JP2017026701A5

JP2017026701A5 -

Info

Publication number: JP2017026701A5
Application number: JP2015142927A
Authority: JP
Filing date: 2015-07-17
Publication date: 2017-06-15
Anticipated expiration: 2035-07-17

Description

（構成８）
構成７に記載の製造方法によって製造された位相シフトマスクを露光装置のマスクステージに載置する工程と、
前記位相シフトマスクに露光光を照射して、表示装置基板上に形成されたレジスト膜に前記位相シフト膜パターンを転写する工程と
を有することを特徴とする表示装置の製造方法。

(Configuration 8)
Placing the phase shift mask manufactured by the manufacturing method according to Configuration 7 on a mask stage of an exposure apparatus;
Irradiating the phase shift mask with exposure light, and transferring the phase shift film pattern to a resist film formed on the display device substrate.

Claims

A phase shift mask blank comprising a phase shift film made of a chromium-based material on a transparent substrate,
The phase shift film is disposed mainly on the upper side of the phase shift layer and has a function of adjusting the transmittance and phase difference with respect to exposure light, and reflects light incident from the phase shift film side. A reflectance reduction layer having a function of reducing the reflectance, and is disposed between the phase shift layer and the reflectance reduction layer, and is higher than the extinction coefficient of the reflectance reduction layer in a wavelength region of 350 nm to 436 nm. A metal layer having an extinction coefficient,
Due to the laminated structure of the phase shift layer, the metal layer, and the reflectance reduction layer, the transmittance and phase difference of the phase shift film with respect to exposure light have predetermined optical characteristics, and from the phase shift film side A phase shift mask blank, wherein a film surface reflectance of the phase shift film with respect to incident light is 10% or less in a wavelength region of 350 nm to 436 nm.

A phase shift mask blank comprising a phase shift film made of a chromium-based material on a transparent substrate,
The phase shift film is disposed mainly on the upper side of the phase shift layer and has a function of adjusting the transmittance and phase difference with respect to exposure light, and reflects light incident from the phase shift film side. A reflectance reduction layer having a function of reducing the reflectance, and a metal layer disposed between the phase shift layer and the reflectance reduction layer and having a chromium content higher than the chromium content of the reflectance reduction layer; Have
Due to the laminated structure of the phase shift layer, the metal layer, and the reflectance reduction layer, the transmittance and phase difference of the phase shift film with respect to exposure light have predetermined optical characteristics, and from the phase shift film side A phase shift mask blank, wherein a film surface reflectance of the phase shift film with respect to incident light is 10% or less in a wavelength region of 350 nm to 436 nm.

The phase shift mask blank according to claim 1 or 2, wherein a fluctuation range of the film surface reflectance of the phase shift film is 5% or less in a wavelength region of 350 nm to 436 nm.

The phase shift mask blank according to claim 1 or 2, wherein a film surface reflectance of the phase shift film is 13% or less in a wavelength range of 313 nm to 436 nm.

5. The phase shift mask blank according to claim 4, wherein the fluctuation range of the film surface reflectance of the phase shift film is 10% or less in a wavelength range of 313 nm to 436 nm.

The phase shift mask blank according to any one of claims 1 to 5, further comprising a light-shielding film pattern between the transparent substrate and the phase shift film.

Drawing process using a laser beam having any wavelength selected from a wavelength range of 350 nm to 436 nm on the phase shift film of the phase shift mask blank according to claim 1, and A step of forming a resist film pattern by development processing;
Etching the phase shift film using the resist film pattern as a mask to form a phase shift film pattern on the transparent substrate.

Placing the phase shift mask manufactured by the manufacturing method according to claim 7 on a mask stage of an exposure apparatus;
Irradiating the phase shift mask with exposure light, and transferring the phase shift film pattern to a resist film formed on the display device substrate.

9. The method for manufacturing a display device according to claim 8, wherein the exposure light is composite light including light having a plurality of wavelengths selected from a wavelength range of 313 nm to 436 nm.