JP2012237596A - Radiation image sensor and photoelectric conversion element array unit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a radiation image sensor that can be easily assembled and can make the gap between a scintillator plate and a photoelectric conversion element array uniform and smaller.SOLUTION: A radiation image sensor includes: a scintillator plate that is provided with a scintillator layer on a substrate; and a photoelectric conversion element array unit that is provided with a photoelectric conversion element layer formed with plural photoelectric conversion elements constituting a photoelectric conversion element array and a spacer layer formed with plural spacers respectively in contact with the scintillator plate in order to maintain a uniform distance between the scintillator plate and the photoelectric conversion element layer.

Description

  The present invention relates to a radiation image sensor and a photoelectric conversion element array unit.

  In recent years, photosensitive films have been used in medical and industrial X-ray photography, but radiation imaging systems equipped with a radiation image sensor have become widespread from the viewpoint of real-time performance and maintenance costs.

Various radiation image sensors applicable to such a radiation imaging system are conceivable, but a flat panel detector is an example (see, for example, Patent Document 1).
Conventionally, as a flat panel detector, a direct conversion method and an indirect conversion method using a scintillator are known.

An indirect conversion type flat panel detector converts incident X-rays into visible light fluorescence by a scintillator, and determines the intensity of incident light by a photoelectric conversion element array in which photoelectric conversion elements (for example, photodiodes) are arranged in an array. Convert to the amount of charge.
The electric charge of the photoelectric conversion element array is converted into a current signal by a TFT transistor paired with each photoelectric conversion element, converted into a digital signal corresponding to the amount of current, and output.

JP 2002-116258 A

By the way, when manufacturing the above-described conventional indirect conversion type flat panel detector, a substance that directly forms a scintillator layer on a photoelectric conversion element array formed on a glass substrate [for example, CsI (Tl doped with thallium Tl). ) Etc.] was employed.
Here, since the photoelectric conversion element array formed on the glass substrate is not flat and has irregularities, it is difficult to completely uniform the thickness of the deposited cesium iodide.

In order to solve this problem, in recent years, a flat panel detector is bonded to a scintillator plate in which a scintillator is formed on a glass substrate and a photoelectric conversion element array in which photoelectric conversion elements are formed in an array on the glass substrate. The technology which comprises is proposed.
However, it is difficult to assemble the scintillator plate and the photoelectric conversion element array in a uniform distance relationship over the entire area, and the uniformity of the obtained image cannot be maintained due to the distance difference depending on the location. was there.

  The present invention has been made in view of the above, and when a radiation image sensor is configured by combining a scintillator plate and a photoelectric conversion element array, the assembly is easy, and the scintillator plate and the photoelectric conversion element array And a photoelectric conversion element array unit used for this radiation image sensor.

  In order to solve the above-described problems and achieve the object, a radiation image sensor includes a scintillator plate in which a scintillator layer is provided on a substrate, and a photoelectric conversion element in which a plurality of photoelectric conversion elements constituting a photoelectric conversion element array are formed. A photoelectric conversion element array unit provided with a layer, and a spacer layer formed with a plurality of spacers respectively in contact with the scintillator plate in order to maintain a uniform distance between the scintillator plate and the photoelectric conversion element layer; .

In this case, the spacer may be provided at a position that does not hinder the incidence of the fluorescence emitted from the scintillator layer on the photoelectric conversion element.
The spacers may be periodically arranged at a predetermined interval from each other.
Furthermore, the photoelectric conversion element array unit may have a protective layer that protects the photoelectric conversion element, and the spacer may be formed on the protective layer.

Furthermore, the substrate may be a glass substrate, and the scintillator layer may be provided on the glass substrate via a reflective film.
Further, a TFT paired with each photoelectric conversion element for reading a signal from the photoelectric conversion element array may be provided, and the spacer may be provided at a position corresponding to a position where the TFT is formed. .

Moreover, you may make it provide the sealing member which seals the said scintillator layer between the said board | substrate and the said photoelectric conversion element array.
Further, the space sealed by the seal member may be filled with an inert gas.
Furthermore, the pressure of the inert gas may be set lower than atmospheric pressure.
The spacer may be formed by photolithography.

  Further, in the photoelectric conversion element array unit that has a plurality of photoelectric conversion elements constituting the photoelectric conversion element array and is disposed opposite to the scintillator plate that converts incident radiation into fluorescence and constitutes a radiation image sensor, each of the scintillator plates A plurality of spacers that are in contact with each other and maintain a uniform distance between the scintillator plate and the photoelectric conversion element are provided.

The radiation image sensor according to the present invention is easy to assemble, and the gap between the scintillator plate and the photoelectric conversion element array can be made uniform and smaller.
In addition, according to the photoelectric conversion element array unit of the present invention, it is possible to obtain a radiation image sensor that is easy to assemble and has a uniform and smaller gap with the scintillator plate.

FIG. 1 is a cross-sectional view of the radiation image sensor of the first embodiment. FIG. 2 is an exploded cross-sectional view of the radiation image sensor of FIG. FIG. 3 is an explanatory schematic view of the planar arrangement of the spacer according to the first embodiment. FIG. 4 is a cross-sectional view of the radiation image sensor of the second embodiment. FIG. 5 is an explanatory schematic view of the planar arrangement of the spacer according to the second embodiment.

Next, embodiments will be described with reference to the drawings.
In the following description, a photodiode is taken as an example of a photoelectric conversion element, but other elements may be used as long as they are appropriate elements having a photoelectric conversion function.
[1] First Embodiment FIG. 1 is a cross-sectional view of a radiation image sensor according to a first embodiment.
FIG. 2 is an exploded cross-sectional view of the radiation image sensor of FIG.
The radiation image sensor 10 is roughly classified into a scintillator plate 11 that converts incident X-rays into visible light (fluorescence), and a photoelectric conversion element array that receives visible light converted by the scintillator plate 11 and converts it into image data. A unit 12 and a seal member 13 are provided.
The scintillator plate 11 is formed on the glass substrate 21 and the glass substrate 21, and reflects the fluorescent light, which is visible light generated by the X-ray and transmits the X-ray, and guides it to the photoelectric conversion element array unit 12 side. A layer 22, a protective film layer 23 for preventing deterioration of the reflective film layer 22 with time, a scintillator layer 24 for converting incident X-rays into visible light, and for preventing deterioration of the scintillator layer 24 due to moisture absorption. And a waterproof film layer 25.
In this case, the waterproof film layer 25 can be omitted if waterproofness can be ensured by other means.

Here, the manufacturing method of the scintillator plate 11 is demonstrated.
When the scintillator plate 11 is manufactured, a metal film such as AlNd is formed on the glass substrate 21 by sputtering to form the reflective film layer 22. Since the reflective film layer 22 can be formed as a thin film, attenuation of incident radiation (X-rays) can be suppressed to a minimum. Further, the reflection film layer 22 allows the fluorescent light (visible light) generated in the scintillator layer 24 by incident radiation to be efficiently guided to the photodiode 34 side, thereby improving the conversion efficiency, and thus a clear contrast with high contrast. It is possible to obtain a simple image.

Next, a protective film layer 23 is formed by laminating a silicon nitride film or a silicon oxide film on the reflective film layer 22. According to this protective film layer 23, the performance of the reflective film layer 22 can be maintained over a long period of time, and an image with high conversion efficiency can be obtained over a long period of time.
A scintillator layer 24 is formed on the protective film layer 23 by vapor deposition.
As described above, since the scintillator layer 24 is laminated on the reflective film layer 22 and the protective film layer 23 formed on the flat glass substrate 21, a photoelectric element having a non-uniform height as in the prior art. Since it is not formed on the array, the density is not uniform, and the scintillator crystal end on the photoelectric conversion element side is not particularly crushed, so that the fluorescence is not attenuated in the scintillator layer 24. Thus, it is possible to contribute to improvement of luminance and resolution.

Next, the configuration of the photoelectric conversion element array unit 12 will be described.
The photoelectric conversion element array unit 12 is formed on a glass substrate 31, a TFT layer 33 formed on the glass substrate 31, and a plurality of TFTs 32 for reading signals arranged in an array, and a plurality of TFT layers 33. A photoelectric conversion layer 35 in which photodiodes 34 are arranged in an array, a resin protective film layer 36 covering the photoelectric conversion layer 35, and a plurality of spacers 37 are interspersed, and the spacers are stacked on the protective film layer 36. A portion 38, and an electrode portion 39 disposed on the protective film layer 36 and around the spacer portion 38.
In the above description, the TFT layer 33 and the photoelectric conversion layer 35 are completely separated and formed as separate layers, but a part of each of the TFT layer 33 and the photoelectric conversion layer 35 is formed in a certain common layer. Is also possible.

  Here, the spacer 37 which comprises the spacer part 38 has a substantially truncated cone shape. In addition, the spacer portion 38 is formed on the uppermost portion (uppermost layer) of the photoelectric conversion element array unit 12, and the height h of each spacer 37 from the protective film layer 36 is the other portion as shown in FIG. The height h1 of the highest electrode part 39 is set higher. As a result, when the scintillator plate 11 is placed on the photoelectric conversion element array unit 12, as shown in FIG. 1, the tip of each spacer 37 comes into contact with and supports the scintillator plate 11. In FIG. 1 and FIG. 2, the drawing scale of each part is different from the actual one for easy understanding. For example, the actual height h of the spacer 37 is 4 μm or less.

  At this time, the height h of the spacer 37 corresponds to the height of the sealing space SP formed by sealing with the sealing member 13 between the scintillator plate 11 and the photoelectric conversion element array unit 12.

FIG. 3 is an explanatory schematic view of the planar arrangement of the spacer according to the first embodiment.
As the planar arrangement of the spacers 37, for example, as shown in FIG. 3, a pair of TFTs 32 and It is possible to arrange at the four corners of one pixel including the photodiode 34. The spacers 37 are not necessarily arranged at the four corners of one pixel, and are not necessarily arranged for each pixel. The sealing space SP may be arranged so that the height of the sealing space SP can be within a predetermined range at any place, and the arrangement position may or may not have periodicity.

In the actual radiation image sensor 10, an inert gas NAG such as nitrogen gas is enclosed in the sealed space SP.
The inert gas NAG such as nitrogen gas is sealed in this way to prevent the scintillator layer 24 from combining with water (H ₂ O) existing in the space and absorbing or deliquescent to deteriorate. Because.
Further, since the pressure in the sealed space SP is less than the atmospheric pressure, it is necessary to form the spacer 37 that can maintain the shape against the atmospheric pressure. Further, it is necessary to form the spacer 37 by removing the region where the photodiode 34 is formed so as not to disturb the incident light to the photodiode 34.
Here, since the structure of the photoelectric conversion element array unit 12 excluding the spacer portion 38 including the spacer 37 is the same as the conventional structure, a method for forming the spacer 37 will be described.

The spacer 37 constituting the spacer portion 38 is formed by photolithography, in which a photoresist is applied on the protective film layer 36 with a predetermined thickness, and exposure is performed using a photomask. At this time, as the photoresist material, a so-called polymer resin containing a photosensitive functional molecule is used, and as a type thereof, a negative resist whose solubility in a developing solution decreases when exposed or exposed. Any positive resist whose solubility in the developer is improved is used.
As the photoresist used in the present embodiment, any photoresist can be used as long as deterioration due to radiation (for example, X-rays) and fluorescence is not more than a predetermined level.

Further, the seal member 13 is formed of, for example, a UV (ultraviolet) curable resin such as an epoxy acrylic resin.
When the scintillator plate 11 and the photoelectric conversion element array are brought into contact with each other to face each other, a UV curable resin (special epoxy acrylic resin) serving as a seal member 13 between the four edges of the glass substrates 21 and 31 is used. Etc.), the both glass substrates 21 and 31 are cured by UV irradiation after pressure bonding, and heated (100 ° C. or higher) to enhance the adhesion. A specific material for the UV curable resin can be selected as appropriate.

Next, assembly of the radiation image sensor 10 will be described.
In this case, it is assumed that the scintillator plate 11 and the photoelectric conversion element array unit 12 have already been assembled.
First, the scintillator plate 11 and the photoelectric conversion element array unit 12 are placed on a predetermined stage in a state of facing each other in a predetermined positional relationship.

Next, in a state where the scintillator plate 11 and the photoelectric conversion element array unit 12 are fixed so as not to be displaced, four glass substrates 21 constituting the scintillator plate 11 and four glass substrates 31 constituting the photoelectric conversion element array unit 12 are provided. A UV curable / thermosetting resin is injected between two edges.
In this UV curable / thermosetting resin, a small amount for injecting an inert gas NAG such as nitrogen gas while removing air filled in the sealing space SP formed between the glass substrates 21 and 31. At least one opening is formed in each.

The gas injection device is connected to the inlet of the inert gas NAG.
Furthermore, the scintillator plate 11 placed on the stage and the photoelectric conversion element array unit 12 are completely covered with a sheet that does not allow air to pass through, and the air in the space formed by the sheet and the stage is exhausted.

Thereby, air is discharged from the small opening for removing the air filled in the sealed space SP, and the air in the sealed space SP is replaced with the inert gas NAG. At this time, by setting the pressure of the inert gas NAG after replacement to less than the atmospheric pressure, the waterproof film layer 25 of the scintillator plate 11 has the atmospheric pressure and the inert gas NAG applied to the spacer 37 of the photoelectric conversion element array unit 12. It is pressed with a pressure corresponding to the pressure difference.
In this state, the small opening for taking out air and the small opening for injecting inert gas that are opened in the UV-curing / thermosetting resin are closed with the same UV-curing / thermosetting resin, sealed, cured, and heated. To complete the sealing.

As described above, in the radiation image sensor 10 according to the first embodiment, the spacer 37 of the photoelectric conversion element array unit 12 and the waterproof film layer 25 of the scintillator plate 11 and the scintillator layer 24 are at atmospheric pressure and an inert gas. The spacer 37 is pressed with a pressure corresponding to the difference from the NAG pressure, and an appropriate number of spacers 37 are arranged at an appropriate interval, so that the scintillator plate 11 and the photoelectric conversion element array unit 12 are made to have a uniform force. The distance between the photodiode 34 constituting the photoelectric conversion element array and the scintillator plate 11 and thus the scintillator layer 24 is uniform and design in any place. The shortest separation distance can be maintained.
Therefore, a good captured image can be obtained over the entire imaging range of the radiation image sensor 10.

  Further, since the scintillator layer 24 is sealed in the sealing space SP, it can be prevented from moisture absorption or deliquescence. That is, even if the waterproof film layer 25 is not particularly formed, moisture absorption or deliquescence can be prevented and the performance can be maintained over a long period of time without injecting the inert gas NAG while being vacuum-sealed. It becomes.

  Furthermore, since the scintillator plate 11 and the photoelectric conversion element array unit 12 that are manufactured independently are combined, the scintillator plate 11 or the photoelectric conversion element array unit 12 is individually evaluated for quality, and only the non-defective products are evaluated. As a result, it is possible to reduce the scrap cost and improve the manufacturing yield compared to the conventional type in which the scintillator is directly deposited on the photoelectric conversion element array. It becomes possible to make it.

[2] Second Embodiment FIG. 4 is a cross-sectional view of a radiation image sensor according to a second embodiment.
In the first embodiment, the spacer 37 is a pixel including one set of TFT 32 and the photodiode 34 as a position that does not hinder the incidence of the fluorescence emitted from the scintillator layer 24 to the photodiode 34 that is a photoelectric conversion element. However, in the second embodiment, the spacer 37 is provided at a position corresponding to the formation position of the TFT 32 paired with each photoelectric conversion element for reading a signal from the photoelectric conversion element array. Embodiment.

Here, since the configuration of the scintillator plate 11 is the same as that of the first embodiment, the configuration of the photoelectric conversion element array unit 12A of the second embodiment will be described.
The photoelectric conversion element array unit 12A is formed on a glass substrate 31, a TFT layer 33 formed on the glass substrate 31, and a plurality of signal readout TFTs 32 arranged in an array, and laminated on the TFT layer 33. A photoelectric conversion layer 35 in which photodiodes 34 are arranged in an array, a resin protective film layer 36 covering the photoelectric conversion layer 35, and a plurality of spacers 37 are interspersed, and the spacers are stacked on the protective film layer 36. A portion 38 and an electrode portion 39 disposed on the protective film layer 36 and around the spacer portion 38.
In the above description, the TFT layer 33 and the photoelectric conversion layer 35 are completely separated and formed as separate layers, but a part of each of the TFT layer 33 and the photoelectric conversion layer 35 is formed in a certain common layer. Is also possible.

  Here, the spacer 37 which comprises the spacer part 38 has a substantially truncated cone shape. Further, the spacer portion 38 is formed on the uppermost portion (uppermost layer) of the photoelectric conversion element array unit 12A, and the height h of each spacer 37 from the protective film layer 36 is as shown in FIG. The height h1 of the highest electrode part 39 is set higher. As a result, when the scintillator plate 11 is placed on the photoelectric conversion element array unit 12A, as shown in FIG. 1, the tip of each spacer 37 comes into contact with and supports the scintillator plate 11. Also in FIG. 4, for easy understanding, the drawing scale of each part is different from the actual one, and the actual height h of the spacer 37 is, for example, 4 μm or less.

  At this time, the height h of the spacer 37 corresponds to the height of the sealing space SP formed by being sealed by the sealing member 13 between the scintillator plate 11 and the photoelectric conversion element array unit 12A.

FIG. 5 is an explanatory schematic view of the planar arrangement of the spacer according to the second embodiment.
As the planar arrangement of the spacer 37, for example, as shown in FIG. 5, a set of TFT 32 and a position where the incidence of light emitted from the scintillator layer 24 on the photodiode 34, which is a photoelectric conversion element, is not hindered. It is arranged around one pixel including the photodiode 34, and is provided at a position corresponding to the formation position of the TFT 32 paired with each photoelectric conversion element for reading a signal from the photoelectric conversion element array.
By providing the TFT 32 at a position corresponding to the formation position of the TFT 32 in this way, the pixel density is increased, and the spacer 37 can be reliably provided even when the location where the spacer 37 is provided is limited.

Note that the spacer 37 is not necessarily arranged around one pixel, and may be provided only at a position corresponding to the formation position of the TFT 32.
Further, it is not necessary to provide the TFTs 32 at positions corresponding to the formation positions of all the TFTs 32. Therefore, the arrangement positions may or may not have periodicity.

As described above, also in the radiation image sensor 10A of the second embodiment, since the appropriate number of spacers 37 are arranged at appropriate intervals, the scintillator plate 11, the photoelectric conversion element array unit 12A, The distance between the photodiode 34 constituting the photoelectric conversion element array and the scintillator plate 11 and thus the scintillator layer 24 is constant at any location. It is possible to maintain the shortest separation distance in design.
Therefore, a good captured image can be obtained over the entire imaging range of the radiation image sensor 10A.

[3] Effects of Embodiments As described above, according to each embodiment, the distance between the photodiode 34 constituting the photoelectric conversion element array and the scintillator plate 11 and thus the scintillator layer 24 is any place. In addition, it is possible to maintain a uniform and shortest separation distance in design, and to obtain a good captured image over the entire imaging range of the radiation image sensor, and to improve the yield in the production of the radioactivity image sensor. It becomes possible to make it.

[4] Modification of Embodiment In the above description, the case where the spacer 37 has a truncated cone shape has been described. However, if the scintillator plate 11 can be held at a uniform distance with respect to all the photodiodes 34. The shape may be any. For example, various shapes such as a quadrangular pyramid shape, a quadrangular prism shape, and a cylindrical shape are possible.
In the above description, the waterproof film layer 25 is provided on the scintillator layer 24. However, instead of this, a moisture-proof coat layer or a moisture-proof film layer may be provided.

10, 10A Radiation image sensor 11 Scintillator plate 12, 12A Photoelectric conversion element array unit 13 Seal member 21 Glass substrate 22 Reflective film layer 23 Protective film layer 24 Scintillator layer 25 Waterproof film layer 31 Glass substrate 32 TFT
33 TFT layer 34 Photodiode 35 Photoelectric conversion layer 36 Protective film layer 37 Spacer 38 Spacer part 39 Electrode part SP Sealing space

In order to solve the above-described problems and achieve the object, a radiation image sensor includes a scintillator plate in which a scintillator layer is provided on a substrate, and a photoelectric conversion element in which a plurality of photoelectric conversion elements constituting a photoelectric conversion element array are formed. And a spacer disposed at a predetermined position corresponding to a non-formation region of the photoelectric conversion element and abutting the scintillator plate in order to keep the distance between the layer and the scintillator plate and the photoelectric conversion element layer uniform. And a photoelectric conversion element array unit provided with a plurality of spacer layers.

In this case, the predetermined position may also be is a position that does not inhibit the incident to the photoelectric conversion elements of the fluorescence emitted from the scintillator layer.
The spacers may be periodically arranged at a predetermined interval from each other.
Furthermore, the photoelectric conversion element array unit may have a protective layer that protects the photoelectric conversion element, and the spacer may be formed on the protective layer.

Furthermore, the substrate may be a glass substrate, and the scintillator layer may be provided on the glass substrate via a reflective film.
In addition, a TFT paired with each photoelectric conversion element for reading a signal from the photoelectric conversion element array is provided, and the spacer is provided at a position corresponding to the formation position of the TFT as the predetermined position . ,

Further, in the photoelectric conversion element array unit that has a plurality of photoelectric conversion elements constituting the photoelectric conversion element array and is disposed opposite to the scintillator plate that converts incident radiation into fluorescence and constitutes a radiation image sensor, each of the scintillator plates In order to keep the distance between the scintillator plate and the photoelectric conversion element uniform, the spacers are in contact with the scintillator plate and disposed at predetermined positions corresponding to non-formation regions of the photoelectric conversion element. A plurality of spacers are provided and a plurality of spacers are provided.

In order to solve the above-described problems and achieve the object, a radiation image sensor includes a scintillator plate in which a scintillator layer is provided on a substrate, and a photoelectric conversion element in which a plurality of photoelectric conversion elements constituting a photoelectric conversion element array are formed. A layer, a protective layer that protects the photoelectric conversion element, and the scintillator plate abuts on the scintillator plate to keep the distance between the scintillator plate and the photoelectric conversion element layer uniform, and the photoelectric conversion element non-formation region Spacers arranged at predetermined positions that do not impede incidence of the fluorescence emitted from the scintillator layer corresponding to the photoelectric conversion elements, and periodically arranged at predetermined intervals, on the protective layer. And a plurality of spacer layers formed on the photoelectric conversion element array unit.

In this case, the substrate may be a glass substrate, and the scintillator layer may be provided on the glass substrate via a reflective film.
In addition, a TFT paired with each photoelectric conversion element for reading a signal from the photoelectric conversion element array is provided, and the spacer is provided at a position corresponding to the formation position of the TFT as the predetermined position. You may do it.

Further, in a photoelectric conversion element array unit having a plurality of photoelectric conversion elements constituting a photoelectric conversion element array and arranged opposite to a scintillator plate for converting incident radiation into fluorescence to constitute a radiation image sensor, the photoelectric conversion element array is A photoelectric conversion element layer on which a plurality of photoelectric conversion elements to be formed are formed; and a protective layer that protects the photoelectric conversion element, and further maintains a uniform distance between the scintillator plate and the photoelectric conversion element layer. Accordingly, the scintillator plates are in contact with each other, and are arranged at predetermined positions that do not hinder the incidence of fluorescence emitted from the scintillator layer corresponding to the non-formation region of the photoelectric conversion elements to the photoelectric conversion elements, and It is periodically arranged with a predetermined interval, contact of each of the scintillator plate A plurality of spacers uniformly maintain the distance between the scintillator plate and the photoelectric conversion element Te is provided on the protective layer.

Claims (11)

A scintillator plate provided with a scintillator layer on the substrate;
A plurality of photoelectric conversion element layers in which a plurality of photoelectric conversion elements constituting the photoelectric conversion element array are formed, and a plurality of abutting the scintillator plates to keep a uniform distance between the scintillator plate and the photoelectric conversion element layer. A photoelectric conversion element array unit provided with a spacer layer on which spacers are formed;
Radiation image sensor with   The radiation image sensor according to claim 1, wherein the spacer is provided at a position that does not hinder the incidence of fluorescence emitted from the scintillator layer on the photoelectric conversion element.   The radiation image sensor according to claim 1, wherein the spacers are periodically arranged at predetermined intervals. The photoelectric conversion element array unit has a protective layer for protecting the photoelectric conversion element,
The radiation image sensor according to claim 1, wherein the spacer is formed on the protective layer.   The radiation image sensor according to claim 1, wherein the substrate is a glass substrate, and the scintillator layer is provided on the glass substrate via a reflective film. Each photoelectric conversion element for reading a signal from the photoelectric conversion element array has a pair of TFTs, and the spacer is provided at a position corresponding to the formation position of the TFTs.
The radiation image sensor according to claim 1.   The radiation image sensor in any one of Claims 1 thru | or 6 provided with the sealing member which seals the said scintillator layer between the said board | substrate and the said photoelectric conversion element array.   The radiation image sensor according to claim 7, wherein an inert gas is filled in a space sealed by the seal member.   The radiation image sensor according to claim 8, wherein the pressure of the inert gas is set lower than atmospheric pressure.   The radiation image sensor according to claim 1, wherein the spacer is formed by photolithography. In the photoelectric conversion element array unit that has a plurality of photoelectric conversion elements constituting the photoelectric conversion element array and is arranged opposite to a scintillator plate that converts incident radiation into fluorescence to constitute a radiation image sensor,
A photoelectric conversion element array unit provided with a plurality of spacers that are in contact with the scintillator plate and maintain a uniform distance between the scintillator plate and the photoelectric conversion element.

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