JP2015225893A - 配線基板および電子装置 - Google Patents
配線基板および電子装置 Download PDFInfo
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- JP2015225893A JP2015225893A JP2014108228A JP2014108228A JP2015225893A JP 2015225893 A JP2015225893 A JP 2015225893A JP 2014108228 A JP2014108228 A JP 2014108228A JP 2014108228 A JP2014108228 A JP 2014108228A JP 2015225893 A JP2015225893 A JP 2015225893A
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- pad
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- insulating substrate
- conductors
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- 239000004020 conductor Substances 0.000 claims abstract description 146
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 230000002093 peripheral effect Effects 0.000 claims abstract description 18
- 239000011247 coating layer Substances 0.000 claims description 18
- 230000003071 parasitic effect Effects 0.000 abstract description 11
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 24
- 239000000919 ceramic Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000007769 metal material Substances 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 230000008646 thermal stress Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 3
- 239000002241 glass-ceramic Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
う少なくとも一つの接地パッドとを含む複数の接続パッドが形成されており、平面視において、前記信号パッド用導体よりも前記接地パッド用導体が大きく、かつ前記信号パッドと前記接地パッドとが同じ大きさである。
パッド用導体2に電気的に接続される。絶縁基板1の内部には、例えばこの内部導体5等に対する電磁的シールド、電源電圧の安定(電源インピーダンスの低減)、および特性インピーダンス調整等のために、比較的広い面積で接地導体層6が設けられている。
焼成することによって絶縁基板1を製作することができる。
みが配置されている。そのため、配線基板10および電子装置20としての外部接続の信頼性を向上させる上でより有効な配線基板10および電子装置20を提供することができる。
2・・・パッド用導体
2a・・・信号パッド用導体
2b・・・接地パッド用導体
3・・・被覆層
4・・・接続パッド
4a・・・信号パッド
4b・・・接地パッド
5・・・配線導体
6・・・接地導体層
7・・・導電性接続材
8・・・接続導体
10・・・配線基板
20・・・電子装置
Claims (5)
- 第1主面を有する絶縁基板と、
該絶縁基板の前記第1主面に配列されており、少なくとも一つの信号パッド用導体と該信号パッド用導体に隣り合う少なくとも一つの接地パッド用導体とを含む複数のパッド用導体と、
前記絶縁基板の前記第1主面から前記複数のパッド用導体のそれぞれの外周部にかけて被覆している被覆層とを備えており、
前記複数のパッド用導体のうち前記被覆層で被覆された前記外周部よりも内側の露出部分により、少なくとも一つの信号パッドと該信号パッドに隣り合う少なくとも一つの接地パッドとを含む複数の接続パッドが形成されており、
平面視において、前記信号パッド用導体よりも前記接地パッド用導体が大きく、かつ前記信号パッドと前記接地パッドとが同じ大きさであることを特徴とする配線基板。 - 前記複数のパッド用導体が縦横の並びに配列されており、
一つの前記信号パッド用導体が、複数の前記接地パッド用導体に囲まれている
ことを特徴とする請求項1に記載の配線基板。 - 前記信号パッド用導体を囲む複数の前記接地パッド用導体において、前記信号パッド用導体と前記接地パッド用導体との隣接間隔が互いに同じであることを特徴とする請求項2に記載の配線基板。
- 前記複数のパッド用導体において、前記被覆層で被覆された前記外周部が前記絶縁基板の内部に入り込んでいることを特徴とする請求項1〜請求項3のいずれかに記載の配線基板。
- 請求項1〜請求項4のいずれかに記載の配線基板と、
前記絶縁基板の前記第1主面と反対側の第2主面に搭載された電子部品とを備えることを特徴とする電子装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014108228A JP6224525B2 (ja) | 2014-05-26 | 2014-05-26 | 配線基板および電子装置 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2014108228A JP6224525B2 (ja) | 2014-05-26 | 2014-05-26 | 配線基板および電子装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015225893A true JP2015225893A (ja) | 2015-12-14 |
JP6224525B2 JP6224525B2 (ja) | 2017-11-01 |
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JP2014108228A Expired - Fee Related JP6224525B2 (ja) | 2014-05-26 | 2014-05-26 | 配線基板および電子装置 |
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JP (1) | JP6224525B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3740048A1 (en) | 2019-05-15 | 2020-11-18 | NGK Spark Plug Co., Ltd. | Wiring board and manufacturing method thereof |
WO2023243017A1 (ja) * | 2022-06-15 | 2023-12-21 | 日本電信電話株式会社 | 電子部品パッケージ |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001007249A (ja) * | 1999-06-25 | 2001-01-12 | Nec Corp | パッケージ基板及びこれを備えた半導体装置 |
JP2005286303A (ja) * | 2004-03-05 | 2005-10-13 | Matsushita Electric Ind Co Ltd | 積層セラミック基板およびその製造方法 |
JP2010129572A (ja) * | 2008-11-25 | 2010-06-10 | Elpida Memory Inc | 電子装置及び半導体装置 |
JP2013214721A (ja) * | 2012-03-05 | 2013-10-17 | Kyocera Corp | 配線基板 |
-
2014
- 2014-05-26 JP JP2014108228A patent/JP6224525B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001007249A (ja) * | 1999-06-25 | 2001-01-12 | Nec Corp | パッケージ基板及びこれを備えた半導体装置 |
JP2005286303A (ja) * | 2004-03-05 | 2005-10-13 | Matsushita Electric Ind Co Ltd | 積層セラミック基板およびその製造方法 |
JP2010129572A (ja) * | 2008-11-25 | 2010-06-10 | Elpida Memory Inc | 電子装置及び半導体装置 |
JP2013214721A (ja) * | 2012-03-05 | 2013-10-17 | Kyocera Corp | 配線基板 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3740048A1 (en) | 2019-05-15 | 2020-11-18 | NGK Spark Plug Co., Ltd. | Wiring board and manufacturing method thereof |
US10849224B1 (en) | 2019-05-15 | 2020-11-24 | Ngk Spark Plug Co., Ltd. | Wiring board and manufacturing method thereof |
WO2023243017A1 (ja) * | 2022-06-15 | 2023-12-21 | 日本電信電話株式会社 | 電子部品パッケージ |
Also Published As
Publication number | Publication date |
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JP6224525B2 (ja) | 2017-11-01 |
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