JP2014030045A - Substrate peripheral processing device, and substrate peripheral processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate peripheral processing device and a substrate peripheral processing method that accurately control a processing width of a peripheral edge part of a substrate surface.SOLUTION: A device includes: a spin chuck 1 which holds and rotates a wafer W; and a shield plate 10 which is arranged above the spin chuck 1. The shield plate 10 has an annular member 32 at a position opposed to a peripheral edge part of an upper surface of the wafer W. The annular member 32 has a wafer opposite surface 45 opposed to the peripheral edge part of the upper surface of the wafer W and a gas flow passage 49 which links an internal space to an external space. Further, gas supply means 18, 30 are provided to supply a gas into the internal space of the annular member 32. When an etchant is supplied from a center axis nozzle 5 toward the center of the lower surface of the wafer W, the etchant flows around a peripheral end face of the wafer W and reaches its upper surface to form a liquid film coming into contact with the wafer opposite surface 45. The liquid film never extends inward from nearby an inner peripheral edge of the annular member 32.

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a peripheral portion of a substrate. The substrates to be processed include various substrates such as semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma display panels, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomask substrates. included.

  In the manufacturing process of a semiconductor device, a metal thin film such as a copper thin film is formed over the entire surface of a semiconductor wafer (hereinafter simply referred to as “wafer”) and the peripheral end surface (in some cases, the back surface). In some cases, unnecessary portions are removed by etching. For example, since the copper thin film for wiring formation only needs to be formed in the element formation region on the front surface of the wafer, the peripheral portion of the front surface of the wafer (for example, a portion having a width of about 5 mm from the peripheral edge of the wafer), the back surface and The copper thin film formed on the peripheral end surface is not necessary. In addition, copper or copper ions on the peripheral edge, back surface, and peripheral edge surface contaminate the hand of the substrate transfer robot provided in the substrate processing apparatus, and further, this contamination is transferred to another substrate held by the hand. Causes the problem of metastasis.

For the same reason, there is a process for removing metal contaminants (including metal ions) on the surface by thinly etching a film (such as an oxide film or a nitride film) other than the metal film formed on the periphery of the substrate. Sometimes done.
A substrate peripheral edge processing apparatus for selectively etching a thin film at the peripheral edge and peripheral edge of a wafer includes, for example, a spin chuck that rotates while holding the wafer horizontally, and a space on the wafer above the spin chuck. A blocking plate for limiting, and an etchant supply nozzle for supplying an etchant to the lower surface of the wafer. The etching solution supplied to the lower surface of the wafer travels outward in the rotational radial direction along the lower surface of the wafer by centrifugal force, travels to the upper surface through the end surface of the wafer, and the peripheral portion of the upper surface of the wafer is unnecessary. Etch things. At this time, the shielding plate is disposed close to the upper surface of the wafer, and an inert gas such as nitrogen gas is supplied between the shielding plate and the wafer.

By appropriately adjusting the flow rate of the inert gas and the rotation speed of the spin chuck, the amount of the etching solution can be adjusted, so that a region having a predetermined width (for example, 1 to 7 mm) on the peripheral edge of the upper surface of the wafer can be selectively selected. An etching process can be performed (so-called bevel etching process).
While the wafer is held and rotated by the spin chuck, an etching solution is supplied from the lower surface of the wafer, so that unnecessary materials on the peripheral edge of the upper surface of the wafer are removed by etching. On the other hand, after the pure water rinsing process is performed, the spin chuck is rotated at a high speed, and a drying process is performed to shake off water droplets on the upper and lower surfaces of the wafer.

JP 2000-343054 A Japanese Patent Application Laid-Open No. 07-122529

However, in the configuration as described above, it is impossible to accurately control the amount of the etching solution circulated, so that the etching width accuracy is not so good, and the etching width becomes uneven at each peripheral portion of the wafer. is there.
That is, when the distance between the upper surface of the wafer and the shielding plate is long, the etching solution does not contact the shielding plate, so that the amount of wraparound to the wafer upper surface is small and the wraparound amount cannot be accurately controlled. Further, in this case, since the communication space between the upper surface of the wafer and the shielding plate and the external space is large, the atmosphere of the etchant from the outside, the scattered droplets, mist or vapor (so-called mist) There is also a problem that the device enters the device formation region at the center of the wafer surface.

On the other hand, when the distance between the upper surface of the wafer and the shielding plate is short, the etching solution that has entered the upper surface of the wafer comes into contact with the lower surface (plane) of the shielding plate. It cannot be done accurately.
As described above, in any case, the amount of the etching solution cannot be accurately controlled.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate peripheral processing apparatus and a substrate peripheral processing method that can accurately control the processing width of the peripheral portion of the substrate surface.

  The invention according to claim 1 is a substrate peripheral processing apparatus for supplying an etching solution to the surface of the peripheral portion of the substrate and etching away unnecessary substances on the surface of the peripheral portion, wherein the etching liquid is applied to the peripheral portion of the substrate. The etching solution supply means for supplying the substrate and the surface of the peripheral portion of the substrate are arranged so as to be close to each other with a predetermined gap that can contact the liquid film of the etching solution formed on the surface of the peripheral portion. An annular member having an inner peripheral edge on or on the outer peripheral edge of the substrate and defining a treatment width by the etching solution on the surface of the peripheral edge of the substrate, and a space inside the annular member is substantially closed. And a gas supply means for supplying gas to the space inside the annular member.

  The invention according to claim 2 is a substrate peripheral processing method for supplying an etching solution to the surface of the peripheral portion of the substrate and etching away unnecessary substances on the surface of the peripheral portion, and etching the surface of the peripheral portion of the substrate. An etching solution supply step for supplying a solution and an annular member having an inner periphery disposed on or inside the outer periphery of the substrate is in contact with the etching solution liquid film formed on the surface of the periphery of the substrate. A step of defining a treatment width by the etching solution on the surface of the peripheral edge of the substrate by arranging the gap close to the surface of the peripheral edge of the substrate with a predetermined gap, and a space inside the annular member And a gas supply step for supplying a gas to the substrate peripheral edge processing method.

  The invention described in claim 3 is characterized in that the etching solution supplying step includes a step of holding the substrate in a stationary state and depositing the etching solution on the peripheral surface of the substrate. This is a substrate peripheral edge processing method.

  The invention described in claim 4 further includes a substrate rotating step of rotating the substrate, and the etching solution supplying step supplies the etching solution to the surface of the peripheral portion of the rotating substrate in parallel with the substrate rotating step. The substrate peripheral edge processing method according to claim 2, further comprising a step of:

According to the invention which concerns on Claims 1 thru | or 4, the substrate peripheral processing apparatus and the substrate peripheral processing method which can control correctly the processing width of the peripheral part of the substrate surface can be provided. In particular, the liquid film or droplets of the etching solution can be more reliably prevented from reaching the inner region of the substrate, and a good etching process can be performed on the entire periphery of the peripheral portion of the substrate.

It is sectional drawing for demonstrating the structure of the substrate periphery processing apparatus which concerns on 1st Embodiment of this invention. It is an expanded sectional view for demonstrating the structure of the vicinity of the annular member which controls the liquid film of an etching liquid in the peripheral part of the surface of a wafer. It is sectional drawing for demonstrating the structure of the substrate periphery processing apparatus which concerns on 2nd Embodiment of this invention. It is sectional drawing for demonstrating the structure of the substrate periphery processing apparatus which concerns on 3rd Embodiment of this invention. It is a partial expanded sectional view for explaining various forms of an annular member. It is sectional drawing which shows the modification regarding the shape of the inner wall face of an annular member. It is sectional drawing which shows the modification of the shape of the wafer opposing surface of an annular member. It is sectional drawing which shows the modification of the guide edge part provided in the wafer opposing surface of the annular member. It is an illustration sectional view showing an example for supplying etching liquid to the peripheral part of the upper surface of a wafer.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view for explaining the configuration of a substrate peripheral edge processing apparatus according to an embodiment of the present invention. This substrate peripheral processing apparatus removes a thin film formed on a peripheral portion and an end surface of a surface of a semiconductor wafer (hereinafter simply referred to as “wafer”) W (upper surface in this embodiment) which is a substantially circular substrate. It is something that can be done. This substrate processing peripheral device holds a wafer W substantially horizontally with its back surface facing downward, and also rotates a spin chuck 1 that rotates about a vertical axis passing through the substantially center of the held wafer W (not shown). ).

  The spin chuck 1 is coupled to a rotary shaft 3 that is a drive shaft of a rotary drive mechanism 2 including a motor or the like and is rotated. The rotating shaft 3 is a hollow shaft, and a processing liquid supply pipe 4 capable of supplying pure water or an etching liquid is inserted into the rotating shaft 3. A central axis nozzle (fixed nozzle) 5 having a discharge port 5 a is coupled to the upper end of the processing liquid supply pipe 4 at a position close to the center of the lower surface of the wafer W held by the spin chuck 1. Pure water or an etching solution can be supplied from the discharge port 5 a of the nozzle 5 toward the center of the lower surface of the wafer W.

Pure water or etching liquid is supplied to the processing liquid supply pipe 4 at a required timing via a pure water supply valve 6 connected to the pure water supply source or an etching liquid supply valve 7 connected to the etching liquid supply source. It has come to be.
As the etchant, a type corresponding to the type of thin film to be removed from the peripheral surface of the wafer W is applied. For example, when removing a metal film such as a copper thin film from the peripheral surface of the wafer W, for example, a mixed solution of hydrochloric acid and hydrogen peroxide solution, a mixed solution of hydrofluoric acid and hydrogen peroxide solution, or nitric acid is etched. Used as a liquid. Further, when removing the polysilicon film, the amorphous silicon film or the silicon oxide film from the wafer W, for example, a mixed solution of hydrofluoric acid and nitric acid is used as an etching solution. Further, when removing the oxide film or nitride film on the wafer W, for example, hydrofluoric acid such as DHF (dilute hydrofluoric acid) or 50% hydrofluoric acid is used as an etching solution.

  A space between the processing liquid supply pipe 4 and the rotating shaft 3 is a process gas supply path 8, and the process gas supply path 8 communicates with a space below the wafer W around the central axis nozzle 5. doing. A process gas (for example, an inert gas such as nitrogen) from a process gas supply source is supplied to the process gas supply path 8 via a process gas supply valve 9.

  Above the spin chuck 1, a disc-shaped blocking plate 10 that faces the wafer W held by the spin chuck 1 is provided horizontally. The blocking plate 10 is formed in a size that can cover almost the entire upper surface of the wafer W, and can be lifted and lowered with respect to the spin chuck 1 by the blocking plate lifting / lowering drive mechanism 11. Further, the shielding plate 10 can be rotated on the same rotational axis as the rotational axis of the spin chuck 1 by a motor 12 as a shielding plate rotation drive mechanism.

In this embodiment, the motor 12 is configured by a hollow motor, and the blocking plate 10 is coupled to the lower end of the rotating shaft 13 that is rotationally driven by the motor 12.
The rotating shaft 13 is a hollow shaft, and a central shaft nozzle 14 is inserted through the rotating shaft 13. Pure water from a pure water supply source can be supplied to the central axis nozzle 14 via a pure water supply valve 15, and a chemical solution from a chemical (for example, etchant) liquid supply source can be supplied via a chemical supply valve 16. Can be supplied. The lower end of the central axis nozzle 14 enters a through hole 17 formed in the center of the blocking plate 10 and faces the center (rotation center) of the upper surface of the wafer W held by the spin chuck 1.

  A gap between the rotary shaft 13 that is a hollow shaft and the central shaft nozzle 14 forms a process gas supply path 18, and this process gas supply path 18 passes from the through hole 17 of the blocking plate 10 to the wafer W. It faces the center of the top surface. A process gas (inert gas such as nitrogen gas) from a process gas supply source can be supplied to the process gas supply path 18 via a process gas supply valve 19.

  In the housing 20 that houses the motor 12, a bearing 21 that supports the rotating shaft 13 and a process gas supply mechanism 22 that supplies process gas to the internal space of the blocking plate 10 are provided. The process gas supply mechanism 22 includes a cylindrical labyrinth member 23 having a labyrinth surface opposed to the outer peripheral surface of the rotating shaft 13 on the inner peripheral surface, and a process gas coupled to a process gas supply port 23 a formed in the labyrinth member 23. And an introduction port 24.

On the labyrinth surface of the labyrinth member 23, an annular groove 23b is formed at a position corresponding to the process gas supply port 23a. The seal gas supplied from the seal gas inlet 25 is supplied to the upper and lower labyrinth portions of the annular groove 23b.
A process gas (inert gas such as nitrogen gas) is supplied from a process gas supply source to the process gas introduction port 24 via a process gas supply valve 26, and a seal gas supply source is supplied to the seal gas introduction port 25. Then, a seal gas (dry air or the like) is supplied through the seal gas supply valve 27.

The internal atmosphere near the lower end of the labyrinth member 23 is sucked and exhausted from the suction port 28 so that the process gas or the seal gas does not leak into the processing chamber.
The rotary shaft 13 has a double shaft structure of an inner shaft 13A and an outer shaft 13B surrounding the inner shaft 13A, and the lower end of the outer shaft 13B is supported by an outward flange 29 formed near the lower end of the inner shaft 13A. Has been. The outer shaft 13B is formed with a process gas passage 30 that opens to a position facing the annular groove 23b of the labyrinth member 23 and extends in the axial direction within the thickness thereof. The process gas passage 30 communicates with the internal space of the shielding plate 10 through a through hole formed in the flange 29 and a through hole formed in the upper lid portion 31 of the shielding plate 10.

The process gas supplied from the process gas inlet 24 is guided to the process gas passage 30 of the rotary shaft 13 in a state where the process gas is sealed by the seal gas on the labyrinth surface of the labyrinth member 23.
The blocking plate 10 includes a disk-shaped upper lid portion 31, a cylindrical annular member 32 coupled to the lower surface of the peripheral portion of the upper lid portion 31, and an inner side of the annular member 32. And a disc-shaped center plate 33 coupled to each other. A gas space 34 is defined inside the shielding plate 10 by the upper lid portion 31, the annular member 32 and the central plate 33. The process gas from the process gas passage 30 is guided to the gas space 34.

A minute gap (slit) is formed over the entire circumference between the center plate 33 and the inner wall surface of the annular member 32, and this gap discharges process gas toward the inner peripheral edge of the lower end of the annular member 32. A gas nozzle 35 is formed.
FIG. 2 is an enlarged cross-sectional view for explaining the configuration in the vicinity of the annular member 32. The wafer W to be processed is sandwiched between a plurality of (for example, three) chuck pins 41 provided in the spin chuck 1. The chuck pin 41 includes a support portion 42 that supports the peripheral portion of the lower surface of the wafer W, and a guide pin 43 that contacts the end surface of the wafer W and restricts the horizontal movement of the wafer W.

  The annular member 32 is positioned inward in the rotational radius direction of the wafer W with respect to the guide pins 43, and faces the peripheral edge of the upper surface of the wafer W on the upper side of the wafer W held by the spin chuck 1. Yes. More specifically, the annular member 32 includes a wafer facing surface 45 that faces the peripheral surface of the upper surface of the wafer W, and a guide edge portion that protrudes toward the surface of the wafer W at the inner peripheral edge of the wafer facing surface 45. 46, an inner wall surface 47 rising vertically upward (in a direction away from the surface of the wafer W) from the inner peripheral edge of the guide edge portion 46, and an outer wall surface 48 rising vertically upward from the outer peripheral edge of the wafer facing surface 45 have. The guide edge portion 46 is formed over the entire circumference at the lower end of the inner wall surface 47 of the annular member 32 and forms an annular ridge.

A liquid film 50 of an etching solution is formed in a gap between the wafer facing surface 45 and the peripheral edge of the wafer W. The liquid film 50 contacts the wafer facing surface 45 and is guided by the guide edge 46 to the wafer W. The inward movement is restricted.
On the other hand, the central plate 33 has an annular groove (a countersink part) 51 opened radially outward at the outer peripheral edge of the lower surface, which is the surface facing the wafer W, and is not facing the wafer W. A C chamfered portion 52 is provided at the peripheral portion on the upper surface side. The C chamfered portion 52 restricts the flow path of the process gas supplied from the gas space 34 to the gas nozzle 35 and extends downward from the gas nozzle 35 along the inner wall surface 47 of the annular member 32 toward the upper surface of the wafer W. The process gas is blown out vigorously. That is, the process gas changes its direction downward toward the wafer W by the inner wall surface 47 of the annular member 32 and is blown out from the gas nozzle 35 along the inner wall surface 47 toward the upper surface of the wafer W.

In the annular member 32, a gas that opens in the inner wall surface 47 and also in the outer wall surface 48 at a position facing the annular groove 51, and communicates the space in the annular groove 51 with the space outside the blocking plate 10. A removal path 49 is formed. The gas vent passages 49 are round holes having a minute diameter (for example, a diameter of 0.5 mm), and a plurality (for example, 72 at 5 degree intervals) are formed in the circumferential direction of the annular member 32 at equal angular intervals. ing. Even if the etching solution liquid film 50 is formed between the wafer facing surface 45 and the peripheral surface of the wafer W by the function of the gas vent passage 49, the upper surface of the shielding plate 10 and the wafer W is formed. The pressure difference between the space 40 between and the outer space of the shielding plate 10 is eliminated.

  On the other hand, the guide edge portion 46 formed on the inner peripheral edge of the wafer facing surface 45 has an etchant regulating surface 46 a on the outer side in the rotational radius direction of the wafer W. The etchant restricting surface 46a forms an inclined surface (an inverted conical surface) that goes outward as the distance from the wafer W increases. The etching liquid regulating surface 46 a follows the shape of the liquid film 50 of the etching liquid and reliably prevents the liquid film 50 from entering the central region of the wafer W.

  The inner wall surface 47 of the annular member 32 is slightly outside (for example, 0.1 to several) the inner peripheral edge of the processing target region (region from the outer peripheral edge of the wafer W to the inner side of 3 to 5 mm) at the peripheral portion of the upper surface of the wafer W. However, it is preferable to be disposed on the outer side of mm. That is, the inner peripheral edge of the annular member 32 has a circular shape with a diameter shorter than the diameter of the wafer W, and is slightly larger than the diameter of the circle formed by the inner peripheral edge of the processing target region at the peripheral edge of the upper surface of the wafer W. It is preferable to form a circular shape.

The distance between the wafer facing surface 45 and the peripheral surface of the wafer W depends on the type of the etchant and the surface state of the wafer W, but is preferably about 0.3 to 5 mm, for example.
Further, the distance between the lower end of the guide edge portion 46 (the part closest to the wafer W) and the surface of the wafer W varies depending on the type of the etching solution and the surface state of the wafer W. It is preferable to set the degree.

The annular groove 51 formed adjacent to the inner wall surface 47 of the annular member 32 is a groove that is recessed in a direction away from the surface of the wafer W, and the width of the groove is preferably 1 mm or more. .
As shown in FIG. 1, the spin chuck 1 is provided with a disc-shaped spin base 441 and a chuck pin drive mechanism 44 for operating a chuck pin 41 erected on the spin base 441. ing. The chuck pin drive mechanism 44 includes, for example, a link mechanism 442 provided inside the spin base 441 and a drive mechanism 443 that drives the link mechanism 442. The drive mechanism 443 includes a rotation-side drive force transmission member 444 that rotates together with the rotation shaft 3, a fixed-side drive force transmission member 446 that is coupled to the outer peripheral side of the rotation-side drive force transmission member 444 via a bearing 445, An elevating drive mechanism 447 for driving a chuck pin for elevating the fixed side driving force transmission member 446 is provided.

  When the fixed drive force transmission member 446 is moved up and down by the chuck pin drive lift drive mechanism 447, the rotation drive force transmission member 444 is moved up and down together with this, and the lift movement is transmitted to the link mechanism 442, so that the chuck pin 41 Converted to motion. Thus, by operating the chuck pin driving lift drive mechanism 447, the wafer W can be clamped by the chuck pins 41, or the clamping can be released. Since the fixed side driving force transmission member 446 and the rotation side driving force transmission member 444 are coupled via the bearing 445, even when the spin chuck 1 is rotating, the holding of the wafer W by the chuck pins 41 is released. The holding position of the wafer W can be changed by loosening or loosening.

  When the wafer W to be processed is introduced into the spin chuck 1, the blocking plate 10 is retracted to the retracted position away from the spin chuck 1 by the function of the blocking plate lifting / lowering drive mechanism 11. In this state, an unprocessed wafer W is delivered to the spin chuck 1 by a substrate transfer robot (not shown). Thereafter, the wafer W is held between the chuck pins 41 by the action of the chuck pin driving mechanism 44.

Thereafter, the blocking plate 10 is moved down toward the spin chuck 1 by the operation of the blocking plate lifting / lowering drive mechanism 11, the central plate 33 is positioned close to the central region of the wafer W, and the annular member 32 is moved to the wafer W. It is set as the state which adjoined to the surface of the peripheral part. At this time, the distance between the upper surface of the wafer W and the wafer facing surface 45 is, for example, 0.5 mm. In this state, the spin chuck 1 is rotationally driven by the rotational drive mechanism 2, and the blocking plate 10 is rotationally driven by the motor 12. At this time, the rotation drive mechanism 2 and the motor 12 are controlled so that the spin chuck 1 and the blocking plate 10 rotate synchronously, that is, rotate at substantially the same rotational speed in the same direction.

In this state, the etching solution supply valve 7 is opened, whereby the etching solution is supplied from the central axis nozzle 5 toward the center of the back surface of the wafer W. The etching solution receives a centrifugal force, travels along the lower surface of the wafer W, reaches the peripheral end surface thereof, wraps around the peripheral end surface, and reaches the peripheral portion of the upper surface of the wafer W.
Then, as shown in FIG. 2, a liquid film 50 is formed in a gap between the wafer facing surface 45 of the annular member 32 and the surface of the peripheral portion of the wafer W. The liquid film 50 is in contact with the wafer facing surface 45, and is further in contact with the etching liquid regulating surface 46 a of the guide edge portion 46. Since the inner side of the guide edge portion 46 is connected to the inner wall surface 47 that rises substantially perpendicular to the surface of the wafer W, the liquid film 50 of the etching solution is greatly increased from the inner wall surface 47 of the annular member 32 inside the wafer W. Can't get into the territory. Thereby, the etching width in the peripheral part of the upper surface of the wafer W can be controlled with high accuracy.

  On the other hand, one or both of the process gas supply valve 19 and the process gas supply valve 26 are opened, and the process gas is supplied from the gas space 34 and the upper surface space 40 of the wafer W to the annular groove 51. The pressure of the process gas can surely prevent the etchant liquid film 50 from entering the inner region of the wafer W. The space inside the annular member 32 is sealed by the liquid film 50, but the space in the annular groove 51 and the external space of the blocking plate 10 communicate with each other via the gas vent passage 49, so that the space is blocked. Due to the pressure difference between the inside and the outside of the plate 10, the liquid film 50 is not torn at any position.

  In this state, when the surface of the peripheral edge of the wafer W is etched for a predetermined time, the etching solution supply valve 7 is closed and the blocking plate 10 is moved to a predetermined height (for example, the wafer facing surface) by the blocking plate elevating drive mechanism 11. 45 and a position where the distance between the upper surface of the wafer W is 50 mm). Thereafter, the pure water supply valve 6 is opened, the process gas supply valve 26 is closed, and the pure water supply valve 15 is opened. Thus, pure water is supplied to the upper and lower surfaces of the wafer W, and pure water rinsing processing for washing the wafer W is performed.

  Thereafter, the pure water supply valves 6 and 15 are closed, and the shielding plate 10 is lowered again by the shielding plate raising / lowering drive mechanism 11 so as to be close to the upper surface of the wafer W (for example, the interval between the wafer facing surface 45 and the upper surface of the wafer W is 0). .3mm position). In this state, the spin chuck 1 is driven to rotate at a high speed, and a drying process for removing the water on the wafer W by removing the water by centrifugal force is performed.

The process gas supply valves 9 and 19 are always opened during the processing of the wafer W, and hold the upper and lower surfaces of the wafer W in an inert gas atmosphere. Similarly, the seal gas supply valve 27 is always opened during the processing of the wafer W, thereby preventing the atmosphere from flowing in and out of the flow path of the process gas.
As described above, according to this embodiment, the liquid film 50 of the etching solution at the peripheral edge of the wafer W is reliably regulated by the annular member 32 so as not to enter the inner region of the wafer W. Thereby, the etching width in the peripheral part of the wafer W can be controlled with high precision, and a favorable process can be performed on the peripheral part of the wafer W.

FIG. 3 is a cross-sectional view for explaining the configuration of a substrate peripheral edge processing apparatus according to the second embodiment of the present invention. 3, portions corresponding to the respective portions shown in FIG. 1 are denoted by the same reference numerals as those in FIG.
In this embodiment, the spin base 441 of the spin chuck 1 is provided with a plurality of receive pins 61 (for example, three at regular angular intervals) spaced apart in the circumferential direction for receiving and holding the blocking plate 60. ing. The blocking plate 60 is formed of a plate-like body having an outer diameter larger than that of the wafer W, and a plurality of through holes 62 that fit into the receiving pins 61 are spaced apart in the circumferential direction at the peripheral portion thereof. Is formed. The blocking plate 60 is held on the spin base 441 and is driven to rotate together with the spin base 441 by supporting the lower surface of the peripheral portion of the through hole 62 on the shoulder portion 61 a of the receive pin 61. The blocking plate 60 held by the receive pins 61 is positioned so that its lower surface 63 is very close to the upper surface of the wafer W held by the spin chuck 1.

  The blocking plate 60 has a through hole 64 in the center, and has an annular portion 65 integrally at a position corresponding to the peripheral edge portion of the upper surface of the wafer W. An annular groove 66 that is recessed in a direction away from the wafer W is formed at a position adjacent to the inside of the annular portion 65 over the entire circumference. Portions other than the annular portion 65 of the blocking plate 60 form a lid portion that substantially closes the space surrounded by the annular portion 65.

  The annular portion 65 includes a wafer facing surface 67 that faces the peripheral portion of the wafer W, a guide edge portion 68 that protrudes so as to approach the upper surface of the wafer W at the inner peripheral edge of the wafer facing surface 67, and the guide edge portion 68. And an outer wall surface 70 that rises from the outer peripheral edge of the wafer facing surface 67 in the rotational radial direction. The inner peripheral edge of the wafer facing surface 67 is circular with a diameter smaller than the diameter of the wafer W. Further, the circle formed by the inner peripheral edge is slightly larger than the inner peripheral edge of the processing target region at the peripheral edge portion of the upper surface of the wafer W.

  A flange pipe 71 having an internal space communicating with the through hole 64 is coupled to the upper surface of the shield plate 60, and a shield plate flange 72 having a through hole in the center is coupled to the upper end of the flange pipe 71. ing. A central axis nozzle 75 is disposed so as to penetrate the central through hole of the shielding plate flange 72 and the internal space of the flange pipe 71 and further reach the through hole 64.

  The central axis nozzle 75 is a double pipe including a processing liquid supply pipe 76 and a process gas supply pipe 77, and supplies the processing liquid (pure water or chemical liquid) to the upper surface of the wafer W from the processing liquid supply pipe 76. The process gas can be supplied from the space between the processing liquid supply pipe 76 and the process gas supply pipe 77 to the space between the upper surface of the wafer W and the blocking plate 60. The process gas travels along the upper surface of the wafer W toward the radially outer side, hits the inner wall surface 69 of the annular portion 65, and descends toward the upper surface of the wafer W along the inner wall surface 69. become.

As in the case of the first embodiment described above, the annular portion 65 is formed with a large number of gas vent passages 80 communicating with the inner wall surface 69 and the outer wall surface 70 at intervals in the circumferential direction. .
A blocking-side labyrinth member 73 is fixed to the upper surface of the blocking plate flange 72, and a nozzle-side labyrinth member 74 is coupled to the blocking-side labyrinth member 73 in a non-contact state. A seal gas (purge gas) is supplied to the space between the blocking-side labyrinth member 73 and the nozzle-side labyrinth member 74.

The nozzle side labyrinth member 74 is fixed to a nozzle holding portion 78 held in a non-rotating state. The nozzle holding portion 78 is raised and lowered by a nozzle raising / lowering drive mechanism 79.
On the other hand, in order to raise and lower the shielding plate 60, a shielding plate hand 81 and a shielding plate raising / lowering drive mechanism 82 for raising and lowering the shielding plate hand 81 are provided. The blocking plate hand 81 includes a through hole that allows the flange pipe 71 to pass therethrough, and a plurality of hand pins 83 that fit into a plurality of through holes 72 a formed in the peripheral edge of the blocking plate flange 72.

With this configuration, the blocking plate hand 81 is moved up and down by the blocking plate lifting / lowering drive mechanism 82 so that the blocking plate 60 is retracted above the spin chuck 1 or engaged with the receive pin 61 provided in the spin chuck 1. Can be.
In this substrate peripheral processing apparatus, the blocking plate 60 receives the rotational force from the spin chuck 1 and rotates together with the spin chuck 1. With regard to the processing of the peripheral portion on the upper surface of the wafer W, the above-described first processing is performed. This is almost the same as the case of the embodiment.

  That is, the etching solution supplied from the central axis nozzle 5 toward the center of the lower surface of the wafer W is directed outward in the radial direction by centrifugal force, wraps around the peripheral end surface of the wafer W, and reaches the periphery of the upper surface portion. It reaches. This etching solution forms a liquid film in the gap between the peripheral edge of the upper surface of the wafer W and the wafer facing surface 67 of the annular portion 65. This liquid film contacts the wafer facing surface 67 and further contacts the guide edge portion 68. As a result, the etching process on the peripheral edge of the upper surface of the wafer W proceeds in a state where the etching process width is precisely controlled.

On the other hand, the process gas supplied from the process gas supply pipe 77 to the space above the wafer W hits the inner wall surface 69 of the annular groove formed inside the annular portion 65, and moves downward along the inner wall surface 69. Creates an airflow that heads. Thereby, it is possible to reliably prevent the etching liquid from entering the inner region of the wafer W.
In addition, the annular portion 65 is formed with a gas vent path 80 that allows the space in the annular groove 66 and the space outside the blocking plate 60 to communicate with each other, so that the pressure difference between the inside and outside of the annular portion 65 may increase. Absent. Thereby, there is no possibility that the liquid film of the etching solution formed on the peripheral edge of the upper surface of the wafer W is broken at any location.

FIG. 4 is a cross-sectional view for explaining the configuration of a substrate peripheral edge processing apparatus according to the third embodiment of the present invention. In FIG. 4, each part having the same function as that shown in FIG. 1 is given the same reference numeral as in FIG. 1.
In this embodiment, a liquid receiving groove 85 having a funnel-shaped cross section over the entire circumference is formed in the upper lid portion 31 of the shielding plate 10 at the peripheral portion corresponding to the upper side of the annular member 32. At the bottom of the liquid receiving groove 85, for example, openings (discharge ports) are formed at appropriate intervals in the circumferential direction, and the openings are formed in the annular member 32 along a plurality of vertical directions. Each communicates with the processing liquid supply path 86. That is, a plurality of processing liquid supply paths 86 are formed along the circumferential direction of the annular member 32, for example, at equiangular intervals (for example, 72 at intervals of 5 degrees).

  The processing liquid supply path 86 has a discharge port (for example, a round hole having a diameter of 0.5 mm) opened in the wafer facing surface 45, and between the wafer facing surface 45 and the peripheral edge of the upper surface of the wafer W. Then, the etching solution is supplied from a direction substantially perpendicular to the upper surface of the wafer W. As a result, a liquid film of an etching solution that contacts the wafer facing surface 45 is formed on the peripheral edge of the upper surface of the wafer W. Etching liquid is supplied to the liquid receiving groove 85 continuously or intermittently from a moving nozzle 88 provided so as to be able to approach / separate from the rotation axis of the blocking plate 10. The moving nozzle 88 can be supplied with an etching solution from an etching solution supply source through an etching solution supply valve 89. In this embodiment as well, the etching solution is supplied from the central axis nozzle 5 below the wafer W to the lower surface of the wafer W, and therefore the etching process of the lower surface of the wafer W is performed.

With such a configuration, as in the case of the first embodiment described above, the peripheral edge portion of the wafer W, the pure water rinsing process on the upper and lower surfaces of the wafer W, and the drying process on the upper and lower surfaces of the wafer W are performed. It can be carried out.
However, in the case of the configuration of this embodiment, it is not always necessary to supply the etching solution from the central axis nozzle 5 directed downward of the wafer W in the step of etching the peripheral edge of the upper surface of the wafer W. That is, when it is not necessary to etch the lower surface of the wafer W, the etching solution may not be supplied from the central axis nozzle 5.

When the etching solution is not supplied from the central shaft nozzle 5, it is not necessary to transfer the etching solution to the peripheral end surface of the wafer W by centrifugal force. Compared to the case of the first embodiment, the speed is low.
Furthermore, in the configuration of this embodiment, the peripheral edge of the wafer W can be etched while the spin chuck 1 is held substantially stationary.

  That is, the blocking plate 10 is rotated at a low speed while the rotation of the spin chuck 1 is stopped. In this state, when the etching liquid is discharged from the moving nozzle 88, the discharged etching liquid is received by the liquid receiving groove 85, and the etching liquid is supplied over the entire circumference of the liquid receiving groove 85. An etching solution is supplied from the supply path 86 to the peripheral edge of the upper surface of the wafer W. Then, after supplying the necessary amount of etching solution, the valve 89 is closed to stop the supply, and the rotation of the blocking plate 10 is stopped. Thereby, the etching liquid can be accumulated over the entire circumference of the surface of the peripheral edge. This liquid accumulation state is maintained for a predetermined time (for example, 5 to 40 seconds), and a selective etching process can be performed on the peripheral portion of the wafer W. In such a liquid filling process, the consumption of the etching liquid can be significantly reduced. The accumulated etching solution forms a liquid film that contacts the wafer facing surface 45 of the annular member 32. The movement of the liquid film to the inside of the wafer W is surely restricted by the guide edge portion 46.

Even in the case where the liquid accumulation process is performed, the etching liquid may be continuously or intermittently supplied from the moving nozzle 88 to the liquid receiving groove 85 as necessary. Further, the spin chuck 1 may be rotated at a low speed at such a speed that the etching liquid accumulated on the peripheral edge of the wafer W is not discharged out of the wafer W by centrifugal force.
In the above description, the etching solution is supplied in a state where the blocking plate 10 is rotated at a low speed while the rotation of the spin chuck 1 is stopped. However, the present invention is not limited to this, and the supply of the etching solution is not limited to this. 1 and the blocking plate 10 may be rotated at different low speeds, or may be performed while the spin chuck 1 is rotated at a low speed while the blocking plate 10 is stationary. Alternatively, both the spin chuck 1 and the blocking plate 10 may stop rotating, and the etching solution may be supplied while moving the moving nozzle 88 along the entire circumference of the liquid receiving groove 85. In any case, the etching solution can be accumulated over the entire periphery of the peripheral surface of the upper surface of the wafer W.

The “slow” rotation of the spin chuck 1 and the blocking plate 10 here refers to a rotation speed at which the etching solution does not spill out from the peripheral edge of the upper surface of the wafer W, for example, rotation of 60 rpm or less. Speed is preferred.
As described above, if the etching solution is supplied to the peripheral surface of the upper surface of the wafer W with the wafer facing surface 45 of the annular member 32 being close to the peripheral surface of the upper surface of the wafer W, the wafer facing surface 45 and the peripheral surface of the upper surface of the wafer W are aligned. The etching solution is stably held in the gap, and the etching process can be performed satisfactorily without consuming a large amount of the etching solution.

After the etching liquid is deposited on the peripheral edge of the upper surface of the wafer W and processed, the wafer W is rinsed and dried in the same manner as described in the first embodiment. Is called.
FIG. 5 is a partial enlarged cross-sectional view for explaining various forms of the annular member that controls the liquid film of the etchant at the peripheral edge of the surface of the wafer W. FIG. FIG. 5 (f) shows a configuration example similar to the case of the first embodiment shown in FIGS. 1 and 2, and FIG. 5 (d) shows a second example shown in FIG. A configuration similar to that of the embodiment is shown. In the figure, the symbol E indicates an etching solution.

  FIG. 5A shows the most basic form of the annular member. The annular member has an inner peripheral edge having a diameter smaller than the diameter of the wafer W, and an annular member having a wafer facing surface 45 facing the peripheral edge of the upper surface of the wafer W. The members are shown. No guide edge portion is provided on the inner peripheral edge of the wafer facing surface 45. Even without the guide edge portion, the liquid film of the etching solution E is regulated at a position slightly inward from the inner wall surface 47 of the annular member, and the intrusion into the inner region of the wafer W is suppressed. The wafer facing surface 45 is in contact with the liquid film of the etching liquid E and forms a liquid-tight state.

FIG. 5B shows a configuration example in which the configuration of FIG. 5A is developed and the cover 90 is integrally provided. By providing the lid 90, in the inner region of the annular member, droplets from the surroundings may scatter over the annular member or mist may adhere to the central region (device formation region) of the wafer W. Disappear.
FIG. 5 (c) shows a configuration in which the form of FIG. 5 (b) is further developed and an annular groove 51 is formed at a position adjacent to the inner wall 47 of the annular member on the inner side. The configuration of FIG. 5D is a further development of the configuration of FIG. 5C. By providing the guide edge portion 46, the liquid film of the etching solution E is applied to the inner region of the wafer W. The intrusion is reliably controlled.

5D is further developed, gas is supplied to the inner wall surface 47 of the annular member, and the gas is blown out from the gas nozzle 35 to the surface of the wafer W along the inner wall surface 47. As shown in FIG. The form (e) is obtained. In this configuration, since the inside of the annular member can be made positive pressure, the liquid film of the etching liquid E can be controlled with high accuracy.
Furthermore, by deforming the configuration of FIG. 5 (e), forming a countersunk portion on the outer peripheral edge of the lower surface of the center plate 33, and forming the annular groove 51 between the inner wall surface 47 of the annular member, The configuration of FIG. 5F is obtained. Comparing the configuration of FIG. 5 (e) with the configuration of FIG. 5 (f), in the configuration of FIG. 5 (e), there is an annular groove at a position adjacent to the inner side with respect to the inner wall surface 47 of the annular member. Since it is not provided, it can be said that the configuration of FIG.

  As shown in FIG. 5G, the outer peripheral edge of the wafer facing surface 45 of the annular member may be located outward from the outer peripheral edge of the wafer W. The wafer facing surface 45 may be formed to extend outward from the outer peripheral edge of the wafer W. If such a configuration is adopted, the etching liquid E supplied from the lower surface of the wafer W can be captured well on the peripheral end surface of the wafer W, and a good liquid film is reliably formed on the peripheral edge of the upper surface of the wafer W. Can be formed.

FIG. 6 is a cross-sectional view showing a modified example related to the shape of the inner wall surface of the annular member. In the example shown in FIG. 6A, the inner wall surface 47 forms an inclined surface (conical surface) that goes inward of the wafer W as the distance from the upper surface of the wafer W increases.
In the example of FIG. 6B, the inner wall surface 47 forms an inclined surface (an inverted conical surface) that goes to the outer side of the wafer W as the distance from the upper surface of the wafer W increases.

In the configuration of FIG. 6C, the inner wall surface 47 is connected to a vertical rising surface 47 a that rises almost vertically from the upper surface of the wafer W and an upper edge of the vertical rising surface 47 a, and as the wafer W moves away from the upper surface of the wafer W, It is a bent surface having an inclined surface 47b that faces inward.
If the inner wall surface 47 of the annular member is an inclined surface in the form of FIG. 6A, the etching solution E toward the inside of the wafer W will be separated from the surface of the wafer W along the inclined inner wall surface 47. However, the movement of the etching solution E along the inner wall surface 47 is hindered by gravity. Alternatively, especially when the annular member is rotating, the movement of the etching solution E along the inner wall surface 47 is hindered by the centrifugal force. Therefore, the liquid film of the etching liquid E can be reliably controlled below the wafer facing surface, and the etching liquid E can be reliably prevented from reaching the inside of the wafer W.

FIG. 7 is a cross-sectional view showing a modification of the shape of the wafer-facing surface of the annular member. In the example of FIG. 7A, the wafer facing surface 45 forms an inclined surface (an inverted conical surface) that approaches the upper surface of the wafer W as it goes inward of the wafer W.
In the example of FIG. 7B, the wafer facing surface 45 is a curved surface that is curved so as to approach the upper surface of the wafer W as it goes inward of the wafer W.

  Further, in the example of FIG. 7C, the wafer facing surface 45 is provided on the outer peripheral side, and provided on the outer peripheral side parallel portion 45a substantially parallel to the upper surface of the wafer W and on the inner side of the outer peripheral side parallel portion 45a. The inner peripheral side parallel part 45b that is closer to the upper surface of the wafer W than the outer peripheral side parallel part 45a and is parallel to the upper surface of the wafer W, and the inclination that couples the inner peripheral side parallel part 45b and the outer peripheral side parallel part 45a And a bent surface having a portion 45c. The inclined portion 45 c forms an inclined surface (an inverted conical surface) that approaches the wafer W as it goes inward of the wafer W.

  7A, 7 </ b> B, and 7 </ b> C, the distance between the wafer facing surface 45 and the upper surface of the wafer W becomes shorter toward the inner side of the wafer W. By forming the wafer facing surface 45 in such a shape, the liquid film of the etching liquid E can be controlled more satisfactorily, and the etching liquid E can be reliably prevented from entering the inner region of the wafer W. . Further, since it becomes easy to attract the etching solution between the wafer facing surface 45 and the upper surface of the wafer W, a liquid-tight state can be formed satisfactorily.

  FIG. 8 is a cross-sectional view showing a modified example of the guide edge portion 46 provided on the wafer facing surface 45 of the annular member. In the example of FIG. 8A, the inner side surface of the wafer W in the guide edge portion 46 is an inclined surface (conical surface) that goes inward toward the wafer W as the distance from the surface of the wafer W increases. This is an example in which the outer side surface of the wafer W in the portion 46 is an inclined surface (an inverted conical surface) that goes outward from the wafer W as the distance from the surface of the wafer W increases.

The example of FIG. 8B is an example in which the guide edge portion 46 is a ridge having a substantially rectangular cross section in the cross section, and the etching liquid regulating surface 46 a is a cylindrical surface substantially perpendicular to the upper surface of the wafer W.
The example of FIG. 8C is an example in which the etching solution regulating surface 46a is not an inclined surface (conical surface) but a curved surface having a curved surface in cross section.
Further, in the example of FIG. 8D, the etching liquid regulating surface 46a is retracted to the outer side of the wafer W, thereby providing a wafer facing portion 46b facing the wafer W at the lower end of the guide edge portion 46. This is an example in which a liquid drainage passage 95 opening in the facing portion 46b is formed in an annular member. The drainage path 95 is open at the outer wall surface 48 of the annular member.

  For example, when the annular member is rotated together with the blocking plate 10, a centrifugal force acts on the etching liquid E in the liquid drainage path 95, and as a result, the etching liquid E is sucked up from the wafer facing portion 46 b of the guide edge portion 46. Then, the liquid passes through the drainage path 95 and is discharged to the outer side of the annular member. Thereby, it can prevent more reliably that the etching liquid E penetrate | invades into an inner side rather than an annular member.

In the example of FIG. 8 (e), the liquid draining path 95 joins the gas venting path 49. That is, when the process gas is supplied to the inside of the annular member, the process gas is discharged to the outside of the annular member through the gas vent passage 49, and the wafer facing portion 46b is caused by the ejector effect generated at this time. Then, the etching solution E can be sucked up and discharged.
FIG. 9 is a schematic cross-sectional view showing an embodiment for supplying an etching solution to the peripheral portion of the upper surface of the wafer W. FIG. FIG. 9A shows the example shown in FIG. 1 and FIG. That is, the etching solution E is supplied toward the center of the lower surface of the wafer W, and this etching solution E is guided outward by the centrifugal force and wraps around the peripheral end surface of the wafer W so that the periphery of the upper surface of the wafer W is To the department.

  FIG. 9B shows an example in which the etching solution E is supplied from the nozzle 100 provided below the wafer W (that is, below the spin chuck 1) toward the peripheral edge of the lower surface of the wafer W. . Also in this case, the etching solution E that receives the centrifugal force on the lower surface of the wafer W goes around the peripheral end surface of the wafer W and reaches the peripheral portion of the upper surface. In the example of FIG. 9B, the etching liquid E is discharged from the discharge port of the nozzle 100 at an inclination angle (for example, 10 to 45 degrees, preferably 30 degrees) from the lower side of the wafer W toward the outer side of the wafer W. In this example, the light is incident on the lower surface of the wafer W at that angle.

  In the example of FIG. 9C, an etching solution E is supplied from the nozzle 101 provided above the wafer W to the upper surface of the wafer W from above the annular member 32 on the outer side of the wafer W. It is shown. In this case, it is preferable that the outer wall surface 48 of the annular member 32 is located sufficiently inward from the peripheral end surface of the wafer W. Even in such a configuration, the annular member 32 can prevent the liquid film of the etching liquid E from entering the central region of the wafer W.

  In the example of FIG. 9D, an example in which the etching solution E is supplied from the nozzle 102 toward the outer wall surface 48 of the annular member 32 is shown. In this case, the supplied etching solution E is supplied to the peripheral portion of the upper surface of the wafer W through the outer wall surface 48 of the annular member 32. In order to satisfactorily guide the etching solution E flowing down along the outer wall surface 48 to the peripheral edge of the wafer W, the wafer facing surface 45 is inclined so as to approach the upper surface of the wafer W toward the inner side of the wafer W. It is preferable.

  The example of FIG. 9E is an example in which an etchant supply path 105 is provided in the blocking plate 10 and this etchant supply path 105 is communicated with a discharge port opened in the wafer facing surface 45 of the annular member 32. With this configuration, the etching solution E can be supplied directly to the peripheral edge of the upper surface of the wafer W. In the example of FIG. 9 (e), the etching solution supply path 105 is inclined so as to go outward in the annular member 32 toward the wafer facing surface 45, and on the periphery of the upper surface of the wafer W, The etching liquid E is supplied from a direction inclined outward from W.

The example of FIG. 9F is the same as the configuration shown in FIG. 4, and a liquid receiving part 107 that receives the etching liquid E is provided on the upper part of the annular member 32. The etching solution is supplied from the etching solution supply nozzle 108 continuously or intermittently. The liquid receiver 107 communicates with the discharge port opened in the wafer facing surface 45.
In the example of FIG. 9G, the liquid receiving part 110 that opens to the outer wall surface 48 of the annular member 32 is provided, and the etching liquid E from the nozzle 111 is supplied to the liquid receiving part 110 from the side. Is done. The liquid receiving part 110 communicates with a liquid supply path 112 formed inside the annular member 32, and the liquid supply path 112 is open at the wafer facing surface 45.

In the example of FIG. 9 (h), the annular member 32 is provided with an etching solution supply path 115 that opens to the wafer facing surface 45, and a drainage path 116 that also opens on the wafer facing surface 45. ing. With this configuration, the etching liquid E is supplied from the etching liquid supply path 115 between the wafer facing surface 45 and the peripheral edge of the upper surface of the wafer W, and the etching liquid E is discharged from the drainage path 116, thereby etching. While circulating the liquid E, the etching process at the peripheral edge of the upper surface of the wafer W can be performed. Thereby, since a new etching solution is always supplied to the peripheral portion of the upper surface of the wafer W, the etching processing speed can be improved.

9C, 9D, 9E, and 9F, when the wafer W is held in a stationary state and the etching solution E is deposited on the peripheral edge of the upper surface of the wafer W and the etching process is performed on that portion. (G) It is preferable to supply the etching solution E in any form of (h).
When the wafer W is rotated and processed, the two-dot chain line arrow indicates that the wafer W takes the form of FIGS. 9A, 9B, 9C, 9D, 9E, 9F, 10G, and 9H. As shown, if the etching solution E is supplied toward the center of the lower surface of the wafer W, the processing on the lower surface of the wafer W can be performed at the same time.

  As mentioned above, although embodiment of this invention was described, this invention can also be implemented with another form. For example, in the above-described embodiment, the gas nozzle 35 has a circular slit opening continuous over the entire circumference, but is spaced in the circumferential direction around the rotation axis of the wafer W (for example, at equal angular intervals). A plurality of gas discharge ports may be formed. Further, the shape of the gas discharge port may be a round hole or an arc-shaped long hole.

  In the above embodiment, when processing the peripheral portion of the upper surface of the wafer W, the processing liquid is not supplied to the central portion of the upper surface of the wafer W. However, the processing of the peripheral portion of the upper surface of the wafer W is not performed. The pure water supply valve 15 may be opened to cover the central area of the wafer W with pure water and protect it from the etching solution. For the purpose of protecting the central region of the wafer W, an etching protective solution such as carbonated water, hydrogen water, reduced water, ionic water or magnetic water can be used in addition to pure water.

However, the etching protection liquid supplied to the central region of the wafer W is mixed with the etching liquid at the peripheral portion of the wafer W to dilute the etching liquid. Therefore, in order to reduce the consumption of the etching liquid, the etching protection liquid is used. It is preferable not to use a liquid.
In the above-described embodiment, the spin chuck 1 configured to sandwich the peripheral end surface of the wafer W is exemplified. However, the vacuum chuck that holds the lower surface of the wafer W by suction and the end surface of the wafer W are in contact with the vacuum chuck. A roller-type chuck that rotates the wafer W by rotating at a position may be adopted. Alternatively, when the wafer W is not rotated, a holding means for moving the wafer W only in space or a fixed holding means for holding the lower surface of the wafer W with a plurality of pins fixed to the ground is adopted. May be.

In the above embodiment, an example of processing a semiconductor wafer that is a circular substrate has been described. However, particularly in the case of adopting a process in which an etching solution is deposited on the substrate, the liquid crystal display device is used. The present invention can also be applied to a square substrate such as a glass substrate.
In addition, various design changes can be made within the scope of matters described in the claims.

Features substantially described in this specification will be described below.
1. A substrate peripheral processing apparatus for supplying an etching solution to the peripheral surface of a substrate (W) and etching away unnecessary materials on the peripheral surface, and supplying the etching liquid to the peripheral portion of the substrate Supply means (5, 85, 86, 88, 100, 101, 102, 105,
108, 107, 110, 112) and the surface of the peripheral portion of the substrate so as to be close to each other with a predetermined gap that can contact the liquid film of the etching solution formed on the surface of the peripheral portion. And an annular member (32, 65) having an inner peripheral edge on or inside the outer peripheral edge of the substrate and defining a treatment width by an etching solution on the surface of the peripheral edge of the substrate. Substrate periphery processing apparatus. The alphanumeric characters in parentheses indicate the corresponding components in the above-described embodiment. same as below.

  According to this configuration, the annular member is disposed with a predetermined gap with respect to the surface of the peripheral edge portion of the substrate, and the annular member has an inner peripheral edge on the inner peripheral edge of the substrate or on the inner side thereof. The etching processing width on the surface of the peripheral edge of the substrate is defined. That is, the etching solution supplied from the etching solution supply means forms a liquid film on the peripheral portion of the surface of the substrate. When the annular member comes into contact with the liquid film, the etching solution is formed near the inner peripheral edge of the annular member. It is regulated and the etching solution can be prevented from entering the inner region of the substrate. In this way, the peripheral edge of the substrate can be etched with a processing width with good accuracy.

The substrate may be a substantially circular substrate such as a semiconductor wafer, or may be a square substrate such as a glass substrate for a liquid crystal display device.
Since the inner peripheral edge of the annular member has a shape corresponding to the outer peripheral edge of the substrate, it has a substantially circular shape when processing a substantially circular substrate, and has a rectangular shape when processing a rectangular substrate. become.
2. Item 2. The substrate peripheral processing apparatus according to Item 1, further comprising substrate holding means (1) for holding the substrate from one surface side, wherein the annular member is disposed on the other surface side of the substrate.

According to this configuration, the substrate is held from the one surface side by the substrate holding means, and the peripheral portion of the substrate can be processed by arranging the annular member on the other surface side.
For example, the substrate holding means may hold the substrate from below, and the annular member may be disposed close to the upper surface side of the substrate.
3. While holding the substrate in a stationary state (non-rotating state or low-speed rotation (speed at which the etching solution does not jump out of the substrate by centrifugal force)), the etching solution is supplied from the etching solution supplying means to the peripheral portion of the substrate. Item 3. The substrate peripheral edge processing apparatus according to Item 1 or 2, wherein

In this case, it is possible to pour an etching solution on the peripheral edge of the substrate, and to remove unnecessary substances on the peripheral edge of the substrate surface by etching with the pour etching liquid. Since the liquid film of the accumulated etching liquid is prevented from entering the inside of the substrate by the action of the annular member, the etching width can be defined with good accuracy.
By piling up the etching solution on the substrate and processing the peripheral portion thereof, the consumption of the etching solution can be significantly reduced. In particular, the action of the annular member allows the etchant to be stably held in the gap between the annular member and the peripheral edge of the substrate surface, so that the etchant may enter the substrate inward or spill out. In addition, the consumption of the etching solution can be significantly reduced.

Note that the stationary state of the substrate means a state where the substrate is not rotating or moving and a state substantially equivalent thereto. For example, the state equivalent to the state in which the substrate is not rotating includes a state in which the etching solution accumulated on the substrate is rotated at a low speed that does not jump out of the substrate by centrifugal force. In addition, the state equivalent to the state in which the substrate is not moving means that the etching solution accumulated on the substrate is moved at a low acceleration (vertical direction, horizontal direction, or diagonal direction) so that it does not spill out of the substrate due to inertia. Including the state that has been moved).
4). The substrate is a substantially circular substrate and further includes substrate rotating means (1, 2) for rotating the substrate, and the inner peripheral edge of the annular member has a circular shape having an inner diameter equal to or smaller than the diameter of the substrate. Item 3. The substrate peripheral processing apparatus according to Item 1 or 2.

In this configuration, the substrate is a substantially circular substrate, and the substrate is rotated by the substrate rotating means. For example, the substrate rotating means may include a substrate holding means (1) that holds the substrate and a rotation drive mechanism (2) that rotates the substrate holding means.
The annular member is preferably driven to rotate in synchronization with the rotation of the substrate (that is, the rotation direction and the rotation speed are the same as those of the substrate). However, the annular member may be kept stationary. However, it may be rotated at a rotational speed different from the rotational speed of the substrate. When the annular member is rotationally driven in synchronization with the rotation of the substrate, the annular member may be synchronously rotated by a rotational drive mechanism different from the rotational drive mechanism, or on the substrate holding means. By mounting the annular member on the substrate, both the substrate holding means and the annular member may be rotated by the rotational drive mechanism.
5. Item 5. The substrate peripheral processing apparatus according to Item 4, wherein the substrate is rotated by the substrate rotating means, and the etching liquid is supplied from the etching liquid supplying means to the peripheral portion of the substrate.

According to this configuration, the substrate is rotated, and the etching solution is supplied from the etching solution supply unit to the peripheral portion of the substrate. At this time, a liquid film of the etching solution is formed on the peripheral edge of the substrate, but the action of the annular member prevents the liquid film of the etching solution from entering the inner region of the substrate.
6). Item 6. The substrate periphery processing according to any one of Items 1 to 5, wherein the annular member has a substrate facing surface (45, 67) that extends outward from the inner periphery and opposes the surface of the periphery of the substrate. apparatus.

According to this configuration, the liquid film of the etchant can be brought into contact with the substrate facing surface, and the liquid film can be present between the substrate facing surface and the peripheral surface of the substrate. This makes it possible to reliably form a stable liquid film of the etching liquid over the entire surface of the peripheral edge of the substrate, thereby enabling a more stable and uniform etching process.
7). Item 7. The substrate periphery processing apparatus according to Item 6, wherein the substrate facing surface is a surface substantially parallel to the surface of the periphery of the substrate.

With this configuration, a more stable liquid film of an etching solution can be formed.
8). Item 7. The substrate periphery processing apparatus according to Item 6, wherein the substrate facing surface is an inclined surface that is inclined so that the distance from the substrate decreases toward the inner periphery.
The inclined surface may be a flat surface or a curved surface. When the annular member has a substantially circular inner peripheral edge, the inclined surface may be a conical surface or a curved surface curved in a concave or convex shape with respect to the conical surface.

According to this configuration, since the substrate facing surface is an inclined surface having a shape that becomes closer to the substrate as it goes inward of the substrate, the etching solution is surely provided in the gap between the substrate facing surface and the peripheral surface of the substrate. In addition, it is possible to more effectively prevent the etchant from entering the inner region of the substrate.
9. Item 9. The substrate periphery processing apparatus according to any one of Items 6 to 8, wherein the outer peripheral edge of the substrate facing surface is located outward from the outer peripheral edge of the substrate.

According to this configuration, for example, when the etching solution is supplied from the substrate surface opposite to the surface of the peripheral portion of the substrate, the etching solution that wraps around from the end surface of the substrate is captured well by the substrate facing surface. It can guide to the gap between the substrate facing surface and the surface of the peripheral edge of the substrate.
For example, when the substrate is held approximately horizontally and rotated around a rotation axis passing through the center of the substrate, and the annular member is disposed on the upper surface side of the substrate, the etching solution is supplied to the lower surface side of the substrate, This etching solution receives centrifugal force, travels along the lower surface of the substrate, and wraps around from the end surface to the peripheral portion of the upper surface of the substrate. At this time, if the outer peripheral edge of the substrate-facing surface is located outward from the outer peripheral edge of the substrate, the etchant that has wrapped around the end surface of the substrate can be captured well, and the peripheral edge of the upper surface of the substrate can be reliably captured. Can lead to.
10. Item 10. The substrate according to any one of Items 6 to 9, wherein the annular member has a convex portion (46, 68) that protrudes from the substrate-facing surface toward the substrate and regulates an etching solution toward the inside of the substrate. Perimeter processing device.

It is preferable that the said convex part is a convex line | wire continuous over the perimeter of the peripheral part of a board | substrate along the inner periphery of the said cyclic | annular member.
According to this configuration, it is possible to more reliably prevent the liquid film of the etching solution from entering the inner region of the substrate by the function of the convex portion. Thereby, the etching width accuracy can be further improved.
11. Item 11. The substrate periphery according to Item 10, wherein the convex portion has an etchant regulating surface (46a) formed of an inclined surface directed toward the outer side of the substrate as the distance from the substrate surface increases, on the outer side of the annular member. Processing equipment.

By forming an etching regulating surface comprising an inclined surface on the outer side of the substrate in the convex portion, the etching regulating surface follows the shape of the droplet of the etching solution. Thereby, it can prevent more reliably that etching liquid reaches the inner area | region of a board | substrate.
12 Item 12. The substrate peripheral processing according to any one of Items 6 to 11, wherein the annular member has an opening in the surface facing the substrate and has a liquid discharge path (95) communicating with an outer space of the annular member. apparatus.

According to this configuration, the etching liquid between the substrate facing surface and the surface of the peripheral edge portion of the substrate can be discharged to the space outside the annular member via the liquid discharge path.
For example, when the surface of the peripheral edge of the substrate is processed while rotating the substrate and the annular member, the centrifugal force acting on the etching solution that has entered the liquid discharge path is used to make the gap between the substrate facing surface and the substrate. The etching solution for forming the liquid film can be sucked out. Therefore, if the etching process is performed while supplying the etching solution between the substrate facing surface and the substrate continuously or intermittently, the excess etching solution between the substrate facing surface and the substrate passes through the liquid discharge path. Therefore, a new etching solution can be supplied to the liquid film. As a result, the etching ability of the etching solution can be maintained, so that the processing time can be shortened.

The liquid discharge path is preferably formed so as to open near the inner periphery of the annular member. In addition, the liquid discharge path may be formed so as to open on the surface facing the substrate in the convex portion. Further, it is preferable that the rotation speed of the annular member is larger than the rotation speed of the substrate holding member in order to promote the discharge of the etching solution through the liquid discharge path.
13. Item 13. The substrate periphery processing according to any one of Items 6 to 12, wherein the etching solution supply means includes a solution discharge path (86, 105) formed in the annular member and having an outlet opening in the substrate facing surface. apparatus.

According to this configuration, the etching solution can be directly and reliably supplied between the substrate facing surface and the peripheral portion of the substrate surface.
14 The etching solution supply means includes a discharge port that opens on the substrate facing surface, a liquid receiving portion (85, 107) communicating with the discharge port, and a nozzle (88, 108) that supplies the etching solution to the liquid receiving portion. 14. The substrate peripheral edge processing apparatus according to any one of Items 6 to 13, including:

With this configuration, by supplying the etching solution from the nozzle to the liquid receiving portion, the etching solution can be directly supplied between the substrate facing surface and the surface of the peripheral portion of the substrate. For example,
Even when the annular member rotates, the etching solution can be supplied with a simple configuration.
15. Item 15. The substrate peripheral processing apparatus according to Item 14, wherein the annular member is provided such that the substrate facing surface faces the substrate from above, and the liquid receiving portion is formed on an upper surface of the annular member. .
16. Item 13. The item according to any one of Items 1 to 12, wherein the etching solution supply unit includes a nozzle (5, 100) that supplies an etching solution toward a surface opposite to the surface of the substrate including the surface of the peripheral edge. Substrate periphery processing apparatus.

According to this configuration, the etching solution is supplied from the surface opposite to the surface of the peripheral portion of the substrate, which is the processing target region, and the etching solution travels around the end surface of the substrate and is guided to the surface of the peripheral portion. Here, a stable liquid film can be formed in cooperation with the annular member.
In order to guide the etching solution supplied to the surface on the opposite side to the surface of the peripheral portion, it is preferable to rotate the substrate and guide the etching solution supplied from the nozzle to the end surface of the substrate by centrifugal force. . Further, when the substrate is a circular substrate, the etching solution can be supplied more favorably to the surface of the peripheral portion of the substrate.
17. Item 17. The substrate peripheral processing apparatus according to Item 16, wherein the nozzle supplies an etching solution toward a central portion of the opposite surface.

The nozzle may supply an etching solution toward the vicinity of the peripheral edge of the opposite surface.
18. Item 13. The substrate peripheral processing apparatus according to any one of Items 1 to 12, wherein the etching solution supply means includes a nozzle (102) that supplies an etching solution toward the outer wall surface (48) of the annular member.

According to this configuration, the etching solution is guided to the peripheral portion of the substrate surface along the outer wall surface of the annular member, thereby forming a liquid film.
19. Any one of Items 1 to 18, wherein the etching solution supply means has a discharge port (100, 105) that discharges the etching solution in a direction perpendicular to the substrate surface or inclined outward of the substrate. A substrate peripheral edge processing apparatus according to claim 1.
20. Item 20. The substrate periphery processing apparatus according to any one of Items 1 to 19, wherein the annular member has an inner wall surface (47) rising from the inner periphery in a direction away from the surface of the substrate.

With this configuration, it is possible to reliably prevent the liquid film of the etching solution from entering the area inside the substrate further from the vicinity of the inner wall surface of the annular member. The inner wall surface may be a surface along the vertical, or an inclined surface inclined with respect to the horizontal.
21. Item 21. The substrate peripheral edge processing apparatus according to Item 20, wherein the inner wall surface is an inclined surface that moves toward the center side of the substrate as the distance from the surface of the substrate increases.

With this configuration, when the liquid film of the etching solution is directed toward the inner side of the substrate beyond the inner wall surface of the annular member, the liquid film is guided to the inner wall surface side of the annular member. Unable to go to the inner area of the substrate. Therefore, the existence range of the liquid film of the etching liquid can be controlled more accurately. In particular, when the annular member rotates, even if the etching solution is directed toward the inside of the substrate along the inner wall surface, the etching solution is pushed back to the outside of the substrate by the centrifugal force and gravity. Therefore, it is possible to more effectively prevent the etchant from entering the inner region of the substrate.
22. Item 22. The substrate peripheral edge processing apparatus according to any one of Items 1 to 21, further including a lid member (31, 90) that substantially closes a space inside the annular member.

According to this configuration, since the droplet or mist of the etching solution existing in the space outside the annular member does not reach the central region of the substrate beyond the annular member, the central region of the substrate is not damaged. The surface of the peripheral edge can be treated well. Moreover, the annular member and the peripheral surface of the substrate are sealed with a liquid film, and droplets or mist outside the annular member pass through the gap between the annular member and the peripheral surface of the substrate. There is no possibility of reaching the inner area. Therefore, the inner area of the substrate is reliably protected.

The lid member may be integrated with the annular member, or may be a member different from the annular member.
23. Item 23. The substrate periphery processing apparatus according to Item 22, wherein the annular member has an annular groove (51, 66) formed adjacent to the inner side of the inner periphery.
According to this configuration, the etching liquid cannot pass through the annular groove and reach the central region of the substrate, so that the etching width accuracy can be further improved.
24. Item 24. The substrate peripheral processing apparatus according to any one of Items 1 to 23, further comprising gas supply means (18, 30, 77) for supplying gas to the space inside the annular member.

With this configuration, the liquid film or droplet of the etching solution can be more reliably prevented from reaching the inner region of the substrate.
25. The annular member has an inner wall surface that rises from the inner peripheral edge in a direction away from the surface of the substrate, and the gas supplied from the gas supply means is supplied toward the inner wall surface. Item 25. A substrate peripheral edge processing apparatus according to Item 24.

According to this configuration, when gas is supplied toward the inner wall surface of the annular member, the gas then travels along the inner wall surface of the annular member toward the surface of the peripheral portion of the substrate. Thereby, it can prevent more reliably that the liquid film of etching liquid is guide | induced to the center area | region of a board | substrate.
26. Item 26. The substrate peripheral processing apparatus according to any one of Items 20 to 25, wherein the annular member has a gas flow passageway (49, 80) that allows communication between an inner space and an outer space of the annular member.

With this configuration, the pressure difference between the inside and outside of the annular member can be suppressed by allowing the gas to flow inside and outside the annular member via the gas flow passage. As a result, the pressure inside the annular member does not become excessively high compared to the pressure outside the annular member, and the liquid film of the etching solution formed on the surface of the peripheral portion of the substrate is not broken, and it is good on the entire periphery of the peripheral portion of the substrate. Etching process can be performed.
This configuration is particularly effective when the space inside the annular member is substantially closed by the lid member (see item 22).
27. Item 30. The substrate peripheral processing apparatus according to any one of Items 1 to 29, further comprising a protective liquid supply means (14) for supplying an etching protective liquid toward the center of the substrate inside the annular member.

According to this configuration, since the central portion of the substrate can be protected by the etching protection liquid, it is possible to more reliably prevent damage to the central region of the substrate.
The etching protection liquid may be, for example, pure water, carbonated water, hydrogen water, reduced water, ionic water or magnetic water.
28. A substrate peripheral processing method for supplying an etching solution to a peripheral surface of a substrate and etching away unnecessary materials on the peripheral surface, and holding the substrate in a stationary state so that the substrate is placed on the peripheral surface of the substrate. The step of depositing the etching solution, and the annular member having the inner periphery on or outside the outer periphery of the substrate can be brought into contact with the liquid film of the etching solution formed on the surface of the periphery of the substrate. And a step of defining a treatment width by the etching solution on the surface of the peripheral portion of the substrate by disposing the substrate in proximity to the surface of the peripheral portion of the substrate with a predetermined gap.

By this method, the same effect as that of the configuration described in item 3 can be obtained.
29. A substrate peripheral processing method for supplying an etchant to the peripheral surface of a substrate and etching away unnecessary materials on the peripheral surface, the substrate rotating step for rotating the substrate, and the substrate rotating step in parallel. An etching solution supply step for supplying an etching solution to the peripheral surface of the rotating substrate, and an annular member having an inner peripheral edge on or inside the outer peripheral edge of the substrate are formed on the peripheral surface of the substrate. The treatment width by the etching liquid on the surface of the peripheral edge of the substrate is defined by disposing it close to the surface of the peripheral edge of the substrate with a predetermined gap that can come into contact with the formed liquid film of the etching liquid. And a substrate peripheral processing method.

By this method, the same effect as that of the configuration described in item 5 can be obtained.
30. Item 30. The substrate peripheral processing method according to Item 29, wherein the etching solution supplying step includes a step of supplying an etching solution toward a surface opposite to the surface of the substrate including the surface of the peripheral portion.
By this method, the same effect as that of the configuration described in item 16 can be obtained.
31. Item 31. The substrate peripheral processing method according to any one of Items 28 to 30, further comprising a gas supply step of supplying a gas to a space inside the annular member.

By this method, the same effect as that of the configuration described in item 24 can be obtained.
32. Item 32. The substrate peripheral edge processing method according to any one of Items 28 to 31, further comprising a protective liquid supply step for supplying an etching protective liquid to a central region of the substrate inside the annular member.
By this method, the same effect as that of the configuration described in item 27 can be obtained.

DESCRIPTION OF SYMBOLS 1 Spin chuck 2 Rotation drive mechanism 3 Rotating shaft 4 Process liquid supply pipe 5 Center axis nozzle 6 Pure water supply valve 7 Etching liquid supply valve 8 Process gas supply path 9 Process gas supply valve 10 Shut-off plate 11 Shut-off plate raising / lowering drive mechanism 12 Motor DESCRIPTION OF SYMBOLS 13 Rotating shaft 14 Center axis nozzle 15 Pure water supply valve 16 Chemical liquid supply valve 17 Through hole 18 Process gas supply path 19 Process gas supply valve 20 Housing 21 Bearing 22 Process gas supply mechanism 23 Labyrinth member 24 Process gas inlet 25 Seal gas introduction Port 26 Process gas supply valve 27 Seal gas supply valve 28 Suction port 29 Flange 30 Process gas passage 31 Upper lid portion 32 Annular member 33 Center plate 34 Gas space 35 Gas nozzle 41 Chuck pin 42 Support portion 43 Guide pin 44 Jack pin driving mechanism 45 Wafer facing surface 45a Outer peripheral side parallel portion 45b Inner peripheral side parallel portion 45c Inclined portion 46 Guide edge portion 46a Etching solution regulating surface 46b Wafer facing portion 47 Inner wall surface 47a Vertical rising surface 47b Inclined surface 48 Outer wall surface 49 Degassing Channel 50 Liquid film 51 Annular groove 52 Chamfered portion 60 Blocking plate 61 Receive pin 62 Through hole 63 Lower surface 64 Through hole 65 Annular portion 66 Annular groove 67 Wafer facing surface 68 Guide edge portion 69 Inner wall surface 70 Outer wall surface 71 Flange pipe 72 Blocking plate Flange 73 Cut-off side labyrinth member
74 Nozzle-side labyrinth member 75 Center axis nozzle 76 Processing liquid supply pipe 77 Process gas supply pipe 78 Nozzle holding part 79 Nozzle lifting drive mechanism 80 Degassing path 81 Hand for blocking plate 82 Drive mechanism for blocking plate 83 Hand pin 85 Liquid receiving groove 86 Treatment liquid supply path 88 Moving nozzle 89 Etching liquid supply valve 90 Lid part 95 Liquid drainage path 100 Nozzle 101 Nozzle 102 Nozzle 105 Etching liquid supply path 107 Liquid receiving part 108 Etching liquid supply nozzle 110 Liquid receiving part 111 Nozzle 112 Liquid supply path 115 Etching liquid supply path 116 Drainage path 441 Spin base 442 Link mechanism 443 Drive mechanism 444 Rotational drive force transmission member 445 Bearing 446 Fixed drive force transmission member 447 Elevating drive mechanism for chuck pin drive E Etching solution W C Ha

Claims (4)

A substrate peripheral processing apparatus for supplying an etching solution to the surface of the peripheral portion of the substrate and etching away unnecessary materials on the surface of the peripheral portion,
Etching solution supply means for supplying an etching solution to the peripheral edge of the substrate;
The substrate is arranged so as to be close to the peripheral surface of the substrate with a predetermined gap that can come into contact with the liquid film of the etching solution formed on the peripheral surface. An annular member having an inner peripheral edge on the inner side and defining a treatment width by an etching solution on the surface of the peripheral edge of the substrate;
A lid member that substantially closes the space inside the annular member;
Gas supply means for supplying gas to the space inside the annular member;
A substrate peripheral edge processing apparatus comprising: A substrate peripheral processing method of supplying an etching solution to the surface of the peripheral portion of the substrate and etching away unnecessary materials on the surface of the peripheral portion,
An etching solution supply step of supplying an etching solution to the peripheral surface of the substrate;
The annular member having an inner peripheral edge disposed on or inside the outer peripheral edge of the substrate with a predetermined gap that can contact the liquid film of the etching solution formed on the surface of the peripheral edge of the substrate. The step of defining the treatment width by the etching liquid on the surface of the peripheral portion of the substrate by being disposed close to the surface of the peripheral portion of
Substantially closing the space inside the annular member with a lid member;
And a gas supply step of supplying a gas to the space inside the annular member.   The substrate peripheral processing method according to claim 2, wherein the etching solution supplying step includes a step of holding the substrate in a stationary state and depositing the etching solution on the surface of the peripheral portion of the substrate. A substrate rotation step of rotating the substrate;
3. The substrate peripheral processing method according to claim 2, wherein the etching liquid supplying step includes a step of supplying an etching liquid to the surface of the peripheral portion of the rotating substrate in parallel with the substrate rotating step. .

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