JP2013175797A - Plasma etching method, plasma etching device, and storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique capable of controlling a profile of an etching rate and suppressing particles due to etching of a processing container and others.SOLUTION: A plasma etching method includes the steps of: (a) removing a deposition deposited on a processing container 2 by plasma obtained by transforming a cleaning gas into plasma; then (b) depositing a CF film in a portion exposed to plasma inside the processing container by the plasma obtained by transforming a deposition gas including carbon and fluorine into plasma; then (c) mounting a wafer W on a mounting table in the processing container and etching the wafer W by plasma obtained by transforming an etching gas into plasma; thereafter, (d) carrying the wafer W out of the processing container; and thereafter, carrying out the steps (a) to (d).

Description

  The present invention relates to a technique for performing a plasma etching process on a substrate.

  For example, in a manufacturing process of a semiconductor substrate such as a semiconductor wafer W (hereinafter referred to as “wafer”) or an FPD substrate, there is a process of etching the substrate in a reduced pressure atmosphere. An example of a plasma etching apparatus that performs this process will be briefly described with reference to FIG. 13. In FIG. 13, reference numeral 1 denotes a vacuum chamber, and a substrate, for example, a wafer W is placed in the vacuum chamber 1. A mounting table 11 is provided, and a processing gas supply unit 12 serving as an upper electrode for plasma generation is provided so as to face the mounting table 11. Then, the processing gas is supplied from the processing gas supply unit 12 into the vacuum chamber 1, and the vacuum chamber 1 is evacuated by a vacuum pump (not shown) through the exhaust path 13, while the high-frequency power source 14 supplies the processing gas supply unit 12 with the vacuum. By applying the high frequency power, plasma of a processing gas is formed in a space above the wafer W, whereby the etching process for the wafer W is performed. At this time, the wafer temperature is adjusted by temperature control means (not shown) built in the mounting table 11.

  When performing the etching process, depending on the film type, for example, as shown in FIG. 14, the etching rate of the outer edge region may be larger than the center of the wafer W. In this case, side etching is easily performed in the outer edge region of the wafer W. The perpendicularity of the etching shape is deteriorated. As an example in which such a tendency becomes large, a gate electrode made of, for example, polysilicon used for a space of a gate structure, etching of a resist antireflection film, or the like is known. The reason why the etching rate of the outer edge region of the wafer W is increased is presumed that in the interior of the vacuum chamber 1, more active species are generated in the region closer to the side wall than in the central portion due to the plasma formation of the etching gas. . P in FIG. 14 schematically shows the state of plasma.

  On the other hand, in the above-described etching apparatus, various methods are employed in order to control the etching rate in the surface of the wafer W and ensure a desired profile of the etching rate. One of the desired profiles is to obtain a uniform etching rate over the surface of the wafer W. For this reason, as described in Patent Document 1, for example, in the peripheral region of the wafer W in the mounting table 11. A configuration in which a focus ring is provided, a configuration in which the wafer temperature is controlled to change between the central region and the outer edge region by the temperature control means built in the mounting table 11, and the supply of processing gas from the processing gas supply unit 12 Various methods have been studied, such as a configuration in which the amount is controlled to change between the central region and the outer edge region of the wafer, and a configuration in which the shape of the processing gas supply unit is devised as described in Patent Document 2. Yes.

  However, the method for controlling the temperature of the mounting table 11 has a limit in the temperature difference that can be controlled, and the method for controlling the supply amount of the processing gas has a small change in the obtained etching rate profile. Further, although the method of Patent Document 1 and Patent Document 2 can obtain good results depending on the type of film to be etched, it is not sufficient as it is like the etching of the gate electrode and the antireflection film. There is.

  The vacuum chamber 1 is made of aluminum or the like, but during the etching process, the vacuum chamber 1 itself and components such as the mounting table 11 and the focus ring provided therein are also exposed to plasma. In contact with the active species of the etching gas. Therefore, as the etching process is repeated, the metal on the inner surface of the vacuum chamber 1 and the outer surface of the constituent member (parts) may be etched and scattered to cause generation of particles. For this reason, about the member which may be etched by the plasma inside the vacuum chamber 1, such as the inner wall surface of the vacuum chamber 1 or the side peripheral portion of the mounting table 11, by coating the surface with Y (yttria), Prevention of particle contamination caused by the etching is performed. However, the etching conditions change and the yttria itself may be etched, and there is concern about yttria contamination of the wafer W. At this time, it has been studied that the yttria coated on the vacuum chamber 1 or the like is heated or irradiated with a laser so that the yttria surface is densely cured and hard to be etched. At present, it has not been put into practical use. Furthermore, if the vacuum chamber 1 or the above-described components are consumed due to etching, their lifetimes are shortened, so that the replacement time is earlier, the parts cost (COC) per hour is increased, and the cost of the apparatus is increased. There is also a problem.

Japanese Patent Laying-Open No. 2005-033062 JP 2007-227829 A

  The present invention has been made under such circumstances, and an object of the present invention is to control the etching rate profile so that the etching rate is smaller at the outer edge than the center of the substrate. An object of the present invention is to provide a technique capable of suppressing the generation of particles caused by etching of components inside a container or a processing container.

For this reason, the present invention provides a cleaning step (a) in which a cleaning gas is supplied into the processing container, and deposits adhered in the processing container are removed by plasma obtained by converting the cleaning gas into plasma.
Next, a film-forming gas containing carbon and fluorine is supplied into the processing container, and a film containing carbon and fluorine is formed in the processing container by plasma obtained by converting the film-forming gas into plasma. Step (b);
Next, an etching step (c) of mounting a substrate on a mounting table in the processing container, supplying an etching gas into the processing container, and etching the substrate with plasma obtained by converting the etching gas into plasma. When,
And (d) carrying out the substrate from the processing container after the etching step (c),
The steps (a) to (d) are performed after the step (d) of unloading the substrate is completed.

Here, the film forming step (b) may be performed by placing a dummy substrate on the mounting table. The cleaning step (a) may be performed after the etching step (c) is performed on one substrate. At this time, as the cleaning gas, oxygen gas, a mixed gas of oxygen gas and SF ₆ gas, or a mixed gas of oxygen gas and NF ₃ gas can be used. Further, as the film forming gas, CxFyHz (x and y are integers of 1 or more, z is 0 or an integer of 1 or more) gas can be used. The said deposit | attachment contains the film | membrane containing the carbon and fluorine formed into a film in the processing container.

The plasma etching apparatus of the present invention comprises a plasma generating means for converting a gas into a plasma in the processing vessel,
Means for supplying a cleaning gas in the processing container for removing deposits adhering to the processing container;
Means for supplying a film-forming gas containing carbon and fluorine into the processing container in order to form a film containing carbon and fluorine in the processing container;
Means for supplying an etching gas for etching the substrate mounted on the mounting table in the processing container in the processing container;
Plasmaizing the cleaning gas in a processing container to remove the deposits, and then converting the film forming gas into plasma in the processing container to form a film containing carbon and fluorine in the processing container. Forming a film, then converting the etching gas into plasma in a processing container, performing etching on the substrate placed on the mounting table, and then unloading the substrate from the processing container, And a means for controlling each of the means so as to perform the series of steps after the substrate is unloaded.

Here, the inner wall surface of the processing container and the side surface of the mounting table may be coated with yttria. As the cleaning gas, oxygen gas, a mixed gas of oxygen gas and SF ₆ gas, or a mixed gas of oxygen gas and NF ₃ gas can be used. As the film forming gas, CxFyHz (x and y are 1). The above integer, z is 0 or an integer of 1 or more) gas can be used.

The storage medium of the present invention is a storage medium that stores a computer program that is used in a plasma etching apparatus and that operates on a computer.
The computer program includes a group of steps so as to execute any one of the plasma etching methods.

  According to the present invention, since the film containing carbon and fluorine is formed in the processing container and then the etching process is performed on the substrate, the active species generated when the etching gas is turned into plasma. Reacts with a film containing carbon and fluorine formed on the inner surface of the side wall of the processing vessel. As a result, in the region close to the side wall inside the processing vessel, the active species are consumed by the reaction with the film containing carbon and fluorine, so that the amount used for etching the substrate is reduced, and the outer edge is more than the center of the substrate. The profile of the etching rate can be controlled so that the etching rate becomes small in FIG. This makes it easier to control the etching conditions for improving the in-plane uniformity of the etching rate when etching a film such as a gate oxide film that tends to have a higher etching rate in the outer edge region than the center of the substrate. Become.

  In addition, by forming a film containing carbon and fluorine in the processing container, the inner surface of the processing container and the outer surface of a component such as a mounting table may be directly exposed to the active species of the etching gas during the etching process. Thus, the inner wall surface of the processing vessel can be protected from sputtering by the etching gas. For this reason, it is possible to suppress the metal forming the processing container and the like from being etched and scattered, and reattaching to the substrate to contaminate the substrate, and to prolong the life of the processing container and the constituent members. it can.

First, an outline of the etching method of the present invention will be described. In the present invention, when plasma etching is performed on a substrate, for example, a wafer W inside the processing container 2, first, a cleaning process is performed to remove deposits attached to the inside of the processing container 2. This cleaning step is performed by supplying a cleaning gas into the processing container 2, converting the cleaning gas into plasma, and decomposing and removing the deposits with the plasma. Here, the adhering substance is a film containing carbon and fluorine formed on the inner surface of the processing container 2 or the outer surface of the constituent member in the processing container 2 as described later, or in the etching process of the wafer W. It means what has adhered. As the cleaning gas, O ₂ (oxygen) gas, a mixed gas of O ₂ gas and SF ₆ gas, a mixed gas of O ₂ gas and NF ₃ gas, or the like can be used.

Next, a film forming process is performed in which a film containing carbon and fluorine is formed in a portion exposed to plasma in the processing container 2. This film forming step is performed by supplying a film forming gas containing carbon and fluorine into the processing container 2 and converting the film forming gas into plasma, whereby the film forming process inside the processing container 2 is performed. A film 21 containing carbon and fluorine is formed on a portion in contact with the gas, that is, on the inner wall surface of the processing container 2 or on the outer surface of a constituent member such as a mounting table or a focus ring of the wafer W (not shown). Hereinafter, in the present invention, the film 21 containing carbon and fluorine is referred to as a CF film (fluorine-added carbon film). As the film forming gas, CxFyHz (x, y is an integer of 1 or more, z is an integer of 0 or 1 or more) gas, for example, CHF ₃ gas, CH ₂ F ₂ gas, CH ₃ F gas can be used. These gases may be used alone, two of them may be used in combination, or all of them may be used. Further, these gases may be used in combination with C ₄ F ₈ gas or He gas.

Next, the wafer W is placed inside the processing container 2 and an etching process is performed on the wafer W. In this etching step, an etching gas is supplied into the processing container 2 and the etching gas is turned into plasma. For example, the film to be etched is a gate electrode made of polysilicon or a resist antireflection film. Further, as the etching gas, a gas that reacts with the CF film 21 formed inside the processing container 2 in the film forming step and does not adversely affect the etching process of the film on the surface of the wafer W is used. For example, when etching a SiN film, a combination of CF ₄ gas, CH ₃ F gas, and Ar gas is used, and when etching a gate electrode made of polysilicon, HBr gas, O ₂ gas, or the like is used. .

  Next, an example of a plasma etching apparatus that performs the plasma etching method of the present invention will be described with reference to FIG. The plasma etching apparatus shown in FIG. 1 has a processing container 2 composed of a vacuum chamber, a mounting table 3 disposed at the center of the bottom surface in the processing container 2, and the mounting table 3 facing the mounting table 3. The upper electrode 4 is provided.

  The processing container 2 is grounded, and a vacuum exhaust means 24 is connected to an exhaust port 22 on the bottom surface of the processing container 2 via an exhaust pipe 23. A pressure adjusting unit (not shown) is connected to the vacuum evacuation unit 24, so that the inside of the processing vessel 2 is maintained at a desired degree of vacuum. A transfer port 25 for the wafer W is provided on the wall surface of the processing chamber 2, and the transfer port 25 can be opened and closed by a gate valve G.

The mounting table 3 includes a lower electrode 31 and a support 32 that supports the lower electrode 31 from below, and is disposed on the bottom surface of the processing container 2 via an insulating member 33. An electrostatic chuck 34 is provided on the top of the mounting table 3, and a wafer W is electrostatically attracted onto the mounting table 3 by applying a voltage from a high-voltage DC power supply 35. The mounting table 3 incorporates a heater 36 connected to a power source 36a so that the wafer W on the mounting table 3 can be heated. Further, a temperature control flow path 37 through which a predetermined temperature control medium passes is formed in the mounting table 3, and is configured to maintain the wafer W at a set temperature during etching.
Furthermore, a gas flow path 38 for supplying a heat conductive gas such as He (helium) gas as a backside gas is formed inside the mounting table 3, and this gas flow path 38 is formed on the upper surface of the mounting table 3. Opened at several places. These openings communicate with a through hole 34 a provided in the electrostatic chuck 34.

  The lower electrode 31 is grounded through a high pass filter (HPF) 51, and a high frequency power source 52 having a frequency of 13.56 MHz, for example, is connected through a matching unit 53. The high frequency supplied from the high frequency power source 52 is for drawing ions in the plasma into the wafer W by applying bias power to the wafer W. Further, a focus ring 39 is disposed on the outer peripheral edge of the lower electrode 31 so as to surround the electrostatic chuck 34, and the plasma is focused on the wafer W on the mounting table 3 through the focus ring 39 when plasma is generated. Has been.

  The upper electrode 4 is formed in a hollow shape, and a plurality of holes 41 for dispersing and supplying the processing gas into the processing container 2 are arranged on the lower surface thereof, for example, to constitute a gas shower head. A gas introduction pipe 42 serving as a gas supply path is provided at the center of the upper surface of the upper electrode 4, and the gas introduction pipe 42 passes through the center of the upper surface of the processing container 2 through an insulating member 43. The gas introduction pipe 42 is branched into, for example, three pipes on the upstream side to form branch pipes 42A to 42C, which are connected to gas supply sources 44A to 44C via valves VA to VC and flow rate control units 43A to 43C, respectively. It is connected. These valves VA to VC and flow rate control units 43A to 43C constitute a gas supply system 45 to control the gas flow rate and supply / disconnection of each gas supply source 44A to 44C by a control signal from the control unit 100 described later. It is configured to be able to. In this example, the gas supply source 44A, the gas supply source 44B, and the gas supply source 44C are a cleaning gas supply source, a film forming gas (CFxHy gas) supply source, and an etching gas supply source, respectively. Further, the gas supply source 44A, the valve VA, and the flow rate control unit 43A correspond to means for supplying the cleaning gas into the processing container 2, and the gas supply source 44B, the valve VB, and the flow rate control unit 43B include a film containing CFxHy gas. The gas supply source 44 </ b> C, the valve VC, and the flow rate control unit 43 </ b> C correspond to means for supplying the etching gas into the processing container 2.

  The upper electrode 4 is grounded via a low pass filter (LPF) 54, and a high frequency power supply 55 having a frequency higher than that of the high frequency power supply 52, for example, 60 MHz, is connected via a matching unit 56. The high frequency from the high frequency power supply 55 connected to the upper electrode 4 serves as a plasma generating means for converting the cleaning gas, the film forming gas, and the etching gas into plasma.

  Parts exposed to plasma inside the processing container 2 such as the inner wall surface of the processing container 2 and the outer surfaces of the components such as the mounting table 3 and the focus ring 39 are coated with Y (yttria). . This yttria coating is performed, for example, by spraying yttria in the form of a spray on the entire inner wall surface of the processing container 2 or the entire outer surface of the constituent member.

  In addition, the plasma etching apparatus is provided with a control unit 100 including a computer, for example. The control unit 100 includes a data processing unit including a program, a memory, and a CPU. The control unit 100 sends a control signal to each unit of the plasma etching apparatus to the program, and advances each step to be described later. An instruction is incorporated to perform plasma processing on W. In addition, for example, the memory has an area in which processing parameter values such as processing pressure, processing time, gas flow rate, and power value are written, and these processing parameters are read when the CPU executes each instruction of the program. A control signal corresponding to the parameter value is sent to each part of the plasma etching apparatus. This program (including programs related to processing parameter input operations and display) is stored in a storage unit (not shown) such as a computer storage medium such as a flexible disk, a compact disk, or an MO (magneto-optical disk) and installed in the control unit 100. .

  Next, an embodiment of the plasma etching method of the present invention using the plasma etching apparatus will be described with reference to FIGS. 2 to 4 by taking as an example the case of etching a SiN film formed on the wafer W surface. . First, the gate valve G is opened, and a dummy wafer DW having a size of 300 mm (12 inches) is loaded into the processing container 2 by a transfer mechanism (not shown) (step S1, FIG. 3A). Then, after this wafer DW is horizontally placed on the mounting table 3, the wafer W is electrostatically attracted to the mounting table 3. Thereafter, the transfer mechanism is moved away from the processing container 2 to close the gate valve G, and the backside gas is continuously supplied from the gas passage 38. Thereafter, for example, the following steps are performed.

(Step S2: Cleaning process in processing container)
As shown in FIG. 3B, the inside of the processing container 2 is evacuated by the vacuum exhaust means 24 through the exhaust pipe 23, and thus the inside of the processing container 2 is maintained at a predetermined degree of vacuum, for example, 13.3 Pa (100 mTorr). Thereafter, a cleaning gas, for example, a mixed gas of O ₂ gas and SF ₆ gas is supplied from the gas supply system 45 at a flow rate of O ₂ gas / SF ₆ gas = 300 sccm / 300 sccm for 30 seconds. On the other hand, a high frequency of 60 MHz and 1000 W is supplied to the upper electrode 4 to turn the cleaning gas into plasma.

  At this time, the CF film 21 formed in the processing container 2 during the previous etching process of the wafer W and the etching process are generated on the inner wall surface of the processing container 2 and the outer surface of the constituent member such as the mounting table 3. There are deposits consisting of deposits and the like. On the other hand, the plasma contains active species of oxygen. When the deposit is exposed to the active species atmosphere, the deposit is decomposed by the active species of oxygen, and the exhaust pipe together with the atmosphere in the processing container 2 Then, the air is exhausted to the outside of the processing container 2 through 23, and the deposits in the processing container 2 are thus removed.

(Step S3: Film formation process of CF film in the processing container 2)
As shown in FIG. 3C, the inside of the processing container 2 is evacuated by the vacuum exhaust means 24 through the exhaust pipe 23, and thus the inside of the processing container 2 is maintained at a predetermined degree of vacuum, for example, 26.7 Pa (200 mTorr). Thereafter, a film forming gas such as CF ₄ gas and CH ₃ F gas is supplied from the gas supply system 45 at a flow rate of 250 sccm and 140 sccm, respectively, for 90 seconds, for example. On the other hand, a high frequency of 60 MHz and 600 W is supplied to the upper electrode 4 to turn the film forming gas into plasma.

  The plasma contains active species of carbon, fluorine, and hydrogen, and is exposed to the plasma in the processing vessel 2, that is, on the inner wall surface of the processing vessel 2 and the outer surface of the structural member such as the mounting table 3. A CF film 21 is formed. Thereafter, the dummy wafer DW is unloaded from the post-processing container 2 (step S4, FIG. 4A), and then the product wafer W is loaded into the processing container 2 and electrostatically adsorbed onto the mounting table 3 as described above. (Step S5, FIG. 4B).

(Step S6: Etching of Product Wafer W)
As shown in FIG. 4C, the inside of the processing container 2 is evacuated by the vacuum exhaust means 24 through the exhaust pipe 23, and thus the inside of the processing container 2 is maintained at a predetermined degree of vacuum, for example, 2.67 Pa (20 mTorr). Thereafter, an etching gas such as CF ₄ gas, CHF ₃ gas, and Ar gas is supplied from the gas supply system 45 at a flow rate of 250 sccm, 70 sccm, and 200 sccm, for example, for 30 seconds. On the other hand, a high frequency of 60 MHz and 700 W is supplied to the upper electrode 4 to turn the film forming gas into plasma, and a high frequency of 13.56 MHz and 550 W is supplied to the mounting table (lower electrode) 3.

  The plasma contains active species of carbon, fluorine, and hydrogen, whereby the SiN film on the surface of the wafer W reacts with the active species and the etching process proceeds. At this time, since the CF film 21 formed in the processing container 2 in the film forming step has the same composition as the etching gas, the etching gas is not contained in the processing container 2 even when exposed to the plasma of the etching gas. There is no possibility that different components scatter and adversely affect the etching process.

  After performing the etching process on the product wafer W in this manner, the product wafer W is unloaded from the processing container 2 (step S7), and the process is finished for the product wafer W. Next, when processing the next wafer W, the dummy wafer DW is loaded again into the processing container 2 and steps S1 to S7 are performed. In this way, each time a process is performed on one wafer W, the cleaning process of the processing container 2 → the film forming process of the CF film on the processing container 2 → the etching process on the product wafer W is repeated.

  In such a method, since the CF film 21 is formed on the inner wall surface of the processing chamber 2, the profile of the etching rate in the wafer W plane can be controlled as will be apparent from the examples described later. That is, by changing the film forming conditions such as the type of film forming gas, the film forming time, and the flow rate ratio of the film forming gas, the profile of the obtained etching rate changes. When the CF film 21 is not formed, the CF film 21 is formed on the inner wall surface of the processing vessel 2 as in the present invention even in the process in which the etching rate is higher in the outer edge region than the center of the wafer W. By optimizing the film formation conditions, the etching rate of the wafer W can be made uniform without changing the etching process itself of the wafer W.

  The reason is presumed as follows. That is, since the CF film 21 is formed on the side wall of the processing vessel 2, the CF film 21 reacts with the active species obtained by the plasma conversion of the etching gas. Further, when the film forming conditions such as the type of film forming gas and the flow rate ratio of the film forming gas are changed, the generation state of the active species in the processing container 2 is different, and originally in the region closer to the side wall than the center of the processing container 2. The amount of active species increases, the amount of active species becomes substantially uniform over the center of the processing vessel 2 and the region close to the side wall, or the amount of active species is closer to the side of the center of the processing vessel 2 It is presumed that there will be more than the area close to. Thereby, depending on the film forming conditions, the amount of active species contributing to the etching of the wafer W in the vicinity of the side wall of the processing vessel 2 is reduced, and the etching rate is reduced at the outer edge than the center of the wafer W. A rate profile can be obtained.

  For this reason, in the etching of a film such as a gate electrode or an antireflection film, which tends to have a higher etching rate in the outer edge region than the center of the wafer W, the etching conditions for increasing the in-plane uniformity of the etching rate are Control becomes easy. In other words, a profile that was originally difficult to control and can be easily obtained by adjusting the film formation conditions such that the etching rate is smaller at the outer edge than the center of the wafer W. In addition to this control, Further, by controlling other conditions such as changing the supply amount of the etching gas in the wafer W surface and changing the temperature of the mounting table in the wafer W surface, etching with high uniformity in the surface can be easily performed as a result. The rate can be secured.

  In addition, since the CF film 21 is formed in the portion exposed to the plasma inside the processing container 2 before performing the etching process on the wafer W, as will be apparent from the examples described later, a processing container such as yttrium is used. It is possible to reduce the amount of the metal constituting the inner surface of 2 and the outer surface of the constituent member by being sputtered during the etching process and attaching to the wafer W as particles. That is, during the etching process, since the CF film 21 is formed on the surface of the processing container 2 or the like, it is possible to prevent the inner wall surface or the like of the processing container 2 from being directly exposed to the active species of the etching gas. Thus, since the CF film 21 can protect the inner wall surface of the processing vessel 2 from sputtering of the etching gas, the amount of etching of the metal forming the processing vessel 2 is reduced.

  Furthermore, as described above, since the consumption of the plasma in the metal forming the processing container 2 and the constituent member can be suppressed, the life of these components can be extended, and the replacement cycle of the constituent member and the like becomes longer. These parts costs per hour (COC) can be reduced.

  Here, in the present invention, the processing container 2 may be cleaned after the etching process is performed on the plurality of wafers W in the etching process. However, if the cleaning process and the subsequent film formation process of the CF film 21 are performed each time one wafer W is etched, the state of the etching process becomes the same every time. On the other hand, the etching process can always be performed in the same state, and the uniformity between the surfaces of the process is improved.

  In the above-described example, the cleaning process and the film forming process are performed in a state where the dummy wafer DW is mounted on the mounting table 3. However, the cleaning process and the film forming process are performed without mounting the dummy wafer DW on the mounting table 3. You may make it perform a process. At this time, in the film forming process, the CF film 21 is also formed on the surface of the mounting table 3. Even if the CF film 21 is formed in this way, electrostatic adsorption when the product wafer W is mounted is performed. It has been confirmed by experiments of the present inventors that there is no problem with force.

<Example 1>
Using the plasma etching apparatus shown in FIG. 1, the process is performed in the order of cleaning process → CF film formation process → etching process according to steps S1 to S7 shown in FIG. 2, and the SiN film formed on the wafer W is processed. Etching was performed. At this time, the cleaning process and the etching process were performed under the same conditions. However, for the film forming process of the CF film 21, the processing pressure was set to 26.6 Pa, and the film forming gas, the high frequency power, and the processing time were changed as described later. Processed. With respect to the wafer W thus etched, the average value of the etching rate, the in-plane uniformity of the etching rate, and the number of yttrium on the wafer were measured.

Here, the average value of the etching rate was measured at 33 measurement points in the diameter direction of the wafer W, and calculated from these average values. Further, the in-plane uniformity of the etching rate was calculated from Nano Spec 8300X, and the number of yttrium was measured using a detection device made of TREX. FIG. 6 shows the film formation conditions, the etching rate, the in-plane uniformity of the etching rate, and the measurement results of the number of yttrium. Here, sample 1 in the figure is a comparative example in which the film forming process of the CF film in the processing container 2 is not performed and the cleaning process → the etching process is performed. Cleaning conditions and etching conditions are as follows.
[Cleaning conditions]
Pressure in the processing container 2: 13.3 Pa (100 mTorr)
Cleaning gas: O ₂ gas / SF ₆ gas = 600 sccm / 600 sccm
High frequency power (upper electrode 4): frequency 60 MHz, 1000 W
Processing time: 30 seconds [Etching conditions]
Pressure in the processing container 2: 2.67 Pa (20 mTorr)
Etching gas: CF ₄ gas 250 sccm, CHF ₃ gas 70 sccm,
Ar gas 200sccm, O ₂ gas 7sccm
High frequency power (upper electrode 4): frequency 60 MHz, 700 W
High frequency power (mounting table 3): Frequency 13.56 MHz, 550 W
Processing time: 30 seconds
<Etching rate depends on deposition gas system>
Using Sample 1, Sample 6, and Sample 16 in Example 1, it was confirmed how the etching rate profile was affected by changing the type of film forming gas in the CF film forming process. These etching rate profiles are shown in FIG. Here, the film forming gas of Sample 6 is CHF ₃ gas: 250 sccm and CH ₃ F gas: 140 sccm, and the film forming gas of Sample 16 is CH ₃ F gas: 140 sccm and He gas 250 sccm.

As a result, by setting the type of gas combined with the CH ₃ F gas to CHF ₃ gas, it is possible to control the etching rate profile so that the etching rate is smaller on the outer edge side than the center of the wafer W, and CH ₃ F It is recognized that the etching rate profile varies depending on whether the gas used in combination with the gas is CHF ₃ gas or He gas, and the film forming gas type in the film forming process is adjusted accordingly. It is understood that the etching rate profile can be controlled.
<Dependence of etching rate on film formation time>
The effect of changing the processing time of the CF film forming process on the etching rate profile was confirmed. With respect to these etching rate profiles, FIG. 8 shows a case where CHF ₃ gas and CH ₃ F gas are used as film forming gases (sample 6 and sample 10 are used). Here, the processing time of sample 6 is 30 seconds, and the processing time of sample 10 is 90 seconds. Further, FIG. 9 shows a case where CHF ₃ gas and CH ₂ F ₂ gas are used as film forming gases (when sample 12 and sample 14 are used). Here, the processing time of the sample 12 is 30 seconds, and the processing time of the sample 14 is 90 seconds.

As a result, it is recognized that the profile of the etching rate is changed by changing the processing time in the film forming process, and it is understood that the etching rate profile can be controlled by adjusting the processing time.
<Dependence of etching rate on deposition gas ratio>
It was confirmed how the etching rate profile was affected by changing the gas ratio of the deposition gas in the CF film deposition process. With respect to these etching rate profiles, FIG. 10 shows a case where CHF ₃ gas and CH ₃ F gas are used as the deposition gas (when Sample 17 and Sample 10 are used). Gas ratio here deposition gas sample 17, CHF ₃ gas: CH ₃ F gas = 250 sccm: a 70 sccm, gas ratio of the film forming gas of the sample 10, CHF ₃ gas: CH ₃ F gas = 250 sccm: 140 sccm.

FIG. 11 shows the case where CHF ₃ gas, CH ₂ F ₂ gas, and CH ₃ F gas are used as the film forming gas (when sample 6 and sample 7 are used). Here, the gas ratio of the film forming gas of sample 6 is CHF ₃ gas: CH ₂ F ₂ gas: CH ₃ F gas = 250 sccm: 0 sccm: 140 sccm, and the gas ratio of the film forming gas of sample 7 is CHF ₃ gas. : CH ₂ F ₂ gas: CH ₃ F gas = 210 sccm: 40 sccm: 140 sccm.

As a result, it is recognized that the etching rate profile is changed by changing the gas ratio of the film forming gas in the film forming process, and from this, the etching rate profile can be controlled by adjusting the gas ratio. Understood.
From the above results, the etching rate is different between the case where the film forming step is performed (sample 2 to sample 17) and the case where the film forming step is not performed (sample 1). However, by changing the film forming conditions such as the type of film forming gas, the flow rate ratio, and the processing time, the profile in which the etching rate becomes smaller on the outer edge side than the center of the wafer W or the etching rate of the wafer W is reduced. It was recognized that various etching rate profile shapes can be obtained, such as a profile that once decreases on the outer side than the center and increases again on the outer edge side, and that the profile can be controlled.
<Number of yttrium on wafer>
FIG. 12 shows a bar graph for each sample of the number of yttrium on the wafer measured in Example 1. Samples 10, 11, and 17 were below the detection limit of the detection device and could not be measured. From this result, when the film forming process is performed (sample 2 to sample 17), the number of yttrium is less than that when the film forming process is not performed (sample 1), and by performing the film forming process, It was found that yttrium contamination can be suppressed. In addition, since Samples 10, 11, and 17 have a detection lower limit of 4 × 10 ⁹ atoms / cm ² or less, it is possible to secure a state in which yttrium is less likely to be etched by selecting film formation conditions in the film formation process. Is understood.
As described above, in the present invention, the plasma generation method is not limited to the above example. Furthermore, the substrate may be an FPD substrate or an LCD substrate in addition to the semiconductor wafer W.

It is sectional drawing which shows an example of the etching processing apparatus of this invention. It is process drawing which shows the etching processing method of this invention. It is process drawing which shows the etching processing method of this invention. It is process drawing which shows the etching processing method of this invention. It is explanatory drawing for demonstrating the effect | action of the etching processing method of this invention. It is explanatory drawing which shows the conditions of the Example performed in order to confirm the effect of this invention. It is a characteristic view which shows the profile of the etching rate measured in the said Example. It is a characteristic view which shows the profile of the etching rate measured in the said Example. It is a characteristic view which shows the profile of the etching rate measured in the said Example. It is a characteristic view which shows the profile of the etching rate measured in the said Example. It is a characteristic view which shows the profile of the etching rate measured in the said Example. It is a characteristic view which shows the yttrium number measured in the said Example. It is sectional drawing which shows the conventional etching processing apparatus. It is explanatory drawing for demonstrating the effect | action of the conventional etching processing method.

2 Processing vessel 24 Vacuum exhaust means 3 Mounting table 4 Upper electrode 45 Gas supply system 52 Vacuum exhaust means 55 High frequency power supply 66 Pressure detection means W Semiconductor wafer

Claims (11)

A cleaning step (a) of supplying a cleaning gas into the processing container and removing deposits adhering to the processing container by plasma obtained by converting the cleaning gas into plasma;
Then into the processing chamber, supplying a film forming gas and the composition of carbon and fluorine and hydrogen, with plasma the deposition gas obtained by plasma, a film containing carbon and fluorine into the processing chamber A film forming step (b) for forming a film;
Next, an etching step (c) of mounting a substrate on a mounting table in the processing container, supplying an etching gas into the processing container, and etching the substrate with plasma obtained by converting the etching gas into plasma. When,
And (d) carrying out the substrate from the processing container after the etching step (c),
After the step (d) of unloading the substrate is completed, the steps (a) to (d) are performed .
The etching target film on the substrate is a film whose etching rate in the outer peripheral region is higher than that in the center of the substrate in the etching step (c) when the film forming step (b) is not performed. Etching method. 2. The plasma etching method according to claim 1, wherein the film to be etched is a film selected from a silicon nitride film, a silicon film, and an antireflection film .   3. The plasma etching method according to claim 1, wherein the cleaning step (a) is performed after the etching step (c) is performed on a single substrate. 4. The plasma etching method according to claim 1 , wherein the cleaning gas is a mixed gas of oxygen gas and SF ₆ gas, or a mixed gas of oxygen gas and NF ₃ gas. 5.   5. The plasma etching method according to claim 1, wherein the deposit includes a film containing carbon and fluorine formed in a processing container. The film forming gas is CHF. ₃ Gas, CH ₂ F ₂ Gas and CH ₃ 6. The plasma etching method according to claim 1, wherein the plasma etching method is any one of F gas or a mixed gas of two or more selected from these gases. Plasma generating means for converting the gas into plasma in the processing vessel;
Means for supplying a cleaning gas in the processing container for removing deposits adhering to the processing container;
Means for supplying a film-forming gas having a composition of carbon, fluorine and hydrogen into the processing container in order to form a film containing carbon and fluorine in the processing container;
Means for supplying an etching gas for etching the substrate mounted on the mounting table in the processing container in the processing container;
Plasmaizing the cleaning gas in a processing container to remove the deposits, and then converting the film forming gas into plasma in the processing container to form a film containing carbon and fluorine in the processing container. Performing the step of forming a film, then performing the etching on the substrate placed on the mounting table by converting the etching gas into plasma in the processing container, and then carrying out the step of unloading the substrate from the processing container, Means for controlling each means so as to carry out the series of steps after unloading,
The plasma etching apparatus according to claim 1, wherein the film to be etched on the substrate is a film in which the etching rate in the outer edge region is higher than the center of the substrate in the etching step when the film forming step is not performed . 8. The plasma etching apparatus according to claim 7, wherein the film to be etched is a film selected from a silicon nitride film, a silicon film, and an antireflection film. 9. The plasma etching apparatus according to claim 7 , wherein the cleaning gas is a mixed gas of oxygen gas and SF ₆ gas, or a mixed gas of oxygen gas and NF ₃ gas. The film forming gas is CHF. ₃ Gas, CH ₂ F ₂ Gas and CH ₃ The plasma etching method according to any one of claims 7 to 9, wherein the plasma etching method is any one of F gases or a mixed gas of two or more selected from these gases. A storage medium for storing a computer program used in a plasma etching apparatus and operating on a computer,
A storage medium, wherein the computer program includes a group of steps so as to execute the plasma etching method according to any one of claims 1 to 6.

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