JP2013529257A - 有機半導体製造装置 - Google Patents
有機半導体製造装置 Download PDFInfo
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- JP2013529257A JP2013529257A JP2013514087A JP2013514087A JP2013529257A JP 2013529257 A JP2013529257 A JP 2013529257A JP 2013514087 A JP2013514087 A JP 2013514087A JP 2013514087 A JP2013514087 A JP 2013514087A JP 2013529257 A JP2013529257 A JP 2013529257A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 78
- 238000007740 vapor deposition Methods 0.000 claims abstract description 56
- 238000012546 transfer Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000008021 deposition Effects 0.000 claims abstract description 25
- 238000002347 injection Methods 0.000 claims description 30
- 239000007924 injection Substances 0.000 claims description 30
- 238000003860 storage Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000007921 spray Substances 0.000 abstract description 6
- 238000005507 spraying Methods 0.000 abstract description 5
- 238000005259 measurement Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 23
- 238000000034 method Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000003380 quartz crystal microbalance Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】そのため、有機半導体製造装置は、移送部材に沿って移送される蒸着物質の少なくとも一部が外部に流出するように移送部材の少なくとも一部に形成された露出部と、露出部に隣接して配置されて露出部を通じて流出される蒸着物質の流出量を感知する感知ユニットとを含む。これにより、隣接した噴射部材から噴射される蒸着物質が感知ユニットに蒸着されないのみでなく、それぞれの移送部材から噴射される蒸着物質の噴射量を正確に測定することができる。したがって、透明基板上に蒸着された蒸着物質の厚み測定時における測定の信頼性を向上させることができる。
【選択図】図1
Description
以下、添付の図面により本発明の実施例を詳しく説明するが、本発明はこれらの実施例により限定されるものではない。
Claims (6)
- 基板に蒸着される蒸着物質が貯留されている貯留部材と、前記貯留部材に貯留されている蒸着物質を気化させる加熱部材と、気化した蒸着物質が噴射される噴射部材と、一端は前記貯留部材に連結され、他端は前記噴射部材に連結されて前記貯留部材から前記噴射部材に蒸着物質を移送させる移送部材とを含む有機半導体製造装置において、
前記移送部材に沿って移送される蒸着物質の少なくとも一部が外部に流出するように、前記移送部材の少なくとも一部に形成された露出部と、前記露出部に隣接して配置され前記露出部を通じて流出される蒸着物質の流出量を感知する感知ユニットとを含む有機半導体製造装置。 - 感知ユニットは、
ベース部材と、
前記ベース部材に取り付けられて前記移送部材から遠ざかったり近づく方向に移動する摺動部材と、
前記摺動部材に取り付けられたセンサーと、
を含むことを特徴とする請求項1に記載の有機半導体製造装置。 - 感知ユニットは、
ベース部材と、
前記ベース部材に取り付けられて前記移送部材から遠ざかったり近づく方向に移動する摺動部材と、
前記摺動部材に回転可能に取り付けられた回転部材と、
前記回転部材に取り付けられたセンサーと、
を含むことを特徴とする請求項1に記載の有機半導体製造装置。 - 前記感知ユニットは複数からなり、
前記感知ユニット間に配置されて隣接した感知ユニットに蒸着物質が蒸着されることを防止する、少なくとも一つの蒸着防止部材をさらに含むことを特徴とする請求項1に記載の有機半導体製造装置。 - 前記露出部に形成されて外部に流出される蒸着物質の量を制御するノズルをさらに含むことを特徴とする請求項1に記載の有機半導体製造装置。
- 前記ノズルの直径は1mm〜10mmであることを特徴とする請求項5に記載の有機半導体製造装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0055019 | 2010-06-10 | ||
KR1020100055019A KR101019947B1 (ko) | 2010-06-10 | 2010-06-10 | 유기 반도체 제조장치 |
PCT/KR2010/003809 WO2011155651A1 (ko) | 2010-06-10 | 2010-06-14 | 유기 반도체 제조장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013529257A true JP2013529257A (ja) | 2013-07-18 |
JP5553131B2 JP5553131B2 (ja) | 2014-07-16 |
Family
ID=43938499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013514087A Expired - Fee Related JP5553131B2 (ja) | 2010-06-10 | 2010-06-14 | 有機半導体製造装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5553131B2 (ja) |
KR (1) | KR101019947B1 (ja) |
CN (1) | CN102934253B (ja) |
TW (1) | TWI431831B (ja) |
WO (1) | WO2011155651A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140105670A (ko) * | 2013-02-22 | 2014-09-02 | 삼성디스플레이 주식회사 | 유기 박막 두께 측정 유닛 및 이를 구비한 유기 박막 증착 장치 |
KR102158138B1 (ko) * | 2014-08-07 | 2020-09-23 | 주식회사 선익시스템 | 증착 장치 |
CN105177510B (zh) | 2015-10-21 | 2018-04-03 | 京东方科技集团股份有限公司 | 蒸镀设备及蒸镀方法 |
CN114525474A (zh) * | 2022-03-10 | 2022-05-24 | 武汉华星光电半导体显示技术有限公司 | 蒸镀坩埚及蒸镀装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005281808A (ja) * | 2004-03-30 | 2005-10-13 | Tohoku Pioneer Corp | 成膜源、成膜装置、成膜方法、有機elパネルの製造方法、有機elパネル |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004225058A (ja) * | 2002-11-29 | 2004-08-12 | Sony Corp | 成膜装置および表示パネルの製造装置とその方法 |
JP4013859B2 (ja) * | 2003-07-17 | 2007-11-28 | 富士電機ホールディングス株式会社 | 有機薄膜の製造装置 |
KR100658710B1 (ko) * | 2003-11-24 | 2006-12-15 | 삼성에스디아이 주식회사 | 유기 발광 소자의 수직 증착 방법 및 그 장치 |
KR20060018746A (ko) * | 2004-08-25 | 2006-03-02 | 삼성에스디아이 주식회사 | 유기물 증착 장치 |
KR20070043541A (ko) * | 2005-10-21 | 2007-04-25 | 삼성에스디아이 주식회사 | 박막 증착장치 및 이를 이용한 박막 증착방법 |
JP4844867B2 (ja) * | 2005-11-15 | 2011-12-28 | 住友電気工業株式会社 | 真空蒸着装置の運転方法および真空蒸着装置 |
KR100753145B1 (ko) * | 2005-11-23 | 2007-08-30 | 주식회사 탑 엔지니어링 | 유기발광소자의 유기물질 증착장치 |
-
2010
- 2010-06-10 KR KR1020100055019A patent/KR101019947B1/ko not_active IP Right Cessation
- 2010-06-14 CN CN201080067316.2A patent/CN102934253B/zh not_active Expired - Fee Related
- 2010-06-14 WO PCT/KR2010/003809 patent/WO2011155651A1/ko active Application Filing
- 2010-06-14 JP JP2013514087A patent/JP5553131B2/ja not_active Expired - Fee Related
- 2010-06-17 TW TW099119652A patent/TWI431831B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005281808A (ja) * | 2004-03-30 | 2005-10-13 | Tohoku Pioneer Corp | 成膜源、成膜装置、成膜方法、有機elパネルの製造方法、有機elパネル |
Also Published As
Publication number | Publication date |
---|---|
WO2011155651A1 (ko) | 2011-12-15 |
KR101019947B1 (ko) | 2011-03-09 |
JP5553131B2 (ja) | 2014-07-16 |
CN102934253B (zh) | 2015-06-17 |
TWI431831B (zh) | 2014-03-21 |
TW201145638A (en) | 2011-12-16 |
CN102934253A (zh) | 2013-02-13 |
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