JP2014178875A - Ic package, ic module, and non-contact ic card - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce a possibility that an IC chip is destroyed by an impact force from the outside without increasing a thickness.SOLUTION: An IC chip 10 mounted on a lead frame 11 is sealed by a sealing resin 14. On a surface on the side opposite to the lead frame 11 of the sealing resin 14, a reinforcing layer 15 is provided through an adhesive layer 16.

Description

  The present invention relates to an IC package incorporating an IC chip. The present invention also relates to an IC module on which the IC package is mounted. Furthermore, the present invention relates to a non-contact IC card provided with the IC module.

  As an information recording card such as an ID card or a credit card, an IC card incorporating an IC chip is used because it is advantageous for preventing forgery, increasing recording information, and encrypting information. Furthermore, a non-contact IC card that performs exchange of information with respect to the IC card and power supply to the IC chip through electromagnetic waves is being put into practical use. The non-contact IC card incorporates an antenna circuit that generates an induced electromotive force due to electromagnetic waves generated by the reader / writer.

  Such a non-contact IC card is desired to have a structure in which the IC chip is not broken by an impact force applied from the outside.

  In Patent Document 1, an IC chip mounted on an insulating substrate made of a flexible resin sheet such as polyethylene terephthalate is sealed with a sealing resin, and is made of metal so as to face the IC chip across the sealing resin. A non-contact IC card provided with a reinforcing plate is described. Patent Document 1 discloses a structure in which one reinforcing plate is disposed only on the side opposite to the insulating substrate with respect to the IC chip, and two reinforcing plates are disposed on both sides of the IC chip and the insulating substrate. The structure is described.

JP 2002-366922 A

  Since the reinforcing plate relieves the impact force by disposing the reinforcing plate facing the IC chip as in Patent Document 1, the possibility that the IC chip is broken by the impact force can be reduced.

  However, in a structure in which one reinforcing plate is disposed only on one side of the IC chip, there is a possibility that the IC chip is broken by an impact force applied from the side where the reinforcing plate is not provided. On the other hand, the structure in which the two reinforcing plates are arranged with the IC chip and the insulating substrate interposed therebetween is thick, so that only the portion provided with the reinforcing plate on the outer surface of the IC card is raised. This lowers the appearance quality of the IC card and also reduces the printability on the outer surface of the IC card.

  An object of the present invention is to provide an IC package in which the possibility that an IC chip is destroyed by an impact force from the outside world is reduced without causing an increase in thickness. Another object of the present invention is to provide an IC module and a non-contact IC card that are thin and have excellent impact resistance.

  The IC package of the present invention is an IC package comprising a lead frame, an IC chip mounted on the lead frame, and a sealing resin for sealing the IC chip, wherein the lead of the sealing resin A reinforcing layer is provided on the surface opposite to the frame via an adhesive layer.

  An IC module of the present invention includes the above-described IC package of the present invention and an antenna circuit connected to a terminal portion of the lead frame.

  The non-contact IC card of the present invention includes the above-described IC module of the present invention.

  The impact force applied to the IC package acts to bend and deform the IC package so that the surface to which the impact force is applied becomes a concave curved surface, and the opposite surface becomes a convex curved surface. At this time, a tensile force acts on the surface opposite to the surface to which the impact force is applied.

  In the IC package of the present invention, when an impact force is applied to the surface on the reinforcing layer side, the lead frame on the side opposite to the side subjected to the impact force is not easily broken even if it is deformed. The agent absorbs elongation deformation and bending deformation of the lead frame, thereby preventing the IC chip from being broken.

  On the other hand, when an impact force is applied to the surface on the lead frame side, a reinforcing layer that is difficult to stretch and deform is provided on the side opposite to the side receiving the impact force. By preventing the adhesive layer from being displaced, bending deformation of the IC package at the time of impact can be suppressed. For this reason, destruction of the IC chip is prevented.

  Therefore, in the IC package of the present invention, the possibility that the IC chip is broken by the impact force from the outside world is reduced.

  Further, since the reinforcing layer is provided only on the side opposite to the lead frame with respect to the IC chip, the IC package of the present invention has an increased thickness despite having an impact resistance. Can be avoided.

  Since the IC module and the non-contact IC card of the present invention include the above-described IC package of the present invention, the IC module and the non-contact IC card are thin and excellent in impact resistance.

FIG. 1A is a cross-sectional view of an IC package according to an embodiment of the present invention, and FIG. 1B is a bottom view thereof. 2A and 2B are cross-sectional views showing a process for manufacturing the IC chip of the present invention. 3A to 3C are cross-sectional views showing a process of manufacturing the IC chip of the present invention using an adhesive paste. 4A to 4C are cross-sectional views showing a process for manufacturing the IC chip of the present invention using an adhesive sheet. FIG. 5A is a cross-sectional view of an IC module according to an embodiment of the present invention. FIG. 5B is a cross-sectional view of an IC module according to another embodiment of the present invention. FIG. 6 is a cross-sectional view showing a schematic configuration of an embodiment of a non-contact IC card using the IC chip of the present invention. FIG. 7 is a cross-sectional view of an IC package according to a comparative example. FIG. 8 is a diagram schematically showing a cut surface in the thickness direction of a sample according to a comparative example determined to be defective in the impact test.

  The IC package of the present invention is an IC package comprising a lead frame, an IC chip mounted on the lead frame, and a sealing resin for sealing the IC chip, wherein the lead of the sealing resin A reinforcing layer is provided on the surface opposite to the frame via an adhesive layer.

  In the IC package of the present invention, the reinforcing layer preferably has a Vickers hardness of 200 or more or an elastic modulus of 5 GPa or more. Thereby, the possibility that the IC chip and the sealing resin are destroyed by the impact force applied to the IC package from the lead frame side can be further reduced.

  The reinforcing layer preferably has a thickness of 0.05 mm or less. This is advantageous for reducing the thickness of a non-contact IC card using the IC package of the present invention.

  The adhesive layer preferably has an elastic modulus of 0.8 GPa or more, or a hardness of 80 or more (JIS D or Shore D). Thereby, the possibility that the IC chip and the sealing resin are destroyed by the impact force applied to the IC package from the lead frame side can be further reduced.

  The IC chip is preferably fixed to the lead frame via a die bond agent. Thereby, the mounting of the IC chip on the lead frame can be easily performed using a general-purpose facility.

  In this case, the die-bonding agent has flexibility with a hardness (JIS A or Shore A) of 55 or less, or has a high rigidity (stiffness) with an elastic modulus of 1 GPa or more. It is preferable. If the die bond agent has the above-mentioned flexibility, the die bond agent absorbs the impact force and the deformation of the lead frame caused by the impact force. Therefore, the possibility that the IC chip is destroyed by the impact force can be further reduced. . When the die bond agent has the above-described high rigidity, the die bond agent suppresses the deformation of the lead frame, so that the possibility that the IC chip is broken by an impact force can be further reduced.

  The lead frame preferably has a Vickers hardness of 135 or more. Thereby, the possibility that the IC chip is broken by the impact force applied to the IC package from the reinforcing layer side can be further reduced.

  The thickness of the IC package of the present invention is preferably 0.4 mm or less. This is advantageous for reducing the thickness of a non-contact IC card using the IC package of the present invention.

  The thickness of the IC chip is preferably 0.1 mm or less. This is advantageous for reducing the thickness of a non-contact IC card using the IC package of the present invention.

  An IC module of the present invention includes the above-described IC package of the present invention and an antenna circuit connected to a terminal portion of the lead frame.

  In the above-described IC module of the present invention, the antenna circuit may be composed of a thin metal wire (antenna wire) disposed on one side of an insulating sheet. As a result, the positional accuracy of the antenna circuit is improved, so that a highly accurate antenna circuit can be formed.

  Or the said antenna circuit may be comprised with the electroconductive pattern formed in the single side | surface of an insulating base material. Thereby, the antenna circuit can be formed at low cost by a method such as etching or printing.

  Below, this invention is demonstrated in detail, showing suitable embodiment and an Example. However, it goes without saying that the present invention is not limited to the following embodiments and examples. For convenience of explanation, the drawings referred to in the following description show only the main members necessary for explaining the present invention in a simplified manner among the members constituting the embodiment of the present invention. Therefore, the present invention can include any member not shown in the following drawings. Further, in the following drawings, the actual dimensions of members and the dimensional ratios of the members are not faithfully represented.

(Structure of IC package)
FIG. 1A is a cross-sectional view of an IC package 1 according to an embodiment of the present invention, and FIG. 1B is a bottom view of the IC package 1. In this IC package 1, an IC chip 10 is mounted on a die pad portion 11 a of a lead frame 11 via a die bond agent 12. The terminal (I / O pad) 10 a of the IC chip 10 faces the side opposite to the lead frame 11 (upper side). The terminal 10 a of the IC chip 10 is electrically connected to the terminal portion 11 b of the lead frame 11 through the bonding wire 13. A pair of terminal portions 11b are arranged on both sides of the die pad portion 11a. The IC chip 10 and the bonding wire 13 are sealed with a sealing resin 14 so that they are not exposed to the outside. The lower surface of the lead frame 11 is exposed to the lower surface of the IC package 1 without being sealed with the sealing resin 14. A reinforcing layer 15 is provided on the surface (upper surface) opposite to the lead frame 11 of the sealing resin 14 via an adhesive layer 16. For convenience of the following description, the upper side of FIG. 1A is referred to as the “upper” side of the IC package 1, and the lower side of FIG. 1A is referred to as the “lower” side of the IC package 1. The vertical dimension in FIG. 1A is referred to as “thickness”.

  There is no restriction | limiting in particular in the IC chip 10, For example, the well-known IC chip used for an IC card etc. can be used. The IC chip 10 can be manufactured by forming a circuit on one side of a wafer such as silicon and separating it into individual pieces by dicing. A terminal 10a for electrical connection is provided on the circuit forming surface. The thickness of the IC chip 10 may be adjusted by grinding (back grinding) the surface opposite to the circuit formation surface. When producing an IC card, the thickness of the IC chip 10 is preferably 0.05 mm or more, more preferably 0.10 mm or less, and further preferably 0.07 mm or less. If the IC chip 10 is thinner than this numerical range, the mechanical strength of the IC chip 10 is lowered, and the IC chip 10 is easily broken by a slight impact force. If the IC chip 10 is thicker than this numerical range, the IC package 1 becomes thick and it becomes difficult to produce an IC card having a desired thickness.

  As the lead frame 11, any lead frame on which the IC chip 10 can be mounted can be used. The lead frame 11 shown in FIG. 1 is composed of three parts, a die pad part 11a on which the IC chip 10 is mounted, and a terminal part 11b to which the bonding wires 13 are connected on both sides of the die pad part 11a. The configuration is not limited to this. The lead frame 11 is preferably hard in order to reduce the destruction of the IC chip 10 due to the impact force applied from the reinforcing layer 15 side. Specifically, the lead frame 11 has a Vickers hardness of 135 or more. Is preferred. The material of the lead frame 11 is not particularly limited, but is preferably a conductive metal material, specifically, Cu—Fe, Cu—Ni—Si, Cu—Cr—Sn—Zn, Cu—Be—Ni—. Cu-based materials such as Co-Fe, Cu-Be-Ni, Cu-Be-Ni-Co-Al, Fe-based materials such as Ni-Fe, and stainless steel systems such as SUS301, SUS304, SUS316, SUS420, SUS430, and SUS631 Carbon steel materials such as materials and SK materials can be used. In the case of producing an IC card, the thickness of the lead frame 11 is preferably 0.1 mm or more, more preferably 0.125 mm or more, and preferably 0.2 mm or less, more preferably 0.15 mm or less. . If the lead frame 11 is thinner than this numerical range, the mechanical strength of the lead frame 11 is lowered, so that the handling of the lead frame 11 is lowered and the IC package 1 is difficult to manufacture. Further, there is a high possibility that the IC chip 10 is destroyed when an impact force is applied from the outside. If the lead frame 11 is thicker than this numerical range, the IC package 1 becomes thick and it becomes difficult to produce an IC card with a desired thickness.

  The die bond agent 12 is for fixing the IC chip 10 to the lead frame 11. The die bond agent 12 absorbs the impact force and the deformation of the lead frame 11 caused thereby, or suppresses the deformation of the lead frame 11 when the impact force is applied, thereby destroying the IC chip 10. Is prevented. For this reason, it is preferable that the die-bonding agent 12 has shock absorption (or flexibility) or high rigidity (robustness). Specifically, it is preferable that the hardness (JIS A or Shore A) has a flexibility of 55 or less, or a high rigidity (stiffness) whose elastic modulus is 1 GPa or more. The material of the die bond agent 12 is not particularly limited, but for example, a thermosetting epoxy resin or a thermosetting silicone resin can be used as the material having the flexibility after curing. Moreover, as a material having the above high rigidity after curing, for example, a conductive Ag paste resin, an anisotropic conductive adhesive, or an epoxy resin can be used. The anisotropic conductive adhesive may be either a paste type (ACP) or a film type (ACF) based on a thermosetting epoxy resin and containing metal particles such as Ni. The epoxy resin may be either a paste type (NCP) or a film type (NCF) that does not include metal particles. When producing an IC card, the thickness of the die bond agent 12 is preferably 0.01 mm or more, and preferably 0.03 mm or less. If the die bond agent 12 is thinner than this numerical range, the impact absorbability or rigidity of the die bond agent 12 is lowered, so that there is a high possibility that the IC chip 10 is broken by the impact force applied to the IC package 1. If the die bond agent 12 is thicker than this numerical range, the IC package 1 becomes thick and it becomes difficult to produce an IC card having a desired thickness.

  The bonding wire 13 electrically connects the terminal 10a of the IC chip 10 and the terminal portion of the lead frame 11 by a wire bonding method. As the bonding wire 13, any conductive wire used for wire bonding can be used. The material may be gold, copper, aluminum or the like, and the diameter is preferably 10 μm or more and 500 μm or less.

  The sealing resin 14 seals the IC chip 10 so as not to be exposed to outside air or water (humidity), and improves the impact resistance of the IC chip 10 by covering the IC chip 10. Further, by being integrated with the IC chip 10 and the lead frame 11, the mountability of the IC package 1 is improved. Although there is no restriction | limiting in particular as the sealing resin 14, Thermosetting resins, such as an epoxy type, a silicon type, and a phenol type, can be used. The thickness of the sealing resin 14 from the upper surface of the IC chip 10 to the upper surface of the sealing resin 14 is 0.10 mm or more so that the bonding wire 13 is completely sealed with the sealing resin 14. Is preferred.

  The reinforcing layer 15 is provided on the side opposite to the lead frame 11 of the sealing resin 14, thereby providing mechanical strength between the lower surface side (lead frame 11 side) and the upper surface side (reinforcing layer 11 side) of the IC package 1. Reduce non-uniformity. This prevents the IC package 1 from being bent and deformed by the impact force applied to the surface on the lead frame 11 side, thereby destroying (breaking) the sealing resin 14 and the IC chip 10. Therefore, it is preferable that the reinforcing layer 15 has a high hardness with a Vickers hardness of 200 or more and / or a high rigidity (stiffness) with an elastic modulus of 5 GPa or more. There is no restriction | limiting in particular in the material of the reinforcement layer 15, For example, a metal material and a resin material can be used. As the metal material, stainless steel materials such as SUS301, SUS304, SUS316, SUS420, SUS430, and SUS631, carbon steel materials such as SK material, and the like can be used, and polyimide and the like can be used as the resin material. When producing an IC card, the reinforcing layer 15 is preferably in the form of a foil or a sheet (or a film), and the thickness is preferably 0.01 mm or more and 0.05 mm or less. It is preferable. If the reinforcing layer 15 is thinner than this numerical range, there is a high possibility that the IC chip 10 and the sealing resin 14 are destroyed by the impact force applied to the surface on the lead frame 11 side. If the reinforcing layer 15 is thicker than this numerical range, the IC package 1 becomes thick and it becomes difficult to produce an IC card having a desired thickness.

  The adhesive layer 16 firmly fixes the reinforcing layer 15 to the upper surface of the sealing resin 14. Further, the adhesive layer 16 is formed so that when the impact force is applied to the surface on the lead frame 11 side, the IC package 1 is not bent and deformed so that the surface on the lead frame 11 side becomes a concave curved surface. It is desired to prevent deformation (for example, shear deformation, shear deformation, elongation deformation, etc.) or to prevent the reinforcing layer 15 from being displaced with respect to the sealing resin 14. Therefore, the adhesive layer 16 has a high rigidity (stiffness) with an elastic modulus of 0.8 GPa or more and / or a hardness (JIS D or Shore D) of 80 or more. It is preferable. The adhesive for forming the adhesive layer 16 may be in the form of a paste or a sheet. Although there is no restriction | limiting in particular as the adhesive bond layer 16, For example, a thermosetting epoxy resin, a filler containing thermosetting epoxy resin, a thermoadhesive sheet etc. can be used. When producing an IC card, the thickness of the adhesive layer 16 is preferably 0.005 mm or more, and preferably 0.03 mm or less. If the adhesive layer 16 is thinner than this numerical range, the adhesive layer 16 cannot exhibit the desired adhesive strength, or the mechanical strength of the adhesive layer 16 is reduced. The possibility that the sealing resin 14 is broken increases. If the adhesive layer 16 is thicker than this numerical range, the IC package 1 becomes thick and it becomes difficult to produce an IC card having a desired thickness.

  In the IC package 1 described above, the IC chip 10 is mounted on the lead frame 11 with the terminal 10a facing away from the lead frame 11, but the so-called flip is mounted with the terminal 10a facing the lead frame 11 side. It may be mounted on a chip. In this case, the bonding wire 13 is unnecessary, and the IC package 1 can be further reduced in thickness.

(IC package manufacturing method)
A method for manufacturing the IC package 1 shown in FIGS. 1A and 1B will be described. However, the following manufacturing method is merely an example, and the IC package 1 of the present invention can be manufactured by a method other than the following method.

  First, as shown in FIG. 2A, a sealed package 24 in which the IC chip 10 is sealed with a sealing resin is manufactured on the lead frame 21. In FIG. 2A, in order to simplify the drawing, the illustration of the IC chip and the like in the sealed package 24 is omitted, and the lead frame 21 that is actually divided into the die pad portion 11a and the terminal portion 11b. Is shown as a continuous plate. In FIG. 2A, the three sealed packages 24 are formed on the common lead frame 21, but the number of the sealed packages 24 formed on the lead frame 21 is not limited to this. It may be less. A plurality of sealed packages 24 may be formed in a direction perpendicular to the paper surface of FIG. 2A.

  Although the method for forming the sealed package 24 on the lead frame 21 is arbitrary, for example, an SLP (Small sized Lead frame Package) method can be used. A method for forming the sealed package 24 by the SLP method is roughly as follows.

  First, a thin metal plate to be the lead frame 21 is prepared. A die pad portion on which an IC chip is mounted and a terminal portion to which a bonding wire is connected are fabricated on this metal thin plate by an etching method, and the lead frame 21 is obtained. For example, a set including a die pad portion and a plurality of terminal portions can be formed so as to be arranged in a matrix on a thin metal plate.

  Next, an IC chip is mounted on each die pad portion of the lead frame 21 via a die bond agent. Thereafter, if necessary, the die bonding agent is cured by heat curing.

  Next, the terminals of the IC chip and the terminal portions of the lead frame 21 are electrically connected with bonding wires.

  Next, a protective sheet for preventing the sealing resin from adhering is attached to the surface (lower surface) opposite to the surface on which the IC chip of the lead frame 21 is mounted. The protective sheet need not be attached after electrical connection using a bonding wire, and can be performed at any stage after the lead frame 21 is manufactured.

  A mold die is placed on the surface (upper side surface) of the lead frame 21 on which the IC chip is mounted, and a sealing resin is injected into the space between the lead frame 21 and the mold die. As the mold, a standardized general-purpose mold may be used instead of a specially prepared special mold.

  Next, the sealing resin is cured by heat curing. The IC chip is sealed with a sealing resin.

  Thus, a plurality of sealed packages 24 can be formed on the lead frame 21 as shown in FIG. 2A.

  Thereafter, as shown in FIG. 3A, an adhesive paste 26 for forming the adhesive layer 16 (see FIG. 1A) is applied to the upper surface of each sealed package 24 formed in FIG. 2A. A method for applying the adhesive paste 26 is arbitrary, and for example, a printing method such as screen printing, offset printing, gravure printing, tampo printing, and ink jet printing, a method using a dispenser, a coating method such as spray coating, spin coating, or the like is used. be able to. An arbitrary method can be selected in consideration of the type of the adhesive paste 26, the size of the lead frame 21, and the like.

  Next, as shown in FIG. 3B, a reinforcing sheet 25 to be the reinforcing layer 15 is laminated on the adhesive pace 26. In FIG. 3B, one continuous reinforcing sheet 25 is stacked on the plurality of sealed packages 24, but the reinforcing sheet 25 may be divided for each sealed package 24. In order to remove air in the adhesive paste 26 between the sealing package 24 and the reinforcing sheet 25, the laminate from the lead frame 21 to the reinforcing sheet 25 is put into a vacuum chamber and deaerated under reduced pressure or under vacuum. To do. In addition to or instead of this, the laminate may be passed between two parallel rolls such as a laminator to flatten and thin the adhesive paste 26 together with deaeration.

  Next, as shown in FIG. 3C, the above laminate is sandwiched vertically between two metal plates 27a and 27b that can be regarded as substantially rigid bodies. A vertical compression force is applied to the laminate through the metal plates 27 a and 27 b using the bolts 28. Although the compressive force varies depending on various conditions, it is generally preferably 1 MPa or more, and preferably 50 Mpa or less. An elastic sheet 29 having rubber elasticity made of silicon rubber or the like is attached to the surface of the upper metal plate 27a on the reinforcing sheet 25 side. The elastic sheet 29 absorbs variations in the height of the upper surface of the sealed package 24.

  Next, the laminate sandwiched between the metal plates 27a and 27b is heated to a predetermined temperature, and the adhesive paste 26 is cured.

  Thereafter, the metal plates 27a and 27b are removed, the laminate is diced and divided into individual pieces, and the IC package 1 shown in FIGS. 1A and 1B is obtained.

  3A to 3C, the adhesive layer 16 is formed using the adhesive paste 26. The adhesive layer 16 can also be formed using a sheet-like adhesive sheet instead of the adhesive paste 26. A method for manufacturing the IC package 1 using the adhesive sheet will be described below.

  First, in the same manner as described above, a plurality of sealed packages 24 are produced on the lead frame 21 as shown in FIG. 2A.

  Next, as shown in FIG. 4A, the adhesive sheet 36 provided on the release sheet (not shown) or the like is transferred to the reinforcing sheet 25 that becomes the reinforcing layer 15, and the adhesive sheet 36 and the reinforcing sheet 25 are transferred. A laminated composite sheet 37 is produced.

  Next, as shown in FIG. 4B, the composite sheet 37 is laminated on the upper surface of the sealing package 24 with the adhesive sheet 36 facing the sealing package 24. In FIG. 4A and FIG. 4B, one continuous composite sheet 37 is stacked on the plurality of sealed packages 24, but the composite sheet 37 may be divided for each sealed package 24. In order to remove the air between the sealing package 24 and the adhesive sheet 36 and the air between the adhesive sheet 36 and the reinforcing sheet 25, the lead frame 21 is removed in the same manner as described with reference to FIG. 3B. The laminate up to the reinforcing sheet 25 is put into a vacuum chamber and deaerated under reduced pressure or under vacuum. In addition to or instead of this, the laminate may be passed between two parallel rolls such as a laminator to flatten and thin the adhesive sheet 36 along with deaeration.

  Next, as shown in FIG. 4C, the above laminate is sandwiched vertically between two metal plates 27a and 27b that can be regarded as substantially rigid bodies. A vertical compression force is applied to the laminate through the metal plates 27 a and 27 b using the bolts 28. Although the compressive force varies depending on various conditions, it is generally preferably 1 MPa or more, and preferably 50 Mpa or less. An elastic sheet 29 having rubber elasticity such as silicon rubber is attached to the surface of the upper metal plate 27a on the reinforcing sheet 25 side. The elastic sheet 29 absorbs variations in the height of the upper surface of the sealed package 24.

  Next, the laminate sandwiched between the metal plates 27a and 27b is heated to a predetermined temperature, and the adhesive sheet 36 is cured.

  Thereafter, the metal plates 27a and 27b are removed, the laminate is diced and divided into individual pieces, and the IC package 1 shown in FIGS. 1A and 1B is obtained.

  In the above manufacturing method, the adhesive sheet 36 may be transferred onto the sealing package 24 instead of being transferred onto the reinforcing sheet 25 as shown in FIGS. 4A and 4B. In this case, the reinforcing sheet 25 is laminated on the adhesive sheet 36.

  In FIG. 2A, each of a plurality of IC chips mounted on the lead frame 21 is separately sealed with a sealing resin to form a plurality of sealed packages 24, but the present invention is not limited to this. As shown in FIG. 2B, a plurality of IC chips 10 mounted on the lead frame 21 may be collectively sealed with a continuous sealing resin to form one sealed package 24 '. This method is advantageous in simplifying the configuration of the mold for forming the sealed package 24 'and improving the efficiency of forming the sealed package 24'. Further, when the sealed package 24 ′ is formed, the adhesive layer 16 and the reinforcing layer 15 may be formed on the sealed package 24 ′, so that these forming operations can be performed efficiently. .

  As described above, in the manufacture of the IC package 1 according to the present invention, the process (see FIGS. 2A and 2B) until the sealed packages 24 and 24 ′ are formed on the lead frame 21 uses a general-purpose SLP method. Can be done. Thereafter, the IC package 1 of the present invention can be obtained simply by providing the reinforcing sheet 25 on the sealed packages 24, 24 'via the adhesive paste 26 or the adhesive sheet 36. Therefore, the IC package 1 of the present invention does not require a complicated and expensive manufacturing facility (for example, a dedicated mold) and can be easily manufactured with a widely used facility. Therefore, it is inexpensive and excellent in mass productivity.

(IC module)
An IC module for a non-contact IC card using the IC package 1 of the present invention will be described.

  FIG. 5A is a cross-sectional view of an IC module 2a according to an embodiment of the present invention. The IC package 1 is fitted in a through hole 41 formed in the insulating sheet 40 having substantially the same thickness as the IC package 1. An antenna wire 45 constituting an antenna circuit is electrically connected to the lower surface of the terminal portion 11 b of the lead frame 11 of the IC package 1.

  The insulating sheet 40 has a substantially rectangular shape that is substantially the same size as the IC card. The material of the insulating sheet 40 is not particularly limited, and for example, an insulating resin made of polyester resin (for example, PET-G) or vinyl chloride can be used. The IC package 1 is fixed to the insulating sheet 40 by a method such as application of a pressure-sensitive adhesive or an adhesive or heat welding.

  The antenna wire 45 is made of a conductive thin metal wire such as copper, gold, or aluminum. Although illustration is omitted, the antenna wire 45 is formed and fixed to the lower surface of the insulating sheet 40 in a substantially rectangular coil shape along the outer peripheral edge of the insulating sheet 40. Both ends of one continuous antenna wire 45 are connected to the two terminal portions 11b of the lead frame 11, respectively. A method for connecting the antenna wire 45 and the terminal portion 11b is not particularly limited, and for example, a method such as ultrasonic welding or thermocompression bonding can be used.

  FIG. 5B is a cross-sectional view of an IC module 2b according to another embodiment of the present invention. An antenna pattern 55 constituting an antenna circuit is formed on one surface of the insulating base material 50. The IC package 1 is mounted on the antenna pattern 55 via an anisotropic conductive adhesive 56.

  The insulating base material 50 has a substantially rectangular shape that is substantially the same size as the IC card. The material of the insulating base 50 is not particularly limited, but an insulating resin made of, for example, a polyester resin (for example, PET) or vinyl chloride can be used.

  The antenna pattern 55 is a conductive pattern formed in a predetermined pattern (not shown) on the upper surface of the insulating substrate 50. The formation method is not particularly limited, and any method such as a method of etching a conductive metal such as aluminum or copper or a method of printing a conductive resin can be adopted.

  The IC package 1 is mounted on the insulating substrate 50 via the anisotropic conductive adhesive 56 so that the terminal portion 11 b of the lead frame 11 is disposed above the antenna pattern 55. Thereby, the antenna pattern 55 and the terminal part of the lead frame 11 can be electrically connected via the anisotropic conductive adhesive 56.

  In the IC package 1 of the present invention, since the terminal portion 11b of the lead frame 11 is exposed on the lower surface, the antenna wire 45 of the IC module 2a as shown in FIG. 5A or the antenna of the IC module 2b as shown in FIG. 5B. It can be easily connected to the pattern 55. In particular, since the terminal portion 11b does not have a bump, when the IC package 1 is applied to the IC module 2a of FIG. 5A, the connectivity between the terminal portion 11b and the antenna wire 45 and the thickness of the IC module 2a are reduced. It is advantageous.

(Non-contact IC card)
FIG. 6 is a cross-sectional view showing a schematic configuration of a non-contact IC card 3 using the IC module 2a shown in FIG. 5A. In FIG. 6, in order to simplify the drawing, the internal structure of the IC package 1 is omitted. A decorative overlay sheet 47 is laminated on both surfaces of the IC module 2a. As the overlay sheet 47, an insulating resin sheet such as polyester can be used. The overlay sheet 47 may be composed of a single layer or a composite sheet in which a plurality of layers are laminated. The overlay sheet 47 is printed as necessary. Printing can be performed on the outer surface of the overlay sheet 47. When the overlay sheet 47 is a composite sheet, printing may be performed on an arbitrary layer among the plurality of layers.

  In general, the thickness T3 of the IC card 3 is preferably 0.6 mm or more, 0.8 mm or less, and more preferably 0.7 mm or less. Considering the thickness of the overlay sheet 47, the thickness T (see FIG. 1A) of the IC package 1 is desirably 0.4 mm or less. In the IC package 1 of the present invention, the reinforcing layer 15 is provided only on the side opposite to the lead frame 11 and is a sheet-like or foil-like thin layer, so that the thickness T is 0.4 mm or less. A thin IC package 1 can be easily realized.

  The thickness of the insulating sheet 40 and the overlay sheet 47 is set so that the thickness T3 of the IC card 3 falls within the above numerical range. When the thickness T of the IC package 1 cannot be reduced, a portion of the IC package 1 swells on the outer surface of the overlay sheet 47 due to a thickness difference between the IC package 1 and the insulating sheet 40. . In the present invention, since the IC package 1 can be made thin, the thickness of the IC card 3 in the IC package 1 portion is substantially the same as the thickness of the IC card 3 in the insulating sheet 40 portion, IC card 3 satisfying the thickness T3 range can be realized. Therefore, the portion of the IC package 1 does not rise on the outer surface of the overlay sheet 47. For this reason, the IC card 3 of the present invention is excellent in appearance quality and printability on the overlay sheet 47 is good.

  Further, since the IC package 1 is thin, the thickness of the overlay sheet 47 can be sufficiently secured. For this reason, the room for selection of the configuration of the overlay sheet 47 is widened.

  Furthermore, since the IC package 3 is excellent in impact resistance, even if an impact force is applied to the outer surface of either the front or back overlay sheet 47, the possibility that the built-in IC chip 1 is destroyed is low. Therefore, the IC card 3 has excellent impact resistance and high reliability.

  The IC package 1 of the present invention can be used not only for a non-contact IC card but also for a contact IC card provided with a connection terminal for a reader / writer.

  Although FIG. 6 shows an example using the IC module 2a shown in FIG. 5A as a non-contact IC card, the non-contact IC card of the present invention is not limited to this. For example, the non-contact IC card of the present invention can be configured using the IC module 2b shown in FIG. 5B. In this case, in a region where the IC package 1 does not exist on the upper surface of the insulating substrate 50, a planarizing layer having a thickness so as to form substantially the same plane as the upper surface of the IC package 1 can be provided.

  The IC package 1 according to the example corresponding to the present invention shown in FIGS. 1A and 1B was manufactured by changing the manufacturing conditions in various ways. When viewed from above, the IC package 1 has a substantially rectangular shape, and its major axis direction dimension L1 is 6 mm and its minor axis direction dimension L2 is 3 mm (see FIG. 1B). The thickness T of the IC package 1 was 0.4 mm (see FIG. 1A). Using the IC package 1, an IC module 2b shown in FIG. 5A was produced.

  In order to confirm the effect of the IC package 1 according to the present invention, an IC package 9 according to a comparative example as shown in FIG. 7 was produced. This IC package 9 had the same structure as the IC chip 1 of the present invention except that it did not have the adhesive layer 16 and the reinforcing layer 15. In FIG. 7, the same members as those of the IC package 1 of FIG. 1A are denoted by the same reference numerals, and detailed description thereof will be omitted. The thickness T9 of the IC package 9 was 0.37 mm (see FIG. 7). Using the IC package 9 of the comparative example, an IC module was produced in the same manner as in the example.

  Details of each member constituting the IC chip 1 of the example and the IC chip 9 of the comparative example are as follows.

  The shape of the IC chip 10 in plan view was a substantially square with a side of about 3 mm, and its thickness was 0.09 mm.

  As the lead frame 11, a Cu—Fe based metal material (C194A) was used. The thickness was 0.125 mm and the Vickers hardness was 135.

  As the die bond agent 12, (1) thermosetting silicone resin (DA6501 manufactured by Toray Dow Corning Co., Ltd., hardness after curing (JIS A) is 31), (2) thermosetting epoxy resin (CV5151B manufactured by Panasonic Corporation), Hardness after curing (Shore A) was 55), and (3) conductive Ag paste resin (CM-1076DH manufactured by Sumitomo Bakelite Co., Ltd., elastic modulus after curing was 4.9 GPa) was used.

  As the sealing resin 14, EME-G770D manufactured by Sumitomo Bakelite Co., Ltd. was used.

  As the reinforcing sheet 25 to be the reinforcing layer 15, (1) 0.01 mm thick metal foil made of stainless steel (SUS304) (Vickers hardness is 370), (2) 0.02 mm thick made of stainless steel (SUS304) Three types of metal foil (Vickers hardness: 370) and (3) PI sheet made of polyimide and having a thickness of 0.025 mm (Kapton 100EN manufactured by Toray DuPont Co., Ltd., elastic modulus: 5.3 GPa) were used.

  The following seven types were used as the adhesive paste 26 or the adhesive sheet 36 to be the adhesive layer 16.

  (1) Epoxy resin (Konishi Co., Ltd. Quick 30, hardness after curing (Shore D) is 80). The heat curing condition was 24 hours at room temperature while applying a compressive force of 15 MPa.

  (2) Thermosetting epoxy resin A (2212 manufactured by ThreeBond Co., Ltd., hardness after curing (JIS D) is 92). The heat curing condition was 20 minutes at 120 ° C. while applying a compressive force of 15 MPa.

  (3) Thermosetting epoxy resin B (TNP0400 manufactured by Kyocera Chemical Co., Ltd., the elastic modulus after curing was 3.9 GPa. The heat curing condition was 1 minute at 150 ° C. while applying a compressive force of 15 MPa.

  (4) Filler thermosetting epoxy resin (TAP0402E manufactured by Kyocera Chemical Co., Ltd., elastic modulus after curing is 3.9 GPa). The heat curing condition was 1 minute at 150 ° C. while applying a compressive force of 15 MPa.

  (5) Thermal adhesive sheet A (Sagawa, Inc., Yodogawa Paper Co., Ltd., thickness 0.02 mm, elastic modulus after curing is 0.8 GPa). The heat curing conditions were 60 minutes at 170 ° C. while applying a compressive force of 1 MPa.

  (6) Thermal adhesive sheet B (KBN Giken Chemical Co., Ltd. SBN13, thickness 0.013 mm). The heat curing conditions were 60 minutes at 170 ° C. while applying a compressive force of 1 MPa.

  (7) Thermal adhesive sheet C (LT6003W manufactured by DIC Corporation, thickness 0.03 mm). The heat curing conditions were 60 minutes at 170 ° C. while applying a compressive force of 1 MPa.

(Impact test)
A plurality of high-quality papers were laminated on a metal hard surface plate so as to have a thickness of 1.5 mm. An IC module, which is a sample to be tested, was placed on high quality paper. Aiming at the center position of the IC chip 10 in the IC package, an impact force was applied from above to a minute region of the IC package. After the impact force was applied, it was determined whether or not communication could be performed between the IC module and the reader / writer. The case where communication was possible was judged as “◯” (good), and the case where communication was not possible was judged as “x” (bad). The energy of impact force was changed to 6 types of 5.9 mJ, 7.8 mJ, 9.8 mJ, 11.8 mJ, 13.7 mJ, and 19.6 mJ.

(Comparative Examples 1-3)
IC modules according to Comparative Examples 1 to 3 using the above three types as the die bond agent 12 were produced. Six samples were prepared for each of Comparative Examples 1 to 3. Of the six samples, three are subjected to an impact test in which an impact is applied to the lower surface of the IC package 9 (surface on the lead frame 11 side), and the remaining three are subjected to the upper surface of the IC package 9 (on the sealing resin 14 side). An impact test was performed in which an impact was applied to the surface. The impact energy was increased step by step, and each time an impact force was applied, it was determined whether communication between the IC module and the reader / writer was possible. The test was stopped when communication with the reader / writer became impossible (when “x” (defect) was judged).

  The test results are summarized in Table 1.

  From Table 1, when an impact force is applied to the upper surface (the surface on the sealing resin 14 side), the impact test is performed even for an impact force of 19.6 mJ at which the impact energy is maximum regardless of the composition of the die bond agent 12. The result was good. However, when an impact force is applied to the lower surface (the surface on the lead frame 11 side), the impact test result is poor for most samples when the impact energy is 7.8 mJ or more. Accordingly, when an impact force is applied to the lower surface, the upper limit value of the impact energy for preventing the IC chip 10 of the IC package 9 from being destroyed is determined to be 5.9 mJ in consideration of a safety margin.

  A sample IC package 9 determined to be “x” (defective) in the impact test was cut in the thickness direction, and the cut surface was observed with a microscope. As a result, as shown in FIG. 8, cracks 60 and 64 were formed in the IC chip 10 and the sealing resin 14 at positions corresponding to positions where the impact force F was applied. This is because when the impact force F is applied, the IC package 9 is bent and deformed so that the surface on the lead frame 11 side becomes a concave curved surface, whereby the sealing resin 14 on the side opposite to the lead frame 11 is stretched and sealed. It is considered that a crack 60 is generated in the stop resin 14, and the amount of bending deformation of the IC package 9 is further increased by the crack 64, so that the crack 60 is generated in the IC chip 10.

  On the other hand, when an impact force is applied to the upper surface (the surface on the sealing resin 14 side), the lead frame 11 on the side opposite to the side to which the impact force is applied is stretched and deformed as compared with the sealing resin 14. It is considered that the IC chip 10 was not cracked because it was not easily destroyed and the die bonding agent 12 absorbed the elongation deformation and bending deformation of the lead frame 11.

(Examples 1 to 15)
The above three types are used as the die bond agent 12, the above three types as the reinforcing sheet 25 that becomes the reinforcing layer 15, and the above seven types as the adhesive paste 26 or the adhesive sheet 36 that becomes the adhesive layer 16. IC modules 2b according to Examples 1 to 15 were produced. Three samples were prepared for each of Examples 1-15. Three samples were subjected to an impact test in which an impact was applied to the lower surface of the IC package 1 (the surface on the lead frame 11 side). The impact energy was increased step by step, and each time an impact force was applied, it was determined whether communication between the IC module and the reader / writer was possible. The test was stopped when communication with the reader / writer became impossible (when “x” (defect) was judged).

  The test results are summarized in Tables 2 and 3.

  From Tables 2 and 3, the IC package 1 of the present invention has a structure in which an impact force is applied to the lower surface (the surface on the lead frame 11 side) regardless of the composition of the die bond agent 12, the reinforcing layer 15, and the adhesive layer 16. It was confirmed that it can withstand an impact force of impact energy of 9.8 mJ. Furthermore, if the composition of the die bond agent 12, the reinforcing layer 15, and the adhesive increase 16 is appropriately selected, the IC package 1 that can withstand the impact force of 19.6 mJ impact energy from the lower surface side (lead frame 11 side) is obtained. It was confirmed that it could be realized.

  Therefore, when the reinforcing layer 15 is provided on the upper surface of the sealing resin 14 via the adhesive layer 16, the impact on the lower surface (the surface on the lead frame 11 side) is twice or more as compared with the case where these layers are not provided. It has been found that an IC package in which the IC chip 10 is not broken even when an energy impact force is applied can be realized.

  This is because the reinforcing layer 15 that is difficult to stretch and deform is provided on the side opposite to the side to which the impact force is applied, and the adhesive layer 16 that is difficult to shear is formed between the reinforcing layer 15 and the sealing resin 14. By being provided, it is considered that the bending deformation of the IC package 1 at the time of impact is suppressed.

  In addition, when the impact test which applies an impact to the upper surface (surface on the side of the reinforcing layer 15) of the IC package 9 was performed, all the samples of Examples 1 to 15 had an impact force of 19.6 mJ at the maximum impact energy. The impact test results were also good. As in Comparative Examples 1 to 3, when an impact force is applied to the upper surface (surface on the reinforcing layer 15 side), the lead frame 11 on the side opposite to the side to which the impact force is applied is stretched and deformed. However, it is considered that the IC chip 10 is not cracked because it is less likely to be destroyed than the sealing resin 14 and the die bond agent 12 absorbs elongation deformation and bending deformation of the lead frame 11.

  The application field of the present invention is not particularly limited, but can be preferably used in the field of IC cards, particularly non-contact IC cards.

DESCRIPTION OF SYMBOLS 1 IC package 2a, 2b IC module 3 Non-contact IC card 10 IC chip 11 Lead frame 11a Die pad part 11b of lead frame Terminal part 12 of lead frame Die bond agent 13 Bonding wire 14 Sealing resin 15 Reinforcement layer 16 Adhesive layer 40 Insulation Sheet 45 antenna wire (fine metal wire)
50 Insulating substrate 55 Antenna pattern

Claims (13)

An IC package comprising a lead frame, an IC chip mounted on the lead frame, and a sealing resin for sealing the IC chip,
An IC package, wherein a reinforcing layer is provided on an opposite surface of the sealing resin from the lead frame with an adhesive layer interposed therebetween.   The IC package according to claim 1, wherein the reinforcing layer has a Vickers hardness of 200 or more or an elastic modulus of 5 GPa or more.   The IC package according to claim 1 or 2, wherein the reinforcing layer has a thickness of 0.05 mm or less.   The IC package according to any one of claims 1 to 3, wherein the adhesive layer has an elastic modulus of 0.8 GPa or more, or a hardness (JIS D or Shore D) of 80 or more.   The IC package according to claim 1, wherein the IC chip is fixed to the lead frame via a die bond agent.   The IC package according to claim 5, wherein the die bond agent has a hardness of 55 or less (JIS A or Shore A) or an elastic modulus of 1 GPa or more.   The IC package according to claim 1, wherein the lead frame has a Vickers hardness of 135 or more.   The IC package according to any one of claims 1 to 7, wherein the thickness is 0.4 mm or less.   The IC package according to claim 1, wherein the IC chip has a thickness of 0.1 mm or less.   An IC module comprising the IC package according to claim 1 and an antenna circuit connected to a terminal portion of the lead frame.   The IC module according to claim 10, wherein the antenna circuit is formed of a fine metal wire disposed on one side of an insulating sheet.   The IC module according to claim 10, wherein the antenna circuit is composed of a conductive pattern formed on one side of an insulating base material.   A non-contact IC card comprising the IC module according to claim 10.

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