JP2012201846A - Pressure-sensitive adhesive tape for semiconductor wafer processing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a pressure-sensitive adhesive tape for semiconductor wafer processing which does not contain a surfactant and an organic tin compound as curing accelerator in a pressure-sensitive adhesive layer, exhibits superior prevention performance concerning the surface adhesive deposit and the lateral surface adhesive deposit and further exhibits superior prevention performance concerning the LM (Laser Mark) adhesive deposit.SOLUTION: There is provided the tape for semiconductor wafer processing in which at least one layer of pressure-sensitive adhesive layer is laminated on a base film, wherein the pressure-sensitive adhesive layer contains a radiation curable pressure-sensitive adhesive and an organic metallic compound of a metal element of the fourth group in a periodical table of element is contained in the proportion of 0.001 to 10 wt.% with respect to the whole weight of the radiation curable pressure-sensitive adhesive.

Description

  The present invention relates to an adhesive tape for processing a semiconductor wafer used in a back grinding process, which protects the surface of a semiconductor wafer on which a circuit pattern is formed and can easily peel off a back ground semiconductor wafer after the process is completed. Used semiconductor wafer processing pressure-sensitive adhesive tape that can be used to cut a semiconductor wafer with a pattern formed into individual patterns and divide it into semiconductor elements, and a substrate in which the divided semiconductor elements are encapsulated with resin, etc. The present invention relates to an adhesive tape for processing a semiconductor wafer that can be cut and divided into individual patterns.

  In the semiconductor manufacturing process, a high-purity silicon single crystal or the like is sliced to obtain a semiconductor wafer, and then an integrated circuit is formed on the wafer surface by ion implantation, etching, or the like. Next, by grinding the back surface of the semiconductor wafer on which the integrated circuit is formed, the semiconductor wafer is made to have a desired thickness (back grinding process), and the semiconductor wafer is cut into each pattern as a semiconductor element. Dicing to be divided is performed. Thereafter, the semiconductor element divided in the dicing process is encapsulated with a resin or the like, and the substrate is cut into each pattern to manufacture a semiconductor. At this time, an adhesive tape for processing a semiconductor wafer is generally used in the back grinding process and the dicing process.

  The semiconductor wafer processing adhesive tape used in the back grinding process must prevent damage to the circuit formed on the wafer and the wafer body, and be free of adhesive on the circuit after peeling. is there. In recent years, the unevenness of the entire wafer has increased due to the miniaturization of the circuit and the change of the wafer shape, and the adhesive is likely to adhere to the circuit after peeling.

  When dicing, a pick-up system using a semiconductor wafer processing adhesive tape for fixing the wafer is generally used. In this method, a large-diameter wafer is bonded to a semiconductor wafer processing adhesive tape and diced into a chip shape in a fixed state, washed, dried, picked up, and then packaged by resin sealing. .

  In dicing, a semiconductor wafer on which a predetermined circuit pattern such as an IC is formed, and a package encapsulated with a resin are bonded with a semiconductor wafer processing adhesive tape on the back surface, and then a metal particle dispersing blade is used. A dicing process is performed to a predetermined chip size through a rotary blade such as a high-speed rotation. In this process, a part of the adhesive tape for processing a semiconductor wafer (5 to 40 μm) is cut to fully cut the wafer. A method is generally employed (see, for example, Patent Documents 1 and 2).

JP 2008-103516 A JP 2008-163276 A

  However, in the conventional adhesive tape for processing a semiconductor wafer, there is a problem in that the wafer and the package are not held and scattered (hereinafter referred to as “die fly”) due to impact or vibration during dicing, and hence no problem occurs. Such a flexible adhesive is generally used.

  However, the use of such flexible adhesives has caused problems such as adhesion of adhesives to wafers by dicing and laser marks imprinted on packages, and adhesion of adhesives to side surfaces of packages, resulting in a significant increase in yield. There is a problem that it drops. Therefore, improvement of this point has been desired.

  On the other hand, a method of adding a surfactant to the pressure-sensitive adhesive layer (Patent Documents 1 and 2) or adding an organotin compound as a curing accelerator to the pressure-sensitive adhesive layer is known. However, in the former, contamination of wafers and packages due to the bleed of surfactants has occurred, and in the latter, a new solution has been desired due to recent trends in environmental regulations related to organotin compounds originating in Europe. .

The present invention has been made in view of the above-described problems, and does not include a surfactant or an organotin compound as a curing accelerator in an adhesive layer, and occurs when an adhesive tape for processing semiconductor wafers is used. In the phenomenon that a part of the pressure-sensitive adhesive layer remains on the wafer surface and the side surface of the package (hereinafter, the former is referred to as “surface adhesive residue” and the latter is referred to as “side adhesive residue”), An object of the present invention is to provide an adhesive tape for processing a semiconductor wafer that exhibits excellent prevention performance against adhesive residue (hereinafter referred to as “LM adhesive residue”) generated in a laser mark stamped on a package.
The surface adhesive residue is a phenomenon in which a part or all of the pressure-sensitive adhesive remains on the wafer when the wafer and the semiconductor wafer processing pressure-sensitive adhesive tape are peeled off in close contact with each other.
The side adhesive residue is a phenomenon in which the adhesive is lifted by a rotating round blade when dicing the package, and this is attached to the side surface of the package.

  As a result of intensive studies to achieve the above object, the present inventors have found that an organometallic compound of a Group 4 metal element has an effect of preventing each adhesive residue. The present invention has been made based on these findings.

The present application provides the following inventions.
(1) A semiconductor wafer processing tape in which at least one pressure-sensitive adhesive layer is laminated on a base film, wherein the pressure-sensitive adhesive layer contains a radiation-curable pressure-sensitive adhesive, and is a group 4 element in the periodic table of elements. An adhesive tape for processing a semiconductor wafer, wherein an organometallic compound of a metal element is contained in a proportion of 0.001 to 10% by weight with respect to the total weight of the radiation curable adhesive.
(2) The adhesive tape for semiconductor wafer processing according to (1), wherein the organometallic compound contains at least one of titanium alkoxide, titanium chelate, zirconium alkoxide, and zirconium chelate as a main component.
(3) The adhesive tape for processing a semiconductor wafer according to (1) or (2), wherein the adhesive layer contains an isocyanate compound.
(4) The adhesive tape for semiconductor wafer processing according to any one of (1) to (3), wherein the base film contains an ethylene ionomer resin crosslinked with metal ions.

  According to the present invention, the pressure-sensitive adhesive layer does not contain a surfactant or an organotin compound as a curing accelerator, exhibits excellent prevention performance on the surface adhesive residue and the side adhesive residue, and is excellent also in the LM adhesive residue. It is possible to provide a pressure-sensitive adhesive tape for processing semiconductor wafers that exhibits high prevention performance.

Sectional drawing which shows one embodiment of the adhesive tape for semiconductor wafer processing of this invention.

  Embodiments of the present invention will be described below. FIG. 1 is a cross-sectional view showing an embodiment of an adhesive tape for processing a semiconductor wafer according to the present invention, in which an adhesive layer 3 is laminated on the surface of a base film (resin layer) 5 and the adhesive tape 1 for processing a semiconductor wafer. Is formed.

(Adhesive layer)
As one of the radiation curable pressure-sensitive adhesives constituting the pressure-sensitive adhesive layer 3, a polymer having an unsaturated hydrocarbon in a molecule derived from a (meth) acrylic acid alkyl ester monomer having an alkyl group having 2 or more carbon atoms, An organometallic compound that is cross-linked with an isocyanate compound and composed of a metal element of Group 4 of the periodic table is contained in a proportion of 0.001 to 10% by weight with respect to the total weight of the radiation curable pressure-sensitive adhesive.

  Here, (meth) acrylic acid alkyl ester monomers having 2 or more carbon atoms in the alkyl group include ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, and hexyl (meth) acrylate. , Octyl (meth) acrylate, 2-methylpropyl (meth) acrylate, 2-methylbutyl (meth) acrylate, 2-ethylbutyl (meth) acrylate, 2-methylhexyl (meth) acrylate, (meth) acrylic Examples include 2-ethylhexyl acid, 1,2-dimethylbutyl (meth) acrylate, and lauryl (meth) acrylate.

  Further, as another radiation curable pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer 3, at least two photopolymerizable carbon-carbon double bonds are formed with respect to a normal rubber-based or acrylic pressure-sensitive base resin. An organic metal compound composed of a compound having a group and containing a metal element of Group 4 of the periodic table is contained in a proportion of 0.001 to 10% by weight with respect to the total weight of the radiation curable pressure-sensitive adhesive.

  As the compound having at least two photopolymerizable carbon-carbon double bonds, any compound can be used without particular limitation as long as it is cured by irradiation with radiation to form a three-dimensional network. As the molecular weight of the compound, those having a weight average molecular weight of 20,000 or less are preferred. The molecular weight is 5,000 or less and the number of radiation-polymerizable carbon-carbon double bonds in the molecule is 2 to 6 so that the three-dimensional network of the pressure-sensitive adhesive layer can be efficiently formed by radiation irradiation. Low molecular weight compounds are preferred.

  Examples of radiation-polymerizable compounds include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene. Examples include glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, organopolysiloxane composition, commercially available oligoester acrylate, and urethane acrylate.

  The low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds may be used alone or in combination of two or more. The amount is 1 to 75% by weight based on the total weight of the radiation curable adhesive. Preferably, it is 23 to 66% by weight, more preferably 33 to 60% by weight, based on the total weight of the radiation curable pressure-sensitive adhesive. If this amount is too small, the pressure-sensitive adhesive layer will not be sufficiently three-dimensionally formed by irradiation with radiation, and it will be difficult to peel off from the adherend, and adhesive residue will easily occur. If this amount is too large, the polymerization reaction due to radiation proceeds excessively and curing shrinkage due to radiation irradiation occurs. As a result, the pressure-sensitive adhesive layer bites the surface of the adherend and becomes difficult to peel off from the adherend, so that adhesive residue is likely to occur. Moreover, when there is too much quantity of a radiation polymerizable compound, there exists a problem that it becomes difficult to hold | maintain the shape of an adhesive layer and thickness accuracy worsens.

  Further, the thickness of the pressure-sensitive adhesive layer is preferably 5 to 400 μm, more preferably 10 to 100 μm, as long as it is a back-grinding semiconductor wafer processing pressure-sensitive adhesive tape. On the other hand, if it is the adhesive tape for semiconductor wafer processing for a dicing process, it is preferable that it is 3-50 micrometers, More preferably, it is 5-20 micrometers. These numbers are derived from the viewpoints of mechanical properties, heat shrinkage, and the like necessary for an adhesive tape for processing semiconductor wafers.

(Organic metal compound)
In the above pressure-sensitive adhesive, the organometallic compound composed of a metal element of Group 4 of the periodic table is 0.001 to 10% by weight, preferably 0.005 to 10% by weight, more preferably, based on the total weight of the radiation curable pressure-sensitive adhesive. Is contained in an amount of 0.1 to 10% by weight. If the ratio of the organometallic compound composed of a metal element of Group 4 of the periodic table is too small, the crosslinking reaction of the pressure-sensitive adhesive is slowed down, and sufficient characteristics cannot be obtained, and if it is too large, the pressure-sensitive adhesive composition is mixed, This is because the pot life until it is applied to the base film is shortened, which causes a problem when the pressure-sensitive adhesive tape for processing a semiconductor wafer of the present invention is produced.

  In addition, examples of the metal element of Group 4 of the periodic table include titanium, zirconium, and hafnium. Examples of the organometallic compound composed of the metal element of Group 4 of the periodic table include alkoxides, chelates, and acylates of these metal elements. Of these, at least one of titanium alkoxide, titanium chelate, zirconium alkoxide, and zirconium chelate is preferably used as a main component. The term “main component” refers to 50% by weight or more of the total.

(Isocyanate compound)
In the present invention, the radiation curable pressure-sensitive adhesive constituting the pressure-sensitive adhesive is preferably crosslinked with an isocyanate compound.
The isocyanate compound is not particularly limited. For example, 4,4′-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4′-diphenyl ether diisocyanate, 4,4 ′-[2,2-bis (4- Aromatic isocyanate such as phenoxyphenyl) propane] diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate, Examples include lysine diisocyanate and lysine triisocyanate. Specifically, Coronate L (trade name, manufactured by Nippon Polyurethane Co., Ltd.) or the like can be used as a commercial product.

  In the present invention, the content of the isocyanate compound in the pressure-sensitive adhesive layer is preferably 0.01 to 10% by weight, more preferably 0.1 to 8% by weight, based on the total weight of the radiation-curable pressure-sensitive adhesive. . If the content ratio of the isocyanate compound is too small, the crosslinking reaction of the pressure-sensitive adhesive is slowed down, and sufficient characteristics cannot be obtained. If it is too large, the pressure-sensitive adhesive composition is mixed and applied to the base film. This is because the pot life is shortened and a trouble occurs when the pressure-sensitive adhesive tape for processing a semiconductor wafer of the present invention is produced.

(Base film)
The base film 5 used in the present invention shown in FIG. 1 is not particularly limited, and a known resin such as plastic can be used. In general, a thermoplastic plastic film is used as the base film 5. The base film 5 may be a commercially available one or may be formed by extrusion or the like. The thickness of the base film 5 is usually 30 to 300 μm, more preferably 50 to 200 μm. These numbers are derived from the viewpoints of mechanical properties, heat shrinkage, and the like necessary for an adhesive tape for processing semiconductor wafers.

  As the base film 5 of the adhesive tape for processing a semiconductor wafer for back grinding process, polyolefins such as polyethylene, polypropylene and polybutene, ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid copolymer and ethylene- ( High in ethylene copolymers such as (meth) acrylic acid ester copolymers, soft polyvinyl chloride, polyethylene terephthalate, polyethylene naphthalate, semi-rigid polyvinyl chloride, polyester, polyurethane, polyamide, polyimide, natural rubber and synthetic rubber Molecular materials are preferred. And these are used as a single layer film or each multilayer film.

The resin forming the base film 5 of the adhesive tape for processing a semiconductor wafer for dicing process is preferably in a molten state by cutting heat in order to prevent generation of thread-like cutting waste in a high temperature state. Normally, during semiconductor wafer dicing, cutting water is supplied to the cutting point on the wafer surface in order to cool the heat generated when the rotating round blade cuts the wafer and to clean the wafer surface. With the cutting heat, the boiling point of the cutting water rises to near 100 ° C. Moreover, when the cutting depth of the rotary round blade to the adhesive tape for semiconductor wafer processing for dicing process is deep, the supply of cutting water becomes insufficient, and a sufficient cooling effect can be expected only to about 20 μm of the surface of the tape thickness. However, at a depth greater than that, the temperature of the workpiece may rise to 100 ° C. or more due to insufficient supply of cutting water.
For this reason, in the conventional adhesive tape for semiconductor wafer processing for dicing processes, the resin of the base film is melted and stretched at the time of cutting, and thread-like cutting waste is generated. On the other hand, in the tape of the present invention using the resin that is melted by cutting heat, it is possible to prevent the generation of thread-like cutting waste in such a high temperature state.

Although it will not specifically limit if it is such resin, For example, resin containing the compound which has a carboxyl group as a polymer structural unit is used, and ionomer resin of an ethylene- (meth) acrylic acid copolymer etc. can be used. . Furthermore, although the reason is not clear, it is a ternary element that prevents threading of cutting waste and uses ethylene, (meth) acrylic acid, and (meth) acrylic acid alkyl ester as a structural unit of the polymer as a resin for the base film. A copolymer is more effective. As the ternary copolymer ionomer resin, there is Himiran AM 7316 (Zn) commercially available from Mitsui DuPont Polychemical Co., Ltd. In this terpolymer, the ethylene component is preferably 50 to 90% by weight, the (meth) acrylic acid component is preferably 5 to 20% by weight, and the (meth) acrylic acid alkyl ester component is preferably 5 to 30% by weight. And As the (meth) acrylic acid alkyl ester of the binary or ternary copolymer, an alkyl ester having 3 to 8 carbon atoms in the alkyl part is preferably used. Specifically, propyl (meth) acrylate, ( Meth) butyl acrylate, hexyl (meth) acrylate, octyl (meth) acrylate, 2-methylpropyl (meth) acrylate, 2-ethylpropyl (meth) acrylate, 2-methylbutyl (meth) acrylate, ( Examples include 2-ethylbutyl (meth) acrylate, 2-methylhexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, 1,2-dimethylbutyl (meth) acrylate, and the like. Further, it is more effective and preferable to use an ionomer resin in which the carboxyl group of the binary or ternary copolymer is partially neutralized with a cation as a main component. As used herein, the term “main component” refers to preferably containing 50% by weight or more in the resin. As the cation for neutralizing the carboxyl group, a metal ion or an organic amine is usually used. Among them, metal ions such as Na ⁺ , K ⁺ , Li ⁺ , Mg ²⁺ and Zn ²⁺ are mainly used. In order to prevent an adverse effect on the semiconductor wafer, an ionomer using Zn ²⁺ as a cation is preferably used. The neutralization degree of the carboxyl group with a cation is preferably 5 to 90 mol%.
As the ionomer resin, a plurality of resins having different metal ion contents and different numbers of carboxyl groups can be blended to obtain an appropriate metal ion content and number of carboxyl groups.

  In the present invention, the base film 5 is a polyolefin such as polyethylene, polypropylene and polybutene, an ethylene-vinyl acetate copolymer, an ethylene- (meth) acrylic acid copolymer in the adhesive tape for processing a semiconductor wafer for back grinding. Copolymers and ethylene copolymers such as ethylene- (meth) acrylic ester copolymers, soft polyvinyl chloride, polyethylene terephthalate, polyethylene naphthalate, semi-rigid polyvinyl chloride, polyester, polyurethane, polyamide, polyimide, natural rubber and Polymer materials such as synthetic rubber are preferable, and the adhesive tape for processing semiconductor wafers for dicing process consists of a terpolymer having ethylene, (meth) acrylic acid, and (meth) acrylic acid acrylic ester as polymer components. , Terpolymer is preferably composed mainly of ionomer resin crosslinked with a metal ion.

  EXAMPLES Hereinafter, although this invention is demonstrated further in detail based on an Example, this invention is not limited to this. In addition, the weight average molecular weight of a polymer is a polystyrene conversion value obtained by dissolving a 1% solution obtained by dissolving in tetrahydrofuran by gel permeation chromatography (trade name: 150-C ALC / GPC, manufactured by Waters). Calculated.

[Example 1] Adhesive tape A
Novatec EVA LV342 (trade name, manufactured by Nippon Polyethylene Co., Ltd.) was used as the base film (base layer), and a 150 μm-thick film (base film A) was formed by extrusion molding. Radiation curing of a polymer (75% by weight of butyl acrylate, 20% by weight of 2-hydroxyethyl acrylate and having 2-methacryloyloxyethyl isocyanate as a constituent unit and a weight average molecular weight of 600,000). 1% by weight of photopolymerizable initiator, 2% by weight of isocyanate curing agent, and ZC-150 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.), which is a zirconium chelate, are 0.001% by weight based on the total weight of the pressure-sensitive adhesive. A radiation-curable pressure-sensitive adhesive was produced by adding and mixing each so as to be, and coated on the surface of the base film A so as to have a thickness of 30 μm after drying, and a tape similar to that shown in FIG. 1 was prepared. .

[Example 2] Adhesive tape B
A tape similar to that in Example 1 except that ZC-150 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.), which is a zirconium chelate, is 0.1% by weight based on the total weight of the radiation curable pressure-sensitive adhesive. Created.

[Example 3] Adhesive tape C
A tape similar to Example 1 was prepared except that ZC-150 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.), which is a zirconium chelate, was 10% by weight with respect to the total weight of the radiation curable pressure-sensitive adhesive. .

[Example 4] Adhesive tape D
Novatec EVA LV342 (trade name, manufactured by Nippon Polyethylene Co., Ltd.) was used as the base film (base layer), and a 150 μm-thick film (base film A) was formed by extrusion molding. A radiation curable pressure-sensitive adhesive (polymer having 89% by mass of butyl acrylate, 1% by mass of methacrylic acid, and 10% by mass of 2-hydroxyethyl acrylate as a structural unit and having a weight average molecular weight of 550,000). The compound having a photopolymerizable carbon-carbon double bond is 35% by weight, the photopolymerizable initiator is 3% by weight, the isocyanate curing agent is 4% by weight, and the zirconium chelate. ZC-150 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.) was added to each other so as to be 0.1% by weight and mixed to produce a radiation curable pressure-sensitive adhesive. After drying on the surface of the base film A, the thickness was 30 μm. The same tape as shown in FIG. 1 was prepared.

[Comparative Example 1] Adhesive tape E
A tape similar to Example 1 was prepared, except that zirconium chelate was not added to the radiation curable pressure-sensitive adhesive.

[Comparative Example 2] Adhesive tape F
A tape was prepared in the same manner as in Example 1 except that ZC-150 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.), which is a zirconium chelate, was 11% by weight with respect to the total weight of the radiation curable adhesive. However, the pressure-sensitive adhesive gelled and could not be prepared.

[Example 5] Adhesive tape G
As the base film (base layer), Himiran AM-7316 (trade name, manufactured by Mitsui DuPont Polychemical Co., Ltd.) was used, and a film (base film B) having a thickness of 100 μm was prepared by extrusion molding. Radiation curing of a polymer (75% by weight of butyl acrylate, 20% by weight of 2-hydroxyethyl acrylate and having 2-methacryloyloxyethyl isocyanate as a structural unit, and a weight average molecular weight of 500,000). 5% by weight of photopolymerizable initiator, 1.5% by weight of isocyanate curing agent, and ZC-150 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.), which is a zirconium chelate, are 0.001 based on the total weight of the pressure-sensitive adhesive. A radiation-curable pressure-sensitive adhesive is produced by adding and mixing each so as to be in weight%, and is applied to the surface of the base film B so as to have a thickness of 10 μm after drying, and a tape similar to that shown in FIG. Created.

[Example 6] Adhesive tape H
A tape similar to that in Example 5 except that ZC-150 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.), which is a zirconium chelate, is 0.1% by weight with respect to the total weight of the radiation curable adhesive. Created.

[Example 7] Adhesive tape I
A tape similar to that of Example 5 was prepared except that ZC-150 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.), which is a zirconium chelate, was 10% by weight with respect to the total weight of the radiation curable adhesive. .

[Example 8] Adhesive tape J
As the base film (base layer), Himiran AM-7316 (trade name, manufactured by Mitsui DuPont Polychemical Co., Ltd.) was used, and a film (base film B) having a thickness of 100 μm was prepared by extrusion molding. A radiation curable pressure-sensitive adhesive (polymer having 89% by mass of butyl acrylate, 1% by mass of methacrylic acid, and 10% by mass of 2-hydroxyethyl acrylate as a structural unit and having a weight average molecular weight of 530,000). The compound having a photopolymerizable carbon-carbon double bond is 40% by weight, the photopolymerization initiator is 6% by weight, the isocyanate curing agent is 3% by weight, and the zirconium chelate. ZC-150 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.) was added to each other so as to be 0.1% by weight and mixed to produce a radiation curable pressure-sensitive adhesive. After drying on the surface of the base film B, the thickness was 10 μm. The same tape as shown in FIG. 1 was prepared.

[Comparative Example 3] Adhesive tape K
A tape similar to that of Example 5 was prepared, except that zirconium chelate was not added to the radiation curable adhesive.

[Comparative Example 4] Adhesive tape L
A tape was prepared in the same manner as in Example 5 except that ZC-150 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.), which is a zirconium chelate, was 11% by weight based on the total weight of the radiation curable adhesive. However, the pressure-sensitive adhesive gelled and could not be prepared.

[Example 9] Adhesive tape M
Implemented except that ZA-45 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.), which is a zirconium alkoxide, is mixed in an amount of 0.1% by weight with respect to the total weight of the radiation curable pressure-sensitive adhesive instead of zirconium chelate. A tape was prepared as in Example 2.

[Example 10] Adhesive tape N
Implemented except that TC-750 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.), which is a titanium chelate, is mixed in an amount of 0.1% by weight based on the total weight of the radiation curable pressure-sensitive adhesive instead of zirconium chelate. A tape was prepared as in Example 2.

[Example 11] Adhesive tape O
Implemented except that the titanium alkoxide TA-10 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.) is mixed in an amount of 0.1% by weight based on the total weight of the radiation curable pressure-sensitive adhesive instead of zirconium chelate. A tape was prepared as in Example 2.

[Example 12] Adhesive tape P
Implemented except that ZA-45 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.), which is a zirconium alkoxide, is mixed in an amount of 0.1% by weight with respect to the total weight of the radiation curable pressure-sensitive adhesive instead of zirconium chelate. A tape was prepared as in Example 6.

[Example 13] Adhesive tape Q
Implemented except that TC-750 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.), which is a titanium chelate, is mixed in an amount of 0.1% by weight based on the total weight of the radiation curable pressure-sensitive adhesive instead of zirconium chelate. A tape was prepared as in Example 6.

[Example 14] Adhesive tape R
Implemented except that the titanium alkoxide TA-10 (trade name, manufactured by Matsumoto Fine Chemical Co., Ltd.) is mixed in an amount of 0.1% by weight based on the total weight of the radiation curable pressure-sensitive adhesive instead of zirconium chelate. A tape was prepared as in Example 6.

[Test example]
(Evaluation of adhesive residue on the surface of adhesive tape for processing semiconductor wafers for back grinding)
A silicon wafer is bonded to the adhesive tape for semiconductor wafer processing of Examples 1, 2, 3, 4, 9, 10, 11, and Comparative Examples 1 and 2, a back grinding operation is performed, ultraviolet rays are irradiated, and the adhesive tape is attached. It peeled. The number of remaining adhesive paste on the peeled silicon wafer was evaluated.

(Evaluation of adhesive residue on the side of semiconductor wafer processing tape for dicing process)
Laser marks with a length of 10.0 mm, a width of 10.0 mm, and a thickness of 1.1 mm are imprinted on the adhesive tapes for processing semiconductor wafers of Examples 5, 6, 7, 8, 12, 13, 14, and Comparative Examples 3 and 4. After pasting the epoxy resin package, a dicing machine (manufactured by DISCO, product name: DFD6340) and a dicing blade (manufactured by DISCO, product name: SD320N100M42) are used at a rotation speed of 40000 rpm and a cutting speed of 50 mm / sec. Dicing was performed to 1.0 mm × 1.0 mm.
A pick-up operation using a die picker apparatus (trade name: CAP-300II, manufactured by Canon Machinery Co., Ltd.) was performed on 100 diced package chips, and the number of side adhesive residues generated on the obtained package chips was evaluated.

(Laser mark adhesive residue evaluation: wafer)
After bonding a # 2000 polished silicon wafer with a laser mark imprinted on the semiconductor wafer processing adhesive tapes of Examples 5, 6, 7, 8, 12, 13, 14, and Comparative Examples 3 and 4, a dicing machine ( Using a disco product, trade name: DFD6340), a dicing blade (manufactured by Disco, trade name: NBC-ZH205O 27HEDD) was used to dice into 10.0 mm × 10.0 mm at a rotation speed of 40000 rpm and a cutting speed of 50 mm / sec.
A pick-up operation using a die picker apparatus (trade name: CAP-300II, manufactured by Canon Machinery Co., Ltd.) was performed on 50 diced silicon wafers, and the number of remaining laser mark adhesives on the obtained silicon wafers was evaluated.

(Laser mark adhesive residue evaluation: package)
Laser marks with a length of 10.0 mm, a width of 10.0 mm, and a thickness of 1.1 mm are imprinted on the adhesive tapes for processing semiconductor wafers of Examples 5, 6, 7, 8, 12, 13, 14, and Comparative Examples 3 and 4. After pasting the epoxy resin package, a dicing machine (manufactured by DISCO, product name: DFD6340) and a dicing blade (manufactured by DISCO, product name: SD320N100M42) are used at a rotation speed of 40000 rpm and a cutting speed of 50 mm / sec. Dicing was performed to 1.0 mm × 1.0 mm.
A pick-up operation was performed on 100 diced package chips using a die picker apparatus (trade name: CAP-300II, manufactured by Canon Machinery Co., Ltd.), and the number of remaining laser mark pastes on the obtained package chips was evaluated.

  Each test result was described in Tables 1-4. In addition, the evaluation of the adhesive residue on the surface of the adhesive tape for processing semiconductor wafers for the back grinding process and the evaluation of the adhesive residue on the side surface of the adhesive tape for processing semiconductor wafers for the dicing process was excellent. Is indicated by ○, and the defective one is indicated by ×. In addition, the availability of tape production was also described.

  As can be seen from Examples 1 to 4 in Table 1, it was shown that by adding 0.001 to 10% by weight of zirconium chelate, the number of remaining surface adhesives was improved. On the other hand, in Comparative Example 1 in which no zirconium chelate was added, the surface adhesive residue at the time of back grinding was poor. Moreover, about the comparative example 2 which added 11 weight% of zirconium chelate, the pot life of the adhesive became short and manufacture of the adhesive tape was impossible.

  As can be seen from Examples 5 to 8 in Table 2, it was shown that by adding 0.001 to 10% by weight of zirconium chelate, the number of side surface adhesive residues and the laser mark adhesive residue were improved. On the other hand, in Comparative Example 3 in which no zirconium chelate was added, the side surface adhesive residue and the LM adhesive residue were poor. Moreover, about the comparative example 4 which added 11 weight% of zirconium chelate, the pot life of the adhesive became short and manufacture of the adhesive tape was impossible.

  As can be seen from Tables 3 and 4, it was shown that by adding zirconium chelate, zirconium alkoxide, titanium chelate and titanium alkoxide, the surface adhesive residue, the number of side surface adhesive residues, and the laser mark adhesive residue were improved.

  Further, as shown in Examples 4 and 8, zirconium chelate is also added to a radiation-curable pressure-sensitive adhesive in which a compound having at least two photopolymerizable carbon-carbon double bonds is added to a pressure-sensitive base resin. As a result, various adhesive residues could be prevented.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the technical idea disclosed in the present application, and these are naturally within the technical scope of the present invention. Understood.

1 .... Adhesive tape for semiconductor wafer processing 3 .... Adhesive layer 5 .... Base film

Claims (4)

A semiconductor wafer processing tape in which at least one adhesive layer is laminated on a base film,
The pressure-sensitive adhesive layer contains a radiation curable pressure-sensitive adhesive,
An organic metal compound of a Group 4 metal element in the periodic table of elements is contained in a proportion of 0.001 to 10% by weight with respect to the total weight of the radiation-curable pressure-sensitive adhesive. Adhesive tape for wafer processing.   The pressure-sensitive adhesive tape for processing a semiconductor wafer according to claim 1, wherein the organometallic compound contains at least one of titanium alkoxide, titanium chelate, zirconium alkoxide, and zirconium chelate as a main component.   The pressure-sensitive adhesive layer for semiconductor wafer processing according to claim 1 or 2, wherein the pressure-sensitive adhesive layer contains an isocyanate compound.   The pressure-sensitive adhesive tape for processing a semiconductor wafer according to any one of claims 1 to 3, wherein the base film contains an ethylene ionomer resin crosslinked with metal ions.

Images