JP2015233150A - Adhesive film, dicing/die-bonding film, method for manufacturing semiconductor device, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide: an adhesive film by which a high-quality semiconductor device can be manufactured with good yield; a method for manufacturing a semiconductor device by use of such an adhesive film; and a semiconductor device obtained by the manufacturing method.SOLUTION: An adhesive film for embedding a first semiconductor device fixed on an adherend and fixing a second semiconductor device different from the first semiconductor device to an adherend comprises an inorganic filler. The adhesive film has a tack strength of 0.2 MPa or less with SUS at 40°C, and a melt viscosity of 100-3000 Pa s at 120°C, and comprises an inorganic filler, in which the content of the inorganic filler is 25-80 wt%.

Description

  The present invention relates to an adhesive film, a dicing die bond film, a semiconductor device manufacturing method, and a semiconductor device.

  Conventionally, a silver paste is used for fixing a semiconductor chip to a substrate or an electrode member during the manufacture of a semiconductor device. Such a fixing process is performed by applying a paste adhesive to the semiconductor chip or the lead frame, mounting the semiconductor chip on the substrate via the paste adhesive, and finally curing the paste adhesive layer.

  However, pasty adhesives cause large variations in coating amount, coating shape, etc., making uniforming difficult, or requiring special equipment and a long time for coating. For this reason, a dicing die-bonding film has been proposed in which a semiconductor wafer is bonded and held in a dicing process, and an adhesive film for chip fixing necessary for a mounting process is also provided (see Patent Document 1).

  This type of dicing die-bonding film has a structure in which a die-bonding film (adhesive film) is laminated on the dicing film. The dicing film has a structure in which an adhesive layer is laminated on a support substrate. This dicing die-bonding film is used as follows. That is, after the semiconductor wafer and the adhesive film are diced while being held by the adhesive film, the supporting base is stretched, and the semiconductor chip is peeled off together with the adhesive film, and these are individually collected. Further, the semiconductor chip is bonded and fixed to an adherend such as a BT substrate or a lead frame via an adhesive film. When stacking semiconductor chips in multiple stages, a semiconductor chip with an adhesive film is further bonded and fixed on the semiconductor chip fixed via an adhesive film.

  Incidentally, there is a further demand for higher functionality, thinner thickness, and smaller size of semiconductor devices and their packages. As a measure for this, a three-dimensional mounting technique has been developed in which semiconductor elements are stacked in a plurality of stages in the thickness direction to achieve high density integration of the semiconductor elements.

  As a general three-dimensional mounting method, a procedure is adopted in which a semiconductor element is fixed on an adherend such as a substrate and the semiconductor elements are sequentially stacked on the lowermost semiconductor element. Electrical connection is achieved between the semiconductor elements and between the semiconductor element and the adherend by bonding wires (hereinafter also referred to as “wires”). A film adhesive is widely used for fixing semiconductor elements.

  In such a semiconductor device, a control semiconductor element (hereinafter referred to as “controller”) is provided on the uppermost semiconductor element for the purpose of controlling individual operations of a plurality of semiconductor elements or controlling communication between the semiconductor elements. (Also referred to as Patent Document 2).

JP 2010-074144 A JP 2007-096071 A

  Similarly to the lower semiconductor element, the controller can be electrically connected to the adherend by wires. However, as the number of stacked semiconductor elements increases, the distance between the controller and the adherend increases, and the wires required for electrical connection also increase. As a result, the communication speed of the semiconductor package decreases and wire defects due to external factors (heat, impact, etc.) occur and the quality of the semiconductor package decreases, and the wire bonding process becomes complicated and the yield of semiconductor device manufacturing decreases. Sometimes.

  Therefore, the inventors of the present application have developed an adhesive film for embedding that can fix the controller to the adherend, and can fix other semiconductor elements while embedding the controller, and have filed applications for these. (Not disclosed at the time of filing this application).

  By using such an adhesive film as an adhesive film for a dicing die-bonding film, it is possible to improve the manufacturing efficiency of the semiconductor device and improve the quality of the semiconductor device. However, when a thick adhesive film is used to embed a semiconductor element such as a controller, the adhesive sheet is re-adhered at the cut portion even though dicing is performed, and subsequent pickup cannot be performed well. This may reduce the yield.

  The present invention has been made in view of the above problems, and an object thereof is to provide an adhesive film capable of manufacturing a high-quality semiconductor device with a high yield, a method for manufacturing a semiconductor device using the same, and a semiconductor obtained by the manufacturing method. To provide an apparatus.

  In order to solve the above-mentioned conventional problems, the inventors of the present application have made extensive studies on the characteristics of the adhesive film. As a result, the inventors have found that the object can be achieved by adopting the following configuration, and have completed the present invention.

That is, the present invention embeds a first semiconductor element fixed on an adherend and an adhesive film for fixing a second semiconductor element different from the first semiconductor element to the adherend (hereinafter, Also called "embedded adhesive film"),
The tack strength at 40 ° C. against SUS is 0.2 MPa or less.

  The adhesive film has a tack strength at 40 ° C. of SUS of 0.2 MPa or less. Therefore, even when used as an adhesive film for dicing and die-bonding films, re-adhesion of the adhesive film after dicing hardly occurs, and subsequent pickup is good. Can be done. Further, since the first semiconductor element on the adherend can be embedded, the influence of external factors can be reduced while maintaining the communication speed between the adherend and the first semiconductor element, and a high-quality semiconductor The apparatus can be manufactured with a high yield. In addition, the measuring method of tack strength is based on description of an Example.

  The melt viscosity at 120 ° C. of the adhesive film is preferably 100 Pa · s to 3000 Pa · s. Thereby, when the second semiconductor element is fixed to the adherend by the adhesive film, the first semiconductor element can be more easily embedded in the adhesive film. In addition, the measuring method of melt viscosity is based on description of an Example.

  The storage elastic modulus at 25 ° C. of the adhesive film before thermosetting is preferably 10 MPa or more and 10,000 MPa or less. Thereby, moderate hardness can be provided to an adhesive film and the re-adhesion after dicing can be prevented more efficiently. In addition, the measuring method of a storage elastic modulus is based on description of an Example.

  The adhesive film contains an inorganic filler, and the content of the inorganic filler is preferably 25 to 80% by weight. When the adhesive film contains a predetermined amount of the inorganic filler, hardness and low water absorption effective for preventing re-adhesion at a higher level can be imparted to the adhesive film.

In the present invention, a dicing film having a substrate and an adhesive layer formed on the substrate,
A dicing die-bonding film including the adhesive film laminated on the pressure-sensitive adhesive layer is also included.

  Since the dicing die-bonding film of the present invention includes the adhesive film, a high-quality semiconductor device can be manufactured with a high yield.

In the present invention,
An adherend preparation step for preparing an adherend to which the first semiconductor element is fixed;
A bonding process of bonding the adhesive film of the dicing die-bonding film and the semiconductor wafer;
A dicing step of dicing the semiconductor wafer and the adhesive film to form a second semiconductor element;
A pickup step of picking up the second semiconductor element together with the adhesive film; and an adhesive film picked up together with the second semiconductor element while embedding the first semiconductor element fixed to the adherend, A method for manufacturing a semiconductor device including a fixing step of fixing an element to the adherend is also included.

  In the manufacturing method of the present invention, since the semiconductor device is manufactured using the dicing die-bonding film, it is possible to perform good pickup from dicing and to manufacture the semiconductor device with high production efficiency. In addition, since the first semiconductor element such as the controller can be fixed on the adherend by the adhesive film, it is possible to shorten the wires necessary for electrical connection, thereby reducing the communication speed of the semiconductor package. Can be prevented, and a high-quality semiconductor device in which the occurrence of wire defects due to external factors is reduced can be manufactured. Furthermore, in the manufacturing method, since the first semiconductor element can be embedded on the adherend by using the adhesive film, wire bonding between the first semiconductor element and the adherend becomes easy. Thus, the manufacturing yield of the semiconductor device can be improved.

The manufacturing method, the adhesive film, the first has a thickness T greater thickness T than the _first semiconductor device, wherein the adherend and the first semiconductor element is connected wire bonding, and the thickness and the difference of the thickness of _{T 1} and T is 40μm or more 260μm or less. Alternatively, the adhesive film has a thickness T ₁ is thicker than the thickness T of the first semiconductor element, the and the adherend and the first semiconductor element is flip-chip connected, and the said thickness T and the difference between the thickness _{T 1} is is 10μm or more 200μm or less. The first semiconductor element can be suitably embedded according to the connection mode of the first semiconductor element with the adherend.

  The present invention also includes a semiconductor device obtained by the method for manufacturing the semiconductor device.

It is sectional drawing which shows typically the dicing die-bonding film which concerns on one Embodiment of this invention. It is sectional drawing which shows typically the dicing die-bonding film which concerns on other embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on another one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on another one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on another one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on another one Embodiment of this invention.

[First Embodiment]
A first embodiment which is an embodiment of the present invention will be described below with reference to the drawings. However, in some or all of the drawings, parts unnecessary for the description are omitted, and there are parts shown enlarged or reduced for easy explanation. In the first embodiment, as shown in FIG. 1, an example of a dicing die-bonding film in which an adhesive film 22 is laminated on a dicing film 5 in which a pressure-sensitive adhesive layer 3 is laminated on a substrate 4 will be described below. Explained. In the present embodiment, a mode in which electrical connection between the adherend and the first semiconductor element is achieved by wire bonding connection will be described.

<Adhesive film>
The tack strength at 40 ° C. with respect to SUS of the adhesive film 22 is 0.2 MPa or less, preferably 0.1 MPa or less, and more preferably 0.05 MPa or less. The lower limit of the tack strength is not particularly limited, but is preferably 0.001 MPa or more, and more preferably 0.005 MPa or more. By setting the tack strength of the adhesive film within the above range, the semiconductor wafer can be satisfactorily fixed during dicing, and re-adhesion of the adhesive film after dicing can be prevented.

  The configuration of the adhesive film is not particularly limited, and examples thereof include an adhesive film consisting of only a single layer of the adhesive film, and an adhesive film having a multilayer structure in which an adhesive film is formed on one or both sides of the core material. Here, as the core material, a film (for example, polyimide film, polyester film, polyethylene terephthalate film, polyethylene naphthalate film, polycarbonate film, etc.), a resin substrate reinforced with glass fiber or plastic non-woven fiber, a silicon substrate, A glass substrate etc. are mentioned. Moreover, it can also be used as an integrated film in which the adhesive film and the dicing sheet are integrated.

  The adhesive film is a layer having an adhesive function, and examples of the constituent material thereof include a combination of a thermoplastic resin and a thermosetting resin. A thermoplastic resin alone can also be used.

(Thermoplastic resin)
Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polyptadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6 nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples include polymers as components. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, an amyl group, an isoamyl group, a hexyl group, a heptyl group, a cyclohexyl group, and 2-ethylhexyl. Group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, or eicosyl group.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

(Thermosetting resin)
Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. , Biphenyl type, naphthalene type, fluorene type, phenol novolak type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate Type or glycidylamine type epoxy resin is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin. For example, a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a novolac type phenol resin such as a nonylphenol novolac resin, and a resol Examples thereof include polyphenol styrene such as type phenol resin and polyparaoxy styrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  In addition, in this embodiment, the adhesive film containing an epoxy resin, a phenol resin, and an acrylic resin is especially preferable. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured. In this case, the mixing ratio of the epoxy resin and the phenol resin is 10 to 700 parts by weight with respect to 100 parts by weight of the acrylic resin component.

(Crosslinking agent)
Since the adhesive film of this embodiment is crosslinked to some extent in advance, it is preferable to add a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer as a crosslinking agent. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  A conventionally well-known thing can be employ | adopted as said crosslinking agent. In particular, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it contain other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

(Inorganic filler)
Moreover, an inorganic filler can be suitably mix | blended with the adhesive film of this embodiment according to the use. The blending of the inorganic filler makes it possible to impart conductivity, improve thermal conductivity, adjust the elastic modulus, and the like. Examples of the inorganic filler include ceramics such as silica, clay, gypsum, calcium carbonate, barium sulfate, alumina oxide, beryllium oxide, silicon carbide, and silicon nitride, aluminum, copper, silver, gold, nickel, chromium, and tin. And various inorganic powders made of metals such as zinc, palladium and solder, alloys, and other carbons. These can be used alone or in combination of two or more. Among these, silica, particularly a melting strength is preferably used. Moreover, generation | occurrence | production of static electricity can be suppressed by adding the electroconductive fine particles which consist of aluminum, copper, silver, gold | metal | money, nickel, chromium, tin, zinc etc., and setting it as a conductive adhesive film. In addition, it is preferable that the average particle diameter of an inorganic filler exists in the range of 0.1-80 micrometers.

  The content of the inorganic filler is preferably set to 25 to 80% by weight, more preferably 25 to 70% by weight, based on the total weight of components (excluding the solvent) constituting the adhesive film.

(Thermosetting catalyst)
A thermosetting catalyst may be used as a constituent material of the adhesive film. The content is preferably 0.01 to 1 part by weight and more preferably 0.05 to 0.5 part by weight with respect to 100 parts by weight of the organic resin component. By setting the content to be equal to or more than the above lower limit, epoxy groups that have not been reacted at the time of die bonding can be polymerized in a subsequent step, and the unreacted epoxy groups can be reduced or eliminated. As a result, the semiconductor element can be bonded and fixed on the adherend to manufacture a semiconductor device without peeling. On the other hand, by making the blending ratio not more than the above upper limit, it is possible to prevent the occurrence of curing inhibition.

  The thermosetting catalyst is not particularly limited, and examples thereof include imidazole compounds, triphenylphosphine compounds, amine compounds, triphenylborane compounds, and trihalogenborane compounds. These can be used alone or in combination of two or more.

  Examples of the imidazole compound include 2-methylimidazole (trade name; 2MZ), 2-undecylimidazole (trade name; C11Z), 2-heptadecylimidazole (trade name; C17Z), and 1-2-dimethylimidazole (product). Name: 1.2 DMZ), 2-ethyl-4-methylimidazole (trade name; 2E4MZ), 2-phenylimidazole (trade name; 2PZ), 2-phenyl-4-methylimidazole (trade name; 2P4MZ), 1- Benzyl-2-methylimidazole (trade name; 1B2MZ), 1-benzyl-2-phenylimidazole (trade name; 1B2PZ), 1-cyanoethyl-2-methylimidazole (trade name; 2MZ-CN), 1-cyanoethyl-2 -Undecylimidazole (trade name: C11Z-CN), 1-cyanoethyl- 2-phenylimidazolium trimellitate (trade name; 2PZCNS-PW), 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine (trade name; 2MZ-A) ), 2,4-diamino-6- [2'-undecylimidazolyl- (1 ')]-ethyl-s-triazine (trade name; C11Z-A), 2,4-diamino-6- [2'- Ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine (trade name; 2E4MZ-A), 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl -S-triazine isocyanuric acid adduct (trade name; 2MA-OK), 2-phenyl-4,5-dihydroxymethylimidazole (trade name; 2PHZ-PW), 2-phenyl-4-methyl-5-hydro Shi-methylimidazole (trade name; 2P4MHZ-PW), and the like (all made by Shikoku Kasei Co., Ltd.).

  The triphenylphosphine compound is not particularly limited, and examples thereof include triorganophosphines such as triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, and diphenyltolylphosphine. Fin, tetraphenylphosphonium bromide (trade name; TPP-PB), methyltriphenylphosphonium (trade name; TPP-MB), methyltriphenylphosphonium chloride (trade name; TPP-MC), methoxymethyltriphenylphosphonium (trade name) ; TPP-MOC), benzyltriphenylphosphonium chloride (trade name; TPP-ZC) and the like (all manufactured by Hokuko Chemical Co., Ltd.). The triphenylphosphine compound is preferably substantially insoluble in the epoxy resin. It can suppress that thermosetting progresses too much that it is insoluble with respect to an epoxy resin. Examples of the thermosetting catalyst having a triphenylphosphine structure and substantially insoluble in the epoxy resin include methyltriphenylphosphonium (trade name: TPP-MB). The “insoluble” means that the thermosetting catalyst composed of a triphenylphosphine compound is insoluble in a solvent composed of an epoxy resin, and more specifically, a temperature range of 10 to 40 ° C. It means that 10% by weight or more does not dissolve.

  The triphenylborane compound is not particularly limited, and examples thereof include tri (p-methylphenyl) phosphine. The triphenylborane compound further includes those having a triphenylphosphine structure. The compound having the triphenylphosphine structure and the triphenylborane structure is not particularly limited. For example, tetraphenylphosphonium tetraphenylborate (trade name; TPP-K), tetraphenylphosphonium tetra-p-triborate (trade name; (TPP-MK), benzyltriphenylphosphonium tetraphenylborate (trade name; TPP-ZK), triphenylphosphine triphenylborane (trade name; TPP-S), and the like (all manufactured by Hokuko Chemical Co., Ltd.).

  The amino compound is not particularly limited, and examples thereof include monoethanolamine trifluoroborate (manufactured by Stella Chemifa Corporation), dicyandiamide (manufactured by Nacalai Tesque Corporation), and the like.

  The trihalogen borane compound is not particularly limited, and examples thereof include trichloroborane.

(Other additives)
In addition to the said inorganic filler, another additive can be suitably mix | blended with the adhesive film of this embodiment as needed. Examples of other additives include a flame retardant, a silane coupling agent, and an ion trap agent.

  Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more.

  Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more.

  Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  The melt viscosity at 120 ° C. of the adhesive film is not particularly limited as long as it has the embedding property of the first semiconductor element, but the lower limit is preferably 100 Pa · s or more, more preferably 300 Pa · s or more, and more preferably 500 Pa · s or more. Further preferred. On the other hand, the upper limit of the melt viscosity is preferably 3000 Pa · s or less, more preferably 2000 Pa · s or less, and further preferably 1500 Pa · s or less. Thereby, when the second semiconductor element is fixed to the adherend by the adhesive film, the first semiconductor element can be embedded in the adhesive film more easily.

  The storage elastic modulus at 25 ° C. of the adhesive film before thermosetting is preferably 10 MPa or more and 10,000 MPa or less, more preferably 50 MPa or more and 7000 MPa or less, and further preferably 100 MPa or more and 5000 MPa or less. Thereby, moderate hardness can be provided to an adhesive film and the re-adhesion of the adhesive films after dicing can be prevented more efficiently.

<Dicing film>
As said dicing film, what laminated | stacked the adhesive layer 3 on the base material 4 is mentioned, for example. The adhesive film 22 is laminated on the pressure-sensitive adhesive layer 3. Moreover, as shown in FIG. 2, the structure which formed adhesive film 22 'only in the semiconductor wafer bonding part 22a (refer FIG. 1) may be sufficient.

(Base material)
The base material 4 serves as a strength matrix of the dicing die-bonding films 10 and 10 ′. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfur De, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like. In the case where the pressure-sensitive adhesive layer 3 is of an ultraviolet curable type, the substrate 4 is preferably one having transparency to ultraviolet rays.

  Examples of the material of the base material 4 include polymers such as a crosslinked body of the above resin. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet imparted with heat shrinkability by stretching or the like, the adhesive area between the pressure-sensitive adhesive layer 3 and the adhesive film 22 is reduced by thermally shrinking the base material 4 after dicing, and the semiconductor chip can be recovered. Simplification can be achieved.

  The surface of the substrate 4 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  As the base material 4, the same kind or different kinds can be appropriately selected and used, and if necessary, a blend of several kinds can be used. The base material 4 is provided with a vapor-deposited layer of a conductive material having a thickness of about 30 to 500 mm made of a metal, an alloy, an oxide thereof, or the like on the base material 1 in order to impart an antistatic ability. be able to. The substrate 4 may be a single layer or a multilayer of two or more types.

  The thickness of the substrate 4 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 μm.

  In addition, various additives (for example, a colorant, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, a flame retardant, etc.) are added to the substrate 4 as long as the effects of the present invention are not impaired. May be included.

(Adhesive layer)
The pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 3 is not particularly limited as long as the adhesive film 3 can be controlled to be peelable. For example, a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be used. As the pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive having an acrylic polymer as a base polymer from the viewpoint of cleanability of an electronic component that is difficult to contaminate semiconductor wafers, glass, etc., with an organic solvent such as ultrapure water or alcohol. Is preferred.

  Examples of the acrylic polymer include those using an acrylic ester as a main monomer component. Examples of the acrylic ester include (meth) acrylic acid alkyl ester (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer includes units corresponding to the other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance, and the like. You may go out. Examples of such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; The Sulfonic acid groups such as lensulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Containing monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) Examples include acrylates. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  Moreover, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive. Specific examples of the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent is added and reacted. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive. Generally, about 10 parts by weight or less, and further 0.1 to 10 parts by weight is preferably blended with respect to 100 parts by weight of the base polymer. Furthermore, additives such as various conventionally known tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive, if necessary, in addition to the above components.

  The pressure-sensitive adhesive layer 3 can be formed of a radiation curable pressure-sensitive adhesive. A radiation-curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation with radiation such as ultraviolet rays. For example, by irradiating only the part 3a of the pressure-sensitive adhesive layer 3 shown in FIG. 2, a difference in adhesive strength with the part 3b can be provided.

  Further, by curing the radiation curable pressure-sensitive adhesive layer 3 in accordance with the adhesive film 22 ′, it is possible to easily form the portion 3 a where the adhesive strength is remarkably reduced. Since the adhesive film 22 ′ is attached to the portion 3 a that has been cured and has reduced adhesive strength, the interface between the portion 3 a and the adhesive film 22 ′ has a property of easily peeling off during pick-up. On the other hand, the part which is not irradiated with radiation has sufficient adhesive force, and forms the part 3b.

  As described above, in the pressure-sensitive adhesive layer 3 of the dicing die-bonding film 10 shown in FIG. 1, the portion 3 b formed of the uncured radiation-curing pressure-sensitive adhesive sticks to the adhesive film 22 and retains force when dicing. Can be secured. Thus, the radiation curable pressure-sensitive adhesive can support the adhesive film 22 for fixing the semiconductor chip to an adherend such as a substrate with a good balance of adhesion and peeling. In the pressure-sensitive adhesive layer 3 of the dicing die-bonding film 10 ′ shown in FIG. 2, the portion 3 b can fix the wafer ring.

  As the radiation-curable pressure-sensitive adhesive, those having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. Examples of the radiation curable pressure-sensitive adhesive include additive-type radiation curable pressure-sensitive adhesives in which radiation-curable monomer components and oligomer components are blended with general pressure-sensitive pressure-sensitive adhesives such as the above-mentioned acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a weight average molecular weight in the range of about 100 to 30000 are suitable. The compounding amount of the radiation curable monomer component or oligomer component can be appropriately determined in such an amount that the adhesive force of the pressure-sensitive adhesive layer can be reduced depending on the type of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation-curable adhesive described above, the radiation-curable adhesive has a carbon-carbon double bond in the polymer side chain, main chain, or main chain terminal as a base polymer. Intrinsic radiation curable adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so they are stable without the oligomer components, etc. moving through the adhesive over time. This is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, an acrylic polymer having a basic skeleton is preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, it is easy to design a molecule by introducing a carbon-carbon double bond into a polymer side chain. . For example, after a monomer having a functional group is copolymerized in advance with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation-curable carbon-carbon double bond. Examples of the method include condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. In addition, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the above preferred combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. As the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the internal radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer is not deteriorated. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive preferably contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfo D Aromatic sulfonyl chloride compounds such as luchloride; photoactive oxime compounds such as 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  When the pressure-sensitive adhesive layer 3 is formed of a radiation curable pressure-sensitive adhesive, it is preferable that a part of the pressure-sensitive adhesive layer 3 is irradiated with radiation so that the adhesive strength of the portion 3a <the adhesive strength of the portion 3b. In the dicing die-bonding film of FIG. 2, for example, the adhesive strength of the portion 3a <the adhesive strength of the portion 3b in relation to the SUS304 plate (# 2000 polishing) as the adherend.

  Examples of the method for forming the portion 3a on the pressure-sensitive adhesive layer 3 include a method in which after the radiation-curable pressure-sensitive adhesive layer 3 is formed on the substrate 4, the portion 3a is partially irradiated with radiation to be cured. . The partial radiation irradiation can be performed through a photomask in which a pattern corresponding to the portion 3b other than the portion 3a of the pressure-sensitive adhesive layer 3 corresponding to the semiconductor wafer pasting portion 22a is formed. Moreover, the method etc. of irradiating and hardening | curing an ultraviolet-ray spotly are mentioned. The radiation curable pressure-sensitive adhesive layer 3 can be formed by transferring what is provided on the separator onto the substrate 4. Partial radiation curing can also be performed on the radiation curable pressure-sensitive adhesive layer 3 provided on the separator.

  Further, when the pressure-sensitive adhesive layer 3 is formed of a radiation curable pressure-sensitive adhesive, all or part of the portion other than the portion 3a corresponding to the semiconductor wafer pasting portion 22a on at least one side of the substrate 4 is shielded from light. After forming the radiation curable pressure-sensitive adhesive layer 3 on this, the portion 3a corresponding to the semiconductor wafer pasting portion 22a is cured by irradiation with radiation to form the portion 3a having reduced adhesive strength. be able to. As a light shielding material, what can become a photomask on a support film can be prepared by printing, vapor deposition, or the like. According to this manufacturing method, the dicing die-bonding film 10 of the present invention can be manufactured efficiently.

  In addition, when curing inhibition by oxygen occurs during irradiation, it is desirable to block oxygen (air) from the surface of the radiation-curing pressure-sensitive adhesive layer 3 by some method. For example, a method of covering the surface of the pressure-sensitive adhesive layer 3 with a separator, a method of irradiating radiation such as ultraviolet rays in a nitrogen gas atmosphere, and the like can be mentioned.

  The thickness of the pressure-sensitive adhesive layer 3 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the adhesive layer. Preferably it is 2-30 micrometers, More preferably, it is 5-25 micrometers.

  The pressure-sensitive adhesive layer 3 has various additives (for example, a colorant, a thickener, a bulking agent, a filler, a tackifier, a plasticizer, an anti-aging agent, and the like as long as the effects of the present invention are not impaired. Antioxidants, surfactants, crosslinking agents, etc.) may be included.

(Manufacturing method of adhesive film)
The adhesive film according to the present embodiment is produced, for example, as follows. First, an adhesive composition for forming an adhesive film is prepared. The preparation method is not particularly limited. For example, the thermosetting resin, the thermoplastic resin, or other additives described in the section of the adhesive film are put into a container and dissolved in an organic solvent so as to be uniform. It can be obtained as an adhesive composition solution by stirring.

  The organic solvent is not particularly limited as long as it can uniformly dissolve, knead or disperse the components constituting the adhesive film, and conventionally known ones can be used. Examples of such a solvent include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like. Methyl ethyl ketone, cyclohexanone, and the like are preferably used because they have a high drying rate and can be obtained at low cost.

  The adhesive composition solution prepared as described above is applied on the separator to a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions. As the separator, it is possible to use polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper whose surface is coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate-type release agent. Moreover, it does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 70 to 160 ° C. and the drying time is 1 to 5 minutes. Thereby, the adhesive film which concerns on this embodiment is obtained.

(Manufacturing method of dicing die bond film)
The dicing die-bonding films 10 and 10 ′ can be prepared by, for example, separately preparing a dicing film and an adhesive film, and finally bonding them together. Specifically, it can be produced according to the following procedure.

  First, the base material 4 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, a pressure-sensitive adhesive composition for forming a pressure-sensitive adhesive layer is prepared. Resin, additive, etc. which were demonstrated by the term of the adhesive layer are mix | blended with the adhesive composition. After the prepared pressure-sensitive adhesive composition is applied on the substrate 4 to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinked as necessary) to form the pressure-sensitive adhesive layer 3. . It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the adhesive layer 3 may be formed. Then, the adhesive layer 3 is bonded together with the separator on the base material 4. Thereby, a dicing film provided with the base material 4 and the adhesive layer 3 is produced.

  Subsequently, the separator is peeled off from the dicing film, and the adhesive film and the pressure-sensitive adhesive layer are bonded to each other so as to be a bonding surface. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50 ° C., for example, and more preferably 35 to 45 ° C. Moreover, a linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. Next, the separator on the adhesive film is peeled off to obtain the dicing die bond film according to the present embodiment.

<Method for Manufacturing Semiconductor Device>
In the method for manufacturing a semiconductor device according to the present embodiment, an adherend on which at least one first semiconductor element is mounted (fixed) is prepared in advance through a first fixing step and a first wire bonding step (covered). A first semiconductor element is embedded in the first semiconductor element by an adhesive film that has been subjected to dicing and pick-up, and a second semiconductor element different from the first semiconductor element is embedded in the adherend. Fix it. FIG. 3A to FIG. 3H are cross-sectional views schematically showing one step of the method of manufacturing a semiconductor device according to one embodiment of the present invention.

(First fixing step)
As shown in FIG. 3A, in the first fixing step, at least one first semiconductor element 11 is fixed on the adherend 1. The first semiconductor element 11 is fixed to the adherend 1 via the first adhesive film 21. Although only one first semiconductor element 11 is shown in FIG. 3A, two, three, four, five or more first semiconductor elements 11 are used depending on the specifications of the target semiconductor device. May be fixed to the adherend 1.

(First semiconductor element)
The first semiconductor element 11 is not particularly limited as long as it is an element having a smaller size in plan view than the semiconductor element stacked in the second stage (second semiconductor element 12; see FIG. 3F). For example, the first semiconductor element 11 is a kind of semiconductor element. A certain controller, memory chip, or logic chip can be suitably used. Since the controller controls the operation of each stacked semiconductor element, a large number of wires are generally connected. The communication speed of the semiconductor package is affected by the wire length. In the present embodiment, the first semiconductor element 11 is fixed to the adherend 1 and positioned at the lowermost stage, so that the wire length can be shortened. Even if the number of stacked elements is increased, a decrease in the communication speed of the semiconductor package (semiconductor device) can be suppressed.

  Although the thickness of the 1st semiconductor element 11 is not specifically limited, Usually, there are many cases of 100 micrometers or less. In addition, with the recent thinning of semiconductor packages, the first semiconductor element 11 of 75 μm or less, further 50 μm or less is being used.

(Adherent)
Examples of the adherend 1 include a substrate, a lead frame, and other semiconductor elements. As the substrate, a conventionally known substrate such as a printed wiring board can be used. As the lead frame, a metal lead frame such as a Cu lead frame or a 42 Alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present embodiment is not limited to this, and includes a circuit board that can be used by mounting a semiconductor element and electrically connecting the semiconductor element.

(First adhesive film)
As the first adhesive film 21, the embedding adhesive film may be used, or a conventionally known adhesive film for fixing a semiconductor element may be used. However, when the embedding adhesive film is used, the first adhesive film 21 does not need to embed a semiconductor element, and therefore, the thickness may be reduced from about 5 μm to about 60 μm.

(Fixing method)
As shown in FIG. 3A, the first semiconductor element 11 is die-bonded to the adherend 1 through the first adhesive film 21. As a method of fixing the first semiconductor element 11 on the adherend 1, for example, after laminating the first adhesive film 21 on the adherend 1, the wire bond surface is on the upper side of the first adhesive film 21. The method of laminating | stacking the 1st semiconductor element 11 is mentioned so that it may become. Alternatively, the first semiconductor element 11 with the first adhesive film 21 attached in advance may be disposed on the adherend 1 and laminated.

  Since the first adhesive film 21 is in a semi-cured state, the first adhesive film 21 is thermally cured by performing heat treatment under a predetermined condition after the first adhesive film 21 is placed on the adherend 1. Then, the first semiconductor element 11 is fixed on the adherend 1. The temperature at which the heat treatment is performed is preferably 100 to 200 ° C, more preferably 120 to 180 ° C. The heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours.

(First wire bonding process)
The first wire bonding step is a step of electrically connecting the tip of the terminal portion (for example, inner lead) of the adherend 1 and an electrode pad (not shown) on the first semiconductor element 11 with the bonding wire 31. (See FIG. 3B). As the bonding wire 31, for example, a gold wire, an aluminum wire, a copper wire, or the like is used. The temperature at the time of wire bonding is 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and crimping energy by applying pressure while being heated so as to be within the temperature range.

(Wafer bonding process)
Separately, as shown in FIG. 3C, the semiconductor wafer 2 is pressure-bonded onto the embedding adhesive film 22 in the dicing die-bonding film 10, and this is bonded and held (fixing step). This step is performed while pressing with a pressing means such as a pressure roll.

(Dicing process)
Next, as shown in FIG. 3D, the semiconductor wafer 2 is diced. Thereby, the semiconductor wafer 2 is cut into a predetermined size and separated into individual pieces, and the semiconductor chip 12 is manufactured (dicing step). Dicing is performed according to a conventional method from the circuit surface side of the semiconductor wafer 2, for example. Further, in this step, for example, a cutting method called full cut that cuts up to the dicing film 5 can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer is bonded and fixed by the dicing die-bonding film 10, chip chipping and chip jumping can be suppressed, and damage to the semiconductor wafer 2 can also be suppressed. Moreover, since the embedding adhesive film 22 is used, re-adhesion after dicing can be prevented, and the next pickup process can be performed satisfactorily.

(Pickup process)
As shown in FIG. 3E, the semiconductor chip 12 is picked up together with the embedding adhesive film 22 in order to peel off the semiconductor chip 12 adhered and fixed to the dicing die bond film 10 (pickup step). The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, there is a method in which each semiconductor chip 12 is pushed up by a needle from the base 4 side, and the pushed-up semiconductor chip 12 is picked up by a pickup device.

  Here, when the pressure-sensitive adhesive layer 3 is an ultraviolet curable type, the pickup is performed after the pressure-sensitive adhesive layer 3 is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the adhesive film 22 of the adhesive layer 3 falls, and peeling of the semiconductor chip 12 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. Moreover, as a light source used for ultraviolet irradiation, a high-pressure mercury lamp, a microwave excitation lamp, a chemical lamp, or the like can be used.

(Second fixing step)
In the second fixing step, the first semiconductor element 11 is embedded while the first semiconductor element 11 separately fixed on the adherend 1 is embedded by the embedding adhesive film 22 picked up together with the second semiconductor element 12. A second semiconductor element 12 different from the above is fixed to the adherend 1 (see FIG. 3F). The embedding adhesive film 22 has a thickness T that is thicker than the thickness T ₁ of the first semiconductor element 11. In this embodiment, since the electrical connection between the adherend 1 and the first semiconductor element 11 is achieved by wire bonding connection, the difference between the thickness T and the thickness T ₁ is set to 40 μm or more and 260 μm. The following is preferred. Although the lower limit of the difference between the the thickness T and the thickness T ₁ is preferably at least 40 [mu] m, more preferably at least 50 [mu] m, and even more preferably 60 [mu] m. The upper limit of the difference between the thickness _{T 1} and the thickness T although less preferably 260 .mu.m, more preferably not more than 200 [mu] m, more preferably 150μm or less. As a result, the entire first semiconductor element 11 is embedded in the embedding adhesive film 22 while preventing contact between the first semiconductor element 11 and the second semiconductor element 12 while reducing the thickness of the entire semiconductor device. It is possible to fix the first semiconductor element 11 as a controller onto the adherend 1 (that is, fixing at the lowest stage where the wire length is the shortest).

The thickness T of the embedding adhesive film 22 may be set as appropriate in consideration of the thickness T ₁ and the wire protruding amount of the first semiconductor element 11 so as to be embedded first semiconductor element 11, but the lower limit Is preferably 80 μm or more, more preferably 100 μm or more, and even more preferably 120 μm or more. On the other hand, the upper limit of the thickness T is preferably 300 μm or less, more preferably 200 μm or less, and even more preferably 150 μm or less. By making the adhesive film relatively thick in this way, the thickness of a general controller can be substantially covered, and the embedding of the first semiconductor element 11 in the embedding adhesive film 22 can be easily performed. it can.

(Second semiconductor element)
The second semiconductor element 12 is not particularly limited, and for example, a memory chip that receives operation control of the first semiconductor element 11 as a controller can be used.

(Fixing method)
As a method of fixing the second semiconductor element 12 on the adherend 1, as in the first fixing step, for example, an embedding adhesive film 22 is laminated on the adherend 1 and then this embedding adhesive film. The method of laminating | stacking the 2nd semiconductor element 12 on 22 so that a wire bond surface may become an upper side is mentioned. Alternatively, the second semiconductor element 12 having the embedding adhesive film 22 attached in advance may be disposed on the adherend 1 and laminated.

  In order to facilitate the entry and embedding of the first semiconductor element 11 into the embedding adhesive film 22, a heat treatment may be performed on the embedding adhesive film 22 during die bonding. The heating temperature may be a temperature at which the embedding adhesive film 22 is softened and does not completely thermoset, and is preferably 80 ° C. or higher and 150 ° C. or lower, more preferably 100 ° C. or higher and 130 ° C. or lower. At this time, you may pressurize by 0.1 MPa or more and 1.0 MPa or less.

  Since the embedding adhesive film 22 is in a semi-cured state, after the embedding adhesive film 22 is placed on the adherend 1, the embedding adhesive film 22 is subjected to a heat treatment under a predetermined condition, whereby the embedding adhesive film 22 is The second semiconductor element 12 is fixed on the adherend 1 by thermosetting. The temperature at which the heat treatment is performed is preferably 100 to 200 ° C, more preferably 120 to 180 ° C. The heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours.

  At this time, the shear adhesive force of the adhesive film 22 for embedding after thermosetting to the adherend 1 is preferably 0.1 MPa or more at 25 to 250 ° C., more preferably 0.2 to 10 MPa. . If the shearing adhesive force of the embedding adhesive film 22 is 0.1 MPa or more, the embedding adhesive film 22 and the second semiconductor element 12 or the adherence are applied by ultrasonic vibration or heating in the wire bonding process for the second semiconductor element 12. Generation | occurrence | production of the shear deformation in the adhesion surface with the body 1 can be suppressed. That is, it is possible to suppress the movement of the second semiconductor element 12 due to the ultrasonic vibration during the wire bonding, thereby preventing the success rate of the wire bonding from being lowered.

(Third fixing step)
In the third fixing step, a third semiconductor element 13 of the same kind or different kind from the second semiconductor element is fixed on the second semiconductor element 12 (see FIG. 3G). The third semiconductor element 13 is fixed to the second semiconductor element 12 via the third adhesive film 23.

(Third semiconductor element)
The third semiconductor element 13 may be the same type of memory chip as the second semiconductor element 12 or a different type of memory chip from the second semiconductor element 12. The thickness of the third semiconductor element 13 can also be set as appropriate according to the specifications of the target semiconductor device.

(Third adhesive film)
As the 3rd adhesive film 23, the thing similar to the 1st adhesive film 21 in a 1st fixing process can be used suitably. When the embedding adhesive film 22 is used as the third adhesive film 23, it is not necessary to embed other semiconductor elements, so that the thickness may be reduced from about 5 μm to about 60 μm.

(Fixing method)
As shown in FIG. 3G, the third semiconductor element 13 is die-bonded to the second semiconductor element 12 via the third adhesive film 23. As a method of fixing the third semiconductor element 13 on the second semiconductor element 12, for example, after a third adhesive film 23 is laminated on the second semiconductor element 12, a wire bond surface is formed on the third adhesive film 23. A method of stacking the third semiconductor element 13 so as to be on the upper side is mentioned. Alternatively, the third semiconductor element 13 on which the third adhesive film 23 has been attached in advance may be disposed and stacked on the second semiconductor element 12. However, for wire bonding between the second semiconductor element 12 and the third semiconductor element 13 described later, the third semiconductor element 13 is avoided so as to avoid electrode pads on the wire bond surface (upper surface) of the second semiconductor element 12. May be displaced and fixed with respect to the second semiconductor element 12. In this case, if the third adhesive film 23 is first attached to the upper surface of the second semiconductor element 12, the portion of the third adhesive film 23 that protrudes from the upper surface of the second semiconductor element 12 (so-called overhang portion) is bent. Then, it may adhere to the side surface of the second semiconductor element 12 or the side surface of the embedding adhesive film 22 and may cause an unexpected failure. Therefore, in the third fixing step, it is preferable that the third adhesive film 23 is attached in advance to the third semiconductor element 13 and disposed and laminated on the second semiconductor element 12.

  Since the third adhesive film 23 is also in a semi-cured state, after the third adhesive film 23 is placed on the second semiconductor element 12, the third adhesive film 23 is thermally cured by performing a heat treatment under a predetermined condition. Thus, the third semiconductor element 13 is fixed on the second semiconductor element 12. In consideration of the elastic modulus and process efficiency of the third adhesive film 23, the third semiconductor element 13 can be fixed without performing heat treatment. The temperature at which the heat treatment is performed is preferably 100 to 200 ° C, more preferably 120 to 180 ° C. The heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours.

(Second wire bonding process)
The second wire bonding step is a step of electrically connecting an electrode pad (not shown) on the second semiconductor element 12 and an electrode pad (not shown) on the third semiconductor element 13 with a bonding wire 32 ( (See FIG. 3H). As the wire material and wire bonding conditions, the same materials as those in the first wire bonding step can be preferably used.

(Semiconductor device)
Through the above steps, the semiconductor device 100 in which three semiconductor elements are stacked in multiple stages via a predetermined adhesive film can be manufactured. Furthermore, a semiconductor device in which four or more semiconductor elements are stacked can be manufactured by repeating the same procedure as the third fixing step and the second wire bonding step.

(Sealing process)
After laminating a desired number of semiconductor elements, a sealing step of resin-sealing the entire semiconductor device 100 may be performed. The sealing step is a step of sealing the semiconductor device 100 with a sealing resin (not shown). This step is performed to protect the semiconductor elements and bonding wires mounted on the adherend 1. This step is performed, for example, by molding a sealing resin with a mold. As the sealing resin, for example, an epoxy resin is used. Although the heating temperature at the time of resin sealing is normally performed at 175 ° C. for 60 to 90 seconds, the present embodiment is not limited to this, and can be cured at 165 to 185 ° C. for several minutes, for example. In this step, pressure may be applied during resin sealing. In this case, the pressure to pressurize is preferably 1 to 15 MPa, and more preferably 3 to 10 MPa.

(Post-curing process)
In the present embodiment, a post-curing step of after-curing the sealing resin may be performed after the sealing step. In this step, the sealing resin insufficiently cured in the sealing step is completely cured. Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and heating time is about 0.5 to 8 hours. A semiconductor package can be manufactured through a sealing process or a post-curing process.

[Second Embodiment]
In the first embodiment, the first semiconductor element is fixed to the adherend by an adhesive film, and the electrical connection between the two is achieved by wire bonding. In the second embodiment, the first semiconductor element is provided on the first semiconductor element. The two are fixed and electrically connected by flip-chip connection using the protruding electrodes. Therefore, since the second embodiment is different from the first embodiment only in the fixing mode in the first fixing step, this difference will be mainly described below.

(First fixing step)
In the present embodiment, in the first fixing step, the first semiconductor element 41 is fixed to the adherend 1 by flip chip connection (see FIG. 4A). In the flip-chip connection, so-called face-down mounting is performed in which the circuit surface of the first semiconductor element 41 faces the adherend 1. The first semiconductor element 41 is provided with a plurality of protruding electrodes 43 such as bumps, and the protruding electrodes 43 and electrodes (not shown) on the adherend 1 are connected. An underfill material 44 is filled between the adherend 1 and the first semiconductor element 41 for the purpose of reducing the difference in thermal expansion coefficient between them and protecting the space between them.

  It does not specifically limit as a connection method, It can connect by a conventionally well-known flip chip bonder. For example, the conductive material while the protruding electrodes 43 such as bumps formed on the first semiconductor element 41 are brought into contact with and pressed against a conductive material (solder or the like) attached to the connection pad of the adherend 1. Is melted to ensure electrical continuity between the first semiconductor element 41 and the adherend 1 and to fix the first semiconductor element 41 to the adherend 1 (flip chip bonding). Generally, the heating condition at the time of flip chip connection is 240 to 300 ° C., and the pressurizing condition is 0.5 to 490 N.

  The material for forming bumps as the protruding electrodes 43 is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, and a tin-zinc metal material. And solders (alloys) such as tin-zinc-bismuth metal materials, gold metal materials, copper metal materials, and the like.

  As the underfill material 44, a conventionally known liquid or film-like underfill material can be used.

(Second fixing step)
In the second fixing step, as in the first embodiment, the second semiconductor element 12 different from the first semiconductor element 41 is deposited while the first semiconductor element 41 is embedded by the embedding adhesive film 22. It fixes to the body 1 (refer FIG. 4B). The conditions in this step are the same as those in the second fixing step in the first embodiment.

The embedding adhesive film 22 has a thickness T thicker than the thickness T ₁ of the first semiconductor element 41. In the present embodiment, since the adherend 1 and the first semiconductor element 41 are flip-chip connected, the difference between the thickness T and the thickness T ₁ is preferably 10 μm or more and 200 μm or less. Although the lower limit of the difference between the the thickness T and the thickness T ₁ is preferably at least 10 [mu] m, more preferably at least 20 [mu] m, and even more preferably 30 [mu] m. Although the upper limit is preferably not more than 200μm of difference between the the thickness T and the thickness _{T 1,} more preferably at most 150 [mu] m, more preferably 100μm or less. With such a configuration, the entire semiconductor device is reduced in thickness, and at the same time, the first semiconductor element 41 is entirely embedded in the embedding adhesive film 22 while preventing contact between the first semiconductor element 41 and the second semiconductor element 12. The first semiconductor element 41 as a controller can be fixed on the adherend 1 (that is, the fixing at the lowest stage where the communication path length is the shortest).

The thickness T of the embedding adhesive film 22 may be appropriately set in consideration of the height of the thickness T ₁ and the projecting electrodes of the first semiconductor element 41 so as to be embedded first semiconductor element 41 but, The lower limit is preferably 50 μm or more, more preferably 60 μm or more, and even more preferably 70 μm or more. On the other hand, the upper limit of the thickness T is preferably 250 μm or less, more preferably 200 μm or less, and even more preferably 150 μm or less. By making the embedding adhesive film 22 relatively thick in this manner, the thickness of a general controller can be substantially covered, and the first semiconductor element 41 can be easily embedded in the embedding adhesive film 22. Can be done.

  Subsequently, as in the first embodiment, a third fixing step (see FIG. 4C) for fixing a third semiconductor element 13 of the same type or different type from the second semiconductor element 12 on the second semiconductor element 12, and the second semiconductor Through a second wire bonding step (see FIG. 4D) in which the element 12 and the third semiconductor element 13 are electrically connected by the bonding wire 32, the controller is stacked at the lowest level, and a plurality of semiconductor elements are disposed above the controller. A stacked semiconductor device 200 can be manufactured.

(Other embodiments)
In the first embodiment, the second semiconductor element 12 is manufactured through a dicing process using a dicing die bond film and a pickup process. Further, the first semiconductor element 11 may be similarly produced using a dicing die bond film. In this case, a semiconductor wafer for cutting out the first semiconductor element 11 is separately prepared, and then the first semiconductor element 11 may be fixed to the adherend 1 through the wafer bonding process, the dicing process, and the pickup process. . The third semiconductor element 13 and the semiconductor element stacked on the upper stage can be similarly manufactured.

  When the semiconductor element is three-dimensionally mounted on the adherend, a buffer coat film may be formed on the surface side where the circuit of the semiconductor element is formed. Examples of the buffer coat film include those made of a heat resistant resin such as a silicon nitride film or a polyimide resin.

  In each embodiment, although the aspect which performs a wire bonding process whenever it laminates | stacks the semiconductor element after a 2nd semiconductor element was demonstrated, after laminating | stacking several semiconductor elements, a wire bonding process may be performed collectively. Is possible. In addition, since it embeds with the adhesive film for embedding about the 1st semiconductor element, it cannot be made into the object of collective wire bonding.

  The aspect of flip chip connection is not limited to the connection by the bump as the protruding electrode described in the second embodiment, but the connection by the conductive adhesive composition or the protrusion combining the bump and the conductive adhesive composition. Connection by structure can also be employed. In the present invention, as long as face-down mounting in which the circuit surface of the first semiconductor element is connected facing the adherend is referred to as flip-chip connection regardless of the connection mode such as the protruding electrode and the protruding structure. I will do it. As the conductive adhesive composition, a conventionally known conductive paste obtained by mixing a thermosetting resin such as an epoxy resin with a conductive filler such as gold, silver, or copper can be used. When the conductive adhesive composition is used, after mounting the first semiconductor element on the adherend, the first semiconductor element can be fixed by thermosetting at 80 to 150 ° C. for about 0.5 to 10 hours. it can.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the present invention only to those examples, but are merely illustrative examples, unless otherwise limited.

[Examples 1-8 and Comparative Examples 1-7]
(Preparation of adhesive film)
An acrylic resin, an epoxy resin A, an epoxy resin B, a phenol resin, silica, and a thermosetting catalyst were dissolved in methyl ethyl ketone at a ratio shown in Table 1 to prepare an adhesive composition solution having a concentration of 40 to 50% by weight.

  The adhesive composition solution was applied as a release liner on a release film made of a polyethylene terephthalate film having a thickness of 50 μm and subjected to silicone release treatment, and then dried at 130 ° C. for 2 minutes. An adhesive film having the thickness shown in FIG.

The details of the abbreviations and components in Table 1 below are as follows.
Acrylic resin: SG-700AS manufactured by Nagase ChemteX Corporation
Epoxy resin A: KI-3000 manufactured by Tohto Kasei Co., Ltd.
Epoxy resin B: JER 828 manufactured by Mitsubishi Chemical Corporation
Phenol resin: MEH-7851SS manufactured by Meiwa Kasei Co., Ltd.
Silica: SE-2050MC manufactured by Admatechs Co., Ltd.
Thermosetting catalyst: TPP-K manufactured by Hokuko Chemical Co., Ltd.

(Measurement of tack strength)
About each adhesive film before thermosetting produced in each Example and the comparative example, the tack strength at 40 degreeC with respect to a SUS board (SUS304) was used using the dynamic viscoelasticity test apparatus (TA Instruments Inc. make). It was measured by the compression method. The adhesive film (length 20 mm × width 20 mm) produced in each example or comparative example was installed in the apparatus, and the measurement temperature was 40 ° C., the measurement jig diameter was 8 mmφ, the load was 100 g, the press time was 2 sec, and the test speed was 100 mm / min. The tack strength was measured. The results are shown in Table 1.

(Measurement of melt viscosity)
About each adhesive film before thermosetting produced in each Example and the comparative example, the melt viscosity in 120 degreeC was measured, respectively. That is, it measured by the parallel plate method using the rheometer (the product made from HAAKE, RS-1). A sample of 0.1 g was taken from the adhesive film produced in each example or comparative example, and this was loaded on a plate heated at 120 ° C. in advance. Next, the value 300 seconds after the start of measurement was taken as the melt viscosity. The gap between the plates was 0.1 mm. The results are shown in Table 1 below.

(Measurement of storage modulus)
About each adhesive film before thermosetting produced in each Example and comparative example, the storage elastic modulus in 25 degreeC was measured using the viscoelasticity measuring apparatus (Rheometrics company_made: type | formula: RSA-II). More specifically, the produced adhesive film is cut to make the sample size 30 mm long × 10 mm wide, the measurement sample is set in a film tensile measurement jig, and the frequency is 10.0 Hz in the temperature range of −30 to 280 ° C. The measurement was performed under the conditions of a strain of 0.025% and a heating rate of 10 ° C./min. The results are shown in Table 1.

(Production of dicing film)
As a substrate, a polyethylene terephthalate film (PET film) having a thickness of 50 μm was prepared.

  In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirring device, 86.4 parts of acrylate-2-ethylhexyl acrylate (hereinafter also referred to as “2EHA”), -2-hydroxyethyl acrylate (hereinafter referred to as “2EHA”) 13.6 parts, 0.2 parts of benzoyl peroxide, and 65 parts of toluene were added and polymerized in a nitrogen stream at 61 ° C. for 6 hours to obtain an acrylic polymer A. .

  14.6 parts of 2-methacryloyloxyethyl isocyanate (hereinafter also referred to as “MOI”) is added to the acrylic polymer A, followed by an addition reaction treatment at 50 ° C. for 48 hours in an air stream, and the acrylic polymer A ′. Got.

  Next, with respect to 100 parts of acrylic polymer A ′, 8 parts of a polyisocyanate compound (trade name “Coronate L”, manufactured by Nippon Polyurethane Co., Ltd.) and a photopolymerization initiator (trade name “Irgacure 651”, Ciba Specialty) (Chemicals company make) 5 parts was added, and the adhesive composition solution was obtained.

  The dicing film was obtained by apply | coating and drying the obtained adhesive composition solution on the prepared said base material, and forming a 30-micrometer-thick adhesive layer.

(Production of dicing die bond film)
The adhesive film produced in each Example and Comparative Example was transferred onto the pressure-sensitive adhesive layer of the above-described dicing film to obtain a dicing die-bonding film. The conditions for laminating are as follows.

<Lamination conditions>
Laminator device: Roll laminator Laminating speed: 1mm / min
Lamination pressure: 0.5 MPa
Laminator temperature: Room temperature (23 ° C)

(Manufacture of controller mounting board)
An adhesive film having the composition of Example 1 was produced with a thickness of 10 μm to obtain an adhesive film for a controller chip. This was affixed to a controller chip having a 2 mm square and a thickness of 50 μm under the condition of a temperature of 40 ° C. Furthermore, the semiconductor chip was bonded to the BGA substrate via an adhesive film. The conditions at that time were a temperature of 120 ° C., a pressure of 0.1 MPa, and 1 second. Further, the BGA substrate to which the controller chip was bonded was heat-treated at 130 ° C. for 4 hours with a dryer to thermally cure the adhesive film.

  Subsequently, wire bonding was performed on the controller chip under the following conditions using a wire bonder (Shinkawa Co., Ltd., trade name “UTC-1000”). As a result, a controller mounting board having a controller chip mounted on the BGA board was obtained.

<Wire bonding conditions>
Temp. 175 ° C
Au-wire: 23 μm
S-LEVEL: 50 μm
S-SPEED: 10mm / s
TIME: 15ms
US-POWER: 100
FORCE: 20gf
S-FORCE: 15gf
Wire pitch: 100 μm
Wire loop height: 30 μm

(Fabrication of semiconductor devices)
Separately, using the above-mentioned dicing die-bonding film, after actually dicing the semiconductor wafer in the following manner, a semiconductor device is manufactured through pick-up of the semiconductor chip, and the pick-up performance and embedding Fixability was evaluated.

  The dicing die-bonding films of Examples and Comparative Examples were bonded to the surface opposite to the circuit surface of the single-sided bumped silicon wafer using the adhesive film as the bonding surface. As a silicon wafer with a single-sided bump, the following was used. The bonding conditions are as follows.

<Silicon wafer with single-sided bump>
Silicon wafer thickness: 100 μm
Low dielectric material layer material: SiN film Low dielectric material layer thickness: 0.3 μm
Bump height: 60μm
Bump pitch: 150 μm
Bump material: Solder

<Bonding conditions>
Bonding device: DR-3000II (manufactured by Nitto Seiki Co., Ltd.)
Laminating speed: 0.1 mm / min
Lamination pressure: 0.5 MPa
Laminator temperature: 75 ° C

  After bonding, dicing was performed under the following conditions. The dicing was fully cut so as to obtain a 10 mm square chip size.

<Dicing conditions>
Dicing machine: Product name “DFD-6361” manufactured by Disco Corporation Dicing ring: “2-8-1” (made by Disco Corporation)
Dicing speed: 30mm / sec
Dicing blade:
Z1; "203O-SE 27HCDD" manufactured by DISCO
Z2: “203O-SE 27HCBB” manufactured by Disco Corporation
Dicing blade rotation speed:
Z1; 40,000 rpm
Z2; 45,000 rpm
Cut method: Step cut Wafer chip size: 10.0mm square

Next, the adhesive layer was cured by irradiating ultraviolet rays from the substrate side. For ultraviolet irradiation, an ultraviolet irradiation device (product name: UM810, manufacturer: manufactured by Nitto Seiki Co., Ltd.) was used, and the amount of ultraviolet radiation was 400 mJ / cm ² .

  Then, the laminated body of the adhesive film and the semiconductor chip was picked up by a push-up method using a needle from the base material side of each dicing film. The pickup conditions are as follows.

<Pickup conditions>
Die bond device: Shinkawa Co., Ltd., device name: SPA-300
Number of needles: 9 Needle push-up amount: 350 μm (0.35 mm)
Needle push-up speed: 5 mm / sec Adsorption holding time: 80 ms

(Pickup performance evaluation)
100 stacks were picked up, and when no pickup failure occurred, “◯” was evaluated, and when even one pickup failure occurred, “x” was evaluated. The results are shown in Table 1.

  Subsequently, the semiconductor chip was bonded to the BGA substrate while embedding the controller chip of the controller mounting board with the adhesive film of the picked up laminate. The bonding conditions at that time were 120 ° C., pressure 0.1 MPa, and 2 seconds. Further, the BGA substrate to which the semiconductor chip was bonded was heat-treated at 130 ° C. for 4 hours with a dryer, and the adhesive film was thermally cured to produce a semiconductor device.

(Embedding / fixation evaluation)
The difference between the thickness T (μm) of the adhesive film and the thickness T ₁ (μm) of the controller chip is shown in Table 1 below. Further, the manufactured semiconductor device is cut at a position passing through the center of the controller chip fixing position, and the cut surface is observed using an optical microscope (200 times), and the semiconductor chip is fixed without causing a problem in the controller chip. If the controller chip cannot be embedded, a void of 10% or more is confirmed at the interface between the adhesive film and the substrate, or the thickness of the adhesive film is not uniform. Evaluated as “x”. In the case where the void is an image processing apparatus (trade name “FineSAT FS300III” manufactured by Hitachi Engineering & Service Co., Ltd.) and the adhesive film and the substrate are completely bonded together while embedding the semiconductor chip. It was calculated | required as a ratio (%) of the area which the observed void occupies with respect to the contact area (except for a semiconductor chip area) of the adhesive film and the substrate. The results are shown in Table 1 below.

  According to the dicing die-bonding film provided with the adhesive film according to the example, re-adhesion of the adhesive film after dicing is suppressed, and good pickup performance is exhibited. Moreover, in the semiconductor device produced using the adhesive film according to the example, the embedding of the controller chip and the fixing of the semiconductor chip were performed well. On the other hand, in the dicing die-bonding film provided with the adhesive films of Comparative Examples 1 to 7, the pickup performance was greatly deteriorated due to the re-adhesion of the adhesive film after dicing. Moreover, in the semiconductor device manufactured using the laminated body picked up in Comparative Examples 4 and 5, the controller chip could not be embedded, and voids were confirmed. This is considered to be because the melt viscosity of the adhesive film was too high and the semiconductor chip was not sufficiently embedded. Furthermore, in the semiconductor device produced using the laminated body picked up in Comparative Examples 6 and 7, the thickness of the adhesive film after void or embedding was confirmed. This is presumably because the adhesive film was thin and could not sufficiently fill the gap between the controller chip and the semiconductor chip. In this embodiment, although the electrical connection between the controller chip and the BGA substrate is achieved by wire bonding, it is presumed that the same result can be obtained by fixing by flip chip connection.

DESCRIPTION OF SYMBOLS 1 Adhering body 2 Semiconductor wafer 3 Adhesive layer 4 Base material 5 Dicing film 10 Dicing die-bonding film 11 1st semiconductor element 12 2nd semiconductor element 13 3rd semiconductor element 21 1st adhesive film 22 Adhesive film 23 3rd adhesive film 31, 32 Bonding wire 100, 200 Semiconductor device T Thickness of adhesive film T ₁ Thickness of first semiconductor element

Claims (6)

An adhesive film for embedding the first semiconductor element fixed on the adherend and fixing the second semiconductor element different from the first semiconductor element to the adherend,
The tack strength at 40 ° C. against SUS is 0.2 MPa or less,
The melt viscosity at 120 ° C. is 100 Pa · s or more and 3000 Pa · s or less,
Containing inorganic fillers,
The adhesive film whose content of this inorganic filler is 25 to 80 weight%. A dicing film having a substrate and an adhesive layer formed on the substrate;
A dicing die-bonding film comprising: the adhesive film according to claim 1 laminated on the pressure-sensitive adhesive layer. An adherend preparation step for preparing an adherend to which the first semiconductor element is fixed;
A laminating step for laminating the adhesive film of the dicing die-bonding film according to claim 2 and a semiconductor wafer;
A dicing step of dicing the semiconductor wafer and the adhesive film to form a second semiconductor element;
A pickup step of picking up the second semiconductor element together with the adhesive film; and an adhesive film picked up together with the second semiconductor element while embedding the first semiconductor element fixed to the adherend, A method for manufacturing a semiconductor device, comprising: a fixing step of fixing an element to the adherend. The adhesive film has a thickness T that is greater than a thickness T1 of the first semiconductor element;
The method of manufacturing a semiconductor device according to claim 3, wherein the adherend and the first semiconductor element are connected by wire bonding, and a difference between the thickness T and the thickness T1 is 40 μm or more and 260 μm or less. The adhesive film has a thickness T that is greater than a thickness T1 of the first semiconductor element;
4. The method of manufacturing a semiconductor device according to claim 3, wherein the adherend and the first semiconductor element are flip-chip connected, and a difference between the thickness T and the thickness T <b> 1 is 10 μm or more and 200 μm or less.   The semiconductor device obtained by the manufacturing method of the semiconductor device of any one of Claims 3-5.

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