JP2018198508A - Power semiconductor device and electric power conversion system - Google Patents

Abstract

To provide a power semiconductor device capable of improving cooling efficiency in comparison with conventional ones and reducing an influence of noise on a control circuit, and an electric power conversion system in which a plurality of the power semiconductor devices are connected.SOLUTION: A power semiconductor device comprises: a first substrate 21 and a second substrate 22 which face each other, and extend in a vertical direction; and an electric power semiconductor element 1 which is vertical to each of the first substrate and the second substrate, and is arranged while being sandwiched between the first and second substrates. The electric power semiconductor element includes a main circuit terminal 11 combined to the first substrate, and a control circuit terminal 12 combined to the second substrate. Each of the first and second substrates forms a wall part of an air flowing path 7 in which air flows from a downstream to an upstream in the vertical direction to the electric power semiconductor element.SELECTED DRAWING: Figure 1A

Description

  The present invention relates to a power semiconductor device and a power conversion device configured by connecting a plurality of power semiconductor devices.

Conventionally, in a power semiconductor device having a power semiconductor element (power module), the power semiconductor element is mounted on a substrate with its main surface disposed parallel to the substrate surface (hereinafter referred to as horizontal mounting).
However, in the horizontal mounting, the mounting area of the power semiconductor element occupying the substrate becomes large. Therefore, a vertical mounting power semiconductor device in which the main surface of the power semiconductor element is arranged perpendicular to the substrate surface is also proposed. (For example, Patent Document 1).

JP 2004-152859 A

  On the other hand, in a vertically mounted power semiconductor device with improved mounting efficiency, components of various sizes are mounted on one substrate. Therefore, the wind due to natural convection concentrates on the place where low-profile parts with low pressure loss are mounted, and there is a possibility that a sufficient amount of air cannot be supplied to large parts that originally need to be cooled.

  Moreover, regardless of horizontal mounting or vertical mounting, when a power semiconductor element is mounted on one substrate, a control circuit and a main circuit exist on the substrate. Therefore, noise entering the output terminal of the power semiconductor element or the like and noise generated by the main circuit may affect the control circuit.

  The present invention has been made in order to solve such problems, and a power semiconductor device capable of improving the cooling efficiency and reducing the influence of noise on the control circuit as compared with the prior art, and the power semiconductor An object of the present invention is to provide a power conversion device in which a plurality of devices are connected.

In order to achieve the above object, the present invention is configured as follows.
That is, the power semiconductor device according to an aspect of the present invention includes a first substrate and a second substrate that face each other and extend in a vertical direction, and are perpendicular to the first substrate and the second substrate, respectively. A power semiconductor device including a power semiconductor element sandwiched between a first substrate and a second substrate, wherein the power semiconductor element is disposed on one peripheral portion facing each other at a peripheral portion of a main surface thereof. A main circuit terminal bonded to the first substrate; a control circuit terminal bonded to the second substrate on the other peripheral edge; and the first substrate and the second substrate are connected to the power It is the passage wall part of the airflow which flows from the bottom to the top in the vertical direction with respect to the semiconductor element.

According to the power semiconductor device of one aspect of the present invention, the first substrate and the second substrate are disposed perpendicular to the main surface of the power semiconductor element, disposed with the power semiconductor element interposed therebetween, and vertically A wall portion of the airflow passage extending in the direction is formed. Therefore, the chimney effect is obtained by the first substrate and the second substrate, and the airflow by natural convection can be efficiently supplied to the large components mounted on the first substrate and the second substrate. The cooling efficiency can be increased.
As a result, the service life of the components can be extended, and the reliability of the power semiconductor device can be improved.

Furthermore, according to the power semiconductor device according to the above aspect, the main circuit terminal and the control circuit terminal of the power semiconductor element are respectively positioned at the peripheral portions facing each other in the peripheral portion of the main surface of the power semiconductor element, The main circuit terminals are bonded to the first substrate, and the control circuit terminals are bonded to the second substrate. Here, the first substrate and the second substrate are arranged to face each other, and are separated from each other with the power semiconductor element interposed therebetween. Therefore, compared with the case where the control circuit and the main circuit are mounted on the same substrate, it is possible to reduce the influence of the noise generated by the main circuit and the noise entering from the main circuit terminal on the control circuit. .
As a result, it is possible to prevent the control circuit from malfunctioning due to noise, for example, to improve the reliability of the power semiconductor device, and to facilitate noise countermeasures.

1 is a perspective view showing a schematic configuration of a power semiconductor device in a first embodiment. It is sectional drawing of the power semiconductor device in the A-A 'part shown to FIG. 1A. It is sectional drawing of the power semiconductor device in the B-B 'part shown to FIG. 1A. It is a top view which shows the power semiconductor element with which Embodiment 1-4 is equipped. FIG. 5 is a perspective view illustrating an example of a power conversion device according to a second embodiment while showing connection of a plurality of power semiconductor devices according to the first embodiment. It is a perspective view which shows the other example of the power converter device shown in FIG. FIG. 10 is a perspective view showing a part of a power semiconductor device according to a third embodiment. It is sectional drawing of the electric power semiconductor device in the A-A 'part shown to FIG. 5A. FIG. 10 is a perspective view showing a part of a power semiconductor device according to a fourth embodiment. It is sectional drawing of the electric power semiconductor device in the A-A 'part shown to FIG. 6A.

A power semiconductor device according to an embodiment and a power conversion device in which a plurality of power semiconductor devices are connected will be described below with reference to the drawings. In each figure, the same or similar components are denoted by the same reference numerals. Each figure shows the concept of each component, and does not correspond to the actual product accurately. Furthermore, in order to avoid the following description from being unnecessarily redundant and to facilitate understanding by those skilled in the art, a detailed description of already well-known matters and a redundant description of substantially the same configuration may be omitted. .
Further, the contents of the following description and the accompanying drawings are not intended to limit the subject matter described in the claims.

  In addition, since the power semiconductor element has a large calorific value and requires efficient cooling, each of the following embodiments takes a power semiconductor device including the power semiconductor element as an example. However, the configuration shown in each embodiment is not limited to a power semiconductor element, and can also be applied to a semiconductor device including a semiconductor element that handles normal power.

  The power semiconductor element described in this document is, for example, an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (metal-oxide-semiconductor field-effect transistor), a diode, or the like, and has a power of 200 V or more, or 0.1 kW or more. This corresponds to a semiconductor element to be handled, which is a so-called power module formed by sealing a chip with a resin.

Embodiment 1 FIG.
1A, 1B, and 1C show power semiconductor device 101 according to the first embodiment. The power semiconductor device 101 includes, as basic components, a power semiconductor element 1, a main circuit board 21 corresponding to an example of a first board, and a control circuit board 22 corresponding to an example of a second board, Furthermore, the casing 3, the heat sink 4, and the fan 5 equivalent to an example of a cooling device can be provided. Hereinafter, these components will be sequentially described.

  The power semiconductor element 1 is formed, for example, in a rectangular package as shown in FIG. 2 and has peripheral portions around the main surfaces 1a and 1b (FIG. 1B) that face each other in the thickness direction, and face each other. A main circuit terminal 11 composed of an input part 11a and an output part 11b is projected from one peripheral part 1c, and a control circuit terminal 12 is projected from the other peripheral part 1d.

  As shown in FIG. 1B, the main circuit terminal 11 is bonded to the main circuit board 21, and the control circuit terminal 12 is bonded to the control circuit board 22. As a result, the main circuit board 21 and the control circuit board 22 are positioned so as to face each other and are oriented so as to extend along the vertical direction corresponding to the Z direction shown in FIGS. 1A and 1C. Therefore, the power semiconductor element 1 is disposed perpendicular to the main circuit board 21 and the control circuit board 22 and sandwiched between the main circuit board 21 and the control circuit board 22.

  Although not shown, main circuit components other than the control circuit are mounted on the main circuit board 21. As shown in FIG. 1B, the electronic circuits such as capacitors 6a and 6b that are relatively large and require cooling. Components are also mounted on the main circuit board 21. Note that, for example, a transformer or a coil corresponds to a large component that needs to be cooled. A control circuit is mounted on one control circuit board 22.

  From the viewpoint of space saving, including the embodiments described below, the power semiconductor element 1 has the main circuit board 21 and the main circuit board 21 in a form in which the main surfaces 1a and 1b are oriented along the vertical direction (Z direction). It is attached to the control circuit board 22. However, the present invention is not limited to this, and the power semiconductor element 1 may be attached to the main circuit board 21 and the control circuit board 22 with the main surfaces 1a and 1b oriented in a direction orthogonal to the vertical direction (Z direction). Good. Even in this case, the main circuit board 21 and the control circuit board 22 extend along the vertical direction.

A heat sink 4 is screwed to one main surface 1a of the power semiconductor element 1 arranged as described above through heat radiation grease. As shown in FIG. 1A, the heat sink 4 is disposed on one end side of the main circuit board 21 and the control circuit board 22 in the X direction. The X direction corresponds to one of the X and Y directions orthogonal to the vertical direction (Z direction). In the first embodiment, the main circuit board 21 and the control circuit board 22 and the heat sink 4 are not connected.
Such a heat sink 4 has a plurality of fins 41 provided upright, and in the first embodiment, the fan 5 is placed on the fins 41 so that air can flow between the fins 41 and forced air cooling can be performed. Is provided. The cooling device for cooling the heat sink 4 and the fins 41 is not limited to the fan 5, and for example, a water-cooled type or a type using a semiconductor cooling element can be used.

In addition, it is not limited to forced air cooling, For example, natural air cooling may be used without providing a cooling device such as the fan 5. The fin 41 may be joined to the heat sink 4 by caulking or brazing, for example, or may be integrally formed with the heat sink 4 by extrusion molding or aluminum die casting, for example.
In order to enhance the cooling effect of the heat sink 4, in the first embodiment, as shown in FIG. 1B, the heat sink 4 has a width dimension exceeding the facing distance between the main circuit board 21 and the control circuit board 22 in the Y direction. However, you may have a width dimension smaller than the said space | interval.

The casing 3 is a member that surrounds the power semiconductor element 1 and the capacitors 6a and 6b, which are located between the main circuit board 21 and the control circuit board 22, and constitutes a casing of the power semiconductor device 101. 31, an upper wall 32, and a lower wall 33.
The vertical wall 31 extends along the Z direction (vertical direction), and is disposed facing the heat sink 4 on the other side of the main circuit board 21 and the control circuit board 22. As shown in FIG. 1B, the main circuit board 21 and the control circuit board 22 are fixed to the vertical wall 31 by ribs 35a and 35b as examples of fixing members. A rail, a terminal block, etc. can also be used as another fixing member. Further, the fixing members such as the ribs 35 a and 35 b may be provided on any of the main circuit board 21, the control circuit board 22, and the vertical wall 31.

The upper wall 32 and the lower wall 33 are plate-like members positioned facing each other above and below in the vertical direction, such as the power semiconductor element 1 and the capacitors 6a and 6b, and at the end in the X direction, It is fixed to the vertical wall 31 and the heat sink 4 respectively.
Further, the upper wall 32 and the lower wall 33 have a plurality of openings 36 through which the air flows through the upper wall 32 and the lower wall 33 in the vertical direction. In FIG. 1A, although the rectangular opening 36 is illustrated, the shape and the number thereof are arbitrary. Further, the arrangement state is not limited to the lattice shape shown in the figure, and the openings 36 in the upper wall 32 and the lower wall 33 may be arranged in the same row in the vertical direction, or may not be in the same row. It may be arranged.
Although the casing 3 includes the lower wall 33 including the following embodiments, the lower wall 33 may not be provided.

  With the configuration of the main circuit board 21, the control circuit board 22, the casing 3, and the opening 36 described above, the inside of the casing 3 has a chimney shape along the vertical (Z) direction as shown in FIG. 1C. An airflow passage 7 is formed.

  In a conventional power semiconductor device, components mounted on a substrate are subjected to natural air cooling or positive air cooling (forced air cooling) using, for example, a fan. In the case of natural air cooling, when the size of the components mounted on the substrate varies, the wind due to natural convection concentrates on the place where the low-profile component with low pressure loss is mounted. Therefore, there is a problem that a sufficient air volume cannot be supplied to a large part that needs to be cooled, such as a condenser.

  On the other hand, according to the configuration of the first embodiment, the main circuit board 21 and the control circuit board 22 are arranged perpendicular to the main surfaces 1a and 1b of the power semiconductor element 1 and along the vertical direction. An oriented casing 3 having a plurality of openings 36 is provided. Thus, as described above, the main circuit board 21, the control circuit board 22, and the casing 3 form the airflow passage 7 inside the casing 3, and the chimney effect by the airflow flowing from the bottom to the top in the vertical direction is obtained. . Therefore, for example, the natural convection wind can be efficiently supplied to the large capacitors 6a and 6b and the like, and the cooling performance can be improved as compared with the conventional case. As a result, for example, the capacitors 6a and 6b can have a long lifetime, and the reliability of the power semiconductor device 101 can be improved as compared with the conventional case.

In addition, as described above, the main circuit terminal 11 and the control circuit terminal 12 of the power semiconductor element 1 are formed on the peripheral edge 1c and the peripheral edge 1d facing each other at the peripheral edges of the main surfaces 1a and 1b of the power semiconductor element 1. By arranging, the main circuit board 21 and the control circuit board 22 can be arranged separately.
Therefore, compared with the case where the main circuit and the control circuit are mounted on the same substrate, the influence of noise generated from the main circuit and noise entering from the input unit 11a and the output unit 11b on the control circuit is reduced. Effect is obtained. As a result, the control circuit can be prevented from malfunctioning due to noise, and the reliability of the power semiconductor device 101 can be further increased. In addition, noise countermeasures can be facilitated.

  Furthermore, since the main circuit board 21 and the control circuit board 22 can be separated, the insulation distance design can be simplified, and the gap between the wiring patterns provided as the insulation distance in the conventional design can be reduced. Therefore, there is an effect that the size of the substrate can be reduced as a whole.

  Further, by separating the main circuit board 21 and the control circuit board 22, the soldering process to each board can be separated, and the manufacturing process can be simplified. For example, by mounting only through-hole components on the main circuit board 21, no reflow process is required, and the product lead time can be shortened. On the other hand, by mounting only surface mount components on the control circuit board 22, a flow process is not required, and solder balls or solder bridges are used as compared with the case of a substrate in which surface mount components and through-hole components are mixed. The effect that the fall of the yield of a board | substrate by the above can be suppressed is also acquired.

  As described above, in the first embodiment, the main circuit terminal 11 and the control circuit terminal 12 are mounted on the main circuit board 21 and the control circuit board 22 by soldering, respectively. Also good. For example, the soldering process can be divided as described above by mounting the main circuit terminal 11 by soldering and the control circuit terminal 12 by press-fit, and further improve the assemblability. Can be planned.

In the first embodiment, the power semiconductor element 1 has a configuration in which the power semiconductor element 1 is screwed to the heat sink 4 via heat radiation grease. However, the present invention is not limited to this. It may be attached.
Further, by polishing the mounting surface of the power semiconductor element 1 on the heat sink 4, the contact thermal resistance between the power semiconductor element 1 and the heat sink 4 can be reduced, and further, the radiant heat radiated from the heat sink 4 can be reduced. it can. Therefore, the effect which prevents the temperature rise of each component inside the casing 3 is also acquired.

Embodiment 2. FIG.
3 and 4 show a power conversion device 200 according to the second embodiment configured by connecting a plurality of power semiconductor devices 101 according to the first embodiment.
The power conversion device 200-1 shown in FIG. 3 includes a plurality of power semiconductor devices 101 and one control device 210, and each power semiconductor device 101 has the heat sink 4 oriented on one side in the X direction. Arranged in parallel in the Y direction, the control device 210 is arranged on one side in the Y direction, and a horizontal plate 220 is arranged on the other side in the Y direction.
The control device 210 is a device that controls each power semiconductor device 101, and includes a display / operation device 212 and an external connection terminal 214. The external connection terminal 214 may be a terminal block or a connector.
Each power semiconductor device 101, and the power semiconductor device 101 and the control device 210 are electrically connected in parallel by a connection member such as a connector, a bus bar, or a wire harness.

  Further, as in the power conversion device 200-2 shown in FIG. 4, the power semiconductor devices 101 may be arranged in parallel without gaps, in which the heat sinks 4 are coupled to each other through the heat sink joints 230 so as to conduct heat. Good. As the heat sink joint 230, for example, a heat radiating member such as a heat radiating grease or a heat radiating sheet is used. Moreover, the adjacent heat sinks 4 may be firmly coupled by caulking or the like.

  According to the power conversion device 200 in the second embodiment, each power semiconductor device 101 has the effect described in the first embodiment, and the power conversion device 200 can be obtained only by increasing or decreasing the number of power semiconductor devices 101. The power that can be converted can be increased or decreased.

Each power semiconductor device 101 has the same configuration and is symmetrical in structure. Therefore, even when the power semiconductor devices 101 are arranged adjacent to each other, uniform cooling is achieved by the chimney effect described above. On the other hand, there may be a difference in power to be converted between the power semiconductor devices 101 due to variations in temperature characteristics of the parallel power semiconductor devices 101 or parasitic impedances of the circuits. In such a case, there is a possibility that the power to be converted in a certain power semiconductor device 101 is biased and the heat generation amount increases, and the product life of the power semiconductor device 101 is shortened.
In this case, as in the power conversion device 200-2 shown in FIG. 4, the adjacent heat sinks 4 are coupled through the heat sink joint 230 so as to be capable of conducting heat, thereby balancing the temperatures between the heat sinks 4. Thereby, it is possible to suppress the conversion power from being biased to any of the power semiconductor devices 101. As a result, the life of the power conversion device 200 can be extended and the reliability can be improved.

  Although power semiconductor device 101 is used in power conversion device 200 according to the second embodiment, power conversion device using power semiconductor devices 103 and 104 according to the third and fourth embodiments, which will be further described below. Can also be configured.

Embodiment 3 FIG.
5A and 5B show power semiconductor device 103 in the third embodiment, which corresponds to a modification of power semiconductor device 101 in the first embodiment. 5A and 5B, the casing 3 and the fan 5 are not shown in order to simplify the illustration and facilitate understanding.
In the power semiconductor device 101 in the first embodiment, the main circuit board 21 and the control circuit board 22 and the heat sink 4 are not connected, but in the power semiconductor device 103 in the third embodiment, the main circuit board 21 and the control circuit are connected. The board | substrate 22 and the heat sink 4 are connected with the screw | thread 112 corresponded to one component which comprises a fastening part. Only in this respect, the power semiconductor device 103 is different from the power semiconductor device 101.

  In order to connect the main circuit board 21 and the control circuit board 22 and the heat sink 4, the main circuit board 21 and the control circuit board 22 are provided with convex portions 24 at both ends in the Z direction on one end side in the X direction. The portion 24 is provided with a hole 25 for the screw 112. On the other hand, the heat sink 4 has concave portions 43 at two locations corresponding to the convex portions 111. Further, the heat sink 4 has a female screw for the screw 112 in each recess 43.

  As described in the first embodiment, the heat sink 4 has a width dimension larger than the facing distance between the main circuit board 21 and the control circuit board 22 in order to improve the cooling effect. The convex part 24 and the recessed part 43 are formed corresponding to this form. Therefore, when the width dimension of the heat sink 4 is smaller than the facing distance, for example, one end side in the X direction of the main circuit board 21 and the control circuit board 22 is formed on the heat sink 4 without forming the convex portions 24 and the concave portions 43. You may join to.

According to power semiconductor device 103 in the third embodiment, in addition to the effects achieved by power semiconductor device 101 in the first embodiment, the following effects are further obtained.
First, the main circuit board 21 and the control circuit board 22 are screwed to the heat sink 4 so that the vibration resistance of the main circuit board 21 and the control circuit board 22 can be improved.

  Further, since the main circuit board 21 and the control circuit board 22 are joined to the heat sink 4, the main circuit board 21 and the control circuit board 22 themselves can be cooled by the heat sink 4. Thereby, it is possible to reduce the cooling burden ratio of the components due to the chimney effect described in the first embodiment, and to prevent or reduce the temperature rise of components such as the capacitors 6a and 6b existing in the airflow passage 7. Can do. As a result, it is possible to extend the life of components such as the capacitors 6a and 6b, and to improve the product reliability in the power semiconductor device 103.

Further, by arranging the wiring pattern on each board in the holes 25 for the screws 112 on the main circuit board 21 and the control circuit board 22, the main circuit board 21, the control circuit board 22, and the like are connected via the screws 112 and the heat sink 4. Can also be electrically connected. Thereby, for example, the ground potential can be shared between the main circuit board 21 and the control circuit board 22.
The heat sink is generally made of aluminum and has a low impedance, and can be configured to pass a current of 50 A or more.

  In the third embodiment, the fastening portion that joins the main circuit board 21 and the control circuit board 22 and the heat sink 4 is configured using the screw 112, the convex portion 24, the concave portion 43, etc., but is not limited to this configuration. In general, a configuration applicable for joining two members can be used. In the third embodiment, both the main circuit board 21 and the control circuit board 22 are mechanically and electrically connected to the heat sink 4, but only one of them is mechanically and electrically connected to the heat sink 4. May be.

Embodiment 4 FIG.
6A and 6B are diagrams showing power semiconductor device 104 in the fourth embodiment, which corresponds to a modification of power semiconductor device 103 in the third embodiment. 6A and 6B, the casing 3 and the fan 5 are not shown in order to simplify the illustration and facilitate understanding.
In the power semiconductor device 103 according to the third embodiment, the main circuit board 21 and the control circuit board 22 are connected to the heat sink 4 by providing the convex portions 24, but do not extend to the fins 41. On the other hand, in the power semiconductor device 104 of the fourth embodiment, the main circuit board 21 and the control circuit board 22 extend beyond the heat sink 4 to a position corresponding to the tip 41a of the fin 41 in the X direction. Yes. Only in this respect, the power semiconductor device 104 is different from the power semiconductor device 103.

  More specifically, the main circuit board 21 and the control circuit board 22 each have an extended portion 26 that extends to the position of the tip end portion 41 a of the fin 41 via the convex portion 24. As shown in the drawing, the extended portion 26 has the same shape as the fin 41 in the X and Z directions. Therefore, each expansion part 26 of the main circuit board 21 and the control circuit board 22 has an airflow passage 8 extending in the vertical direction (Z direction) between each of the fins 41-1 adjacent to each expansion part 26. Form.

According to power semiconductor device 104 in the fourth embodiment having the above-described configuration, in addition to the effects exhibited by power semiconductor device 103 in the third embodiment, the following effects are further obtained.
In the configuration of power semiconductor device 103 in the third embodiment, when the heat sink 4 is forcibly air-cooled by fan 5, among fins 41 of heat sink 4, two fins 41-1 positioned on the outermost side in the Y direction face each other. On the outer surface 41b where no fins are present, no airflow passage is formed and natural air cooling is performed.

  On the other hand, in the power semiconductor device 104 in the fourth embodiment, the air flow passage 8 is also formed between the outer surface 41b of the fin 41-1 and the extended portion 26 by including the extended portion 26. Thereby, the cooling performance of the heat sink 4 can be further improved.

For example, as illustrated in FIG. 6B, the circuit components 9 a and 9 b are mounted on the airflow passage 8 by mounting the circuit components 9 a and 9 b on the expansion portion 26 of the control circuit board 22 so as to contact the outer surface 41 b of the fin 41-1. It can be arranged and can be air-cooled.
Furthermore, the circuit components 9a and 9b can be cooled more efficiently by filling, for example, a heat-dissipating resin between the fin 41-1 and the extended portion 26.

  In FIG. 6B, the circuit components 9a and 9b are shown only in the extension portion 26 of the control circuit board 22. However, the extension portion 26 of the main circuit board 21 is similarly forced into the gap with the fin 41-1. Circuit components that are air-cooled may be mounted.

  It is also possible to adopt a configuration in which the above-described embodiments are combined, and it is also possible to combine components shown in different embodiments.

1 power semiconductor element, 1a, 1b main surface, 1c, 1d peripheral edge,
3 Casing, 4 Heat sink, 5 Fan, 7, 8 Airflow passage,
11 terminal for main circuit, 12 terminal for control circuit, 21 main circuit board,
22 control circuit board, 26 expansion part, 36 opening, 41 fin,
101-104 power semiconductor device,
200-1, 200-2 power conversion device,
210 controller, 230 heat sink joint.

Claims (7)

A first substrate and a second substrate facing each other and extending in a vertical direction;
A power semiconductor element disposed perpendicular to each of the first substrate and the second substrate and sandwiched between the first substrate and the second substrate;
A power semiconductor device comprising:
The power semiconductor element has a main circuit terminal bonded to the first substrate at one peripheral portion facing each other at the peripheral portion of the main surface, and bonded to the second substrate at the other peripheral portion. Having a control circuit terminal,
The first substrate and the second substrate are passage wall portions of an airflow flowing from the bottom to the top in the vertical direction with respect to the power semiconductor element.
A power semiconductor device.   A casing made of a plate material, extending vertically with respect to each of the first substrate and the second substrate and arranged at least on the upper side in the vertical direction, and housing the power semiconductor element therein, The power semiconductor device according to claim 1, further comprising a casing having an opening that penetrates the casing in a vertical direction and allows an air flow to pass therethrough.   The power semiconductor device according to claim 1, further comprising a heat sink attached to one main surface of the power semiconductor element, wherein the main surface is oriented along a vertical direction.   The power semiconductor device according to claim 3, wherein at least one of the first substrate and the second substrate is mechanically and electrically connected to the heat sink.   The first substrate and the second substrate are mechanically connected to the heat sink, and extend to form an airflow path between the first substrate and the second substrate and the fins extending beyond the heat sink and standing on the heat sink. The power semiconductor device according to claim 3, comprising:   The power semiconductor device according to claim 3, further comprising a cooling device that performs forced cooling of the heat sink. The power semiconductor device according to any one of claims 3 to 6,
A control device that is electrically connected to the power semiconductor device and controls the power semiconductor device;
A plurality of the power semiconductor devices are provided, and a joint that is located between the heat sinks in each power semiconductor device and couples the heat sinks to each other so as to be able to conduct heat, and
A power conversion device comprising:

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