JP2013133490A - Cylindrical sputtering target and method for producing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve such a problem that in a long cylindrical sputtering target constructed by mounting a plurality of ring-shaped targets on a cylindrical substrate, the targets have to be subjected to bonding to the cylindrical substrate one by one, and injection of a bonding material and formation of a gap have to be performed each time the target is mounted, thereby requiring numerous production processes.SOLUTION: The plurality of ring-shaped targets with a thickness of 10 mm or less are continuously mounted on the cylindrical substrate, and are integrated by fastening both ends using screws, thereby obtaining the cylindrical sputtering target.

Description

  The present invention relates to a long cylindrical sputtering target used for forming a thin film and a method for manufacturing the same.

  2. Description of the Related Art In recent years, a cylindrical sputtering target having a high use efficiency and a high film formation rate as compared with a flat plate sputtering target has attracted attention.

As a method of manufacturing the cylindrical sputtering target, a manufacturing method is adopted in which a plurality of ring-shaped targets are fitted to a cylindrical base material and fixed with a bonding material (for example, see Patent Document 1 and Patent Document 2). reference).
Japanese Patent Application Laid-Open No. 2010-100100 JP 7-228967 A

  However, according to the above technique, if there is a step due to the difference in the outer diameter between adjacent targets of a plurality of targets fitted on a cylindrical base material, there is a risk that spatter will concentrate on that part and damage the target. It is necessary to join and fix the target to the cylindrical base material so that the outer peripheral surfaces match using a dedicated jig or a bonding material such as In or In alloy (bonding material or solder), and the manufacturing process is complicated Met.

  Further, it is necessary to provide a gap between the targets in order to prevent the ring-shaped targets from being thermally expanded and cracked by sputtering. For this purpose, the targets must be bonded to the cylindrical base material one by one. In each case, there is a problem that a large number of manufacturing steps are required to inject the bonding material and insert the target while forming a gap.

  Therefore, the present invention improves accuracy by producing a ring-shaped target having a thickness of 10 mm or less, and after the plurality of the ring-shaped targets are continuously fitted on the outer periphery of the cylindrical base material, it is continued from both sides with screws. The ring-shaped target was bonded and fixed by pressing and fixing.

  That is, it is a long cylindrical sputtering target in which a plurality of ring-shaped targets are continuous without gaps and are fixed to a cylindrical base material with screws without using a bonding material.

  FIG. 1 is a cross-sectional view showing a configuration example of a long cylindrical sputtering target of the present invention. In the figure, a ring-shaped target is manufactured by a melting method or the like, and the ring-shaped target is threaded on at least both sides. A plurality of pieces are continuously attached to the base material.

  Further, the metal screw 3 was screwed in from both sides of the cylindrical base material, and the continuous ring-shaped target was tightened to be continuously and integrally fixed.

  Since the ring-shaped target is cracked by a material having poor thermal conductivity, materials such as Ag, Ag alloy, Au, and Au alloy having good thermal conductivity are used.

  Furthermore, regardless of the dimensions of the outer diameter and the inner diameter, the thickness is set to 10 mm or less, and the error of the outer diameter, the inner diameter and the thickness is set to an accuracy of 0.05 mm or less.

  Note that the reason why the thickness is 10 mm or less in the above is that the film formation by sputtering is stabilized because the crystal grains can be refined by heat treatment. The reason why the error is set to 0.05 mm or less is that a step that concentrates sputtering is not formed by a cylindrical sputtering target configured by assembling a ring-shaped target.

  The cylindrical substrate 2 and the metal screw 3 may be any metal as long as it has appropriate thermal conductivity, electrical conductivity, and strength. It is made of a non-ferrous alloy containing Cu, Ti, Al, Mo, Au, Ag, Mg, or the like, or made of stainless steel (SUS).

  According to the present invention described above, the manufacturing process for joining and fixing the ring-shaped target to the cylindrical base material is simplified and can be easily manufactured.

  Furthermore, since the accuracy of each ring-shaped target is good, there are few steps on the outer peripheral surface of the connecting portion of the continuous ring-shaped target, and the long cylindrical sputtering target is suppressed in concentration of sputtering.

  In addition, since no bonding material such as In is used for assembling the ring-shaped target, when the cylindrical base material and the ring-shaped target are separated, the bonding material does not adhere to the target and the target material can be easily refined. .

  Furthermore, it is generally said that the film formation by sputtering is stable if the crystal grain size of the metal target is small, but since the thickness of the ring-shaped target of the present invention is 10 mm or less, the cast structure after melting is changed to a fiber structure. In addition, sufficient plastic working can be applied, and further, the crystal grains can be refined by heat treatment, so that the film formation by sputtering is stable.

The partially broken side view which shows the structure of this invention Partially broken side view showing the first and second embodiments End view showing the first and second embodiments Partially broken side view showing the third embodiment Partially broken side view showing the fourth embodiment

  Examples of the present invention will be described.

  Using an Au having a purity of 99.99% by mass or more, an outer diameter of 130 mm, an inner diameter of 110 mm, a thickness of 10 mm, an error of the outer diameter, inner diameter and thickness being 0.05 mm or less, the ring-shaped target 1 is dissolved by a melting method. Individually produced.

  Moreover, the cylindrical base material 2 made of Cu having an outer diameter of 110 mm, an inner diameter of 100 mm, and a height of 400 mm was prepared, and threaded on both sides thereof.

  The ring-shaped target is continuously fitted to the obtained Cu-shaped cylindrical base material, and the outer diameter of Cu is formed from the side end of the continuous ring-shaped target 1 so that the outer peripheral surfaces of the individual ring-shaped targets coincide with each other. Tightened with a 120 mm screw 3, the Au cylindrical sputtering target shown in FIGS. 2 and 3 was produced.

  When the Au cylindrical sputtering target shown in FIG. 3 was inserted into a high-frequency magnetron apparatus and sputtering was performed under the conditions of Ar partial pressure of 0.5 Pa and output of 10 kW, no crack was generated in the Au cylindrical sputtering target. .

  Using Ag with a purity of 99.99% by mass or more and using the other conditions in the same manner as in Example 1, an Ag cylindrical sputtering target as shown in FIG. 3 was produced.

  When this Ag cylindrical sputtering target was sputtered using the high-frequency magnetron device under the same conditions as in Example 1, no cracking occurred in the Ag cylindrical sputtering target.

  Using Ag with a purity of 99.99% by mass or more, a band material having a width of 200 mm, a thickness of 1 mm, and a length of 60000 mm is produced by a melting method, and the outer diameter is 130 mm, an inner diameter of 110 mm, and a thickness of 1 mm by pressing. 100 ring-shaped targets 1 having an inner diameter and thickness error of 0.05 mm or less were produced.

  The produced ring-shaped target is continuously fitted to a cylindrical cylindrical substrate 2 made of Cu having an outer diameter of 110 mm, an inner diameter of 100 mm, and a height of 400 mm, and the ring-shaped target is continuously ring-shaped so that the outer peripheral surfaces of the individual ring-shaped targets coincide. The Ag was sputtered from the side end of the target 1 with a screw 3 made of Cu having an outer diameter of 120 mm to produce an Ag cylindrical sputtering target shown in FIG.

  The Ag cylindrical sputtering target shown in FIG. 4 was inserted into a high-frequency magnetron apparatus, and sputtering was performed under the conditions of an Ar partial pressure of 0.5 Pa and an output of 10 kW. As a result, no crack was generated in the Ag cylindrical sputtering target. .

  Using an Ag having a purity of 99.99% by mass or more, an outer diameter of 130 mm, an inner diameter of 110 mm, a thickness of 10 mm, and an error of the outer diameter, inner diameter and thickness of 0.05 mm or less, the ring-shaped target 1 is dissolved by a melting method. Individually produced.

  Moreover, the cylindrical base material 2 made of Cu having an outer diameter of 110 mm, an inner diameter of 100 mm, and a height of 400 mm was prepared, and threaded on both sides thereof.

  The ring-shaped target 1 is continuously fitted on the obtained Cu cylindrical base material, and the outer diameter of SUS304 is formed from the side end of the continuous ring-shaped target so that the outer peripheral surfaces of the individual ring-shaped targets coincide with each other. A 120 mm disc spring 4 was inserted and tightened from the side end with a screw 3 made of Cu having an outer diameter of 120 mm to produce an Ag cylindrical sputtering target shown in FIG.

  When the Ag cylindrical sputtering target shown in FIG. 5 was inserted into a high-frequency magnetron apparatus and sputtering was performed under the conditions of Ar partial pressure of 0.5 Pa and output of 10 kW, no crack was generated in the Ag cylindrical sputtering target. .

DESCRIPTION OF SYMBOLS 1 Ring-shaped target 2 Cylindrical base material 3 Screw 4 Spring

Claims (4)

In a long cylindrical sputtering target constructed by fitting a plurality of ring-shaped targets to a cylindrical substrate,
A cylindrical sputtering target characterized in that a plurality of ring-shaped targets having a thickness of 10 mm or less are continuously fitted to a cylindrical base material, and both ends thereof are tightened with screws to be assembled together.   The cylindrical sputtering target according to claim 1, wherein an error in the outer diameter, inner diameter, and thickness of the ring-shaped target is 0.05 mm or less.   3. The cylindrical sputtering target according to claim 1 or 2, wherein both ends of a ring-shaped target continuously fitted to the cylindrical base material are tightened with screws via a spring.   A method for producing a cylindrical sputtering target, comprising producing the ring-shaped target according to claim 1, 2 or 3 by press working.

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