JP2012088417A - Method for manufacturing electro-optic device, and electro-optic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an electro-optic device, which is capable of surely forming a photosensitive resin layer in a prescribed region of an electro-optic device substrate even when using the electro-optic device substrate having an inclined end surface formed at an edge thereof, and to provide an electro-optic device manufactured by this method.SOLUTION: When a photosensitive resin layer 80 is formed in a prescribed region on the side of one surface 10g of an electro-optic device substrate 10s in a liquid crystal device, a light shielding film 85 is formed on a first inclined end surface 10i formed at the edge on the side of one surface 10g of the electro-optic device substrate 10s in a light shielding film formation step. The positive type photosensitive resin layer 80 is applied to the side of one surface 10g of the electro-optic device substrate 10s in a photosensitive resin layer formation step, and then, the photosensitive resin film 80 is exposed and developed in an exposure and development step. During the exposure, light going toward the first inclined end surface 10i is shielded by the light shielding film 85 not to impinge on the inside of the electro-optic device substrate 10s from the first inclined end surface 10i.

Description

  The present invention relates to a method for manufacturing an electro-optical device including steps of exposing and developing a photosensitive resin layer applied to a translucent electro-optical device substrate, and an electro-optical device manufactured by the method. .

  In a manufacturing process of an electro-optical device such as a liquid crystal device or an organic electroluminescence device, a resin layer or a resist mask is formed in a predetermined region on a translucent electro-optical device substrate such as a glass substrate or a quartz substrate. A step of exposing and developing the photosensitive resin layer applied to the electro-optical device substrate is performed.

  For example, when forming a resist mask for patterning the translucent film 8 shown in FIG. 9A, first, a positive type photosensitive resin layer 80 is applied to the one surface 10g side of the electro-optical device substrate 10s. After that, as shown in FIGS. 9C and 9D, an exposure development process is performed in which the photosensitive resin layer 80 is exposed and developed through the exposure mask 88. Here, in the electro-optical device substrate 10s, the first inclined end surface 10i and the second inclined end surface 10j may be formed on the edge on the one surface 10g side and the edge on the other surface 10h side by chamfering. In such a case, the photosensitive resin layer 80 on the first inclined end face 10i is thick. For this reason, the photosensitive resin layer 80 on the first inclined end face 10i is difficult to be surely exposed by one exposure shown in FIG. 9C, and as shown in FIG. 9B. Further, end face exposure for exposing the photosensitive resin layer 80 formed on the first inclined end face 10i through the light shielding member 87 or the like may be performed in advance.

  However, in the exposure shown in FIGS. 9B and 9C, as shown in FIG. 9B, the light L1 emitted toward the first inclined end face 10i is transmitted from the first inclined end face 10i to the electro-optical device. When the light is incident on the interior of the substrate 10s and reflected by the second inclined end face 10j as indicated by the arrow L3, an unnecessary portion 80s that is not planned to be exposed in the photosensitive resin layer 80 is exposed. As a result, as shown in FIG. 9D, after development, a missing portion 81t is generated in the resist mask 81 made of the photosensitive resin layer 80. As shown in FIG. The optical film 8a has a problem that the missing portion 8t of the light-transmitting film 8a occurs at a position overlapping the missing portion 81t of the resist mask 81.

  In addition, as shown to Fig.10 (a), although the photosensitive resin layer 80 on the 1st inclination end surface 10i may be wiped off with an organic solvent, when this method is employ | adopted, it is an area | region adjacent to the 1st inclination end surface 10i. At 10r, since the photosensitive resin layer 80 is pushed away from the first inclined end face 10i, the photosensitive resin layer 80w becomes thicker in the region 10r adjacent to the first inclined end face 10i. As a result, after the exposure and development process shown in FIGS. 9C and 9D, there is a problem that an extra photosensitive resin layer 80u remains in the region 10r adjacent to the first inclined end face 10i. The extra photosensitive resin layer 80u becomes a foreign matter when the surface of the electro-optical device substrate 10s is polished, and when the electro-optical device substrate 10s is rubbed on the surface of the liquid crystal device substrate, rubbing unevenness is caused. Cause the occurrence. Further, even if the photosensitive resin layer 80 on the first inclined end face 10i is wiped with an organic solvent, when the exposure shown in FIGS. 9B and 9C is performed, an extra portion 80s in the photosensitive resin layer 80 is exposed. It is not possible to solve the problem of being done.

  Therefore, the first inclined end surface 10i is used as a light scattering surface, and the light L1 irradiated toward the first inclined end surface 10i is scattered when entering the inside of the electro-optical device substrate 10s from the first inclined end surface 10i. It has been proposed (see Patent Document 1).

JP 2006-38984 A

  However, even when the configuration described in Patent Document 1 is employed, reflection occurs as long as the light L1 irradiated toward the first inclined end surface 10i is incident on the electro-optical device substrate 10s from the first inclined end surface 10i. There is a problem that it is not possible to reliably prevent an unnecessary portion of the photosensitive resin layer 80 from being exposed.

  In view of the above problems, an object of the present invention is to reliably provide a photosensitive resin layer in a predetermined region of an electro-optical device substrate even when an electro-optical device substrate having an inclined end surface is formed on an edge. It is an object of the present invention to provide a method for manufacturing an electro-optical device that can be formed, and an electro-optical device manufactured by the method.

  In order to solve the above-described problem, a method for manufacturing an electro-optical device according to the present invention includes a first inclined end surface and an end on the other surface side formed on an edge on one surface side of a translucent electro-optical device substrate. A light shielding film forming step of forming a light shielding film on the first inclined end surface of the second inclined end surfaces formed on the edge; and a photosensitive resin layer forming step of applying a positive type photosensitive resin layer on the one surface side; And an exposure development step of patterning the photosensitive resin layer by exposing and developing the photosensitive resin layer.

  In the present invention, when the photosensitive resin layer is formed in the predetermined region on the one surface side of the electro-optical device substrate, in the light shielding film forming step, the first formed on the edge on the one surface side of the electro-optical device substrate. A light shielding film is formed on the inclined end face. Then, in the photosensitive resin layer forming step, a positive type photosensitive resin layer is applied to one surface side of the electro-optical device substrate, and thereafter, the photosensitive resin layer is exposed and developed in an exposure development step. Therefore, when the exposure is performed, the light traveling toward the first inclined end surface is blocked by the light shielding film, and therefore does not enter the electro-optical device substrate from the first inclined end surface. Therefore, it is possible to prevent light incident on the electro-optical device substrate from the first inclined end face from being reflected by the second inclined end face and exposing an extra portion of the photosensitive resin layer. Therefore, even when an electro-optical device substrate having an inclined end face is formed on the edge, the photosensitive resin layer can be reliably formed in a predetermined region on the electro-optical device substrate.

  In the present invention, the light shielding film is preferably a light reflecting film. If the light shielding film is a light reflecting film, the light traveling toward the first inclined end face is reflected by the light shielding film, so that it does not enter the electro-optical device substrate. Further, if the light shielding film is a light reflecting film, the light traveling toward the first inclined end face is reflected by the light shielding film and again exposes the photosensitive resin layer on the first inclined end face. Therefore, even if the photosensitive resin layer on the first inclined end face is thick, the photosensitive resin layer on the first inclined end face can be reliably exposed, and after development, the photosensitive resin layer can be reliably attached from the first inclined end face. Can be removed.

  In the present invention, the light shielding film may be a light absorbing film. If the light shielding film is a light absorbing film, the light traveling toward the first inclined end face is absorbed by the light shielding film, and therefore does not enter the electro-optical device substrate.

  In the present invention, in the exposure and development step, an end face exposure for exposing the photosensitive resin layer formed on the first inclined end face in the photosensitive resin layer and an exposure mask having a predetermined translucent pattern are used. It is preferable to perform exposure for patterning that exposes the photosensitive resin layer. According to this configuration, even if the photosensitive resin layer on the first inclined end surface is thick, the photosensitive resin layer on the first inclined end surface can be reliably exposed. Therefore, the photosensitive resin layer can be reliably removed from the first inclined end surface after development.

  In the present invention, in the light shielding film forming step, it is preferable to form the light shielding film on a surface adjacent to the first inclined end surface via a corner portion on the one surface side in addition to the first inclined end surface. . According to this configuration, even if the photosensitive resin layer on the first inclined end surface and the photosensitive resin layer near the first inclined end surface are thick, the photosensitive resin layer on the first inclined end surface and the vicinity of the first inclined end surface The photosensitive resin layer can be reliably exposed. Therefore, after development, the photosensitive resin layer can be reliably removed from the first inclined end face and from the vicinity of the first inclined end face.

  The electro-optical device manufacturing method according to the present invention can be applied to various electro-optical device manufacturing methods such as a liquid crystal device manufacturing method and an organic electroluminescence device manufacturing method. Among these electro-optical devices, when the present invention is applied to a method of manufacturing a liquid crystal device, the electro-optical device substrate is used as at least one of a pair of liquid crystal device substrates facing each other through a liquid crystal layer in the liquid crystal device. .

It is a block diagram which shows the electric constitution of the liquid crystal device to which this invention is applied. It is explanatory drawing of the liquid crystal panel used for the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of the pixel of the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing which shows the manufacturing process of the liquid crystal device which concerns on Embodiment 1 of this invention. FIG. 5 is an explanatory diagram of an electro-optical device substrate used for manufacturing the liquid crystal device according to the first embodiment of the invention. FIG. 7 is an explanatory diagram illustrating a process of forming a photosensitive resin layer in a predetermined region on the electro-optical device substrate in the method for manufacturing a liquid crystal device according to the first embodiment of the present invention. FIG. 10 is an explanatory diagram illustrating a process of forming a photosensitive resin layer in a predetermined region on an electro-optical device substrate in the method for manufacturing a liquid crystal device according to the second embodiment of the present invention. It is a schematic block diagram of the projection type display apparatus using the liquid crystal device to which this invention is applied. FIG. 10 is an explanatory diagram illustrating a process of forming a photosensitive resin layer in a predetermined region on a substrate for an electro-optical device in a conventional method for manufacturing a liquid crystal device. It is explanatory drawing which shows the process of wiping off the photosensitive resin layer in the manufacturing method of the conventional liquid crystal device.

  Embodiments of the present invention will be described with reference to the drawings. In the following description, the case where the present invention is applied to a liquid crystal device and a manufacturing method thereof among various electro-optical devices will be mainly described. In the drawings referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. Further, in the drawings referred to in the following description, the corresponding portions are described with the same reference numerals so that the correspondence with the configurations described with reference to FIGS. 9 and 10 can be easily understood.

[Embodiment 1]
(overall structure)
FIG. 1 is a block diagram showing an electrical configuration of a liquid crystal device (electro-optical device) to which the present invention is applied. In FIG. 1, a liquid crystal device 100 has a liquid crystal panel 100p in a TN (Twisted Nematic) mode or a VA (Vertical Alignment) mode, and the liquid crystal panel 100p has a plurality of pixels 100a arranged in a matrix in the central region. The pixel area 10a (image display area) is provided. In the liquid crystal panel 100p, on the first substrate 10 (see FIG. 2 and the like) described later, a plurality of data lines 6a and a plurality of scanning lines 3a extend vertically and horizontally inside the pixel region 10a, and at the intersections thereof. A pixel 100a is configured at a corresponding position. In each of the plurality of pixels 100a, a pixel transistor 30 made of a field effect transistor and a pixel electrode 9a described later are formed. The data line 6 a is electrically connected to the source of the pixel transistor 30, the scanning line 3 a is electrically connected to the gate of the pixel transistor 30, and the pixel electrode 9 a is electrically connected to the drain of the pixel transistor 30. Has been.

  In the first substrate 10, a scanning line driving circuit 104 and a data line driving circuit 101 are provided on the outer peripheral side of the pixel region 10a. The data line driving circuit 101 is electrically connected to each data line 6a, and sequentially supplies the image signal supplied from the image processing circuit to each data line 6a. The scanning line driving circuit 104 is electrically connected to each scanning line 3a, and sequentially supplies a scanning signal to each scanning line 3a.

  In each pixel 100a, the pixel electrode 9a is opposed to a common electrode formed on a second substrate 20 (see FIG. 2 and the like), which will be described later, via a liquid crystal layer, and constitutes a liquid crystal capacitor 50a. Each pixel 100a is provided with a holding capacitor 55 in parallel with the liquid crystal capacitor 50a in order to prevent fluctuations in the image signal held in the liquid crystal capacitor 50a. In this embodiment, in order to form the storage capacitor 55, the capacitor line 5b extending in parallel with the scanning line 3a is formed across the plurality of pixels 100a. In this embodiment, the capacitor line 5b is electrically connected to the common potential line 5c to which the common potential Vcom is applied.

(Configuration of the liquid crystal panel 100p)
FIG. 2 is an explanatory diagram of the liquid crystal panel 100p used in the liquid crystal device 100 according to Embodiment 1 of the present invention. FIGS. 2A and 2B are respectively liquid crystals of the liquid crystal device 100 to which the present invention is applied. It is the top view which looked at the panel 100p from the 2nd board | substrate side with each component, and its HH 'sectional drawing.

  As shown in FIGS. 2A and 2B, in the liquid crystal panel 100p, the first substrate 10 and the second substrate 20 are bonded to each other with a sealing material 107 through a predetermined gap. The two substrates 20 are provided in a frame shape along the outer edge. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value.

  In the liquid crystal panel 100p having such a configuration, the first substrate 10 and the second substrate 20 are both square, and the pixel area 10a described with reference to FIG. 1 is provided as a square area in the approximate center of the liquid crystal panel 100p. It has been. Corresponding to this shape, the sealing material 107 is also provided in a substantially rectangular shape, and a substantially rectangular peripheral region 10b is provided in a frame shape between the inner peripheral edge of the sealing material 107 and the outer peripheral edge of the pixel region 10a. . In the first substrate 10, the data line driving circuit 101 and the plurality of terminals 102 are formed along one side of the first substrate 10 outside the pixel region 10 a, and scanning is performed along another side adjacent to the one side. A line driving circuit 104 is formed. Note that a flexible wiring substrate (not shown) is connected to the terminal 102, and various potentials and various signals are input to the first substrate 10 through the flexible wiring substrate.

  As will be described in detail later, in the substrate surface on one side of the first substrate 10, the pixel transistor 10 described with reference to FIG. 1 and the pixel electrode 9a electrically connected to the pixel transistor 30 are provided in the pixel region 10a. An alignment film 16 is formed on the upper layer side of the pixel electrode 9a.

  In addition, on one side of the first substrate 10, a dummy pixel electrode 9b (see FIG. 2B) that is formed simultaneously with the pixel electrode 9a is formed in the peripheral region 10b. For the dummy pixel electrode 9b, a configuration in which the dummy pixel transistor is electrically connected, a configuration in which the dummy pixel transistor is not provided, and a configuration in which the dummy pixel electrode is directly electrically connected to the wiring, or a floating state in which no potential is applied The structure which exists in is adopted. The dummy pixel electrode 9b compresses the height positions of the pixel region 10a and the peripheral region 10b when the surface on which the alignment film 16 is formed on the first substrate 10 is flattened by polishing, so that the alignment film 16 is formed. This contributes to a flat surface. Further, if the dummy pixel electrode 9b is set to a predetermined potential, it is possible to prevent the disorder of the alignment of the liquid crystal molecules at the outer peripheral side end of the pixel region 10a.

  A common electrode 21 is formed on one surface of the second substrate 20 facing the first substrate 10, and an alignment film 26 is formed on the common electrode 21. The common electrode 21 is formed across the plurality of pixels 100a as substantially the entire surface of the second substrate 20 or as a plurality of strip electrodes. Further, a light shielding layer 108 is formed on the lower layer side of the common electrode 21 on one surface side of the second substrate 20 facing the first substrate 10. In this embodiment, the light shielding layer 108 is formed in a frame shape extending along the outer peripheral edge of the pixel region 10a, and functions as a parting. Here, the outer peripheral edge of the light shielding layer 108 is located with a gap between the inner peripheral edge of the sealing material 107 and the light shielding layer 108 and the sealing material 107 do not overlap. In the second substrate 20, the light shielding layer 108 may be formed in a region that overlaps with a region sandwiched between adjacent pixel electrodes 9a.

  In the liquid crystal panel 100p configured as described above, the first substrate 10 is electrically connected between the first substrate 10 and the second substrate 20 in a region overlapping the corner portion of the second substrate 20 outside the sealant 107. An inter-substrate conducting electrode 109 for conducting is formed. The inter-substrate conducting electrode 109 is provided with an inter-substrate conducting material 109 a containing conductive particles, and the common electrode 21 of the second substrate 20 is interposed between the inter-substrate conducting material 109 a and the inter-substrate conducting electrode 109. Thus, it is electrically connected to the first substrate 10 side. For this reason, the common potential Vcom is applied to the common electrode 21 from the first substrate 10 side.

  The sealing material 107 is provided along the outer peripheral edge of the second substrate 20 with substantially the same width dimension. For this reason, the sealing material 107 is substantially rectangular. However, the sealing material 107 is provided so as to pass inside avoiding the inter-substrate conduction electrode 109 in a region overlapping with the corner portion of the second substrate 20, and the corner portion of the sealing material 107 has a substantially arc shape.

  In the liquid crystal device 100 having such a configuration, when the pixel electrode 9a and the common electrode 21 are formed of a light-transmitting conductive film, a transmissive liquid crystal device can be configured. On the other hand, when the common electrode 21 is formed of a light-transmitting conductive film and the pixel electrode 9a is formed of a reflective conductive film, a reflective liquid crystal device can be configured. When the liquid crystal device 100 is of a reflective type, light incident from the second substrate 20 side is modulated while being reflected by the substrate on the first substrate 10 side and emitted, thereby displaying an image. When the liquid crystal device 100 is a transmissive type, the light incident from one of the first substrate 10 and the second substrate 20 is modulated while being transmitted through the other substrate, and an image is displayed. To do.

  The liquid crystal device 100 can be used as a color display device of an electronic device such as a mobile computer or a mobile phone. In this case, a color filter (not shown) and a protective film are formed on the second substrate 20. Further, in the liquid crystal device 100, the polarizing film, the retardation film, the polarizing plate, etc. have a predetermined orientation with respect to the liquid crystal panel 100p according to the type of the liquid crystal layer 50 to be used and the normally white mode / normally black mode. Placed in. Furthermore, the liquid crystal device 100 can be used as a light valve for RGB in a projection display device (liquid crystal projector) described later. In this case, each color liquid crystal device 100 for RGB receives light of each color separated through RGB color separation dichroic mirrors as projection light, so that no color filter is formed.

  In this embodiment, the liquid crystal device 100 is a transmissive liquid crystal device used as an RGB light valve in a projection display device described later, and light incident from the second substrate 20 is transmitted through the first substrate 10. The explanation will be focused on the case of emission. Further, in this embodiment, the liquid crystal device 100 will be described focusing on the case where the liquid crystal layer 50 includes a VA mode liquid crystal panel 100p using a nematic liquid crystal compound having a negative dielectric anisotropy.

(Specific pixel configuration)
FIG. 3 is an explanatory diagram of pixels of the liquid crystal device 100 according to Embodiment 1 of the present invention, and FIGS. 3A and 3B are respectively a first substrate used in the liquid crystal device 100 to which the present invention is applied. 10 is a plan view of adjacent pixels in FIG. 10 and a cross-sectional view when the liquid crystal device 100 is cut at a position corresponding to the line FF ′ in FIG. In FIG. 3A, the semiconductor layer 1a is indicated by a thin and short dotted line, the scanning line 3a is indicated by a thick solid line, the data line 6a and a thin film formed simultaneously with it are indicated by a one-dot chain line, and the capacitance line 5b is indicated by two lines. The pixel electrode 9a is indicated by a thick and long broken line, and the lower electrode layer 4a is indicated by a thin solid line.

  As shown in FIG. 3A, a rectangular pixel electrode 9a is formed on each of the plurality of pixels 100a on the first substrate 10, and data along the vertical and horizontal boundaries of each pixel electrode 9a. Lines 6a and scanning lines 3a are formed. Each of the data line 6a and the scanning line 3a extends linearly, and a pixel transistor 30 is formed in a region where the data line 6a and the scanning line 3a intersect. On the first substrate 10, a capacitor line 5b is formed so as to overlap the scanning line 3a. In this embodiment, the capacitor line 5b includes a main line portion extending linearly so as to overlap the scanning line 3a, and a sub-line portion extending so as to overlap the data line 6a at the intersection of the data line 6a and the scanning line 3a. It has.

  As shown in FIGS. 3A and 3B, the first substrate 10 is formed on the surface (one surface side) of the translucent substrate body 10w such as a quartz substrate or a glass substrate on the liquid crystal layer 50 side. The second substrate 20 is mainly composed of a pixel electrode 9a, a pixel transistor 30 for pixel switching, and an alignment film 16. The second substrate 20 is a translucent substrate body 20w such as a quartz substrate or a glass substrate, and the liquid crystal layer 50 side. The main electrode 21 and the alignment film 26 are mainly formed on the surface (one surface side facing the first substrate 10).

  In the first substrate 10, a pixel transistor 30 including the semiconductor layer 1a is formed in each of the plurality of pixels 100a. The semiconductor layer 1a includes a channel region 1g, a source region 1b, and a drain region 1c that are opposed to the gate electrode 3c, which is a part of the scanning line 3a, via the translucent gate insulating layer 2. The source region 1b and the drain region 1c each have a low concentration region and a high concentration region. The semiconductor layer 1a is composed of, for example, a polycrystalline silicon film or the like formed on a transparent base insulating film 12 made of a silicon oxide film or the like on the substrate body 10w, and the gate insulating layer 2 is formed by a CVD method or the like. The silicon oxide film and the silicon nitride film formed by the above. The gate insulating layer 2 may have a two-layer structure of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 1a and a silicon oxide film or silicon nitride film formed by a CVD method or the like. For the scanning line 3a, a conductive polysilicon film, a metal silicide film, or a metal film is used.

  A translucent first interlayer insulating film 41 made of a silicon oxide film or the like is formed on the upper layer side of the scanning line 3a, and a lower electrode layer 4a is formed on the upper layer of the first interlayer insulating film 41. The lower electrode layer 4a is formed in a substantially L-shape extending along the scanning line 3a and the data line 6a with a position where the scanning line 3a and the data line 6a intersect as a base point. The lower electrode layer 4a is made of a conductive polysilicon film, a metal silicide film, a metal film, or the like, and is electrically connected to the drain region 1c through the contact hole 7c.

  A translucent dielectric layer 42 made of a silicon nitride film or the like is formed on the upper layer side of the lower electrode layer 4a. A capacitor line 5b (upper electrode layer) is formed on the upper side of the dielectric layer 42 so as to face the lower electrode layer 4a with the dielectric layer 42 interposed therebetween. The capacitor line 5b, the dielectric layer 42, and the lower electrode are formed. A storage capacitor 55 is formed by the layer 4a. The capacitor line 5b is made of a conductive polysilicon film, a metal silicide film, a metal film, or the like. Here, the lower electrode layer 4a, the dielectric layer 42, and the capacitor line 5b (upper electrode layer) are formed on the upper layer side of the pixel transistor 30 and overlap the pixel transistor 30 in plan view. Therefore, the storage capacitor 55 is formed on the upper layer side of the pixel transistor 30 and overlaps at least the pixel transistor 30 in plan view.

  A translucent second interlayer insulating film 43 made of a silicon oxide film or the like is formed on the upper side of the capacitor line 5b, and a data line 6a and a drain electrode 6b are formed on the upper layer of the second interlayer insulating film 43. Yes. Data line 6a is electrically connected to source region 1b through contact hole 7a. The drain electrode 6b is electrically connected to the lower electrode layer 4a through the contact hole 7b, and is electrically connected to the drain region 1c through the lower electrode layer 4a. The data line 6a and the drain electrode 6b are made of a conductive polysilicon film, a metal silicide film, a metal film, or the like.

  A light-transmitting third interlayer insulating film 44 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the drain electrode 6b. In the third interlayer insulating film 44, a contact hole 7d leading to the drain electrode 6b is formed. Over the third interlayer insulating film 44, a pixel electrode 9a made of a light-transmitting conductive film such as an ITO (Indium Tin Oxide) film as a metal oxide layer is formed. The pixel electrode 9a is connected to the contact hole 7d. Is electrically connected to the drain electrode 6b. In this embodiment, the surface of the third interlayer insulating film 44 is a flat surface.

  Here, the dummy pixel electrode 9b (not shown in FIG. 3) described with reference to FIG. 2B is formed on the surface of the third interlayer insulating film 44, and the dummy pixel electrode 9b is The light-transmitting conductive film is formed simultaneously with the pixel electrode 9a.

An alignment film 16 is formed on the surface of the pixel electrode 9a. The alignment film 16 is made of a resin film such as polyimide or an oblique deposition film such as a silicon oxide film. In this embodiment, the alignment film 16 is an obliquely deposited film of SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ or the like. A transparent protective film 17 such as a silicon oxide film or a silicon nitride film is formed between the alignment film 16 and the pixel electrode 9a. The protective film 17 has a flat surface, and fills the recesses formed between the pixel electrodes 9a. Therefore, the alignment film 16 is formed on the flat surface of the protective film 17.

In the second substrate 20, a translucent conductive film such as an ITO film is formed on the surface of the translucent substrate body 20 w such as a quartz substrate or a glass substrate on the liquid crystal layer 50 side (a surface facing the first substrate 10). A common electrode 21 is formed, and an alignment film 26 is formed so as to cover the common electrode 21. Similar to the alignment film 16, the alignment film 26 is made of a resin film such as polyimide or an oblique deposition film such as a silicon oxide film. In this embodiment, the alignment film 26 is an obliquely deposited film such as SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O _5. A protective film 27 such as a silicon oxide film or a silicon nitride film is formed between the alignment film 26 and the common electrode 21. The protective film 27 has a flat surface, and the alignment film 26 is formed on the flat surface. The alignment films 16 and 26 vertically align the nematic liquid crystal compound having negative dielectric anisotropy used for the liquid crystal layer 50, and the liquid crystal panel 100p operates as a normally black VA mode.

  Note that the data line driving circuit 101 and the scanning line driving circuit 104 described with reference to FIGS. 1 and 2 are complementary transistor circuits each including an N-channel driving transistor and a P-channel driving transistor. Etc. are configured. Here, the driving transistor is formed by utilizing a part of the manufacturing process of the pixel transistor 30. Therefore, the region where the data line driving circuit 101 and the scanning line driving circuit 104 are formed on the first substrate 10 also has a cross-sectional configuration substantially similar to the cross-sectional configuration shown in FIG.

(Manufacturing method of the liquid crystal device 100)
FIG. 4 is an explanatory diagram showing a manufacturing process of the liquid crystal device 100 according to Embodiment 1 of the present invention. FIG. 5 is an explanatory diagram of an electro-optical device substrate used for manufacturing the liquid crystal device 100 according to the first embodiment of the present invention. FIGS. 5 (a), 5 (b), and 5 (c) are single product sizes. FIG. 3 is an explanatory diagram of an electro-optical device substrate, a semiconductor wafer-like large electro-optical device substrate, and a rectangular large electro-optical device substrate.

  In order to manufacture the liquid crystal device 100 of this embodiment, as shown in FIGS. 2 and 4, after the formation process S1 of the pixel electrode 9a and the like is performed on the first substrate 10, alignment is performed by a printing method, spin coating, or the like. An alignment film forming step S2 for forming the film 16 is performed. Next, when the alignment film 16 is made of a polyimide film, a rubbing step S3 for the alignment film 16 of the first substrate 10 is performed. Next, a seal printing step S4 for applying the sealing material 107 is performed. The application of the sealing material 107 draws the sealing material 107 in a rectangular frame shape by relatively moving the nozzle and the first substrate 10 while projecting the sealing material from the nozzle.

  On the other hand, for the second substrate 20, after performing the formation step S11 of the common electrode 21 and the like, an alignment film formation step S12 for forming the alignment film 26 by a printing method, spin coating, or the like is performed. Next, when the alignment film 26 is made of a polyimide film, a rubbing step S13 for the alignment film 26 of the second substrate 20 is performed.

  Next, in the overlapping step S21, the first substrate 10 and the second substrate 20 are overlapped with the sealing material 107 interposed therebetween. Next, the seal material 107 is cured in the seal curing step S22. In the seal curing step, the sealing material 107 is cured by irradiating UV light or the like from the second substrate 20 side.

  Next, in the liquid crystal sealing step S <b> 23, after the liquid crystal is injected into the inside of the sealing material 107 from the interrupted portion of the sealing material 107, the interrupted portion is sealed with the sealing material 105. In addition, after forming the sealing material 107 on the first substrate 10, liquid crystal is dropped inside the sealing material 107, and then the first substrate 10 and the second substrate 20 are overlapped with the sealing material 107 interposed therebetween. Thereafter, the sealing material 107 may be cured. In the case of such a method, it is not necessary to provide an interrupted portion or the sealing material 105 for the sealing material 107.

  When the liquid crystal device 100 is manufactured by this method, as shown in FIG. 5A, one or both of the first substrate 10 and the second substrate 20 is a single-size electro-optic device substrate 10s (for a liquid crystal device). In some cases, the liquid crystal panel 100p is formed by performing the above-described process in the state of the single-sized electro-optic device substrate 10s. Further, as shown in FIGS. 5B and 5C, the above-described process is performed in the state of a large electro-optical device substrate 10 s in which a large number of them can be obtained as one or both of the first substrate 10 and the second substrate 20. After forming a large panel structure, a plurality of single-size liquid crystal panels 100p may be cut out from the large panel structure. In this case, in the large electro-optical device substrate 10s, the region where the first substrate 10 or the second substrate 20 is cut out (the region indicated by the one-dot chain line in FIGS. 5B and 5C) is the effective region 10y. The surrounding portion is a material removal region 10z that is removed when the electro-optical device substrate 10s is cut. The large electro-optical device substrate 10s shown in FIG. 5B has a shape in which an orientation flat is formed on a disk-like substrate, similar to a semiconductor wafer, and the large electric substrate shown in FIG. The optical device substrate 10s has a quadrangular shape. In the following description, the electro-optical device substrate 10s will be described regardless of the size and whether the obtained substrate is the first substrate 10 or the second substrate 20.

(Detailed description of steps S1 and S11)
FIG. 6 is an explanatory diagram illustrating a process of forming a photosensitive resin layer in a predetermined region on the electro-optical device substrate 10s in the method for manufacturing the liquid crystal device 100 according to the first embodiment of the present invention. In addition, in FIG. 6, illustration is abbreviate | omitted about the lower layer side from the translucent film | membrane. Further, in FIG. 6, the exposed portion of the photosensitive resin layer is given a diagonal line rising to the right.

  The steps described below include a step of forming a contact hole in a light transmissive interlayer insulating film (light transmissive film) in the first substrate 10, and a light transmissive pixel electrode 9 a (light transmissive film) in the first substrate 10. In the step of forming, the step of forming the translucent common electrode 21 (translucent film) on the second substrate 20, etc., it is used to form a resist mask made of a photosensitive resin layer on the surface of the translucent film. . More specifically, in the process described below, when manufacturing the liquid crystal device 100 of the present embodiment, among the processes shown in FIG. 5, the formation process S1 of the pixel electrode 9a and the like and the formation process S11 of the common electrode 21 and the like. In this method, after a photosensitive resin layer is formed in a predetermined region on the electro-optical device substrate 10s, the photosensitive resin layer is used as a step of exposing and developing.

  Here, as illustrated in FIG. 6A, the electro-optical device substrate 10 s is chamfered at the edge, and includes the first inclined end surface 10 i at the edge on the one surface 10 g side, and the other surface. A second inclined end face 10j is provided at the edge on the 10h side. For this reason, the end portion of the electro-optical device substrate 10s includes the first inclined end surface 10i, the second inclined end surface 10j, and the one surface 10g and the other surface 10h between the first inclined end surface 10i and the second inclined end surface 10j. And an outer peripheral end face 10k orthogonal to the front end.

  For example, in manufacturing a resist mask for patterning the translucent film 8 on the electro-optical device substrate 10s having such a configuration, in this embodiment, the first inclined end surface 10i of the electro-optical device substrate 10s is shielded in advance. A light shielding film forming step for forming the film 85 is performed. In this embodiment, the light shielding film 85 is made of a light reflecting film 85a such as an aluminum film. In order to form the light shielding film 85, a light shielding film 85 made of a light reflecting film 85a such as an aluminum film is formed on the entire one surface 10g including the first inclined end face 10i, and then a resist mask is formed on the surface of the light shielding film 85. In this state, the light shielding film 85 is etched to selectively form the light shielding film 85 on the first inclined end face 10i. In this embodiment, the light shielding film 85 is formed on the first inclined end surface 10i on the one surface 10g side, and is adjacent to the first inclined end surface 10i on the surface connected to the first inclined end surface 10i via the corner portion 10f. The region 10r is also formed. Next, the translucent film 8 is formed on the entire surface of the one surface 10g of the electro-optical device substrate 10s by sputtering, vapor deposition, CVD, or the like.

  Next, in the photosensitive resin layer forming step, the uncured photosensitive resin layer 80 is applied to the one surface 10g of the electro-optical device substrate 10s by spin coating or the like. As a result, at the end portion of the electro-optical device substrate 10s, the photosensitive resin layer 80 is thickly formed on the first inclined end surface 10i due to the influence of the concave portion or the liquid pool caused by the first inclined end surface 10i.

  Next, as illustrated in FIGS. 6B, 6 </ b> C, and 6 </ b> D, an exposure development process is performed in which the photosensitive resin layer 80 is exposed and developed to pattern the photosensitive resin layer 80. As this exposure and development process, in this embodiment, as shown in FIG. 6B, first, an end face for exposing in advance the photosensitive resin layer 80 formed on the first inclined end face 10i via the light shielding member 87 or the like. Perform exposure. Next, as shown in FIG. 6C, patterning exposure is performed to selectively expose a portion of the photosensitive resin layer 80 to be removed through an exposure mask 88 having a predetermined mask pattern. Do. Note that the end face exposure and the patterning exposure may be interchanged, and the end face exposure may be performed after the patterning exposure. Next, when the photosensitive resin layer 80 is developed, a resist mask 81 is formed by the remaining photosensitive resin layer 80 as shown in FIG.

  Therefore, when etching is performed with the resist mask 81 formed on the light-transmitting film 8, the light-transmitting film 8 overlapping the opening of the resist mask 81 is removed as shown in FIG. The translucent film 8a remains only in the region that overlaps.

  In this method of manufacturing the liquid crystal device 100, in this embodiment, in the light shielding film forming step before the exposure and development step, the light reflecting film 85a is formed on the first inclined end surface 10i and the portion 10r adjacent to the first inclined end surface 10i. A light shielding film 85 is formed. For this reason, in the exposure shown in FIGS. 6B and 6C, the light L1 irradiated toward the first inclined end face 10i is blocked by the light-shielding film 85, and therefore, inside the electro-optical device substrate 10s. Not incident. In this embodiment, since the light shielding film 85 is made of a light reflecting film, the light L1 traveling toward the first inclined end face 10i is reflected by the light shielding film 85 and again on the first inclined end face 10i as indicated by an arrow L2. The photosensitive resin layer 80 is exposed.

  The light shielding film 85 is configured to be removed at the same time when the light transmissive film 8 is etched, to be removed in a step different from the step of etching the light transmissive film 8, and to the first inclined end face 10i. Any of the configurations in which the film 85 is left as it is may be used. Further, when the light shielding film 85 remains on the first inclined end surface 10i even after the current light-transmitting film 8 is etched, the light shielding film 85 is formed again after a photosensitive resin layer is formed in a later step. You may use as it is, when exposing and developing.

(Main effects of this form)
As described above, in the liquid crystal device 100 of the present embodiment, in forming the photosensitive resin layer 80 in the predetermined region on the one surface 10g side of the electro-optical device substrate 10s, in the light-shielding film forming step, for the electro-optical device. A light shielding film 85 is formed on the first inclined end surface 10i formed on the edge on the one surface 10g side of the substrate 10s. Then, in the photosensitive resin layer forming step, the positive type photosensitive resin layer 80 is applied to the one surface 10g side of the electro-optical device substrate 10s, and then the photosensitive resin layer 80 is exposed and developed in the exposure development step. Accordingly, when the exposure is performed, the light traveling toward the first inclined end surface 10i is blocked by the light shielding film 85, and therefore does not enter the electro-optical device substrate 10s from the first inclined end surface 10i. Therefore, it is possible to prevent the light incident on the electro-optical device substrate 10s from the first inclined end face 10i from being reflected by the second inclined end face 10j and exposing an extra portion of the photosensitive resin layer 80. Therefore, even when the electro-optical device substrate 10s having the first inclined end surface 10i and the second inclined end surface 10j formed on the edge is used, the photosensitive resin layer 80 ( The resist mask 81) can be reliably formed.

  In the present embodiment, the light shielding film 85 is made of a light reflecting film 85a. Therefore, the light traveling toward the first inclined end surface 10i is reflected by the light shielding film 85 and again exposes the photosensitive resin layer 80 on the first inclined end surface 10i. Therefore, even if the photosensitive resin layer 80 on the first inclined end surface 10i is thick, the photosensitive resin layer 80 on the first inclined end surface 10i can be reliably exposed, and after development, the photosensitive resin layer 80 is photosensitive from the first inclined end surface 10i. The resin layer 80 can be reliably removed.

  Further, in this embodiment, the light shielding film 85 is formed on the first inclined end surface 10i on the one surface 10g side, and the first inclined end surface 10i on the surface connected to the first inclined end surface 10i via the corner portion 10f. It is also formed in a region 10r adjacent to. Therefore, even if the photosensitive resin layer 80 on the first inclined end surface 10i and the photosensitive resin layer 80 in the vicinity of the first inclined end surface 10i are thick, the photosensitive resin layer 80 on the first inclined end surface 10i, and the first The photosensitive resin layer 80 in the vicinity of the inclined end face 10i can be reliably exposed. Therefore, after development, the photosensitive resin layer 80 can be reliably removed from the first inclined end face 10i and from the vicinity of the first inclined end face 10i.

[Variation 1 of Embodiment 1]
According to the present invention, in the exposure / development process, light incident on the electro-optical device substrate 10s from the first inclined end surface 10i is reflected by the second inclined end surface 10j to expose an extra portion of the photosensitive resin layer 80. Therefore, the exposure amount during the patterning exposure may be increased. Therefore, although the end face exposure and the patterning exposure are performed in the first embodiment, the thick photosensitive resin layer 80 formed on the first inclined end face 10i is not subjected to the end face exposure and is subjected to the patterning exposure. May be exposed and removed by development.

[Modification 2 of Embodiment 1]
In the first embodiment, the step of removing the thick photosensitive resin layer 80 formed on the first inclined end surface 10i with an organic solvent was not performed, but the photosensitive resin layer 80 formed on the first inclined end surface 10i was not performed. You may perform the process of removing with an organic solvent. That is, according to the present invention, in the exposure and development process, the light incident on the inside of the electro-optical device substrate 10s from the first inclined end surface 10i is reflected by the second inclined end surface 10j, and an extra portion of the photosensitive resin layer 80 is provided. Therefore, the exposure amount during the patterning exposure may be increased. Therefore, even if the step of removing the photosensitive resin layer 80 formed on the first inclined end face 10i with an organic solvent is performed, the first inclined end face 10i described with reference to FIG. The thick photosensitive resin layer 80w in the region 10r adjacent to can be reliably exposed and removed by development.

  In the first embodiment, the light shielding film 85 is formed on the first inclined end face 10i and also in the region 10r adjacent to the first inclined end face 10i on the one surface 10g side. Therefore, when the step of removing the photosensitive resin layer 80 formed on the first inclined end surface 10i with an organic solvent is performed, the photosensitive resin layer 80w in the region 10r adjacent to the first inclined end surface 10i (FIG. 10A The thick photosensitive resin layer 80 can be exposed by reflection on the light-shielding film 85 (light reflecting film 85a) even if the thickness is increased. Therefore, the thick photosensitive resin layer 80 in the region 10r adjacent to the first inclined end face 10i can be reliably exposed and removed by development without significantly increasing the exposure amount in the patterning exposure.

[Embodiment 2]
FIG. 7 is an explanatory diagram illustrating a process of forming a photosensitive resin layer in a predetermined region on the electro-optical device substrate 10s in the method for manufacturing the liquid crystal device 100 according to the second embodiment of the present invention. In FIG. 7, the illustration of the lower layer side from the light-transmitting film is omitted. Further, in FIG. 7, the exposed portion of the photosensitive resin layer is given a diagonal line that rises to the right. In addition, since the basic configuration of the present embodiment is substantially the same as that of the first embodiment, common portions are denoted by the same reference numerals and description thereof is omitted.

  Also in this embodiment, as in Embodiment 1, the process described below is a process of forming a contact hole in a light-transmitting interlayer insulating film (light-transmitting film) in the first substrate 10, and a light-transmitting process in the first substrate 10. Photosensitive resin layer 80 on the surface of the light-transmitting film 8 in the step of forming the transparent pixel electrode 9a (light-transmitting film), the step of forming the light-transmitting common electrode 21 (light-transmitting film) on the second substrate 20, and the like. This is used to form a resist mask 81 made of More specifically, in the process described below, when manufacturing the liquid crystal device 100 of the present embodiment, among the processes shown in FIG. 4, the formation process S1 of the pixel electrode 9a and the like and the formation process S11 of the common electrode 21 and the like. In this method, after a photosensitive resin layer is formed in a predetermined region on the electro-optical device substrate 10s, the photosensitive resin layer is used as a step of exposing and developing.

  Also in this embodiment, as in the first embodiment, the electro-optical device substrate 10 s is chamfered on the edge as shown in FIG. 7A, and is formed on the edge on the one surface 10 g side. The first inclined end surface 10i is provided, and the second inclined end surface 10j is provided at the end edge on the other surface 10h side. For this reason, the end portion of the electro-optical device substrate 10s includes the first inclined end surface 10i, the second inclined end surface 10j, and the one surface 10g and the other surface 10h between the first inclined end surface 10i and the second inclined end surface 10j. And an outer peripheral end face 10k orthogonal to the front end.

  For example, in manufacturing the resist mask 81 for patterning the light-transmitting film 8 on the electro-optical device substrate 10s having such a configuration, in this embodiment as well, the electro-optical device substrate 10s is previously provided in the same manner as in the first embodiment. A light shielding film forming step of forming a light shielding film 85 on the first inclined end face 10i is performed. In this embodiment, the light shielding film 85 is made of a light absorption film 85b such as a titanium nitride film. In order to form the light shielding film 85, a light shielding film 85 made of a light absorbing film 85b such as a titanium nitride film is formed on the entire one surface 10g including the first inclined end face 10i, and then a resist is formed on the surface of the light shielding film 85. A mask is formed, and in this state, the light shielding film 85 is etched to selectively form the light shielding film 85 on the first inclined end face 10i. In this embodiment, the light shielding film 85 is formed on the first inclined end surface 10i on the one surface 10g side, and is adjacent to the first inclined end surface 10i on the surface connected to the first inclined end surface 10i via the corner portion 10f. The region 10r is also formed. Next, the translucent film 8 is formed on the entire surface of the one surface 10g of the electro-optical device substrate 10s by sputtering, vapor deposition, CVD, or the like.

  Next, in the photosensitive resin layer forming step, the uncured photosensitive resin layer 80 is applied to the one surface 10g of the electro-optical device substrate 10s by spin coating or the like. As a result, at the end portion of the electro-optical device substrate 10s, the photosensitive resin layer 80 is thickly formed on the first inclined end surface 10i due to the influence of the concave portion or the liquid pool caused by the first inclined end surface 10i.

  Next, as shown in FIGS. 7B, 7 </ b> C, and 7 </ b> D, an exposure development process is performed in which the photosensitive resin layer 80 is exposed and developed to pattern the photosensitive resin layer 80. As this exposure and development process, in this embodiment as well, as in the first embodiment, as shown in FIG. 7B, the photosensitive resin layer 80 formed on the first inclined end surface 10i via the light shielding member 87 and the like is formed. An end face exposure is performed in advance. Next, as shown in FIG. 7C, patterning exposure is performed to selectively expose a portion of the photosensitive resin layer 80 to be removed through an exposure mask 88 having a predetermined mask pattern. Do. Note that the end face exposure and the patterning exposure may be interchanged, and the end face exposure may be performed after the patterning exposure. Next, when the photosensitive resin layer 80 is developed, a resist mask 81 is formed by the remaining photosensitive resin layer as shown in FIG.

  Therefore, if etching is performed with the resist mask 81 formed on the light-transmitting film 8, the light-transmitting film 8 overlapping the opening of the resist mask 81 is removed as shown in FIG. The translucent film 8a remains only in the region that overlaps.

  In this method of manufacturing the liquid crystal device 100, in this embodiment, in the light shielding film forming step before the exposure and development step, the light absorbing film 85b is formed on the first inclined end surface 10i and the portion 10r adjacent to the first inclined end surface 10i. A light shielding film 85 is formed. For this reason, in the exposure shown in FIGS. 7B and 7C, the light L1 irradiated toward the first inclined end face 10i is blocked by the light-shielding film 85, and therefore, inside the electro-optical device substrate 10s. Not incident. Therefore, it is possible to prevent the light incident on the electro-optical device substrate 10s from the first inclined end face 10i from being reflected by the second inclined end face 10j and exposing an extra portion of the photosensitive resin layer 80. Therefore, even when the electro-optical device substrate 10s having the first inclined end surface 10i and the second inclined end surface 10j formed on the edge is used, the photosensitive resin layer 80 is formed in a predetermined region on the electro-optical device substrate 10s. Can be reliably formed.

  The light shielding film 85 is configured to be removed at the same time when the light transmissive film 8 is etched, to be removed in a step different from the step of etching the light transmissive film 8, and to the first inclined end face 10i. Any of the configurations in which the film 85 is left as it is may be used. In addition, when the light shielding film 85 remains on the first inclined end face 10i even after the light transmissive film 8 is etched, the light shielding film 85 is subjected to exposure development after forming a photosensitive resin layer again in a subsequent process. You may use it as it is.

[Modification 1 of Embodiment 2]
According to the present invention, in the exposure / development process, light incident on the electro-optical device substrate 10s from the first inclined end surface 10i is reflected by the second inclined end surface 10j to expose an extra portion of the photosensitive resin layer 80. Therefore, the exposure amount during the patterning exposure may be increased. Therefore, although the end face exposure and the patterning exposure are performed in the second embodiment, the thick photosensitive resin layer 80 formed on the first inclined end face 10i at the time of the patterning exposure without performing the end face exposure. May be exposed and removed by development.

[Modification 2 of Embodiment 2]
In the first embodiment, the step of removing the thick photosensitive resin layer 80 formed on the first inclined end surface 10i with an organic solvent was not performed, but the photosensitive resin layer 80 formed on the first inclined end surface 10i was not performed. You may perform the process of removing with an organic solvent. That is, according to the present invention, in the exposure and development process, the light incident on the inside of the electro-optical device substrate 10s from the first inclined end surface 10i is reflected by the second inclined end surface 10j, and an extra portion of the photosensitive resin layer 80 is provided. Therefore, the exposure amount during the patterning exposure may be increased. Therefore, even if the step of removing the photosensitive resin layer 80 formed on the first inclined end face 10i with an organic solvent is performed, the first inclined end face 10i described with reference to FIG. The thick photosensitive resin layer 80w in the region 10r adjacent to can be reliably exposed and removed by development.

[Other embodiments]
In the first and second embodiments, the case where the photosensitive resin layer is exposed and developed to form a resist mask is exemplified. However, when the photosensitive resin is formed as an interlayer insulating film on the electro-optical device substrate 10s. The present invention may be applied. The process in this case is expressed as an aspect in which the light-transmitting film 8 is omitted from FIGS. 6 and 7. In the above-described embodiment, the method for manufacturing the transmissive liquid crystal device 100 is illustrated, but the present invention may be applied to the method for manufacturing the reflective liquid crystal device 100.

[Example of mounting on electronic devices]
An electronic apparatus to which the liquid crystal device 100 according to the above-described embodiment is applied will be described. FIG. 8 is a schematic configuration diagram of a projection display device using the liquid crystal device 100 to which the present invention is applied. FIGS. 8A and 8B are each a projection display using the transmissive liquid crystal device 100. FIG. 2 is an explanatory diagram of the device and an explanatory diagram of a projection display device using the reflective liquid crystal device 100.

(First example of projection display device)
A projection display device 110 shown in FIG. 8A is a so-called projection type projection display device that irradiates light onto a screen 111 provided on the viewer side and observes the light reflected by the screen 111. . The projection display device 110 includes a light source unit 130 including a light source 112, dichroic mirrors 113 and 114, liquid crystal light valves 115 to 117 (liquid crystal device 100), a projection optical system 118, a cross dichroic prism 119, and a relay. System 120.

  The light source 112 is composed of an ultrahigh pressure mercury lamp that supplies light including red light, green light, and blue light. The dichroic mirror 113 is configured to transmit red light from the light source 112 and reflect green light and blue light. The dichroic mirror 114 is configured to transmit blue light and reflect green light among the green light and the blue light reflected by the dichroic mirror 113. Thus, the dichroic mirrors 113 and 114 constitute a color separation optical system that separates the light emitted from the light source 112 into red light, green light, and blue light.

  Here, between the dichroic mirror 113 and the light source 112, an integrator 121 and a polarization conversion element 122 are sequentially arranged from the light source 112. The integrator 121 is configured to uniformize the illuminance distribution of the light emitted from the light source 112. Further, the polarization conversion element 122 is configured to change the light from the light source 112 into polarized light having a specific vibration direction such as s-polarized light.

  The liquid crystal light valve 115 is a transmissive liquid crystal device 100 that modulates red light transmitted through the dichroic mirror 113 and reflected by the reflection mirror 123 in accordance with an image signal. The liquid crystal light valve 115 includes a λ / 2 phase difference plate 115a, a first polarizing plate 115b, a liquid crystal panel 115c, and a second polarizing plate 115d. Here, the red light incident on the liquid crystal light valve 115 remains s-polarized light because the polarization of the light does not change even if it passes through the dichroic mirror 113.

  The λ / 2 phase difference plate 115a is an optical element that converts s-polarized light incident on the liquid crystal light valve 115 into p-polarized light. The first polarizing plate 115b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 115c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 115d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 115 is configured to modulate the red light in accordance with the image signal and to emit the modulated red light toward the cross dichroic prism 119.

  Note that the λ / 2 phase difference plate 115a and the first polarizing plate 115b are disposed in contact with a light-transmitting glass plate 115e that does not convert polarized light, and the λ / 2 phase difference plate 115a and the first polarizing plate 115b. It is possible to avoid distortion of 115b due to heat generation.

  The liquid crystal light valve 116 is a transmissive liquid crystal device 100 that modulates green light reflected by the dichroic mirror 114 after being reflected by the dichroic mirror 113 in accordance with an image signal. Similarly to the liquid crystal light valve 115, the liquid crystal light valve 116 includes a first polarizing plate 116b, a liquid crystal panel 116c, and a second polarizing plate 116d. Green light incident on the liquid crystal light valve 116 is s-polarized light that is reflected by the dichroic mirrors 113 and 114 and then incident. The first polarizing plate 116b is a polarizing plate that blocks p-polarized light and transmits s-polarized light. The liquid crystal panel 116c is configured to convert s-polarized light into p-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. The second polarizing plate 116d is a polarizing plate that blocks s-polarized light and transmits p-polarized light. Accordingly, the liquid crystal light valve 116 is configured to modulate green light in accordance with the image signal and to emit the modulated green light toward the cross dichroic prism 119.

  The liquid crystal light valve 117 is a transmissive liquid crystal device 100 that modulates blue light reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114 and then through the relay system 120 in accordance with an image signal. Similarly to the liquid crystal light valves 115 and 116, the liquid crystal light valve 117 includes a λ / 2 retardation film 117a, a first polarizing plate 117b, a liquid crystal panel 117c, and a second polarizing plate 117d. Here, since the blue light incident on the liquid crystal light valve 117 is reflected by the two reflecting mirrors 125a and 125b described later of the relay system 120 after being reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114, the s-polarized light is reflected. It has become.

  The λ / 2 phase difference plate 117a is an optical element that converts s-polarized light incident on the liquid crystal light valve 117 into p-polarized light. The first polarizing plate 117b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 117c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 117d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Accordingly, the liquid crystal light valve 117 is configured to modulate blue light in accordance with an image signal and to emit the modulated blue light toward the cross dichroic prism 119. The λ / 2 phase difference plate 117a and the first polarizing plate 117b are disposed in contact with the glass plate 117e.

  The relay system 120 includes relay lenses 124a and 124b and reflection mirrors 125a and 125b. The relay lenses 124a and 124b are provided to prevent light loss due to a long blue light path. Here, the relay lens 124a is disposed between the dichroic mirror 114 and the reflection mirror 125a. The relay lens 124b is disposed between the reflection mirrors 125a and 125b. The reflection mirror 125a is disposed so as to reflect the blue light transmitted through the dichroic mirror 114 and emitted from the relay lens 124a toward the relay lens 124b. The reflection mirror 125b is arranged to reflect the blue light emitted from the relay lens 124b toward the liquid crystal light valve 117.

  The cross dichroic prism 119 is a color combining optical system in which two dichroic films 119a and 119b are arranged orthogonally in an X shape. The dichroic film 119a is a film that reflects blue light and transmits green light, and the dichroic film 119b is a film that reflects red light and transmits green light. Therefore, the cross dichroic prism 119 is configured to combine the red light, the green light, and the blue light modulated by the liquid crystal light valves 115 to 117 and emit the resultant light toward the projection optical system 118.

  Note that light incident on the cross dichroic prism 119 from the liquid crystal light valves 115 and 117 is s-polarized light, and light incident on the cross dichroic prism 119 from the liquid crystal light valve 116 is p-polarized light. Thus, by making the light incident on the cross dichroic prism 119 into different types of polarized light, the light incident from the liquid crystal light valves 115 to 117 in the cross dichroic prism 119 can be synthesized. Here, in general, the dichroic films 119a and 119b are excellent in the reflection characteristics of s-polarized light. Therefore, red light and blue light reflected by the dichroic films 119a and 119b are s-polarized light, and green light transmitted through the dichroic films 119a and 119b is p-polarized light. The projection optical system 118 has a projection lens (not shown) and is configured to project the light combined by the cross dichroic prism 119 onto the screen 111.

(Second example of projection display device)
In the projection display apparatus 1000 shown in FIG. 8B, the light source unit 890 includes a polarization illumination apparatus 800 in which a light source 810, an integrator lens 820, and a polarization conversion element 830 are arranged along the system optical axis L. . The light source unit 890 also reflects the S-polarized light beam emitted from the polarization illumination device 800 along the system optical axis L by the S-polarized light beam reflecting surface 841 and the S-polarized light beam of the polarized beam splitter 840. Of the light reflected from the reflecting surface 841, the dichroic mirror 842 that separates the blue light (B) component and the red light (R) component of the luminous flux after the blue light is separated are separated. And a dichroic mirror 843.

  The projection display device 1000 includes three reflective liquid crystal devices 100 (liquid crystal devices 100R, 100G, and 100B) on which each color light is incident, and the light source unit 890 includes three liquid crystal devices 100 (liquid crystal devices 100R). , 100G, 100B).

  In the projection display apparatus 1000, the light modulated by the three liquid crystal devices 100R, 100G, and 100B is synthesized by the dichroic mirrors 842 and 843 and the polarization beam splitter 840, and then the synthesized light is projected by the projection optical system 850. Is projected onto a projection target member such as a screen 860.

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. .

(Other electronic devices)
As for the liquid crystal device 100 to which the present invention is applied, in addition to the electronic devices described above, mobile phones, personal digital assistants (PDAs), digital cameras, liquid crystal televisions, car navigation devices, video phones, POS terminals, You may use as a direct view type | mold display apparatus in electronic devices, such as an apparatus provided with the touch panel.

[Other electrical devices]
In the above-described embodiment, the liquid crystal device is exemplified as the electro-optical device. However, as long as a translucent substrate (electro-optical device substrate) is provided. The present invention is not limited to a liquid crystal device, but an organic electroluminescence device, a plasma display device, an electrophoretic display device, a device using electron emission (Field Emission Display), a method for manufacturing an electro-optical device such as DLP (Digital Light Processing). You may apply.

8.. Translucent film, 9 a... Pixel electrode, 10... First substrate, 10 a... Pixel area, 10 i .. First inclined end surface, 10 j. 20, second electrode, 21 ... common electrode, 50 ... liquid crystal layer, 80 ... photosensitive resin layer, 81 ... resist mask, 85 ... light shielding film, 85a ... light reflecting film, 85b ... Light absorbing film, 88 ... Exposure mask, 110, 1000 ... Projection type display device

Claims (7)

A light-shielding film is formed on the first inclined end surface of the first inclined end surface formed on the edge on one side of the substrate for translucent electro-optical devices and the second inclined end surface formed on the edge on the other surface side. Forming a light-shielding film,
A photosensitive resin layer forming step of applying a positive type photosensitive resin layer to the one surface side;
An exposure and development step of exposing and developing the photosensitive resin layer and patterning the photosensitive resin layer; and
A method for manufacturing an electro-optical device.   The method of manufacturing an electro-optical device according to claim 1, wherein the light shielding film is a light reflecting film.   The method of manufacturing an electro-optical device according to claim 1, wherein the light shielding film is a light absorption film.   In the exposure and development step, the photosensitive resin layer is used to expose the photosensitive resin layer formed on the first inclined end surface, and to expose the photosensitive resin using an exposure mask having a predetermined translucent pattern. The method for manufacturing an electro-optical device according to claim 1, wherein patterning exposure for exposing the resin layer is performed.   The said light shielding film formation process WHEREIN: In addition to a said 1st inclination end surface, the said light shielding film is formed to the surface which adjoins the said 1st inclination end surface through a corner | angular part on the said one surface side. The method for manufacturing an electro-optical device according to any one of 1 to 4.   6. The electro-optical device according to claim 1, wherein the electro-optical device substrate is used as at least one of a pair of liquid crystal device substrates facing each other through a liquid crystal layer in the liquid crystal device. Manufacturing method.   An electro-optical device manufactured by the method according to claim 1.

Images