JP2014522799A - Deposition cartridge for material production by chemical vapor deposition - Google Patents

Abstract

  An electrically heated deposition cartridge used to produce a material by chemical vapor deposition, wherein (i) a higher surface area to volume ratio than a seed rod and (ii) a higher than a seed rod A precipitation cartridge having a ratio of the effective effective precipitation surface area to the effective precipitation surface area and (iii) a ratio of the effective precipitation surface area to the total surface area that is higher than the basic precipitation plate, the ratios of all of the precipitation cartridges being Achieved by reaching and maintaining the desired temperature on the desired surface, which is achieved by distributing the desired amount of current across the desired cross-sectional area of the deposition cartridge. A deposition cartridge is provided.

Description

  The present invention relates to an electrically heated deposition cartridge for use in producing materials by chemical vapor deposition.

No. 12 / 597,151 filed Oct. 22, 2009 (“'151 patent application”, “Deposition of high-purity silicon via high-surface-area gas-solid or gas-”). "Liquid interfaces and recovery via liquid phase" is incorporated by reference in its entirety. number Are added when notified), which is also incorporated by reference in its entirety. This application further includes US Provisional Application No. 6154148 (“'148 Patent Provisional Application”) filed July 1, 2011, “deposition cartridge for production of high-quality amorphous and crystalline 20”. U.S. Provisional Application No. 6154145 (filed “'145 Patent Provisional Application”) filed July 1, “Cartridge Reactor for Production-Purpose Amorphous and Crystalline Silicon and Others” This shall be incorporated herein in their entirety. . In the '151 patent application, the term “deposition plate” is defined as the surface on which silicon is deposited, but for clarity in describing the actual physical components in this patent application, “ The “deposition surface” is defined as the surface on which the material is deposited, and the “deposition plate” is the actual physical layer on which the material is deposited, preferably on both sides and on one or more edges. It is defined as a flat plate (an object having a fairly large surface area on both sides compared to its edges). Thus, both sides and edges of the precipitation plate are precipitation surfaces. The term “deposition cartridge” is defined as a combination of a distribution rod and a single plate deposition plate, or a single serpentine pattern deposition plate, either of which can incorporate an insulating layer or spacer. The term “Siemens reactor” is defined as a deposition reactor that is originally designed to use a seed rod.

The '151 patent application describes the limitations of the Siemens reactor, including: That is,
1. The low average surface area of the polycrystalline silicon rod, which results in a low volume deposition rate, ie low Siemens reactor productivity (the amount of polycrystalline silicon produced during a given period, usually meters per year Measured by tons),
2. The low surface area to volume ratio of the polycrystalline silicon rod, which consumes a lot of energy to maintain the surface temperature necessary to achieve precipitation over the long time required to achieve a significant amount of precipitation Results in,
3. This is a characteristic that requires a lot of labor in the rod collection process and is easily mixed with impurities.

  The invention described in the '151 patent application overcomes the first two limitations described above by providing a high surface area, electrically heated deposition plate. Silicon is deposited at a high volumetric rate on these plates by a CVD process and then recovered by further heating the plates. By further heating, a very thin layer of polycrystalline silicon deposited at the interface of the plate is melted and the solid crust of deposited polycrystalline silicon can be peeled off the plate mechanically or by gravity. Using a large plate in a Siemens reactor increases the productivity of the reactor compared to the use of a traditional seed rod, while using a small plate produces the same production as using a seed rod The energy consumption of the reactor is reduced while maintaining the characteristics.

  However, the use of only the precipitation plate does not address the third limitation on the harvesting process and the characteristics of impurities that are prone to contamination. To overcome this limitation, the invention described in the '151 patent application further provides a new deposition reactor for use with plates that can be both deposited and recovered inside the reactor.

  Despite their significant advantages over conventional seed rods, the deposition plates described in the '151 patent application have some limitations by themselves. The '151 patent application lists a number of suitable materials that make up the deposition plates, such as tungsten, silicon nitride, silicon carbide, graphite, and alloys, composites, and mixtures thereof. States that the thickness can be several millimeters and the length and height can be several meters. The application further states that the plates are energized by connecting one end to the negative electrode and the other end to the positive electrode.

  Given such a configuration, it is difficult to distribute the current evenly across the entire cross-sectional area of the deposition plate due to a short circuit, thus achieving the uniform heating of the entire plate surface to the desired temperature. It is difficult to do. This short circuit is only promoted if the material deposited on the non-insulating surface of the deposition plate is a semiconductor such as polycrystalline silicon that becomes conductive at high temperatures. Thus, the effective precipitation surface area of the plate is less than the overall surface area of the plate (still much larger than the average precipitation surface area of the polycrystalline silicon rod). Since the deposition rate, i.e. the production rate, is proportional to the average deposition surface area, the production rate of reactors that can accept the large dimensions of these deposition plates will not be maximized because the ratio of the deposition surface area to the total surface area is not maximized. . Thus, a reactor operating at such a production rate will suffer from non-minimum production costs.

  The inability of the deposition plates to reach the optimum deposition temperature over their entire surface area also affects the crust recovery. There may be regions of the deposition plate that are less than the optimum deposition temperature but still reach a sufficiently high temperature to produce some crust formation. During crust recovery, it may not be possible to heat these regions of the precipitation plate to the melting temperature of the material or more quickly, resulting in excessive melting of the crust in the properly heated region. Or the crust is partially peeled off and collected. Finally, these deposition plates do not have a built-in mechanism that prevents deposition on a surface that can inhibit crust separation.

  The present invention provides an electrically heated deposition cartridge having a large deposition surface area comprised of a power distribution rod and a single plate deposition plate, or composed only of a serpentine deposition plate and can incorporate an electrically insulating layer or spacer. This overcomes the limitations of the deposition plate described above. A desired amount of current can be distributed across the desired cross-sectional area of the deposition cartridge, thereby achieving and maintaining the desired temperature on all desired surfaces of the deposition cartridge.

  It is possible to achieve the desired temperature on all desired surfaces by distributing the desired amount of current over the desired cross-sectional area and by appropriate insulation, relative to the total surface area of the deposition cartridge. Enabling the deposition cartridge to achieve a maximized effective surface area. This maximizes the productivity of reactors that can accommodate the overall dimensions of these deposition cartridges and thus minimizes their production costs. Because of the simultaneous heating characteristics of the deposition cartridge and selective heating in addition to external cooling, the deposition cartridge can limit the deposition on the obstructing surface, thereby simplifying the collection of material crusts.

  These deposition cartridges can be used in any quantity in any reactor, including a Siemens reactor, as an alternative to a seed rod and can be oriented in any direction, including vertical and / or horizontal. it can. The separation of the crust from the deposition cartridge by additional heating of the deposition cartridge so that a thin layer of the crust liquefies at the interface with the deposition cartridge first collects the deposition cartridge inside the reactor or the crust. Can be achieved either outside the reactor. The crust can then be completely separated from the deposition cartridge by applying any force, including gravity or mechanical force. The use of deposition cartridges and their benefits can affect all materials that can be produced by CVD methods, including but not limited to polycrystalline silicon.

FIG. 2 is an elevational and plan cross-sectional view of a preferred embodiment of a deposition cartridge having a single plate deposition plate and a distribution rod. FIG. 2 is an elevational and plan sectional view of a preferred embodiment of a deposition cartridge having a serpentine deposition plate. FIG. 2 is a sectional elevation and a plan view of a preferred embodiment of a deposition cartridge having a serpentine deposition plate and a relatively cold outer edge. FIG. 2 is an elevational and plan cross-sectional view of a preferred embodiment of a deposition cartridge having a serpentine deposition plate and a separate outer path. 1 is a perspective view of a preferred embodiment of a deposition cartridge for a crucible reactor. FIG. 1 is a perspective view of a preferred embodiment of a deposition cartridge for a Siemens reactor. FIG. 2 is a cross-sectional plan view of an 18-pair Siemens reactor with polycrystalline silicon rods at the beginning and end of the deposition process. FIG. 1 is a cross-sectional plan view of a preferred embodiment of an 18 pair Siemens reactor with a deposition cartridge. FIG. 1 is a sectional elevation view of a preferred embodiment of a deposition cartridge installed in a Siemens reactor. FIG. 1 is a cross-sectional plan view of a preferred embodiment of a deposition cartridge installed in a Siemens reactor. FIG. FIG. 2 is a front perspective cross-sectional view of a preferred embodiment of a deposition cartridge installed in a Siemens reactor. FIG. 2 is a sectional elevation view of a preferred embodiment of a U-shaped deposition cartridge installed in a Siemens reactor. 1 is a cross-sectional plan view of a preferred embodiment of a U-shaped deposition cartridge installed in a Siemens reactor. FIG. FIG. 2 is a front perspective cross-sectional view of a preferred embodiment of a U-shaped deposition cartridge installed in a Siemens reactor.

To achieve resistance heating of a material, it is necessary to pass an electric current through the material. However, current always flows through the path of minimum resistance. The equation for resistance is given as: That is,
R = ρ * L / S
Where R = resistance of a particular path in a particular material, ohm ρ = low bulk efficiency of that material, ohm * meter L = length of the path, meter S = cross-sectional area of the path through which the current flows.

  When an electrode is connected to the top two corners of a square plate of conductive material and energized, the majority of the current is a straight, narrow path across the top of the plate between one electrode and the other. Almost no current reaches the lower part of the plate. Similarly, when two separate pieces of material are connected in parallel, the majority of the current tends to flow through the lower resistance material. If two separate pieces are made of the same material, the majority of the current will flow through the piece with the smallest length to cross-sectional area ratio because the piece is less resistive. And If two separate pieces have the same length to cross-sectional area ratio but are made from different materials, the majority of the current will try to flow through the material with the lower bulk resistivity.

  Using the principles described above, it is possible to select materials of a particular bulk resistivity and dimension them to direct the current flow along the desired path. In the case of a deposition plate, the goal is to ensure that the entire surface can be heated evenly to the desired temperature, where the current is evenly distributed from one side to the other across the entire cross-sectional area of the plate. It will be necessary to flow. The challenge then is to distribute the current along one entire edge of the deposition plate and collect it along the entire opposite edge. This can be achieved by attaching distribution rods on both edges, in which case the resistance of the rods is lower than the resistance of the deposition plate. In this way, the current first flows down the entire length of one of the power distribution rods, then flows evenly through the entire cross section of the deposition plate and is evenly extracted by the opposite rod. If the power distribution rod and the deposition plate are made of the same material, the ratio of the rod length to the cross-sectional area needs to be smaller than the ratio of the plate length to the cross-sectional area. Even if the deposition plate is fairly thin, this ratio can be quite low if the deposition plate is sufficiently high. Therefore, the power distribution rod needs to have a sufficiently large cross-sectional area to ensure that current initially flows down its entire length. Suitable materials for this configuration when the distribution rod and deposition plate are made from the same material include, but are not limited to, tungsten, silicon nitride, silicon carbide, graphite, and alloys and composites thereof.

  As an alternative, the distribution rod can be made from a material that has a lower bulk resistivity than the material of the deposition plate, thereby reducing the cross-section of the rod. Suitable material combinations for this configuration include, but are not limited to, graphite for power distribution rods, silicon carbide for deposition plates, or tungsten for rods and silicon nitride for plates.

  As yet another alternative, a distribution rod by machining a serpentine pattern in the deposition plate so that current flows back and forth in a narrow path leading from one side of the plate to the other. Can be incorporated directly into the deposition plate. Such a configuration allows a large surface area to be resistively heated as long as the current is evenly distributed across the relatively narrow path.

  In any of the above configurations, it may be desirable to adhere a layer of electrical insulation that covers the entire deposition surface of the distribution rod and deposition plate. This insulation preferably has a much higher bulk resistivity than the material of the distribution rod and deposition plate, thereby ensuring that most of the current stays in the rod and plate and the surface of the insulation layer, such as polycrystalline silicon. Never flow into the deposited material. Polycrystalline silicon is a semiconductor whose resistivity decreases with increasing temperature, and is completely conductive at an average deposition temperature of 1150 ° C. Furthermore, as precipitation proceeds and the thickness of the polycrystalline silicon crust increases, the ratio of length to cross-sectional area of the polycrystalline silicon decreases and its resistance further decreases. Without the insulating layer, as the crust becomes thicker, more and more current begins to flow through the crust, effectively shorting the deposition plate. The deposition plate will not be properly heated and further deposition of polycrystalline silicon will be self-suppressed. Suitable material combinations to prevent this include, but are not limited to, graphite for the distribution rod and deposition plate and silicon carbide or silicon nitride for the insulating layer. This insulating layer is deposited over the distribution rod and deposition plate in a number of forms, including but not limited to chemical vapor deposition, preceramic polymer pastes, and ceramic matrix composites. Can do.

  FIG. 1 shows a preferred embodiment of a deposition cartridge 2 incorporating the above described power distribution and insulation mechanism. In this preferred embodiment, the deposition cartridge 2 consists of a single plate deposition plate 34 attached to two distribution rods 33 at both ends. The resistance of the distribution rod 33 is lower than the resistance of the single plate deposition plate 34, so that after the current first flows down the entire length of one distribution rod 33, the entire cross-sectional area of the single plate deposition plate 34. It flows evenly over and is taken out by the other power distribution rod 33. As a result, uniform resistance heating occurs over the entire deposition surface. With the exception of the ends of the distribution rod 33 that must remain uncovered to achieve good electrical contact with other electrical components, the entire assembly consists of the distribution rod 33 and the single plate deposition plate 34. To the deposition cartridge 2 is covered in an insulating layer 52 which shields the path of current to the material (not shown) deposited on the deposition cartridge 2.

  FIG. 2 shows a preferred embodiment of the deposition cartridge 2 in which the functions of the distribution bar 33 and the single plate deposition plate 34 are integrated into a single meandering deposition plate 51. The serpentine pattern slot machined in the serpentine deposition plate 51 provides a tortuous path that, while providing a large surface area as a whole, remains thin enough to allow current to flow evenly through its cross-sectional area. The first and last meandering strokes extend to form electrode tabs 53 for connection to other electrical components. The entire deposition cartridge 2 except for the electrode tabs 53 is covered in an insulating layer 52, which also creates a continuous deposition surface by covering and closing the serpentine slot. The thermal conductivity of the insulating layer 52 prevents a significant temperature gradient from being generated on the surface of the insulating layer between the region just above the meandering path and the region just above the meandering slot. This uniform heating allows uniform deposition of silicon across the entire surface of the deposition cartridge 2.

  1 and 2 both illustrate a preferred embodiment of a deposition cartridge 2 in which material is prevented from depositing along the upper edge of the deposition cartridge 2 by being in close proximity to an external cooling source such as a water cooled reactor wall. Show. Thereby, the substance to be deposited forms a crust covering the remaining three edges and both sides of the deposition cartridge 2 and is further heated in the opposite direction to the edge not covered by the crust. Collected.

  FIG. 3 shows a preferred embodiment of the deposition cartridge 2 incorporating a serpentine deposition plate having a wider outer path 54 and an insulating layer having a wider outer edge 55. When current flows through the deposition plate having a wider outer path 54, these outer paths are less heated than the inner serpentine path because they have a larger cross-sectional area and therefore lower resistance. The insulating layer dissipates this less heat due to even more conduction and convective losses by the wider outer edge 55, so that the edge of the deposition cartridge 2 is below the temperature required for significant deposition. By preventing further crust formation around all edges of the deposition cartridge 2, ie by restricting the crust formation to only two sides of the deposition cartridge 2, this further crusting is possible in many directions without further damage. Can be recovered.

  FIG. 4 shows a preferred embodiment of the deposition cartridge 2 incorporating a serpentine deposition plate having a separate outer path 56. These outer paths are left unenergized during the deposition phase, so that the edge of the deposition cartridge 2 remains cooler than both sides, so that no crust is formed. These outer paths are energized along with the inner path to perform any additional heating that may be required to simultaneously peel off the crust edges and center formed on both sides of the deposition cartridge 2 during the recovery stage. The By rapidly exfoliating all areas of the crust at the same time, the possibility of melting at the interface and hence the diffusion of impurities into the crust is minimized while at the same time minimizing energy consumption.

  The deposition cartridge 2 can be used in any deposition reactor, including dedicated cartridge reactors and Siemens reactors. FIG. 5 shows a preferred embodiment of an array of deposition cartridges 2 for use in a dedicated cartridge reactor. There are 16 deposition cartridges 2, which are connected to the two distribution bars 32 by electrode brackets 57 attached to their electrode tabs 53. The distribution bar 32 connects the deposition cartridge 2 to an AC or DC power source either in parallel or in series. As shown, the distribution bar 32 is located inside the cartridge reactor and connection with other electrical components is made through connection points on the reactor wall. However, it does not exclude other electrical components via electrode tabs 53 that connect to externally distributed distribution bars or their own individual connection points that penetrate the walls of the reactor.

  In a preferred embodiment, each deposition cartridge 2 is 42 cm high and 75 cm long, and the spacing between the deposition cartridges 2 is 5 cm. This spacing allows a reasonable 2 cm thick crust to grow on each side of the deposition cartridge 2, while at the same time providing a further 1 cm gap sufficient for the deposition gas to flow between the crusts until the end of the deposition cycle. Realize. The crust thickness and void width can be adjusted to optimize the deposition cycle time and deposition gas flow characteristics as desired. As shown, the total volume occupied by the array of all 16 deposition cartridges 2 is approximately 75 cm × 75 cm × 42 cm, which is used for the production of polycrystalline ingots, considering the crust thickness. It is designed to fit inside the 85 cm x 85 cm crucible.

  However, the size, size and spacing of the deposition cartridge 2 can be easily changed so that it can be adapted to most dimensions inside the crucible. This dimensional flexibility is useful as crystallization techniques continue to improve and increasingly larger crucibles are used. In another preferred embodiment, the deposition cartridge 2 is made circular by making the deposition cartridge 2 towards the side of the array progressively shorter than the central deposition cartridge 2 so that the flat cross section of the deposition cartridge 2 is itself circular. It can also be dimensioned to fit inside a crucible having a flat cross section. This preferred embodiment uses a precipitation cartridge 2 to produce a single crystal ingot along with a Czochralski crystallization process that involves inserting a rotating draw rod into the melt in a circular crucible and pulling out a cylindrical single crystal. Make it possible to do.

  The deposition cartridge 2 is oriented vertically with the electrode tab 53 facing up. This orientation brings the upper edges of the deposition cartridge 2 closer to the water-cooled walls of the reactor upper assembly, thus preventing material from depositing on these upper edges. The deposition of material is limited to the two faces of each deposition cartridge 2 that are some distance away from the upper edge and the remaining three edges, so that all faces where precipitation occurs are in the same direction, i.e. perpendicular. It becomes the direction. This facilitates the subsequent steps of separating the crust from the precipitation cartridge 2 by heating the precipitation cartridge 2 to or above the melting temperature of the material and applying a unidirectional force such as gravity. However, in this case, it is not excluded to orient the deposition cartridge 2 in any direction and use any force in addition to gravity to separate the crust from the deposition cartridge 2.

  FIG. 6 shows a preferred embodiment of a deposition cartridge 2 for use in a Siemens reactor. The deposition cartridge 2 is fabricated to have the same dimensions as the polycrystalline rod pair at the end of the stroke, which is about 200-240 cm high and about 40-50 cm long. The electrode tab 53 faces downward and is shaped to fit over the Siemens reactor electrode 44 and is attached to the electrode 44 using an electrode bracket 57. As a result, these deposition cartridges 2 have little or no mechanical or electrical changes to increase production capacity at the same unit energy consumption or reduce unit energy consumption at the same production capacity. It can be adapted to the reactor. To illustrate this point, FIG. 7 shows an 18-pair Siemens reactor with a schematic of Siemens reactor electrode 44, polycrystalline silicon rod 59 at the beginning of the stroke, and polycrystalline silicon rod 43 at the end of the stroke. FIG. 8 shows a preferred embodiment of the same 18-pair Siemens reactor with the deposition cartridge 2 attached. The deposition cartridge 2 occupies the same space as the polycrystalline silicon rod, is fitted into the same electrode, and achieves a much larger average deposition area.

  FIGS. 9-11 show one preferred embodiment of how the deposition cartridge 2 can be attached to a Siemens reactor. The electrode tabs 53 are each screwed to two L-shaped electrode brackets 57, which are screwed to the graphite holder of the Siemens reactor electrode 44. Electrode tab 53 and electrode bracket 57 integral with deposition plate 54 are preferably fabricated from a conductive and structurally suitable material, including but not limited to carbon-carbon composites. The formation of the polycrystalline silicon crust along the lower edge of the deposition cartridge 2 is shown in (i) the design of the deposition cartridge 2, its preferred embodiment being shown in FIGS. 3-4, (ii) this lower edge. Close to the water cooled Siemens reactor bottom plate 47, (iii) suitable insulation, specific contamination, and including, but not limited to, silicon carbide, silicon nitride, and various ceramics Shielded (not shown) made from a refractory material and prevents deposition gas from contacting the lower edge, and prevented by any combination of (iv) (i), (ii), and (iii) The

  FIGS. 12-14 illustrate a preferred embodiment of a deposition cartridge 2 that is particularly suitable for use in a Siemens reactor. The deposition cartridge 2 has a U-shaped deposition plate 60 that does not have an insulating layer, but instead has an insulating spacer 58 mounted between its two sides. Current flows from one Siemens reactor electrode 44 to the other, along a U-shaped deposition plate 60, which is essentially a two-pass serpentine deposition plate, thereby heating the U-shaped deposition plate 60. , Deposit a substance on it. However, since the insulating spacer 58 is not heated, no material is deposited thereon. Therefore, the two sides of the U-shaped deposition plate 60 and the crust formed thereon are not short-circuited. The insulating spacer 58 also shields the entire inner edge of the U-shaped deposition plate 60 from crust formation, allowing the crust to be separated from the U-shaped deposition plate 60 in the direction of the rounded end without obstruction.

Claims (14)

In an electrically heated deposition cartridge used to produce a material by chemical vapor deposition,
(I) a higher surface area to volume ratio than the seed rod pair;
(Ii) the ratio of the initial effective precipitation surface area to the final effective precipitation surface area, which is higher than the seed crystal rod;
(Iii) a deposition cartridge having a higher ratio of effective deposition surface area to total surface area than a basic deposition plate,
The ratios are achieved by reaching and maintaining a desired temperature on all desired surfaces of the deposition cartridge, which is a desired amount over all desired cross-sectional areas of the deposition cartridge. Achieved by distributing the current,
A deposition cartridge characterized by that.   Distributing the desired amount of current over the desired cross-sectional area of the deposition cartridge connects a distribution rod of appropriate material and size to a single plate distribution plate of appropriate material and size; 2. The deposition cartridge according to claim 1, wherein the distribution rod is achieved by the distribution rods evenly distributing the current over the entire cross-sectional area of the single plate type distribution plate.   Distributing the desired amount of current across the desired cross-sectional area of the deposition cartridge means that even when a conductive material is deposited on the deposition cartridge, current flows from the deposition cartridge onto the deposition cartridge. 3. The deposition cartridge according to claim 2, wherein the deposition rod is maintained by covering the power distribution rod and the single-plate deposition plate with an insulating layer so as not to flow to the deposited material.   The deposition cartridge wherein the insulating layer extends a distance beyond the outer edge of the power distribution rod and the single plate deposition plate, thereby being cooler during deposition than the rest of the deposition cartridge 4. A deposition cartridge according to claim 3, wherein said outer edges are formed so that no crust of deposited material is grown on said outer edges.   Distributing the desired amount of current across the desired cross-sectional area of the deposition cartridge incorporates the function of a distribution rod and single plate deposition plate into a serpentine deposition plate of the appropriate material and dimensions, and The result is achieved by allowing the current to flow evenly through the paths created by machining the alternating slots in the plate, while the total surface area formed by those paths is increased. The deposition cartridge according to claim 1.   The outermost serpentine path is wider than the inner serpentine path, thereby forming an outer edge of the deposition cartridge that is cooler than the other parts of the deposition cartridge during deposition, so that 6. A deposition cartridge according to claim 5, wherein no crust of deposited material is grown on the outer edges.   During deposition, electricity is applied during deposition so as to form outer edges of the deposition cartridge that are cooler than the rest of the deposition cartridge, thereby preventing a crust of deposited material from growing on those outer edges. On the other hand, electricity can be turned on in separating the crust from the deposition plate in order to heat it to effectively peel the crust edges deposited on both sides of the deposition cartridge. 6. The deposition cartridge according to claim 5, wherein an energized outer meander path is present.   Distributing the desired amount of current across the desired cross-sectional area of the deposition cartridge means that even when a conductive material is deposited on the deposition cartridge, current flows from the deposition cartridge onto the deposition cartridge. The deposition cartridge is maintained by covering it with an insulating layer so that it does not flow to the deposited material, which may otherwise impede subsequent separation of the crust, but the material into the serpentine slot Precipitation cartridge according to any one of claims 5 to 7, wherein precipitation is prevented.   The insulating layer extends a distance beyond the outer edge of the serpentine deposition plate, thereby forming an outer edge of the deposition cartridge that is cooler than the rest of the deposition cartridge during deposition. 9. A deposition cartridge according to claim 8, wherein as a result, no crust of deposited material is grown on the outer edges.   Distributing the desired amount of current across the desired cross-sectional area of the deposition cartridge comprises a U-shaped deposition plate having an insulating spacer that fills an inner region of the U-shape, thereby Current is achieved by flowing through the U-shaped deposition plate to heat the U-shaped plate to form a crust of material on the U-shaped plate, while at the same time the insulating spacer is removed from the deposition cartridge. The deposition cartridge of claim 1, wherein crust separation is inhibited otherwise, but prevents crust formation on an inner edge of the U-shaped deposition plate.   Formation of the crust on one or more edges of the deposition cartridge includes suitable insulating, non-staining, and heat resistant, including but not limited to silicon carbide, silicon nitride, and various ceramics. 11. A deposition cartridge according to claim 1, wherein the deposition cartridge is made of a material and is prevented by a shield that prevents deposition gas from contacting the edges.   The distribution bar, single plate deposition plate, and serpentine deposition plate may be any suitable electrical device, including but not limited to tungsten, silicon nitride, silicon carbide, graphite, and alloys, composites, and mixtures thereof. 11. A deposition cartridge according to any one of claims 2, 5, 6, 9, and 10, characterized in that it is made from a material having thermal, structural and structural properties.   The insulating layer or spacer is a material having suitable electrical, thermal, and structural properties, including but not limited to, silicon carbide and silicon nitride, including but not limited to a chemical vapor phase. 10. Made of materials that can be deposited in a number of forms, including growth methods, preceramic polymer pastes, and ceramic matrix composites. And the deposition cartridge according to any one of 10 and 10. In a method and precipitation cartridge for improving the production rate of a precipitation reactor that normally uses a pair of seed rods or basic precipitation plates and / or reducing the energy consumption per production unit,
a. Replacing the seed rod pair or the basic precipitation plate in the precipitation reactor with a precipitation cartridge, wherein the total average effective precipitation surface area of the precipitation cartridge is such as the internal volume and maximum precipitation gas flow rate of the reactor; Within the physical constraints, to the extent necessary to produce the desired increase in production rate and / or the desired reduction in energy consumption per unit of production, the seed rod pair or basic precipitation plate A stage that is greater than the total average effective precipitation surface area;
b. The standard deposition of the deposition reactor, except that the average deposition gas flow rate can be increased and the cycle duration can be shortened compared to when seed rods or basic single plate deposition plates are used. The stage of running the cycle;
c. Removing the deposition cartridge with a crust of deposited material from the deposition reactor and transporting it to another collection site;
d. Heating the deposition cartridge to or above the melting temperature of the deposition material, whereby a thin layer of the material liquefies at the interface with the deposition cartridge, and the crust is removed from the deposition cartridge. Peeling off, and
e. Separating the peeled crust from the deposition cartridge by applying an appropriate force, such as gravity or mechanical force;
f. Returning the deposition cartridge to the Siemens reactor and repeating the steps b to e. And a deposition cartridge.

Images