JP2018073862A - Imprint device, imprint method, and method for manufacturing article - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an imprint device advantageous for improvement of overlay accuracy of a board and a mold.SOLUTION: An imprint device for patterning an imprint material on a board by bringing a mold side pattern Pinto contact with an imprint material supplied to a board side pattern Phas a measurement unit 150 for obtaining the information of shape difference between respective patterns, a deformation unit 123 for thermally deforming the board side pattern P, and a drive mechanism for adjusting the distance of the mold and the board. In a state where each pattern can be measured, and the board side pattern Pwas adjusted to a first distance D longer than the distance coming into contact with the imprint material, the measurement unit 150 obtains information of shape difference, and in the state of the first distance D, the deformation unit 123 deforms the board side pattern Pso as to reduce shape difference, and after deformation, the drive mechanism adjusts the distance from the first distance D to the contact distance, at a moment in time when the temperature difference between respective patterns goes below a prescribed value.SELECTED DRAWING: Figure 2

Description

  The present invention relates to an imprint apparatus, an imprint method, and an article manufacturing method.

  There is an imprint technique for forming a fine pattern by bringing a mold into contact with an imprint material on a substrate. One of the imprint technologies is a photocuring method using a photocurable resin as an imprint material. In an imprint apparatus employing this photocuring method, first, an imprint material is supplied onto a substrate. Next, the imprint material on the substrate is molded with a mold (pressing mold). And after hardening the imprint material shape | molded by the type | mold by light irradiation, a type | mold and the hardened imprint material are pulled apart (mold release), and a pattern is formed on a board | substrate.

  In order to form a highly accurate pattern, it is necessary to accurately superimpose the shape of the substrate-side pattern formed in advance on the substrate and the shape of the mold-side pattern formed on the die when pressing. The pattern forming apparatus of Patent Document 1 adjusts the dimensional ratio between the substrate and the mold by adjusting the temperature of at least one of the substrate and the mold.

JP 2004-259985 A

  There is a die-by-die method as a method of overlaying the substrate side pattern and the mold side pattern. In the die-by-die method, the substrate to which the imprint material is supplied is brought close to the mold, the shape difference between the substrate side pattern and the mold side pattern is measured, and the substrate side pattern or the mold side pattern is deformed based on the measurement result. The deformation of the substrate side pattern or the mold side pattern can be performed using the technique of the above-mentioned Patent Document 1.

  However, as the pattern to be formed becomes finer and the imprint material supplied on the substrate becomes thinner, the substrate-side pattern or the mold-side pattern is deformed using the technique of Patent Document 1 in the die-by-die method. Can be difficult.

  An object of the present invention is, for example, to provide an imprint apparatus that is advantageous in improving the overlay accuracy of a substrate and a mold.

  In order to solve the above-described problems, the present invention brings a mold side pattern formed on a mold into contact with an uncured imprint material supplied on the substrate side pattern formed on the substrate. An imprint apparatus for forming a pattern of an imprint material, measuring a mold side pattern and a substrate side pattern to obtain information on a shape difference between the mold side pattern and the substrate side pattern, and heating the substrate side pattern And a driving mechanism that adjusts the distance between the mold and the substrate so that the mold-side pattern and the imprint material are in contact with each other, and the distance is determined by the driving mechanism. In a state in which the pattern can be measured and the mold side pattern is adjusted to the first distance longer than the contact distance with which the imprint material comes into contact, the measurement unit obtains information on the shape difference and sends it to the drive mechanism With the distance adjusted to the first distance, the deformation unit deforms the substrate side pattern so as to reduce the shape difference based on the information obtained by the measurement unit, and the drive mechanism deforms the substrate side pattern. Is completed, the distance is adjusted from the first distance to the contact distance when the temperature difference between the mold side pattern and the substrate side pattern becomes equal to or less than a predetermined value.

  According to the present invention, for example, it is possible to provide an imprint apparatus that is advantageous for improving the overlay accuracy between a substrate and a mold.

It is a figure which illustrates the structure of an imprint apparatus. It is a figure which shows the positional relationship of the board | substrate with which the imprint material was supplied, and a type | mold. It is a flowchart which shows the imprint method which concerns on 1st Embodiment. It is a figure which shows the time change of the temperature difference of a board | substrate and a type | mold. It is a figure which shows arrangement | positioning of the temperature sensor which measures the temperature of a type | mold and the temperature of a board | substrate.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a schematic diagram showing a configuration of an imprint apparatus using a method according to an embodiment of the present invention. Here, as an imprint apparatus using a photocuring method, an ultraviolet curable imprint apparatus that cures an uncured imprint material on a substrate by irradiation with ultraviolet rays was used. However, as a method for curing the imprint material, a method using light irradiation in another wavelength region or a method using other energy (for example, heat) may be used. In the following figure, the Z axis is taken in parallel to the optical axis of the ultraviolet rays irradiated to the imprint material on the substrate, and the X axis and the Y axis perpendicular to each other are taken in a plane perpendicular to the Z axis. ing. The imprint apparatus of this embodiment is configured to form patterns in a plurality of shot areas of a substrate by repeating imprint processing. Here, the imprint process includes supplying the imprint material to the substrate, contacting the mold and the imprint material, filling the pattern of the imprint material, alignment (alignment), curing (exposure), mold It shall refer to a series of cycles including peeling (release).

  The imprint apparatus 100 includes a mold holding mechanism 110, an irradiation unit 120, a substrate holding mechanism 130, a dispenser 140, an alignment measurement unit 150, a distance measurement unit 160, and a control unit 170.

  The mold holding mechanism 110 includes a mold holding section (mold holding section) 111 that holds a mold (mask, mold) M, a mold stage (drive mechanism) 112, and a mold deformation section (mold deformation section) 113. The mold M is held by the mold holding unit 111 by a vacuum suction force, an electrostatic force, or the like. The mold stage 112 mechanically holds the mold holding unit 111. The mold stage 112 controls the position of the mold M with respect to the six axes, presses the mold M against the substrate W or the imprint material R on the substrate W, and peels (separates) the mold M from the cured imprint material R. Type). Here, the six axes are rotations around the X axis, Y axis, Z axis and their respective axes in the XYZ coordinate system. The mold stage 112 may be composed of a plurality of drive systems such as a coarse drive system and a fine drive system. For example, the mold deforming unit 113 can deform the shape of the mold M by pressurizing the mold M from the outer peripheral direction using a cylinder that operates with a fluid such as air or oil. In addition, the shape of the mold M may be deformed by controlling the temperature of the mold M. The mold deforming unit 113 corrects the shape of the mold M so as to improve the overlay accuracy of the substrate W and the mold M according to the deformation of the substrate W.

  Here, the mold M has, for example, a rectangular outer peripheral portion, a predetermined uneven pattern is formed in a three-dimensional shape on the surface facing the substrate W, and is made of a material (such as quartz) that transmits ultraviolet rays. The The substrate W is a substrate onto which the uneven pattern is transferred, and includes, for example, a single crystal silicon substrate, an SOI (Silicon on Insulator) substrate, or the like.

  The irradiation unit 120 includes a light source 121 and an optical system 122, and irradiates the imprint material R with ultraviolet light through the mold M to be cured. The light source 121 includes, for example, a light source such as a mercury lamp that generates ultraviolet light (for example, i-line or g-line), and an elliptical mirror that collects light generated by the light source. The optical system 122 includes a lens, an aperture, a half mirror, and the like for irradiating the imprint material in the pattern formation region (shot region) on the substrate W with light for curing the imprint material R. The aperture is used for angle of view control and outer periphery light shielding control. Only the target shot area can be illuminated by the angle of view control, and the irradiation of ultraviolet light beyond the shot area of the substrate W can be limited by the outer periphery light shielding control. The optical system 122 may include an optical integrator to uniformly illuminate the mold M. The light whose range is defined by the aperture is incident on the imprint material R on the substrate W through the imaging system (not shown) and the mold M. In addition, when using the thermosetting imprint material R, the heat source unit for hardening not the irradiation part 120 but the imprint material R is needed. Further, the irradiation unit 120 includes a substrate heating light source (substrate deformation unit) 123 for heating and deforming the substrate W with the irradiated light (heating light) separately from the light source 121. The heating light is light in a wavelength region where the imprint material R is not exposed to light, and light in a wavelength region different from the wavelength of the measurement light emitted from the alignment measurement unit 150. For example, visible light can be used as the heating light.

  The substrate holding mechanism 130 includes a substrate holding part 131 and a substrate stage (drive mechanism) 132. The substrate holding unit 131 mechanically holds the back surface of the substrate W, for example. The substrate stage 132 mechanically holds the substrate holding part 131. The substrate stage 132 is a drive system that drives in the X-axis direction and the Y-axis direction for aligning the substrate W and the mold M. Further, the drive system in the X-axis direction and the Y-axis direction may be composed of a plurality of drive systems such as a coarse drive system and a fine drive system. Furthermore, it has a drive system for adjusting the position in the Z-axis direction, a function for adjusting the position of the substrate W in the θ (rotation around the Z-axis) direction, and a tilt function for correcting the tilt of the substrate W. Also good.

  The dispenser 140 includes, for example, a tank that stores the imprint material R, a nozzle that discharges the imprint material R supplied from the tank through the supply path to the substrate W, a valve provided in the supply path, And a supply amount control unit. The supply amount control unit typically imprints on the substrate W by controlling the valve so that the imprint material R is applied to one shot region in one discharge operation of the imprint material R. The supply amount of the material R is controlled. The supply amount of the imprint material R can be determined by the required thickness of the imprint material R, the pattern density to be transferred, and the like. The supply amount control unit may be replaced by the control unit 170.

  The alignment measurement unit 150 includes a scope 151, a half mirror 152 that adjusts the optical path of the scope 161, and a light source (not shown) that emits measurement light. The scope 151 detects the mold side mark formed on the mold M and the substrate side mark formed on the substrate W through the mold M. In this embodiment, the mold side mark and the substrate side mark are detected by the die-by-die method in a state where the mold M and the substrate W (imprint material R) are brought close to each other, and the mold M and the substrate W are detected based on the detection result. Align (align).

  The mold side mark and the substrate side mark are diffraction gratings, and the alignment measurement unit 150 detects position information by irradiating each mark with measurement light and receiving diffracted light from each mark. A plurality of marks are provided in each of the mold-side pattern and the substrate-side pattern, and the relative position and shape difference between the mold-side pattern and the substrate-side pattern can be measured from the relative position information of each mark. In order for the alignment measurement unit 150 to detect position information on the order of nm, it is desirable to bring the mold side mark and the substrate side mark as close as possible, specifically, close to a distance of 10 μm or less.

  The distance measuring unit 160 measures the distance and inclination of the mold side pattern surface of the mold M at the contact position where the mold M and the imprint material R on the substrate W are brought into contact with each other. The distance measurement unit 160 includes, for example, a laser interferometer that is provided on the substrate stage 132 and irradiates light (laser light) onto the mold side pattern surface. The distance measurement unit 160 can be configured to detect the height (position in the Z direction) of a part on the mold side pattern surface irradiated with light. Then, the control unit 170 moves the substrate stage 132 along the base surface plate 182 to cause the distance measurement unit 160 to detect the height of each of a plurality of locations on the pattern surface of the mold M. Thereby, the distance measurement part 160 measures the inclination of a mold side pattern surface by the height detected about each of the some location in the mold side pattern surface of the type | mold M. FIG. Similarly, a laser interferometer is disposed on the mold holding mechanism 110 to measure the distance and inclination of the substrate-side pattern surface of the substrate W with respect to the mold holding mechanism 110. From the above measurement results, the mold stage 112 is driven to adjust the inclination and Z position of the mold M, and the distance and parallelism between the substrate W and the mold M are controlled. The substrate holding mechanism 130 and the mold holding mechanism 110 ensure absolute positions when the imprint apparatus 100 is assembled and adjusted. Using the measurement result by the distance measurement unit 160, it is also possible to correct a delivery error between the substrate W and the mold M that occurs in the process of being transported into the imprint apparatus 100.

  The control unit 170 controls the operation of each component (such as the mold stage 112) of the imprint apparatus 100, adjustment processing, and the like. The control unit 170 is configured by a computer having a storage unit such as a magnetic storage medium connected to each component of the imprint apparatus via a line, or a sequencer (not shown). The method according to the present embodiment can be executed by a computer as a program. In addition, the imprint apparatus 100 includes a mold transport mechanism (not shown) that transports the mold M to the mold holding mechanism 110 and a substrate transport mechanism (not shown) that transports the substrate W to the substrate holding mechanism 130. Further, the imprint apparatus 100 includes a bridge surface plate 180 that holds the mold holding mechanism 110, a column 181 that supports the bridge surface plate 180, and a base surface plate 182 that holds the substrate holding mechanism 130.

  In addition, the mold holding mechanism 110 may have a cavity (concave portion) 114 on the side in contact with the back surface of the mold M (the surface facing the surface on which the mold side pattern is formed). Further, the mold holding mechanism 110 may include a pressure adjusting unit that controls the pressure in the space surrounded by the mold holding mechanism 110 and the cavity 114. For example, when the mold M is pressed against the substrate W in a state where the pressure is higher than the outside and the mold side pattern is bent in the −Z direction, the mold M is applied to the imprint material R on the substrate W at the center of the mold side pattern. Will come in contact. As a result, it is possible to suppress air from being trapped between the imprint material R and the mold M, and to reduce unfilled defects in the imprint material.

FIG. 2 is a diagram showing the positional relationship between the substrate W supplied with the imprint material R and the mold M. As shown in FIG. The mold M, the mold-side mark AM1 described above and the concavo-convex pattern (mold-side pattern) P _M is provided. The substrate W is provided with the substrate side mark AM2 and the substrate side pattern _PW described above. An imprint material R is supplied onto the substrate W. A distance between the mold M (mold side pattern P _M ) and the substrate W (substrate side pattern P _W ) is defined as a distance D. In the present embodiment, the distance D when deforming the the substrate W, larger than the contact distance d ₁ of imprint material R is in contact with the mold-side pattern P _M, alignment measurement unit 150 of the mold-side mark AM1 and the substrate-side mark AM2 the measurable distance d ₂ below.

When the distance D is equal to or less than the contact distance d ₁ , that is, when the imprint material R supplied on the substrate W (= on the substrate-side pattern ₎ is in contact with the mold M, the mold M and the substrate W are A force (shearing force) in a direction parallel to the contact surface with the imprint material R may be generated. For example, when the thickness of the imprint material R sandwiched between the mold M and the substrate W becomes thinner than a certain value, the imprint material R exhibits high viscoelasticity due to the structuring of molecules in its components. Although the structuring of the imprint material R varies depending on the molecular size and molecular structure of the contained component, it can generally occur at a thickness of 100 nm or less.

When the imprint material R is structured, for example, when the substrate W is thermally deformed with light emitted from the substrate heating light source 123, the substrate W may be deformed into a desired shape due to the high viscoelasticity of the imprint material R. It can be difficult. Therefore, in the present embodiment, the distance D when the substrate W is thermally deformed is set to be larger than the contact distance d _{1 and not} more than the distance d ₂ . Thereby, the overlay accuracy of the mold M and the substrate W can be improved without being affected by the structuring of the imprint material R.

FIG. 3 is a flowchart showing the imprint method according to the first embodiment. In step S10, the dispenser 140 supplies the imprint material R onto the substrate W (= on the substrate-side pattern _PW ). Control unit at step S20 170 may adjust the XY direction position of the substrate-side pattern _{P W} and the mold-side pattern _{P M} by driving the substrate stage 132. In step S30, the control unit 170 drives the mold stage 112 to move the mold M in the −Z direction so that the distance D between the substrate W and the mold M satisfies d ₁ <D ≦ d ₂ . The contact distance d ₁ is a distance at which the imprint material R is in contact with the mold side pattern P _M and is a distance at which the space between the substrate side pattern P _W and the mold side pattern P _M is completely filled with the imprint material R. .

Control unit 170 in step step S40, controls the alignment measurement unit 150 measures the shape difference, the relative position between the substrate-side pattern P _W and the mold-side pattern P _M. In step S50, the control unit 170 calculates a correction amount of the substrate side pattern _PW from the measurement result obtained in step S40, and obtains a temperature distribution that deforms the substrate side pattern _PW by the correction amount. The controller 170 controls the substrate heating light source 123 to form the obtained temperature distribution on the substrate W. In step S40 and step S50, the distance D between the substrate W and the mold M is maintained at the distance set in step S30. In the present embodiment, the distance D between the substrate W and the mold M is, d 1 _<a desired shape of the substrate-side pattern P _W without imprint material R is structured because it satisfies the condition of _D ≦ d ₂ It can be thermally deformed.

After combining the shape of the substrate-side pattern _{P W} and the mold-side pattern _{P M} by step S50, the process proceeds to step S60. Control unit 170 in step step S60, (changing the distance D to the distance _{d 2)} by pressing a mold M to imprint material R on the substrate W by controlling the mold stage 112 or the substrate stage 132, the mold-side pattern _{P M} Is filled with an imprint material (mold). In step S70, the control unit 170 controls the irradiation unit 120 to irradiate the imprint material R with ultraviolet rays and cure it. When the imprint material R is cured, in step S80, the control unit 170 controls the mold stage 112 or the substrate stage 132 to peel the mold M from the imprint material R on the substrate W (release). Subsequently, in order to move to the imprint process for the next shot, the process returns to step S10, and steps S20 to S80 are repeated. Through the above steps, the uneven pattern of the cured imprint material R is formed on the substrate W.

As described above, the substrate-side pattern P _W and can measure the shape of the mold-side pattern P _M, and imprinted by close the substrate W and the mold M to the extent that the imprint material R is not in contact with the mold-side pattern P _M The influence of the structuring of the material R can be suppressed. Therefore, it is possible to match by deforming the substrate side pattern P _W regardless of the thickness of the imprint material R to the shape of the mold-side pattern P _M. According to the present embodiment, it is possible to provide an imprint apparatus that is advantageous in improving the overlay accuracy between the substrate and the mold.

(Second Embodiment)
If there is a temperature difference between the substrate W and the mold M, for example, when the mold is pressed, heat is transferred from the mold M to the substrate W, and the shape of the substrate-side pattern _PW may be deformed from a desired shape. Therefore, in the present embodiment, the above step S60 is performed in consideration of the difference between the temperature of the substrate W and the temperature of the mold M. FIG. 4 is a graph showing the change over time of the temperature difference between the substrate W and the mold M. FIG. The time from the start of heating of the substrate W in the step S50 is taken as the horizontal axis, and the temperature of the substrate W or the mold M is taken as the vertical axis. The solid line is the change curve of the temperature T ₀ of the substrate W, the dotted line is the change curve of the temperature T ₁ of the mold M when the distance between the mold M and the substrate W is a predetermined distance, and the two-dot chain line is the change curve of the mold M and the substrate W Is a change curve of the temperature T2 of the mold M when the _two are separated from each other by a predetermined distance.

The predetermined distance is determined so that the temperature difference between the substrate W and the mold M becomes an allowable value when the shape correction of the substrate-side pattern _PW is completed. The allowable temperature difference is determined by the linear expansion coefficient of the substrate W, a desired deformation error, and the like. For example, the size of the substrate-side pattern _{P W} and the mold-side pattern _{P M} and 33 mm × 26 mm, the substrate-side pattern _{P W} (substrate W) Material Si linear expansion coefficient of the ^{2.62 × 10 -6 [1 / K} ] of the And When the temperature of the substrate side pattern _PW is changed by 0.01 ° C., the deformation is approximately 1 nm at 33 [mm] × 2.62 × 10 ⁻⁶ [1 / K] × 0.01 [K] = 0.86 [nm]. To do. In order to suppress the deformation error to 1 nm or less, it is desirable that the temperature difference be 0.01 ° C. or less.

The temperature difference between the substrate W and the mold M is day become smaller with time but, when comparing the curves T ₁ and the curve T ₂ of the 4, until the temperature difference between the substrate W and the mold M is allowed value time is more of a curve T ₂ is fast. This is because the thermal resistance via the air between the substrate W and the mold M is reduced by bringing the substrate W and the mold M close to each other. In this embodiment, after the temperature difference becomes an allowable value, the stamping in step S60 is performed. In the case of the curve T _1, it has become the temperature difference is an allowable value when the shape correction of the substrate-side pattern P _W is completed, it is possible to perform quickly step S60. On the other hand, in the case of the curve T _2, waiting time until the temperature difference becomes the allowable value is required. That is, when the distance D between the substrate W and the mold M satisfies d ₁ <D ≦ d ₂ and the shape correction of the substrate side pattern P _W is completed, the temperature difference between the substrate W and the mold M is an allowable value. By determining so as to be, it is possible to improve the throughput.

FIG. 5 is a diagram illustrating an arrangement of temperature sensors that measure the temperature of the mold M and the temperature of the substrate W. Temperature of the mold-side pattern P _M is measured by the temperature sensor 200 mold-side pattern P _M of the mold M is positioned on the opposite side of the formed surface. The temperature sensor 200 is desirably arranged around the surface opposite to the surface on which the mold side pattern PM is formed so as not to interfere with the exposure region of the mold _M. Examples of the temperature sensor 200 that can be used include a thermocouple, thermistor, platinum resistance thermometer, and the like.

The substrate holding part 131 further includes, for example, chuck pins 133. The temperature of the substrate-side pattern _PW is measured by placing the temperature sensor 201 on the chuck pin 133 and contacting the back surface of the substrate W when holding the substrate W. Alternatively, the temperature sensor 202 may be disposed in a groove between adjacent chuck pins 133, and measurement may be performed in consideration of the thermal conductivity of the groove space. As the temperature sensors 201 and 202, for example, a thermocouple, a thermistor, a platinum resistance temperature detector, and the like can be used as described above. The temperature difference between the substrate W and the mold M can be obtained based on the outputs of the temperature sensors 200 to 202.

  In order to reduce the temperature difference between the substrate W and the mold M more quickly, a gas supply unit (not shown) may be provided around the mold M. The gas supply unit has a gas (He) having a higher thermal conductivity [W / m · K] than air between the substrate W and the mold M from step S50 (heating of the substrate W) to step S60 (pressing die). Etc.). By filling the space between the substrate W and the mold M with a gas having a high thermal conductivity, the temperature difference between the substrate W and the mold M can be made more quickly below the allowable value.

Further, when the substrate W is heated in step S50, the mold M can also be heated at the same time. However, since the thermal expansion coefficient of quartz is a material of the type M is sufficiently smaller than the silicon, which is the material of the substrate W, the thermal deformation of the mold-side pattern P _M is small with respect to the correction amount of the substrate-side pattern P _W It is slight. Furthermore, the thermal deformation amount of the mold-side pattern P _M can be corrected by the mold deformation portion 113. According to this embodiment, an unnecessary temperature change of the substrate-side pattern _PW during the pressing can be suppressed, and more accurate pattern shape correction can be performed.

The above embodiments are not limited thereto, and they may be combined. In the above embodiment, the shape of the substrate side pattern P _W is measured for each shot. For example, the shape of the substrate side pattern P _W of all shots is measured, and in the second flow, Step S40 may be omitted. Further, the measurement of the shape of the substrate-side pattern _PW may be performed before the imprint material R is supplied in step S10. That is, it may be performed after the substrate W is transported to the substrate holding mechanism 130, or may be performed in advance in another measurement area in the imprint apparatus 100. Further, it may be performed in advance by a substrate measuring device (not shown) before the substrate W is carried into the imprint apparatus 100. Further, the temperature difference between the mold M and the substrate W is determined based on the distance between the mold M and the substrate W from the measurement result of the distance measuring unit 160 without using the temperature sensor. It can also obtain | require from the thermal conductivity of the space between. Further, based on the distance between the mold M (mold holding unit 111) and the substrate W (substrate holding unit 131) set when the imprint apparatus 100 is assembled and adjusted, the distance between the mold M and the substrate W is set. The temperature difference can also be obtained from the thermal conductivity of the space. The temperature difference between the mold M and the substrate W may be obtained by combining any one or more of the temperature sensor, the distance measuring unit, and the distance between the mold M and the substrate W set during assembly and adjustment.

(Embodiment related to article manufacturing method)
A method of manufacturing a device (semiconductor integrated circuit element, liquid crystal display element, etc.) as an article uses a pattern of an imprint material on a substrate (wafer, glass plate, film substrate) using the above-described imprint apparatus. Forming a step. Furthermore, the manufacturing method may include a step of etching the substrate on which the pattern is formed. When manufacturing other articles such as patterned media (recording media) and optical elements, the manufacturing method may include other processes for processing a substrate on which a pattern is formed instead of etching. The method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

(Other embodiments)
As mentioned above, although embodiment of this invention has been described, this invention is not limited to these embodiment, A various change is possible within the range of the summary.

100 Imprint Device 150 Alignment Measurement Unit 123 Light Source for Substrate Heating (Substrate Deformation Unit)
M type W substrate P _M type side pattern P _W substrate side pattern R Imprint material

Claims (10)

An imprint apparatus for forming a pattern of an imprint material on the substrate by bringing a mold side pattern formed on the mold into contact with an uncured imprint material supplied on the substrate side pattern formed on the substrate Because
A measurement unit for measuring the mold side pattern and the substrate side pattern to obtain information on a shape difference between the mold side pattern and the substrate side pattern;
A deforming portion that heats and deforms the substrate-side pattern;
A drive mechanism that adjusts the distance between the mold and the substrate so that the mold-side pattern and the imprint material are in contact with each other;
In a state where the distance can be measured by the driving mechanism and the mold side pattern and the substrate side pattern can be measured, and the mold side pattern is adjusted to a first distance longer than a contact distance at which the mold side pattern contacts the imprint material. The measurement unit obtains the information on the shape difference,
In a state where the distance is adjusted to the first distance by the drive mechanism, the deformation unit deforms the substrate side pattern so as to reduce the shape difference based on the information obtained by the measurement unit,
The driving mechanism is configured to change the distance from the first distance to the contact distance when the deformation of the substrate side pattern ends and a temperature difference between the mold side pattern and the substrate side pattern becomes a predetermined value or less. An imprint apparatus characterized by adjusting to the above.   2. The input according to claim 1, wherein the first distance is determined so that a time point at which the deformation of the substrate-side pattern is finished is close to a time point at which the temperature difference becomes a predetermined value or less. Printing device. A mold holding unit for holding the mold and a substrate holding unit for holding the substrate;
The mold holding unit includes a first sensor that measures the temperature of the mold side pattern,
The substrate holding unit includes a second sensor that measures the temperature of the substrate-side pattern,
The imprint apparatus according to claim 1, wherein the temperature difference is obtained based on an output of the first sensor and an output of the second sensor.   The temperature difference is obtained from the distance obtained based on a preset positional relationship between the mold side pattern and the substrate side pattern. The imprint apparatus described. A distance measuring unit for measuring the distance;
The imprint apparatus according to claim 1, wherein the temperature difference is obtained based on a measurement result of the distance by the distance measurement unit. A gas supply unit for supplying a gas having a higher thermal conductivity than air between the mold and the substrate;
6. The imprint apparatus according to claim 1, wherein the gas supply unit supplies the gas at the first distance until the deformation of the substrate-side pattern is finished. The measurement unit includes a first light source that emits light of a first wavelength that illuminates the mold side pattern and the substrate side pattern,
The said deformation | transformation part is equipped with the 2nd light source which radiate | emits the light of the 2nd wavelength different from the said 1st wavelength which heats the said board | substrate side pattern, Any one of Claim 1 thru | or 6 characterized by the above-mentioned. The imprint apparatus described in 1.   The imprint apparatus according to claim 1, further comprising a mold deforming unit that deforms the mold side pattern so as to reduce the shape difference. An imprint method in which a pattern of an imprint material is formed on the substrate by contacting a mold side pattern formed on the mold and an uncured imprint material supplied to the substrate side pattern formed on the substrate. There,
The distance between the mold and the substrate is adjusted to a first distance that can measure the mold-side pattern and the substrate-side pattern and is longer than a contact distance at which the mold-side pattern contacts the imprint material. ,
In the first distance, the mold side pattern and the substrate side pattern are measured to obtain information on the shape difference between the mold side pattern and the substrate side pattern,
At the first distance, based on the information, the substrate side pattern is deformed so as to reduce the shape difference,
The imprint method, wherein the distance is adjusted from the first distance to the contact distance when a temperature difference between the mold side pattern and the substrate side pattern becomes a predetermined value or less. Forming a pattern on a substrate using the imprint apparatus according to any one of claims 1 to 8 or the imprint method according to claim 9;
Processing the substrate on which the pattern is formed in the step;
An article manufacturing method comprising:

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