JP2015155810A - Adjustment method of physical quantity detection device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a physical quantity detection device allowing high accuracy adjustment and reducing a manufacturing tact.

SOLUTION: The physical quantity detection device comprises: a semiconductor substrate; an analog circuit provided on the semiconductor substrate, and having temperature characteristics of an n-th polynomial equation; a temperature sensor 1 provided on the semiconductor substrate; a digital adjustment circuit having calibration means for calibrating an analog signal of the analog circuit; and a physical quantity detection element produced according to a semiconductor process. The calibration means adjusts the analog signal on the basis of n+1 or more pieces of temperature measurement data stored in the digital adjustment circuit. The measurement data is measured under temperature profile conditions having a measurement range in which the rate of temperature rise is larger than 0[°C/s] and smaller than the temperature time constant of the semiconductor substrate.

COPYRIGHT: (C)2015,JPO&INPIT

Description

  The present invention relates to a method for adjusting a physical quantity detection device.

  Combustion control in an internal combustion engine requires fuel supply control and grasping the intake flow rate of the internal combustion engine, and a flow rate measuring device is installed for grasping the intake flow rate.

  As a background technology of the flow measurement device, it is bridged by a heating resistor (also called hot wire or hot wire) installed in the intake passage, a gas temperature measuring resistor (also called cold wire or cold wire) and two fixed resistors. A circuit is configured to control power feeding so that the temperature of the heating resistor is always kept constant and the resistance balance of the bridge circuit is maintained.

  With this configuration, the heat dissipation amount of the heating resistor increases as the intake flow rate in the intake flow path increases, and is supplied to the heating resistor in order to keep the temperature of the heating resistor constant. Since the current increases, the air flow rate can be measured electrically based on the voltage appearing on the fixed resistor in series connection with the heating resistor.

  In addition, as a method of measuring the intake flow rate, there is also a method using a temperature difference. A flow rate detection element is installed in the intake flow path, and the temperature of the heating resistor of the flow rate detection element is controlled to a predetermined temperature. A temperature difference occurs between the upstream side and the downstream side in the flow direction of the intake air flow of the heating resistor. There is a system in which the temperature difference is detected by a temperature sensitive resistor or a thermocouple and the intake air flow rate is electrically measured.

  By processing the intake flow rate measured electrically by an adjustment calculation circuit having a predetermined input / output characteristic so as to obtain a required air flow rate vs. output signal characteristic, the intake flow rate and the predetermined flow rate are determined from the adjustment calculation circuit. It can be output as a related intake flow rate signal. Furthermore, a flow rate measuring device that enables high-speed response by forming a heating resistor and a temperature sensitive resistor using semiconductor technology is also used as a flow rate measuring device.

  The adjustment calculation circuit of the flow rate measuring device is currently made into a digital signal processing circuit, thereby realizing high-precision adjustment. Patent Document 1 describes an adjustment arithmetic circuit that performs adjustment using a digital signal processing circuit. The adjustment calculation circuit converts the flow signal in the analog signal form into a digital signal form by the analog-to-digital conversion circuit, then performs zero point and span adjustment by calculation processing by the digital operation circuit, and the analog-to-signal form by the digital-to-analog conversion circuit The flow rate signal in the form of an analog signal corresponding to the desired gas flow rate is output. The adjustment coefficient necessary for executing the adjustment operation in the digital operation circuit is stored in a storage device such as a PROM. In addition, since the digital arithmetic circuit is easy to perform non-linear calculations, not only zero point and span adjustment but also non-linear adjustment can be easily performed in the output adjustment. By this non-linear adjustment, the adjustment accuracy becomes ± 2% or less.

  It is desirable that the output characteristics of the gas flow rate measuring device have a small error even when the temperature changes, that is, a temperature-dependent error is small. Japanese Patent Application Laid-Open No. H10-228688 discloses a correction for reducing a temperature-dependent error in an adjustment method in the form of a digital signal. In this publication, in an adjustment method in the form of a digital signal, a signal processing system for adjusting output characteristics and a temperature sensor circuit for obtaining temperature information for correcting a temperature dependent error of the signal processing system are integrated on one semiconductor chip. The flow signal output characteristic adjustment with a small temperature dependent error is described by performing an adjustment calculation including a correction calculation for reducing the temperature dependent error in the signal processing system.

Japanese Patent No. 3073089 Japanese Patent No. 3753057

  In order to perform temperature correction with high accuracy for an analog circuit having a large-order temperature characteristic, a large number of characteristic measurement regions in which the temperature is stabilized are required. For this reason, if adjustment is performed with high accuracy, the manufacturing tact time becomes long, and there is a problem that it is difficult to achieve both mass productivity and measurement accuracy. About invention of patent document 1 and patent document 2, the room for improvement is left about coexistence of mass-productivity and measurement accuracy.

  An object of the present invention is to provide a physical quantity detection device capable of reducing a manufacturing tact while enabling a highly accurate adjustment.

  In order to achieve the above object, a physical quantity detection device according to the present invention includes a semiconductor substrate, an analog circuit provided on the semiconductor substrate and having an nth-order polynomial temperature characteristic, and a temperature sensor provided on the semiconductor substrate. And a digital adjustment circuit having a calibration means for calibrating an analog signal of the analog circuit, and a physical quantity detection element created by a semiconductor process, wherein the calibration means is at least n + 1 points stored in the digital adjustment circuit The analog signal is adjusted based on the temperature measurement data, and the measurement data has a temperature profile condition having a measurement region in which the temperature rising rate is larger than 0 [° C./s] and smaller than the temperature time constant of the semiconductor substrate. It is measured below.

  ADVANTAGE OF THE INVENTION According to this invention, it is possible to provide the physical quantity detection apparatus which can reduce a manufacturing tact, enabling a highly accurate adjustment. Therefore, it is possible to achieve both improvement in measurement accuracy and improvement in mass productivity.

Schematic diagram of intake air flow measurement device (Vout) Schematic diagram of intake air flow measurement device (Fout) Analog signal temperature characteristics adjustment comparison diagram (Nth order polynomial) Analog signal temperature characteristics adjustment comparison chart (exponential function) Profile conditions for temperature characteristic measurement of the first and second embodiments (applied constant current) Profile characteristics for temperature characteristics measurement in the first and second embodiments (constant temperature rise rate) Temperature characteristics measurement profile conditions of the third embodiment (two temperature stable regions) (constant current application) Profile characteristics for measuring temperature characteristics of the third embodiment (two temperature stable regions) (constant temperature rise rate) Temperature characteristics measurement profile conditions of the fourth embodiment (three temperature stable regions) (constant current application) Profile conditions for measuring temperature characteristics of the fourth embodiment (three temperature stable regions) (constant temperature rise rate) Circuit outline diagram (Vout) in which thermocouple is provided in analog signal circuit of fifth embodiment Circuit outline diagram (Fout) in which thermocouple is provided in analog signal circuit of fifth embodiment Schematic circuit diagram of an intake air flow rate measuring device provided with the physical quantity detecting element and the temperature sensor of the sixth embodiment on the same semiconductor substrate Explanatory drawing of the temperature characteristic measuring device of the intake air flow measuring device of the eighth embodiment (using heat transfer) Explanatory drawing of the temperature characteristic measuring device of the intake air flow measuring device of the eighth embodiment (using heat conduction) Explanatory drawing of the temperature characteristic measuring device of the intake air flow measuring device of the eighth embodiment (using thermal radiation)

  A first embodiment of the present invention will be described with reference to FIGS.

  The physical quantity detection device shown in the first embodiment detects a physical quantity to be measured. For example, physical quantities such as a flow rate, a flow velocity, a temperature, and an acceleration are detected as a measurement target, and the detected physical quantities are used for controlling an internal combustion engine, for example. A thermal gas flow measuring device will be described as an example of the physical quantity detection device.

  As shown in FIG. 1, the physical quantity detection device 19 in the first embodiment of the present invention includes a resin module, a sub-passage, an intake air temperature sensor 22, a physical quantity detection element 18, an LSI 17 created by a semiconductor process, and a terminal. The physical quantity detection device 19 is attached to the intake passage of the internal combustion engine, and a part of the resin module is exposed to the gas flowing through the intake passage. Part of the gas flowing through the intake passage is taken into the sub passage, and the flow rate of the gas flowing through the intake passage is measured by the physical quantity detection element 18 provided in the sub passage. Since the physical quantity detection element 18 is not configured to be directly exposed to the gas flowing in the intake flow path, the fouling resistance is improved.

  The physical quantity detection element 18 is provided with a heater control drive circuit 11 and a physical quantity detection circuit 9. The heater control drive circuit 11 includes a heating resistor serving as a heater, a heater driving circuit that controls a current supplied to the heating resistor, and a temperature-sensitive resistor or a thermocouple that detects the temperature of the heating resistor. The physical quantity detection circuit 9 is a bridge circuit composed of temperature sensitive resistors provided on the upstream and downstream sides of the heating resistor so as to detect the temperature difference between the upstream side and the downstream side in the gas flow direction. The gas flow rate is detected according to the balance state. A configuration in which a temperature difference is detected using a thermocouple instead of the temperature sensitive resistor of the physical quantity detection circuit 9 may be used.

  Since the voltage is applied to both ends of the bridge circuit, the gas flow rate is measured as a voltage (flow signal in the form of an analog signal) Vd having a magnitude corresponding to the gas flow rate Q 1. The heater driving circuit may be configured on the LSI 17.

  The intake air flow path of the internal combustion engine has a large environmental temperature change, and the physical quantity detection device 19 installed in the intake air flow path is susceptible to characteristic fluctuation due to temperature.

  A preferred circuit configuration for adjusting this characteristic variation is shown in FIGS.

  By configuring the analog signal circuit and the temperature sensor 1 on the same semiconductor substrate, the temperature characteristics are adjusted with high accuracy.

  As an analog signal circuit 12 configured on the same semiconductor substrate, an analog / digital conversion circuit 3 for converting an analog signal of the physical quantity detection circuit 9 into a digital signal, an analog signal of the heater control drive circuit is converted into a digital signal. An analog / digital conversion circuit 4 for converting the analog signal of the temperature sensor 1 into a digital signal, a digital / analog conversion circuit 6 for converting the digital signal adjusted for temperature characteristics into an analog signal, The reference power supply 2 is configured on the same semiconductor substrate.

  In a physical quantity detection device 19 that outputs a digital signal obtained by modulating a digital signal with adjusted temperature characteristics into frequency information, the oscillation circuit 7 is configured on the same semiconductor substrate as the temperature sensor 1 as shown in FIG.

  Temperature difference in a state where there is a temperature gradient in the semiconductor substrate, where ΔT is the temperature difference between each analog signal circuit of the analog signal circuit 12 configured on the same semiconductor substrate with reference to the temperature of the temperature sensor 1 The time until ΔT0 reaches 90% of ΔTa when ΔT0 is in a thermal equilibrium state and changes to a temperature difference ΔTa in the thermal equilibrium state is defined as the temperature time constant of the temperature sensor 1 and the individual analog signal circuits.

  The largest temperature time constant among the temperature time constants of the analog signal circuit 12 configured on the same semiconductor substrate as that of the temperature sensor 1 is defined as the temperature time constant of the semiconductor substrate. When a circuit serving as a heat generation source is configured on the semiconductor substrate, a temperature distribution is generated by the heat generation source. Therefore, a more preferable temperature time constant was evaluated under conditions equivalent to the operation state of the physical quantity detection device 19. Is. As a preferred configuration, the analog signal circuit and the temperature sensor 1 are mounted on a substrate having excellent heat conduction, the temperature time constant of the temperature sensor 1 and the analog signal circuit is small, and the temperature characteristics of the temperature sensor 1 and the analog signal circuit are low. Measurement or temperature characteristic adjustment is easy.

  The protection circuit 10 prevents surges, overvoltages, and high frequency noise from entering the signal processing system. The reference power supply 2 generates a power supply (mainly 3.3 V) that is used in the circuit. The heater control drive circuit 11 is feedback-controlled by the digital arithmetic circuit 8 so that the heater temperature becomes a predetermined temperature. The digital arithmetic circuit 8 reads and writes adjustment coefficients to and from the memory 13 including a digital signal processing circuit such as a CPU, a readable / writable memory (RAM), a read-only memory (ROM), and a writable memory (EPROM, EEPROM, etc.). A read / write circuit that performs output characteristic adjustment and temperature characteristic adjustment calculation in the form of a digital signal of the flow rate signal, and outputs the adjusted flow rate signal in the form of a digital signal.

  FIG. 6 is a diagram showing an example of a result of adjusting the temperature characteristics of an Nth order polynomial so that the output of the analog signal circuit is constant with respect to the temperature by measuring data of N−1 points, measuring data of N points, and measuring data of N + 1 points. This is shown in the plot of 2a. As the number of measurement data increases from N-1 point to N + 1 point, the output of the analog signal circuit can keep the variation with respect to temperature small. Since measurement data includes measurement errors, the influence of measurement errors can be reduced by increasing the number of measurement points over N + 1 points.

  FIGS. 3a and 3b improve the accuracy of temperature characteristic adjustment by acquiring measurement data of N + 1 points or more, make the temperature increase rate smaller than the temperature time constant of the semiconductor substrate, and continuously change the temperature. This is an example of a profile suitable for improving productivity and achieving both productivity and accuracy.

  By making the temperature rising rate smaller than the temperature time constant of the semiconductor substrate, the temperature difference between the analog signal circuit and the temperature sensor 1 can be kept small even if the temperature is continuously changed.

  The profile shown in FIG. 3a is a profile when the output of the temperature control device is constant. When the temperature control device is controlled in this way, the temperature rising rate generally decreases as the temperature increases. As a profile for improving productivity without reducing the temperature rise rate, it is possible to improve productivity by controlling the output of the temperature controller so that the temperature rise rate is constant as shown in FIG. 3b. It is. 3A and 3B show the direction in which the environmental temperature is raised, the environmental temperature may be changed in the temperature lowering direction, and in that case, the temperature lowering rate needs to be smaller than the temperature time constant of the semiconductor substrate. There is.

  A second embodiment of the present invention will be described with reference to FIG. The description of the same configuration as that of the first embodiment is omitted. The analog signal circuit in the second embodiment of the present invention has an exponential temperature characteristic. FIG. 2b shows a plot of the approximation accuracy when the exponential function is approximated by an Nth order polynomial. Increasing the order of the Nth order polynomial reduces the error and improves the approximation accuracy.

  In particular, the approximation accuracy is improved for N> second order polynomials. In other words, in the temperature adjustment of the analog signal circuit having the temperature characteristic of the exponential function, the temperature characteristic adjustment is performed by making the number of measurement data points in the profile larger than 3, that is, by obtaining the measurement data of 3 <N + 1 points or more. It is possible to carry out with high accuracy.

  A third embodiment of the present invention will be described with reference to FIGS. 4a and 4b. The description of the same configuration as that of the first embodiment or the second embodiment is omitted.

  A temperature sensor 1 mainly composed of a resistor on a semiconductor substrate has resistance variation due to a semiconductor process, and temperature calibration of the temperature sensor 1 is necessary to adjust temperature characteristics with high accuracy. The temperature characteristic measurement data 35 for adjusting the temperature characteristic of the analog signal circuit and the temperature calibration of the temperature sensor 1 is measured by the profile 32 shown in FIGS.

  The temperature characteristic of the resistor can be approximated as a linear function, and two points of temperature characteristic measurement data are required for calibration of the temperature sensor 1 constituted by the resistor. By providing temperature stabilization regions 33 and 34 for measuring data for calibrating the output of the temperature sensor 1 before and after the measurement region shown in the first embodiment or the second embodiment of the present invention, the analog signal circuit It is possible to perform temperature characteristic adjustment and temperature calibration of the temperature sensor 1. FIG. 4a shows a profile when the output of the temperature control device is constant, and FIG. 4b shows a profile when the output of the temperature control device is controlled so that the temperature increase rate is constant. When the output of the temperature control device is constant, the configuration of the device is simple, and the temperature characteristics can be adjusted without increasing the cost. When controlling the output of the temperature control device so that the rate of temperature increase is constant, it is possible to obtain data with high accuracy, and thus it is possible to adjust temperature characteristics with higher accuracy.

  A fourth embodiment of the present invention will be described with reference to FIGS. 5a and 5b. FIG. 5a shows a profile when the output of the temperature control device is constant, and FIG. 5b shows a profile when the output of the temperature control device is controlled so that the temperature increase rate is constant. The description of the same configuration as that of the third embodiment is omitted.

  In order to calibrate the temperature characteristics of the temperature sensor 1 more suitably, in the fourth embodiment of the present invention, in addition to the third embodiment, a temperature stable region 36 is further provided to obtain a total of three temperature characteristic measurement data. . That is, the temperature profile has a first measurement region 37 and a second measurement region 38, a temperature stable region 33 is provided in front of the first measurement region 37, and a temperature is provided after the second measurement region 38. A stable region 34 is provided, and a temperature stable region 36 is provided between the first measurement region 37 and the second measurement region 38. According to the temperature profile of the fourth embodiment, the temperature characteristics of the analog signal circuit and the temperature calibration of the temperature sensor 1 can be performed. According to the fourth embodiment of the present invention, the temperature characteristic of the temperature sensor 1 can be calibrated with a quadratic function, and the temperature characteristic adjustment accuracy can be further improved.

  A fifth embodiment of the present invention will be described with reference to FIGS. 6a and 6b. The description of the same configuration as that of the first embodiment or the second embodiment is omitted.

A thermocouple 39 is provided at a position adjacent to the analog signal circuit or in the analog signal circuit, and a temperature difference between the temperature sensor 1 and the analog signal circuit is detected and used for temperature characteristic adjustment of the analog signal circuit. Even if the temperature sensor 1 and the analog signal circuit are configured on the same semiconductor substrate, if a heat source is present on the semiconductor substrate, a temperature distribution is generated. Further, when the temperature sensor and the analog signal circuit are separated from each other, the temperature distribution becomes large, resulting in an error in temperature characteristic adjustment. According to the fifth embodiment of the present invention, since the temperature difference between the temperature sensor 1 and the analog signal circuit is detected and used for adjusting the temperature characteristics, the influence of the error due to the temperature distribution described above can be reduced, and the higher A sixth embodiment of the present invention that enables accurate temperature characteristic adjustment will be described with reference to FIG. The description of the same configuration as that of the first embodiment or the second embodiment is omitted.

  A physical quantity detection device 19 in which the physical quantity detection element 18, the analog signal circuit, the digital arithmetic circuit 8, and the temperature sensor 1 shown in FIG. 7 are configured on the same semiconductor substrate will be described. By configuring the physical quantity detection element 18 on the same semiconductor substrate as the temperature sensor 1, the temperature characteristic of the physical quantity detection element 18 can be adjusted. The temperature time constant of the semiconductor substrate is the largest temperature time constant of the analog signal circuit configured on the same semiconductor substrate as the temperature sensor, including the temperature time constants of the physical quantity detection element 18 and the temperature sensor 1. Temperature characteristics can be adjusted by making the temperature rising rate smaller than the temperature time constant of the semiconductor substrate.

  The physical quantity detection device 19 having the configuration described in the first to seventh embodiments uses the temperature control device using the heat transfer shown in FIG. 8a or the heat conduction shown in FIG. 8b so as to have the temperature profile described above. The temperature characteristic is measured by the temperature control device, the temperature control device using the heat radiation shown in FIG. 8c, or the temperature control device in which these are combined. The temperature characteristic of the physical quantity detection device is adjusted based on the measured measurement data.

DESCRIPTION OF SYMBOLS 1 Temperature sensor 2 Reference power supply 3 Analog / digital conversion circuit 4 Analog / digital conversion circuit 5 Analog / digital conversion circuit 6 Digital / analog conversion circuit of digital signal after characteristic adjustment 7 Oscillation circuit 8 Digital arithmetic circuit 9 Physical quantity detection circuit 10 Protection Circuit 11 Heater control drive circuit 12 Analog signal circuit configured on the same semiconductor substrate 13 Memory (ROM, RAM, PROM)
14 Power supply VCC of physical quantity detection device
15 Output Vout of physical quantity detection device
16 Circuit of Physical Quantity Detection Device 17 LSI
18 Physical quantity detection element 19 Physical quantity detection device 25 Result of correcting Nth order polynomial from temperature characteristic data of N-1 point 26 Result of correcting Nth order polynomial from temperature characteristic data of N point 27 Nth order polynomial of N + 1 point 28: Approximation error obtained by approximating a function whose exponential base is 2.5 with an Nth order polynomial 29 Approximation error obtained by approximating a function whose base 3 is an exponential function with an Nth order polynomial 30 Exponential Approximate error obtained by approximating a function whose base of the function is 4 with an Nth order polynomial 31 Temperature characteristic measurement data at N + 1 points 32 Temperature characteristic measurement profile 33 Temperature stability region provided before a profile for temperature characteristic calibration of a temperature sensor 34 Temperature stability region provided after profile for temperature characteristic calibration of temperature sensor 35 Temperature characteristic measurement data for temperature characteristic calibration of temperature sensor 36 Temperature Temperature stable region provided in profile for temperature characteristic calibration of sensor 37 First temperature characteristic measurement region of temperature profile 38 Second temperature characteristic measurement region of temperature profile 39 Adjacent to analog signal circuit or in analog signal circuit 40 Thermoregulatory equipment 41 Temperature controller for heating 42 Temperature controller for cooling 43 Physical quantity detection device (chip)
44 Temperature Sensor for Temperature Control Equipment 45 Temperature Control Plate 46 Thermal Radiation Device 47 Thermal Radiation 48 Thermal Radiation Absorption Plate

Claims (9)

An analog signal circuit provided on a semiconductor substrate and having an nth-order polynomial temperature characteristic;
A temperature sensor provided on the semiconductor substrate;
A digital arithmetic circuit provided on the semiconductor substrate and having a calibration means for calibrating an analog signal of the analog signal circuit;
A physical quantity detection element,
The calibration means adjusts the analog signal based on temperature measurement data of n + 1 points or more stored in the digital arithmetic circuit,
The physical quantity detection device according to claim 1, wherein the measurement data is measured under a temperature profile condition having a measurement region in which a temperature rising rate is larger than 0 [° C./s] and smaller than a temperature time constant of the semiconductor substrate. An analog signal circuit provided on the semiconductor substrate and having an exponential temperature characteristic;
A temperature sensor provided on the semiconductor substrate;
A digital arithmetic circuit having calibration means for calibrating the analog signal of the analog signal circuit;
A physical quantity detection element,
The calibration means adjusts the analog signal based on four or more temperature measurement data stored in the digital arithmetic circuit,
The physical quantity detection device according to claim 1, wherein the measurement data is measured under a temperature profile condition having a measurement region in which a temperature rising rate is larger than 0 and smaller than a temperature time constant of the semiconductor substrate. The physical quantity detection device according to claim 1 or 2,
The physical quantity detection device, wherein the temperature profile has a temperature stable region for measuring data for calibrating the output of the temperature sensor before and after the measurement region. The physical quantity detection device according to claim 1 or 2,
The measurement area has a first measurement area and a second measurement area,
The temperature profile measures data for calibrating the output of the temperature sensor before the first measurement region, after the second measurement region, and between the first measurement region and the second measurement region. A physical quantity detecting device having a temperature stable region.   5. The physical quantity detection device according to claim 1, wherein the physical quantity detection element, the analog signal circuit, the digital arithmetic circuit, and the temperature sensor are configured on the same semiconductor substrate. Detection device. 5. The physical quantity detection device according to claim 1, wherein the analog signal circuit, the digital arithmetic circuit, and the temperature sensor are configured on the same semiconductor substrate, and the physical quantity detection element is different from the semiconductor substrate. Separately configured,
The physical quantity detection device according to claim 1, wherein a temperature rise rate of the temperature profile is set smaller than a temperature time constant of the temperature sensor and the physical quantity detection element.   7. The physical quantity detection device according to claim 1, wherein a temperature control device using heat transfer, a temperature control device using heat conduction, or a temperature using heat radiation so that the temperature profile is obtained. A physical quantity detection device in which temperature characteristics are adjusted based on measurement data measured by a control device or a temperature control device in which these are combined. In a method for adjusting a physical quantity detection device, comprising an analog signal circuit provided on a semiconductor substrate and having an nth-order polynomial temperature characteristic, and a temperature sensor provided on the semiconductor substrate,
The analog signal circuit based on temperature measurement data at n + 1 points or more measured under a temperature profile condition having a measurement region having a temperature rising rate larger than 0 [° C./s] and smaller than a temperature time constant of the semiconductor substrate. A method for adjusting a physical quantity detection device, characterized in that an output signal of the physical quantity is adjusted. In an adjustment method of a physical quantity detection device provided on the semiconductor substrate, the analog signal circuit having an exponential temperature characteristic, and a temperature sensor provided on the semiconductor substrate,
The analog signal circuit based on temperature measurement data of four or more points measured under a temperature profile condition having a measurement region having a temperature rising rate larger than 0 [° C./s] and smaller than a temperature time constant of the semiconductor substrate. A method for adjusting a physical quantity detection device, characterized in that an output signal of the physical quantity is adjusted.