[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JP2015144301A - optical semiconductor device - Google Patents

optical semiconductor device Download PDF

Info

Publication number
JP2015144301A
JP2015144301A JP2015046715A JP2015046715A JP2015144301A JP 2015144301 A JP2015144301 A JP 2015144301A JP 2015046715 A JP2015046715 A JP 2015046715A JP 2015046715 A JP2015046715 A JP 2015046715A JP 2015144301 A JP2015144301 A JP 2015144301A
Authority
JP
Japan
Prior art keywords
semiconductor device
optical semiconductor
layer
high thermal
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015046715A
Other languages
Japanese (ja)
Inventor
孝志 尾崎
Takashi Ozaki
孝志 尾崎
近藤 隆
Takashi Kondo
隆 近藤
赤沢 光治
Mitsuharu Akazawa
光治 赤沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP2015046715A priority Critical patent/JP2015144301A/en
Publication of JP2015144301A publication Critical patent/JP2015144301A/en
Pending legal-status Critical Current

Links

Landscapes

  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an optical semiconductor device with a high heat dissipation property.SOLUTION: An optical semiconductor device comprises: a tabular substrate 1 with an LED chip mounted thereon; a sealing resin layer 2 in which the LED chip is buried; an inorganic high-heat conduction layer 3; and a wavelength conversion layer 4 including inorganic phosphor powder. In the optical semiconductor device, the sealing resin layer, the inorganic high-heat conduction layer, and the wavelength conversion layer are directly or indirectly stacked on the substrate in this order; the inorganic high-heat conduction layer has a thickness of 10-1000 μm. The optical semiconductor device can be preferably used in high-power applications including a general luminaire using LED as a light emission source, a backlight of a display, and a head light of a motor vehicle.

Description

本発明は、光半導体装置に関する。さらに詳しくは、LED(発光ダイオード)を具備した、放熱性に優れる光半導体装置に関する。   The present invention relates to an optical semiconductor device. More specifically, the present invention relates to an optical semiconductor device having an LED (light emitting diode) and excellent in heat dissipation.

近年、白色発光ダイオード(LED)が大幅な省エネを実現する、新しい照明光源として注目されている。白色LED装置は、青色を放射するGaN系LEDチップと、LEDチップから放射される光によって励起されてLEDとは異なる波長の光を発光する蛍光体とを組み合わせることにより得られる。   In recent years, white light emitting diodes (LEDs) have attracted attention as a new illumination light source that achieves significant energy savings. The white LED device is obtained by combining a GaN LED chip that emits blue light and a phosphor that emits light having a wavelength different from that of the LED when excited by light emitted from the LED chip.

最近では、一般照明や自動車用ヘッドライト等の特殊照明といった、ハイパワー用途の白色LEDが開発されつつある。ハイパワー白色LEDでは、波長変換部材の局所的な発熱が問題となっており、LEDの放熱性について種々の検討がされている。   Recently, white LEDs for high power applications such as general lighting and special lighting such as automobile headlights are being developed. In the high power white LED, local heat generation of the wavelength conversion member is a problem, and various studies have been made on the heat dissipation of the LED.

例えば、特許文献1では、LEDチップのレンズカバーを有機材料を含まない材料にて構成することによって、レンズカバーの耐熱性が向上すると共に、熱伝導率を0.9W/mK以上と比較的高いものとしている。また、特許文献2では、色変換部材(波長変換部材)の特定位置に光拡散材を配置させることによって、光拡散材を波長変換部材の全体に分散させる場合と比べて使用量を低減でき、かつ、LED光束の集中を緩和させ、波長変換部材の局所的な発熱を抑制している。   For example, in Patent Document 1, the lens cover of the LED chip is made of a material that does not contain an organic material, whereby the heat resistance of the lens cover is improved and the thermal conductivity is relatively high, 0.9 W / mK or more. It is said. Moreover, in patent document 2, the usage-amount can be reduced compared with the case where a light-diffusion material is disperse | distributed to the whole wavelength conversion member by arrange | positioning a light-diffusion material in the specific position of a color conversion member (wavelength conversion member), In addition, the concentration of the LED light flux is relaxed, and local heat generation of the wavelength conversion member is suppressed.

特開2007−250817号公報JP 2007-250817 A 特開2009−130299号公報JP 2009-130299 A

特許文献1に記載のレンズカバーは、熱伝導率が0.9W/mK以上のものであるが、高出力LED用途としては依然満足できるものではない。また、特許文献2に記載の色変換部材(波長変換部材)は、蛍光体粒子と光拡散材を含むことから、熱伝導率が十分に高いものとは言えない。よって、放熱性がさらに優れる光半導体装置が求められる。   The lens cover described in Patent Document 1 has a thermal conductivity of 0.9 W / mK or more, but is still unsatisfactory for high-power LED applications. Moreover, since the color conversion member (wavelength conversion member) described in Patent Document 2 includes phosphor particles and a light diffusion material, it cannot be said that the thermal conductivity is sufficiently high. Therefore, an optical semiconductor device that is further excellent in heat dissipation is required.

本発明の課題は、放熱性の高い光半導体装置を提供することにある。   The subject of this invention is providing the optical semiconductor device with high heat dissipation.

本発明は、LEDチップが実装されてなる平板状の基板、該LEDチップを埋設してなる封止樹脂層、無機高熱伝導層、及び無機蛍光体粉末を含有する波長変換層を具備してなる光半導体装置であって、前記基板上に、封止樹脂層、無機高熱伝導層、及び波長変換層が、直接又は間接的に、この順に積層されてなり、かつ、前記無機高熱伝導層の厚みが10〜1000μmである光半導体装置、に関する。   The present invention comprises a flat substrate on which an LED chip is mounted, a sealing resin layer in which the LED chip is embedded, an inorganic high thermal conductive layer, and a wavelength conversion layer containing an inorganic phosphor powder. In the optical semiconductor device, a sealing resin layer, an inorganic high thermal conductive layer, and a wavelength conversion layer are laminated directly or indirectly in this order on the substrate, and the thickness of the inorganic high thermal conductive layer Relates to an optical semiconductor device having a thickness of 10 to 1000 μm.

本発明の光半導体装置は、放熱性に優れることから、高出力の白色LED装置としても好適に使用することができる。   Since the optical semiconductor device of the present invention is excellent in heat dissipation, it can be suitably used as a high-power white LED device.

図1は、本発明の光半導体装置の一例を示す図である。FIG. 1 is a diagram showing an example of an optical semiconductor device of the present invention. 図2は、本発明の光半導体装置の製造方法の一態様について、具体的な状態を示す図である。左がLEDチップを埋設する封止樹脂層の構成樹脂溶液、無機高熱伝導層、及び無機蛍光体粉末を含有する波長変換層を、凹型金型内に配置した状態、中が封止加工した状態、右が凹型金型を取り除いた状態を示す図である。FIG. 2 is a diagram showing a specific state of one aspect of the method for manufacturing an optical semiconductor device of the present invention. The left is a state in which the wavelength conversion layer containing the constituent resin solution, the inorganic high thermal conductive layer, and the inorganic phosphor powder is embedded in the concave mold, and the inside is sealed. The right side is a diagram showing a state in which the concave mold is removed.

本発明の光半導体装置は、LEDチップが実装された基板、該LEDチップを埋設した封止樹脂層、無機高熱伝導層、及び無機蛍光体粉末を含有する波長変換層を具備するものであって、前記基板上に、封止樹脂層、無機高熱伝導層、及び波長変換層が、直接又は間接的に、この順に積層されていることを特徴とする。なお、本明細書において、封止樹脂層、無機高熱伝導層、及び波長変換層が「直接積層」している状態とは、封止樹脂層上に無機高熱伝導層と波長変換層がこの順に直接積層又は配置された状態を表わし、「間接的に積層」している状態とは、封止樹脂層と無機高熱伝導層との間、及び/又は、無機高熱伝導層と波長変換層との間、に任意の他の樹脂層(例えば、光核酸粒子を含有する樹脂層)を介して積層又は配置された状態を表す。   An optical semiconductor device of the present invention includes a substrate on which an LED chip is mounted, a sealing resin layer in which the LED chip is embedded, an inorganic high thermal conductive layer, and a wavelength conversion layer containing an inorganic phosphor powder. The sealing resin layer, the inorganic high thermal conductive layer, and the wavelength conversion layer are laminated directly or indirectly in this order on the substrate. In this specification, the state in which the sealing resin layer, the inorganic high thermal conductive layer, and the wavelength conversion layer are “directly laminated” means that the inorganic high thermal conductive layer and the wavelength conversion layer are in this order on the sealing resin layer. It represents the state of direct lamination or arrangement, and the state of “indirect lamination” means between the sealing resin layer and the inorganic high thermal conductive layer and / or between the inorganic high thermal conductive layer and the wavelength conversion layer. A state in which the layers are stacked or arranged via any other resin layer (for example, a resin layer containing photonucleic acid particles).

無機蛍光体は、LEDチップから放射された光によって励起されると、波長変換した光を放射する。その際に、無機蛍光体の損失エネルギーが波長変換層に吸収されて、波長変換層の温度が上昇する。しかし、波長変換層の周囲に熱伝導性の高くない層が存在する場合には、波長変換層の熱が拡散されないために、結果的に、光半導体装置の温度が高くなり、封止材等の劣化を招くことになる。一方、装置の輝度を向上する観点からは、波長変換層は、該波長変換層や封止樹脂層などを含む封止部の最外層に位置することが好ましい。そこで、本発明では、波長変換層と、LEDチップを包埋する封止樹脂層との間に、熱伝導性の高い無機物によって構成される熱伝導層を設ける。即ち、波長変換層で発生した熱を、熱伝導層から、封止樹脂層、基板へと順に伝導させて放熱し易くすることで、光半導体装置の放熱性を高めて、ひいては、封止部の劣化が抑制されて装置の耐久性が高められると考えられる。   When the inorganic phosphor is excited by light emitted from the LED chip, it emits wavelength-converted light. At that time, the loss energy of the inorganic phosphor is absorbed by the wavelength conversion layer, and the temperature of the wavelength conversion layer rises. However, if there is a layer having a low thermal conductivity around the wavelength conversion layer, the heat of the wavelength conversion layer is not diffused. As a result, the temperature of the optical semiconductor device is increased, and the sealing material, etc. Will lead to deterioration. On the other hand, from the viewpoint of improving the luminance of the device, the wavelength conversion layer is preferably located in the outermost layer of the sealing portion including the wavelength conversion layer and the sealing resin layer. Therefore, in the present invention, a heat conductive layer composed of an inorganic material having high heat conductivity is provided between the wavelength conversion layer and the sealing resin layer that embeds the LED chip. That is, the heat generated in the wavelength conversion layer is conducted in order from the heat conductive layer to the sealing resin layer and the substrate to facilitate heat dissipation, thereby improving the heat dissipation of the optical semiconductor device, and thus the sealing portion. It is considered that the durability of the apparatus is improved by suppressing the deterioration of the apparatus.

本発明の光半導体装置の構成について、図1を用いて説明する。なお、以降の説明において、封止樹脂層、無機高熱伝導層、及び波長変換層をまとめて、本発明の光半導体装置における封止部ということもある。   The structure of the optical semiconductor device of the present invention will be described with reference to FIG. In the following description, the sealing resin layer, the inorganic high thermal conductive layer, and the wavelength conversion layer may be collectively referred to as a sealing portion in the optical semiconductor device of the present invention.

図1における1は、LEDチップが実装された基板を示す。   1 in FIG. 1 indicates a substrate on which an LED chip is mounted.

本発明におけるLEDチップ(光半導体素子)は、通常、光半導体装置に用いられるものであれば特に限定されず、例えば、窒化ガリウム(GaN、屈折率:2.5)、ガリウムリン(GaP、屈折率:2.9)、ガリウム砒素(GaAs、屈折率:3.5)などが挙げられ、これらの中では、紫外光〜可視光青色域を発光し、蛍光体を介して白色LEDの製造ができるという観点から、GaNが好ましい。   The LED chip (optical semiconductor element) in the present invention is not particularly limited as long as it is usually used in an optical semiconductor device. For example, gallium nitride (GaN, refractive index: 2.5), gallium phosphide (GaP, refractive index: 2.9), gallium arsenide (GaAs, refractive index: 3.5) and the like. Among these, GaN emits light in the ultraviolet to visible blue region, and from the viewpoint that a white LED can be manufactured through a phosphor. Is preferred.

LEDチップが搭載される基板も特に限定されないが、例えば、メタル基板、ガラス−エポキシ基板に銅配線を積層したリジッド基板、ポリイミドフィルム上に銅配線を積層したフレキシブル基板などが挙げられ、平板や凹凸板等いずれの形態のものも用いることができる。   The substrate on which the LED chip is mounted is not particularly limited, and examples thereof include a metal substrate, a rigid substrate in which copper wiring is laminated on a glass-epoxy substrate, and a flexible substrate in which copper wiring is laminated on a polyimide film. Any form such as a plate can be used.

当該基板へのLEDチップの搭載方法としては、発光面に電極が配置されたLEDチップを搭載するのに好適なフェイスアップ搭載法、発光面とは逆の面に電極が配置されたLEDチップを搭載するのに好適なフリップリップ搭載法などが挙げられる。   As a mounting method of the LED chip on the substrate, a face-up mounting method suitable for mounting an LED chip having an electrode disposed on a light emitting surface, an LED chip having an electrode disposed on a surface opposite to the light emitting surface is used. A flip lip mounting method suitable for mounting can be mentioned.

図1における2は、LEDチップを埋設した封止樹脂層を示す。   1 in FIG. 1 indicates a sealing resin layer in which an LED chip is embedded.

封止樹脂層を構成する樹脂としては、従来から光半導体封止に用いられる樹脂であれば特に限定はなく、シリコーン樹脂、エポキシ樹脂等の熱硬化性透明樹脂等が挙げられ、これらは、1種又は2種以上組み合わせて用いることができる。なかでも、耐熱性及び耐光性の観点から、シリコーン樹脂が好ましい。なお、これらの樹脂は市販品であっても、公知の方法に従って合成したものでもよい。   The resin constituting the sealing resin layer is not particularly limited as long as it is a resin conventionally used for optical semiconductor sealing, and examples thereof include thermosetting transparent resins such as silicone resins and epoxy resins. It can be used in combination of two or more species. Of these, silicone resins are preferred from the viewpoints of heat resistance and light resistance. These resins may be commercial products or may be synthesized according to known methods.

また、本発明においては、光拡散性を向上させる観点から、封止樹脂層に光拡散粒子を分散させてもよい。   In the present invention, light diffusing particles may be dispersed in the sealing resin layer from the viewpoint of improving light diffusibility.

光拡散粒子としては、例えば、シリカ、チタニア、アルミナ等の透明な無機微粒子が挙げられる。なかでも、屈折率が高くなるほど拡散効果が大きくなるので、屈折率が好ましくは1.4以上の無機微粒子、例えば、シリカ微粒子が好ましい。   Examples of the light diffusing particles include transparent inorganic fine particles such as silica, titania, and alumina. Among these, since the diffusion effect increases as the refractive index increases, inorganic fine particles having a refractive index of preferably 1.4 or more, for example, silica fine particles are preferable.

光拡散粒子の平均粒子径は、後方光散乱損失を抑制する観点から、0.5〜60μmが好ましく、1.0〜50μmがより好ましい。また、光拡散粒子の形状は、光拡散による光損失を抑制するために球形であることが好ましい。なお、本明細書において、粒子の平均粒子径は、後述の実施例に記載の方法により測定することができる。   The average particle diameter of the light diffusing particles is preferably 0.5 to 60 μm, more preferably 1.0 to 50 μm, from the viewpoint of suppressing backward light scattering loss. The shape of the light diffusing particles is preferably spherical in order to suppress light loss due to light diffusion. In addition, in this specification, the average particle diameter of particle | grains can be measured by the method as described in the below-mentioned Example.

封止樹脂層における光拡散粒子の含有量は、好ましくは1重量%以上、より好ましくは10重量%以上であると放熱性が向上する。また、好ましくは70重量%以下、より好ましくは60重量%以下であると封止樹脂層の透明性が優れる。従って、封止樹脂層における光拡散粒子の含有量は1〜70重量%が好ましく、10〜60重量%がより好ましい。   When the content of the light diffusing particles in the sealing resin layer is preferably 1% by weight or more, more preferably 10% by weight or more, the heat dissipation is improved. Further, the transparency of the sealing resin layer is excellent when it is preferably 70% by weight or less, more preferably 60% by weight or less. Accordingly, the content of the light diffusing particles in the sealing resin layer is preferably 1 to 70% by weight, and more preferably 10 to 60% by weight.

また、本発明における封止樹脂層は、前記以外に、硬化剤や硬化促進剤、さらに老化防止剤、変性剤、界面活性剤、染料、顔料、変色防止剤、紫外線吸収剤等の添加剤を含有することができる。   In addition to the above, the encapsulating resin layer in the present invention includes additives such as a curing agent, a curing accelerator, an anti-aging agent, a modifier, a surfactant, a dye, a pigment, a discoloration inhibitor, and an ultraviolet absorber. Can be contained.

封止樹脂層は、市販品であっても、公知の方法に従って合成したものであってもよいが、例えば、前記構成樹脂が液状である場合、光半導体装置の製造時に、LEDチップを封止加工する際の加熱によって、該構成樹脂、必要により光拡散粒子を分散させた構成樹脂を層状に成型して封止樹脂層としてもよい。   The sealing resin layer may be a commercially available product or may be synthesized according to a known method. For example, when the constituent resin is liquid, the LED chip is sealed at the time of manufacturing the optical semiconductor device. The sealing resin layer may be formed by forming the constituent resin and, if necessary, the constituent resin in which the light diffusing particles are dispersed into layers by heating during processing.

封止樹脂層の厚みは、耐熱性とLEDチップの封止性の観点から、300〜5000μmが好ましく、500〜3000μmがより好ましい。   The thickness of the sealing resin layer is preferably 300 to 5000 μm, more preferably 500 to 3000 μm, from the viewpoints of heat resistance and LED chip sealing properties.

図1における3は無機高熱伝導層を示し、無機高熱伝導層とは、無機材料により構成される高い熱伝導性を示す層を意味し、本質的には、高い熱伝導性を示す無機材料からなる熱伝導性層のことである。   1 in FIG. 1 indicates an inorganic high thermal conductive layer, and the inorganic high thermal conductive layer means a layer having high thermal conductivity composed of an inorganic material, and essentially consists of an inorganic material having high thermal conductivity. It is a heat conductive layer.

無機高熱伝導層を構成する無機材料としては、高い熱伝導性を示すものであれば特に限定はなく、例えば、アルミン酸イットリウム(YAG、Ce等の賦活剤非含有)、ガラス等の透光性セラミックスが挙げられる。   The inorganic material constituting the inorganic high thermal conductive layer is not particularly limited as long as it exhibits high thermal conductivity. For example, yttrium aluminate (not containing an activator such as YAG and Ce), translucency such as glass, etc. Ceramics may be mentioned.

前記無機材料により構成される層は、市販品であっても、公知の方法に従って合成したものでもよい。例えば、所望の無機材料に、バインダー樹脂、分散剤、焼結助剤等の添加剤を添加し、溶媒の存在下で湿式混合して、スラリー溶液を調製後、得られたスラリー溶液を成型し、加熱焼結することにより作製することができる。前記バインダー樹脂、分散剤、及び焼結助剤等の添加剤としては、加熱焼結により分解除去されるものであれば、当該分野で公知のものを特に限定なく用いることができる。また、本発明の効果が損なわれない範囲であれば、熱伝導層に前記原料が混入していてもよいが、加熱焼結により完全に除去される方が好ましい。   The layer composed of the inorganic material may be a commercially available product or may be synthesized according to a known method. For example, additives such as a binder resin, a dispersant, and a sintering aid are added to a desired inorganic material, wet-mixed in the presence of a solvent to prepare a slurry solution, and then the resulting slurry solution is molded. It can be produced by heating and sintering. As the additive such as the binder resin, the dispersant, and the sintering aid, those known in the art can be used without particular limitation as long as they are decomposed and removed by heat sintering. Moreover, as long as the effect of this invention is not impaired, the said raw material may be mixed in the heat conductive layer, However, It is more preferable to remove completely by heat sintering.

無機高熱伝導層の厚みは、放熱性の観点から、10〜1000μmが好ましく、30〜800μmがより好ましい。   The thickness of the inorganic high heat conductive layer is preferably 10 to 1000 μm, more preferably 30 to 800 μm, from the viewpoint of heat dissipation.

得られた無機高熱伝導層の熱伝導率は、光半導体装置の放熱性につながることから、1W/mK以上が好ましく、10W/mK以上がより好ましい。   The thermal conductivity of the obtained inorganic high thermal conductive layer is preferably 1 W / mK or more, and more preferably 10 W / mK or more because it leads to heat dissipation of the optical semiconductor device.

なお、本発明においては、無機高熱伝導層を構成する無機材料の全体的な使用量を低減する観点から、光半導体装置の大きさによって一概には言えないが、前記無機高熱伝導層を、例えば、好ましくは2〜20mm×2〜20mm(角)×0.05〜1mm(高)、より好ましくは5〜15mm×5〜15mm(角)×0.10〜0.8mm(高)に切断したものを用いてもよい。   In the present invention, from the viewpoint of reducing the overall amount of the inorganic material constituting the inorganic high heat conductive layer, although it cannot be said unconditionally depending on the size of the optical semiconductor device, the inorganic high heat conductive layer is, for example, In addition, preferably 2 to 20 mm x 2 to 20 mm (square) x 0.05 to 1 mm (high), more preferably 5 to 15 mm x 5 to 15 mm (square) x 0.10 to 0.8 mm (high) Good.

図1における4は、無機蛍光体粉末を含有する波長変換層を示す。波長変換層が封止部の最外層にあるために、本発明の光半導体装置は、LEDチップからの光取り出し効率を高くすることができる。   1 in FIG. 1 indicates a wavelength conversion layer containing inorganic phosphor powder. Since the wavelength conversion layer is in the outermost layer of the sealing portion, the optical semiconductor device of the present invention can increase the light extraction efficiency from the LED chip.

波長変換層を構成する樹脂としては、前記封止樹脂層を構成する樹脂と同じものが例示される。なかでも、耐熱性及び耐光性の観点から、シリコーン樹脂が好ましい。なお、これらの樹脂は市販品であっても、公知の方法に従って合成したものでもよい。   Examples of the resin constituting the wavelength conversion layer include the same resins as those constituting the sealing resin layer. Of these, silicone resins are preferred from the viewpoints of heat resistance and light resistance. These resins may be commercial products or may be synthesized according to known methods.

無機蛍光体としては、LEDチップからの発光を、その波長より長波長を有する光に変換することができるものであれば特に限定はなく、従来から光半導体装置に用いられる公知の蛍光体を用いることができる。具体的には、青色を黄色に変換する機能を有する好適な市販の蛍光体として、YAG、TAG、α-サイアロン等が例示される。   The inorganic phosphor is not particularly limited as long as it can convert light emitted from the LED chip into light having a wavelength longer than the wavelength, and a known phosphor conventionally used in optical semiconductor devices is used. be able to. Specifically, YAG, TAG, α-sialon and the like are exemplified as suitable commercially available phosphors having a function of converting blue to yellow.

無機蛍光体粉末としては、前記無機蛍光体が粉末状を呈しているのであれば特に限定はないが、蛍光体の量子効率や光散乱性の観点から、該粉末の平均粒子径としては、0.1〜200μmが好ましく、1〜50μmがより好ましい。   The inorganic phosphor powder is not particularly limited as long as the inorganic phosphor is in a powder form, but from the viewpoint of the quantum efficiency and light scattering property of the phosphor, the average particle diameter of the powder is 0.1 ˜200 μm is preferable, and 1 to 50 μm is more preferable.

波長変換層における無機蛍光体粉末の含有量は、蛍光体の種類及び波長変換層の厚みによって白色化の程度が異なることから一概には決定されないが、1〜70重量%が好ましく、10〜60重量%がより好ましい。   The content of the inorganic phosphor powder in the wavelength conversion layer is not generally determined because the degree of whitening varies depending on the type of phosphor and the thickness of the wavelength conversion layer, but is preferably 1 to 70% by weight, 10 to 60 Weight percent is more preferred.

また、本発明における波長変換層は、前記以外に、硬化剤や硬化促進剤、さらに老化防止剤、変性剤、界面活性剤、染料、顔料、変色防止剤、紫外線吸収剤等の添加剤を含有することができる。   In addition to the above, the wavelength conversion layer in the present invention contains additives such as a curing agent, a curing accelerator, an anti-aging agent, a modifier, a surfactant, a dye, a pigment, a discoloration inhibitor, and an ultraviolet absorber. can do.

波長変換層は、市販品であっても、公知の方法に従って合成したものを用いてもよい。例えば、前記無機蛍光体粉末を含有する樹脂溶液を、表面を剥離処理した離型シート(例えば、ポリエチレン基材)の上に、アプリケーター等を用いて適当な厚みに塗工し、任意の温度で加熱して乾燥することにより成形して、波長変換層とすることができる。   The wavelength conversion layer may be a commercially available product or may be synthesized according to a known method. For example, the resin solution containing the inorganic phosphor powder is coated on a release sheet (for example, a polyethylene base material) whose surface is peeled off to an appropriate thickness using an applicator or the like, and at an arbitrary temperature. A wavelength conversion layer can be formed by heating and drying.

波長変換層の厚みは、放熱性の観点から、50〜1000μmが好ましく、100〜300μmがより好ましい。   The thickness of the wavelength conversion layer is preferably 50 to 1000 μm and more preferably 100 to 300 μm from the viewpoint of heat dissipation.

また、波長変換層面積としては、2〜20mm×2〜20mm(角)が好ましく、5〜15mm×5〜15mm(角)がより好ましい。なお、本発明において、封止樹脂層、無機高熱伝導層、及び、波長変換層は、それぞれの厚みは異なっていてもよいが、大きさ(面積)は同じであることが好ましい。   The area of the wavelength conversion layer is preferably 2 to 20 mm × 2 to 20 mm (square), and more preferably 5 to 15 mm × 5 to 15 mm (square). In the present invention, the sealing resin layer, the inorganic high thermal conductive layer, and the wavelength conversion layer may have different thicknesses, but preferably have the same size (area).

このように、本発明の光半導体装置は前記構成を有するが、次に、本発明の光半導体装置の製造方法について図2を用いて説明する。よって、本発明は、また、本発明の光半導体装置の製造方法を提供する。   As described above, the optical semiconductor device of the present invention has the above-described configuration. Next, a method for manufacturing the optical semiconductor device of the present invention will be described with reference to FIG. Therefore, the present invention also provides a method for manufacturing an optical semiconductor device of the present invention.

先ず、凹型金型内に封止部を設置する(図2の左図参照)。即ち、凹型金型底部に、波長変換層と無機高熱伝導層をこの順に形成する。この際、波長変換層と無機高熱伝導層は、予め、それぞれ層状に調製したものを凹型金型底部の大きさになるようサイズ調整してから載置しても、波長変換層の構成樹脂溶液を凹型金型底部に注入して加熱乾燥することにより波長変換層を形成後に別途調製した無機高熱伝導層を積層してもよい。その後、設置された無機高熱伝導層の上に、例えば、封止樹脂層の構成樹脂が液状である場合、該構成樹脂溶液を、必要により、光拡散粒子を分散させた後に充填する。   First, a sealing part is installed in the concave mold (see the left figure in FIG. 2). That is, the wavelength conversion layer and the inorganic high thermal conductive layer are formed in this order on the bottom of the concave mold. At this time, even if the wavelength conversion layer and the inorganic high thermal conductive layer are each prepared in advance in the form of a layer, the size is adjusted to the size of the bottom of the concave mold, and then placed, the resin solution for constituting the wavelength conversion layer An inorganic high thermal conductive layer prepared separately may be laminated after forming the wavelength conversion layer by injecting into the bottom of the concave mold and drying by heating. Thereafter, when the constituent resin of the sealing resin layer is in a liquid state, for example, the constituent resin solution is filled after dispersing the light diffusing particles as necessary.

次に、LEDチップが実装された基板を、充填された封止樹脂層とLEDチップが対向するように載置した後、封止加工する(図2の中図参照)。封止加工の加熱温度は、80〜200℃が好ましく、80〜150℃がより好ましい。加熱時間は、0.5〜10分が好ましく、0.5〜5分がより好ましい。なお、封止樹脂層への気泡の混入を防止する観点から、前記封止加工の作業は減圧下で行うことができる。   Next, the substrate on which the LED chip is mounted is placed so that the filled sealing resin layer and the LED chip face each other, and then sealed (see the middle diagram of FIG. 2). The heating temperature for the sealing process is preferably 80 to 200 ° C, and more preferably 80 to 150 ° C. The heating time is preferably 0.5 to 10 minutes, more preferably 0.5 to 5 minutes. From the viewpoint of preventing air bubbles from entering the sealing resin layer, the sealing process can be performed under reduced pressure.

その後、成型されたパッケージは、室温下においても形状が変化しなくなるまで、放置後、金型をはずすことにより、本発明の光半導体装置が得られる(図2の右図参照)。なお、封止樹脂層の硬化に必要な時間まで加温加圧してポストキュアを行ってもよい。   Thereafter, the molded package is allowed to stand until the shape does not change even at room temperature, and then the mold is removed to obtain the optical semiconductor device of the present invention (see the right diagram in FIG. 2). In addition, you may post-cure by heating and pressurizing to the time required for hardening of the sealing resin layer.

かくして得られた本発明の光半導体装置は、可視光域380〜780nmの入射光に対する光透過率が90%以上であるために、無機高熱伝導層を積層していても、白色LED装置としての輝度低下がなく好ましい。   The optical semiconductor device of the present invention thus obtained has a light transmittance of 90% or more with respect to incident light in the visible light range of 380 to 780 nm. Therefore, even if an inorganic high thermal conductive layer is laminated, it can be used as a white LED device. It is preferable because there is no decrease in luminance.

以下、本発明を実施例、比較例及び参考例に基づいて説明するが、本発明はこれらの実施例等によりなんら限定されるものではない。   EXAMPLES Hereinafter, although this invention is demonstrated based on an Example, a comparative example, and a reference example, this invention is not limited at all by these Examples.

〔光拡散粒子及び無機蛍光体の平均粒子径〕
光拡散粒子及び無機蛍光体の平均粒子径とは、光拡散粒子及び無機蛍光体の一次粒子の平均粒子径のことであり、透過型電子顕微鏡TEMにて、画像に映った粒子100個の直径を測定し、それらの平均値を平均粒子径とする。
[Average particle diameter of light diffusing particles and inorganic phosphor]
The average particle size of the light diffusing particles and the inorganic phosphor is the average particle size of the primary particles of the light diffusing particles and the inorganic phosphor, and the diameter of 100 particles shown in the image by a transmission electron microscope TEM. Are measured and the average value thereof is taken as the average particle diameter.

実施例1
(波長変換層)
市販のシリコーンエラストマー(LR7665、旭化成ワッカーシリコーン社製)に、セリウム賦活YAG:Ce3+(平均粒子径9μm)を26重量%となるよう配合して混合したものを、PETフィルム(厚み50μm)の上に、アプリケーターを用いて厚み100μmに塗工し、100℃で5分加熱することにより成形した。得られた成形体は、抜型成形装置を用いて、8mm×8mmサイズ(厚み約100μm)の小片に切り出して、波長変換層を作製した。
Example 1
(Wavelength conversion layer)
A commercially available silicone elastomer (LR7665, manufactured by Asahi Kasei Wacker Silicone) was mixed with cerium activated YAG: Ce 3+ (average particle size 9 μm) so as to be 26% by weight. On top, it was coated to a thickness of 100 μm using an applicator and molded by heating at 100 ° C. for 5 minutes. The obtained molded body was cut into small pieces having a size of 8 mm × 8 mm (thickness: about 100 μm) using a die-molding apparatus to produce a wavelength conversion layer.

(無機高熱伝導層)
アルミン酸イットリウム(YAG)(平均粒子径9μm)に、該無機材料の重量が20重量%となるように、バインダー樹脂としてのポリビニルアルコールを添加し、さらにイソプロピルアルコールを適量添加して、スラリー状溶液を調製した。次いで、得られたスラリー状溶液を成形後、焼結後の厚みが500μmになるように、1000℃で5時間加熱焼結して、無機高熱伝導層を作製した。なお、得られた無機高熱伝導層は、十分に冷めた後に、抜型成形装置を用いて8mm×8mmサイズに切断加工した。
(Inorganic high thermal conductivity layer)
Polyvinyl alcohol as a binder resin is added to yttrium aluminate (YAG) (average particle diameter 9 μm) so that the weight of the inorganic material is 20% by weight, and an appropriate amount of isopropyl alcohol is added to form a slurry solution. Was prepared. Next, the obtained slurry-like solution was molded and then heated and sintered at 1000 ° C. for 5 hours so that the thickness after sintering was 500 μm, thereby preparing an inorganic high thermal conductive layer. The obtained inorganic high thermal conductive layer was sufficiently cooled and then cut into a size of 8 mm × 8 mm using a die-molding apparatus.

(光半導体装置)
凹型金型(底面8×8mm、高さ1.1mm)の底部に、前記で得られた波長変換層と無機高熱伝導層をこの順に載置し、その上に、封止樹脂層として、市販のシリコーンエラストマー(LR7665)に溶融シリカ粒子(FB-40S、電気化学工業社製、平均粒子径40μm)を50重量%となるよう配合して混合したものを充填した。その上から、青色LEDチップ(1mm×1mm×0.17mm高)が実装された基板を、充填された樹脂とLEDチップが対向するように載置した後、160℃で5分加熱して封止加工する。その後、室温下においても形状が変化しなくなるまで放置した後、金型をはずして光半導体装置を作製した。
(Optical semiconductor device)
On the bottom of the concave mold (bottom 8 × 8 mm, height 1.1 mm), the wavelength conversion layer and the inorganic high thermal conductive layer obtained above were placed in this order, and as a sealing resin layer, a commercially available sealing resin layer was placed thereon. A silicone elastomer (LR7665) was mixed and mixed with 50% by weight of fused silica particles (FB-40S, manufactured by Denki Kagaku Kogyo Co., Ltd., average particle size: 40 μm). After that, the substrate on which the blue LED chip (1mm x 1mm x 0.17mm height) was mounted was placed so that the filled resin and the LED chip face each other, and then heated at 160 ° C for 5 minutes for sealing Process. Thereafter, the substrate was left until the shape did not change even at room temperature, and then the mold was removed to produce an optical semiconductor device.

実施例2
実施例1において、無機高熱伝導層を以下に示すものに変更する以外は、実施例1と同様にして光半導体装置を作製した。
Example 2
In Example 1, an optical semiconductor device was produced in the same manner as in Example 1 except that the inorganic high thermal conductive layer was changed to the one shown below.

(無機高熱伝導層)
ガラス(平均粒子径5μm)に、該無機材料の重量が20重量%となるように、バインダー樹脂としてのポリビニルアルコールを添加し、さらにイソプロピルアルコールを適量添加して、スラリー状溶液を調製した。次いで、得られたスラリー状溶液を成形後、焼結後の厚みが35μmになるように、800℃で5時間加熱焼結して、無機高熱伝導層を作製した。なお、得られた無機高熱伝導層は、十分に冷めた後に、抜型成形装置を用いて8mm×8mmサイズに切断加工した。
(Inorganic high thermal conductivity layer)
Polyvinyl alcohol as a binder resin was added to glass (average particle size 5 μm) so that the weight of the inorganic material was 20% by weight, and an appropriate amount of isopropyl alcohol was added to prepare a slurry solution. Next, the obtained slurry-like solution was molded and then heated and sintered at 800 ° C. for 5 hours so that the thickness after sintering was 35 μm, thereby preparing an inorganic high thermal conductive layer. The obtained inorganic high thermal conductive layer was sufficiently cooled and then cut into a size of 8 mm × 8 mm using a die-molding apparatus.

実施例3
実施例1において、封止樹脂層に溶融シリカ粒子を配合しない以外は、実施例1と同様にして光半導体装置を作製した。
Example 3
In Example 1, an optical semiconductor device was produced in the same manner as in Example 1 except that the fused silica particles were not blended in the sealing resin layer.

実施例4
実施例2において、封止樹脂層に溶融シリカ粒子を配合しない以外は、実施例2と同様にして光半導体装置を作製した。
Example 4
In Example 2, an optical semiconductor device was produced in the same manner as in Example 2 except that no fused silica particles were blended in the sealing resin layer.

実施例5
実施例1において、無機高熱伝導層の厚みを500μmから300μmに変更する以外は、実施例1と同様にして光半導体装置を作製した。
Example 5
In Example 1, an optical semiconductor device was produced in the same manner as in Example 1 except that the thickness of the inorganic high thermal conductive layer was changed from 500 μm to 300 μm.

比較例1
実施例1において、無機高熱伝導層を使用しない以外は、実施例1と同様にして光半導体装置を作製した。
Comparative Example 1
In Example 1, an optical semiconductor device was produced in the same manner as in Example 1 except that the inorganic high thermal conductive layer was not used.

比較例2
実施例1において、無機高熱伝導層を用いるかわりに、以下に示す低熱伝導層に変更する以外は、実施例1と同様にして光半導体装置を作製した。
Comparative Example 2
In Example 1, an optical semiconductor device was fabricated in the same manner as in Example 1 except that the inorganic high thermal conductive layer was used instead of the low thermal conductive layer shown below.

(無機低熱伝導層)
市販のシリコーンエラストマー(LR7665)を、PETフィルム(厚み50μm)の上に、アプリケーターを用いて厚み100μmに塗工し、150℃で5分加熱することにより成形した後、抜型成形装置を用いて、8mm×8mmサイズ(厚み約100μm)の小片に切り出して、無機低熱伝導層とした。
(Inorganic low thermal conductive layer)
A commercially available silicone elastomer (LR7665) was coated on a PET film (thickness 50 μm) using an applicator to a thickness of 100 μm and heated by heating at 150 ° C. for 5 minutes. It was cut into a small piece of 8 mm × 8 mm size (thickness: about 100 μm) to form an inorganic low thermal conductive layer.

参考例1
実施例1において、無機高熱伝導層及び波長変換層を使用しない以外は、実施例1と同様にして光半導体装置(封止樹脂層のみを有する光半導体装置)を作製した。
Reference example 1
In Example 1, an optical semiconductor device (an optical semiconductor device having only a sealing resin layer) was produced in the same manner as in Example 1 except that the inorganic high thermal conductive layer and the wavelength conversion layer were not used.

得られた半導体装置について、以下の試験例1〜3に従って、特性を評価した。結果を表1〜2に示す。   About the obtained semiconductor device, the characteristic was evaluated according to the following test examples 1-3. The results are shown in Tables 1-2.

試験例1(最大温度)
非接触放射温度計(株式会社チノー製)を用いて、投入電流1Aにおける光半導体装置の最大温度を測定した。
Test example 1 (maximum temperature)
The maximum temperature of the optical semiconductor device at an input current of 1 A was measured using a non-contact radiation thermometer (manufactured by Chino Corporation).

試験例2(刺激値Y、xy色度)
瞬間マルチ測光システム(MCPD-3000、大塚電子社製)を用いて、投入電流1Aにおける光半導体装置の刺激値Y、XYZ表色系におけるxy色度図(CIE1931)を測定した。刺激値Yは、光半導体装置の輝度の指標であり、投入電流1Aにおいては、18000以上であると輝度に優れることを示す。
Test example 2 (stimulus value Y, xy chromaticity)
Using an instantaneous multi-photometry system (MCPD-3000, manufactured by Otsuka Electronics Co., Ltd.), the stimulus value Y of the optical semiconductor device at an input current of 1 A and the xy chromaticity diagram (CIE1931) in the XYZ color system were measured. The stimulus value Y is an index of the luminance of the optical semiconductor device, and indicates that when the input current 1A is 18000 or more, the luminance is excellent.

試験例3(光透過性)
紫外可視スペクトル測定器(U4100、日立社製)を用いて、波長560nmに対する光透過率を測定して、光透過性を評価した。
Test Example 3 (Light transmittance)
The light transmittance was evaluated by measuring the light transmittance for a wavelength of 560 nm using an ultraviolet-visible spectrum measuring instrument (U4100, manufactured by Hitachi).

結果、実施例の光半導体装置は、高熱伝導層が設置されていない比較例1、あるいは、低熱伝導層を有する比較例2の光半導体装置に比べて、1A投入時の最大温度が大幅に低いものであった。これより、波長変換層で発生した熱は、高熱伝導層に熱伝導して放熱されていることが分かる。また、実施例1と参考例1は1A投入時の最大温度がほぼ同じであることから、実施例1の装置においては、波長変換層で発生した熱がほぼ全量熱伝導して放熱されたものと示唆される。さらに、実施例1〜5の光半導体装置は、熱伝導層が透明であるために、色度や輝度の低下が認められない。   As a result, the optical semiconductor device of the example has a significantly lower maximum temperature at the time of 1A input than the optical semiconductor device of Comparative Example 1 in which no high thermal conductive layer is installed or Comparative Example 2 having a low thermal conductive layer. It was a thing. From this, it can be seen that the heat generated in the wavelength conversion layer is radiated by heat conduction to the high thermal conduction layer. In addition, since Example 1 and Reference Example 1 have almost the same maximum temperature when 1A is charged, in the apparatus of Example 1, almost all of the heat generated in the wavelength conversion layer is conducted and dissipated. It is suggested. Furthermore, in the optical semiconductor devices of Examples 1 to 5, since the heat conductive layer is transparent, no decrease in chromaticity or luminance is recognized.

なお、本発明の態様として、以下のものが挙げられる。
〔1〕 LEDチップが実装されてなる基板、該LEDチップを埋設してなる封止樹脂層、無機高熱伝導層、及び無機蛍光体粉末を含有する波長変換層を具備してなる光半導体装置であって、前記基板上に、封止樹脂層、無機高熱伝導層、及び波長変換層が、直接又は間接的に、この順に積層されてなる光半導体装置。
〔2〕 無機高熱伝導層がアルミン酸イットリウム(YAG)からなる層である、前記〔1〕記載の光半導体装置。
〔3〕 無機高熱伝導層がガラスからなる層である、前記〔2〕記載の光半導体装置。
〔4〕 封止樹脂層がシリカ微粒子を含有してなる、前記〔1〕〜〔3〕いずれか記載の光半導体装置。
〔5〕 無機高熱伝導層の熱伝導率が1.0W/mK以上である、前記〔1〕〜〔4〕いずれか記載の光半導体装置。
〔6〕 凹型金型内に、波長変換層と無機高熱伝導層をこの順に形成し、該無機高熱伝導層の上に封止樹脂を充填後、LEDチップが実装された基板を該封止樹脂内に埋設して、封止加工することを特徴とする、光半導体装置の製造方法。
In addition, the following are mentioned as an aspect of this invention.
[1] An optical semiconductor device comprising a substrate on which an LED chip is mounted, a sealing resin layer in which the LED chip is embedded, an inorganic high thermal conductive layer, and a wavelength conversion layer containing inorganic phosphor powder. An optical semiconductor device in which a sealing resin layer, an inorganic high thermal conductive layer, and a wavelength conversion layer are directly or indirectly laminated in this order on the substrate.
[2] The optical semiconductor device according to [1], wherein the inorganic high thermal conductive layer is a layer made of yttrium aluminate (YAG).
[3] The optical semiconductor device according to [2], wherein the inorganic high thermal conductive layer is a layer made of glass.
[4] The optical semiconductor device according to any one of [1] to [3], wherein the sealing resin layer contains silica fine particles.
[5] The optical semiconductor device according to any one of [1] to [4], wherein the inorganic high thermal conductive layer has a thermal conductivity of 1.0 W / mK or more.
[6] A wavelength conversion layer and an inorganic high thermal conductive layer are formed in this order in a concave mold, and a sealing resin is filled on the inorganic high thermal conductive layer, and then a substrate on which an LED chip is mounted is the sealing resin. A method for manufacturing an optical semiconductor device, wherein the method is embedded and sealed.

本発明の光半導体装置は、例えば、LEDを発光源とする一般照明器具、ディスプレイのバックライト、自動車のヘッドライト等ハイパワー用途に好適に用いられる。   The optical semiconductor device of the present invention is suitably used for high power applications such as general lighting fixtures using LEDs as light sources, display backlights, automobile headlights, and the like.

1 LEDチップが実装された基板
2 LEDチップを埋設可能な封止樹脂層
3 無機高熱伝導層
4 無機蛍光体粉末を含有する波長変換層
5 凹型金型
DESCRIPTION OF SYMBOLS 1 Board | substrate with which LED chip was mounted 2 Sealing resin layer 3 which can embed LED chip Inorganic high thermal conductive layer 4 Wavelength conversion layer 5 containing inorganic fluorescent substance powder Recessed mold

Claims (6)

LEDチップが実装されてなる平板状の基板、該LEDチップを埋設してなる封止樹脂層、無機高熱伝導層、及び無機蛍光体粉末を含有する波長変換層を具備してなる光半導体装置であって、前記基板上に、封止樹脂層、無機高熱伝導層、及び波長変換層が、直接又は間接的に、この順に積層されてなり、かつ、前記無機高熱伝導層の厚みが10〜1000μmである光半導体装置。   An optical semiconductor device comprising a flat substrate on which an LED chip is mounted, a sealing resin layer in which the LED chip is embedded, an inorganic high thermal conductive layer, and a wavelength conversion layer containing inorganic phosphor powder. The sealing resin layer, the inorganic high thermal conductive layer, and the wavelength conversion layer are directly or indirectly laminated in this order on the substrate, and the thickness of the inorganic high thermal conductive layer is 10 to 1000 μm. An optical semiconductor device. 無機高熱伝導層がアルミン酸イットリウム(YAG)からなる層である、請求項1記載の光半導体装置。   The optical semiconductor device according to claim 1, wherein the inorganic high thermal conductive layer is a layer made of yttrium aluminate (YAG). 無機高熱伝導層がガラスからなる層である、請求項1記載の光半導体装置。   The optical semiconductor device according to claim 1, wherein the inorganic high thermal conductive layer is a layer made of glass. 封止樹脂層がシリカ微粒子を含有してなる、請求項1〜3いずれか記載の光半導体装置。   The optical semiconductor device according to claim 1, wherein the sealing resin layer contains silica fine particles. 無機高熱伝導層の熱伝導率が1.0W/mK以上である、請求項1〜4いずれか記載の光半導体装置。   The optical semiconductor device according to any one of claims 1 to 4, wherein the inorganic high thermal conductive layer has a thermal conductivity of 1.0 W / mK or more. 封止樹脂層、無機高熱伝導層、及び波長変換層の面積が同じである、請求項1〜5いずれか記載の光半導体装置。   The optical semiconductor device according to any one of claims 1 to 5, wherein the sealing resin layer, the inorganic high thermal conductive layer, and the wavelength conversion layer have the same area.
JP2015046715A 2015-03-10 2015-03-10 optical semiconductor device Pending JP2015144301A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015046715A JP2015144301A (en) 2015-03-10 2015-03-10 optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015046715A JP2015144301A (en) 2015-03-10 2015-03-10 optical semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2010279496A Division JP5733743B2 (en) 2010-12-15 2010-12-15 Optical semiconductor device

Publications (1)

Publication Number Publication Date
JP2015144301A true JP2015144301A (en) 2015-08-06

Family

ID=53889117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015046715A Pending JP2015144301A (en) 2015-03-10 2015-03-10 optical semiconductor device

Country Status (1)

Country Link
JP (1) JP2015144301A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327623A (en) * 2003-04-23 2004-11-18 Three M Innovative Properties Co Film adhesive for sealing, film laminate for sealing and method for sealing
JP2009094207A (en) * 2007-10-05 2009-04-30 Sharp Corp Light emitting device
JP2010123802A (en) * 2008-11-20 2010-06-03 Nitto Denko Corp Sealing sheet for optical semiconductor
WO2010123052A1 (en) * 2009-04-22 2010-10-28 シーシーエス株式会社 Light-emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327623A (en) * 2003-04-23 2004-11-18 Three M Innovative Properties Co Film adhesive for sealing, film laminate for sealing and method for sealing
JP2009094207A (en) * 2007-10-05 2009-04-30 Sharp Corp Light emitting device
JP2010123802A (en) * 2008-11-20 2010-06-03 Nitto Denko Corp Sealing sheet for optical semiconductor
WO2010123052A1 (en) * 2009-04-22 2010-10-28 シーシーエス株式会社 Light-emitting device

Similar Documents

Publication Publication Date Title
JP5733743B2 (en) Optical semiconductor device
JP5744386B2 (en) Optical semiconductor encapsulant
Li et al. Study on the thermal and optical performance of quantum dot white light-emitting diodes using metal-based inverted packaging structure
US8890196B2 (en) Lightweight self-cooling light sources
WO2014122888A1 (en) Light-emitting module
TWI649903B (en) Slice white light emitting diode, preparing chip white light emitting diode Body method and package adhesive
JP2008041706A (en) Light emitting device, and white color conversion sheet
JP2013149588A (en) Solid illumination device
JP2007165787A (en) Light emitting device and method for manufacturing the same
JP2011119292A (en) Light-emitting device (cob module)
US20140376223A1 (en) Light source with led chip and luminophore layer
CN103456726B (en) LED package, LED display, and method of manufacturing LED package
JP2011228525A (en) Optical semiconductor device
JP2011082339A (en) Kit for optical semiconductor encapsulation
TW201721053A (en) Shell integrated light-emitting diode, assembly and manufacturing method thereof
KR20090002281A (en) Light emitting diode module with enhanced heat release for lumination
ur Rahman et al. An Emerging White LED Technology and associated Thermal Issues–A Review
JP2011159770A (en) White-light emitting semiconductor device
TWM570533U (en) Light emitting diode array package with enhanced heat dissipation effect
JP2015144301A (en) optical semiconductor device
TWI512235B (en) Illuminant device
KR102019501B1 (en) Phosphor and light emitting device having thereof
Chen Cost-Effective White LED Lighting Backlighting Sources by Optimization of Packaging Materials and Processes
KR20080092001A (en) Light emitting diode module for illumination
Sher et al. Enhancement of luminous efficiency by hybrid structure for warm white light-emitting diodes

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20151228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160126

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160317

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20160829