JP2016021448A - Wafer processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wafer processing method that can suppress the process.SOLUTION: A wafer processing method comprises: a grinding step for grinding the back surface of a wafer; a resist film coating step for coating resist film on areas other than an area corresponding to a parting scheduled line on the back surface of the wafer; a plasma etching step for forming a groove ST for parting the wafer along the parting scheduled line while leaving a function layer FL of the wafer; an expand sheet attaching step for attaching an expand sheet TE on the wafer; and a function layer breaking step for breaking the function layer FL along the groove ST of the wafer by expanding the expand sheet TE. In the plasma etching step, the groove ST is formed so that the width thereof is tapered from the back surface of the wafer to the front surface of the wafer. In the function layer breaking step, the function layer FL exposed at the narrow width of the tapered groove ST is broken by the narrow width of the groove ST.SELECTED DRAWING: Figure 11

Description

  The present invention relates to a wafer processing method such as plasma dicing.

  Usually, a dicing apparatus or a laser processing apparatus is used for dividing the semiconductor wafer. Since the dicing apparatus is pulverized, chipping (chipping) is likely to occur, and there is a problem that the bending strength of the divided chips is low and a processing time is relatively long. In addition, the laser processing apparatus has the advantage that there are few chips and there is almost no cutting allowance, but since the chips are adjacent to each other, there is also a problem that the chips rub against each other during the subsequent conveyance and the chips are generated. It was left.

  Therefore, a processing method (plasma dicing) in which the wafer is divided into individual chips using plasma etching has been devised (see, for example, Patent Document 1). This processing method has the advantage that even when the wafer diameter is increased, the processing time for forming the groove is hardly prolonged, and a chip having a high bending strength can be formed. A device to be processed by this processing method is often formed of a functional layer called a low-k film. When grooves are formed by plasma dicing from the back surface of the wafer thinned by grinding and divided into individual device chips, even if the silicon substrate can be processed by plasma etching, the metal present on the low-k film or the planned dividing line A TEG (Test Element Group) that includes Alternatively, processing cannot be performed under the same plasma conditions as the silicon substrate. Therefore, plasma etching is performed after removing the Low-k film and TEG on the planned division line shallowly by laser or dicing.

  Further, for dividing the semiconductor wafer, a dicing machine is used to form a cutting groove on a line to be divided on the surface of the semiconductor wafer, the back surface of the semiconductor wafer is ground and divided into chips, and then DAF (Die Attach Film) A method of sticking a so-called adhesive film for die bonding is used (for example, see Patent Document 2). In this method, the adhesive film attached to the back surface is divided into chips by separate laser processing.

JP 2006-114825 A Japanese Patent No. 4791843

  However, in the method disclosed in Patent Document 1, it is necessary to previously remove the Low-k film and TEG on the planned dividing line shallowly by laser or dicing. Occurrence and peeling of the functional layer may occur. In the method disclosed in Patent Document 2, it is necessary to separately divide the adhesive film by laser processing, so that the number of processes tends to increase.

  The objective of this invention is providing the processing method of the wafer which can suppress a process.

  In order to solve the above-described problems and achieve the object, the wafer processing method according to the present invention is such that a device is formed by a functional layer stacked on the surface of a substrate, and the device is partitioned by a plurality of division lines. A wafer processing method, in which a back surface of a wafer is exposed and held on a chuck table, and a grinding step for grinding the back surface of the wafer to reduce it to the finished thickness, and a back surface of the wafer subjected to the grinding step A resist film coating step for coating a resist film in a region excluding a region corresponding to the planned division line, and plasma etching is performed on the wafer on which the resist film coating step has been performed, and the wafer is divided leaving the functional layer. A plasma etching step for forming grooves along the division lines, and an annular frame on the back or front surface of the wafer. An expanded sheet adhering step for adhering the expanded sheet attached to the sheet, and a functional layer breaking step for breaking the functional layer along the groove of the wafer by expanding the expanded sheet, the plasma etching In the step, the groove is formed in a tapered shape from the back surface to the front surface of the wafer, and the functional layer exposed in the narrow width of the tapered groove is broken in the narrow width of the groove in the functional layer breaking step. It is characterized by that.

  In the wafer processing method, the expand sheet attaching step may attach an expand sheet having an outer periphery attached to an annular frame on the back surface of the wafer in which the groove is formed.

  In the wafer processing method, the metal element for characteristic evaluation is formed on the planned dividing line, and the metal element for characteristic evaluation can be broken in the functional layer breaking step.

  Therefore, in the wafer processing method of the present invention, the groove formed by plasma dicing is tapered in the depth direction, and the Low-k film and the TEG are expanded along the sufficiently narrow groove to break the plasma etching step. There is an effect that the process of removing the Low-k film and the TEG is unnecessary.

FIG. 1 is a diagram illustrating a wafer to be processed by the wafer processing method according to the first embodiment. FIG. 2 is a perspective view showing a protective member attaching step of the wafer processing method according to the first embodiment. FIG. 3 is a sectional view of a grinding step of the wafer processing method according to the first embodiment. FIG. 4 is a perspective view of the wafer after the grinding step of the wafer processing method according to the first embodiment. FIG. 5 is a perspective view showing the resist film coating step after the wafer processing method according to the first embodiment. FIG. 6 is a cross-sectional view of an example of a plasma etching apparatus used in the plasma etching step of the wafer processing method according to the first embodiment. FIG. 7 is a cross-sectional view of the wafer after the plasma etching step of the wafer processing method according to the first embodiment. FIG. 8 is a cross-sectional view showing the resist film removing step of the wafer processing method according to the first embodiment. FIG. 9 is a cross-sectional view showing an expand sheet attaching step of the wafer processing method according to the first embodiment. FIG. 10 is a cross-sectional view showing a functional layer breaking step of the wafer processing method according to the first embodiment. FIG. 11 is a cross-sectional view after the functional layer breaking step of the wafer processing method according to the first embodiment. FIG. 12 is a perspective view showing an outline of an expand sheet attaching step of the wafer processing method according to the second embodiment. FIG. 13 is a cross-sectional view of a grinding step of the wafer processing method according to the second embodiment. FIG. 14 is a perspective view showing a resist film coating step after the wafer processing method according to the second embodiment. FIG. 15 is a cross-sectional view of the wafer after the plasma etching step of the wafer processing method according to the second embodiment. FIG. 16 is a cross-sectional view showing a resist film removing step of the wafer processing method according to the second embodiment. FIG. 17 is a cross-sectional view showing a state where an adhesive film is attached to the back surface of the wafer shown in FIG. FIG. 18 is a cross-sectional view showing the functional layer breaking step of the wafer processing method according to the second embodiment. FIG. 19 is a cross-sectional view of the main part of the wafer W in the plasma etching step of the wafer processing method according to the modification of the first embodiment.

  DESCRIPTION OF EMBODIMENTS Embodiments (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. The constituent elements described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the structures described below can be combined as appropriate. Various omissions, substitutions, or changes in the configuration can be made without departing from the scope of the present invention.

Embodiment 1
A wafer processing method according to the first embodiment will be described with reference to FIGS. 1A is a perspective view showing a wafer to be processed by the wafer processing method according to the first embodiment, and FIG. 1B is a main portion of the wafer to be processed by the wafer processing method according to the first embodiment. FIG. 2 is a perspective view showing a protective member attaching step of the wafer processing method according to the first embodiment, and FIG. 3 is a sectional view of a grinding step of the wafer processing method according to the first embodiment. FIG. 5 is a perspective view of the wafer after the grinding step of the wafer processing method according to the first embodiment, FIG. 5 is a perspective view of the wafer processing method according to the first embodiment after the resist film coating step, and FIG. FIG. 7A is a cross-sectional view of an example of a plasma etching apparatus used in the plasma etching step of the wafer processing method according to the first embodiment. FIG. 7A is a plasma etching step of the wafer processing method according to the first embodiment. FIG. 7B is an enlarged cross-sectional view showing the main part of the wafer shown in FIG. 7A, and FIG. 8 is a resist film for the wafer processing method according to the first embodiment. FIG. 9 is a cross-sectional view showing a removing step, FIG. 9 is a cross-sectional view showing an expand sheet attaching step of the wafer processing method according to the first embodiment, and FIG. 10A is a functional layer of the wafer processing method according to the first embodiment. FIG. 10B is a sectional view showing a state in which the functional layer shown in FIG. 10A is broken, and FIG. 11 is a functional layer of the wafer processing method according to the first embodiment. It is sectional drawing after a fracture | rupture step.

  The wafer processing method according to the first embodiment (hereinafter simply referred to as a processing method) is a method for processing the wafer W shown in FIG. 1, and the wafer DT includes a chip DT including individual devices D (FIG. 10B). It is a method of dividing into The wafer W as a processing target divided into individual chips DT by the processing method according to the first embodiment is, for example, a disk-shaped semiconductor wafer or optical device wafer using silicon, sapphire, gallium, or the like as a base material. is there.

  As shown in FIGS. 1A and 1B, the wafer W is an organic material such as an inorganic film such as SiOF or BSG (SiOB) or a polymer film such as polyimide or parylene on the surface of the substrate. A device D constituting the chip DT is formed by a functional layer FL on which a low dielectric constant insulator film (Low-k film) made of a system film is laminated. The functional layer FL is made of a material having corrosion resistance against an etching gas or the like in the plasma etching step. The device D is partitioned by a plurality of division lines S formed on the surface WS of the wafer W. Further, on the surface WS of the wafer W, TEGα (corresponding to a test element group: a metal element for characteristic evaluation) is formed on the planned division line S. TEGα is an evaluation element for finding out design and manufacturing problems occurring in the device D. In FIG. 1B, the TEGα is provided at the center in the width direction of the planned division line S. However, the present invention is not limited to this, and TEGα of various shapes and arrangements are used. .

  The processing method according to Embodiment 1 includes a protective member attaching step, a grinding step, a resist film covering step, a plasma etching step, a resist film removing step, an expanded sheet attaching step, and a functional layer breaking step. Prepare.

  The protective member attaching step is a step of attaching a protective member G (hard substrate or protective tape) having a size substantially equal to that of the wafer W to the surface WS on which the device D of the wafer W is formed. In the first embodiment, the protection member G is made of a hard material and is formed in a disk shape having a size substantially equal to that of the wafer W. In the protective member attaching step, the protective member G is attached to the surface WS of the wafer W as shown in FIG. After the protective member attaching step, the process proceeds to the grinding step.

  The grinding step is a step of grinding the back surface WR of the wafer W and thinning the wafer W to a finished thickness T (shown in FIG. 7B). As shown in FIG. 3, the grinding step places the front surface WS of the wafer W on the chuck table 11 of the grinding apparatus 10 with the protective member G facing downward, and exposes the back surface WR of the wafer W to the chuck table 11. Hold by suction. Thereafter, a grinding wheel 12 (corresponding to a grinding means) that rotates about the axis of the grinding apparatus 10 is positioned on the chuck table 11 that rotates about the axis. Then, while supplying grinding water to the back surface WR of the wafer W through a nozzle (not shown) in the grinding wheel 12, the grinding wheel 12 is gradually lowered and fed to the back surface WR of the wafer W by grinding.

  The back surface WR of the wafer W is ground by the grinding wheel 12 and thinned to a finished thickness T. When the thickness of the wafer W reaches the finishing thickness T, the grinding wheel 12 is separated from the chuck table 11 and the suction holding of the wafer W on the chuck table 11 is released. In the first embodiment, the finished thickness T is, for example, 100 μm. Then, the process proceeds to the resist film coating step.

  The resist film coating step is a step of coating the resist film R in a region excluding a region corresponding to the division line S on the back surface WR of the wafer W on which the grinding step illustrated in FIG. 4 is performed. The resist film R is made of a material having corrosion resistance against an etching gas or the like in the plasma etching step. In the resist film coating step, for example, after forming a thin resist film R on the entire back surface WR of the wafer W, exposure and development are performed through a negative or positive mask corresponding to the division line S, and the division line is The resist film R is removed from the region corresponding to S (the region overlapping the division planned line S in the thickness direction). After the resist film coating step, on the back surface WR of the wafer W, as shown in FIG. 5, the region corresponding to the planned division line S is exposed, and the region excluding the region corresponding to the planned division line S (that is, the device D or the like). Is covered with a resist film R. Then, the process proceeds to the plasma etching step.

  The plasma etching step is a step of performing plasma etching on the wafer W on which the resist film coating step has been performed. In the plasma etching step, for example, the wafer W is accommodated in the housing 21 through the opening 22 of the housing 21 of the plasma etching apparatus 20 shown in FIG. Then, the surface WS of the wafer W is sucked and held by the suction holding member 25 of the lower electrode 24 connected to the high frequency power source 23 through the protective member G, and the opening 22 is closed by the gate 26. Next, the refrigerant is circulated from the refrigerant supply means 32 into the cooling passage 33 in the lower electrode 24, the gas discharge means 27 is operated to evacuate the atmosphere in the housing 21 through the exhaust port 28, and from the gas supply means 29. Etching gas is injected into the housing 21 through the jet port 31 of the upper electrode 30 toward the back surface WR of the wafer W. At this time, the inside of the housing 21 is maintained at a predetermined pressure. Then, high frequency power is applied from the high frequency power source 23 to the lower electrode 24 and the upper electrode 30 in a state where the etching gas is injected. As a result, a plasma discharge is generated between the lower electrode 24 and the upper electrode 30, and a region corresponding to the division line S on the back surface WR of the wafer W is etched, so that FIG. 7A and FIG. As shown in FIG. 5, the trench ST that divides the wafer W is formed along the planned division line S while leaving the functional layer FL.

The etching gas used in the plasma etching step is appropriately selected according to the material of the wafer W. For example, when the material of the wafer W is silicon, SF ₆ , NF ₃ , XeF ₂ or the like is used as an etching gas.

  In the first embodiment, the wafer W is made of silicon. In the plasma etching step, the pressure in the housing 21 is maintained at 25 Pa (gauge pressure), the power frequency of the high-frequency power source 23 is 13.56 MHz, and the refrigerant is supplied from the refrigerant supply means 32 into the cooling passage 33 as 2000 Pa (gauge pressure). Helium gas is circulated so that the temperature of the lower electrode 24 is 10 ° C.

In the plasma etching step, SF ₆ is supplied as an etching gas at a flow rate of 400 sccm (Standard cc / min), a high frequency power of 2500 W is applied to the upper electrode 30, and a high frequency power of 150 W is applied to the lower electrode 24. Then, a protective film deposition step of supplying C ₄ F ₈ as an etching gas at a flow rate of 400 sccm, applying high frequency power of 2500 W to the upper electrode 30 and applying high frequency power of 50 W to the lower electrode 24 is repeated alternately. That is, in the plasma etching step, the etching step and the protective film deposition (deposition) step are alternately repeated, and the region corresponding to the division line S on the back surface WR of the wafer W is etched by a so-called Bosch process.

  In the plasma etching step in which a so-called Bosch process is performed, the etching step and the protective film deposition step are repeated. In the plasma etching step, the region corresponding to the division line S is etched at a high speed during the etching step, and a fluorocarbon film as a protective film is deposited on the inner surface of the groove exposed by the etching during the protective film deposition step. The wafer W can be etched at a high speed with a high aspect ratio.

  In the first embodiment, the time for performing the etching step and the time for performing the protective film deposition step are gradually shortened as they are repeated. For example, in the first embodiment, the etching step is first performed for 5 seconds, the protective film deposition step is performed for 3 seconds, and the time for performing the etching step and the time for performing the protective film deposition step are gradually shortened when, for example, 50 times are repeated. . Therefore, in the first embodiment, in the plasma etching step, the groove ST has a tapered cross-section V from the back surface WR to the front surface WS of the wafer W as shown in FIGS. 7 (a) and 7 (b). It is formed in a letter shape. In the first embodiment, the finished thickness T of the wafer W is 100 μm, the width W1 on the front surface WS of the groove ST is 1 μm, and the width W2 on the back surface WR of the groove ST is 10 to 20 μm. Then, the etching gas in the housing 21 is exhausted and the process proceeds to a resist film removal step.

The resist film removing step is a step of removing the resist film R covering the back surface WR of the wafer W. In the resist film removing step, for example, O ₂ gas is injected into the housing 21 from the gas supply means 29 through the outlet 31 of the upper electrode 30 while the wafer W is sucked and held by the adsorption holding member 25 of the lower electrode 24. High frequency power is applied from the high frequency power source 23 to the lower electrode 24 and the upper electrode 30. O ₂ gas is turned into plasma, and the organic components of the resist film R are burned and ashed (ashed). Then, after taking out from the inside of the housing 21 of the plasma etching apparatus 20, the wafer W is immersed in a chemical solution, and the resist film R is removed as shown in FIG. And it progresses to an expand sheet sticking step.

  The expand sheet sticking step is a step of sticking the expand sheet TE with the outer periphery mounted on the annular frame F on the back surface WR of the wafer W in which the groove ST is formed. In the expand sheet attaching step, first, an adhesive film FA for die bonding is attached to the back surface WR of the wafer W. The die-bonding adhesive film FA refers to a special adhesive film used for mounting and laminating the chip DT. After sticking the adhesive film FA for die bonding, as shown in FIG. 9, the expandable sheet TE which has a stretching property is stuck on the adhesive film FA side. Note that an annular frame F is attached to the outer periphery of the expanded sheet TE. Then, the protective member G is peeled from the surface WS of the wafer W. And it progresses to a functional layer fracture | rupture step.

  The functional layer breaking step is a step of breaking the functional layer FL along the groove ST of the wafer W by expanding the expanded sheet TE. In the functional layer breaking step, as shown in FIG. 10A, the annular frame F is held by the frame holding means 41 of the expansion device 40 provided in the cooling chamber 50, and the pressing member 42 of the expansion device 40 is expanded. Position below the sheet TE. Then, cold air is supplied into the cooling chamber 50 from the cold air supply port 51 to cool the inside of the cooling chamber 50 to a predetermined temperature, and then, as shown in FIG. TE is raised for each wafer W, and the expanded sheet TE to which the wafer W is adhered is expanded in the radial direction, and an external force that expands in the radial direction is applied to the wafer W and the adhesive film FA. Then, the tension concentrates on the portion exposed in the groove ST that is not attached to the wafer W of the adhesive film FA. Then, as shown in FIG. 11, in the functional layer breaking step, the functional layer FL and TEGα are broken starting from the tapered groove ST, the adhesive film FA is broken starting from the groove ST, and the wafers W are separated from each other. Divide into chips DT. Thus, in the functional layer breaking step, the functional layer FL exposed with the narrow width W1 of the groove ST is broken with the narrow width W1 of the groove ST. In this way, the functional layer FL and the adhesive film FA are broken and divided for each chip DT along the division line S. Thereafter, the divided chips DT are removed from the expanded sheet TE and conveyed to the next process.

  According to the wafer processing method of the first embodiment, the groove ST formed in the plasma etching step is formed in a V-shape tapered in the depth direction from the back surface WR of the wafer W to the front surface WS, and is formed on the back surface WR of the wafer W. The adhesive film FA and the expanded sheet TE are attached to expand the expanded sheet TE. In the portion where the device D is formed, the functional layer FL is formed on the surface WS of the wafer W, and the functional layer FL is exposed in the trench ST without being supported by any division line S. For this reason, in the functional layer FL, the tension when the adhesive film FA and the expanded sheet TE are expanded is concentrated on the part to be divided line S, that is, the part exposed in the groove ST. Therefore, the functional layers FL and TEGα are broken at the portions exposed in the grooves ST. Therefore, according to the wafer processing method according to the first embodiment, by expanding the expanded sheet TE, the functional layers FL and TEGα on the division planned line S are not removed in advance with a laser or the like. Can be divided by the division line S.

  Further, the grooves ST are formed in a V-shape tapered in the depth direction from the back surface WR of the wafer W to the front surface WS, and the adhesive film FA and the expanded sheet TE are attached to the back surface WR of the wafer W. In the portion where the device D is formed, the wafer W, the adhesive film FA, and the expanded sheet TE are attached in this order, and in the scheduled division line S, the adhesive film FA and the expanded sheet TE are attached. For this reason, in the adhesive film FA, the tension when the adhesive film FA and the expanded sheet TE are expanded is concentrated on the part to be divided line S, that is, the part located in the groove ST. Therefore, according to the wafer processing method according to the first embodiment, the expanded sheet TE is expanded, and the adhesive film FA is divided along the planned division line S without removing the adhesive film FA on the planned division line S in advance. can do.

  Therefore, according to the wafer processing method of the first embodiment, the functional layer FL, TEGα and the adhesive film FA can be reliably divided on the division line S without increasing the number of man-hours. , TEGα and the amount of protrusion of the adhesive film FA from the outer periphery of the chip DT can be suppressed, and unnecessary adhesion of the adhesive film FA can be suppressed. Therefore, according to the wafer processing method according to the first embodiment, the number of man-hours when dividing the wafer W into the chips DT can be reduced.

[Embodiment 2]
A wafer processing method according to the second embodiment will be described with reference to FIGS. FIG. 12 is a perspective view showing an overview of an expand sheet attaching step of the wafer processing method according to the second embodiment, FIG. 13 is a sectional view of a grinding step of the wafer processing method according to the second embodiment, and FIG. FIG. 15 is a cross-sectional view of the wafer after the plasma etching step of the wafer processing method according to the second embodiment, and FIG. 16 is an embodiment of the wafer processing method according to the second embodiment. FIG. 17 is a cross-sectional view showing a resist film removing step of the wafer processing method according to FIG. 2, FIG. 17 is a cross-sectional view showing a state where an adhesive film is attached to the back surface of the wafer shown in FIG. 16, and FIG. Sectional drawing which shows the functional layer fracture | rupture step of the processing method of the wafer which concerns on Embodiment 2, FIG.18 (b) is sectional drawing which shows the state which fractured | ruptured the functional layer shown by Fig.18 (a). 12 to 18, the same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  In the wafer processing method according to the second embodiment, first, an expanded sheet sticking step is performed. In the expand sheet sticking step, as shown in FIG. 12, the expand sheet TE with the outer periphery mounted on the annular frame F is stuck on the surface WS of the wafer W. Then, the process proceeds to the grinding step.

  As shown in FIG. 13, the grinding step places the front surface WS of the wafer W on the chuck table 11 of the grinding apparatus 10 with the expanded sheet TE facing down, and exposes the back surface WR of the wafer W to the chuck table 11. While holding the suction, the annular frame F is clamped by the clamp portion 13. Thereafter, the back surface WR of the wafer W is ground by the grinding wheel 12 rotating around the axis of the grinding apparatus 10 to reduce the thickness to the finished thickness T. When the wafer W is thinned, the process proceeds to a resist film coating step.

  As in the first embodiment, in the resist film coating step, as shown in FIG. 14, the resist film R is coated on a region excluding the region corresponding to the division line S on the back surface WR of the wafer W on which the grinding step has been performed. Then, the process proceeds to the plasma etching step. As in the first embodiment, the plasma etching step is performed by a so-called Bosch process, as shown in FIG. 15, in a taper cross section from the back surface WR toward the front surface WS in a region corresponding to the division line S of the back surface WR of the wafer W. A V-shaped groove ST is formed. Then, in the resist film removing step, the resist film R is removed as shown in FIG. 16 as in the first embodiment, and the adhesive film FA is adhered to the back surface WR of the wafer W as shown in FIG. Then, proceed to the functional layer breaking step.

  As in the first embodiment, the functional layer breaking step holds the annular frame F on the frame holding means 41 of the expansion device 40 provided in the cooling chamber 50 as shown in FIG. 40 pressing members 42 are positioned below the expanded sheet TE. Then, after supplying cold air from the cold air supply port 51 into the cooling chamber 50 and cooling the inside of the cooling chamber 50 to a predetermined temperature, the pressing member 42 is raised as shown in FIG. TE is raised for each wafer W, and the expanded sheet TE to which the wafer W is adhered is expanded in the radial direction, and an external force that expands in the radial direction is applied to the wafer W and the adhesive film FA. Then, the adhesive film FA, the functional layer FL, and the TEGα are broken starting from the groove ST, and the wafer W is divided into individual chips DT. Thereafter, the divided chips DT are removed from the expanded sheet TE and conveyed to the next process.

  According to the wafer processing method according to the second embodiment, as in the first embodiment, the groove ST formed in the plasma etching step is formed in a V-shaped section tapered from the back surface WR of the wafer W to the front surface WS in the depth direction. Then, the adhesive film FA is attached to the back surface WR of the wafer W, and the expanded sheet TE attached to the front surface WS of the wafer W is expanded. For this reason, according to the wafer processing method according to the second embodiment, the expanded layers TE are expanded so that the functional layers FL and TEGα are not removed in advance without removing the functional layers FL and TEGα on the division planned line S. The adhesive film FA can be divided along the planned division line S without being previously removed, while being able to be divided along the planned division line S. Therefore, according to the wafer processing method according to the second embodiment, an increase in man-hours can be suppressed.

  Moreover, since it can process in the state which stuck the expanded sheet TE consistently from a grinding step to a functional layer fracture | rupture step, there exists an effect that work, such as re-pasting, is unnecessary. Moreover, according to the processing method of the wafer which concerns on Embodiment 2, since the expanded sheet TE is stuck on the surface WS of the wafer W at an expand sheet sticking step, the area which the expand sheet TE sticks is stuck on the back surface WR. Can be larger than wearing. For this reason, when the expand sheet TE is expanded, the positional deviation between the expand sheet TE and the wafer W can be suppressed, and the tension when the expand sheet TE is expanded is a groove in the functional layer FL, TEGα and the adhesive film FA. It concentrates on the part located in ST reliably, and functional layer FL, TEG (alpha) and adhesive film FA will fracture | rupture reliably from the groove | channel ST.

[Modification]
A wafer processing method according to a modification of the first embodiment will be described with reference to FIG. FIG. 19 is a cross-sectional view of the main part of the wafer W in the plasma etching step of the wafer processing method according to the modification of the first embodiment. In FIG. 19, the same parts as those of the first embodiment are denoted by the same reference numerals and the description thereof is omitted.

  In the wafer processing method according to the modification, the finished thickness T of the wafer W in the grinding step is made thinner than that in the first embodiment. For example, in the modification, the finished thickness T of the wafer W is 10 μm.

  In the wafer processing method according to the modification, in the plasma etching step, as shown in FIG. 19, the groove ST-1 has a rectangular cross section and a width W1-1 equal to the width W1 on the surface WS side of the first embodiment. Form. That is, in the modification, the time for performing the etching step and the protective film deposition step repeated in the plasma etching step is set to a certain time (preferably, the time around the last in the first embodiment). In the modification, the width W1-1 of the groove ST-1 is 1 μm.

  Thus, in the present invention, the taper shape from the back surface WR of the wafer W of the groove ST toward the front surface WS means that the aspect ratio of the groove ST (groove depth / groove width) is as small as about 10-20. That is, when the finished thickness T of the wafer W is as small as 30 μm or less, a groove having a width W1-1 constant in the depth direction is also included.

  According to the modification, as in the first embodiment, an increase in man-hours can be suppressed. Even in the modified example, as in the second embodiment, in the expanded sheet attaching step, the expand sheet TE attached to the annular frame F is attached to the surface WS of the wafer W, and then the grinding step. A plasma etching step or the like may be performed.

  In Embodiment 1 and Embodiment 2 described above, the groove ST having a V-shaped cross section is formed by a so-called Bosch process in the plasma etching step. However, the present invention is not limited to this, and the V-shaped cross section is formed by anisotropic etching. A groove ST may be formed. In addition, the resist film R may be applied in such a manner that the line to be divided is covered with a mask or the like.

  In addition, this invention is not limited to the said embodiment and modification. That is, various modifications can be made without departing from the scope of the present invention.

11 Chuck table D Device F Annular frame FL Functional layer R Resist film S Divided line ST Groove T Finish thickness TE Expand sheet W Wafer WS Surface WR Back surface W1 Width α TEG (Metal element for characteristic evaluation)

Claims (3)

A device is formed by a functional layer laminated on the surface of a substrate, and the device is a wafer processing method defined by a plurality of division lines,
A grinding step in which the back surface of the wafer is exposed and held on a chuck table, and the back surface of the wafer is ground and thinned to the finished thickness;
A resist film coating step for coating a resist film in a region excluding a region corresponding to the division line on the back surface of the wafer subjected to the grinding step;
Plasma etching is performed on the wafer on which the resist film coating step has been performed, and a groove for dividing the wafer is formed along the planned division line, leaving the functional layer.
An expanding sheet adhering step for adhering an expanding sheet attached to an annular frame on the back or surface of the wafer;
A functional layer breaking step of breaking the functional layer along the groove of the wafer by expanding the expanded sheet,
In the plasma etching step, the groove is formed in a tapered shape from the back surface to the front surface of the wafer, and the functional layer exposed in the narrow width of the tapered groove in the functional layer breaking step is a narrow width of the groove. A method for processing a wafer, wherein the wafer is broken at a step. The expanding sheet attaching step includes:
2. The wafer processing method according to claim 1, wherein an expanded sheet having an outer periphery mounted on an annular frame is attached to the back surface of the wafer in which the groove is formed. A metal element for characteristic evaluation is formed on the planned division line,
3. The wafer processing method according to claim 1, wherein in the functional layer breaking step, the metal element for characteristic evaluation is also broken.

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