JP2019069437A - 触媒ウォッシュコートを備えたウォールフロー型フィルタ - Google Patents
触媒ウォッシュコートを備えたウォールフロー型フィルタ Download PDFInfo
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- JP2019069437A JP2019069437A JP2018223286A JP2018223286A JP2019069437A JP 2019069437 A JP2019069437 A JP 2019069437A JP 2018223286 A JP2018223286 A JP 2018223286A JP 2018223286 A JP2018223286 A JP 2018223286A JP 2019069437 A JP2019069437 A JP 2019069437A
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229920001285 xanthan gum Polymers 0.000 description 1
- 239000000230 xanthan gum Substances 0.000 description 1
- 229940082509 xanthan gum Drugs 0.000 description 1
- 235000010493 xanthan gum Nutrition 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
Classifications
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- F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
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- F01N3/08—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous
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- F01N3/24—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous by thermal or catalytic conversion of noxious components of exhaust characterised by constructional aspects of converting apparatus
- F01N3/28—Construction of catalytic reactors
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- F01N3/00—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust
- F01N3/02—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for cooling, or for removing solid constituents of, exhaust
- F01N3/021—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for cooling, or for removing solid constituents of, exhaust by means of filters
- F01N3/022—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for cooling, or for removing solid constituents of, exhaust by means of filters characterised by specially adapted filtering structure, e.g. honeycomb, mesh or fibrous
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Abstract
Description
実エンジン空燃比/化学量論的エンジン空燃比、 (1)
ここで、ラムダ値1は化学量論的に均衡のとれた(又は化学量論的な)排ガス組成を表し、>1のラムダ値はO2及びNOxの過剰を表し、組成が「希薄」であるとされ、<1のラムダ値はHC及びCOの過剰を表し、組成が「リッチ」であるとされる。空燃比が生成する排ガス組成に応じて、エンジンが「化学量論的」、「希薄」又は「リッチ」に作動する空燃比のことは当技術分野において周知であり:したがって、化学量論的に作動させたガソリンエンジン又は希薄燃焼ガソリンエンジンについても周知である。
NO+1/2O2→NO2 (2);及び
BaO+NO2+1/2O2→Ba(NO3)2 (3)、
ここで、反応(2)において、酸化窒素は白金上の活性酸化部位上で酸素と反応してNO2を形成する。反応(3)は、無機硝酸塩の形態の吸蔵材料によるNO2の吸着を包含する。
Ba(NO3)2→BaO+2NO+3/2O2 又は
Ba(NO3)2→Ba+2NO2+1/2O2 (4);及び
NO+CO→1/2N2+CO2 (5);
(他の反応としては、Ba(NO3)2+8H2→BaO+2NH3+5H2O その後、続いてNH3+NOx→N2+yH2O 又は2NH3+2O2+CO→N2+3H2O+CO2等が挙げられる)。
{HC}+NOx→N2+CO2+H2O (6)
{HC}+O2→CO2+H2O (7)
したがって、良好なHC−SCR触媒は反応(7)よりも反応(6)に対して、より選択的である。
Cu−アルミノシリケートゼオライト選択式触媒還元(SCR)触媒は、あらかじめ用意した試料を、≦5μmの体積によるD90まで破砕することによって調製した。2種類のウォッシュコート試料は、SCR触媒試料及び脱イオン水を用いて調製した。第1の試料は、結合剤を10%(w/w)で含む、36%(w/w)固形物へと調整した、より低粘度の試料であった。第2の試料は、結合剤 を10%(w/w)で含む、43%(w/w)固形物へと調整した、より高粘度の試料であった。比較的高粘度の試料も比較的低粘度の試料もいずれも、界面活性剤又はレオロジー改質剤を含有していなかった。しかしながら、両試料の粘度は、50rpm、スピンドル1を使用したブルックフィールド粘度計で測定して、10〜40cpの範囲であった。
実施例1に記載したものと同一のCu−アルミノシリケートゼオライトSCR触媒、脱イオン水、10%(w/w)固形物(合計で35%固形物 w/w)の結合剤、及びレオロジー改質剤として0.2重量%の市販のヒドロキシメチルセルロースを使用して、新しいウォッシュコート試料を調製した。新しいウォッシュコート試料の粘度は、ブルックフィールド粘度計において50rpm、スピンドル3で測定して、2000cpであった。この新しいウォッシュコート試料を、出願人の国際出願公開第99/47260号に記載される方法及び装置を使用して、実施例2で使用された比較的高い空隙率(約60%空隙率)のコーティングされていないチタン酸アルミニウムフィルタ基材上にコーティングした、すなわち、(a)モノリスフィルタ基材の上に封じ込め手段を位置決めする工程、(b)所定の量の液体成分を前記封じ込め手段に供給する工程であって(a)の次に(b)の順序で実施される、工程(a)及び(b)、並びに、(c)真空を適用することにより、前記液体成分を基材の少なくとも一部分に引き込み、前記量の実質的にすべてを基材内に保持する工程含む、方法。結果としてコーティングされた製品を乾燥し、次いで焼成した。目標ウォッシュコート負荷は2.2g/in3であった。
実施例2の35%(w/w)固形物の試料であってレオロジー改質剤を含まないものを使用して実施例2で使用された、同一の比較的高い空隙率のチタン酸アルミニウムフィルタ基材を、国際出願公開第2011/080525号に開示される方法及び装置を使用して、コーティングした。すなわち、次の工程を含む:(i)ハニカムモノリス基材を実質的に垂直に保持する工程、(ii)所定の体積の液体を、基材の下方端におけるチャネルの開放端を経由して、基材に導入する工程、(iii)導入された液体を基材内で密封保持する工程、(iv)保持された液体を含む基材を反転する工程、及び、(v)液体を基材のチャネルに沿って引き込むために、基材の下方端におけるチャネルの開放端に真空を適用する工程。この実施例では、ウォッシュコートがフィルタの第1端の開放チャネル内に導入され、その後乾燥され、次に焼成工程が行われた。次に、この第1の「通路」コーティング工程の生成物を第2の「通路」内にコーティングして、SCR触媒コーティングを反対側から、すなわち基材の第2端から基材内に導入し、その後乾燥し、次いで焼成工程を行った。目標ウォッシュコート負荷は2.2g/in3であった。
Claims (48)
- 内燃機関から排出される粒子状物質を含む排ガスを処理するための触媒ハニカムウォールフロー型フィルタであって、第1端及び第2端を有し、かつ、多数の長手方向に延在する第1のチャネル及び第2のチャネルを画定する多数の相互接続する多孔質壁を備えたハニカム基材を備えたフィルタにおいて、第1のチャネルはそれらの側面において第2のチャネルによって境され、かつ第2のチャネルより大きい水力直径を有し、第1のチャネルはハニカム基材の第1端で末端塞栓され、かつ第2のチャネルはハニカム基材の第2端で末端塞栓され、第1のチャネルのチャネル壁面はオンウォール型の触媒ウォッシュコートを備える、触媒ハニカムウォールフロー型フィルタ。
- 第1のチャネルのチャネル壁面上の触媒ウォッシュコートがその相互接続する多孔質壁に追加的に浸透する、請求項1に記載の触媒フィルタ。
- 触媒ウォッシュコートは、オンウォール表面に位置する、相互接続する多孔質壁に浸透する、又は、オンウォール表面に位置し、かつ、第2のチャネル壁の相互接続する多孔質壁に浸透する、請求項1又は2に記載の触媒フィルタ。
- 第1端及び第2端を有し、多数の長手方向に延在する第1のチャネル及び第2のチャネルを画定する多数の相互接続する多孔質壁を備えた触媒ハニカム基材であって、第1のチャネルはそれらの側面において第2のチャネルによって境され、ハニカム基材の第1のチャネルはハニカム基材の第1端及び第2端の両方で開放され、第2のチャネルはハニカム基材の第1端で開放されるがハニカム基材の第2端において末端塞栓で塞がれ;及び、第1の触媒ウォッシュコートは第1のチャネルの多孔質チャネル壁の表面に配置されるか、第1のチャネルの多孔質チャネル壁に浸透するか、又は、多孔質チャネル壁の表面上に配置され、かつ、第1のチャネルの多孔質チャネル壁に浸透し、第1の触媒ウォッシュコートは一端においてハニカム基材の第2端によって画定される、触媒ハニカム基材。
- ハニカム基材の第1端において第1のチャネル内に挿入された末端塞栓を有する請求項4に記載の触媒ハニカム基材と、第2のチャネルの多孔質チャネル壁の表面に配置されるか、第2のチャネルの多孔質チャネル壁に浸透するか、又は、多孔質チャネル壁の表面に配置されかつ第2のチャネルの多孔質チャネル壁に浸透する、第2の触媒ウォッシュコートとを備えた、触媒ハニカムウォールフロー型フィルタであって、第2の触媒ウォッシュコートは一端においてウォールフロー型フィルタ基材の第1端によって画定される、触媒ハニカムウォールフロー型フィルタ。
- 第1のチャネルが第2のチャネルより大きい水力直径を有する、請求項4に記載の触媒ハニカム基材又は請求項5に記載の触媒ハニカムウォールフロー型フィルタ。
- 第1のチャネル及び第2のチャネルが実質的に同一の水力直径を有する、請求項4に記載の触媒ハニカム基材又は請求項5に記載の触媒ハニカムウォールフロー型フィルタ。
- コーティングされていないフィルタの空隙率が40〜70%である、請求項1から7のいずれか一項に記載の触媒ハニカム基材。
- 多孔質基材の多孔質構造の第1の平均孔径が8から45μmである、請求項1から8のいずれか一項に記載の触媒ハニカム基材。
- ウォールフロー型フィルタ基材上の全触媒ウォッシュコート負荷が0.50g in−3<5.00g in−3である、請求項1から9のいずれか一項に記載の触媒ハニカム基材。
- 末端塞栓とチャネル壁の間には触媒ウォッシュコートが存在しない、請求項1から10のいずれか一項に記載の触媒ハニカム基材。
- 第1のチャネル又は第2のチャネルにおける触媒ウォッシュコートが、各々、炭化水素トラップ、三元触媒、NOx吸収剤、酸化触媒、選択式触媒還元(SCR)触媒、H2Sトラップ、アンモニアスリップ触媒(ASC)及び希薄NOx触媒からなる群から選択される、請求項1から11のいずれか一項に記載の触媒ハニカム基材。
- 第1のチャネルの触媒ウォッシュコートがSCR触媒である、請求項1から11のいずれか一項に記載の触媒ハニカム基材。
- 第1のチャネルの触媒ウォッシュコートが第2のチャネルの触媒ウォッシュコートとは異なる、請求項12に記載の触媒ハニカムウォールフロー型フィルタ。
- 軸長「L」を有し、第1及び第2のチャネルが、一端においてハニカム基材の第1端によって画定された「L」未満の軸長に至る第1の区画をなす第1の触媒ウォッシュコートと、一端においてハニカム基材の第2端によって画定された第2の区画をなす第2の触媒ウォッシュコートとでコーティングされる、請求項1から14のいずれか一項に記載の触媒ハニカムウォールフロー型フィルタ。
- 前記又は各触媒ウォッシュコートが1種類以上のモレキュラーシーブを含む、請求項12から15のいずれか一項に記載の触媒ハニカム基材。
- 少なくとも1種類のモレキュラーシーブが小孔、中孔、又は大孔のモレキュラーシーブである、請求項16に記載の触媒ハニカム基材。
- 少なくとも1種類のモレキュラーシーブが、AEI、ZSM−5、ZSM−20、ERI、LEV、モルデナイト、BEA、Y、CHA、MCM−22及びEU−1からなる群から選択される、請求項16又は17に記載の触媒ハニカム基材。
- モレキュラーシーブが金属化されていない、又は、周期表のIB族、IIB族、IIIA族、IIIB族、IVB族、VB族、VIB族、VIB族、及びVIII族からなる群から選択される少なくとも1種類の金属で金属化されている、請求項16から18のいずれか一項に記載の触媒ハニカム基材。
- 金属が、Cr、Co、Cu、Fe、Hf、La、Ce、In、V、Mn、Ni、Zn、Ga、及び貴金属Ag、Au、Pt、Pd及びRhからなる群から選択される、請求項16から19のいずれか一項に記載の触媒ハニカム基材。
- 金属がCu、Pt、Mn、Fe、Co、Ni、Zn、Ag、Ce及びGaからなる群から選択される、請求項16から20のいずれか一項に記載の触媒ハニカム基材。
- 触媒ウォッシュコートがSCR触媒ウォッシュコートであり、金属がCe、Fe及びCuからなる群から選択される、請求項16から21のいずれか一項に記載の触媒ハニカム基材。
- 基材がチタン酸アルミニウムでできている、請求項1から22のいずれか一項に記載の触媒ハニカム基材。
- 請求項1から23のいずれか一項に記載の触媒ハニカム基材を備える、内燃機関のための排気システム。
- 第2のチャネルが上流側に配向されている、請求項24に記載の排気システム。
- フィルタの上流に、還元剤流体を排ガス内に注入するための手段を備える、請求項24又は25に記載の排気システム。
- 触媒ウォッシュコートがSCR触媒であり、還元剤流体が窒素化合物である、請求項26に記載の排気システム。
- 請求項24から27のいずれか一項に記載の排気システムを備えた内燃機関。
- 請求項28に記載の内燃機関を備えた車両。
- 内燃機関から排出される粒子状物質を含む排ガスを処理するための触媒ウォールフロー型フィルタ基材の作製方法であって、ハニカムウォールフロー型フィルタ基材における使用のためにあらかじめ選択された物理的な特性及びパラメータを有し、かつ、ハニカムフロースルー基材モノリスの第1端及び第2端の両方で開放されている多数の長手方向に延在する第1及び第2のチャネルを画定する多数の相互接続する多孔質壁を備えた、第1端及び第2端を有するハニカムフロースルー基材モノリスを提供することであって、第1のチャネルはそれらの側面において第2のチャネルによって境され、かつ、第2のチャネルより大きい水力直径を有する、提供することと、少なくとも、ハニカムフロースルー基材モノリスの第1のチャネルを画定する多孔質チャネル壁面を液体触媒ウォッシュコートに接触させることであって、液体触媒ウォッシュコートの固形物含量;液体触媒ウォッシュコートのレオロジー;フロースルー基材モノリスの空隙率;フロースルー基材モノリスの平均孔径;液体触媒ウォッシュコートの体積平均粒径;及び液体触媒ウォッシュコートのD90(体積による)のうち少なくとも1つが、液体触媒ウォッシュコートが第1のチャネルの多孔質チャネル壁の表面上に残るか、又は多孔質チャネル壁の表面上に残り、かつ第1のチャネルの多孔質チャネル壁に浸透するようにあらかじめ選択される、接触させることと、コーティングされたハニカムフロースルー基材モノリスを乾燥及び焼成することと、末端塞栓を、ハニカムフロースルー基材モノリスの第1端において第1のチャネルの開放端に、ハニカムフロースルー基材モノリスの第2端において第2のチャネルの開放端に、それぞれ挿入して触媒ウォールフロー型フィルタ基材を形成することと、を含む方法。
- 内燃機関から排出される粒子状物質を含む排ガスを処理するための触媒ウォールフロー型フィルタ基材の作製方法であって、ハニカムウォールフロー型フィルタ基材における使用のためにあらかじめ選択された物理的な特性及びパラメータを有し、かつ、多数の長手方向に延在する第1及び第2のチャネルを画定する多数の相互接続する多孔質壁を備えた、第1端及び第2端を有するハニカム基材モノリスを提供することであって、第1のチャネルはそれらの側面において第2のチャネルによって境され、第1のチャネルはハニカム基材モノリスの第1端及び第2端の両方で開放され、かつ第2のチャネルはハニカム基材モノリスの第1端で開放されるがその第2端において末端塞栓で塞がれている、提供することと、コーティングされたハニカム基材モノリスを作製するために、ハニカム基材モノリスの第1のチャネルを画定する多孔質チャネル壁面を液体触媒ウォッシュコートと接触させることであって、液体触媒ウォッシュコートの固形物含量;液体触媒ウォッシュコートのレオロジー;ハニカム基材モノリスの空隙率;ハニカム基材モノリスの平均孔径;液体触媒ウォッシュコートの体積平均粒径;及び液体触媒ウォッシュコートのD90(体積による)のうち少なくとも1つが、液体触媒ウォッシュコートの少なくとも一部が第1のチャネルの多孔質チャネル壁の表面上に残るか、第1のチャネルの多孔質チャネル壁に浸透するか、又は多孔質チャネル壁の表面上に残り、かつ第1のチャネルの多孔質チャネル壁に浸透する、接触させることと、コーティングされたハニカム基材モノリスを乾燥及び焼成することと、ハニカム基材モノリスの第1端において末端塞栓を第1のチャネルの開放端に挿入して触媒ウォールフロー型フィルタ基材を形成することと、を含む方法。
- 第1のチャネルが第2のチャネルより大きい水力直径を有する、請求項31に記載の方法。
- 第1のチャネル及び第2のチャネルが実質的に同一の水力直径を有する、請求項31に記載の方法。
- 第1のチャネルの多孔質チャネル壁を接触させる工程が、それらのチャネルが実質的に垂直になるようにハニカム基材モノリスを配向させることと、それらの下方端からチャネル内に液体触媒ウォッシュコートを導入することによって行われる、請求項30から33のいずれか一項に記載の方法。
- ハニカム基材モノリスの下方端から液体触媒ウォッシュコートを導入する工程が、液体触媒ウォッシュコート浴内にハニカム基材モノリスを浸漬することによって行われる、請求項34に記載の方法。
- ハニカム基材モノリスの下方端から液体触媒ウォッシュコートを導入する工程が、所定の量の液体触媒ウォッシュコートをハニカム基材モノリス内に押し上げることによって行われる、請求項34に記載の方法。
- ハニカム基材の下方端から液体触媒ウォッシュコートを導入する工程が、ハニカム基材モノリスの上方端で真空を適用することにより、液体触媒ウォッシュコートをチャネル内に引き込むことによって行われる、請求項34に記載の方法。
- 第1のチャネルの多孔質チャネル壁を接触させる工程が、それらのチャネルが実質的に垂直になるようにハニカム基材モノリスを配向させること、ハニカム基材モノリスの上方端面上に液体触媒ウォッシュコートを導入すること、及びハニカム基材モノリスの下方端で真空を適用することにより、液体触媒ウォッシュコートをチャネル内に引き込むこと、によって行われる、請求項30から33のいずれか一項に記載の方法。
- 両端が塞栓されていないハニカム基材のコーティングされたチャネルは、それらの一端から真空又は過圧を適用することによってクリアになる、請求項30から38のいずれか一項に記載の方法。
- 液体触媒ウォッシュコートがハニカム基材モノリスの第2端から第1のチャネル壁上にコーティングされる、請求項31及び請求項31に従属した場合における請求項32から39のいずれか一項に記載の方法。
- ハニカム基材モノリスの第1端において第1のチャネルの末端内に末端塞栓を挿入する工程、及び、第2のチャネルの開放末端の方向から相互接続する多孔質壁及び/又は第2のチャネルの表面をウォッシュコーティングする工程を含む、請求項40に記載の方法。
- 末端塞栓によって接触されるチャネル壁の領域が触媒ウォッシュコートを含まない、請求項30から41のいずれか一項に記載の方法。
- ハニカム基材の少なくとも第1端又は第2端に塞栓を挿入してウォールフロー型フィルタを形成する工程における末端塞栓を形成するためのセメント組成物が低温硬化セメントである、請求項30から42のいずれか一項に記載の方法。
- 相互接続する多孔質壁内に位置する;又は、第2のチャネル壁上に位置する;第1のチャネルのチャネル壁上の触媒ウォッシュコートが、各々、炭化水素トラップ、三元触媒、NOx吸収剤、酸化触媒、選択式触媒還元(SCR)触媒、H2Sトラップ、アンモニアスリップ触媒(ASC)及び希薄NOx触媒からなる群から選択される、請求項30から43のいずれか一項に記載のフィルタの作製方法。
- 第1のチャネルのチャネル壁上の触媒ウォッシュコートがSCR触媒である、請求項30から44のいずれか一項に記載のフィルタの作製方法。
- 第1のチャネルの触媒ウォッシュコートが第2のチャネルの触媒ウォッシュコートとは異なる、請求項30から45のいずれか一項に記載のフィルタの作製方法。
- 請求項30から46のいずれか一項に記載の方法によって得られる触媒ハニカムウォールフロー型フィルタ。
- 触媒ハニカムウォールフロー型フィルタの製造における請求項4に記載の触媒ハニカム基材の使用。
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WO2015082892A2 (en) | 2015-06-11 |
US20150152768A1 (en) | 2015-06-04 |
KR20160093060A (ko) | 2016-08-05 |
EP3077083B1 (en) | 2019-07-17 |
DE102014117672A1 (de) | 2015-06-03 |
WO2015082892A3 (en) | 2015-09-24 |
GB201321265D0 (en) | 2014-01-15 |
CN105793529A (zh) | 2016-07-20 |
GB2520776A (en) | 2015-06-03 |
JP2016539803A (ja) | 2016-12-22 |
CN110985165A (zh) | 2020-04-10 |
EP3077083A2 (en) | 2016-10-12 |
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