JP2016105486A - Dynamic or adaptive tracking of spectrum feature part for end point detection - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical end point detection system that tracks characteristics of a selected spectrum feature part in spectrometry for determining an endpoint or changing the polishing speed and reduces processing resources by identifying the selected feature part.SOLUTION: The polishing control method includes: start polishing after receiving a user's input for selecting a fixed wavelength range; measuring a sequence of optical spectrum; searching a spectrum feature part selected in a wavelength range 708; obtaining a value of a feature 704; and determining at least one of a polishing endpoint and an adjustment concerning the polishing speed on the basis of a value sequence.SELECTED DRAWING: Figure 7B

Description

  The present disclosure relates to optical monitoring during chemical mechanical polishing of a substrate.

  Integrated circuits are typically formed on a substrate by sequential deposition of a conductive layer, a semiconductive layer, or an insulating layer on a silicon wafer. One manufacturing step includes depositing a filler layer over the non-planar surface and planarizing the filler layer. In some applications, the filler layer is planarized until the top surface of the patterned layer is exposed. For example, a conductive filler layer can be deposited over the patterned insulating layer to fill a trench or hole in the insulating layer. After planarization, the portions of the conductive layer that remain between the raised patterns of the insulating layer form vias, plugs, and lines that provide conductive paths between thin film circuits on the substrate. In other applications, such as oxide polishing, the filler layer is planarized until a predetermined thickness remains on the non-planar surface. Further, it is usually necessary to planarize the substrate surface for photolithography.

  Chemical mechanical polishing (CMP) is one accepted planarization method. This planarization method typically requires that the substrate be mounted on a carrier or polishing head. The exposed surface of the substrate is typically opposed to a rotating polishing pad. The carrier head applies a controllable load to the substrate and pushes the substrate against the polishing pad. Typically, an abrasive polishing slurry is supplied to the surface of the polishing pad.

  One problem with CMP is determining whether the polishing process is complete, i.e., whether the substrate layer has been planarized to the desired planarity or thickness, or when the desired amount of material has been removed. It is a judgment. Variations in slurry dispersion, polishing pad condition, relative speed between polishing pad and substrate, and load on the substrate can cause variations in material removal rates. These variations, as well as variations in the initial thickness of the substrate layer, result in variations in the time required to reach the polishing endpoint. Thus, the polishing endpoint cannot be determined simply as a function of polishing time.

  In some systems, the substrate is optically monitored in situ during polishing, for example through the window of the polishing pad. However, existing optical monitoring techniques may not meet the increasing demands of semiconductor device manufacturers.

  Some optical endpoint detection systems track the characteristics of selected spectral features in spectral measurements to determine the endpoint or to change the polishing rate. In the spectrum, a spectral feature similar to the selected spectral feature may make it difficult to track the selected spectral feature. Identification of the wavelength range in which the optical endpoint detection system searches for the selected spectral feature enables the optical endpoint detection system to correctly identify the selected spectral feature and reduces processing resources.

  In some polishing processes, a second layer of a second material, such as a barrier layer, such as a nitride, such as tantalum nitride or titanium nitride, is removed from the substrate to expose the first layer or layer structure, A layer or layer structure includes different first materials, such as dielectric materials, low-k materials, and / or low-k cap materials. Often it is desirable to remove the first material until the target thickness remains. Some optical endpoint detection techniques that track the characteristics of selected spectral features in spectral measurements to determine the endpoint or to change the polishing rate are sufficient to know the initial thickness of the second material. As such, there may be problems with such a polishing process. However, the spectrum is removed by another monitoring technique that can reliably detect the removal of the second layer and the exposure of the underlying first layer or layer structure, such as motor torque, eddy currents, or optical intensity monitoring. These problems can be avoided if feature tracking is triggered. Furthermore, there may be variations in the thickness of the layer or layer structure from substrate to substrate. In order to improve the uniformity between the substrates of the final thickness of the layer or layer structure, the initial thickness of the layer or layer structure can be measured before polishing, and from the initial thickness and the target thickness, A target value can be calculated.

In one aspect, a method for controlling polishing is selected including polishing a substrate, a selected spectral feature, a wavelength range having a width, and an identifier of the selected spectral feature to be monitored during polishing. Receiving the characteristics of the spectral features. While the substrate is being polished, a sequence of spectra of light from the substrate is measured. From the sequence of spectra, a sequence of selected spectral feature characteristic values is generated. The generating step generates, for at least some spectra from the sequence of spectra, a modified wavelength range based on the position of the spectral feature within the previous wavelength range used for the previous spectrum in the sequence of spectra. A step of searching for a selected spectral feature within a modified wavelength range, and determining a value of a characteristic of the selected spectral feature. At least one of a polishing endpoint and an adjustment for polishing rate based on the function is determined by a sequence of values.

  Some implementations may include one or more of the following features. The wavelength range can have a fixed width. Generating the modified wavelength range may include centering the fixed width at a position of the characteristic within the previous wavelength range. The step of generating the corrected wavelength range is to determine the position of the characteristic within the previous wavelength range and to adjust the wavelength range so that the characteristic is positioned closer to the center of the corrected wavelength range within the corrected wavelength range. The step of performing. Generating a modified wavelength range includes determining a wavelength value for a selected spectral feature for at least some of the spectra in the sequence of wavelengths to generate a sequence of wavelength values; Fitting a function to the sequence of and calculating an expected wavelength value for the selected spectral feature for subsequent spectral measurements from the function. The function may be a linear function. Generating the modified wavelength range can include centering the width of the wavelength range on the expected wavelength value. The method can include fitting a function to the sequence of values, determining at least one of a polishing endpoint and an adjustment for the polishing rate based on the function. The steps of determining the polishing end point are: calculating an initial value of the characteristic from the function; calculating a current value of the characteristic from the function; calculating a difference between the initial value and the current value; And stopping polishing when the value is reached. The function may be a linear function. The selected spectral features may comprise spectral peaks, spectral valleys, or spectral zero crossings. A characteristic may comprise wavelength, width, or intensity. The selected spectral feature may comprise a spectral peak and the characteristic may comprise a peak width. The spectrum can be measured for visible light and the wavelength range can have a width of 50-200 nanometers.

  In another aspect, a method for controlling polishing receives user input selecting a fixed wavelength range that is a subset of wavelengths measured by an in situ monitoring system, an identifier of a selected spectral feature, and polishing. Receiving a characteristic of the selected spectral feature to be monitored, polishing the substrate, and for each spectrum in the sequence of spectra, the spectrum of light from the substrate while the substrate is being polished Determining a selected spectral feature within a fixed wavelength range of each spectrum, and determining a characteristic value of the selected spectral feature to generate a sequence of values. Based on the step and the sequence of values, at least one of the polishing endpoint and the polishing rate adjustment And a step of constant.

  Some implementations may include one or more of the following features. An in situ monitoring system can measure the intensity of wavelengths that include at least visible light, and the fixed wavelength range can have a width of 50-200 nanometers. The selected spectral features may comprise spectral peaks, spectral valleys, or spectral zero crossings. A characteristic may comprise wavelength, width, or intensity.

  In another aspect, a method for controlling polishing comprises polishing a substrate having a first layer, an identifier of a selected spectral feature, and a characteristic of the selected spectral feature that is monitored during polishing. Receiving, measuring a spectral sequence of light from the substrate while the substrate is being polished, and determining a first value for the characteristic of the feature when the first layer is exposed A step, adding an offset to the first value to generate a second value, monitoring the characteristic of the feature, and determining that the characteristic of the feature has reached the second value Stopping the polishing.

Some implementations may include one or more of the following features. The characteristic may be position, width, or strength. A selected feature may continue to evolve in position, width, or intensity over a sequence of spectra. The feature may be a peak or trough of the spectrum. The substrate may include a second layer positioned over the first layer, and the polishing step may include polishing the second layer, and the in-situ monitoring system may be used to detect the first layer. Exposure can be detected. The first value can be determined when the first in-situ monitoring technique detects exposure of the first layer. The step of detecting the exposure of the first layer may be a separate process from the step of monitoring the characteristic of the feature. Detecting the exposure of the first layer can include monitoring the total reflected intensity from the substrate. Monitoring the total reflected intensity can include integrating the spectrum over a wavelength range for each spectrum in the sequence of spectra to generate the total reflected intensity. The in situ monitoring system can include a motor torque or friction monitoring system. The first value can be obtained during polishing of the first layer, for example, immediately after the start of polishing of the first layer. The first layer can be exposed before the polishing of the substrate begins. Monitoring the characteristic of the feature may include determining a value of the characteristic to generate a sequence of values for each spectrum from the sequence of spectra. By applying a linear function to the sequence of values and determining the end point at which the linear function is equal to the second value, it can be determined that the characteristic of the feature has reached the second value. The thickness of the first layer before polishing can be received, and an offset value can be calculated from the thickness before polishing. The step of calculating the offset value ΔV can include calculating (D ₂ −d _T ) / (dD / dV), where d _T is the target thickness and D ₁ is the setup is the thickness before polishing the first layer from the substrate, D ₂ is the thickness after the polishing of the first layer from the setup substrate, dD / dV is the thickness as a function of characteristics It is the rate of change. The step of calculating the offset value ΔV can include the step of calculating ΔV = ΔV _D + (d ₁ −D ₁ ) / (dD / dV) + (D ₂ −d _T ) / (dD / dV). Where d ₁ is the thickness before polishing, D ₁ is the thickness of the first layer from the setup substrate before polishing, and ΔV _D is the polishing of the first layer of the setup substrate. It is the difference in characteristic value of the feature between the previous thickness and the thickness after polishing. The thickness d ₁ before polishing can be measured with a separate measuring station. The thickness change rate dD / dV as a function of the characteristic may be the thickness change rate near the polishing end point. The first layer may comprise polysilicon and / or a dielectric material, for example consisting of substantially pure polysilicon, consisting of a dielectric material, or consisting of a combination of polysilicon and dielectric material There is.

  Some implementations may optionally include one or more of the following advantages. Identification of the wavelength range to explore the characteristics of the selected spectral feature can make the endpoint detection or polishing rate change determination more accurate, eg, the system is incorrect during subsequent spectral measurements The possibility of selecting a spectral feature is reduced. By tracking spectral features over a range of wavelengths rather than across the spectrum, spectral features can be identified more easily and quickly. The processing resources required to identify the selected spectral feature can be reduced.

  The time for the semiconductor manufacturer to develop an algorithm for detecting the end point of a specific manufacturing substrate can be reduced. Spectral feature tracking can be applied to polishing operations beginning with polishing of the reflective layer and can improve wafer-to-wafer thickness uniformity (WTWU). The initial thickness of the layer can be measured before polishing and the target value of the feature can be calculated from the initial thickness and the target thickness, providing a more accurate endpoint determination.

  The details of one or more implementations are set forth in the accompanying drawings and the description below. Other aspects, features, and advantages will be apparent from the description and drawings, and from the claims.

It is a figure which shows a chemical mechanical polishing apparatus. It is a top view of a polishing pad, and is a figure showing a position where in-situ measurement is performed. It is a figure which shows the spectrum obtained from an in situ measurement. It is a figure which shows progress of the spectrum obtained from an in-situ measurement when grinding | polishing progresses. Part A shows an exemplary graph of the spectrum of light reflected from the substrate, and part B shows a graph of A that has been passed through a high pass filter. Part A shows the spectrum of light reflected from the substrate, and part B shows a contour plot of the spectrum obtained from in situ measurements of the light reflected from the substrate. FIG. 5 is an exemplary graph of polishing progress measured as a difference in characteristics with respect to time. FIG. 4 is a diagram illustrating an exemplary graph of polishing progress, measured as a difference in characteristics with respect to time, wherein the characteristics of two different features are measured to adjust the polishing rate of the substrate. It is a figure which shows another spectrum of the light obtained from an in situ measurement. It is a figure which shows the spectrum of the light obtained after the spectrum of FIG. 7A. It is a figure which shows another spectrum of the light obtained after the spectrum of FIG. 7A. FIG. 6 is a diagram illustrating a method for selecting a peak to be monitored. FIG. 4 shows a method for obtaining target parameters for selected peaks. It is a figure which shows the method for end point determination. It is a figure which shows the method set for an end point detection. It is a figure which shows another method for an end point determination. FIG. 5 is a graph showing total reflection intensity as a function of time during polishing. FIG. 4 is a graph showing the spectral peak wavelength position as a function of time during polishing.

  Like reference numbers and designations in the various drawings indicate like elements.

  One optical monitoring technique is to measure the spectrum of light reflected from the substrate during polishing and identify a matching reference spectrum from the library. One problem that can arise with spectral matching techniques is that for some types of substrates, there is a large difference in the underlying die features from substrate to substrate, so reflections from substrates with the same outer layer thickness face up Variation of the spectrum to be generated. These variations make proper spectral matching more difficult and reduce the reliability of optical monitoring.

  One technique that addresses this problem is to measure the spectrum of light reflected from the polished substrate and identify changes in the characteristics of the spectral features. Tracking changes in the characteristics of the spectral features, such as changes in the wavelength of the spectral peaks, can result in higher polishing uniformity between the substrates in the batch. By determining the target difference in the characteristics of the spectrum feature, the end point can be signaled when the value of the characteristic changes by the target amount.

  The substrate can be as simple as a single dielectric layer disposed on a semiconductor layer, or it can have a fairly complex stack. For example, the substrate can include a first layer and a second layer disposed on the first layer. The first layer may be a dielectric, for example an oxide such as silicon dioxide, or a low-k material, such as carbon-doped silicon dioxide, such as Black Diamond ™ (Applied Materials, Inc.) or Coral ™. (Manufactured by Novellus Systems, Inc.). The second layer may be a barrier layer having a composition different from that of the first layer. For example, the barrier layer may be a metal or a metal nitride, such as tantalum nitride or titanium nitride. Optionally, a material formed from one or more additional layers, such as a low-k cap material, such as tetraethylorthosilicate (TEOS), is disposed between the first layer and the second layer. . Both the first layer and the second layer are at least translucent. Together, the first layer and one or more additional layers (if any) form a stack under the second layer. However, in some implementations, only one layer containing, for example, polysilicon and / or dielectric is polished (although there may be additional layers below the layer to be polished).

  Chemical mechanical polishing can be used to planarize the substrate until the second layer is exposed. For example, if an opaque conductive material is present, the conductive material can be polished until the second layer, eg, the barrier layer, is exposed. The portion of the second layer remaining on the first layer is then removed and the substrate is polished until the first layer, eg, a dielectric layer, is exposed. Further, it is sometimes desirable to polish the first layer, eg, the dielectric layer, until the target thickness remains or until the target amount of material is removed.

  One polishing method is to polish the conductive layer on the first polishing pad until at least the second layer, eg, the barrier layer, is exposed. Further, a portion of the thickness of the second layer can be removed, for example, during an extra polishing step with the first polishing pad. The substrate is then transferred to a second polishing pad where the second layer, eg, the barrier layer, is completely removed, and a portion of the thickness of the underlying first layer, eg, the low-k dielectric is also present. Removed. Further, if any, one or more additional layers between the first layer and the second layer can be removed in the same polishing operation with the second polishing pad.

  However, when the substrate is transferred to the second polishing pad, the initial thickness of the second layer may not be known. As discussed above, this can cause problems with optical endpoint detection techniques that track the characteristics of the spectral features selected in the spectral measurements to determine the endpoint at the target thickness. However, if spectral feature tracking is triggered by another monitoring technique that can reliably detect the removal of the second layer and the exposure of the underlying first layer or layer structure, this problem Can be reduced. Further, by measuring the initial thickness of the first layer, and calculating the target value of the feature from the initial thickness and the target thickness for the first layer, the inter-substrate thickness of the first layer thickness The uniformity can be improved.

  The spectral features can include spectral peaks, spectral valleys, spectral inflection points, or spectral zero crossings. The characteristic of the feature can include wavelength, width, or intensity.

  FIG. 1 shows a polishing apparatus 20 that is operable to polish a substrate 10. The polishing apparatus 20 includes a rotatable disk-shaped platen 24, and a polishing pad 30 is positioned on the platen 24. The platen is operable to rotate about the axis 25. For example, the motor can rotate the drive shaft 22 to rotate the platen 24. The polishing pad 30 can be detachably fixed to the platen 24 by, for example, an adhesive layer. When worn, the polishing pad 30 can be removed and replaced. The polishing pad 30 may be a two-layer polishing pad having an outer polishing layer 32 and a softer backing layer 34.

  By providing an aperture (ie, a hole through the pad) or a solid window, optical access 36 through the polishing pad is provided. The solid window can be secured to the polishing pad, but in some implementations the solid window can be supported on the platen 24 and protrudes into the aperture of the polishing pad. Typically, the polishing pad 30 is positioned on the platen 24 such that an aperture or window is positioned on the optical head 53 positioned in the recess 26 of the platen 24. As a result, the optical head 53 has optical access to the substrate to be polished through an aperture or window.

  The window may be, for example, a rigid crystalline or glassy material, such as quartz or glass, or a softer plastic material, such as silicon, polyurethane, or a halogenated polymer (such as a fluoropolymer), or a combination of the above materials. The window may be transparent to white light. If the top surface of the solid window is a rigid crystalline or glassy material, the top surface should be well recessed from the polishing surface to prevent scratching. If the top surface is near the polishing surface and may contact the polishing surface, the top surface of the window should be a softer plastic material. In some implementations, the solid window is a polyurethane window or a window comprising a combination of quartz and polyurethane that is secured within the polishing pad. The window may have a high transmittance for a specific color of monochromatic light, for example blue light or red light, for example about 80%. The window can be sealed to the polishing pad 30 so that liquid does not leak through the interface between the window and the polishing pad 30.

  In one implementation, the window includes a rigid crystalline and glassy material covered with an outer layer of a softer plastic material. The upper surface of the softer material may be flush with the polishing surface. The bottom surface of the rigid material may be flush with the bottom surface of the polishing pad or may be recessed with respect to the bottom surface. In particular, if the polishing pad includes two layers, a solid window can be incorporated into the polishing layer and the bottom layer can have an aperture aligned with the solid window.

  The bottom surface of the window can optionally include one or more recesses. The recess can be shaped to accommodate, for example, the end of an optical fiber cable or the end of an eddy current sensor. Due to the recess, the end of the fiber optic cable or the end of the eddy current sensor is positioned away from the surface of the substrate to be polished by a distance less than the thickness of the window. In implementations where the window includes a rigid crystalline or glassy portion and the recesses are formed in such portions by machining, the recesses are polished to remove scratches caused by machining. Alternatively, a solvent and / or liquid polymer can be applied to the surface of the recess to remove scratches caused by machining. Scratch removal, usually caused by machining, can reduce scattering and improve light transmission through the window.

  The backing layer 34 of the polishing pad can be attached to the outer polishing layer 32 of the polishing pad, for example, with an adhesive. An aperture providing optical access 36 can be formed in the pad 30, for example by cutting or molding the pad 30 to include the aperture, and the window is inserted into the aperture and secured to the pad 30, for example, by an adhesive. can do. Alternatively, the liquid precursor of the window can be metered into the aperture of the pad 30 and cured to form the window. Alternatively, a solid transparent element, such as the crystalline or glassy portion described above, can be positioned in the liquid pad material and the liquid pad material can be cured to form a pad 30 around the transparent element. In either of the two cases, a block of pad material can be formed, and a layer of polishing pad having a shaped window can be cut out of the block.

  The polishing apparatus 20 includes a combined slurry / rinse arm 39. During polishing, the arm 39 is operable to dispense a slurry 38 containing a liquid and a pH adjuster. Alternatively, the polishing apparatus includes a slurry port operable to dispense slurry onto the polishing pad 30.

  The polishing apparatus 20 includes a carrier head 70 that is operable to hold the substrate 10 against the polishing pad 30. The carrier head 70 is suspended from a support structure 72, such as a carousel, and is connected to a carrier head rotation motor 76 by a carrier drive shaft 74 so that the carrier head can rotate about an axis 71. Further, the carrier head 70 can vibrate laterally within a radial slot formed in the support structure 72. In operation, the platen is rotated about its central axis 25 and the carrier head is rotated about its central axis 71 and translated laterally across the top surface of the polishing pad.

  The polishing apparatus also includes an optical monitoring system that can be used to determine the polishing endpoint as described below. The optical monitoring system includes a light source 51 and a photodetector 52. Light travels from the light source 51 through the optical access 36 to the polishing pad 30, strikes the substrate 10, is reflected from the substrate 10, returns through the optical access 36, and travels to the photodetector 52.

  A bifurcated optical cable 54 can be used to transmit light from the light source 51 to the optical access 36 and back from the optical access 36 to the photodetector 52. The bifurcated optical cable 54 may include a “trunk” 55 and two “branches” 56 and 58.

  As described above, the platen 24 includes the recess 26, and the optical head 53 is positioned in the recess 26. The optical head 53 holds one end of a trunk portion 55 of a bifurcated branch fiber cable 54 configured to carry light to and from the polished substrate surface. The optical head 53 can include one or more lenses or windows located over the end of the bifurcated fiber cable 54. Alternatively, the optical head 53 can simply hold the end of the trunk portion 55 adjacent to a solid window in the polishing pad. The optical head 53 can be removed from the recess 26 as necessary for performing preventive maintenance or subsequent maintenance, for example.

  The platen includes a removable in situ monitoring module 50. The in-situ monitoring module 50 is one or more of a light source 51, a photodetector 52, and a circuit for transmitting signals to and receiving signals from the light source 51 and the photodetector 52. Multiple can be included. For example, the output of detector 52 may be a digital electronic signal that travels through a rotary coupler in device shaft 22, such as a slip ring, to a controller for an optical monitoring system. Similarly, the light source can be switched on or off in response to a control command with a digital electronic signal traveling from the controller through the rotary coupler to the module 50.

  The in-situ monitoring module 50 can also hold the respective ends of the branch portions 56 and 58 of the bifurcated optical fiber 54. The light source is operable to transmit light, which is conveyed through the branch portion 56 and exits the end of the trunk portion 55 located in the optical head 53 and strikes the substrate to be polished. The light reflected from the substrate is received at the end of the trunk portion 55 located in the optical head 53, and conveyed to the photodetector 52 through the branch portion 58.

  In one implementation, the bifurcated branch fiber cable 54 is a bundle of optical fibers. The bundle includes a first group of optical fibers and a second group of optical fibers. The first group of optical fibers are connected to carry light from the light source 51 to the surface of the substrate to be polished. The second group of optical fibers are connected to receive light reflected from the substrate surface to be polished and to carry the received light to the photodetector 52. Configuring the optical fibers such that the second group of optical fibers forms an X shape centered on the longitudinal axis of the bifurcated optical fiber 54 (when viewed in cross section of the bifurcated fiber cable 54). Can do. Alternatively, other configurations can be taken. For example, the second group of optical fibers can be V-shaped to mirror each other. A suitable bifurcated optical fiber is available from Verity Instruments, Inc. (Carrollton, Texas).

  There is typically an optimum distance between the polishing pad window and the end of the trunk portion 55 of the bifurcated fiber cable 54 proximate to the polishing pad window. This distance can be determined empirically and is affected, for example, by the reflectivity of the window, the shape of the light beam emitted from the bifurcated fiber cable, and the distance to the monitored substrate. In one implementation, the bifurcated fiber cable is positioned so that the end proximate to the window is as close as possible to the bottom of the window without actually touching the window. In this implementation, the polishing apparatus 20 includes a mechanism that is operable to adjust the distance between the end of the bifurcated fiber cable 54 and the bottom surface of the polishing pad window, for example as part of the optical head 53. be able to. Alternatively, the proximal end of the bifurcated fiber cable 54 is embedded in the window.

  The light source 51 is operable to emit white light. In one implementation, the emitted white light includes light having a wavelength of 200-800 nanometers. A suitable light source is a xenon lamp or a xenon mercury lamp.

  The photodetector 52 may be a spectrometer. A spectrometer is basically an optical instrument for measuring light properties, such as intensity, over a portion of the electromagnetic spectrum. One suitable spectrometer is a diffraction grating spectrometer. A typical output for a spectrometer is the intensity of light as a function of wavelength.

  The light source 51 and the light detector 52 are connected to a computing device that is operable to control the operation of the light source 51 and the light detector 52 and to receive signals from the light source 51 and the light detector 52. The computing device can include a microprocessor, such as a personal computer, located near the polishing apparatus. For control, the computing device can, for example, synchronize the operation of the light source 51 with the rotation of the platen 24. As shown in FIG. 2, the computer can cause the light source 51 to emit a series of flashes that begin just before the substrate 10 passes over the in-situ monitoring module 50 and ends immediately after it passes. Each point 201-211 represents a position where light from the in-situ monitoring module 50 hits the substrate 10 and is reflected from the substrate 10. Alternatively, the computer can cause the light source 51 to continuously emit light that begins just before the substrate 10 passes over the in situ monitoring module 50 and ends immediately after it passes.

  As polishing proceeds, the spectrum obtained, for example, by a continuous sweep of the sensor on the platen across the substrate provides a sequence of spectra. In some implementations, the light source 51 emits a series of flashes of light to multiple portions of the substrate 10. For example, the light source can emit a flash of light to the central portion of the substrate 10 and the outer portion of the substrate 10. The light reflected from the substrate 10 can be received by the photodetector 52 to determine multiple spectral sequences from multiple portions of the substrate 10. Features can be identified in the spectrum, where each feature is associated with a portion of the substrate 10. For example, these features can be used in determining the endpoint conditions for polishing the substrate 10. In some embodiments, monitoring of multiple portions of the substrate 10 allows for changing the polishing rate in one or more portions of the substrate 10.

  With respect to signal reception, the computing device may receive a signal carrying information describing, for example, the spectrum of light received by the photodetector 52. FIG. 3A shows an example of a spectrum measured from light emitted from a single flash of a light source and reflected from a substrate. The spectrum 302 is measured from the light reflected from the product substrate. The spectrum 304 is measured from light reflected from a base silicon substrate (which is a wafer having only a silicon layer). A spectrum 306 is a spectrum from light received by the optical head 53 when there is no substrate positioned on the optical head 53. Under this condition, referred to herein as dark conditions, the received light is typically ambient light.

  The computing device can process the signal described above or a portion thereof to determine the end point of the polishing step. Without being bound by any particular theory, the spectrum of light reflected from the substrate 10 develops as polishing proceeds. FIG. 3B provides an example of the evolution of the spectrum as the polishing of the subject film proceeds. Different lines in the spectrum represent different points in time during polishing. As can be seen, the spectral characteristics of the reflected light change as the thickness of the coating changes, and a particular spectrum is indicated by a particular film thickness. As the coating polish proceeds, when the peak of the reflected light spectrum (ie, the local maximum) is observed, as the material is removed, the peak height typically changes and the peak becomes more There is a tendency to spread. In addition to spreading, typically, as polishing proceeds, the wavelength at which a particular peak is located increases. In some implementations, typically, as polishing proceeds, the wavelength at which a particular peak is located increases. For example, peak 310 (1) shows the peak of the spectrum at a particular time during polishing, and peak 310 (2) shows the same peak at a later time during polishing. Peak 310 (2) is located at a longer wavelength and is wider than peak 310 (1).

  Relative change in peak wavelength and / or width (eg, width measured at a fixed distance down from the peak, or width measured at a height intermediate between the peak and the nearest valley), peak absolute wavelength and The end point for polishing can be determined according to an empirical formula using / or width or both. The best peak (s) for use in determining the endpoint will vary depending on the material being polished and the pattern of those materials.

  In some implementations, changes in peak wavelength can be used to determine the endpoint. For example, when the difference between the peak start wavelength and the peak current wavelength reaches the target difference, the polishing apparatus 20 can stop polishing the substrate 10. Alternatively, the wavelength difference of the light reflected from the substrate 10 can be obtained using features other than the peak. For example, the wavelength of the valley, the inflection point, or the x-axis or y-axis intersection can be monitored by the photodetector 52. When the wavelength changes by a predetermined amount, the polishing apparatus 20 stops polishing the substrate 10. can do.

  In some implementations, the property being monitored is not the wavelength, or in addition to the wavelength, the width or intensity of the feature. The features can be shifted by about 40 nm to 120 nm, but other shifts are possible. For example, the upper limit may be much higher, especially in the case of dielectric polishing.

  FIG. 4A provides an example of a measured spectrum 400 a of light reflected from the substrate 10. The optical monitoring system can pass the spectrum 400a through a high pass filter to reduce the overall slope of the spectrum, resulting in the spectrum 400b shown in FIG. 4B. For example, during processing of multiple substrates in a batch, there may be large spectral differences between wafers. A high pass filter can be used to normalize the spectrum to reduce spectral variations across substrates in the same batch. An exemplary high pass filter may have a cutoff of 0.005 Hz and a filter order of 4. High-pass filters are used not only to help remove sensitivity to underlayer variations, but also to “flatten” the proper signal to make feature tracking easier.

  A contour plot can be generated and displayed to the user for the user to select which features of the end point to track to determine the end point. FIG. 5B provides an example of a contour plot 500b generated from a plurality of spectral measurements of light reflected from the substrate 10 being polished, and FIG. 5A illustrates from a particular moment in the contour plot 500b. An example of the measured spectrum 500a is provided. Contour plot 500b includes features such as peak region 502 and valley region 504 derived from related peaks 502 and valleys 504 in spectrum 500a. As time progresses, the substrate 10 is polished and the light reflected from the substrate changes as indicated by the change in spectral features in the contour plot 500b.

The test substrate can be polished to generate a contour plot 500b, during which the light reflected from the test substrate is measured by the photodetector 52 and the spectral sequence of light reflected from the substrate 10 is sequenced. Can be generated. The sequence of spectra can be stored, for example, in a computer system, which can optionally be part of an optical monitoring system. Polishing setup substrate, starting at time T _1, may last beyond the estimated end point time.

  When polishing of the test substrate is complete, the computer renders the contour plot 500b for presentation to the operator of the polishing apparatus 20, for example on a computer monitor. In some implementations, the computer, for example, assigns red to higher intensity values in the spectrum, assigns blue to lower intensity values in the spectrum, and intermediate colors (orange to green) to intermediate intensity values in the spectrum. The contour plot is color coded by assigning. In other implementations, the computer assigns the darkest gray shade to the lower intensity value in the spectrum, assigns the lightest gray shade to the higher intensity value in the spectrum, and intermediates to the intermediate intensity value in the spectrum. Generate a grayscale contour plot by assigning the shade of. Alternatively, the computer has a maximum z value for higher intensity values in the spectrum, a minimum z value for lower intensity values in the spectrum, and a 3D having an intermediate z value for intermediate values in the spectrum. A contour plot can also be generated. The 3D contour plot can be displayed, for example, in color, gray scale, or black and white. In some implementations, the operator of the polishing apparatus 20 can interact with the 3D contour plot to view different features of the spectrum.

  The reflected light contour plot 500b generated from monitoring the test substrate during polishing may include spectral features such as peaks, valleys, spectral zero crossings, and inflection points, for example. The feature can have properties such as wavelength, width, and / or intensity. As shown by contour plot 500b, as polishing pad 30 removes material from the top surface of the setup substrate, the light reflected from the setup substrate may change over time, thereby changing the characteristics of the feature over time. To do.

  Prior to polishing the device substrate, the operator of the polishing apparatus 20 may view the contour plot 500b and select the feature characteristics to be tracked during processing of a batch of substrates having die features similar to the setup substrate. it can. For example, the operator of the polishing apparatus 20 can select the wavelength of the peak 506 as the tracking target. A possible advantage of contour plot 500b, particularly color-coded plots or 3D contour plots, is that such a graphical display allows the user to more easily select the appropriate features. This is because a feature, for example, a feature having a characteristic that changes linearly with time, can be easily visually identified.

In order to select an endpoint criterion, the characteristics of the selected feature can be calculated by linear interpolation based on the thickness of the test substrate before and after polishing. For example, the thicknesses D ₁ and D ₂ of the layers on the test substrate are determined before polishing (for example, the thickness of the test substrate before time T ₁ when polishing starts) and after polishing (for example, time T ₂ when polishing ends). The thickness of the test substrate can be measured respectively, and the value of the characteristic can be measured at a time T ′ when the target thickness D ′ is realized. T ′ can be calculated from T ′ = T ₁ + (T ₂ −T ₁ ) × (D ₂ −D ′) / (D ₂ −D ₁ ), and the characteristic value V ′ It can be obtained from the spectrum measured in A target difference δV for a selected feature characteristic, such as a specific change in the wavelength of peak 506, can be determined from V′−V ₁ , where V ₁ is the initial characteristic (at time T ₁ ). Value. Therefore, the target difference δV may be a change from the initial value V ₁ of the characteristic before polishing at the time point T ₁ to the characteristic value V ′ at the time point T ′ at which polishing is expected to be completed. An operator of the polishing apparatus 20 can input a target difference 604 (for example, δV) of the characteristic change of the characteristic portion to a computer associated with the polishing apparatus 20.

In order to determine the value of V ′ and thereby further determine the value of point 602, a straight line 508 can be fitted to the measured data using a robust straight line fit. The point 602 can be determined using the difference of the value of the straight line 508 at time T ′ minus the value of the straight line 508 at T ₁ .

  A feature, such as spectral peak 506, can be selected based on a correlation between a target difference in feature characteristics and the amount of material removed from the setup substrate during polishing. The operator of the polishing apparatus 20 selects different features and / or feature characteristics to find a feature characteristic that has a good correlation between the target difference in properties and the amount of material removed from the setup substrate. can do.

  In other implementations, endpoint determination logic determines the spectral features to track and the endpoint criteria.

  Considering now the polishing of the device substrate, FIG. 6A is an exemplary graph 600a of various values 602a-d of the tracked feature characteristics during polishing of the device substrate 10. FIG. The substrate 10 can be part of a batch of substrates to be polished, where the operator of the polishing apparatus 20 can track the characteristics of the feature to be tracked, such as the peak or valley wavelength, from the contour plot 500b of the setup substrate. Selected.

When the substrate 10 is polished, the photodetector 52 measures the spectrum of light reflected from the substrate 10. The endpoint determination logic uses the light spectrum to determine a sequence of values for the characteristic of the feature. The value of the characteristic of the selected feature may change as the material is removed from the surface of the substrate 10. Using the sequence of values of characteristics of the feature, the difference between the initial value V ₁ of the characteristic of the feature, calculates a difference value 602A～d.

  When the substrate 10 is polished, the endpoint determination logic can determine the current value of the characteristic of the feature being tracked. In some implementations, the end point can be signaled when the current value of the feature changes by a target difference 604 from the initial value. In some implementations, a straight line 606 is fitted to the difference values 602a-d using, for example, a robust straight line fit. A function of line 606 can be determined based on various values 602a-d to predict the polishing endpoint. In some implementations, the function is a linear function of time and characteristic difference. The function of the straight line 606, such as the slope and intersection, may change as new difference values are calculated during polishing of the substrate 10. In some implementations, the point in time when the straight line 606 reaches the target difference 604 provides an estimated end point 608. When the function of the straight line 606 changes to correspond to the new difference value, the estimated end point 608 may change.

  In some implementations, a function of the straight line 606 is used to determine the amount of material removed from the substrate 10, and the change in current value determined by the function is used to signal the end point when the target difference is reached. Decide when you need to. Line 606 tracks the amount of material removed. Alternatively, when removing a particular thickness of material from the substrate 10, the change in the current value determined by the function is used to determine the amount of material removed from the top surface of the substrate 10 and when to signal the end point. be able to. For example, the operator can set the target difference as a 50 nanometer change in the wavelength of the selected feature. For example, the change in wavelength of the selected peak can be used to determine how much material has been removed from the top layer of the substrate 10 and when to signal the endpoint.

At a time T ₁ before polishing the substrate 10, the difference in the characteristic value of the selected feature is zero. As the polishing pad 30 begins to polish the substrate 10, the value of the identified feature characteristic may change as the material is polished from the top surface of the substrate 10. For example, during polishing, the characteristic wavelength of the selected feature may move to a higher or lower wavelength. Excluding the noise effect, the wavelength of the feature, and hence the wavelength difference, tends to change monotonically and often linearly. At time T ′, the end point determination logic can determine that the characteristic of the identified feature has changed by the target difference δV and signal the end point. For example, when the feature wavelength is changing by a target difference of 50 nanometers, the end point is signaled and the polishing pad 30 stops polishing the substrate 10.

When processing a batch of substrates, the optical monitoring system 50 can, for example, track the same spectral features across all substrates. Spectral features can be associated with the same die feature on the substrate. The starting wavelength of the spectral feature can vary from substrate to substrate across batches based on variations in the underlying layer of the substrate. In some implementations, in order to minimize the degree of variability between multiple boards, the endpoint determination logic is a function value that is applied to a selected feature value or a feature value. The end point can be signaled when the end point measurement criterion EM changes, not the target difference. The end point determination logic can use the expected initial value EIV determined from the setup board. Once T ₁ which is characteristic of the feature is identified to be tracked on the substrate 10, the end point decision logic determines the actual initial value AIV with respect to the substrate to be processed. The end point determination logic can use the initial value weight IVW to reduce the effect of the actual initial value on the end point determination while taking into account substrate variations across a batch. Substrate variation may include, for example, the thickness of the substrate or the thickness of the underlying structure. The initial value weight can be correlated to substrate variations to improve processing uniformity between substrates. The end point metric can be determined, for example, by multiplying the initial value weight by the difference between the actual initial value and the expected initial value, and adding the target difference, for example, EM = IVW × (AIV−EIV). ) + ΔV.

  In some implementations, the weighted combination is used to determine the endpoint. For example, the endpoint determination logic can calculate the initial value of the characteristic from the function, the current value of the characteristic from the function, and a first difference between the initial value and the current value. The endpoint determination logic can calculate a second difference between the initial value and the target value to generate a weighted combination of the first difference and the second difference.

  FIG. 6B is an exemplary graph 600b of the characteristic measurement difference vs. time taken at two portions of the substrate 10. For example, the optical monitoring system 50 tracks one feature located towards the edge portion of the substrate 10 and another feature located towards the central portion of the substrate 10 from the substrate 10. It can be determined how much material has been removed. When testing the setup substrate, the operator of the polishing apparatus 20 can, for example, identify two features to be tracked that correspond to different portions of the setup substrate. In some implementations, the spectral features correspond to the same type of die features on the setup substrate. In other implementations, the spectral features are associated with different types of die features on the setup board. When the substrate 10 is being polished, the photodetector 52 can measure the sequence of spectra of reflected light from the two portions of the substrate 10 that correspond to selected features of the setup substrate. The sequence of values associated with the characteristics of the two features can be determined by endpoint determination logic. The sequence of first difference values 610a-b can be calculated with respect to the characteristics of the features in the first part of the substrate 10 by subtracting the initial characteristic values from the current characteristic values as the polishing time proceeds. Similarly, the sequence of second difference values 612a-b can be calculated with respect to the characteristics of the features in the second portion of the substrate 10.

  The first straight line 614 can be applied to the first difference values 610a-b, and the second straight line 616 can be applied to the second difference values 612a-b. First straight line 614 and second straight line 616 are determined by a first function and a second function, respectively, to determine an estimated polishing end point 618 or adjustment of polishing rate 620 of substrate 10. Can do.

  During polishing, an endpoint calculation based on the target difference 622 is performed at a time TC using a first function for the first portion of the substrate 10 and a second function for the second portion of the substrate. If the estimated endpoints for the first portion of the substrate and the second portion of the substrate are different (eg, the first portion reaches the target thickness before the second portion), the first function and the second The polishing rate 620 can be adjusted so that the function has the same end point 618. In some implementations, the polishing rate of both the first and second portions of the substrate is adjusted to reach the endpoint in both portions simultaneously. Alternatively, the polishing rate of the first part or the second part can be adjusted.

  The polishing rate can be adjusted, for example, by increasing or decreasing the pressure in the corresponding region of the carrier head 70. It can be assumed that the change in polishing rate is directly proportional to the change in pressure (eg, a simple Prestonian model). For example, when the first region of the substrate 10 is expected to reach the target thickness at time TA and the system is setting the target time TT, the carrier head pressure before time T3 in the corresponding region is set to TT / TA can be multiplied to provide the carrier head pressure after time T3. In addition, a control model for substrate polishing can be developed that takes into account the effects of platen or head rotation speed, side effects of combinations of different head pressures, polishing temperature, slurry flow, or other parameters that affect polishing speed. it can. At a later point in the polishing process, the speed can be adjusted again if appropriate.

  In some implementations, the computing device uses a range of wavelengths so that selected spectral features in the measured spectrum of light reflected from the device substrate 10 can be easily identified. The computing device searches for the selected spectral feature within its wavelength range and selects the selected spectral feature for other spectral features similar to the selected spectral feature in the measured spectrum, eg, intensity, Distinguish from width or wavelength.

  FIG. 7A shows an example of a spectrum 700 a measured from the light received by the photodetector 52. The spectrum 700a includes selected spectral features 702, eg, spectral peaks. The selected spectral feature 702 can be selected by endpoint determination logic for tracking during CMP of the substrate 10. The characteristic 704 (eg, wavelength) of the selected spectral feature 702 can be identified by endpoint determination logic. When the characteristic 704 changes by the target difference, the end point determination logic signals the end point.

  In some implementations, the endpoint determination logic determines the wavelength range 706 and searches the selected spectral feature 702 across the wavelength range 706. The wavelength range 706 can have a width between about 50 and about 200 nanometers. In some implementations, the wavelength range 706 is predetermined, eg, specified by an operator, such as by receiving user input to select the wavelength range, or wavelength from memory that associates the wavelength range with a batch of substrates. It is specified as a process parameter for a batch of substrates by searching the range. In some implementations, the wavelength range 706 is based on historical data, eg, the average of consecutive spectral measurements or the maximum distance between measurements. In some implementations, the wavelength range 706 is based on information about the test board, for example, twice the target difference δV.

  FIG. 7B is an example of a spectrum 700 b measured from the light received by the photodetector 52. For example, spectrum 700b is measured during rotation of platen 24 immediately after spectrum 700a is taken. In some implementations, the endpoint determination logic determines the value of the characteristic 704 (eg, 520 nm) in the previous spectrum 700 a and sets the wavelength range 706 such that the center of the wavelength range 708 is positioned closer to the characteristic 704. Adjust.

In some implementations, the endpoint determination logic uses a function of line 606 to determine the expected current value of characteristic 704. For example, the endpoint determination logic may use the current polishing time to determine the expected difference, and add the expected difference to the initial value V ₁ of characteristic 704 to determine the expected current value of characteristic 704. it can. The endpoint determination logic can center the wavelength range 708 to the expected current value of the characteristic 704.

  FIG. 7C is another example of a spectrum 700 c measured from the light received by the photodetector 52. For example, spectrum 700c is measured during rotation of platen 24 immediately after spectrum 700a is taken. In some implementations, the endpoint determination logic uses the previous value of characteristic 704 for the center of wavelength range 710.

  For example, the endpoint determination logic determines the average variance of the characteristic 704 values determined during two successive passes of the optical head 53 under the substrate 10. The end point determination logic can set the width of the wavelength range 710 to twice the average dispersion. In some implementations, the endpoint determination logic uses the standard deviation of the variance of the value of the characteristic 704 in determining the width of the wavelength range 710.

  In some implementations, the width of the wavelength range 706 is the same for all spectral measurements. For example, the widths of the wavelength range 706, the wavelength range 708, and the wavelength range 710 are the same. In some implementations, the width of the wavelength range is different. For example, when the characteristic 704 is estimated to have changed by 2 nanometers from the previous measurement of the characteristic, the width of the wavelength range 708 is 60 nanometers. When the characteristic 704 is estimated to have changed by 5 nanometers from the previous measurement of the characteristic, the width of the wavelength range 708 is 80 nanometers, which is larger than the range for smaller changes in the characteristic It is a wavelength range.

  In some implementations, the wavelength range 706 is the same for all spectral measurements during polishing of the substrate 10. For example, the wavelength range 706 is 475 nanometers to 555 nanometers, and the endpoint determination logic determines that the selected spectral feature 702 is 475 nanometers to 555 nanometers for all spectral measurements taken during polishing of the substrate 10. Search at wavelengths between nanometers. However, other wavelength ranges are possible. The wavelength range 706 can be selected by user input as a subset of the total spectral range measured by the in situ monitoring system.

  In some implementations, the endpoint determination logic may select the selected spectrum within the modified wavelength range for some of the spectrum measurements and within the wavelength range used for the previous spectrum for the remaining spectra. The feature part 702 is searched. For example, the endpoint determination logic is selected within the wavelength range 706 for the spectrum measured during the first rotation of the platen 24 and within the wavelength range 708 for the spectrum measured during subsequent rotation of the platen 24. The spectral feature 702 is searched. Here, both measurements were performed in the first region of the substrate 10. Continuing the example, the endpoint determination logic searches for another selected spectral feature within the wavelength range 710 for two spectra measured during the same platen rotation. Here, both measurements were performed in a second region of the substrate 10 different from the first region.

  In some implementations, the selected spectral feature 702 is a spectral valley or spectral zero crossing. In some implementations, the characteristic 704 is measured at a peak or valley intensity or width (eg, a width measured at a fixed distance from the peak down, or halfway between the peak and the nearest valley height). Width).

  FIG. 8 shows a method 800 for selecting a target difference δV for use in determining an endpoint for a polishing process. The property of the substrate having the same pattern as the production substrate is measured (step 802). The substrate to be measured is referred to herein as a “setup” substrate. The setup substrate may simply be the same or the same substrate as the production substrate, or may be a single substrate from a batch of production substrates. The property being measured may include the thickness of the target coating at a particular location on the substrate prior to polishing. Typically, thickness at multiple locations is measured. Typically, these locations are selected such that the same type of die feature is measured for each location. Measurements can be made at a measurement station. The in situ optical monitoring system can measure the spectrum of light reflected from the substrate prior to polishing.

  The setup substrate is polished according to the target polishing step and the spectrum obtained during polishing is collected (step 804). Polishing and spectrum collection can be performed with the polishing apparatus described above. The spectrum is collected by the in situ monitoring system during polishing. The substrate can be excessively polished, i.e. polished beyond the estimated end point, thereby obtaining a spectrum of light reflected from the substrate when the target thickness is reached.

  The properties of the excessively polished substrate are measured (step 806). Properties include the post-polishing thickness of the coating of interest at one or more specific locations used for pre-polishing measurements.

  Using the measured thickness and the collected spectrum, specific features such as peaks or valleys to be monitored during polishing are selected by examining the collected spectrum (step 808). The features can be selected by the operator of the polishing apparatus, or feature selection can be automated (eg, based on conventional peak finding algorithms and peak selection empirical formulas). For example, the operator of the polishing apparatus 20 may be presented with a contour plot 500b and can select the features to track from the contour plot 500b as described above with reference to FIG. 5B. If a particular region of the spectrum is expected to contain features that are desired to be monitored during polishing (eg, by previous experience or calculation of feature behavior based on theory), only the features within that region Should be considered. Typically, features are selected that correlate with the amount of material removed from above the setup substrate as the substrate is polished.

  A linear interpolation is performed using the measured film thickness before polishing and the substrate thickness after polishing, and an approximate time point at which the target film thickness is realized can be obtained. The approximate time point can be compared to a spectral contour plot to determine the endpoint value of the selected feature characteristic. The difference between the end point value and the initial value of the characteristic of the feature part can be used as the target difference. In some implementations, a function is applied to the characteristic value of the feature to normalize the characteristic value of the characteristic. The difference between the end point value of the function and the initial value of the function can be used as the target difference. The same features are monitored during polishing of the remaining substrates in the substrate batch.

  Optionally, the spectrum is processed to increase accuracy and / or accuracy. For example, the spectrum can be processed to normalize the spectrum to a common reference, average the spectrum, and / or filter noise from the spectrum. In one implementation, a low pass filter can be applied to the spectrum to reduce or eliminate sudden spikes.

  Typically, the spectral features to be monitored are empirically selected with respect to specific endpoint determination logic so that when the computing device signals the endpoint by applying specific feature-based endpoint logic. The target thickness is achieved. The endpoint determination logic uses the target difference in the characteristic of the feature to determine when the endpoint should be signaled. The change in characteristics can be measured based on the initial characteristic value of the feature when polishing starts. Alternatively, the end point can be signaled based on the expected initial value EIV and the actual initial value AIV in addition to the target difference δV. The end point logic can multiply the difference between the actual initial value and the expected initial value by the start value weight SVW to compensate for variations in the lower layer for each substrate. For example, the endpoint determination logic can terminate polishing when the endpoint metric EM = SVW × (AIV−EIV) + δV.

  In some implementations, the weighted combination is used to determine the endpoint. For example, the endpoint determination logic can calculate the initial value of the characteristic from the function, the current value of the characteristic from the function, and a first difference between the initial value and the current value. The endpoint determination logic can calculate a second difference between the initial value and the target value to generate a weighted combination of the first difference and the second difference. The end point can be signaled when the weighted value reaches the target value. The endpoint determination logic can determine when the endpoint should be signaled by comparing the monitored difference (s) with the target difference in characteristics. The end point is signaled when the monitored difference matches or exceeds the target difference. In one implementation, the monitored difference must match or exceed the target difference for some period of time (eg, two platen revolutions) before the end point is signaled.

  FIG. 9 illustrates a method 901 for selecting a target value for a characteristic associated with a selected spectral feature for a specific target thickness and specific endpoint determination logic. In the same manner as described above in Steps 802 to 806, the setup substrate is measured and polished (Step 903). In particular, the spectrum is collected and the time when each collected spectrum is measured is stored.

The polishing rate of the polishing apparatus for a specific setup substrate is calculated (step 905). By using the thickness D ₁ before polishing and the thickness D ₂ after polishing and the actual polishing time PT, the average polishing rate PR can be calculated, for example PR = (D ₂ −D ₁ ) / PT.

  As described below, an endpoint is calculated for a particular setup board to provide a calibration point to determine a target value for the selected feature characteristic (step 907). The end point time can be calculated based on the calculated polishing rate PR, the starting thickness ST of the target coating before polishing, and the target thickness TT of the target coating. The end point time can be calculated as a simple linear interpolation assuming that the polishing rate is constant throughout the polishing process, for example ET = (ST−TT) / PR.

  Optionally, evaluate the calculated endpoint time by polishing another substrate in a batch of patterned substrates, stopping polishing at the calculated endpoint time, and measuring the thickness of the coating of interest. can do. If the thickness is within the desired range of the target thickness, the calculated end point is also desirable. Otherwise, the calculated endpoint time can be recalculated.

  The target characteristic value for the selected feature is recorded from the spectrum collected from the setup board at the calculated end point (step 909). If the parameter of interest includes a change in the position or width of the selected feature, that information can be determined by examining a spectrum collected during a period prior to the calculated endpoint. The difference between the initial value of the characteristic and the target value is recorded as the target difference related to the characteristic portion. In some implementations, only one target difference is recorded.

  FIG. 10 shows a method 1000 for using peak-based endpoint determination logic to determine the endpoint of a polishing step. Using the polishing apparatus described above, another substrate in the batch of patterned substrates is polished (step 1002).

  The identifier of the selected spectral feature, the wavelength range, and the characteristics of the selected spectral feature are received (step 1004). For example, endpoint determination logic receives the identification from the computer using the processing parameters for the substrate. In some implementations, the processing parameters are based on information determined during processing of the setup board.

  First, the substrate is polished, the light reflected from the substrate is measured to generate a spectrum, and the characteristic value of the selected spectral feature is determined within the measured spectral wavelength range. The following steps are performed during each rotation of the platen.

  One or more spectra of light reflected from the polished substrate surface is measured to obtain one or more current spectra for the current platen rotation (step 1006). Optionally, one or more spectra measured with respect to the current platen rotation are processed to increase accuracy and / or accuracy, as described above with reference to FIG. If only one spectrum is measured, that one spectrum is used as the current spectrum. If multiple current spectra are measured for platen rotation, the spectra are grouped and averaged with each group, and the average is designated as the current spectrum. The spectra can be grouped by radial distance from the center of the substrate.

  As an example, a first current spectrum can be obtained from the spectrum measured at points 202 and 210 (FIG. 2), and a second current spectrum can be obtained from the spectrum measured at points 203 and 209, Three current spectra can be obtained from the spectra measured at points 204 and 208, and so on. For each current spectrum, the value of the characteristic of the selected spectral peak can be determined and polishing can be individually monitored in each region of the substrate. Alternatively, the worst case value for the characteristics of the selected spectral peak can be determined from the current spectrum and used by the endpoint determination logic.

  During each rotation of the platen, one or more additional spectra are added to the sequence of spectra for the current substrate. As polishing proceeds, at least some of the spectra in the sequence differ due to the removal of material from the substrate during polishing.

  As described above with reference to FIGS. 7A-C, a modified wavelength range for the current spectrum is generated (step 1008). For example, the endpoint logic determines a modified wavelength range for the current spectrum based on the value of the previous characteristic. The modified wavelength range can be centered on the previous characteristic value. In some implementations, the modified wavelength range is determined based on the expected characteristic value, for example, the center of the wavelength range coincides with the expected characteristic value.

  In some implementations, various methods are used to determine some of the wavelength ranges for the current spectrum. For example, the wavelength range for a spectrum measured from light reflected at the edge region of the substrate is determined by centering the wavelength range on the characteristic value from the previous spectrum measured at the same edge region of the substrate. The Continuing the example, the wavelength range for the spectrum measured from the light reflected at the central region of the substrate is determined by centering the wavelength range on the expected characteristic value for the central region.

  In some implementations, the width of the wavelength range for the current spectrum is the same. In some implementations, some of the widths of the wavelength range for the current spectrum are different.

  Identification of the wavelength range to explore the characteristics of the selected spectral feature can make the endpoint detection or polishing rate change determination more accurate, eg, the system is incorrect during subsequent spectral measurements The possibility of selecting a spectral feature is reduced. By tracking spectral features over a range of wavelengths rather than across the spectrum, spectral features can be identified more easily and quickly. The processing resources required to identify the selected spectral feature can be reduced.

  The current characteristic value for the selected peak is extracted from the modified wavelength range (step 1010) and the current characteristic value is compared with the target characteristic value using the endpoint determination logic described above in the context of FIG. 8 (step 1012). For example, from a sequence of spectra, a sequence of values for the current feature characteristic is determined and a function is applied to the sequence of values. The function may be, for example, a linear function that can approximate the amount of material removed from the substrate during polishing based on the difference between the current property value and the initial property value.

  As long as the endpoint determination logic determines that the endpoint condition is not met (“No” in the branch of step 1014), polishing continues and steps 1006, 1008, 1010, 1012, and 1014 are repeated as necessary. It is. For example, the end point determination logic determines based on the function that the target difference related to the characteristic of the feature has not yet been reached.

  In some implementations, when the spectrum of reflected light from multiple portions of the substrate is measured, the endpoint determination logic may determine whether one of the substrates is polished at the same time or nearly simultaneously. Alternatively, it may be determined that it is necessary to adjust the polishing rate of a plurality of portions.

  When the end point determination logic determines that the end point condition is met (“Yes” in the branch at step 1014), the end point is signaled and polishing is stopped (step 1016).

The spectrum can be normalized to remove or reduce the effects of unwanted light reflections. Light reflections contributed by media other than one or more target coatings include light reflection from the polishing pad window and light reflection from the base silicon layer of the substrate. The contribution from the window can be estimated by measuring the spectrum of light received by the in situ monitoring system under dark conditions (i.e. when no substrate is placed over the in situ monitoring system). The contribution from the silicon layer can be estimated by measuring the spectrum of light reflected from the bare silicon substrate. Usually these contributions are obtained before the start of the polishing step. The measured raw spectrum is normalized as follows.
Normalized spectrum = (A-Dark) / (Si-Dark)
Here, A is a raw spectrum, Dark is a spectrum obtained under dark conditions, and Si is a spectrum obtained from a bare silicon substrate.

  In the above-described embodiment, end point detection is performed using a change in the wavelength peak in the spectrum. It is also possible to use changes in the wavelength troughs (ie local minima) in the spectrum instead of or in association with the peaks. In addition, when detecting the end point, changes in a plurality of peaks (or valleys) can also be used. For example, each peak can be monitored individually, and the end point can be signaled when most changes in the peak meet the end point condition. In other implementations, inflection points or spectral zero crossing changes can be used to determine endpoint detection.

  In some implementations, the algorithm setup process 1100 (FIG. 11) is followed by polishing of one or more substrates using a triggered feature tracking technique 1200 (FIG. 12).

  Initially, the characteristics of the feature of interest in the spectrum are selected for use in tracking the polishing of the first layer, for example using one of the techniques described above (step 1102). For example, the feature may be a peak or valley, and the characteristic may be the position or width of the wavelength or frequency of the peak or valley, or the intensity of the peak or valley. If the characteristics of the target feature are applicable to a variety of product substrates with different patterns, the device manufacturer can pre-select the features and characteristics.

  Further, a polishing rate dD / dt near the polishing end point is obtained (step 1104). For example, multiple set-up substrates can be polished according to the polishing process to be used for polishing the product substrate, but with different polishing times close to the expected endpoint polishing time. The setup board can have the same pattern as the product board. For each setup substrate, the layer thickness before and after polishing can be measured, and from these differences, the amount removed is calculated, and the amount removed and the associated polishing time for that setup substrate is the data Stored to provide a set. A linear function of the removed quantity as a function of time can be fitted to the data set. The slope of the linear function gives the polishing rate.

The algorithm setup process includes measuring an initial thickness D ₁ of the first layer of the setup substrate (step 1106). The setup board can have the same pattern as the production board. The first layer may be a dielectric, such as a low-k material, such as carbon-doped silicon dioxide, such as Black Diamond ™ (Applied Materials, Inc.) or Coral ™ (Novellus Systems, Inc.). .

  Optionally, depending on the composition of the first material, another material different from the first material and the second material, for example a dielectric material, for example a low-k cap material, for example one of tetraethylorthosilicate (TEOS) One or more additional layers are deposited over the first layer (step 1107). Together, the first layer and the one or more additional layers form a stack.

  Next, a different second material, eg, a barrier layer, eg, a second layer of nitride, eg, tantalum nitride or titanium nitride, is deposited over the first layer or stack (step 1108). In addition, a conductive layer, such as a metal layer, such as copper, can be deposited over the second layer (and within the trench provided by the pattern of the first layer) (step 1109).

  Measurements can also be made with a measurement system other than the optical monitoring system used during polishing, such as an in-line measurement station or an independent measurement station, such as a shape measuring instrument or an optical measurement station using ellipsometry. In some metrology techniques such as profilometry, the initial thickness of the first layer is measured before the second layer is deposited, while in other metrology techniques such as ellipsometry, the second Measurements can be taken before or after the layer is deposited.

  Next, the setup substrate is polished according to the target polishing process (step 1110). For example, at the first polishing station, the first polishing pad can be used to polish and remove the conductive layer and a portion of the second layer (step 1110a). A second polishing pad can then be used to polish and remove the second layer and a portion of the first layer at a second polishing station (step 1110b). However, it should be noted that in some implementations there is no conductive layer, for example, the second layer is the outermost layer when polishing begins.

Spectra are collected using the techniques described above (step 1112), at least during removal of the second layer, and possibly throughout the polishing operation at the second polishing station. In addition, a separate detection technique is used to detect the exclusion of the second layer and the exposure of the first layer (step 1114). For example, the exposure of the first layer can be detected by a sudden change in motor torque or the total intensity of light reflected from the substrate. The characteristic value V ₁ of the target feature of the spectrum at the point in time T ₁ when the exclusion of the second layer is detected is stored. Exclusion may also store the time T ₁ that has been detected.

After detection of exclusion, polishing can be stopped at a default time (step 1118). The default time is large enough so that polishing is stopped after exposure of the first layer. The default time is selected so that the thickness after polishing is sufficiently close to the target thickness, where the polishing rate can be assumed to be linear between the thickness after polishing and the target thickness. . The characteristic value V ₂ of the target feature of the spectrum at the time polishing is stopped can be detected and stored, and the time T ₂ at which polishing is stopped can also be detected and stored.

For example, using the same measurement system as that used to measure the initial thickness, measuring the thickness D ₂ after polishing of the first layer (step 1120).

A default target change of the characteristic value ΔV _D is calculated (step 1122). This default target change in value is used in the endpoint detection algorithm for the production substrate. The default target change can be calculated from the difference between the value at the time of removal of the second layer and the value at the time polishing is stopped, ie ΔV _D = V ₁ −V ₂ .

  The thickness change rate dD / dV as a function of the monitored property near the end of the polishing operation is calculated (step 1124). For example, assuming that the peak wavelength position is being monitored, the rate of change can be expressed as the material removed (in angstroms) relative to the shift in peak wavelength position (in angstroms). As another example, assuming that the peak frequency width is being monitored, the rate of change can be expressed as removed material (in angstroms) relative to peak width frequency shift (in hertz). Can do.

In one implementation, the rate of change of value dV / dt as a function of time can be simply calculated from the value at the time of second layer exposure and the value at the end of polishing, for example dV / dt ₌ a _{(D 2 -D 1) / (} T 2 -T 1). In another implementation, data from near the end of polishing of the setup substrate, eg, from the last 25% or less of the time between T ₁ and T ₂ , is used to fit a straight line to the measurement as a function of time. Can do. The slope of the straight line gives the rate of change of value dV / dt as a function of time. In either case, the rate of change in thickness dD / dV as a function of the monitored property is then calculated by dividing the polishing rate by the rate of change in value. That is, dD / dV = (dD / dt) / (dV / dt). Once the rate of change dD / dV is calculated, this should be constant for the product. That is, it should not be necessary to recalculate dD / dV for different lots of the same product.

  After the setup process is complete, the product substrate can be polished.

Optionally, an initial thickness d ₁ of the first layer of at least one substrate from the multiple product substrates is measured (step 1202). The product substrate has at least the same substrate structure and optionally the same pattern as the setup substrate. In some implementations, not all manufacturing substrates are measured. For example, one substrate from a lot can be measured and its initial thickness is used for all other substrates from the lot. As another example, one substrate from a cassette can be measured and its initial thickness is used for all other substrates from the cassette. In other implementations, all production substrates are measured. The measurement of the thickness of the first layer of the production substrate can be made before or after the setup process is completed.

  As described above, the first layer may be a dielectric, such as a low-k material, such as carbon-doped silicon dioxide, such as Black Diamond ™ (Applied Materials, Inc.) or Coral ™ (Novelous Systems, Inc.). ). Measurements can also be made with a measurement system other than the optical monitoring system used during polishing, such as an in-line measurement station or an independent measurement station, such as a shape measuring instrument or an optical measurement station using ellipsometry.

  Optionally, depending on the composition of the first material, one or more additions of another material that is different from the first material and the second material, such as a low-k cap material, such as tetraethylorthosilicate (TEOS). Are deposited on the first layer on the production substrate (step 1203). Together, the first layer and the one or more additional layers form a stack.

  Next, a different second material, eg, a barrier layer, eg, a second layer of nitride, eg, tantalum nitride or titanium nitride, is deposited over the first layer or stack of production substrates (step 1204). In addition, a conductive layer, such as a metal layer, such as copper, can be deposited over the second layer of the production substrate (and in the trench provided by the pattern of the first layer) (step 1205). However, it should be noted that in some implementations there is no conductive layer, for example, the second layer is the outermost layer when polishing begins.

  In some metrology techniques such as profilometry, the initial thickness of the first layer is measured before the second layer is deposited, while in other metrology techniques such as ellipsometry, the second Measurements can be taken before or after the layer is deposited. The deposition of the second layer and the conductive layer can be performed before or after completion of the setup process.

For each product substrate to be polished, a target characteristic difference ΔV is calculated based on the initial thickness of the first layer (step 1206). Typically, this calculation is done before polishing begins, but it can also be done after polishing has started but before the spectral feature tracking is started (at step 1210). In particular, for example from a host computer, the stored initial thickness d _{1 of the} product substrate is received together with the target thickness d _T. In addition, receiving a starting thickness D ₁ and an ending thickness D ₂ , a rate of change of thickness dD / dV as a function of the property being monitored, and a default target change ΔV _D of the value determined for the setup board. Can do.

In one embodiment, the target characteristic difference ΔV is calculated as follows.
ΔV = ΔV _D + (d ₁ −D ₁ ) / (dD / dV) + (D ₂ −d _T ) / (dD / dV)

In some embodiments, the thickness before polishing is not available. In this case, “(d ₁ −D ₁ ) / (dD / dV)” is deleted from the above equation. That is,
ΔV = ΔV _D + (D ₂ −d _T ) / (dD / dV)

  The product substrate is polished (step 1208). For example, at the first polishing station, the first polishing pad can be used to polish and remove the conductive layer and a portion of the second layer (step 1208a). A second polishing pad can then be used to polish and remove the second layer and a portion of the first layer at the second polishing station (step 1208b). However, it should be noted that in some implementations there is no conductive layer, for example, the second layer is the outermost layer when polishing begins.

In-situ monitoring techniques are used to detect the exclusion of the second layer and the exposure of the first layer (step 1210). For example, the exposure of the first layer at time t ₁ can be detected by a sudden change in the motor torque or the total intensity of light reflected from the substrate. For example, FIG. 13 shows a graph of the total intensity of light received from the substrate as a function of time while polishing the metal layer to expose the underlying barrier layer. This total intensity can be generated from the spectral signal acquired by the spectral monitoring system, for example, by integrating the spectral intensity over all measured wavelengths or over a pre-set wavelength range. Alternatively, the intensity at a specific monochromatic wavelength can be used rather than the total intensity. As shown by FIG. 13, the total strength decreases as the copper layer is eliminated, and the total strength levels off when the barrier layer is fully exposed. The intensity leveling can be detected and used as a trigger to start tracking the spectral features.

Beginning at least from detection of the exclusion of the second layer (possibly even earlier, eg, from the start of polishing of the production substrate using the second polishing pad), a spectrum is acquired during polishing using the in-situ monitoring technique described above. Obtain (step 1212). To determine the value of the characteristic of the feature to be tracked, the spectrum is analyzed using the techniques described above. For example, FIG. 14 shows a graph of the wavelength position of the spectral peak as a function of time during polishing. A value v ₁ of the characteristic of the tracked feature in the spectrum at time t ₁ when the exclusion of the second layer is detected is determined.

Here, it is possible to calculate the target value _{v T} on the characteristics (step 1214). Target value v _T is the value v ₁ characteristic at time t ₁ of the elimination of the second layer can be calculated by adding the target characteristic difference [Delta] V, which is namely v _{T =} v 1 ₊ ΔV.

When the characteristic of the feature to be tracked reaches the target value, the polishing is stopped (step 1216). In particular, for each measured spectrum, for example, at each platen rotation, the characteristic value of the tracked feature is determined to generate a sequence of values. As described above with respect to FIG. 6A, a function, eg, a linear function of time, can be applied to the sequence of values. In some implementations, a function can be applied to values in the time window. The location where the function meets the target value gives the end point at which polishing is stopped. The value v ₁ characteristic at the time t ₁ that the elimination of the second layer is detected, can also be determined by fitting a function to a portion of the sequence of values in the vicinity of time t _1, for example, a linear function .

  The method illustrated by FIGS. 12 and 13 includes deposition and removal of a second layer, but in some implementations the second layer is not present, for example, the first layer when polishing begins. Is the outermost layer. For example, the process of measuring the initial thickness of the first layer before polishing and calculating the target value of the feature from the initial thickness and the target thickness can be applied with or without the underlying second layer. There may be. That is, the second layer is optional. In particular, the steps of depositing the second layer and detecting the exposure of the first layer can be omitted. Such first layer may comprise polysilicon and / or dielectric material, for example consisting of substantially pure polysilicon, consisting of dielectric material, or a combination of polysilicon and dielectric material May consist of The dielectric material may be an oxide, such as silicon oxide, or a nitride, such as silicon nitride, or a combination of dielectric materials.

For example, the initial thickness d ₁ of the first layer of at least one substrate from multiple product substrates is measured (eg, as discussed with respect to step 1202). A target characteristic difference ΔV is calculated based on the initial thickness of the first layer (eg, as discussed with respect to step 1206). The polishing of the first layer of the product substrate is initiated and a spectrum is acquired during polishing of the first layer using the in situ monitoring technique described above. The characteristic value v ₁ can be measured during polishing of the first layer, for example immediately after the polishing of the first layer has started, or after a while, for example after a few seconds. Waiting for a few seconds can stabilize the signal from the monitoring system, which makes the measurement of the value v ₁ more accurate. A target value v _T for the characteristic can be calculated (eg, as discussed with respect to step 1214). For example, the target characteristic difference ΔV can be added to the characteristic value v ₁ , ie, v _T = v ₁ + ΔV. When the tracked feature characteristic reaches the target value (eg, as discussed with respect to step 1216), polishing is stopped. This approach allows removal to the target thickness while compensating for variations in absolute peak position from substrate to substrate resulting from differences in underlying structures from substrate to substrate.

  There are many techniques for removing noise from a sequence of values. Although a straight line was applied to the sequence as described above, a non-linear function can be applied to the sequence, or the sequence can be smoothed using a low-pass median filter (in this case, the filtered value is directly related to the target value). The end point can be determined by comparison).

  As used herein, the term “substrate” may include, for example, product substrates (eg, including multiple memory or processing device dies), test substrates, bare substrates, and lattice substrates. The substrate may be at various stages of integrated circuit fabrication, for example, the substrate may be a bare wafer or may include one or more deposited layers and / or patterned layers. The term “substrate” can include circular disks and rectangular sheets.

  The embodiments of the invention and all functional operations described herein may include digital electronic circuits or computer software, firmware, including structural means disclosed herein and structural equivalents thereof, or combinations thereof. Or can be implemented in hardware. Embodiments of the present invention can be implemented as one or more computer program products, i.e., executed by a data processing device, e.g., one programmable processing device, one computer, or multiple processing devices or computers. Or can be implemented as one or more computer programs tangibly embodied in an information carrier, such as a machine-readable storage device or a propagated signal, to control their operation. A computer program (also called a program, software, software application, or code) can be written in any form of programming language, including compiled and interpreted languages, and can be deployed in any form, for example, stand-alone It can be deployed as a program or as a module, component, subroutine, or other unit suitable for use in a computing environment. One computer program does not necessarily correspond to one file. The program may be stored in a part of a file that holds other programs or data, stored in a single file dedicated to the program of interest, or multiple adjusted files (eg, one or more modules, A subprogram, or a file that stores a portion of code). A computer program is deployed to be executed on one computer or on multiple computers at one location or distributed across multiple locations and interconnected by a communication network Can do.

  The process and logic flows described herein may be performed by one or more programmable processing devices, which perform several functions by processing input data and generating output. To execute one or more computer programs. Processes and logic flows can also be implemented by special purpose logic circuits, such as FPGAs (Field Programmable Gate Arrays) or ASICs (Application Specific Integrated Circuits), and devices are implemented as such special purpose logic circuits. You can also.

  The polishing apparatus and method described above can be applied to various polishing systems. The polishing pad, or the carrier head, or both can be moved to allow relative movement of the polishing surface and the substrate. For example, the platen may go around instead of rotating. The polishing pad may be a circular (or some other shape) pad secured to the platen. Some aspects of the endpoint detection system may be applicable to a linear polishing system, for example, the polishing pad is a linear belt or a continuous reel-to-reel belt. The abrasive layer may be a standard (eg, polyurethane with or without filler) abrasive material, a soft material, or a constant wear material. The term relative positioning is used. It should be understood that the polishing surface and the substrate can be held in a vertical orientation or some other orientation.

  A particular embodiment of the present invention has been described. Other embodiments are within the scope of the appended claims. For example, the actions recited in the claims can be performed in a different order and still achieve desirable results.

Claims (26)

A method for controlling polishing, comprising:
Polishing the substrate;
Receiving an identifier of a selected spectral feature, a wavelength range having a width, and a characteristic of the selected spectral feature to be monitored during polishing;
Measuring a spectral sequence of light from the substrate while the substrate is being polished;
Generating a sequence of selected spectral feature property values from the sequence of spectra, wherein at least some of the spectra from the sequence of spectra are used with respect to a previous spectrum in the sequence of spectra; Generating a modified wavelength range based on the position of the spectral feature within a previous previous wavelength range, searching for the selected spectral feature within the modified wavelength range, and the selected Determining a characteristic value of the obtained spectral feature;
Determining at least one of a polishing endpoint and an adjustment for polishing rate based on the sequence of values.   The method of claim 1, wherein the wavelength range has a fixed width.   3. The method of claim 2, wherein generating the modified wavelength range includes centering the fixed width at a position of the characteristic within a previous wavelength range.   Generating the modified wavelength range determines the position of the characteristic within a previous wavelength range, and within the modified wavelength range, the characteristic is positioned closer to the center of the modified wavelength range; Adjusting the wavelength range.   Generating the modified wavelength range determines a wavelength value for the selected spectral feature for at least some of the spectra in the sequence of spectra to generate a sequence of wavelength values; The method of claim 1, comprising: fitting a function to the sequence of wavelength values; and calculating an expected wavelength value for the selected spectral feature for subsequent spectral measurements from the function. Method.   The method of claim 5, wherein the function is a linear function.   The method of claim 5, wherein generating the modified wavelength range includes centering a width of the wavelength range to the expected wavelength value.   The method of claim 1, wherein the spectrum is measured for visible light and the wavelength range has a width of 50 to 200 nanometers. A method for controlling polishing, comprising:
Receiving user input to select a fixed wavelength range that is a subset of the wavelengths measured by the in situ monitoring system;
Receiving an identifier of the selected spectral feature and a characteristic of the selected spectral feature to be monitored during polishing;
Polishing the substrate;
Measuring a spectral sequence of light from the substrate while the substrate is being polished;
For each spectrum in the sequence of spectra, searching for the selected spectral feature within a fixed wavelength range of each spectrum, and characteristics of the selected spectral feature to generate a sequence of values Obtaining a value of,
Determining at least one of a polishing endpoint and an adjustment for polishing rate based on the sequence of values.   The method of claim 9, wherein the in situ monitoring system measures the intensity of a wavelength including at least visible light, and the fixed wavelength range has a width of 50 to 200 nanometers. A method for controlling polishing, comprising:
Polishing a substrate having a first layer;
Receiving an identifier of the selected spectral feature and a characteristic of the selected spectral feature to be monitored during polishing;
Measuring a spectral sequence of light from the substrate while the substrate is being polished;
Determining a first value for the characteristic of the feature when the first layer is exposed;
Adding an offset to the first value to generate a second value;
Monitoring the characteristic of the feature and stopping polishing when it is determined that the characteristic of the feature has reached the second value.   The substrate includes a second layer overlying the first layer, and the step of polishing includes polishing the second layer, and the method further includes using the in-situ monitoring system to The method of claim 11, comprising detecting exposure of a layer.   The method of claim 12, wherein the first value is determined when the first in situ monitoring technique detects exposure of the first layer.   The method of claim 12, wherein detecting the exposure of the first layer is a separate process from monitoring the characteristic of the feature.   The method of claim 14, wherein detecting the exposure of the first layer comprises monitoring total reflected intensity from the substrate.   The method of claim 14, wherein monitoring total reflection intensity comprises integrating the spectrum over a wavelength range for each spectrum in a sequence of spectra to generate the total reflection intensity.   The method of claim 14, wherein the in situ monitoring system comprises a motor torque or friction monitoring system.   The method of claim 11, wherein the first value is determined during polishing of the first layer.   The method of claim 11, wherein monitoring the characteristic of the feature comprises determining a value of the characteristic to generate a sequence of values for each spectrum from the sequence of spectra.   It is determined that the characteristic of the feature has reached the second value by fitting a linear function to the sequence of values and determining an end point at which the linear function is equal to the second value. The method of claim 19.   The method of claim 11, further comprising receiving a pre-polishing thickness of the first layer and calculating the offset value from the pre-polishing thickness. The step of calculating the offset value ΔV includes the step of calculating (D ₂ −d _T ) / (dD / dV), where d _T is the target thickness and D ₁ is from the setup substrate Is the thickness of the first layer before polishing, D ₂ is the thickness of the first layer after polishing from the setup substrate, and dD / dV is the thickness as a function of the characteristic. The method of claim 21, wherein the rate of change. The step of calculating the offset value ΔV includes the following equation: ΔV = ΔV _D + (d ₁ −D ₁ ) / (dD / dV) + (D ₂ −d _T ) / (dD / dV)
With
Where d ₁ is the thickness before polishing, d _T is the target thickness, D ₁ is the thickness of the first layer from the setup substrate before polishing, and D ₂ is The thickness of the first layer from the setup substrate after polishing, ΔV _D is the characteristic of the feature between the thickness of the first layer of the setup substrate before polishing and the thickness after polishing. The method of claim 21, wherein the difference is in value and dD / dV is the rate of change of thickness as a function of the characteristic. Further comprising the step of measuring the thickness d ₁ before polishing in a separate measuring station, The method of claim 23.   24. The method of claim 23, wherein dD / dV is the rate of change of thickness near the polishing endpoint.   The method of claim 11, wherein the first layer comprises polysilicon and / or a dielectric material.

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