JP2016534226A - 水素製造装置のための活性層/膜の配列、および多孔質集電体に好適な前記配列を含む接合体、およびその配列の製造方法 - Google Patents
水素製造装置のための活性層/膜の配列、および多孔質集電体に好適な前記配列を含む接合体、およびその配列の製造方法 Download PDFInfo
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- 239000012528 membrane Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 239000001257 hydrogen Substances 0.000 title claims abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 13
- 239000002245 particle Substances 0.000 claims abstract description 117
- 239000003054 catalyst Substances 0.000 claims abstract description 42
- 239000010936 titanium Substances 0.000 claims description 51
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 49
- 229910052719 titanium Inorganic materials 0.000 claims description 48
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 28
- 229910000457 iridium oxide Inorganic materials 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 239000011148 porous material Substances 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 9
- 229920000557 Nafion® Polymers 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 4
- 229920006362 Teflon® Polymers 0.000 claims description 3
- 238000007731 hot pressing Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000000887 hydrating effect Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 230000006870 function Effects 0.000 description 18
- 230000008859 change Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 229910000510 noble metal Inorganic materials 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 102100034256 Mucin-1 Human genes 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005868 electrolysis reaction Methods 0.000 description 6
- 238000002047 photoemission electron microscopy Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229920001483 poly(ethyl methacrylate) polymer Polymers 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000010411 electrocatalyst Substances 0.000 description 5
- 239000011532 electronic conductor Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 102100025532 Male-enhanced antigen 1 Human genes 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000010349 cathodic reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000003014 ion exchange membrane Substances 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007415 particle size distribution analysis Methods 0.000 description 1
- 238000005325 percolation Methods 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008521 reorganization Effects 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(IV) oxide Inorganic materials O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
- C25B9/17—Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof
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Abstract
Description
− 使用される材料は、系の抵抗(オーム抵抗および界面抵抗で構成される)を制限するために良好な電子伝導体である必要があり;
− これらの材料は、電解条件下で安定である必要があり(酸性媒体、電位に対する安定性);
− 触媒材料は一般に貴金属であるため、したがってそれらは非常に高価であり、PEM水電解技術を実施可能にするための使用量を減少させることが重要である。
− より卑であるが、イリジウムまたはルテニウムと組み合わせると安定となる元素から構成されるバイメタルまたはトリメタル材料の製造(Xu Wu,Jyoti Tayal,Suddhasatwa Basu,Keith Scott,Nano−crystalline RuxSn1−xO2 powder catalysts for oxygen evolution reaction in proton exchange membrane water electrolysers,International Journal of Hydrogen Energy,36,no.22,2011,14796−14804);
− 触媒担体の探索(カソードに使用される炭素と同様のもの):この担体は化学的に安定であり良好な電子伝導体である必要がある。従来検討された担体の中では、特に以下のものを挙げることができる:
○ 亜酸化チタン(TiO2−x)、特に特許米国特許第5,173,215号明細書、“Conductive titanium suboxide particulates”に記載のもの。その安定性は、あまり研究されていないが、PEM水電解に使用される動作電位において急速に再酸化して非伝導性TiO2となる;
○ ATO:アンチモンドープ酸化スズ(Marshall,A.T.,Haverkamp,R.G.,Electrocatalytic activity of IrO2−RuO2 supported on Sb−doped SnO2 nanoparticles,2010,Electrochimica Acta,55(6),pp.1978−1984)。
− 触媒粒子と、担体粒子と呼ばれる粒子とを含む活性層であって、担体粒子のサイズが前記活性層の厚さよりも大きい活性層を前記膜上に堆積するステップと;
− こうして形成された膜電極接合体を水和させるステップと
を含むことを特徴とする方法である。
− Teflon(登録商標)支持体上にインクを吹き付けるステップと;
− イオン交換可能な前記膜上にホットプレスにより転写するステップと
を含む。
− IrO2粒子を含む活性層の場合;および
− 本発明によるIrO2粒子およびチタン担体粒子を含む活性層であって、前記担体粒子が活性層から突出する活性層の場合
の電解セル中での使用が意図された接合体の比較試験を行った。
− 低電流密度(図4a)において0.25mg・cm−2未満のIrO2の使用量を有するアノード(この閾値使用量の由来は後述する);
− 高電流密度(図4b)において0.5mg・cm−2未満のIrO2の使用量のアノード
でセル電圧が低下する。
チタン粒子のサイズによって、それらの活性層中での作用が決定されるため、チタン粒子のサイズには特に注意を払うべきである:
・チタン粒子の直径が電極の厚さを超える場合、これらの粒子は、活性層から突出し、集電体の細孔中に組み込まれることが可能となる。活性層/集電体の電気的接触が改善され(図4c)、それによってより高い電流密度におけるセル電圧が低下する(図4b)。さらに、これらの大きなチタン粒子は集電体の中継部分として機能し、それによって活性層の厚さにおける伝導を改善することができる。したがってこれらの粒子の効果は、表面伝導の改善および体積伝導の改善の二重の効果となる;
・チタン粒子の直径が電極の厚さよりも小さい場合、一部のチタン粒子は酸化イリジウムによって覆われうる。水の接近はチタン粒子によって遮断され、これは、下に位置する酸化イリジウム粒子が、集電体に接触する酸化イリジウム粒子よりも活性が低くなることを意味し、利用可能な活性表面が減少し、低電流密度におけるセル電圧が増加する(図4a)。
− 高価な触媒粒子の少ない使用量;
− 低いセル電圧;
− 良好な伝導性;
− 良好なエージング
を有する最適な性能が得られることを実証した。
図7aおよび7bは、作製中に予備水和を行わない接合体および予備水和が行われる接合体に対して行った試験に関するものである。より具体的には、図7aは、IrO2/Tiを主成分とする活性層を用いた場合の、電流密度の関数としての、セル中に乾燥状態で組み立てられるMEAのセル電圧の変化を示している。セル電圧は経時により急速に低下する。図7bは、12時間の水和後のIrO2/Tiアノードを用いたMEAの1A・cm−2におけるセル電圧を示しており、経時による安定性を示している。
第1の作業中に、インクが製造される。このために、触媒および担体粒子の粉末を、脱イオン水およびイソプロパノールの溶媒と、Nafion(登録商標)であってよい10重量%のアイオノマーとの中に分散させる。
Claims (12)
- 水素製造装置中に組み込まれることが意図された活性層/膜接合体であって、前記接合体は、イオン交換可能な膜に接触する活性層を含み、前記活性層は、触媒粒子と、担体粒子と呼ばれる粒子とを含む、活性層/膜接合体において、前記担体粒子のサイズは前記活性層の厚さよりも大きく、そのため、前記担体粒子は、前記膜に接触する表面とは反対側の表面において前記活性層から突出することを特徴とする活性層/膜接合体。
- 前記触媒粒子がイリジウムまたは酸化イリジウムを主成分とする粒子であることを特徴とする請求項1に記載の活性層/膜接合体。
- 前記担体粒子がチタン粒子であることを特徴とする請求項1または2に記載の活性層/膜接合体。
- 前記担体粒子が1.2ミクロンを超えるサイズを有し、前記活性層の前記厚さが1ミクロン程度であることを特徴とする請求項1〜3のいずれか一項に記載の活性層/膜接合体。
- 前記膜がNafion(登録商標)型の膜であることを特徴とする請求項1〜4のいずれか一項に記載の活性層/膜接合体。
- 前記活性層の触媒使用量が約0.3mg/cm2未満であることを特徴とする請求項1〜4のいずれか一項に記載の活性層/膜接合体。
- 請求項1〜6のいずれか一項に記載の活性層/膜接合体と集電体とを含むユニットであって、前記活性層から突出する前記担体粒子が前記表面において前記集電体の細孔中に入り込むような多孔度で前記集電体が細孔を有する、ユニット。
- 前記集電体が多孔質チタン材料であることを特徴とする請求項7に記載のユニット。
- 前記多孔質集電体がグリッドの接合体であることを特徴とする請求項7に記載のユニット。
- 請求項1〜6のいずれか一項に記載の接合体の製造方法において、
− 触媒粒子と、担体粒子と呼ばれる粒子とを含む活性層であって、前記担体粒子のサイズが前記活性層の厚さよりも大きい活性層を前記膜上に堆積するステップと;
− こうして形成された膜電極接合体を水和させるステップと
を含むことを特徴とする方法。 - 前記活性層の製造が、前記膜に加えられるインクを製造するステップを含み、前記インクが、触媒粒子および担体粒子の粉末と、Nafion(登録商標)と、水およびアルコールの混合物とを含むことを特徴とする請求項10に記載の接合体の製造方法。
- − Teflon(登録商標)支持体上に前記インクを吹き付けるステップと;
− イオン交換可能な前記膜上にホットプレスにより転写するステップと
を含むことを特徴とする請求項11に記載の接合体の製造方法。
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