JP2014086598A - Method of manufacturing semiconductor device, semiconductor device, and photosensitive resin composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of manufacturing efficiently a semiconductor device subjected to rewiring formation while thinning.SOLUTION: In the method of manufacturing a semiconductor device, while performing the sealing of a semiconductor element 3 and the formation of a first insulating layer 4 collectively in a sealing step, the opposite surface S2 of the semiconductor element 3 can be exposed easily in a peeling step. Consequently, when compared with a conventional method of manufacturing a semiconductor device, a semiconductor device 100 subjected to rewiring formation can be manufactured efficiently while thinning.

Description

  The present invention relates to a method for manufacturing a semiconductor device, a semiconductor device obtained by the manufacturing method, and a photosensitive resin composition used in the method.

  As electronic devices become more sophisticated, semiconductor devices are becoming smaller and thinner. In recent years, semiconductor devices have become lighter, thinner, and smaller, and there are prominent mounting forms such as wafer-level semiconductor devices that are almost the same size as semiconductor elements, and package-on-packages in which semiconductor devices are stacked on top of semiconductor devices. In the future, it is expected that semiconductor devices will be further reduced in size and thickness.

  By the way, a wafer level semiconductor device is provided with a rewiring layer used when forming a wiring pattern for drawing a circuit of a semiconductor wafer to the outside, and after providing a terminal for external connection such as a solder ball, it is separated by dicing. It can be obtained by separating. When the number of terminals is about several tens to 100 pins, external connection terminals such as solder balls can be provided on the semiconductor wafer.

  However, if miniaturization of semiconductor elements progresses and the number of terminals increases to 100 pins or more, it becomes difficult to form a redistribution layer only on a semiconductor wafer and provide terminals for external connection. When the terminals for external connection are forcibly provided, the pitch between the terminals is reduced and the height of the terminals is reduced, so that it is difficult to ensure connection reliability after mounting the semiconductor device. For this reason, it is required to cope with miniaturization of semiconductor elements, that is, increase in the number of external connection terminals. Recently, development of a semiconductor device in which a semiconductor wafer can be provided on the outside of a semiconductor element by separating the semiconductor wafer into a predetermined size and rearranging the semiconductor wafer (for example, Patent Documents 1 to 3) is underway. 4).

Japanese Patent No. 3616615 JP 2001-244372 A Japanese Patent Laid-Open No. 2001-127095 US Patent Application Publication No. 2007/205513

  In the semiconductor devices described in Patent Documents 1 to 4, the semiconductor wafer is separated into a predetermined size, and the separated semiconductor elements are rearranged, so that a wiring pattern is formed on the semiconductor wafer and rewiring is performed. In addition, a wide rewiring area can be secured, and it becomes possible to cope with the increase in the number of pins of the semiconductor element.

  6 to 11 are views showing a conventional method for manufacturing a semiconductor device. A semiconductor device 200 shown in FIG. 11B has a rewiring (wiring pattern 18) in an opening provided in an insulating layer pattern 15a that is a rewiring layer. Arrangement, sealing (sealing of the semiconductor element 13 with the sealing material 14), rewiring layer formation (formation of the insulating layer pattern 15a), rewiring formation (formation of the wiring pattern 18), formation of external connection terminals (solder) Ball 21) and singulation.

  The semiconductor device 200 is manufactured through the following procedure. First, after the temporary fixing film 12 is bonded to one side of the support 11 (see FIG. 6A), the semiconductor element 13 is placed at a predetermined interval between the circuit surface S1 of the semiconductor element 13 and the temporary fixing film 12. Are rearranged so as to be attached (see FIG. 6B). Next, the semiconductor element 13 is sealed with a sealing material 14 so as to cover a surface S2 opposite to the circuit surface S1 of the semiconductor element 13 (see FIG. 6C). After sealing, post-curing is performed at a predetermined temperature and time.

  Next, after placing on a hot plate set at a predetermined temperature and peeling the support 11 from the temporary fixing film 12 (see FIG. 7A), the temporary fixing film 12 is peeled off from the semiconductor element 13 and the semiconductor. The circuit surface S1 of the element 13 is exposed (see FIG. 7B). Next, a coating type photosensitive resin composition is applied onto the circuit surface S1 of the semiconductor element 13 by spin coating, and then dried on a hot plate to form the insulating layer 15 (see FIG. 8A). Next, a predetermined portion of the insulating layer 15 is exposed and developed to form an insulating layer pattern 15a and post-cured in an oven (see FIG. 8B).

  Next, the seed layer 16 is formed on the surface of the insulating layer pattern 15a by sputtering (see FIG. 9A). A circuit forming resist is laminated on the seed layer 16, and a predetermined portion is exposed and developed to form a resist pattern 17 (see FIG. 9B). Next, a wiring pattern 18 is formed on the exposed seed layer 16 by electroplating (see FIG. 9C). Next, the resist pattern 17 is removed with a stripping solution (see FIG. 10A). Next, the exposed seed layer 16 is removed by etching (see FIG. 10B). Next, the photosensitive resin composition is applied again by spin coating, dried on a hot plate at about 80 ° C., and a predetermined portion is exposed and developed to form an insulating layer pattern 19 made of the photosensitive resin composition. Then, it is post-cured in an oven (see FIG. 11A). Next, the solder balls 21 are mounted by reflow. Finally, by dicing into individual pieces, the semiconductor device 200 on which rewiring is formed can be manufactured (see FIG. 11B).

  Since the semiconductor device 200 obtained in this manner can be reduced in size and thickness, it is suitable for electronic devices such as smartphones and tablet terminals that are becoming increasingly functional and multifunctional. However, the semiconductor device 200 manufactured by such a method has problems such as a complicated manufacturing process and difficulty in dealing with further thinning.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device that can be efficiently manufactured while reducing the thickness of the rewiring-formed semiconductor device. Another object of the present invention is to provide a semiconductor device manufactured by the above method and a photosensitive resin composition suitable for manufacturing the semiconductor device.

  In order to solve the above-described problems, a method for manufacturing a semiconductor device according to the present invention includes sealing a semiconductor element with a sealing material, forming an insulating layer on a circuit surface of the semiconductor element, and providing the insulating layer on the insulating layer. A method of manufacturing a semiconductor device comprising a wiring pattern formed in an opening, wherein at least one semiconductor element is placed on a support so that the opposite side of the circuit surface of the semiconductor element faces the support. A sealing step for sealing the circuit surface of the semiconductor element by forming an insulating layer with an insulating photosensitive resin composition serving as a sealing material on the circuit surface of the semiconductor element. A step of forming an opening from the surface of the insulating layer to the circuit surface of the semiconductor element by performing an exposure process and a developing process on the insulating layer; and peeling the support from the semiconductor element; On the other side A peeling step of, characterized by comprising a.

  The method for manufacturing a semiconductor device includes an arrangement step of disposing at least one or more semiconductor elements on a support so that the opposite side of the circuit surface of the semiconductor element faces the support, A sealing step for sealing the circuit surface of the semiconductor element and a support are peeled from the semiconductor element by forming an insulating layer with an insulating photosensitive resin composition serving as a sealing material on the circuit surface. And a peeling step for exposing the opposite surface of the semiconductor element. Accordingly, the opposite surface of the semiconductor element can be easily exposed in the peeling process while performing the sealing of the semiconductor element and the formation of the insulating layer all together in the sealing process. Therefore, as compared with the conventional method for manufacturing a semiconductor device shown in FIGS. 6 to 11, the rewiring formed semiconductor device can be efficiently manufactured while reducing the thickness. Further, according to the above manufacturing method, compared with the semiconductor device shown in FIG. 11B, since the opposite surface of the semiconductor element is not sealed, a semiconductor device with improved heat dissipation while suppressing warpage is manufactured. can do.

  Moreover, it is preferable to further include a step of forming a temporary fixing layer for temporarily fixing the semiconductor element and the support on the surface of the support as a pre-process of the arrangement step. Thereby, since a semiconductor element and a support body are temporarily fixed, the reliability at the time of manufacturing a semiconductor device can be improved.

  As a subsequent process of the opening forming process, it is preferable to further include a process of forming a seed layer serving as a base of the wiring pattern on the insulating layer. Thus, a wiring film having a certain thickness can be formed by growing a metal film on the surface of the seed layer.

  In the sealing step, it is preferable that the temperature of the photosensitive resin composition is 50 to 120 ° C. and the sealing time is 10 to 300 seconds. When the temperature is 50 ° C. or higher, it becomes easy to fill the circuit surface of the semiconductor element with the photosensitive resin composition, and when the temperature is 120 ° C. or lower, the support layer (PET) of the photosensitive resin film is easily peeled after sealing. . Further, when the sealing time is 10 seconds or more, it becomes easy to fill the circuit surface of the semiconductor element with the photosensitive resin composition, and when the sealing time is 300 seconds or less, the productivity is improved, so that the cost can be reduced. .

In the sealing step, it is preferable to 50~750μm the thickness _{T 2} of the insulating layer. When the thickness T ₂ of the insulating layer and above 50 [mu] m, it becomes easy to forming the photosensitive resin composition can be easily produced a film of the photosensitive resin composition used for the manufacture of semiconductor devices. When the thickness T ₂ of the insulating layer and less 750 [mu] m, can reduce the thickness of the semiconductor device obtained.

In the sealing step, a difference (T ₂ −T ₁ ) between the thickness T ₂ of the insulating layer and the thickness T _{1 of the} semiconductor element is preferably 5 to 50 μm. When (T ₂ -T ₁ ) is 5 μm or more, an insulating layer having a uniform thickness can be formed on the semiconductor element, and when (T ₂ -T ₁ ) is 50 μm or less, exposure processing and development processing are performed. This makes it easier to provide fine openings.

  Further, the semiconductor device according to the present invention is obtained by the method described above. According to such a semiconductor device, unlike the conventional semiconductor device formed with rewiring shown in FIG. 11B, the opposite surface is not sealed, so that the thickness can be reduced and the warpage can be suppressed. However, heat dissipation can be improved.

  In addition, the photosensitive resin composition according to the present invention is used in the above method, and (a) a resin containing a carboxyl group and an ethylenically unsaturated group, (b) a photopolymerization initiator, and (c) a thermosetting agent. And (d) a photosensitive resin composition containing an inorganic filler having a maximum particle size of 5 μm or less and an average particle size of 1 μm or less. By forming an insulating layer using such a photosensitive resin composition, the surface of the opening formed by developing and exposing the insulating layer becomes smooth, and a seed layer can be easily formed on the opening. . Moreover, the photosensitive resin film which concerns on this invention is obtained by drying, after apply | coating the said photosensitive resin composition on a support body.

  According to the present invention, it is possible to efficiently manufacture a semiconductor device formed with rewiring while reducing the thickness. Moreover, according to this invention, the photosensitive resin composition suitable for manufacturing the semiconductor device manufactured by the said method and a semiconductor device can be provided.

It is a figure which shows the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. FIG. 2 is a diagram showing a step subsequent to FIG. 1. FIG. 3 is a diagram showing a step subsequent to FIG. 2. FIG. 4 is a diagram showing a step subsequent to FIG. 3. It is a figure which shows the manufacturing method of the semiconductor device which concerns on other embodiment of this invention. It is a figure which shows the manufacturing method of the conventional semiconductor device. FIG. 7 is a diagram showing a step subsequent to FIG. 6. FIG. 8 is a diagram showing a step subsequent to FIG. 7. FIG. 9 is a diagram showing a step subsequent to that in FIG. 8. FIG. 10 is a diagram showing a step subsequent to FIG. 9. FIG. 11 is a diagram showing a step subsequent to FIG. 10.

  Hereinafter, preferred embodiments of a method for manufacturing a semiconductor device according to the present invention will be described in detail with reference to the drawings.

  In the following description, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

  In the method for manufacturing a semiconductor device according to this embodiment, a semiconductor element is sealed with a sealing material, an insulating layer is formed on a circuit surface of the semiconductor element, and a wiring pattern is formed in an opening provided in the insulating layer. The method of manufacturing a semiconductor device is particularly suitable in the form of a wafer level semiconductor device that is becoming smaller and thinner.

  First, a temporary fixing layer for temporarily fixing the semiconductor element and the support 1 is formed on the surface of the support 1. That is, as shown in FIG. 1A, a temporary fixing film 2 having adhesiveness as a temporary fixing layer is attached to one surface of the support 1 by lamination. The material of the support 1 is not particularly limited, but a SUS (stainless steel) plate, a silicon wafer, or the like can be suitably used in that the dimensional change due to heat is small. The thickness of the support 1 is not particularly limited, but a thickness of 0.5 mm or more capable of suppressing warpage is preferable. The temporary fixing film 2 is not particularly limited, and any commercially available material may be used. When heat resistance is required for the temporarily fixing film, for example, an amide bond or an imide obtained by a polycondensation reaction between a diamine compound described in JP 2010-254808 A and an aromatic polycarboxylic acid compound A polymer film having a specific structure having a bond can be used.

  Next, as shown in FIG. 1B, a plurality of semiconductor elements 3 obtained by separating a semiconductor wafer on the support 1 are placed on the opposite surface S2 side of the circuit surface S1 in the semiconductor element 3 and the support. 1 are rearranged at predetermined intervals (5 mm to 20 mm) so as to face each other (arrangement step). In the arranging step, the support 1 and the semiconductor element 3 are bonded via the temporary fixing film 2. The size of the semiconductor element 3 is, for example, 3 mm to 15 mm square, and the height is 0.03 mm to 0.7 mm.

  Next, as shown in FIG. 1C, the first insulating layer 4 is formed on the circuit surface S <b> 1 of the plurality of semiconductor elements 3 with an insulating photosensitive resin composition serving as a sealing material, The circuit surface S1 of the semiconductor element 3 is sealed (sealing process).

  In the sealing step, the temperature of the photosensitive resin composition is preferably 50 to 120 ° C, more preferably 70 to 100 ° C. By making the temperature 50 ° C. or higher, it becomes easy to fill the circuit surface S1 of the semiconductor element 3 with the photosensitive resin composition, and by setting the temperature to 120 ° C. or lower, the support layer ( PET) is easily peeled off. In the sealing step, the sealing time of the photosensitive resin composition is preferably 10 to 300 seconds, and preferably 30 to 120 seconds. If the sealing time is 10 seconds or more, it becomes easy to fill the circuit surface S1 of the semiconductor element 3 with the photosensitive resin composition, and if the sealing time is 300 seconds or less, the productivity is improved and the cost can be reduced. .

  The photosensitive resin composition may be liquid or film-like, but in order to control the thickness of the first insulating layer 4 with high accuracy, a film-like one whose thickness is controlled in advance is preferably used. Can do. When the photosensitive resin composition is in the form of a film, the first insulating layer 4 is formed by bonding to the circuit surface S1 of the semiconductor element 3 with a known vacuum laminator, roll laminator, press, or the like. When the photosensitive resin composition is in a liquid state, the first insulating layer 4 is formed on the circuit surface S <b> 1 of the semiconductor element 3 by applying it with screen printing or a spin coater and then drying it with a hot plate.

  When the photosensitive resin composition is in the form of a film, the sealing pressure of the photosensitive resin composition is preferably 0.2 to 2.0 MPa, and preferably 0.2 to 1.0 MPa in the sealing step. Is preferred. When the sealing pressure is 0.2 MPa or more, it becomes easy to fill the circuit surface S1 of the semiconductor element 3 with the photosensitive resin composition, and when the sealing pressure is 2.0 MPa or less, the circuit surface S1 of the semiconductor element 3 is placed on the circuit surface S1. The first insulating layer 4 having a sufficient thickness can be formed. When the photosensitive resin composition is in a liquid state, the screen printing conditions in the sealing process, the rotation speed of the spin coater, and the temperature of the hot plate are not particularly limited, but the photosensitive resin composition is formed on the circuit surface S1 of the semiconductor element 3. It is preferable to select the conditions under which the product is uniformly applied.

In the sealing step, the thickness T ₂ of the first insulating layer 4 is preferably 50 to 750 μm, and more preferably 100 to 500 μm (see FIG. 1C). When the thickness T ₂ of the first insulating layer 4 and above 50 [mu] m, it becomes easy to forming a photosensitive resin composition, it can be easily produced a film of the photosensitive resin composition used for the manufacture of a semiconductor device it can. When the thickness T ₂ of the first insulating layer 4 or less 750 [mu] m, can reduce the thickness of the semiconductor device obtained.

The difference (T ₂ −T ₁ ) between the thickness T _{2 of} the first insulating layer 4 and the thickness T ₁ of the semiconductor element is preferably 5 to 50 μm, more preferably 10 to 30 μm (FIG. 1B). ) And (c)). When (T ₂ -T ₁ ) is 5 μm or more, an insulating layer having a uniform thickness can be formed on the semiconductor element 3. When (T ₂ -T ₁ ) is 50 μm or less, exposure processing and development processing are performed. It becomes easy to provide a fine opening.

  After the photosensitive resin composition is applied to the circuit surface S1 of the semiconductor element 3, post-curing is performed at a predetermined temperature and time. The curing temperature is not particularly limited, but is preferably 120 to 200 ° C, and more preferably 150 to 180 ° C. The time for post-curing is not particularly limited, but is preferably 15 to 180 minutes, and more preferably 30 to 120 minutes.

Next, the first insulating layer 4 is irradiated with actinic rays through a mask pattern to expose a portion of the first insulating layer 4 where no opening is to be formed later, and a part of the first insulating layer 4 is exposed. Is photocured (exposure process in the opening forming step). A known light source can be used as the actinic ray light source. For example, a light source that effectively emits ultraviolet rays, such as a carbon arc lamp, a mercury vapor arc lamp, an ultrahigh pressure mercury lamp, a high pressure mercury lamp, and a xenon lamp can be used. Further, direct drawing direct laser exposure may be used. Although an exposure amount changes with compositions of the apparatus to be used and the photosensitive resin composition, Preferably it is 10-600 mJ / cm < ² >, More preferably, it is 20-400 mJ / cm < ² >. When the exposure amount is 10 mJ / cm ² or more, it can be sufficiently photocured, and when the exposure amount is 600 mJ / cm ² or less, the photocuring does not become excessive, and the opening formed in the first insulating layer 4 The shape of 4h can be stabilized.

Next, by removing the first insulating layer 4 other than the exposed portion by development, an opening from the surface 4s of the first insulating layer 4 to the circuit surface S1 of the semiconductor element 3 as shown in FIG. 4h is provided to form the first insulating layer pattern 4a (development process in the opening forming step). Diameter _{R 4} of the opening 4h provided on the first insulating layer 4 is, for example, 10 m - 100 m, the depth _{D 4} is 5 m to 100 m. However, the shape of the opening 4h may not be circular. As a developer used at this time, for example, an alkali developer such as a dilute solution (1 to 5% by mass aqueous solution) of sodium carbonate at 20 ° C. to 50 ° C. is used for spraying, rocking immersion, brushing, scraping, etc. It can develop by the method of this.

  After the opening 4h is provided in the first insulating layer 4, it is placed on a hot plate set at a predetermined temperature, and the support 1 is peeled from the temporary fixing film 2 as shown in FIG. Next, as shown in FIG. 2C, the temporary fixing film 2 is peeled from the semiconductor element 3 to expose the opposite surface S2 of the semiconductor element 3 (peeling step). The temperature of the hot plate is not particularly limited, and a temperature at which the support 1 and the temporary fixing film 2 can be easily peeled can be selected.

  Next, as shown in FIG. 2D, the surface 4s of the portion where the opening 4h is not provided, the wall surface 4w of the first insulating layer pattern 4a and the circuit surface of the semiconductor element 3 in the portion where the opening 4h is provided. A seed layer 5 is provided at S1 (seed layer forming step). The seed layer 5 is a layer that becomes a base of the wiring pattern 7 and is a layer made of copper. The thickness of the seed layer 5 is not particularly limited, but is preferably 0.1 to 1.0 μm. The seed layer 5 can be formed by electroless copper plating or sputtering. Various formation layers can be selected, for example, titanium (Ti) is vapor-deposited before copper is vapor-deposited.

  After forming the seed layer 5, a circuit forming resist is laminated so as to cover the seed layer 5, and actinic rays are irradiated through the mask pattern, thereby exposing a portion of the circuit forming resist where openings are not formed later to expose the circuit. A part of the forming resist is photocured (exposure processing in a resist pattern forming step).

A known light source can be used as the actinic ray light source. For example, a light source that effectively emits ultraviolet rays, such as a carbon arc lamp, a mercury vapor arc lamp, an ultrahigh pressure mercury lamp, a high pressure mercury lamp, and a xenon lamp can be used. Further, direct drawing direct laser exposure may be used. The amount of exposure varies depending on the apparatus used and the composition of the resist for circuit formation, but is preferably 10 to 600 mJ / cm ² , more preferably 20 to 400 mJ / cm ² . When the exposure amount is 10 mJ / cm ² or more, sufficient photocuring can be performed, and when the exposure amount is 600 mJ / cm ² or less, the photocuring does not become excessive, and the shape of the opening of the resist for circuit formation is reduced. It can be stabilized. The resist for circuit formation can be either liquid or film. In the case of a liquid, it can be applied using a printing machine, and in the case of a film, it can be attached using a roll laminator or a vacuum laminator.

  Next, the resist for circuit formation other than the exposed portion is removed by development to form a resist pattern 6 (6a, 6b, 6c, 6d, 6e) on the surface of the seed layer 5 as shown in FIG. (Development process in resist pattern forming step). As the developer used at this time, for example, an alkaline developer such as a dilute solution of sodium carbonate (1 to 5% by mass aqueous solution) at 20 to 50 ° C. is used, and spraying, rocking immersion, brushing, scraping, etc. Development is performed by a known method.

  Next, as shown in FIG. 3B, a copper wiring pattern 7 is formed by electroplating so as to cover the exposed seed layer 5. In the present embodiment, the wiring pattern 7 is formed between the adjacent resist patterns 6. That is, the wiring pattern 7 is formed between the resist pattern 6a and the resist pattern 6b, between the resist pattern 6b and the resist pattern 6c, and between the resist pattern 6c and the resist pattern 6d. When the wiring pattern 7 is formed, the opening 4h is filled with copper in a portion where the opening 4h is provided. The thickness of the wiring pattern 7 is preferably 1 to 20 μm. After forming the wiring pattern 7, as shown in FIG. 3C, the resist pattern 6 is stripped and removed by a stripping solution (resist pattern removing step).

  After removing the resist pattern 6, as shown in FIG. 3D, the seed layer 5 exposed on the surface is removed with an etching solution (seed layer removing step).

After removing the seed layer 5, as shown in FIG. 4A, a second insulating layer made of a photosensitive resin composition is formed so as to cover the wiring pattern 7, and an exposure process and a development process are performed. Thus, an opening 8h extending from the surface 8s of the second insulating layer to the wiring pattern 7 is provided to form the second insulating layer pattern 8 (second opening forming step). Diameter _{R 8} of the opening 8h provided in the second insulating layer is, for example, 100Myuemu～500myuemu, the depth _{D 8} is 5 m to 50 m. However, the shape of the opening 8h may not be circular.

  Next, as shown in FIG. 4B, a plating process is performed on the wiring pattern 7 exposed from the opening 8h using an electroless nickel plating / gold plating solution to form a nickel / gold layer 9. The thickness of the nickel / gold layer 9 is not particularly limited, but it is preferable that the nickel layer has a thickness of 1 to 10 μm and the gold layer has a thickness of about 0.1 μm.

  Next, as shown in FIG. 4C, a conductive material as the external connection terminal 10 is formed on the nickel / gold layer 9 (terminal formation step). The conductive material is not particularly limited, but it is preferable to use Sn-Ag or Sn-Ag-Cu solder from the viewpoint of environmental protection. As the conductive material, a Cu post may be formed using a circuit forming resist. Through these steps, the semiconductor device 20 before being separated is formed.

  Next, according to the size of the semiconductor element 3, the semiconductor device 20 before being separated into pieces is separated into pieces by a dicer to form a semiconductor device 100 device as shown in FIG.

(Photosensitive resin composition)
Next, although the photosensitive resin composition used for manufacture of the above-mentioned semiconductor device is explained in detail, the present invention is not limited to these resin compositions.

  The photosensitive resin composition according to this embodiment includes (a) a resin containing a carboxyl group and an ethylenically unsaturated group, (b) a photopolymerization initiator, (c) a thermosetting agent, and (d) an inorganic filler. It is preferable to include an inorganic filler having a maximum particle size of 5 μm or less and an average particle size of 1 μm or less. (D) As the maximum particle size of the inorganic filler is smaller, the first insulating layer 4 is formed using such a photosensitive resin composition, whereby the first insulating layer 4 is developed and exposed. The wall surface 4w of the opening 4h formed is smooth, and the seed layer 5 is easily formed on the opening 4h.

  Further, (d) the maximum particle size of the inorganic filler is more preferably 1 μm or less. The average particle diameter is more preferably 400 nm or less from the viewpoint of resolution, and still more preferably 100 nm or less.

  (A) As a resin containing a carboxyl group and an ethylenically unsaturated group, for example, an esterified product of an epoxy compound (a1) and an unsaturated monocarboxylic acid (a2) is saturated or unsaturated polybasic acid anhydride (a3 An addition reaction product to which is added) can be used.

  These can be obtained by the following two-step reaction. In the first reaction (hereinafter referred to as “first reaction” for convenience), the epoxy compound (a1) and the unsaturated monocarboxylic acid (a2) react. In the next reaction (hereinafter referred to as “second reaction” for convenience), the esterified product produced in the first reaction reacts with the saturated or unsaturated polybasic acid anhydride (a3).

  Although there is no restriction | limiting in particular as said epoxy compound (a1), For example, a bisphenol type epoxy compound, a novolak type epoxy compound, a biphenyl type epoxy compound, a polyfunctional epoxy compound etc. are mentioned. As the bisphenol type epoxy compound, those obtained by reacting bisphenol A type or bisphenol F type with epichlorohydrin are suitable. GY-260, GY-255, XB-2615 manufactured by Ciba Geigy Corp., Epicoat manufactured by Japan Epoxy Resin Co., Ltd. Suitable are bisphenol A type such as 828, 1007, and 807, bisphenol F type, hydrogenated bisphenol A type, amino group-containing, alicyclic or polybutadiene-modified epoxy compounds.

  As a novolak type epoxy compound, it can be obtained by reacting at least one kind selected from phenols such as phenol, cresol, halogenated phenol and alkylphenol with formaldehyde and an novolak and epichlorohydrin. Are suitable, YDCN-701, 704, YDPN-638, 602 manufactured by Tohto Kasei Co., Ltd., DEN-431, 439 manufactured by Dow Chemical Company, EPN-1299 manufactured by Ciba Geigy Co., Ltd., N manufactured by Dainippon Ink & Chemicals, Inc. -730, 770, 865, 665, 673, VH-4150, 4240, Nippon Kayaku Co., Ltd. EOCN-120, BREN, etc. are mentioned.

  Examples of epoxy compounds having other structures include salicylaldehyde-phenol or salicylaldehyde-cresol type epoxy compounds (EPPN502H, FAE2500, etc., manufactured by Nippon Kayaku Co., Ltd.), DER-330, 337, 361, manufactured by Dow Chemical Co., Ltd. Chemical Industry Co., Ltd. Celoxide 2021, Mitsubishi Gas Chemical Co., Ltd. TETRAD-X, C, Nippon Soda Co., Ltd. EPB-13, 27, etc. can also be used. These may be used alone or in combination of two or more, and a mixture or a block copolymer may be used.

  Examples of the unsaturated monocarboxylic acid (a2) include (meth) acrylic acid, crotonic acid, cinnamic acid, and saturated or unsaturated polybasic acid anhydrides and (meth) acrylates having one hydroxyl group in one molecule. Or the reaction material of the half-ester compound of a saturated or unsaturated dibasic acid and an unsaturated monoglycidyl compound is mentioned. Examples of the reactant include phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, maleic acid, succinic acid, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, and tris (hydroxyethyl) isocyanurate. Examples thereof include reactants obtained by reacting di (meth) acrylate, glycidyl (meth) acrylate and the like in an equimolar ratio by a conventional method. These unsaturated monocarboxylic acids can be used alone or in combination. Among these, acrylic acid is preferable.

  Examples of the saturated or unsaturated polybasic acid anhydride include succinic anhydride, maleic anhydride, tetrahydrophthalic anhydride, phthalic anhydride, methyltetrahydrophthalic anhydride, ethyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, methylhexa Examples include hydrophthalic anhydride, ethylhexahydrophthalic anhydride, itaconic anhydride, and trimellitic anhydride.

  In the first reaction, a hydroxyl group is generated by an addition reaction between the epoxy group of the epoxy compound (a1) and the carboxyl group of the unsaturated monocarboxylic acid (a2). In the first reaction, the ratio of the epoxy compound (a1) to the unsaturated monocarboxylic acid (a2) is such that the unsaturated monocarboxylic acid (a2) is 0.1% with respect to 1 equivalent of the epoxy group of the epoxy compound (a1). The ratio is preferably 7 to 1.05 equivalent, and more preferably 0.8 to 1.0 equivalent.

  The epoxy compound (a1) and the unsaturated monocarboxylic acid (a2) can be reacted by dissolving in an organic solvent. Examples of the organic solvent include ketones such as ethyl methyl ketone and cyclohexanone, aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene, methyl cellosolve, butyl cellosolve, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether, Glycol ethers such as dipropylene glycol monoethyl ether, dipropylene glycol diethyl ether and triethylene glycol monoethyl ether, esters such as ethyl acetate, butyl acetate, butyl cellosolve acetate and carbitol acetate, aliphatic carbonization such as octane and decane Hydrogen and petroleum solvents such as petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha, and solvent naphtha can be used.

  In the first reaction, it is preferable to use a catalyst in order to accelerate the reaction. As the catalyst, for example, triethylamine, benzylmethylamine, methyltriethylammonium chloride, benzyltrimethylammonium chloride, benzyltrimethylammonium bromide, benzyltrimethylammonium iodide, triphenylphosphine, and the like can be used. It is preferable that the usage-amount of a catalyst shall be 0.1-10 mass parts with respect to a total of 100 mass parts of an epoxy compound (a1) and unsaturated monocarboxylic acid (a2).

  In the first reaction, in order to prevent polymerization between the epoxy compounds (a1) or between the unsaturated monocarboxylic acids (a2) or between the epoxy compound (a1) and the unsaturated monocarboxylic acid (a2), a polymerization inhibitor is used. It is preferable to use it. As the polymerization inhibitor, for example, hydroquinone, methyl hydroquinone, hydroquinone monomethyl ether, catechol, and pyrogallol can be used. It is preferable that the usage-amount of a polymerization inhibitor shall be 0.01-1 mass part with respect to a total of 100 mass parts of an epoxy compound (a1) and unsaturated monocarboxylic acid (a2). 60-150 degreeC is preferable and, as for the reaction temperature of a 1st reaction, 80-120 degreeC is more preferable.

  In the first reaction, an unsaturated monocarboxylic acid (a2) and a polybasic acid anhydride such as trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic anhydride, biphenyltetracarboxylic anhydride, etc., if necessary Can be used in combination.

  In the second reaction, when the hydroxyl group formed in the first reaction and the hydroxyl group originally present in the epoxy compound (a1) undergo a half-ester reaction with the acid anhydride group of the saturated or unsaturated polybasic acid anhydride (a3). Inferred. Here, 0.1-1.0 equivalent of polybasic acid anhydride (a3) can be reacted with 1 equivalent of hydroxyl group in the resin obtained by the first reaction. By adjusting the amount of the polybasic acid anhydride (a3) within this range, the acid value of the component (a) can be adjusted.

  (A) As resin containing a carboxyl group and an ethylenically unsaturated group, CCR-1219H, CCR-1218H, CCR-1159H, CCR-1222H, PCR-1050, TCR-1335H, ZAR-1035, ZAR-2001H ZFR-1185 and ZCR-1569H (Nippon Kayaku Co., Ltd., trade name) are commercially available.

  The (b) photopolymerization initiator is not particularly limited as long as it matches the light wavelength of the exposure machine to be used, and known ones can be used. Specifically, benzophenone, N, N′-tetraalkyl-4,4′-diaminobenzophenone, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1, 2-methyl-1 -[4- (methylthio) phenyl] -2-morpholino-propanone-1,4,4'-bis (dimethylamino) benzophenone (Michler ketone), 4,4'-bis (diethylamino) benzophenone, 4-methoxy-4 ' -Aromatic ketones such as dimethylaminobenzophenone, quinones such as alkylanthraquinone and phenanthrenequinone, benzoin compounds such as benzoin and alkylbenzoin, benzoin ether compounds such as benzoin alkyl ether and benzoin phenyl ether, and benzyl derivatives such as benzyldimethyl ketal 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer, 2- (o-chlorophenyl) -4,5-di (m-methoxyphenyl) imidazole dimer, 2- (o-fluorophenyl) -4,5-diphenylimidazole dimer, 2- (o-methoxyphenyl) -4,5-diphenylimidazole dimer, 2,4-di (p-methoxyphenyl) -5-phenylimidazole dimer, 2,4,5-triarylimidazole dimer such as 2- (2,4-dimethoxyphenyl) -4,5-diphenylimidazole dimer, N-phenylglycine, N-phenylglycine derivative, 9-phenylacridine Oximes such as acridine derivatives such as 1,2-octanedione, 1- [4- (phenylthio)-, 2- (o-benzoyloxime)] Stearls, coumarin compounds such as 7-diethylamino-4-methylcoumarin, thioxanthone compounds such as 2,4-diethylthioxanthone, acylphosphine oxide compounds such as 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide, The compound which has oxime ester is mentioned, These can be used individually or in combination of 2 or more types.

  From the viewpoint of making the resist shape better, it is preferable to use a compound having an oxime ester. Examples of the compound having an oxime ester include 2- (acetyloxyiminomethyl) thioxanthen-9-one, 1,2-octanedione, 1- [4- (phenylthio)-, 2- (O-benzoyloxime). And 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl],-1- (O-acetyloxime. Commercially available products include IRGACURE-OXE01, IRGACURE-OXE02 (both manufactured by BASF Corporation) and the like.

  (C) As a thermosetting agent, an epoxy compound, an oxetane compound, a benzoxazine compound, an oxazoline compound, a cyclic carbonate compound, a blocked isocyanate, a melamine derivative, or the like can be used.

  Examples of the epoxy compound include bisphenol A type epoxy resins such as bisphenol A diglycidyl ether, bisphenol F type epoxy resins such as bisphenol F diglycidyl ether, bisphenol S type epoxy resins such as bisphenol S diglycidyl ether, and biphenol diglycidyl ether. Biphenol type epoxy resins such as bixylenol type diglycidyl ether, hydrogenated bisphenol A type epoxy resins such as hydrogenated bisphenol A glycidyl ether, and dibasic acid-modified diglycidyl ether type epoxy resins thereof Etc. These may be used alone or in combination of two or more. Commercially available compounds can be used as these compounds. For example, examples of bisphenol A diglycidyl ether include Epicoat 828, Epicoat 1001, and Epicoat 1002 (all manufactured by Japan Epoxy Resin Co., Ltd.). Examples of bisphenol F diglycidyl ether include Epicoat 807 (trade name, manufactured by Japan Epoxy Resin Co., Ltd.). Examples of bisphenol S diglycidyl ether include EBPS-200 (trade name, manufactured by Nippon Kayaku Co., Ltd.) and Epicron EXA-. 1514 (trade name, manufactured by Dainippon Ink & Chemicals, Inc.). Examples of biphenol diglycidyl ether include YL-6121 (trade name, manufactured by Japan Epoxy Resin Co., Ltd.), and examples of bixylenol diglycidyl ether include YX-4000 (trade name, manufactured by Japan Epoxy Resin Co., Ltd.). Can be mentioned. Furthermore, examples of the hydrogenated bisphenol A glycidyl ether include ST-2004 and ST-2007 (both manufactured by Tohto Kasei Co., Ltd., trade names), and the dibasic acid-modified diglycidyl ether type epoxy resin described above is ST. -5100 and ST-5080 (both manufactured by Tohto Kasei Co., Ltd., trade names).

  Examples of oxetane compounds include all compounds having two or more oxetane rings in one molecule, such as 3-ethyl-3-hydroxymethyloxetane, 1,4-bis {[(3-ethyl-3-oxetanyl ) Methoxy] methyl} benzene, 3-ethyl-3- (2-ethylhexylmethyl) oxetane, 1,4-benzenedicarboxylic acid bis [(3-ethyl-3-oxetanyl) methyl] ester, and the like. Specific examples include the Aron Oxetane series manufactured by Toa Gosei Co., Ltd. and the Etanacol Oxetane series manufactured by Ube Industries. When an oxetane compound is used, a curing catalyst such as triphenylphosphine may be used because of low reactivity.

  The blocked isocyanate is inactive at room temperature, but when heated, the blocking agent reversibly dissociates and regenerates the isocyanate group. Examples of the isocyanate compound used include isocyanurate type, biuret type, and adduct type. However, the isocyanurate type is preferable from the viewpoint of adhesion. These may be used alone or in combination of two or more. Examples of the blocking agent include at least one compound selected from diketones, oximes, phenols, alkanols, and caprolactams. Specific examples include methyl ethyl ketone oxime and ε-caprolactam. Block type isocyanate is easily available as a commercial product, for example, Sumidur BL-3175, Desmodur TPLS-2957, TPLS-2062, TPLS-2957, TPLS-2078, BL4165, TPLS2117, BL1100, BL1265, Desmotherm 2170. , Desmotherm 2265 (trade name, manufactured by Sumitomo Bayer Urethane Co., Ltd.), Coronate 2512, Coronate 2513, Coronate 2520 (trade name, manufactured by Nippon Polyurethane Industry Co., Ltd.), B-830, B-815, B-846, B-870, B-874 , B-882 (trade name, manufactured by Mitsui Takeda Chemical Co., Ltd.), Duranate TPA-B80E, Duranate 17B-60PX (Asahi Kasei Chemicals Corporation), and the like. The dissociation temperature of the blocking agent is preferably 120 to 200 ° C.

  The melamine derivative is an initial condensate obtained by reacting an aldehyde with an amino group-containing compound such as melamine, urea or benzoguanamine. For example, trimethylol melamine resin, tetramethylol melamine resin, hexamethylol melamine resin, hexamethoxymethyl melamine resin, hexabutoxymethyl melamine resin, N, N'-dimethylol urea resin, Cymel 300, Cymel 301, Cymel 303, Cymel 325, Melamine resin such as Cymel 350 (trade name of melamine resin manufactured by Mitsui Toatsu Cymel Co.), Melamine resin such as Melan 523, Melan 623, Melan 2000 (trade name of Melamine resin manufactured by Hitachi Chemical Co., Ltd.), Urea such as Melan 18 Resin (trade name of urea resin manufactured by Hitachi Chemical Co., Ltd.), benzoguanamine resin such as Melan 362A (trade name of benzoguanamine resin manufactured by Hitachi Chemical Co., Ltd.), and the like. A particularly preferred amino resin includes hexamethoxymethyl melamine resin.

  (D) Examples of inorganic fillers include barium sulfate, barium titanate, powdered silicon oxide, amorphous silica, talc, clay, calcined kaolin, magnesium carbonate, calcium carbonate, aluminum oxide, aluminum hydroxide, and mica powder. Inorganic fillers can be used. It is particularly desirable to use a silane coupling agent in order to disperse the silica particle in the resin without agglomeration while maintaining the primary particle size. The maximum particle size is preferably 2 μm or less, more preferably 1 μm or less. The average particle size is preferably 400 nm or less in terms of resolution, and more preferably 100 nm or less. The smaller the maximum particle size, the smoother the surface after desmear treatment, and it tends to be easier to fill the under film during subsequent flip chip mounting.

  As the silane coupling agent, generally available ones can be used, for example, alkyl silane, alkoxy silane, vinyl silane, epoxy silane, amino silane, acrylic silane, methacryl silane, mercapto silane, sulfide silane, isocyanate silane, Sulfur silane, styryl silane, alkylchlorosilane, and the like can be used. Specific compound names include methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmethoxysilane, methyltriethoxysilane, methyltriphenoxysilane, ethyltrimethoxysilane, n-propyltrimethoxysilane, diisopropyldimethoxysilane, isobutyltrimethoxy. Silane, diisobutyldimethoxysilane, isobutyltriethoxysilane, n-hexyltrimethoxysilane, n-hexyltriethoxysilane, cyclohexylmethyldimethoxysilane, n-octyltriethoxysilane, n-dodecylmethoxysilane, phenyltrimethoxysilane, diphenyldimethoxy Silane, triphenylsilanol, methyltrichlorosilane, dimethyldichlorosilane, trimethylchlorosilane, n-octyldi Tylchlorosilane, tetraethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropylmethyldimethoxysilane , 3-phenylaminopropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropylmethyldiethoxysilane Bis (3- (triethoxysilyl) propyl) disulfide, bis (3- (triethoxysilyl) propyl) tetrasulfide, vinyltriacetoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, Lutriisopropoxysilane, allyltrimethoxysilane, diallyldimethylsilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3 -Mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltriethoxysilane, N- (1,3-dimethylbutylidene) -3-aminopropyltriethoxysilane, aminosilane and the like.

  What is desirable as the silane coupling agent to be used is preferably a kind that reacts with the carboxyl group of the photoreactive resin having (a) an ethylenically unsaturated group and a carboxyl group contained in the photosensitive resin composition. Methacrylic silane, epoxy silane, mercaptosilane, and isocyanate silane are desirable. Since these silane coupling agents strengthen the bond between silica and the resin, it is possible to increase the strength of the film when used as a permanent mask resist, and at the same time, greatly reduce the thermal expansion coefficient.

  As described above, in this method of manufacturing a semiconductor element, at least one or more semiconductor elements 3 are placed on the support 1 so that the surface 1 opposite to the circuit surface S1 of the semiconductor element 3 faces the support 1. The first insulating layer 4 is formed of an insulating photosensitive resin composition serving as a sealing material on the circuit surface S1 of the semiconductor element 3 and the circuit surface S1 of the semiconductor element 3. And a peeling step of peeling the support 1 from the semiconductor element 3 to expose the opposite surface S2 of the semiconductor element 3. Thereby, the opposite surface S2 of the semiconductor element 3 can be easily exposed in the peeling process while the semiconductor element 3 is sealed and the first insulating layer 4 is formed in the sealing process. Therefore, as compared with the manufacturing method of the conventional semiconductor device 200 shown in FIGS. 6 to 11, the semiconductor device 100 with the rewiring formed thereon can be efficiently manufactured while reducing the thickness. Further, according to the above manufacturing method, since the opposite surface S2 of the semiconductor element 3 is not sealed as compared with the semiconductor device 200 shown in FIG. 11B, a semiconductor with improved heat dissipation while suppressing warpage. The device can be manufactured.

  Moreover, in this embodiment, the process of forming the film 2 for temporary fixing for temporarily fixing the semiconductor element 3 and the support body 1 on the surface of the support body 1 is further provided as a pre-process of an arrangement | positioning process. Thereby, since a semiconductor element and a support body are temporarily fixed, the reliability at the time of manufacturing a semiconductor device can be improved.

  Further, in the present embodiment, as a step subsequent to the opening forming step, a step of forming a seed layer 5 serving as a base of the wiring pattern on the first insulating layer 4 is further provided. Thereby, the wiring pattern 7 having a thickness of 0.1 μm or more can be formed by growing a metal film on the surface of the seed layer 5.

  The semiconductor device 100 is obtained by the method according to the present embodiment. According to such a semiconductor device 100, compared to the conventional semiconductor device 200 shown in FIG. 11B, the thickness can be reduced, and heat dissipation can be enhanced while suppressing warpage.

  As mentioned above, although the suitable embodiment of the manufacturing method of the semiconductor device and photosensitive resin composition concerning this invention was described, this invention is not necessarily limited to embodiment mentioned above, In the range which does not deviate from the meaning Changes may be made as appropriate.

  For example, in the above embodiment, the peeling process is performed after providing the opening 4h in the first insulating layer 4, but the timing of performing the peeling process is not limited to this, and the circuit surface S1 of the semiconductor element 3 is sealed. Thereafter, the peeling step may be performed at any timing before the semiconductor device 20 is separated. For example, when the peeling process is performed immediately after sealing the circuit surface S1 of the semiconductor element 3, in the state of FIG. 1C immediately after the sealing process is performed, first, as shown in FIG. After the support 1 is peeled from the temporarily fixing film 2, the temporarily fixing film 2 is peeled from the semiconductor element 3 to expose the opposite surface S <b> 2 of the semiconductor element 3 as shown in FIG. 5B. Next, as shown in FIG. 5C, an opening 4h is formed in the first insulating layer 4 with the opposite surface S2 of the semiconductor element 3 exposed.

  Then, the manufacturing method of the semiconductor device concerning this invention, a semiconductor device, and the Example of the photosensitive resin composition are demonstrated.

<Preparation of support with film for temporary fixing>
First, a SUS plate having a diameter of 220 mm and a thickness of 1.5 mm was prepared as the support 1. Next, a temporary fixing film 2 as a temporary fixing layer was attached to one side of the SUS plate using a laminator (see FIG. 1A). The temporarily fixing film 2 protruding from the SUS plate was cut off with a cutter knife.

<Arrangement of semiconductor elements>
Next, as shown in FIG. 1B, the semiconductor element 3 (CC80-0101JY manufactured by Waltz Co., Ltd.) having a size of 7.3 mm × 7.3 mm is attached to the opposite surface S2 side of the semiconductor element 3 and the temporarily fixing film 2. Arranged in a grid so that they fit together. The number of semiconductor elements 3 mounted was 293, and the pitch was 9.6 mm in both the vertical and horizontal directions. A die sorter (CAP3500 manufactured by Canon Machinery Co., Ltd.) was used for the placement of the semiconductor element 3. The load at the time of arrangement was 1 kgf per semiconductor element.

<Manufacture of a film-like photosensitive resin composition>
What was shown below was prepared as a photosensitive resin composition which is sealed so as to cover the circuit surface S1 of the semiconductor element 3 and used to form the first insulating layer 4.

Photosensitive resin composition A: (a) As a resin containing a carboxyl group and an ethylenically unsaturated group, an acid-modified cresol novolac epoxy acrylate (CCR-1219H, manufactured by Nippon Kayaku Co., Ltd., trade name) (B) As a photoinitiator component, 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide (Darocur TPO, manufactured by Ciba Japan, trade name), ethanone, 1- [9-ethyl-6- (2 -Methylbenzoyl) -9H-carbazol-3-yl]-, 1- (o-acetyloxime) (Irgacure OXE-02, product name, manufactured by Ciba Japan Co., Ltd.) is used as a (c) thermosetting agent, and a biphenol type Epoxy resin (YX-4000, manufactured by Japan Epoxy Resin Co., Ltd., trade name) was used. (D) As the inorganic filler, a silica filler having an average particle diameter of 50 nm and silane coupling treated with vinylsilane was used. In addition, (d) inorganic filler was mix | blended so that it might become 30 weight% with respect to 100 mass% of photosensitive resin compositions. The dispersion state was measured using a dynamic light scattering nanotrack particle size distribution analyzer “UPA-EX150” (manufactured by Nikkiso Co., Ltd.) and a laser diffraction scattering type microtrack particle size distribution meter “MT-3100” (manufactured by Nikkiso Co., Ltd.). Measurement was performed and it was confirmed that the maximum particle size was 1 μm or less.

  Photosensitive resin composition B: (a) resin containing carboxyl group and ethylenically unsaturated group, (b) photoinitiator component, (c) thermosetting agent are the same as those of photosensitive resin composition A Was used. (D) As an inorganic filler, barium sulfate having an average particle size of 300 nm is dispersed with Starmill LMZ (manufactured by Ashizawa Finetech Co., Ltd.) using zirconia beads having a diameter of 1.0 mm at a peripheral speed of 12 m / s for 3 hours. And adjusted. The dispersion state was measured by the same method as that for the photosensitive resin composition A, and it was confirmed that the maximum particle size was 2 μm.

  Photosensitive resin composition C: (a) resin containing carboxyl group and ethylenically unsaturated group, (b) photoinitiator component, (c) thermosetting agent are the same as those of photosensitive resin composition A Was used. (D) As an inorganic filler, crystalline silica having an average particle diameter of 1 μm is used with Starmill LMZ (manufactured by Ashizawa Finetech Co., Ltd.), using zirconia beads having a diameter of 1.0 mm, and a peripheral speed of 12 m / s for 3 hours. Distributed and adjusted. The dispersion state was measured by the same method as that for the photosensitive resin composition A, and it was confirmed that the maximum particle size was 10 to 15 μm.

  A photosensitive resin composition is obtained by uniformly coating the obtained solutions of photosensitive resin compositions A to C on a 16 μm-thick polyethylene terephthalate film (G2-16, manufactured by Teijin Ltd., trade name) as a support layer. A material layer was formed and dried for about 10 minutes at 100 ° C. using a hot air convection dryer. The film thickness after drying of the photosensitive resin composition layer was 30 μm.

  Subsequently, on the surface of the photosensitive resin composition layer opposite to the side in contact with the support layer, a polyethylene film (NF-15, manufactured by Tamapoly Co., Ltd., trade name) is bonded as a protective film, and the photosensitive film A photosensitive resin composition was obtained.

Using the obtained film-like photosensitive resin composition, sealing was performed so as to cover the circuit surface S1 of the semiconductor element 3, thereby forming the first insulating layer 4 made of the photosensitive resin composition (FIG. 1). (See (c)). Specifically, first, only the protective film of the film-like photosensitive resin composition comprising the photosensitive resin composition A, B or C is peeled off, and the film-like photosensitive resin composition is formed on the circuit surface S1 of the semiconductor element 3. Was placed. The photosensitive resin composition was filled on the circuit surface S <b> 1 of the semiconductor element 3 and between the semiconductor elements 3 using a press-type vacuum laminator (MVLP-500, trade name, manufactured by Meiki Seisakusho). The pressing conditions were a press hot plate temperature of 50 to 80 ° C., a vacuuming time of 20 seconds, a laminating press time of 5 to 30 seconds, an atmospheric pressure of 4 kPa or less, and a pressing pressure of 0.1 to 0.4 MPa. Next, as shown in FIG. 2A, an opening extending from the surface 4 s of the first insulating layer 4 to the circuit surface S <b> 1 of the semiconductor element 3 by performing exposure processing and development processing on the first insulating layer 4. 4h was provided, and the first insulating layer pattern 4a was formed. Thereafter, ultraviolet irradiation was performed with an energy amount of 1 J / cm ² using an ultraviolet irradiation device manufactured by Oak Manufacturing Co., Ltd. Next, as shown in FIG. 2 (b), the support 1 was peeled from the temporary fixing film 2. Then, as shown in FIG. 2C, the temporary fixing film 2 was peeled from the semiconductor element 3 to expose the opposite surface S <b> 2 of the semiconductor element 3. Peeling of the support 1 and the temporary fixing film 2 was performed on a hot plate at 200 ° C. Next, thermosetting was performed in a clean oven at 120 to 170 ° C. for 30 minutes to 1 hour.

  The specifications of the semiconductor device in each example and the sealing conditions at the time of manufacture are shown in Tables 1 and 2, respectively.

  Thereafter, as shown in FIG. 2D, a seed layer 5 having a thickness of Ti 5 nm and Cu 300 nm was formed on the first insulating layer pattern 4a by sputtering.

Next, a circuit forming resist (Hitachi Chemical Industry Co., Ltd., Photoc RY-3525) is attached so as to cover the seed layer 5 with a roll laminator, and a photo tool having a pattern formed thereon is brought into close contact, and EXM- manufactured by Oak Manufacturing Co., Ltd. Exposure was performed with an energy amount of 100 mJ / cm ² using a 1201 type exposure machine. Next, spray development was performed for 90 seconds with a 1 mass% sodium carbonate aqueous solution at 30 ° C. to form a resist pattern 6 as shown in FIG.

  Next, as shown in FIG. 3B, a copper wiring pattern 7 having a thickness of 5 μm was formed by electroplating so as to cover the seed layer 5 on the opening 4h. Next, as shown in FIG. 3C, the circuit forming resist was stripped with a stripping solution, and then the seed layer 5 exposed on the surface was removed with an etching solution, as shown in FIG. 3D.

  Next, a second insulating layer made of a photosensitive resin composition is formed on the wiring pattern 7, and an exposure process and a development process are performed, so that the second insulating layer is formed on the surface 8s of the second insulating layer. An opening 8h extending to the wiring pattern 7 was provided to form a second insulating layer pattern 8 (see FIG. 4A). Next, ultraviolet irradiation and thermosetting were performed in the same manner as the insulating layer 4. As the photosensitive resin composition, the same photosensitive resin composition as that of the first insulating layer 4 was used, and the thickness was 20 μm. Thereafter, using a commercially available electroless nickel / gold plating solution, a plating process was performed so that the nickel plating thickness was 3 μm and the gold plating thickness was 0.1 μm, and a nickel / gold layer 9 was formed on the wiring pattern 7 (FIG. 4 (b)). Next, an Sn—Ag—Cu-based solder ball serving as the external connection terminal 10 was reflow mounted on the nickel / gold layer 9 (see FIG. 4C). Next, the semiconductor device 100 as shown in FIG. 4D was obtained by dicing into pieces having a size of 9.3 mm × 9.3 mm by dicing (blade width 0.3 mm).

<War of first insulating layer>
The first insulating layer 4 was formed, and the warpage of the molded product after thermosetting was performed under the conditions shown in Tables 1 and 2 was evaluated (see FIG. 1C). Specifically, a range of 200 mm in diameter in the first insulating layer 4 was measured at room temperature (25 ° C.) and evaluated based on the following criteria. The evaluation results are shown in Tables 3 and 4. In any case, the warpage amount was less than 2 mm, and there was no problem in manufacturing the semiconductor device 100.
A: Warpage amount is less than 1 mm B: Warpage amount is 1 mm or more and less than 2 mm

<Fillability of the first insulating layer>
The embedding property of the photosensitive resin composition after forming the first insulating layer 4 and performing thermosetting under the conditions shown in Tables 1 and 2 was visually confirmed and evaluated based on the following criteria.
A: The resin is sufficiently embedded between the semiconductor elements, and there is almost no unfilled portion.
B: Some unfilled portions are confirmed between the semiconductor elements, but there is no problem in manufacturing the semiconductor device 100.

<Smoothness of first insulating layer>
The smoothness of the photosensitive resin composition on the circuit surface S1 side of the semiconductor element 3 after the first insulating layer 4 was formed and thermally cured under the conditions shown in Tables 1 and 2 was evaluated. The smoothness was evaluated by measuring the level difference of the circuit surface S1 of the semiconductor element 3 using a surface roughness meter and evaluating it based on the following criteria. In either case, the step was less than 10 μm, and there was no problem in manufacturing the semiconductor device 100.
A: Step difference on the surface of the photosensitive resin composition is less than 2 μm B: Step difference on the surface of the photosensitive resin composition is 2 μm or more and less than 5 μm C: Step difference on the surface of the photosensitive resin composition is less than 10 μm

An opening 4h extending from the surface 4s of the first insulating layer 4 to the circuit surface S1 of the semiconductor element 3 was formed, and the smoothness of the wall surface 4w of the opening 4h was observed (see FIG. 2A). About the smoothness of the wall surface 4w, it observed with the electron microscope and evaluated based on the following references | standards (refer FIG.1 (c)).
A: The wall surface is almost smooth.
B: Some level difference is confirmed on the wall surface, but there is no problem in manufacturing the semiconductor device 100.

  This process is not limited to a wafer level semiconductor device, but can be applied to all semiconductor devices and component-embedded substrates that need to be reduced in size and thickness, such as a package-on-package rewiring process.

  DESCRIPTION OF SYMBOLS 1 ... Support body, 2 ... Film for temporary fixing (temporary fixing layer), 3 ... Semiconductor element, 4 ... 1st insulating layer (insulating layer), 4a ... 1st insulating layer pattern, 5 ... Seed layer, 6 ... Resist pattern, 7 ... wiring pattern, 8 ... second insulating layer pattern, 9 ... nickel / gold layer, 10 ... terminal for external connection.

Claims (10)

A method for manufacturing a semiconductor device comprising: sealing a semiconductor element with a sealing material; forming an insulating layer on a circuit surface of the semiconductor element; and forming a wiring pattern in an opening provided in the insulating layer.
An arrangement step of disposing at least one or more of the semiconductor elements on the support so that the opposite side of the circuit surface of the semiconductor elements faces the support; and
On the circuit surface of the semiconductor element, a sealing step of sealing the circuit surface of the semiconductor element by forming the insulating layer with an insulating photosensitive resin composition serving as the sealing material;
An opening forming step of providing the opening from the surface of the insulating layer to the circuit surface of the semiconductor element by performing exposure processing and development processing on the insulating layer;
A peeling step of peeling the support from the semiconductor element and exposing an opposite surface of the semiconductor element;
A method for manufacturing a semiconductor device, comprising:   2. The method according to claim 1, further comprising a step of forming a temporary fixing layer for temporarily fixing the semiconductor element and the support on the surface of the support as a pre-process of the arranging step. Semiconductor device manufacturing method.   3. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of forming a seed layer serving as a base of the wiring pattern on the insulating layer as a subsequent step of the opening forming step. .   The said sealing process WHEREIN: The temperature of the said photosensitive resin composition shall be 50-120 degreeC, and sealing time shall be 10-300 seconds, It is characterized by the above-mentioned. A method for manufacturing a semiconductor device.   5. The method for manufacturing a semiconductor device according to claim 1, wherein in the sealing step, a sealing pressure of the photosensitive resin composition is set to 0.2 to 2.0 MPa. 6. The method of manufacturing a semiconductor device according to claim 1, wherein, in the sealing step, a thickness T <b> _{2 of the} insulating layer is set to 50 to 750 μm. In the sealing step, a difference (T ₂ −T ₁ ) between a thickness T _{2 of the} insulating layer and a thickness T _{1 of the} semiconductor element is set to 5 to 50 μm. A method for manufacturing a semiconductor device according to one item.   A semiconductor device obtained by the method according to claim 1. It is the photosensitive resin composition used in the method as described in any one of Claims 1-7,
(A) a resin containing a carboxyl group and an ethylenically unsaturated group, (b) a photopolymerization initiator, (c) a thermosetting agent, and (d) a maximum particle size of 5 μm or less and an average particle size of 1 μm. The photosensitive resin composition containing the inorganic filler which is the following.   The photosensitive resin film obtained by apply | coating the photosensitive resin composition of Claim 9 on a support body, and drying.

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