JP2013179367A - Wire bonding device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To clean the surface of a wire, used for bonding in a wire bonding device, effectively.SOLUTION: The wire bonding device includes a base 11, a bonding head 13 for moving a capillary 15 in the XYZ direction for the base 11, and a plasma unit 30 for wire cleaning. The plasma unit 30 for wire cleaning includes hollow casings 31a, 31b into which an inert gas is introduced so that the internal pressure is higher than the atmospheric pressure, holes 33a, 33b provided, respectively, in the casings 31a, 31b so that a wire 21 is inserted, and an electrode for plasma provided on the circumference of each hole 33a, 33b on the inside of each casing 31a, 31b. The wire 21 is cleaned by passing it into plasma generated in the casings 31a, 31b in a state where the atmosphere does not enter the casings 31a, 31b.

Description

  The present invention relates to a structure of a wire bonding apparatus having a wire cleaning function.

  A wire bonding apparatus for connecting a semiconductor chip electrode and a substrate electrode with a metal wire is often used. In these wire bonding apparatuses, when the surface of the wire that is the connection line is oxidized, the bondability with the electrode is lowered, and the bonding strength, electrical characteristics, and the like may be deteriorated. For this reason, many wire bonding apparatuses use a gold wire whose surface is not oxidized to connect each electrode.

  However, although the gold wire is excellent in bonding characteristics, there is a problem that the price is high and the electric characteristics are low as compared with copper or the like. For this reason, in recent years, wire bonding apparatuses using copper wires have been proposed. In a wire bonding apparatus using a copper wire, it is necessary to ensure a good connection state by bonding the copper surface to the electrode in a clean state. Therefore, before bonding, plasma is applied to the surface of the copper wire to clean it, and after removing organic impurities adhering to the wire surface, reducing or blowing rare gas is blown onto the wire to suppress the oxidation of the wire surface. However, a method for supplying a wire having a clean surface to a bonding tool has been proposed (see, for example, Patent Document 1).

Special table 2008-535251 gazette

  By the way, when plasma is generated in an atmospheric pressure state, a method of applying a high-frequency AC voltage between the electrodes is often used, but in this case, the temperature of the generated plasma becomes high. In some cases, the surface of the wire is oxidized while the wire irradiated with plasma becomes high temperature and the wire is cooled. On the other hand, when plasma is generated in an atmosphere reduced to atmospheric pressure or lower, it is possible to generate low-temperature plasma at a low voltage. Therefore, Patent Document 1 proposes a method of reducing the heating of the wire by plasma irradiation by generating a low-temperature plasma in a chamber whose pressure is reduced to atmospheric pressure or lower and irradiating the plasma with the plasma. .

  However, in the chamber reduced in pressure below atmospheric pressure as described in Patent Document 1, a small amount of air remains inside, and this small amount of remaining air contains oxygen. For this reason, the plasma generated in the chamber depressurized below the atmospheric pressure described in Patent Document 1 becomes oxidative plasma, which removes organic impurities adhering to the wire surface and simultaneously oxidizes the wire surface. there were. For this reason, in the prior art described in Patent Document 1, it is necessary to attach a compensator that blows a reducing gas or a rare gas onto the wire surface after cleaning the wire with plasma, and to suppress oxidation of the wire surface. It becomes.

  However, when reducing gas or rare gas is sprayed on the wire oxidized by oxidizing plasma irradiation, the wire can be cooled, but the oxidized state of the oxidized wire surface can be made unoxidized or It is difficult to remove the formed oxide film. Finally, bonding is performed with a wire whose surface is oxidized, and the bondability between the wire and the electrode may be insufficient. This problem becomes prominent in copper wires whose surfaces are easily oxidized.

  An object of the present invention is to effectively clean the surface of a wire used for bonding in a wire bonding apparatus.

  The wire bonding apparatus of the present invention includes a base portion, a bonding head that moves the bonding tool in the XYZ directions with respect to the base portion, a wire spool that is attached to the base portion and supplies a wire to the bonding tool, a wire spool, and a bonding A wire cleaning plasma unit disposed between the tool and the wire cleaning plasma unit. The wire cleaning plasma unit includes a hollow casing into which an inert gas is introduced so that the internal pressure is higher than the atmospheric pressure, and the wire is inserted. Each hole provided in each facing casing wall, and each electrode provided facing the inner surface of each casing wall at the periphery of each hole, and energized between each electrode, Wash the wire through the wire in the plasma generated without the air entering the space between the electrodes. Ukoto, characterized by.

    In the wire bonding apparatus of the present invention, the wire cleaning plasma unit is preferably attached to the bonding head, and is attached to the base portion and guides the wire supplied from the wire spool in the linear direction. The wire cleaning plasma unit is preferably attached to a base portion between each wire guide, and the casing communicates with each hole, and the wire is It is also preferable to provide each pipe to be inserted on the outer surface of each wall.

  The wire bonding apparatus of the present invention includes a base part, a bonding head that moves the bonding tool in the XYZ directions with respect to the base part, a wire spool that is attached to the base part and supplies a wire to the bonding tool, and is attached to the base part A wire bonding apparatus comprising: at least two wire guides for guiding a wire supplied from a wire spool in a linear direction, wherein the cleaning plasma jet is opened to the air between the wire guides in an open state to the air. And a cleaning plasma unit to be sprayed. Further, in the wire bonding apparatus of the present invention, the reducing plasma unit is disposed on the bonding tool side of the cleaning plasma unit, and the reducing plasma is sprayed to the wire on which the cleaning plasma is sprayed between the wire guides in an open state between the wire guides. It is also suitable as providing.

  A wire bonding apparatus according to the present invention includes a base portion, a bonding head that moves in a XYZ direction with respect to the bonding tool base portion, and a wire spool that is attached to the base portion and supplies a wire to the bonding tool. And a cleaning plasma unit that is attached to the bonding head and blows a cleaning plasma jet toward the wire in an air-released state. Further, the wire bonding apparatus of the present invention includes a reduction plasma unit that is attached to the bonding head on the bonding tool side of the cleaning plasma unit and that blows the reduction plasma to the wire on which the cleaning plasma is sprayed in an open state. Is also suitable.

  The present invention has an effect that a wire surface used for bonding in a wire bonding apparatus can be effectively cleaned.

It is explanatory drawing which shows the structure of the wire bonding apparatus in embodiment of this invention. It is a perspective view which shows the external appearance of the plasma unit for wire washing | cleaning of the wire bonding apparatus in embodiment of this invention. It is a perspective view which shows the internal structure of the plasma unit for wire cleaning of the wire bonding apparatus in embodiment of this invention. It is a perspective sectional view showing an internal structure of a wire cleaning plasma unit of a wire bonding apparatus in an embodiment of the present invention. It is explanatory drawing which shows operation | movement of the plasma unit for wire washing | cleaning of the wire bonding apparatus in embodiment of this invention. It is a perspective view which shows the external appearance of the other wire washing plasma unit in the wire bonding apparatus in embodiment of this invention. It is explanatory drawing which shows the operation | movement of the other wire cleaning plasma unit in the wire bonding apparatus in embodiment of this invention. It is explanatory drawing which shows the structure of the wire bonding apparatus in other embodiment of this invention. It is explanatory drawing which shows the structure of the wire bonding apparatus in other embodiment of this invention. It is explanatory drawing which shows the structure of the plasma unit of the wire bonding apparatus in other embodiment of this invention. It is explanatory drawing which shows the structure of the wire bonding apparatus in other embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. As shown in FIG. 1, the wire bonding apparatus 100 of the present embodiment includes a base 11 that is a base portion, an XY table 12 that is mounted on the base 11 and whose upper surface moves in the XY direction, and an XY table 12 A bonding head 13 attached on the upper surface and a bonding arm 14 for moving a capillary 15 as a bonding tool attached to the tip by a Z-direction drive mechanism provided inside the bonding head 13 in the Z direction are provided. . That is, the bonding head 13 can move the capillary 15 in the XYZ directions by moving the bonding arm 14 in the Z direction by the XY table 12 and the Z direction driving mechanism attached inside. A bonding stage 16 is attached to the base 11 of the wire bonding apparatus 100 to suck and fix a substrate 47 on which a semiconductor die 46 for wire bonding is attached. In FIG. 1, the vertical direction of the wire bonding apparatus 100 is the Z direction, the direction from the bonding stage 16 toward the bonding head 13 is the Y direction, and the direction perpendicular to the YZ plane is the X direction.

  A wire spool 20 that supplies a wire 21 to the capillary 15 and an air guide 19 that converts the feeding direction of the wire 21 fed from the wire spool 20 to the Z direction are attached to the upper frame 11a fixed to the base 11. ing. Further, two wire guides 17 and 18 are attached to the upper frame 11a to guide the direction of the wire 21 whose feed direction has been changed in the Z direction by the air guide 19 in a straight line in the Z direction. A wire cleaning plasma unit 30 for cleaning the surface of the wire 21 is attached between the two wire guides 17 and 18. As shown in FIG. 1, the wire 21 is inserted into the wire cleaning plasma unit 30 so as to pass through holes 33 a and 33 b provided in the wire cleaning plasma unit 30. The wire cleaning plasma unit 30 is attached to an upper frame 11 a fixed to the base 11. Connected to the wire cleaning plasma unit 30 are a gas inlet tube 34 for generating cleaning plasma and a DC pulse power supply device 45 for supplying a DC pulse power supply for generating plasma.

  The wire 21 fed out from the wire spool 20 hardly moves in the XY direction between the two wire guides 17 and 18, but is bonded between the wire guide 18 disposed on the lower side and the capillary 15. According to the movement of the head 13 and the capillary 15, it moves in the XY directions as shown by the alternate long and short dash line in FIG. The wire 21 is inserted into the capillary 15 and bonded onto each electrode of the semiconductor die 46 or the substrate 47 by the tip of the capillary 15.

  As shown in FIGS. 2 and 3, the wire cleaning plasma unit 30 is a combination of a ceramic upper half casing 31a and a lower half casing 31b. The upper and lower walls 31c, 31d of the casings 31a, 31b The holes 33a and 33b through which the wire 21 passes are respectively provided. Each casing 31a, 31b is provided with electrodes 35a, 35b to which an electric wire from the DC pulse power supply device 45 is connected. As shown in FIG. 3, recesses 36 a and 36 b are formed inside the casings 31 a and 31 b to form the hollow portions 36 c shown in FIG. 4 when the casings 31 a and 31 b are combined. Boss 37a, 37b in which annular plasma generating electrodes 41a, 41b are embedded protrudes around 33b. The tip surfaces 39a and 39b of the bosses 37a and 37b are lower than the mating surfaces of the casings 31a and 31b, and when the casings 31a and 31b are put together, the tip surfaces 39a and 39b of the bosses 37a and 37b are arranged. A space is formed between them.

  A recess 39 having a semicircular cross section is provided at the end of each casing 31a, 31b opposite to the side where the holes 33a, 33b are provided. The recess 39 having a semicircular cross section forms a cylindrical hole to which the gas inlet pipe 34 is attached when the casings 31a and 31b are combined. Further, in the recesses 36a and 36b in the vicinity of the recess 39 to which the gas inlet pipe 34 is connected, projections 38a and 38b for allowing the gas flowing from the gas inlet pipe 34 to flow evenly into the hollow part 36c shown in FIG. Has been.

  With reference to FIG. 4, the structure of the state which combined the upper half casing 31a and the lower half casing 31b comprised as mentioned above is demonstrated. When the upper half casing 31a and the lower half casing 31b are overlapped so that the concave portions 36a and 36b face each other, the mating surfaces around the casings 31a and 31b are in close contact with each other, and a hollow portion 36c is formed inside. Moreover, since each front end surface 39a, 39b of each boss | hub 37a, 37b is lower than the mating surface of each casing 31a, 31b, when each casing 31a, 31b is combined, each front end surface A space 50 is formed between 39a and 39b. The holes 33a and 33b provided in the walls of the casings 31a and 31b are arranged at positions facing each other when the casings 31a and 31b are combined, and the bosses 37a and 37b are concentric with the holes 33a and 33b. Since it is formed, the front end surfaces 39a and 39b of the bosses 37a and 37b are also in positions facing each other.

  Since the heights of the projections 38a and 38b are the same as the height of the mating surfaces of the casings 31a and 31b, when the casings 31a and 31b are mated, their tip surfaces are in close contact with each other, and the arrows in FIG. As shown, the gas flowing in from the gas inlet pipe 34 is caused to flow into the hollow portion 36c from both sides thereof, and the gas flow in the hollow portion 36c is made uniform.

  As shown in FIG. 4, parts of the electrodes 35a and 35b embedded in the walls 31c and 31d of the casings 31a and 31b are exposed from the surfaces of the walls 31c and 31d of the casings 31a and 31b. The electrodes 35a, 35b and the plasma generating electrodes 41a, 41b embedded in the bosses 37a, 37b are connected by connection lines 42a, 42b embedded in the walls 31c, 31d. .

  The operation of the wire cleaning plasma unit 30 configured as described above will be described with reference to FIG. As shown in FIG. 1, the wire cleaning plasma unit 30 is fixed to the upper frame 11a, and the wire 21 extends through the holes 33a and 33b from the top to the bottom. A gas for plasma generation flows from the gas inlet pipe 34 shown in FIG. 1 into the hollow portion 36c as indicated by an arrow a shown in FIG. The gas is, for example, an inert gas such as nitrogen or argon. The plasma generating electrodes 41a and 41b are connected to the DC pulse power supply device 45 by connection lines 42a and 42b. First, before energizing the plasma generating electrodes 41a and 41b, the gas flows from the hollow portion 36c to the periphery of the bosses 37a and 37b, and the inner holes from the outer peripheral sides of the front end surfaces 39a and 39b of the bosses 37a and 37b. It flows horizontally toward 33a and 33b, and flows out in the vertical direction through holes 33a and 33b. For this reason, the pressure of the hollow portion 36c is slightly higher than the atmospheric pressure, and air does not enter the hollow portion 36c from the holes 33a and 33b, and the hollow portion 36c of the wire cleaning plasma unit 30 is not An inert gas atmosphere filled with active gas is maintained.

  When the DC pulse power supplied from the DC pulse power supply device 45 is energized to the plasma generating electrodes 41a and 41b, plasma is generated in the space 50 between the tip surfaces 39a and 39b of the bosses 37a and 37b. The plasma is generated between the annular plasma generating electrodes 41a and 41b, and then flows in the center of the holes 33a and 33b along the flow of the inert gas, and flows upward and downward in the holes 33a and 33b. Go. The plasma generated during this time hits the surface of the wire 21 extending vertically through the holes 33a and 33b in the space 50 and the holes 33a and 33b, and removes foreign matters such as organic impurities on the surface. The lifetime of the plasma generated between the plasma generating electrodes 41a and 41b is very short, and after the generation, it disappears before flowing out from the holes 33a and 33b and returns to the original inert gas. And the inert gas which returned from the plasma is discharged | emitted outside from each hole 33a, 33b, as shown by the arrow b shown in FIG.

  As described above, the wire cleaning plasma unit 30 of the present embodiment generates plasma in the space 50 in each of the casings 31a and 31b without entering the atmosphere, so that the generated plasma does not become oxidation plasma. For this reason, cleaning can be performed without oxidizing the surface of the wire 21. Therefore, it is necessary to attach a compensator or the like that suppresses oxidation of the wire surface by spraying reducing or noble gas on the wire after removing organic impurities adhering to the wire surface with plasma as described in Patent Document 1. The surface of the wire 21 can be effectively cleaned with a simple apparatus.

  In the embodiment described above, the wire cleaning plasma unit 30 is disposed between the two wire guides 17 and 18, and the wire 21 between the wire guides 17 and 18 passes through the holes 33a and 33b. However, as long as it is attached to the upper frame 11 a fixed to the base 11, it may not be arranged between the wire guides 17 and 18.

  Next, another embodiment of the present invention will be described with reference to FIGS. Parts similar to those of the embodiment described with reference to FIGS. 1 to 5 are denoted by the same reference numerals, and description thereof is omitted. As shown in FIG. 6, in this embodiment, the pipes 32 a and 32 b through which the wires 21 are inserted communicate with the holes 33 a and 33 b provided in the upper half casing 31 a and the lower half casing 31 b. It is attached to the outer surface of each wall 31c, 31d of 31b.

  For example, depending on the state of contamination of the wire 21, it may be necessary to clean the wire 21 with stronger plasma. In this case, the temperature of the generated plasma becomes high, and in the wire cleaning plasma unit 30 of the embodiment described with reference to FIGS. 1 to 5, the inert gas flowing out from the holes 33a and 33b The washed wire 21 that is high in temperature and sent downward from the lower hole 33b is exposed to the atmosphere outside the hole 33b while the surface temperature is high. In this case, depending on the surface temperature of the wire 21, the surface may be oxidized by oxygen contained in the atmosphere, and bonding quality may be deteriorated.

  Therefore, in the present embodiment, as shown in FIG. 7, by attaching the pipes 32a and 32b, the plasma generated between the plasma generating electrodes 41a and 41b is originally deactivated in the holes 33a and 33b. After returning to the gas, it is cooled from the outer surface of each pipe 32a, 32b while flowing through each pipe 32a, 32b. For this reason, the temperature of the wire 21 inserted into each pipe 32a, 32b is also lowered to a temperature at which the surface of the wire 21 is not oxidized when the wire 21 goes out from the outlet of each pipe 32a, 32b. Yes. As a result, even when the surface of the wire 21 is cleaned using high temperature plasma according to the state of contamination of the wire 21, the surface of the cleaned wire 21 can be sent to the capillary 15 without being oxidized. Bonding quality can be improved.

  In each of the embodiments described above, the wire cleaning plasma unit 30 has been described as being attached to the upper frame 11a fixed to the base 11. However, as shown in FIG. Also good. In this case, since the wire 21 can be cleaned at a position closer to the capillary 15, the wire 21 can be cleaned more effectively. Further, when the wire cleaning plasma unit 30 is attached to the bonding head 13 in this way, the size of each of the holes 33a and 33b is such that the wire 21 accompanying the movement of the bonding head 13 in the XY direction as shown in FIG. It is good also as a hole of the magnitude | size which can absorb a vibration.

  Another embodiment of the present invention will be described with reference to FIGS. The same parts as those described with reference to FIGS. 1 to 8 are denoted by the same reference numerals, and description thereof is omitted. As shown in FIG. 9, in this embodiment, instead of the wire cleaning plasma unit 30 of the embodiment described with reference to FIG. 1, a cleaning plasma jet is directed toward the wire 21 between the wire guides 17 and 18. A cleaning plasma unit 60 to be sprayed, and a reduction plasma unit 70 disposed on the capillary side of the cleaning plasma unit 60 and further spraying a reducing plasma between the wire guides 17 and 18 to the wire 21 to which the cleaning plasma has been sprayed are provided. It is a thing. As shown in FIG. 9, the cleaning plasma unit 60 is supplied with an inert gas argon as a cleaning plasma gas, and the reducing plasma unit 70 is supplied with a mixed gas of argon and hydrogen as a reducing plasma gas.

  As shown in FIG. 10, each of the plasma units 60 and 70 has an argon gas supplied from an argon gas tank 56 for a cleaning plasma gas or a mixed gas supplied from a mixed gas tank 57 of argon and hydrogen for a reducing plasma gas. Chambers 61 and 71 having gas inlets 63 and 73 introduced therein, cylindrical plasma nozzles 62 and 72 extending from the chambers 61 and 71, and center electrodes 66 and 76 disposed at the centers of the plasma nozzles 62 and 72. And cylindrical external electrodes 65, 75 disposed outside the plasma nozzles 62, 72, and casings 64, 74 covering the outside of the external electrodes 65, 75. The center electrodes 66 and 76 are grounded by ground lines 67 and 77, and the external electrodes 65 and 75 are connected to the high frequency power supply 55 through coils 68 and 78 and matching devices 69 and 79.

  Argon gas or mixed gas introduced into the chambers 61 and 71 from the gas inlets 63 and 73 becomes cleaning plasma or reducing plasma by high-frequency power applied between the center electrodes 66 and 76 and the external electrodes 65 and 75. The plasma nozzles 62 and 72 are ejected from the tip.

  As shown in FIG. 9, the cleaning plasma unit 60 ejects cleaning plasma toward the wire 21 to remove foreign matters such as organic substances adhering to the surface of the wire 21. Since the cleaning plasma unit 60 converts the cleaning plasma gas into plasma in an open state, it becomes oxidized plasma. For this reason, although the foreign matter can be efficiently removed from the surface of the wire 21, the surface of the wire 21 is oxidized. After the cleaning plasma unit 60 injects the cleaning plasma, the wire 21 is sent downward, and the reduction plasma unit 70 injects the reducing plasma. The reducing plasma is a plasma made of a mixed gas of argon and hydrogen, and has a function of reducing the surface of the wire 21. Therefore, when the reducing plasma is injected, the oxide film or oxide on the surface of the wire 21 is removed, and the wire 21 is sent to the capillary 15 as a clean surface. Thus, since this embodiment performs the reduction after removing the foreign matter on the surface of the wire 21, the surface of the wire 21 can be a clean surface free of foreign matter and oxide film or oxide. Quality can be improved.

  Another embodiment of the present invention will be described with reference to FIG. In the present embodiment, the cleaning plasma unit 60 and the reduction plasma unit 70 of the embodiment with reference to FIG. 9 are attached to the bonding head 13. This embodiment has the same effect as described above with reference to FIG.

  11 Base, 11a Upper frame, 12 XY table, 13 Bonding head, 14 Bonding arm, 15 Capillary, 16 Bonding stage, 17, 18 Wire guide, 19 Air guide, 20 Wire spool, 21 Wire, 30 Wire cleaning plasma unit, 31a Upper half casing, 31b Lower half casing, 31c, 31d Wall, 32a, 32b Pipe, 33a, 33b Hole, 34 Gas inlet pipe, 35a, 35b Electrode, 36a, 36b Recessed part, 36c Hollow part, 37a, 37b Boss, 38a , 38b protrusion, 39 recess, 39a, 39b tip surface, 41a, 41b plasma generating electrode, 42a, 42b connection line, 45 DC pulse power supply device, 46 semiconductor die, 47 substrate, 50 space, 55 high frequency power supply device Device, 56 argon gas tank, 57 mixed gas tank, 60 cleaning plasma unit, 61, 71 chamber, 62, 72 plasma nozzle, 63, 73 gas inlet, 64, 74 casing, 65, 75 external electrode, 66, 76 center electrode, 67 , 77 Ground wire, 68, 78 Coil, 69, 79 Matching device, 70 Reduction plasma unit, 100 Wire bonding device.

Claims (8)

A base part;
A bonding head for moving a bonding tool in the XYZ directions with respect to the base portion;
A wire spool attached to the base portion and supplying a wire to the bonding tool;
A wire cleaning plasma unit disposed between the wire spool and the bonding tool,
The wire cleaning plasma unit comprises:
A hollow casing into which an inert gas is introduced so that the internal pressure is higher than atmospheric pressure;
Each hole provided in each casing wall facing so that the wire is inserted;
Each electrode provided facing the inner surface of each casing wall at the periphery of each hole, and
Conducting electricity between the electrodes, and cleaning the wires through the wires in plasma generated in a state where no air enters the space between the electrodes in the casing;
A wire bonding apparatus. The wire bonding apparatus according to claim 1,
The wire cleaning plasma unit is attached to the bonding head;
A wire bonding apparatus. The wire bonding apparatus according to claim 1,
And at least two wire guides that are attached to the base portion and guide the wires supplied from the wire spool in a linear direction,
The wire cleaning plasma unit is attached to the base between the wire guides;
A wire bonding apparatus. The wire bonding apparatus according to any one of claims 1 to 3,
The casing is provided on the outer surface of each wall with each pipe communicating with each hole and through which the wire is inserted.
A wire bonding apparatus. A base part;
A bonding head for moving a bonding tool in the XYZ directions with respect to the base portion;
A wire spool attached to the base portion and supplying a wire to the bonding tool;
A wire bonding apparatus including: at least two wire guides that are attached to the base portion and guide the wires supplied from the wire spool in a linear direction;
A cleaning plasma unit that sprays a cleaning plasma jet in an air-released state toward the wires between the wire guides,
A wire bonding apparatus comprising: The wire bonding apparatus according to claim 5,
A reducing plasma unit that is disposed on the bonding tool side of the cleaning plasma unit and sprays the reducing plasma to the wires on which the cleaning plasma has been sprayed between the wire guides in an open state between the wire guides;
A wire bonding apparatus comprising: A base part;
A bonding head for moving a bonding tool in the XYZ directions with respect to the base portion;
A wire bonding apparatus including a wire spool attached to the base portion and supplying a wire to the bonding tool,
A cleaning plasma unit attached to the bonding head and spraying a cleaning plasma jet toward the wire in an air-released state;
A wire bonding apparatus comprising: The wire bonding apparatus according to claim 7, wherein
A reduction plasma unit that is attached to the bonding head on the bonding tool side of the cleaning plasma unit and that blows a reduction plasma to the wire on which the cleaning plasma has been sprayed in a state of being opened to the atmosphere;
A wire bonding apparatus comprising:

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