JP2016086148A - Light emitting device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device capable of stable installation when installed as a side-view light emitting device.SOLUTION: A light emitting device 100 comprises: a semiconductor laminate 10; a p-side conductor 12 and an n-side conductor 14 which are electrically connected to a p-type semiconductor and an n-type semiconductor layer, respectively on one principal surface side of the semiconductor laminate 10; and a resin layer 16. The resin layer 16 has a top surface and an under surface and the other principal surface of the semiconductor laminate 10 is exposed on the under surface. The p-side conductor 12 has p-side external connection electrodes 12a, 12b and a p-side conductive member 12c for electrically connecting the p-side external connection electrodes 12a, 12b with each other. The n-side conductor 14 has n-side external connection electrodes 14a, 14b and an n-side conductive member 14c for electrically connecting the n-side external connection electrodes 14a, 14b with each other. Both of the p-side external connection electrodes 12a, 12b and the n-side external connection electrodes 14a, 14b are partially located outside the semiconductor laminate 10 in plan view.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a light emitting device and a method for manufacturing the same.

  A light-emitting device using a light-emitting chip (light-emitting element) such as a light-emitting diode is widely used because it can be easily miniaturized and has high light emission efficiency. As a light-emitting device, for example, in Patent Document 1, as shown in FIG. 10, an n-type semiconductor layer 2 and a p-type semiconductor layer 3 are stacked on a substrate 1, and n provided in the n-type semiconductor layer 2. A conductor 6 is provided on the mold electrode 4, and a conductor 7 is provided on the p-type electrode 5 provided on the p-type semiconductor layer 3. The connection portion 6c of the conductor 6 and the connection portion 7c of the conductor 7 correspond to each other. A flip chip type semiconductor element 200 is proposed which is formed at a position different from the upper portion 9 of the conductor 6 and the upper portion 10 of the conductor 7. In this semiconductor element 200, the connecting portions 6c and 7c of the conductors 6 and 7 are aligned with the first and second electrodes 13 and 14, and electrically connected by the conductive adhesives 11 and 12, The light is extracted from one side.

  In Patent Document 2, although not a light emitting device, in a semiconductor device in which a semiconductor element having a light detection portion on one surface is sealed with resin, an internal electrode provided on a resin surface on one surface side of the semiconductor element; There has been proposed a semiconductor device including an external electrode exposed on the resin surface on the other surface side of the semiconductor element. In this semiconductor device, the internal electrode is connected to the terminal electrode of the semiconductor element via a bump and is connected to the external electrode via a wire.

  The devices described in Patent Documents 1 and 2 are mounted on the upper surface or lower surface of the device (the side on which the p-electrode and n-electrode of the semiconductor are provided is the upper side and the opposite side is the lower side when viewed from the semiconductor). The electrodes are mounted so that the upper surface and the lower surface of the apparatus are parallel to the mounting surface of the mounting substrate.

  Patent Document 3 proposes a light-emitting device in which a resin layer is formed on one surface side of the light-emitting device and an external terminal is provided on a side surface of the resin layer. This light-emitting device is a side-view type light-emitting device by mounting so that the light-emitting surface is perpendicular to the mounting substrate.

JP 2003-282957 A JP 2008-251794 A JP 2012-146898 A

  However, when the conventional light emitting device is mounted, it may be difficult to stably mount the light emitting device under the influence of shrinkage or the like when an adhesive member such as solder is solidified. Specifically, when the light emitting device is pulled by contraction of the adhesive member, the light extraction surface of the light emitting device may be inclined, and light may not be extracted in a desired direction. In particular, in the side-view type light emitting device described in Patent Document 3, the light extraction surface of the light emitting device tends to be inclined due to contraction of the adhesive member.

  An object of the present invention is to provide a light-emitting device that can be stably mounted on a mounting substrate as a side-view type light-emitting device.

  One embodiment of the present invention includes a semiconductor stacked body having a p-type semiconductor layer and an n-type semiconductor layer, and a p-side electrically connected to the p-type semiconductor layer on one main surface side of the semiconductor stacked body. A conductor, an n-side conductor electrically connected to the n-type semiconductor layer on one main surface side of the semiconductor stacked body, and a resin covering one main surface side and side surface side of the semiconductor stacked body And a layer. The resin layer has an upper surface positioned on one main surface side of the semiconductor stacked body and a lower surface positioned on the other main surface side of the semiconductor stacked body, and the semiconductor stacked body on the lower surface And the p-side conductor is disposed on each of the upper and lower surfaces of the resin layer, and the p-side external connection is located in the resin layer and the p-side external connection. A p-side conductive member for connecting the electrodes to each other, wherein the n-side conductor is located in the resin layer, n-side external connection electrodes provided on the upper surface and the lower surface of the resin layer, respectively An n-side conductive member that connects the n-side external connection electrodes to each other, and in plan view, both the p-side external connection electrode and the n-side external connection electrode are partially laminated in the semiconductor stack. A light emitting device outside the body.

  According to the above light emitting device, when mounted as a side view type, the adhesive member can be positioned on each of the upper surface and the lower surface of the light emitting device, so that stable mounting is possible.

1 is a schematic perspective view of a light emitting device according to Embodiment 1. FIG. It is a schematic sectional drawing which shows the A-A 'cross section of the light-emitting device shown in FIG. It is a schematic side view which shows the state which attached the light-emitting device of Embodiment 1. FIG. (A) is a schematic plan view of the light-emitting device which concerns on the modification of Embodiment 1, (b) is the schematic side view. FIG. 6 is a schematic plan view (top view) of a light emitting device according to a modification of the first embodiment. (A) And (b) is a schematic sectional drawing which shows the positional relationship of the two edge parts of a p side electrically-conductive member. It is a schematic plan view which shows the positional relationship of the both ends of a p side conductive member and an n side conductive member. (A)-(h) is a schematic sectional drawing which shows each process of the manufacturing method of the light-emitting device which concerns on Embodiment 2. FIG. (A) And (b) is a schematic sectional drawing which shows 1 process of the manufacturing method of the light-emitting device which concerns on the modification of Embodiment 2. FIG. It is a schematic sectional drawing which shows the conventional light-emitting device.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, this invention is not limited to the form shown below. In addition, the matters described in the embodiments and the modifications thereof can be applied to other embodiments and modifications unless otherwise specified. Furthermore, the same reference numerals appearing in a plurality of drawings indicate the same parts or members. It should be noted that the accompanying drawings include parts exaggerated for the purpose of facilitating understanding of the invention.

  In this specification including the embodiment, the terms “up”, “down”, “left”, and “right” are used relatively or for convenience to indicate a position and a direction, and the light-emitting device is used. It does not represent the absolute position or direction.

<Embodiment 1: Light-emitting device>
The light-emitting device of this embodiment is shown in FIGS. FIG. 1 is a perspective view of the light-emitting device, and FIG. 2 is a cross-sectional view of the light-emitting device shown in FIG.
The light emitting device 100 according to the first embodiment includes a semiconductor stacked body 10 having a p-type semiconductor layer and an n-type semiconductor layer, a p-side conductor 12, an n-side conductor 14, and a resin layer 16. Yes. The p-side conductor 12 has p-side external connection electrodes 12b and 12a on the upper and lower surfaces of the resin layer 16, respectively, and a p-side conductive member 12c that connects the p-side external connection electrodes 12b and 12a to each other. . The n-side conductor 14 has n-side external connection electrodes 14b and 14a on the upper and lower surfaces of the resin layer 16, respectively, and an n-side conductive member 14c that connects the n-side external connection electrodes 14b and 14a to each other. . As will be described later, the lower surface of the resin layer 16 is the surface on the side where the semiconductor laminate 10 is exposed, and the upper surface of the resin layer 16 is the surface on the opposite side.

(Semiconductor laminate)
The semiconductor stacked body 10 has a structure in which a p-type semiconductor layer 10a and an n-type semiconductor layer 10b are stacked, and preferably includes an active layer 10d between the p-type semiconductor layer 10a and the n-type semiconductor layer 10b. . In the light emitting device according to the present embodiment, light is emitted by passing a current between the p-type semiconductor layer 10a and the n-type semiconductor layer 10b. The semiconductor stacked body 10 is composed of a nitride-based semiconductor compound such as In _X Al _Y Ga _1-XY N (0 ≦ X, 0 ≦ Y, X + Y <1) according to a desired emission color, luminance, and the like. Is done. The semiconductor structure may be a homostructure, a heterostructure, or a double heterostructure having a MIS junction, a PIN junction, or a PN junction. The active layer 10d may have a single quantum well structure or a multiple quantum well structure in which thin films that generate quantum effects are stacked.

  In the present embodiment, a p-side pad electrode 11a connected to the p-type semiconductor layer 10a and an n-side pad electrode 11b connected to the n-type semiconductor layer 10b are formed on one main surface of the semiconductor stacked body 10. Has been. Here, the main surface of the semiconductor stacked body 10 refers to two surfaces that face each other in the direction in which the p-type semiconductor layer 10a and the n-type semiconductor layer 10b are stacked among the surfaces that define the semiconductor stacked body. The p-side pad electrode 11 a is electrically connected to the p-side conductor 12, and the n-side pad electrode 11 b is electrically connected to the n-side conductor 14. In order to arrange both the p-side pad electrode 11a and the n-side pad electrode 11b on one main surface, for example, after forming the n-type semiconductor layer 10b and the p-type semiconductor layer 10a on the substrate in this order, the p-type semiconductor layer Part of the surface of 10a is removed to expose n-type semiconductor layer 10b, p-side pad electrode 11a is formed on the surface of p-type semiconductor layer 10a, and n-side pad electrode is formed on the exposed surface of n-type semiconductor layer 10b. 11b may be formed. Hereinafter, in this specification, the main surface side of the semiconductor stacked body 10 on which the p-side pad electrode 11a and the n-side pad electrode 11b are formed is referred to as “upper”, and the other main surface side opposite to the main surface is referred to as “upper”. Sometimes called "bottom".

  The other main surface of the semiconductor stacked body 10, that is, the lower surface of the semiconductor stacked body 10 is exposed from the resin layer 16 as illustrated, and becomes a light extraction surface 10 c from which light emitted from the semiconductor stacked body 12 is mainly extracted. . The light extraction surface 10c is a surface made of a semiconductor material constituting the semiconductor stacked body 10, and is a surface exposed by peeling the substrate after the semiconductor layer is stacked on the substrate as will be described later. The light extraction surface 10c is usually a surface from which the n-type semiconductor layer 10b is exposed.

(Resin layer)
The resin layer 16 covers one main surface side and the side surface side of the semiconductor stacked body 10, and functions as a base for supporting the semiconductor stacked body 10 and ensuring the mechanical strength of the light emitting device 100. Here, the resin layer “covers one main surface side and side surface side of the semiconductor laminate 10” means that the resin layer 16 is in contact with one main surface and side surface of the semiconductor laminate 10, Form in which semiconductor stacked body 10 is covered with another element (for example, p-side and n-side conductors) formed on the main surface and side surfaces without contacting one main surface and side surfaces of semiconductor stacked body 10 It is meant to include.

  In the present specification, of the two surfaces of the resin layer 16 substantially parallel to the main surface of the semiconductor stacked body 10, the surface on the side of the main surface on which the p-side pad electrode 11 a and the n-side pad electrode 11 b are formed. For convenience, the upper surface will be referred to as the “upper surface”, and the surface opposite to the upper surface will be referred to as the “lower surface”. As will be described later, the p-side second external connection electrode 12b and the n-side second external connection electrode 14b are provided on the upper surface of the resin layer 16, and the p-side first external connection electrode 12a and the n-side first electrode are provided on the lower surface. An external connection electrode 14a is provided. On the lower surface of the resin layer 16, the lower surface that is the light extraction surface 10 c of the semiconductor stacked body 10 is exposed.

  The resin forming the resin layer 16 is not particularly limited, and may be, for example, a thermosetting resin or a thermoplastic resin. As the thermosetting resin, specifically, an epoxy resin composition, a silicone resin composition, a modified epoxy resin composition such as a silicone-modified epoxy resin, a modified silicone resin composition such as an epoxy-modified silicone resin, a polyimide resin composition, And a modified polyimide resin composition. Examples of the thermoplastic resin include a liquid crystal polymer, a polyphthalamide resin, and a polybutylene terephthalate resin.

  As will be described later, after forming part of the p-side conductor 12 and part of the n-side conductor 14, the resin layer 16 is a thermosetting resin that has fluidity before thermosetting, or has melted. A thermoplastic resin is formed by pouring into a mold or the like. Therefore, as will be described later, when a part of each conductor is a wire or a thin one similar thereto, if the viscosity of the poured resin is high, the wire or the like may be damaged, and a predetermined electrical connection can be obtained. It may not be possible. In order to avoid such inconvenience, it is preferable that the resin layer 16 is formed by curing a resin having a relatively low viscosity by heating or cooling.

  Further, when a part of the p-side conductor 12 and the n-side conductor 14 is thin like a wire, the degree when the cured resin expands or contracts due to a change in ambient temperature or the like. When the is large, damage to the wire or the like occurs. Therefore, it is preferable that the resin forming the resin layer 16 has a small coefficient of thermal expansion. For example, it preferably has a coefficient of thermal expansion of less than 250 ppm / K, more preferably less than 100 ppm / K when the resin is cured. Have. Here, the thermal expansion coefficient in the present invention means a linear expansion coefficient. Moreover, the thermal expansion coefficient of various resins can be measured as an average linear expansion coefficient in the measurement temperature range according to JIS K7197.

The resin layer 16 preferably contains a filler that imparts light blocking properties so that light emitted from the semiconductor laminate 10 does not pass through. In this way, light emission from a surface other than the light extraction surface 10c can be suppressed, and a light emitting device having desired light distribution characteristics can be obtained. The filler that imparts light blocking properties is preferably a material that reflects light from the semiconductor laminate 10. Examples of such a filler include an oxide selected from TiO ₂ , SiO ₂ , Al ₂ O ₃ , MgO, MgCO ₃ , CaCO ₃ , Mg (OH) ₂ , and Ca (OH) _2. Particles.

Alternatively, the filler may make the resin layer 16 light-shielding by absorbing light from the semiconductor laminate 10. Such fillers are, for example, carbon such as acetylene black, activated carbon, and graphite, metal oxides such as iron oxide, manganese dioxide, cobalt oxide, and molybdenum oxide, and organic pigments.
The filler is contained in the resin layer 16 in an amount that blocks light from the semiconductor stacked body 10 preferably about 50% or more, more preferably about 70% or more. For example, TiO ₂ is preferably contained in the resin layer in a proportion of 30 wt% to 80 wt%.

  The shape, size, and thickness of the resin layer 16 in plan view depend on the number and size of the semiconductor stacked body 10 included in the light emitting device 100 and the sizes of the p-side conductor 12 and the n-side conductor 14. The light emitting device 100 having a desired size may be selected.

(P-side conductor / n-side conductor)
As described above, in the present embodiment, the p-side conductor 12 and the n-side conductor 14 are provided, and electricity is supplied to the semiconductor stacked body 10 from the outside. On one main surface side of the semiconductor stacked body 10, the p-side conductor 12 is electrically connected to the p-type semiconductor layer 10a, and the n-side conductor 14 is electrically connected to the n-type semiconductor layer 10b. “These conductors are connected on one main surface side” means that these conductors are electrically connected to the p-type semiconductor layer 10a and the n-type semiconductor layer 10b on one side of the semiconductor stacked body 10. It is secured on the main surface. The electrical connection is ensured, for example, by arranging a part of these conductors on one main surface of the semiconductor stacked body 10. In the present embodiment, a p-side pad electrode 11a and an n-side pad electrode 11b are formed on one main surface of the semiconductor laminate 10, and a part of the p-side conductor 12 and the p-side conductor 12 are in contact with these electrodes. A part of the n-side conductor 14 is disposed on one main surface of the semiconductor stacked body 10.

  In the p-side conductor 12 of the present embodiment, the portion electrically connected to the p-side pad electrode 11a and the p-side external connection electrode 12a provided on the lower surface of the resin layer 16 are integrated. Is formed. Also in the n-side conductor 14, similarly to the p-side conductor 12, the n-side pad electrode 11 b and the n-side external connection electrode 14 a provided on the lower surface of the resin layer 16 are integrally formed. Yes. In the present embodiment, the p-side external connection electrode 12b and the n-side external connection electrode 14b are also provided on the upper surface of the resin layer 16, and a pair of p-side external connection electrodes 12a and 12b. And a pair of n-side external connection electrodes 14 a and 14 b are provided so as to face each other in the thickness direction of the resin layer 16.

The p-side conductor 12 has a p-side conductive member 12c that is located in the resin layer 16 and connects the p-side external connection electrodes 12a and 12b to each other, and the n-side conductor 14 is in the resin layer 16. The n-side conductive member 14c is located and connects the n-side external connection electrodes 14a and 14b to each other.
By the p-side conductive member 12c, the p-side external connection electrode 12b is electrically connected to the p-side pad electrode 11a through the p-side external connection electrode 12a. In addition, the n-side conductive member 14c causes the n-side external connection electrode 14b to be electrically connected to the n-side pad electrode 11b via the n-side external connection electrode 14a.

Hereinafter, each part which comprises the p side conductor 12 and the n side conductor 14 is demonstrated.
In the following description, the p-side external connection electrode 12 a provided on the lower surface of the resin layer 16 is referred to as a “p-side first external connection electrode” and is used for the p-side external connection provided on the upper surface of the resin layer 16. The electrode 12b is referred to as a “p-side second external connection electrode”. The p-side first external connection electrode and the p-side second external connection electrode are collectively referred to as “p-side external connection electrode”. Similarly, the n-side external connection electrode 14a provided on the lower surface of the resin layer 16 is referred to as an “n-side first external connection electrode”, and the n-side external connection electrode 14b provided on the upper surface of the resin layer 16 is referred to as “n-side first external connection electrode”. This is referred to as “n-side second external connection electrode”. The n-side first external connection electrode and the n-side second external connection electrode are collectively referred to as “n-side external connection electrode”.

  In the illustrated form, the p-side first external connection electrode 12a is provided on the lower surface of the resin layer 16, and the portion 12f of the p-side conductor 12 ensuring electrical connection with the p-side pad electrode 11a ( In the figure, it is formed integrally with a portion located on the upper surface of the semiconductor laminate 10 (hereinafter also referred to as “p-side semiconductor connection portion”). The p-side first external connection electrode 12a has a crank shape as shown in FIG. 2 together with the p-side semiconductor connection portion 12f in a cross-sectional view including the p-side pad electrode 11a. Obviously it has a rectangle. Similarly, the n-side first external connection electrode 14a is also provided on the lower surface of the resin layer 16, and the portion 14f of the n-side conductor 14 that secures electrical connection with the n-side pad electrode 11b (hereinafter, “ and an n-side semiconductor connection portion).

  As long as the p-side first external connection electrode 12a and the p-side semiconductor connection portion 12f are electrically connected, the p-side first external connection electrode 12a and the p-side first external connection electrode 12a, The side semiconductor connection portion 12f may be formed separately. In that case, the p-side first external connection electrode 12a and the p-side semiconductor connection portion 12f may be electrically connected by, for example, a wire. The same applies to the n-side first external connection electrode 14a and the n-side semiconductor connection portion 14f. Alternatively, the p-side first external connection electrode 12a and the p-side pad electrode 11a, and the n-side first external connection electrode 14a and the n-side pad electrode 11b may be directly connected by a wire.

  In plan view, the p-side first external connection electrode 12 a and the n-side first external connection electrode 14 a are outside the semiconductor stacked body 10. With this configuration, it is possible to prevent light emitted from the semiconductor stacked body 10 from being blocked by the p-side first external connection electrode 12a and the n-side first external connection electrode 14a.

  In the illustrated embodiment, the light extraction surface 10c (the main surface on which the p-side pad electrode 11a and the n-side pad electrode 11b are not formed), the lower surface of the p-side first external connection electrode 12a, and the n-side The lower surface of the first external connection electrode 14a is located on substantially the same plane. Thereby, since it can suppress that the light from the light extraction surface 10c of the semiconductor laminated body 10 is interrupted | blocked by the electrode 14 for external connection, it can be set as the light emitting element which has a desired light distribution characteristic. The lower surface of the p-side first external connection electrode 12a and the lower surface of the n-side first external connection electrode 14a refer to the surface of the semiconductor stacked body 10 on the light extraction surface 10c side.

  In plan view, the p-side first external connection electrode 12a and the n-side first external connection electrode 14a have the same size and shape, and are arranged with the light extraction surface 10c of the semiconductor stacked body 10 interposed therebetween. ing. Further, the p-side first external connection electrode 12a and the p-side second external connection electrode 12b, and the n-side first external connection electrode 14a and the n-side second external connection electrode 14b have substantially the same size and shape. Have. Furthermore, in plan view, the p-side first external connection electrode 12a and the p-side second external connection electrode 12b overlap each other, and the n-side first external connection electrode 14a and the n-side second external connection electrode 14b overlaps. Accordingly, in the illustrated form, the four external connection electrodes 12a, 12b, 14a, and 14b have substantially the same size in plan view, and are vertically symmetrical in the plan view and the side view. Has been placed.

  As shown in the figure, if two external connection electrodes are formed on the upper surface and the lower surface of the light emitting device 100, respectively, when the light emitting device 100 is attached as a side view type using an adhesive member such as solder, The force applied to the light emitting device 100 due to the contraction of the member can be made uniform. Specifically, as shown in FIG. 3, of the side surfaces of the light emitting device 100, the surfaces on which the four external connection electrodes are located at the four corners (the side surface seen in the front in FIG. 1) are the surfaces on which the light emitting device 100 is attached. The light emitting device 100 is attached so as to face 20 (for example, the mounting surface of the mounting substrate). By fixing the four external connection electrodes 12a, 12b, 14a, and 14b with the adhesive member 22, a force is evenly applied to the upper and lower surfaces of the light emitting device 100, so that stable mounting is possible. In particular, if the size and shape of the four external connection electrodes 12a, 12b, 14a, and 14b are the same, the same amount of the adhesive member 22 can be applied to each external connection electrode in the same state, which is more stable. Implementation becomes possible.

  The p-side external connection electrodes 12a and 12b and the n-side external connection electrodes 14a and 14b may not be formed vertically and horizontally symmetrical. If the p-side external connection electrodes 12a and 12b and the n-side external connection electrodes 14a and 14b are formed so as to sandwich the resin layer 16 in the thickness direction, the p-side external connection only on one surface of the resin layer As compared with the case where the electrode and the n-side external connection electrode are formed, the light emitting device can be stably mounted. For example, as shown in FIG. 4, the p-side second external connection electrode 12b is made larger than the p-side first external connection electrode 12a, and the n-side second external connection electrode 14b is made n-side first. You may form larger than the electrode 14a for external connection. At this time, each of the p-side second external connection electrode 12b and the n-side second external connection electrode 14b may be formed so as to be located inside the semiconductor stacked body 10 in plan view. Alternatively, in another modification, the size of the p-side first external connection electrode 12a may be larger or smaller than the size of the n-side first external connection electrode 14a in plan view. Similarly, in still another modification, the size of the p-side second external connection electrode 12b may be larger or smaller than the size of the n-side second external connection electrode 14b in plan view. .

  In the side surface of the resin layer 16 facing the surface 20 to which the light emitting device 100 is attached, the end surfaces of the p-side external connection electrodes 12 a and 12 b are preferably located on the same plane as the side surface of the resin layer 16. According to such an arrangement, when the light emitting device 100 is attached to a mounting substrate, for example, as shown in FIG. 3, the wiring or pad electrode 24 formed on the surface 20 to which the light emitting device 100 is attached, and the resin The side surface of the layer 16 and the end surfaces of the p-side external connection electrodes 12a and 12b can be made continuous. Therefore, when the light emitting device 100 is mounted on the mounting substrate using the adhesive member 22, the contact area between the resin layer 16 and the mounting surface 20 (strictly, the wiring 24 and the like) is increased, and stable mounting is possible. Similarly, the end surfaces of the n-side external connection electrodes 14 a and 14 b are preferably located on the same plane as the side surface of the resin layer 16 on the side surface of the resin layer 16 facing the surface 20 to which the light emitting device 100 is attached.

  The p-side external connection electrodes 12a and 12b and the n-side external connection electrodes 14a and 14b are formed from one end of the resin layer 16 in the short direction of the upper surface or the lower surface of the resin layer 16 (that is, the light emitting device 100). It does not need to be arranged so as to cover all the other end. Specifically, as shown in FIG. 5, in a plan view, the p-side first external connection electrode 12a and the n-side first external connection electrode 14a, and the p-side second external connection electrode 12b and the n-side first electrode (2) The external connection electrode 14b does not extend from one end to the other end of the resin layer 16 in the short direction of the lower surface and the upper surface of the resin layer 16, and the region of one end or the other end of the resin layer 16 may be exposed ( FIG. 5 shows the lower surface side of the resin layer 16). Such an exposed region can be a margin for separating the light emitting device 100 when the light emitting device 100 is manufactured by a method described later.

  In plan view, the size of the p-side external connection electrodes 12a and 12b and the n-side external connection electrodes 14a and 14b is not particularly limited, and the number and size of the semiconductor stacked bodies 10 and the size of the light emitting device 100 are not limited. It can change suitably according to etc. For example, the p-side external connection electrodes 12a and 12b and the n-side external connection electrodes 14a and 14b are ¼ to ３ with respect to the length of the long side of the rectangular light emitting device in plan view. The width may be as follows. Further, the p-side external connection electrodes 12a and 12b and the n-side external connection electrodes 14a and 14b may be formed in a rectangular or square shape having substantially the same length as the short side of the light emitting device. The thickness of the external connection electrode 12a and the n-side external connection electrode 14a is preferably, for example, 0.5 μm to 50 μm, and more preferably 1 μm to 3 μm when formed by sputtering. The thickness of the external connection electrode 12b and the n-side external connection electrode 14b is preferably, for example, 0.5 μm to 50 μm, and more preferably 1 μm to 3 μm when formed by sputtering.

  The p-side external connection electrodes 12a and 12b and the n-side external connection electrodes 14a and 14b are formed of a conductive material. The conductive material is not particularly limited, and examples thereof include metals such as gold, copper, platinum, silver, aluminum, tungsten, molybdenum, iron, nickel, and cobalt, and alloys thereof. As will be described later, the method of forming the p-side external connection electrodes 12a and 12b and the n-side external connection electrodes 14a and 14b is not particularly limited, and may be formed by vapor deposition, sputtering, or plating, for example. The p-side first external connection electrode 12a may be made of a material different from the p-side second external connection electrode 12b, and the n-side first external connection electrode 14a The electrode 14b may be made of a different material.

  In the illustrated form, the p-side first external connection electrode 12a and the p-side semiconductor connection portion 12f, the n-side first external connection electrode 14a and the n-side semiconductor connection portion 14f are integrally formed. Therefore, the p-side semiconductor connection portion 12f and the n-side semiconductor connection portion 14f are formed of the same material as the p-side first external connection electrode 12a and the n-side first external connection electrode 14a. In a modified example, the p-side first external connection electrode 12a may be formed of a material different from that of the p-side semiconductor connection portion 12f, and the n-side first external connection electrode 14a is connected to the n-side semiconductor connection portion 14f. May be formed of different materials.

  The p-side conductor 12 includes a p-side conductive member 12c that connects the p-side first external connection electrode 12a and the p-side second external connection electrode 12b to each other, and thereby the p-side first external connection electrode. 12a and the p-side second external connection electrode 12b are electrically connected. Similarly, the n-side conductor 14 includes an n-side conductive member 14c that connects the n-side first external connection electrode 14a and the n-side second external connection electrode 14b to each other.

  In the illustrated form, the p-side conductive member 12c and the n-side conductive member 14c are metal wires. According to the metal wire, two external connection electrodes can be connected by a relatively simple method as will be described later. In the case of using a metal wire, the p-side second end portion 12e connected to the p-side second external connection electrode 12b is connected to the p-side second electrode 12b by utilizing the property of bending. The structure located near the semiconductor stacked body 10 in a plan view can be easily obtained as compared with the p-side first end 12d connected to the first external connection electrode 12a. Similarly, according to the metal wire, the n-side second end portion 14e connected to the n-side second external connection electrode 14b is replaced with the n-side first end portion connected to the n-side first external connection electrode 14a. The structure located near the semiconductor stacked body 10 in a plan view can be obtained more easily than 14d.

  When the two ends of the conductive member satisfy the above positional relationship, as shown in FIG. 2, the p-side second end 12 e and the n-side second end 14 e are respectively the p-side first end in the sectional view. 12d and n-side first end portion 14d are preferably located closer to the semiconductor stacked body 10. In this way, when the p-side external connection electrodes 12a and 12b and the n-side external connection electrodes 14a and 14b are formed by a method described later, the p-side second external connection electrode 12b and the n-side second electrode are formed. It is possible to widen an allowable range with respect to the inward displacement of the external connection electrode 14b in plan view. Thereby, the light-emitting device 100 can be manufactured stably. This point will be described with reference to FIG.

  FIGS. 6A and 6B are partial cross-sectional views of the light emitting device 100 showing an example of the positional relationship between the p-side first end 12d and the p-side second end 12e of the p-side conductive member 12c. . When the size of the p-side second external connection electrode 12b is as shown in the figure, it is necessary to secure an electrical connection between the p-side first external connection electrode 12a and the p-side second external connection electrode 12b. The p-side second external connection electrode 12b needs to be in contact with the p-side second end 12e. Therefore, as shown in FIG. 6A, when the p-side second end portion 12e is closer to the semiconductor stacked body 10 than the p-side first end portion 12d in a plan view, the p-side second end portion 12e is formed to have the illustrated size. The left edge of the p-side second external connection electrode 12b needs to be positioned within a range of a width t sandwiched between two dotted lines.

  On the other hand, as shown in FIG. 6B, when the p-side first end 12d and the p-side second end 12e are at the same position in plan view, the size is the same as that shown in FIG. The left edge of the p-side second external connection electrode 12b needs to be positioned in a region having a width t ′ sandwiched between two dotted lines. The width t ′ of this region is the width t of the region shown in FIG. Smaller than. As described above, when the two end portions are in the positional relationship shown in FIG. 6A, the allowable range of the position that the p-side second external connection electrode 12b can take is as shown in FIG. 6B. It is larger than that in the positional relationship shown in FIG. That is, in the positional relationship shown in FIG. 6A, the permissible range for the inward displacement of the p-side second external connection electrode 12b in plan view is wide. The same applies to the positional relationship between the n-side first end 14d and the n-side second end 14e.

  In a configuration in which the p-side second end 12e is positioned closer to the semiconductor stacked body 10 than the p-side first end 12d in plan view, the distance between the two ends may be, for example, about 25 μm to 300 μm. . The distance between the two ends is a distance indicated by s in FIG. 7 which is a plan view (bottom view) excluding the p-side first external connection electrode 12a and the n-side first external connection electrode 14a. is there. When the p-side second end portion 12e and the p-side first end portion 12d are displaced in the y direction in FIG. 7 (in FIG. 7, the p-side second end portion displaced in the y direction is indicated by 12e ′. In addition, the distance in the x direction between both ends is s. Similarly, the distance s ′ between the n-side first end 14d and the n-side second end 14e may be about 25 μm to 300 μm.

  When metal wires are used for the p-side conductive member 12c and the n-side conductive member 14c, they may not be curved in the resin layer 16 as shown in FIG. 2, and may be, for example, linear or crank-shaped. When a metal wire is used for the p-side conductive member 12c, the preferred positional relationship between the p-side first end portion 12d and the p-side second end portion 12e is as described above regardless of the shape in cross-sectional view. Does not exclude other positional relationships. Therefore, in the plan view, the p-side second end 12e may be located farther from the semiconductor stacked body 10 than the p-side first end 12d, or both ends may be located at the same position in the plan view. Good. The same applies to the positional relationship between the n-side first end 14d and the n-side second end 14e.

  The metal wire is made of a conductive material, and for example, metals such as gold, copper, platinum, and aluminum, and alloys thereof can be used. The metal wire may be made of the same material as the p-side external connection electrodes 12a and 12b and the n-side external connection electrodes 14a and 14b, or may be made of a different material. The diameter of the metal wire is, for example, preferably 15 μm to 50 μm, and more preferably 20 μm to 40 μm. As will be described later, when the metal wire is connected to the p-side first external connection electrode 12a and the n-side first external connection electrode 14a by ball bonding, the p-side first end 12d and the n-side first end 14d becomes thicker than the diameter of the wire.

  When the p-side conductive member 12c and the n-side conductive member 14c are metal wires, a plurality of the p-side conductive member 12c and the n-side conductive member 14c may be provided. Thereby, when manufacturing the light-emitting device 100 by a method described later, the positions of the positions where the p-side second external connection electrode 12b and the n-side second external connection electrode 14b are to be formed are increased, and the formation position is specified. Becomes easier.

  In the modification, the p-side conductive member 12c and the n-side conductive member 14c may be columnar bodies (pillars) formed by metal plating or the like. Even when columnar bodies are formed as the p-side conductive member 12c and the n-side conductive member 14c, the p-side second end 12e connected to the p-side second external connection electrode 12b is used for the p-side first external connection. The p-side first end 12d connected to the electrode 12a is preferably positioned closer to the semiconductor stacked body 10 in plan view. Further, the n-side second end portion 14e connected to the n-side second external connection electrode 14b is more planarly viewed than the n-side first end portion 14d connected to the n-side first external connection electrode 14a. It is preferable that the semiconductor stacked body 10 be positioned in the vicinity. As a result, the light emitting device 100 can be manufactured with a wider tolerance for the inward displacement of the p-side second external connection electrode 12b and the n-side second external connection electrode 14b in plan view. The shape of the columnar body is not particularly limited, and may be, for example, a tapered shape that tapers from the lower surface to the upper surface of the resin layer 16.

  The material of the columnar body is not particularly limited, and the columnar body may be formed by the materials exemplified as the materials for the p-side external connection electrodes 12a and 12b and the n-side external connection electrodes 14a and 14b. The columnar body may be made of the same material as the p-side external connection electrodes 12a and 12b and the n-side external connection electrodes 14a and 14b, or may be made of a different material.

(Other)
The light emitting device 100 may include a sealing member. The sealing member is provided so as to cover the light extraction surface 10 c of the semiconductor stacked body 10. It is preferable that the sealing member has a light-transmitting property that allows light from the semiconductor stacked body 10 to pass therethrough and has a property that is not easily deteriorated by the light and heat generated by the semiconductor stacked body 10. As a material for the sealing member, for example, an epoxy resin composition, a silicone resin composition, an acrylic resin composition, a modified epoxy resin composition such as a silicone-modified epoxy resin, a modified silicone resin composition such as an epoxy-modified silicone resin, glass, Examples thereof include silica sol. The shape of the sealing member is not particularly limited, and may be, for example, a convex lens shape, a concave lens shape, or a Fresnel lens shape. Alternatively, the sealing member may be formed as a flat film.

The sealing member may include a wavelength conversion member that converts the wavelength of light from the semiconductor stacked body 10. For example, the wavelength conversion member absorbs part of the light from the semiconductor stacked body 10 to form a semiconductor stack. It may be a phosphor that emits light having a wavelength different from the wavelength of light from the body 10. For example, when the semiconductor laminate 10 is formed by laminating a nitride-based semiconductor and emits light having a peak wavelength in the range of 420 nm to 490 nm, the phosphor emits green and / or yellow. It is preferable to use a YAG-based phosphor, an α or β sialon type phosphor, or the like, and (Sr, Ca) AlSiN ₃ : Eu that emits red light if necessary. In this way, white light that is a mixed color light of the light from the semiconductor stacked body 10 and the light from the phosphor can be extracted from the light emitting device 100. The sealing member may contain other additives such as a colorant and a light diffusing agent instead of or together with the wavelength conversion member.

(Embodiment 2: Manufacturing method of light emitting device)
As a second embodiment, a method for manufacturing the light emitting device 100 shown in FIGS. 1 and 2 will be described.

  First, as shown in FIG. 8A, a semiconductor stacked body 10 having a p-type semiconductor layer and an n-type semiconductor layer is formed on a substrate 30, and a p-type is formed on one main surface side of the semiconductor stacked body 10. The step (a) of forming a p-side pad electrode electrically connected to the semiconductor layer and an n-side pad electrode electrically connected to the n-type semiconductor layer is performed. The semiconductor stacked body 10 is in a state of being separated corresponding to each light emitting device so as to be included in one light emitting device 100, and the surface of the substrate 30 is exposed between each semiconductor stacked body 10. The portion is a portion where the p-side first external connection electrode 12a and the n-side first external connection electrode 14a are formed.

  As a method for forming the semiconductor stacked body 10 in this manner, for example, after sequentially stacking an n-type semiconductor layer and a p-type semiconductor layer on the entire surface of the substrate 30, the portion other than the portion to be exposed of the substrate 30 is obtained by photolithography. There is a method of etching after forming a resist pattern. That is, by removing portions other than the semiconductor stacked body 10 corresponding to each light emitting device by etching, the semiconductor stacked body 10 is formed at intervals on the substrate 30, and the surface of the substrate 30 in plan view (top view) The structure where the area | region which exposed exposed can surround the outer periphery of the semiconductor laminated body 10 can be obtained.

  The p-side pad electrode and the n-side pad electrode may be formed before performing the etching that exposes the substrate 30, or may be formed after performing the etching that exposes the substrate 30. The n-side pad electrode may be formed by removing a part of the p-type semiconductor layer to expose the n-type semiconductor layer and then forming the n-side pad electrode on the exposed n-type semiconductor layer.

  The substrate 30 is not particularly limited, and a substrate 30 suitable for growing a semiconductor is selected according to the type of the p-type semiconductor and the n-type semiconductor. For example, when the p-type semiconductor and the n-type semiconductor are nitride-based semiconductors (particularly, gallium nitride-based semiconductors), a sapphire substrate, a SiC substrate, or a spinel substrate may be used as the substrate 30. The substrate 30 has a thickness of about 100 μm to 300 μm, for example.

  Next, as shown in FIG. 8B, a step (b) of forming the p-side first external connection electrode 12a and the n-side first external connection electrode 14a on the substrate 30 is performed. In the illustrated form, the p-side first external connection electrode 12a is formed integrally with the p-side semiconductor connection portion 12f formed on the surface of the p-side pad electrode, and the n-side first external connection electrode 14a is It is formed integrally with the n-side semiconductor connection portion 14f formed on the surface of the n-side pad electrode.

  Examples of the method for forming the p-side first external connection electrode 12a, the n-side first external connection electrode 14a, the p-side semiconductor connection portion 12f, and the n-side semiconductor connection portion 14f include vapor deposition, plating, or sputtering. It can be used suitably. Specifically, for example, a metal thin film is formed on the entire surface of the semiconductor laminate 10 and the substrate 30, and the p-side first external connection electrode 12a, the n-side first external connection electrode 14a, and the like are formed by photolithography. A resist pattern is formed on the desired portion. Etching is then performed to form the p-side first external connection electrode 12a, the n-side first external connection electrode 14a, and the like at desired positions. In another method, a resist pattern is formed by photolithography on a portion where the p-side first external connection electrode 12a and the n-side first external connection electrode 14a are not formed, and the entire metal thin film is formed by sputtering or vapor deposition. To form. Thereafter, lift-off is performed to remove the resist pattern and the metal thin film formed thereon, thereby forming the p-side second external connection electrode 12b, the n-side second external connection electrode 14b, and the like at desired positions. You can do it.

  In the illustrated embodiment, in the adjacent light emitting devices (strictly, the region to be singulated), the p-side first external connection electrode 12a of one light-emitting device and the n-side first of the other light-emitting device. A gap is formed between the external connection electrode 14a and the boundary of the light emitting device 100 is clarified. In a modification, the p-side first external connection electrode 12a and the n-side first external connection electrode 14a may be formed integrally and separated into two electrodes by cutting. When the light emitting device 100 having the form shown in FIG. 5 is manufactured, a gap may be formed in a direction parallel to the longitudinal direction of the light emitting device 100.

  In the step (b), a part of the p-side first external connection electrode 12a and the n-side first external connection electrode 14a are formed in a region where the surface of the substrate 30 is exposed, and the surface of the substrate 30 is exposed. The other main surface (the main surface on which the p-side pad electrode and the n-side pad electrode are not formed) is in contact with the region that is not formed. Accordingly, the lower surface of the p-side first external connection electrode 12a, the lower surface of the n-side first external connection electrode 14a, and the other main surface of the semiconductor stacked body 10 (the main surface is exposed by removing the substrate 30). Thus, the light emitting device 100 having a configuration in which the light extraction surface 10c is located on the same plane can be manufactured.

  Next, one end 12d is connected to the p-side first external connection electrode 12a, and a part of the p-side conductive member 12 is located above one main surface of the semiconductor laminate 10, and one end Step (c) is performed in which the portion 14 d is connected to the n-side first external connection electrode 14 a and a part of the n-side conductive member 14 is located above one main surface of the semiconductor multilayer body 10. .

  In the present embodiment, as shown in FIG. 8C, the wire 32 is used to form the p-side conductive member 12 and the n-side conductive member 14. The wire 32 is provided so as to straddle the semiconductor stacked body 10, and one end of the wire 32 is connected to the p-side first external connection electrode 12a, and the other end is connected to the n-side first external connection electrode 14a. Wire bonding (for example, ball bonding) is performed. As a result, in step (c), the p-side first external connection electrode 12a and the n-side first external connection electrode 14a are integrally connected by the wire 32. The wire 32 is separated into a p-side conductive member 12c and an n-side conductive member 14c in a step (e) described later. At this time, the end portion of the wire 32 wire-bonded to the p-side first external connection electrode 12a is wire-bonded to the p-side first end portion 12d of the p-side conductive member 12c and the n-side first external connection electrode 14a. The end portion of the wire 32 becomes the n-side first end portion 14d of the n-side conductive member 14c.

  Since the wire 32 is arranged so as to straddle the semiconductor stacked body 10, when the wire 32 is separated in the step (e) described later, an end portion formed by the separation is a p-side pad electrode of the semiconductor stacked body 10. And it will be located above the main surface in which the n side pad electrode was formed. By separating the wire 32, the p-side second end 12e connected to the p-side second external connection electrode 12b and the n-side second end connected to the n-side second external connection electrode 14b. 14e are formed.

  Further, when bonding the wire 32 so as to straddle the semiconductor stacked body 10, the wire 32 is preferably shaped to be curved from the outside to the inside of the light emitting device 100. In this way, when the wire 32 is separated, in the plan view, the p-side second end 12e and the n-side second end 14e are respectively the p-side first end 12d and the n-side first It is easier to obtain a configuration in which the one end portion 14d is located closer to the semiconductor stacked body 10 than the one end portion 14d. Further, since the wires 32 are bonded so as to straddle the semiconductor laminate 10, even if a force is applied to the wires 32 when forming the resin layer 16, the wires 32 are not easily tilted or tilted. The shape of the wire 32 can be maintained. Thereby, when removing the resin layer 16 in the step (e) described later, the p-side second end 12e and the n-side second end 14e of the wire are easily exposed at predetermined positions.

  In the modification, the wire does not straddle the semiconductor stacked body, and in the adjacent light emitting device (strictly, the region to be singulated), the p-side first external connection electrode of one light emitting device, The n-side first external connection electrode of the other light emitting device may be bonded.

  Subsequently, as shown in FIG. 8D, a resin layer 16 is formed. The resin layer 16 may be formed by injection molding, transfer molding, compression molding, or the like. In the illustrated form, the resin layer 16 is preferably formed with a thickness that completely covers the wire 32. Thereby, since the wire 32 is fixed by the resin layer 16, it becomes easy to isolate | separate the wire 32 by the removal of the resin layer 16 in the process (e) mentioned later. You may form the thickness of the resin layer 16 so that it may become thick about 1.5 times-3.0 times with respect to the thickness of the resin layer 16 to be finally obtained, for example. In step (e) described later, if the thickness of the resin layer 16 is 1.5 times or more the thickness of the resin layer 16 to be finally obtained, the accuracy required when removing the resin layer 16 When the ratio is 3.0 times or less, an increase in the amount of the resin layer 16 to be removed can be suppressed. As a result, since the step (e) described later can be performed efficiently, the yield can be improved.

  When forming the resin layer 16, the resin in a fluid state moves on the surface of the substrate 30 and comes into contact with the wires 32. At this time, if a strong force acts on the wire 32, the wire 32 may be damaged. In order to avoid such an inconvenience, it is preferable that the resin constituting the resin layer 16 has a low viscosity in a fluid state. For example, the resin preferably has a viscosity of less than 100 Pa · s, more preferably a viscosity of 10 Pa · s to 20 Pa · s during molding. Here, the viscosity is a value measured according to JIS K6249.

  Next, as illustrated in FIG. 8E, the resin layer 16 is removed from one main surface side of the semiconductor stacked body 10, so that the p-side second end portion 12 e and the n-side conductivity of the p-side conductive member 12 c are obtained. The step (e) of exposing the n-side second end 14e of the member 14c from the resin layer 16 is performed. The removal of the resin layer 16 may be performed by grinding, polishing, cutting, or the like. Specifically, for example, a polishing apparatus that performs polishing using an artificial diamond, alumina, sapphire, or hard glass as an abrasive is used. .

  By removing the resin layer 16, a part of the wire 32 located in the resin layer 16 is also removed. As a result, the wires 32 are separated to form the p-side conductive member 12 c and the n-side conductive member 14 c in the resin layer 16, and the p-side second end portion 12 e and the n-side second end portion 14 e are connected to the resin layer 16. Exposed from. The removal of the resin layer 16 may be terminated when it is confirmed that the wires 32 are separated and the p-side second end 12e and the n-side second end 14e are formed. In order to adjust the positions of the end portion 12e and the n-side second end portion 14e, it may be continued after the formation of these end portions is confirmed. In the illustrated form, since the wire 32 is generally curved and bonded, the larger the removal amount in the thickness direction of the resin layer 16, the more the p-side second end 12e and the n-side second end 14e. Each position is closer to the p-side first end 12d and the n-side first end 14d in plan view.

  Subsequently, as shown in FIG. 8F, the p-side second external connection electrode 12b electrically connected to the p-side second end 12e and the n-side second end 14e are electrically connected. Step (f) of forming the n-side second external connection electrode 14b to be performed is performed. The p-side second external connection electrode 12b and the n-side second external connection electrode 14b have the p-side second end portion 12e and the n-side second end portion 14e exposed from the resin layer 16 as marks of formation positions. While being confirmed, a conductive material is formed on these end portions. The p-side second external connection electrode 12b and the n-side second external connection electrode 14b may be formed, for example, by vapor deposition, plating, sputtering, or the like.

In an example of the method for performing the step (f), a metal thin film is formed on the entire upper surface of the resin layer 16, and the p-side second external connection electrode 12b and the n-side second external connection electrode 14b are formed by photolithography. A resist pattern is formed in a portion to be formed. Thereafter, the metal thin film is etched to form the p-side second external connection electrode 12b and the n-side second external connection electrode 14b at desired positions.
In another example, a resist pattern is formed by photolithography on a portion of the upper surface of the resin layer 16 where the p-side second external connection electrode 12b and the n-side second external connection electrode 14b are not formed. A metal thin film is formed on the entire surface by vapor deposition or the like. Thereafter, the resist pattern and the metal thin film formed thereon are removed by lift-off to form the p-side second external connection electrode 12b and the n-side second external connection electrode 14b at desired positions.

  The p-side second external connection electrode 12b and the n-side second external connection electrode 14b have the same size as the p-side first external connection electrode 12a and the n-side first external connection electrode 14a, respectively, and It is preferable to form them so as to overlap with each other in plan view. When the resin layer 16 contains a filler that imparts light shielding properties, it is difficult to visually confirm the positions of the first external connection electrode 12a and the n-side first external connection electrode 14a. Therefore, for example, by providing an alignment mark in a place where the resin layer 16 is not formed, specifically, on the outer periphery of the substrate 30, the positions of the p-side second external connection electrode 12b and the n-side second external connection electrode 14b It is preferable to perform the combination.

  In the illustrated form, the p-side second end 12e is positioned closer to the semiconductor stacked body 10 than the p-side first end 12d in plan view, and the n-side second end 14e is the n-side first. It is located closer to the semiconductor laminate 10 than the end 14d. Thereby, even if the positions of the p-side second external connection electrode 12b and the n-side second external connection electrode 14b are shifted inward in a plan view, the allowable range for the shift is large. In that respect, according to the manufacturing method of the form shown in figure, the cost and time required for position adjustment can be reduced.

  In the illustrated form, in the adjacent light emitting device (strictly, the region to be singulated), the p-side second external connection electrode 12b of one light-emitting device and the n-side second electrode of the other light-emitting device. A gap is formed between the external connection electrode 14b and the boundary of the light emitting device 100 is clarified. In a modification, the p-side second external connection electrode 12b and the n-side second external connection electrode 14b may be formed integrally and separated into two electrodes by cutting.

  Next, as shown in FIG. 8G, the substrate 30 is peeled off to expose the other main surface of the semiconductor stacked body 10, the p-side first external connection electrode 12a, and the n-side first external connection electrode 14a. Step (g) is carried out. The peeling of the substrate 30 may be performed by, for example, a laser lift-off method. By peeling off the substrate 30, the light extraction surface 10c of the light emitting device 100 is exposed in the first embodiment of the present invention.

  Subsequently, a sealing member may be formed on the exposed main surface of the semiconductor stacked body 10 as necessary. The sealing member can be formed by, for example, a spray method, a casting method, a potting method, or the like. Specifically, spray coating is simple and preferable. Or you may join the sealing member shape | molded previously to the desired magnitude | size to the surface of the semiconductor laminated body 10. FIG.

  Next, the resin layer 16 in the thickness direction is cut to be separated into pieces for each light emitting device 100. Thereby, the light emitting device 100 as shown in FIG. 8H can be obtained. As a method for cutting the resin layer 16, for example, dicing is performed.

  As the second embodiment, the manufacturing method of the light emitting device of the present invention in the case where the p-side conductive member and the n-side conductive member are wires has been described. As described in relation to the first embodiment, the p-side conductive member The n-side conductive member may be a columnar body formed by plating. Such a conductive member can be formed by performing plating in the step (c). Even when the conductive member is formed by plating, one end of the conductive member is located above the main surface of the semiconductor stacked body (the main surface on which the p-side pad electrode and the n-side pad electrode are formed). The resin layer is formed in such a thickness that covers the conductive member and embeds the conductive member in the resin layer.

  Alternatively, in the case where the p-side conductive member 12c and the n-side conductive member 14c are linear or crank-shaped wires, the conductive member is, for example, a bonding machine, and a nozzle for supplying the wire is arranged along a desired wire shape. It may be formed by moving and separating the resulting wire of the desired shape from the nozzle (FIG. 9 (a)). When forming a crank-shaped bent portion (FIG. 9B), the nozzle is moved in a direction opposite to the direction in which the wire is desired to be bent, the crease is made in the wire, and then the nozzle is bent. The bent portion can be formed by moving in the desired direction.

  As mentioned above, although embodiment of this invention was described. The present invention is not limited to these embodiments, and various modifications can be made.

  The light emitting device of the present invention can be used as a light source in lighting, display, optical communication, OA equipment, etc. as a side view type. However, the application of the present invention is not limited to these.

100 light-emitting device 10 light-emitting device 12 p-side conductor 12a p-side first external connection electrode 12b p-side second external connection electrode 12c p-side conductive member 12d p-side first end 12e, 12e ′ p-side second end Part 12f p-side semiconductor connection part 14 n-side conductor 14a n-side first external connection electrode 14b n-side second external connection electrode 14c n-side conductive member 14d n-side first end part 14e n-side second end part 14f n-side semiconductor connection portion 16 resin layer 20 surface to which light emitting device is attached 22 adhesive member 24 wiring or pad electrode 30 substrate 32 wire

Claims (11)

a semiconductor laminate having a p-type semiconductor layer and an n-type semiconductor layer;
A p-side conductor electrically connected to the p-type semiconductor layer on one main surface side of the semiconductor laminate;
An n-side conductor electrically connected to the n-type semiconductor layer on one main surface side of the semiconductor laminate;
A resin layer covering one main surface side and side surface side of the semiconductor laminate,
The resin layer has an upper surface positioned on one main surface side of the semiconductor stacked body and a lower surface positioned on the other main surface side of the semiconductor stacked body, and the other surface of the semiconductor stacked body on the lower surface The main surface of is exposed,
The p-side conductor includes a p-side external connection electrode provided on each of an upper surface and a lower surface of the resin layer, and a p-side conductive member that is located in the resin layer and connects the p-side external connection electrode to each other. Have
The n-side conductor includes an n-side external connection electrode provided on each of an upper surface and a lower surface of the resin layer, and an n-side conductive member that is located in the resin layer and connects the n-side external connection electrode to each other. Have
In plan view, both the p-side external connection electrode and the n-side external connection electrode are partly outside the semiconductor stacked body. The p-side external connection electrode has a p-side first external connection electrode provided on the lower surface of the resin layer, and a p-side second external connection electrode provided on the upper surface of the resin layer,
The n-side external connection electrode has an n-side first external connection electrode provided on the lower surface of the resin layer, and an n-side second external connection electrode provided on the upper surface of the resin layer,
The p-side first external connection electrode and the p-side second external connection electrode, and the n-side first external connection electrode and the n-side second external connection electrode have the same size and shape. The light-emitting device according to claim 1.   The other main surface of the semiconductor stacked body, a lower surface of the p-side first external connection electrode, and a lower surface of the n-side first external connection electrode are located on the same plane. Light emitting device.   The light emitting device according to any one of claims 1 to 3, wherein the resin layer is mounted so that an upper surface and a lower surface of the resin layer are perpendicular to a surface to which the light emitting device is attached.   In plan view, the p-side first external connection electrode and the p-side second external connection electrode overlap, and the n-side first external connection electrode and the n-side second external connection electrode are The light emitting device according to claim 2, wherein the light emitting device is overlapped. The p-side conductive member includes a p-side first end connected to the p-side first external connection electrode, and a p-side second end connected to the p-side second external connection electrode. Have
The n-side conductive member includes an n-side first end connected to the n-side first external connection electrode and an n-side second end connected to the n-side second external connection electrode. Have
In plan view, the p-side second end is located closer to the semiconductor stack than the p-side first end, and the n-side second end is closer to the semiconductor than the n-side first end. The light-emitting device of any one of Claims 2-5 located near a laminated body.   The planar surface view WHEREIN: The other main surface of the said semiconductor laminated body is any one of Claims 2-6 pinched | interposed into the said p side 1st external connection electrode and the said n side 1st external connection electrode. The light emitting device according to item.   The light emitting device according to claim 1, wherein the p-side conductive member and the n-side conductive member are wires. Preparing a substrate;
A semiconductor laminate having a p-type semiconductor layer and an n-type semiconductor layer on the substrate, a p-side pad electrode electrically connected to the p-type semiconductor layer on one main surface side of the semiconductor laminate, and n A step (a) of providing an n-side pad electrode electrically connected to the type semiconductor;
Forming a p-side first external connection electrode electrically connected to the p-side pad electrode and an n-side first external connection electrode electrically connected to the n-side pad electrode on the substrate; Step (b) to perform,
One end is connected to the p-side first external connection electrode, and a part of the p-side conductive member is positioned above one main surface of the semiconductor laminate, and one end is the n-side first A step (c) of forming an n-side conductive member that is connected to one external connection electrode and a part of which is located above one main surface of the semiconductor laminate;
Forming a resin layer covering the semiconductor laminate, the p-side conductive member, and the n-side conductive member;
The step of exposing the other end of the p-side conductive member and the other end of the n-side conductive member from the resin layer by removing the resin layer from one main surface side of the semiconductor laminate ( e) and
A p-side second external connection electrode electrically connected to the other end of the p-side conductive member, and an n-side second external connection electrically connected to the other end of the n-side conductive member An electrode for forming (f),
Peeling the substrate and exposing the other main surface of the semiconductor laminate, the p-side first external connection electrode and the n-side first external connection electrode (g);
A method for manufacturing a light emitting device, comprising:   The method for manufacturing a light emitting device according to claim 9, wherein the p-side conductive member and the n-side conductive member are wires. A method for manufacturing a light emitting device according to claim 10,
The step (c) is a step of integrally connecting the p-side first external connection electrode and the n-side first external connection electrode with a wire,
In the step (e), the resin layer is removed from one main surface side of the semiconductor stacked body to separate the integrally connected wires, and the other of the p-side conductive members made of wires. A method for manufacturing a light-emitting device, which is a step of exposing the other end of the n-side conductive member made of a wire and a wire from the resin layer.

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