JP2016034039A - Ceramic circuit board assembly and ceramic circuit board manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a ceramic circuit board assembly.SOLUTION: A ceramic circuit board assembly comprises: a ceramic circuit board including a metal circuit board bonded to one principal surface of a ceramic mother board via bonding layer and a metal heat sink bonded to the other principal surface via a bonding layer; a dummy part including a dummy metal plate which is made of the same material and has the same thickness with the metal circuit board bonded to an outer peripheral part of the one principal surface via the bonding layer, and a dummy metal plate which is made of the same material and has the same thickness with the metal heat sink bonded to an outer peripheral part of the other principal surface via the bonding layer; and division grooves for dividing the ceramic circuit board and the dummy part, respectively, in which the dummy part is used for measurement of thermal conductivity.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an inspection method for a ceramic circuit board in which a metal circuit board is bonded to one main surface of a ceramic substrate and a metal heat sink is bonded to the other main surface via a bonding layer.

  In general, in a semiconductor module, a circuit pattern is formed on one surface of a ceramic substrate with a metal having a relatively high electrical conductivity, such as a copper alloy or an aluminum alloy, and a heat sink is formed on the other surface with the same metal. The The circuit pattern and heat dissipation plate (hereinafter, both may be referred to as a metal plate) and the ceramic substrate may be joined by various methods such as active metal brazing, DBC (Direct Bonding Copper), and DBA (Direct Bonding Aluminum). It is done in a simple way.

  An electroless plating layer containing nickel (Ni) -phosphorus (P) or the like is formed on the surface of the circuit pattern or the heat sink from the viewpoint of improving solder wettability and preventing corrosion. As a result, a ceramic circuit board using the ceramic substrate is obtained, and a semiconductor chip or the like is mounted on the surface of the electroless plating layer formed on the surface of the circuit pattern to form a power semiconductor module.

  In recent years, for example, power semiconductor modules (IGBT modules and the like) capable of high voltage and large current operation are widely used as inverters for electric vehicles. In such a semiconductor module, since the semiconductor chip becomes high temperature during operation, it is necessary to increase the heat dissipation efficiency of the ceramic circuit board. Therefore, as a circuit board on which the semiconductor chip is mounted, a ceramic circuit board having high mechanical strength and high insulation reliability as well as high heat dissipation is required, and high thermal conductivity made of aluminum nitride or silicon nitride is required. Application of high-strength ceramics has been studied.

  As a circuit board using such high thermal conductivity and high strength ceramics, a surface copper circuit of a silicon nitride based sintered body substrate having a thermal conductivity of 90 W / mK or more and a three-point bending strength at room temperature of 600 MPa or more. A ceramic circuit board is disclosed in which a plate is provided and a copper plate is joined to the back surface by a brazing material (see, for example, Patent Document 1).

  In general, a ceramic material is selected so that a ceramic circuit board as a product has a desired heat dissipation property, and the heat dissipation property of the ceramic material has been mainly examined by a laser flash method. In the circuit board using the high thermal conductivity silicon nitride sintered body described in Patent Document 1, a test piece having a diameter of 10 mm and a thickness of 3 mm is collected from the obtained silicon nitride sintered body, and silicon nitride is obtained. It is disclosed that the thermal conductivity of the sintered body itself is measured by a laser flash method. It is disclosed that the measurement of the thermal conductivity is performed by adopting a forming method different from the doctor blade forming method when manufacturing a ceramic substrate.

JP 2002-293642 A

  Due to the high density of power semiconductor modules, there is a high demand for improvement in heat dissipation for countermeasures against heat generated from the power semiconductor modules, and improvement in heat dissipation is also demanded for ceramic circuit boards used therefor. For this reason, it is necessary to accurately and efficiently evaluate the heat dissipation of the ceramic circuit board.

  In ceramic circuit boards used in power semiconductor modules, the thermal conductivity of the bonding layer between the ceramic substrate and the metal circuit board or metal heat sink, in addition to the thermal conductivity of the ceramic board itself, is a factor that determines the heat dissipation. Many factors, such as layer thickness, thermal conductivity of the reaction layer formed at the interface between the bonding layer and the ceramic substrate, the thickness of the reaction layer, the thermal conductivity of the plating layer formed on the metal plate surface, and the thickness of the plating layer Therefore, it was difficult to determine the heat dissipation characteristics of the ceramic circuit board only by measuring the thermal conductivity of the ceramic itself constituting the ceramic board as in the prior art.

  That is, a metal circuit board is bonded to one surface of a ceramic substrate, and a metal heat sink is bonded to the other surface by a method such as active metal brazing, DBC, DBA, etc., and the surfaces of the metal circuit board and the metal heat sink are plated. After applying the layer, when the power semiconductor element is joined to the plating layer on the surface of the metal circuit board with solder and mounted on the power semiconductor module, the power semiconductor element does not dissipate well. In some cases, the solder joining the metal circuit board is melted, or a defect such as a disconnection in bonding for electrically connecting the electrode terminal of the power semiconductor element and the metal circuit board occurs. This is because heat dissipation is hindered mainly due to the bonding layer between the ceramic substrate and the metal circuit board or the metal heat sink, and the influence of the microvoids in the bonding layer is particularly great. In particular, when the ceramic substrate and the metal plate are joined, if the joining conditions change slightly (for example, due to the operating state of the joining furnace), there is a problem in that the rate of occurrence of defects becomes very high. It was.

  The present invention has been made in view of the above circumstances, and inspects a ceramic circuit board capable of preventing problems such as melting of solder and disconnection of bonding that occur when a power semiconductor element is joined to a ceramic circuit board. It is to provide a method.

  The inspection method for a ceramic circuit board of the present invention has a plurality of ceramic circuit boards for joining a metal circuit board to one main surface of the ceramic substrate and a metal heat sink to the other main surface via a joining layer, A dummy part that joins a dummy metal plate of the same material and the same thickness as the metal circuit board and the metal heat radiating plate to the outer peripheral part of both main surfaces through a bonding layer so as to face the ceramic substrate. After dividing the ceramic substrate and the dummy part of the ceramic circuit board assembly provided with a dividing groove for dividing the ceramic circuit board and the dummy part using the dividing groove, at least Thermal conductivity is measured by irradiating the surface of the dummy metal plate on one main surface of one dummy with a laser pulse and measuring the temperature on the surface of the dummy metal plate on the other main surface. Measurements to and performs inspection of the ceramic circuit board.

  In the method for inspecting a ceramic circuit board according to the present invention, before dividing the dummy portion, the ceramic circuit board assembly is immersed in a plating solution, and is applied to the surfaces of the metal circuit board, the metal heat sink, and the dummy metal board. It is preferable to apply nickel plating.

  In the inspection method for a ceramic circuit board according to the present invention, the bonding area of the ceramic substrate and the dummy metal plate on both main surfaces of the dummy part is the same, and 60% of the area of the main surface of the ceramic substrate in the dummy part. The above is preferable.

  In the inspection method for a ceramic circuit board according to the present invention, a relationship between a void ratio and a thermal conductivity in a bonding layer between the ceramic substrate and the dummy metal plate in the dummy portion is measured in advance, and the thermal conductivity is determined based on the void ratio. After setting the standard value of the rate, it is preferable to determine the heat dissipation of the ceramic circuit board based on the standard value of the thermal conductivity.

  The method for inspecting a ceramic circuit board of the present invention solves the above-mentioned problems of the prior art and can prevent problems that occur when the ceramic circuit board is used while being joined with a power element.

It is a top view which shows the ceramic circuit board aggregate | assembly used for the inspection method of the ceramic circuit board which concerns on one Embodiment of this invention. It is a bottom view which shows the ceramic circuit board aggregate | assembly used for the inspection method of the ceramic circuit board which concerns on one Embodiment of this invention. It is an A arrow view of the ceramic circuit board aggregate | assembly of FIG. In the inspection method of the ceramic circuit board concerning one Embodiment of this invention, it is drawing of the example of a temperature history curve obtained in the case of a measurement of thermal conductivity. In the inspection method of the ceramic circuit board concerning one embodiment of the present invention, it is a figure showing the relation between the void rate in the joining layer of the ceramic substrate and metal plate in the dummy part, and the thermal conductivity of the dummy part.

  Hereinafter, embodiments of the present invention will be specifically described, but the present invention is not limited to the following embodiments, and is based on ordinary knowledge of a person skilled in the art without departing from the spirit of the present invention. It should be understood that modifications and improvements as appropriate to the following embodiments also fall within the scope of the present invention.

  FIG. 1 is a front view of a ceramic circuit board assembly 1 to be used, FIG. 2 is a bottom view of the ceramic circuit board assembly 1, and FIG. 3 and FIG. 4, which is an example of a temperature history curve obtained when measuring the thermal conductivity of the dummy part 31, will be described. A ceramic circuit board assembly 1 shown in FIG. 1 includes one ceramic mother board 10, metal circuit boards 121 and 122 bonded to one main surface 101 of the ceramic mother board 10, and dummy metal boards 141, 142, and 143. 144, 145, the metal heat sink 13 joined to the other main surface 102, and the dummy metal plates 151, 152, 153, 154, 155, and the ceramic circuit board 2 and the dummy portions 31, 32, 33, 34, 35. The dividing groove 5 for dividing the ceramic circuit board 2 and the dummy parts 31 to 35 is formed. The dummy metal plates 141, 142, 143, 144, and 145 are made of the same material as the metal circuit plates 121 and 122, have the same thickness, and the dummy metal plates 151, 152, 153, 154, and 155 are metal heat dissipation plates. 13 and the same thickness, the dummy metal plates 141 to 145 are bonded to the ceramic substrate 1 via the bonding layers 141a to 145a, and the dummy metal plates 151 to 155 are bonded to the ceramic substrate 1. The dummy metal plates 141 to 145 are bonded to each other through the layers 151a to 155a. These metal circuit boards 121 and 122, the metal dummy boards 141-145, the metal heat sink 13, and the metal dummy boards 151-155 are formed by a well-known method. That is, a metal plate (not shown) of the same area is bonded to both main surfaces of the ceramic mother substrate 10 by a method such as active metal brazing, DBC, DBA, etc., and then the surface of the metal plate is masked. By removing unnecessary portions by etching, metal circuit boards 121 and 122, metal dummy plates 141 to 145, metal heat dissipation plate 13, and metal dummy plates 151 to 155 are formed on the ceramic mother substrate 10, as shown in FIG. A ceramic circuit board assembly 1 as shown in FIG.

By dividing the ceramic circuit board assembly 1 using the dividing groove 5, the ceramic circuit board 2 and the dummy parts 31 to 35 can be obtained, and at least one dummy of the dummy parts 31 to 35 is obtained. The surface of the dummy metal plate bonded to one main surface of the part is irradiated with a laser pulse, and the temperature of the surface of the dummy metal plate bonded to the other main surface is measured. The temperature history curve shown in FIG. 4 is obtained from the relationship between the surface temperature change of the dummy metal plate bonded to the other surface and the elapsed time from the start of laser pulse irradiation, and the thermal conductivity is calculated by the following formula.
λ = α ・ Cp ・ ρ (1)
Cp = Q / (M · θm) (2)
α = 0.1388 d / t1 / 2 (3)
λ: thermal conductivity (W / mK)
Cp: Specific heat (J / (kg · K))
α: Thermal diffusivity (m ² / s)
ρ: Density (kg / m ³ )
Q: Heat input (laser pulse energy) (J)
θm: Temperature rise (K)
M: Mass (kg)
t1 / 2: Time required for the temperature to rise by 1/2 of the temperature rise (s)
d: Dummy part thickness (m)

  After dividing the dummy parts 31 to 35 formed through the same manufacturing process as the ceramic circuit board 2 constituting the ceramic circuit board assembly 1 by the method described above, at least one of the dummy parts 31 to 35 is formed. One dummy metal of the dummy part 31 is obtained by irradiating the surface of the metal plate joined to one main surface of one dummy part 31 with a laser pulse and measuring the temperature of the dummy metal plate surface of the other main surface. Since the thermal conductivity in the thickness direction of the dummy portion from the surface of the plate 141 to the surface of the other dummy metal plate 151 is measured, the ceramic circuit board formed through the same manufacturing process as the dummy portion 31 The thermal conductivity equivalent to the thermal conductivity in the thickness direction of the ceramic circuit board 2 is obtained from the surface of the second metal circuit board 121, 122 to the surface of the metal heat radiating plate 13. For this reason, compared with the case where the thermal conductivity of only the ceramic material constituting the ceramic mother board 10 is measured and inspected as in the prior art, the metal circuit boards 121 and 122 of the ceramic circuit board 2 and the metal heat sink Therefore, it is possible to eliminate the ceramic circuit board 2 that deviates from the standard value of the desired thermal conductivity, so that the ceramic circuit can be eliminated. The desired heat dissipation of the substrate can be ensured, and when the power semiconductor element is used by being joined to the surface of the metal circuit boards 121 and 122 of the ceramic circuit board 2 with solder, the solder melts or a defect such as bonding disconnection occurs. Occurrence can be efficiently prevented.

  In addition, the dummy part 31 which measures thermal conductivity can divide | dummy a dummy part easily along a dividing line, without giving special processing as it is substantially square shape of 10 mm x 10 mm or less, and is commercially available. The surface of the dummy metal plate 151 on the other main surface is irradiated by irradiating the surface of the dummy metal plate 141 on one main surface of the dummy portion 31 with a laser pulse using the laser flash method thermal conductivity measuring apparatus of FIG. It is preferable because the thermal conductivity of the dummy portion 21 can be measured by measuring the temperature. Moreover, although the example which produces one dummy part from the ceramic circuit board assembly 1 and measures thermal conductivity was shown, predetermined | prescribed from the several ceramic circuit board assembly 1 manufactured continuously on the same conditions is predetermined. It does not matter if it is extracted at a frequency and measured. It is more preferable that the dummy part 31 for measuring the thermal conductivity has a substantially square shape of 4 to 6 mm × 4 to 6 mm.

  Further, since the dummy portions 31 to 35 are disposed in the outer peripheral portion of the ceramic circuit board assembly 1, the dummy portions 31 to 35 are generated when the ceramic circuit board 10 is joined to the metal circuit boards 121 and 122 and the metal heat radiating plate 13. In addition, there is an effect that the warp can be controlled, and the shape can be appropriately adjusted so that the warp is reduced.

  Hereinafter, the ceramic circuit board assembly 1, the ceramic circuit board 2, and the dummy parts 31 to 35 used in the ceramic circuit board inspection method of the present invention will be described in more detail. From the viewpoint of dissipating heat from the power semiconductor, the ceramic mother substrate 10 is preferably silicon nitride or aluminum nitride that can obtain a thermal conductivity of 70 W / mK or more. The known doctor blade method, extrusion molding method, and press molding method. From the viewpoint of obtaining a thickness of the ceramic mother substrate 10 of 0.2 to 1.0 mm, the doctor blade method is preferable, and the compact is sintered at a temperature of 1600 ° C. or higher in a nitrogen atmosphere. Can be obtained. Silicon nitride is particularly preferable from the viewpoint of achieving both thermal conductivity and strength.

  A dividing line 5 is formed on the obtained ceramic mother substrate 10 by a known laser scribing method. The dividing line 5 is for dividing according to the shape of the ceramic circuit board 2 and the dummy parts 31 to 35. Next, the surface of the ceramic mother substrate 10 is subjected to blasting or barrel polishing to adjust the surface roughness Rmax of the substrate.

  Next, a metal plate (not shown) such as copper, copper alloy, or aluminum having substantially the same area as the ceramic substrate is formed on both main surfaces of the ceramic base substrate 10 after the surface treatment using the active metal brazing method, DBC, It joins by methods, such as DBA. Among these, an active metal brazing method using a brazing material containing an active metal such as silver (Ag) -copper (Cu) -titanium (Ti) is preferable from the viewpoint of securing bonding strength. First, the paste of the brazing material is printed on a predetermined portion of the ceramic mother substrate 10. Although the printing thickness depends on the particle size of the brazing filler metal powder to be used, the coating thickness is about 10 to 50 μm. Next, a metal plate having a thickness of 0.2 mm or more is placed on the surface of the brazing material, and the ceramic mother substrate 10 and the metal plate are separated from the brazing material by, for example, joining while pressing at 600 to 900 ° C. It joins via the joining layer which becomes.

  Next, in order to remove unnecessary regions of the metal plate and the bonding layer of the ceramic substrate to which the metal plate is bonded, after forming a photoresist pattern, the metal plate and bonding at a desired location using a wet etching technique. The layer is removed to produce the ceramic circuit board assembly 1 in which the desired metal circuit boards 121 and 122, the metal heat sink 13 and the dummy metal boards 31 to 35 are bonded via the bonding layer. Accordingly, since the metal circuit plates 121 and 122 and the dummy metal plates 141 to 145 and the metal heat dissipation plate 13 and the dummy metal plates 151 to 155 are formed from the same metal plate under the same conditions, the metal circuit plate 121, 122 and the dummy metal plates 141 to 145 have substantially the same material and thickness, and the metal heat dissipation plate 13 and the dummy metal plates 151 to 155 have substantially the same material and thickness. Have the same structure.

  In the inspection method for the ceramic circuit board 2 according to the present invention, before the dummy parts 31 to 35 are divided, the ceramic circuit board assembly 1 is immersed in a plating solution, and the metal circuit boards 121 and 122, the metal heat sink 13 and the dummy. The reason why nickel plating is preferably performed on the surface of the metal plate is as follows. Nickel plating is performed from the viewpoint of improving the solder wettability of the surfaces of the metal circuit board 121.122 and the metal heat radiating plate 13 and preventing corrosion. In the nickel plating forming process, a plating layer that inhibits heat conduction is formed. Even when such a problem occurs, it is possible to exclude the ceramic circuit board 2 that deviates from the standard value of the desired thermal conductivity, so that the desired heat dissipation of the ceramic circuit board can be secured, and the power This is because, when the semiconductor element is used by being joined to the surface of the metal circuit boards 121 and 122 of the ceramic circuit board 2 with solder, it is possible to prevent the solder from melting or the occurrence of defects such as bonding disconnection. .

  In the method for inspecting a ceramic circuit board of the present invention, the bonding area of the ceramic mother board 10 and the dummy metal plates 141 and 151 in the dummy part 31 is substantially the same, and the area of the main surface of the ceramic mother board 101 in the dummy part The reason why it is preferable to be 60% or more is as follows. When the bonding areas of the ceramic mother substrate 101 and the dummy metal plates 141 and 151 on the two main surfaces of the dummy portion 31 are different, the amount of heat of the laser pulse is changed from the surface of one dummy metal plate 141 to the other dummy metal plate 151. This is because the measurement accuracy of the thermal conductivity is deteriorated because it is not uniformly transmitted to the surface of the film. When the bonding area between the ceramic mother substrate 101 and the dummy metal plates 141 and 145 on both main surfaces of the dummy portion 31 is less than 60% of the area of the main surface of the ceramic mother substrate 101 in the dummy portion, the laser pulse is emitted. This is because the area to be added is insufficient and the measurement accuracy of the thermal conductivity is deteriorated.

  In addition, it is preferable that the area to which the laser pulse is applied is smaller than the area of the surface of the dummy metal plate 141 of the dummy portion 31 because the measurement accuracy of the thermal conductivity is improved.

  In the ceramic circuit board inspection method of the present invention, the relationship between the void ratio in the bonding layer between the ceramic mother board 101 and the dummy metal plates 141 and 151 in the dummy portion 31 and the thermal conductivity of the dummy portion 31 is measured in advance. And after setting the standard value of thermal conductivity based on the said void rate, it is preferable to determine the heat dissipation of the ceramic circuit board 2 based on the standard value of this thermal conductivity for the following reasons. The heat dissipation of the ceramic circuit board 2 is influenced by the voids in the bonding layer between the ceramic mother board 10 and the metal circuit boards 121 and 122 and the metal heat sink 13 as well as the thermal conductivity of the ceramics constituting the ceramic mother board 10. Receive. FIG. 5 shows the void ratio in the bonding layer between the ceramic base substrate 101 of the dummy part and the metal plates 141 and 151, the surface of the dummy metal plate 141 on one main surface of the dummy part 31 being irradiated with a laser pulse, The relationship with the thermal conductivity calculated | required by measuring the temperature of the surface of the dummy metal plate 151 of the main surface is shown. The void ratio in the bonding layer was measured by measuring the thermal conductivity, and then polishing the plane perpendicular to the thickness of the dummy portion to cause the bonding layer to appear, observing with SEM, and image analysis And calculated by averaging the void ratios of the two bonding layers on both main surfaces of the ceramic mother substrate 101. As the void ratio increases, the thermal conductivity of the ceramic circuit board is hindered, so the thermal conductivity tends to decrease.

  In accordance with the power semiconductor placed on the ceramic circuit board 2, for example, a standard value 182 W / m · K of the thermal conductivity that gives a void ratio of less than 10% is determined, and based on this standard value, the thermal conductivity of the dummy part 31 The ceramic circuit board 2 obtained from the same ceramic circuit board assembly 1 as that of the dummy portion 31 is determined to pass or fail based on the measurement result of the rate, and when the thermal conductivity less than the standard value is obtained, the ceramic circuit board 2 When the power semiconductor is joined to the surfaces of the metal circuit boards 121 and 122 and mounted on the semiconductor power module, the solder that joins the power semiconductor element and the metal circuit board is used. It is possible to reliably suppress the occurrence of problems such as melting of the metal and disconnection of bonding.

  In the above, an example is shown in which one dummy part is produced from the ceramic circuit board assembly 1 and the thermal conductivity is measured to determine the ceramic circuit board 2 of the same ceramic circuit board assembly 1. The measurement may be performed by extracting from a plurality of continuously produced ceramic circuit board assemblies 1 at a predetermined frequency.

  Thus, in the present invention, after measuring the thermal conductivity of the dummy part 31 in advance, the dummy part 31 is polished and the void ratio is measured, and the relationship between the void ratio and the thermal conductivity shown in FIG. 5 is obtained. The void ratio of the ceramic circuit board 2 manufactured under the same conditions does not need to be measured by polishing the ceramic circuit board 2, and the laser flash method is used to evaluate the heat dissipation of the ceramic circuit board by greatly reducing labor. Since it can be simplified, defective products can be appropriately excluded.

Example 1
Examples of the present invention will be described below. However, the present invention is not limited to these examples.

100 ceramic circuit board assemblies 1 of 130 × 85 × 0.4 mm capable of taking nine 40 × 23 mm ceramic circuit boards 2 were produced.
[Creation of Ceramic Mother Board 10]
To the silicon nitride raw material powder, 3% by weight of magnesium oxide powder and 3% by weight of yttrium oxide powder were added as sintering aids, and wet mixed in an organic solvent by a ball mill using silicon nitride balls as a grinding medium. An organic binder, a plasticizer, and the like were mixed into this mixture and uniformly mixed with a ball mill to obtain a raw material slurry. The raw material slurry was defoamed and thickened, and then formed into a predetermined plate thickness by a doctor blade method to obtain a molded body. The sheet molded body was cut into a predetermined shape, degreased, and further sintered at a temperature of 1800 ° C. in a nitrogen pressure atmosphere.

[Formation of dividing lines]
As shown in FIG. 1, the dividing line 5 is formed by a laser so that the ceramic mother board 10 can be divided into nine (3 × 3) ceramic circuit boards 2 and fifteen dummy parts 31 to 35 around them. .

[Blasting]
In order to make the surface of the ceramic mother substrate 10 moderately rough (Ra 0.4 to 0.8 μm) and improve the bondability with the metal plate, a dry blasting process was performed in which an abrasive was sprayed uniformly over the entire front and back surfaces.

[Join]
A copper plate was joined to both surfaces of 100 blasted ceramic mother substrates 10 by an active metal brazing method. First, an Ag—Cu—Ti brazing paste was applied to a predetermined portion of both main surfaces of the silicon nitride ceramic substrate by a printing method. A copper plate having the same rectangular shape as the ceramic base substrate 10 and a thickness of 0.6 mm was placed on the surface of the brazing material. This was made into 1 set, and 25 sets were piled up through the carbon thin plate, and it was set as 1 pile. A total of 4 ridges were arranged in 2 rows and 2 columns and charged into a joining furnace, and joined while heating and pressing to form a joining layer between the ceramic mother board and the copper plate.

[etching]
Photoresist was applied to the entire surface of the bonded metal plates, and a photoresist pattern was formed using photolithography technology. Next, after removing unnecessary portions of the metal plate with a ferric chloride solution using a wet etching technique, the photoresist is removed, and the metal circuit plates 121 and 122 having a predetermined shape and the metal heat radiating plate 13 are removed. The ceramic circuit board assembly 1 to which the dummy metal plates 31 to 35 were bonded was obtained. Next, the bonding layer (brazing material) protruding from the metal circuit plates 121 and 122, the metal heat sink 13, and the dummy metal plates 31 to 35 was removed.

[activation]
The ceramic circuit board assembly 1 to which the metal circuit boards 121 and 122, the metal heat sink 13, and the dummy metal boards 31 to 35 are joined is immersed in a palladium sulfate solution, and the metal circuit boards 121 and 122, the metal heat sink 13 and the dummy metal board are immersed. Palladium was deposited on the surfaces 31-35. Next, palladium deposited on the surface of the ceramic mother substrate 10 was removed by dipping in sulfuric acid.

[Plating]
Next, nickel-phosphorous plating films were formed on the surfaces of the metal circuit plates 121 and 122 to which palladium was applied, the metal heat dissipation plate 13, and the dummy metal plates 31 to 35 to obtain 100 ceramic circuit board assemblies 1.

[Split]
Nine ceramic circuit boards 2 and 15 dummy parts 31 to 35 were obtained from one ceramic circuit board aggregate 1 by dividing along the dividing line formed on the ceramic circuit board aggregate 1. The size of the ceramic substrate in the dummy part 31 is constant 5 mm × 5 mm, and the thickness is 0.4 mm. The pair of dummy metal plates 141 and 151 bonded to the front and back of the ceramic substrate have the same shape and the same area and are opposed to each other with the ceramic substrate interposed therebetween, and the area is 4.47 × 4 which is 80% of the ceramic substrate. .47 mm ² .

  From the obtained 100 ceramic circuit board aggregates, the thermal conductivity of each one dummy part was measured. For measuring the thermal conductivity of the dummy part 31, a laser flash method thermophysical property measuring measure LFA-502 manufactured by Kyoto Electronics was used. Measured by measuring. A Ni plate was used as a reference at the time of measurement, and laser light was applied to the surface of the dummy metal plate 141 through a 4 mm square light shielding plate opening. The thermal conductivity of the dummy part 31 was calculated using the temperature history curve on the surface of the dummy metal plate 151 as shown in FIG. 4 and the equations (1), (2), and (3).

  The value of the thermal conductivity of the 100 dummy parts 31 obtained was 185 to 198 W / m · K. On the other hand, a power element with an output of 200 watts is bonded to the surface of the metal circuit board 121 of 900 ceramic circuit boards 2 obtained from 100 ceramic circuit board assemblies 1 by a solder layer having a thickness of 0.15 mm, and wire bonding is performed. Then, a heat dissipation base having a thickness of 55 mm × 86 mm × 3 mm was joined to the heat dissipation plate with a solder layer having a thickness of 0.15 mm. Electric power was supplied to this power element for 5 seconds, and then the temperature increase / decrease cycle in which the electric power was stopped for 30 seconds was defined as 1 cycle, and this was repeatedly applied. Even after 1000 cycles, there were no problems such as melting of the solder layer and disconnection of the bonding wire, and it was confirmed that the ceramic circuit board had the heat dissipation as designed.

(Comparative Example 1)
Compared to Example 1, the thermal conductivity measurement of silicon nitride ceramics constituting the ceramic mother substrate 10 was performed by CIP molding of a mixture obtained by wet mixing, and a sintered specimen of φ10 mm × 3 mm was obtained. The ceramic circuit board assembly 1 was manufactured in the same manner as in Example 1 except that 10 pieces were manufactured and measured by the thermal conductivity test method by the laser flash method specified in JIS R1611 without joining the metal plates. 100 pieces were produced, and 900 ceramic circuit boards 2 were produced. The measured value of the thermal conductivity of the sintered body test piece of φ10 mm × 3 mm was 72 to 81 W / m · K, and it was confirmed that a desired value was obtained.

  After the power elements were bonded to the 900 ceramic circuit boards 2 in the same manner as in Example 1, a temperature increase / decrease cycle test was performed. As a result, melting of the solder layer occurred in 45 ceramic circuit boards 2. In some ceramic circuit board assemblies 1, the bonding conditions when bonding the ceramic substrate and the metal plate are slightly different from those in Example 1, microvoids are generated in the bonding layer, and the porosity is 10% or more. It was.

(Comparative Example 2)
The thermal conductivity of the sintered body test piece was measured in the same manner as in Comparative Example 1 except that the size of the sintered body test piece was φ10 mm × 0.4 mm. The measured value was 74 to 84 W / m · K, and it was confirmed that a desired value was obtained. In the same manner as in Example 1, 100 ceramic circuit board assemblies 1 and 900 ceramic circuit boards 2 were produced.

  After the power elements were bonded to the 900 ceramic circuit boards 2 in the same manner as in Example 1, a temperature increase / decrease cycle test was performed. As a result, melting of the solder layer occurred in 41 ceramic circuit boards 2. In some ceramic circuit board assemblies 1, the bonding conditions when bonding the ceramic substrate and the metal plate are slightly different from those in Example 1, microvoids are generated in the bonding layer, and the porosity is 10% or more. It was.

(Example 2)
Compared to the first embodiment, the thickness of the metal circuit boards 121 and 122 and the dummy metal plate 141 is 0.4 mm, and the thickness of the metal heat sink 13 and the dummy heat sink is 0.6 mm. Similarly, 100 ceramic circuit board assemblies 1 were produced, and 900 ceramic circuit boards and dummy parts 31 to 35 were obtained.

  On the other hand, 18 ceramic circuit board assemblies were produced in the same manner except that the respective joining conditions were changed for the ceramic circuit board assembly 1 obtained in Example 2. Laser flashing is performed by measuring the void ratio in the bonding layer of each one dummy part from this ceramic circuit board assembly 1 and the surface of one dummy copper plate, and measuring the temperature of the other dummy copper plate surface. The relationship of the thermal conductivity measured by the method is shown in FIG. The void ratio in the bonding layer is obtained by measuring the thermal conductivity, then polishing the plane perpendicular to the plate thickness of this dummy part, causing the bonding layer to appear, observing with SEM, and image analysis. It is calculated by averaging the void ratios of the two bonding layers on both main surfaces of the ceramic plate. If the void ratio is 10% or less, the required temperature increase / decrease cycle performance can be obtained in the design of the power element module. Therefore, the standard value of thermal conductivity is based on FIG. It was determined to be 182 W / m · K or more.

  Next, the thermal conductivity of each dummy part 31 divided from 100 ceramic circuit board assemblies 1 is measured in the same manner as in Example 1, and the dummy part having a thermal conductivity of less than 182 W / m · K. If there is, the ceramic circuit board assembly 1 in the ceramic circuit board assembly 1 having the dummy portion was removed, the power element was joined to the ceramic circuit board 2, and the temperature increase / decrease cycle test Carried out. As a result, problems such as melting of the solder layer and disconnection of the bonding wire did not occur, and it was confirmed that the ceramic circuit board had heat dissipation as designed.

(Example 3)
In the same manner as in Example 1, 100 ceramic circuit board assemblies 1 were produced, and 900 ceramic circuit boards and dummy parts 31 to 35 were obtained.

  Next, each ceramic circuit board assembly obtained from the first, fifth, ninth, thirteenth, seventeenth, twenty-first and twenty-fifth sets from the top in each pile where the ceramic mother board and the copper plate are overlapped when the ceramic mother board and the copper plate are joined. The thermal conductivity of each one dummy portion 31 divided from 1 was performed in the same manner as in Example 1.

  When there is a dummy part having a thermal conductivity of less than 182 W / m · K, the ceramic circuit board assembly having the dummy part and three ceramic circuit board assemblies before and after the dummy part, a total of seven ceramic circuit boards The 63 ceramic circuit boards obtained from the assembly were removed.

  Thereafter, after the power element was bonded to the ceramic circuit board 2, a temperature increase / decrease cycle test was performed. As a result, problems such as melting of the solder layer and disconnection of the bonding wire did not occur, and it was confirmed that the ceramic circuit board had heat dissipation as designed.

  The inspection method for a ceramic circuit board according to the present invention can surely prevent problems that occur when a power element is mounted. Therefore, it can be usefully used as a method for inspecting the heat dissipation of a ceramic circuit board having a structure in which a metal circuit board or a metal heat sink is bonded to the ceramic board.

DESCRIPTION OF SYMBOLS 1 ... Ceramic circuit board assembly 10 ... Ceramic mother board 2 ... Ceramic circuit boards 121, 122 ... Metal circuit board 13 ... Metal heat sink 101 ... Dummy ceramic board 141, 142, 143, 144, 145 ... dummy metal plates 151, 152, 153, 154, 155 ... dummy metal plates 31, 32, 33, 34, 35 ... dummy portion 5 ... dividing groove

Claims (7)

A ceramic circuit board comprising a metal circuit board bonded to one main surface of the ceramic mother board via a bonding layer and a metal heat sink bonded to the other main surface via a bonding layer;
Furthermore, a dummy metal plate of the same material and thickness as the metal circuit board joined to the outer peripheral part of the one main surface via a bonding layer, and a bonding layer to the outer peripheral part of the other main surface Having a dummy portion comprising a dummy metal plate of the same material and the same thickness as the joined metal heat sink;
A ceramic circuit board assembly, wherein a division groove for dividing the ceramic circuit board and the dummy part is provided, and the dummy part is used for thermal conductivity measurement.   2. The bonding surface of the ceramic substrate and the dummy metal plate is the same on both the main surfaces, and is 60% or more of the area of the main surface of the ceramic substrate in the dummy portion. Ceramic circuit board assembly.   3. The ceramic circuit board assembly according to claim 1, wherein in the dummy portion, the dummy metal plates on both main surfaces are arranged to face each other and are also used for warpage control. 4. Preparing a ceramic mother substrate;
Forming a dividing groove in the ceramic mother substrate;
Bonding a metal circuit board to one main surface of the ceramic mother board via a bonding layer;
Bonding a metal heat sink to the other main surface of the ceramic mother substrate through a bonding layer;
By removing unnecessary areas of the metal circuit board, the metal heat sink and the bonding layer, a ceramic circuit board including the metal circuit board and the metal heat sink is formed, and the outer peripheral portion of the one main surface is formed with the ceramic circuit board. A dummy metal plate having the same material and the same thickness as the metal circuit board is formed, and a dummy metal plate having the same material and the same thickness as the metal heat radiating plate is formed on the outer peripheral portion of the other main surface. A dummy part used for conductivity measurement;
Dividing the ceramic circuit board and the dummy portion using the dividing grooves;
A method for producing a ceramic circuit board, comprising: After the division, the thermal conductivity is measured by irradiating the surface of the dummy metal plate on one main surface of the at least one dummy part with a laser pulse, and measuring the temperature of the surface of the dummy metal plate on the other main surface. A step of determining the heat dissipation of the ceramic circuit board;
Removing the ceramic circuit board deviated from the standard value of the desired thermal conductivity by the determination;
The method for producing a ceramic circuit board according to claim 4, wherein:   The relationship between the void ratio and the thermal conductivity in the bonding layer between the ceramic substrate and the dummy metal plate in the dummy portion is measured in advance, and after setting the standard value of the thermal conductivity based on the void ratio, the thermal conductivity 6. The method of manufacturing a ceramic circuit board according to claim 4, wherein the heat dissipation of the ceramic circuit board is determined based on a standard value of the rate. The method for manufacturing a ceramic circuit board according to claim 4, wherein the dummy portion is formed to be 10 mm × 10 mm or less.