JP2016219779A - Light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device in which, even when a lens array is mounted while being slightly rotated from a predetermined direction, a significant deviation hardly occurs in a positional relationship between a light source and a lens section and, consequently, an intensity distribution of light emitted from the lens array hardly changes.SOLUTION: A light emitting device includes a substrate, a lens array having a plurality of lens sections 22 in a matrix, and a plurality of semiconductor laser elements 30 disposed on the substrate. Each of the semiconductor laser elements emits a respective laser beam. Each laser beam has a beam shape with a greater width in a column direction than in a row direction on a light incident surface of each of the plurality of lens sections. The plurality of lens sections have an inter-vertex distance in the row direction which is smaller than both a maximum outer diameter E of each of the lens sections, and an inter-vertex distance in the column direction. A curvature of the lens sections in the row direction is the same as that of the lens sections in the column direction.SELECTED DRAWING: Figure 1A

Description

  The present disclosure relates to a light emitting device.

  A light source device that collimates light emitted from a plurality of light sources using a collimating lens array is known (see Patent Document 1).

JP 2014-102367 A

  However, in the conventional light source device, each lens element constituting the collimating lens array has a plurality of curvatures according to the cross-sectional shape of the laser light incident on each lens element. For this reason, only by rotating the collimating lens array slightly from a predetermined direction, a large shift occurs in the positional relationship between the light source and the lens element, and the intensity distribution of the light emitted from the collimating lens array changes. There is a fear.

  The above problem can be solved by, for example, the following means. A light emitting device comprising a base, a lens array having a plurality of lens portions in a matrix, and a plurality of semiconductor laser elements arranged on the base, wherein the plurality of semiconductor laser elements respectively emit laser light. Each laser beam has a beam shape whose width is wider in the column direction than in the row direction at each light incident surface of the plurality of lens units, and the plurality of lens units has a maximum outer diameter of each lens unit. A light emitting device having a vertex distance in the row direction smaller than any of the vertex distances in the column direction and having the same curvature in the row direction and the column direction.

  According to the above light-emitting device, even when the lens array is mounted by being slightly rotated from a predetermined direction, the positional relationship between the light source and the lens portion is not likely to be greatly shifted, and the light emitted from the lens array is not affected. A light-emitting device in which the intensity distribution is hardly changed can be provided.

1 is a schematic plan view of a light emitting device according to Embodiment 1. FIG. It is AA sectional drawing in FIG. 1A. It is BB sectional drawing in FIG. 1A. It is CC sectional drawing in FIG. 1A. It is a typical top view of a base. It is DD sectional drawing in FIG. 2A. It is EE sectional drawing in FIG. 2A. It is a schematic plan view of a lens array. It is FF sectional drawing in FIG. 3A. It is GG sectional drawing in FIG. 3A. It is a HH sectional view in Drawing 3A. It is a typical top view of the semiconductor laser element arrange | positioned on a base | substrate. It is II sectional drawing in FIG. 4A. It is JJ sectional drawing in FIG. 4A. It is a figure which expands and shows the part enclosed with the broken line in FIG. 4C. It is a schematic plan view of a sealing member. It is KK sectional drawing in FIG. 5A. It is LL sectional drawing in FIG. 5A. 6 is a schematic plan view of a light emitting device according to Embodiment 2. FIG. It is MM sectional drawing in FIG. 6A. It is NN sectional drawing in FIG. 6A. It is OO sectional drawing in FIG. 6A. 6 is a schematic plan view of a light emitting device according to Embodiment 3. FIG. 6 is a schematic plan view of a light emitting device according to Embodiment 4. FIG.

[Light Emitting Device According to Embodiment 1]
1A is a schematic plan view of a light emitting device according to Embodiment 1. FIG. 1B is a cross-sectional view taken along line AA in FIG. 1A, FIG. 1C is a cross-sectional view taken along line BB in FIG. 1A, and FIG. 1D is a cross-sectional view taken along line CC in FIG. In FIG. 1A, in order to facilitate understanding, the semiconductor laser element 30 and the like disposed below the upper left lens unit are shown transparently. As shown in FIGS. 1A to 1D, the light emitting device 1 according to Embodiment 1 includes a base 10, a lens array 20 having a plurality of lens portions 22 in a matrix, and a plurality of semiconductor lasers arranged on the base 10. A plurality of semiconductor laser elements 30 each emitting a laser beam, and each laser beam has a beam shape whose width is wider in the column direction than in the row direction. In each light incident surface LA, the plurality of lens portions 22 have a vertex-to-vertex distance PX in the row direction that is smaller than either the maximum outer diameter E of the individual lens portions 22 or the column-to-vertex distance PY. The light emitting device has the same curvature in the row direction and the column direction. Hereinafter, it demonstrates in order.

(Substrate 10)
FIG. 2A is a schematic plan view of the substrate. 2B is a DD cross-sectional view in FIG. 2A, and FIG. 2C is an EE cross-sectional view in FIG. 2A. As shown in FIGS. 2A to 2C, the base body 10 includes, for example, a base portion 12, a side wall 14 protruding from the base portion 12, and a concave portion 10 a formed by the base portion 12 and the side wall 14. The base 12 has a convex portion 12a, and the convex portion 12a is formed in the concave portion 10a. If the base portion 12 having such a convex portion 12a is used, the warpage of the base portion 12 that may be caused by the base body 10 having the concave portion 10a (this warp is likely to occur particularly when the base portion 12 and the side wall 14 are made of different materials. ) Can be suppressed, and mounting of the semiconductor laser element 30 and the like on the base 12 is facilitated. Further, by arranging members such as the semiconductor laser element 30 on the convex portion 12a, these members can be brought close to the lens array 20, so that the laser light on the light incident surface LA of the lens array 20 (lens portion 22). It is also possible to suppress the spread of. In addition, the shape and thickness of the base | substrate 10, the base part 12, and the side wall 14 are not specifically limited, For example, in addition to the member which has the recessed part 10a, the base | substrate 10 has flat member (example: side wall 14). It is also possible to use a member that does not have a base 12 and does not have.

  For the base body 10 (base portion 12, side wall 14), for example, a metal material such as iron, an iron alloy, or copper, a ceramic material such as AlN, SiC, or SiN, or a material combining these materials can be used.

  The substrate 10 is provided with wiring 90 (for example, leads) for electrically connecting the light emitting device 1 to the outside. The wiring 90 may be provided on any of the outer circumferences of the light emitting device 1, but is preferably provided on the upper surface or the side surface of the substrate 10. That is, the wiring 90 is preferably not provided on the lower surface of the base body 10. In this way, since the entire lower surface of the substrate 10 can be used as a mounting surface, even when a plurality of semiconductor laser elements 30 serving as heat sources are arranged on one substrate 10 as in the present disclosure, A good light-emitting device can be provided. In the case where the wiring 90 is provided on the side wall 14 of the substrate 10, the height of the side wall 14 is required to be a certain level or higher. Etc. are arranged away from the lens array 20. However, if the base 12 having the convex portions 12a described above is used, the semiconductor laser element 30, the mirror 50, and the like can be arranged close to the lens array 20 (lens portion 22) even in such a case.

(Lens array 20)
FIG. 3A is a schematic plan view of the lens array. 3B is a cross-sectional view taken along line FF in FIG. 3A, FIG. 3C is a cross-sectional view taken along line GG in FIG. 3A, and FIG. 3D is a cross-sectional view taken along line HH in FIG. As illustrated in FIGS. 3A to 3D, the lens array 20 includes a plurality of lens portions 22 and connection portions 24. Each lens portion 22 has a light incident surface LA and a light exit surface LB, and each laser beam incident on the light entrance surface LA of each lens portion 22 is refracted and is emitted from the light exit surface LB of each lens portion 22. Emitted. The connection unit 24 connects the lens units 22 adjacent in the column direction (Y direction in FIG. 1). The lens array 20 can also be configured with only the lens portion 22. In this case, for example, the lens units 22 are directly connected to each other without the connection unit 24 interposed therebetween. The lens array 20 (lens portion 22 and connection portion 24) can be formed using a light-transmitting material such as glass or synthetic quartz.

(Multiple lens units 22)
The plurality of lens units 22 are provided in a matrix of m rows and n columns (m ≧ 2, n ≧ 1). The plurality of lens portions 22 have apexes in the row direction (X direction in FIG. 1) smaller than both the maximum outer diameter E of the individual lens portions 22 and the inter-vertex distance PY in the column direction (Y direction in FIG. 1). Having a distance PX. In this way, since each lens part 22 is formed continuously (continuously) in the row direction (X direction in FIG. 1), laser light is not emitted in the row direction (X direction in FIG. 1). It is possible to reduce the waste of space and reduce the size of the lens array 20 (and thus the light emitting device 1). The “distance between vertices in the row direction” refers to the distance between vertices of adjacent lens portions in the row direction. The “distance between vertices in the row direction” means the distance between vertices of adjacent lens portions in the row direction. Further, “vertex” refers to the center of the lens portion in plan view, and “maximum outer diameter” refers to the longest diameter of the lens portion in plan view.

  The inter-vertex distance PY in the column direction (Y direction in FIG. 1) can be preferably 1 mm to 12 mm, more preferably 3 mm to 9 mm. Further, the inter-vertex distance PX in the row direction (X direction in FIG. 1) can be preferably 0.5 mm to 9 mm, and more preferably 2 mm to 6 mm. By setting the inter-vertex distance PX and the inter-vertex distance PY to be equal to or greater than these lower limit values, it is possible to prevent the laser beams from adjacent semiconductor laser elements 30 from interfering with each other. Further, by making the inter-vertex distance PX and the inter-vertex distance PY less than or equal to these upper limit values, it is possible to provide a more compact light emitting device.

  The maximum outer diameter E of each lens portion 22 is preferably 1 to 2 times, more preferably 1.25 to 1.75 times the inter-vertex distance PX. By setting the maximum outer diameter E to be equal to or greater than these lower limit values, it is possible to suppress the laser beams from adjacent semiconductor laser elements 30 from interfering with each other. Moreover, a smaller light-emitting device can be provided by setting the maximum outer diameter E to be equal to or less than these upper limit values.

  The individual lens portions 22 have the same curvature in the row direction (X direction in FIG. 1) and the column direction (Y direction in FIG. 1). That is, each lens unit 22 has a curve with a curvature RX in a section in a row direction (X direction in FIG. 1) passing through the apex of the lens unit 22, and in a column direction (in FIG. 1) passing through the apex of the lens unit 22. In the cross section in the Y direction) has a curve with a curvature RY equal to the curvature RX (curvature RX = curvature RY). In this way, even when the lens array 20 is mounted by slightly rotating from a predetermined direction, the lens and the light source (semiconductor laser element 30. If the mirror 50 is provided, the mirror 50; the same applies hereinafter) and the lens. Large deviations in the positional relationship of the portions 22 are unlikely to occur. Each lens unit 22 has the same curvature not only in the row direction (X direction in FIG. 1) and the column direction (Y direction in FIG. 1) but also in all directions passing through the apex of each lens unit 22. That is, it is preferable to have curves of the same curvature in all cross sections passing through the apex of each lens portion 22. In this way, a large shift in the positional relationship between the light source and the lens unit 22 is less likely to occur.

  The plurality of lens portions 22 are not particularly limited, but preferably have a shape that can collimate laser light incident from the semiconductor laser element 30. For example, it is preferable that at least a part of each of the plurality of lens portions 22 is an aspherical curved surface (eg, the light incident surface LA is a flat surface and the light emitting surface LB is an aspherical curved surface). In this way, the laser light from the semiconductor laser element 30 can be collimated without changing the light intensity distribution.

  It is preferable that each of the plurality of lens portions 22 has an arc shape at least partially in the plan view. In this way, the lens unit 22 can be provided with more aspherical curved surfaces than in the case of another planar view shape, and therefore the laser beam from the semiconductor laser element 30 can be efficiently supplied to the lens unit 22. Can be emitted.

  The lens array 20 can be fixed to the base 10 (a sealing member 80 when the sealing member 80 is provided between the base 10 and the lens array 20) by a known method. For example, when the lens array 20 is directly fixed to the base 10, the lens array 20 and the base 10 can be fixed by a method such as adhesive fixing, laser welding, or resistance welding. When fixing by laser welding or resistance welding, at least a portion to be welded in the lens array 20 is made of a metal material. Further, when the sealing member 80 is provided between the base 10 and the lens array 20, the lens array 20 and the sealing member 80 can be bonded and fixed with an adhesive such as a UV curable adhesive.

  In order to make the space in which the semiconductor laser element 30 is disposed a sealed space, it is preferable to fix a member that covers the base 10 by welding. However, welding tends to cause misalignment. For this reason, when the lens array is directly fixed to the base by welding and the base is directly covered with the lens array, the lens array is displaced, and the light from the semiconductor laser element is transmitted to the lens portion in a predetermined mode (eg, predetermined There is a possibility that the incident light cannot be made incident at a divergence angle or a predetermined positional relationship. Therefore, in this embodiment, a sealing member 80 that is a member different from the lens array 20 is provided, and the base member 10 is covered with the sealing member 80. In this way, the sealing member 80 can be fixed to the base 10 by welding, while the lens array 20 can be fixed to the sealing member 80 with a UV curable adhesive. The positional displacement of the lens array 20 can be suppressed while the arranged space is sealed with the sealing member 80.

(Multiple semiconductor laser elements 30)
FIG. 4A is a schematic plan view of a semiconductor laser device disposed on a substrate. 4B is a cross-sectional view taken along a line II in FIG. 4A, FIG. 4C is a cross-sectional view taken along a line JJ in FIG. 4A, and FIG. 4D is an enlarged view of a portion surrounded by a broken line in FIG. It is. As shown in FIGS. 4A to 4D, the plurality of semiconductor laser elements 30 are arranged on the substrate 10. More specifically, a plurality of semiconductor laser elements 30 are arranged in the row direction (X direction in FIG. 4) and the column direction (Y direction in FIG. 4). For example, the semiconductor laser element 30 can be arranged directly on the bottom surface of the concave portion 10a of the base body 10 (on the convex portion 12a when the base 12 having the convex portion 12a is used), or is arranged via the mounting body 40 or the like. You can also If it arrange | positions via the mounting body 40, the heat which generate | occur | produced in the several semiconductor laser element 30 can be efficiently exhausted via the mounting body 40. FIG.

  The plurality of semiconductor laser elements 30 respectively emit laser light, and each laser light is incident on the light incident surface LA of each lens unit 22 directly or via a mirror 50 or the like. Each laser beam has a beam shape that is wider in the column direction (Y direction in FIG. 1) than in the row direction (X direction in FIG. 1) on each light incident surface LA of the plurality of lens portions 22 (in the column direction). Beam width WY> beam width WX in the row direction). For the plurality of semiconductor laser elements 30, a semiconductor laser element using a nitride semiconductor can be used.

  The plurality of semiconductor laser elements 30 can be electrically connected to each other by wires 60 or the like. As the wire 60, gold, silver, copper, aluminum, or the like can be used. Although the connection mode is not particularly limited, for example, a plurality of semiconductor laser elements 30 provided in the row direction (X direction in FIG. 1) can be connected in series using the wire 60.

  In FIG. 4A, a plurality of semiconductor laser elements 30 are arranged on a straight line in each row, and a relay member 70 is provided between adjacent semiconductor laser elements 30. The adjacent semiconductor laser elements 30 are electrically connected by wires 60 through the relay member 70. By doing so, since the length of each wire 60 can be made relatively short, it is possible to suppress an increase in electrical resistance. Moreover, since the distance between the adjacent semiconductor laser elements 30 can be increased in each row, thermal interference between the semiconductor laser elements 30 can be reduced. As the relay member 70, a metal material such as iron, an iron alloy, or copper, or an insulating material such as AlN, SiC, or SiN having an electrical wiring formed on the upper surface can be used. The semiconductor laser element 30 is not disposed on the relay member 70.

  The upper surface of the relay member 70 is preferably located at substantially the same height as the upper surface of the mounting body 40 or the upper surface of the semiconductor laser element 30. In this way, the wire 60 can be easily mounted. When the semiconductor laser element 30 is provided on the mounting body 40, the upper surface of the relay member 70 is preferably positioned at substantially the same height as the upper surface of the mounting body 40. Thereby, compared with the case where it makes substantially the same height as the upper surface of the semiconductor laser element 30, the thickness in the height direction of the relay member 70 can be made small, and member cost can be reduced.

  The semiconductor laser elements 30 are provided in m rows and n columns (m ≧ 2, n ≧ 1) corresponding to each lens unit. At this time, the number of semiconductor laser elements 30 in the row direction is preferably larger than the number of semiconductor laser elements 30 in the column direction. The semiconductor laser element 30 is preferably provided so that the distribution of light from the plurality of semiconductor laser elements 30 (light as the light emitting device 1) is square. Thereby, when using the light-emitting device 1 as a part of a projector, it can make it easy to equalize distribution of emitted light intensity.

(Mirror 50)
As shown in FIGS. 4A to 4D, the light emitting device 1 may include a mirror 50 on the base 10 that reflects the light emitted from the semiconductor laser element 30 toward the lens unit 22. The mirror 50 is disposed so that the emission surface of the semiconductor laser element 30 (the surface from which laser light is emitted; the same applies hereinafter) and the mirror 50 face each other. Thereby, the distance (hereinafter referred to as “optical path length”) required for the laser light emitted from the light emitting surface of the semiconductor laser element 30 to reach the emitting surface of the lens portion 22 can be increased. Therefore, the light density on the light exit surface of the lens array 20 can be reduced, and dust collection at the lens unit 22 can be easily suppressed. Further, by increasing the optical path length, the lens unit 22 can be compared with the case where the optical path length is short (for example, when the light is directly irradiated from the semiconductor laser element 30 to the lens unit 22 without arranging the mirror 50). Changes in the intensity distribution of the emitted light can be reduced. This is because by increasing the optical path length, even if light from the semiconductor laser element 30 is incident from a direction other than perpendicular to the light incident surface of the lens part 22 due to the positional deviation of the semiconductor laser element 30, the lens part 22 This is because the inclination of the light after passing through can be reduced.

  The number and shape of the mirrors 50 are not particularly limited. For example, a plurality of mirrors that are long in the row direction (X direction in FIG. 1) may be arranged in a column, or a matrix of m rows and n columns (m ≧ 2, n ≧ 1) corresponding to the plurality of lens units 22. A plurality of mirrors 50 may be arranged in a shape. When arranged in a matrix, one mirror 50 is provided for each of the plurality of lens portions 22, so that even if a positional relationship between a certain semiconductor laser element 30 and a certain mirror 50 is shifted, other semiconductor laser elements are arranged. The positional relationship between the mirror 30 and the other mirror 50 is not affected. Therefore, the influence of mounting deviation of one mirror 50 can be minimized.

  The mirror 50 can be made of glass, synthetic quartz, sapphire, aluminum or the like. The mirror 50 has a reflecting surface that reflects the emitted light of the semiconductor laser element 30 (laser light emitted from the semiconductor laser element 30; the same applies hereinafter). A reflective film such as a dielectric multilayer film is provided on the reflective surface. In the case where the light emitted from the plurality of semiconductor laser elements 30 is directly incident on the lens array 20 without using the mirror 50, for example, the plurality of semiconductor laser elements 30 instead of the mirror 50 are arranged in m rows and n columns ( They are arranged on the substrate 10 in a matrix form of m ≧ 2 and n ≧ 1).

  The mirror 50 is not particularly limited, but is preferably located immediately below the apex of the lens unit 22. Especially, it is preferable that the reflection part of the mirror 50 is located directly under the vertex of the lens part 22. In this way, the mirror 50 can reflect the light emitted from the semiconductor laser element 30 toward the apex of the lens portion 22, so that the intensity distribution of the light emitted from the lens array 20 (lens portion 22) changes. Hard to do. Here, the reflecting portion refers to a portion of the reflecting surface provided on the mirror 50 that reflects the emitted light of the semiconductor laser element 30.

  As shown in FIGS. 1A to 1D (see, for example, the semiconductor laser element 30 and the mirror 50 transparently shown in the lens unit 22 located at the upper left in FIG. 1A). Is preferably arranged on the inner side of the periphery of the lens portion 22 in plan view. In this case, since the semiconductor laser element 30 is disposed close to the mirror 50, it is possible to suppress an increase in the area of light emitted from the lens unit 22.

(Sealing member 80)
As illustrated in FIGS. 1A to 1D, the light emitting device 1 may include a sealing member 80 between the base 10 and the lens array 20. By providing the sealing member 80, the effect of hermetic sealing can be enhanced as compared with the case where only the lens array 20 is provided. In particular, when a nitride semiconductor is used as the semiconductor laser element 30, the organic substance or the like is easily collected on the emission surface of the semiconductor laser element 30, and thus the hermetic sealing effect by the sealing member 80 becomes more remarkable.

  FIG. 5A is a schematic plan view of a sealing member. 5B is a sectional view taken along the line KK in FIG. 5A, and FIG. 5C is a sectional view taken along the line LL in FIG. 5A. In FIG. 5A, for easy understanding, the window portion 82a is transparently shown by a broken line. As shown in FIGS. 5A to 5C, the sealing member 80 includes a main body portion 82 having a plurality of window portions 82 a and a translucent member 84. The main body 82 can be made of glass, metal, ceramic, or a combination of these materials, preferably metal. Thereby, since the base | substrate 10 and the sealing member 80 can be fixed by welding etc., it becomes easy to carry out airtight sealing. Further, as the translucent member 84, a member that transmits at least light emitted from the semiconductor laser element 30 can be used. The shapes of the main body 82 and the translucent member 84 are not particularly limited. For example, in the present embodiment, the main body portion 82 has the concave portion 82b on the lens array 20 side. However, when a flat plate member is used as the base body 10, the main body portion 82 may have the concave portion 82b on the base body 10 side.

  The main body 82 may have one window 82 a for two or more semiconductor laser elements 30, but has one window 82 a for each of the plurality of semiconductor laser elements 30. It is preferable. In this way, the bonding area between the main body 82 excluding the window 82a and the translucent member 84 can be increased, so the base 10 and the main body 82 are bonded together by resistance welding or the like for hermetic sealing. In this case, it is possible to suppress cracking of the translucent member 84 due to stress.

  As described above, according to the light emitting device 1 according to the first embodiment, the plurality of lens units 22 have the same curvature in the row direction (X direction in FIG. 1) and the column direction (Y direction in FIG. 1). Therefore, even when the lens array 20 is mounted by being slightly rotated from a predetermined direction, a large shift is hardly caused in the positional relationship between the light source and the lens unit 22, and the intensity distribution of light emitted from the lens array 20 is A light-emitting device that hardly changes can be provided.

[Light Emitting Device 2 According to Embodiment 2]
6A is a schematic plan view of the light-emitting device according to Embodiment 2, FIG. 6B is a cross-sectional view taken along line MM in FIG. 6A, FIG. 6C is a cross-sectional view taken along line NN in FIG. FIG. 6B is a cross-sectional view taken along line OO in FIG. 6A. In FIG. 6A, in order to facilitate understanding, the semiconductor laser element 30 and the like arranged below the uppermost lens unit are shown transparently. 6A to 6D, the light-emitting device 2 according to Embodiment 2 includes a plurality of lens arrays 20A, 20B, 20C, and 20D arranged in a column direction (Y direction in FIG. 1) and a plurality of lenses. The arrays 20A, 20B, 20C, and 20D are different from the light emitting device 1 according to the first embodiment in that each of the arrays 20A, 20B, 20C, and 20D includes a plurality of lens units 22 in the row direction (X direction in FIG. 1). Even in the second embodiment, similarly to the first embodiment, even when the lens array 20 is mounted by being slightly rotated from a predetermined direction, it is difficult to cause a large shift in the positional relationship between the light source and the lens unit 22. A light emitting device in which the intensity distribution of light emitted from the lens array 20 is unlikely to change can be provided.

[Light Emitting Device 3 According to Embodiment 3]
FIG. 7 shows a schematic plan view of the light emitting device 3 according to the third embodiment. In FIG. 7, the outer edge of the recess 82b is indicated by a broken line. Moreover, in FIG. 7, the area | region where the lens array 20 is fixed to the sealing member 80 with an adhesive agent is hatched. As shown in FIG. 7, in the light emitting device 3, the lens array 20 includes a lens portion 22 and a connection portion 24 that connects the lens portions 22, and is fixed to the sealing member 80 with an adhesive at the connection portion 24. ing. The sealing member 80 has a recess 82 b that is recessed toward the region where the plurality of semiconductor laser elements 30 are placed on the base 10. The lens array 20 has a through hole F inside the recess 82b in plan view, and is fixed to the sealing member 80 by an adhesive outside the recess 82b.

  When the space between the lens array and the sealing member is a sealed space, when the lens array is fixed by an adhesive containing an organic substance (for example, a UV curable adhesive), gas evaporated from the adhesive is the lens. It remains in the space between the array and the sealing member. At this time, the organic substance contained in the vaporized gas reacts with the laser beam and may be deposited on the translucent member or the lens array. On the other hand, if the through hole F is provided in the connection portion 24, the space between the lens array 20 and the sealing member 80 becomes an open space, so that the gas evaporated from the adhesive is released to the outside of the space. , It becomes easy to suppress the accumulation (dust collection) of organic matter. An open space is an open space.

  A plurality of through holes F are preferably provided. The plurality of through holes F are preferably provided symmetrically with respect to the center line of the lens array 20. This makes it easier to form an air flow in the space between the lens array 20 and the sealing member 80 (for example, when two through holes are provided in line symmetry, one through Air flows into the space from the hole and air flows out from the other through-hole to the outside of the space.), And the gas vaporized from the adhesive is released to the outside of the space. The accumulation (dust collection) of organic matter in the space can be suppressed. In addition, the occurrence of condensation in the space between the lens array 20 and the sealing member 80 can be suppressed. Since an adhesive containing an organic substance such as a UV curable adhesive is a material that easily absorbs moisture, when the lens array 20 is fixed by the UV curable adhesive, moisture absorbed by the adhesive from the atmosphere. Tends to stay in the space between the sealing member 80 and the lens array 20, and there is a risk that condensation may occur in the space depending on the use situation. Therefore, the above-described configuration for forming an air flow in the space can be particularly preferably applied when the lens array 20 is fixed to the sealing member 80 with an adhesive containing an organic substance such as a UV curable adhesive.

[Light Emitting Device 4 According to Embodiment 4]
FIG. 8 is a schematic plan view of the light emitting device 4 according to the fourth embodiment. In FIG. 8, the outer edge of the recess 82b is indicated by a solid line and a broken line. Moreover, in FIG. 8, the area | region where the lens array 20 is fixed to the sealing member 80 with an adhesive agent is hatched. As shown in FIG. 8, in the light emitting device 4, the sealing member 80 has a recess 82 b that is recessed toward the region where the plurality of semiconductor laser elements 30 are placed on the base 10. The lens array 20 is arranged so that a part of the outer edge of the lens array 20 is located inside the recess 82b in plan view (see the opening G in FIG. 8), and is bonded outside the recess 82b. It is fixed to the sealing member 80 with an agent. Also in the light emitting device 4, since the space between the lens array 20 and the sealing member 80 is an open space, it is easy to suppress organic matter accumulation (dust collection) and condensation.

  The number and arrangement of the openings G are not limited to the number and arrangement shown in FIG. 8 as long as a part of the outer edge of the lens array 20 is positioned inside the recess 82b. However, the openings G are preferably provided at two or more locations (not limited to the four corners) on the outer edge of the lens array 20 in plan view. In this case, the openings G are preferably provided at positions that are point-symmetric with respect to the center of the lens array 20. In this way, an air flow is formed in the space between the lens array 20 and the sealing member 80 as in the case where the plurality of through holes F are provided symmetrically with respect to the center line of the lens array 20. It becomes easy to do. Therefore, the accumulation of organic matter (dust collection) and the occurrence of condensation can be further suppressed.

  Although Embodiments 3 and 4 have been described above, the through hole F and the opening G are examples of specific configurations in which the space between the lens array 20 and the sealing member 80 is an open space. The space between the lens array 20 and the sealing member 80 may be open so that the gas generated in the space can be released to the outside, and such an open space (that is, an open space) is specified. The configuration is not particularly limited.

  Although the embodiments have been described above, the configurations described in the scope of the claims are not limited by these descriptions.

1, 2, 3, 4 Light emitting device 10 Base 10a Recess 12 Base 12a Protrusion 14 Side wall 20, 20A, 20B, 20C, 20D Lens array 22 Lens portion 24 Connection portion 30 Semiconductor laser element 40 Mounting body 50 Mirror 60 Wire 70 Relay member 80 Sealing member 82 Main body portion 82a Window portion 82b Recess 84 Translucent member 90 Wiring PX Distance between vertices PY in row direction Distance between vertices in row direction WX Beam width in row direction WY Beam width LA in row direction Light incidence Surface LB Light exit surface E Maximum outer diameter F Through hole G Opening X Row direction Y Column direction

Claims (8)

A light emitting device comprising a base, a lens array having a plurality of lens portions in a matrix, and a plurality of semiconductor laser elements arranged on the base,
The plurality of semiconductor laser elements each emit laser light,
Each laser beam has a beam shape that is wider in the column direction than in the row direction on each light incident surface of the plurality of lens portions,
The plurality of lens portions have a vertex-to-vertex distance in the row direction smaller than both the maximum outer diameter of each lens portion and the distance between the vertices in the column direction, and have the same curvature in the row direction and the column direction. A light emitting device characterized by the above. A light-emitting device comprising: a base; a plurality of lens arrays arranged in a column direction, each having a plurality of lens portions in a row direction; and a plurality of semiconductor laser elements arranged on the base,
The plurality of semiconductor laser elements each emit laser light,
Each laser beam has a beam shape that is wider in the column direction than in the row direction on each light incident surface of the plurality of lens portions,
The plurality of lens portions have a vertex-to-vertex distance in the row direction smaller than both the maximum outer diameter of each lens portion and the distance between the vertices in the column direction, and have the same curvature in the row direction and the column direction. A light emitting device characterized by the above.   3. The light emitting device according to claim 1, further comprising a mirror that reflects the emitted light of the semiconductor laser element toward the lens unit on the base. 4.   The light emitting device according to claim 3, wherein the mirror is located immediately below the apex of the lens unit.   The light-emitting device according to claim 1, wherein at least a part of the lens portion is an aspherical curved surface.   The light emitting device according to claim 1, wherein at least a part of the periphery of the lens portion has an arc shape in plan view.   The light emitting device according to claim 1, further comprising a sealing member between the base and the lens array. The lens array includes the lens part and a connection part that connects the lens parts, and is fixed to the sealing member by an adhesive in the connection part,
The light emitting device according to claim 7, wherein a space between the lens array and the sealing member is an open space.

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