JP2015230921A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce contamination of a substrate by using an air current for preventing a contaminated atmosphere from spreading.SOLUTION: A substrate processing apparatus 1 comprises: a spin chuck 5 for keeping a substrate W in a horizontal position in a chamber 4; a chemical nozzle 6 for discharging a chemical toward the substrate W; an upper partition plate 39 for partitioning an interior space 42 above the substrate W kept by the spin chuck 5 into an upper space 43 and a lower space 44 below the upper space 43; and a FFU (Fan Filter Unit) 38 for supplying clean air to the upper space 43 from above the upper space 43. On the upper partition plate 39, an annular discharge port 46 which surrounds the substrate in plan view and forms a cylindrical downward current in the lower space 44 by discharging a gas in the upper space 43, and an upper exhaust port 48 which is arranged inside the annular discharge port and sucks air inside the cylindrical downward current upward.

Description

  The present invention relates to a substrate processing apparatus for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

In the manufacturing process of a semiconductor device, a liquid crystal display device, etc., a single-wafer type substrate processing apparatus that processes a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device one by one is used.
The single-wafer type substrate processing apparatus described in Patent Literature 1 includes a spin chuck that horizontally holds and rotates a substrate in a processing chamber, a processing liquid nozzle that supplies a processing liquid to the substrate, and a process that scatters around the substrate. A cylindrical cup that receives liquid, an FFU (fan filter unit) that sends clean air from above the processing chamber to the inside of the processing chamber, and a diffusion plate that divides the inside of the processing chamber up and down above the spin chuck It has. Clean air sent to the inside of the processing chamber by the FFU is discharged downward from a plurality of circulation holes formed at equal intervals throughout the diffusion plate. Thereby, clean air is discharged downward from the entire lower surface of the diffusion plate.

  A single-wafer type substrate processing apparatus described in Patent Document 2 includes a processing space forming body that forms a processing space that covers a wafer held in a substrate holding portion in a chamber, and a substrate that is held in the processing space by the substrate holding portion. And a plurality of treatment liquid nozzles for supplying the treatment liquid to the substrate. The processing space forming body includes a top plate that covers the wafer from above, and a cylindrical cup outer peripheral tube disposed around the wafer. The upper opening of the cup outer cylinder is closed by the top plate. The top plate is movable in the horizontal direction, and the cup outer cylinder is movable in the vertical direction. Each treatment liquid nozzle is supported by a separate nozzle support arm. A plurality of side openings through which a plurality of nozzle support arms can pass are provided on the side surface of the cup outer cylinder.

JP 2010-192686 A JP 2013-89637 A

  In the substrate processing apparatus described in Patent Document 1, when the processing liquid is discharged from the processing liquid nozzle or the processing liquid is scattered from the substrate to the periphery thereof, a contaminated atmosphere containing the processing liquid is generated near the substrate. Further, when the processing liquid collides with the chuck pin or the cup, a contaminated atmosphere is generated near the substrate. Most of the contaminated atmosphere is sent into the cup by the downflow of clean air formed in the chamber and the suction force of the exhaust equipment. However, some contaminated atmospheres may diffuse into the chamber.

  In the substrate processing apparatus described in Patent Document 1, a clean air downflow from the diffusion plate toward the upper surface of the substrate is formed. When the contaminated atmosphere drifting in the chamber moves to the space above the substrate, the contaminated atmosphere is swept toward the substrate by downflow. When a contaminated atmosphere (especially a chemical solution atmosphere containing a chemical solution) flows downward toward the upper surface of the substrate in a state where the upper surface of the substrate is not covered with the processing liquid, the upper surface of the substrate is contaminated by the adhesion of the contaminated atmosphere.

  Moreover, in the substrate processing apparatus described in Patent Document 2, a substrate is disposed in a processing space formed by a processing space forming body including a disk-shaped top plate and a cylindrical cup outer peripheral cylinder. In this state, the processing liquid nozzle is inserted into the side opening of the cup outer peripheral cylinder, and the processing liquid is discharged from the processing liquid nozzle toward the substrate. Therefore, it is considered that the diffusion of the contaminated atmosphere is prevented by the processing space forming body.

  However, in the substrate processing apparatus described in Patent Document 2, since the contaminated atmosphere adheres to the inner surface of the processing space forming body that prevents diffusion of the contaminated atmosphere, the inner surface of the processing space forming body is maintained in order to maintain the cleanliness of the substrate. Need to be cleaned. Furthermore, since the time for moving the top plate horizontally and the time for moving the cup outer peripheral cylinder vertically are required, the time required for processing the substrate increases. Moreover, since it is necessary to provide a space for moving the top plate and the cup outer peripheral cylinder and to provide a mechanism for moving the top plate and the cup outer peripheral cylinder, the substrate processing apparatus is increased in size.

  Accordingly, one of the objects of the present invention is to provide a substrate processing apparatus that can reduce contamination of a substrate by using an air flow that prevents diffusion of a contaminated atmosphere.

  In order to achieve the above object, an invention according to claim 1 is directed to a chamber having an internal space, a substrate holding unit for horizontally holding a substrate in the chamber, and a substrate held by the substrate holding unit. A processing liquid nozzle that discharges the processing liquid, an upper partition plate that divides an internal space above the substrate held by the substrate holding unit into an upper space and a lower space below the upper space, and the upper part A blower unit that supplies gas to the upper space from above the space, surrounds the substrate held by the substrate holding unit in a plan view, and discharges the gas in the upper space to the lower space. An annular discharge port that forms a cylindrical descending airflow, and an exhaust port that is disposed inside the annular discharge port and sucks the gas inside the cylindrical descending airflow upward, It is formed in the partition plate, a substrate processing apparatus.

  According to this configuration, the chamber internal space above the substrate is partitioned into the upper space above the substrate and the lower space below the upper space by the upper partition plate. The gas supplied to the upper space by the blower unit is discharged downward from an annular discharge port formed in the upper partition plate. The gas discharged from the annular discharge port forms a cylindrical descending airflow that flows downward in the lower space in the lower space.

  When the processing liquid is discharged from the processing liquid nozzle or the processing liquid is scattered around the substrate, a contaminated atmosphere containing the processing liquid is generated near the substrate. Since a cylindrical downdraft surrounding the substrate in a plan view is formed in a space above the substrate, this contaminated atmosphere is difficult to diffuse out of the cylindrical downdraft. Even if the contaminated atmosphere moves out of the cylindrical downdraft or the contaminated atmosphere is generated outside the cylindrical downdraft, the contaminated atmosphere hardly enters the cylindrical downdraft. Therefore, the contaminated atmosphere floating in the space outside the cylindrical descending airflow hardly adheres to the substrate.

  The gas inside the cylindrical descending airflow is sucked into the exhaust port of the upper partition plate arranged inside the annular discharge port. Therefore, the contaminated atmosphere drifting in the space inside the cylindrical descending airflow is discharged from the lower space through the exhaust port of the upper partition plate. Furthermore, since the exhaust port of the upper partition plate sucks the gas inside the cylindrical descending airflow upward, the generation of the downward airflow toward the upper surface of the substrate is hindered. Therefore, the contaminated atmosphere drifting in the space inside the cylindrical descending airflow hardly reaches the upper surface of the substrate. Therefore, the contamination of the substrate due to the adhesion of the contaminated atmosphere can be reduced.

  In addition, when using a diffusion preventing member (tangible) for preventing diffusion of the contaminated atmosphere, the contaminated atmosphere adheres to the inner surface of the diffusion preventing member. Therefore, in order to maintain the cleanliness of the substrate, the inner surface of the diffusion preventing member is Need to be cleaned. On the other hand, in the case where the diffusion of the contaminated atmosphere is prevented by the airflow, such cleaning is not necessary. Furthermore, since the time for moving the diffusion preventing member and the mechanism for moving the diffusion preventing member are unnecessary, an increase in the time required for processing the substrate can be suppressed or prevented, and an increase in the size of the chamber can be suppressed or prevented.

The invention according to claim 2 further includes a nozzle moving unit that moves the processing liquid nozzle between the space inside the cylindrical descending airflow and the space outside the cylindrical descending airflow through the cylindrical descending airflow. The substrate processing apparatus according to claim 1, further comprising:
When using a diffusion prevention member for preventing the diffusion of the contaminated atmosphere, it is necessary to provide an opening in the diffusion prevention member for allowing the treatment liquid nozzle to pass therethrough, and processing is performed so that the treatment liquid nozzle does not collide with the diffusion prevention member. It is necessary to move the liquid nozzle. Furthermore, it is necessary to adjust the number of openings according to the number of treatment liquid nozzles. On the other hand, when the diffusion of the contaminated atmosphere is prevented by the airflow, an opening for passing the treatment liquid nozzle is not necessary, and it is not necessary to consider the collision between the treatment liquid nozzle and the diffusion preventing member. Furthermore, it is not necessary to adjust the number of openings according to the number of treatment liquid nozzles.

  According to a third aspect of the present invention, the substrate processing apparatus includes an annular upper end surrounding the substrate held by the substrate holding unit in a plan view, and the upper end is positioned above the substrate. A cylindrical splash guard that catches the processing liquid splashed from the substrate held by the substrate holding unit, and the gas inside the splash guard is sucked downward to bring the gas inside the splash guard out of the chamber. A lower exhaust duct for discharging, wherein the annular discharge port surrounds a substrate held by the substrate holding unit at a position inside the upper end of the splash guard in a plan view. The substrate processing apparatus according to claim 1.

  According to this configuration, the upper end of the splash guard that surrounds the substrate in plan view is disposed above the substrate. The processing liquid splashing from the substrate is received on the inner peripheral surface of the splash guard in this state. The annular discharge port surrounds the substrate at a position inside the upper end of the splash guard in plan view. The gas discharged downward from the annular discharge port passes through the space inside the upper end of the splash guard and forms a cylindrical descending airflow surrounding the substrate.

  The lower exhaust duct sucks the gas in the splash guard downward. The gas discharged from the annular discharge port flows toward the space inside the upper end of the splash guard and is sucked toward the upper end of the splash guard. That is, the suction force by which the lower exhaust duct sucks the gas in the splash guard is added to the cylindrical descending airflow, and a more stable cylindrical descending airflow is formed.

  According to a fourth aspect of the present invention, the substrate processing apparatus is disposed in the chamber so as to be positioned below the substrate held by the substrate holding unit, and gas in the chamber is supplied to the chamber. A lower exhaust duct that discharges outside, and the upper partition plate is disposed outside the annular discharge port, and further includes an outer discharge port that discharges the gas in the upper space downward. It is a substrate processing apparatus as described in any one of Claims 1-3.

  According to this configuration, the outer discharge port that discharges the gas in the upper space downward is formed in the upper partition plate. The outer discharge port is disposed outside an annular discharge port that forms a cylindrical downdraft. Therefore, when the outer discharge port discharges gas, a downward airflow is formed around the cylindrical downward airflow. Further, the lower exhaust duct for discharging the gas in the chamber is arranged below the substrate. Accordingly, a downward airflow that flows downward from a position above the substrate toward the lower exhaust duct is formed in the lower space.

  The contaminated atmosphere floating in the space outside the cylindrical downdraft is swept downward by the gas discharged downward from the outer discharge port. Thereafter, the contaminated atmosphere is sucked toward the lower exhaust duct and discharged into the lower exhaust duct. Therefore, even if the contaminated atmosphere moves out of the cylindrical downdraft or the contaminated atmosphere is generated outside the cylindrical downdraft, the contaminated atmosphere is efficiently discharged out of the chamber through the lower exhaust duct. Is done. Therefore, it is possible to suppress or prevent the contaminated atmosphere floating in the space outside the cylindrical downdraft from adhering to the substrate.

The invention according to claim 5 supplies the outer discharge port and the annular discharge port so that the velocity of the gas discharged from the outer discharge port is smaller than the velocity of the gas discharged from the annular discharge port. The substrate processing apparatus according to claim 4, further comprising a flow rate adjusting unit that adjusts a flow rate of the gas to be generated.
According to this configuration, the flow rate adjustment unit adjusts the speed of the gas discharged from the outer discharge port and the speed of the gas discharged from the annular discharge port. If the velocity of the gas discharged from the outer discharge port is too larger than the velocity of the gas discharged from the annular discharge port, a large turbulence may occur in the cylindrical descending airflow. The speed of the gas discharged from the outer discharge port is smaller than the speed of the gas discharged from the annular discharge port. Therefore, the disturbance of the cylindrical descending airflow can be suppressed or prevented.

  The invention according to claim 6, the flow rate adjustment unit includes a cylindrical member that surrounds the annular discharge port at a position inside the outer discharge port in a plan view, and is disposed in the upper space, The chamber includes an upper wall disposed at a height between the blower unit and the upper partition plate, is disposed above a space inside the cylindrical member, and is sent from the blower unit. An air supply port for supplying gas to a space inside the tubular member is formed in the upper wall of the chamber, and the tubular member is formed from the space inside the tubular member. A gas flow path through which a gas flowing in an outer space passes is formed, and a height of the gas flow path is smaller than a height from an upper surface of the upper partition plate to a lower surface of the upper wall. 5. The substrate processing apparatus according to 5.

  According to this configuration, the upper space is partitioned by the cylindrical member. The upper wall of the chamber forms a blower port that supplies the gas sent from the blower unit to the space inside the cylindrical member. The annular discharge port is disposed inside the cylindrical member. Therefore, the annular discharge port discharges the gas supplied from the blower unit to the space inside the cylindrical member downward. Further, the outer discharge port is arranged outside the cylindrical member. The outer discharge port discharges the gas moved from the space inside the tubular member to the space outside the tubular member through the gas flow path formed by the tubular member.

  The height of the gas flow path formed by the cylindrical member is smaller than the height from the upper surface of the upper partition plate to the lower surface of the upper wall of the chamber. Therefore, the gas flow passage area is reduced by the cylindrical member. Therefore, resistance is added to the gas flowing from the space inside the tubular member to the space outside the tubular member, and the flow rate of the gas supplied to the space outside the tubular member is reduced. As described above, the outer discharge port discharges the gas moved from the space inside the tubular member to the space outside the tubular member downward. Therefore, the flow rate of the gas discharged from the outer discharge port is reduced as compared with the case where there is no cylindrical member. Thereby, the speed of the gas discharged from the outer discharge port can be reduced.

  According to a seventh aspect of the present invention, the annular discharge port surrounds the substrate held by the substrate holding unit in a plan view, and discharges gas in the upper space downward, thereby forming a cylindrical shape in the lower space. An inner annular discharge port that forms a downward air flow, and a cylinder that is formed by the gas discharged from the inner annular discharge port by surrounding the inner annular discharge port in plan view and discharging the gas in the upper space downward The substrate processing apparatus according to claim 1, further comprising an outer annular discharge port that forms a cylindrical downflow air surrounding the downfall airflow in the lower space.

  When both the inner annular discharge port and the outer annular discharge port discharge gas downward, a plurality of cylindrical descending airflows arranged concentrically are formed in the lower space. Therefore, it is possible to more reliably suppress or prevent the diffusion of the contaminated atmosphere. Furthermore, since the outer cylindrical descending airflow is protected by the inner cylindrical descending airflow, the influence of the airflow flowing upward toward the exhaust port of the upper partition plate does not easily reach the outer cylindrical descending airflow. Therefore, at least one cylindrical downdraft can be reliably maintained.

It is the schematic diagram which looked at the inside of the processing unit with which the substrate processing apparatus concerning a 1st embodiment of the present invention was equipped horizontally. It is the schematic diagram which looked at the inside of the processing unit shown in FIG. 1 from the top. It is the schematic diagram which looked at a part of upper partition plate shown in FIG. 1 from the top. It is typical sectional drawing which shows the upper part of the processing unit shown in FIG. It is a schematic diagram which shows the airflow in the chamber shown in FIG. It is process drawing which shows the process example performed by the processing unit shown in FIG. It is the schematic diagram which looked at a part of upper partition plate concerning a 2nd embodiment of the present invention from the top. It is a typical sectional view showing the upper part of the processing unit concerning a 2nd embodiment of the present invention. It is a schematic diagram which shows the airflow in the chamber shown in FIG. It is a typical sectional view showing the upper part of the processing unit concerning a 3rd embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
The substrate processing apparatus 1 is a single wafer processing apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one. As shown in FIG. 1, the substrate processing apparatus 1 includes a processing unit 2 that processes a substrate W, a transfer robot (not shown) that transfers the substrate W to the processing unit 2, and a control device that controls the substrate processing apparatus 1. 3 is included.

  As shown in FIG. 1, the processing unit 2 includes a box-shaped chamber 4 and a vertical rotation axis A1 passing through the central portion of the substrate W while holding a single substrate W in a horizontal posture in the chamber 4. A spin chuck 5 for rotating the substrate W, a chemical liquid nozzle 6 and a rinsing liquid nozzle 7 for discharging a processing liquid toward the substrate W held by the spin chuck 5, and a cylindrical cup 8 surrounding the spin chuck 5. including.

  As shown in FIG. 2, the chamber 4 includes a box-shaped partition wall 9 provided with a loading / unloading port 10 through which the substrate W enters and leaves, and a shutter 11 that opens and closes the loading / unloading port 10. As shown in FIG. 1, the partition wall 9 includes a lower wall 12 disposed below the spin chuck 5 and the cup 8, an upper wall 13 disposed above the spin chuck 5 and the cup 8, and the spin chuck 5 and cup. 8 and a side wall 14 disposed around the periphery of 8. As shown in FIG. 2, the loading / unloading port 10 is provided on the side wall 14 of the chamber 4. The shutter 11 is movable with respect to the side wall 14 between an open position where the carry-in / out port 10 is opened and a closed position (a position shown in FIG. 2) where the carry-in / out port 10 is closed. A transfer robot (not shown) loads the substrate W into the chamber 4 through the loading / unloading port 10 and unloads the substrate W from the chamber 4 through the loading / unloading port 10.

  As shown in FIG. 1, the spin chuck 5 includes a disc-shaped spin base 15 held in a horizontal posture, a plurality of chuck pins 16 protruding upward from the peripheral edge of the upper surface of the spin base 15, and a plurality of chucks. And a chuck opening / closing unit 17 for holding the substrate W by the pins 16. The spin chuck 5 further rotates the spin base 15 and the chuck pin 16 around the rotation axis A1 by rotating the spin shaft 18 extending downward from the center of the spin base 15 along the rotation axis A1. A spin motor 19 to be operated.

  As shown in FIG. 1, the processing unit 2 includes a chemical liquid pipe 20 connected to the chemical liquid nozzle 6, a chemical liquid valve 21 interposed in the chemical liquid pipe 20, and a nozzle arm 22 with the chemical liquid nozzle 6 attached to the tip. And a chemical nozzle moving unit 23 that moves the chemical nozzle 6 by moving the nozzle arm 22. The chemical nozzle moving unit 23 is disposed around the cup 8. As shown in FIG. 2, the chemical nozzle moving unit 23 passes through the central portion of the substrate W in plan view by rotating the nozzle arm 22 around the nozzle rotation axis A <b> 2 extending in the vertical direction around the cup 8. The chemical solution nozzle 6 is moved horizontally along the arcuate locus.

  As shown in FIG. 1, the processing unit 2 includes a rinsing liquid pipe 24 connected to the rinsing liquid nozzle 7, a rinsing liquid valve 25 interposed in the rinsing liquid pipe 24, and the rinsing liquid nozzle 7 attached to the tip. And a rinsing liquid nozzle moving unit 27 that moves the rinsing liquid nozzle 7 by moving the nozzle arm 26. The rinse liquid nozzle moving unit 27 is arranged around the cup 8. As shown in FIG. 2, the rinsing liquid nozzle moving unit 27 rotates the rinsing liquid nozzle 7 about the nozzle rotation axis A <b> 3 extending in the vertical direction around the cup 8, so that the central portion of the substrate W is viewed in plan view. The rinsing liquid nozzle 7 is moved horizontally along an arcuate path passing through.

  The chemical liquid supplied to the chemical nozzle 6 is, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, hydrogen peroxide, organic acid (for example, citric acid, oxalic acid, etc.), organic alkali (for example, TMAH: tetra A liquid containing at least one of methylammonium hydroxide and the like, a surfactant, and a corrosion inhibitor. The rinse liquid supplied to the rinse liquid nozzle 7 is pure water (deionized water). The rinse liquid is not limited to pure water, but may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm).

  As shown in FIG. 1, the cup 8 includes a cylindrical outer wall 28 that surrounds the spin chuck 5, a cylindrical splash guard 29 that surrounds the spin chuck 5 between the outer wall 28 and the spin chuck 5, and a splash guard 29. And a guard lifting / lowering unit 30 that moves vertically. The outer wall 28 is fixed to the chamber 4, and the splash guard 29 can be raised and lowered with respect to the chamber 4.

  As shown in FIG. 1, the splash guard 29 includes a cylindrical inclined portion 32 that extends obliquely upward toward the rotation axis A <b> 1 and a cylindrical guide portion that extends downward from the lower end portion (outer end portion) of the inclined portion 32. 33. The outer wall 28 surrounds the guide portion 33 with an interval in the radial direction (a direction orthogonal to the rotation axis A1). The upper surface of the inclined portion 32 extends obliquely upward toward the rotation axis A1. The inclined portion 32 includes an annular upper end 31 having an inner diameter larger than that of the substrate W and the spin base 15. The upper end 31 of the inclined portion 32 corresponds to the upper end 31 of the splash guard 29. As shown in FIG. 2, the upper end 31 of the splash guard 29 surrounds the substrate W and the spin base 15 in plan view.

  As shown in FIG. 1, the guard lifting / lowering unit 30 includes a lower position where the upper end 31 of the splash guard 29 is located below the substrate W (a position indicated by a two-dot chain line in FIG. 1), and an upper end 31 of the splash guard 29 that is the substrate. The splash guard 29 is moved up and down between an upper position (a position indicated by a solid line in FIG. 1) positioned above W. The lower position is a retreat position where the substrate W is transferred between the transfer robot (not shown) and the spin chuck 5. The upper position is a processing position where the processing liquid splashing around the substrate W is received by the inner peripheral surface of the splash guard 29. The processing liquid received by the splash guard 29 is discharged from the cup 8 through a drain port 37 provided at the bottom of the cup 8 and guided to a collecting device or a waste liquid device (not shown).

  As shown in FIG. 1, the processing unit 2 has a lower exhaust duct 36a that exhausts the gas in the chamber 4 to the outside of the chamber 4 through the inside of the cup 8, and a lower exhaust unit that increases or decreases the speed of the exhaust gas flowing in the lower exhaust duct 36a. And an exhaust damper 36b. The lower exhaust duct 36 a is disposed around the outer wall 28 of the cup 8. An upstream end of the lower exhaust duct 36 a is connected to a lower exhaust port 35 provided in the outer wall 28. The lower exhaust duct 36 a and the lower exhaust port 35 are disposed below the spin base 15. The gas in the lower exhaust duct 36a is always sucked by an exhaust facility (not shown) provided in a factory where the substrate processing apparatus 1 is installed.

  As shown in FIG. 5, the gas in the cup 8 is sucked downward toward the lower exhaust port 35 by the suction force of the exhaust equipment transmitted through the lower exhaust duct 36a. Thereby, a descending air flow DC2 is formed in the cup 8. The gas drifting in the space above the cup 8 is guided to the space inside the upper end 31 of the splash guard 29 and the outer wall 28 of the cup 8 and the splash guard 29 by the suction force transmitted to the cup 8 from the lower exhaust duct 36a. It is sucked toward the annular gap 34 between the portions 33. Therefore, the gas in the chamber 4 is discharged out of the chamber 4 through the cup 8 and the lower exhaust duct 36a.

  As shown in FIG. 1, the processing unit 2 includes a lower partition plate 51 that divides the internal space of the chamber 4 around the cup 8 (specifically, a lower space 44 described later) vertically. The lower partition plate 51 is disposed between the outer wall 28 of the cup 8 and the side wall 14 of the chamber 4. The lower partition plate 51 is supported by the outer wall 28 of the cup 8 and the side wall 14 of the chamber 4. The lower partition plate 51 is disposed above the spin motor 19. The lower exhaust duct 36 a is disposed below the lower partition plate 51. FIG. 1 shows an example in which the upper surface of the lower partition plate 51 is inclined so as to extend obliquely downward toward the rotation axis A1. The upper surface of the lower partition plate 51 may be horizontal or may extend obliquely upward toward the rotation axis A1.

  As shown in FIG. 2, the inner end portion of the lower partition plate 51 is disposed along the outer peripheral surface of the outer wall 28 of the cup 8. The outer end portion of the lower partition plate 51 is disposed along the inner surface of the side wall 14 of the chamber 4. The chemical nozzle moving unit 23 extends from below the lower partition plate 51 to above the lower partition plate 51 through an insertion portion 52 provided on the lower partition plate 51. Similarly, the rinsing liquid nozzle moving unit 27 extends from below the lower partition plate 51 to above the lower partition plate 51 through an insertion portion 53 provided in the lower partition plate 51. The chemical nozzle 6 and the nozzle arm 22 are disposed above the lower partition plate 51. Similarly, the rinse liquid nozzle 7 and the nozzle arm 26 are disposed above the lower partition plate 51. The lower partition plate 51 may be a single plate or a plurality of plates arranged at the same height.

  As shown in FIG. 1, the processing unit 2 includes an FFU (fan filter unit) 38 that sends clean air (air filtered by a filter) from above the chamber 4, and an upper wall 13 of the chamber 4. And an upper partition plate 39 disposed at a height between the substrate and the substrate W held by the spin chuck 5. Although not shown, the FFU 38 includes a filter that filters air in a clean room in which the substrate processing apparatus 1 is disposed, and a fan that sends the air filtered by the filter toward the chamber 4.

  As shown in FIG. 4, the FFU 38 is disposed above the chamber 4. The FFU 38 is disposed above a circular air outlet 41 that penetrates the upper wall 13 of the chamber 4 in the vertical direction. As shown in FIG. 3, the air blowing port 41 is disposed at a position overlapping the substrate W in plan view. The outer diameter of the air blowing port 41 is smaller than the outer diameter of the substrate W. The FFU 38 has an annular shape surrounding the rotation axis A1. The control device 3 controls the FFU 38 so that the FFU 38 constantly supplies clean air into the chamber 4. The clean air sent downward from the FFU 38 is supplied to the upper space 43 between the upper wall 13 of the chamber 4 and the upper partition plate 39 through the air blowing port 41.

  As shown in FIG. 1, the upper partition plate 39 is held in a horizontal posture by the chamber 4. The lower partition plate 51 is disposed below the upper partition plate 39. The upper partition plate 39 partitions the internal space 42 of the chamber 4 into an upper space 43 above the upper partition plate 39 and a lower space 44 below the upper partition plate 39. An upper space 43 between the lower surface of the upper wall 13 of the chamber 4 and the upper surface of the upper partition plate 39 is a diffusion space in which clean air sent from the FFU 38 diffuses. A lower space 44 between the upper surface of the lower wall 12 of the chamber 4 and the lower surface of the upper partition plate 39 is a processing space in which the substrate W is processed. The height of the upper space 43 is smaller than the height of the lower space 44. The thickness of the upper partition plate 39 is smaller than the height of the upper space 43.

  As shown in FIG. 3, the upper partition plate 39 includes an annular discharge port 46 that surrounds the rotation axis A <b> 1 in a plan view, a plurality of outer discharge ports 47 disposed outside the annular discharge port 46, and the annular discharge port 46. And an upper exhaust port 48 disposed inside. The annular discharge port 46, the outer discharge port 47, and the upper exhaust port 48 all penetrate the upper partition plate 39 in the vertical direction. In FIG. 3, cross hatching is applied to the space portions of the annular discharge port 46, the outer discharge port 47, and the upper exhaust port 48. As will be described later, the clean air supplied from the FFU 38 to the upper space 43 is discharged downward from the annular discharge port 46 and the outer discharge port 47. Further, the gas in the lower space 44 is discharged out of the chamber 4 through the upper exhaust port 48.

  As shown in FIG. 3, the annular discharge port 46 of the upper partition plate 39 is disposed on the circumference whose center is disposed on the rotation axis A <b> 1. The outer diameter and inner diameter of the annular discharge port 46 are smaller than the inner diameter of the upper end 31 of the splash guard 29 and larger than the outer diameter of the substrate W. The annular discharge port 46 surrounds the substrate W and the air blowing port 41 in a plan view. The annular discharge port 46 includes a plurality of arc-shaped discharge ports 46a extending in the circumferential direction (direction around the rotation axis A1). The width (the length in the radial direction) of the arc-shaped discharge port 46a is the same at any position in the circumferential direction. The width of the arc discharge port 46a is smaller than the length of the arc discharge port 46a in the circumferential direction.

  As shown in FIG. 3, the plurality of outer discharge ports 47 of the upper partition plate 39 are arranged in a lattice pattern outside the annular discharge port 46. That is, the plurality of outer discharge ports 47 are arranged on a plurality of intersecting straight lines. FIG. 3 shows an example in which the outer discharge port 47 is circular. The outer discharge port 47 is not limited to a circle but may be an ellipse or a polygon such as a quadrangle. The diameter of the outer discharge port 47 is larger than the width of the annular discharge port 46 and smaller than the radius of curvature of the annular discharge port 46. The opening area of the outer discharge port 47 is smaller than the opening area of the annular discharge port 46. The plurality of outer discharge ports 47 are distributed throughout the upper partition plate 39 excluding the region inside the annular discharge port 46. The cup 8 and the lower partition plate 51 overlap one of the outer discharge ports 47 in plan view.

  As shown in FIG. 3, the upper exhaust port 48 of the upper partition plate 39 is disposed so that the entire area of the upper exhaust port 48 overlaps the substrate W in plan view. FIG. 3 shows an example in which the upper exhaust port 48 has a circular shape concentric with the annular discharge port 46. The upper exhaust port 48 is not limited to a circle but may be an ellipse or a polygon such as a quadrangle. Further, the upper exhaust port 48 may be constituted by a plurality of holes arranged inside the annular discharge port 46. The diameter of the upper exhaust port 48 is larger than the width of the annular discharge port 46 and smaller than the radius of curvature of the annular discharge port 46. The opening area of the upper exhaust port 48 is larger than the opening area of one outer discharge port 47.

  As shown in FIG. 4, the processing unit 2 includes an upper exhaust duct 49a that exhausts the gas in the chamber 4 to the outside of the chamber 4 through the upper exhaust port 48 of the upper partition plate 39, and the exhaust gas flowing in the upper exhaust duct 49a. And an upper exhaust damper 49b (see FIG. 1) for increasing and decreasing the speed. The upper exhaust duct 49 a extends upward from the upper partition plate 39. The upper exhaust duct 49a penetrates the upper wall 13 of the chamber 4 and the FFU 38 in the vertical direction. The upstream end (lower end) of the upper exhaust duct 49 a is connected to the upper exhaust port 48 of the upper partition plate 39. The upstream end of the upper exhaust duct 49a has a cylindrical shape that surrounds the entire upper exhaust port 48 in plan view. The upper exhaust port 48 is isolated from the upper space 43 by the upper exhaust duct 49a.

  The gas in the upper exhaust duct 49a is always sucked by an exhaust facility (not shown) provided in a factory where the substrate processing apparatus 1 is installed. The gas in the lower space 44 is sucked upward toward the upper exhaust port 48 and is discharged out of the chamber 4 through the upper exhaust port 48 and the upper exhaust duct 49a. As a result, an updraft UC (see FIG. 5) that flows toward the upper exhaust port 48 is formed in the lower space 44. The opening degree of the upper exhaust damper 49b and the lower exhaust damper 36b is such that the exhaust speed at the upper exhaust port 48 is smaller than the exhaust speed at the lower exhaust port 35 provided on the outer wall 28 of the cup 8. It is controlled by the control device 3.

  As shown in FIG. 4, the processing unit 2 includes a cylindrical member 40 that provides resistance to the gas flowing in the upper space 43. The tubular member 40 is disposed in the upper space 43. The tubular member 40 extends downward from the upper wall 13 of the chamber 4. The lower end of the cylindrical member 40 is opposed to the upper surface of the upper partition plate 39 with a space therebetween. The tubular member 40 and the upper partition plate 39 are separated from the inner space 55 inside the tubular member 40 by the lower end surface of the tubular member 40 and the upper surface of the upper partition plate 39 which are separated in the vertical direction. An annular gas flow path 50 for guiding clean air to the outer space 56 on the outer side is formed. The height of the gas flow path 50, that is, the distance between the lower end of the tubular member 40 and the upper surface of the upper partition plate 39 is higher than the height from the upper surface of the upper partition plate 39 to the lower surface of the upper wall 13 of the chamber 4. small.

  As shown in FIG. 3, the annular discharge port 46 of the upper partition plate 39 is disposed inside the cylindrical member 40 in plan view. The annular discharge port 46 surrounds the substrate W and the upper exhaust port 48 in plan view. Therefore, the substrate W and the upper exhaust port 48 are disposed inside the cylindrical member 40 in plan view. The outer discharge port 47 is disposed outside the cylindrical member 40 in plan view. The cylindrical member 40 surrounds the annular discharge port 46 at a position inside all the outer discharge ports 47 in plan view. The inner diameter of the tubular member 40 is larger than the inner diameter of the upper end 31 of the splash guard 29.

  As shown in FIG. 5, the clean air sent downward from the FFU 38 is supplied to the inner space 55 inside the tubular member 40 through the air blowing port 41 provided in the upper wall 13 of the chamber 4. The The clean air supplied to the inner space 55 collides with the upper surface of the upper partition plate 39 and changes its direction. As a result, clean air diffuses into the inner space 55, and the inner space 55 is filled with clean air. Clean air in the inner space 55 is discharged downward from an annular discharge port 46 disposed on the inner side of the tubular member 40. Thereby, the cylindrical descending airflow DC1 flowing downward from the annular discharge port 46 is formed in the lower space 44 by the clean air.

  As shown in FIG. 5, the outer diameter and inner diameter of the annular discharge port 46 are smaller than the inner diameter of the upper end 31 of the splash guard 29 and larger than the outer diameter of the substrate W. The annular discharge port 46 discharges clean air in the inner space 55 downward in the vertical direction. Therefore, when the upper end 31 of the splash guard 29 is disposed above the substrate W, the cylindrical descending airflow DC1 flows into the splash guard 29 through the space inside the upper end 31 of the splash guard 29, and then the substrate. The space around W and the spin base 15 passes downward. That is, the board | substrate W is arrange | positioned in the space inside cylindrical downdraft DC1. Therefore, the substrate W is isolated from the space outside the cylindrical downdraft DC1 by the cylindrical downdraft DC1.

  As shown in FIG. 5, the gas inside the cylindrical descending airflow DC <b> 1 is sucked downward toward the lower exhaust duct 36 a that sucks the gas in the cup 8 downward, and is arranged inside the annular discharge port 46. The air is sucked upward toward the upper exhaust port 48. Therefore, the gas inside the cylindrical descending airflow DC1 is quickly and efficiently replaced with new clean air discharged from the annular discharge port 46. For this reason, even if a contaminated atmosphere such as a chemical mist is generated in the space inside the cylindrical descending airflow DC1, the contaminated atmosphere is quickly discharged out of the chamber 4 via the lower exhaust duct 36a or the upper exhaust port 48. To be discharged.

  Further, since the annular discharge port 46 discharges clean air from above the splash guard 29 toward the space inside the upper end 31 of the splash guard 29, the lower exhaust duct 36a has a suction force for sucking the gas in the splash guard 29. , Is added to the cylindrical descending airflow DC1. Thereby, the more stable cylindrical downdraft DC1 is formed. Further, the control device 3 controls the upper exhaust damper 49b and the exhaust air so that the exhaust speed at the lower exhaust port 35 and the exhaust speed at the upper exhaust port 48 are smaller than the clean air speed at the annular discharge port 46. Since the opening degree of the lower exhaust damper 36b is controlled, the cylindrical descending airflow DC1 is hardly disturbed.

  As shown in FIG. 5, the inner space 55 inside the tubular member 40 is located outside the tubular member 40 via a gas flow path 50 formed by the tubular member 40 and the upper partition plate 39. It is connected to the outer space 56. The clean air diffused into the inner space 55 flows into the outer space 56 through the gas flow path 50. As a result, clean air diffuses into the outer space 56, and the outer space 56 is filled with clean air. Clean air in the outer space 56 is discharged downward from the respective outer discharge ports 47 disposed outside the cylindrical member 40. Thereby, the downward airflow DC3 flowing downward from the outer discharge port 47 is formed around the cylindrical downward airflow DC1 by the clean air.

  As shown in FIG. 5, the plurality of outer discharge ports 47 are distributed over the entire upper partition plate 39 except for the region inside the annular discharge port 46. As shown by the broken arrow in FIG. 5, the clean air that has reached the vicinity of the upper surface of the lower partition plate 51 is located between the outer wall 28 of the cup 8 and the guide portion 33 of the splash guard 29 by the upper surface of the lower partition plate 51. Guided toward the gap 34. Similarly, the clean air that has reached the vicinity of the inclined portion 32 of the splash guard 29 is guided toward the gap 34 between the outer wall 28 of the cup 8 and the guide portion 33 of the splash guard 29 by the upper surface of the inclined portion 32. . Therefore, clean air discharged from the plurality of outer discharge ports 47 is sucked into the cup 8 through the gap 34 between the outer wall 28 of the cup 8 and the guide portion 33 of the splash guard 29.

  As shown in FIG. 5, the height of the gas flow path 50 connecting the inner space 55 and the outer space 56 is smaller than the height from the upper surface of the upper partition plate 39 to the lower surface of the upper wall 13 of the chamber 4. Therefore, the flow area of clean air is reduced in the gas flow path 50. Therefore, resistance is added to the clean air flowing from the inner space 55 to the outer space 56, and the flow rate of the clean air supplied to the outer space 56 is reduced. Thereby, the speed of the clean air discharged from the outer discharge port 47 is reduced. The speed of clean air discharged from the outer discharge port 47 is lower than the speed of clean air discharged from the annular discharge port 46. Therefore, it is possible to suppress or prevent the cylindrical downdraft DC1 from being disturbed by the influence of the downdraft DC3.

FIG. 6 is a process diagram showing an example of processing performed by the processing unit 2 shown in FIG. Each of the following steps is executed in a state where the above-described downdrafts DC1, DC2, DC3, and the updraft UC are formed.
When the substrate W is processed by the processing unit 2, a carry-in process (step S1 in FIG. 6) for carrying the substrate W into the chamber 4 is performed.

  Specifically, the control device 3 moves the hand of the transfer robot (not shown) holding the substrate W into the chamber while the chemical solution nozzle 6 and the rinsing solution nozzle 7 are retracted from above the spin chuck 5. 4 is entered. Then, the control device 3 controls the transport robot so that the substrate W on the hand is placed on the plurality of chuck pins 16. Thereafter, the control device 3 retracts the hand of the transfer robot from the chamber 4. Further, after the substrate W is placed on the plurality of chuck pins 16, the control device 3 moves the chuck pins 16 from the open position to the closed position so that the plurality of chuck pins 16 grip the substrate W. Further, the shutter 11 is closed. Thereafter, the control device 3 starts the rotation of the spin motor 19.

Next, a chemical solution supply process (step S2 in FIG. 6) for supplying the chemical solution to the substrate W is performed.
Specifically, the control device 3 moves the chemical nozzle 6 from the retracted position to the processing position by controlling the chemical nozzle moving unit 23. At this time, the nozzle arm 22 traverses the cylindrical descending airflow DC1 (see FIG. 5) formed by the annular discharge port 46 and the descending airflow DC3 (see FIG. 5) formed by the outer discharge port 47 in the horizontal direction. And moved to a position facing the upper surface of the substrate W. As a result, the chemical nozzle 6 is disposed above the substrate W.

  After the chemical liquid nozzle 6 is disposed above the substrate W, the control device 3 opens the chemical liquid valve 21 and causes the chemical liquid nozzle 6 to discharge the chemical liquid toward the upper surface of the rotating substrate W. The control device 3 controls the chemical liquid nozzle moving unit 23 to move the chemical liquid landing position with respect to the upper surface of the substrate W between the central portion and the peripheral portion in this state. When a predetermined time elapses after the chemical liquid valve 21 is opened, the control device 3 closes the chemical liquid valve 21 and stops the discharge of the chemical liquid. Thereafter, the control device 3 retracts the chemical nozzle 6 from above the substrate W.

  The chemical liquid discharged from the chemical liquid nozzle 6 lands on the upper surface of the substrate W, and then flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the chemical liquid is supplied to the entire upper surface of the substrate W, and a liquid film of the chemical liquid covering the entire upper surface of the substrate W is formed on the substrate W. Thereby, the entire upper surface of the substrate W is treated with the chemical solution. Furthermore, since the control device 3 moves the liquid solution landing position with respect to the upper surface of the substrate W between the central portion and the peripheral portion while the substrate W is rotating, the liquid solution landing position is the substrate W It passes through the entire upper surface of. Therefore, the upper surface of the substrate W is processed uniformly.

  As described above, the chemical solution supply step is performed in a state where the cylindrical descending airflow DC1 and the like are formed. The chemical nozzle 6 passes through the cylindrical descending airflow DC1 and moves from the space outside the cylindrical descending airflow DC1 to the space inside the cylindrical descending airflow DC1. The chemical nozzle 6 discharges the chemical toward the substrate W in the cylindrical descending airflow DC1. Accordingly, a contaminated atmosphere such as a chemical mist is generated in the cylindrical descending airflow DC1.

  The contaminated atmosphere generated in the cylindrical descending airflow DC1 is discharged out of the chamber 4 through the lower exhaust duct 36a that sucks the inside of the cup 8. Even if a part of the contaminated atmosphere is not sucked into the lower exhaust duct 36a, the remaining contaminated atmosphere cannot move to the space outside the cylindrical descending airflow DC1, and the space inside the cylindrical descending airflow DC1 is not allowed to move. To rise. The upper exhaust port 48 of the upper partition plate 39 sucks the gas inside the cylindrical descending airflow DC1 upward. Therefore, the remaining contaminated atmosphere is discharged out of the chamber 4 through the upper exhaust port 48 and the upper exhaust duct 49a. Therefore, it is possible to prevent the contaminated atmosphere from remaining. Alternatively, the residual amount of the contaminated atmosphere can be extremely reduced.

After the chemical liquid supply process is performed, a rinse liquid supply process (step S3 in FIG. 6) for supplying pure water, which is an example of the rinse liquid, to the substrate W is performed.
Specifically, the control device 3 controls the rinse liquid nozzle moving unit 27 to move the rinse liquid nozzle 7 from the retracted position to the processing position. At this time, the nozzle arm 26 crosses the cylindrical downward air flow DC1 (see FIG. 5) formed by the annular discharge port 46 and the downward air flow DC3 (see FIG. 5) formed by the outer discharge port 47 in the horizontal direction. And moved to a position facing the upper surface of the substrate W. Thereby, the rinse liquid nozzle 7 is disposed above the substrate W.

  After the rinsing liquid nozzle 7 is arranged above the substrate W, the control device 3 opens the rinsing liquid valve 25 and causes the rinsing liquid nozzle 7 to discharge pure water toward the upper surface of the rotating substrate W. Thus, the chemical solution remaining on the substrate W is washed away with pure water, and a pure water liquid film covering the entire upper surface of the substrate W is formed. And when predetermined time passes since the rinse liquid valve | bulb 25 was opened, the control apparatus 3 will close the rinse liquid valve | bulb 25, and will stop discharge of pure water. Thereafter, the control device 3 retracts the rinse liquid nozzle 7 from above the substrate W.

  Similar to the chemical liquid supply process, the rinse liquid supply process is performed in a state where the cylindrical descending airflow DC1 and the like are formed. Although the influence may be smaller than the mist of the chemical solution, if the pure water mist adheres to the dried substrate W, the substrate W may be contaminated. However, like the mist of the chemical solution, the mist of pure water is prevented from diffusing by the cylindrical descending airflow DC1, and is discharged out of the chamber 4 through the lower exhaust duct 36a and the upper exhaust duct 49a. Therefore, it is possible to prevent the remaining mist of pure water. Alternatively, the residual amount of pure water mist can be extremely reduced.

After the rinsing liquid supply process is performed, a drying process (step S4 in FIG. 6) for drying the substrate W is performed by rotating the substrate W at a high speed.
Specifically, the control device 3 accelerates the rotation of the substrate W by the spin motor 19, and the substrate W is rotated at a high rotation speed (for example, several thousand rpm) higher than the rotation speed from the chemical solution supply process to the rinse liquid supply process. Rotate. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W. In this way, the liquid is removed from the substrate W, and the substrate W is dried. Then, when a predetermined time elapses after the high-speed rotation of the substrate W is started, the control device 3 stops the rotation of the spin motor 19.

Next, an unloading step (Step S5 in FIG. 6) for unloading the substrate W from the chamber 4 is performed.
Specifically, the control device 3 moves the chuck pin 16 from the closed position to the open position, and releases the grip of the substrate W by the spin chuck 5. Further, the shutter 11 is opened. Thereafter, the control device 3 causes the hand of the transfer robot (not shown) to enter the chamber 4 with all the nozzles retracted from above the spin chuck 5. Then, the control device 3 holds the substrate W on the spin chuck 5 on the hand of the transfer robot. Thereafter, the control device 3 retracts the hand of the transfer robot from the chamber 4. Thereby, the processed substrate W is unloaded from the chamber 4.

  As described above, in the first embodiment, the internal space 42 above the substrate W is partitioned into the upper space 43 and the lower space 44 below the upper space 43 by the upper partition plate 39. Clean air supplied to the upper space 43 by the FFU 38, which is an example of a blower unit, is discharged downward from an annular discharge port 46 formed in the upper partition plate 39. The clean air discharged from the annular discharge port 46 forms a cylindrical descending airflow DC1 that flows downward in the lower space 44.

  When the processing liquid is discharged from the chemical liquid nozzle 6 or the rinsing liquid nozzle 7 or when the processing liquid scatters around the substrate W, a contaminated atmosphere containing the processing liquid is generated near the substrate W. Since the cylindrical descending airflow DC1 surrounding the substrate W in plan view is formed in a space above the substrate W, this contaminated atmosphere is difficult to diffuse out of the cylindrical descending airflow DC1. Even if the contaminated atmosphere moves out of the cylindrical descending airflow DC1 or a contaminated atmosphere is generated outside the cylindrical descending airflow DC1, the contaminated atmosphere is unlikely to enter the cylindrical descending airflow DC1. Therefore, the contaminated atmosphere floating in the space outside the cylindrical descending airflow DC1 is difficult to adhere to the substrate W.

  The gas inside the cylindrical descending air flow DC1 is sucked into the upper exhaust port 48 of the upper partition plate 39 disposed inside the annular discharge port 46. Therefore, the contaminated atmosphere drifting in the space inside the cylindrical descending airflow DC1 is discharged from the lower space 44 through the upper exhaust port 48 of the upper partition plate 39. Further, since the upper exhaust port 48 of the upper partition plate 39 sucks the gas inside the cylindrical descending airflow DC1 upward, the generation of the descending airflow toward the upper surface of the substrate W is inhibited. For this reason, the contaminated atmosphere drifting in the space inside the cylindrical descending airflow DC1 does not easily reach the upper surface of the substrate W. Therefore, contamination of the substrate W due to adhesion of the contaminated atmosphere can be reduced.

  When using a diffusion prevention member (tangible material) for preventing the diffusion of the contaminated atmosphere, the contaminated atmosphere adheres to the inner surface of the diffusion preventing member, so that the inner surface of the diffusion preventing member is cleaned in order to maintain the cleanliness of the substrate W. There is a need to. On the other hand, in the case where the diffusion of the contaminated atmosphere is prevented by the airflow, such cleaning is not necessary. Furthermore, since the time for moving the diffusion preventing member and the mechanism for moving the diffusion preventing member are unnecessary, an increase in the time required for processing the substrate W can be suppressed or prevented, and the enlargement of the chamber 4 can be suppressed or prevented.

  Further, when using a diffusion preventing member for preventing the diffusion of the contaminated atmosphere, it is necessary to provide an opening for allowing the chemical nozzle 6 or the rinsing liquid nozzle 7 to pass through the diffusion preventing member, and the chemical nozzle 6 and the rinsing liquid. It is necessary to move the chemical liquid nozzle 6 and the rinsing liquid nozzle 7 so that the nozzle 7 does not collide with the diffusion preventing member. Furthermore, it is necessary to adjust the number of openings according to the number of chemical liquid nozzles 6 and rinse liquid nozzles 7. On the other hand, when the contamination atmosphere is prevented from being diffused by the airflow, an opening for passing the chemical liquid nozzle 6 and the rinsing liquid nozzle 7 is unnecessary, and the chemical liquid nozzle 6 and the rinsing liquid nozzle 7 and the diffusion preventing member are used. There is no need to consider collisions. Furthermore, it is not necessary to adjust the number of openings in accordance with the number of chemical liquid nozzles 6 and rinse liquid nozzles 7.

  In the first embodiment, the upper end 31 of the splash guard 29 that surrounds the substrate W in plan view is disposed above the substrate W. The processing liquid scattered from the substrate W is received on the inner peripheral surface of the splash guard 29 in this state. The annular discharge port 46 surrounds the substrate W at a position inside the upper end 31 of the splash guard 29 in plan view. Clean air discharged downward from the annular discharge port 46 passes through the space inside the upper end 31 of the splash guard 29 and forms a cylindrical descending airflow DC1 surrounding the substrate W.

  The lower exhaust duct 36a sucks the gas in the splash guard 29 downward. Clean air discharged from the annular discharge port 46 flows toward the space inside the upper end 31 of the splash guard 29 and is sucked toward the upper end 31 of the splash guard 29. That is, the suction force by which the lower exhaust duct 36a sucks the gas in the splash guard 29 is applied to the cylindrical descending airflow DC1, and a more stable cylindrical descending airflow DC1 is formed.

  In the first embodiment, the outer partition plate 39 is formed with an outer discharge port 47 that discharges clean air in the upper space 43 downward. The outer discharge port 47 is disposed outside the annular discharge port 46 that forms the cylindrical descending airflow DC1. Therefore, when the outer discharge port 47 discharges clean air, a downward air flow DC3 is formed around the cylindrical downward air flow DC1. Further, the lower exhaust duct 36 a for discharging the gas in the chamber 4 is disposed below the substrate W. Therefore, a downward airflow that flows downward from a position above the substrate W toward the lower exhaust duct 36 a is formed in the lower space 44.

  The contaminated atmosphere floating in the space outside the cylindrical descending airflow DC1 is pushed downward by the clean air discharged downward from the outer discharge port 47. Thereafter, the contaminated atmosphere is sucked toward the lower exhaust duct 36a and discharged into the lower exhaust duct 36a. Therefore, even if the contaminated atmosphere moves out of the cylindrical descending airflow DC1 or a contaminated atmosphere is generated outside the cylindrical descending airflow DC1, the contaminated atmosphere is moved out of the chamber 4 through the lower exhaust duct 36a. Efficiently discharged. Therefore, it is possible to suppress or prevent the contaminated atmosphere floating in the space outside the cylindrical descending airflow DC1 from adhering to the substrate W.

  In the first embodiment, the upper space 43 is partitioned by a cylindrical member 40 that is an example of a flow rate adjustment unit. The upper wall 13 of the chamber 4 forms a blower port 41 that supplies clean air sent from the FFU 38 to the inner space 55 inside the tubular member 40. The annular discharge port 46 is disposed inside the cylindrical member 40. Therefore, the annular discharge port 46 discharges clean air supplied from the FFU 38 to the inner space 55 downward. In addition, the outer discharge port 47 is disposed outside the cylindrical member 40. The outer discharge port 47 moves from the inner space 55 inside the tubular member 40 to the outer space 56 outside the tubular member 40 through the gas flow path 50 formed by the tubular member 40. Clean air is discharged downward.

  The height of the gas flow path 50 formed by the tubular member 40 is smaller than the height from the upper surface of the upper partition plate 39 to the lower surface of the upper wall 13 of the chamber 4. Accordingly, the flow area of the clean air is reduced by the cylindrical member 40. Therefore, resistance is added to the clean air flowing from the inner space 55 to the outer space 56, and the flow rate of the clean air supplied to the outer space 56 is reduced. As described above, the outer discharge port 47 discharges clean air moved from the inner space 55 to the outer space 56 downward. Therefore, the flow rate of clean air discharged from the outer discharge port 47 is reduced as compared with the case where the cylindrical member 40 is not provided. Thereby, the speed of the clean air discharged from the outer discharge port 47 can be reduced.

  The speed of clean air discharged from the outer discharge port 47 and the speed of clean air discharged from the annular discharge port 46 are adjusted by the tubular member 40. If the speed of the clean air discharged from the outer discharge port 47 is too larger than the speed of the clean air discharged from the annular discharge port 46, a large turbulence may occur in the cylindrical descending airflow DC1. The speed of clean air discharged from the outer discharge port 47 is smaller than the speed of clean air discharged from the annular discharge port 46. Therefore, the disturbance of the cylindrical descending airflow DC1 can be suppressed or prevented.

Second Embodiment Next, a second embodiment of the present invention will be described. In the following FIGS. 7 to 9, the same components as those shown in FIGS. 1 to 6 described above are denoted by the same reference numerals as those in FIG.
As shown in FIG. 7, in the second embodiment, instead of the annular discharge port 46 according to the first embodiment, an inner annular discharge port 46A that surrounds the rotation axis A1 of the substrate W in a plan view, and an inner annular shape in a plan view. An intermediate annular discharge port 46B that surrounds the discharge port 46A and an outer annular discharge port 46C that surrounds the intermediate annular discharge port 46B in plan view are formed in the upper partition plate 39. Each annular discharge port 46A, 46B, 46C penetrates the upper partition plate 39 in the vertical direction. In FIG. 7, cross hatching is applied to the space portions of the annular discharge ports 46 </ b> A, 46 </ b> B, 46 </ b> C, the outer discharge port 47, and the upper exhaust port 48.

  As shown in FIG. 7, each of the annular discharge ports 46A, 46B, 46C is arranged on a circumference that surrounds the rotation axis A1 in plan view. Each annular discharge port 46A, 46B, 46C includes a plurality of arc-shaped discharge ports 46a. Each annular discharge port 46A, 46B, 46C surrounds the substrate W in a plan view and is surrounded by the upper end 31 of the splash guard 29 in a plan view. Each annular discharge port 46 </ b> A, 46 </ b> B, 46 </ b> C is disposed inside the tubular member 40. The cylindrical member 40 surrounds the outer annular discharge port 46 </ b> C at a position inside all the outer discharge ports 47 in plan view. The plurality of outer discharge ports 47 are arranged concentrically outside the outer annular discharge port 46C. That is, the plurality of outer discharge ports 47 are disposed on a plurality of circumferences concentric with the outer annular discharge port 46C.

  As shown in FIGS. 8 and 9, each annular discharge port 46A, 46B, 46C discharges clean air in the upper space 43 downward in the vertical direction. The clean air discharged from the inner annular discharge port 46A forms a cylindrical descending airflow DC4 that surrounds the substrate W. The clean air discharged from the intermediate annular discharge port 46B forms a cylindrical descending airflow DC5 that surrounds the cylindrical descending airflow DC4. The clean air discharged from the outer annular discharge port 46C forms a cylindrical descending airflow DC6 that surrounds the cylindrical descending airflow DC5. Any of the cylindrical descending airflows DC4, DC5, DC6 flows into the splash guard 29 through the space inside the upper end 31 of the splash guard 29, and then passes downward through the space around the substrate W and the spin base 15.

  As shown in FIG. 9, the cylindrical descending air flow DC4 formed by the inner annular discharge port 46A arranged on the innermost side is easily affected by the suction force by the upper exhaust duct 49a. The cylindrical descending airflow DC4 protects the cylindrical descending airflow DC5 formed by the intermediate annular discharge port 46B from the suction force by the upper exhaust duct 49a. Therefore, the influence of the suction force by the upper exhaust duct 49a hardly reaches the cylindrical descending airflow DC5.

  On the other hand, the cylindrical descending airflow DC6 formed by the outer annular discharge port 46C arranged on the outermost side is easily affected by the descending airflow DC3 formed by the outer discharge port 47. The cylindrical descending airflow DC6 protects the cylindrical descending airflow DC5 formed by the intermediate annular discharge port 46B from the descending airflow DC3 formed by the outer discharge port 47. Therefore, the influence of the downdraft DC3 formed by the outer discharge port 47 is unlikely to affect the cylindrical downdraft DC5.

  That is, since the cylindrical descending airflow DC6 formed by the intermediate annular discharge port 46B is disposed between the cylindrical descending airflow DC4 and the cylindrical descending airflow DC5, the influence of the suction force by the upper exhaust duct 49a and the outside It is difficult to be affected by the downdraft DC3 formed by the discharge port 47. Therefore, the disturbance of the cylindrical descending airflow DC5 can be suppressed or prevented, and a stable cylindrical descending airflow DC5 can be formed.

  As described above, in the second embodiment, since the substrate W is surrounded by the plurality of cylindrical descending airflows DC4, DC5, and DC6 arranged concentrically, the diffusion of the contaminated atmosphere can be more reliably suppressed or prevented. Furthermore, the intermediate cylindrical downdraft DC5 is protected by the cylindrical downdrafts DC4 and DC6. Therefore, the influence of the airflow flowing upward toward the upper exhaust port 48 of the upper partition plate 39 and the influence of the downward airflow DC3 formed by the outer discharge port 47 are unlikely to reach the cylindrical downward airflow DC5. Therefore, the cylindrical descending airflow DC5 can be reliably maintained.

Third Embodiment Next, a third embodiment of the present invention will be described. In the following FIG. 10, the same components as those shown in FIGS. 1 to 9 are given the same reference numerals as those in FIG. 1 and the description thereof is omitted.
As shown in FIG. 9, in the third embodiment, the inner space 55 inside the tubular member 40 and the outer space 56 outside the tubular member 40 are composed of gas in the inner space 55 and the outer space 56. The cylindrical members 40 separate the horizontal spaces 56 so as not to move in the horizontal direction. The upper end of the cylindrical member 40 is attached to the lower surface of the upper wall 13 of the chamber 4, and the lower end of the cylindrical member 40 is attached to the upper surface of the upper partition plate 39. The processing unit 2 includes an FFU 67 disposed above the outer space 56 in addition to the FFU 38 disposed above the inner space 55. Clean air sent by the FFU 67 is supplied to the outer space 56 through the air outlet 68 provided in the upper wall 13 of the chamber 4.

  The FFU 38 and the FFU 67 are controlled by the control device 3. The control device 3 controls the FFU 38 and the FFU 67 so that the FFU 38 and the FFU 67 always supply clean air to the inner space 55 and the outer space 56, respectively. The flow rate of clean air sent to the inner space 55 and the outer space 56 is individually controlled by the control device 3. The control device 3 controls the FFU 38 and the FFU 67 so that the speed of the clean air discharged from the outer discharge port 47 is smaller than the speed of the clean air discharged from the annular discharge port 46. Therefore, it is possible to suppress or prevent the cylindrical downdraft DC1 formed by the clean air discharged from the annular discharge port 46 from being disturbed by the influence of the downflow DC3 formed by the clean air discharged from the outer discharge port 47. .

Other Embodiments Although the description of the embodiment of the present invention has been described above, the present invention is not limited to the contents of the above-described embodiment, and various modifications can be made within the scope of the present invention.
For example, in the above-described embodiment, the example in which the annular discharge port 46 is configured by the plurality of arc-shaped discharge ports 46a has been described. However, the annular discharge port 46 has a plurality of circular or elliptical holes arranged in the circumferential direction. The structure which was made may be sufficient, and the structure by which several holes of polygons, such as a rectangle, were arranged in the circumferential direction may be sufficient.

  In the above-described embodiment, the example in which the annular discharge port 46 discharges clean air so that the cylindrical descending airflow DC1 passes through the space inside the upper end 31 of the splash guard 29 has been described. May discharge clean air toward the upper surface of the inclined portion 32 of the splash guard 29. In this case, the annular discharge port 46 may discharge clean air downward in an obliquely downward direction that approaches or moves away from the rotation axis A <b> 1 from the annular discharge port 46.

  Further, in the above-described embodiment, the example in which the air blowing port 41 is formed inside the annular discharge port 46 in a plan view has been described in the above-described embodiment, but the air blowing port 41 is formed on the cylindrical member 40 in a plan view. If it is arranged inside, at least a part of the air blowing port 41 may be formed at a position overlapping the annular discharge port 46 in a plan view, or formed outside the annular discharge port 46 in a plan view. It may be.

In the above-described embodiment, the example in which the gas flow path 50 is formed between the lower end of the cylindrical member 40 and the upper surface of the upper partition plate 39 has been described. However, the upper end of the cylindrical member 40, the chamber A gas flow path 50 may be formed between the upper wall 13 and the upper wall 13, and the lower end of the tubular member 40 may be connected to the upper surface of the upper partition plate 39.
Further, in the above-described embodiment, the example in which the gas flow path 50 is formed by the lower end surface of the cylindrical member 40 and the upper surface of the upper partition plate 39 has been described. May be constituted by a plurality of through-holes penetrating in the horizontal direction. In this case, the lower end and the upper end of the cylindrical member 40 may be connected to the upper surface of the upper partition plate 39 and the lower surface of the upper wall 13 of the chamber 4.

  In the above-described embodiment, the example in which the spin chuck 5 is a sandwich chuck that holds the substrate W in a horizontal posture by pressing the plurality of chuck pins 16 against the peripheral edge of the substrate W has been described. The spin chuck 5 may be a vacuum chuck that holds the substrate W in a horizontal posture by adsorbing the back surface (lower surface) of the substrate W to the upper surface of the spin base 15 (adsorption base).

In the above-described embodiment, the case where the substrate processing apparatus 1 is an apparatus that processes a disk-shaped substrate W has been described. However, the substrate processing apparatus 1 is an apparatus that processes a polygonal substrate W. Also good.
Further, two or more of all the embodiments described above may be combined.

1: substrate processing device 2: processing unit 3: control device 4: chamber 5: spin chuck (substrate holding unit)
6: Chemical nozzle (treatment liquid nozzle)
7: Rinse liquid nozzle (treatment liquid nozzle)
8: Cup 13: Upper wall 29: Splash guard 31: Upper end 35: Lower exhaust port 36a: Lower exhaust duct 38: FFU (blower unit)
39: Upper partition plate 40: Tubular member 41: Blower port 43: Upper space 44: Lower space 46: Annular discharge port 46A: Inner annular discharge port 46B: Intermediate annular discharge port 46C: Outer annular discharge port 46a: Arc-shaped discharge Outlet 47: Outer discharge port 48: Lower exhaust port (exhaust port)
49a: Upper exhaust duct 50: Gas flow path 55: Inner space 56: Outer space 67: FFU (fan unit)
68: Blower DC1: Cylindrical downdraft DC2: Downdraft DC3: Downdraft DC4: Cylindrical downdraft DC5: Cylindrical downdraft DC6: Cylindrical downdraft UC: Updraft W: Substrate

Claims (7)

A chamber having an internal space;
A substrate holding unit for horizontally holding the substrate in the chamber;
A processing liquid nozzle that discharges the processing liquid toward the substrate held by the substrate holding unit;
An upper partition plate that partitions an internal space above the substrate held by the substrate holding unit into an upper space and a lower space below the upper space;
A blower unit that supplies gas from above the upper space to the upper space;
An annular discharge port that surrounds the substrate held by the substrate holding unit in a plan view, and forms a cylindrical downdraft in the lower space by discharging the gas in the upper space downward;
The substrate processing apparatus which is arrange | positioned inside the said cyclic | annular discharge port, and the exhaust port which attracts | sucks the gas inside the said cylindrical descending airflow upwards is formed in the said upper partition plate.   2. The substrate according to claim 1, further comprising a nozzle moving unit that moves the processing liquid nozzle between a space inside the cylindrical descending airflow and a space outside the cylindrical descending airflow through the cylindrical descending airflow. Processing equipment. The substrate processing apparatus includes:
A processing liquid that includes an annular upper end that surrounds the substrate held by the substrate holding unit in a plan view and scatters from the substrate held by the substrate holding unit in a state where the upper end is positioned above the substrate. A cylindrical splash guard that catches
A lower exhaust duct for discharging the gas in the splash guard out of the chamber by sucking the gas in the splash guard downward; and
The substrate processing apparatus according to claim 1, wherein the annular discharge port surrounds the substrate held by the substrate holding unit at a position inside the upper end of the splash guard in a plan view. The substrate processing apparatus is disposed in the chamber so as to be positioned below the substrate held by the substrate holding unit, and has a lower exhaust duct for discharging the gas in the chamber to the outside of the chamber. In addition,
The said upper partition plate is arrange | positioned on the outer side of the said annular discharge port, The outer discharge port which discharges the gas in the said upper space below is further formed in any one of Claims 1-3. 2. The substrate processing apparatus according to 1.   A flow rate for adjusting the flow rate of the gas supplied to the outer discharge port and the annular discharge port so that the speed of the gas discharged from the outer discharge port is smaller than the velocity of the gas discharged from the annular discharge port. The substrate processing apparatus according to claim 4, further comprising an adjustment unit. The flow rate adjustment unit surrounds the annular discharge port at a position inside the outer discharge port in a plan view, and includes a cylindrical member disposed in the upper space,
The chamber includes an upper wall disposed at a height between the blower unit and the upper partition plate,
A blower port that is disposed above the space inside the cylindrical member and supplies gas sent from the blower unit to the space inside the cylindrical member is formed in the upper wall of the chamber. And
The cylindrical member forms a gas flow path through which a gas flowing from a space inside the cylindrical member to a space outside the cylindrical member passes, and the height of the gas flow path is The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus is smaller than a height from an upper surface of the upper partition plate to a lower surface of the upper wall. The annular discharge port is
An inner annular discharge port that surrounds the substrate held by the substrate holding unit in a plan view, and forms a cylindrical downdraft in the lower space by discharging the gas in the upper space downward;
Surrounding the inner annular discharge port in plan view, and discharging the gas in the upper space downward, the cylindrical descending air flow surrounding the cylindrical descending air flow formed by the gas discharged from the inner annular discharge port The substrate processing apparatus according to claim 1, further comprising an outer annular discharge port formed in the lower space.

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