210 and 230, and the stress distribution in the substrates 210 and 230 Based on the characteristics of the local curvature such as the magnitude and direction of warpage of the substrates 210 and 230 and the shape of the substrates 210 and 230 may be estimated. In addition, information on the manufacturing process for the substrates 210 and 230 generated in the process of forming the above-mentioned structure, that is, the heat history accompanying film formation and the like, chemical processing such as etching, etc. The warpage that occurs in the substrates 210 and 230 may be estimated based on that.

  Moreover, when estimating the characteristic of the local curvature which arises in the substrate 210, 230, the surface structure of the substrate 210, 230 which may become a cause of the local curvature which arose in the substrate 210, the thin film laminated | stacked on the substrate 210 The peripheral information such as the film thickness of the film forming apparatus, the tendency of the film forming apparatus such as the CVD apparatus used for the film forming, the variation, the film forming procedure, and the conditions may be referred to together. These pieces of peripheral information may be measured again for the purpose of estimating the characteristic of the local curvature.

  Furthermore, in order to estimate the characteristics of local bending of the substrates 210 and 230 as described above, reference may be made to past data obtained by processing equivalent substrates or the like, or may be equivalent to the substrates 210 and 230 to be bonded. By experimenting the process assumed for the substrates, the relationship between the amount of distortion, which is the local curvature, and the relationship between the difference in the amount of distortion and the difference in the magnification distortion between both substrates, or between both substrates Data of a combination of distortion amounts at which the magnification distortion difference of, that is, the displacement amount is equal to or less than a threshold may be prepared in advance. Further, the amount of warpage may be analytically determined by the finite element method or the like based on the film formation structure of the substrates 210 and 230 to be joined and the film formation conditions, and data may be prepared.

  The measurement of the amount of strain on the substrates 210 and 230 may be performed outside the substrate bonding apparatus 100, or the strain of the substrates 210 and 230 inside the system including the substrate bonding apparatus 100 or the substrate bonding apparatus 100. A device for measuring the Furthermore, the measurement items may be increased by using the inner and outer measuring devices in combination.

  As described above, the local bending and non-linear distortion of the substrates 210 and 230 have been described with reference to FIGS. 56 and 57, but the information on the local bending and non-linear distortion determines the bonding conditions in step S102 of FIG. It is an example of information about distortion that is used to Furthermore, measurement values and analysis values used to estimate the local bending and non-linear strain, specifically, measurement values and analysis values such as deflection amount, warpage amount, stiffness distribution, in-plane stress distribution, etc. , Is an example of information on the distortion. In addition, information about the distortion, the configuration and arrangement of structures on the substrates 210 and 230, the surface structure, the film thickness of the thin film, the tendency of the film forming apparatus, the dispersion, and the film forming procedures and conditions that affect the distortion. An example of

  Next, in the case where the local curvature described with reference to FIGS. 56 to 57 occurs in the release side substrate 230, it is estimated that the local curvature occurs in the substrate 230 when the substrate 210 and the substrate 230 are directly bonded. An example of a method of causing a distortion corresponding to non-linear distortion to be generated on the substrate 210 by using the correction device when the substrate 210 is directly bonded to the bare silicon 250 will be described.

  The control unit 150 may determine a correction amount by a correction device to be described later based on the information regarding the distortion, and drive the correction device with a driving amount corresponding to the correction amount. In this case, the drive amount of the correction device is an example of the bonding condition, and based on the information on the measured distortion of the substrate 230 or the information on the distortion calculated by estimation and analysis, a similar distortion distribution is obtained. The correction amount is controlled by the drive amount to positively form the

  FIG. 58 is a schematic cross-sectional view of a portion of a joint 600 having a correction device. The bonding portion 600 is the same as the other portions except for the difference in the configuration of the lower stage 332 of the bonding portion 300 in the above embodiment, and therefore the description thereof is omitted. The holding surfaces 221 and 241 of the substrate holders 220 and 240 may have any shape.

  The lower stage 632 of the joint 600 includes a base 611, a plurality of actuators 612, and a suction unit 613. The base 611 supports the suction unit 613 via the plurality of actuators 612.

  The suction unit 613 has a suction mechanism such as a vacuum chuck or an electrostatic chuck, and forms the upper surface of the lower stage 632. The adsorption unit 613 adsorbs and holds the carried-in substrate holder 240.

  The plurality of actuators 612 are disposed below the suction unit 613 along the lower surface of the suction unit 613. Further, the plurality of actuators 612 are individually driven by being supplied with the working fluid from the pressure source 622 from the outside through the pump 615 and the valve 616 under the control of the control unit 150. As a result, the plurality of actuators 612 expand and contract by different amounts of expansion and contraction individually in the thickness direction of the lower stage 632, that is, the bonding direction of the substrate 210 and the bare silicon 250, to raise or lower the coupled region of the suction portion 613. .

  In addition, the plurality of actuators 612 are coupled to the suction unit 613 via links, respectively. The central portion of the suction portion 613 is coupled to the base portion 611 by a support 614. When the plurality of actuators 612 operate, the surface of the suction unit 613 is displaced in the thickness direction for each area where the plurality of actuators 612 are coupled.

  FIG. 59 is a schematic view showing the layout of the actuator 612. As shown in FIG. The plurality of actuators 612 are radially disposed about the support 614. In addition, the arrangement of the plurality of actuators 612 can be regarded as concentric circles centered on the support 614. The arrangement of the plurality of actuators 612 is not limited to that illustrated, and may be arranged, for example, in a lattice, a spiral, or the like. As a result, the bare silicon 250 can be corrected by changing its shape concentrically, radially, spirally, or the like. Thus, the actuator 612, the pump 615, and the valve 616 are an example of the correction device.

  FIG. 60 is a schematic view showing an operation of a part of the bonding portion 600. As shown in FIG. As illustrated, the plurality of actuators 612 can be expanded and contracted by individually opening and closing the valves 616 to change the shape of the adsorption portion 613. Therefore, if the suction unit 613 sucks the substrate holder 240 and the substrate holder 240 holds the bare silicon 250, the substrate holder 240 and the bear are changed by changing the shape of the suction unit 613. The shape of the silicon 250 can be changed and curved.

  As shown in FIG. 59, the plurality of actuators 612 can be considered to be arranged concentrically, that is, arranged in the circumferential direction of the lower stage 632. Therefore, as shown by a dotted line M in FIG. 59, a plurality of actuators 612 for each circumference are grouped, and the drive amount is increased toward the periphery to raise the center of the surface of the adsorption portion 613 to form a spherical surface, The shape can be changed to a paraboloid surface, a cylindrical surface or the like.

  Thus, as in the case where the bare silicon 250 is held by the curved substrate holder 240, the bare silicon 250 can be curved to change its shape following a spherical surface, a paraboloid, or the like. Therefore, at the upper surface in the figure of bare silicon 250 at the upper surface in the figure of bare silicon 250, the shape changes so that the surface of bare silicon 250 expands in the surface direction bordering on the central portion B of bare silicon 250 in the thickness direction Let In the lower surface of bare silicon 250 in the figure, the shape is changed so that the surface of bare silicon 250 shrinks in the surface direction. Furthermore, by controlling the expansion and contraction amount of the plurality of actuators 612 individually, the shape of the bare silicon 250 may be changed in a non-linear manner including a plurality of uneven portions in addition to other shapes such as a cylindrical surface. it can.

  Therefore, the distortion corresponding to the non-linear distortion assumed to occur in the substrate 230 when the substrate 210 and the substrate 230 are directly bonded and joined is locally controlled to the bare silicon 250 by individually operating the plurality of actuators 612 through the control unit 150 By directly bonding the substrate 210 to the bare silicon 250 in a state where the bending occurs, the substrate 210 can be produced. That is, it is the bonding condition between the substrate 210 and the bare silicon 250 which is determined by the control unit 150 to cause local bending in the bare silicon 250, and the plurality of actuators 612 are satisfied so as to satisfy the bonding condition. Are operated individually. If local bending occurs in the substrate 210 before bonding to the bare silicon 250, the local bending of the bare silicon 250 is generated by taking account of the local bending of the substrate 210. May be

  In the above example, the suction portion 613 has a shape that bulges at the center. However, it is also possible to reduce the magnification distortion of the bare silicon 250 by increasing the amount of movement of the plurality of actuators 612 at the peripheral portion of the suction portion 613 and depressing the central portion with respect to the peripheral portion of the suction portion 613 it can. In addition to these, in order to correct the difference in strain between the substrates 210 and 230, another correction method such as thermal expansion or thermal contraction due to temperature control may be further introduced.

  In the above embodiments, the bonding condition of any pair of the substrates 210 and 230 and the bare silicon 250 is included by selecting one of the plurality of substrate holders 220 and 240 having different curvatures of the holding surface. The deformation of the substrate 210 or the bare silicon 250 is determined in advance. 56 to 60, the substrate 210 or bare silicon 250 is included in the bonding condition of any pair of the substrates 210 and 230 and the bare silicon 250 by deforming the substrate 210 or the bare silicon 250 by the actuator. It has been described that it may be configured to predetermine 250 variations. In addition to or in place of these, the substrate holder 220, 240 may be configured to include a pneumatic or spring-type central projecting portion, and the projecting amount by the projecting portion may be variable. In this case, the central projection may be a spring-type projecting member that does not use air pressure. In this case, the spring has a pressure enough to deform the substrate 210 or the bare silicon 250, and the pressure of the spring is It is larger than the pressing load when contacting any pair of the substrates 210 and 230 and the bare silicon 250. Furthermore, in the substrate holders 220 and 240, the protrusion may be configured as a plurality of removable protrusions having different heights, so that the amount of protrusion by the protrusions may be variable. Further, in place of the electrostatic adsorption type substrate holders 220 and 240, vacuum adsorption type substrate holders 220 and 240 may be used, and the adsorption portions of the substrate holders 220 and 240 may be a division system using a plurality of banks. A plurality of vacuum holes may be provided along the traveling direction of the bonding wave instead of the division method of the adsorption area using a plurality of banks.

  In the above embodiments, bare silicon 250 and lower stage 332 are illustrated as other members to be bonded to substrate 210 for dummy bonding, but the other members are other substrates on which a structure is formed. It may be. In that case, it may be assumed that high alignment accuracy is not required between the other substrate and the substrate 210 to be bonded. Further, in order to correct in advance the positional deviation occurring between the other substrate and the substrate 210 to be bonded, a circuit region whose arrangement has been corrected may be formed on the other substrate in advance. Specifically, the amount of displacement due to bonding process magnification strain due to the atmosphere interposed between bonding surfaces and strain due to crystal anisotropy of the (100) substrate on the release side is equal to or less than a predetermined threshold value The shot map when the circuit area is formed by exposure is corrected so that the distance between the circuit areas is gradually narrowed from the center to the peripheral edge of the other substrate by 45 °. The spacing of the directions is made narrower than the spacing of the 0 ° direction and the 90 ° direction.

  In each of the plurality of embodiments described above, measures against strain and magnification strain due to crystal anisotropy included in linear strain and non-linear strain due to local bending of the substrates 210 and 230 are individually described. . Several measures may be combined, and preferably all measures are taken, in order to eliminate positional deviation that occurs in the laminated substrate 290 formed by bonding the substrates 210 and 230 due to these various distortions. It is also good.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various changes or modifications can be added to the above embodiment. It is also apparent from the scope of the claims that the embodiments added with such alterations or improvements can be included in the technical scope of the present invention.

  The execution order of each process such as operations, procedures, steps, and steps in the apparatuses, systems, programs, and methods shown in the claims, the specification, and the drawings is particularly “before”, “preceding” It is to be noted that “it is not explicitly stated as“ etc. ”and can be realized in any order as long as the output of the previous process is not used in the later process. With regard to the flow of operations in the claims, the specification and the drawings, even if it is described using “first,” “next,” etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

Reference Signs List 100 substrate bonding apparatus, 110 housing, 120, 130 substrate cassette, 140 transfer unit, 150 control unit, 208, 209 silicon single crystal substrate, 210, 230, 260, 270, 280 substrate, 212, 232, 262, 272, 282 scribe line, 214 notch, 216, 236 circuit area, 218, 238 alignment mark, 220, 240, 242 substrate holder, 221, 241 holding surface, 250, 255 bare silicon, 290, 292 laminated substrate, 300 bonding portion, 310 Frame body 312 bottom plate 316 top plate 322 upper stage 323 support arm 324, 334 microscope 325 support portion 326, 336 activation device 331 X direction drive portion 332 lower stage 333 Y direction drive portion 338 Lifting drive, 4 0 Horudasutokka, 500 pre-aligner, 600 joint 611 base 612 actuator, 613 suction unit, 614 posts, 615 pumps, 616 valves, 622 pressure source 632 lower stage

Claims (16)

The convexly deformed protruding portion of the first substrate is brought into contact with another member to form a first contact region, and then the first contact region is expanded to cause distortion in the first substrate. A first bonding step of bonding the first substrate and the other member while
The convexly deformed protruding portion of the second substrate is brought into contact with the first substrate on which the strain has occurred to form a second contact region, and then the second contact region is expanded, A second bonding step of bonding the first substrate and the second substrate while causing the second substrate to be distorted;
Equipped with
The first bonding step is performed based on information on distortion estimated to be generated in the second substrate when the first substrate and the second substrate are bonded, the first substrate and the other. A substrate bonding method including the step of determining the bonding conditions for bonding with the members. In the first bonding step, the first substrate and the other member are bonded by activating the mutually bonded surfaces of the first substrate and the other member.
The substrate bonding method according to claim 1. In the second bonding step, the first substrate and the second substrate are bonded by activating the mutually bonded surfaces of the first substrate and the second substrate.
The substrate bonding method according to claim 1. In the first bonding step, the first substrate and the other member are bonded while the other member is flat.
The substrate bonding method according to any one of claims 1 to 3. Bonding the first substrate and the second substrate while the first substrate is flat in the second bonding step;
The substrate bonding method according to any one of claims 1 to 4. The information on the distortion generated on the second substrate includes information on the measured distortion and at least one of information causing the distortion.
The substrate bonding method according to any one of claims 1 to 5. The bonding conditions include at least an environmental condition around the first substrate and the other member, and an activation condition when activating the respective surfaces of the first substrate and the other member. Including one,
The substrate bonding method according to any one of claims 1 to 6. The information on the strain generated in the second substrate is caused by the strain caused by the atmosphere interposed between the first substrate and the second substrate, and the crystal anisotropy of the second substrate. Contains information about at least one of the
The substrate bonding method according to any one of claims 1 to 7. The information on the distortion generated in the second substrate further includes information on non-linear distortion due to local deformation in the second substrate,
The substrate bonding method according to any one of claims 1 to 8. The bonding condition for bonding the first substrate and the other member is different from the bonding condition for bonding the first substrate and the second substrate.
The substrate bonding method according to any one of claims 1 to 9. The bonding conditions for bonding the first substrate and the other member are the same as the bonding conditions for bonding the first substrate and the second substrate.
The substrate bonding method according to any one of claims 1 to 9.   In the step of determining the bonding condition, a strain corresponding to a strain estimated to occur in the second substrate is generated in the first substrate when the first substrate and the second substrate are bonded. The substrate bonding method according to any one of claims 1 to 11, wherein the bonding condition for causing the bonding is determined. Bonding the first substrate and the other member while maintaining the holding of the other member by the substrate holding stage in the first bonding step;
In the second bonding step, the first substrate and the second substrate are bonded in a state in which the holding of the other member bonded to the first substrate by the substrate holding stage is maintained.
The substrate bonding method according to any one of claims 1 to 12. The other member is either another substrate on which a structure is formed, or bare silicon on which a structure is not formed.
The substrate bonding method according to claim 13. The other member is any of the other substrate on which the structure is formed, bare silicon in which the structure is not formed, and the substrate holding stage.
The substrate bonding method according to any one of claims 1 to 12. A first holding member for holding a first substrate;
And a second holding member for holding a second substrate,
The convexly deformed projecting portion of the first substrate held by the first holding member is brought into contact with another member to form a first contact area, and then the first contact area is expanded. Bonding the first substrate and the other member while causing the first substrate to distort, and forming a protruding portion of the second substrate held by the second holding member in a convex shape; After forming the second contact area by bringing the second contact area into contact with the first substrate in which the strain is generated, the second contact area is expanded to cause the second substrate to be distorted; A substrate bonding apparatus for bonding a first substrate and a second substrate, wherein
Bonding for bonding the first substrate and the other member based on information on distortion assumed to occur in the second substrate when the first substrate and the second substrate are bonded Substrate bonding apparatus provided with the determination part which determines conditions.

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