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JP2013069547A5 - Optical semiconductor device - Google Patents

Optical semiconductor device Download PDF

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Publication number
JP2013069547A5
JP2013069547A5 JP2011207273A JP2011207273A JP2013069547A5 JP 2013069547 A5 JP2013069547 A5 JP 2013069547A5 JP 2011207273 A JP2011207273 A JP 2011207273A JP 2011207273 A JP2011207273 A JP 2011207273A JP 2013069547 A5 JP2013069547 A5 JP 2013069547A5
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JP
Japan
Prior art keywords
semiconductor device
optical semiconductor
heat dissipation
metal
substrate
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Pending
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JP2011207273A
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Japanese (ja)
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JP2013069547A (en
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Priority to JP2011207273A priority Critical patent/JP2013069547A/en
Priority claimed from JP2011207273A external-priority patent/JP2013069547A/en
Publication of JP2013069547A publication Critical patent/JP2013069547A/en
Publication of JP2013069547A5 publication Critical patent/JP2013069547A5/en
Pending legal-status Critical Current

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Description

本発明は放熱基板を用いた光半導体装置に関する。 The present invention relates to an optical semiconductor device using a heat dissipation substrate.

上述の課題を解決するために、本発明に係る光半導体装置は、金属含浸炭素系基材と、該金属含浸炭素系基材の表面に設けられた金属反射層と、前記金属含浸炭素系基材の裏面にナノメートルオーダからサブミクロメートルオーダの幅の凸部及び凹部を有する第１の凹凸構造を形成した放熱基板と、該放熱基板の前記金属反射層上に形成された蛍光体層と、前記蛍光体層及び前記放熱基板より空間的に離れて配置された発光素子とを具備するものである。 To solve the problems described above, the optical semiconductor device according to the present invention, the metal-impregnated carbon-based substrate, a metal reflective layer provided on the surface of the metal impregnated carbon base material, the metal-impregnated carbon-based groups A heat radiating substrate having a first concavo-convex structure having convex portions and concave portions having a width of nanometer order to submicrometer order on the back surface of the material, and a phosphor layer formed on the metal reflective layer of the heat radiating substrate; The phosphor layer and the light emitting element arranged spatially separated from the heat dissipation substrate .

Claims (5)

金属含浸炭素系基材と、
該金属含浸炭素系基材の表面に設けられた金属反射層と、
前記金属含浸炭素系基材の裏面にナノメートルオーダからサブミクロメートルオーダの幅の凸部及び凹部を有する第１の凹凸構造を形成した放熱基板と、
該放熱基板の前記金属反射層上に形成された蛍光体層と、
前記蛍光体層及び前記放熱基板より空間的に離れて配置された発光素子と、
を具備する光半導体装置。 A metal-impregnated carbon-based substrate;
A metal reflective layer provided on the surface of the metal-impregnated carbon-based substrate;
A heat dissipating substrate formed with a first concavo-convex structure having convex portions and concave portions having a width of nanometer order to submicrometer order on the back surface of the metal-impregnated carbon-based substrate ;
A phosphor layer formed on the metal reflective layer of the heat dissipation substrate;
A light emitting device disposed spatially separated from the phosphor layer and the heat dissipation substrate;
An optical semiconductor device comprising: 前記放熱基板の第１の凹凸構造の高さはサブミクロメートルオーダ以上である請求項１に記載の光半導体装置。 The optical semiconductor device according to claim 1, wherein a height of the first concavo-convex structure of the heat dissipation substrate is not less than a submicrometer order. さらに、前記放熱基板の第１の凹凸構造の幅より大きい不規則的幅の第２の凹凸構造を前記金属含浸炭素系基材の裏面に形成した請求項１に記載の光半導体装置。 2. The optical semiconductor device according to claim 1, wherein a second uneven structure having an irregular width larger than a width of the first uneven structure of the heat dissipation substrate is formed on the back surface of the metal-impregnated carbon base material. 前記放熱基板の第２の凹凸構造はミクロメートルオーダ以上の幅の凸部及び凹部を有する請求項３に記載の光半導体装置。 The optical semiconductor device according to claim 3, wherein the second concavo-convex structure of the heat dissipation substrate has a convex portion and a concave portion having a width of a micrometer order or more. 前記放熱基板の第２の凹凸構造の高さはミクロメートルオーダ以上である請求項４に光半導体装置。 The optical semiconductor device according to claim 4, wherein a height of the second concavo-convex structure of the heat dissipation substrate is not less than a micrometer order.
JP2011207273A 2011-09-22 2011-09-22 Heat dissipation substrate, its manufacturing method, and semiconductor device using heat dissipation substrate Pending JP2013069547A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011207273A JP2013069547A (en) 2011-09-22 2011-09-22 Heat dissipation substrate, its manufacturing method, and semiconductor device using heat dissipation substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011207273A JP2013069547A (en) 2011-09-22 2011-09-22 Heat dissipation substrate, its manufacturing method, and semiconductor device using heat dissipation substrate

Publications (2)

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JP2013069547A JP2013069547A (en) 2013-04-18
JP2013069547A5 true JP2013069547A5 (en) 2014-10-16

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JP2011207273A Pending JP2013069547A (en) 2011-09-22 2011-09-22 Heat dissipation substrate, its manufacturing method, and semiconductor device using heat dissipation substrate

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015216353A (en) * 2014-04-23 2015-12-03 日東電工株式会社 Wavelength conversion junction member, wavelength conversion heat dissipation member, and light-emitting device
JP6924923B2 (en) 2015-12-22 2021-08-25 パナソニックＩｐマネジメント株式会社 Fluorescent wheel device, lighting device, and projection type image display device
US9983467B2 (en) 2016-03-08 2018-05-29 Panasonic Intellectual Property Management Co., Ltd. Phosphor wheel and projection-type image display device
JP6745486B2 (en) * 2016-03-08 2020-08-26 パナソニックＩｐマネジメント株式会社 Phosphor wheel and projection type image display device
JP6939805B2 (en) 2016-10-19 2021-09-22 ソニーグループ株式会社 Light source device and projection type display device
DE102018009292A1 (en) * 2018-11-26 2020-05-28 Harting Ag Electro-optical assembly with heat dissipation and method for producing such an assembly
JP7014207B2 (en) 2019-06-10 2022-02-01 セイコーエプソン株式会社 Wavelength converters, light source devices and projectors
JP2023006510A (en) * 2021-06-30 2023-01-18 日亜化学工業株式会社 Light-emitting module, vehicle lamp, and heat dissipation member

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10160898A (en) * 1996-11-29 1998-06-19 Sony Corp Fluorescence element and radiation image observation device
JP2006086391A (en) * 2004-09-17 2006-03-30 Nec Schott Components Corp Led package
JP5385054B2 (en) * 2009-08-26 2014-01-08 スタンレー電気株式会社 Heat dissipation material and manufacturing method thereof
JP5530165B2 (en) * 2009-12-17 2014-06-25 スタンレー電気株式会社 Light source device and lighting device

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