JP2014165462A - Semiconductor chip manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor chip manufacturing method which can prevent contamination of a chip and an adhesive film and obtain a semiconductor chip with an adhesive film in a simple method.SOLUTION: A semiconductor chip manufacturing method comprises: (a) a process of attaching a die bonding adhesive film to a circuit surface of a semiconductor wafer on which the circuit is formed on a surface; (b) a process of laminating an adhesive film and a surface protection sheet; (e) a process of making laser beams enter from a wafer rear face side to form a reformed region layer which is partitioned for each circuit on the wafer; (c) a process of grinding the rear face of the semiconductor wafer to singulate the wafer starting from the reformed region layer with respect to each circuit to obtain a group of divided chips; and (d) a process of singulating the adhesive film with respect to each chip by expanding the surface protection sheet to obtain chips each having the adhesive film on the circuit surface.

Description

  The present invention relates to a method for manufacturing a semiconductor chip, and more specifically, a dicing method in which a modified region layer is formed inside a wafer by laser light to divide the wafer into chips (chips), and a mounting process employing flip chip bonding. The present invention relates to a method for manufacturing a semiconductor chip that can contribute to the simplification of the manufacturing process and the improvement of product quality.

  2. Description of the Related Art In recent years, semiconductor devices have been manufactured using a so-called “face down” mounting method. In the face-down method, a semiconductor chip (hereinafter simply referred to as “chip”) having electrodes such as bumps on a circuit surface is used, and the electrodes are bonded to a substrate.

  A semiconductor chip is obtained by dividing a semiconductor wafer into pieces, and an adhesive film for die bonding (hereinafter simply referred to as “adhesive film”) may be used for bonding between an electrode provided on a circuit surface of a chip and a substrate. Is used).

In Patent Document 1 (Japanese Patent Laid-Open No. 2008-98427), an adhesive film for die bonding is laminated on a circuit surface of a wafer, the adhesive film is completely cut, and a depth of cut shallower than the wafer thickness from the wafer surface is disclosed. A method is described in which, after forming a groove in a laminate of an adhesive film and a wafer, a surface protection sheet is applied to the adhesive film, and the wafer is ground by grinding the back surface of the wafer.
However, when the method of Patent Document 1 is adopted, a groove is usually formed by a rotating blade, but since the exposed adhesive film and the wafer are cut, there is a problem that the adhesive film is contaminated by cutting water. . It is conceivable to provide a cover sheet so that the adhesive film is not exposed, but such a sheet will also be cut at the same time as the groove is formed, so that it will be a hindrance to cutting and cut into the same shape as the chip. It is not efficient because the used sheet has to be removed. In addition, cutting water may enter the groove and the chip may be contaminated.

JP 2008-98427 A

  The present invention has been made in view of the above circumstances. That is, an object of the present invention is to provide a method of manufacturing a semiconductor chip that can prevent contamination of the chip and the adhesive film and obtain a semiconductor chip with an adhesive film by a simple method.

The present invention includes the following gist.
[1] (a) A step of attaching an adhesive film for die bonding to a circuit surface of a semiconductor wafer having a circuit formed on the surface;
(B) a step of laminating an adhesive film for die bonding and a surface protective sheet;
(C) grinding the back surface of the semiconductor wafer, separating the wafer into individual circuits, and obtaining a group of divided chips;
(D) a step of expanding the surface protection sheet to separate the die bonding adhesive film for each chip and obtaining a chip having the die bonding adhesive film on the circuit surface; and (e) a laser from the wafer back side. A step of forming a modified region layer on the wafer by entering light and partitioning each circuit;
Steps (a) to (d) are performed in this order, or steps (b), (a), (c), and (d) are performed in this order.
The step (e) is performed before the step (c), and in the step (c), the wafer is separated into individual circuits starting from the modified region layer.
Semiconductor chip manufacturing method.

[2] (a) a step of attaching an adhesive film for die bonding to a circuit surface of a semiconductor wafer having a circuit formed on the surface;
(B) a step of laminating an adhesive film for die bonding and a surface protective sheet;
(C) grinding the back surface of the semiconductor wafer, separating the wafer into individual circuits, and obtaining a group of divided chips;
(F) A process of attaching an adhesive sheet to the back surface of the group of divided chips,
(G) peeling the surface protective sheet and obtaining a group of chips having an adhesive film for die bonding;
(D) expanding the pressure-sensitive adhesive sheet to separate the die bonding adhesive film for each chip and obtaining a chip having the die bonding adhesive film on the circuit surface; and (e) laser light from the wafer back side. And forming a modified region layer that divides each circuit into a wafer,
Step (a), Step (b), Step (c), Step (f), Step (g) and Step (d) are performed in this order, or Step (b), Step (a), Step (c) Step, (f) step, (g) step and (d) step are performed in this order,
The step (e) is performed before the step (c), and in the step (c), the wafer is separated into individual circuits starting from the modified region layer.
Semiconductor chip manufacturing method.

[3] (a ′) a step of attaching an adhesive film for die bonding to a circuit surface of a semiconductor wafer having a circuit formed on the surface;
(B ′) a step of laminating an adhesive film for die bonding and a surface protective sheet,
(C ′) a step of grinding the back surface of the semiconductor wafer;
(D ′) a step of expanding the surface protection sheet to separate the die bonding adhesive film for each chip and obtaining a chip having the die bonding adhesive film on the circuit surface; and (e ′) the back side of the wafer Including a step of forming a modified region layer on the wafer by irradiating a laser beam from
The steps (a ′) to (d ′) are performed in this order, or the steps (b ′), (a ′), (c ′), and (d ′) are performed in this order.
The step (e ′) is performed after the step (c ′) and before the step (d ′). In the step (d ′), the wafer is divided into individual circuits starting from the modified region layer.
Semiconductor chip manufacturing method.

[4] (a ′) a step of attaching an adhesive film for die bonding to a circuit surface of a semiconductor wafer having a circuit formed on the surface;
(B ′) a step of laminating an adhesive film for die bonding and a surface protective sheet;
(C ′) a step of grinding the back surface of the semiconductor wafer;
(F ′) a step of attaching an adhesive sheet to the back surface of the semiconductor wafer;
(G ′) peeling the surface protective sheet and obtaining a semiconductor wafer having an adhesive film for die bonding;
(D ′) expanding the pressure-sensitive adhesive sheet to separate the die bonding adhesive film for each chip and obtaining a chip having the die bonding adhesive film on the circuit surface; and (e ′) from the wafer back side. Including a step of forming a modified region layer on a wafer by entering laser light and partitioning each circuit;
(A ′) step, (b ′) step, (c ′) step, (f ′) step, (g ′) step and (d ′) step are performed in this order, or (b ′) step, ( Steps a ′), (c ′), (f ′), (g ′) and (d ′) are performed in this order.
The step (e ′) is performed after the step (c ′) and before the step (d ′). In the step (d ′), the wafer is divided into individual circuits starting from the modified region layer.
Semiconductor chip manufacturing method.

According to the first method for producing a semiconductor chip of the present invention, contamination of the chip and the adhesive film can be prevented, and a semiconductor chip with an adhesive film can be obtained efficiently. In other words, an adhesive film is laminated on the circuit surface before forming a modified region inside the wafer by laser light to divide the wafer into chips (chips). By manufacturing the semiconductor chip with the adhesive film by separating the adhesive film by the process, the adhesive film is not exposed to the cutting water in an exposed state. Further, the manufacturing efficiency of the semiconductor chip with an adhesive film can be improved.
Further, according to the second method for manufacturing a semiconductor chip according to the present invention, contamination of the chip and the adhesive film can be prevented, and a semiconductor chip with an adhesive film can be obtained efficiently. In other words, prior to forming a modified region in the wafer by laser light and separating the wafer into chips (chips), an adhesive film is laminated on the circuit surface, and the adhesive film is separated by an expanding process under predetermined conditions. By manufacturing a semiconductor chip with an adhesive film after singulation, the adhesive film is not exposed to the cutting water in an exposed state, so that contamination of the chip and the adhesive film due to the cutting water can be prevented. The production efficiency of the semiconductor chip with film is improved.
Further, according to the semiconductor chip manufacturing method of the present invention, in a mounting technique in which the circuit surface side is mounted on a chip mounting substrate or another chip, a modified region layer is formed inside the wafer by laser light to divide the wafer. A continuous process incorporating a method of chipping (chiping) becomes possible. In addition, even in the case of high bump chips, by selecting the composition of the adhesive film appropriately, sufficient adhesion between the chip mounting substrate and other chips can be obtained, thus improving product quality. Is done. That is, according to the semiconductor chip manufacturing method of the present invention, a dicing method in which a modified region layer is formed inside the wafer by laser light to divide the wafer into chips (chips), and a mounting process employing flip chip bonding Thus, there is provided a semiconductor chip manufacturing method that can contribute to the simplification of the manufacturing process and the improvement of product quality.

One process of the manufacturing method of the 1st semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 1st semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 1st semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 1st semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 1st semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 1st semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 2nd semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 2nd semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 2nd semiconductor chip concerning this invention is shown.

Hereinafter, the present invention will be described more specifically with reference to the drawings, including the best mode.
The first semiconductor chip manufacturing method according to the present invention includes the following steps (a) to (e).
(A) A step of attaching an adhesive film for die bonding to a circuit surface of a semiconductor wafer having a circuit formed on the surface (see FIG. 1),
(B) a step of laminating an adhesive film for die bonding and a surface protective sheet (see FIG. 2);
(C) Grinding the back surface of the semiconductor wafer, dividing the wafer into individual circuits, and obtaining a group of divided chips (see FIG. 3);
(D) A step of expanding the surface protection sheet to separate the die bonding adhesive film for each chip and obtaining a chip having the die bonding adhesive film on the circuit surface (see FIG. 6), and (e) Including a step of forming a modified region layer on the wafer by injecting laser light from the back side of the wafer and partitioning each circuit;
Steps (a) to (d) are performed in this order, or steps (b), (a), (c), and (d) are performed in this order.
A method of manufacturing a semiconductor chip, wherein the step (e) is performed before the step (c), and the wafer is separated into individual circuits starting from the modified region layer in the step (c).

The first method for manufacturing a semiconductor chip according to the present invention may include the following steps (f) and (g) in addition to the steps (a) to (e). When the manufacturing method of the first semiconductor chip according to the present invention includes the steps (f) and (g), the steps (a), (b), (c), (f), (g ) Step and (d) step in this order, or (b) step, (a) step, (c) step, (f) step, (g) step and (d) step in this order, The step (e) is performed before the step (c).
(F) A step of attaching an adhesive sheet to the back surface of the group of divided chips (see FIG. 4).
(G) A step of peeling the surface protective sheet to obtain a group of chips having an adhesive film for die bonding (see FIG. 5).

  Hereinafter, each step will be described.

(A) Step In the step (a), the die bonding adhesive film 3 is attached to the circuit surface of the semiconductor wafer 1 having a circuit formed on the surface (see FIG. 1).

  In the semiconductor chip manufacturing method of the present invention, the die bonding adhesive film is disposed on the picked-up chip circuit surface and has a function as a sealing resin for the circuit surface. Used to fill the space and fix each other.

  As a resin used for such an adhesive film, in the process of sticking the adhesive film to the circuit surface of the wafer, it exhibits a certain degree of fluidity due to the pressing force at room temperature or when heated, and follows the unevenness of the circuit surface well, In addition, a resin that exhibits adhesiveness by heating is used. Examples of such resins include B-stage resins, adhesives, and thermoplastic resins.

  Examples of the B-stage resin used for the adhesive film include a layer made of a semi-cured epoxy resin.

  The adhesive used for the adhesive film refers to an adhesive that exhibits tackiness and fluidity at room temperature or in the range of 40 to 90 ° C., is cured by heating, becomes non-flowable, and adheres firmly to the adherend. . Examples of the adhesive include a mixture of a binder resin having a pressure-sensitive adhesive property at room temperature and a thermosetting resin.

  Examples of the binder resin having pressure-sensitive adhesive properties at room temperature include acrylic resins, polyester resins, polyvinyl ethers, urethane resins, and polyamides. As the thermosetting resin, for example, an epoxy resin, an acrylic resin, a polyimide resin, a phenol resin, a urea resin, a melamine resin, a resorcinol resin and the like are used, and preferably an epoxy resin. Moreover, in order to control peelability with the surface protection sheet mentioned later, you may mix | blend energy rays (ultraviolet rays etc.) curable resin, such as a urethane (meth) acrylate oligomer, with an adhesive agent. When energy beam curable resin is mix | blended, a surface protection sheet will closely_contact | adhere with an adhesive layer before energy beam irradiation, and will become easy to peel after energy beam irradiation.

  Adhesives composed of the components described above can be applied at room temperature, exhibit appropriate fluidity due to pressure bonding force at room temperature or when heated, and have both energy ray curability and heat curability. Therefore, it is possible to form a resin layer that does not have voids by following the unevenness of the circuit surface, and adheres to the surface protection sheet when grinding the back surface and contributes to fixing the wafer. It can be used as an adhesive that bonds the substrate. And after heat curing, it can give a cured product with high impact resistance, and also has an excellent balance between shear strength and peel strength, and can maintain sufficient adhesive properties even under severe heat and humidity conditions. .

  The thermoplastic resin used for the adhesive film is a resin that is plasticized by heating and exhibits adhesiveness. As such a thermoplastic resin, a chemically and physically heat resistant resin such as a polyimide resin is preferable because the reliability of the semiconductor device is improved.

The thickness of the adhesive film 3 comprising the above components is usually 3 to 100 μm, preferably 3 to 95 μm, and particularly preferably about 5 to 85 μm. When bumps 2 are formed on the wafer surface, the circuit surface is covered without generation of voids, and the bumps 2 penetrate the adhesive film 3, so that the average height (H _B ) of the bumps 2 and adhesion The ratio (H _B / T _A ) to the thickness (T _A ) of the film 3 is preferably 1.0 / 0.3 to 1.0 / 0.95, more preferably 1.0 / 0.5 to 1. 0.0 / 0.9, more preferably 1.0 / 0.6 to 1.0 / 0.85, particularly preferably 1.0 / 0.7 to 1.0 / 0.8. The average height (H _B ) of the bumps 2 is the height from the chip surface (circuit surface excluding the bumps) to the top of the bumps.

  If the bump height is too high with respect to the thickness of the adhesive film 3, there is a gap between the chip surface (circuit surface excluding the bump) and the chip mounting substrate, causing voids. On the other hand, if the adhesive film is too thick, the bumps do not penetrate the adhesive layer, causing a conduction failure.

  The adhesive film 3 can be used as a single layer as long as the operability is not impaired, but can also be used as an adhesive sheet laminated on the support film 4.

  Examples of the support film 4 include a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, a polyvinyl chloride film, a vinyl chloride copolymer film, a polyurethane film, an ethylene-vinyl acetate copolymer film, and an ionomer. A film such as a resin film, an ethylene / (meth) acrylic acid copolymer film, an ethylene / (meth) acrylic acid ester copolymer film, or a fluororesin film is used. These crosslinked films are also used. Furthermore, these laminated films may be sufficient. Furthermore, these films may be transparent films, colored films or opaque films. However, when the support film is too hard, there is a risk of crushing the tops of the bumps, so it is particularly preferable to use a film having moderate elasticity. In order to transfer the adhesive film on the support film to the circuit surface of the chip (wafer), the support film and the adhesive film are laminated so as to be peelable. For this reason, the surface tension of the surface in contact with the adhesive film of the support film is preferably 40 mN / m or less, more preferably 37 mN / m or less, and particularly preferably 35 mN / m or less. Such a film having a low surface tension can be obtained by appropriately selecting the material, and a release agent such as a silicone resin or an alkyd resin is applied to the surface of the support film to perform a release treatment. Can also be obtained.

  The thickness of such a support film is usually about 10 to 500 μm, preferably about 15 to 300 μm, and particularly preferably about 20 to 250 μm.

  The support film 4 may be peeled off from the adhesive film 3 before the step (b) is performed.

  Examples of the semiconductor wafer 1 include conventionally used semiconductor wafers such as a silicon semiconductor wafer and a gallium / arsenic semiconductor wafer, but are not limited thereto, and various semiconductor wafers can be used. Formation of a circuit on the wafer surface can be performed by various methods including conventionally used methods such as an etching method and a lift-off method. In the wafer circuit formation process, a predetermined circuit is formed. Further, it is desirable that conductive protrusions (bumps) 2 used for electrical connection with the chip mounting substrate are formed on the circuit surface. The height and diameter of the bump 2 vary depending on the design of the semiconductor device, but generally the height is about 10 to 100 μm and the diameter is about 20 to 100 μm. Such bumps 2 are often formed from a metal such as gold, copper, or solder. The shape of the bump 2 is not particularly limited, and examples thereof include a columnar shape and a spherical shape, and a shape in which a hemisphere is placed on the tip of the column as shown in FIG.

  A method for attaching the adhesive film 3 to the surface of the wafer 1 is not particularly limited, and is performed by a general-purpose method using a tape mounter or the like. When sticking an adhesive sheet on the surface of the wafer 1, the adhesive film 3 is transferred to the surface of the wafer 1 and the support film 4 is peeled off. Further, the adhesive film 3 and the support film 4 may be cut in advance in substantially the same shape as the semiconductor wafer 1, and after the film is attached to the wafer, the excess film may be cut and removed along the outer periphery of the wafer. Good.

(B) Step In the step (b), the die-bonding adhesive film 3 and the surface protective sheet 7 are laminated (see FIG. 2).
The surface protective sheet 7 is attached to hold the wafer 1 and protect the circuit surface in a back surface grinding step (step (c)) described later.

  As the surface protective sheet 7, various pressure-sensitive adhesive sheets and the like used for this type of application are used without particular limitation.

  In addition, when performing the (g) process mentioned later, since peeling is performed in the interface of the adhesive film 3 and the surface protection sheet 7, the adhesive film 3 and the surface protection sheet 7 are laminated | stacked so that peeling is possible.

  When the adhesive film 3 has pressure sensitive adhesiveness, the surface protection sheet 7 does not necessarily need to have adhesiveness, and may be a resin film. As such a resin film, a resin film such as a polyethylene terephthalate film, a polyethylene naphthalate film, a polybutylene terephthalate film, a polystyrene film, a polycarbonate film, or a polyimide film is used in addition to those exemplified as the support film 4 described above. It is done. These crosslinked films are also used. Furthermore, these laminated films may be sufficient.

  When the adhesive film 3 does not have pressure-sensitive adhesiveness, the surface protective sheet 7 may itself be a resin film having a tack, and has a releasable pressure-sensitive adhesive layer on the surface of the resin film. A weak adhesive sheet may be used.

  In addition, when the adhesive film 3 does not have energy ray curability, an energy ray curable pressure-sensitive adhesive sheet can be used as the surface protective sheet 7. The pressure-sensitive adhesive layer of the energy ray-curable pressure-sensitive adhesive sheet is cured by energy rays such as ultraviolet rays and has a property of disappearing the adhesive force. Therefore, after sticking the energy ray-curable pressure-sensitive adhesive sheet on the surface of the adhesive film 3 and performing the back surface grinding step, the adhesive force is lost by irradiating the pressure-sensitive adhesive layer with energy rays, and the adhesive film 3 and the surface protective sheet. Separation at the interface with 7 can be easily performed. Moreover, you may use the adhesive sheet which irradiated the energy beam previously to the adhesive layer of the adhesive sheet which provided the energy-beam curable adhesive as an adhesive layer, and reduced adhesiveness.

  When the steps (f) and (g) described later are performed, the shape of the surface protective sheet 7 is not particularly limited, and is substantially equal to the shape of the wafer 1 (substantially the same shape) or more than the wafer 1. A large shape may be used. In this case, the adhesive film 3 can be separated into pieces by expanding the adhesive sheet attached in the step (f).

On the other hand, when the steps (f) and (g) are not performed, it is preferable that the shape of the surface protection sheet 7 is slightly larger than that of the wafer 1. In this case, the adhesive film 3 can be separated into pieces by expanding the surface protection sheet 7. That is, when the surface protective sheet 7 has such a shape, it is possible to affix the surplus portion of the surface protective sheet 7 to a jig such as a ring frame. Therefore, the surface protection sheet 7 can be expanded.
The surface protection sheet 7 having the shape as described above may be cut in advance to be approximately the same shape as the wafer 1 or slightly larger than the wafer 1 and laminated with the die bonding adhesive film 3. After pasting the surface protective sheet 7 through the bonding adhesive film 3, the excess sheet may be cut and removed along the outer periphery of the wafer 1 or a shape slightly larger than the wafer 1.

  Moreover, the thickness of the surface protection sheet 7 is 20-1000 micrometers normally, Preferably it is 50-250 micrometers. When the surface protection sheet 7 has an adhesive layer, among the above thicknesses, the thickness of the adhesive layer is 5 to 500 μm, preferably 10 to 100 μm. In addition, the method of laminating | stacking an adhesive film and a surface protection sheet is not specifically limited, It carries out by the general purpose method using a tape mounter etc. similarly to the (a) process.

  Further, when the step (b) is performed before the step (a), a die bonding adhesive film and a surface protective sheet are laminated to obtain a laminated sheet, and the die bonding adhesive film of the laminated sheet is obtained. Affixed to the circuit surface of the semiconductor wafer.

  The production method of the laminated sheet is not particularly limited, and the adhesive film on the support film may be transferred to the surface protective sheet, or the mixture constituting the adhesive film is directly applied to the surface protective sheet so as to have a predetermined film thickness. Then, an adhesive film may be formed. Moreover, the method of sticking the adhesive film of a lamination sheet on the circuit surface of a semiconductor wafer is not specifically limited, It carries out by the general purpose method using a tape mounter etc. similarly to the (a) process.

(C) Step (c) In the step (c), the back surface of the semiconductor wafer 1 is ground, and the wafer 1 is separated into pieces for each circuit to obtain a group of divided chips 100 (see FIG. 3). Before the step (c), a step (e) described later is performed, and a modified region layer partitioned for each circuit is formed in the vicinity of the surface of the wafer.

  The back surface grinding of the wafer 1 is performed by a method using a grinder or the like. By the back surface grinding, the thickness of the wafer 1 is reduced, and the stress of the back surface grinding propagates to the modified region layer formed in the vicinity of the surface of the wafer 1, so that the wafer 1 is transferred to each chip 10 from the modified region layer. And divided. The thickness of each chip 10 divided by the back surface grinding of the wafer 1 is about 15 to 400 μm.

  Subsequent to the step (c), the following step (f) and step (g) may be performed.

(F) Step (f) In the step (f), the adhesive sheet 13 is attached to the back surface of the group of divided chips 100 (see FIG. 4). The pressure-sensitive adhesive sheet 13 is obtained by forming the pressure-sensitive adhesive layer 11 on the substrate 12.

  The pressure-sensitive adhesive layer 11 can be formed of various conventionally known pressure-sensitive adhesives. Such an adhesive is not limited at all, but an adhesive such as rubber-based, acrylic-based, silicone-based, or polyvinyl ether is used. In addition, an energy ray curable adhesive, a heat-foaming adhesive, or a water swelling adhesive can be used. As the energy ray curable (ultraviolet ray curable, electron beam curable) pressure-sensitive adhesive, it is particularly preferable to use an ultraviolet curable pressure-sensitive adhesive.

The adhesive layer 11 is affixed to the ring frame 5 at the outer periphery when a chip to be described later is manufactured (see FIG. 4).
The adhesive strength of the adhesive sheet (adhesive strength to the SUS plate after being applied and heated at 130 ° C. for 2 hours) at the portion (the outer peripheral portion of the adhesive sheet) to be attached to the ring frame is preferably 15 N / 25 mm or less. More preferably, it is 10 N / 25 mm or less, Most preferably, it is 5 N / 25 mm or less. By making the adhesive force in the outer peripheral part of the pressure-sensitive adhesive sheet within the above range, the adhesiveness to the ring frame is excellent, and the adhesive residue on the ring frame can be prevented.

  Although the thickness of the adhesive layer 11 is not specifically limited, Preferably it is 1-100 micrometers, More preferably, it is 2-80 micrometers, Most preferably, it is 3-50 micrometers.

  Although it does not specifically limit as the base material 12, For example, polyethylene films, such as a low density polyethylene (LDPE) film, a linear low density polyethylene (LLDPE) film, a high density polyethylene (HDPE) film, a polypropylene film, a polybutene film, Polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polybutylene terephthalate film, polyurethane film, polyimide film, ethylene-vinyl acetate copolymer film, ionomer resin film, ethylene (Meth) acrylic acid copolymer film, ethylene / (meth) acrylic acid ester copolymer film, polystyrene film, polycarbonate film Arm, fluororesin film, and a film composed of the hydrogenated product or modified product, etc. are used. These crosslinked films and copolymer films are also used. The above-mentioned base material may be one kind alone, or may be a composite film in which two or more kinds are combined.

  Moreover, when using an ultraviolet-ray as an energy ray irradiated in order to harden the adhesive layer 11, the base material which has a transmittance | permeability with respect to an ultraviolet-ray is preferable. In addition, when using an electron beam as an energy ray, the base material does not need to be light-transmitting. It is preferable that the base material is colored because the operator can visually recognize that the pressure-sensitive adhesive sheet is attached to the adherend (a group of chips 100). When visibility of the adherend surface is required, the substrate is preferably transparent.

  Moreover, in order to improve adhesiveness with an adhesive layer, you may give a corona treatment or a primer layer in the upper surface of the base material 12, ie, the base material surface in the side in which the adhesive layer 11 is provided. Moreover, you may apply various coating films on the opposite surface to an adhesive layer. The pressure-sensitive adhesive sheet 13 in the present invention is manufactured by providing the pressure-sensitive adhesive layer 11 on one side of the substrate 12. The thickness of the base material 12 is preferably 20 to 200 μm, more preferably 25 to 110 μm, and particularly preferably 50 to 90 μm. When the thickness of the base material 12 is large, the force against the bending of the base material 12 becomes large, and the peeling angle at the time of pick-up is difficult to increase. For this reason, the force required for pick-up increases and the pick-up property may be inferior. When the thickness of the base material 12 is small, film formation may be difficult depending on the material.

  The method of providing the pressure-sensitive adhesive layer on the surface of the base material comprises forming a pressure-sensitive adhesive layer by applying the pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer to a predetermined thickness on the release sheet, The surface of the substrate may be transferred, or the pressure-sensitive adhesive composition may be directly applied to the surface of the substrate to form a pressure-sensitive adhesive layer. As a peeling sheet, the same thing as the support film mentioned above can be used. In addition, the method of sticking the adhesive sheet 13 is not specifically limited, It carries out by the general purpose method using a tape mounter etc. similarly to the (a) process.

(G) In the step (g), the surface protective sheet 7 is peeled off to obtain a group of chips 100 having the die bonding adhesive film 3 (see FIG. 5). The method for peeling the surface protective sheet 7 is not particularly limited.

(D) Step (d) In the step (d), the surface protective sheet 7 or the adhesive sheet 13 is expanded to separate the die bonding adhesive film 3 for each chip, and the die bonding adhesive film 3 is provided on the circuit surface. Chip 10 is obtained. FIG. 6 shows an expanded view of the adhesive sheet 13. (C) When performing said (f) process and (g) process following a process, an adhesive sheet is expanded in the subsequent (d) process. Moreover, when performing (d) process following (c) process, a surface protection sheet is expanded in (d) process.
By maintaining the die-bonding adhesive film 3 at 15 ° C. or less, more preferably at −10 to 10 ° C. at the time of expanding, the stress (expanding force) generated by the expanding easily propagates to the adhesive film between the chips. Thus, the adhesive film is deformed, and it becomes easy to divide the adhesive film into individual chips. The adhesive film that is in close contact with the chip 10 is not stretched because the deformation is constrained by the chip, but the deformation of the adhesive film located between the chips is not constrained, and is thus cut into substantially the same shape as the chip by stretching. The expansion is preferably performed at a speed of 1 to 300 mm / second.

Step (e) Step (e) is performed before step (c). In step (e), a laser beam is incident from the back side of the wafer, and a modified region layer partitioned for each circuit is formed in the vicinity of the wafer surface. To form. Laser light is emitted from a laser light source. The laser light source is a device that generates light having a uniform wavelength and phase, and the types of laser light include Nd-YAG laser, Nd-YVO laser, Nd-YLF laser, and titanium sapphire laser that generate pulsed laser light. The thing which causes multiphoton absorption can be mentioned. The wavelength of the laser light is preferably 800 to 1100 nm, and more preferably 1064 nm.

  The laser beam is irradiated to the inside of the wafer, and a modified region layer is formed inside the wafer along a planned cutting line divided for each circuit. The number of times the laser beam scans one scheduled cutting line may be one time or multiple times. Preferably, the irradiation position of the laser beam and the position of the planned cutting line between the circuits are monitored, and the laser beam is irradiated while aligning the laser beam. By setting the condensing point of the laser light at a portion close to the surface of the wafer, the modified region layer can be formed in the vicinity of the surface.

  A semiconductor chip with an adhesive film can be obtained by the steps (a) to (g) as described above.

The second method for manufacturing a semiconductor chip according to the present invention includes the following steps (a ′) to (e ′).
(A ′) a step of attaching an adhesive film for die bonding to a circuit surface of a semiconductor wafer having a circuit formed on the surface (see FIG. 1);
(B ′) a step of laminating an adhesive film for die bonding and a surface protective sheet (see FIG. 2);
(C ′) grinding the back surface of the semiconductor wafer (see FIG. 7);
(D ′) The step of expanding the surface protective sheet to separate the die bonding adhesive film for each chip and obtaining a chip having the die bonding adhesive film on the circuit surface (see FIG. 6); ') Including a step of forming a modified region layer on the wafer that is irradiated with laser light from the back side of the wafer and partitioned for each circuit;
The steps (a ′) to (d ′) are performed in this order, or the steps (b ′), (a ′), (c ′), and (d ′) are performed in this order.
A semiconductor in which the step (e ′) is performed after the step (c ′) and before the step (d ′), and in step (d ′), the wafer is separated into individual circuits starting from the modified region layer. Chip manufacturing method.

The second method for manufacturing a semiconductor chip according to the present invention may include the following steps (f ′) and (g ′) in addition to the steps (a ′) to (e ′). When the second semiconductor chip manufacturing method according to the present invention includes the steps (f ′) and (g ′), the steps (a ′), (b ′), (c ′), (f ') Step, (g') step and (d ') step are performed in this order, or (b') step, (a ') step, (c') step, (f ') step, (g' ) Step and (d ′) step are performed in this order, and step (e ′) is performed after step (c ′) and before step (d ′).
(F ′) A step of attaching an adhesive sheet to the back surface of the semiconductor wafer (see FIG. 8).
(G ′) A step of peeling the surface protective sheet and obtaining a semiconductor wafer having an adhesive film for die bonding (see FIG. 9).

  Hereinafter, each step will be described. Note that the steps (a ′) and (b ′) are the same as the steps (a) and (b) in the above-described first semiconductor chip manufacturing method, and thus description thereof is omitted.

(C ′) Step (c ′) In the step (c ′), the back surface of the semiconductor wafer is ground (see FIG. 7). The back surface grinding of the wafer 1 is performed by a method using a grinder or the like. By the backside grinding, the thickness of the wafer 1 is reduced, and the thickness of the wafer 1 is about 15 to 400 μm.

  Similarly to the above-described first semiconductor chip manufacturing method, the following step (f ′) and step (g ′) may be performed following the step (c ′).

(F ′) Step (f ′) In the step (f ′), the adhesive sheet 13 is attached to the back surface of the semiconductor wafer 1 (see FIG. 8). The pressure-sensitive adhesive sheet 13 is the same as the pressure-sensitive adhesive sheet 13 in step (f) described above. Moreover, the method of sticking the adhesive sheet 13 is not specifically limited, It is performed by the general purpose method using a tape mounter etc. similarly to the (a) process.

(G ′) In the step (g ′), the surface protective sheet 7 is peeled off to obtain the semiconductor wafer 1 having the die-bonding adhesive film 3 (see FIG. 9). The method for peeling the surface protective sheet 7 is not particularly limited.

(D ′) Step (d ′) In the step (d ′), the surface protective sheet 7 or the adhesive sheet 13 is expanded, so that the die bonding adhesive film 3 is separated into chips, and the die bonding adhesive film 3 is formed on the circuit surface. A chip 10 having the following is obtained (see FIG. 6). (C ') Following the process, when performing said (f') process and (g ') process, an adhesive sheet is expanded in the subsequent (d') process. Further, when the step (d ′) is performed subsequent to the step (c ′), the surface protective sheet is expanded in the step (d ′). Incidentally, after the step (c ′) and before the step (d ′), a step (e ′) described later is performed, and a modified region layer partitioned for each circuit is formed on the wafer.

When the semiconductor wafer 1 is not separated at the time of performing the step (f ′), the surface protective sheet 7 or the adhesive sheet 13 is expanded, so that the stress (expanding force) generated by the expansion is modified inside the wafer. The wafer 1 and the die bonding adhesive film 3 are separated into pieces for each circuit.
Prior to the step (d ′), the semiconductor wafer 1 may be divided into chips by means such as applying an impact to the semiconductor wafer 1 and cleaving using the modified region as a trigger. In this case, the adhesive film 3 for die bonding is separated into pieces for each circuit by the expansion of the surface protective sheet 7 or the adhesive sheet 13.
During the expanding process, the adhesive film 3 for die bonding is preferably maintained at 15 ° C. or lower, more preferably −10 to 10 ° C., so that the expanding force easily propagates to the adhesive film between the chips. It deforms and it becomes easy to divide the adhesive film into individual chips. The expansion is preferably performed at a speed of 1 to 300 mm / second.

Step (e ′) Step (e ′) is performed after step (c ′) and before step (d ′). In step (e ′), laser light is incident from the back side of the wafer, A modified region layer is formed on the wafer. In step (c ′), the wafer is ground and the thickness of the wafer is sufficiently thin. Therefore, in step (e ′), it is not necessary to set the condensing point of the laser beam near the surface of the wafer. . Since the conditions other than the condensing point of the laser beam are the same as those in the step (e), description thereof is omitted.

  By the steps (a ′) to (g ′) as described above, a semiconductor chip with an adhesive film can be obtained.

  The semiconductor chip with an adhesive film obtained by the first and second semiconductor chip manufacturing methods according to the present invention described above is then picked up. The pick-up of the chip with the adhesive film may be performed directly from the surface protective sheet 7 or the pressure-sensitive adhesive sheet 13, and after the chip with the adhesive film is transferred from the surface protective sheet 7 or the pressure-sensitive adhesive sheet 13 to another pressure-sensitive adhesive sheet, You may pick up the chip | tip with an adhesive film from an adhesive sheet. As such another pressure-sensitive adhesive sheet, a pressure-sensitive adhesive sheet having appropriate pressure-sensitive adhesiveness and removability is preferable, and in particular, an ultraviolet curable pressure-sensitive adhesive sheet that has been conventionally used as a dicing sheet is preferably used.

  Picking up the chip with the adhesive film can be performed by a known method using a suction collet or the like. Moreover, you may push up the chip | tip with an adhesive film from the back surface side of the adhesive sheet 13 or another adhesive sheet with a push-up pin as needed.

  The picked-up chip with adhesive film may proceed to the next process as it is or through a chip reversal process, or once stored on a transfer tape or in a storage container and used in the next process as necessary. Good.

  And the chip | tip with an adhesive film is mounted in predetermined positions, such as an electrode part of a board | substrate for chip | tip mounting, through the adhesive film 3. FIG. Specifically, a chip having the adhesive film 3 on the circuit surface side is placed on a predetermined chip mounting substrate by a face-down method. In a chip having bumps, the bumps are placed so as to face corresponding terminal portions on the chip mounting substrate.

  Thereafter, the die-bonded chip with the adhesive film is heated to fix the chip to the chip mounting substrate. As described above, the adhesive film 3 is formed from a B-stage resin, an adhesive, a thermoplastic resin, or the like that exhibits adhesiveness by heating. By heating these under predetermined conditions, if it is a B-stage resin, the adhesiveness is manifested by curing of the resin, and if it is an adhesive, the adhesiveness is exhibited by curing of the thermosetting resin contained therein. To express. Moreover, if it is a thermoplastic resin, adhesive force will be expressed by heat sealing.

  After die bonding (flip chip bonding) in this way, a semiconductor device can be obtained through a normal process such as resin sealing, if necessary.

  As mentioned above, although the manufacturing method of the semiconductor chip of this invention was demonstrated along drawing, this invention is not limited to the manufacturing method of the semiconductor chip of the said structure, It applies to the manufacturing method of the semiconductor chip which has various structures. it can.

1: Semiconductor wafer 2: Bump 3: Adhesive film 4: Support film 5: Ring frame 7: Surface protection sheet 10: Semiconductor chip 13: Adhesive sheet

Claims (4)

(A) a step of attaching an adhesive film for die bonding to a circuit surface of a semiconductor wafer having a circuit formed on the surface;
(B) a step of laminating an adhesive film for die bonding and a surface protective sheet;
(C) grinding the back surface of the semiconductor wafer, separating the wafer into individual circuits, and obtaining a group of divided chips;
(D) a step of expanding the surface protection sheet to separate the die bonding adhesive film for each chip and obtaining a chip having the die bonding adhesive film on the circuit surface; and (e) a laser from the wafer back side. A step of forming a modified region layer on the wafer by entering light and partitioning each circuit;
Steps (a) to (d) are performed in this order, or steps (b), (a), (c), and (d) are performed in this order.
The step (e) is performed before the step (c), and in the step (c), the wafer is separated into individual circuits starting from the modified region layer.
Semiconductor chip manufacturing method. (A) a step of attaching an adhesive film for die bonding to a circuit surface of a semiconductor wafer having a circuit formed on the surface;
(B) a step of laminating an adhesive film for die bonding and a surface protective sheet;
(C) grinding the back surface of the semiconductor wafer, separating the wafer into individual circuits, and obtaining a group of divided chips;
(F) A process of attaching an adhesive sheet to the back surface of the group of divided chips,
(G) peeling the surface protective sheet and obtaining a group of chips having an adhesive film for die bonding;
(D) expanding the pressure-sensitive adhesive sheet to separate the die bonding adhesive film for each chip and obtaining a chip having the die bonding adhesive film on the circuit surface; and (e) laser light from the wafer back side. And forming a modified region layer that divides each circuit into a wafer,
Step (a), Step (b), Step (c), Step (f), Step (g) and Step (d) are performed in this order, or Step (b), Step (a), Step (c) Step, (f) step, (g) step and (d) step are performed in this order,
The step (e) is performed before the step (c), and in the step (c), the wafer is separated into individual circuits starting from the modified region layer.
Semiconductor chip manufacturing method. (A ′) a step of attaching an adhesive film for die bonding to a circuit surface of a semiconductor wafer having a circuit formed on the surface;
(B ′) a step of laminating an adhesive film for die bonding and a surface protective sheet,
(C ′) a step of grinding the back surface of the semiconductor wafer;
(D ′) a step of expanding the surface protection sheet to separate the die bonding adhesive film for each chip and obtaining a chip having the die bonding adhesive film on the circuit surface; and (e ′) the back side of the wafer Including a step of forming a modified region layer on the wafer by irradiating a laser beam from
The steps (a ′) to (d ′) are performed in this order, or the steps (b ′), (a ′), (c ′), and (d ′) are performed in this order.
The step (e ′) is performed after the step (c ′) and before the step (d ′). In the step (d ′), the wafer is divided into individual circuits starting from the modified region layer.
Semiconductor chip manufacturing method. (A ′) a step of attaching an adhesive film for die bonding to a circuit surface of a semiconductor wafer having a circuit formed on the surface;
(B ′) a step of laminating an adhesive film for die bonding and a surface protective sheet;
(C ′) a step of grinding the back surface of the semiconductor wafer;
(F ′) a step of attaching an adhesive sheet to the back surface of the semiconductor wafer;
(G ′) peeling the surface protective sheet and obtaining a semiconductor wafer having an adhesive film for die bonding;
(D ′) expanding the pressure-sensitive adhesive sheet to separate the die bonding adhesive film for each chip and obtaining a chip having the die bonding adhesive film on the circuit surface; and (e ′) from the wafer back side. Including a step of forming a modified region layer on a wafer by entering laser light and partitioning each circuit;
(A ′) step, (b ′) step, (c ′) step, (f ′) step, (g ′) step and (d ′) step are performed in this order, or (b ′) step, ( Steps a ′), (c ′), (f ′), (g ′) and (d ′) are performed in this order.
The step (e ′) is performed after the step (c ′) and before the step (d ′). In the step (d ′), the wafer is divided into individual circuits starting from the modified region layer.
Semiconductor chip manufacturing method.

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