JP2013529258A - Side emission type linear evaporation source, manufacturing method thereof, and linear evaporator - Google Patents
Side emission type linear evaporation source, manufacturing method thereof, and linear evaporator Download PDFInfo
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- 238000001704 evaporation Methods 0.000 title claims abstract description 105
- 230000008020 evaporation Effects 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 31
- 238000000151 deposition Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 21
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 157
- 230000001681 protective effect Effects 0.000 claims description 42
- 238000001771 vacuum deposition Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 230000020169 heat generation Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 22
- 239000010408 film Substances 0.000 description 38
- 238000010586 diagram Methods 0.000 description 21
- 238000007740 vapor deposition Methods 0.000 description 17
- 239000000126 substance Substances 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000010409 thin film Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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Abstract
本発明は側面放出型線状蒸発源、その製造及び線状蒸発器に関している。真空の中で坩堝を加熱して坩堝から放出される材料を基板に蒸着する方法を用いる蒸発システムで坩堝と発熱部から構成され、蒸発源の側面に形成された放出口を有する線状蒸発源、その線状蒸発源の製造方法及び線状蒸発器に関している。本発明では蒸発装置用PBN放出部と、上記放出部の外部表面に蒸着されて加熱に合うようにパターニングされた発熱部と、上記放出部の側面に形成された多数個の放出口を含む線状蒸発源、その製造方法及び線状蒸発器が提示される。
【選択図】 図3
The present invention relates to a side-emitting linear evaporation source, its manufacture and a linear evaporator. A linear evaporation source having a discharge port formed on a side surface of an evaporation source, which is composed of a crucible and a heat generating part in an evaporation system using a method of heating a crucible in vacuum and depositing a material discharged from the crucible on a substrate. The present invention relates to a method for manufacturing the linear evaporation source and a linear evaporator. In the present invention, a line including a PBN emitting portion for an evaporation device, a heat generating portion deposited on the outer surface of the emitting portion and patterned so as to be heated, and a plurality of emitting ports formed on a side surface of the emitting portion. A vaporized evaporation source, a method for its production and a linear evaporator are presented.
[Selection] Figure 3
Description
本発明は、真空中から坩堝を加熱して坩堝から放出される材料を基板に蒸着する方法を用いる有機発光ダイオード(OLED、organic light emitting diode)蒸着装置のような、蒸発システムで坩堝と発熱部で構成された側面放出型線状蒸発源(Linear effusion cell with side orifice array)、その線状蒸発源の製造方法(the method of manufacturing linear effusion cell with side orifice array)及び線状蒸発器(evaporator)に関する。
更に詳しくは、放出部の外部表面に発熱物質を蒸着してこれを加熱に合うようにパターニングして発熱部を有し、上記放出部の側面に多数個の放出口を有して、上記発熱部に電流を注入することで発熱部に直接に接している放出部の側面に形成された多数個の放出口を通じて、坩堝の側面へ原料物質が放出される線状蒸発源、その製造方法及び線状蒸発器に関する。
The present invention relates to a crucible and a heat generating part in an evaporation system such as an organic light emitting diode (OLED) vapor deposition apparatus using a method in which a crucible is heated from a vacuum and a material emitted from the crucible is deposited on a substrate. A linear effusion cell with side orifice array, a method of manufacturing linear effusion cell with side orifice array, and a linear evaporator (evaporator) About.
More specifically, a heat-generating substance is deposited on the outer surface of the discharge portion and is patterned so as to be suitable for heating. The heat-generation portion has a plurality of discharge openings on the side surface of the discharge portion. A linear evaporation source in which a source material is discharged to the side surface of the crucible through a plurality of discharge ports formed on the side surface of the discharge portion that is in direct contact with the heat generating portion by injecting current into the portion, a manufacturing method thereof, and Relates to a linear evaporator.
基板に薄膜を形成する一般的な方法には、真空蒸着(evaporation)法、イオンプレーティング(ion plating)法、及びスパッタリング(sputtering)法のような物理気相蒸着(PVD)法と、ガス反応による化学気相蒸着(CVD)法等がある。有機発光ダイオード薄膜成長装置は、有機発光ダイオードを構成する有機物を真空蒸着法によって基板に蒸着することで薄膜を成長する。
また、有機発光ダイオードで電極形成のためにアルミニウムのような金属は真空蒸着法を利用して蒸着する。
Common methods for forming thin films on substrates include physical vapor deposition (PVD) methods such as vacuum evaporation, ion plating, and sputtering, and gas reactions. There is a chemical vapor deposition (CVD) method. The organic light emitting diode thin film growth apparatus grows a thin film by depositing an organic substance constituting the organic light emitting diode on a substrate by a vacuum deposition method.
In addition, a metal such as aluminum is deposited using a vacuum deposition method for forming an electrode in an organic light emitting diode.
このように、真空蒸着法を利用して有機膜及び金属膜を蒸着する一般的な蒸着装置で、蒸着チャンバの上部には基板が装着され、蒸着チャンバの下部には蒸発源が配置される。上記蒸発源は、蒸着物質を含む坩堝と、坩堝の外側に設置されて蒸着物質を蒸発させるための熱源で作用する発熱部を含む。上記された蒸発源の発熱部に電源を加えると、坩堝及び坩堝内部の材料物質が加熱され、蒸発された材料物質が坩堝の上部開口部に放出されてチャンバの内側上部に装着された基板に蒸着され、上記基板に有機膜や金属膜等が形成される。
上記蒸発源に関して、本出願人が特許出願した韓国出願番号第10−2009−114068号の“発熱部一体型真空薄膜蒸着用分子線蒸発源、その製造方法及び蒸発器”の発明がある。上記特許出願の発明は、真空で試料に有機物等の材料を蒸着するための蒸着システムに使われる上記材料を入れるためにPBNで製作された坩堝と、上記PBN坩堝の外部表面に発熱部を直接蒸着して加熱することにより、伝導により坩堝を加熱することで熱効率を高めて、構造を単純にする発熱部一体型蒸発源に関する。
As described above, in a general vapor deposition apparatus for vapor-depositing an organic film and a metal film using a vacuum vapor deposition method, a substrate is mounted on the upper part of the vapor deposition chamber, and an evaporation source is disposed on the lower part of the vapor deposition chamber. The evaporation source includes a crucible containing a vapor deposition material and a heat generating unit that is installed outside the crucible and acts as a heat source for evaporating the vapor deposition material. When a power source is applied to the heat generating part of the evaporation source described above, the crucible and the material substance inside the crucible are heated, and the evaporated material substance is discharged to the upper opening of the crucible and applied to the substrate mounted on the inner upper part of the chamber. By vapor deposition, an organic film or a metal film is formed on the substrate.
Regarding the above-mentioned evaporation source, there is an invention of “a molecular beam evaporation source for heat generating part integrated vacuum thin film deposition, its manufacturing method and an evaporator” of Korean Patent Application No. 10-2009-1114068 filed by the present applicant. The invention of the above-mentioned patent application is a crucible made of PBN for putting the material used in a vapor deposition system for vapor-depositing a material such as an organic substance on a sample in a vacuum, and a heating part directly on the outer surface of the PBN crucible. The present invention relates to a heat generating part integrated evaporation source that heats a crucible by conduction and increases thermal efficiency by heating by vapor deposition and simplifies the structure.
しかし、有機発光ダイオード基板の大きさが大型化されながら基板を上部に装着すると、曲げがひどくて蒸着物質の均一度が下がって扱いにくくなる問題点がある。従って、大形基板を垂直から約20度以下の角度で傾けて(以下垂直で約20度以下の角度に傾いたものも垂直と称する)装着するか、下部に装着すれば曲げがなくて扱うのが容易である。上記蒸発源は、上部の開口部を通じて材料物質が放出されるから垂直や下部に装着された基板に材料物質を蒸着することができない問題点がある。 However, when the size of the organic light emitting diode substrate is increased and the substrate is mounted on the upper portion, there is a problem that bending becomes severe and the uniformity of the deposited material is lowered, which makes it difficult to handle. Therefore, if the large substrate is mounted at an angle of about 20 degrees or less from the vertical (hereinafter, the vertical and inclined at an angle of about 20 degrees or less is also referred to as vertical) or mounted at the bottom, it is handled without bending. Easy to do. The evaporation source has a problem in that the material substance cannot be deposited on the substrate mounted vertically or below because the material substance is discharged through the upper opening.
従って、垂直に装着されるか、下部に装着された基板に原料物質を効率的に供給することができる側面放出型線状蒸発源の開発が要求されている。 Accordingly, there is a need for the development of a side emission linear evaporation source that can efficiently supply a source material to a substrate mounted vertically or mounted on a lower portion.
本発明は、上記従来技術の問題点を解決するためになされたものであって、本発明の目的は、基板を垂直に装着して、インラインで薄膜を蒸着するシステムで使用できる側面へ材料を放出するための線状蒸発源、その線状蒸発源の製造方法及び線状蒸発器を提供することである。 The present invention has been made to solve the above-described problems of the prior art, and the object of the present invention is to provide a material on a side surface that can be used in a system in which a substrate is mounted vertically and a thin film is deposited in-line. It is to provide a linear evaporation source for discharge, a method of manufacturing the linear evaporation source, and a linear evaporator.
上記本発明の目的を果たすための技術的解決手段として、本発明の第1観点は、真空で試料に有機物や金属等の材料を蒸着するための蒸着システムに使われる上記材料を入れるためのPBNで製作された坩堝と、上記PBN坩堝の外部表面に加熱に合うようにパターニングされて蒸着されたPGから構成される第1発熱部と、上記PBN坩堝と上記PG第1発熱部を貫通して坩堝の側面に形成された多数個の放出口を含む側面放出型線状蒸発源が提示される。 As a technical solution for achieving the above object of the present invention, the first aspect of the present invention is to provide a PBN for containing the above materials used in a vapor deposition system for vapor depositing materials such as organic substances and metals on a sample in a vacuum. A crucible manufactured in the above, a first heat generating part composed of a PG patterned and deposited on the outer surface of the PBN crucible, and passing through the PBN crucible and the PG first heat generating part. A side emission type linear evaporation source including a plurality of emission ports formed on a side surface of a crucible is presented.
本発明の第2観点は、真空で試料に有機物等の材料を蒸着するための蒸着システムに用いられる上記材料を入れるためのPBNで製作された坩堝と、上記PBN坩堝の外部表面に加熱に合うようにパターニングされて蒸着されたPGから構成される第1発熱部と、上記PBN坩堝の内部表面に蒸着されてアルミニウムのようなPBNによく癒着される試料から坩堝を保護するために蒸着されたPGから構成される第1保護膜と、上記第1発熱部と上記第1保護膜を電気的に絶縁するための絶縁部と、上記PBN坩堝、上記PG第1発熱部及び上記第1保護膜を貫通して坩堝の側面に形成された多数個の放出口を含む側面放出型線状蒸発源が提示される。アルミニウムのような、一部材料等は冷却の時に液体状態から固体状態へ変わりながらPBN坩堝とよく付くようになり、坩堝の冷却の時に試料と坩堝の熱膨脹係数差によって坩堝の破損される問題点がある。このような試料等は、PGとはよく付かないので、坩堝の内部にPGからなった保護膜を形成することで坩堝破損の問題点を解決することができる。 The second aspect of the present invention is suitable for heating a crucible made of PBN for putting the material used in a vapor deposition system for depositing a material such as an organic substance on a sample in vacuum, and an external surface of the PBN crucible. The first heat generating part composed of PG patterned and deposited as described above, and deposited to protect the crucible from a sample deposited on the inner surface of the PBN crucible and well adhered to PBN such as aluminum. A first protective film made of PG; an insulating part for electrically insulating the first heat generating part and the first protective film; the PBN crucible; the PG first heat generating part; and the first protective film. A side emission type linear evaporation source including a plurality of emission ports formed on the side surface of the crucible through the crucible is presented. Some materials, such as aluminum, are attached to the PBN crucible while changing from a liquid state to a solid state during cooling, and the crucible is damaged due to the difference in thermal expansion coefficient between the sample and the crucible when the crucible is cooled. There is. Since such a sample does not adhere well to PG, the problem of crucible breakage can be solved by forming a protective film made of PG inside the crucible.
本発明の第3観点は、本発明の上記第1観点の発明で、上記PBN坩堝の開口部を覆うためのPBN蓋体と、上記PBN蓋体の外部表面に加熱に合うようにパターニングされて蒸着されたPGから構成される第2発熱部を含む側面放出型線状蒸発源が提示される。 A third aspect of the present invention is the invention according to the first aspect of the present invention, wherein the PBN lid for covering the opening of the PBN crucible and the outer surface of the PBN lid are patterned so as to be suitable for heating. A side emission type linear evaporation source including a second heat generating part composed of vapor-deposited PG is presented.
本発明の第4観点は、本発明の上記第2観点の発明で、上記PBN坩堝の開口部を覆うためのPBN蓋体と、上記PBN蓋体の外部表面に加熱に合うようにパターニングされて蒸着されたPGから構成される第2発熱部と、上記PBN蓋体の内部表面に蒸着されてアルミニウムのようなPBNによく癒着される試料から坩堝を保護するためのPGから構成される第2保護膜と、上記第2発熱部と上記第2保護膜を電気的に絶縁するための絶縁部を含む側面放出型線状蒸発源が提示される。 A fourth aspect of the present invention is the invention according to the second aspect of the present invention, wherein the PBN lid for covering the opening of the PBN crucible and the outer surface of the PBN lid are patterned so as to be suitable for heating. A second heat generating part composed of vapor-deposited PG and a second heat-generating part composed of PG for protecting the crucible from a sample which is vapor-deposited on the inner surface of the PBN lid and adheres well to PBN such as aluminum. A side emission linear evaporation source including a protective film and an insulating part for electrically insulating the second heat generating part and the second protective film is presented.
本発明の第5観点は、PBNで製作された坩堝と、上記PBN坩堝の外部表面に加熱に合うようにパターニングされて蒸着されたPGから構成される第1発熱部を含む蒸発部と、PBNで製作された放出部と、上記PBN放出部の外部表面に加熱に合うようにパターニングされて蒸着されたPGから構成される第2発熱部と、上記PBN放出部と上記PG第2発熱部を貫通して放出部の側面に形成された多数個の放出口を含む放出部で構成される側面放出型線状蒸発源が提示される。 According to a fifth aspect of the present invention, there is provided an evaporating unit including a first heat generating unit composed of a crucible made of PBN, a PG patterned and deposited on the external surface of the PBN crucible to be heated, and a PBN. A second heat generating part composed of a PG deposited on the outer surface of the PBN emitting part and deposited on the outer surface of the PBN emitting part, and the PBN emitting part and the PG second heat generating part. A side emission type linear evaporation source composed of an emission part including a plurality of emission ports penetrating through and formed on a side surface of the emission part is presented.
本発明の第6観点は、上記本発明の第5観点の発明で、上記PBN坩堝と上記PBN放出部の内部表面に蒸着されてアルミニウムのようなPBNによく癒着される試料から坩堝を保護するためのPGから構成される保護膜を含む側面放出型線状蒸発源が提示される。 A sixth aspect of the present invention is the invention of the fifth aspect of the present invention, wherein the crucible is protected from a sample which is vapor-deposited on the inner surfaces of the PBN crucible and the PBN discharge part and adheres well to PBN such as aluminum. A side emission linear evaporation source including a protective film made of PG is provided.
本発明の第7観点は、上記本発明の第1ないし第6観点の側面放出型線状蒸発源を製造する方法が提示される。 According to a seventh aspect of the present invention, there is provided a method for manufacturing the side emission linear evaporation source according to the first to sixth aspects of the present invention.
本発明の第8観点は、上記側面放出型線状蒸発源を真空フランジに装着する時に電源供給用電極を支持台で活用する線状蒸発器が提示される。 According to an eighth aspect of the present invention, there is provided a linear evaporator that utilizes a power supply electrode in a support when the side emission linear evaporation source is mounted on a vacuum flange.
本発明の第9観点は、上記側面放出型線状蒸発源を真空フランジに装着する時に線状蒸発源が力を受けて動く又は破損されることを防止するために接触面積が最小化されるように設計された間隔維持装置(スペーサ)を更に含む線状蒸発器が提示される。 According to a ninth aspect of the present invention, the contact area is minimized in order to prevent the linear evaporation source from being moved or damaged by force when the side emission linear evaporation source is mounted on the vacuum flange. A linear evaporator is further provided that further includes a spacing device (spacer) designed to be such.
本発明の第10観点は、上記側面放出型線状蒸発源を真空フランジに装着する時、線状蒸発源と電極の固定時に力を分散しながら、電流も分散して発熱部に均一な電流を供給するための分散器(スプレッダー、spreader)を更に含む線状蒸発器が提示される。 According to a tenth aspect of the present invention, when the side-emission linear evaporation source is mounted on a vacuum flange, the current is distributed while the force is distributed while the linear evaporation source and the electrode are fixed, and a uniform current is generated in the heat generating portion. A linear evaporator is further included that further includes a spreader for supplying the water.
本発明の側面放出型線状蒸発源によると、基板を垂直に装着してインラインで真空蒸着するシステムで側面方向へ材料物質を効率的に放出することにより、大型基板にも均一に材料物質を容易に蒸着することができる効果がある。 According to the side emission type linear evaporation source of the present invention, a material substance can be uniformly distributed even to a large substrate by efficiently discharging the material substance in the side direction by a system in which the substrate is vertically mounted and vacuum-deposited in-line. There exists an effect which can be vapor-deposited easily.
以下本発明の実施例に関する発明の構成を添付された図面を参照して詳しく説明する。 Hereinafter, the configuration of the invention relating to the embodiments of the present invention will be described in detail with reference to the accompanying drawings.
参照で図5は、既存の一般的な蒸発器の概略的な構成図である。
図5に示されたように、従来の蒸発源は坩堝1、熱遮断膜2、坩堝1と熱遮断膜2の間に設置されるヒーター3、熱電対4、下部熱遮断膜5、真空フランジ6、電源供給用電極7及び電源接続子8を含む構成である。既存の一般的な蒸発源の発熱部は、坩堝と隔離された状態で坩堝の側面を取り囲んでいるから、坩堝の側面に放出口を形成することができず、上部の開口部を通じて材料物質が放出される。
FIG. 5 is a schematic configuration diagram of an existing general evaporator.
As shown in FIG. 5, the conventional evaporation source is a crucible 1, a heat blocking film 2, a heater 3 installed between the crucible 1 and the heat blocking film 2, a thermocouple 4, a lower heat blocking film 5, a vacuum flange. 6 includes a power supply electrode 7 and a power connector 8. The heat generating part of an existing general evaporation source surrounds the side surface of the crucible while being isolated from the crucible, so that a discharge port cannot be formed on the side surface of the crucible, and the material substance passes through the upper opening. Released.
図1は、本発明の側面放出型線状蒸発源の第1実施例に関する概略的な構成図である。 FIG. 1 is a schematic configuration diagram relating to a first embodiment of a side emission type linear evaporation source according to the present invention.
図1Aに示されたように、真空で試料に有機物、金属等の材料を蒸着するための蒸着システムにおいて、上記材料30を入れるためのPBN(Pyrolytic Boron Nitride:熱分解窒化ホウ素)で製作された坩堝10と、上記PBN坩堝10の外部表面に加熱に合うようにパターニングされ蒸着されたPG(Pyrolytic Graphite:熱分解黒鉛)で構成される第1発熱部20と、上記PBN坩堝10と上記PBN坩堝10の外部表面に蒸着されたPG20を貫通して側面に形成された多数個の放出口40と、上記PBN坩堝10の開口部を覆うPBNで構成された蓋体50と、上記PBN蓋体50の外部表面に加熱に合うようにパターニング(例えば、対称形パターン)になって蒸着されたPGから構成される第2発熱部60を含む構成である。
As shown in FIG. 1A, in a vapor deposition system for depositing materials such as organic substances and metals on a sample in a vacuum, it was made of PBN (Pyrolytic Boron Nitride) for containing the
上記第1発熱部20及び第2発熱部60に電圧が認可された時、上記PBN蓋体50の温度が上記PBN坩堝10の温度より高くするか同じに維持されるように、上記PBN蓋体50に蒸着された第2発熱部60のPGの厚さと上記PBN坩堝10に蒸着された第1発熱部20のPGの厚さの比や、上記第1及び第2発熱部のパターンを調節することが好ましい。
When the voltage is applied to the first
図1Bは、図1AのA−A’の断面の概略図である。
上記第1発熱部の形態の一例は、上記A−A’断面の概略図に示されたように、坩堝の側面の中、放出口と直角な方向で側面底から側面上端部に至る幅約0.5mm以下のPGから構成された発熱部の一部を除去することにより形成できる。このような構造では、放出口近所の抵抗が大きくなり、それによって他の部分に比べて放出口近所の温度が最も高い温度分布が得られるので、単純な対称形パターンで好ましい温度分布が容易に得られる。
FIG. 1B is a schematic view of a cross section taken along line AA ′ of FIG. 1A.
An example of the form of the first heat generating part is as shown in the schematic diagram of the AA ′ cross section, about the width from the bottom of the side to the top of the side in the direction perpendicular to the discharge port in the side of the crucible. It can be formed by removing a part of the heat generating part composed of PG of 0.5 mm or less. In such a structure, the resistance near the discharge port is increased, thereby obtaining a temperature distribution having the highest temperature in the vicinity of the discharge port as compared with other portions, and thus a preferable temperature distribution can be easily obtained with a simple symmetrical pattern. can get.
上記本発明の第1実施例のように、上記PBN坩堝10の外部表面にPGを直接蒸着することで、第1発熱部20と上記PBN坩堝10が付いている一体型線状蒸発源を具現することができ、上記線状蒸発源の側面に上記多数個の放出口40が容易に形成できる。
As in the first embodiment of the present invention, by directly depositing PG on the outer surface of the
坩堝の上部に行くほど圧力が低くなるので、上部側放出口の間隔をより狭くするか上部側放出口の穴を大きくすることで、基板に蒸着される物質の厚さを均一にすることができる。 Since the pressure decreases as it goes to the upper part of the crucible, the thickness of the material deposited on the substrate can be made uniform by narrowing the interval between the upper discharge ports or increasing the holes of the upper discharge ports. it can.
インラインに蒸着される対面的基板の全面的に対して蒸着が成るほど放出口が形成された部分の高さは基板の高さより少し高いことが好ましい。 It is preferable that the height of the portion where the discharge port is formed is slightly higher than the height of the substrate as the deposition is performed on the entire surface of the facing substrate deposited in-line.
図2は、本発明の側面放出型線状蒸発源の第2実施例に関する概略的な構成図である。
図2に示されたように、本発明の第2実施例は、上記第1実施例における上記PBN坩堝10及びPBN蓋体50の内部表面及び上記放出口40の表面に上記PGを蒸着して保護膜が構成されている。本発明の第2実施例は、アルミニウムのようなPBNによく癒着される試料からPBN坩堝10を保護するために、上記PBN坩堝10の内部表面及び上記放出口40の表面に蒸着されたPGから構成された第1保護膜70と、上記放出口40の周辺で、上記第1発熱部20と上記第1保護膜70を電気的に絶縁するために、PGが除去された第1絶縁部80と、上記PBN坩堝10の上端部で、上記第1発熱部20と上記第1保護膜70を電気的に絶縁するためにPGが除去された第2絶縁部100を含み、上記PBN蓋体50の内部表面に蒸着されたPGから構成された第2保護膜90と、上記第2発熱部60と上記第2保護膜90を電気的に絶縁するためにPGが除去された第3絶縁部110を含む構成である。
FIG. 2 is a schematic configuration diagram of a second embodiment of the side emission type linear evaporation source according to the present invention.
As shown in FIG. 2, in the second embodiment of the present invention, the PG is deposited on the inner surface of the
上記第1絶縁部80及び第2絶縁部100の形成は、例えば、上記PBN坩堝10に側面放出口40を形成した後、上記PBN坩堝10の内外部にPGを蒸着して、上記第1発熱部20と第1保護膜70が電気的に絶縁されるように、蒸着されたPGの一部を除去することで第1絶縁部80及び第2絶縁部100が形成できる。
また、他の例は、第1実施例のように発熱部を形成した後、電極接触部を除いた部分をPBNにすべて蒸着した後、坩堝の内部表面及び上記放出口にPG保護膜を形成することもできる。
The first insulating part 80 and the second insulating part 100 are formed by, for example, forming a
In another example, after forming the heat generating portion as in the first embodiment, the portion excluding the electrode contact portion is deposited on the PBN, and then the PG protective film is formed on the inner surface of the crucible and the discharge port. You can also
上記第3絶縁部110の形成は、例えば、上記PBN蓋体50の内外部にPGを蒸着して、上記第2発熱部60と上記第2保護膜90が電気的に絶縁されるように、蒸着されたPGの一部を除去することで形成できる。
The third insulating part 110 may be formed by, for example, depositing PG on the inside and outside of the
上記本発明の第2実施例によって、アルミニウムのようなPBNに癒着される材料30を冷却する時に、熱膨脹係数の差によってPBN坩堝10が破損されることを阻むことができるので、材料を速かに冷凍させることができる。例えば、500cc以上の坩堝で保護膜がない場合に、アルミニウムの融点である摂氏660度より高い温度で摂氏100度まで冷却するためには8時間以上がかかるが、保護膜がある場合には1時間以下の短い時間で冷却ができる。
The second embodiment of the present invention can prevent the
図3は、本発明の側面放出型線状蒸発源の第3実施例に関する概略的な構成図である。 FIG. 3 is a schematic diagram showing a third embodiment of the side emission type linear evaporation source according to the present invention.
図3に示されたように、真空で試料に有機物、金属等の材料を蒸着するための蒸着システムにおいて、上記材料30を入れるためのPBN(Pyrolytic Boron Nitride:熱分解窒化ホウ素)で製作された坩堝10と、上記PBN坩堝10の外部表面に加熱に合うようにパターニングされ蒸着されたPG(Pyrolytic Graphite:熱分解黒鉛)で構成される第1発熱部20と、上記PBN坩堝10の開口部を覆うPBNで構成された放出部200と、上記PBN放出部200の外部表面に加熱に合うようにパターニング(例えば、対称形パターン)されて蒸着されたPGから構成される第2発熱部220と、上記PBN放出部200と上記PBN放出部200の外部表面に蒸着された、PG220を貫通して側面に形成された多数個の放出口240を含む構成である。
As shown in FIG. 3, in a vapor deposition system for depositing materials such as organic substances and metals on a sample in a vacuum, it was made of PBN (Pyrolytic Boron Nitride) for containing the
上記第1発熱部20及び第2発熱部220に電圧が認可された時、上記PBN放出部200の温度が上記PBN坩堝10の温度より高いか同じに維持されるように、上記PBN放出部200に蒸着された第2発熱部220PGの厚さと上記PBN坩堝10に蒸着された第1発熱部20PGの厚さの比、及び上記第1及び第2発熱部のパターンを調節するのが好ましい。
When the voltage is applied to the first
放出部の上部に行くほど圧力が低くなるので、上部側放出口の間隔をより狭くするか上部側放出口の穴を大きくすることで、基板に蒸着される物質の厚さを均一にすることができる。 Since the pressure becomes lower toward the upper part of the discharge part, the thickness of the substance deposited on the substrate is made uniform by narrowing the interval between the upper discharge holes or increasing the hole of the upper discharge hole. Can do.
インラインに蒸着される対面的基板の全面的に対して蒸着ができるように、放出口が形成された部分の高さは、基板の高さより少し高いことが好ましい。 It is preferable that the height of the portion where the discharge port is formed is slightly higher than the height of the substrate so that vapor deposition can be performed on the entire surface of the facing substrate deposited in-line.
図4は、本発明の側面放出型線状蒸発源の第4実施例に関する概略的な構成図である。 FIG. 4 is a schematic configuration diagram of a fourth embodiment of the side emission type linear evaporation source according to the present invention.
図4に示されたように、本発明の第4実施例は、上記第3実施例における上記PBN坩堝10及びPBN放出部200の内部表面及び上記放出口240の表面に、上記第2実施例のような方法で、上記PGを蒸着して保護膜70、270が構成されている。
As shown in FIG. 4, the fourth embodiment of the present invention includes the second embodiment on the inner surface of the
図6は、上記本発明の第4実施例に開示された側面放出型線状蒸発源を用いた線状蒸発器の第5実施例に関する概略的な構成図である。
図6Aに示されたように、本発明の側面放出型線状蒸発源を電源供給用電極600と熱電対(Thermocouple、T/C)用電極300が装着された真空フランジ400に装着することができる。この時に、電源供給用電極600は、上記第1発熱部20と第2発熱部220に電源が供給できるように連結され、熱電対用電極300は、線状蒸発源の温度を測定できるように連結される。
上記電源供給用電極600を支持台で用いられることにより構造を単純化することができる。上記電源供給用電極600が側面放出口240に支障にならないように、2つの電極から側面放出口240が遠い所に位置するように電極が配置されている。
FIG. 6 is a schematic diagram of a fifth embodiment of the linear evaporator using the side emission type linear evaporation source disclosed in the fourth embodiment of the present invention.
As shown in FIG. 6A, the side emission linear evaporation source of the present invention can be mounted on a
The structure can be simplified by using the
上記線状蒸発器は、本発明の側面放出型線状蒸発源の下側及び上側に設置されるスペーサ500a・500bと、上記線状蒸発源の底面第1発熱部20に接触されるように設置される熱電対(Thermocouple、T/C)用電極300と、上記線状蒸発源の下側から所定距離(通り)離隔されて設置される真空フランジ400と、上記線状蒸発源の放出口240を間に置いて上記スペーサ500a・500bを貫通して上記第1発熱部20及び第2発熱部220に接触されるように設置される1対以上の電源供給用電極600と、第1発熱部20の電極接触部下部に位置する分散器700aと、第2発熱部220の電極接触部上部に位置する分散器700bと、を含んでいる。
The linear evaporator is brought into contact with the
図6Bは、図6Aのスペーサの概略図である。 FIG. 6B is a schematic view of the spacer of FIG. 6A.
上記スペーサ500a・500bは、線状蒸発源が動かないように線状蒸発源を固定する役目をし、熱損室を最小化するために線状蒸発源との接触を最小化する構造の接触部520と、電源供給用電極600が通過する貫通ホール511−514を含んでいる。
The
図6Cは、図6Aの分散器の概略図である。 FIG. 6C is a schematic diagram of the disperser of FIG. 6A.
上記分散器700a・700bは、線状蒸発源の重さが電極接触部に集中することを防止して力を分散する役目をする。また電流が1個所で集中されることを防止して発熱部から熱が均一に発熱されるように行う役目をする。上記分散器700a・700bは、図6Cに示されたように、電源供給用電極600が貫通する貫通ホール711−714を含んでいる。
The
上記分散器は、グラファイトで製作することが好ましい。然し、高温特性が優れたモリブデン等の金属で製作することもできる。 The disperser is preferably made of graphite. However, it can be made of a metal such as molybdenum having excellent high temperature characteristics.
図7は、上記本発明の実施例4に掲示された側面放出型線状蒸発源を使った線状蒸発器の第6実施例に関する概略的な構成図である。 FIG. 7 is a schematic diagram showing a sixth embodiment of the linear evaporator using the side emission type linear evaporation source posted in the fourth embodiment of the present invention.
図7Aに示されたように、第5実施例と異なって、真空フランジを線状蒸発源の上部に装着する線状蒸発器の構成である。従って、図7Bのように、熱電対(Thermocouple、T/C)用電極300が貫通できる貫通ホール530と、両側の電源供給用電極600が貫通できる貫通ホール511−514及び接触部520を含んでいる。
As shown in FIG. 7A, unlike the fifth embodiment, it is a configuration of a linear evaporator in which a vacuum flange is mounted on an upper portion of a linear evaporation source. Accordingly, as shown in FIG. 7B, a through
図7Cは、図6Cのような趣旨の分散器700a・700bに関する概略的な構成図である。上記分散器700a・700bは、図7Cに図示されたように熱電対(Thermocouple、T/C)用電極300が貫通できる貫通ホール730と、両側の電源供給用電極600が貫通できる貫通ホール711−714を含んでいる。
FIG. 7C is a schematic configuration diagram relating to the
図8は、本発明の側面放出型線状蒸発源製造方法に関する第1実施例を説明する図である。
図8に示されたように、本発明の側面放出型線状蒸発源製造方法は、真空蒸着システムの線状蒸発源製造において、PBN坩堝を準備する段階(S100)と、上記PBN坩堝の外部表面にPGを蒸着して第1発熱層を形成する段階(S110)と、上記PBN坩堝の側面に所定大きさの放出口を上記PBN坩堝の長さ方向に多数個を形成する段階(S120)と、上記PBN坩堝外部表面に形成された第1発熱層に加熱に適合するパターン(例えば、対称形パターン)を形成する段階(S130)と、を含む。
FIG. 8 is a diagram for explaining a first embodiment relating to a method for manufacturing a side emission type linear evaporation source according to the present invention.
As shown in FIG. 8, the method for manufacturing a side-emission type linear evaporation source according to the present invention includes a step of preparing a PBN crucible (S100) in manufacturing a linear evaporation source of a vacuum deposition system, and an outside of the PBN crucible. Forming a first heat generating layer by depositing PG on the surface (S110), and forming a plurality of discharge holes of a predetermined size on the side surface of the PBN crucible in the length direction of the PBN crucible (S120). And a step (S130) of forming a pattern (for example, a symmetrical pattern) suitable for heating on the first heat generating layer formed on the outer surface of the PBN crucible.
又、本発明の上記側面放出型線状蒸発源製造方法は、上記PBN坩堝の上側開口部を覆うためのPBN蓋体を準備する段階(S140)と、上記PBN蓋体の外部表面にPGを蒸着して第2発熱層を形成する段階(S150)と、上記PBN蓋体の外部表面に形成された第2発熱層に加熱に適合するパターン(例えば、対称形パターン)を形成する段階(S160)をさらに含むことができる。上記第2発熱層は、好ましくは厚さ1000ミクロメーター以下のPGで蒸着されることが好ましい。 The method for manufacturing a side emission type linear evaporation source according to the present invention includes a step of preparing a PBN lid for covering the upper opening of the PBN crucible (S140), and PG on the outer surface of the PBN lid. A step of forming a second heat generating layer by vapor deposition (S150) and a step of forming a pattern suitable for heating (for example, a symmetrical pattern) on the second heat generating layer formed on the outer surface of the PBN lid (S160). ). The second heat generating layer is preferably deposited by PG having a thickness of 1000 micrometers or less.
図9は、本発明の側面放出型線状蒸発源製造方法に関する第2実施例を説明する図である。
図9に示されたように、本発明の側面放出型線状蒸発源製造に関する第2実施例は、上記第1実施例で、上記PBN坩堝の内部表面及び上記PBN蓋体の下部表面にPGを蒸着して保護膜を更に形成することを特徴とする。
FIG. 9 is a diagram for explaining a second embodiment relating to the method for manufacturing a side emission type linear evaporation source of the present invention.
As shown in FIG. 9, the second embodiment relating to the production of the side emission type linear evaporation source according to the present invention is the first embodiment described above, and the PG is formed on the inner surface of the PBN crucible and the lower surface of the PBN lid. The protective film is further formed by vapor deposition.
本発明の側面放出型線状蒸発源製造方法に関する第2実施例は、真空蒸着システムの線状蒸発源製造において、PBN坩堝を準備する段階(S200)と、上記PBN坩堝の側面に所定大きさの放出口を上記PBN坩堝の長さ方向に多数個を形成する段階(S210)と、上記PBN坩堝の内部及び外部表面にPGを蒸着して上記PBN坩堝の外部表面に第1発熱層と内部表面に第1保護膜を形成する段階(S220)と、上記PBN坩堝外部表面に形成された第1発熱層に加熱に適合するなパターン(例えば、対称形パターン)を形成する段階(S230)と、上記第1発熱層と第1保護膜を電気的に絶縁させる絶縁部を形成する段階(S240)と、を含む。 A second embodiment of the method for manufacturing a side emission type linear evaporation source according to the present invention includes a step of preparing a PBN crucible (S200) in manufacturing a linear evaporation source of a vacuum deposition system, and a predetermined size on a side surface of the PBN crucible. Forming a plurality of discharge ports in the length direction of the PBN crucible (S210), and depositing PG on the inside and outside surfaces of the PBN crucible to form the first heat generating layer and the inside on the outside surface of the PBN crucible. Forming a first protective film on the surface (S220), forming a pattern suitable for heating (for example, a symmetrical pattern) on the first heat generating layer formed on the outer surface of the PBN crucible (S230); Forming an insulating part that electrically insulates the first heat generating layer from the first protective film (S240).
又、本発明の上記側面放出型線状蒸発源製造方法は、上記PBN坩堝を覆って蒸発のための放出口が形成されたPBN蓋体を準備する段階(S250)と、上記PBN蓋体の内部及び外部表面にPGを蒸着して、上記PBN蓋体の外部表面に第2発熱層と内部表面に第2保護膜を形成する段階(S260)と、上記PBN蓋体の外部表面に形成された上記第2発熱層に加熱に適合するパターン(例えば、対称形パターン)を形成する段階(S270)と、上記第2発熱層と上記第2保護膜を電気的に絶縁させるための絶縁部を形成する段階(S280)と、を含む。 The method of manufacturing a side-emission type linear evaporation source according to the present invention includes a step (S250) of preparing a PBN lid body that covers the PBN crucible and has an outlet for evaporation (S250); PG is deposited on the inner and outer surfaces to form a second heat generating layer on the outer surface of the PBN lid and a second protective film on the inner surface (S260); and formed on the outer surface of the PBN lid. Forming a pattern suitable for heating (for example, a symmetrical pattern) on the second heat generating layer (S270), and an insulating portion for electrically insulating the second heat generating layer from the second protective film. Forming (S280).
図10は、本発明の側面放出型線状蒸発源製造方法に関する第3実施例を説明する図である。
図10に示されたように、本発明の側面放出型線状蒸発源製造方法に関する第3実施例は、PBN坩堝を準備する段階(S300)と、上記PBN坩堝の外部表面にPGを蒸着して第1発熱層を形成する段階(S310)と、上記PBN坩堝外部表面に形成された上記第1発熱層に加熱に適合するパターンを形成する段階(S320)と、PBN放出部を準備する段階(S330)と、上記PBN放出部の外部表面にPGを蒸着して第2発熱層を形成する段階(S340)と、上記PBN放出部外部表面に形成された上記第2発熱層に加熱に適合するパターンを形成する段階(S350)と、上記PBN放出部の側面に所定大きさの多数個の放出口を形成する段階(S360)と、を含む。
FIG. 10 is a diagram for explaining a third embodiment relating to the method for manufacturing a side emission type linear evaporation source according to the present invention.
As shown in FIG. 10, the third embodiment of the method for manufacturing a side-emission type linear evaporation source according to the present invention includes a step of preparing a PBN crucible (S300), and depositing PG on the outer surface of the PBN crucible. Forming a first heat generating layer (S310), forming a pattern suitable for heating on the first heat generating layer formed on the outer surface of the PBN crucible (S320), and preparing a PBN discharge portion (S330), PG is deposited on the outer surface of the PBN emitting part to form a second heating layer (S340), and the second heating layer formed on the outer surface of the PBN emitting part is adapted for heating. Forming a pattern to be formed (S350), and forming a plurality of discharge ports of a predetermined size on the side surface of the PBN discharge part (S360).
図11は、本発明の側面放出型線状蒸発源製造方法に関する第4実施例を説明する図である。
図11に示されたように、本発明の側面放出型線状蒸発源製造方法に関する第4実施例は、PBN坩堝を準備する段階(S400)と、上記PBN坩堝の内外部表面にPGを蒸着して第1発熱層及び第1保護膜を形成する段階(S410)と、上記PBN坩堝外部表面に形成された上記第1発熱層に加熱に適合するパターンを形成する段階(S420)と、上記第1発熱層と上記第1保護膜の間に電気的に絶縁させるための絶縁部を形成する段階(S430)と、上記PBN坩堝を覆うPBN放出部を準備する段階(S440)と、上記PBN放出部の側面に放出口を形成する段階(S450)と、上記PBN放出部の内部及び外部表面にPGを蒸着して、上記PBN放出部の外部表面に第2発熱層と内部表面に第2保護膜を形成する段階(S460)と、上記PBN放出部の外部表面に形成された上記第2発熱層に加熱に適合するパターンを形成する段階(S470)と、上記第2発熱層と上記第2保護膜を電気的に絶縁させるための絶縁部を形成する段階(S480)と、を含む。
FIG. 11 is a diagram for explaining a fourth embodiment relating to the method for manufacturing a side emission type linear evaporation source according to the present invention.
As shown in FIG. 11, the fourth embodiment of the method for manufacturing a side emission type linear evaporation source according to the present invention includes a step of preparing a PBN crucible (S400), and deposits PG on the inner and outer surfaces of the PBN crucible. Forming a first heat generating layer and a first protective film (S410), forming a pattern suitable for heating on the first heat generating layer formed on the outer surface of the PBN crucible (S420), and Forming an insulating part for electrical insulation between the first heat generating layer and the first protective film (S430), preparing a PBN discharge part covering the PBN crucible (S440), and the PBN; Forming a discharge port on a side surface of the emission part (S450), depositing PG on the inside and outside surfaces of the PBN emission part, and forming a second heat generating layer on the outer surface of the PBN emission part and a second on the inner surface; Step of forming a protective film ( 460), forming a pattern suitable for heating on the second heat generating layer formed on the outer surface of the PBN emitting part (S470), electrically connecting the second heat generating layer and the second protective film. Forming an insulating part for insulation (S480).
以上で説明された、本発明の側面放出型線状蒸発源及びその製造方法に関する発明の技術的範囲は、上述された実施例等に限定されるものではなく、本発明の技術的思想に含まれる予測可能な多様な実施例を当然に含んでいる。例えば、上述された本発明の実施例に適用された発熱部を保護するために、第1発熱部及び第2発熱部の外部にPBNを追加に蒸着することができる。この時には電源供給用電極との連結のための部分にはPBNが蒸着されないように行う。また発熱部に用いられるPGの代りに、高温発熱が可能なタングステン(W)、モリブデン(Mo)、チタン(Ti)等の物質を用いることができる。また、上記の線状蒸発器で真空システムに熱を放出することを最小化するために線状蒸発器の外部に熱遮断膜を装着することができる。 The technical scope of the invention relating to the side emission type linear evaporation source and the manufacturing method thereof according to the present invention described above is not limited to the above-described embodiments and the like, and is included in the technical idea of the present invention. Naturally, it includes a variety of predictable examples. For example, in order to protect the heat generating part applied to the above-described embodiment of the present invention, PBN can be additionally deposited outside the first heat generating part and the second heat generating part. At this time, PBN is not deposited on the portion for connection with the power supply electrode. Further, instead of PG used for the heat generating part, a substance such as tungsten (W), molybdenum (Mo), titanium (Ti), etc., capable of generating heat at high temperature can be used. Further, in order to minimize the release of heat to the vacuum system with the above-described linear evaporator, a heat shielding film can be attached to the outside of the linear evaporator.
10・・・PBN坩堝、20・・・第1発熱部、30・・・材料(試料)、40、240・・・放出口、50・・・PBN蓋体、60、220・・・第2発熱部、70・・・第1保護膜、90、270・・・第2保護膜、80、100、110・・・絶縁部、300・・・熱電対用電極、500a、500b・・・スペーサ、600・・・電源供給用電極、700a、700b・・・スプレッダー。
DESCRIPTION OF
Claims (20)
材料を入れるための上側が開口されたPBN(pyrolytic boron nitride、熱分解窒化ホウ素)坩堝と、
上記PBN坩堝の外部表面に蒸着され、加熱に適合なパターンが形成された第1発熱部と、
上記PBN坩堝の側面と上記第1発熱部を貫通して形成された多数個の側面放出口を含む側面放出型線状蒸発源。 In linear evaporation sources used in vacuum deposition systems,
A PBN (pyrolytic boron nitride) crucible with an open top to contain the material;
A first heat generating part deposited on the outer surface of the PBN crucible and formed with a pattern suitable for heating;
A side emission type linear evaporation source including a plurality of side emission ports formed through the side surface of the PBN crucible and the first heat generating portion.
上記PBN坩堝の内部表面及び上記放出口の表面に形成された第1保護膜と、
上記第1発熱部と上記第1保護膜を電気的に絶縁させるための絶縁部を更に含む側面放出型線状蒸発源。 In claim 1,
A first protective film formed on the inner surface of the PBN crucible and the surface of the discharge port;
The side emission type linear evaporation source further comprising an insulating part for electrically insulating the first heat generating part and the first protective film.
上記PBN坩堝の開口部を覆うPBN蓋体と、
上記PBN蓋体の外部表面に蒸着され、加熱に適合なパターンが形成された第2発熱部を更に含む側面放出型線状蒸発源。 In claim 1,
A PBN lid that covers the opening of the PBN crucible;
A side-emission linear evaporation source further comprising a second heat generating part deposited on the outer surface of the PBN lid and formed with a pattern suitable for heating.
上記PBN坩堝及び上記放出口の内部表面に蒸着され、上記第1発熱部と電気的に絶縁されている第1保護膜と、
上記PBN蓋体の下側表面に蒸着され、上記第2発熱部と電気的に絶縁されている第2保護膜を更に含む側面放出型線状蒸発源。 In claim 3,
A first protective film deposited on the inner surfaces of the PBN crucible and the discharge port and electrically insulated from the first heat generating part;
A side emission linear evaporation source further comprising a second protective film deposited on the lower surface of the PBN lid and electrically insulated from the second heat generating part.
材料を入れるためのPBN(pyrolytic boron nitride、熱分解窒化ホウ素)坩堝と、
上記PBN坩堝の外部表面に蒸着され、加熱に適合なパターンが形成された第1発熱部と、
PBNで構成された放出部と、
上記PBN放出部の外部表面に蒸着され、加熱に適合なパターンが形成された第2発熱部と、
上記PBN放出部の側面と上記第2発熱部を貫通して形成された側面放出口を含む側面放出型線状蒸発源。 In linear evaporation sources used in vacuum deposition systems,
PBN (pyrolytic boron nitride) crucible for containing materials,
A first heat generating part deposited on the outer surface of the PBN crucible and formed with a pattern suitable for heating;
An emission part composed of PBN;
A second heat generating part deposited on the outer surface of the PBN emitting part and formed with a pattern suitable for heating;
A side emission type linear evaporation source including a side emission port formed through a side surface of the PBN emission unit and the second heat generation unit.
上記PBN坩堝の内部表面に蒸着され、上記第1発熱部と電気的に絶縁されている第1保護膜と、
上記PBN放出部の内部表面及び上記放出口の表面に蒸着され、上記第2発熱部と電気的に絶縁されている第2保護膜を更に含む側面放出型線状蒸発源。 In claim 5,
A first protective film deposited on the inner surface of the PBN crucible and electrically insulated from the first heating part;
A side emission type linear evaporation source further comprising a second protective film deposited on the inner surface of the PBN emission part and the surface of the emission port and electrically insulated from the second heat generating part.
上記第1及び第2発熱部に電流を認可する時に上記第2発熱部の温度が上記第1発熱部の温度より高く維持されるように構成されることを特徴とする側面放出型線状蒸発源。 In any one of Claims 3 thru | or 6,
The side-emission type linear evaporation characterized in that the temperature of the second heat generating part is maintained higher than the temperature of the first heat generating part when current is applied to the first and second heat generating parts. source.
上記発熱部及び保護膜は厚さ1000ミクロメーター以下の熱分解黒鉛(PG、Pyrolytic Graphite)からなることを特徴とする側面放出型線状蒸発源。 In any one of Claims 1 thru | or 6,
The side emission linear evaporation source, wherein the heat generating part and the protective film are made of pyrolytic graphite (PG) having a thickness of 1000 micrometers or less.
上記発熱部のパターンは対称形であることを特徴とする側面放出型線状蒸発源。 In any one of Claims 1 thru | or 6,
A side-emission type linear evaporation source characterized in that the pattern of the heat generating part is symmetrical.
上部と下部の蒸着速度を同じく維持するために上部放出口の間隔が下部放出口の間隔より狭いことを特徴とする側面放出型線状蒸発源。 In claim 1 or claim 5,
A side-emission type linear evaporation source characterized in that, in order to maintain the same deposition rate between the upper part and the lower part, the interval between the upper emission ports is narrower than the interval between the lower emission ports.
上部と下部の蒸着速度を同じく維持するために上部と下部の放出口の間隔を一定に維持しながら、上部放出口の大きさが下部放出口の大きさより大きいことを特徴とする側面放出型線状蒸発源。 In claim 1 or claim 5,
Side emission line characterized in that the size of the upper outlet is larger than the size of the lower outlet while keeping the distance between the upper and lower outlets constant to maintain the same upper and lower deposition rates. Vapor source.
PBN坩堝を準備する段階と、
上記PBN坩堝の外部表面にPGを蒸着して第1発熱層を形成する段階と、
上記PBN坩堝の側面に所定大きさの多数個の放出口を形成する段階と、
上記PBN坩堝の外部表面に形成された上記第1発熱層に加熱に適合なパターンを形成する段階を含む側面放出型線状蒸発源製造方法。 In the linear evaporation source manufacturing method of the vacuum deposition system,
Preparing a PBN crucible;
Depositing PG on the outer surface of the PBN crucible to form a first heat generating layer;
Forming a plurality of discharge ports of a predetermined size on the side surface of the PBN crucible;
A side-emission type linear evaporation source manufacturing method including a step of forming a pattern suitable for heating on the first heat generating layer formed on the outer surface of the PBN crucible.
上記PBN坩堝の上側開口部を覆うためのPBN蓋体を準備する段階と、
上記PBN蓋体の外部表面にPGを蒸着して第2発熱層を形成する段階と、
上記PBN蓋体の外部表面に形成された第2発熱層に加熱に適合なパターンを形成する段階を更に含む側面放出型線状蒸発源製造方法。 In claim 12,
Preparing a PBN lid for covering the upper opening of the PBN crucible;
Depositing PG on the outer surface of the PBN lid to form a second heat generating layer;
A method for manufacturing a side emission type linear evaporation source, further comprising the step of forming a pattern suitable for heating on a second heat generating layer formed on the outer surface of the PBN lid.
PBN坩堝を準備する段階と、
上記PBN坩堝の側面に所定大きさの多数個の放出口を形成する段階と、
上記PBN坩堝の内部及び外部表面にPGを蒸着して上記PBN坩堝の外部表面に第1発熱層と内部表面に第1保護膜を形成する段階と、
上記PBN坩堝外部表面に形成された第1発熱層に加熱に適合なパターンを形成する段階と、
上記第1発熱層と第1保護膜を電気的に絶縁させる絶縁部を形成する段階を含む側面放出型線状蒸発源製造方法。 In the linear evaporation source manufacturing method of the vacuum deposition system,
Preparing a PBN crucible;
Forming a plurality of discharge ports of a predetermined size on the side surface of the PBN crucible;
Depositing PG on the inside and outside surfaces of the PBN crucible to form a first heat generating layer on the outside surface of the PBN crucible and a first protective film on the inside surface;
Forming a pattern suitable for heating on the first exothermic layer formed on the outer surface of the PBN crucible;
A side-emission type linear evaporation source manufacturing method including a step of forming an insulating portion that electrically insulates the first heat generating layer from the first protective film.
上記PBN坩堝を覆い、蒸発のための放出口が形成されたPBN蓋体を準備する段階と、
上記PBN蓋体の内部及び外部表面にPGを蒸着して上記PBN蓋体の外部表面に第2発熱層と内部表面に第2保護膜を形成する段階と、
上記PBN蓋体の外部表面に形成された上記第2発熱層に加熱に適合なパターンを形成する段階と、
上記第2発熱層と上記第2保護膜を電気的に絶縁させるための絶縁部を形成する段階を更に含む側面放出型線状蒸発源製造方法。 In claim 14,
Providing a PBN lid that covers the PBN crucible and has an outlet for evaporation;
Depositing PG on the inside and outside surfaces of the PBN lid and forming a second heat generating layer on the outside surface of the PBN lid and a second protective film on the inside surface;
Forming a pattern suitable for heating on the second heat generating layer formed on the outer surface of the PBN lid;
A method of manufacturing a side-emission linear evaporation source, further comprising forming an insulating part for electrically insulating the second heat generating layer and the second protective film.
PBN坩堝を準備する段階と、
上記PBN坩堝の外部表面にPGを蒸着して第1発熱層を形成する段階と、
上記PBN坩堝の外部表面に形成された上記第1発熱層に加熱に適合なパターンを形成する段階と、
PBN放出部を準備する段階と、
上記PBN放出部の外部表面にPGを蒸着して第2発熱層を形成する段階と、
上記PBN放出部の外部表面に形成された上記第2発熱層に加熱に適合なパターンを形成する段階と、
上記PBN放出部の側面に所定大きさの放出口を形成する段階を含む側面放出型線状蒸発源製造方法。 In the linear evaporation source manufacturing method of the vacuum deposition system,
Preparing a PBN crucible;
Depositing PG on the outer surface of the PBN crucible to form a first heat generating layer;
Forming a pattern suitable for heating on the first heat generating layer formed on the outer surface of the PBN crucible;
Preparing a PBN discharge section;
Depositing PG on the outer surface of the PBN emitting portion to form a second heat generating layer;
Forming a pattern suitable for heating on the second heat generating layer formed on the outer surface of the PBN emitting portion;
A side emission type linear evaporation source manufacturing method including a step of forming an emission port of a predetermined size on a side surface of the PBN emission part.
上記PBN放出部の内部及び外部表面にPGを蒸着して上記PBN放出部の外部表面に第2発熱層と内部表面に第2保護膜を形成する段階と、
上記PBN放出部の外部表面に形成された上記第2発熱層に加熱に適合なパターンを形成する段階と、
上記第2発熱層と上記第2保護膜を電気的に絶縁させるための絶縁部を形成する段階を更に含む側面放出型線状蒸発源製造方法。 In claim 16,
Depositing PG on the inside and outside surfaces of the PBN emitting portion to form a second heat generating layer on the outside surface of the PBN emitting portion and a second protective film on the inside surface;
Forming a pattern suitable for heating on the second heat generating layer formed on the outer surface of the PBN emitting portion;
A method of manufacturing a side-emission linear evaporation source, further comprising forming an insulating part for electrically insulating the second heat generating layer and the second protective film.
上記線状蒸発器は、真空フランジ及び電源供給用電極を含み、上記電源供給用電極を支持台にして、上記線状蒸発源が上記真空フランジに装着されることを特徴とする線状蒸発器。 In claim 18,
The linear evaporator includes a vacuum flange and a power supply electrode, and the linear evaporation source is attached to the vacuum flange with the power supply electrode as a support base. .
上記電源供給用電極は、上記PBN坩堝に形成された側面放出口から所定距離離れた位置に配置されることを特徴とする線状蒸発器。 In claim 19,
The linear evaporator according to claim 1, wherein the power supply electrode is disposed at a position spaced apart from a side discharge port formed in the PBN crucible.
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JP2018109240A (en) * | 2018-02-26 | 2018-07-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Evaporation source |
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