JP2013221986A - Halftone type phase shift mask and method of manufacturing the same, and method of manufacturing semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask in which sensitization of a photoresist is suppressed in corner parts of a shot, and a method of manufacturing the same.SOLUTION: In an exposure area-outside light shielding band arrangement area PSR and a scribe area SR in a halftone type phase shift mask PM, a small hole light shielding band is arranged where small holes are formed at a fixed pitch without pitch inconsistencies and continuously.

Description

  The present invention relates to a halftone phase shift mask, a method for manufacturing the same, and a method for manufacturing a semiconductor device using the same, and is particularly suitable for a phase shift mask made of a single-layer halftone film.

  When manufacturing a semiconductor device including a semiconductor integrated circuit, as in an ion implantation process to a predetermined region in a semiconductor substrate or the like, an etching process to a film to be processed formed on the surface of the semiconductor substrate, etc. Selective processing (processing) is performed. As the film to be processed, various types of films such as a silicon oxide film, a silicon nitride film, a polysilicon film, and an aluminum film are used.

  In such a process, for the purpose of selectively protecting a film to be processed, a pattern of a composition sensitive to actinic rays such as ultraviolet rays, X-rays and electron beams, a so-called photosensitive photoresist film (photoresist film) is formed. Lithography is performed on the film to be processed. In this lithography, in particular, pattern formation by a photoresist film using ultraviolet rays is most widely used.

  Then, the circuit pattern drawn on the photomask is repeatedly exposed to the photoresist film coated on the film to be processed using a reduction projection exposure apparatus called a stepper or a scanner. Usually, a plurality of device chips are arranged on the photomask, and a plurality of device chips are simultaneously exposed by one exposure (shot).

  In recent years, as the integration and performance of semiconductor integrated circuits have increased, miniaturization of circuit patterns and high-precision dimensional control have been demanded. In the exposure apparatus, the wavelength of the exposure light source is shortened from g-line (wavelength = 436 nm) of mercury lamp to i-line (wavelength = 365 nm), KrF excimer laser (wavelength = 248 nm), and ArF excimer laser (wavelength = 193 nm). Has been promoted. Recently, an immersion exposure technique has also appeared that can improve the resolution by filling water (pure water) between the reduction projection lens of the exposure apparatus and the photoresist film applied on the semiconductor substrate. The life of ultraviolet lithography has been extended.

  On the other hand, various types of phase shift masks have been developed for photomasks, and higher resolution than conventional binary masks can be obtained. Of these, halftone phase shift masks are most widely used. The halftone phase shift mask is a photomask in which a film (halftone film) that is translucent to exposure light is formed on a blank (quartz substrate).

  In the halftone film, the transmittance of exposure light is several percent, generally about 1 to 10%. In addition, the phase of the light transmitted through the halftone film and the phase of the light transmitted through the portion where the halftone film is removed are designed to be inverted by 180 °. As such a halftone film, an inorganic film such as MoSi, CrFO, TaSiO, MoSiN, SiON, SiN, or ZrSiO is used.

  Incidentally, a region called a scribe region is provided around the semiconductor chip formed on the semiconductor wafer. After the wafer process is completed, the device chip is separated by dicing the scribe region. In the scribe area, various marks for lithography, inspection patterns for product management, and the like are arranged. In the photomask, in order to increase the accuracy of overlay inspection and dimensional inspection, at least four places in the scribe area arranged so as to surround the outermost periphery of the semiconductor chip area, preferably as close as possible to the four corners of the shot, Various marks and inspection patterns are formed.

  In addition, in an exposure apparatus in which a photomask is set, an aperture called a masking blade is provided in order to irradiate exposure light on an exposure area of the photomask and transfer the pattern to the photoresist. However, depending on the position of the aperture with respect to the photomask, and because the aperture and the photomask are separated from each other, the diffracted light of the exposure light that has passed through the aperture other than the region to be irradiated with the exposure light in the photoresist. The area may be irradiated. For this reason, in the photomask, a light shielding band (outside the exposure area light shielding band arrangement area) that shields the exposure light (diffracted light) is disposed in an area outside the scribe area located on the outermost periphery.

  As a light shielding band of such a photomask, a halftone phase shift mask of Patent Document 1 has proposed a light shielding band in which minute holes below the resolution limit are arranged at a constant pitch on a halftone film. In this shading band, the phase of the exposure light that has passed through the halftone film is reversed with respect to the phase of the exposure light that has passed through the minute holes, so that the exposure light is shielded by light diffraction and interference. become.

  The pattern of the photomask including the halftone phase shift mask is reduced by a reduction projection exposure apparatus, and is sequentially transferred (shot) to the photoresist applied to the semiconductor wafer. At this time, in order to form more semiconductor chips on the semiconductor wafer, the scribe located on the outermost periphery transferred by the next shot is compared to the pattern of the scribe area located on the outermost periphery transferred by one shot. There is an exposure method in which a pattern of a region is overlaid.

  As described above, marks and the like are formed in the scribe region located on the outermost periphery. In order to reliably transfer the patterns such as marks to the photoresist, it is necessary to dispose a light-shielding band in a predetermined region in the scribe region.

  Here, in the photomask, for example, one mark is arranged in one scribe area of the outermost scribe areas facing each other with an interval in one direction, and one mark is arranged in the other scribe area. It is assumed that other marks are arranged at a position different from the position facing the class. Then, in the next shot, the pattern of the other scribe area is transferred to the pattern of one scribe area transferred in one shot.

  At this time, it is necessary to prevent exposure light from being irradiated in the next shot with respect to the pattern of marks transferred to one scribe region in one shot. That is, in the other scribe region, it is necessary to arrange a light shielding band at a portion facing one mark. Further, it is necessary to prevent the exposure light from being irradiated on the portion where the marks of the other scribe area are transferred in the next shot. That is, in one scribe region, it is necessary to dispose a light shielding band in a portion facing the other marks.

  Furthermore, it is necessary to similarly arrange a light-shielding band in relation to the marks for other outermost scribe regions facing each other with a gap in the other direction orthogonal to one direction.

  As described above, as a photomask, as a patent document disclosing a halftone phase shift mask in which a mark is not opposed to a scribe region facing the photomask and a shading band is disposed in a portion facing the mark, There exists patent document 2. FIG. Such a scribe region is also referred to as a concavo-convex scribe structure because of the superposition of its planar shape.

JP-A-7-219204 JP-A-11-202472

  As described above, in a photomask including a halftone phase shift mask, it is necessary to dispose a light-shielding band that shields exposure light in a region outside the outermost scribe region. Further, in the scribe area, it is necessary to arrange a light shielding band at a predetermined portion in relation to the marks.

  When a shot is performed while sequentially superposing the patterns of the scribe areas located on the outermost periphery, the portion of the photoresist to which the pattern of the scribe areas located on the outermost periphery is transferred is double-exposed. Further, the portion of the photoresist corresponding to the corner portion of the scribe region is subjected to quadruple exposure.

  This time, as a shading band that shields the exposure light, the arrangement of the minute hole shading band by the minute hole is such that the multiple hole exposure is performed, the minute hole shading band in the outermost scribe region and the minute hole in the outer region. It has been confirmed by the inventors for the first time that the formation of the photoresist pattern is adversely affected in the portion adjacent to the hole shading zone. The inventors have also confirmed for the first time that the formation of the photoresist pattern is adversely affected even in the portion where the minute hole shading zone and the minute hole shading zone are adjacent in the outermost scribe region.

  Other problems and novel features will become apparent from the description of the specification and the accompanying drawings.

  In the first light-shielding region and the second light-shielding region of the halftone phase shift mask according to the embodiment, minute holes below the resolution limit with respect to the exposure light are formed on the halftone film with a constant pitch. A minute hole shading band formed continuously without mismatch is arranged.

  A method for manufacturing a halftone phase shift mask according to another embodiment includes a non-exposure-area light-shielding band arrangement area and a predetermined area in the scribe area as one area, which is below the resolution limit for predetermined exposure light. There is a step of creating design data of a minute hole shading zone in which the minute holes are continuously arranged at a constant pitch without any pitch mismatch.

  Still another method of manufacturing a semiconductor device includes a step of processing a film to be processed by applying the halftone phase shift mask according to one embodiment.

  According to the halftone phase shift mask according to one embodiment, unintended photoresist exposure is suppressed.

  According to the method of manufacturing a halftone phase shift mask according to another embodiment, a halftone phase shift mask that suppresses unintended photoresist exposure can be obtained.

  Further, according to another method for manufacturing a semiconductor device, patterning with high dimensional accuracy can be performed on a film to be processed.

It is a figure which shows the flowchart of the manufacturing method of the halftone type phase shift mask which concerns on Embodiment 1. FIG. In the same embodiment, it is a top view which shows the design data of the device chip area | region in one process of the manufacturing method of a halftone type phase shift mask as a pattern. In the same embodiment, it is a top view which shows the design data of the scribe area | region in the same process as a pattern. In the same embodiment, it is a top view which shows the design data of the shading zone arrangement | positioning area | region outside an exposure area | region in the same process as a pattern. FIG. 2 is a plan view showing, as a pattern, design data obtained by superimposing design data of a device chip region, a scribe region, and an outside exposure region shading zone arrangement region, which is performed after the steps shown in FIGS. It is. FIG. 6 is a partial plan view for explaining a step of arranging minute holes performed after the step shown in FIG. 5 in the embodiment. FIG. 7 is a partial plan view showing, as a pattern, design data of a minute hole shading band formed by arranging minute holes after the step shown in FIG. 6 in the same embodiment. FIG. 7 is a plan view showing, as a pattern, design data of a halftone phase shift mask including a minute hole shading band by minute holes after the step shown in FIG. 6 in the embodiment. FIG. 9 is a plan view showing the halftone phase shift mask manufactured based on the design data of the halftone phase shift mask after the step shown in FIG. 8 in the embodiment. FIG. 10 is a partial cross-sectional view taken along a cross-sectional line XX shown in FIG. 9 in the same embodiment. FIG. 10 is a partially enlarged plan view showing the inside of a dotted line frame shown in FIG. 9 in the same embodiment. In the same embodiment, it is the 1st graph which shows the relation between the size of a minute hole, and the transmittance of exposure light. In the same embodiment, it is a 2nd graph which shows the relationship between the size of a micro hole, and the transmittance | permeability of exposure light. In the same embodiment, it is a graph which shows the relationship between the distance from the edge part of a micro hole light-shielding zone, and the transmittance | permeability of exposure light. In the same embodiment, it is a graph which shows the relationship between the distance between minute hole light-shielding bands, and the transmittance | permeability of exposure light. In the same embodiment, it is a diagram showing the layout of the minute hole shading band and the distribution of the transmittance of exposure light, (A) is a partial plan view showing the layout of the corner inner portion of the minute hole shading band, B) is a partial plan view showing a distribution of exposure light transmittance according to the layout. In the same embodiment, it is a diagram showing the layout of the minute hole shading band and the distribution of the transmittance of the exposure light, (A) is a partial plan view showing the layout of the joint portion of the minute hole shading band, B) is a partial plan view showing a distribution of exposure light transmittance according to the layout. It is a top view which shows the halftone type | mold phase shift mask which concerns on a comparative example. It is a partial enlarged plan view which shows the inside of the dotted-line frame shown in FIG. FIG. 6 is a partial plan view showing a corner portion in a halftone phase shift mask for explaining the transmittance of exposure light due to superposition of shots in the embodiment. FIG. 6 is a partial perspective view showing a first shot with respect to a photoresist, for explaining a transmittance of exposure light due to superposition of shots in the embodiment. In the same embodiment, it is a partial perspective view showing a second shot for the photoresist, for explaining the transmittance of the exposure light by the superposition of shots. FIG. 10 is a partial perspective view showing a third shot with respect to the photoresist for explaining the transmittance of exposure light by the superposition of shots in the embodiment. FIG. 10 is a partial perspective view showing a fourth shot with respect to a photoresist, for explaining a transmittance of exposure light due to superposition of shots in the embodiment. In the same embodiment, it is a partial plan view for explaining the transmittance of exposure light due to the superposition of four shots. In the same embodiment, it is a figure which shows the transmittance | permeability of the exposure light of the predetermined location in the corner part of the halftone type phase shift mask by one shot. In the same embodiment, it is a figure which shows the transmittance | permeability of the exposure light of the predetermined location in the corner part of the halftone type | mold phase shift mask by superimposition of four shots. FIG. 10 is a plan view showing a halftone phase shift mask according to Modification 1 in the embodiment. FIG. 10 is a plan view showing, as a pattern, design data of a device chip region in one step of a method for manufacturing a halftone phase shift mask according to Modification 1 in the embodiment. In the same embodiment, it is a top view which shows the design data of the scribe area | region in the same process as a pattern. In the same embodiment, it is a top view which shows the design data of the shading zone arrangement | positioning area | region outside an exposure area | region in the same process as a pattern. FIG. 29 is a plan view showing, as a pattern, design data obtained by superimposing design data of a device chip area, a scribe area, and an outside exposure area shading band arrangement area, which is performed after the steps shown in FIGS. 29 to 31 in the embodiment. It is. In the same embodiment, it is a top view which shows the design data of the photomask containing the micro hole shading zone by a micro hole as a pattern. FIG. 10 is a plan view showing a halftone phase shift mask according to Modification 2 in the embodiment. In the same embodiment, it is the fragmentary perspective view which shows the 1st shot with respect to the photoresist by the halftone type phase shift mask which concerns on the modification 2. FIG. FIG. 10 is a partial perspective view showing a second shot for a photoresist using a halftone phase shift mask according to Modification 2 in the embodiment. In the same embodiment, it is a top view which shows the halftone type | mold phase shift mask which concerns on the modification 3. FIG. FIG. 38 is a partially enlarged plan view showing the inside of a dotted line frame shown in FIG. 37 in the same embodiment. FIG. 6 is a flowchart illustrating a method for manufacturing a semiconductor device to which a halftone phase shift mask is applied according to a second embodiment. FIG. 10 is a cross-sectional view showing a step of the method of manufacturing a semiconductor device to which the halftone phase shift mask is applied in the embodiment. FIG. 41 is a cross-sectional view showing a process performed after the process shown in FIG. 40 in the same embodiment. FIG. 42 is a cross-sectional view showing a process performed after the process shown in FIG. 41 in the same Example. FIG. 43 is a cross-sectional view showing a step performed after the step shown in FIG. 42 in the same embodiment. FIG. 44 is a cross-sectional view showing a step performed after the step shown in FIG. 43 in the same embodiment. FIG. 45 is a cross-sectional view showing a step performed after the step shown in FIG. 44 in the same embodiment. FIG. 46 is a cross-sectional view showing an exposure step using a halftone phase shift mask performed after the step shown in FIG. 45 in the embodiment. FIG. 47 is a cross-sectional view showing a step performed after the step shown in FIG. 46 in the same embodiment. FIG. 48 is a cross-sectional view showing a step performed after the step shown in FIG. 47 in the same embodiment. FIG. 49 is a cross-sectional view showing a step performed after the step shown in FIG. 48 in the same embodiment. FIG. 50 is a cross-sectional view showing a step performed after the step shown in FIG. 49 in the same embodiment.

Embodiment 1
First, a method for manufacturing the halftone phase shift mask according to the first embodiment will be described based on a flowchart.

  In step S1 shown in FIG. 1, design data DRD for the device chip area shown in FIG. 2, design data SRD for the scribe area shown in FIG. 3, and design data PSRD for the out-of-exposure light shielding band arrangement area shown in FIG. 4 are prepared. Is done. The design data SRD for the scribe area includes design data MRD for various marks and inspection patterns (marks and the like). The width of the scribe area is about 50 to 100 μm, and the width of the light shielding band arrangement area outside the exposure area is about 300 to 500 μm.

  Next, in step S2, the design data DRD for the device chip area, the design data SRD for the scribe area, and the design data PSRD for the non-exposure area shading band arrangement area are combined, and as shown in FIG. Design data PMD for a halftone phase shift mask corresponding to the halftone phase shift mask is created. In this halftone phase shift mask design data PMD, four pieces of design data DRD of a device chip region as a product are arranged in one halftone phase shift mask design data PMD.

  Next, in step S3, the design data PSRD of the non-exposure light-shielding band arrangement area and the design data of the area where the light-shielding band is to be arranged among the design data SRD of the scribe area are combined, and the area where the marks are arranged is determined. Except for this, design data FHSD (see FIG. 7) of the minute hole shading zone by minute holes is created.

  Here, a method for arranging the minute holes will be described. First, data on minute holes having a pitch and size optimized in advance are prepared. The optimized pitch and size will be specifically described later. As shown in FIG. 6, based on the pitch and size, design data FHPD of a minute hole shading pattern in which minute holes are formed in a pattern corresponding to a rectangular halftone film is created as a basic pattern (unit pattern). The

  Next, the minute hole shading pattern (design data FHPD) is arranged at an arbitrary starting point. In this case, as an example, a corner portion where the outside-exposed-area light shielding band arrangement area (design data PSRD) and the scribe area (design data SRD) are in contact is set as a starting point.

  Next, the scribe area (design data SRD) located at the outermost periphery in the scribe area and the non-exposure-area light shielding band arrangement area (design data PSRD) are regarded as one area, and a minute hole light shielding pattern (design data FHPD) is obtained. Arrangement is made from the starting point along the X-axis direction and the Y-axis direction so that no gaps or overlaps occur. At this time, as shown in FIG. 7, when a fraction occurs in the non-exposure-area light-shielding band arrangement area (design data PSRD), the minute hole light-shielding pattern (design data) is placed outside the non-exposure-area light-shielding band arrangement area. (FHPD) is arranged one row more.

  This is because the out-of-exposure-area light-shielding band arrangement area is an area that shields the diffracted light of the exposure light, so that the minute hole light-shielding pattern (design data FHPD) that shields the exposure light is moved beyond the original range to the exposure area. This is because there is no problem in arranging the outer light shielding band arrangement region (design data PSRD) outside.

  On the other hand, when a fraction occurs on the area to be shielded in the scribe area (design data SRD), the minute hole shading pattern (design data FHPD) is arranged in a range not exceeding the scribe area (constraint J1). This is because when a minute hole shading pattern (design data FHPD) is arranged in the device chip region (design data DRD) beyond the scribe region, a portion having a higher transmittance than the transmittance of the halftone film is formed in the device chip region ( This is because the photoresist is exposed to light in the design data DRD). The same applies to the mark arrangement area (design data MRD) in the scribe area (constraint J2). This will be described with reference to FIG.

  In addition, as a starting point for arranging the minute hole shading pattern (design data FHPD), the corner portion where the non-exposure shielding zone arrangement area (design data PSRD) and the scribe area (design data SRD) are in contact with each other is taken as an example. The start point is not limited to such a start point, and is within the limits of the scribe area (design data SRD) excluding the mark arrangement area (design data MRD) and the non-exposure light shielding area (design data PSRD). And any starting point on the premise of complying with the constraint J2.

  By arranging the minute hole shading pattern (design data FHPD) in this way, as shown in FIG. 8, the area to be shielded in the non-exposure shading zone arrangement area (design data PSRD) and the scribe area (design data SRD). Then, design data PMD of a halftone phase shift mask in which a minute hole shading band (design data FHSD) based on a minute hole shading pattern (design data FHPD) is arranged is created.

  Next, in step S4, by performing electronic drawing based on the design data PMD of the halftone phase shift mask including the minute hole shading band (design data FHSD), the halftone phase shift mask having the minute hole shading band is obtained. Manufactured.

  As shown in FIGS. 9 and 10, the manufactured halftone phase shift mask PM includes a device chip region DR, a scribe region SR, and an exposure region by a single-layer halftone film HT formed on the quartz glass QG. Each pattern of the outer light shielding band arrangement region PSR is formed. Then, as shown in FIG. 11, the minute hole shading band FHS is arranged in the area to be shielded in the non-exposure-area shading band arrangement area PSR and the scribe area SR. In the minute hole shading zone FHS, minute holes FH having a resolution below the resolution limit with respect to the exposure light are continuously formed with a constant pitch and no pitch mismatch.

  In the minute hole shading zone FHS in the above-described halftone phase shift mask PM, it is important that the minute holes are continuously arranged without pitch mismatch. Next, the reason will be described.

  First, a minute hole light shielding pattern for obtaining an effective light shielding property in a single-layer halftone phase shift mask will be described. Here, as an example of this, i-line exposure (wavelength = 365 nm) is used, and a halftone type having a transmittance of 4% under an illumination condition of numerical aperture NA = 0.57 and coherent factor σ = 0.40. A case where a phase shift mask is used will be described.

  According to the result of optical calculation, under this condition, exposure light can be completely shielded if the pitch of minute holes is 430 nm or less. As shown in FIG. 12, when the pitch of the minute holes is 430 nm, even if the size S of the minute holes is changed, there is almost no difference in the transmittance distribution (maximum value and minimum value). In particular, when the size of the minute hole is 180 nm, it is understood that the minimum value (˜0%) is obtained as the transmittance.

  On the other hand, for comparison, FIG. 13 shows a calculation result when the pitch of the minute holes is 500 nm. As shown in FIG. 13, it can be seen that when the size S of the minute holes is changed, a difference is observed in the transmittance distribution (maximum value and minimum value). Moreover, the value of average transmittance is also higher than the average transmittance when the pitch of minute holes is 430 nm, and it can be seen that sufficient light shielding properties cannot be obtained.

  Next, from this result, the following evaluation (calculation) was performed by setting the length of one side as 180 nm and the pitch as 430 nm as the size of the minute hole. First, the transmittance characteristics of the boundary portion of the light shielding band due to the minute holes will be described. It has been found that the transmittance of the exposure light increases at the boundary portion between the light shielding band and the device chip region in the scribe region, that is, at the boundary between the minute hole light shielding zone and the halftone film portion.

  FIG. 14 shows the result of calculating the exposure light transmittance in the vicinity of the boundary between the minute hole shading zone and the halftone film portion and the vicinity thereof. As shown in FIG. 14, the transmittance of the exposure light is 4% in the halftone film portion where the distance L is sufficiently far from the boundary between the minute hole shading zone and the halftone film portion. Further, in the minute hole shading zone, the transmittance of exposure light is 0%.

  Then, as the distance L gradually increases from the boundary between the minute hole shading zone and the halftone film portion, the transmittance of the exposure light increases, and the transmittance of the exposure light is maximized at a position about 400 nm away from the boundary ( Maximum) and 5.5%. This is the reason why the minute hole shading pattern (design data FHPD) should not be placed beyond the scribe area when a fraction occurs on the area to be shielded in the scribe area (design data SRD).

  Next, FIG. 15 shows the calculation result of the transmittance of the exposure light when the pitch of the minute holes collapses at the boundary between two adjacent minute hole shading bands. As shown in FIG. 15, when the interval between two minute holes is 720 nm apart, the transmittance of exposure light is maximized to 6.5%. Note that the distance between the minute hole and the minute hole in the minute hole shading zone is 250 nm.

  16 and 17 show the layout of the minute hole light-shielding band and the distribution of the transmittance of exposure light. First, the inside of the corner portion of the minute hole shading band FHS shown in FIG. In this case, as shown in FIG. 16B, the transmittance of exposure light is 5.5% along the boundary between the minute hole shading zone FHS and the halftone film portion. Moreover, the transmittance of the exposure light is further increased to 6.9% inside the corner portion of the minute hole shading band FHS.

  Next, the boundary (joint) between the two minute hole shading bands shown in FIG. Here, the distance between one minute hole shading zone and the other minute hole shading zone is 720 nm. In this case, as shown in FIG. 17B, the transmittance of the exposure light is 6.5% in the region between one minute hole shading zone and the other minute hole shading zone. In the corner portion of the region, the exposure light transmittance is further increased to 7.2%.

  Next, based on these results, the amount of exposure light transmitted at the corner portion (shot corner) of the scribe region located on the outermost periphery and in the vicinity thereof was estimated as a cumulative value of transmittance. First, for this estimation, a halftone phase shift mask having a pitch mismatch in the minute hole shading zone was used as a comparative example.

  As shown in FIGS. 18 and 19, in the halftone phase shift mask PMC according to the comparative example, the minute hole shading band FHSC arranged in the scribe region SRC and the minute hole arranged in the non-exposure region shielding band arrangement region PSRC. A region (pitch mismatch PMM) having a pitch longer than a predetermined pitch is disposed between the hole shading zone FHSC.

  In addition, as a code | symbol of the halftone type phase shift mask PMC which concerns on a comparative example, for simplification of description, each part of the halftone type phase shift mask PM which concerns on corresponding embodiment (refer FIG. 9, FIG. 11) The code with “C” added at the end is used, and the description thereof will not be repeated.

  Further, in the halftone phase shift mask PM according to the embodiment and the halftone phase shift mask PMC according to the comparative example, the transmittance of exposure light at a predetermined boundary and corner is defined as follows. As shown in FIG. 20, the transmittance of exposure light in the straight line portion (region A) of the boundary between the minute hole shading zone of the scribe region SR (SRC) and the device chip region DR (DRC) is TA, and the corner portion. The exposure light transmittance in (region B) was TB.

  Of the boundary between the minute hole shading band of the scribe region SR (SRC) and the non-exposure-shading zone arrangement region PSR (PSRC), the transmittance of the exposure light in the straight portion (region C) is TC, and the corner portion ( The transmittance of exposure light in region D) was taken as TD.

  Next, for the photoresist applied to the wafer, the exposure process (shot) that is a quadruple exposure and the exposure light transmission amount (transmittance) in the vicinity of the corner are shot focusing on one corner part. Explain as you follow.

  First, FIG. 21 shows the exposure amount (transmittance TA1, TB1, TC1, TD1) of exposure light irradiated to the photoresist PR by the first shot. Next, in FIG. 22, the exposure amount (transmittance TA2, TB2, TC2, TD2) of the exposure light irradiated to the photoresist PR by the second shot is irradiated by the first shot in a manner in which the scribe areas are overlapped. The accumulated exposure amount (transmittance) is shown.

  Next, in FIG. 23, the exposure amount (transmittance TA3, TB3, TC3, TD3) of the exposure light irradiated to the photoresist PR by the third shot is irradiated by the first shot in a manner in which the scribe areas are overlapped. The accumulated exposure amount (transmittance) and the exposure amount (transmittance) irradiated by the second shot are shown.

  Then, in FIG. 24, the exposure amount of the exposure light (transmittance TA4, TB4, TC4, TD4) irradiated to the photoresist PR by the fourth shot in a manner in which the scribe areas are overlapped is irradiated by the first shot. It is shown by accumulating the exposure amount (transmittance) irradiated by the exposure amount (transmittance) and the second shot and the exposure amount (transmittance) irradiated by the third shot.

  At one corner portion and its vicinity in the photoresist, the exposure amount is as follows by four shots. As shown in FIG. 25, at the boundary (solid line portion) between the device chip region and the scribe region, the exposure amount corresponding to the transmittance TA for one shot (= TA1 = TA2 = TA3 = TA4) and the amount for one shot. Exposure light is combined with an exposure amount corresponding to the transmittance TC (= TC1 = TC2 = TC3 = TC4).

  On the side (dotted line portion) where the scribe areas intersect each other, exposure light having an exposure amount corresponding to the transmittance TC (= TC1 = TC2 = TC3 = TC4) for two shots is irradiated. At the corner (circled portion) of the device chip area, the exposure amount corresponding to the transmittance TB for one shot (= TB1 = TB2 = TB3 = TB4) and the transmittance TC for two shots (= TC1 = TC2). = TC3 = TC4) and exposure light that combines the exposure amount corresponding to the transmittance TD (= TD1 = TD2 = TD3 = TD4) for one shot is irradiated.

  Here, a specific numerical example of each transmittance in the halftone phase shift mask according to the embodiment and the halftone phase shift mask according to the comparative example will be described. As shown in FIG. 26, the exposure light transmittance TA in the linear portion (region A) is the halftone phase shift mask according to the embodiment and the half according to the comparative example, as described with reference to FIG. Both tone type phase shift masks are 5.5%. In addition, as shown in FIG. 16B, the exposure light transmittance TB in the corner (region B) is the halftone phase shift mask according to the embodiment and the halftone phase shift mask according to the comparative example. It is 6.9%.

  In the halftone phase shift mask according to the embodiment, the transmittance TC of exposure light in the straight line portion (region C) is as shown in FIG. 11 because minute holes are arranged without pitch mismatch. 0%. On the other hand, in the halftone phase shift mask according to the comparative example, there is a pitch mismatch as shown in FIG. For this reason, as described with reference to FIG. 17B, the transmittance TC is 6.5%. This transmittance is a numerical value (maximum value) when the distance between the minute holes is 720 nm (see FIG. 17A).

  In the halftone phase shift mask according to the embodiment, the transmittance TD of the exposure light in the corner portion (region D) is as shown in FIG. 11 because the minute holes are arranged without pitch mismatch. 0%. On the other hand, in the halftone phase shift mask according to the comparative example, there is a pitch mismatch as shown in FIG. For this reason, as described with reference to FIG. 17B, the transmittance TC is 7.2%.

  Next, based on these transmittances, the transmittance (cumulative value) of one corner portion of the photoresist and the exposure light in the vicinity thereof is shown in FIG. As shown in FIG. 27, in the case of the halftone phase shift mask according to the comparative example, the transmittance is 12% at the boundary (solid line portion) between the device chip region and the scribe region. Moreover, the transmittance | permeability will be 13% in the part (dotted line part) of the part which scribe area | regions cross | intersect. Then, the transmittance is 27.1% at the corner portion (circled portion) of the device chip region.

  For this reason, in the halftone phase shift mask according to the comparative example, the film thickness is reduced in the portion of the photoresist located in the region where the exposure light transmittance is high, and the photoresist may come off depending on the conditions. .

  As a halftone phase shift mask according to the comparative example, a case where the distance between the minute holes is 720 nm (see FIG. 17A) is taken as an example of the pitch mismatch of the minute holes. This problem is not limited to this case.

  When creating the design data for the halftone phase shift mask, there is no particular restriction when placing a micro hole shading band with a micro hole shading pattern in the out-of-exposure shading band arrangement area and the scribe area. When the light shielding pattern is arranged, the pitch of the minute holes is broken at the boundary between the outside-exposed-area light-shielding band arrangement area and the scribe area, resulting in a pitch mismatch.

  For this reason, in the halftone phase shift mask (see FIG. 19) in which such a pitch mismatch has occurred, the transmittance of the exposure light in the portion where the pitch mismatch has occurred is increased, and the photoresist The film will be reduced. The above-mentioned estimation of the transmittance is a numerical value when the transmittance of the exposure light of the halftone film is 4%, and the influence of the transmitted exposure light becomes larger as the halftone film has a higher transmittance. The problem caused by the pitch mismatch was first clarified by the inventors this time.

  On the other hand, in the case of the halftone phase shift mask according to the embodiment, the transmittance is 5.5% at the boundary (solid line portion) between the device chip region and the scribe region. Further, the transmittance is 0% at the side (dotted line portion) where the scribe regions intersect. Then, the transmittance is 6.9% at the corner portion (circled portion) of the device chip region.

  Thus, it can be seen that the halftone phase shift mask according to the embodiment has a much lower exposure light transmittance than the halftone phase shift mask according to the comparative example. In the halftone phase shift mask according to the embodiment, the out-of-exposure light shielding band arrangement region PSR and the scribe region SR (see FIG. 9) are regarded as one region, and a minute hole (a minute hole light shielding pattern) is formed in the region. As a result of the arrangement, there is no occurrence of inconsistency in the pitch of the minute holes at the boundary between the outside-exposed-area light-shielding band arrangement area PSR and the scribe area SR.

  As a result, compared to the case of the halftone phase shift mask according to the comparative example, photosensitivity of the photoresist at the corner portion of the shot can be suppressed, and the film loss of the photoresist can be suppressed. A pattern can be formed reliably. In addition, by forming a micro hole shading band with micro holes in the halftone film, it is compared with a halftone phase shift mask having a multilayer structure in which another shielding film such as a chromium film is formed on the halftone film. And manufacturing cost can be held down.

(Modification 1)
In the halftone phase shift mask shown in FIG. 9 described above, the case where the minute hole light-shielding band by the minute holes is arranged in all the scribe regions has been described. In addition to this, as shown in FIG. 28, the micro hole shading band is arranged in a scribe area SR located between the device chip area DR and the non-exposure area shading band arrangement area PSR, that is, on the outermost periphery. The minute hole shading band FHS may be arranged only in the scribe region SR located.

  The method for manufacturing the halftone phase shift mask is substantially the same as the method for manufacturing the halftone phase shift mask shown in FIG. First, design data DRD for the device chip area shown in FIG. 29, design data SRD for the scribe area shown in FIG. 30, and design data PSRD for the non-exposure light shielding band arrangement area shown in FIG. 31 are prepared.

  Next, the design data DRD for the device chip area, the design data SRD for the scribe area, and the design data PSRD for the non-exposure area shading band arrangement area are combined to form one halftone type as shown in FIG. Design data PMD of a halftone phase shift mask corresponding to the phase shift mask is created. In this halftone phase shift mask design data PMD, four pieces of design data of a device chip area as a product are arranged in one halftone phase shift mask design data PMD.

  Next, the design data PSRD for the out-of-exposure light-shielding band arrangement area and the design data for the area where the light-shielding band should be arranged among the design data SRD for the scribe area are synthesized. Then, by arranging the minute hole shading pattern (design data FHPD) as the basic pattern (unit pattern) by the same method as described above, the design data FHSD of the minute hole shading band is included as shown in FIG. Halftone phase shift mask design data PMD is created.

  Next, by performing electronic drawing based on the design data PMD of the halftone phase shift mask, as shown in FIG. 28, a halftone phase shift mask PM having a minute hole shading band FHS by minute holes is manufactured. Is done.

  Here, the electronic drawing includes a raster scan method and a vector scan method. The raster scan method is a method of drawing while moving the stage continuously. On the other hand, the vector scanning method is a method of scanning an electron beam by moving the stage only to a region where a pattern is formed. For this reason, when a halftone type phase shift mask is manufactured using a vector scan type drawing apparatus as a drawing apparatus, the throughput changes depending on the drawing area.

  In the halftone phase shift mask according to the first modification, the throughput in manufacturing the halftone phase shift mask is formed by forming the minute hole shading band FHS by the minute holes only in the scribe region SR located on the outermost periphery. Can be shortened.

(Modification 2)
As a method of arranging the minute hole shading band, the minute hole shading band may be arranged only in a predetermined area in the scribe area located on the outermost periphery facing the mark arrangement area arranged in the scribe area. . As shown in FIG. 34, it is assumed that, for example, mark arrangement areas MR1 to MR4 are arranged in the scribe area SR in the halftone phase shift mask PM.

  In this case, the minute hole light-shielding bands FHS1 and FHS2 are arranged in the scribe region SR facing the mark arrangement regions MR1 and MR2, respectively. Further, the minute hole light-shielding bands FHS3 and FHS4 are arranged in the scribe region SR facing the mark arrangement regions MR3 and MR4, respectively. It should be noted that a minute hole light-shielding band is necessarily arranged at the corner of the scribe area RS where the mark arrangement area is not arranged.

  Here, the reason why the minute hole shading band must be arranged in the part of the scribe area facing the mark arrangement area will be described.

  In the concavo-convex scribe structure, exposure (shot) is performed while the pattern of the other scribe area is superimposed on the pattern of one scribe area facing each other. First, as shown in FIG. 35, patterns MR1P, MR2P, MR3P, MR4P, etc., such as mark arrangement regions MR1, MR2, MR3, MR4, etc. are transferred to the photoresist PR by one shot.

  As shown in FIG. 36, in the next shot, the mark arrangement regions MR3 and MR4 are overlapped with the pattern of the scribe region to which the patterns MR1P and MR2P of the mark arrangement regions MR1 and MR2 are transferred by one shot. The pattern of the arranged scribe region SR is transferred.

  At this time, it is necessary to prevent exposure light from being irradiated by the next shot onto the portions of the patterns MR1P and MR2P of the mark arrangement regions MR1 and MR2 transferred in one shot. For this reason, it is necessary to dispose the minute hole light-shielding bands FHS1 and FHS2 in the portions of the scribe region SR facing the mark arrangement regions MR1 and MR2, respectively.

  On the other hand, in this shot, it is necessary to prevent exposure light from being irradiated to the portion where the patterns MR3P and MR4P of the mark arrangement regions MR3 and MR4 are transferred. For this reason, it is necessary to dispose the minute hole light-shielding bands FHS3 and FHS4 in the portions of the scribe region SR facing the mark arrangement regions MR3 and MR4, respectively.

  In the halftone type phase shift mask PM according to this modification, the minute hole shading band is arranged only in a predetermined region in the scribe region, which is opposed to the mark arrangement region arranged in the scribe region, so that the halftone type The drawing throughput when manufacturing the phase shift mask PM can be further shortened.

  Note that the halftone phase shift mask PM according to this modification has no effect on the surface of the photoresist even if the scribe region where the minute hole shading zone is not disposed is exposed (shot). It can be applied only if the effect is acceptable.

(Modification 3)
As described above, in this halftone type phase shift mask PM, it is necessary to dispose exposure light by disposing a minute hole shading band by minute holes in a specific region in the scribe region. Here, the part (area | region) which must arrange | position a micro hole light-shielding zone is demonstrated collectively.

  As described above, when the exposure process (shot) is performed using the halftone phase shift mask having the concavo-convex scribe structure, the corner of the shot is quadruple exposure (see FIGS. 20 to 27). For this reason, as shown in FIG. 37, in the halftone phase shift mask, the minute hole shading band FHSS is always arranged at the corner portion of the scribe region except for the corner portion where the mark arrangement region MR7 is arranged. There is a need.

  Further, as shown in FIG. 38, the minute hole shading zone FHSS has a range (ΔS) of 1 μm or more, preferably 2 μm or more from the corner portion of the scribe region SR toward the direction in which the scribe region SR extends. The exposure light can be effectively shielded by arranging the minute hole shading zone as far as possible.

  Further, as described above, it is necessary to dispose the minute hole light-shielding band in the portion of the scribe region located on the outermost periphery facing the mark arrangement region. The minute hole shading bands FHS1 and FHS2 are arranged in the portion of the scribe region SR facing the mark arrangement regions MR1 and MR2, and the minute hole light shielding is arranged in the portion of the scribe region SR facing the mark arrangement regions MR3 and MR4. Bands FHS3 and FHS4 are arranged.

  On the other hand, the minute hole shading bands FHS5 and FHS6 are arranged in the portion of the scribe region SR facing the mark arrangement regions MR5 and MR6, and the minute portion of the scribe region SR facing the mark arrangement regions MR8 and MR9 is arranged in the minute region. Hall shading bands FHS8 and FHS9 are arranged.

  In this halftone phase shift mask, there are minute holes at and near the boundary between these minute hole light shielding bands FHSS, FHS1 to FHS9 and the minute hole light shielding band FHS arranged in the non-exposure light shielding band arrangement area PSR. They are arranged continuously without any pitch mismatch.

  Further, for example, in the scribe region SR, a minute hole light-shielding band disposed in the scribe region facing the mark placement region and a minute hole disposed in the corner of the scribe region in relation to the position of the mark placement region. When the light shielding is adjacent, the minute holes are continuously arranged at the boundary and in the vicinity thereof without any pitch mismatch.

Embodiment 2
Here, an example of a method for manufacturing a semiconductor device to which the above-described halftone phase shift mask is applied will be described. First, the basic process will be described with reference to a flowchart.

  As shown in FIG. 39, first, in step F1, a predetermined film to be processed is formed on the surface of the semiconductor substrate. Next, in step F2, the halftone phase shift mask described in the first embodiment is prepared. In this half-tone type phase shift mask, a minute hole shading band in which minute holes are continuously arranged with a constant pitch and no pitch mismatch is arranged in a predetermined region in the outside exposure region shielding band arrangement region and the scribe region. Yes.

  Next, in step F3, the photoresist applied to the film to be processed is subjected to an exposure process using the halftone phase shift mask. Next, in Step F4, a photoresist pattern is formed by performing development processing on the photoresist. Next, in step F5, the film to be processed is patterned by etching the film to be processed using the photoresist pattern as a mask.

  Next, as an example of a more specific method for manufacturing a semiconductor device, a method for manufacturing a semiconductor device having a MOS (Metal Oxide Semiconductor) transistor will be described. Here, a case where the above-described halftone phase shift mask is applied to formation of a contact hole will be described as an example.

  As shown in FIG. 40, the insulating film ZF is formed by performing a thermal oxidation process on the surface of the semiconductor substrate SUB. Next, for example, a conductive film CF1 including a polysilicon film and its metal silicide film is formed so as to cover the insulating film ZF.

  Next, a photolithography process for patterning the gate electrode is performed. As shown in FIG. 41, an organic antireflection film (BARC: Bottom Anti-Reflective Coating) AC is formed so as to cover the surface of the conductive film CF1. A photoresist PR1 is applied and formed so as to cover the organic antireflection film AC. Next, by performing an exposure process using an i-line exposure apparatus, the pattern of the gate electrode (wiring) formed on the photomask (not shown) is transferred (photoengraving) to the photoresist PR1.

  Next, a baking process is performed, and then, for example, a development process using an alkali developer of tetramethylammonium hydroxide (concentration: 2.38 wt%) is performed to pattern the gate electrode as shown in FIG. The photoresist pattern PR1P is formed. Next, using the photoresist pattern PR1P as a mask, the organic antireflection film AC and the conductive film CF1 are dry-etched to form the gate electrode GE as shown in FIG. Thereafter, photoresist pattern PR1P is removed.

  Next, an n-type low concentration impurity region LR (see FIG. 44) is formed by implanting an n-type impurity with a relatively low dose amount using the gate electrode GE as a mask. Next, an insulating film (not shown) is formed so as to cover the gate electrode GE. Next, by performing anisotropic etching on the insulating film, a sidewall insulating film SWZ is formed on the side wall of the gate electrode GE as shown in FIG.

  Next, an n-type high concentration impurity region HR is formed by implanting an n-type impurity with a relatively high dose amount using the gate electrode GE and the sidewall insulating film SWZ as a mask. Thus, an n-channel MOS transistor including the gate electrode GE, the n-type low concentration impurity region LR, and the n-type high concentration impurity region HR is formed. Next, for example, an interlayer insulating film SZ (see FIG. 45) such as a silicon oxide film is formed so as to cover the gate electrode GE and the like.

  Next, a photolithography process for forming a contact hole is performed. As shown in FIG. 45, an organic antireflection film AC is formed so as to cover the interlayer insulating film SZ. A photoresist PR2 is applied and formed so as to cover the organic antireflection film AC. Next, as shown in FIG. 46, an exposure process is performed using the halftone phase shift mask PM described in the first embodiment. In the halftone phase shift mask PM, a minute hole shading band made of minute holes is arranged in the outside exposure region shielding band arrangement region PSR and the scribe region SR.

  The halftone phase shift mask PM set in the i-line exposure apparatus is irradiated with exposure light through the aperture AP, and a contact hole pattern (not shown) formed in the halftone phase shift mask is an optical system. The image is reduced by LEZ and sequentially transferred to the photoresist PR2. Next, a baking process is performed, followed by a development process using an alkali developer, thereby forming a resist pattern PR2P for forming contact holes as shown in FIG.

  Next, as shown in FIG. 48, by performing anisotropic etching on the organic antireflection film AC and the interlayer insulating film SZ using the resist pattern PR2P as a mask, the contact hole CH exposing the n-type high concentration impurity region HR is formed. It is formed. Thereafter, the resist pattern PR2P and the organic antireflection film AC are removed.

  Next, as shown in FIG. 49, a predetermined conductive film CF2 including a barrier metal is formed on the interlayer insulating film SZ so as to fill the contact hole CH. Next, an organic antireflection film and a resist pattern (both not shown) are formed by performing a photoengraving process for patterning the wiring. Next, by performing anisotropic etching on the conductive film CF2 using the resist pattern as a mask, a wiring M (see FIG. 50) electrically connected to the n-type high concentration impurity region HR is formed.

  Thereafter, by removing the organic antireflection film and the resist pattern, as shown in FIG. 50, the main part of the semiconductor device including the n-channel MOS transistor is formed.

  In the case of manufacturing a semiconductor device having a multilayer wiring structure, an interlayer insulating film is formed so as to cover the wiring M, and then a through hole is formed in the interlayer insulating film, and the through hole is formed in the through hole. A conductive film such as copper (Cu) may be embedded. Thereby, a semiconductor device having a multilayer wiring structure can be manufactured. Further, by forming a p-channel MOS transistor in addition to the n-channel MOS transistor, a CMOS (Complementary Metal Oxide Semiconductor) type semiconductor device can be manufactured.

  According to the semiconductor device manufacturing method described above, in the halftone phase shift mask used for forming contact holes, fine holes are pitched at a constant pitch in the non-exposure light shielding band arrangement region PSR and the scribe region SR. A minute hole shading band formed continuously without any mismatch is arranged. As a result, as described in the first embodiment, unintended photoresist exposure at the corner portion of the shot can be suppressed, and a desired photoresist pattern can be reliably formed. As a result, a contact hole with high dimensional accuracy can be formed.

  In the halftone phase shift mask described above, the scribe region has an uneven scribe structure. Thereby, the number of semiconductor chips (device chips) obtained from one wafer (semiconductor substrate) can be increased. Further, a single-layer halftone phase shift mask is used as the halftone phase shift mask. As a result, the manufacturing cost of the semiconductor device can be suppressed.

  In the above-described method for manufacturing a semiconductor device, the case where the halftone phase shift mask described in Embodiment 1 is applied when a contact hole is formed has been described. The process of applying the halftone phase shift mask is not limited to the process of forming a contact hole, but can be applied to the patterning of various processed films including the patterning of gate electrodes and wiring. Can do.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  PM half-tone phase shift mask, QG quartz glass plate, DR device chip area, SR scribe area, MR mark arrangement area, PSR non-exposure light-shielding band arrangement area, FHS minute hole shading band, FH minute hole, HT halftone Film, PMD halftone phase shift mask design data, DRD device chip area design data, SRD scribe area design data, MRD mark design data, PSRD design area layout area outside the exposure area, FHPD micro hole Shading pattern design data, FHSD micro hole shading band design data, S micro hole size, L distance, D distance, PMM pitch mismatch, TA, TB, TC, TD transmittance, SUB semiconductor substrate, ZF insulating film , CF1 conductive film, AC organic Anti-reflection film, PR1 photoresist, PR1P photoresist pattern, GE gate electrode, SWZ sidewall insulating film, LR n-type low concentration impurity region, HR n-type high concentration impurity region, SZ interlayer insulating film, PR2 photoresist, AP aperture PR2P photoresist pattern, CH contact hole, CF2 conductive film, M wiring.

Claims (12)

A first light shielding region arranged on the surface of a predetermined substrate for shielding exposure light;
A second light shielding region disposed on the surface of the substrate so as to be adjacent to the first light shielding region and shielding the exposure light;
In the first light-shielding region and the second light-shielding region, minute holes in which minute holes below the resolution limit with respect to the exposure light are continuously formed in the halftone film at a constant pitch and without mismatching of the pitch. Halftone phase shift mask with hole shading band. A region where a device chip is formed;
A scribe region arranged to surround a region where the device is formed;
Including a non-exposure area light-shielding band arrangement area arranged so as to surround the scribe area in a mode adjacent to the scribe area,
The first light-shielding region is disposed in the outside-exposure region light-shielding band placement region;
The halftone phase shift mask according to claim 1, wherein the second light shielding region is disposed in the scribe region. Including a plurality of regions where the device chip is formed;
The scribe area is
The outermost peripheral scribe region disposed between the outermost region where the device chip is formed and the light-exposed region outside light-shielding band disposed region;
Including an internal scribe region disposed between a region where one device chip is formed and a region where another device chip is formed among regions where the plurality of device chips are formed;
3. The halftone phase shift mask according to claim 2, wherein the second light shielding region is disposed in both the outermost peripheral scribe region and the inner scribe region. Including a plurality of regions where the device chip is formed;
The scribe area is
The outermost peripheral scribe region disposed between the outermost region where the device chip is formed and the light-exposed region outside light-shielding band disposed region;
Including an internal scribe region disposed between a region where one device chip is formed and a region where another device chip is formed among regions where the plurality of device chips are formed;
The halftone phase shift mask according to claim 2, wherein the second light shielding region is not disposed in the inner scribe region but is disposed in the outermost peripheral scribe region. A scribe region arranged so as to surround a region where a device chip is formed;
Including an exposure area outside light shielding band arrangement area arranged so as to surround the scribe area in a manner in contact with the scribe area,
The first light shielding region is disposed in a first region of the scribe region;
2. The halftone phase shift mask according to claim 1, wherein the second light shielding region is disposed in a second region adjacent to the first region in the scribe region. The scribe region includes a first scribe region and a second scribe region facing each other,
In the first scribe region, a pattern formation region in which a predetermined pattern is formed is disposed,
6. The halftone phase shift mask according to claim 5, wherein either one of the first region and the second region is disposed in a portion of the second scribe region facing the pattern formation region. Preparing device chip area design data, scribe area design data, design data for areas outside the exposure area shading zone, and
Arranging the scribe area so as to surround the device chip area, and creating photomask pattern data in a manner of arranging the outside-exposed-area light-shielding band arrangement area so as to surround the scribe area;
Using the out-of-exposure light-shielding band arrangement region and the predetermined region in the scribe region as one region, minute holes below the resolution limit with respect to the predetermined exposure light are continuously formed at a constant pitch without mismatching of the pitch. Creating design data for a small hole shading zone that is placed periodically
Manufacturing a halftone phase shift mask, comprising: performing electronic drawing on a halftone film formed on a surface of a predetermined substrate based on the pattern data of the photomask and design data of the minute hole shading band Method.   In the step of creating the design data of the minute hole shading band, the minute hole shading band is the fixed hole starting with the minute hole shading pattern including the minute hole as a unit pattern and the inner corner in the non-exposure area shading band arrangement region as a starting point. The method of manufacturing a halftone phase shift mask according to claim 7, further comprising a step of sequentially arranging along the X-axis direction and the Y-axis direction orthogonal to the X-axis direction at a pitch of The step of preparing the design data of the scribe area includes:
Design data of the first scribe area and the second scribe area facing each other;
Preparing design data of a pattern formation region in which a predetermined pattern arranged in the first scribe region is formed,
The step of creating the design data of the minute hole shading band includes the step of creating design data of the minute hole shading band by the minute hole in a portion facing the pattern formation region in the second scribe region. 8. A method for producing a halftone phase shift mask according to claim 7. A method for manufacturing a semiconductor device to which the halftone phase shift mask according to claim 1 is applied,
Forming a predetermined film to be processed on the main surface of the semiconductor substrate;
Applying and forming a photoresist so as to cover the film to be processed;
A step of applying an exposure process to the photoresist by applying the photomask;
A step of forming a photoresist pattern by performing a development process on the photoresist subjected to the exposure process,
Processing the film to be processed using the photoresist pattern as a mask;
A method of manufacturing a semiconductor device, comprising: removing the photoresist pattern. In the step of forming the photoresist pattern, an opening pattern is formed,
The method of manufacturing a semiconductor device according to claim 10, wherein an opening that penetrates the film to be processed is formed in the step of processing the film to be processed.   The method of manufacturing a semiconductor device according to claim 11, wherein the film to be processed is an insulating film.