[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JP2018137280A - 発光装置の製造方法 - Google Patents

発光装置の製造方法 Download PDF

Info

Publication number
JP2018137280A
JP2018137280A JP2017029062A JP2017029062A JP2018137280A JP 2018137280 A JP2018137280 A JP 2018137280A JP 2017029062 A JP2017029062 A JP 2017029062A JP 2017029062 A JP2017029062 A JP 2017029062A JP 2018137280 A JP2018137280 A JP 2018137280A
Authority
JP
Japan
Prior art keywords
capillary
pad
light
light emitting
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017029062A
Other languages
English (en)
Other versions
JP6680239B2 (ja
Inventor
健作 ▲濱▼田
健作 ▲濱▼田
Kensaku Hamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2017029062A priority Critical patent/JP6680239B2/ja
Priority to US15/891,571 priority patent/US20180240935A1/en
Publication of JP2018137280A publication Critical patent/JP2018137280A/ja
Application granted granted Critical
Publication of JP6680239B2 publication Critical patent/JP6680239B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H01L23/4855—Overhang structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05666—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05669—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05671—Chromium [Cr] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05673—Rhodium [Rh] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/0568—Molybdenum [Mo] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05684—Tungsten [W] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45169—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H01L2224/48096—Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85047—Reshaping, e.g. forming the ball or the wedge of the wire connector by mechanical means, e.g. severing, pressing, stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85447—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Wire Bonding (AREA)

Abstract

【課題】ワイヤ接続時にパッドがダメージを受けやすい。【解決手段】上面にパッドを備えた発光素子を準備する工程と、キャピラリに挿通されたワイヤの先端を溶融してイニシャルボールを形成する工程と、イニシャルボールをパッドに当接し、キャピラリでイニシャルボールを押圧して変形させてボール部を形成した後、キャピラリを所定の時間静止させる工程と、キャピラリに超音波を印加する工程と、を備える発光装置の製造方法。【選択図】図１

Description

本発明は、発光装置の製造方法に関する。
発光装置の製造工程において、発光素子に給電するためのワイヤを接続する工程が行われる。放電によって形成されたイニシャルボールを急冷して所定の硬度とした後に、発光素子のパッドに押し付けて接続する方法が知られている（例えば、特許文献１）。これにより、ワイヤとパッドとを良好に接合することができる。
特開昭６０−７０７５０号公報
しかしながら、硬くしたイニシャルボールによって、パッドがダメージを受けやすくなる。
本発明の実施形態は、以下の構成を含む。
上面にパッドを備えた発光素子を準備する工程と、キャピラリに挿通されたワイヤの先端を溶融してイニシャルボールを形成する工程と、イニシャルボールをパッドに当接し、キャピラリでイニシャルボールを押圧して変形させてボール部を形成した後、キャピラリを所定の時間静止させる工程と、キャピラリに超音波を印加する工程と、を備える発光装置の製造方法。
上記により、パッドのダメージを低減しつつ、ワイヤとパッドとの接合を良好にすることができる。
図１は、実施形態に係る発光装置の製造方法で得られる発光装置の一例を示す概略断面図である。 図２Ａは、実施形態に係る発光装置の製造方法を説明する概略図である。 図２Ｂは、実施形態に係る発光装置の製造方法を説明する概略図である。 図２Ｃは、実施形態に係る発光装置の製造方法を説明する概略図である。 図２Ｄは、実施形態に係る発光装置の製造方法を説明する概略図である。
本発明を実施するための形態を、以下に図面を参照しながら説明する。ただし、以下に示す形態は、本発明の技術思想を具体化するための発光装置の製造方法を例示するものであって、本発明は、発光装置の製造方法を以下に限定するものではない。
また、本明細書は、特許請求の範囲に示される部材を、実施の形態の部材に特定するものでは決してない。特に、実施の形態に記載されている構成部品の寸法、材質、形状、その相対的配置等は、特定的な記載がない限りは、本開示の範囲をそれのみに限定する趣旨ではなく、単なる説明例にすぎない。尚、各図面が示す部材の大きさや位置関係等は、説明を明確にするため誇張していることがある。さらに以下の説明において、同一の名称、符号については同一もしくは同質の部材を示しており、詳細説明を適宜省略する。
図１は実施形態に係る発光装置の製造方法によって得られる発光装置１０の概略断面図を示す。発光装置１０は、発光素子２０と、基板１１と、ワイヤ３０と、を備える。更に、発光素子２０及びワイヤ３０を被覆する封止部材４０と、を備える。
発光素子２０は、半導体層をふくむ積層構造体２２と、積層構造体２２の上面のパッド２１と、を備える。基板１１は、絶縁性の基材１２と、発光素子２０に給電するための電極として機能する導電部材１３と、を備える。
ワイヤ３０は、発光素子２０のパッド２１と接続されるボール部３２と、基板１１の導電部材１３と接続される接続部３４と、ボール部３２と接続部３４との間のループ部３３と、を備える。
上述のような発光装置１０は、以下の製造方法によって得ることができる。図２Ａ〜図２Ｄは、実施形態に係る製造方法を説明した概略図である。
実施形態に係る発光装置の製造方法は、主として以下の工程を備える。すなわち、上面にパッドを備えた発光素子を準備する工程と、イニシャルボールを形成する工程と、ボール部を形成してキャピラリを静止する工程と、キャピラリに超音波を印加する工程と、を備える。以下、各工程について詳説する。
＜パッドを備えた発光素子を準備する工程＞
図２Ａに示すように、上面にパッドを備えた発光素子２０を準備する。詳細には、発光素子２０は、発光層を含む半導体層を備えた積層構造体２２と、その積層構造体２２に通電するための電極として機能するパッド２１と、を備える。
積層構造体は、例えば、半導体層としてＩｎＸＡｌＹＧａ１−Ｘ−ＹＮ（０≦Ｘ、０≦Ｙ、Ｘ＋Ｙ≦１）等の窒化物系化合物半導体が好適に用いられる。素子基板としては、例えば、サファイア、ＧａＮ等が挙げられる。
発光素子２０は、図２Ａに示すように、発光素子２０の上面（積層構造体２２の上面）に、一対の電極として機能するように２つのパッド２１を備えることができる。パッド２１の数はこれに限らず、１又は３以上備えることができる。パッド２１としては、例えば、Ａｕ、Ｐｔ、Ｐｄ、Ｒｈ、Ｎｉ、Ｗ、Ｍｏ、Ｃｒ、Ｔｉ等が挙げられる。パッド２１の厚みは、例えば、０．５μｍ〜１０μｍ程度とすることができる。
上述のような発光素子２０を準備する工程は、基板１１上に載置する工程を備えてもよい。あるいは、発光素子２０を準備する工程は、基板１１上に載置された発光素子２０を準備する工程でもよい。発光素子２０と基板１１とは、導電性又は絶縁性の接合部材で固定されている。
基板１１は、電極として機能する導電部材１３と、それを保持する絶縁性の基材１２とを備える。基板１１は、図１に示すような凹部１４を備えることができる。あるいは、基板１１は平板状であってもよい。基板１１は、当該分野で用いられる基板１１を用いることができる。例えば、基材１２として成形樹脂を備え、導電部材１３としてリードとを備えた樹脂パッケージを用いることができる。また、基材１２としてセラミックを備え、導電部材１３として配線を備えたセラミックパッケージ等を用いることができる。
発光素子２０が載置された基板１１を、ワイヤボンダの所定の位置に固定する。
＜イニシャルボールを形成する工程＞
発光素子２０にワイヤ３０を接続するために、まず、図２Ａに示すように、イニシャルボール３１を形成する。詳細には、キャピラリ５０の貫通孔内に挿通されたワイヤ３０Ａの先端を電気放電等によって溶融させることで、イニシャルボール３１を形成する。イニシャルボール３１はワイヤ３０Ａの先端に設けられた球状部分を指す。電気放電等の条件は、ワイヤ３０Ａの材料、組成、径、あるいは、目的とするイニシャルボール３１の大きさ等に応じて適宜選択することができる。
＜イニシャルボールをパッドに当接し変形させる工程＞
次に、図２Ｂに示すように、イニシャルボー３１を発光素子２０の上面のパッド２１に当接し、キャピラリ５０で押圧する。これにより、球状のイニシャルボール３１が変形して半球状のボール部３２となる。そして、ボール部３２にキャピラリ５０を接触させた状態で、キャピラリ５０を所定の時間、静止させる。詳細には、キャピラリ５０は、ボール部３２が所定の厚みになるまで荷重を加えており、その高さを維持しつつ、更なる変形をしないように荷重をかけた状態で静止させる。
キャピラリ５０の静止時間は、例えば、０．１ｍ秒〜２５５ｍ秒とすることができ２ｍ秒〜１００ｍ秒が好ましい。静止時間を設けることで、ボール部３２の硬度が徐々に高くなる。詳細には、電気放電によって昇温されて溶融し、硬度が低下していたボール部３２が、経時により冷却されて硬度が高くなる。尚、冷却方法は、キャピラリ５０の動作を停止して静止することのみで自然冷却する方法でもよく、あるいは、静止中に冷媒としてフロンガス等の不活性ガスなどを吹き付けるなどして強制冷却する方法でもよい。
＜キャピラリに超音波を印加する工程＞
上述のように、キャピラリ５０を所定時間静止させた後に、図２Ｃに示すように、超音波を印加する。超音波は、たとえば、周波数は６０ｋＨｚ〜１５０ｋＨｚ程度とすることができ、印加時間は１ｍ秒〜２５５ｍ秒で設定できるが５ｍ秒〜１００ｍ秒程度が好ましい。ボール部３２は、上述のように所定時間静止させたため、パッド２１に当接させた直後の硬さよりも硬くなっている。そのようなボール部３２に超音波を印加して振動させることで、パッドの内部にボール部３２の一部をめり込ませ易くすることができる。
キャピラリ５０の先端にイニシャルボール３１を形成した状態で静止するのではなく、イニシャルボール５０をパッド２１に当接させてボール部３２を形成した後に静止させることで、パッド２１にイニシャルボール３１を当接させる際のダメージを低減することができる。
超音波を印加することで、パッド２１とボール部３２の界面の酸化被膜や汚れ等が超音波振動により取り除かれる。上述のように、イニシャルボール３２よりも硬度の高いボール部３２とすることで、超音波振動が伝わり易く、接合界面における結晶粒子同士の結合を生成し易くなる。これにより、ボール部３２とパッド２１との接合を良好にすることができる。
上述のように、パッド２１にボール部３２を接合した後、図２Ｄに示すようにキャピラリ５０を移動して、ワイヤ３０Ａを基板１１上に当接させ、超音波及び荷重を印加する。その後、ワイヤ３０Ａを切断することで、図１に示すような、ワイヤ３０の接合部３４とすることができる。
ワイヤ３０としては、金、銀、銅、白金、アルミニウム等の金属及び少なくともそれらの金属を含有する合金を用いた導電性ワイヤが挙げられる。特に、銀含ワイヤは、金ワイヤに比して光の吸収が少なく反射率が高いため、発光装置に用いられるワイヤとして有用である。しかしながら、銀含ワイヤは金ワイヤに比して硬度が高く、接合性が低くなり易い。上述のような接合方法を用いて銀含ワイヤを接合することで、パッド２１との接合性を良好とすることができる。銀含ワイヤとしては、銀の含有率が１０％〜１００％のものを用いることができる。銀含ワイヤは、銀以外に金、パラジウムなどの金属を含むことができる。
ワイヤ３０の径は、１８μｍ〜３０μｍが好ましい。ワイヤの線膨張係数は、１４．２×１０-６以上１９．７×１０-６以下が好ましく、更に、１７．６×１０-６以上１８．９×１０-６以下が好ましい。
＜その他の工程＞
その他の工程として、発光素子２０及びワイヤ３０を封止する封止部材４０を形成する工程を備えてもよい。封止部材の材料としては、発光素子からの光を透過可能な透光性を有し、且つ、耐光性を有するものが好ましい。具体的な材料としては、シリコーン樹脂組成物、変性シリコーン樹脂組成物、エポキシ樹脂組成物、変性エポキシ樹脂組成物、アクリル樹脂組成物等の、発光素子からの光を透過可能な透光性を有する絶縁樹脂組成物を挙げることができる。また、シリコーン樹脂、エポキシ樹脂、ユリア樹脂、フッ素樹脂及びこれらの樹脂を少なくとも１種以上含むハイブリッド樹脂等も用いることができる。さらにまた、これらの有機物に限られず、ガラス、シリカゾル等の無機物も用いることができる。このような材料に加え、所望に応じて着色剤、光拡散剤、光反射材、各種フィラー、波長変換部材（蛍光体）などを含有させることもできる。
蛍光体としては、例えば、酸化物系、硫化物系、窒化物系の蛍光体などが挙げられる。例えば、発光素子として青色発光する窒化ガリウム系発光素子を用いる場合、青色光を吸収して黄色〜緑色系発光するＹＡＧ系、ＬＡＧ系、緑色発光するＳｉＡｌＯＮ系（βサイアロン）、赤色発光するＳＣＡＳＮ、ＣＡＳＮ系、ＫＳＦ系蛍光体（Ｋ２ＳｉＦ６：Ｍｎ）、硫化物系蛍光体、ナノ蛍光体等の少なくとも１種、又は２種以上を用いることができる。これらの蛍光体は、封止部材中に５質量％以上１２０質量％以下含有させるのが好ましい。
以下、本開示に係る一実施例について詳説する。
[実施例１]
基板として開口部形状が円形の凹部を備えた樹脂パッケージを準備する。基板は銅を主成分とするリードフレームに、成形樹脂が一体的に成形されており、一枚の基板で複数個の発光装置を形成することができる。凹部の底面に露出されたリードフレーム上に、樹脂を主成分とする接合部材を介して発光素子を載置する。発光素子は、窒化ガリウム系半導体層を備えた積層構造体と、その上面に金を主成分とするパッドを備えている。パッドは、上面視円形であり、ｐ側パッドとｎ側パッドの２つを備える。パッドの厚みは１．２μｍである。
上述の基板をワイヤボンダの所定の位置に固定する。基板の上方にはキャピラリが配置されている。キャピラリの貫通孔内にはワイヤが挿通されている。ワイヤは主としてＡｇ８０％、Ａｕ２０％を含む。ワイヤの径は２５μｍである。キャピラリの先端から延出するワイヤに、３０ｍＡの電流をかけて電気放電し、径が４９μｍのイニシャルボールを形成する。その後、イニシャルボールをパッドに当接させ、キャピラリに３０〜４５ｇｆの荷重をかけて押圧して、厚みが９μｍのボール部を形成する。その状態で約６ミリ秒静止する。次に、周波数６０ｋＨｚの超音波を１０ｍ秒印加する。次に、キャピラリを移動させてワイヤを凹部内のリードフレーム上に接合させる。
凹部内に、液状の樹脂部材を注入し、硬化させる。樹脂部材は、主成分としてシリコーン系樹脂と、ＹＡＧ蛍光体と、を含んでいる。最後に基板を個片化して発光装置とする。
上述のようにしてパッドに接合されたワイヤの接合強度を、シェア強度試験によって測定した。キャピラリを静止させる時間を設けずに、ボール部を形成した直後に超音波を印加した方法で接合したワイヤの接合強度と比較した。本実施例の接合方法によって接合したワイヤは、比較例のワイヤに、シェア強度が約２０〜３０％向上していた。また、シェア後パッド上の金残り量は、１４〜１５％増加していた。
本開示の発光装置は、照明器具、ディスプレイ、携帯電話の液晶表示装置用のバックライト、動画照明補助光源、その他の一般的民生用光源などに利用することができる。
１０…発光装置
１１…基板
１２…基材
１３…導電部材
１４…凹部
２０…発光素子
２１…パッド
２２…積層構造体
３０、３０Ａ…ワイヤ
３１…イニシャルボール
３２…ボール部
３３…ループ部
３４…接続部
４０…封止部材
５０…キャピラリ

Claims (3)

  1. 上面にパッドを備えた発光素子を準備する工程と、
    キャピラリに挿通されたワイヤの先端を溶融してイニシャルボールを形成する工程と、
    前記イニシャルボールを前記パッドに当接し、前記キャピラリで前記イニシャルボールを押圧して変形させてボール部を形成した後、前記キャピラリを所定の時間静止させる工程と、
    前記キャピラリに超音波を印加する工程と、
    を備える発光装置の製造方法。
  2. 前記キャピラリを静止する時間は、０．１ｍ秒〜２５５ｍ秒である、請求項１記載の発光装置の製造方法。
  3. 前記ワイヤは、銀を１０％〜１００％含む請求項１又は請求項２記載の発光装置の製造方法。
JP2017029062A 2017-02-20 2017-02-20 発光装置の製造方法 Active JP6680239B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017029062A JP6680239B2 (ja) 2017-02-20 2017-02-20 発光装置の製造方法
US15/891,571 US20180240935A1 (en) 2017-02-20 2018-02-08 Method for manufacturing light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017029062A JP6680239B2 (ja) 2017-02-20 2017-02-20 発光装置の製造方法

Publications (2)

Publication Number Publication Date
JP2018137280A true JP2018137280A (ja) 2018-08-30
JP6680239B2 JP6680239B2 (ja) 2020-04-15

Family

ID=63167434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017029062A Active JP6680239B2 (ja) 2017-02-20 2017-02-20 発光装置の製造方法

Country Status (2)

Country Link
US (1) US20180240935A1 (ja)
JP (1) JP6680239B2 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023237505A1 (en) * 2022-06-08 2023-12-14 Signify Holding B.V. Use of ksf phosphor in leds with wire-bonds with maximum amount of silver

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63217633A (ja) * 1987-03-06 1988-09-09 Hitachi Ltd ワイヤボンデイング方法
JPH04279040A (ja) * 1991-01-08 1992-10-05 Nec Corp ワイヤボンディング方法
JPH0547860A (ja) * 1991-08-08 1993-02-26 Shinkawa Ltd ワイヤボンデイング方法
JPH10125711A (ja) * 1996-10-17 1998-05-15 Mitsubishi Electric Corp 半導体装置およびそのワイヤボンディング方法並びにワイヤボンディング装置
JP2006303168A (ja) * 2005-04-20 2006-11-02 Sharp Takaya Denshi Kogyo Kk ワイヤボンディング方法及び装置
JP2009094402A (ja) * 2007-10-11 2009-04-30 Nec Corp ワイヤボンディング方法及びワイヤボンディング装置
JP2011181888A (ja) * 2010-02-03 2011-09-15 Toshiba Lighting & Technology Corp 発光装置及び照明装置
JP2012099577A (ja) * 2010-10-29 2012-05-24 Sumitomo Metal Mining Co Ltd ボンディングワイヤ
JP2013004905A (ja) * 2011-06-21 2013-01-07 Mitsubishi Chemicals Corp 半導体発光装置用パッケージ及び半導体発光装置
JP2013179273A (ja) * 2012-01-31 2013-09-09 Nichia Chem Ind Ltd 発光装置
US20140070235A1 (en) * 2012-09-07 2014-03-13 Peter Scott Andrews Wire bonds and light emitter devices and related methods
JP2014183230A (ja) * 2013-03-19 2014-09-29 Toshiba Lighting & Technology Corp 発光装置及び照明装置
JP2016178135A (ja) * 2015-03-19 2016-10-06 シャープ株式会社 発光装置の製造方法および発光装置

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3459355A (en) * 1967-10-11 1969-08-05 Gen Motors Corp Ultrasonic welder for thin wires
US4373653A (en) * 1981-09-10 1983-02-15 Raytheon Company Method and apparatus for ultrasonic bonding
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
US4523071A (en) * 1984-05-14 1985-06-11 Hughes Aircraft Company Method and apparatus for forming a ball at the end of a wire
US5302550A (en) * 1985-12-24 1994-04-12 Mitsubishi Denki Kabushiki Kaisha Method of bonding a microelectronic device
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
JPH0244745A (ja) * 1988-08-05 1990-02-14 Sharp Corp ワイヤボンディング方法
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding
US5176310A (en) * 1988-11-28 1993-01-05 Hitachi, Ltd. Method and apparatus for wire bond
US20070228110A1 (en) * 1993-11-16 2007-10-04 Formfactor, Inc. Method Of Wirebonding That Utilizes A Gas Flow Within A Capillary From Which A Wire Is Played Out
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
JP2001015541A (ja) * 1999-06-28 2001-01-19 Sumitomo Electric Ind Ltd 半導体装置および半導体装置の製造方法
JP2004303861A (ja) * 2003-03-31 2004-10-28 Renesas Technology Corp 半導体装置およびその製造方法
US7845542B2 (en) * 2005-09-22 2010-12-07 Palomar Technologies, Inc. Monitoring deformation and time to logically constrain a bonding process
US20080293235A1 (en) * 2007-05-22 2008-11-27 Harris Corporation Compound wirebonding and method for minimizing integrated circuit damage
CN105006462B (zh) * 2009-06-18 2019-03-01 罗姆股份有限公司 半导体装置
US20120153444A1 (en) * 2009-06-18 2012-06-21 Rohm Co., Ltd Semiconductor device
JP4951090B2 (ja) * 2010-01-29 2012-06-13 株式会社東芝 Ｌｅｄパッケージ
TW201133944A (en) * 2010-03-30 2011-10-01 Orbit Semicon Ltd Light-emitting diode chip and package structure thereof
US20120018768A1 (en) * 2010-07-26 2012-01-26 Intematix Corporation Led-based light emitting devices
JP5616739B2 (ja) * 2010-10-01 2014-10-29 新日鉄住金マテリアルズ株式会社 複層銅ボンディングワイヤの接合構造
JP2012138476A (ja) * 2010-12-27 2012-07-19 Renesas Electronics Corp 半導体装置の製造方法
KR101746614B1 (ko) * 2011-01-07 2017-06-27 삼성전자 주식회사 발광소자 패키지 및 그 제조방법
KR20130026805A (ko) * 2011-09-06 2013-03-14 삼성전자주식회사 반도체 패키지의 와이어 본딩 시스템
WO2013036481A2 (en) * 2011-09-06 2013-03-14 Cree, Inc. Light emitter packages and devices having improved wire bonding and related methods
JP5651575B2 (ja) * 2011-12-27 2015-01-14 株式会社カイジョー ワイヤボンディング装置及びワイヤボンディング方法
KR101620351B1 (ko) * 2012-01-30 2016-05-12 삼성전자주식회사 회로소자의 와이어 본딩 방법
US9153554B2 (en) * 2012-04-22 2015-10-06 Kulicke And Soffa Industries, Inc. Methods of adjusting ultrasonic bonding energy on wire bonding machines
JP6428249B2 (ja) * 2013-12-25 2018-11-28 日亜化学工業株式会社 発光装置
TWI538762B (zh) * 2014-01-03 2016-06-21 樂金股份有限公司 銲球凸塊與封裝結構及其形成方法
JP6753051B2 (ja) * 2014-10-31 2020-09-09 日亜化学工業株式会社 発光装置

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63217633A (ja) * 1987-03-06 1988-09-09 Hitachi Ltd ワイヤボンデイング方法
JPH04279040A (ja) * 1991-01-08 1992-10-05 Nec Corp ワイヤボンディング方法
JPH0547860A (ja) * 1991-08-08 1993-02-26 Shinkawa Ltd ワイヤボンデイング方法
JPH10125711A (ja) * 1996-10-17 1998-05-15 Mitsubishi Electric Corp 半導体装置およびそのワイヤボンディング方法並びにワイヤボンディング装置
JP2006303168A (ja) * 2005-04-20 2006-11-02 Sharp Takaya Denshi Kogyo Kk ワイヤボンディング方法及び装置
JP2009094402A (ja) * 2007-10-11 2009-04-30 Nec Corp ワイヤボンディング方法及びワイヤボンディング装置
JP2011181888A (ja) * 2010-02-03 2011-09-15 Toshiba Lighting & Technology Corp 発光装置及び照明装置
JP2012099577A (ja) * 2010-10-29 2012-05-24 Sumitomo Metal Mining Co Ltd ボンディングワイヤ
JP2013004905A (ja) * 2011-06-21 2013-01-07 Mitsubishi Chemicals Corp 半導体発光装置用パッケージ及び半導体発光装置
JP2013179273A (ja) * 2012-01-31 2013-09-09 Nichia Chem Ind Ltd 発光装置
US20140070235A1 (en) * 2012-09-07 2014-03-13 Peter Scott Andrews Wire bonds and light emitter devices and related methods
JP2014183230A (ja) * 2013-03-19 2014-09-29 Toshiba Lighting & Technology Corp 発光装置及び照明装置
JP2016178135A (ja) * 2015-03-19 2016-10-06 シャープ株式会社 発光装置の製造方法および発光装置

Also Published As

Publication number Publication date
JP6680239B2 (ja) 2020-04-15
US20180240935A1 (en) 2018-08-23

Similar Documents

Publication Publication Date Title
JP5535469B2 (ja) 半導体装置の製造方法
US7291866B2 (en) Semiconductor light emitting device and semiconductor light emitting unit
US7947999B2 (en) Luminescent device and method for manufacturing the same
WO2008047933A1 (fr) Ensemble de paquets pour diodes émettrices de lumière d'électrodes supérieure/inférieure et procédé de fabrication de dispositif émetteur de lumière l'utilisant
JP2010199565A (ja) 発光ダイオードの製造方法
JP2015070134A (ja) 発光装置
JP6131555B2 (ja) 発光装置の封止部材の取り外し方法および封止部材を取り外すことが可能な発光装置
JP6947995B2 (ja) 発光装置
JP2015153844A (ja) 発光装置
TW201232842A (en) Light-emitting device package and method of manufacturing the same
JP2010177225A (ja) 表面実装型発光素子の製造方法
JP3685633B2 (ja) チップ型発光素子およびその製造方法
JP5206204B2 (ja) 発光装置
JP6680239B2 (ja) 発光装置の製造方法
JP2012165016A (ja) 発光装置
JP2006279080A (ja) 発光素子ウエハの固定方法
JP2008263246A (ja) 発光装置
JP2014033233A (ja) 発光装置
JP6651699B2 (ja) 側面発光型発光装置の製造方法
JP2005123657A (ja) チップ型発光素子およびその製造方法
JP5880025B2 (ja) 発光装置
JP6244784B2 (ja) 発光装置
JP2007306035A (ja) 発光素子の製造方法
JP2006203080A (ja) 半導体発光装置及び半導体発光装置の製造方法
JP6210211B2 (ja) 発光装置の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180403

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190219

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190418

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190903

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190906

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200218

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200302

R150 Certificate of patent or registration of utility model

Ref document number: 6680239

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250