JP2018157187A - Wiring board and wiring board manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wiring board manufactured by a thin substrate without deteriorating electrical characteristics; and provide a manufacturing method for the wiring board.SOLUTION: A wiring board manufacturing method comprises the steps of: bonding a protection member via an adhesive to a second surface of a substrate 110 which has a first surface 110A and a second surface 110B opposite to the first surface and where a through hole 115 penetrating from the first surface to the second surface and a through electrode 120 in the through hole are provided; forming an insulation layer 130 on the first surface of the substrate; forming, in the insulation layer, an opening 131 for exposing the through electrode; forming wiring 140 on the insulation layer so as to be brought into contact with the through electrode; separating the substrate and the protection member by first heat treatment; and curing the insulation layer by second heat treatment at a higher temperature than that of the first heat treatment.SELECTED DRAWING: Figure 1

Description

  The present disclosure relates to a wiring board and a manufacturing method of the wiring board.

  In order to reduce the size, thickness and density of electronic components, a three-dimensional mounting technique in which high-frequency elements such as semiconductor elements including integrated circuits and RF (Radio Frequency) elements are vertically stacked is widely used. . In this technique, a through electrode is used. Thereby, the semiconductor element and the RF element are electrically connected on both sides of the substrate. On the other hand, as electronic components are miniaturized and substrates on which electronic components are mounted are thinner, it is difficult to fix the substrates when manufacturing electronic components. Therefore, Patent Document 1 discloses a technique for temporarily fixing a substrate to a support via an adhesive.

JP 2014-183131 A

  However, when the support is peeled from the substrate after completion of the process, when an adhesive material that is softened by heat and has viscosity is used, an adhesive residue may adhere to the substrate. The residue may affect the conduction characteristics between the wirings. Alternatively, depending on the nature of the adhesive, the support may be peeled off from the substrate during the process.

  Alternatively, when the adhesive is peeled off after the heat treatment for the insulating layer, a heat treatment at a higher temperature than the curing treatment is required. For this reason, an insulating layer deteriorates with a heat | fever. Note that deterioration due to heat means that a chemical bond in an insulating layer (for example, an organic resin) is broken or the insulating layer is altered. When the insulating layer is deteriorated, the electrical characteristics (for example, insulation resistance) of the insulating layer may be reduced.

  In view of such a problem, one of the objects in the embodiment of the present disclosure is to provide a wiring board manufactured using a thin board without deteriorating electrical characteristics.

  According to an embodiment of the present disclosure, the first surface and the second surface opposite to the first surface have a through hole penetrating the first surface and the second surface, and the through electrode is provided in the through hole. A protective member is bonded to the second surface of the substrate with an adhesive, an insulating layer is formed on the first surface of the substrate, an opening is formed in the insulating layer to expose the through electrode, and the insulating layer is penetrated. There is provided a method for manufacturing a wiring board in which a wiring is formed so as to be in contact with an electrode, the substrate and the protective member are peeled off by a first heat treatment, and the insulating layer is hardened by a second heat treatment higher than the first heat treatment.

  In the method for manufacturing a wiring substrate, the adhesive may include a thermal expansion material, and the protective member may be peeled off from the substrate by a first heat treatment.

  In the method for manufacturing a wiring board, the temperature of the first heat treatment may be 150 ° C. or more and 200 ° C. or less, and the temperature of the second heat treatment may be 200 ° C. or more and 300 ° C. or less.

  In the above method for manufacturing a wiring substrate, the thickness of the substrate may be not less than 100 μm and not more than 500 μm, and the diameter of the through hole may be not more than 100 μm.

  In the method for manufacturing a wiring board, the substrate may be a glass substrate.

  In the method for manufacturing a wiring board, the first surface of the substrate and another protective member are bonded via another adhesive, and at least one of the other wiring and the other insulating layer on the second surface of the substrate. You may form.

  In the method for manufacturing a wiring board, a second insulating layer is further formed on the second surface of the substrate, a second opening is formed in the second insulating layer to expose the through electrode, and the temperature is higher than that of the first heat treatment. By the second heat treatment, the insulating layer and the second insulating layer are cured, a resist film is formed on the insulating layer so as to have a predetermined shape, and the first electrode is formed on the through electrode and the insulating layer on the first surface side of the substrate. A wiring may be formed, and the second wiring may be formed on the through electrode and the second insulating layer on the second surface side of the substrate using a resist.

  In the above method for manufacturing a wiring board, another protective member is bonded to the second insulating layer via another adhesive to form the first wiring, and then the substrate and the other protective member are bonded by another first heat treatment. It may be peeled off.

  In the method for manufacturing a wiring board, the film thickness of the insulating layer and the film thickness of the second insulating layer may be not less than 3 μm and not more than 30 μm.

  In the above method for manufacturing a wiring substrate, the distance from the upper surface of the insulating layer to the upper surface of the first wiring may be smaller than the distance from the upper surface of the insulating layer to the upper surface of the resist film.

  In the method for manufacturing a wiring board, the thickness of the resist film may be not less than 5 μm and not more than 30 μm.

  According to an embodiment of the present disclosure, the first surface and the second surface opposite to the first surface have a through hole penetrating the first surface and the second surface, and the through electrode is provided in the through hole. Including a substrate and one or more wirings and one or more insulating layers provided on at least one of the first surface and the second surface, and the thickness of the substrate is not less than 100 μm and not more than 500 μm. A wiring board having a hole diameter of 100 μm or less is provided.

  In the wiring board, the substrate may be a glass substrate.

  In the wiring board, the film thickness of the one or more insulating layers may be 3 μm or more and 20 μm or less.

  The wiring board includes an adhesive that includes a thermal expansion material on at least one of the first surface and the second surface, the peel strength of which is reduced by heat of a predetermined temperature or more, and a protective member that contacts the adhesive. May be.

  According to an embodiment of the present disclosure, a semiconductor device including the wiring board and an integrated circuit electrically connected to the wiring board is provided.

  According to an embodiment of the present disclosure, it is possible to stably provide a wiring board manufactured using a thin board without degrading electrical characteristics.

It is sectional drawing explaining the wiring board which concerns on 1st Embodiment of this indication. 5 is a cross-sectional view illustrating the method for manufacturing the wiring board according to the first embodiment of the present disclosure. FIG. 5 is a cross-sectional view illustrating the method for manufacturing the wiring board according to the first embodiment of the present disclosure. FIG. 5 is a cross-sectional view illustrating the method for manufacturing the wiring board according to the first embodiment of the present disclosure. FIG. 5 is a cross-sectional view illustrating the method for manufacturing the wiring board according to the first embodiment of the present disclosure. FIG. 5 is a cross-sectional view illustrating the method for manufacturing the wiring board according to the first embodiment of the present disclosure. FIG. It is the graph which showed the ultimate temperature in each process concerning a 1st embodiment of this indication. 5 is a cross-sectional view illustrating the method for manufacturing the wiring board according to the first embodiment of the present disclosure. FIG. 5 is a cross-sectional view illustrating the method for manufacturing the wiring board according to the first embodiment of the present disclosure. FIG. 5 is a cross-sectional view illustrating the method for manufacturing the wiring board according to the first embodiment of the present disclosure. FIG. 5 is a cross-sectional view illustrating the method for manufacturing the wiring board according to the first embodiment of the present disclosure. FIG. It is sectional drawing explaining the manufacturing method of the wiring board which concerns on 2nd Embodiment of this indication. It is sectional drawing explaining the manufacturing method of the wiring board which concerns on 2nd Embodiment of this indication. It is sectional drawing explaining the manufacturing method of the wiring board which concerns on 2nd Embodiment of this indication. It is sectional drawing explaining the manufacturing method of the wiring board which concerns on 2nd Embodiment of this indication. It is sectional drawing explaining the manufacturing method of the wiring board which concerns on 2nd Embodiment of this indication. It is sectional drawing explaining the manufacturing method of the wiring board which concerns on 2nd Embodiment of this indication. It is sectional drawing explaining the manufacturing method of the wiring board which concerns on 3rd Embodiment of this indication. It is sectional drawing explaining the manufacturing method of the wiring board which concerns on 3rd Embodiment of this indication. It is sectional drawing explaining the manufacturing method of the wiring board which concerns on 3rd Embodiment of this indication. It is sectional drawing explaining the manufacturing method of the wiring board which concerns on 3rd Embodiment of this indication. It is sectional drawing explaining the manufacturing method of the wiring board which concerns on 3rd Embodiment of this indication. It is sectional drawing explaining the manufacturing method of the wiring board which concerns on 3rd Embodiment of this indication. It is sectional drawing explaining the manufacturing method of the wiring board which concerns on 3rd Embodiment of this indication. It is a sectional view explaining a semiconductor device containing a circuit element concerning one embodiment of this indication. It is a perspective view explaining the electric equipment containing the semiconductor device concerning one embodiment of this indication. 6 is a cross-sectional view illustrating a modification of the wiring board according to the first embodiment of the present disclosure. FIG. 6 is a cross-sectional view illustrating a modification of the wiring board according to the first embodiment of the present disclosure. FIG. 6 is a cross-sectional view illustrating a modification of the wiring board according to the first embodiment of the present disclosure. FIG. 6 is a cross-sectional view illustrating a modification of the wiring board according to the first embodiment of the present disclosure. FIG.

  Hereinafter, a wiring board and the like according to each embodiment of the present disclosure will be described in detail with reference to the drawings. In addition, each embodiment shown below is an example of embodiment of this indication, Comprising: This indication is limited to these embodiment and is not interpreted. Note that in the drawings referred to in this embodiment, the same portion or a portion having a similar function is denoted by the same reference symbol or a similar reference symbol (a reference number simply including xxx-1, xxx-2, etc. after a number). However, the repeated description may be omitted. In addition, the dimensional ratio in the drawing may be different from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

<First Embodiment>
(1-1. Configuration of wiring board)
FIG. 1 shows a cross-sectional view of the wiring board 100. As shown in FIG. 1, the wiring substrate 100 includes a substrate 110, a through hole 115, a through electrode 120, an insulating layer 130, a wiring 140, an insulating layer 150, a bump electrode 160, an insulating layer 230, a wiring 240, an insulating layer 250, and a bump. An electrode 260 is included.

  The substrate 110 has a first surface 110A and a second surface 110B opposite to the first surface 110A. The substrate 110 is provided with a through hole 115. Note that the through-hole 115 when viewed from above may have a circular shape. The diameter of the through hole 115 at this time is appropriately set in a range of 30 μm or more and less than 200 μm.

  A high resistance material is used for the substrate 110. In this example, an alkali-free glass substrate is used as the substrate 110.

  The thickness of the substrate 110 is appropriately set in the range of 100 μm to 500 μm. For example, 300 μm is used as the thickness of the substrate 110. Note that the diameter of the through hole 115 of the substrate 110 is desirably 100 μm or less.

  The through electrode 120 is disposed on the side wall portion of the through hole 115, the first surface 110 </ b> A and the second surface 110 </ b> B of the substrate 110 together with the seed layer 125. A low resistance material is used for the through electrode 120. In this example, copper (Cu) is used for the seed layer 125 and the through electrode 120. The through electrode 120 is not limited to copper, and a material including gold (Au), silver (Ag), nickel (Ni), or tin (Sn) may be used. Note that a resin 117 may be provided in the gap of the through hole 115. Note that a part of the through electrode 120 (electrode 121) may be disposed only on the substrate 110 (first surface or second surface) without being disposed on the side wall of the through hole 115.

  The insulating layer 130 is provided on the first surface 110 </ b> A of the substrate 110 and the through electrode 120. The insulating layer 130 has an opening 131 on the through electrode 120. In this example, a polyimide resin is used for the insulating layer 130. Note that the insulating layer 130 may be formed of an inorganic insulating material such as a silicon oxide film or a silicon nitride film, or an organic insulating material such as an acrylic resin or an epoxy resin.

  The wiring 140 is provided on the upper surface of the insulating layer 130 and the opening 131. A part of the wiring 140 is in contact with the through electrode 120. A material similar to that of the through electrode 120 is used for the wiring 140.

  The insulating layer 150 is provided over the insulating layer 130 and the wiring 140. The same material as the insulating layer 130 is used for the insulating layer 150.

  The bump electrode 160 is provided on the opening 155 and the wiring 140. The bump electrode 160 and the wiring 140 are electrically connected. In this example, the bump electrode 160 is a laminated film of nickel (Ni), palladium (Pd), and gold (Au). The bump electrode 160 may be made of copper (Cu), silver (Ag), tin (Sn), or other metal materials.

  The insulating layer 230 is provided on the second surface 110 </ b> B of the substrate 110 and the through electrode 120. The insulating layer 230 has an opening 231 on the through electrode 120. In this example, the same material as the insulating layer 130 may be used for the insulating layer 230.

  The wiring 240 is provided on the upper surface of the insulating layer 230 and the opening portion 231. A part of the wiring 240 is in contact with the through electrode 120. A material similar to that of the through electrode 120 may be used for the wiring 240.

  The insulating layer 250 is provided over the insulating layer 230 and the wiring 240. The same material as that of the insulating layer 230 may be used for the insulating layer 250.

  The bump electrode 260 is provided on the opening 255 and the wiring 240. The bump electrode 260 and the wiring 240 are electrically connected. A material similar to that of the bump electrode 160 may be used for the bump electrode 260.

(1-2. Manufacturing method of wiring board)
Next, a method for manufacturing the wiring substrate 100 shown in FIG. 1 will be described with reference to FIGS.

  First, as shown in FIG. 2, a substrate 110 having a first surface 110A and a second surface 110B opposite to the first surface 110A and provided with a through hole 115 and a through electrode 120 is used. In this example, an alkali-free glass substrate is used as the substrate 110.

  In this example, the through hole 115 is formed by using a laser irradiation method (which can be called a laser ablation method) on the substrate 110. As the laser, an excimer laser, a neodymium: yag laser (Nd: YAG) laser, a femtosecond laser, or the like is used. When an excimer laser is used, light in the ultraviolet region is irradiated. For example, when xenon chloride is used in an excimer laser, light having a wavelength of 308 nm is irradiated. In addition, the irradiation diameter by a laser is good also as 20 micrometers or more and less than 250 micrometers. The diameter of the through hole 115 can be appropriately changed within a range of 30 μm or more and less than 200 μm. By using the above method, the through hole 115 has a circular shape when viewed from above.

  The formation of the through hole 115 is not limited to the laser irradiation method, and a dry etching method such as a reactive ion etching method or a deep reactive ion etching method, a wet etching method, or a laser irradiation method may be used. And a wet etching method may be used in combination. For example, when wet-etching a non-alkali glass substrate, hydrofluoric acid is used.

  The through electrode 120 may be formed by an electrolytic plating method or an electroless plating method. In this example, first, a seed layer 125 is formed on the first surface 110 </ b> A, the second surface 110 </ b> B, and the through hole 115 of the substrate 110. The seed layer 125 is formed by a sputtering method. The seed layer 125 includes copper (Cu). The seed layer 125 may be made of nickel (Ni) or gold (Au) as a material other than copper (Cu). Next, a resist film is formed on the seed layer 125. As the resist film, a coated film may be used, or a dry film resist may be used. The resist film is processed into a predetermined shape by photolithography. Next, the through electrode 120 is formed on the exposed seed layer 125. As the through electrode 120, a copper (Cu) film is formed by an electrolytic plating method. The copper film at this time is conformally plated. Next, the resist film is removed, and the seed layer 125 provided under the resist film is removed. The seed layer 125 is removed by a wet etching method.

  Next, as illustrated in FIG. 3, the protective member 320 is bonded to the second surface 110 </ b> B of the substrate 110 with an adhesive 310. The bonding temperature is room temperature in this example. As the adhesive 310, an adhesive whose adhesive strength decreases as the temperature increases is used. For example, an adhesive 310 containing a thermal expansion material 311 is applied. The thermal expansion material 311 has a function of expanding and expanding when heat of a predetermined temperature or higher is applied. Since the contact area with the board | substrate 110 falls because the thermal expansion material 311 expand | swells, the adhesive force 310 falls as a result. The protection member 320 has a function of protecting the substrate 110. In this example, a non-alkali glass substrate having the same thickness as the substrate 110 is used as the protective member 320. The protective member 320 is not limited to an alkali-free glass substrate, and a stainless steel (SUS) substrate, a silicon substrate, a sapphire substrate, or an organic resin substrate may be used. In addition, the thickness of the protective member may be appropriately selected depending on the required strength and device restrictions of the process.

  Next, as illustrated in FIG. 4, the insulating layer 130 is formed on the first surface 110 </ b> A of the substrate 110 and the through electrode 120. The insulating layer 130 is formed using a printing method, a coating method, or a dipping method. In this example, a polyimide resin provided in a spin coating method is used for the insulating layer 130. Note that the insulating layer 130 is not limited to a polyimide resin, and an organic resin such as acrylic, epoxy, or benzocyclobutene (BCB) may be used. In addition to the organic resin, the insulating layer 130 may be an organic-inorganic hybrid resin containing silica, or an inorganic film such as silicon oxide or silicon nitride formed by a plasma CVD method. In addition, the opening 131 is formed in the insulating layer 130 by a photolithography method or the like. Note that heat treatment may be performed to remove the solvent in the insulating layer 130 when the insulating layer 130 is formed.

  Next, as shown in FIG. 5, a first heat treatment 133 is performed. By the first heat treatment 133, the thermal expansion material 311 expands and foams. At this time, the contact area between the substrate 110 and the adhesive 310 is reduced. Thereby, since the adhesive force of the board | substrate 110 and the adhesive material 310 falls, the protection member 320 peels. Note that the adhesive 310 may be foamed in the vicinity of the substrate 110. Thereby, the residue of the adhesive 310 is prevented from adhering to the surface of the substrate 110.

  Next, as shown in FIG. 6, a second heat treatment 135 is performed. By the second heat treatment 135, the residual solvent component and the remaining starting material in the insulating layer 130 are removed, or chemical bonding occurs in the insulating layer 130, and the insulating layer 130 is cured.

  FIG. 7 is a graph 330 showing the reached temperature in each step. In the graph 330, the interval between T1 and T2 corresponds to the step of attaching the protective member 320, and the ultimate temperature is Temp320. The period between T3 and T4 corresponds to the step of forming the insulating layer 130, and the ultimate temperature is Temp130. Between T5 and T6 corresponds to a step of peeling the protective member 320 by the first heat treatment 133, and the ultimate temperature is Temp133. A period between T7 and T8 corresponds to a step of curing the insulating layer 130 by the second heat treatment, and the ultimate temperature is Temp135. As shown in FIG. 7, the ultimate temperature increases with each step, and Temp 135 is higher than Temp 133. In this example, Temp 130 is room temperature or higher and lower than 150 ° C. Moreover, Temp133 is 150 degreeC or more and 200 degrees C or less. Moreover, Temp135 is 200 degreeC or more and 300 degrees C or less. By setting the temperature as described above, the substrate 110 is protected without peeling off the protective member 320 if the temperature of the protective member 320 is lower than Temp 133. Thereby, it is suppressed that the board | substrate 110 breaks during a process. Alternatively, the warpage of the substrate 110 is suppressed, and suction abnormality and alignment abnormality in the manufacturing apparatus are prevented.

  In addition, since Temp 133 is lower than Temp 135, deterioration of the insulating layer 130 due to heat can be suppressed. That is, it is possible to suppress a decrease in electrical characteristics (for example, insulation resistance) of the wiring board 100.

  Next, as illustrated in FIG. 8, the protective member 320-1 is bonded to the second surface 110 </ b> B of the substrate 110 via the adhesive 310-1 to form the wiring 140, the insulating layer 150, and the opening portion 155. After forming the wiring 140, the insulating layer 150, and the opening portion 155, the protective member 320-1 is peeled off by performing a heat treatment similar to the first heat treatment 133. After the protective member 320 is peeled off, the insulating layer 150 is cured by performing a heat treatment similar to the second heat treatment 135.

  Next, as shown in FIG. 9, the bump electrode 160 is formed in the opening 155. For the bump electrode 160, for example, a laminated film of nickel, palladium and gold formed by an electroless plating method is used. The protective member 320 may also be provided when forming the bump electrode 160.

  Next, as shown in FIG. 10, protection is performed via an adhesive 310-2 including a thermal expansion material 311-2 on the first surface 110A side of the substrate 110 on which the insulating layer 130, the wiring 140, and the insulating layer 150 are formed. The member 320-2 is bonded.

  Next, as illustrated in FIG. 11, the insulating layer 230 is formed on the second surface 110 </ b> B of the substrate 110 and the through electrode 120. In addition, an opening 231 is formed on the through electrode 120. At this time, since the first surface 110A of the substrate 110 is protected by the adhesive 310-2 and the protective member 320-2, the substrate 110 is provided even if the insulating layer 130, the wiring 140, and the insulating layer 150 are provided. It is possible to prevent scratches or chips from entering the first surface. Further, the protective member 320 can also prevent the first surface 110A side of the substrate 110 from becoming dirty. After the insulating layer 230 is formed, the protective member 320 is appropriately subjected to heat treatment similar to the first heat treatment 133 and is peeled off. Further, after the protective member 320 is peeled off, a heat treatment similar to the second heat treatment 135 is appropriately performed, and the insulating layer 230 is cured.

  The wiring 240 is formed in the same manner as the wiring 140. The insulating layer 250 and the opening portion 255 are formed in the same manner as the insulating layer 150 and the opening portion 155. The bump electrode 260 is formed in the same manner as the bump electrode 160. In the above process, the protective member 320 is appropriately bonded to the first surface 110A of the substrate 110, thereby protecting the substrate 110.

  The wiring board 100 is manufactured as described above. By using the above manufacturing method, even if a glass substrate having a particularly low strength is used as the thin substrate 110, cracking or warping of the substrate 110 can be suppressed during the process. Further, the diameter of the through hole 115 can be further reduced by reducing the thickness of the substrate 110. Thereby, a smaller and thinner wiring board can be manufactured. By using a small and thin wiring board, the electronic component can be further downsized. In the case of the above manufacturing method, the adhesive 310 is thermally expanded and foamed. Thereby, the board | substrate 110 and the protection member 320 peel. At this time, the residue of the adhesive 310 is prevented from adhering to the substrate like a viscous adhesive that is softened by heat. For this reason, it is possible to suppress defects in electrical characteristics such as a short-circuit failure between wirings and a wiring failure. Further, by using the above manufacturing method, the influence of the stress of the film formed even on a thin substrate can be mitigated, and the warpage of the substrate during the process can be suppressed. Accordingly, it is possible to suppress substrate adsorption abnormality or alignment abnormality in the manufacturing apparatus.

Second Embodiment
Next, a different manufacturing method of the wiring board 100 will be described with reference to FIGS. In addition, about the structure, material, and method which were shown in 1st Embodiment, the description is used.

  First, a substrate 110 having a first surface 110A and a second surface 110B opposite to the first surface 110A and provided with a through hole 115 and a through electrode 120 is used. Next, the protective member 320-3 is bonded to the second surface 110B of the substrate 110 via the adhesive 310-3. Next, the insulating layer 130 is formed on the first surface 110 </ b> A of the substrate 110 and the through electrode 120. Further, the opening 131 is formed in the insulating layer 130 by a photolithography method. Next, a first heat treatment 133-1 is performed (see FIG. 12). The protective member 320-3 is peeled off by the first heat treatment 133-1.

  Next, as illustrated in FIG. 13, the protective member 320-4 is bonded to the first surface 110 </ b> A of the substrate 110 on which the insulating layer 130 is formed via an adhesive 310-4.

  Next, as shown in FIG. 14, an insulating layer 230 and an opening 231 are formed on the second surface 110B of the substrate. After forming the insulating layer 230 and the opening 231, the first heat treatment 133-2 is performed to peel off the protective member 320-4.

  Next, as shown in FIG. 15, the second heat treatment 135-1 is performed. The insulating layer 130 and the insulating layer 230 are simultaneously cured by the second heat treatment 135-1.

  Next, as illustrated in FIG. 16, the protective member 320-5 is bonded to the second surface 110 </ b> B of the substrate 110 through an adhesive 310-5 including the thermal expansion material 311-5. After the protective member 320-5 is attached, the wiring 140 is formed over the insulating layer 130 and the through electrode 120. Next, the 1st heat processing 133-3 is performed. The protective member 320-5 is peeled off by the first heat treatment 133-3.

  Next, as illustrated in FIG. 17, the protective member 320-6 is bonded to the first surface 110 </ b> A of the substrate 110 via the adhesive 310-6 including the thermal expansion material 311-6. After the protective member 320-6 is attached, the wiring 240 is formed. Next, a first heat treatment 133-4 is performed. The protective member 320-6 is peeled off by the first heat treatment 133-4.

  Subsequently, the insulating layer 150, the insulating layer 250, the bump electrode 160, and the bump electrode 260 are sequentially formed. Note that the second heat treatment 135 (not illustrated) is performed on the insulating layer 150 and the insulating layer 250 at the same time.

  By using the above manufacturing method, the wiring substrate 100 can be manufactured while preventing the substrate 110 from being cracked during the process even when the thin substrate 110 is used. Further, even when the process time required for curing the insulating layer 130, the insulating layer 150, the insulating layer 230, and the insulating layer 250 is longer than the other processes, the curing time is halved by using the above manufacturing method. It can be shortened.

<Third Embodiment>
Next, a method for manufacturing the wiring board 100 different from the first embodiment and the second embodiment will be described with reference to FIGS. In addition, about the structure, material, and method shown in 1st Embodiment and 2nd Embodiment, the description is used.

  First, a substrate 110 having a first surface 110A and a second surface 110B opposite to the first surface 110A and provided with a through hole 115 and a through electrode 120 is used. Next, the protective member 320-7 is bonded to the second surface 110B of the substrate 110 via an adhesive 310-7 including a thermal expansion material 311-7.

  Next, the insulating layer 130 is formed on the first surface 110 </ b> A of the substrate 110 and the through electrode 120. At this time, the thickness of the insulating layer 130 is preferably 3 μm or more and 30 μm or less, more preferably 10 μm or more and 20 μm or less. In addition, the opening 131 is formed in the insulating layer 130. The opening 131 may be formed by a photolithography method. At this time, the diameter of the opening 131 may be 5 μm or more and 20 μm or less. Next, a first heat treatment 133-5 similar to the first heat treatment 133 is performed (see FIG. 18). The protective member 320-7 is peeled off by the first heat treatment 133-5.

  Next, as illustrated in FIG. 19, the insulating layer 230 and the opening 231 are formed on the second surface 110 </ b> B of the substrate 110. Note that the protective member 320 may not be provided on the first surface 110 </ b> A side of the substrate 110. As described above, the insulating layer 130 has a large film thickness and rigidity. Therefore, the insulating layer 130 can function as a substitute for the protective member 320.

  Next, as shown in FIG. 20, the second heat treatment 135-2 is performed. The insulating layer 130 and the insulating layer 230 are simultaneously cured by the second heat treatment 135-2.

  Note that although the example in which the insulating layer 130 and the insulating layer 230 are simultaneously cured by the second heat treatment 135-2 is shown above, the second heat treatment 135-2 is separately performed on the insulating layer 130 and the insulating layer 230. May be. In this case, the first heat treatment 133-5 and the second heat treatment 135-2 may be successively performed on the insulating layer 130. Thereby, the strength or rigidity of the insulating layer 130 can be increased.

  Next, as illustrated in FIG. 21, the protective member 320-8 is bonded to the second surface 110 </ b> B of the substrate 110 via an adhesive 310-8 including the thermal expansion material 311-8. After the protective member 320-8 is attached, the wiring 140 is formed on the insulating layer 130 and the through electrode 120.

  The wiring 140 is formed by a semi-additive method. First, as shown in FIG. 21, a seed layer 141 is formed on the insulating layer 130 and the through electrode 120. Next, as shown in FIG. 22, a resist film 139 is formed and processed into a predetermined shape by photolithography. Next, as shown in FIG. 23, a wiring 140 is formed on the exposed seed layer 141. At this time, the distance L140 from the upper surface 130A of the insulating layer 130 to the upper surface 140A of the wiring 140 is smaller than the distance L139 from the upper surface 130A of the insulating layer 130 to the upper surface 139A of the resist film 139 (the upper surface of the wiring 140 is the resist (It may be said that it is retracted from the upper surface of the film 139). Specifically, the distance L139 (refers to the film thickness of the resist film 139 including the film thickness of the seed layer 141. Note that since the film thickness of the seed layer 141 is much smaller than the film thickness of the resist film 139, the resist film The film thickness of only 139 may be 5 μm or more and 30 μm or less, preferably 10 μm or more and 20 μm or less. Further, the distance L140 (which may be referred to as the film thickness of the wiring 140 including the seed layer 141) is preferably 3 μm or more and 8 μm or less.

  After the wiring 140 is formed, a first heat treatment 133-6 is performed. The protective member 320-8 is peeled off by the first heat treatment 133-6.

  Next, as illustrated in FIG. 24, the wiring 240 is formed on the through electrode 120 and the insulating layer 230 on the second surface 110 </ b> B side of the substrate 110. At this time, the protective member 320 may not be provided on the first surface 110 </ b> A side of the substrate 110. As described above, the resist film 139 has a large film thickness. Thereby, the resist film 139 has rigidity. Therefore, a resist film 139 may be used instead of the protective member 320. Since the resist film 139 is cured by the first heat treatment 133-6, there is no concern that a part of the resist film 139 adheres even if it comes into contact with the manufacturing apparatus. Further, as described above, the upper surface of the wiring 140 is recessed from the upper surface of the resist film 139. This prevents the wiring 140 from contacting the manufacturing apparatus. Therefore, disconnection of the wiring 140 is prevented when the protective member 320 is not used.

  The wiring 240 may be formed by a semi-additive method similarly to the wiring 140. At this time, the seed layer 241 and the resist film 239 are used. After the wiring 240 is formed, the resist film 139 and the resist film 239 are removed by ashing treatment or chemical treatment. Further, a portion of the seed layer 141 where the wiring 140 is not formed and a portion of the seed layer 241 where the wiring 240 is not formed are removed by an etching method.

  Subsequently, the insulating layer 150, the insulating layer 250, the bump electrode 160, and the bump electrode 260 are sequentially formed. Note that when the insulating layer 150 is formed, the protective member 320 may be provided on the second surface 110 </ b> B side of the substrate 110 as in the case of the insulating layer 130. Further, when the insulating layer 250 is formed, the protective member 320 is not necessarily provided on the first surface 110 </ b> A side of the substrate 110 as in the case of the insulating layer 230. The insulating layer and the wiring may be formed in the same manner when stacked.

  In the above manufacturing method, the wiring substrate 100 can be manufactured without attaching the protective member 320 to the first surface 110A side of the substrate 110. Accordingly, it is possible to reduce the process of attaching and peeling the protective member 320 while reducing defects in the manufacturing process of the wiring board such as cracking, chipping or warping of the substrate 110. Therefore, by using this embodiment, it is possible to provide a method for manufacturing a wiring board using a thin board without degrading electrical characteristics while having a stable manufacturing process and high productivity.

  In the present embodiment, when the wiring 140 is formed, the example in which the protective member 320-8 is formed on the second surface 110B side of the substrate 110 is shown, but the present invention is not limited to this. The protective member 320-8 is not necessarily provided. At this time, the thickness of the insulating layer 230 is preferably 3 μm to 30 μm, more preferably 10 μm to 20 μm. Thereby, even if the protective member 320-8 is not provided, the insulating layer 230 functions as a substitute for the protective member 320 due to the large thickness of the insulating layer 230. Therefore, it is possible to provide a method for manufacturing a wiring board having a stable manufacturing process and high productivity.

<Fourth embodiment>
In the present embodiment, a semiconductor device 500 including the wiring substrate 100 described in the first to third embodiments will be described.

  FIG. 25 is a cross-sectional view of the semiconductor device 500. 25, the semiconductor device 500 includes an RF element 600, a chip-shaped semiconductor element 610 including a transistor, a wiring substrate 100, and a package substrate 800. The semiconductor element 610 functions as a central processing unit (CPU) or a storage device. The wiring board 100 has a function as an interposer. The RF element 600 and the semiconductor element 610 are connected to the wiring substrate 100 using a bump electrode 650 or the like. Note that the bump electrode 160 may be used as the bump electrode 650. Further, the RF element 600 and the semiconductor element 610 may be sealed with a mold resin. The wiring substrate 100 and the package substrate 800 are connected using a bump electrode 750 containing tin (Sn), silver (Ag), or the like. A bump electrode 260 may be used as the bump electrode 750. Further, the gap between the wiring substrate 100 and the package substrate 800 may be sealed by being filled with an underfill resin. The semiconductor device 500 may be used for noise elimination or for a signal filter.

<Fifth Embodiment>
In this embodiment, an example in which the semiconductor device 500 described in the fourth embodiment is applied to an electric device will be described.

  FIG. 26 is a diagram illustrating an electrical device. The semiconductor device 500 including the wiring substrate 100 is, for example, a portable terminal (mobile phone, smartphone and notebook personal computer, game machine, etc.), information processing device (desktop personal computer, server, car navigation, etc.), home electric It is installed in various electric devices such as equipment (microwave oven, air conditioner, washing machine, refrigerator), automobiles, etc. FIG. 26A illustrates a smartphone 4000. FIG. 26B illustrates a portable game machine 5000. FIG. 26C illustrates a laptop personal computer 6000.

  In these electrical devices, the semiconductor device 500 including the RF element 600 and the semiconductor element 610 includes a noise filter, a signal filter, a control unit configured by a CPU or the like that implements various functions by executing application programs, and the like. Can have functions.

(Modification 1)
In the first to third embodiments of the present disclosure, an example in which an alkali-free glass substrate is used as the substrate 110 has been described. However, the present invention is not limited to this. The substrate 110 is a quartz glass substrate, soda glass substrate, borosilicate glass substrate, sapphire substrate, silicon substrate, silicon carbide substrate, alumina (Al ₂ O ₃ ) substrate, aluminum nitride (AlN) substrate, zirconia (ZrO ₂ ) substrate, A resin substrate containing acrylic or polycarbonate, or a laminate of these substrates may be used. For example, when a silicon substrate is used as the substrate 110, an alkaline solution or nitric acid and hydrofluoric acid are used when the through hole 115 is formed by a wet etching method. In addition, although a silicon substrate is harder to break than a glass substrate, when a plate | board thickness becomes extremely thin (for example, plate | board thickness of 100 micrometers or less), a wiring board can be manufactured by using the manufacturing method of this indication.

(Modification 2)
In the first embodiment of the present disclosure, the example in which the wiring and the insulating layer are provided on the first surface 110A and the second surface 110B of the substrate 110 has been described. However, the present invention is not limited to this. For example, as in the wiring substrate 100-1 shown in FIG. 27, the wiring and the insulating layer may be provided on either the first surface 110A or the second surface 110B. When the wiring and the insulating layer are formed only on one side of the substrate 110 and the stress concentration is increased, the warpage of the substrate can be suppressed by using the manufacturing method of the first embodiment of the present disclosure.

(Modification 3)
Moreover, in 1st Embodiment of this indication, although the example in which the through-hole 115 was provided was shown, it is not limited to this. For example, a hole 116 may be provided like a wiring board 100-2 shown in FIG.

(Modification 4)
Moreover, although 1st Embodiment of this indication demonstrated the example in which the penetration electrode 120 was formed in the side wall part of the through-hole 115, it is not limited to this. For example, like the wiring board 100-3 shown in FIG. 29, the through electrode 120 may be provided by filling the through hole 115. When the through electrode 120 is formed, a chemical mechanical polishing (CMP) method may be used as appropriate.

(Modification 5)
In the first to third embodiments of the present disclosure, the example in which two wiring layers and two insulating layers are disposed on one surface of the substrate 110 has been described, but the present disclosure is not limited thereto. For example, three or more wirings and three or more insulating layers may be used. The wiring may be formed in the same manner as the wiring 140. The insulating layer may be formed in a manner similar to that of the insulating layer 150.

  In addition, the number of wiring and insulating layers may be different between the first surface 110A and the second surface 110B of the substrate 110. For example, as shown in FIG. 30, the wiring substrate 100-4 is further provided with an insulating layer 170 and a wiring 180 on the first surface 110A side. In this case, the wiring board 100-4 may have a configuration in which three layers of wiring and insulating layers are provided on the first surface 110A side and two layers of wiring and insulating layers are provided on the second surface 110B side.

  DESCRIPTION OF SYMBOLS 100 ... Wiring board, 110 ... Board | substrate, 110A ... 1st surface, 110B ... 2nd surface, 115 ... Through-hole, 116 ... Hole part, 117 ... Resin, 120 ... through electrode, 125 ... seed layer, 130 ... insulating layer, 131 ... aperture, 133 ... heat treatment, 135 ... heat treatment, 140 ... wiring, 150 ... Insulating layer, 155 ... opening, 160 ... bump electrode, 170 ... insulating layer, 180 ... wiring, 230 ... insulating layer, 231 ... opening, 240 ... Wiring 250 ... Insulating layer 260 ... Bump electrode 310 ... Adhesive material 311 ... Thermal expansion material 320 ... Protection member 500 ... Semiconductor device 600 ... RF Element, 610 ... Semiconductor element, 650 ... Bump electrode, 750 ... Bump electrode 800 ... package substrate, 4000 ... smartphone, 5000 ... portable game machine, 6000 ... notebook personal computer

Claims (16)

The second surface of the substrate having a first surface and a second surface opposite to the first surface, a through-hole penetrating the first surface and the second surface, and a through-electrode provided in the through-hole. A protective member is bonded to the surface via an adhesive,
Forming an insulating layer on the first surface of the substrate;
Forming an opening to expose the through electrode in the insulating layer;
Forming a wiring on the insulating layer so as to be in contact with the through electrode;
The substrate and the protective member are separated by a first heat treatment,
A method for manufacturing a wiring board, wherein the insulating layer is cured by a second heat treatment at a higher temperature than the first heat treatment. The adhesive includes a thermal expansion material,
Peeling off the protective member from the substrate by the first heat treatment;
The manufacturing method of the wiring board of Claim 1. The temperature of the first heat treatment is 150 ° C. or more and 200 ° C. or less, and the temperature of the second heat treatment is 200 ° C. or more and 300 ° C. or less.
The manufacturing method of the wiring board of Claim 1 or 2. The thickness of the substrate is not less than 100 μm and not more than 500 μm,
The diameter of the through hole is 100 μm or less,
The manufacturing method of the wiring board as described in any one of Claims 1 thru | or 3. The substrate is a glass substrate;
The manufacturing method of the wiring board as described in any one of Claims 1 thru | or 4. Adhering the first surface of the substrate and another protective member via another adhesive,
Forming at least one of another wiring and another insulating layer on the second surface of the substrate;
The manufacturing method of the wiring board as described in any one of Claims 1 thru | or 5. Forming a second insulating layer on the second surface of the substrate;
Forming a second opening for exposing the through electrode in the second insulating layer;
The insulating layer and the second insulating layer are cured by a second heat treatment higher than the first heat treatment,
A resist film is formed on the insulating layer to have a predetermined shape,
Forming a first wiring on the through electrode and the insulating layer on the first surface side of the substrate;
Forming a second wiring on the through electrode and the second insulating layer on the second surface side of the substrate using the resist film;
The manufacturing method of the wiring board as described in any one of Claims 1 thru | or 5. Bonding another protective member to the second insulating layer via another adhesive,
After forming the first wiring, the substrate and the other protective member are separated by another first heat treatment,
The manufacturing method of the wiring board of Claim 7. The thickness of the insulating layer and the thickness of the second insulating layer are 3 μm or more and 30 μm or less.
The manufacturing method of the wiring board of Claim 7 or 8. The distance from the upper surface of the insulating layer to the upper surface of the first wiring is smaller than the distance from the upper surface of the insulating layer to the upper surface of the resist film,
The manufacturing method of the wiring board of Claim 9. The film thickness of the resist film is 5 μm or more and 30 μm or less,
The manufacturing method of the wiring board of Claim 10. A first surface and a second surface opposite to the first surface, a through-hole penetrating the first surface and the second surface, and a substrate provided with a through-electrode in the through-hole;
One or more wirings and one or more insulating layers provided on at least one of the first surface and the second surface;
Including
The thickness of the substrate is not less than 100 μm and not more than 500 μm,
The diameter of the through hole is 100 μm or less,
Wiring board. The substrate is a glass substrate;
The wiring board according to claim 12. The film thickness of the one or more insulating layers is 3 μm or more and 20 μm or less.
The wiring board according to claim 13. At least one of the first surface and the second surface,
An adhesive that includes a thermal expansion material, and whose peel strength is reduced by heat above a predetermined temperature;
A protective member in contact with the adhesive,
The wiring board according to claim 12. A wiring board according to any one of claims 12 to 15, and an integrated circuit electrically connected to the wiring board.
Semiconductor device.

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