JP2017061146A - Production device of silicon nitride ceramic aggregate substrate and production method of silicon nitride ceramic aggregate substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device for dividing and removing an ear part from a ceramic sintered substrate where a high degree of margin is possessed in positioning and the occurrence of cracks or the like is suppressed.SOLUTION: A device for dividing and removing an ear part from a ceramic sintered substrate, includes: a positioning mechanism for positioning a ceramic sintered substrate 1 placed on a base 50 so as to keep a distance L1 between the base and a side breaking line 13; a pressing member 58 for applying a load onto the main surface of the ceramic sintered substrate and being disposed so as to keep a distance L2 to the side breaking line; a punching mechanism equipped with a punching member 53 for applying a load to an ear part 11; and a carrying mechanism for carrying the ceramic sintered substrate or the like to the base. The distance L1 between the side surface of the base and the center of the side breaking line is 1.0-5.0 mm and the distance L2 between the side surface of the pressing member and the center of the side breaking line is 0-10.0 mm.SELECTED DRAWING: Figure 4

Description

  The present invention relates to an apparatus for manufacturing a silicon nitride ceramic aggregate substrate and a method for manufacturing a silicon nitride ceramic aggregate substrate (hereinafter sometimes simply referred to as “manufacturing method”) for obtaining a large number of circuit boards.

  Circuit circuit boards used for semiconductor modules, power modules, etc. use circuit ceramic substrates in terms of thermal conductivity, insulation, strength, etc., and this circuit ceramic substrate is made of a metal circuit board such as Cu or Al. A metal heat sink is joined to form a circuit board. Alumina and aluminum nitride materials have been widely used as ceramic substrates for circuits, but recently, silicon nitride with high strength and improved thermal conductivity has been used so that it can be used in more severe environments. It has become.

  As a technology for mass production of circuit boards, a metal plate such as a Cu plate is joined to one ceramic aggregate substrate having a size capable of cutting out a large number of circuit ceramic substrates by an active metal brazing method or a direct joining method. Then, a metal circuit board and a metal heat sink are formed by etching or the like. Next, the ceramic aggregate substrate is divided into predetermined sizes to obtain individual circuit boards.

  As a method of dividing into individual circuit boards, a recess or groove is formed in the ceramic aggregate substrate by laser processing before joining a Cu plate, etc., and the ceramic aggregate substrate with the circuit board is bent after joining to form the concave portion. Or the method of dividing | segmenting by a groove | channel is employ | adopted.

  The inventors of the present invention have divided a sintered hole (non-penetrating hole) by laser processing on a sintered ceramic substrate as-sintered, and dividing it by a dividing line by the scribe hole by hand. When the ceramic aggregate substrate was prepared by removing the four sides of the ceramic sintered substrate, it was found that cracks, chips, etc. were likely to occur at the edge of the ceramic aggregate substrate. Even in the process of manufacturing a circuit board, there has been a problem that the yield of collecting circuit boards decreases when the edge portions are removed from the ceramic aggregate substrate to obtain a plurality of circuit boards. Moreover, when the removal of the four sides of the ceramic sintered substrate was examined using a conventional dividing apparatus, it was found that cracks and cracks were generated.

  Patent Document 1 (Japanese Patent Laid-Open No. 5-8200) is a ceramic substrate dividing apparatus, which includes “a substrate holder on which a substrate is mounted, a substrate pressing pin for fixing the substrate, a substrate dividing claw for dividing the substrate, and the substrate pressing pin. A ceramic substrate dividing apparatus comprising: a first air cylinder that moves; a second air cylinder that moves the substrate dividing claw; and a guide that holds a position of the substrate pressing pin and the substrate dividing claw ”(refer to claim 1). Is described.

  Patent Document 2 (Japanese Patent Laid-Open No. 9-136319) is a substrate dividing apparatus, which includes a “substrate mounting table, pressing means for pressing the substrate against the mounting table, a pressing unit for folding the substrate at a dividing groove, and A substrate dividing apparatus, comprising: a cutter blade integrally formed with a taper-shaped cutter portion for cutting the substrate at the dividing groove portion; and a driving means for moving the cutter blade up and down. Item 1) is described.

JP-A-5-8200 JP 9-136319 A

  In the dividing apparatus of the prior art, when dividing the rectangular ceramic sintered substrate into the ceramic aggregate substrate and the ear portion, it is necessary to perform alignment again. Moreover, the problem of the crack and the crack which generate | occur | produce in the edge part of a ceramic aggregate substrate has not been eliminated. In particular, when producing a silicon nitride ceramics aggregate substrate having high strength and high thermal conductivity, problems of cracks and cracks are likely to occur due to high strength and high toughness.

  In the ceramic substrate dividing apparatus of Patent Document 1, a numerical value equivalent to 0.5 mm is described as the distance between the surface including the side surface of the substrate receiver 4 and the center in the width direction of the groove 12 in FIG. Since the side surface of the substrate receiver 4 and the groove 12 are too close, the margin for alignment of the substrate is poor. Therefore, when the ceramic substrate is arranged in the dividing device, if there is a slight deviation, the groove 12 is sandwiched between the substrate receiver 4 and the substrate pressing pin 6, so that there is a problem that realignment is required. .

  In the dividing device of Patent Document 2, the distance between the side surface of the mounting table 40 and the dividing groove 61 is not disclosed in FIG. However, since B in FIG. 5 is “about 30 mm” (see paragraph 0005), the distance between the pressing member 201 and the dividing groove is estimated to be about 10 mm in FIG. When attempting to divide the substrate with the apparatus of FIG. 1 at such a distance, there is a problem that cracks and cracks are likely to occur from the dividing groove toward the substrate.

  The object of the present invention is to provide a high margin in the alignment of the silicon nitride ceramic sintered substrate, and to split the four ears from the silicon nitride ceramic sintered substrate to obtain a silicon nitride ceramic aggregate substrate. An object of the present invention is to provide a silicon nitride ceramic aggregate substrate manufacturing apparatus and a silicon nitride ceramic aggregate substrate manufacturing method capable of suppressing the occurrence of cracks.

The silicon nitride ceramic aggregate substrate manufacturing apparatus of the present invention includes a side break line formed along the outer edge from the outer edge of the silicon nitride ceramic sintered substrate along the outer edge, and an ear formed around the side break line. A base on which a silicon nitride ceramics sintered substrate having a portion is mounted;
An alignment mechanism for aligning the silicon nitride ceramic sintered substrate placed on the base with a distance L1 between the base and the side break line;
A pressing member that applies a load to the main surface of the silicon nitride ceramics sintered substrate and maintains a distance L2 from the side break line; and a punch member that applies a load to the ear portion. A punch mechanism for dividing the silicon nitride ceramic aggregate substrate and the ears from the silicon ceramic sintered substrate;
A transport mechanism for transporting the silicon nitride ceramic sintered substrate or the silicon nitride ceramic aggregate substrate to the base,
The distance L1 is a distance between the side surface of the base and the center of the side break line in a direction parallel to the main surface of the base, and is 1.0 to 5.0 mm.
The distance L2 is a distance between the side surface of the pressing member and the center of the side break line in a direction parallel to the main surface of the base, and is set to 0 to 10.0 mm.

  In the silicon nitride ceramic aggregate substrate manufacturing apparatus of the present invention, it is preferable that the alignment mechanism has a jig that abuts against an outer edge of the silicon nitride ceramic sintered substrate.

In the above-described silicon nitride ceramic aggregate substrate manufacturing apparatus of the present invention, the punch member is disposed at a distance L3 from the side break line when a load is applied to the ear portion.
The distance L3 is a distance between a location where the punch member contacts the ear portion and the center of the side break line in a direction parallel to the main surface of the base, and is 1.0 to 5.0 mm. It is preferable.

  In the silicon nitride ceramic aggregate substrate manufacturing apparatus of the present invention described above, the silicon nitride ceramic sintered substrate placed on the base has an angular break line in a direction inclined with the side break line at a corner where the side break line intersects. Is preferably formed.

The method for manufacturing a silicon nitride ceramic aggregate substrate according to the present invention includes a side break line formed along the outer edge from the outer edge of the silicon nitride ceramic sintered substrate along the outer edge, and an ear formed around the side break line. An arrangement step of placing a silicon nitride ceramic sintered substrate having a portion on a base;
A distance L1 of 1.0 to 5.0 mm between the side surface of the base and the center of the side break line in the direction parallel to the main surface of the base of the sintered silicon nitride ceramic substrate placed on the base. An alignment process for maintaining the position at
A load is applied to the main surface of the silicon nitride ceramic sintered substrate with a pressing member, and the direction between the side surface of the pressing member and the center of the side break line is 0 to 10 in the direction parallel to the main surface of the base. A dividing step of fixing the distance L2 of 0 mm, applying a load to the ear portion with a punch member, and dividing the silicon nitride ceramic aggregate substrate and the ear portion from the silicon nitride ceramic sintered substrate;
It is characterized by including.

  In the method for manufacturing a silicon nitride ceramic aggregate substrate of the present invention described above, it is preferable that in the positioning step, a jig is abutted against an outer edge of the silicon nitride ceramic sintered substrate to align the position.

  In the method for manufacturing a silicon nitride ceramic aggregate substrate of the present invention, when a load is applied by the punch member, the position where the punch member contacts the ear portion in a direction parallel to the main surface of the base, and It is preferable to maintain a distance L3 between 1.0 and 5.0 mm between the center of the side break line.

  In the method for manufacturing a silicon nitride ceramic aggregate substrate of the present invention, the silicon nitride ceramic sintered substrate placed on the base has an angular break line in a direction inclined with the side break line at a corner where the side break line intersects. It is preferable to have.

  According to the present invention, a silicon nitride ceramic aggregate substrate manufacturing apparatus having excellent productivity is provided by providing a high margin for the alignment of the silicon nitride ceramic sintered substrate. Moreover, when removing the ear | edge part, it became a manufacturing method by which generation | occurrence | production of the crack and the crack was suppressed in the silicon nitride ceramic aggregate substrate.

It is a top view which shows the outline of a silicon nitride ceramic sintered substrate. It is a top view which shows the outline of the alignment mechanism used for the manufacturing apparatus of this invention. It is a top view explaining the alignment which concerns on FIG. 2 by (3a)-(3d). It is a front view (partial sectional view) showing the outline of the manufacturing apparatus of the present invention. It is a side view (partial sectional view) of the manufacturing apparatus of FIG. It is an enlarged view which shows the outline of distance L1, L2 and L3. It is the schematic which shows the conveyance mechanism used for the manufacturing apparatus of FIG. (8a) is a silicon nitride ceramic aggregate substrate, (8b) is a silicon nitride ceramic aggregate substrate provided with a circuit board, and (8c) is a top view schematically showing the circuit board. It is a top view which shows the outline of the other alignment mechanism used for the manufacturing apparatus of this invention.

  The inventors have found defects (such as cracks and cracks) that occur in the silicon nitride ceramic aggregate substrate when aligning the silicon nitride ceramic sintered substrate and dividing the silicon nitride ceramic sintered substrate into the silicon nitride ceramic aggregate substrate and the ears. As a result of intensive studies on cracks and the like, the inventors have arrived at a manufacturing apparatus and a manufacturing method for a silicon nitride ceramic aggregate substrate according to the present invention.

  In the present invention, the silicon nitride ceramic sintered substrate is aligned, the distance L1 between the surface including the side surface of the base and the center of the side break line is within the range of 1.0 to 5.0 mm, and The distance L2 between the side surface and the center of the side break line is set within a range of 0 to 10.0 mm.

  By setting the distance L1 to 1.0 mm or more, a high alignment margin can be provided even for a sintered silicon nitride ceramic sintered substrate with dimensional variations. In addition, by setting the distance L1 to 5.0 mm or less, stress can be efficiently concentrated at the deepest part of the side break line, and generation of cracks from the side break line toward the silicon nitride ceramic aggregate substrate can be suppressed. . Moreover, it can suppress that the crack along a side break line generate | occur | produces in the silicon nitride ceramics aggregate substrate located inside a side break line. More preferably, the distance L1 is set to 1.0 to 4.0 mm.

  By setting the distance L2 to be 0 mm or more, it is possible to suppress the lift of the end portion of the substrate from the base that occurs when the punch member is pushed in, and it is possible to suppress a decrease in positional accuracy of the side break line with respect to the side surface of the base. Further, by setting the distance L2 to 10.0 mm or less, it is possible to suppress lifting of the substrate end portion from the base that occurs when the punch member is pushed in, and to suppress substrate cracking along the side break line due to bending. The difference between the distances L1 and L2 is preferably small. For example, the absolute value of (L2−L1) is less than 5 mm.

  In the present invention, it is even more preferable that the distance L3 between the location where the punch member contacts the ear and the center of the side break line is in the range of 1.0 to 5.0 mm. When the distance L3 is 1.0 mm or more, a high alignment margin can be provided. Further, when the distance L3 is 5.0 mm or less, it contributes to suppressing cracking of the ears other than the side break line when dividing the silicon nitride ceramics aggregate substrate and the ears.

  In the present invention, alignment can be performed to provide a high margin for the distances L1 and L2. A simple alignment is possible in which a jig is abutted against the outer edge of the silicon nitride ceramic sintered substrate. Further, the present invention is suitable for a manufacturing apparatus that automatically performs division.

  Furthermore, in the present invention, when the corner break line is formed on the silicon nitride ceramic sintered substrate, the occurrence of cracks and cracks can be suppressed particularly at the corners of the silicon nitride ceramic aggregate substrate.

  Embodiments of the present invention will be described below with reference to the drawings, but the present invention is not necessarily limited thereto. The description regarding each embodiment is applicable also to other embodiment unless there is particular notice.

A silicon nitride ceramic sintered substrate 1 used in the manufacturing apparatus or manufacturing method of the present invention will be described with reference to FIG. A silicon nitride ceramic sintered substrate 1 shown in FIG. 1 is formed by using, for example, a carbon dioxide laser (CO ₂ laser), a fiber laser or the like as the sintered silicon nitride ceramic sintered substrate. A plurality of scribe holes 13a (non-penetrating holes) are formed along the outer edge 10 from the inner side to the break line 13 (hereinafter referred to as a side break line) by dividing lines connecting the centers of the scribe holes. (Scribe hole forming step). Hereinafter, the “scribe hole” refers to a hole that does not penetrate the substrate (non-through hole). The outer side of the side break line 13 is the ear part 11.

  Furthermore, by continuously forming a through hole from a position protruding by L10 in a direction inclined with the side break line 13 (for example, a direction inclined by 45 °) at each corner where the side break line 13 intersects. In other words, a slit penetrating in the thickness direction of the silicon nitride ceramic sintered substrate is formed so as to chamfer the corner, thereby forming the corner break line 14 (through hole forming step (more specifically, slit forming step)). Here, the “slit” refers to an elongated notch that penetrates the substrate from one surface to the other surface. “Through hole” refers to a hole penetrating the substrate from one surface to the other surface. The slit is formed by connecting a plurality of through holes, and constitutes a corner break line by a dividing line connecting the centers of the through holes. A portion surrounded by the intersecting side break line 13 and the corner break line 14 corresponds to a triangular corner portion 15 (when the ear portion is removed later, the corner portion 15 is separated in a state attached to the ear portion 11. Will be part). In the main surface 1a of the silicon nitride ceramic sintered substrate, a portion surrounded by the four side break lines 13 and the four corner break lines 14 corresponds to the silicon nitride ceramic aggregate substrate 12.

  The corner break line 14 preferably has a projection length L10 projecting from the ear portion 11 larger than the beam spot diameter of the laser used for forming the through hole and less than 3.5 mm. For example, as shown in FIG. 1, when the corner break line 14 is formed of a slit, if the protrusion length L10 is larger than the beam spot diameter of the laser, the slit is formed when the silicon nitride ceramic aggregate substrate and the ear are divided. Generation | occurrence | production of the burr | flash which generate | occur | produces in the cross | intersection part of an adjacent edge break line can be suppressed. Further, when the silicon nitride ceramic aggregate substrate and the ear portion are divided, the corner portion can be prevented from remaining in the chamfered portion. If there are burrs on the sides of the silicon nitride ceramic aggregate substrate, it is preferable to suppress the occurrence of burrs because there is a risk of displacement when alignment is performed on the sides in the subsequent copper circuit board forming step. Further, when the protrusion length L10 of the slit is 3.5 mm or more, when dividing the silicon nitride ceramics aggregate substrate and the ear portion, the ear portion is easily divided on the extension line of the slit, and the man-hour for the removal work is increased. In addition, the processing time becomes longer, which is uneconomical.

  Next, an alignment mechanism used in the manufacturing apparatus or manufacturing method of the present invention will be described with reference to FIG. FIG. 2 shows an alignment mechanism for aligning the silicon nitride ceramic sintered substrate 1 on the base 50. The L-shaped jig 51 supported by the linear drive device 52 and the linear drive device are shown. It has an L-shaped jig 51 'supported by 52'. L-shaped jigs 51 and 51 ′ are abutted against the diagonal portions of the silicon nitride ceramic sintered substrate 1 for alignment.

  As shown in FIG. 2, when the corner portion of the base 50 is chamfered to be a chamfered surface 50d (for example, 2 mm by C chamfering), one point of the corner portion of the base 50 abuts against the surface of the silicon nitride ceramic sintered substrate and the force It is possible to suppress the formation of cracks and cracks by concentrating. In order to bring the outer edge 10 of the silicon nitride ceramic sintered substrate 1 into close contact with the inner edge of the L-shaped jig, between the inner edges of the L-shaped jigs 51 and 51 ′, Each preferably has a recess 51a, 51a '.

  Next, the alignment sequence according to FIG. 2 will be described with reference to FIGS. 3 (3a) to (3d). As shown in the top view of FIG. 3 (3 a), L-shaped jigs 51, 51 ′ are arranged at a distance from the base 50 before the silicon nitride ceramics sintered substrate 1 is arranged. Subsequently, as shown in FIG. 3 (3 b), the silicon nitride ceramic sintered substrate 1 is moved to above the main surface 50 b of the base 50 using a transport mechanism (to be described later with reference to FIG. 7), and then the base 50 (Placement process).

  Subsequently, the L-shaped jig 51 is translated in the direction of the arrow by the linear drive device 52, and two edges 51b and 51c (adjacent inner edges. 3 (corresponding to one side surface) is pressed against two outer edges 10 (corresponding to two side surfaces in detail) of the silicon nitride ceramic sintered substrate 1, and is shown in FIG. 3 (3c) at a preset position. Thus, the L-shaped jig 51 is stopped and fixed (the lock is necessary). The two edges 51b and 51c inside the L-shaped jig 51 when locked are the reference for alignment.

  Subsequently, the L-shaped jig 51 ′ is translated by the linear drive device 52 ′ (the arrow corresponds to the moving direction), and the two edges 51 b ′ and 51 c ′ (inner side) of the L-shaped jig 51 ′ Are adjacent to the other two outer edges 10 of the silicon nitride ceramic sintered substrate 1 and kept pressed with a constant force (pressing and holding method). As a result, as shown in FIG. 3 (3 d), the L-shaped jigs 51 and 51 ′ are brought into contact with the diagonal portions of the silicon nitride ceramic sintered substrate, respectively, and are aligned. 2 (positioning step). At this time, in a direction parallel to the main surface 50b of the base, the distance L1 between the side surface 50a of the base and the center of the side break line is within a range of 1.0 to 5.0 mm (L1 will be described later with reference to FIG. 4). To do).

  Instead of the “continuous pressing method” described in FIG. 3D, when a predetermined reaction force is detected, the L-shaped jig 51 ′ is stopped and fixed (locked). Good.

  As shown in FIG. 3 above, the alignment mechanism for abutting one L-shaped jig (adjacent inner edge) against the adjacent outer edge of the silicon nitride ceramic sintered substrate uses two jigs. This is preferable because the structure can be simplified as compared with an alignment mechanism in which each is individually abutted against an adjacent outer edge.

  Next, in FIG. 4 (and FIG. 5), an apparatus for manufacturing a silicon nitride ceramic aggregate substrate using the above-described alignment mechanism (FIGS. 2 and 3) will be described. The manufacturing apparatus of FIG. 4 includes a plate-like base 50 supported by a base pillar 50p, supports the yoke 56 via a yoke 56 and a yoke support portion 56a, and linearly drives the yoke 56 up and down. A punch mechanism having a pillar device 57 is provided. The pillar device 57 and the base pillar 50p are provided on a common reference base 50g. On the bottom surface of the yoke 56, a punch plate (two short sides) having a punch surface 53a as a punch member 53 and a punch plate (two long sides) having a punch surface 54a as a punch member 54 are framed. It is provided in the shape. A plate-like pressing member 58 is supported on the bottom surface side of the yoke 56 through a rod 55a, a spring 55b, and a cylinder 55c in a region surrounded by the punch members 53 and 54. On the main surface 50b of the plate-like base 50, the silicon nitride ceramics sintered substrate 1 aligned with L-shaped jigs 51 and 51 'is placed.

  Subsequently, when the yoke 56 is lowered toward the base 50 in the manufacturing apparatus of FIG. 4, the silicon nitride ceramics sintered substrate 1 is sandwiched between the pressing member 58 and the main surface 50b of the base, and a load is applied. Fixed. At this time, in the direction parallel to the main surface 50b of the base, the distance L2 between the side surface 58a of the pressing member and the center of the side break line 13 is set in the range of 0 to 10.0 mm. When the yoke 56 is further lowered by utilizing the contraction of the spring 55b and the ear portion 11 and the punch surface 53a come into contact with each other, the portion where the punch surface 53a of the punch member 53 comes into contact with the ear portion 11 and the side break line 13 The distance L3 from the center of the lens is set in the range of 1.0 to 5.0 mm. In FIG. 4 (and FIG. 5), the thickness of the silicon nitride ceramics sintered substrate 1 is greatly emphasized for easy understanding.

  When the punch member is in contact with the ear portion at the surface, the distance L3 is the inner side of the surface of the punch member in the direction parallel to the main surface 50b of the base (the side that is in contact and closest to the side break line). It represents the distance from the center of the edge breakline. However, when the punch member is in contact with the ear portion by a line, it represents the distance between the line of the punch member (line contact portion) and the center of the side break line in the direction parallel to the main surface 50b of the base. To do.

  Subsequently, after the L-shaped jigs 51 and 51 ′ are returned to their original positions (that is, after being separated from the silicon nitride ceramic sintered substrate), when the yoke 56 is lowered, a pair of punch surfaces 53 a is formed. By pushing a pair of ears 11 (shorter ears) while applying a load, a tensile stress caused by bending acts in a direction perpendicular to the side breakline 13, and the side breakline 13 breaks. Ear 11 is separated. When the yoke 56 is further lowered and the other pair of ears 11 (longer ears) and the punch surface 54a come into contact with each other, the portion where the punch surface 54a of the punch member 54 comes into contact with the ear 11 and the side break The distance L3 from the center of the line 13 is also in the range of 1.0 to 5.0 mm. In addition, regarding the silicon nitride ceramics sintered substrate 1, the base 50 (the side surface 50a of the base), and the pressing member 58 (the side surface 58a of the pressing member) having the side break line 13, an outline of the relationship among the distance L1, the distance L2, and the distance L3 This is shown in the enlarged view of FIG. In FIG. 6, the side break line 13 is shown as a cut, and the bottom of the triangular cross section corresponds to the deepest portion 13b. The width direction of the side break line 13 is parallel to the main surface 50b or L1 of the base. The auxiliary line a corresponds to a line passing through the center of the side break line 13 in the width direction. The chamfered portion provided on the punch member 54 can be, for example, a C chamfer of about C1 to C10.

  Subsequently, when the yoke 56 is lowered, the pair of punch surfaces 54a applies a load while pushing the other pair of ears 11 (longer ears), so that the side break line 13 is broken and nitrided. Divided into a silicon ceramics aggregate substrate 12 and another pair of ears 11 (dividing step: more specifically, an ear portion dividing step). Only the silicon nitride ceramic aggregate substrate 12 is sandwiched between the pressing member 58 and the base 50. The ears 11 that have fallen down are collected using a collection shooter (slide: not shown). Subsequently, the yoke 56 is raised to sufficiently separate the pressing member 58 from the silicon nitride ceramic aggregate substrate 12. Subsequently, the silicon nitride ceramic aggregate substrate 12 can be taken out from the base 50 using a transport mechanism (to be described later with reference to FIG. 7). Using a method that divides the short ear and long ear separately and further suppresses the generation of cracks and cracks in the silicon nitride ceramic aggregate substrate compared to the method of pushing and dividing the four ears at the same time. it can. From the viewpoint of suppressing cracks, the load is preferably 600 N or less, for example. More specifically, 30N, 100N, etc. are mentioned.

  In FIG. 6, when the width of the ear portion is as small as 0.5 mm, for example, the width of the chamfered portion of the punch member 54 is increased (the chamfered portion is widened to the L3 side), and the surface of the chamfered portion is increased. It is preferable to push the ear 11 and break the side break line 13. If the chamfered portion is provided so that the chamfered portion hits the ear part at the time of division, even if the width of the ear part is changed, the bending state of the ear part becomes the same state, so the property of the cross section is made uniform, This is preferable for stable division.

  In the manufacturing apparatus shown in FIG. 4 (and FIG. 5), it is preferable that at least the material of the punch members 53 and 54 is plastic. This is because there is no possibility that metal contamination adheres to the silicon nitride ceramic aggregate substrate 12. The material of the base 50 and the pressing member 58 is also preferably plastic. It is more preferable to use a high-strength plastic (particularly polycarbonate) as the material of the punch member because it is difficult to wear. Also, a relatively soft material such as bakelite may be used as the material of the base 50 and the pressing member 58 so as not to damage the silicon nitride ceramic aggregate substrate.

  The change of the distance L1 can be dealt with by changing the base 50 to a different size, for example. The change in the distance L2 can be dealt with, for example, by exchanging the base 50 and the pressing member 58 with different dimensions. The change in the distance L3 can be dealt with, for example, by exchanging the punch members 53 and 54 with different punch surface dimensions or by changing the fixing positions of the punch members 53 and 54 in the yoke 56.

  Next, a transport mechanism for transporting a substrate for use in the manufacturing apparatus shown in FIG. 4 (and FIG. 5) will be described with reference to FIG. The transport mechanism for transporting a substrate according to FIG. 7 includes a transport arm 62, a support plate 61 provided below the end of the transport arm 62, and four suctions provided below the four corners of the support plate 61. A board 60 is provided. When the suction plate 60 is vacuumed by an intake pipe (not shown), the silicon nitride ceramic sintered substrate or the silicon nitride ceramic aggregate substrate can be adsorbed. The transfer arm 62 can be appropriately translated in the direction of the arrow in FIG. 7 or in the direction perpendicular to the paper surface by a driving device (not shown). In order to remove the ears in the manufacturing apparatus in FIG. The loaded silicon nitride ceramic sintered substrate can be taken out, moved, and placed on the base 50 (corresponding to the base in FIG. 4). Moreover, after removing the ear | edge part, a silicon nitride ceramic aggregate substrate can be taken out from on the base 50, and can be sent to a subsequent process. Here, “transport” includes supplying the substrate to the base or discharging the substrate from the base. The base 50, the base pillar 50p, and the reference base 50g in FIG. 7 are the same as those shown in FIG. 4 (and FIG. 5), but other configurations in FIG. 4 (and FIG. 5) are not shown in FIG. Absent.

  When the silicon nitride ceramic aggregate substrate 12 is taken out of the base of the manufacturing apparatus of FIG. 4 using the transport mechanism shown in FIG. 7, the main surface 50b of the base is blown with an air or is swept with a brush or the like. Is preferred. When the silicon nitride ceramic sintered substrate is divided into minute pieces or particles and falls on the main surface 50b of the base, tilt or misalignment occurs when the next silicon nitride ceramic sintered substrate is divided on the base. This is because there is a fear.

  Next, a state in which a circuit board is formed using the silicon nitride ceramic aggregate substrate 12 obtained by removing the ears with the manufacturing apparatus according to FIG. 4 will be described with reference to FIG. FIG. 8 (8 a) shows the silicon nitride ceramic aggregate substrate 12, which has a rectangular shape with four corners chamfered. In the copper circuit board forming step, a plurality of copper circuit boards 16 are joined to one surface of the silicon nitride ceramic aggregate substrate 12 (see FIG. 8 (b)), and a plurality of copper heat sinks are joined to the other face. (Not shown), the silicon nitride ceramics aggregate substrate 12a to which the circuit board and the heat sink are joined is obtained. Subsequently, second break lines 18 and 18 ′ by second scribe holes are formed on the surface of the silicon nitride ceramic aggregate substrate 12 a on the side to which the circuit board 16 is bonded. Subsequently, the silicon nitride ceramic aggregate substrate 12 is divided along the second break lines 18 and 18 ′, so that the circuit formation portion (corresponding to the circuit substrate 20) and the edge portion 17 are separated from each other. Get 20. Here, as shown in FIG. 8 (8 c), the circuit board 20 includes a copper circuit board 16, a copper heat radiating plate (not shown), and a ceramic substrate part 19.

  In the present invention, for example, as shown in FIG. 1, the silicon nitride ceramics sintered substrate is chamfered so that the corners are chamfered in a direction inclined with the side breaklines 13 at the corners where the side breaklines 13 intersect. The corner break line 14 is preferably formed. When the corner break line is formed, when the silicon nitride ceramic sintered substrate 1 is bent and divided into the silicon nitride ceramic aggregate substrate 12 and the ear portion 11, cracks and chips are generated particularly at the four corners of the silicon nitride ceramic aggregate substrate. This is because it can be suppressed. In the case where the corner break line is not provided, it has been confirmed that when the silicon nitride ceramic aggregate substrate 12 and the ear portion 11 are divided, there is an increase in defects related to corner burr and corner chipping.

  Further, it is preferable that the corner break line is easier to break than the side break line because stress concentration is further eased at the four corners of the silicon nitride ceramic aggregate substrate. For example, the depth of the corner break line is greater than the depth of the side break line. More preferably, for example, the side break line does not penetrate the substrate in the thickness direction, but the corner break line penetrates the substrate in the thickness direction. At this time, for example, a corner break line is formed by a slit formed by connecting a plurality of through holes. This is because, since the slit penetrates the substrate, the stress concentration is particularly relaxed at the corners of the four corners of the silicon nitride ceramic aggregate substrate, thereby contributing to suppression of cracks and cracks.

  For example, when the thickness of the silicon nitride ceramic sintered substrate is 0.32 mm, the depth of the side break line is preferably 80 to 300 μm and more preferably 100 to 250 μm.

  The corner break line formed at the corner where the side break line intersects, for example, has a width of 30 to 200 μm, for example, a length of 2.8 to 8.4 mm. The width of the corner break line is more preferably 20 to 150 μm, still more preferably 30 to 100 μm. The length of the corner break line is more preferably 3.0 to 8.0 mm, and still more preferably 3.5 to 7.5 mm.

  The corner break line is inclined by, for example, 30 ° to 60 ° with respect to the side break line. More specifically, it is preferable to tilt the substrate by 45 ° with respect to the side break line because the area of the substrate can be used effectively without waste.

  The above-mentioned silicon nitride ceramic sintered substrate has a size of, for example, 100 mm or more in the vertical and horizontal directions. A preferable size is, for example, 120 mm × 120 mm or more, and a more preferable size is, for example, 140 mm × 140 mm or more. Furthermore, the size may have, for example, a square with a side of 250 mm or a shape smaller than this. The silicon nitride ceramic sintered substrate and the silicon nitride ceramic aggregate substrate have a thickness of 0.2 mm to 1.0 mm, for example. More specifically, the thickness is set to 0.25 mm to 0.65 mm, for example.

  In the silicon nitride ceramic sintered substrate, the width of the ear portion is, for example, 0.5 to 8.0 mm. The reason why the width of the ear portion is set to 8.0 mm or less is to reduce the amount of material thrown away. The reason why the width of the ear is 0.5 mm or more is to suppress the generation of burrs. More specifically, the width of the ear is, for example, 2.0 to 6.0 mm, and more specifically, 3.0 to 5.0 mm.

The above silicon nitride ceramic sintered substrate and silicon nitride ceramic aggregate substrate have a fracture toughness value of, for example, 5.0 MPa · m ^1/2 or more. More specifically, the fracture toughness value is set to, for example, 5.0 to 7.5 MPa · m ^1/2 .

  In FIG. 9, another positioning mechanism used in the manufacturing apparatus or manufacturing method of the present invention will be described. FIG. 9 shows an L-shaped jig 51 supported by the linear drive device 52 of FIG. 2, a cylindrical jig 91a supported by the linear drive device 92, and a support member 91d via the linear drive device 92. The combination with the supported columnar columnar jigs 91b and 91c corresponds to an exchanged configuration. Other configurations are the same as those in FIG. An L-shaped jig 51 ′ is abutted against the upper right diagonal portion of the silicon nitride ceramics sintered substrate 1, and a cylindrical jig 91 a is projected to the outer edge (the short side on the left side) of the silicon nitride ceramics sintered substrate 1. Then, the cylindrical jigs 91b and 91c are abutted against the outer edge (lower long side) of the silicon nitride ceramic sintered substrate 1 for alignment. Even if the silicon nitride ceramic sintered substrate has a shape immediately after sintering and is not necessarily an accurate rectangle, a cylindrical jig 91a that drives in the x direction, and cylindrical jigs 91b and 91c that drive in the y direction, Therefore, the alignment accuracy of the abutting of the silicon nitride ceramic sintered substrate on the base 50 can be increased.

  Hereinafter, the present invention will be specifically described based on examples. In addition, this invention is not necessarily limited to the following Example.

(Example)
As a raw material for forming silicon nitride ceramics, a silicon nitride powder is used as a main raw material, and 2% by mass of MgO and 3% by mass of Y ₂ O ₃ are used as sintering aids. And sintered at a maximum temperature of 1850 ° C. and a holding time of 5 hours to produce a silicon nitride ceramic sintered substrate having a thickness of 0.32 mm, a length of 150 mm and a width of 200 mm. Subsequently, in order to obtain the substrate of FIG. 1, the side break line 13 by the scribe holes 13 a is formed along the outer edge 10 from the outer edge 10 to the inner side of the sintered silicon nitride ceramic sintered substrate using a carbon dioxide laser. (Scribe hole forming step). The scribe holes 13a have a maximum diameter of 50 μm, a depth of 150 μm, and a pitch of 100 μm on the substrate surface, and side break lines 13 formed by the scribe holes 13a are formed along each of the four sides. The width of the ear part 11 was set to the value shown in Table 1 later.

  Subsequently, using a carbon dioxide laser (output: 100 W), the laser beam spot is scanned once, and the side break lines 13 and 45 are respectively formed at the corners (four places) where the side break lines 13 intersect with the scribe holes 13a. A slit formed by connecting through holes is formed as a corner break line 14 by continuously forming through holes from a position protruding by L10 in the direction of inclination (slit forming step). 1 silicon nitride ceramics sintered substrate 1 was obtained.

Detailed conditions were as follows.
Laser beam spot diameter = 70 μm
Processing speed = 15mm / s
Slit protrusion length L10 = 0.7mm
Overall length of slit = 4.2mm
Slit width on substrate surface = 0.1 mm

  Next, using the manufacturing apparatus (FIG. 4) provided with the alignment mechanism (FIG. 2) and the transport mechanism (FIG. 7), the silicon nitride ceramic sintered substrate 1 is connected to the silicon nitride ceramic aggregate substrate 12 and the ear portion 11. Divided. As conditions, the load applied to the ear by the punch member is 30 N, the speed at which the punch member divides the ear by the side break line is 10 mm / s, and the width of the ear, the distances L1, L2, and L3 are shown in Table 1. As shown. According to one embodiment, 500 silicon nitride ceramic sintered substrates are divided, and the silicon nitride ceramic aggregate substrate 12 is referred to as (a) corner burrs, (b) corner chips, and (c) edge chips and cracks. The presence / absence of defects was examined, and the occurrence rate (%) of each was determined (see Table 1). Here, the crack indicates that a part of the edge of the silicon nitride ceramic aggregate substrate is separated by the occurrence of a curved crack along the side break line. Edge chipping means that the separation volume is smaller than “cracking”, and the corners of the edge (the edge between the main surface and the side surface) are separated.

  In Examples 1 to 25, as shown in Table 1, (a) corner burr, (b) corner chipping, and (c) edge chipping and cracking do not occur, and re-alignment is unnecessary. there were. That is, it was a favorable result suitable for mass production.

(Comparative example)
1 except that the width of the ear portion and the distances L1, L2 and L3 are set as shown in Table 1, the silicon nitride ceramics aggregate substrate and the ears of the silicon nitride ceramics sintered substrate of FIG. Divided into parts. In Comparative Examples 1 to 7, as shown in Table 1, at least one defect among (a) corner burr, (b) corner chip, and (c) edge chip and crack occurred and is suitable for mass production. It was judged that it was not. Among these, in Comparative Examples 1 to 3, misalignment occurred when the silicon nitride ceramic sintered substrate was placed on the base 50. As a result, defects such as cracks occurred frequently. In Comparative Examples 4 to 7, the above-described crack was generated in the silicon nitride ceramic aggregate substrate. In the comparative example, even if L1, L2, and L3 are close values, the ratio of burrs and chips may be different depending on the accuracy of abutment.

1: silicon nitride ceramic sintered substrate, 1a: main surface of silicon nitride ceramic sintered substrate,
10: Outer edge, 11: Ear part, 12: Silicon nitride ceramic aggregate substrate,
12a: a silicon nitride ceramics aggregate substrate joined with a circuit board and a heat sink;
13: Side break line, 13a: Scribe hole, 13b: Deepest part,
14: Corner break line, 15: Triangular corner,
16: Copper circuit board, 17: Edge, 18, 18 ': Second break line,
19: Ceramic substrate part, 20: Circuit board,
50: Base, 50a: Side surface of the base, 50b: Main surface of the base,
50d: chamfered surface, 50g: reference table, 50p: base pillar,
51, 51 ′: L-shaped jig, 51a, 51a ′: dent,
51b, 51b ′: edge, 51c, 51c ′: edge,
52, 52 ': linear drive device,
53: Punch member, 53a: Punch surface,
54: Punch member, 54a: Punch surface,
55a: Rod, 55b: Spring, 55c: Cylinder,
56: Yoke, 56a: Yoke support part, 57: Pillar device,
58: Presser member, 58a: Side surface of presser member,
60: Suction plate, 61: Support plate, 62: Transfer arm,
91a: cylindrical jig, 91b, 91c: cylindrical jig,
91d: support member, 92, 92 ': linear drive device

Claims (8)

A silicon nitride ceramic sintered substrate having a side break line formed along the outer edge and an ear formed around the side break line at a position inside the outer edge of the silicon nitride ceramic sintered substrate is placed. Base and
An alignment mechanism for aligning the silicon nitride ceramic sintered substrate placed on the base with a distance L1 between the base and the side break line;
A pressing member that applies a load to the main surface of the silicon nitride ceramics sintered substrate and maintains a distance L2 from the side break line; and a punch member that applies a load to the ear portion. A punch mechanism for dividing the silicon nitride ceramic aggregate substrate and the ears from the silicon ceramic sintered substrate;
A transport mechanism for transporting the silicon nitride ceramic sintered substrate or the silicon nitride ceramic aggregate substrate to the base,
The distance L1 is a distance between the side surface of the base and the center of the side break line in a direction parallel to the main surface of the base, and is 1.0 to 5.0 mm.
The distance L2 is a distance between the side surface of the pressing member and the center of the side break line in a direction parallel to the main surface of the base, and is 0 to 10.0 mm. Assembly board manufacturing equipment.   2. The apparatus for producing a silicon nitride ceramic aggregate substrate according to claim 1, wherein the alignment mechanism includes a jig that abuts against an outer edge of the silicon nitride ceramic sintered substrate. The punch member is disposed at a distance L3 from the side break line when a load is applied to the ear portion,
The distance L3 is a distance between a location where the punch member contacts the ear portion and the center of the side break line in a direction parallel to the main surface of the base, and is 1.0 to 5.0 mm. The apparatus for manufacturing a silicon nitride ceramic aggregate substrate according to claim 1 or 2,   4. The silicon nitride ceramic sintered substrate placed on the base has an angular break line formed in a direction inclined with the side break line at a corner where the side break line intersects. An apparatus for producing a silicon nitride ceramics aggregate substrate according to any one of the above. A silicon nitride ceramic sintered substrate having a side breakline formed along the outer edge at a position inside the outer edge of the silicon nitride ceramic sintered substrate, and an ear formed around the side breakline. An arrangement process to be placed on,
A distance L1 of 1.0 to 5.0 mm between the side surface of the base and the center of the side break line in the direction parallel to the main surface of the base of the sintered silicon nitride ceramic substrate placed on the base. An alignment process for maintaining the position at
A load is applied to the main surface of the silicon nitride ceramic sintered substrate with a pressing member, and the direction between the side surface of the pressing member and the center of the side break line is 0 to 10 in the direction parallel to the main surface of the base. A dividing step of fixing the distance L2 of 0 mm, applying a load to the ear portion with a punch member, and dividing the silicon nitride ceramic aggregate substrate and the ear portion from the silicon nitride ceramic sintered substrate;
A method for producing a silicon nitride ceramic aggregate substrate, comprising:   6. The method of manufacturing a silicon nitride ceramic aggregate substrate according to claim 5, wherein in the alignment step, a jig is abutted against an outer edge of the silicon nitride ceramic sintered substrate to align the position.   When a load is applied by the punch member, in a direction parallel to the main surface of the base, a space between a position where the punch member contacts the ear portion and the center of the side break line is 1.0 to 5. The method of manufacturing a silicon nitride ceramic aggregate substrate according to claim 5 or 6, wherein the distance L3 is kept at 0 mm. The silicon nitride ceramics sintered substrate placed on the base has an angular break line in a direction inclined with the side break line at a corner where the side break line intersects. A method for producing a silicon nitride ceramic aggregate substrate according to any one of the above.

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