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JP2012134200A - Semiconductor heat radiator - Google Patents

Semiconductor heat radiator Download PDF

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JP2012134200A
JP2012134200A JP2010282685A JP2010282685A JP2012134200A JP 2012134200 A JP2012134200 A JP 2012134200A JP 2010282685 A JP2010282685 A JP 2010282685A JP 2010282685 A JP2010282685 A JP 2010282685A JP 2012134200 A JP2012134200 A JP 2012134200A
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semiconductor
heat radiating
heat
heat dissipation
semiconductor element
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JP5787435B2 (en
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Izumi Kumada
泉実 熊田
Akito Joboji
明人 上坊寺
Yoshiki Ishikawa
佳樹 石川
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Cosel Co Ltd
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Cosel Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide an inexpensively manufactured semiconductor heat radiator for efficiently and steadily radiating heat generated by a semiconductor element.SOLUTION: A semiconductor heat radiator 10 is attached to a semiconductor element 1 including a housing part 3 housing a semiconductor 2, a stationary part 5 having a through hole 4, a first heat radiation surface 8 formed on the same side as the housing part 3 and the stationary part 5, and a second heat radiation surface 9 formed on the side opposite to the first heat radiation surface 8 of the housing 3. The semiconductor heat radiator 10 comprises a first heat radiation member 11 contacting the first heat radiation surface 8, a second heat radiation member 21 elastically contacting the second heat radiation surface 9 without contacting the stationary part 5 using a bonded part 25 with the first heat radiation member 11 as a supporting point, and a fixing member 28 penetrating the through hole 4 to be engaged with the first heat radiation member 11 and the second heat radiation member 21 for holding the semiconductor element 1 by the first heat radiation member 11 and the second heat radiation member 21.

Description

本発明は、パワートランジスタ等の発熱量の大きな半導体素子に装着する放熱装置に関し、特に、半導体素子の発熱を効率的に安定して放熱するための放熱部材の取り付け構造を特徴とする半導体放熱装置に関する。
The present invention relates to a heat radiating device mounted on a semiconductor element having a large calorific value, such as a power transistor, and in particular, a semiconductor heat radiating device characterized by a mounting structure of a heat radiating member for efficiently and stably radiating heat generated by the semiconductor element. About.

従来、パワートランジスタに代表される電力用の半導体素子は、プラスチック製のパッケージ内部に放熱効果のある金属板を設け、この金属板に半導体を載置してリード端子に接続しているが、通電による半導体の発熱を効率よく放熱させるために、パッケージ外部に放熱板等の放熱装置(ヒートシンク)を装着して使用するのが一般的である。   Conventionally, a power semiconductor element represented by a power transistor has been provided with a metal plate having a heat dissipation effect inside a plastic package, and a semiconductor is placed on the metal plate and connected to a lead terminal. In order to efficiently dissipate the heat generated by the semiconductor, it is common to use a heat radiating device (heat sink) such as a heat radiating plate mounted outside the package.

このような半導体素子は、図8に示す半導体素子1のように、発熱体である半導体2を収納している収納部3と、ネジ止め用の貫通孔4を有する固定部5とで構成されたパッケージ6から、複数のリード端子7が引き出された構造となっており、パッケージ6の背面8が放熱面として形成され、一般的には、放熱装置にパッケージ6の背面8を接触させ、貫通孔4にネジを通して締結し圧着させている。   Such a semiconductor element includes a housing part 3 that houses a semiconductor 2 that is a heating element and a fixing part 5 that has a through hole 4 for screwing, as in the semiconductor element 1 shown in FIG. The package 6 has a structure in which a plurality of lead terminals 7 are drawn out, and the back surface 8 of the package 6 is formed as a heat radiating surface. The holes 4 are fastened and crimped by screws.

このように半導体素子を放熱装置にネジ止めする場合、締め付けトルクが適正値より大きいとパッケージが変形し、また、締め付けトルクが適正値より小さいとパッケージと放熱装置との密着性が悪くなり、所定の放熱性能を得ることができないという問題が発生する。従って、配線基板の実装工程においては、半導体素子を放熱装置に取り付ける際のネジの締め付けトルクを厳密に管理しなければならない。
When the semiconductor element is screwed to the heat radiating device in this way, the package is deformed if the tightening torque is larger than the appropriate value, and if the tightening torque is smaller than the proper value, the adhesion between the package and the heat radiating device is deteriorated. This causes a problem that the heat dissipation performance cannot be obtained. Therefore, in the wiring board mounting process, it is necessary to strictly manage the tightening torque of the screws when the semiconductor element is attached to the heat dissipation device.

特開2005−183644号公報JP 2005-183644 A

しかしながら、現実には、ネジの不適切な締め付けトルクによる放熱効率の低下や、ネジの過大な締め付けトルクによる半導体素子の破損等のトラブルが頻繁に発生し、特に、半導体素子を交換するような修理時においては、半導体素子を放熱装置に取り付ける際のネジの締め付けトルクが管理されない場合が多い。   However, in reality, troubles such as a decrease in heat dissipation efficiency due to inappropriate tightening torque of screws and damage to semiconductor elements due to excessive tightening torque of screws frequently occur, especially repairs that replace semiconductor elements. In some cases, the tightening torque of the screw when the semiconductor element is attached to the heat dissipation device is often not managed.

図9は、従来の半導体放熱装置の実施例及びその問題点を示す断面図であり、図9(A)は、放熱板に半導体素子を取り付けて配線基板に実装した状態、図9(B)は、ネジの不適切な締め付けトルクによって、半導体素子が浮き上がった状態を示している。   FIG. 9 is a cross-sectional view showing an example of a conventional semiconductor heat dissipation device and its problems. FIG. 9A shows a state in which a semiconductor element is mounted on a heat sink and mounted on a wiring board. Shows a state where the semiconductor element is lifted by an inappropriate tightening torque of the screw.

図9(A)(B)において、半導体放熱装置130の放熱板131は、半導体素子1をネジ138によって取り付けた状態で、配線基板140にネジ142で取り付けてあり、また、半導体素子1のリード端子7は、配線基板140のスルーホール141に挿入されハンダ付けされている。   9A and 9B, the heat radiating plate 131 of the semiconductor heat radiating device 130 is attached to the wiring board 140 with screws 142 in a state in which the semiconductor element 1 is attached with screws 138. The terminal 7 is inserted into the through hole 141 of the wiring board 140 and soldered.

図9(A)では、ネジ138を適切なトルクで締め付けているため、半導体素子1の背面(放熱面)8は、放熱板131に密着しているが、図9(B)では、ネジ138の締め付けトルクが過大であるため、半導体素子1の固定部5が変形し、背面8が放熱板131の接触面133から浮き上がっている。このような状態では、半導体放熱装置130は、所定の放熱性能を得ることができず、また、固定部5にクラックが発生しやすくなる。   In FIG. 9A, since the screw 138 is tightened with an appropriate torque, the back surface (heat radiating surface) 8 of the semiconductor element 1 is in close contact with the heat radiating plate 131, but in FIG. Therefore, the fixing portion 5 of the semiconductor element 1 is deformed, and the back surface 8 is lifted from the contact surface 133 of the heat sink 131. In such a state, the semiconductor heat dissipation device 130 cannot obtain a predetermined heat dissipation performance, and cracks are likely to occur in the fixing portion 5.

すなわち、図9に示すような、従来の半導体放熱装置においては、半導体素子を取り付ける際のネジの不適切な締め付けトルクによって、放熱効率の低下や半導体素子の破損が発生するという問題がある。   That is, in the conventional semiconductor heat dissipation device as shown in FIG. 9, there is a problem in that the heat dissipation efficiency is reduced and the semiconductor element is damaged due to an inappropriate tightening torque of the screw when the semiconductor element is attached.

この問題を解決するために、例えば、特許文献1の技術が提案されている。特許文献1に記載された放熱装置(電気回路モジュール)は、半導体素子を放熱部材に直接ネジ止めするのではなく、放熱部材にネジ止めした固定部材が、半導体素子を放熱部材に圧着して固定する構成となっている。   In order to solve this problem, for example, the technique of Patent Document 1 has been proposed. The heat dissipating device (electric circuit module) described in Patent Document 1 does not directly screw the semiconductor element to the heat dissipating member, but the fixing member screwed to the heat dissipating member presses and fixes the semiconductor element to the heat dissipating member. It is the composition to do.

しかし、この構成においても、後で詳細に説明するように、半導体素子の形状的なばらつきによる放熱部材への圧着不足で、半導体素子と放熱部材との熱抵抗が増加したり半導体素子の固定が不十分であったり等の問題が発生する。また、このような固定部材は、構造が複雑であるため高価であり、更に、放熱装置を小型化する弊害にもなっていた。   However, even in this configuration, as will be described in detail later, the thermal resistance between the semiconductor element and the heat radiating member increases due to insufficient crimping to the heat radiating member due to variations in the shape of the semiconductor element, and the semiconductor element is not fixed. Problems such as insufficiency occur. In addition, such a fixing member is expensive because of its complicated structure, and has also been a detrimental effect of downsizing the heat dissipation device.

本発明は、上記の問題点を解決するためになされたものであり、半導体素子の発熱を効率的に安定して放熱するための半導体放熱装置を安価に製造して提供することを目的とする。
The present invention has been made to solve the above problems, and an object of the present invention is to inexpensively manufacture and provide a semiconductor heat dissipation device for efficiently and stably dissipating heat generated by a semiconductor element. .

この目的を達成するため本発明は次のように構成する。まず本発明は、半導体を収納した収納部及び貫通孔を有する固定部で構成され、収納部及び固定部の同一側に形成される第1放熱面と、収納部の第1放熱面の反対側に形成される第2放熱面とを有する半導体素子に装着される半導体放熱装置を対象とする。   In order to achieve this object, the present invention is configured as follows. First, the present invention is composed of a housing portion that contains a semiconductor and a fixed portion having a through hole, and a first heat radiating surface formed on the same side of the housing portion and the fixing portion, and a side opposite to the first heat radiating surface of the housing portion. A semiconductor heat dissipation device mounted on a semiconductor element having a second heat dissipation surface formed on the semiconductor device.

このような半導体放熱装置において、本発明にあっては、半導体素子の第1放熱面に接触する第1放熱部材と、第1放熱部材との接合部を支点として半導体素子の固定部に接触せずに第2放熱面に弾性的に接触する第2放熱部材と、半導体素子の貫通孔に挿通して第1放熱部材及び第2放熱部材に係合し、第1放熱部材と第2放熱部材とで半導体素子を挟持させる固定部材とを備えたことを特徴とする。   In such a semiconductor heat radiating device, in the present invention, the first heat radiating member that contacts the first heat radiating surface of the semiconductor element and the joint between the first heat radiating member are contacted to the fixing portion of the semiconductor element. A second heat radiating member that elastically contacts the second heat radiating surface, and a first heat radiating member and a second heat radiating member inserted through the through hole of the semiconductor element and engaged with the first heat radiating member and the second heat radiating member. And a fixing member for sandwiching the semiconductor element.

ここで、第1放熱部材は、半導体素子の第1放熱面の実質的に全面に接触する第1接触面と、固定部材を挿通する第1取付孔とを有し、第2放熱部材は、半導体素子の第2放熱面の一部又は全面に接触する第2接触面と、固定部材を挿通する第2取付孔とを有し、固定部材は、第1取付孔、貫通孔、第2取付孔に挿通し、接合部を支点、第2取付孔を力点、第2接触面を作用点として第2放熱面を押圧する。更に、第1放熱部材は、配線基板に固定する基板取付部を有する。   Here, the first heat dissipating member has a first contact surface that contacts substantially the entire first heat dissipating surface of the semiconductor element, and a first mounting hole through which the fixing member is inserted. A second contact surface that contacts a part or the entire surface of the second heat dissipation surface of the semiconductor element and a second mounting hole through which the fixing member is inserted. The fixing member includes the first mounting hole, the through hole, and the second mounting. The second heat radiating surface is pressed through the hole, with the joint portion as a fulcrum, the second mounting hole as a force point, and the second contact surface as an action point. Furthermore, the first heat radiating member has a board mounting portion that is fixed to the wiring board.

また、この半導体放熱装置は、第1接触面に複数の半導体素子を配線基板に実装する方向に並べて配置し、第1放熱部材と第2放熱部材とでこの複数の半導体素子を挟持して固定する構成としてもよい。   In addition, the semiconductor heat dissipation device is arranged by arranging a plurality of semiconductor elements on the first contact surface in the mounting direction on the wiring board, and sandwiching and fixing the plurality of semiconductor elements between the first heat dissipation member and the second heat dissipation member. It is good also as composition to do.

このように、複数の半導体素子を挟持して固定する構成の場合、第2放熱部材は、複数の半導体素子の配置位置間にスリットを形成し、スリットにより分離された第2接触面の各々が、複数の半導体素子の第2放熱面に個別に接触する。   Thus, in the case of a configuration in which a plurality of semiconductor elements are sandwiched and fixed, the second heat dissipation member forms slits between the arrangement positions of the plurality of semiconductor elements, and each of the second contact surfaces separated by the slits is , Individually contacting the second heat radiation surfaces of the plurality of semiconductor elements.

ここで、第1放熱部材及び第2放熱部材の少なくとも何れか一方は、第1放熱部材の基板取付部を配線基板に固定した状態で、配線基板とは反対側に、配線基板の略平行方向に屈曲した形状の屈曲部を有する。   Here, at least one of the first heat radiating member and the second heat radiating member is in a substantially parallel direction of the wiring board on the side opposite to the wiring board in a state where the board mounting portion of the first heat radiating member is fixed to the wiring board. A bent portion having a bent shape.

また、第1放熱部材及び第2放熱部材は、板金加工したアルミニウム又はアルミニウム合金であり、更に、第2放熱部材は、第1放熱部材より熱伝導率が高い材質とする。
The first heat radiating member and the second heat radiating member are made of aluminum or aluminum alloy processed by sheet metal, and the second heat radiating member is made of a material having a higher thermal conductivity than the first heat radiating member.

本発明によれば、半導体素子を放熱装置に取り付ける際に、半導体素子を2枚の放熱板で弾性的に挟持して固定するようにしたことで、従来の放熱板に半導体素子の固定部を直接ネジ止めする方法で問題になる、ネジの不適切な締め付けトルクによる半導体素子の浮き上がりや破損等を防止できる。   According to the present invention, when the semiconductor element is attached to the heat radiating device, the semiconductor element is elastically sandwiched and fixed between the two heat radiating plates, so that the fixing portion of the semiconductor element is attached to the conventional heat radiating plate. It is possible to prevent the semiconductor element from being lifted or damaged due to an inappropriate tightening torque of the screw, which is a problem with the direct screwing method.

また、本発明によれば、半導体素子を弾性的に挟持することで、従来の固定治具を用いて半導体素子を放熱板に固定する方法で問題になる、半導体素子の形状的なばらつきによる放熱板への圧着不足で、半導体素子と放熱板との熱抵抗が増加したり半導体素子の固定が不十分であったり等のトラブルを防止することができる。   In addition, according to the present invention, heat dissipation due to variation in the shape of the semiconductor element, which is a problem in the method of fixing the semiconductor element to the heat sink using a conventional fixing jig by elastically holding the semiconductor element, Insufficient pressure bonding to the plate can prevent troubles such as an increase in the thermal resistance between the semiconductor element and the heat radiating plate and insufficient fixation of the semiconductor element.

また、本発明によれば、2枚の放熱板を組み合わせて使用することで、半導体素子の両面から効率的に放熱させることができ、従来の1枚の放熱板で半導体素子の片面から放熱させる半導体放熱装置に比べて放熱効率が向上する。   In addition, according to the present invention, by using two heat sinks in combination, heat can be efficiently radiated from both sides of the semiconductor element, and heat can be radiated from one side of the semiconductor element by one conventional heat radiating board. The heat dissipation efficiency is improved as compared with the semiconductor heat dissipation device.

更に、本発明によれば、2枚の放熱板としてアルミニウム材を板金加工したものを使用することで、複雑な形状にすることなく表面積を増やすことができ、所定の放熱性能を備えた半導体放熱装置を安価に製造することができる。
Furthermore, according to the present invention, the surface area can be increased without using a complicated shape by using a sheet metal processed aluminum material as the two heat radiation plates, and the semiconductor heat radiation with a predetermined heat radiation performance can be achieved. The device can be manufactured at low cost.

本発明による半導体放熱装置の実施形態を示す断面図Sectional drawing which shows embodiment of the semiconductor thermal radiation apparatus by this invention 図1に示す半導体素子を複数の半導体素子に適用した場合の外観図1 is an external view when the semiconductor element shown in FIG. 1 is applied to a plurality of semiconductor elements. 図2に示す半導体素子の分解図2 is an exploded view of the semiconductor device shown in FIG. 従来の半導体放熱装置の実施例と図1に示す実施形態とを対比する断面図Sectional drawing which compares the Example of the conventional semiconductor heat dissipation apparatus and embodiment shown in FIG. 本発明による半導体放熱装置の他の実施形態を示す説明図Explanatory drawing which shows other embodiment of the semiconductor thermal radiation apparatus by this invention. 本発明による半導体放熱装置の他の実施形態を示す説明図Explanatory drawing which shows other embodiment of the semiconductor thermal radiation apparatus by this invention. 本発明による半導体放熱装置の他の実施形態を示す断面図Sectional drawing which shows other embodiment of the semiconductor thermal radiation apparatus by this invention 本発明が対象とするパワートランジスタに代表される半導体素子を示す外観図External view showing a semiconductor element typified by a power transistor to which the present invention is applied 従来の半導体放熱装置の実施例及びその問題点を示す断面図Sectional drawing which shows the Example of the conventional semiconductor thermal radiation apparatus, and its problem

図1は、本発明による半導体放熱装置の実施形態を示す断面図であり、上記の半導体素子に対して本発明を適用した場合の半導体放熱装置について説明する。   FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor heat radiating device according to the present invention, and a semiconductor heat radiating device when the present invention is applied to the above-described semiconductor element will be described.

図1に示すように、半導体放熱装置10は、熱伝導性に優れたアルミニウムやアルミニウム合金等の板材を板金加工した、第1放熱板(第1放熱部材)11と第2放熱板21(第2放熱部材)、及びネジ(固定部材)28で構成されている。   As shown in FIG. 1, the semiconductor heat radiating device 10 includes a first heat radiating plate (first heat radiating member) 11 and a second heat radiating plate 21 (the first heat radiating member) obtained by sheet-metal processing a plate material such as aluminum or aluminum alloy having excellent thermal conductivity. 2 heat dissipating member) and a screw (fixing member) 28.

第1放熱板11は、半導体素子1の背面8(第1放熱面)に接触する第1接触面13と第1取付孔14を有する半導体取付部12、及び配線基板140に固定する基板取付部15を形成し、第2放熱板21は、半導体素子1の表面9(第2放熱面)に接触する第2接触面23と第2取付孔24を有する押圧部22、第1放熱板11に当接する接合部25、屈曲部26、及び段曲部27を形成している。   The first heat radiating plate 11 includes a semiconductor mounting portion 12 having a first contact surface 13 and a first mounting hole 14 that are in contact with the back surface 8 (first heat radiating surface) of the semiconductor element 1, and a substrate mounting portion that is fixed to the wiring board 140. 15, the second heat radiating plate 21 is formed on the first heat radiating plate 11, the second contact surface 23 that contacts the surface 9 (second heat radiating surface) of the semiconductor element 1, and the pressing portion 22 having the second mounting hole 24. A contact portion 25, a bent portion 26, and a stepped portion 27 are formed.

第2放熱板21の段曲部27は、半導体素子1の背面8から表面9までの厚さに実質的に等しい段差を有し、屈曲部26は、半導体放熱装置10の基板取付部15を配線基板140に固定した状態で、接合部25から配線基板140の略平行方向に屈曲した形状となっている。   The stepped portion 27 of the second heat radiating plate 21 has a step substantially equal to the thickness from the back surface 8 to the surface 9 of the semiconductor element 1, and the bent portion 26 forms the substrate mounting portion 15 of the semiconductor heat radiating device 10. In a state of being fixed to the wiring board 140, the wiring board 140 is bent in the substantially parallel direction of the wiring board 140.

屈曲部26は、半導体放熱装置10が所定の放熱性能を発揮するのに必要な第2放熱板21の表面積を確保しながら、半導体放熱装置10の配線基板140からの高さを所定の寸法内に抑えるために形成しており、その形状は図1に示す形態に限らず、また、第1放熱板11側に設けてもよく、更に、第1放熱板11と第2放熱板21の両方に設けることも可能である。   The bent portion 26 keeps the height of the semiconductor heat radiating device 10 from the wiring board 140 within a predetermined dimension while ensuring the surface area of the second heat radiating plate 21 necessary for the semiconductor heat radiating device 10 to exhibit a predetermined heat radiating performance. The shape is not limited to the form shown in FIG. 1 and may be provided on the first heat radiating plate 11 side. Furthermore, both the first heat radiating plate 11 and the second heat radiating plate 21 are provided. It is also possible to provide it.

第1放熱板11の第1取付孔14は、ネジ28に螺合する雌ネジとなっており、第2放熱板21の第2取付孔24は、内径がネジ28の外径よりも大径となっている。また、ネジ28は、外径が半導体素子1の貫通孔4の内径よりも小径となっている。   The first mounting hole 14 of the first heat radiating plate 11 is a female screw screwed into the screw 28, and the inner diameter of the second mounting hole 24 of the second heat radiating plate 21 is larger than the outer diameter of the screw 28. It has become. The screw 28 has an outer diameter smaller than the inner diameter of the through hole 4 of the semiconductor element 1.

なお、第1取付孔14の雌ネジは、半導体放熱装置10を組み立てる以前に、予めネジ切り作業を施して形成する方法と、予めネジ切りを行わずにネジ28としてセルフタップネジを使用し、ネジ込み時に形成する方法の何れでも構わない。   The female screw of the first mounting hole 14 is formed by performing a threading operation in advance before the semiconductor heat radiating device 10 is assembled, and a self-tapping screw is used as the screw 28 without performing threading in advance. Any method of forming at the time of embedding may be used.

半導体放熱装置10に半導体素子1を取り付けるには、第1放熱板11、半導体素子1、第2放熱板21を各々の第1取付孔14、貫通孔4、第2取付孔24の位置が概ね一致するように重ね合わせ、第1放熱板11の第1接触面13と半導体素子1の背面8、第2放熱板21の第2接触面23と半導体素子1の表面9が接触した状態で、ネジ28を第2取付孔24、貫通孔4に通し、第1取付孔14にネジ止めする。   In order to attach the semiconductor element 1 to the semiconductor heat radiating device 10, the first heat radiating plate 11, the semiconductor element 1, and the second heat radiating plate 21 are generally located at the positions of the first mounting hole 14, the through hole 4, and the second mounting hole 24. In a state where the first contact surface 13 of the first heat radiating plate 11 and the back surface 8 of the semiconductor element 1, the second contact surface 23 of the second heat radiating plate 21 and the surface 9 of the semiconductor element 1 are in contact with each other, The screw 28 is passed through the second mounting hole 24 and the through hole 4 and fixed to the first mounting hole 14.

ここで、半導体素子1の固定部5と第2放熱板21の押圧部22との間には空間があるため、ネジ28を締め込むことで、第2放熱板21の接合部25を支点、第2取付孔24とネジ28の頭部との係合部を力点、第2接触面23を作用点として、第2放熱板21の弾性によって押圧部22が半導体素子1の収納部3を押圧する。   Here, since there is a space between the fixing portion 5 of the semiconductor element 1 and the pressing portion 22 of the second heat radiating plate 21, by tightening the screw 28, the joint portion 25 of the second heat radiating plate 21 is a fulcrum, The pressing portion 22 presses the housing portion 3 of the semiconductor element 1 by the elasticity of the second heat radiating plate 21 with the engaging portion between the second mounting hole 24 and the head portion of the screw 28 as a power point and the second contact surface 23 as an operating point. To do.

半導体素子1は、この押圧部22の押圧によって、第1放熱板11と第2放熱板21とで挟持されるように保持される。その後、半導体素子1のリード端子7を配線基板140のスルーホール141に通しておいて、第1放熱板1の基板取付部15をネジ142で配線基板140に固定し、リード端子7をハンダ付けすることで、半導体素子1と半導体放熱装置10は、配線基板140に固定される。   The semiconductor element 1 is held so as to be sandwiched between the first heat radiating plate 11 and the second heat radiating plate 21 by the pressing of the pressing portion 22. Thereafter, the lead terminal 7 of the semiconductor element 1 is passed through the through hole 141 of the wiring board 140, the board mounting portion 15 of the first heat radiating plate 1 is fixed to the wiring board 140 with screws 142, and the lead terminal 7 is soldered. As a result, the semiconductor element 1 and the semiconductor heat dissipation device 10 are fixed to the wiring board 140.

半導体素子1の背面8と第1放熱板11の第1接触面13、半導体素子1の表面9と第2放熱板21の第2接触面23が圧着しているため、半導体素子1は、通電された際の半導体2の発熱を第1放熱板11を介して放熱するだけではなく、第2放熱板21からも放熱することができる。   Since the back surface 8 of the semiconductor element 1 and the first contact surface 13 of the first heat radiating plate 11 and the surface 9 of the semiconductor element 1 and the second contact surface 23 of the second heat radiating plate 21 are pressure-bonded, the semiconductor element 1 The generated heat of the semiconductor 2 can be radiated not only from the first heat radiating plate 11 but also from the second heat radiating plate 21.

また、半導体素子1が発熱した際の表面9の温度は、通常、背面8の温度より低い。このように熱勾配が背面9よりも小さな状態で、表面9と同様に放熱させるためには、第2放熱板21を第1放熱板11より熱伝導率が高い材質で形成すればよく、このように構成することで更に効率的に放熱させることが可能となる。   Further, the temperature of the surface 9 when the semiconductor element 1 generates heat is usually lower than the temperature of the back surface 8. In order to dissipate heat in the same manner as the front surface 9 in a state where the thermal gradient is smaller than that of the back surface 9, the second heat radiating plate 21 may be formed of a material having a higher thermal conductivity than the first heat radiating plate 11. With this configuration, it is possible to dissipate heat more efficiently.

図2は、図1に示す半導体放熱装置を複数の半導体素子に適用した場合の外観図であり、配線基板に実装する以前の状態である。図2に示すように、半導体放熱装置10は、3個の半導体素子1を並べて配置し、3本のネジ28を締め付けて第1放熱板11と第2放熱板21とで3個の半導体素子1を挟持して固定している。   FIG. 2 is an external view when the semiconductor heat dissipation device shown in FIG. 1 is applied to a plurality of semiconductor elements, and shows a state before being mounted on a wiring board. As shown in FIG. 2, the semiconductor heat radiating device 10 includes three semiconductor elements 1 arranged by arranging three semiconductor elements 1 side by side, tightening three screws 28, and a first heat radiating plate 11 and a second heat radiating plate 21. 1 is clamped and fixed.

本実施形態においては、3個の半導体素子1を並べているが、半導体素子1の数はこれに限定されず、2個でも4個以上でも構わない。   In the present embodiment, three semiconductor elements 1 are arranged, but the number of semiconductor elements 1 is not limited to this, and may be two or four or more.

図3は、図2に示す半導体放熱装置の分解図であり、ネジ28を省略している。図3に示すように、半導体放熱装置10を組み立てる際には、3個の半導体素子1を、各々の貫通孔4と対応する第1放熱板11の第1取付孔14と第2放熱板21の第2取付孔24の位置が概ね一線上にあるように配置し、ネジ28を第2取付孔24、貫通孔4に通し、第1取付孔14にネジ止めする。   FIG. 3 is an exploded view of the semiconductor heat dissipation device shown in FIG. As shown in FIG. 3, when assembling the semiconductor heat radiating device 10, the three semiconductor elements 1 are connected to the first mounting holes 14 and the second heat radiating plates 21 of the first heat radiating plates 11 corresponding to the respective through holes 4. The second mounting hole 24 is arranged so that the position of the second mounting hole 24 is substantially aligned, and the screw 28 is passed through the second mounting hole 24 and the through hole 4, and screwed to the first mounting hole 14.

なお、半導体放熱装置10を組み立てる際に、半導体素子1の配線基板140に対する取り付け角度がずれないようにするには、半導体素子1の向きを規制する組立治具を使用する等の周知の方法を適宜選択し、位置ずれを防止すればよい。   In order to prevent the mounting angle of the semiconductor element 1 with respect to the wiring substrate 140 when the semiconductor heat dissipation device 10 is assembled, a known method such as using an assembly jig for regulating the orientation of the semiconductor element 1 is used. An appropriate selection may be made to prevent misalignment.

図4は、従来の半導体放熱装置の実施例と図1に示す実施形態とを対比する断面図で、図4(A)は、特許文献1に記載された技術を図1に示す実施形態に対応させて示し、図4(B)は、図1に示す実施形態を示している。   4 is a cross-sectional view comparing an example of a conventional semiconductor heat dissipation device with the embodiment shown in FIG. 1, and FIG. 4 (A) shows the technique described in Patent Document 1 in the embodiment shown in FIG. Correspondingly, FIG. 4B shows the embodiment shown in FIG.

図4(A)に示すように、従来の半導体放熱装置110は、放熱板111と樹脂等を金型により成形して形成した固定部材121とで構成され、固定部材121をネジ128によって放熱板111に取り付け、本来は、固定部材121の固定部122で半導体素子1を放熱板111に押さえ込むようになっている。   As shown in FIG. 4A, the conventional semiconductor heat radiating device 110 includes a heat radiating plate 111 and a fixing member 121 formed by molding a resin or the like with a mold, and the fixing member 121 is radiated by screws 128. The semiconductor element 1 is originally pressed onto the heat radiating plate 111 by the fixing portion 122 of the fixing member 121.

しかし、図4(A)においては、半導体素子1の背面8から表面9までの厚みが所定値より小さいか、または段差部127の段差が所定値より大きい場合、あるいはその両方が複合した場合を示しており、固定部122と半導体素子1の表面9との間には隙間ができている。   However, in FIG. 4A, the thickness from the back surface 8 to the front surface 9 of the semiconductor element 1 is smaller than a predetermined value, the step of the stepped portion 127 is larger than the predetermined value, or both are combined. As shown, a gap is formed between the fixing portion 122 and the surface 9 of the semiconductor element 1.

このような状態は、半導体放熱装置110を組み立てた時点で発生していなくとも、特に、固定部材121が樹脂である場合は、経時変化で起こることがある。この状態では、半導体素子1の背面8は放熱板111に接触していても圧着不足となっており、半導体素子1の背面8と放熱板111の接触面113との熱抵抗が増加して放熱効率が低下したり、半導体素子1の固定が不十分であったり等のトラブルが発生する。   Even if such a state does not occur at the time of assembling the semiconductor heat radiating device 110, particularly when the fixing member 121 is a resin, it may occur over time. In this state, even if the back surface 8 of the semiconductor element 1 is in contact with the heat radiating plate 111, pressure bonding is insufficient, and the thermal resistance between the back surface 8 of the semiconductor element 1 and the contact surface 113 of the heat radiating plate 111 is increased to dissipate heat. Troubles such as reduction in efficiency and insufficient fixation of the semiconductor element 1 occur.

しかし、図4(B)に示す本発明の半導体放熱装置10においては、半導体素子1の厚みが所定値より小さい場合や、第2放熱板21の段曲部27の段差が所定値より大きい場合でも、ネジ28を締め込むことで、第2放熱板21の弾性によって押圧部22が半導体素子1の収納部3を適切に押圧することができる。   However, in the semiconductor heat radiating device 10 of the present invention shown in FIG. 4B, when the thickness of the semiconductor element 1 is smaller than a predetermined value, or when the step of the stepped portion 27 of the second heat radiating plate 21 is larger than the predetermined value. However, by tightening the screw 28, the pressing portion 22 can appropriately press the housing portion 3 of the semiconductor element 1 by the elasticity of the second heat radiating plate 21.

従って、図4(B)に示す本発明の構造は、図4(A)に示す従来の構造に比べて、半導体素子1の発熱を効率的に安定して放熱することができ、また、第2放熱板21が複雑な形状でないため、板材を板金加工したものを使用することができ、半導体放熱装置を安価に製造することができる。   Therefore, the structure of the present invention shown in FIG. 4B can efficiently and stably dissipate heat generated from the semiconductor element 1 as compared with the conventional structure shown in FIG. 2 Since the heat radiating plate 21 is not a complicated shape, it is possible to use a sheet metal processed sheet metal, and to manufacture a semiconductor heat radiating device at low cost.

図5は、本発明による半導体放熱装置の他の実施形態を示す説明図であり、図5(A)は半導体放熱装置の断面図、図5(B)は第2放熱板の外観図である。本実施形態は、複数の半導体素子1を配置する場合に適用し、第2放熱板41の半導体素子1の配置位置間にスリットを形成している。   FIG. 5 is an explanatory view showing another embodiment of the semiconductor heat dissipation device according to the present invention, FIG. 5 (A) is a sectional view of the semiconductor heat dissipation device, and FIG. 5 (B) is an external view of the second heat dissipation plate. . This embodiment is applied to the case where a plurality of semiconductor elements 1 are arranged, and slits are formed between the arrangement positions of the semiconductor elements 1 on the second heat radiation plate 41.

図5(A)に示すように、半導体放熱装置30は、第1放熱板31と第2放熱板41、及び固定部材となるネジ48とナット49で構成されている。図1に示す実施形態において、第2放熱板21に形成されていた屈曲部26が、本実施形態では、第1放熱板31に屈曲部36として設けてある。   As shown in FIG. 5A, the semiconductor heat radiating device 30 includes a first heat radiating plate 31, a second heat radiating plate 41, and screws 48 and nuts 49 serving as fixing members. In the embodiment shown in FIG. 1, the bent portion 26 formed in the second heat radiating plate 21 is provided as the bent portion 36 in the first heat radiating plate 31 in the present embodiment.

また、図1に示す実施形態では、第1取付孔14は雌ネジとなっていたが、本実施形態では、第1取付孔34は第2取付孔44と同様に、ネジ48の外径よりも大径となっており、第2取付孔44、半導体素子1の貫通孔4、第1取付孔34に通したネジ48をナット49で締めこみ、第2放熱板41の押圧部42が半導体素子1の収納部3を押圧するようになっている。   In the embodiment shown in FIG. 1, the first mounting hole 14 is a female screw. However, in the present embodiment, the first mounting hole 34 is the same as the second mounting hole 44 from the outer diameter of the screw 48. The screw 48 passed through the second mounting hole 44, the through hole 4 of the semiconductor element 1, and the first mounting hole 34 is tightened with a nut 49, and the pressing portion 42 of the second heat radiating plate 41 becomes the semiconductor. The housing portion 3 of the element 1 is pressed.

本実施形態においては、第2放熱板41側にネジ48のネジ頭、第1放熱板31側にナット49となるように配置されているが、この形態に限らず逆向きの配置でもよく、ネジ48を通す方向は組み立て易さ等を考慮して適宜選択される。また、第1放熱板31の基板取付部35も、ネジ143とナット144で配線基板140に固定しているが、これもこの形態に限らず、他の方法で固定してもよい。   In this embodiment, the screw head of the screw 48 is arranged on the second heat radiating plate 41 side, and the nut 49 is arranged on the first heat radiating plate 31 side. The direction through which the screw 48 passes is appropriately selected in consideration of ease of assembly and the like. Moreover, although the board | substrate attaching part 35 of the 1st heat sink 31 is also being fixed to the wiring board 140 with the screw 143 and the nut 144, this is not restricted to this form, You may fix with another method.

なお、図1に示す実施形態においても、第2放熱板21の第2取付孔24を雌ネジとして、ネジ28を第1放熱板11側から通すようにしてもよく、これ以降に説明する他の実施形態においても同様である。   In the embodiment shown in FIG. 1 as well, the second mounting hole 24 of the second heat radiating plate 21 may be a female screw, and the screw 28 may be passed from the first heat radiating plate 11 side. The same applies to the embodiment.

また、図5(B)に示すように、第2放熱板41は、半導体素子1の配置位置間にスリット46を形成している。スリット46は、押圧部42の先端側から段曲部47まで形成されているため、ネジ48とナット49を締め込むことで、スリット46で分離された押圧部42の各々が、半導体素子1の収納部3を個別に押圧することが可能となる。   In addition, as shown in FIG. 5B, the second heat radiating plate 41 forms slits 46 between the positions where the semiconductor elements 1 are arranged. Since the slit 46 is formed from the front end side of the pressing portion 42 to the stepped portion 47, each of the pressing portions 42 separated by the slit 46 is tightened with a screw 48 and a nut 49 of the semiconductor element 1. It becomes possible to press the accommodating part 3 separately.

従って、本実施形態においては、複数の半導体素子1の背面8から表面9までの厚さがばらついていたとしても、ネジ48の各々の締め付けトルクを個別に管理することで、全ての半導体素子1の第1放熱板31と第2放熱板41との圧着の程度を適切にすることができる。   Therefore, in this embodiment, even if the thicknesses from the back surface 8 to the front surface 9 of the plurality of semiconductor elements 1 vary, all the semiconductor elements 1 can be managed by individually managing the tightening torque of each screw 48. The degree of pressure bonding between the first heat radiation plate 31 and the second heat radiation plate 41 can be made appropriate.

図6は、本発明による半導体放熱装置の他の実施形態を示す説明図であり、図6(A)は半導体放熱装置の断面図、図6(B)は第2放熱板の外観図である。本実施形態は、半導体152の収納部153と貫通孔154を有する固定部155とに段差がない形状の半導体素子151を配置する場合に適用する。   6A and 6B are explanatory views showing another embodiment of the semiconductor heat dissipation device according to the present invention. FIG. 6A is a sectional view of the semiconductor heat dissipation device, and FIG. 6B is an external view of the second heat dissipation plate. . This embodiment is applied to the case where a semiconductor element 151 having a shape with no step is disposed between the housing portion 153 of the semiconductor 152 and the fixing portion 155 having the through hole 154.

図6(A)に示すように、半導体放熱装置50は、第1放熱板51と第2放熱板61、及び固定部材となるネジ68で構成され、第2放熱板61は、押圧部62と半導体素子151の固定部155との間に空間を確保するように、段曲部67と押圧部62を形成している。   As shown in FIG. 6A, the semiconductor heat radiating device 50 includes a first heat radiating plate 51, a second heat radiating plate 61, and a screw 68 serving as a fixing member. A stepped portion 67 and a pressing portion 62 are formed so as to secure a space between the fixing portion 155 of the semiconductor element 151.

従って、ネジ68を締め込むことで、第2放熱板61の接合部65を支点、第2取付孔64とネジ68の頭部との係合部を力点、第2接触面63を作用点として、第2放熱板61の弾性によって押圧部62が半導体素子1の収納部3を押圧することができる。   Therefore, by tightening the screw 68, the joint portion 65 of the second heat radiating plate 61 is a fulcrum, the engaging portion between the second mounting hole 64 and the head of the screw 68 is a force point, and the second contact surface 63 is an action point. The pressing part 62 can press the housing part 3 of the semiconductor element 1 by the elasticity of the second heat radiating plate 61.

本実施形態においては、ネジ68をバネ座金69を介して第1放熱板51の第1取付孔54にネジ止めしているが、第2放熱板61の弾性がバネ座金と同様な効果を発揮するため、バネ座金69は必須というわけではなく、他の実施形態と同様に、バネ座金69を介さずにネジ68のみでネジ止めしても構わない。   In the present embodiment, the screw 68 is screwed to the first mounting hole 54 of the first heat radiating plate 51 via the spring washer 69, but the elasticity of the second heat radiating plate 61 exhibits the same effect as the spring washer. For this reason, the spring washer 69 is not essential, and it may be screwed only with the screw 68 without using the spring washer 69 as in the other embodiments.

また、図1に示す実施形態において、第2放熱板21のみに形成されていた屈曲部26が、本実施形態では、図6(A)(B)に示すように、第2放熱板61の屈曲部66だけではなく第1放熱板51にも屈曲部56として設けてある。このように、第1放熱板51と第2放熱板61の両方に屈曲部56、66を設けることで、半導体放熱装置50の放熱面積が増加し、放熱効率を更に上げることができる。   Further, in the embodiment shown in FIG. 1, the bent portion 26 formed only on the second heat radiating plate 21 is replaced with the second heat radiating plate 61 in the present embodiment as shown in FIGS. Not only the bent portion 66 but also the first heat radiating plate 51 is provided as the bent portion 56. Thus, by providing the bent portions 56 and 66 on both the first heat radiating plate 51 and the second heat radiating plate 61, the heat radiating area of the semiconductor heat radiating device 50 is increased, and the heat radiating efficiency can be further increased.

図7は、本発明による半導体放熱装置の他の実施形態を示す断面図である。本実施形態は、図1、5、6の実施形態では第2放熱板に設けられていた段曲部を第1放熱板側に設けた形態であり、図7(A)は、収納部3と固定部5に段差がある半導体素子1を配置する場合、図7(B)は、収納部153と固定部155に段差がない半導体素子151を配置する場合に適用する。   FIG. 7 is a cross-sectional view showing another embodiment of a semiconductor heat dissipation device according to the present invention. In this embodiment, the stepped portion provided on the second heat sink in the embodiments of FIGS. 1, 5, and 6 is provided on the first heat sink, and FIG. 7B is applied when the semiconductor element 151 having no step is disposed between the storage portion 153 and the fixing portion 155.

図7(A)に示すように、半導体放熱装置70は、第1放熱板71と第2放熱板81、及び固定部材となるネジ88で構成されており、第1放熱板71に段差部77、第2放熱板81に屈曲部86を設けている。   As shown in FIG. 7A, the semiconductor heat radiating device 70 includes a first heat radiating plate 71, a second heat radiating plate 81, and a screw 88 that serves as a fixing member. The bent portion 86 is provided in the second heat radiating plate 81.

また、図7(B)に示すように、半導体放熱装置90は、第1放熱板91と第2放熱板101、及び固定部材となるネジ108で構成されており、第1放熱板91に段差部97と屈曲部96を設けている。   As shown in FIG. 7B, the semiconductor heat dissipation device 90 includes a first heat dissipation plate 91, a second heat dissipation plate 101, and a screw 108 serving as a fixing member. A portion 97 and a bent portion 96 are provided.

図7(A)(B)に示すような、段曲部77、97を第1放熱板側に設けた形態であっても、図1、5、6に示すような、段曲部27、47、67を第2放熱板側に設けた形態と同様な作用及び効果を有するため、段曲部を第1放熱板と第2放熱板の何れに設けるかは設計的事項であり、設計時の都合によって適宜選択することができる。   Even if the stepped portions 77 and 97 as shown in FIGS. 7 (A) and 7 (B) are provided on the first heat radiating plate side, the stepped portion 27, as shown in FIGS. 47 and 67 have the same operation and effect as the configuration in which the second heat sink is provided on the side of the second heat radiating plate. Therefore, it is a design matter whether the stepped portion is provided in the first heat radiating plate or the second heat radiating plate. It can be appropriately selected depending on the circumstances.

以上で実施形態の説明を終えるが、本考案は上記の実施形態に限定されず、その目的と利点を損なうことのない適宜の変形を含み、更に上記の実施形態に示した数値等による限定は受けない。
Although the description of the embodiment has been completed above, the present invention is not limited to the above-described embodiment, includes appropriate modifications without impairing the object and advantages thereof, and is further limited by numerical values shown in the above-described embodiment. I do not receive it.

1、151:半導体素子
2:半導体
3、153:収納部
4、154:貫通孔
5、155:固定部
6:パッケージ
7:リード端子
8:背面(第1放熱面)
9:表面(第2放熱面)
10、30、50、70、90:半導体放熱装置
11、31、51、71、91:第1放熱板(第1放熱部材)
12、32、52:半導体取付部
13、33、53:第1接触面
14、34、54:第1取付孔
15、35、55:基板取付部
36、56、96:屈曲部
77、97:段曲部
21、41、61、81、101:第2放熱板(第2放熱部材)
22、42、62:押圧部
23、43、63:第2接触面
24、44、64:第2取付孔
25、45、65:接合部
26、66、86、:屈曲部
27、47、67、107:段曲部
28、48、68、88、108:ネジ(固定部材)
46:スリット
49:ナット
69:バネ座金
110、130:半導体放熱装置
111、131:放熱板
113、133:接触面
121:固定部材
122:固定部
127:段差部
128、138、142、143:ネジ
140:配線基板
141:スルーホール
144:ナット
DESCRIPTION OF SYMBOLS 1,151: Semiconductor element 2: Semiconductor 3, 153: Storage part 4, 154: Through-hole 5, 155: Fixing part 6: Package 7: Lead terminal 8: Back surface (first heat dissipation surface)
9: Surface (second heat dissipation surface)
10, 30, 50, 70, 90: Semiconductor heat dissipation device 11, 31, 51, 71, 91: First heat dissipation plate (first heat dissipation member)
12, 32, 52: Semiconductor attachment portions 13, 33, 53: First contact surfaces 14, 34, 54: First attachment holes 15, 35, 55: Substrate attachment portions 36, 56, 96: Bending portions 77, 97: Stepped portions 21, 41, 61, 81, 101: second heat radiating plate (second heat radiating member)
22, 42, 62: pressing portions 23, 43, 63: second contact surfaces 24, 44, 64: second mounting holes 25, 45, 65: joint portions 26, 66, 86 ,: bent portions 27, 47, 67 107: Stepped portions 28, 48, 68, 88, 108: Screws (fixing members)
46: slit 49: nut 69: spring washer 110, 130: semiconductor heat dissipation device 111, 131: heat dissipation plate 113, 133: contact surface 121: fixing member 122: fixing portion 127: stepped portion 128, 138, 142, 143: screw 140: Wiring board 141: Through hole 144: Nut

Claims (8)

半導体を収納した収納部及び貫通孔を有した固定部で構成され、前記収納部及び固定部の同一側に形成される第1放熱面と、前記収納部の前記第1放熱面の反対側に形成される第2放熱面とを設けた半導体素子に装着される半導体放熱装置に於いて、
前記第1放熱面に接触する第1放熱部材と、
前記第1放熱部材との接合部を支点として前記固定部に接触せずに前記第2放熱面に弾性的に接触する第2放熱部材と、
前記貫通孔に挿通して前記第1放熱部材及び第2放熱部材に係合し、前記第1放熱部材と前記第2放熱部材とで前記半導体素子を挟持させる固定部材と、
を備えたことを特徴とする半導体放熱装置。
A storage part containing a semiconductor and a fixed part having a through-hole, and a first heat radiating surface formed on the same side of the storage part and the fixed part, and a side opposite to the first heat radiating surface of the storage part In a semiconductor heat dissipation device attached to a semiconductor element provided with a second heat dissipation surface to be formed,
A first heat radiating member in contact with the first heat radiating surface;
A second heat dissipating member that elastically contacts the second heat dissipating surface without contacting the fixed part with a joint with the first heat dissipating member as a fulcrum;
A fixing member that is inserted through the through hole and engages with the first and second heat dissipation members, and sandwiches the semiconductor element between the first heat dissipation member and the second heat dissipation member;
A semiconductor heat dissipation device.
請求項1記載の半導体放熱装置に於いて、
前記第1放熱部材は、
前記第1放熱面の実質的に全面に接触する第1接触面と、
前記固定部材を挿通する第1取付孔と、
を有し、
前記第2放熱部材は、
前記第2放熱面の一部又は全面に接触する第2接触面と、
前記固定部材を挿通する第2取付孔と、
を有し、
前記固定部材は、
前記第1取付孔、前記貫通孔、前記第2取付孔に挿通し、前記接合部を支点、前記第2取付孔を力点、前記第2接触面を作用点として前記第2放熱面を押圧することを特徴とする半導体放熱装置。
In the semiconductor heat dissipation device according to claim 1,
The first heat dissipation member is
A first contact surface that contacts substantially the entire surface of the first heat dissipation surface;
A first mounting hole for inserting the fixing member;
Have
The second heat radiating member is
A second contact surface that contacts a part or the entire surface of the second heat dissipation surface;
A second mounting hole through which the fixing member is inserted;
Have
The fixing member is
Inserting the first mounting hole, the through hole, and the second mounting hole, pressing the second heat radiating surface with the joint portion as a fulcrum, the second mounting hole as a force point, and the second contact surface as an action point. A semiconductor heat dissipation device.
請求項2記載の半導体放熱装置に於いて、前記第1放熱部材は、配線基板に固定する基板取付部を有することを特徴とする半導体放熱装置。
3. The semiconductor heat radiating device according to claim 2, wherein the first heat radiating member has a board mounting portion fixed to the wiring board.
請求項3に記載の半導体放熱装置に於いて、前記第1接触面に複数の前記半導体素子を前記配線基板に実装する方向に並べて配置し、前記第1放熱部材と前記第2放熱部材とで前記複数の半導体素子を挟持して固定することを特徴とする半導体放熱装置。
4. The semiconductor heat dissipation device according to claim 3, wherein a plurality of the semiconductor elements are arranged side by side in a direction of mounting on the wiring board on the first contact surface, and the first heat dissipation member and the second heat dissipation member include: A semiconductor heat dissipation device, wherein the plurality of semiconductor elements are sandwiched and fixed.
請求項4記載の半導体放熱装置に於いて、前記第2放熱部材は、前記複数の半導体素子の配置位置間にスリットを形成し、前記スリットにより分離された前記第2接触面の各々が、前記複数の半導体素子の前記第2放熱面に個別に接触することを特徴とする半導体放熱装置。
5. The semiconductor heat dissipation device according to claim 4, wherein the second heat dissipation member forms a slit between positions where the plurality of semiconductor elements are arranged, and each of the second contact surfaces separated by the slit is A semiconductor heat dissipating device, wherein the semiconductor heat dissipating device individually contacts the second heat dissipating surfaces of a plurality of semiconductor elements.
請求項3乃至5の何れかに記載の半導体放熱装置に於いて、前記第1放熱部材及び第2放熱部材の少なくとも何れか一方は、前記基板取付部を前記配線基板に固定した状態で、前記配線基板とは反対側に、前記配線基板の略平行方向に屈曲した形状の屈曲部を有することを特徴とする半導体放熱装置。
6. The semiconductor heat radiating device according to claim 3, wherein at least one of the first heat radiating member and the second heat radiating member is in a state where the board mounting portion is fixed to the wiring board. A semiconductor heat radiating device having a bent portion bent in a substantially parallel direction of the wiring board on the side opposite to the wiring board.
請求項1乃至6の何れかに記載の半導体放熱装置に於いて、前記第1放熱部材及び第2放熱部材は、板金加工したアルミニウム又はアルミニウム合金であることを特徴とする半導体放熱装置。
7. The semiconductor heat radiating device according to claim 1, wherein the first heat radiating member and the second heat radiating member are made of sheet metal or aluminum alloy.
請求項1乃至7の何れかに記載の半導体放熱装置に於いて、前記第2放熱部材は、前記第1放熱部材より熱伝導率が高い材質であることを特徴とする半導体放熱装置。   8. The semiconductor heat radiating device according to claim 1, wherein the second heat radiating member is made of a material having a higher thermal conductivity than the first heat radiating member.
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WO2017098621A1 (en) * 2015-12-10 2017-06-15 新電元工業株式会社 Electronic component unit and heat conductive placement member
JP2020511799A (en) * 2017-03-20 2020-04-16 エルジー イノテック カンパニー リミテッド Heat dissipation device for power conversion module and power conversion module including the same
CN112087904A (en) * 2020-10-13 2020-12-15 浙江宝立普自动化设备制造有限公司 Electric cabinet of knit-stitch sock turning machine
JP2021150640A (en) * 2020-03-17 2021-09-27 富士通クライアントコンピューティング株式会社 heat sink

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WO2017098621A1 (en) * 2015-12-10 2017-06-15 新電元工業株式会社 Electronic component unit and heat conductive placement member
JPWO2017098621A1 (en) * 2015-12-10 2017-12-07 新電元工業株式会社 Electronic component unit and heat conduction mounting member
JP2020511799A (en) * 2017-03-20 2020-04-16 エルジー イノテック カンパニー リミテッド Heat dissipation device for power conversion module and power conversion module including the same
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JP2021150640A (en) * 2020-03-17 2021-09-27 富士通クライアントコンピューティング株式会社 heat sink
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