JP2014178411A - Electro-optic device and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electro-optic device and electronic equipment, in which favorable transmission characteristics can be obtained even when a light-transmitting conductive film having a larger width dimension than that of a data line is disposed between the data line and a pixel electrode.SOLUTION: In an electro-optic device 100 as an embodiment, a light-transmitting conductive film 7a is disposed between a data line 6a and a pixel electrode 9a, and the conductive film has a larger width than that of the data line 6a so as to cover the data line 6a in a plan view. A constant potential is applied to the conductive film 7a. The thickness of the conductive film 7a is smaller than the film thickness of the pixel electrode 9a. Thereby, the conductive film 7a has a higher transmittance than the transmittance of the pixel electrode 9a in at least a wavelength region from 400 nm to 500 nm (a wavelength region of a blue color), a wavelength region from 500 nm to 600 nm (a wavelength region of a green color), and a wavelength region from 600 nm to 700 nm (a wavelength region of a red color).

Description

  The present invention relates to an electro-optical device having a data line, a pixel switching element, and a light-transmissive pixel electrode, and an electronic apparatus including the electro-optical device.

  In an electro-optical device such as a liquid crystal device, a pixel transistor, a data line, and a pixel electrode are provided on one side of an element substrate. When the pixel transistor is turned on during a selection period, the data transistor passes through the pixel transistor. The image signal is supplied to the pixel electrode. In the non-selection period, the pixel transistor is turned off, so that the pixel electrode holds the previously supplied image signal until the next selection period. In such a non-selection period, the potential of the data line and the potential of the pixel electrode are different. Therefore, if the parasitic capacitance between the pixel electrode and the data line is large, the pixel is affected by the potential of the data line. The potential of the electrode fluctuates and so-called vertical crosstalk occurs.

  Therefore, a configuration has been proposed in which a shield layer having a wider width than the data line is provided between the data line and the pixel electrode. It has also been proposed to use a light-transmitting conductive film as the shield layer (see Patent Documents 1, 2, and 3).

JP 63-97919 A JP-A-5-127195 Japanese Patent No. 4102925

  However, if a shield layer having a width larger than that of the data line is provided between the data line and the pixel electrode, the transmission characteristics deteriorate, for example, the transmittance in the region where the shield layer is provided is lowered.

  In view of the above problems, an object of the present invention is to obtain good transmission characteristics even when a light-transmitting conductive film having a wider width than the data line is provided between the data line and the pixel electrode. An electro-optical device that can be used, and an electronic apparatus including the electro-optical device.

  In order to solve the above problems, an electro-optical device according to the present invention includes a data line, a pixel switching element electrically connected to the data line, and a translucent electrode electrically connected to the switching element. A pixel electrode; and a light-transmitting conductive film that is formed wider than the data line so as to cover the data line in plan view between the data line and the pixel electrode and to which a constant potential is applied. The transmittance of the conductive film is higher than the transmittance of the pixel electrode in at least a wavelength range of 400 nm to 500 nm, a wavelength range of 500 nm to 600 nm, and a wavelength range of 600 nm to 700 nm.

  In the present invention, a light-transmitting conductive film wider than the data line is provided between the data line and the pixel electrode so as to cover the data line in plan view, and a constant potential is applied to the conductive film. . For this reason, since the parasitic capacitance between the data line and the pixel electrode can be reduced, the influence of the potential of the data line hardly affects the pixel electrode. Further, since the transmittance of the conductive film is higher than the transmittance of the pixel electrode in at least the wavelength range of 400 nm to 500 nm, the wavelength range of 500 nm to 600 nm, and the wavelength range of 600 nm to 700 nm, Even if a conductive film having a width larger than that of the data line is provided, loss of display light amount due to the conductive film can be suppressed. Therefore, good transmission characteristics can be obtained.

  In the present invention, a configuration in which the conductive film is thinner than the pixel electrode can be employed. According to such a configuration, the transmittance of the conductive film can be made higher than the transmittance of the pixel electrode, so that it is possible to suppress the loss of display light amount caused by the conductive film.

  In the present invention, a light-transmitting insulating layer is provided between the pixel electrode and the conductive film, the pixel electrode is an ITO film having a thickness of 140 nm ± 10%, and the conductive film has a thickness of Is an ITO film having a thickness of 140 nm ± 10%, and the insulating layer may be a silicon oxide film having a thickness of 175 nm ± 10%. According to such a configuration, the spectral characteristics of the transmitted light in the region where the pixel electrode, the insulating layer, and the conductive film overlap in plan view are 400 nm to 500 nm, 500 nm to 600 nm, and 600 nm to 700 nm. Has a peak in the region. For this reason, the transmittance | permeability of red light, green light, and blue light required for the display of a color image is high. Therefore, good transmission characteristics suitable for displaying color images can be obtained.

  In the present invention, a light-transmitting insulating layer is provided between the pixel electrode and the conductive film, the pixel electrode is an ITO film having a thickness of 140 nm ± 10%, and the conductive film has a thickness of Is preferably an ITO film of 140 nm ± 10%. According to such a configuration, the spectral characteristic of the transmitted light in the region where the conductive film, the insulating layer, and the pixel electrode overlap has a peak in the wavelength range of 530 nm to 590 nm. Therefore, the transmittance in the wavelength region where the sensitivity is high in human visibility characteristics is high. Therefore, good transmission characteristics suitable for displaying color images can be obtained.

In the present invention, a light-transmitting insulating layer is provided between the pixel electrode and the conductive film, the film thickness of the pixel electrode is d _1, and the refractive index of the pixel electrode with respect to light of wavelength λ is n _1. Where d ₂ is the thickness of the insulating layer overlapping the conductive film, n ₂ is the refractive index of the insulating layer with respect to light of wavelength λ, and d ₃ is the thickness of the conductive film. When the refractive index for light of wavelength λ is n ₃ ,
d ₁ , d ₂ , d ₃ , n ₁ , n ₂ and n ₃ are the following conditions (1), (2)
n ₁ × d ₁ + n ₂ × d ₂ = λ (1/4 + m / 2) (1)
n ₂ × d ₂ + n ₃ × d ₄ = λ (1/4 + n / 2) (2)
Where λ is the wavelength of the incident light
m and n are integers of 0 or more
n ₁ > n ₂
n ₃ > n ₂
n ₁ > (refractive index of the transparent film in contact with the pixel electrode on the side opposite to the conductive film)
n ₃ > (refractive index of the light-transmitting film contacting the conductive film on the side opposite to the pixel electrode)
A configuration satisfying the above can be adopted. According to such a configuration, when light passes through a region where the pixel electrode, the insulating layer, and the conductive film overlap in a plan view, the optical path length is set so that the phases of the light reflected at the interface cancel each other. The amount of light can be reduced. Therefore, good transmission characteristics such as a high amount of transmitted light can be obtained.

  In the present invention, the conductive film adopts a configuration in which the transmittance at a unit thickness is higher than that of the pixel electrode in at least a wavelength range of 400 nm to 500 nm, a wavelength range of 500 nm to 600 nm, and a wavelength range of 600 nm to 700 nm. May be. According to such a configuration, the transmittance of the conductive film can be made higher than the transmittance of the pixel electrode, so that it is possible to suppress the loss of display light amount caused by the conductive film.

  In the present invention, a counter electrode opposed to the pixel electrode, and an electro-optic layer disposed between the counter electrode and the pixel electrode, wherein the counter electrode and the conductive film have the same constant potential A configuration in which is applied can be employed.

  In the present invention, a first capacitor electrode layer provided between the conductive film and the data line and electrically connected to the pixel electrode, and between the first capacitor electrode layer and the data line A dielectric layer provided between the first capacitor electrode layer and the second capacitor electrode layer; and a second capacitor electrode layer provided at least partially overlapping the first capacitor electrode layer, to which a constant potential is applied. The conductive film may adopt a configuration in which a portion extending along the data line is wider than the first capacitor electrode layer and the second capacitor electrode layer. Good. According to such a configuration, the shield between the pixel electrode and the data line can be performed by the conductive film without forming the second capacitor electrode layer wide. Therefore, even if a light-shielding conductive film is used for the second capacitor electrode layer, the pixel aperture ratio does not decrease. Therefore, good transmission characteristics can be obtained.

  In the present invention, a capacitive electrode layer provided between the conductive film and the data line so as to at least partially overlap the conductive film in plan view and electrically connected to the pixel electrode, and the conductive film And a dielectric film disposed between the capacitor electrode layer and the capacitor electrode layer. According to such a configuration, the storage capacitor can be configured using the conductive film used for the shield.

  In the present invention, the pixel electrode has a microlens opposite to the conductive film, and a side surface of the conductive film is inclined obliquely toward a side where the microlens is located. Can be adopted. According to such a configuration, it is difficult for light to be incident on the side surface of the conductive film, so that the generation of stray light due to the light incident on the side surface of the conductive film can be suppressed.

  An electro-optical device according to another aspect of the invention includes a data line, a pixel switching element electrically connected to the data line, a translucent pixel electrode electrically connected to the switching element, A transparent conductive film that is formed wider than the data line so as to cover the data line in plan view between the data line and the pixel electrode, and to which a constant potential is applied, and A translucent insulating layer is provided between the electrode and the conductive film, the pixel electrode is an ITO film having a thickness of 140 nm ± 10%, and the conductive film has a thickness of 140 nm ± 10% It is an ITO film, and the insulating layer is a silicon oxide film having a film thickness of 175 nm ± 10%.

  In the present invention, a light-transmitting conductive film wider than the data line is provided between the data line and the pixel electrode so as to cover the data line in plan view, and a constant potential is applied to the conductive film. . For this reason, since the parasitic capacitance between the data line and the pixel electrode can be reduced, the influence of the potential of the data line hardly affects the pixel electrode. In addition, since the pixel electrode, the insulating film, and the conductive film are optimized in film thickness, the spectral characteristics of the transmitted light in the region where the pixel electrode, the insulating layer, and the conductive film overlap in plan view are in the wavelength range of 400 nm to 500 nm, 500 nm. To 600 nm and 600 nm to 700 nm. For this reason, the transmittance of red light, green light and blue light necessary for displaying a color image with high color reproducibility is high. Therefore, good transmission characteristics suitable for displaying color images can be obtained.

  An electro-optical device according to another aspect of the invention includes a data line, a pixel switching element electrically connected to the data line, a translucent pixel electrode electrically connected to the switching element, A transparent conductive film that is formed wider than the data line so as to cover the data line in plan view between the data line and the pixel electrode, and to which a constant potential is applied, and A translucent insulating layer is provided between the electrode and the conductive film, the pixel electrode is an ITO film having a thickness of 140 nm ± 10%, and the conductive film has a thickness of 140 nm ± 10% It is an ITO film.

  In the present invention, a light-transmitting conductive film wider than the data line is provided between the data line and the pixel electrode so as to cover the data line in plan view, and a constant potential is applied to the conductive film. . For this reason, since the parasitic capacitance between the data line and the pixel electrode can be reduced, the influence of the potential of the data line hardly affects the pixel electrode. In addition, since the pixel electrode is an ITO film having a thickness of 140 nm ± 10% and the conductive film is an ITO film having a thickness of 140 nm ± 10%, the conductive film, the insulating layer, and the pixel electrode overlap with each other. The spectral characteristics of the transmitted light at the peak have a peak in the wavelength range from 530 nm to 590 nm. Therefore, the transmittance in the wavelength region where the sensitivity is high in human visibility characteristics is high. Therefore, good transmission characteristics suitable for displaying color images can be obtained.

An electro-optical device according to still another aspect of the invention includes a data line, a pixel switching element electrically connected to the data line, and a translucent pixel electrode electrically connected to the switching element. A transparent conductive film that is formed wider than the data line so as to cover the data line in plan view between the data line and the pixel electrode, and to which a constant potential is applied, A translucent insulating layer is provided between the pixel electrode and the conductive film, the film thickness of the pixel electrode is d ₁ , the refractive index of the pixel electrode with respect to light of wavelength λ is n ₁ , and the insulating layer The thickness of the portion overlapping the conductive film is d ₂ , the refractive index of the insulating layer with respect to light with wavelength λ is n ₂ , the thickness of the conductive film is d _3, and the light with wavelength λ of the conductive film is When the refractive index for n is n ₃ ,
d ₁ , d ₂ , d ₃ , n ₁ , n ₂ and n ₃ are the following conditions (1), (2)
n ₁ × d ₁ + n ₂ × d ₂ = λ (1/4 + m / 2) (1)
n ₂ × d ₂ + n ₃ × d ₄ = λ (1/4 + n / 2) (2)
Where λ is the wavelength of the incident light
m and n are integers of 0 or more
n ₁ > n ₂
n ₃ > n ₂
n ₁ > (refractive index of the transparent film in contact with the pixel electrode on the side opposite to the conductive film)
n ₃ > (refractive index of the light-transmitting film contacting the conductive film on the side opposite to the pixel electrode)
It is characterized by satisfying.

  In the present invention, a light-transmitting conductive film wider than the data line is provided between the data line and the pixel electrode so as to cover the data line in plan view, and a constant potential is applied to the conductive film. . For this reason, since the parasitic capacitance between the data line and the pixel electrode can be reduced, the influence of the potential of the data line hardly affects the pixel electrode. In addition, when light passes through a region where the pixel electrode, insulating layer, and conductive film overlap in plan view, the optical path length is set so that the phases of the light reflected at the interface cancel each other, thus reducing the amount of reflected light. be able to. Therefore, good transmission characteristics such as a high amount of transmitted light can be obtained.

  The electro-optical device according to the present invention can be used in electronic devices such as a mobile phone, a mobile computer, and a projection display device. Among these electronic apparatuses, the projection display device includes a light source unit for supplying light to the electro-optical device and a projection optical system that projects light modulated by the electro-optical device.

FIG. 3 is an explanatory diagram of a liquid crystal panel of the electro-optical device according to the first embodiment of the invention. FIG. 3 is an explanatory diagram showing an electrical configuration of an element substrate of the electro-optical device according to Embodiment 1 of the invention. FIG. 3 is an explanatory diagram of a pixel of the electro-optical device according to the first embodiment of the invention. FIG. 3 is an explanatory diagram of a thin film and the like constituting a pixel switching element in the element substrate of the electro-optical device according to Embodiment 1 of the invention. FIG. 6 is an explanatory diagram of a thin film or the like constituting a storage capacitor in the element substrate of the electro-optical device according to the first embodiment of the invention. FIG. 3 is an explanatory diagram of pixel electrodes and the like formed on the element substrate of the electro-optical device according to Embodiment 1 of the invention. It is a graph which shows the result of having simulated the spectral characteristic of the transmitted light at the time of changing the film thickness of an electrically conductive film, an insulating layer, and a pixel electrode. It is a graph which shows the result of having simulated the spectral characteristic of the transmitted light at the time of changing the film thickness of an electrically conductive film, an insulating layer, and a pixel electrode. It is a graph which shows the result of having simulated the spectral characteristic of the transmitted light at the time of changing the film thickness of an electrically conductive film, an insulating layer, and a pixel electrode. It is a graph which shows the result of having simulated the spectral characteristic of the transmitted light at the time of changing the film thickness of an electrically conductive film, an insulating layer, and a pixel electrode. It is a graph which shows the result of having simulated the spectral characteristic of the transmitted light at the time of changing the film thickness of an electrically conductive film and a pixel electrode. It is a graph which shows the result of having simulated the spectral characteristic of the transmitted light at the time of changing the film thickness of an electrically conductive film and a pixel electrode. It is a graph which shows the result of having simulated the spectral characteristic of the transmitted light at the time of changing the film thickness of an electrically conductive film and a pixel electrode. It is a graph which shows the result of having simulated the spectral characteristic of the transmitted light at the time of changing the film thickness of an electrically conductive film and a pixel electrode. It is a graph which shows the result of having simulated the spectral characteristic of the transmitted light at the time of changing the film thickness of an electrically conductive film and a pixel electrode. It is a graph which shows the result of having simulated the spectral characteristic of the transmitted light at the time of changing the film thickness of an electrically conductive film and a pixel electrode. It is explanatory drawing which shows the side surface shape of the conductive layer formed in the electro-optical apparatus which concerns on the example of improvement of this invention. It is a schematic block diagram of the projection type display apparatus (electronic device) and optical unit to which this invention is applied.

  Embodiments of the present invention will be described below. In the drawings to be referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. In the drawings referred to in the following description, the number of wirings such as scanning lines, data lines, and signal lines is reduced.

[Embodiment 1]
FIG. 1 is an explanatory diagram of a liquid crystal panel of an electro-optical device according to Embodiment 1 of the present invention. FIG. 1A shows a planar configuration of the liquid crystal panel viewed from the side of the counter substrate together with each component. FIG. 1 (b) shows the HH ′ cross section.

  As shown in FIGS. 1A and 1B, in the liquid crystal panel 100p used in the electro-optical device 100 (liquid crystal device) of the present embodiment, the element substrate 10 (electro-optical device substrate) and the counter substrate 20 are predetermined. The sealing material 107 is attached in a frame shape so as to be along the outer edge of the counter substrate 20. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material 107a such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value. In the liquid crystal panel 100p, an electro-optical layer 50 (liquid crystal layer) is provided in a region surrounded by the sealing material 107 between the element substrate 10 and the counter substrate 20. The sealing material 107 is formed with a discontinuous portion used as the liquid crystal injection port 107c. The liquid crystal injection port 107c is sealed with a sealing material 107d after the liquid crystal material is injected.

  In the liquid crystal panel 100p having such a configuration, the element substrate 10 and the counter substrate 20 are both square, and the element substrate 10 includes two sides 10e and 10f (end portions) facing each other in the Y direction (second direction), and X Two sides 10g and 10h (end portions) that face each other in the direction (first direction) are provided. The display area 10a is provided as a square area at the approximate center of the liquid crystal panel 100p, and the sealing material 107 is also provided in a substantially square shape corresponding to the shape. The outer side of the display area 10a is a square frame-shaped outer peripheral area 10c.

  In the element substrate 10, in the outer peripheral region 10c, a data line driving circuit 101 and a plurality of terminals 102 are formed along a side 10e located on one side of the element substrate 10 in the Y-axis direction. A scanning line driving circuit 104 is formed along each of the sides 10g and 10h. A flexible wiring board (not shown) is connected to the terminal 102, and various potentials and various signals are input to the element substrate 10 from an external control circuit via the flexible wiring board.

  As will be described in detail later with reference to FIG. 3 and the like, on one side 10s and the other side 10t of the element substrate 10 on the side of the one surface 10s facing the counter substrate 20, the display region 10a has a pixel electrode 9a, Pixel switching elements 30 and the like described later with reference to FIG. 2 and the like are arranged in a matrix. Therefore, the display area 10a is configured as a pixel electrode arrangement area 10p in which the pixel electrodes 9a are arranged in a matrix. In the element substrate 10 having such a configuration, an alignment film 16 is formed on the electro-optic layer 50 side of the pixel electrode 9a.

  Of the outer peripheral area 10c outside the display area 10a on the one surface 10s side of the element substrate 10, a rectangular frame-shaped peripheral area 10b sandwiched between the display area 10a and the sealant 107 is provided simultaneously with the pixel electrode 9a. The formed dummy pixel electrode 9b is formed. In the dummy pixel electrode 9b, adjacent dummy pixel electrodes 9b are connected to each other by a narrow connecting portion (not shown). The dummy pixel electrode 9b is applied with the common potential Vcom, and prevents the disorder of the alignment of the liquid crystal molecules at the outer peripheral side end of the display region 10a.

  A common electrode 21 is formed on the side of the one surface 20 s facing the element substrate 10 out of the one surface 20 s and the other surface 20 t of the counter substrate 20. The common electrode 21 is formed across the plurality of pixels 100a as the entire surface of the counter substrate 20 or a plurality of strip electrodes. In this embodiment, the common electrode 21 is formed on the entire surface of the counter substrate 20.

  A light-shielding layer 29 is formed on the opposite surface 20 of the counter substrate 20 on the side opposite to the electro-optic layer 50 with respect to the common electrode 21, and an alignment film on the side of the electro-optic layer 50 with respect to the common electrode 21. 26 is formed. The light shielding layer 29 is formed as a frame portion 29 a extending along the outer peripheral edge of the display area 10 a, and the display area 10 a is defined by the inner peripheral edge of the light shielding layer 29. The light shielding layer 29 is also formed as a black matrix portion 29b that overlaps an inter-pixel region sandwiched between adjacent pixel electrodes 9a. The frame portion 29 a is formed at a position overlapping the dummy pixel electrode 9 b, and the outer peripheral edge of the frame portion 29 a is at a position with a gap between the inner peripheral edge of the sealing material 107. Therefore, the frame portion 29a and the sealing material 107 do not overlap.

  Further, on the side of one surface 20 s of the counter substrate 20, a microlens 27 that overlaps the pixel electrode 9 a in a plan view is formed on the side opposite to the electro-optical layer 50 with respect to the common electrode 21. The microlens 27 is formed by filling a translucent material 270 into a hemispherical recess formed on the one surface 20 s of the counter substrate 20. In the counter substrate 20, a protective layer (not shown) may be formed between the microlens 27 and the common electrode 21.

  In the liquid crystal panel 100p, inter-substrate conduction electrodes 25 are formed on the four corners on the one surface 20s side of the counter substrate 20 outside the sealing material 107, and on the one surface 10s side of the element substrate 10. The inter-substrate conduction electrodes 19 are formed at positions facing the four corners of the counter substrate 20 (inter-substrate conduction electrodes 25). In this embodiment, the inter-substrate conduction electrode 25 is composed of a part of the common electrode 21. A common potential Vcom is applied to the inter-substrate conduction electrode 19. An inter-substrate conducting material 19 a containing conductive particles is disposed between the inter-substrate conducting electrode 19 and the inter-substrate conducting electrode 25, and the common electrode 21 of the counter substrate 20 is the inter-substrate conducting electrode 19. The element substrate 10 is electrically connected through the inter-substrate conductive material 19a and the inter-substrate conductive electrode 25. Therefore, the common potential Vcom is applied to the common electrode 21 from the element substrate 10 side. The sealing material 107 is provided along the outer peripheral edge of the counter substrate 20 with substantially the same width dimension, but passes through the inside avoiding the inter-substrate conduction electrodes 19 and 25 in a region overlapping the corner portion of the counter substrate 20. It is provided as follows.

  In this embodiment, the electro-optical device 100 is a transmissive liquid crystal device, and the pixel electrode 9a and the common electrode 21 are formed of a light-transmitting conductive film such as an ITO (Indium Tin Oxide) film or an IZO (Indium Zinc Oxide) film. Has been. In such a transmissive liquid crystal device (electro-optical device 100), for example, light incident from the counter substrate 20 side is modulated while being emitted from the element substrate 10 side, and an image is displayed.

  The electro-optical device 100 can be used as a color display device of an electronic device such as a mobile computer or a mobile phone. In this case, a color filter (not shown) is formed on the counter substrate 20. The electro-optical device 100 can also be used as electronic paper. In the electro-optical device 100, a polarizing film, a retardation film, a polarizing plate, and the like are predetermined with respect to the liquid crystal panel 100p depending on the type of the electro-optical layer 50 to be used and the normally white mode / normally black mode. It is arranged in the direction. Furthermore, the electro-optical device 100 can be used as a light valve for RGB in a projection display device (liquid crystal projector) described later. In this case, each of the RGB electro-optical devices 100 receives light of each color separated through RGB color separation dichroic mirrors as projection light, so that no color filter is formed. .

(Electrical configuration of the element substrate 10)
FIG. 2 is an explanatory diagram showing an electrical configuration of the element substrate 10 of the electro-optical device 100 according to the first embodiment of the present invention. FIG. 2A is a plan view of the circuit and wiring of the element substrate 10. FIG. 2B shows an electrical configuration of the pixel 100a. In the following description, the same alphabet symbol is given to the signal name and signal wiring input to the element substrate 10 via the terminal 102 after the signal and the wiring L, respectively. For example, for the signal name “clock signal CLX”, the corresponding signal wiring is “clock signal line LCLX”. In the following description, the same alphabetical symbol is given to the signal name and the signal terminal input to the element substrate 10 via the terminal 102 after the signal and the terminal T, respectively. For example, the terminal 102 corresponding to the signal name “clock signal CLX” is “terminal TCLX”.

  As shown in FIGS. 2A and 2B, in the electro-optical device 100, a pixel electrode array region 10p in which a plurality of pixels 100a are arrayed in a matrix is provided in the central region of the element substrate 10. Of the pixel electrode array region 10p, the region surrounded by the inner edge of the frame portion 29a shown in FIG. 1B is the display region 10a. In the element substrate 10, a plurality of scanning lines 3a extending in the X direction and a plurality of data lines 6a extending in the Y direction are formed inside the pixel electrode array region 10p, and their intersections. A pixel 100a is configured at a position corresponding to. In each of the plurality of pixels 100a, a pixel switching element 30 (pixel transistor) made of a TFT or the like and a pixel electrode 9a are formed. The data line 6 a is electrically connected to the source of the pixel switching element 30, the scanning line 3 a is electrically connected to the gate of the pixel switching element 30, and the pixel electrode 9 a is electrically connected to the drain of the pixel switching element 30. Connected.

  In the element substrate 10, a scanning line driving circuit 104, a data line driving circuit 101, a sampling circuit 103, an inter-substrate conduction electrode 19, a terminal 102, and the like are configured in the outer peripheral region 10 c outside the pixel electrode arrangement region 10 p. A plurality of wirings 105 extend from the terminal 102 toward the scanning line driving circuit 104, the data line driving circuit 101, the sampling circuit 103, and the inter-substrate conduction electrode 19. The sampling circuit 103 is electrically connected to the plurality of data lines 6a, and the scanning line driving circuit 104 is electrically connected to the plurality of scanning lines 3a.

  In each pixel 100a, the pixel electrode 9a is opposed to the common electrode 21 formed on the counter substrate 20 described with reference to FIG. 1 via the electro-optic layer 50, and constitutes a liquid crystal capacitor 50a. Each pixel 100a is provided with a holding capacitor 55 in parallel with the liquid crystal capacitor 50a in order to prevent fluctuations in the image signal held in the liquid crystal capacitor 50a. In this embodiment, in order to form the storage capacitor 55, a capacitor line 8a extending across the plurality of pixels 100a is formed, and a common potential Vcom is applied to the capacitor line 8a.

  In FIG. 2B, the capacitor line 8a is shown as extending in parallel with the scanning line 3a. However, the capacitor line 8a extends in parallel with the data line 6a. Also good. In this embodiment, a configuration in which the capacitor line 8a extends in parallel with the data line 6a is employed.

  The terminals 102 provided along the side 10e of the element substrate 10 are a plurality of terminal groups that are broadly classified into four uses for common potential lines, scanning line driving circuits, image signals, and data line driving circuits. It is comprised by. Specifically, the terminal 102 includes a terminal TVcom for the common potential line LVcom, and includes a terminal TSSPY, a terminal TVSSY, a terminal TVDDY, a terminal TCLY, and a terminal TCLYINV for the scanning line driving circuit 104. The terminal 102 includes terminals TVID1 to TVID6 for the image signals VID1 to VID6. For the data line driving circuit 101, the terminal TVSSX, the terminal TSPX, the terminal TVDDX, the terminal TCLX, the terminal TCLXINV, the terminals TENB1 to TENB4, and the terminal TVSSX is provided.

  The data line driving circuit 101 includes a shift register circuit 101c, a waveform selection circuit 101b, and a buffer circuit 101a. In the data line driver circuit 101, the shift register circuit 101c uses the negative power supply VSSX and the positive power supply VDDX supplied from the external control circuit via the terminal 102 (terminals TVSSX, TVDDX) and the wiring 105 (wiring LVSSX, LVDDX) as power supplies. The transfer operation is started based on the start signal SPX supplied from the external control circuit via the terminal 102 (terminal TSPX) and the wiring 105 (wiring LSPX). The shift register circuit 101c sequentially transfers transfer signals at predetermined timing based on the clock signal CLX and the antiphase clock signal CLXINV supplied via the terminal 102 (terminals TCLX, TCLXINV) and the wiring 105 (wiring LCLX, LCLXINV). Output to the waveform selection circuit 101b. The waveform selection circuit 101b is also referred to as an “enable circuit”, and the pulse width of the transfer signal sequentially output from the shift register circuit 101c is set to the terminal 102 (terminals TENB1 to TENB4) and the wiring 105 (wiring LENB1 to LENB4) from the external control circuit. Each sampling period in the sampling circuit 103 to be described later is defined by limiting the pulse width of the enable signals ENB <b> 1 to ENB <b> 4 supplied via). More specifically, the waveform selection circuit 101b includes a NAND circuit and an inverter provided corresponding to each stage of the shift register circuit 101c, and the transfer signals sequentially output from the shift register circuit 101c are high. The waveform selection control on the time axis is performed so that the data line 6a is driven only when the level is set and the enable signal ENB1 to ENB4 is at the high level. The buffer circuit 101a buffers the transfer signal on which the waveform has been selected in this way, and then supplies it to the sampling circuit 103 via the selection signal line 109 as a sampling circuit drive signal.

  The sampling circuit 103 includes a plurality of switching elements 108 for sampling an image signal. In this embodiment, the switching element 108 is composed of a field effect transistor such as a TFT. The data line 6 a is electrically connected to the drain of the switching element 108. The wiring 105 (image signal lines LVID 1 to LVID 6) is connected to the source of the switching element 108 via the wiring 106, and the switching element 108. The selection signal line 109 connected to the data line driving circuit 101 is connected to the gate of the first and second gates. Then, the image signals VID1 to VID6 supplied to the wiring 105 (image signal lines LVID1 to LVID6) via the terminal 102 (terminals TVID1 to VID6) are selected from the data line driving circuit 101 through the selection signal line 109 through the selection signal (sampling circuit). Is supplied by the sampling circuit 103 and supplied to the data lines 6a as image signals S1, S2, S3,... Sn. In this embodiment, the image signals S1, S2, S3,... Sn are grouped with respect to a set of six data lines 6a corresponding to each of the image signals VID1 to VID6 that are serial-parallel expanded into six phases. Supplied every time. Note that the number of phase expansions of the image signal is not limited to six phases. For example, image signals expanded in a plurality of phases such as 9 phases, 12 phases, 24 phases, and 48 phases correspond to the number of expansions. Supplied to a set of data lines 6a whose number is one set.

  The scanning line driver circuit 104 includes a shift register circuit and a buffer circuit as components. The scanning line driving circuit 104 uses a negative power supply VSSY and a positive power supply VDDY supplied from the external control circuit via the terminal 102 (terminals TVSSY, TVDDY) and the wiring 105 (wirings LVSSY, LVDDY) as power supplies, and is also an external control circuit. In response to the start signal SPY supplied from the terminal 102 (terminal TSPY) and the wiring 105 (terminal TSPY), the transfer operation of the built-in shift register circuit is started. The scanning line driving circuit 104 scans at a predetermined timing based on the clock signal CLY and the antiphase clock signal CLYINV supplied via the terminal 102 (terminals TCLY, TCLYINV) and the wiring 105 (wiring LCLY, LCLYINV). A scanning signal is applied to the line 3a in a pulse-sequential manner.

  A wiring 105 (common potential line LVcom) is formed on the element substrate 10 so as to pass through the four inter-substrate conduction electrodes 19. The inter-substrate conduction electrode 19 includes a terminal 102 (terminal TVcom) and a wiring. The common potential Vcom is supplied via 105 (common potential line LVcom).

(Specific Configuration of Pixel 100a)
FIG. 3 is an explanatory diagram of the pixel 100a of the electro-optical device 100 according to the first embodiment of the present invention. FIG. 3A illustrates a planar configuration of a plurality of adjacent pixels in the element substrate 10. FIG. 3B shows the electro-optical device 100 at points (a)-(b)-(c)-(d)-(e)-(f)-(g)-() shown in FIG. The cross section when cut along h)-(i) is shown. In FIG. 3A, only main components such as the scanning line 3a and the data line 6a are shown, and the capacitor line 8a, the capacitor electrode layer 4a (first capacitor electrode layer), and the capacitor electrode layer 5a (second electrode) are shown. The illustration of the capacitor electrode layer and the like is omitted. Further, the thin films connected together in FIG. 3B are connected by a solid line connecting black circles. In FIG. 3B, only the common electrode 21 and the alignment film 26 are shown as the configuration on the counter substrate 20 side, and the illustration of the light shielding layer 29 and the microlens 27 is omitted.

  FIG. 4 is an explanatory diagram of a thin film and the like constituting the pixel switching element 30 in the element substrate 10 of the electro-optical device 100 according to Embodiment 1 of the present invention. FIG. The planar configuration of the layer 1a and the scanning line 3a is shown, and FIG. 4B shows the planar configuration of the data line 6 and the like. FIG. 5 is an explanatory diagram of a thin film or the like constituting the storage capacitor 55 in the element substrate 10 of the electro-optical device 100 according to Embodiment 1 of the present invention. FIG. FIG. 5B shows a planar configuration of the capacitive electrode layers 4a and 5a. FIG. 6 is an explanatory diagram of the pixel electrode 9a and the like formed on the element substrate 10 of the electro-optical device 100 according to Embodiment 1 of the present invention. FIG. 6 (a) shows the pixel electrode 9a and the conductive for shielding. The planar configuration of the film is shown, and FIG. 6B shows a planar layout of the pixel electrode 9a, the shielding conductive film 7a, and the data line 6a.

In FIG. 3B, FIG. 4, FIG. 5 and FIG. 6, each layer is represented by the following lines: Scan line 3a = thin solid line Semiconductor layer 1a = thin and short dotted line Gate electrode 3b = thick and short dotted line Data line 6a and relay Electrode 6b = Thick one-dot chain line Capacitance line 8a and relay electrode 8b = Thin and long broken line Capacitance electrode layer 4a (second capacitor electrode layer) = Thin two-dot chain line Capacitance electrode layer 5a (first capacitor electrode layer) = Thin one-dot chain line Shield Conductive film 7a = thick solid line Pixel electrode 9a = thick and long broken line.

  As shown in FIG. 3A, a pixel electrode 9a is formed on each of the plurality of pixels 100a on one surface 10s of the element substrate 10 facing the counter substrate 20, and is sandwiched between adjacent pixel electrodes 9a. A data line 6a and a scanning line 3a are formed along the inter-pixel region. In this embodiment, the inter-pixel region extends vertically and horizontally, and the scanning line 3a extends linearly along the first inter-pixel region extending in the X direction among the inter-pixel regions, and the data line 6a. Are linearly extended along the second inter-pixel region extending in the Y direction. That is, the scanning line 3a extends along the boundary between one pixel 100a and the pixel 100a adjacent to the one pixel 100a in the Y direction. The data line 6a extends along a boundary between one pixel 100a and the pixel 100a adjacent to the one pixel 100a in the X direction. In addition, a pixel switching element 30 is formed corresponding to the intersection of the data line 6a and the scanning line 3a. In this embodiment, the pixel switching element 30 is an intersection region between the data line 6a and the scanning line 3a and its vicinity. It is formed using. In the pixel 100a configured as described above, display light is transmitted through a light-transmitting region surrounded by the data line 6a and the scanning line 3a as a pixel opening.

  Hereinafter, each layer will be described with reference to FIGS. 3B, 4, 5, and 6. As shown in FIG. 3B, in the element substrate 10, the substrate surface on the electro-optic layer 50 side of the translucent substrate body 10w such as a quartz substrate or a glass substrate (on the one surface 10s side facing the counter substrate 20). A pixel electrode 9a, a pixel switching element 30, an alignment film 16 and the like are formed. In the counter substrate 20, the common electrode 21, the alignment film 26, and the like are provided on the substrate surface (one surface 20 s facing the element substrate 10) of the translucent substrate body 20 w such as a quartz substrate or a glass substrate. Is formed.

  Further, in the element substrate 10, a conductive polysilicon film, a metal silicide film, a metal film, a metal compound film, or the like is provided on one surface 10 s side of the substrate body 10 w (between the substrate body 10 w and the electro-optic layer 50). A scanning line 3a made of a conductive film is formed. In this embodiment, the scanning line 3a is made of tungsten silicide (WSi) and also functions as a light shielding film. For this reason, when the light that has passed through the electro-optical device 100 is reflected by another member, the scanning line 3a causes the reflected light to enter the semiconductor layer 1a and cause malfunction due to the photocurrent in the pixel switching element 30. Prevent it from occurring.

  A translucent interlayer insulating film 12 such as a silicon oxide film is formed on the upper layer side of the scanning line 3a (between the scanning line 3a and the electro-optic layer 50), and the surface side of the interlayer insulating film 12 ( A pixel switching element 30 including a semiconductor layer 1a is formed between the interlayer insulating film 12 and the electro-optic layer 50). The pixel switching element 30 is a thin film transistor, and includes a semiconductor layer 1a and a gate electrode 3b that extends in a direction orthogonal to the semiconductor layer 1a and overlaps the semiconductor layer 1a. The gate electrode 3b and the scanning line 3a are electrically connected via a contact hole 12a penetrating the interlayer insulating film 12.

  The pixel switching element 30 includes a translucent gate insulating layer 2 between the semiconductor layer 1a and the gate electrode 3b. The semiconductor layer 1a includes a channel region 1g facing the gate electrode 3b through the gate insulating layer 2, and a source region 1b on one side of the channel region 1g and a drain on the other side of the channel region 1g. A region 1c is provided. In this embodiment, the pixel switching element 30 has an LDD structure. Accordingly, each of the source region 1b and the drain region 1c has a low concentration region adjacent to the channel region 1g, and a high concentration region in a region adjacent to the low concentration region on the opposite side to the channel region 1g. .

  The semiconductor layer 1a is composed of a polysilicon film (polycrystalline silicon film). The gate insulating layer 2 includes a first gate insulating layer made of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 1a and a second silicon oxide film formed by a low pressure CVD method under a high temperature condition of 700 to 900 ° C. It has a two-layer structure with a gate insulating layer. The gate electrode 3b is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the gate electrode 3b is made of a conductive polysilicon film.

  As shown in FIG. 4A, the scanning line 3a includes a main line portion 3r that linearly extends in the X direction, and a rectangular portion 3s that overlaps with a crossing portion of the data line 6a described later and its periphery in plan view. The convex portion 3t extending along the data line 6a from the rectangular portion 3s toward the one side in the extending direction of the data line 6a, and the data from the rectangular portion 3s toward the other side in the extending direction of the data line 6a. And a convex portion 3u extending along the line 6a. The rectangular portion 3s is wider than the main line portion 3r, and the length of the convex portion 3t is larger than the length of the convex portion 3u.

  The semiconductor layer 1a extends from the position overlapping the rectangular portion 3s of the scanning line 3a in plan view to one side and the other side in the extending direction of the scanning line 3a.

  The gate electrode 3b includes rectangular portions 3e and 3f formed on both sides of the semiconductor layer 1a in the extending direction of the data line 6a, and a connecting portion 3g for connecting the end portions of the rectangular portions 3e and 3f. The connecting part 3g extends in a direction intersecting the semiconductor layer 1a, and a part of the connecting part 3g overlaps the semiconductor layer 1a in plan view.

  In FIG. 3B again, on the upper layer side of the gate electrode 3b (between the gate electrode 3b and the electro-optic layer 50), a light-transmitting interlayer insulation made of a silicon oxide film such as NSG, PSG, BSG, or BPSG. A film 41 is formed, and the data line 6 a and the relay electrode 6 b are formed in the same layer on the upper layer side of the interlayer insulating film 41 (between the interlayer insulating film 41 and the electro-optic layer 50). The data line 6a and the relay electrode 6b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the data line 6a and the relay electrode 6b are made of a single layer film or a laminated film of a metal film such as an aluminum film. The data line 6a is electrically connected to the source region 1b through a contact hole 41a that penetrates the interlayer insulating film 41 and the gate insulating layer 2, and the relay electrode 6b penetrates the interlayer insulating film 41 and the gate insulating layer 2. It is electrically connected to the drain region 1c through the contact hole 41b.

  As shown in FIG. 4B, the data line 6a includes a main line portion 6r linearly extending in the Y direction, a rectangular portion 6s overlapping the rectangular portion 3s of the scanning line 3a in plan view, and the rectangular portion 6s. And a convex portion 6t extending along the scanning line 3a toward one side in the extending direction of the scanning line 3a, and the convex portion 6t is electrically connected to the source region 1b via the contact hole 41a. doing. The relay electrode 6b is formed separately from the data line 6a on the opposite side of the protruding direction of the projection 6t with respect to the data line 6a, and overlaps the main line portion 3r of the scanning line 3a in plan view.

  In FIG. 3B again, on the upper side of the data line 6a and the relay electrode 6b (between the data line 6a and the electro-optic layer 50), a light transmission made of a silicon oxide film such as NSG, PSG, BSG, or BPSG. An insulating interlayer 42 is formed. On the upper layer side of the interlayer insulating film 42 (between the interlayer insulating film 42 and the electro-optic layer 50), the capacitor line 8a and the relay electrode 8b are formed in the same layer. The capacitor line 8a and the relay electrode 8b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the capacitor line 8a and the relay electrode 8b are made of a single layer film or a laminated film of a metal film such as an aluminum film. The relay electrode 8 b is electrically connected to the relay electrode 6 b through a contact hole 42 b that penetrates the interlayer insulating film 42.

  As shown in FIG. 5A, the capacitor line 8a extends in a plan view into a main line portion 8r that extends linearly in the Y direction and overlaps the main line portion 6r of the data line 6a, and a rectangular portion 6s of the data line 6a. The overlapping rectangular portion 8s, the convex portion 8t extending along the scanning line 3a from the rectangular portion 8s toward one side in the extending direction of the scanning line 3a, and the other side in the extending direction of the scanning line 3a from the rectangular portion 8s And a convex portion 8u extending along the scanning line 3a. Of the protrusions 8t and 8u, the protrusion 8t overlaps the protrusion 6t of the data line 6a in plan view, whereas the protrusion 8u does not overlap the data line 6a in plan view. In the present embodiment, the data line 6a and the capacitor line 8a have the same width dimension of the main line portions 6r and 8r, and the width dimensions of the protrusions 6t and 8t. The relay electrode 8b is formed separately from the capacitor line 8a on the opposite side of the convex portion 8u from the rectangular portion 8s. The relay electrode 8b overlaps the relay electrode 6b in plan view, and is electrically connected to the relay electrode 6b through the contact hole 42b.

  Referring to FIG. 3B again, a light transmission made of a silicon oxide film such as NSG, PSG, BSG, or BPSG is formed on the upper side of the capacitance line 8a and the relay electrode 8b (between the capacitance line 8a and the electro-optic layer 50). An interlayer insulating film 43 is formed, and a capacitor electrode layer 4a (“second capacitor electrode layer” in the present invention) is formed on the upper layer side (between the interlayer insulating film 43 and the electro-optical layer 50) of the interlayer insulating film 43. Is formed. The capacitive electrode layer 4a is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In the present embodiment, the capacitor electrode layer 4a is made of a single layer film or a laminated film of a metal film such as an aluminum film. The capacitor electrode layer 4 a is electrically connected to the capacitor line 8 a through a contact hole 43 c that penetrates the interlayer insulating film 43.

  A translucent dielectric layer 40 is formed on the upper layer side of the capacitive electrode layer 4a (between the capacitive electrode layer 4a and the electro-optic layer 50), and the upper layer side of the dielectric layer 40 (dielectric layer 40). And between the electro-optic layer 50) and the capacitive electrode layer 5a ("first capacitive electrode layer" in the present invention) is formed. The capacitive electrode layer 5 a is electrically connected to the relay electrode 8 b through a contact hole 43 b that penetrates the interlayer insulating film 43. As the dielectric layer 40, a silicon compound such as a silicon oxide film or a silicon nitride film can be used, and an aluminum oxide film, a titanium oxide film, a tantalum oxide film, a niobium oxide film, a hafnium oxide film, a lanthanum oxide film, zirconium A dielectric layer having a high dielectric constant such as an oxide film can be used. The capacitive electrode layer 5a is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the capacitor electrode layer 5a is made of a single layer film or a laminated film of a metal film such as an aluminum film. In this way, the capacitive electrode layer 5a constitutes the storage capacitor 55 in a region overlapping the capacitive electrode layer 4a in plan view with the dielectric layer 40 interposed therebetween.

  As shown in FIG. 5B, the capacitive electrode layer 4a includes a rectangular portion 4s that overlaps the rectangular portion 8s of the capacitive line 8a, and a convex portion 4r that protrudes from the rectangular portion 4s to one side in the extending direction of the data line 6a. A convex portion 4t protruding from the rectangular portion 4s to one side in the extending direction of the scanning line 3a, and a protruding portion 4u protruding from the rectangular portion 4s to the other side in the extending direction of the scanning line 3a. . Here, the rectangular portion 4 s of the capacitor electrode layer 4 a is electrically connected to the capacitor line 8 a via the contact hole 43 c of the interlayer insulating film 43.

  The capacitive electrode layer 5a includes a rectangular portion 5s that overlaps the rectangular portion 4s of the capacitive electrode layer 4a, a convex portion 5r that protrudes from the rectangular portion 5s to one side in the extending direction of the data line 6a, and a scanning line 3a from the rectangular portion 4s. The protrusion 5t protrudes to one side in the extending direction of the first and second protrusions 5u protruding from the rectangular portion 5s to the other side in the extending direction of the scanning line 3a. Here, the protrusion 5u protrudes from the protrusion 4u to the other side in the extending direction of the scanning line 3a in plan view, and the protrusion extends to the relay electrode 8b via the contact hole 43b of the interlayer insulating film 43. Electrically connected. In this embodiment, the convex portions 5r, 5t, and 5u of the capacitive electrode layer 5a are larger in width than the convex portions 4r, 4t, and 4u of the capacitive electrode layer 4a, and the rectangular portion 5s of the capacitive electrode layer 5a The size is larger than the rectangular portion 4s of the layer 4a. Therefore, the capacitive electrode layer 5a completely covers the capacitive electrode layer 4a in plan view.

  In FIG. 3B again, an interlayer insulating film 44 and an insulating layer 45 are formed on the upper side of the capacitive electrode layer 5a (between the capacitive electrode layer 5a and the electro-optic layer 50). On the upper layer side (between the insulating layer 45 and the electro-optic layer 50), a pixel electrode 9a made of a light-transmitting conductive film such as an ITO film is formed. The pixel electrode 9 a is electrically connected to the capacitor electrode layer 5 a through a contact hole 45 b that penetrates the interlayer insulating film 44 and the insulating layer 45. As a result, the pixel electrode 9a is electrically connected to the drain region 1c through the capacitive electrode layer 5a, the relay electrode 8b, and the relay electrode 6b. The interlayer insulating film 44 and the insulating layer 45 are made of a silicon oxide film such as NSG, PSG, BSG, or BPSG, and the surface of the interlayer insulating film 44 and the surface of the insulating layer 45 are all flattened.

  As shown in FIGS. 6A and 6B, the pixel electrode 9a has a rectangular planar shape, and overlaps the rectangular portion 5s of the capacitive electrode layer 5a among the four corner portions of the pixel electrode 9a. This portion is electrically connected to the capacitor electrode layer 5 a through a contact hole 45 b that penetrates the interlayer insulating film 44 and the insulating layer 45. Here, in the pixel electrode 9a, end portions 9r and 9s on both sides in the X direction overlap with the data line 6a in plan view, and end portions 9t and 9u on both sides in the X direction overlap with the scanning line 3a in plan view. Yes. In this embodiment, a shield conductive film 7a described later is formed between the interlayer insulating film 44 and the insulating layer 45 (between the data line 6a and the pixel electrode 9a).

In FIG. 3B again, an alignment film 16 made of polyimide or an inorganic alignment film is formed on the upper side of the pixel electrode 9a (between the pixel electrode 9a and the electro-optical layer 50). In this embodiment, the alignment film 16 is an obliquely deposited film of SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ or the like. (Inorganic alignment film). In the present embodiment, the alignment film 26 formed on the counter substrate 20 side is also SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ , as with the alignment film 16. An oblique deposition film (inorganic alignment film) of O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ or the like. The alignment films 16 and 26 tilt and vertically align the nematic liquid crystal compound having negative dielectric anisotropy used for the electro-optic layer 50, and the liquid crystal panel 100p operates as a normally black VA mode. In this embodiment, as the alignment films 16 and 26, an oblique vapor deposition film of a silicon oxide film (SiO _x ) is used among various inorganic alignment films.

(Conductive conductive film 7a)
As shown in FIG. 3B, a light-transmitting conductive film shields between the interlayer insulating film 44 and the insulating layer 45 (between the upper layer of the insulating layer 45 / the data line 6a and the pixel electrode 9a). The conductive film 7a is formed, and a constant potential is applied to the conductive film 7a. The potential applied to the conductive film 7a may be a constant potential, but in this embodiment, the common potential Vcom is applied to the conductive film 7a. Therefore, when polarity inversion driving is performed, the potential of the conductive film 7a is between the potential of the pixel electrode 9a and the data line 6a during positive polarity driving and the potential of the pixel electrode 9a and the data line 6a during negative polarity driving. Therefore, the influence on the potential of the data line 6a and the pixel electrode 9a can be reduced. Note that the potential is supplied to the conductive film 7a outside the display region 10a. Therefore, the configuration of the pixel 100a can be simplified, for example, it is not necessary to provide a contact hole for the conductive film 7a in the pixel 100a.

  As shown in FIGS. 6A and 6B, the conductive film 7a includes a main line portion 7r linearly extending in the Y direction and overlapping the main line portion 6r of the data line 6a, and a rectangular portion 6s of the data line 6a. And a rectangular portion 7s overlapping in plan view. In the rectangular portion 7s, a notch 7t is formed in a portion where a contact hole 45b that electrically connects the pixel electrode 9a and the capacitor electrode layer 5a is formed.

  Here, the main line portion 7r of the conductive film 7a is wider than the main line portion 6r of the data line 6a. Further, the main line portion 7r of the conductive film 7a is wider than the convex portion 5r of the capacitive electrode layer 5a. Therefore, the main line portion 7r of the conductive film 7a completely covers the main line portion 6r of the data line 6a and the convex portion 5r of the capacitor electrode layer 5a in plan view. The rectangular portion 7s of the conductive film 7a is larger in size than the rectangular portion 6s of the data line 6a and the rectangular portion 5s of the capacitive electrode layer 5a. Accordingly, the main line portion 7r of the conductive film 7a completely covers the rectangular portion 6s of the data line 6a and the rectangular portion 5s of the capacitive electrode layer 5a except for the portion where the notch 7t is formed in plan view. .

  In the electro-optical device 100 configured as described above, in this embodiment, at least a wavelength range of 400 nm to 500 nm (blue wavelength range), a wavelength range of 500 nm to 600 nm (green wavelength range), and a wavelength range of 600 nm to 700 nm ( In the red wavelength region), the transmittance of the conductive film 7a is higher than the transmittance of the pixel electrode 9a.

  More specifically, in this embodiment, since the conductive film 7a and the pixel electrode 9a are both made of an ITO film (for example, an ITO film formed by the same composition ratio and manufacturing method), the transmittance (absorption) at the unit thickness. Rate) is equal. However, in this embodiment, the conductive film 7a is thinner than the pixel electrode 9a. For this reason, the transmittance of the conductive film 7a is higher than the transmittance of the pixel electrode 9a over the entire visible region.

(Main effects of this form)
As described above, in the electro-optical device 100 according to this embodiment, a light-transmitting conductive film wider than the data line 6a is provided between the data line 6a and the pixel electrode 9a so as to cover the data line 6a in plan view. 7a is provided, and a constant potential is applied to the conductive film 7a. For this reason, since the parasitic capacitance between the data line 6a and the pixel electrode 9a can be reduced, the influence of the potential of the data line 6a hardly reaches the pixel electrode 9a.

  The conductive film 7a transmits at least in the wavelength range of 400 nm to 500 nm (blue wavelength range), the wavelength range of 500 nm to 600 nm (green wavelength range), and the wavelength range of 600 nm to 700 nm (red wavelength range). The rate is higher than the transmittance of the pixel electrode 9a. For this reason, even if the conductive film 7a having a width larger than that of the data line 6a is provided between the data line 6a and the pixel electrode 9a, the loss of the display light amount due to the conductive film 7a can be suppressed, and good transmission can be achieved. It has characteristics.

  In this embodiment, the transmittance of the conductive film 7a is made higher than the transmittance of the pixel electrode 9a by making the thickness of the conductive film 7a smaller than the thickness of the pixel electrode 9a. Therefore, the transmittance of the conductive film 7a can be made higher than the transmittance of the pixel electrode 9a with a relatively simple configuration.

  In this embodiment, when the storage capacitor 55 is configured, a capacitor electrode layer 5a (first capacitor electrode layer) electrically connected to the pixel electrode 9a is provided between the conductive film 7a and the data line 6a. A capacitive electrode layer 4a (second capacitive electrode layer) to which a constant potential (common potential Vcom) is applied is provided between the capacitive electrode layer 5a and the data line 6a. Even in such a structure, in this embodiment, the conductive film 7a completely covers the capacitive electrode layer 5a except for a portion where the notch 7t is formed. For this reason, it is not necessary to perform shielding between the pixel electrode 9a and the data line 6a by the capacitive electrode layer 4a. Therefore, since the capacitor electrode layer 4a does not have to be formed wide, even if a light-shielding conductive film is used for the capacitor electrode layer 4a, the pixel aperture ratio does not decrease.

[Modification 1 of Embodiment 1]
In this embodiment, the film thickness of the conductive film 7a is made smaller than the film thickness of the pixel electrode 9a, and the film thickness of the conductive film 7a, the insulating layer 45, and the pixel electrode 9a is optimized, respectively. The spectral characteristics of light transmitted through the insulating layer 45 and the conductive film 7a are optimized. That is, in this embodiment, the light-transmitting conductive film 7a, the light-transmitting insulating layer 45, and the light-transmitting pixel electrode 9a are stacked. When these films are transmitted, reflection at the interface and the interface The light intensity may be attenuated due to refraction at. Therefore, in this embodiment, based on the examination results described below, the pixel electrode 9a is an ITO film having a film thickness of 140 nm ± 10% (refractive index is 1.5 to 1.9), and the conductive film 7a is formed with a film thickness. Is a 140 nm ± 10% ITO film (refractive index is 1.5 to 1.9), and the insulating layer 45 is a silicon oxide film having a film thickness of 175 nm ± 10% (refractive index is 1.4 to 1.5). ).

  More specifically, as shown in Conditions 1 to 16 in Table 1, the pixel electrode 9a, the insulating layer 45, and the conductive film 7a are formed by changing the film thickness of the pixel electrode 9a, the insulating layer 45, and the conductive film 7a. The transmission spectral characteristics of the laminated part were simulated. The results are shown in FIGS.

  7 to 10 are graphs showing the results of simulating the spectral characteristics of transmitted light when the film thicknesses of the conductive film 7a, the insulating layer 45, and the pixel electrode 9a are changed. 7 shows the results of conditions 1, 11, 12, and 13, FIG. 8 shows the results of conditions 1, 2, 3, 4, 14, and 15, and FIG. The results of 5, 6, 7, and 8 are shown, and FIG. 10 shows the results of conditions 1, 9, 10, and 16. In the spectral characteristics shown in FIGS. 7 to 10, the peak value of the transmittance in the red wavelength range (600 nm to 700 nm) under the condition 1 is indexed as “1”. Moreover, this simulation result corresponds to the result of creating and evaluating a sample corresponding to each condition, and it has been confirmed that the evaluation in this simulation is appropriate.

  As can be seen from FIGS. 7 to 10, the pixel electrode 9a is an ITO film having a thickness of 140 nm ± 10%, the conductive film 7a is an ITO film having a thickness of 140 nm ± 10%, and the insulating layer 45 has a thickness of 175 nm. In conditions 1 to 10 where the silicon oxide film is ± 10%, the wavelength range from 400 nm to 500 nm (blue wavelength range), the wavelength range from 500 nm to 600 nm (green wavelength range), and the wavelength range from 600 nm to 700 nm (red color) The peak appears in each of the wavelength regions. That is, transmittance peaks appear in the vicinity of representative wavelengths corresponding to the three primary colors of light (near 460 nm, 550 nm, and 660 nm), which is ideal in terms of color reproducibility.

  On the other hand, in conditions 11 and 12, no peak appears in the wavelength range of 600 nm to 700 nm. Under condition 13, no peak appears in the wavelength region from 600 nm to 700 nm, and the peak in the wavelength region from 500 nm to 600 nm is low. In condition 14, a peak appears in each of the wavelength range from 400 nm to 500 nm, the wavelength range from 500 nm to 600 nm, and the wavelength range from 600 nm to 700 nm, but the peak in the wavelength range from 400 nm to 500 nm is 490 nm, And the transmittance | permeability in a wavelength range shorter than 490 nm is low. Under condition 14, a peak appears at around 430 nm, but light in the short wavelength region of 430 nm or less is often used after being cut, so that sufficient transmittance is obtained for light in the wavelength region of 400 to 500 nm. It cannot be said that it has. In condition 15, peaks appear in each of the wavelength range from 400 nm to 500 nm, the wavelength range from 500 nm to 600 nm, and the wavelength range from 600 nm to 700 nm, but the peak is on the short wavelength side as compared with conditions 1 to 10. Too much shift. In condition 16, peaks appear in each of the wavelength range from 400 nm to 500 nm, the wavelength range from 500 nm to 600 nm, and the wavelength range from 600 nm to 700 nm. Too much shift.

  Therefore, in terms of display color reproducibility, the pixel electrode 9a is an ITO film with a film thickness of 140 nm ± 10%, the conductive film 7a is an ITO film with a film thickness of 140 nm ± 10%, and the insulating layer 45 is formed with a film thickness. The conditions 1 to 10 in which a silicon oxide film having a thickness of 175 nm ± 10% is preferable. Further, from the viewpoint of reducing the light loss caused by the conductive film 7a by making the film thickness of the conductive film 7a smaller than the film thickness of the pixel electrode 9a, the pixel electrode 9a is formed to have a film thickness as in Condition 4. Is an ITO film having a thickness of 140 nm ± 10%, the conductive film 7a is an ITO film having a thickness of 140 nm ± 10%, and the insulating layer 45 is a silicon oxide film having a thickness of 175 nm ± 10%. It is preferable to make the film thickness thinner than the film thickness of the pixel electrode 9a.

[Improvement 2 of Embodiment 1]
In this embodiment, the film thickness of the conductive film 7a is made smaller than the film thickness of the pixel electrode 9a, and the film thickness of the conductive film 7a and the pixel electrode 9a is optimized, so that the sensitivity in human visibility characteristics is improved. The loss of the transmittance in the high wavelength region (530 nm to 590 nm) by the conductive film 7a for shielding is suppressed.

  More specifically, as shown in conditions 2 to 27 and conditions 31 to 42 in Table 2, the pixel electrode 9a and the conductive film 7a are stacked by changing the film thickness of the pixel electrode 9a and the conductive film 7a. The spectral characteristics of the part are simulated. The results are shown in FIGS.

  11 to 16 are graphs showing the results of simulating the spectral characteristics of transmitted light when the film thicknesses of the conductive film 7a and the pixel electrode 9a are changed. 11 shows the results of conditions 21, 31, 32, 33, and 34, FIG. 12 shows the results of conditions 21, 22, 35, and 36, and FIG. The results of 37 and 38 are shown, FIG. 14 shows the results of conditions 21, 24, 39, and 40, and FIG. 15 shows the results of conditions 21, 25, 41, and 42. In the spectral characteristics shown in FIGS. 11 to 16, the maximum value of the transmittance is indexed as “1”. Moreover, this simulation result corresponds to the result of creating and evaluating a sample corresponding to each condition, and it has been confirmed that the evaluation in this simulation is appropriate.

  As can be seen from FIG. 11 to FIG. 16, in the conditions 21 to 27, the pixel electrode 9a is an ITO film having a film thickness of 140 nm ± 10% and the conductive film 7a is an ITO film having a film thickness of 140 nm ± 10%. The spectral characteristic of the transmitted light in the region where 7a, the insulating layer 45, and the pixel electrode 9a overlap has a peak in the wavelength range of 530 nm to 590 nm. Therefore, the transmittance in the wavelength region where the sensitivity is high in human visibility characteristics is high.

  On the other hand, in conditions 31, 32, 33, and 34, the peak wavelengths are 440 nm, 500 nm, 470 nm and 620 nm, and 500 nm and 680 nm, and there is no peak in the wavelength range of 530 nm to 590 nm. Under conditions 35 and 36, the peak wavelengths are 450 nm and 600 nm, and 460 nm and 630 nm, and there is no peak in the wavelength range of 530 nm to 590 nm. Under conditions 37 and 38, the peak wavelengths are 400 nm, 520 nm, and 500 nm, and no peaks are present in the wavelength range of 530 nm to 590 nm. Under conditions 39 and 40, the peak wavelengths are 450 nm and 600 nm, and 460 nm and 620 nm, and there is no peak in the wavelength range of 530 nm to 590 nm. In the conditions 41 and 42, the peak wavelengths are 520 nm and 500 nm, and there is no peak in the wavelength range from 530 nm to 590 nm.

  Therefore, from the viewpoint of displaying an image that looks bright by increasing the transmittance in a wavelength range (530 nm to 590 nm) with high sensitivity in human visibility characteristics, the pixel electrode 9a is made of ITO having a film thickness of 140 nm ± 10%. It is preferable that the conditions 21 to 27 be a film, and the conductive film 7a is an ITO film having a thickness of 140 nm ± 10%. Further, from the viewpoint of reducing the loss of light amount caused by the conductive film 7a by making the film thickness of the conductive film 7a smaller than the film thickness of the pixel electrode 9a, the pixel electrode 9a as in the condition 23 and the condition 27 is achieved. Is an ITO film having a film thickness of 140 nm ± 10%, and the conductive film 7a is an ITO film having a film thickness of 140 nm ± 10%, and the film thickness of the conductive film 7a is made smaller than the film thickness of the pixel electrode 9a. preferable.

[Modification 3 of Embodiment 1]
In this embodiment, the film thickness of the conductive film 7a is made smaller than the film thickness of the pixel electrode 9a, and the reflection at each interface is suppressed, thereby reducing the display light amount loss.

More specifically, the film thickness of the pixel electrode 9a and d _1, the refractive index with respect to light having a wavelength λ of the pixel electrode 9a and n _1, the film thickness of the portion overlapping with the conductive film 7a of the insulating layer 45 and d ₂ When the refractive index of the insulating layer 45 with respect to light of wavelength λ is n ₂ , the thickness of the conductive film 7 a is d _3, and the refractive index of the conductive film 7 a with respect to light of wavelength λ is n ₃ ,
d ₁ , d ₂ , d ₃ , n ₁ , n ₂ and n ₃ are the following conditions (1), (2)
n ₁ × d ₁ + n ₂ × d ₂ = λ (1/4 + m / 2) (1)
n ₂ × d ₂ + n ₃ × d ₄ = λ (1/4 + n / 2) (2)
Where λ is the wavelength of the incident light
m and n are integers of 0 or more
n ₁ > n ₂
n ₃ > n ₂ , n ₁ > (refractive index of alignment film 16)
n ₃ > (refractive index of interlayer insulating film 44)
Use a configuration that meets the requirements. Here, λ is the wavelength of incident light, for example, a predetermined wavelength from 530 nm to 590 nm is set. The alignment film 16 corresponds to a light-transmitting film that is in contact with the pixel electrode 9a on the side opposite to the conductive film 7a, and the interlayer insulating film 44 is a light-transmitting film that is in contact with the conductive film 7a on the side opposite to the pixel electrode 9a. Corresponds to the membrane.

  According to such a configuration, when light passes through a region where the pixel electrode 9a, the insulating layer 45, and the conductive film 7a overlap in plan view, the interface between the alignment film 16 and the pixel electrode 9a with respect to light having a wavelength of λ. The optical path length is set so that the phases of the light reflected at the interface and the light reflected at the interface between the insulating layer 45 and the conductive film 7a cancel each other, and the light reflected at the interface between the pixel electrode 9a and the insulating layer 45 and the conductive film 7a. Since the optical path length is set so that the phases of the light reflected at the interface of the interlayer insulating film 44 cancel each other, the amount of reflected light can be reduced. Therefore, it is possible to suppress a loss of display light amount due to the conductive film 7a.

[Embodiment 2]
In this embodiment, regardless of the thickness of the conductive film 7a and the pixel electrode 9a, the pixel electrode 9a and the insulating layer are optimized by optimizing the thickness of the conductive film 7a, the insulating layer 45, and the pixel electrode 9a. 45 and the spectral characteristics of light transmitted through the conductive film 7a are optimized. That is, in this embodiment, the light-transmitting conductive film 7a, the light-transmitting insulating layer 45, and the light-transmitting pixel electrode 9a are stacked. When these films are transmitted, reflection at the interface and the interface The light intensity may be attenuated due to refraction at. Therefore, in the present embodiment, based on the examination results described with reference to Table 1 and FIGS. 7 to 10, the pixel electrode 9 a is formed of an ITO film (refracted 140 nm ± 10%) as in Conditions 1 to 10. The film thickness is 140 nm ± 10% ITO film (refractive index is 1.5 to 1.9), and the insulating layer 45 is 175 nm ± 10. % Silicon oxide film (refractive index of 1.4 to 1.5). Other configurations are the same as those of the first embodiment.

  According to such a configuration, there is a peak in each of the wavelength range from 400 nm to 500 nm (blue wavelength range), the wavelength range from 500 nm to 600 nm (green wavelength range), and the wavelength range from 600 nm to 700 nm (red wavelength range). It has good transmission characteristics suitable for displaying a color image, such as appearing. Therefore, it is ideal in terms of color reproducibility.

[Embodiment 3]
In this embodiment, regardless of the thicknesses of the conductive film 7a and the pixel electrode 9a, the film thickness of the conductive film 7a and the pixel electrode 9a is optimized, so that the wavelength with high sensitivity in human visibility characteristics is obtained. The loss of the transmittance in the region (530 nm to 590 nm) by the conductive film 7a for shielding is suppressed.

  More specifically, based on the examination results described with reference to Table 2 and FIGS. 11 to 16, as shown in Conditions 21 to 27, the pixel electrode 9a is an ITO film having a thickness of 140 nm ± 10%. The conductive film 7a is an ITO film having a thickness of 140 nm ± 10%. Other configurations are the same as those of the first embodiment.

  According to such a configuration, the spectral characteristic of transmitted light in the region where the conductive film 7a, the insulating layer 45, and the pixel electrode 9a overlap has a peak in the wavelength range of 530 nm to 590 nm. Therefore, the transmittance in the wavelength region where the sensitivity is high in human visibility characteristics is high. Therefore, it has good transmission characteristics suitable for displaying color images.

[Embodiment 4]
In this embodiment, regardless of the film thickness of the conductive film 7a and the pixel electrode 9a, the loss of the display light amount is reduced by suppressing the reflection at each interface.

More specifically, the film thickness of the pixel electrode 9a and d _1, the refractive index with respect to light having a wavelength λ of the pixel electrode 9a and n _1, the film thickness of the portion overlapping with the conductive film 7a of insulating layer 45 and d ₂ When the refractive index of the insulating layer 45 with respect to light of wavelength λ is n ₂ , the thickness of the conductive film 7 a is d _3, and the refractive index of the conductive film 7 a with respect to light of wavelength λ is n ₃ ,
d ₁ , d ₂ , d ₃ , n ₁ , n ₂ and n ₃ are the following conditions (1), (2)
n ₁ × d ₁ + n ₂ × d ₂ = λ (1/4 + m / 2) (1)
n ₂ × d ₂ + n ₃ × d ₄ = λ (1/4 + n / 2) (2)
Where λ is the wavelength of the incident light
m and n are integers of 0 or more
n ₁ > n ₂
n ₃ > n ₂ , n ₁ > (refractive index of alignment film 16)
n ₃ > (refractive index of interlayer insulating film 44)
Use a configuration that meets the requirements. Here, λ is the wavelength of incident light, for example, a predetermined wavelength from 530 nm to 590 nm is set. The alignment film 16 corresponds to a light-transmitting film that is in contact with the pixel electrode 9a on the side opposite to the conductive film 7a, and the interlayer insulating film 44 is a light-transmitting film that is in contact with the conductive film 7a on the side opposite to the pixel electrode 9a. Corresponds to the membrane. Other configurations are the same as those of the first embodiment.

  According to such a configuration, when light passes through a region where the pixel electrode 9a, the insulating layer 45, and the conductive film 7a overlap in plan view, the interface between the alignment film 16 and the pixel electrode 9a with respect to light having a wavelength of λ. The optical path length is set so that the phases of the light reflected at the interface and the light reflected at the interface between the insulating layer 45 and the conductive film 7a cancel each other, and the light reflected at the interface between the pixel electrode 9a and the insulating layer 45 and the conductive film 7a. Since the optical path length is set so that the phases of the light reflected at the interface of the interlayer insulating film 44 cancel each other, the amount of reflected light can be reduced. Therefore, it is possible to suppress a loss of display light amount due to the conductive film 7a.

[Modification of Embodiment 1]
In the first embodiment, the same kind of light-transmitting conductive film is used as the conductive film 7a and the pixel electrode 9a, and the conductive film 7a is made thinner than the pixel electrode 9a so that the conductive film can be conductive over the entire visible region. Although the transmittance of the film 7a is higher than the transmittance of the pixel electrode 9a, different translucent conductive films are used for the conductive film 7a and the pixel electrode 9a, and the transmittance of the conductive film 7a is changed to the transmittance of the pixel electrode 9a. It may be higher. That is, the light absorption rate of the conductive film 7a may be lower than the light absorption rate of the pixel electrode 9a.

  For example, a high-temperature annealed ITO film may be used as the conductive film 7a, an IZO film formed at room temperature may be used for the pixel electrode 9a, and the transmittance of the conductive film 7a may be higher than the transmittance of the pixel electrode 9a.

[Improvements of Embodiments 1 to 4]
FIG. 17 is an explanatory diagram showing a side shape of the conductive film 7a formed in the electro-optical device 100 according to the improved example of the invention.

  As described with reference to FIG. 1, when the microlens 27 is formed on the counter substrate 20, the light L emitted from the microlens 27 is focused on the pixel electrode 9a as convergent light as shown in FIG. To reach. In this case, the side surface of the conductive film 7a is orthogonal to the upper and lower surfaces of the conductive film 7a (the configuration in which the substantially parallel light incident on the microlens 27 and the side surface of the conductive film 7a are formed in parallel). The light L incident at a predetermined angle from the upper surface of the conductive film 7a is emitted to the insulating layer 45 from the side surface of the conductive film 7a. At this time, the light L is affected by refraction and the like depending on the angle formed between the side surface of the conductive film 7a and the light L. As a result, stray light is generated. Therefore, in this embodiment, as shown in FIG. 17, the side surface 7w of the conductive film 7a is inclined obliquely toward the side where the microlens 27 is located. In other words, the side surface 7w of the conductive film 7a is inclined along the inclination direction of the emitted light when parallel light enters the peripheral portion of the microlens 27. For this reason, since the light L does not easily enter the side surface 7w of the conductive film 7a, generation of stray light due to the light incident on the side surface 7w of the conductive film 7a can be suppressed.

[Other embodiments]
In the above embodiment, the storage electrode is formed by providing the capacitor electrode layers 4a and 5a separately from the conductive film 7a. However, by utilizing the common potential Vcom applied to the conductive film 7a, A capacitive electrode layer electrically connected to the pixel electrode 9a is provided so as to at least partially overlap the conductive film 7a in plan view between the data line 6a and between the conductive film 7a and the capacitive electrode layer. A dielectric film may be provided. According to such a configuration, the storage capacitor 55 can be configured using the conductive film 7a used for the shield, so that the types of films forming the pixel 100a can be reduced.

  In the above embodiment, since the thick insulating film is interposed between the pixel electrode 9a and the gate electrode 3b or the scanning line 3a, the conductive film 7a is provided only in the region overlapping the data line 6a. The conductive film 7a may be provided in a region overlapping with the conductive film 7a.

  In the above embodiment, the semiconductor layer 1a extends along the scanning line 3a. However, a configuration in which the semiconductor layer 1a extends along the data line 6a may be adopted.

  In the above embodiment, the capacitor line 8a extends along the data line 6a. However, a configuration in which the capacitor line 8a extends along the scanning line 3a may be employed.

[Other electro-optical devices]
In the above-described embodiment, the liquid crystal device has been described as an example of the electro-optical device, but the present invention is not limited to this, and an organic electroluminescence display device, a plasma display, an FED (Field Emission Display), an SED (Surface-) The present invention may be applied to electro-optical devices such as a Conduction Electron-Emitter Display (LED), an LED (light emitting diode) display device, and an electrophoretic display device.

[Example of mounting on electronic devices]
(Configuration example of projection display device and optical unit)
FIG. 18 is a schematic configuration diagram of a projection display device (electronic device) and an optical unit to which the present invention is applied.

  A projection display device 110 shown in FIG. 18 is a so-called projection type projection display device that irradiates light onto a screen 111 provided on the viewer side and observes light reflected by the screen 111. The projection display device 110 includes a light source unit 130 including a light source 112, dichroic mirrors 113 and 114, liquid crystal light valves 115 to 117, a projection optical system 118, a cross dichroic prism 119 (combining optical system), and a relay. The electro-optical device 100 and the cross dichroic prism 119 constitute an optical unit 200.

  The light source 112 is composed of an ultrahigh pressure mercury lamp that supplies light including red light R, green light G, and blue light B. The dichroic mirror 113 is configured to transmit the red light R from the light source 112 and reflect the green light G and the blue light B. The dichroic mirror 114 is configured to transmit the blue light B and reflect the green light G out of the green light G and the blue light B reflected by the dichroic mirror 113. Thus, the dichroic mirrors 113 and 114 constitute a color separation optical system that separates the light emitted from the light source 112 into red light R, green light G, and blue light B.

  Here, between the dichroic mirror 113 and the light source 112, an integrator 121 and a polarization conversion element 122 are arranged in order from the light source 112. The integrator 121 is configured to uniformize the illuminance distribution of the light emitted from the light source 112. Further, the polarization conversion element 122 is configured to change the light from the light source 112 into polarized light having a specific vibration direction such as s-polarized light.

  The liquid crystal light valve 115 is a transmissive liquid crystal device that modulates red light transmitted through the dichroic mirror 113 and reflected by the reflection mirror 123 in accordance with an image signal. The liquid crystal light valve 115 includes a λ / 2 phase difference plate 115a, a first polarizing plate 115b, an electro-optical device 100 (red liquid crystal panel 100R), and a second polarizing plate 115d. Here, the red light R incident on the liquid crystal light valve 115 remains as s-polarized light because the polarization of the light does not change even if it passes through the dichroic mirror 113.

  The λ / 2 phase difference plate 115a is an optical element that converts s-polarized light incident on the liquid crystal light valve 115 into p-polarized light. The first polarizing plate 115b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The electro-optical device 100 (the red liquid crystal panel 100R) is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to an image signal. Furthermore, the second polarizing plate 115d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 115 is configured to modulate the red light R according to the image signal and emit the modulated red light R toward the cross dichroic prism 119.

  Note that the λ / 2 phase difference plate 115a and the first polarizing plate 115b are disposed in contact with a light-transmitting glass plate 115e that does not convert the polarization, and the λ / 2 phase difference plate 115a and the first polarization plate 115b are arranged in contact with each other. It is possible to avoid the polarizing plate 115b from being distorted by heat generation.

  The liquid crystal light valve 116 is a transmissive liquid crystal device that modulates green light G reflected by the dichroic mirror 114 after being reflected by the dichroic mirror 113 in accordance with an image signal. Similar to the liquid crystal light valve 115, the liquid crystal light valve 116 includes a first polarizing plate 116b, an electro-optical device 100 (green liquid crystal panel 100G), and a second polarizing plate 116d. Green light G incident on the liquid crystal light valve 116 is s-polarized light that is reflected by the dichroic mirrors 113 and 114 and then incident. The first polarizing plate 116b is a polarizing plate that blocks p-polarized light and transmits s-polarized light. The electro-optical device 100 (green liquid crystal panel 100G) is configured to convert s-polarized light into p-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to an image signal. The second polarizing plate 116d is a polarizing plate that blocks s-polarized light and transmits p-polarized light. Therefore, the liquid crystal light valve 116 is configured to modulate the green light G in accordance with the image signal and emit the modulated green light G toward the cross dichroic prism 119.

  The liquid crystal light valve 117 is a transmissive liquid crystal device that modulates the blue light B reflected by the dichroic mirror 113, transmitted through the dichroic mirror 114, and then passed through the relay system 120 in accordance with an image signal. Like the liquid crystal light valves 115 and 116, the liquid crystal light valve 117 includes a λ / 2 phase difference plate 117a, a first polarizing plate 117b, an electro-optical device 100 (blue liquid crystal panel 100B), and a second polarizing plate 117d. I have. Here, the blue light B incident on the liquid crystal light valve 117 is reflected by two reflecting mirrors 125a and 125b (to be described later) of the relay system 120 after being reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114. It has become.

  The λ / 2 phase difference plate 117a is an optical element that converts s-polarized light incident on the liquid crystal light valve 117 into p-polarized light. The first polarizing plate 117b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The electro-optical device 100 (blue liquid crystal panel 100B) is configured to convert p-polarized light to s-polarized light (circularly polarized light or elliptically polarized light if it is a halftone) by modulation according to an image signal. Furthermore, the second polarizing plate 117d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 117 is configured to modulate the blue light B according to the image signal and emit the modulated blue light B toward the cross dichroic prism 119. The λ / 2 phase difference plate 117a and the first polarizing plate 117b are arranged in contact with the glass plate 117e.

  The relay system 120 includes relay lenses 124a and 124b and reflection mirrors 125a and 125b. The relay lenses 124a and 124b are provided to prevent light loss due to the long optical path of the blue light B. Here, the relay lens 124a is disposed between the dichroic mirror 114 and the reflection mirror 125a. The relay lens 124b is disposed between the reflection mirrors 125a and 125b. The reflection mirror 125a is disposed so as to reflect the blue light B transmitted through the dichroic mirror 114 and emitted from the relay lens 124a toward the relay lens 124b. The reflection mirror 125b is disposed so as to reflect the blue light B emitted from the relay lens 124b toward the liquid crystal light valve 117.

  The cross dichroic prism 119 is a color combining optical system in which two dichroic films 119a and 119b are arranged orthogonally in an X shape. The dichroic film 119a is a film that reflects blue light B and transmits green light G, and the dichroic film 119b is a film that reflects red light R and transmits green light G. Therefore, the cross dichroic prism 119 is configured to combine the red light R, the green light G, and the blue light B modulated by each of the liquid crystal light valves 115 to 117 and emit the resultant light toward the projection optical system 118. Yes.

  Note that light incident on the cross dichroic prism 119 from the liquid crystal light valves 115 and 117 is s-polarized light, and light incident on the cross dichroic prism 119 from the liquid crystal light valve 116 is p-polarized light. Thus, by making the light incident on the cross dichroic prism 119 into different types of polarized light, the light incident from the liquid crystal light valves 115 to 117 in the cross dichroic prism 119 can be synthesized. Here, in general, the dichroic films 119a and 119b are excellent in s-polarized reflection transistor characteristics. For this reason, red light R and blue light B reflected by the dichroic films 119a and 119b are s-polarized light, and green light G transmitted through the dichroic films 119a and 119b is p-polarized light. The projection optical system 118 has a projection lens (not shown) and is configured to project the light combined by the cross dichroic prism 119 onto the screen 111.

(Other projection display devices)
In the projection display device, an LED light source that emits light of each color may be used as the light source unit, and the color light emitted from the LED light source may be supplied to another liquid crystal device.

(Other electronic devices)
As for the electro-optical device 100 to which the present invention is applied, in addition to the electronic devices described above, mobile phones, personal digital assistants (PDAs), digital cameras, liquid crystal televisions, car navigation devices, video phones, POS terminals In addition, it may be used as a direct-view display device in an electronic device such as a device provided with a touch panel.

3a..scanning line, 4a..capacitance electrode layer (second capacitance electrode layer), 5a..capacitance electrode layer (first capacitance electrode layer), 6a..data line, 7a..conductive layer for shielding, 7w ..Side conductive layer side surface, 8a..Capacitance line, 9a..Pixel electrode, 10..Element substrate (electro-optical device substrate), 20..Counter substrate, 21..Common electrode, 27 .. Micro lens, 30 ... Pixel switching element, 45 ... Insulating layer, 100 ... Electro-optical device

Claims (14)

Data lines,
A pixel switching element electrically connected to the data line;
A translucent pixel electrode electrically connected to the switching element;
A light-transmitting conductive film formed wider than the data line so as to cover the data line in plan view between the data line and the pixel electrode;
Have
An electro-optical device, wherein the transmittance of the conductive film is higher than the transmittance of the pixel electrode in at least a wavelength range of 400 nm to 500 nm, a wavelength range of 500 nm to 600 nm, and a wavelength range of 600 nm to 700 nm.   The electro-optical device according to claim 1, wherein a thickness of the conductive film is smaller than a thickness of the pixel electrode. A translucent insulating layer is provided between the pixel electrode and the conductive film;
The pixel electrode is an ITO film having a thickness of 140 nm ± 10%,
The conductive film is an ITO film having a thickness of 140 nm ± 10%,
The electro-optical device according to claim 1, wherein the insulating layer is a silicon oxide film having a thickness of 175 nm ± 10%. A translucent insulating layer is provided between the pixel electrode and the conductive film;
The pixel electrode is an ITO film having a thickness of 140 nm ± 10%,
The electro-optical device according to claim 1, wherein the conductive film is an ITO film having a thickness of 140 nm ± 10%. A translucent insulating layer is provided between the pixel electrode and the conductive film;
The film thickness of the pixel electrode is d _1, and the refractive index of the pixel electrode with respect to light of wavelength λ is n ₁ ,
The thickness of the portion of the insulating layer that overlaps the conductive film is d _2, and the refractive index of the insulating layer with respect to light of wavelength λ is n ₂ ,
When the film thickness of the conductive film is d ₃ and the refractive index of the conductive film with respect to light of wavelength λ is n ₃ ,
d ₁ , d ₂ , d ₃ , n ₁ , n ₂ and n ₃ are the following conditions (1), (2)
n ₁ × d ₁ + n ₂ × d ₂ = λ (1/4 + m / 2) (1)
n ₂ × d ₂ + n ₃ × d ₄ = λ (1/4 + n / 2) (2)
Where λ is the wavelength of the incident light
m and n are integers of 0 or more
n ₁ > n ₂
n ₃ > n ₂
n ₁ > (refractive index of the transparent film in contact with the pixel electrode on the side opposite to the conductive film)
n ₃ > (refractive index of the light-transmitting film contacting the conductive film on the side opposite to the pixel electrode)
The electro-optical device according to claim 1, wherein:   2. The conductive film has a higher transmittance in unit thickness than the pixel electrode in at least a wavelength range of 400 nm to 500 nm, a wavelength range of 500 nm to 600 nm, and a wavelength range of 600 nm to 700 nm. The electro-optical device according to 2 or 5. A counter electrode facing the pixel electrode;
An electro-optic layer disposed between the counter electrode and the pixel electrode;
Have
The electro-optical device according to claim 1, wherein the same constant potential is applied to the counter electrode and the conductive film. A first capacitor electrode layer provided between the conductive film and the data line and electrically connected to the pixel electrode;
A second capacitive electrode layer provided between the first capacitive electrode layer and the data line so as to at least partially overlap with the first capacitive electrode layer, to which a constant potential is applied;
A dielectric film provided between the first capacitor electrode layer and the second capacitor electrode layer;
Have
8. The conductive film according to claim 1, wherein a portion extending along the data line is wider than the first capacitor electrode layer and the second capacitor electrode layer. The electro-optical device according to Item. A capacitive electrode layer provided between the conductive film and the data line so as to at least partially overlap the conductive film in a plan view, and electrically connected to the pixel electrode;
A dielectric film disposed between the conductive film and the capacitive electrode layer;
The electro-optical device according to claim 1, wherein the electro-optical device is provided.   The microlens is opposed to the pixel electrode on the side opposite to the conductive film, and a side surface of the conductive film is inclined obliquely toward a side where the microlens is located. Item 10. The electro-optical device according to any one of Items 1 to 9. Data lines,
A pixel switching element electrically connected to the data line;
A translucent pixel electrode electrically connected to the switching element;
A light-transmitting conductive film formed wider than the data line so as to cover the data line in plan view between the data line and the pixel electrode;
Have
A translucent insulating layer is provided between the pixel electrode and the conductive film;
The pixel electrode is an ITO film having a thickness of 140 nm ± 10%,
The conductive film is an ITO film having a thickness of 140 nm ± 10%,
The electro-optical device, wherein the insulating layer is a silicon oxide film having a thickness of 175 nm ± 10%. Data lines,
A pixel switching element electrically connected to the data line;
A translucent pixel electrode electrically connected to the switching element;
A light-transmitting conductive film formed wider than the data line so as to cover the data line in plan view between the data line and the pixel electrode;
Have
A translucent insulating layer is provided between the pixel electrode and the conductive film;
The pixel electrode is an ITO film having a thickness of 140 nm ± 10%,
The electro-optical device, wherein the conductive film is an ITO film having a thickness of 140 nm ± 10%. Data lines,
A pixel switching element electrically connected to the data line;
A translucent pixel electrode electrically connected to the switching element;
A light-transmitting conductive film formed wider than the data line so as to cover the data line in plan view between the data line and the pixel electrode;
Have
A translucent insulating layer is provided between the pixel electrode and the conductive film;
The film thickness of the pixel electrode is d _1, and the refractive index of the pixel electrode with respect to light of wavelength λ is n ₁ ,
The thickness of the portion of the insulating layer that overlaps the conductive film is d _2, and the refractive index of the insulating layer with respect to light of wavelength λ is n ₂ ,
When the film thickness of the conductive film is d ₃ and the refractive index of the conductive film with respect to light of wavelength λ is n ₃ ,
d ₁ , d ₂ , d ₃ , n ₁ , n ₂ and n ₃ are the following conditions (1), (2)
n ₁ × d ₁ + n ₂ × d ₂ = λ (1/4 + m / 2) (1)
n ₂ × d ₂ + n ₃ × d ₄ = λ (1/4 + n / 2) (2)
Where λ is the wavelength of the incident light
m and n are integers of 0 or more
n ₁ > n ₂
n ₃ > n ₂
n ₁ > (refractive index of the transparent film in contact with the pixel electrode on the side opposite to the conductive film)
n ₃ > (refractive index of the light-transmitting film contacting the conductive film on the side opposite to the pixel electrode)
An electro-optical device characterized by satisfying   An electronic apparatus comprising the electro-optical device according to claim 1.

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