JP2014504038A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 230000004888 barrier function Effects 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 230000031700 light absorption Effects 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 142
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 36
- 239000011787 zinc oxide Substances 0.000 description 17
- 239000011734 sodium Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 9
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 8
- 229910052708 sodium Inorganic materials 0.000 description 8
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- -1 CdSe Chemical compound 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
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- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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Abstract
【選択図】図1
Description
Claims (11)
- 基板と、
前記基板の上に形成された裏面電極層、光吸収層、透明電極層と、
前記基板と裏面電極層との間に形成されて2族元素を含むバリア層と、
を含むことを特徴とする、太陽電池。 - 前記バリア層は50nm乃至1μmであることを特徴とする、請求項1に記載の太陽電池。
- 前記バリア層はZnOを含むことを特徴とする、請求項1に記載の太陽電池。
- 前記バリア層はNa2OまたはK2Oのうち、いずれか1つをさらに含むことを特徴とする、請求項3に記載の太陽電池。
- 前記バリア層はZnOを含む第1バリア層と、Na2OまたはK2Oのうちのいずれか1つを含む第2バリア層を含むことを特徴とする、請求項4に記載の太陽電池。
- 前記第1バリア層及び第2バリア層は互いに交差して積層形成されたことを特徴とする、請求項5に記載の太陽電池。
- 前記基板は金属成分が含まれた金属基板であることを特徴とする、請求項1に記載の太陽電池。
- 金属基板を用意するステップと、
前記金属基板の上に2族元素を含むバリア層を形成するステップと、
前記バリア層の上に裏面電極層、光吸収層、透明電極層を順次に形成するステップと、
を含むことを特徴とする、太陽電池製造方法。 - 前記バリア層はZnO、Na2O、またはK2Oのうち、いずれか1つを蒸着して形成されることを特徴とする、請求項8に記載の太陽電池製造方法。
- 前記バリア層はZnO、Na2O、またはK2Oのうち、いずれか1つを同時に蒸着させて形成されることを特徴とする、請求項9に記載の太陽電池製造方法。
- 前記バリア層はZnO、Na2O、またはK2Oのうち、いずれか1つを交互に蒸着させて形成されることを特徴とする、請求項9に記載の太陽電池製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0006994 | 2011-01-24 | ||
KR1020110006994A KR20120085577A (ko) | 2011-01-24 | 2011-01-24 | 태양전지 및 그의 제조방법 |
PCT/KR2012/000550 WO2012102533A2 (ko) | 2011-01-24 | 2012-01-20 | 태양전지 및 그의 제조방법 |
Publications (1)
Publication Number | Publication Date |
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JP2014504038A true JP2014504038A (ja) | 2014-02-13 |
Family
ID=46581272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013551896A Pending JP2014504038A (ja) | 2011-01-24 | 2012-01-20 | 太陽電池及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2669957A4 (ja) |
JP (1) | JP2014504038A (ja) |
KR (1) | KR20120085577A (ja) |
CN (1) | CN103430322B (ja) |
WO (1) | WO2012102533A2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101436539B1 (ko) * | 2012-11-06 | 2014-09-02 | 엘에스엠트론 주식회사 | 박막형 태양전지 및 그 제조방법 |
KR101709999B1 (ko) * | 2015-10-30 | 2017-02-24 | 한국생산기술연구원 | ZnO 확산 방지층을 갖는 태양 전지 및 그 제조 방법 |
WO2019245433A1 (en) * | 2018-06-19 | 2019-12-26 | Solibro Research Ab | Cigs solar cell with barrier layer and method of producing such |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010239129A (ja) * | 2009-03-10 | 2010-10-21 | Fujifilm Corp | 光電変換素子及び太陽電池、光電変換素子の製造方法 |
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US7732229B2 (en) * | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
JP2006140414A (ja) * | 2004-11-15 | 2006-06-01 | Matsushita Electric Ind Co Ltd | 太陽電池用基板及びこれを用いた太陽電池 |
CN101093863A (zh) * | 2007-06-12 | 2007-12-26 | 南开大学 | ZnO为电绝缘与杂质阻挡层的薄膜太阳电池及其制备方法 |
KR101047941B1 (ko) * | 2007-10-31 | 2011-07-11 | 주식회사 엘지화학 | Ci(g)s 태양전지 후면 전극의 제조방법 |
FR2924863B1 (fr) * | 2007-12-07 | 2017-06-16 | Saint Gobain | Perfectionnements apportes a des elements capables de collecter de la lumiere. |
DE102009013904A1 (de) * | 2009-03-19 | 2010-09-23 | Clariant International Limited | Solarzellen mit einer Verkapselungsschicht auf Basis von Polysilazan |
-
2011
- 2011-01-24 KR KR1020110006994A patent/KR20120085577A/ko not_active Application Discontinuation
-
2012
- 2012-01-20 CN CN201280012896.4A patent/CN103430322B/zh not_active Expired - Fee Related
- 2012-01-20 JP JP2013551896A patent/JP2014504038A/ja active Pending
- 2012-01-20 EP EP12739255.3A patent/EP2669957A4/en not_active Withdrawn
- 2012-01-20 WO PCT/KR2012/000550 patent/WO2012102533A2/ko active Application Filing
Patent Citations (1)
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JP2010239129A (ja) * | 2009-03-10 | 2010-10-21 | Fujifilm Corp | 光電変換素子及び太陽電池、光電変換素子の製造方法 |
Non-Patent Citations (1)
Title |
---|
JPN6015042101; C.Y.Shi: '"Cu(In,Ga)Se2 solar cells on stainless-steel substrates covered with ZnO diffusion barriers"' Solar Energy Materials and Solar Cells Vol.93, No.5 (2009), pp.654-656 * |
Also Published As
Publication number | Publication date |
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CN103430322B (zh) | 2016-08-03 |
EP2669957A2 (en) | 2013-12-04 |
KR20120085577A (ko) | 2012-08-01 |
CN103430322A (zh) | 2013-12-04 |
WO2012102533A2 (ko) | 2012-08-02 |
EP2669957A4 (en) | 2018-01-24 |
WO2012102533A3 (ko) | 2012-11-29 |
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