JP2014228670A - Focus position adjustment method and test method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a focus position adjustment method that enables even a simple configuration to adjust a focus position by detecting the focus position with high detection accuracy and in a broad detection range.SOLUTION: A method comprises the steps of: emitting light for illuminating a specimen 11 from a light source 1; making the light incident to an aperture stop 3 provided at a position conjugate with a pupil of an illumination optical system, and further making the light incident to a mask 6 and a mask 7 in this order; forming a pattern image of the mask 6 on a front side further than a pattern surface of the specimen 11, and forming a pattern image of the mask 7 on a rear side further than the pattern surface of the specimen 11; and adjusting a focus position on the basis of a difference value between a contrast of the pattern image of the mask 6 formed upon a sensor 13 when an aperture part of the aperture stop 3 is set as a first diameter and a contrast of the pattern image of the mask 7 formed thereupon, and a difference value between a contrast of the pattern image of the mask 6 formed upon the sensor 13 when the aperture part of the aperture stop 3 is set as a second diameter and a contrast of the pattern image of the mask 7 formed thereupon.

Description

  The present invention relates to a focus position adjustment method and an inspection method.

  With the increase in integration and capacity of large scale integrated circuits (LSIs), circuit dimensions required for semiconductor elements are becoming ever smaller.

  A semiconductor element uses an original pattern (a mask or a reticle; hereinafter referred to as a mask) on which a circuit pattern is formed, and the pattern is exposed and transferred onto a wafer by a reduction projection exposure apparatus called a stepper or a scanner. It is manufactured by forming a circuit.

  Yield improvement is indispensable for the manufacture of LSIs that require a large amount of manufacturing costs. On the other hand, a state-of-the-art device is required to form a pattern with a line width of several tens of nanometers. Here, a mask pattern defect is a major factor that reduces the yield. With the miniaturization of the LSI pattern dimension formed on the semiconductor wafer, the defect of the mask pattern is also miniaturized. In addition, there have been attempts to absorb variations in process conditions by increasing the dimensional accuracy of the mask, and in mask inspection, it is necessary to detect defects with extremely small patterns. For this reason, high inspection accuracy is required for an apparatus for inspecting a mask pattern.

  In the inspection apparatus, the light emitted from the light source is irradiated onto the mask via the optical system. The mask is placed on the stage, and the irradiated light scans the mask as the stage moves. The light reflected by the mask forms an image on the sensor through the lens. Then, a defect inspection of the mask is performed based on the optical image picked up by the sensor.

  In the inspection process, it is important to accurately detect and focus the focus position of the light irradiated on the mask. As a focus position detection method, there is a method using a pattern projection method disclosed in Patent Literature 1, Patent Literature 2, and the like. In this method, first, a focus position detection pattern is projected onto a mask by the illumination optical system. At this time, the pattern is projected so as to form an image on the focal plane of the image detection optical system. Further, the two sensors are arranged so that the in-focus plane comes to a position shifted back and forth along the optical axis with the image plane of the focal position detection pattern interposed therebetween. That is, these sensors have a focal position when the mask surface is displaced forward (front pin) or when the mask surface is displaced backward (rear pin) with respect to the focal plane of the image detection optical system. The detection pattern is arranged at a position where the contrast value is maximized. The shift amount and the shift direction from the in-focus position of the mask are detected based on the magnitude relationship between the contrast values of the patterns detected by the two sensors. The height of the mask is adjusted so as to be positioned on the focusing surface of the image detection optical system based on the detected result. Thereafter, the optical image of the mask detected by the image detection optical system is compared with an image serving as a reference for defect determination, and the quality of the pattern formed on the mask is determined.

  According to the configurations of Patent Document 1 and Patent Document 2, the above two sensors are provided in addition to the illumination optical system that illuminates the inspection light on the mask and the image detection optical system that captures an optical image of the mask. Therefore, a focus detection optical system for detecting the focus position is required. For this reason, there exists a problem that an inspection apparatus will be enlarged and cost will also become high.

Sho 62-31815 JP-A-5-215511

  To solve the above problem, the focus detection patterns are arranged at the positions corresponding to the front and rear pins of the illumination optical system, projected onto the mask surface, and then imaged and projected onto the image detection optical system. A method of detecting the focal position by reading the contrast value of the pattern is conceivable. According to this method, it is not necessary to provide a focus detection optical system. However, it is difficult to achieve both sensitivity and range for detecting the focal position. In order to improve the detection sensitivity, it is better to use a thin pattern as the projection pattern and increase the amount of change in contrast value even when the deviation from the in-focus point is small. This is because it is preferable to make the pattern a projection pattern so that a change in contrast value can be grasped even when the pattern is greatly deviated from the in-focus position.

  In recent years, it has become necessary to detect the focal position with high accuracy and in a wide range in order to meet the demand for high-speed inspection. Therefore, in the above configuration, prepare a pattern that prioritizes detection sensitivity and a pattern that prioritizes detection range.If you want to prioritize detection sensitivity, use the former pattern, and if you want to prioritize detection range. It can be considered to switch to the latter pattern. According to this method, both detection sensitivity and detection range can be achieved. However, as described above, there are problems that two types of patterns are required and a switching mechanism for switching these patterns is also required.

  The present invention has been made in view of these points. That is, an object of the present invention is to provide a focus position adjustment method that can detect and adjust a focus position with a high detection sensitivity and a wide detection range with a simple configuration.

  Another object of the present invention is to provide an inspection method capable of detecting a focal position with a high detection sensitivity and a wide detection range, and thereby performing an inspection with high accuracy, while having a simple configuration. It is in.

  Other objects and advantages of the present invention will become apparent from the following description.

According to a first aspect of the present invention, an illumination optical system that illuminates a sample with light from a light source via an objective lens and light reflected by the sample or transmitted through the sample are coupled to a sensor via the objective lens. A focus position adjustment method in an inspection apparatus that performs defect inspection of a pattern formed on the sample using an image formed on the sensor.
Light that illuminates the sample is emitted from the light source, is incident on an aperture stop provided at a position conjugate with the pupil of the illumination optical system, and is then incident on a first light shielding portion provided with a light shielding pattern. After that, the first light shielding pattern has the same pattern as the light shielding pattern and is provided at a position that does not overlap with the light shielding pattern on a plane perpendicular to the optical axis. The first light-shielding part is made incident on a second light-shielding part that is arranged so as to be shifted from the part, and an image of the first light-shielding part is formed in front of the pattern surface of the sample, and the image of the second light-shielding part is A step of forming an image behind the pattern surface of the sample;
The image of the first light-shielding portion projected on the sample is provided on the same plane as the first light-receiving surface that forms an image of the pattern of the sample of the sensor via the objective lens. Forming an image on the two light-receiving surfaces;
The second light-shielding portion image projected onto the sample is provided on the same plane as the first light-receiving surface that forms an image of the sample pattern of the sensor via the objective lens. 3 forming an image on the light receiving surface;
Detecting a focal position based on the contrast of the image formed on the second light receiving surface and the contrast of the image formed on the third light receiving surface;
A difference value between the contrast of the image formed on the second light receiving surface and the contrast of the image formed on the third light receiving surface when the opening of the aperture stop has the first diameter; The contrast of the image formed on the second light receiving surface and the image formed on the third light receiving surface when the aperture of the aperture stop has a second diameter larger than the first diameter. And a step of adjusting the focal position based on a difference value with contrast.

In the first aspect of the present invention, the step of adjusting the focal position may include a contrast of an image formed on the second light receiving surface when the aperture of the aperture stop is the first diameter. Using the difference value with the contrast of the image formed on the third light receiving surface to bring the focal position close to the in-focus position;
The difference value between the contrast of the image formed on the second light receiving surface and the contrast of the image formed on the third light receiving surface when the opening of the aperture stop is the second diameter; And finely adjusting the focal position close to the focus position.

  In the first aspect of the present invention, it is preferable that the aperture stop is provided at a position conjugate with the pupil of the objective lens.

In the first aspect of the present invention, the aperture stop is configured to be able to vary the diameter of the opening,
In the step of adjusting the focal position, it is preferable to change the diameter of the opening to the first diameter and the second diameter.

  In the first aspect of the present invention, in the step of adjusting the focal position, there are two types of aperture stops: an aperture stop having an opening with the first diameter and an aperture stop having an opening with the second diameter. It is preferable to use an aperture stop.

According to a second aspect of the present invention, an illumination optical system that illuminates a sample with light from a light source via an objective lens and light reflected by the sample or transmitted through the sample are coupled to a sensor via the objective lens. An image forming optical system for imaging, and using the image formed on the sensor, an inspection method for inspecting a defect of a pattern formed on the sample,
Light that illuminates the sample is emitted from the light source, is incident on an aperture stop provided at a position conjugate with the pupil of the illumination optical system, and is then incident on a first light shielding portion provided with a light shielding pattern. After that, the first light shielding pattern has the same pattern as the light shielding pattern and is provided at a position that does not overlap with the light shielding pattern on a plane perpendicular to the optical axis. The first light-shielding part is made incident on a second light-shielding part that is arranged so as to be shifted from the part, and an image of the first light-shielding part is formed in front of the pattern surface of the sample, and the image of the second light-shielding part is A step of forming an image behind the pattern surface of the sample;
The image of the first light-shielding portion projected on the sample is provided on the same plane as the first light-receiving surface that forms an image of the pattern of the sample of the sensor via the objective lens. Forming an image on the two light-receiving surfaces;
The second light-shielding portion image projected onto the sample is provided on the same plane as the first light-receiving surface that forms an image of the sample pattern of the sensor via the objective lens. 3 forming an image on the light receiving surface;
Detecting a focal position based on the contrast of the image formed on the second light receiving surface and the contrast of the image formed on the third light receiving surface;
A difference value between the contrast of the image formed on the second light receiving surface and the contrast of the image formed on the third light receiving surface when the opening of the aperture stop has the first diameter; The contrast of the image formed on the second light receiving surface and the image formed on the third light receiving surface when the aperture of the aperture stop has a second diameter larger than the first diameter. A step of adjusting the focal position based on a difference value with contrast;
Forming the image of the pattern of the sample on the first light receiving surface by the illumination optical system from which the aperture stop is removed and the imaging optical system after the adjustment of the focal position; ,
And a step of performing a defect inspection of a pattern formed on the sample using an image formed on the first light receiving surface.

In the second aspect of the present invention, the step of adjusting the focal position may include a contrast of an image formed on the second light receiving surface when the aperture of the aperture stop is the first diameter. Using the difference value with the contrast of the image formed on the third light receiving surface to bring the focal position close to the in-focus position;
The difference value between the contrast of the image formed on the second light receiving surface and the contrast of the image formed on the third light receiving surface when the opening of the aperture stop is the second diameter; And finely adjusting the focal position close to the focus position.

  In the second aspect of the present invention, it is preferable that the aperture stop is provided at a position conjugate with the pupil of the objective lens.

In the second aspect of the present invention, the aperture stop is configured to be capable of changing the diameter of the opening,
In the step of adjusting the focal position, it is preferable to change the diameter of the opening to the first diameter and the second diameter.

  In the second aspect of the present invention, in the step of adjusting the focal position, there are two types of aperture stops: an aperture stop having an opening with the first diameter and an aperture stop having an opening with the second diameter. It is preferable to use an aperture stop.

  According to the focus position adjustment method of the present invention, it is possible to detect and adjust the focus position with high detection sensitivity and a wide detection range with a simple configuration.

  According to the inspection method of the present invention, since it is possible to detect a focal position in a high detection sensitivity and a wide detection range with a simple configuration, it is possible to perform inspection with high accuracy.

In Embodiment 1, it is an example of the schematic diagram of the optical system used for adjustment of a focus position. In Embodiment 1, it is a figure which shows the relationship of an imaging position. In Embodiment 1, it is a figure which shows the detection signal of the sensor about the pattern of the mask. In Embodiment 1, it is a figure which shows the detection signal of the sensor about the pattern of the mask. In Embodiment 1, it is a figure which shows the difference of the contrast of the pattern image of the mask 6 detected by a sensor, and the contrast of the pattern image of the mask 7. FIG. In Embodiment 1, it is an example of the output waveform of the pattern of the mask 6 in a sensor. In Embodiment 1, it is another example of the output waveform of the pattern of the mask 6 in a sensor. It is a schematic block diagram of the inspection apparatus in Embodiment 2. In Embodiment 2, it is a figure explaining the acquisition procedure of the optical image of the pattern formed in the sample.

Embodiment 1 FIG.
The focus position adjusting method according to the present embodiment will be described with reference to FIGS.

  FIG. 1 is an example of a schematic diagram of an optical system used for adjusting the focal position. This optical system includes an illumination optical system a that illuminates a sample 11 on which a pattern to be inspected is formed, and an imaging optical system b that forms an image of the illuminated pattern of the sample 11 on a light receiving surface of a sensor 13. Have

  The illumination optical system a includes a light source 1, lenses 2, 4, 5, 8, an aperture stop 3, a mask 6 (first light-shielding portion) and a mask 7 (first light-shielding portion) on which a projection pattern for focus position detection is formed. 2 light shielding portions), a half mirror 9, and an objective lens 10. On the other hand, the imaging optical system b includes a half mirror 9, an objective lens 10, a lens 12, and a sensor 13. The half mirror 9 and the objective lens 10 are common optical elements for the illumination optical system a and the imaging optical system b. That is, the optical path of the illumination light and the optical path of the reflected light reflected by the sample 11 are common to the sample 11 to the half mirror 9.

  The sample 11 is placed on a stage 14 that can move in the X, Y, and Z directions. Examples of the sample 11 include a mask used when a fine circuit pattern is transferred to a wafer, a glass substrate, or the like. However, the sample 11 is not limited thereto, and the wafer or glass onto which the pattern on the mask is transferred. It can also be a substrate or the like.

  The light source 1 can be a laser light source, for example, a light source that emits DUV (Deep Ultraviolet radiation) light having a wavelength of about 190 nm to 200 nm. The light emitted from the light source 1 propagates along the optical axis 15. This light is incident on the lens 2. The lens 2 refracts incident light and guides it to the aperture stop 3. The aperture stop 3 adjusts the thickness of the light beam, that is, the numerical aperture (NA). The aperture stop 3 is provided at a position conjugate with the pupil of the illumination optical system a, for example, the pupil of the objective lens 10. The light transmitted through the aperture stop 3 enters the lens 4 and is condensed, and then becomes parallel light by the lens 5 to illuminate the mask 6 uniformly. Subsequently, the light transmitted through the mask 6 is incident on the mask 7 that is disposed away from the mask 6 along the optical axis 15.

  For example, the mask 6 may have a configuration in which a line and space pattern using a chromium film is formed on a transparent glass substrate. At this time, the line and space pattern may be one type. That is, it is not necessary to provide a thin line and space pattern for increasing detection sensitivity and a thick line and space pattern for expanding the detection range, and one type of line and space pattern, for example, 1 μmL. Only the / S pattern is sufficient. Similarly, when another projection pattern is provided instead of the line and space pattern, only one type may be used.

  In the mask 6, the line pattern portion is a light shielding pattern. Therefore, a part of the light incident on the mask 6 is shielded by the light shielding pattern, and the light transmitted through the region without the light shielding pattern illuminates the mask 7 uniformly.

  The mask 7 has the same configuration as the mask 6. That is, in the above example, a line and space pattern similar to that of the mask 6 is formed on a transparent glass substrate, and the line pattern portion becomes a light shielding pattern.

  Here, if a plane perpendicular to the optical axis 15 is an XY plane, the pattern of the mask 7 is arranged at a position different from the pattern of the mask 6 on the XY plane. For example, the center of the mask 6 and the mask 7 is the origin (0, 0) on the XY plane. It is assumed that the origin (0, 0) of the mask 6 and the origin (0, 0) of the mask 7 are arranged so as to coincide with the optical axis 15. In this case, as viewed from the light source 1 side, for example, the pattern of the mask 6 is arranged in the first quadrant (X> 0, Y> 0) and the fourth quadrant (X> 0, Y <0), and the mask 7 Are arranged in the second quadrant (X <0, Y> 0) and the third quadrant (X <0, Y <0). That is, the light shielding pattern of the mask 6 does not overlap the light shielding pattern of the mask 7 on the XY plane. The arrangement relationship between the pattern of the mask 7 and the pattern of the mask 6 is not limited to this, and both patterns, in particular, the light shielding pattern of the mask 7 and the light shielding pattern of the mask 6 do not overlap on the XY plane. Other embodiments may be used.

  The light transmitted through the mask 7 enters the lens 8. The lens 8 refracts and collects incident light. The lens 8 is an imaging lens and forms an image of the light source 1. That is, the lens 8 forms an image of the light source 1 at the position of the pupil of the objective lens 10.

  The light refracted by the lens 8 enters the half mirror 9. The half mirror 9 is disposed, for example, inclined by 45 degrees with respect to the optical axis 15. The half mirror 9 reflects about half of the incident light and transmits the remaining half. Therefore, a part of the light incident on the half mirror 9 from the lens 8 is reflected in the direction of the sample 11. That is, the optical axis 15 is bent 90 degrees by the half mirror 9.

  The illumination light reflected by the half mirror 9 enters the objective lens 10. The objective lens 10 can have a structure in which a plurality of lenses are arranged in a lens barrel. The pupil of the objective lens 10 forms an image of the light source 1. The objective lens 10 refracts incident light and then illuminates the sample 11. As described above, the illumination light is transmitted through the masks 6 and 7. Therefore, the patterns of the masks 6 and 7 are projected onto the sample 11. At this time, the pattern of the mask 6 and the pattern of the mask 7 are projected on different positions on the sample 11. That is, the pattern of the mask 6 and the pattern of the mask 7 do not overlap on the sample 11.

  The light reflected by the sample 11 propagates to the half mirror 9 through an optical path common to the illumination light. That is, the reflected light is refracted by the objective lens 10 and enters the half mirror 9. The light refracted by the objective lens 10 becomes a substantially parallel light beam. A part of the light passes through the half mirror 9 and enters the lens 12.

  The lens 12 is an imaging lens and forms an image of the sample 11 on the light receiving surface of the sensor 13. In the case of the in-focus position, the pattern surface of the sample 11 has a conjugate image formation relationship with the light receiving surface of the sensor 13.

  An example of the sensor 13 is a line sensor in which CCD cameras that are image sensors are arranged in a line. For example, a time delay integration (TDI) sensor can be used as the line sensor. In this case, the light receiving pixels of the sensor 13 are arranged, for example, along the X direction or the Y direction. The line-shaped light receiving pixels are arranged so as to cross the image of the projection pattern. In the light receiving pixel row, light and dark according to the projection patterns of the masks 6 and 7 are repeated. For example, at the boundary between the line pattern and the pattern corresponding to the space between the lines, the line pattern side corresponds to the light receiving pixel in the dark portion, and the pattern side corresponding to the space corresponds to the light receiving pixel in the bright portion. Therefore, the image detected by the sensor 13 has a contrast corresponding to the line and space pattern. The light receiving amount is low in the light receiving pixels in the dark portion, and the light receiving amount is high in the light receiving pixels in the bright portion.

  As shown in FIG. 1, the mask 6 and the mask 7 are arranged so as to be shifted in the direction of the optical axis 15. For this reason, the imaging position of the pattern of the mask 6 is different from the imaging position of the pattern of the mask 7. That is, the imaging position of the pattern of the mask 6 by the objective lens 10 is on the front side of the pattern surface of the sample 11. Here, the “front side” refers to the light source 1 side of the optical path propagating from the light source 1 toward the sensor 13. On the other hand, the imaging position of the mask 7 by the objective lens 10 is behind the pattern surface of the sample 11. The “rear side” is the sensor 13 side of the optical path propagating from the light source 1 toward the sensor 13. That is, the imaging point of the pattern of the mask 6 is on the light source 1 side with respect to the pattern surface of the sample 11, and the imaging point of the pattern of the mask 7 is on the sensor 13 side with respect to the pattern surface of the sample 11.

  When the pattern surface of the sample 11 is shifted from the in-focus position to the front side (the light source 1 side) and the pattern of the mask 6 is imaged on the pattern surface of the sample 11, the contrast of the pattern of the mask 6 detected by the sensor 13 is maximum. Become. On the other hand, when the pattern surface of the sample 11 is shifted from the in-focus position to the rear side (sensor 13 side) and the pattern of the mask 7 is imaged on the pattern surface of the sample 11, the contrast of the mask 7 detected by the sensor 13 is maximum. It becomes.

  When the image on the surface between the mask 6 and the mask 7 is formed on the pattern surface of the sample 11, the pattern surface of the sample 11 is in the in-focus position. In other words, at the in-focus position, the pattern surface of the sample 11 is in a conjugate image relationship with the surface between the mask 6 and the mask 7. At this time, the imaging position of the pattern of the mask 6 and the imaging position of the pattern of the mask 7 are separated from the pattern surface of the sample 11 by a predetermined distance. There is a pattern surface of the sample 11 between these imaging positions. Therefore, the projection pattern of the mask 6 and the projection pattern of the mask 7 are both blurred on the sample 11.

  FIG. 2 is a diagram illustrating the relationship between the imaging positions. In this figure, the Z axis coincides with the optical axis. The imaging position of the pattern of the mask 6 is shifted from the pattern surface of the sample 11. In FIG. 2, F <b> 1 is an imaging position (focus position) of the pattern of the mask 6. Similarly, the imaging position of the pattern of the mask 7 is also shifted from the pattern surface of the sample 11. In FIG. 2, F <b> 2 is an image forming position (focus position) of the pattern of the mask 7. The imaging position (focusing position) of the pattern of the sample 11 is F0 in FIG. Thus, the imaging position F0 of the pattern surface of the sample 11 on the optical axis (Z axis) is between F1 and F2. Therefore, when the imaging position of the pattern surface of the sample 11 is on the light receiving surface of the sensor 13, the imaging position of the pattern of the mask 6 is on the front side of the light receiving surface, and the imaging position of the pattern of the mask 7 is Located behind the light receiving surface.

  As described above, the sample 11 is placed on the stage 14 that can move in the X, Y, and Z directions. Therefore, by moving the stage 14 in the Z direction, the distance between the objective lens 10 and the sample 11 can be changed and the focal position can be adjusted. Specifically, the contrast of the pattern image of the mask 6 detected by the sensor 13 changes by changing the position of the stage 14. Similarly, the contrast of the pattern image of the mask 7 detected by the sensor 13 also changes.

  The sensor 13 detects the reflected light from the first light receiving surface for detecting the reflected light from the pattern of the sample 11, the second light receiving surface for detecting the reflected light from the pattern of the mask 6, and the pattern of the mask 7. And a third light receiving surface. Each light receiving surface is arranged on the same plane (XY plane). In other words, the three light receiving surfaces are arranged on the imaging surface of the imaging optical system b. In addition, the light receiving surfaces are shifted from each other on this plane. That is, in the field of view of the objective lens 10, each light receiving surface receives reflected light from different positions and outputs a detection signal corresponding thereto.

  The sensor 13 includes three independent sensors, that is, a sensor that detects reflected light from the pattern of the sample 11, and a sensor and a mask that are disposed in the vicinity of the sensor and detect reflected light from the pattern of the mask 6. 7 and a sensor for detecting reflected light from the pattern 7. Also in this case, the light receiving surfaces of these sensors are arranged on the same plane (XY plane). In the field of view of the objective lens 10, each sensor receives reflected light from different positions and outputs a detection signal corresponding to the received light.

  FIG. 3 is a diagram showing a detection signal of the sensor 13 for the pattern of the mask 6. FIG. 4 is a diagram showing a detection signal of the sensor 13 for the pattern of the mask 7. In these figures, detection signals at positions F2, F0, and F1 in FIG. 2 are shown in order from the top. The horizontal direction corresponds to the position on the sensor 13 and the vertical direction corresponds to the signal intensity (light reception amount).

  In FIG. 1, when the stage 14 approaches the objective lens 10, the pattern of the mask 6 is imaged on the pattern surface of the sample 11. At this time, the imaging position of the pattern of the sample 11 is F1 in FIG. Therefore, the projection pattern of the mask 6 becomes clear on the sample 11. That is, the projection pattern of the mask 6 on the sample 11 forms an image at a position shifted from the light receiving surface of the sensor 13, but the image formation position of the pattern of the mask 6 coincides with the pattern surface of the sample 11. Here, the illumination optical system a and the imaging optical system b in FIG. 1 have a large detection signal of the sensor 13 for the pattern of the mask 6 when the imaging position of the pattern of the sample 11 is shifted forward from the in-focus position. It is arranged to be. Therefore, when the pattern of the mask 6 forms an image on the pattern surface of the sample 11, the contrast corresponding to the pattern of the mask 6 appears clearly on the sensor 13, and the contrast of the pattern of the mask 6 detected by the sensor 13 is the maximum. (F1 in FIG. 3).

  On the other hand, when the stage 14 approaches the objective lens 10, the projection pattern of the mask 7 becomes blurred on the sample 11. That is, the imaging position of the pattern of the mask 7 is greatly deviated from the pattern surface of the sample 11. Further, the projection pattern of the mask 7 on the sample 11 is also shifted from the light receiving surface of the sensor 13. For this reason, the contrast of the pattern of the mask 7 detected by the sensor 13 becomes low (F1 in FIG. 4).

  Next, when the stage 14 is slightly separated from the objective lens 10, the pattern of the sample 11 forms an image at the position F0 in FIG. 2, that is, the in-focus position. At this time, the projection pattern of the mask 6 on the sample 11 becomes more blurred than when the image forming position of the pattern of the sample 11 is F1. That is, the projection pattern of the mask 6 on the sample 11 forms an image on the light receiving surface of the sensor 13, but the pattern of the mask 6 forms an image at a position shifted from the pattern surface of the sample 11. For this reason, the contrast of the pattern of the mask 6 detected by the sensor 13 is lowered.

  On the other hand, the pattern of the mask 7 in the sensor 13 becomes clearer than when the imaging position of the pattern of the sample 11 is F1. This is because the projection pattern of the mask 7 on the sample 11 forms an image on the light receiving surface of the sensor 13, and the image formation position of the pattern of the mask 7 is more than that when the image formation position of the pattern of the sample 11 is F1. This is because it approaches the pattern surface of the sample 11. Therefore, when the pattern of the sample 11 forms an image at the position F0, the pattern image of the mask 6 and the pattern image of the mask 7 detected by the sensor 13 are blurred to the same extent (F0 in FIG. 3). F0 in FIG. 4).

  Subsequently, when the stage 14 is further away from the objective lens 10, the image forming position of the pattern of the sample 11 becomes F2 in FIG. At this time, the pattern image of the mask 6 detected by the sensor 13 becomes more blurred than when the pattern of the sample 11 is imaged at the position F0. This is because the image forming position of the pattern of the mask 6 is greatly deviated from the pattern surface of the sample 11, and the projection pattern of the mask 6 on the sample 11 is also deviated from the light receiving surface of the sensor 13. Accordingly, the contrast of the pattern of the mask 6 detected by the sensor 13 is lowered to become F2 in FIG.

  On the other hand, the pattern of the mask 7 in the sensor 13 becomes clearer than when the pattern of the sample 11 is imaged at the position F0. In this case, the imaging position of the pattern of the mask 7 projected on the sample 11 is shifted from the light receiving surface of the sensor 13, but the imaging position of the pattern of the mask 7 projected on the sample 11 is the pattern of the sample 11. Match the face. Here, in the illumination optical system a and the imaging optical system b in FIG. 1, when the imaging position of the pattern of the sample 11 is shifted rearward from the in-focus position, the detection signal of the sensor 13 for the pattern of the mask 7 is It is arranged to be larger. Therefore, when the pattern of the mask 7 forms an image on the pattern surface of the sample 11, the contrast corresponding to the pattern of the mask 7 appears clearly on the sensor 13, and the contrast of the pattern of the mask 7 detected by the sensor 13 is maximum. (F2 in FIG. 4).

  In this way, the projection patterns of the mask 6 and the mask 7 are projected onto the pattern surface of the sample 11, the images of these projection patterns are detected by the sensor 13, and the contrast is compared to detect the illumination emitted from the light source 1. The focal position of light can be detected. Next, a method for adjusting the detected focal position so as to be positioned on the pattern surface of the sample 11 will be described.

  FIG. 5 shows the difference between the contrast of the pattern image of the mask 6 and the contrast of the pattern image of the mask 7 detected by the sensor 13. The horizontal axis represents the Z direction, that is, the direction of the optical axis 15 in FIG. The vertical axis represents the difference value (D) obtained by subtracting the contrast value of the mask 6 from the contrast value of the mask 7.

  In FIG. 5, the difference value has a minimum value at the position F1, and the difference value has a maximum value at the position F2. At the position F1, the contrast of the pattern image of the mask 7 is low, but the contrast of the pattern image of the mask 6 is maximized. Therefore, the difference value is minimal at the position F1. On the other hand, at the position F2, the contrast of the pattern image of the mask 6 becomes low, and the contrast of the pattern image of the mask 7 becomes maximum. Therefore, the difference value becomes maximum at the position of F2. The difference value monotonously increases from F1 through F0 to F2.

  In order to adjust the focus, based on the relationship between the imaging position on the optical axis (as shown in FIG. 5) and the difference value, the difference value becomes a predetermined value, that is, the imaging position is F0. To be in the position. Specifically, the stage 14 is moved to change the distance between the sample 11 and the objective lens 10. For example, when the imaging position of the pattern of the sample 11 is shifted in the direction from the in-focus position F0 to F1, the difference value becomes small. Therefore, the stage 14 is moved in the direction in which the difference value increases. On the other hand, when the imaging position of the pattern of the sample 11 is shifted in the direction from the in-focus position F0 to F2, the difference value becomes large. Therefore, the stage 14 is moved in the direction in which the difference value decreases.

  By moving the stage 14 as described above, the focal position can be brought close to the in-focus position (coarse alignment). Subsequently, the position of the stage 14 is finely adjusted so that the focal position is exactly at the in-focus position (fine alignment). Here, when performing rough alignment, it is necessary to widen the detection range of the focal position. On the other hand, when performing fine alignment, it is necessary to increase the detection sensitivity.

  The high sensitivity to the focus position detection means that a large change in the amount of light is exhibited even if it is slightly deviated from the focus position. When the pattern surface of the sample 11 is in the vicinity of the in-focus surface of the sensor 13, the position of this pattern surface is precisely aligned, so that high detection sensitivity is required. On the other hand, in the rough alignment, the detection range has priority over the detection sensitivity with respect to the focal position. In other words, if the detection sensitivity is increased, the pattern is not imaged on the sensor 13 if the amount of deviation from the in-focus position exceeds a predetermined value. This state is not suitable for rough alignment. In the rough alignment, it is preferable that the range of the shift amount that can be imaged on the sensor 13 is large even if the change in the amount of light with respect to the shift amount from the in-focus position is small.

  In the present embodiment, the aperture stop 3 is disposed in the illumination optical system a in order to achieve both high detection sensitivity with respect to the focal position and a wide detection range with the configuration of FIG. When the diameter of the aperture of the aperture stop 3 is changed, the ratio (σ: coherence factor of the illumination optical system) between the numerical aperture (NA) of the illumination optical system a and the numerical aperture (NA) of the detection optical system b changes. The smaller the σ value, the smaller the change in contrast with respect to the deviation from the in-focus position. Therefore, in this case, the range in which the focus position can be detected is widened. On the other hand, when the σ value is increased, a large contrast change is exhibited even if the σ value is slightly shifted from the in-focus position. Therefore, the larger the σ value is, the more suitable it is when high detection sensitivity is required.

In general, when the aperture diameter of the aperture stop of the illumination optical system is φ1, and the aperture diameter of the aperture stop of the imaging optical system is φ2, the σ value is expressed by the following equation.

  In the configuration of FIG. 1, the aperture stop is not provided in the imaging optical system b, so the σ value is determined by the aperture stop 3 of the illumination optical system a. That is, as the diameter of the aperture of the aperture stop 3 increases, the detection sensitivity increases, so that it is suitable for fine alignment. On the other hand, the smaller the aperture diameter of the aperture stop 3 is, the lower the detection sensitivity is, but the wider the detection range is, so that it is suitable for coarse alignment.

  The aperture stop 3 can have a structure in which the diameter of the opening can be changed. Alternatively, a plurality of aperture stops 3 having different opening diameters may be prepared, and the aperture stops 3 having different diameters may be used properly for fine alignment and coarse alignment. In the latter case, the illumination optical system a is preferably configured such that the aperture stop 3 can be inserted and removed from the optical axis 15.

  FIG. 6 is an example of an output waveform of the pattern of the mask 6 in the sensor 13. The horizontal axis represents the position on the sensor 13, and the vertical axis represents the output, that is, the amount of reflected light from the sample 11. The solid line is the output waveform at the in-focus position. When the imaging position is deviated by 1 μm from the in-focus position, the waveform changes greatly and becomes a dotted line. Further, when the imaging position is shifted and the shift amount is 2 μm, the waveform becomes a one-dot dashed line. When the deviation amount is 3 μm, the pattern is not formed on the sensor 13 and a waveform cannot be obtained.

  As described above, the magnitude of the light amount change (contrast change) with respect to the change in the shift amount has a linear relationship with the σ value, and the light amount change increases as the σ value increases. That is, when the σ value is large, the change in the light amount is large even for a slight deviation amount, so that the detection sensitivity is high. On the other hand, when the σ value is small, the change in the amount of light with respect to the shift amount is small. However, in this case, since the pattern does not stop being imaged on the sensor 13 due to a slight change in the shift amount, the detection range is widened. Therefore, when coarse alignment is performed, the aperture of the aperture stop 3 is adjusted to reduce the σ value, and when fine alignment is performed, the aperture of the aperture stop 3 is adjusted so that the σ value is increased. . For example, in the example of FIG. 6, the σ value can be set to 1.0. Here, if the opening of the aperture stop 3 in the coarse alignment is the first diameter and the opening of the aperture stop 3 in the fine alignment is the second diameter, the second diameter is larger than the first diameter.

  FIG. 7 is another example of the output waveform of the pattern of the mask 6 in the sensor 13. In this example, the σ value is 0.2. It can be seen that as the σ value decreases, the change in the amount of light with respect to the shift amount decreases. That is, the waveform does not change as much as FIG. 6 even if the imaging position is deviated by 1 μm, but the output waveform is obtained even when the deviation from the in-focus position is 5 μm.

  The example of FIG. 6 is suitable for fine alignment, and the example of FIG. 7 is suitable for coarse alignment. The output waveform as shown in FIGS. 6 and 7 is also obtained for the pattern of the mask 7. Therefore, using these, the difference value between the contrast of the pattern image of the mask 6 and the contrast of the pattern image of the mask 7 is obtained for each of the fine alignment and the coarse alignment. When adjusting the focal position, the imaging position is first brought close to the in-focus position using the relationship between the imaging position for coarse alignment and the difference value. Subsequently, fine adjustment of the imaging position is performed using the relationship between the imaging position for fine alignment and the difference value. As a result, the imaging position can be accurately set to the in-focus position.

  According to the focus position adjustment method of the present embodiment, it is not necessary to prepare two types of projection patterns for increasing detection sensitivity and projection patterns for widening the detection range. Therefore, a mechanism for switching these projection patterns is also unnecessary. Therefore, it is possible to detect and adjust the focus position with a high detection sensitivity and a wide detection range with a simple configuration.

Embodiment 2. FIG.
In this embodiment, an inspection method using a die-to-database method will be described. Therefore, the reference image to be compared with the optical image to be inspected is a reference image generated from the design pattern data. However, the present invention can also be applied to a die-to-die inspection method, and the reference image in that case is an optical image different from the inspection object.

  FIG. 8 is a schematic configuration diagram of the inspection apparatus according to the present embodiment. In FIG. 8, the same reference numerals as those in FIG. 1 indicate the same parts.

  In FIG. 8, constituent parts necessary for the present embodiment are illustrated, but other known constituent parts necessary for the inspection may be included. In addition, in this specification, what is described as “to part” or “to circuit” can be configured by a computer-operable program. However, not only a software program, but also hardware and software. It may be implemented by a combination or a combination with firmware. When configured by a program, the program is recorded in a recording device such as a magnetic disk device.

  As illustrated in FIG. 1, the inspection apparatus 100 includes a configuration unit A that configures an optical image acquisition unit, and a configuration unit B that performs processing necessary for inspection using the optical image acquired by the configuration unit A. .

  The component A includes the illumination optical system that illuminates the sample 11 on which the pattern to be inspected is formed as the optical system of FIG. 1 described in the first embodiment, that is, the optical system used for adjusting the focal position. And an imaging optical system that forms an image of the illuminated pattern of the sample 11 on the light receiving surface of the sensor 13.

  The illumination optical system includes a light source 1, lenses 2, 4, 5, 8, an aperture stop 3, a mask 6 (first light shielding portion) and a mask 7 (second light) on which a projection pattern for focus position detection is formed. Light-shielding portion), a half mirror 9, and an objective lens 10.

  The mask 6 and the mask 7 are arranged so as to be shifted in the optical axis direction. For example, the mask 6 may have a configuration in which a line and space pattern using a chromium film is formed on a transparent glass substrate. At this time, the line and space pattern may be one type. For example, only a 1 μmL / S pattern is required. Similarly, when another projection pattern is provided instead of the line and space pattern, only one type may be used. The mask 7 has the same configuration as the mask 6. That is, in the above example, the same line and space pattern as the mask 6 is formed on a transparent glass substrate.

  The imaging optical system includes a half mirror 9, an objective lens 10, a lens 12, and a sensor 13. The half mirror 9 and the objective lens 10 are common optical elements for the illumination optical system and the imaging optical system. That is, the optical path of the illumination light and the optical path of the reflected light reflected by the sample 11 are common to the sample 11 to the half mirror 9.

  The sensor 13 detects the reflected light from the first light receiving surface for detecting the reflected light from the pattern of the sample 11, the second light receiving surface for detecting the reflected light from the pattern of the mask 6, and the pattern of the mask 7. And a third light receiving surface. Each light receiving surface is arranged on the same plane (XY plane). In other words, the three light receiving surfaces are arranged on the image forming surface of the image forming optical system. In addition, the light receiving surfaces are shifted from each other on this plane. That is, in the field of view of the objective lens 10, each light receiving surface receives reflected light from different positions and outputs a detection signal corresponding thereto.

  The sensor 13 includes three independent sensors, that is, a sensor that detects reflected light from the pattern of the sample 11, and a sensor and a mask that are disposed in the vicinity of the sensor and detect reflected light from the pattern of the mask 6. 7 and a sensor for detecting reflected light from the pattern 7. Also in this case, the light receiving surfaces of these sensors are arranged on the same plane (XY plane). In the field of view of the objective lens 10, each sensor receives reflected light from different positions and outputs a detection signal corresponding to the received light.

  The component A includes a stage 14 that can move in the X direction, the Y direction, and the Z direction, a sensor circuit 106, a laser length measurement system 122, and an autoloader 130. The stage 14 is composed of an XY stage that can move in the horizontal direction (X direction, Y direction) and a Z stage that is placed on the XY stage and can move in the vertical direction (Z direction). Can do. The XY stage can be configured to be movable also in the rotation direction (θ direction).

  The sample 11 to be inspected is placed on the stage 14. In the present embodiment, the sample 11 is a mask used when a fine circuit pattern is transferred to a wafer, a glass substrate, or the like. However, the sample 11 is not limited to the mask, and may be a wafer or a glass substrate to which the pattern on the mask is transferred.

  In the component A, an optical image of the sample 11, that is, mask collection data is acquired. The mask collection data is an image of a mask on which a graphic based on graphic data included in the design pattern data of the sample 11 is drawn. For example, the mask collection data is 8-bit unsigned data and represents the brightness gradation of each pixel.

  The sample 11 is placed on the stage 14 by the autoloader 130. The autoloader 130 is driven by the autoloader control circuit 113. The autoloader control circuit 113 is controlled by the control computer 110. When the sample 11 is placed on the stage 14, the pattern formed on the sample 11 is irradiated with light from the light source 1 disposed below the stage 14. More specifically, the light beam irradiated from the light source 1 is irradiated to the sample 11 through the illumination optical system. The light reflected by the sample 11 forms an image on the sensor 13 by the imaging optical system.

  In order to obtain an optical image suitable for inspection, it is important to accurately detect and focus the focal position of the light irradiated on the sample 11. Therefore, in the inspection apparatus 100, the aperture stop 3 is disposed in the illumination optical system in order to achieve both high detection sensitivity for the focal position and a wide detection range.

  It is preferable that the aperture stop 3 has a structure in which the diameter of the opening can be changed. Alternatively, the inspection apparatus 100 may include a plurality of aperture stops 3 having different opening diameters. In this case, the illumination optical system is configured so that the aperture stop 3 can be inserted and removed from the optical axis, and the aperture stop 3 having an appropriate diameter is used depending on whether fine alignment or coarse alignment is performed when focusing. To do.

  When the diameter of the aperture of the aperture stop 3 is changed, the ratio (σ: coherence factor of the illumination optical system) between the numerical aperture (NA) of the illumination optical system and the numerical aperture (NA) of the detection optical system is changed. The smaller the σ value, the smaller the change in contrast with respect to the deviation from the in-focus position. Therefore, in this case, the range in which the focus position can be detected is widened. On the other hand, when the σ value is increased, a large contrast change is exhibited even if the σ value is slightly shifted from the in-focus position. Therefore, the larger the σ value is, the more suitable it is when high detection sensitivity is required.

  The σ value suitable for the fine alignment and the σ value suitable for the coarse alignment are determined beforehand by the specifications of the inspection apparatus 100, for example, the assumed pattern size of the sample 11 (line width of the mask pattern, etc.), It is determined in consideration of the number of pixels, the specifications of the objective lens 10, and the like. Then, the diameter of the aperture of the aperture stop 3 is changed so as to correspond to these values. Alternatively, an aperture stop 3 having a diameter corresponding to these values is prepared and used depending on whether fine alignment or coarse alignment is performed. When the opening of the aperture stop 3 in the coarse alignment is the first diameter and the opening of the aperture stop 3 in the fine alignment is the second diameter, the second diameter is larger than the first diameter.

  The inspection apparatus 100 may be configured to irradiate light from above the sample 11 and guide the transmitted light to the sensor 13. By combining this configuration with the configuration shown in FIG. 8, it is possible to simultaneously acquire optical images by transmitted light and reflected light.

  The pattern image of the sample 11 formed on the sensor 13 is photoelectrically converted and then A / D (analog / digital) converted by the sensor circuit 106. Examples of the sensor 13 include a TDI (Time Delay Integration) sensor.

  In the configuration part B of the inspection apparatus 100, a control computer 110 serving as a control unit that controls the entire inspection apparatus 100 is connected to a position circuit 107 and a comparison circuit 108 as an example of a comparison part via a bus 120 serving as a data transmission path. A reference circuit 112 as an example of a reference image generation unit, a development circuit 111, a focus position adjustment circuit 125 as an example of a focus position adjustment unit, an autoloader control circuit 113, a stage control circuit 114, and a magnetic disk device as an example of a storage unit 109, a network interface 115 and a flexible disk device 116, a liquid crystal display 117, a pattern monitor 118, and a printer 119. The stage 14 is driven by an X-axis motor, a Y-axis motor, and a Z-axis motor controlled by the stage control circuit 114. For example, an air slider and a linear motor or a step motor can be used in combination for these drive mechanisms.

  As described above, what is described as “˜circuit” in FIG. 8 can be configured by a program operable by a computer, but not only a program to be software but also a combination of hardware and software or firmware It may be implemented by a combination. When configured by a program, the program can be recorded on the magnetic disk device 109. For example, each circuit in the sensor circuit 106, the autoloader control circuit 113, the stage control circuit 114, the focus position adjustment circuit 125, the development circuit 111, the reference circuit 112, the comparison circuit 108, and the position circuit 107 is configured by an electrical circuit. Alternatively, it may be realized as software that can be processed by the control computer 110. Further, it may be realized by a combination of an electric circuit and software.

  The focal position adjustment circuit 125 receives information from the sensor circuit 106 and detects the focal position. Specifically, the image information of the projection patterns of the mask 6 and the mask 7 projected on the pattern surface of the sample 11 is received, and these contrasts are compared as described in the first embodiment. Thereby, the focal position of the illumination light emitted from the light source 1 is detected.

  Further, the focus position adjustment circuit 125 adjusts the position of the stage 14 in the Z direction via the stage control circuit 114 so that the detected focus position is located on the pattern surface of the sample 11. This adjustment is performed in the order of coarse alignment and fine alignment.

  The focal position adjustment circuit 125 stores in advance data obtained for the fine alignment and the coarse alignment for the difference value between the contrast of the pattern image of the mask 6 and the contrast of the pattern image of the mask 7. When adjusting the focal position, first, the detected focal position is brought close to the in-focus position using the relationship between the imaging position for coarse alignment and the difference value. Subsequently, fine adjustment of the focal position is performed using the relationship between the imaging position for fine alignment and the difference value.

  The control computer 110 reads position information for coarse alignment and position information for fine alignment from the focus position adjustment circuit 125. Based on this information, the stage control circuit 114 is controlled to move the stage 14 in the Z direction. As a result, the focal position can be accurately set to the in-focus position.

  Further, the control computer 110 controls the stage control circuit 114 to drive the stage 14 also in the X direction and the Y direction. The moving position of the stage 14 in the XY directions is measured by the laser length measurement system 122 and sent to the position circuit 107.

  Further, the control computer 110 controls the autoloader control circuit 113 to drive the autoloader 130. The autoloader 130 automatically transports the sample 11 and automatically unloads the sample 11 after the inspection is completed.

  Design pattern data serving as database-based reference data is stored in the magnetic disk device 109, read out as the inspection progresses, and sent to the development circuit 111. Specifically, it is as follows.

  CAD data created by a designer (user) is converted into design intermediate data in a hierarchical format such as OASIS. In the design intermediate data, design pattern data created for each layer and formed on the sample is stored. Here, in general, the inspection apparatus is not configured to directly read OASIS data. That is, unique format data is used for each manufacturer of the inspection apparatus. For this reason, the OASIS data is input to the inspection apparatus after being converted into format data specific to each inspection apparatus for each layer. The format data can be data specific to the inspection apparatus, but can also be data compatible with a drawing apparatus used to draw a pattern on the sample.

  In FIG. 8, the format data is input to the magnetic disk device 109. That is, the design pattern data used when forming the pattern of the sample 11 is stored in the magnetic disk device 109.

  The figure included in the design pattern is a basic figure of a rectangle or a triangle. The magnetic disk device 109 includes, for example, information such as coordinates (x, y) at a reference position of a figure, a side length, and a figure code that serves as an identifier for distinguishing a figure type such as a rectangle or a triangle. Graphic data defining the shape, size, position, etc.

  Furthermore, a set of figures existing in a range of about several hundred μm is generally called a cluster or a cell, and data is hierarchized using this. In the cluster or cell, arrangement coordinates and repeated descriptions are also defined when various figures are arranged independently or repeatedly at a certain interval. The cluster or cell data is further arranged in a strip-shaped region called a stripe having a width of several hundred μm and a length of about 100 mm corresponding to the total length of the sample 11 in the X direction or Y direction.

  As described above, the design pattern data is stored in the format data input to the magnetic disk device 109. This design pattern data is read from the magnetic disk device 109 by the development circuit 111 through the control computer 110.

  In the development circuit 111, the design pattern data is converted into image data (bit pattern data). That is, the expansion circuit 111 expands the design pattern data to data for each graphic, and interprets graphic codes, graphic dimensions, etc., indicating the graphic shape of the graphic data. Then, it is developed into binary or multi-valued image data as a pattern arranged in a grid having a grid with a predetermined quantization dimension as a unit. Further, the occupation ratio occupied by the graphic in the design pattern is calculated for each area (square) corresponding to the sensor pixel, and the graphic occupation ratio in each pixel becomes a pixel value.

  The image data converted by the expansion circuit 111 is sent to a reference circuit 112 as a reference image generation unit, and is used to generate a reference image (also referred to as reference data).

  The mask collection data output from the sensor circuit 106 is sent to the comparison circuit 108 together with data indicating the position of the sample 11 on the stage 14 output from the position circuit 107. Further, the reference image described above is also sent to the comparison circuit 108.

  In the comparison circuit 108, the mask collection data and the reference data are compared using an appropriate comparison determination algorithm. In the configuration of FIG. 1, the comparison is made between the reflected images, but in the configuration using the transmission optical system, a comparison between the transmission images or a comparison determination algorithm that combines transmission and reflection is used. . As a result of the comparison, when the difference between the two exceeds a predetermined threshold value, the location is determined as a defect.

  The above-described stripe is divided into an appropriate size and becomes a sub-stripe. Then, the sub stripes cut out from the mask collection data and the sub stripes cut out from the reference image corresponding to the mask collection data are input to the comparison unit in the comparison circuit 108. The inserted sub-stripes are further divided into rectangular small areas called inspection frames, and the comparison unit compares them in units of frames to detect defects. The comparison circuit 108 is equipped with several tens of comparison units so that a plurality of inspection frames are processed simultaneously in parallel. Each comparison unit captures an unprocessed frame image as soon as one inspection frame is processed. As a result, a large number of inspection frames are sequentially processed.

  According to such an inspection apparatus of the present embodiment, it is not necessary to prepare two types of projection patterns for increasing the focus position detection sensitivity and projection patterns for widening the focus position detection range. Therefore, a mechanism for switching these projection patterns is also unnecessary. Therefore, although it has a simple configuration, it is possible to detect the focal position in a high detection sensitivity and a wide detection range, so that inspection can be performed with high accuracy.

  Next, an example of a method for inspecting the sample 11 using the inspection apparatus 100 of FIG. 8 will be described.

<Focus position adjustment process>
First, as described in the first embodiment, the sample 11 is irradiated with the light from the light source 1 to detect the focal position, and the detected position is adjusted to be the in-focus position.

  Specifically, the projection patterns of the mask 6 and the mask 7 are projected onto the pattern surface of the sample 11, and images of these projection patterns are detected by the sensor 13. Here, the sensor 13 is divided into a part for detecting reflected light from the pattern of the sample 11, a part for detecting reflected light from the pattern of the mask 6, and a part for detecting reflected light from the pattern of the mask 7. Each part receives reflected light from different positions in the field of view of the objective lens 10 and outputs a detection signal corresponding to the received light.

  The focal position is detected by comparing the contrast of the projected pattern image detected by the sensor 13. Specifically, the pattern image of the sample 11 formed on the sensor 13 is photoelectrically converted and then A / D (analog / digital) converted by the sensor circuit 106. The focal position adjustment circuit 125 receives information from the sensor circuit 106 and detects the focal position.

  For example, if the stage 14 is too close to the objective lens 10, the pattern of the mask 6 forms an image on the pattern surface of the sample 11. At this time, brightness and darkness corresponding to the pattern of the mask 6 appears clearly on the sensor 13. The contrast of the pattern of the mask 6 detected by the sensor 13 is, for example, as shown in F1 of FIG. 3 described in the first embodiment. On the other hand, the image forming position of the pattern of the mask 7 is greatly deviated from the pattern surface of the sample 11, and the projection pattern of the mask 7 on the sample 11 is also deviated from the light receiving surface of the sensor 13. For example, the contrast of the pattern 7 is low as shown by F1 in FIG.

  When the pattern of the sample 11 forms an image at the in-focus position, the projection pattern of the mask 6 on the sample 11 becomes more blurred than when the image formation position of the pattern of the sample 11 is in the state of F1. For this reason, the contrast of the pattern of the mask 6 detected by the sensor 13 is lowered. On the other hand, the pattern of the mask 7 in the sensor 13 becomes clearer than when the imaging position of the pattern of the sample 11 is in the state F1. That is, when the pattern of the sample 11 forms an image at the in-focus position, the pattern image of the mask 6 and the pattern image of the mask 7 detected by the sensor 13 are as indicated by F0 in FIG. 3 and F0 in FIG. It becomes blurry to the same extent.

  If the stage 14 is too far away from the objective lens 10, the pattern image of the mask 6 detected by the sensor 13 becomes more blurred than when the pattern of the sample 11 is imaged at the in-focus position. Therefore, the contrast of the pattern of the mask 6 detected by the sensor 13 is lowered, for example, as indicated by F2 in FIG. On the other hand, the pattern of the mask 7 in the sensor 13 becomes clearer than when the pattern of the sample 11 is imaged at the in-focus position. That is, the light and dark corresponding to the pattern of the mask 7 appears clearly on the sensor 13, and the contrast of the pattern of the mask 7 detected by the sensor 13 becomes maximum, for example, as indicated by F2 in FIG.

  In this way, the projection patterns of the mask 6 and the mask 7 are projected onto the pattern surface of the sample 11, the images of these projection patterns are detected by the sensor 13, and the contrast is compared to detect the illumination emitted from the light source 1. The focal position of light can be detected.

  Next, adjustment is made so that the detected focal position is positioned on the pattern surface of the sample 11. Specifically, the focus position adjustment circuit 125 adjusts the position of the stage 14 in the Z direction via the stage control circuit 114 so that the detected focus position is positioned on the pattern surface of the sample 11. This adjustment is performed in the order of coarse alignment and fine alignment.

  The focal position adjustment circuit 125 stores in advance data obtained for the fine alignment and the coarse alignment for the difference value between the contrast of the pattern image of the mask 6 and the contrast of the pattern image of the mask 7. This data is obtained as follows.

  First, the diameter of the aperture of the aperture stop 3 is changed to obtain the waveform shown in FIGS. 6 and 7 described in the first embodiment, that is, the output waveform of the pattern of the mask 6 in the sensor 13. Similarly, an output waveform of the pattern in the sensor 13 is obtained for the pattern of the mask 7.

  Since the detection sensitivity increases as the diameter of the aperture of the aperture stop 3 increases, it becomes suitable for fine alignment. On the other hand, the smaller the aperture diameter of the aperture stop 3 is, the lower the detection sensitivity is, but the wider the detection range is, so that it is suitable for coarse alignment. That is, if the opening of the aperture stop 3 in the coarse alignment is the first diameter and the opening of the aperture stop 3 in the fine alignment is the second diameter, the second diameter is larger than the first diameter.

  For example, the example of FIG. 6 (σ = 1.0) is suitable for fine alignment, and the example of FIG. 7 (σ = 0.2) is suitable for coarse alignment. In the inspection apparatus 100, the σ value suitable for fine alignment and the σ value suitable for coarse alignment are determined in advance from the specifications of the inspection apparatus 100, for example, the assumed pattern size of the sample 11 (line width of the mask pattern, etc.). ), The number of pixels of the sensor 13, the specification of the objective lens 10, and the like are determined.

  Next, using the output waveform of the obtained pattern, a difference value between the contrast of the pattern image of the mask 6 and the contrast of the pattern image of the mask 7 is obtained for each of the fine alignment and the coarse alignment.

  When adjusting the focal position, the imaging position is first brought close to the in-focus position using the relationship between the imaging position for coarse alignment and the difference value. Subsequently, fine adjustment of the imaging position is performed using the relationship between the imaging position for fine alignment and the difference value.

  The control computer 110 reads position information for coarse alignment and position information for fine alignment from the focus position adjustment circuit 125. Based on this information, the stage control circuit 114 is controlled to move the stage 14 in the Z direction. As a result, the focal position can be accurately set to the in-focus position.

  According to such a focus position adjusting method, it is not necessary to prepare two types of projection patterns for increasing the detection sensitivity and projection patterns for increasing the detection range in the inspection apparatus 100. Therefore, it is not necessary to provide the inspection apparatus 100 with a mechanism for switching these projection patterns. Therefore, while the inspection apparatus 100 can be configured simply, the inspection apparatus 100 can detect and adjust the focal position with high detection sensitivity and a wide detection range.

<Optical image acquisition process>

  After the focus position is detected and the adjustment is completed as described above, an optical image of the sample 11 is acquired by the component A in FIG. If the aperture stop 3 is not used for any purpose other than the above, the aperture stop 3 is not necessary in this step, so that the diameter does not affect the thickness of the light beam from the light source 1 or the illumination optical system. Can be removed from. It is possible to leave the aperture stop 3 in the illumination optical system so that it can be used according to the purpose.

  FIG. 9 is a diagram for explaining a procedure for acquiring an optical image of a pattern formed on the sample 11.

In FIG. 9, it is assumed that the sample 11 is placed on the stage 14 of FIG. Further, as shown in FIG. 9, the inspection area on the sample 11 is virtually divided into a plurality of strip-shaped inspection areas, that is, stripes 20 ₁ , 20 ₂ , 20 ₃ , 20 ₄ ,. Yes. Each stripe can be, for example, a region having a width of several hundred μm and a length of about 100 mm corresponding to the entire length of the sample 11 in the X direction or the Y direction.

An optical image is acquired for each stripe. That is, when the optical image is acquired in FIG. 9, the operation of the stage 14 is controlled so that each of the stripes 20 ₁ , 20 ₂ , 20 ₃ , 20 ₄ ,. Specifically, an optical image of the sample 11 is acquired while the stage 14 moves in the −X direction in FIG. 9. Then, an image having a scanning width W as shown in FIG. 9 is continuously input to the sensor 13 in FIG. That is, after acquiring the image in the first stripe 20 _1, to obtain the image in the second stripe 20 _2. In this case, the stage 14 was moved stepwise in the -Y direction, an optical image acquired while moving in the opposite direction (X direction) and the first stripe 20 in _one direction at the time of acquisition of the image in the (-X direction) Thus, an image having a scanning width W is continuously input to the sensor 13. When acquiring the image of the third stripes 20 _3, after the stage 14 has moved stepwise in the -Y direction, and the direction (X direction) to obtain the image in the second stripe 20 ₂ backward, i.e., stage 14 moves the image in the direction (-X direction) that has acquired the in the first stripe 20 _1. In addition, the arrow of FIG. 9 has shown the direction and order where an optical image is acquired, and the oblique line part represents the area | region which acquired the optical image.

  The pattern image formed on the sensor 13 in FIG. 8 is photoelectrically converted and further A / D (analog-digital) converted by the sensor circuit 106. Thereafter, the optical image is sent from the sensor circuit 106 to the comparison circuit 108 of FIG.

  The A / D converted sensor data is input to a digital amplifier (not shown) capable of offset / gain adjustment for each pixel. The gain for each pixel of the digital amplifier is determined in the calibration process. For example, in the calibration process for transmitted light, the black level is determined during photographing of the light-shielding region of the sample 11 that is sufficiently large with respect to the area captured by the sensor. Next, the white level is determined during imaging of the transmitted light region of the sample 11 that is sufficiently large with respect to the area imaged by the sensor. At this time, in anticipation of light quantity fluctuation during inspection, for example, the offset of each pixel is set so that the amplitude of the white level and the black level is distributed from 10% to 240% corresponding to about 4% to about 94% of the 8-bit gradation data. And adjust the gain.

<Reference image generation process>
(1) Storage process In the case of inspection by the die-to-database comparison method, a reference for defect determination is a reference image generated from design pattern data. In the inspection apparatus 100, design pattern data used when the pattern of the sample 11 is formed is stored in the magnetic disk device 109.

(2) Development Step In the development step, the development circuit 111 of FIG. 8 reads design pattern data from the magnetic disk device 109 through the control computer 110, and the read design pattern data of the sample 11 is binary or multivalued. Convert to image data (design image data). This image data is sent to the reference circuit 112.

(3) Filter processing step In the filter processing step, the reference circuit 112 shown in FIG. 8 applies appropriate filter processing to design pattern data, which is graphic image data. The reason is as follows.

  The pattern of the sample 11 is not exactly coincident with the design pattern because the rounded corners and the finished dimensions of the line width are adjusted in the manufacturing process. Further, the mask sampling data as an optical image obtained from the sensor circuit 106 in FIG. 8 is blurred due to the resolution characteristics of the optical system, the aperture effect of the sensor 13, or the like, in other words, a spatial low-pass filter is applied. Is in a state.

  Therefore, prior to the inspection, a mask to be inspected is observed, a filter coefficient that simulates a change in the manufacturing process and the optical system of the inspection apparatus is learned, and a two-dimensional digital filter is applied to the design pattern data. In this manner, the reference image is processed to resemble the optical image.

  The learning of the filter coefficient may be performed using a mask pattern serving as a reference determined in the manufacturing process, or using a part of the pattern of the mask to be inspected (sample 11 in this embodiment). You may go. In the latter case, a filter coefficient based on the pattern line width of the area used for learning and the degree of rounded corners is acquired and reflected in the defect determination standard for the entire mask.

  Note that when a mask to be inspected is used for learning the filter coefficient, there is an advantage that it is possible to learn the filter coefficient that eliminates the influence of variations in manufacturing lots and fluctuations in the condition of the inspection apparatus. However, if there is a dimensional variation in the mask plane, the optimum filter coefficient is used for the part used for learning, but it is not necessarily the optimum coefficient for other areas. Can be. Therefore, it is preferable to learn near the center of the mask which is not easily affected by dimensional variations in the plane. Alternatively, learning may be performed at a plurality of locations in the mask surface, and an average value of a plurality of obtained filter coefficients may be used.

<Die-to-database comparison process>
The mask collection data acquired in the optical image acquisition process is sent from the sensor circuit 106 to the comparison circuit 108. Further, reference data is sent from the reference circuit 112 to the comparison circuit 108. In the comparison circuit 108, the mask collection data and the reference data are compared by a die-to-database method. Specifically, the captured stripe data is cut out in units of inspection frames, and is compared for each inspection frame with data serving as a reference for defect determination using an appropriate comparison determination algorithm. Then, when the difference between the two exceeds a predetermined threshold, it is determined as a defect. Information about the defect is stored as a mask inspection result. For example, the control computer 110 stores the coordinates of the defect, the optical image that is the basis for the defect determination, and the like in the magnetic disk device 109.

  For example, it is assumed that a lattice chip pattern is formed on the sample 11. When the n-th chip is considered as an inspection object, in the die-to-database comparison method, the difference between the pattern in the optical image of the n-th chip and the pattern in the reference image of the n-th chip exceeds a predetermined threshold. It is determined as a defect.

  More specifically, the defect determination can be performed by the following two types of methods. One is a method of determining a defect when a difference exceeding a predetermined threshold dimension is recognized between the position of the contour line in the reference image and the position of the contour line in the optical image. The other is a method of determining a defect when the ratio between the line width of the pattern in the reference image and the line width of the pattern in the optical image exceeds a predetermined threshold. In this method, the ratio between the distance between patterns in the reference image and the distance between patterns in the optical image may be targeted.

<Review process and correction process>
The stored mask inspection result is sent to the review apparatus. The review device may be one of the components of the inspection device or may be an external device of the inspection device. The review is an operation for determining whether or not the detected defect is a practical problem. The operator, for example, compares the reference image that is the basis for the defect determination with the optical image including the defect, and determines whether the defect needs to be corrected.

  The defect information determined through the review process is stored in the magnetic disk device 109 of FIG. When at least one defect to be corrected is confirmed by the review device, the sample 11 is sent to a correction device which is an external device of the inspection device 100 together with the defect information list. Since the correction method differs depending on whether the defect type is a convex defect or a concave defect, the defect type and the defect coordinates including the distinction between the irregularities are attached to the defect information list.

  According to the inspection method of the present embodiment described above, there is no need to prepare two types of projection patterns for increasing the focus position detection sensitivity and projection patterns for widening the focus position detection range. Therefore, a mechanism for switching these projection patterns is also unnecessary. Therefore, although it has a simple configuration, it is possible to detect the focal position in a high detection sensitivity and a wide detection range, so that inspection can be performed with high accuracy.

  The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

  Further, in each of the above embodiments, description of parts that are not directly required for the description of the present invention, such as a device configuration and a control method, is omitted, but a necessary device configuration and a control method are appropriately selected and used. Needless to say, you can. In addition, all inspection methods or inspection apparatuses that include the elements of the present invention and that can be appropriately modified by those skilled in the art are included in the scope of the present invention.

a illumination optical system b imaging optical system 1 light source 2, 4, 5, 8, 12 lens 3 aperture stop 6, 7 mask 9 half mirror 10 objective lens 11 sample 13 sensor 14 stage 15 optical axis 20 ₁ , 20 ₂ , 20 ₃ , 20 ₄ stripes 100 inspection device 106 sensor circuit 107 position circuit 108 comparison circuit 109 magnetic disk device 110 control computer 111 development circuit 112 reference circuit 113 autoloader control circuit 114 stage control circuit 115 network interface 116 flexible disk device 117 liquid crystal display 118 pattern Monitor 119 Printer 120 Bus 122 Laser length measurement system 125 Focus position adjustment circuit 130 Autoloader

Claims (8)

There is an illumination optical system that illuminates the sample with light from the light source through the objective lens, and an imaging optical system that forms an image on the sensor through the objective lens with the light reflected by the sample or transmitted through the sample. A focus position adjustment method in an inspection apparatus that performs defect inspection of a pattern formed on the sample using an image formed on the sensor,
Light that illuminates the sample is emitted from the light source, is incident on an aperture stop provided at a position conjugate with the pupil of the illumination optical system, and is then incident on a first light shielding portion provided with a light shielding pattern. After that, the first light shielding pattern has the same pattern as the light shielding pattern and is provided at a position that does not overlap with the light shielding pattern on a plane perpendicular to the optical axis. The first light-shielding part is made incident on a second light-shielding part that is arranged so as to be shifted from the part, and an image of the first light-shielding part is formed in front of the pattern surface of the sample, and the image of the second light-shielding part is A step of forming an image behind the pattern surface of the sample;
The image of the first light-shielding portion projected on the sample is provided on the same plane as the first light-receiving surface that forms an image of the pattern of the sample of the sensor via the objective lens. Forming an image on the two light-receiving surfaces;
The second light-shielding portion image projected onto the sample is provided on the same plane as the first light-receiving surface that forms an image of the sample pattern of the sensor via the objective lens. 3 forming an image on the light receiving surface;
Detecting a focal position based on the contrast of the image formed on the second light receiving surface and the contrast of the image formed on the third light receiving surface;
A difference value between the contrast of the image formed on the second light receiving surface and the contrast of the image formed on the third light receiving surface when the opening of the aperture stop has the first diameter; The contrast of the image formed on the second light receiving surface and the image formed on the third light receiving surface when the aperture of the aperture stop has a second diameter larger than the first diameter. And a step of adjusting the focal position based on a difference value from contrast. In the step of adjusting the focal position, the contrast of the image formed on the second light receiving surface when the aperture of the aperture stop is the first diameter and the image formed on the third light receiving surface Using the difference value with the contrast of the image made, the step of bringing the focal position close to the in-focus position;
The difference value between the contrast of the image formed on the second light receiving surface and the contrast of the image formed on the third light receiving surface when the opening of the aperture stop is the second diameter; The focus position adjusting method according to claim 1, further comprising: finely adjusting the focus position that is brought close to the vicinity of the in-focus position based on the focus position. The aperture stop is configured to change the diameter of the opening,
The focal position adjustment method according to claim 1 or 2, wherein, in the step of adjusting the focal position, the diameter of the opening is changed to the first diameter and the second diameter.   In the step of adjusting the focal position, two types of aperture stops are used: an aperture stop having an opening with the first diameter and an aperture stop having an opening with the second diameter. The focal position adjustment method according to claim 1 or 2. There is an illumination optical system that illuminates the sample with light from the light source through the objective lens, and an imaging optical system that forms an image on the sensor through the objective lens with the light reflected by the sample or transmitted through the sample. An inspection method for inspecting a defect of a pattern formed on the sample by using an image formed on the sensor,
Light that illuminates the sample is emitted from the light source, is incident on an aperture stop provided at a position conjugate with the pupil of the illumination optical system, and is then incident on a first light shielding portion provided with a light shielding pattern. After that, the first light shielding pattern has the same pattern as the light shielding pattern and is provided at a position that does not overlap with the light shielding pattern on a plane perpendicular to the optical axis. The first light-shielding part is made incident on a second light-shielding part that is arranged so as to be shifted from the part, and an image of the first light-shielding part is formed in front of the pattern surface of the sample, and the image of the second light-shielding part is A step of forming an image behind the pattern surface of the sample;
The image of the first light-shielding portion projected on the sample is provided on the same plane as the first light-receiving surface that forms an image of the pattern of the sample of the sensor via the objective lens. Forming an image on the two light-receiving surfaces;
The second light-shielding portion image projected onto the sample is provided on the same plane as the first light-receiving surface that forms an image of the sample pattern of the sensor via the objective lens. 3 forming an image on the light receiving surface;
Detecting a focal position based on the contrast of the image formed on the second light receiving surface and the contrast of the image formed on the third light receiving surface;
A difference value between the contrast of the image formed on the second light receiving surface and the contrast of the image formed on the third light receiving surface when the opening of the aperture stop has the first diameter; The contrast of the image formed on the second light receiving surface and the image formed on the third light receiving surface when the aperture of the aperture stop has a second diameter larger than the first diameter. A step of adjusting the focal position based on a difference value with contrast;
Forming the image of the pattern of the sample on the first light receiving surface by the illumination optical system from which the aperture stop is removed and the imaging optical system after the adjustment of the focal position; ,
And a step of performing a defect inspection of a pattern formed on the sample using an image formed on the first light receiving surface. In the step of adjusting the focal position, the contrast of the image formed on the second light receiving surface when the aperture of the aperture stop is the first diameter and the image formed on the third light receiving surface Using the difference value with the contrast of the image made, the step of bringing the focal position close to the in-focus position;
The difference value between the contrast of the image formed on the second light receiving surface and the contrast of the image formed on the third light receiving surface when the opening of the aperture stop is the second diameter; The method according to claim 5, further comprising: finely adjusting the focal position that is brought close to the vicinity of the in-focus position based on the above. The aperture stop is configured to change the diameter of the opening,
The inspection method according to claim 5 or 6, wherein, in the step of adjusting the focal position, the diameter of the opening is changed to the first diameter and the second diameter. In the step of adjusting the focal position, two types of aperture stops are used: an aperture stop having an opening with the first diameter and an aperture stop having an opening with the second diameter. The inspection method according to claim 5 or 6.