JP2012070267A - High frequency signal processor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize miniaturization of a high frequency signal processor.SOLUTION: For example, a packaged high frequency front end module 9 is composed of semiconductor chips 31, 7, and 12 only. Electric power amplifiers 2a, 2b for respectively different bands and their output impedance adjustment circuits 41a, 41b are formed on the semiconductor chip 31. An antenna switch 62 which switches transmission and reception for each band is formed on the semiconductor chip 7. Low noise amplifiers 11a, 11b for each band are formed on the semiconductor chip 12. Outside of the package, low pass filters 5a, 5b for each band are connected in parallel between the antenna switch 62 and an antenna 8. Band pass filters 10a, 10b for each band are connected to output nodes of the low noise amplifiers 11a, 11b, respectively.

Description

  The present invention relates to a high-frequency signal processing device, and more particularly to a technique that is effective when applied to a high-frequency signal processing device serving as a high-frequency front end unit in a mobile phone.

  For example, Patent Document 1 discloses a multi-mode high-frequency circuit corresponding to W-CDMA (Wideband Code Division Multiple Access), GSM (Global System for Mobile communication), and DCS (Digital Cellular System). In FIG. 16 of this document, during transmission of GSM or DCS, a transmission signal from the power amplifier is transmitted to the antenna via the low-pass filter and the switch, and during reception, a reception signal from the antenna passes through the switch and the band-pass filter. Is transmitted. Also, during W-CDMA transmission, a transmission signal from the power amplifier is transmitted to the antenna via the duplexer and the switch, and during reception, a reception signal from the antenna is transmitted via the switch and the duplexer.

JP 2006-340257 A

  FIG. 1 is a block diagram showing a schematic configuration example of a high-frequency signal processing device studied as a premise of the present invention, and shows the periphery of a high-frequency front end of a mobile phone compatible with the GSM / DCS system. In FIG. 1, 1a and 1b are input impedance matching circuits of a power amplifier, 2a and 2b are transmission power amplifiers, and 3 is a semiconductor chip. 4a and 4b are output impedance matching circuits of the power amplifier, 5a and 5b are low-pass filters, 6 is an SP4T (Single pole 4 throw) type antenna switch, 7 is a semiconductor chip, and 8 is an antenna. Reference numeral 9 denotes a high-frequency front end module (or power amplifier module), which is packaged by sealing a wiring board (printed circuit board PCB) or the like with a resin or the like. 10a and 10b are band-pass filters, 11a and 11b are low-noise amplifiers for reception, and 12 is a semiconductor chip.

  The input impedance matching circuit 1, the transmission power amplifier 2, the output impedance matching circuit 41, the low pass filter 5, the band pass filter 10, and the reception low noise amplifier 11 are divided into a low frequency (GSM) band and a high frequency (DCS) band. Correspondingly, each pair is arranged, and those with “a” in the code are for the low frequency band and those with “b” are for the high frequency band. The input impedance matching circuits 1a and 1b and the power amplifiers 2a and 2b are integrated on the semiconductor chip 3, and the antenna switch 6 is integrated on the semiconductor chip 7. These semiconductor chips are mounted on the wiring board of the high-frequency front end module 9 together with the output impedance matching circuits 4a and 4b and the low-pass filters 5a and 5b. The output impedance matching circuits 4a and 4b and the low-pass filters 5a and 5b are composed of, for example, SMD (surface mounted device) parts and a metal film pattern on the wiring board. The low noise amplifiers 11a and 11b are integrated on the semiconductor chip 12, and the semiconductor chip 12 is mounted on a wiring board outside the high frequency front end module 9 together with the bandpass filters 10a and 10b.

  FIG. 2 is a block diagram showing a schematic configuration example of another high-frequency signal processing device studied as a premise of the present invention, and shows the periphery of the high-frequency front end in a mobile phone compatible with the W-CDMA system. The names of the parts indicated by reference numerals 1 to 12 are the same as those in FIG. 61 is an SP2T (Single pole 2 throw) type antenna switch, 13a and 13b are isolators, and 14a and 14b are duplexers. The parts indicated by reference numerals 1 to 12 have the same configuration and arrangement as in FIG. The antenna switch 61 has two reception terminals and one antenna terminal. The isolators 13a and 13b and the duplexers 14a and 14b are, for example, SMD components, and are disposed on the wiring board of the high-frequency front end module 9. As in the case of FIG. 1, those with “a” in the reference are for the low frequency band, and those with “b” are for the high frequency band. The low noise amplifiers 11 a and 11 b are integrated on the semiconductor chip 12. The semiconductor chip 12 is arranged on the wiring board outside the high-frequency front end module 9 together with the bandpass filters 10a and 10b, as in the case of FIG.

  Here, when the configuration examples as shown in FIGS. 1 and 2 are used, for example, the following problems may occur. In order to reduce the size of the high-frequency signal processing device, it is desirable to integrate all components on a single or a plurality of semiconductor chips. In addition, by doing so, the wiring on the wiring board can be facilitated and the wiring board can be deleted in some cases, and the package assembly process can be simplified, so that the manufacturing cost can be reduced. However, practically, since the high-frequency signal processing device includes circuits and components that are difficult to integrate on a semiconductor chip, this is difficult. As shown in FIG. 1 and FIG. 2, the power amplifier, its input impedance matching circuit, antenna switch, and low noise amplifier of the high frequency front end module 9 are usually formed on a semiconductor chip. A circuit, a low-pass filter, a band-pass filter, a duplexer, and the like are formed on the wiring board using SMD components. For example, when a silicon chip that can be easily integrated and reduced in cost is used as a semiconductor chip, it is not easy to make the filter circuit on-chip particularly in terms of noise characteristics and loss characteristics of the silicon substrate. As a result, it is difficult to reduce the size of the high-frequency signal processing device. In addition, the assembly process becomes complicated and the manufacturing cost increases.

  Therefore, in order to further reduce the size and cost of the configuration example of FIG. 1 and FIG. 2, only the components that can be integrated on the semiconductor chip are packaged as the high-frequency front end module 9, and other components are arranged outside the package. It is possible to do. 3 to 5 are block diagrams showing schematic configuration examples of still another high-frequency signal processing device studied as a premise of the present invention. 3 and 4 show the periphery of the high-frequency front end of the mobile phone that supports the GSM / DCS system, and FIG. 5 shows the periphery of the high-frequency front end of the mobile phone that supports the W-CDMA system. .

  First, in FIG. 3, the names of portions indicated by reference numerals 1 to 12 are the same as those in FIG. In FIG. 3, the three semiconductor chips 3, 7, and 12 in FIG. 1 are mounted on one wiring board to constitute a packaged high frequency front end module 9. Further, the output impedance matching circuits 4a and 4b, the low-pass filters 5a and 5b, and the reception band-pass filters 10a and 10b in FIG. 1 are arranged outside the package. 4, unlike FIG. 3, the output impedance matching circuits 41a and 41b are integrated on the semiconductor chip 31 on which the transmission power amplifiers 2a and 2b and the like are formed, whereby the external output impedance matching circuit 4a in FIG. , 4b are deleted. On the other hand, in FIG. 5, the three semiconductor chips 3, 7, and 12 in FIG. 2 are packaged on the wiring board of the high-frequency front end module 9, and are difficult to integrate on the semiconductor chip, isolators 13 a, 13 b, Duplexers 14a and 14b and reception band-pass filters 10a and 10b are arranged outside the package. At this time, as in the case of FIG. 4, the output impedance matching circuits 41 a and 41 b are integrated on the semiconductor chip 31.

  As described above, when the configuration examples of FIGS. 3 to 5 are used, the components in the high-frequency front-end module 9 are only semiconductor chips. Therefore, the wiring on the wiring board is simplified and, in some cases, the wiring board is reduced. This makes it possible to simplify the module assembly process. However, in these methods, for example, there are concerns about the following. That is, in the component arrangement in these configuration examples, the path of the high frequency signal from the component in the high frequency front end module (package) 9 through the component outside the package 9 to the component in the package 9 again. Exists. For example, in the case of FIG. 3, the antenna switch 6 in the package 9 is again passed from the power amplifiers 2a and 2b in the package 9 through the output impedance matching circuits 4a and 4b outside the package 9 and the low-pass filters 5a and 5b. And a path from the antenna switch 6 in the package 9 to the low-noise amplifiers 11a and 11b in the package 9 again through the band-pass filters 10a and 10b outside the package 9.

  Also in the case of FIG. 4, the route from the package 9 through the low-pass filters 5 a and 5 b to the package 9 again, and the route from the package 9 to the package 9 through the band-pass filters 10 a and 10 b again. Exists. Similarly, in the case of FIG. 5, the path from the package 9 through the isolators 13a and 13b and the duplexers 14a and 14b to the package 9 again, and the duplexers 14a and 14b and the bandpass filters 10a and 10b from the package 9 are connected. Then, there is a path that returns to the package 9 again. As described above, if there is a path for returning the wiring that has been taken out of the package 9 to the package 9 again, the arrangement of the semiconductor chip and the wiring becomes complicated. In addition, the number of semiconductor chips, wiring board pads, and package pins increases. As a result, it becomes an obstacle to miniaturization, cost reduction, and ease of design.

  The present invention has been made in view of the above, and one of its purposes is to realize miniaturization of a high-frequency signal processing device. The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of a typical embodiment will be briefly described as follows.

  The high-frequency signal processing device according to the present embodiment includes a first and second antenna switch circuit, a first and second power amplifier circuit, a first and second matching circuit, and first and second filters (for example, both low Pass filter). The first power amplifier circuit amplifies the first transmission signal, and the output signal is input to the first transmission node of the first antenna switch circuit after undergoing impedance matching by the first matching circuit. Sent from the antenna connection node. Similarly, the second power amplifier circuit amplifies the second transmission signal, and the output signal is input to the second transmission node of the second antenna switch circuit after impedance matching by the second matching circuit. From the second antenna connection node. In such a configuration, the high-frequency signal processing device is characterized in that the first filter is connected between the first antenna connection node and the antenna, and the second filter is connected between the second antenna connection node and the antenna. It has become.

  For example, when the first and second power amplifier circuits, the first and second matching circuits, and the first and second antenna switch circuits are realized in one package, the first and second filters are transmitted from the transmission node of the antenna switch circuit. By arranging on the antenna connection node side instead of the wiring side, it is possible to eliminate a wiring path that goes out of the package and returns to the package. As a result, the high-frequency signal processing device can be reduced in size and cost. The first and second matching circuits are preferably formed on the same semiconductor chip as the first and second power amplifier circuits. As a result, it is not necessary to mount passive components other than the semiconductor chip in the package, and the high-frequency signal processing device can be further reduced in size and cost.

  Of the inventions disclosed in the present application, the effects obtained by the representative embodiments will be briefly described. This makes it possible to reduce the size of the high-frequency signal processing device.

It is a block diagram which shows the schematic structural example of the high frequency signal processing apparatus examined as a premise of this invention. It is a block diagram which shows the schematic structural example of the other high frequency signal processing apparatus examined as a premise of this invention. It is a block diagram which shows the schematic structural example of the other high frequency signal processing apparatus examined as a premise of this invention. It is a block diagram which shows the schematic structural example of the other high frequency signal processing apparatus examined as a premise of this invention. It is a block diagram which shows the schematic structural example of the other high frequency signal processing apparatus examined as a premise of this invention. FIG. 21 is a block diagram illustrating a configuration example in which FIG. 20 is expanded in the high-frequency signal processing device according to the first embodiment of the present invention. It is a block diagram which shows the schematic structural example in the high frequency signal processing apparatus by Embodiment 3 of this invention. In the high frequency signal processing device according to the fourth embodiment of the present invention, it is a block diagram showing a schematic configuration example. It is a block diagram which shows the schematic structural example in the high frequency signal processing apparatus by Embodiment 5 of this invention. In the high frequency signal processing device according to Embodiment 6 of the present invention, FIG. In the high frequency signal processing device according to the eighth embodiment of the present invention, it is a block diagram showing a schematic configuration example thereof. It is a block diagram which shows the schematic structural example in the high frequency signal processing apparatus by Embodiment 9 of this invention. In the high frequency signal processing apparatus by Embodiment 2 of this invention, it is a block diagram which shows the schematic structural example. It is a block diagram which shows the schematic structural example in the high frequency signal processing apparatus by Embodiment 10 of this invention. FIG. 7 is a perspective view illustrating a schematic external example of a high-frequency front end module in the high-frequency signal processing device of FIG. 6. FIG. 10 is a perspective view illustrating a schematic external example of a high-frequency front end module in the high-frequency signal processing device of FIG. 9. FIG. 10 is a perspective view showing another schematic external example of the high-frequency front end module shown in FIG. 9 in the high-frequency signal processing device according to Embodiment 7 of the present invention. It is a perspective view which shows the schematic external example of the high frequency front end module in the high frequency signal processing apparatus of FIG. It is a figure explaining the influence of the branch path | route around the antenna in the high frequency signal processing apparatus by Embodiment 1 of this invention. 1 is a block diagram illustrating a schematic configuration example of a high-frequency signal processing device according to a first embodiment of the present invention. In the high frequency signal processing device according to Embodiment 11 of the present invention, it is a block diagram showing a schematic configuration example thereof. It is a block diagram which shows the schematic structural example in the high frequency signal processing apparatus by Embodiment 12 of this invention. FIG. 16 is a circuit diagram illustrating a schematic configuration example around an output impedance matching circuit in FIGS. 6 and 15.

  In the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments. However, unless otherwise specified, they are not irrelevant, and one is the other. Some or all of the modifications, details, supplementary explanations, and the like exist. Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and may be more or less than the specific number.

  Further, in the following embodiments, the constituent elements (including element steps and the like) are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say. Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted.

(Embodiment 1)
<< Basic configuration of high-frequency signal processing apparatus according to this embodiment (type 1) >>
FIG. 20 is a block diagram showing a schematic configuration example of the high-frequency signal processing device according to Embodiment 1 of the present invention. The high-frequency signal processing device shown in FIG. 20 has a configuration corresponding to, for example, one band (band) that performs communication using a TDD (Time Division Duplex) method, and includes a high-frequency front-end module 9 and a low-pass filter 5a. A band-pass filter 10 a and an antenna 8. The high-frequency front end module 9 has a configuration in which three semiconductor chips 34, 7, and 12 are mounted on a wiring board (printed circuit board PCB), and each semiconductor chip is appropriately connected via a wiring board or bonding wires. It has become. The high frequency front end module 9 is packaged by being sealed with a resin or the like. The low-pass filter 5a is typically an SMD component or the like in which an inductor or a capacitor is formed using multilayer ceramic technology, and the band-pass filter 10a is typically a SAW (Surface Acoustic Wave) filter or a dielectric filter. Etc.

  The semiconductor chip 34 includes an input impedance matching circuit 1a, a transmission power amplifier 2a having the output as an input, and an output impedance matching circuit 41a having the output as an input. The semiconductor chip 12 includes a reception low noise amplifier 11a. The semiconductor chip 7 includes one SPDT (Single poles double throw) type antenna switch 61 having a transmission terminal, a reception terminal, and an antenna terminal. An output node of the output impedance matching circuit 41a is connected to the transmission terminal of the antenna switch 61, and an input node of the reception low noise amplifier 11a is connected to the reception terminal. The antenna 8 is connected to the antenna terminal of the antenna switch 61 through the low-pass filter 5a. The band pass filter 10a is connected to the output node of the reception low noise amplifier 11a.

  At the time of transmission, a high frequency signal for transmission from a transmission mixer circuit or the like (not shown) is input to the power amplifier 2a via the input impedance matching circuit 1a, amplified by the power amplifier 2a, and then output impedance matching circuit 41a, antenna switch 61, and low-pass filter 5a. At this time, the output impedance matching circuit 41a matches the relatively low output impedance of the power amplifier 2a with the input impedance (such as 50Ω) of the antenna switch 61. The low-pass filter 5a reduces harmonic components that may be generated by the nonlinearity of the power amplifier 2a. In some cases, harmonic components generated by the antenna switch 61 are also reduced. On the other hand, at the time of reception, a high frequency signal for reception from the antenna 8 is input to the low noise amplifier 11a through the low pass filter 5a and the antenna switch 61. At this time, the low-pass filter 5a reduces harmonic components that may be included in the high-frequency signal for reception. The low noise amplifier 11a amplifies a high frequency signal for reception with low noise, and its output signal is limited to a necessary band via the band pass filter 10a, and then is supplied to a reception mixer circuit or the like (not shown). Is transmitted.

  In such a configuration, the main features of the high-frequency signal processing device according to the present embodiment are that on-chip components are integrated on a semiconductor chip, and the high-frequency front-end module (package) 9 is limited to the semiconductor chip as much as possible. The parts that are difficult to make on-chip are placed outside the package as surface mount parts, etc., and the connection relation of each part is devised so that the wiring coming out of the package does not return to the package again is there. Specific features are (1) the output impedance matching circuit 41a is on-chip using, for example, a transformer, and (2) the low-pass filter 5a is disposed between the antenna switch 61 and the antenna 8. is there. Further, it is also characterized in that (3) the band pass filter 10a is arranged on the output side of the low noise amplifier 11a.

  Here, regarding the above (3), normally, as shown in FIG. 1, the band-pass filter 10a is arranged on the input side of the low-noise amplifier 11a. This is to prevent the waves from entering the low noise amplifier 11a by removing the waves with the bandpass filter 10a. When a high-power interference wave is input to the low-noise amplifier 11a, there is a possibility that the amplification characteristic is distorted and the signal characteristic is deteriorated by exceeding the power range that can be amplified linearly. In the configuration example of FIG. 20, since the bandpass filter 10a is arranged on the output side of the low noise amplifier 11a, a large interference wave may enter the low noise amplifier. However, it is possible to suppress the deterioration of the signal characteristics by increasing the size of the low noise amplifier 11a and making it difficult to cause amplification distortion due to the input of an interference wave.

<< Basic configuration of high-frequency signal processing apparatus according to this embodiment (type 1 ') >>
FIG. 6 is a block diagram showing a configuration example in which FIG. 20 is expanded in the high-frequency signal processing device according to Embodiment 1 of the present invention. The high-frequency signal processing device shown in FIG. 6 has a configuration corresponding to, for example, two bands each performing communication by a TDD (Time Division Duplex) method, and seems to have two systems of the circuit configuration of FIG. This is a simple configuration example. One of the two bands (referred to as a low frequency band) is a band for GSM (Global System for Mobile Communications) having a transmission frequency of about 824 MHz to about 915 MHz and a reception frequency of about 869 MHz to about 960 MHz, for example. . The other of the two bands (referred to as a high frequency band) is, for example, a band for DCS (Digital Cellular System) having a transmission frequency of about 1710 MHz to about 1910 MHz and a reception frequency of about 1805 MHz to about 1990 MHz.

  The high-frequency signal processing device shown in FIG. 6 includes a high-frequency front end module 9 in which three semiconductor chips 31, 7, and 12 are mounted on a wiring board, two low-pass filters 5a and 5b, and two bands. Path filters 10a and 10b and an antenna 8 are provided. The high frequency front end module 9 is packaged by being sealed with a resin or the like. The semiconductor chip 31 has two circuit configurations in the semiconductor chip 34 of FIG. 20 described above, and includes two input impedance matching circuits 1a and 1b, transmission power amplifiers 2a and 2b, and output impedance matching circuits 41a and 41b. ing. Those with “a” in the code are for the low frequency band, and those with “b” are for the high frequency band. Similarly, the semiconductor chip 12 includes a low-frequency receiving low-noise amplifier 11a and a high-frequency receiving low-noise amplifier 11b.

  Further, the semiconductor chip 7 includes an antenna switch 62, and the antenna switch 62 includes two systems of SPDT type switches described in FIG. 20 corresponding to the low frequency band and the high frequency band. In other words, the antenna switch 62 includes two transmission terminals, two reception terminals, and two antenna terminals. One of the two transmission terminals is connected to the output node of the output impedance matching circuit 41a, and the other is connected to the output node of the output impedance matching circuit 41b. One of the two reception terminals is connected to the input node of the reception low noise amplifier 11a, and the other is connected to the input node of the reception low noise amplifier 11b. One of the two antenna terminals is connected to the antenna 8 via a low-frequency band low-pass filter 5a, and the other is commonly connected to the antenna 8 via a high-frequency band low-pass filter 5b. . A low-frequency bandpass filter 10a is connected to the output node of the reception low noise amplifier 11a, and a high-frequency bandpass filter 10b is connected to the output node of the reception low noise amplifier 11b.

  Thus, when the configuration example of FIG. 20 is expanded to two bands, in addition to the features described in FIG. 20, (4) the antenna switch 62 has two antenna terminals, and (5) Each antenna terminal is commonly connected to the antenna 8 via low-pass filters 5a and 5b. When the low frequency band and high frequency band described above are GSM and DCS, for example, the low pass filter 5b has a pass band that is approximately twice that of the low pass filter 5a.

<< Main effects of basic configuration (type 1 and 1 ') >>
As described above, for example, the following effects can be obtained by using the configuration examples of FIGS. First, the component mounting process on the high-frequency front end module 9 can be simplified only by die bonding and wire bonding. In some cases, a high-frequency front end module (package) can be configured without using a wiring board. As a result, the manufacturing cost can be reduced. Second, since there is no high-frequency signal line coming out of the package and returning into the package, wiring arrangement can be simplified and the package size can be reduced. That is, it is possible to reduce the size of the entire high-frequency signal processing apparatus including the high-frequency front end module 9 as well as the high-frequency front-end module 9. Third, since the wiring path to the high frequency front end module 9 is simplified, the design of the high frequency signal processing apparatus can be facilitated. This effect will be described in more detail below.

  First, regarding the first effect, as described above, all components mounted on the high-frequency front-end module (package) 9 are configured by semiconductor chips, and SMD components or the like are not mounted on the package. As a result, the soldering process for SMD components or the like can be eliminated from the process for mounting the component on the package, and the die bonding process for the semiconductor chip and the connection process between the semiconductor chips may be performed. When connecting between semiconductor chips, they are connected via a wiring board, or in some cases, without using a wiring board, they are connected via a bonding wire or a lead frame, or between semiconductor chips by a bonding wire. Direct connection is also possible. As a result, the manufacturing process can be simplified, and the manufacturing cost can be reduced. In addition, when a wiring board is used, SMD components or the like are not mounted, and thus the structure such as the number of wiring layers can be simplified. Further, instead of using a wiring board, for example, a lead frame may be used. As a result, the manufacturing cost can be further reduced.

  Next, regarding the second and third effects, as described above, the low-pass filter is disposed between the antenna switch and the antenna, not between the antenna switch and the output impedance matching circuit. Further, a low noise amplifier is mounted in the package, and a band pass filter is arranged on the output side instead of the input side of the low noise amplifier. Thus, there is no high-frequency signal line coming out of the package and returning into the package, the number of pads for drawing the wiring from the package can be reduced, and the arrangement of the wiring can be simplified. As a result, the package size can be reduced and the circuit design is facilitated. When the low noise amplifier is mounted on the package, the antenna switch and the low noise amplifier can be directly connected in a short distance. As a result, the fluctuation (noise) of the electromagnetic field that affects the connection wiring, that is, the input of the low noise amplifier can be reduced, so that the output noise of the low noise amplifier can be reduced.

  By the way, in the high frequency signal processing device according to the present embodiment, as shown in FIG. 6, two low pass filters for the low frequency band and the high frequency band are connected in parallel between the antenna switch and the antenna. become. As shown in FIG. 1 and the like, in the normal case, the signal is always branched by a switch (in some cases, a diplexer), but one of the purposes is to prevent a signal path having a dead end at the end. Because. In other words, in the case of a route configuration in which a dead-end route hangs on the route through which the signal is transmitted, the loss due to the dead-end route and the effect of the reflected wave from there being superimposed on the original signal have not been clarified, It was designed to avoid such a path configuration. On the other hand, when the high-frequency signal processing device according to the present embodiment is used, there is a branch of the signal path at a portion other than the switch, so that the path where the switch is turned on and the signal is transmitted and the path where the switch is turned off and the dead end is hung Will be included.

  Therefore, the influence of the configuration will be described with reference to FIG. FIG. 19 is a diagram for explaining the influence of the branch path around the antenna in the high-frequency signal processing device according to the first embodiment of the present invention, showing the signal path from the antenna to the antenna switch, Impedances at nodes A and B are shown by a Smith chart. In the figure, 5a and 5b are low-pass filters, 62 is an antenna switch, and 8 is an antenna. In the example of FIG. 19, for example, with transmission of a high frequency band, the transmission terminal and the antenna terminal are connected in one of the SPDT switches, and the antenna terminal is in an off state (high impedance state) in the other SPDT switch. . As a result, the antenna terminal on the other side of the SPDT switch becomes the end of the dead-end path. Here, since an off-state transistor constituting an antenna switch is actually connected to the end of this dead-end path, the dead-end path is equivalently terminated with a high impedance of a pure imaginary component. Will be.

  That is, since the impedance when the antenna switch side is viewed from the position of the node A is high impedance and has no real number component, it is stuck on the right side of the outer periphery as shown in A of the Smith chart. The impedance when the antenna switch side is viewed from the position of the node B is obtained by adding a low-pass filter to the impedance at the node A. The low-pass filter is composed of a shunt-connected capacitor and a series-connected inductance. Since the impedance at the node B has no real component in the impedance at the node A, even if a capacitance or inductance is added to the impedance at the node A, the impedance is a value close to the outer periphery of the Smith chart as shown in B of the Smith chart. . Therefore, the reflectance when the low-pass filter is viewed from the position of the node B is as high as 0.9 or more, and the signal power incident thereon is small. As a result, it is possible to suppress loss there and increase in signal phase shift due to superposition of reflected waves from the loss, so that the influence of the branch path is at a level with no problem. It was found by.

<< Outline example of basic configuration (Type 1 ') >>
FIG. 15 is a perspective view showing a schematic external example of a high-frequency front end module in the high-frequency signal processing device of FIG. The high-frequency front end module (package) 9 shown in FIG. 15 is actually sealed with a resin or the like, but the sealing material is omitted for easy understanding of the structure. The names of the parts indicated by the reference numerals in the figure are the same as those in FIG. 6 for those included in FIG. Otherwise, 91 is a wiring board (printed circuit board PCB), 15a and 15b are input pads to the package 9, 16a and 16b are for connecting the output impedance matching circuits 41a and 41b of the power amplifier and the transmission terminal of the antenna switch 62. The wires 17a and 17b are input / output pads for connecting the package 9 to the low-pass filters 5a and 5b. Reference numerals 18a and 18b denote output pads for connecting the low-noise amplifiers 11a and 11b to the band-pass filters 10a and 10b. Reference numerals 19a and 19b denote connection terminals for the antenna switch 62 and the low-noise amplifiers 11a and 11b. It is a wire. Those with “a” in the code are for the low frequency band, and those with “b” are for the high frequency band. All components in the package 9 are integrated on the three semiconductor chips 31, 7, and 12.

  The wiring board (printed circuit board PCB) 91 has a structure in which a dielectric layer such as ceramic and a wiring layer such as copper are laminated, for example. Each of the semiconductor chips 31, 7, and 12 is, for example, an optimum substrate selected from a silicon substrate, an SOI (Silicon On Insulator) substrate, an SOS (Silicon on Sapphire) substrate, a compound semiconductor substrate typified by GaAs, and the like. In addition, each circuit and the like are formed on the substrate by an optimum manufacturing process. For example, the transmission power amplifiers 2a and 2b are formed by LD-MOSFETs (Laterally Diffused-Metal Oxide Semiconductor Field Effect Transistors) on a silicon substrate or an SOI substrate, and the output impedance matching circuits 41a and 41b are formed on the same substrate. For example, it is formed by a MIM (Metal Insulator Metal) capacitor, a transformer, or the like.

  FIG. 23 is a circuit diagram showing a schematic configuration example around the output impedance matching circuit in FIGS. 6 and 15. As shown in FIG. 23, the output impedance matching circuit includes a transformer 41 that performs impedance conversion between the primary coil 410 and the secondary coil 411, for example. The source / drain path of the n-channel MOSFET 200 is connected between one end of the primary coil 410 and the ground power supply voltage GND, and the source / drain of the n-channel MOSFET 201 is connected between the other end of the primary coil 410 and GND. A drain path is connected. Further, both ends of the primary coil 410 are equipped with capacitors 202 for reducing harmonic components. The n-channel MOSFETs 200 and 201 and the capacitor 202 become part of the power amplifier 2 (2a and 2b) at the preceding stage. The primary coil 410 includes an intermediate tap to which the power supply voltage Vdd is applied, and the transformer 41 performs impedance conversion by a bush pull operation via the n-channel MOSFETs 200 and 201.

(Embodiment 2)
<< Basic configuration of high-frequency signal processing apparatus according to this embodiment (type 2) >>
FIG. 13 is a block diagram showing a schematic configuration example of the high-frequency signal processing device according to Embodiment 2 of the present invention. The high-frequency signal processing device shown in FIG. 13 has a configuration corresponding to, for example, two bands (band A and band B) that perform communication in accordance with an FDD (Frequency Division Duplex) method. Bands A and B are different bands in W-CDMA (Wideband Code Division Multiple Access) in which, for example, dozens of types of bands are defined. The high-frequency signal processing device of FIG. 13 includes a high-frequency front-end module 9, isolators 13 a and 13 b and duplexers 14 a and 14 b, bandpass filters 10 a and 10 b, and an antenna 8.

  The high-frequency front-end module 9 has a configuration in which three semiconductor chips 31, 7, and 12 are mounted on a wiring board (printed circuit board PCB), and each semiconductor chip is appropriately connected via the wiring board. . The high frequency front end module 9 is packaged by being sealed with a resin or the like. The band-pass filters 10a and 10b and the duplexers 14a and 14b are typically configured by a SAW (Surface Acoustic Wave) filter, a dielectric filter, or the like. As in the case of FIG. 6 described above, the semiconductor chip 31 includes input impedance matching circuits 1a and 1b, transmission power amplifiers 2a and 2b, and output impedance matching circuits 41a and 41b. Noise amplifiers 11a and 11b are provided. On the other hand, unlike the case of FIG. 6, the semiconductor chip 7 includes one SPDT (Single poles double throw) type antenna switch 61 having two receiving terminals and an antenna terminal.

  Each of the duplexers 14a and 14b has a transmission terminal, a reception terminal, and an antenna terminal. The antenna terminals of the duplexers 14 a and 14 b are connected to the antenna 8 in common. The output node of the output impedance matching circuit 41a is connected to the transmission terminal of the duplexer 14a via the isolator 13a, and the output node of the output impedance matching circuit 41b is connected to the transmission terminal of the duplexer 14b via the isolator 13b. The receiving terminals of the duplexers 14 a and 14 b are connected in common to the antenna terminal of the antenna switch 61. One of the two reception terminals of the antenna switch 61 is connected to the input node of the reception low noise amplifier 11a, and the other is connected to the input node of the reception low noise amplifier 11b. The bandpass filter 10a is connected to the output node of the reception low noise amplifier 11a, and the bandpass filter 10b is connected to the output node of the reception low noise amplifier 11b. In the figure, those with “a” in the code are for band A, and those with “b” are for band B.

  For example, when transmitting / receiving band A, the antenna terminal of the antenna switch 61 is connected to the input node of the low noise amplifier 11a. In such a state, the high frequency signal of band A output from the output impedance matching circuit 41a is transmitted to the antenna 8 through the isolator 13a and the duplexer 14a. On the other hand, the high frequency signal for band A received by the antenna 8 is input to the low noise amplifier 11a via the duplexer 14a and the antenna switch 61. At this time, the duplexer 14a, for example, separates a transmission pass band from a reception pass band different from the transmission pass band by using two band pass filters provided therein. That is, the duplexer 14a passes the transmission pass band between the transmission terminal and the antenna terminal, passes the reception pass band between the antenna terminal and the reception terminal, and receives the transmission signal on the antenna 8. The reception signal on the antenna 8 is prevented from wrapping around to the transmission side. On the other hand, during transmission / reception of band A, the duplexer 14b differs in transmission and reception passbands from the duplexer 14a, so that the transmission / reception signal for band A on the antenna 8 is sufficiently reflected at the antenna terminal of the duplexer 14b. The Therefore, the loss associated with the path on the duplexer 14b side is not particularly problematic.

  As described above, the specific features of the high-frequency signal processing device according to the present embodiment are as follows: (1) The output impedance matching circuit is on-chip, as in the case of FIGS. 2) In addition to the point that the bandpass filter is arranged on the output side of the low noise amplifier, (3) the point that the duplexer is arranged between the antenna switch and the antenna, and the antenna terminals of each duplexer are connected in common. is there. As a result, for the same reason as in the first embodiment, the manufacturing cost can be reduced, the high-frequency front-end module and the high-frequency signal processing device can be reduced, and the design of the high-frequency signal processing device can be facilitated.

  In the first embodiment described above, a configuration example for GSM / DCS is shown, and in the second embodiment, a configuration example for W-CDMA is shown. Of course, these can be mixed as appropriate. . For example, when the configuration example of FIG. 6 and the configuration example of FIG. 13 are mixed, the configuration example is such that two low-pass filters 5 a and 5 b and two duplexers 14 a and 14 b are connected to the antenna 8 in common. . Also, the type of band is not limited to these, and can be changed as appropriate including LTE (Long Term Evolution) and the like.

(Embodiment 3)
<< Modification (1) of basic structure (type 1 ') >>
FIG. 7 is a block diagram showing a schematic configuration example of the high-frequency signal processing device according to Embodiment 3 of the present invention, and shows a modification of FIG. The names of the parts indicated by the reference numerals in the figure are the same as those in FIG. 6 for those included in FIG. An antenna switch 63 is different from the configuration example of FIG. 6 only in this switch portion. In the antenna switch 63, two transmission terminals and two antenna terminals constitute two SPST (Single poles single throw) type switch circuits, and two reception terminals and another antenna are formed. One SPDT type switch circuit is constituted by the terminals for use. The antenna terminals of the two SPST type switch circuits are commonly connected to the antenna 8 through low pass filters 5a and 5b. On the other hand, in the SPDT switch circuit serving as a reception path, the antenna terminal is directly connected to the antenna 8, and the two reception terminals are connected to the input nodes of the reception low noise amplifiers 11a and 11b, respectively.

  By using such a configuration example, in addition to obtaining the same effect as in the first embodiment, it is possible to further reduce the loss of the received signal. That is, when the configuration example of FIG. 7 is used, the high-frequency signal received by the antenna 8 is input to the reception low-noise amplifier without passing through the low-pass filter, unlike the case of FIG. Can be eliminated. However, on the other hand, harmonic noise or the like that may be included in the received high-frequency signal is directly input to the low-noise amplifier, so the configuration example of FIG. 6 is more desirable from the viewpoint of this noise.

(Embodiment 4)
<< Modification (2) of Basic Configuration (Type 1 ') >>
FIG. 8 is a block diagram showing a schematic configuration example of the high-frequency signal processing device according to Embodiment 4 of the present invention, and shows another modification of FIG. The names of the parts indicated by the reference numerals in the figure are the same as those in FIG. 6 for those included in FIG. Reference numeral 24 denotes a diplexer, which is the only difference from the configuration example of FIG. That is, the two low-pass filters 5 a and 5 b in the configuration example of FIG. 6 are replaced with the diplexer 24.

  For example, in the TDD system, the diplexer 24 separates transmission and reception bands (for example, GSM bands) on a certain communication standard from transmission and reception bands (for example, DCS bands) on other communication standards. . On the other hand, the duplexer described above is distinguished from the diplexer because the transmission band and the reception band in the FDD scheme are separated by a bandpass filter. For example, the diplexer 24 shown in FIG. 8 passes the GSM band through a low-pass filter or a band-pass filter, and passes the DCS band through a band-pass filter or the like, thereby separating the bands and harmonics from the transmission power amplifier. Reduce ingredients. Also by such a configuration example, the same effect as in the first embodiment can be obtained.

(Embodiment 5)
<< Modification (3) of basic configuration (type 1 ') >>
FIG. 9 is a block diagram showing a schematic configuration example of the high-frequency signal processing device according to Embodiment 5 of the present invention, and shows still another modification of FIG. The names of the parts indicated by the reference numerals in the figure are the same as those in FIG. 6 for those included in FIG. Reference numeral 71 denotes a semiconductor chip, which is different from the configuration example of FIG. 6 in that an antenna switch 62 and low noise amplifiers 11a and 11b are integrated on the semiconductor chip 71.

<< External shape example (1) of modification (3) >>
FIG. 16 is a perspective view showing a schematic external example of a high-frequency front end module in the high-frequency signal processing device of FIG. 9, and shows a modification of FIG. The high-frequency front-end module (package) 9 shown in FIG. 16 is actually sealed with a resin or the like, but the sealing material is omitted for easy understanding of the structure. The names of the parts indicated by the reference numerals in the drawing are the same as those in FIGS. The difference between FIG. 16 and FIG. 15 is that the number of semiconductor chips in which components are integrated in the package 9 is reduced from three to two, as is clear from the comparison.

  By using the configuration examples of FIGS. 9 and 16, in addition to obtaining the same effect as in the first embodiment, the number of semiconductor chips in the package can be further reduced, so that the high-frequency front-end module and the high-frequency signal can be reduced. The processing apparatus can be further reduced in size and the assembly cost of the package can be further reduced. However, by integrating the antenna switch 62 and the low-noise amplifiers 11a and 11b on the same semiconductor chip 71, the circuit characteristics may be sacrificed in some cases due to the consistency of the manufacturing process. 15 configuration examples are more desirable.

(Embodiment 6)
<< Modification (4) of basic configuration (type 1 ') >>
FIG. 10 is a block diagram showing a schematic configuration example of the high-frequency signal processing device according to Embodiment 6 of the present invention, and shows still another modification of FIG. The names of the parts indicated by the reference numerals in the figure are the same as those in FIG. 6 for those included in FIG. Reference numeral 32 denotes a semiconductor chip. The antenna switch 62 is integrated on the semiconductor chip 32 together with the input impedance matching circuits 1a and 1b, the transmission power amplifiers 2a and 2b, and the output impedance matching circuits 41a and 41b. This is different from the configuration example. The effect of the configuration example of FIG. 10 is the same as that of the fifth embodiment.

(Embodiment 7)
<< External shape example (2) of modification (3) >>
FIG. 17 is a perspective view showing another schematic external example of the high-frequency front end module shown in FIG. 9 in the high-frequency signal processing device according to Embodiment 7 of the present invention, and showing a modification of FIG. It is. The high-frequency front end module (package) 9 in FIG. 17 is actually sealed with a resin or the like, but the sealing material is omitted for easy understanding of the structure. The names of the parts indicated by the reference numerals in the figure are the same as those in FIG. 16 for those included in FIG. Otherwise, reference numerals 20a to 23a and 20b to 23b are terminals of the lead frame, 20a and 20b are input terminals to the package 9, 21 is a ground power supply voltage (GND) terminal, and 22a and 22b are low-pass from the package 9. Input / output terminals for connection to the filters 5a and 5b, and 23a and 23b are output terminals for connection from the low noise amplifiers 11a and 11b to the bandpass filters 10a and 10b. Those with “a” in the code are for the low frequency band, and those with “b” are for the high frequency band.

  When the configuration example of FIG. 17 is used, the components in the package 9 are only two semiconductor chips 31 and 71 and a lead frame. The two semiconductor chips 31 and 71 are respectively mounted on two die pads that are members of the lead frame. Therefore, by using such a configuration example, in addition to obtaining the same effect as in the fifth embodiment, a wiring board (printed circuit board PCB) for mounting a semiconductor chip is further unnecessary. The effect that the manufacturing cost can be further reduced is obtained.

(Embodiment 8)
<< Modification (5) of basic configuration (type 1 ') >>
FIG. 11 is a block diagram illustrating a schematic configuration example of the high-frequency signal processing device according to the eighth embodiment of the present invention, and illustrates yet another modification of FIG. The names of the parts indicated by the reference numerals in the figure are the same as those in FIG. 6 for those included in FIG. Reference numeral 33 denotes a semiconductor chip. On the semiconductor chip 33, input impedance matching circuits 1a and 1b, transmission power amplifiers 2a and 2b, output impedance matching circuits 41a and 41b, an antenna switch 62, and low noise amplifiers 11a and 11b are provided. It is different from the configuration example of FIG.

<< External shape example of modification (5) >>
18 is a perspective view showing a schematic external example of the high-frequency front end module in the high-frequency signal processing device of FIG. 11, and shows a modification of FIG. The high-frequency front end module (package) 9 is actually sealed with a resin or the like, but the sealing material is omitted for easy understanding of the structure. The names of the parts indicated by the reference numerals in the figure are the same as those in FIGS. 11 and 17. In FIG. 18, unlike the case of FIG. 17, the components in the package 9 are only one semiconductor chip 33 and a lead frame. The semiconductor chip 33 is mounted on a die pad serving as a lead frame member. The semiconductor chip 33 is realized by, for example, an SOI substrate.

  Using such a configuration example, in addition to obtaining the same effect as in the first embodiment, the package can be realized with a single semiconductor chip, so that the high-frequency front-end module and the high-frequency signal processing device can be greatly improved. The size can be reduced and the assembly cost of the package can be greatly reduced. However, when all the circuits described above are formed on the same SOI substrate or the like, the circuit characteristics of each circuit may be considerably sacrificed. From this point of view, FIG. 6, FIG. 9, or FIG. The configuration example is preferable.

(Embodiment 9)
<< Modification of Basic Configuration (Type 1 ') (6) >>
FIG. 12 is a block diagram showing a schematic configuration example of the high-frequency signal processing device according to Embodiment 9 of the present invention, and shows yet another modification of FIG. The names of the parts indicated by the reference numerals in the figure are the same as those in FIG. 6 for those included in FIG. In the configuration example of FIG. 12, low noise amplifiers 11a and 11b formed on the semiconductor chip 12 are arranged outside the high frequency front end module (package) 9, and the bandpass filters 10a and 10b are connected to the antenna switch 62 and low noise. 6 is different from the configuration example of FIG. 6 in that it is connected between the amplifiers 11a and 11b.

  When such a configuration example is used, substantially the same effect as that of the first embodiment can be obtained. However, as the low noise amplifiers 11a and 11b are arranged outside the package 9, compared to the configuration example of FIG. There is a possibility that the effect of downsizing and cost reduction as a whole high-frequency signal processing apparatus may be reduced. However, disposing the low noise amplifier outside the package eliminates the above-described problem of the return wiring to the package, so that a band pass filter can be disposed on the input side of the low noise amplifier. As described above, the band-pass filter can be arranged on the output side of the low noise amplifier, but it is also beneficial to arrange it on the input side. When arranged on the input side, the interference wave that has entered via the antenna 8 is removed before being input to the low-noise amplifier. As a result, even if the size of the low noise amplifier is small, distortion is hardly generated in the amplification characteristic and the signal characteristic is hardly deteriorated. As a result, the low noise amplifier can be miniaturized and the power consumption can be reduced. Even when the low-noise amplifier is arranged outside the package, for example, when the low-noise amplifier can be integrated on a semiconductor chip on which a receiving demodulation circuit (mixer circuit, etc.) is formed, Can be sufficiently downsized.

(Embodiment 10)
<< Modification of Basic Configuration (Type 2) >>
FIG. 14 is a block diagram showing a schematic configuration example of the high-frequency signal processing device according to the tenth embodiment of the present invention, and shows a modification of FIG. The names of the parts indicated by the reference numerals in the figure are the same as those in FIG. 13 for those included in FIG. Reference numeral 64 denotes an antenna switch, and the antenna switch 64 is configured by two SPST type switch circuits, which is different from the configuration example of FIG. One of the two switch circuits has one end connected to the receiving terminal of the duplexer 14a and the other end connected to the input node of the low noise amplifier 11a. The other of the two switch circuits has one end connected to the receiving terminal of the duplexer 14b and the other end connected to the input node of the low noise amplifier 11b.

  When such a configuration example is used, the same effect as in the second embodiment can be obtained. In the configuration example of FIG. 13 described in the second embodiment, the receiving terminals of the duplexers 14a and 14b are commonly connected to the antenna terminal of the antenna switch 61. Therefore, depending on the case, the receiving terminals of the duplexer 14a may be used. There is a possibility that the signal quality may be deteriorated due to the reception signal output from sneak around the reception terminal side of the duplexer 14b and reflected there. On the other hand, when the configuration example of FIG. 14 is used, such a situation can be prevented.

(Embodiment 11)
<< Modification (7) of basic structure (type 1 ') >>
FIG. 21 is a block diagram showing a schematic configuration example of the high-frequency signal processing device according to the eleventh embodiment of the present invention, and shows a modification of FIG. The names of the parts indicated by the reference numerals in the figure are the same as those in FIG. Reference numeral 32 denotes a semiconductor chip. On the semiconductor chip 32, an antenna switch 62 is integrated together with input impedance matching circuits 1a and 1b, transmission power amplifiers 2a and 2b, and output impedance matching circuits 41a and 41b. The configuration example of FIG. 21 is different from the configuration example of FIG. 12 in that the antenna switch 62 is formed on the same semiconductor chip as the transmission power amplifiers 2a and 2b. By using such a configuration example, in addition to obtaining the same effects as those of the ninth embodiment, the number of semiconductor chips in the package is further reduced, so that the cost can be reduced and the size can be reduced. can get.

(Embodiment 12)
<< Modification (8) of basic configuration (type 1 ') >>
FIG. 22 is a block diagram illustrating a schematic configuration example of the high-frequency signal processing device according to the twelfth embodiment of the present invention, and illustrates yet another modification of FIG. The names of the parts indicated by the reference numerals in the figure are the same as those in FIG. 6 for those included in FIG. Reference numeral 7 denotes a semiconductor chip on which an antenna switch 65 is formed, and the antenna switch 65 includes four SPST type switch circuits having four transmission terminals and four antenna terminals.

  The first SPST type switch circuit has one end connected to the output node of the output impedance matching circuit 41a and the other end connected to one end of the low-pass filter 5a. The second SPST type switch circuit has one end connected to the output impedance matching circuit. The other end of the output node 41b is connected to one end of the low-pass filter 5b. The third SPST type switch circuit has one end connected to the input node of the low noise amplifier 11a and the other end connected to one end of the bandpass filter 10a. The fourth SPST type switch circuit has one end connected to the low noise amplifier 11b. The other end is connected to the input node and one end of the band-pass filter 10b. The other ends of the low-pass filters 5 a and 5 b and the band-pass filters 10 a and 10 b are connected to the antenna 8 in common. In the first to fourth SPST type switch circuits, one of the switch circuits is driven to be turned on at a certain timing in accordance with the selection of the low frequency band and the high frequency band and the selection of transmission and reception. Therefore, the four branch paths existing on the antenna 8 are not particularly problematic for the same reason as in FIG.

  When the configuration example of FIG. 22 is used, the same effect as that of the first embodiment can be obtained. Further, since the band pass filters 10a and 10b are connected to the inputs of the low noise amplifiers 11a and 11b, the interference wave that has entered via the antenna 8 is removed before being input to the low noise amplifier. . Therefore, as compared with the configuration example of FIG. 6, even if the size of the low noise amplifier is small, distortion in the amplification characteristic hardly occurs and the signal characteristic is hardly deteriorated. As a result, the low noise amplifier can be reduced in size and power consumption can be reduced.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention.

  For example, in each of the above-described embodiments, the configuration example around the high-frequency front end is shown by taking a mobile phone as an example. However, the present invention is not limited to the mobile phone, and is of course wireless LAN, Bluetooth (registered trademark), UWB (Ultra Wide Band). The present invention can be similarly applied to various wireless communication systems. In FIG. 6 and the like described above, a low-pass filter is connected to the antenna 8, but a band-pass filter may be used instead of the low-pass filter depending on circumstances. Furthermore, in the above-described FIG. 6 and the like, a configuration example corresponding to two bands is shown, but it is of course possible to extend to three or more bands in the same manner.

  Here, the characteristic configuration of the high-frequency signal processing device according to each embodiment described above is summarized below.

  (1) The high-frequency signal processing device according to the present embodiment includes a single or a plurality of semiconductor chips on which at least a power amplifier circuit, an output impedance matching circuit thereof, and an antenna switch circuit are integrated, and leads for mounting them. It has an integrated circuit package in which a frame or a printed circuit board is sealed. The output impedance matching circuit and the antenna switch circuit are connected by a high-frequency signal line without a filter, and the filter is connected between the antenna switch circuit and the antenna outside the integrated circuit package.

  (2) The high-frequency signal processing device according to (1) further includes a branch in the high-frequency signal line between the antenna and the filter.

  (3) The high-frequency signal processing device according to (1) includes a power amplifier circuit, an output impedance matching circuit thereof, an antenna switch circuit and a single or a plurality of semiconductor chips in which a low-noise amplifier circuit is further integrated; And an integrated circuit package sealed with a printed circuit board. Then, a low noise amplifier circuit is connected to the output of the antenna switch circuit by a high frequency signal line without a filter.

  (4) In the high-frequency signal processing device of (3), a filter is connected to the output of the low-noise amplifier circuit outside the integrated circuit package.

  (5) The high-frequency signal processing device according to the present embodiment includes a single or a plurality of semiconductor chips in which at least a power amplifier circuit, an output impedance matching circuit thereof, and an antenna switch circuit are integrated, and leads on which these are mounted. It has an integrated circuit package in which a frame or a printed circuit board is sealed. Then, outside the integrated circuit package, a duplexer is connected between the antenna switch circuit and the antenna.

  (6) The high-frequency signal processing device according to (5) has a branch in the high-frequency signal line between the antenna and the duplexer.

  (7) The high-frequency signal processing device according to (5) includes a power amplifier circuit, an output impedance matching circuit thereof, an antenna switch circuit and a single or a plurality of semiconductor chips in which a low noise amplifier circuit is further integrated, and And an integrated circuit package sealed with a printed circuit board. A low noise amplifier circuit is connected to the output of the antenna switch circuit by a high frequency signal line without passing through a filter and a duplexer.

  (8) The high-frequency signal processing device according to (1) to (7) includes a plurality of terminals to which the antenna switch circuit is connected to the antenna.

  (9) In the high-frequency signal processing device according to (3) and (8), a filter is inserted between the antenna and the antenna switch circuit in a path outside the integrated circuit package and connected to the low-noise amplifier circuit from the antenna. Have a configuration.

  (10) In the high-frequency signal processing devices of (1) to (9), the output impedance matching circuit of the power amplifier circuit is formed of a transformer.

10a, 10b Band pass filter 11a, 11b Low noise amplifier 13a, 13b Isolator 14a, 14b Duplexer 15a, 15b Input pad 16a, 16b, 19a, 19b Wire 17a, 17b Input / output pad 18a, 18b Output pad 1a, 1b Input impedance matching Circuit 2, 2a, 2b Power amplifier 200, 201 MOSFET
202 Capacitance 20a, 20b Input terminal 21 Ground power supply voltage terminal 22a, 22b Input / output terminal 23a, 23b Output terminal 24 Diplexer 3, 7, 12, 31-34, 71 Semiconductor chip 41 Transformer 410, 411 Coil 4a, 4b, 41a, 41b Output impedance matching circuit 5a, 5b Low pass filter 6, 61, 62, 63, 64, 65 Antenna switch 8 Antenna 9 High frequency front end module 91 Wiring board

Claims (18)

A first antenna switch circuit for connecting the first antenna connection node to the first transmission node;
A first power amplifier circuit for amplifying the first transmission signal;
A first matching circuit provided between an output node of the first power amplifier circuit and the first transmission node, for matching an output impedance of the first power amplifier circuit with an input impedance on the first transmission node side;
A first filter having one end connected to the first antenna connection node and the other end connected to the antenna;
A second antenna switch circuit connecting the second antenna connection node to the second transmission node;
A second power amplifier circuit for amplifying the second transmission signal;
A second matching circuit provided between an output node of the second power amplifier circuit and the second transmission node, and matching an output impedance of the second power amplifier circuit to an input impedance on the second transmission node side;
A high frequency signal processing apparatus comprising: a second filter having one end connected to the second antenna connection node and the other end connected to the antenna. The high frequency signal processing device according to claim 1,
Each of the first and second filters is a low-pass filter. The high frequency signal processing device according to claim 1,
The first and second power amplifier circuits and the first and second matching circuits are formed on the same semiconductor chip,
The first antenna switch circuit and the second antenna switch circuit are formed on the same semiconductor chip,
The first and second power amplifier circuits, the first and second matching circuits, and the first and second antenna switch circuits are mounted in one first package,
The high frequency signal processing apparatus, wherein the first and second filters are mounted outside the first package. In the high frequency signal processing device according to claim 3,
The high frequency signal processing apparatus, wherein the first package includes a lead frame and has a structure in which a semiconductor chip is mounted on a die pad on the lead frame. The high frequency signal processing device according to claim 1,
The first antenna switch circuit further includes a first reception node, and selectively connects the first antenna connection node to the first transmission node or the first reception node;
The second antenna switch circuit further includes a second reception node, and selectively connects the second antenna connection node to the second transmission node or the second reception node;
The high-frequency signal processing device further includes:
A first low noise amplifier circuit having an input node connected to the first receiving node;
A second low noise amplifier circuit having an input node connected to the second receiving node;
A first bandpass filter connected to an output node of the first low noise amplifier circuit;
And a second band-pass filter connected to an output node of the second low-noise amplifier circuit. In the high frequency signal processing device according to claim 5,
The first and second power amplifier circuits and the first and second matching circuits are formed on the same semiconductor chip,
The first antenna switch circuit and the second antenna switch circuit are formed on the same semiconductor chip,
The first low noise amplifier circuit and the second low noise amplifier circuit are formed on the same semiconductor chip,
The first and second power amplifier circuits, the first and second matching circuits, the first and second antenna switch circuits, and the first and second low-noise amplifier circuits are mounted in one second package. And
The high frequency signal processing apparatus, wherein the first and second filters and the first and second band pass filters are mounted outside the second package. In the high frequency signal processing device according to claim 5,
The first and second power amplifier circuits and the first and second matching circuits are formed on the same semiconductor chip,
The first antenna switch circuit and the second antenna switch circuit are formed on the same semiconductor chip,
The first low noise amplifier circuit and the second low noise amplifier circuit are formed on the same semiconductor chip,
The first and second power amplifier circuits, the first and second matching circuits, and the first and second antenna switch circuits are mounted in one third package,
The high-frequency signal processing device, wherein the first and second low-noise amplifier circuits, the first and second filters, and the first and second bandpass filters are mounted outside the third package. A first antenna switch circuit for connecting the first antenna connection node to the first transmission node;
A first power amplifier circuit for amplifying the first transmission signal;
A first matching circuit provided between an output node of the first power amplifier circuit and the first transmission node, for matching an output impedance of the first power amplifier circuit with an input impedance on the first transmission node side;
A high-frequency signal processing device comprising: a first low-pass filter having one end connected to the first antenna connection node and the other end connected to the antenna. In the high frequency signal processing device according to claim 8,
The first power amplifier circuit and the first matching circuit are formed on the same semiconductor chip,
The first power amplifier circuit, the first matching circuit, and the first antenna switch circuit are mounted in one first package,
The high-frequency signal processing apparatus, wherein the first low-pass filter is mounted outside the first package. In the high frequency signal processing device according to claim 8,
The first antenna switch circuit further includes a first reception node, and selectively connects the first antenna connection node to the first transmission node or the first reception node;
The high-frequency signal processing device further includes:
A first low noise amplifier circuit having an input node connected to the first receiving node;
A high frequency signal processing apparatus comprising: a first band pass filter connected to an output node of the first low noise amplifier circuit. In the high frequency signal processing device according to claim 10,
The first power amplifier circuit and the first matching circuit are formed on the same semiconductor chip,
The first power amplifier circuit, the first matching circuit, the first antenna switch circuit, and the first low noise amplifier circuit are mounted in one second package,
The high-frequency signal processing apparatus, wherein the first low pass filter and the first band pass filter are mounted outside the second package. In the high frequency signal processing device according to claim 8,
The first antenna switch circuit further includes a second antenna connection node and a second reception node, a connection between the first antenna connection node and the first transmission node, a second antenna connection node, and the second reception node. A high-frequency signal processing apparatus characterized by selectively controlling connection of nodes. The high-frequency signal processing device according to claim 12, further comprising:
A second low noise amplifier circuit having an input node connected to the second receiving node;
A second bandpass filter connected to the output node of the second low noise amplifier circuit;
The high frequency signal processing apparatus, wherein the second antenna connection node is connected to the antenna. The high-frequency signal processing device according to claim 12, further comprising:
A second low noise amplifier circuit having an input node connected to the second receiving node;
A high frequency signal processing apparatus comprising: the second antenna connection node; and a third band pass filter connected between the antennas. A first signal that passes a signal in the first transmission band between the first transmission node and the first antenna connection node, and a signal in the first reception band that passes between the first antenna connection node and the first reception node. Duplexer,
A first power amplifier circuit for amplifying the first transmission signal;
A first matching circuit provided between an output node of the first power amplifier circuit and the first transmission node, for matching an output impedance of the first power amplifier circuit with an input impedance on the first transmission node side;
A second signal that passes a signal in the second transmission band between the second transmission node and the second antenna connection node, and a signal in the second reception band that passes between the second antenna connection node and the second reception node; Duplexer,
A second power amplifier circuit for amplifying the second transmission signal;
A second matching circuit provided between the output node of the second power amplifier circuit and the second transmission node and configured to match the output impedance of the second power amplifier circuit with the input impedance on the second transmission node side. The high-frequency signal processing device, wherein the first and second antenna connection nodes are directly connected to an antenna. The high-frequency signal processing device according to claim 15,
The first and second power amplifier circuits and the first and second matching circuits are formed on the same semiconductor chip and mounted in one first package,
The high-frequency signal processing apparatus, wherein the first and second duplexers are mounted outside the first package. The high-frequency signal processing device according to claim 15, further comprising:
First and second low noise amplifier circuits;
An antenna switch circuit connecting the first receiving node to an input node of the first low noise amplifier circuit and connecting the second receiving node to an input node of the second low noise amplifier circuit;
A first bandpass filter connected to an output node of the first low noise amplifier circuit;
And a second band-pass filter connected to an output node of the second low-noise amplifier circuit. The high-frequency signal processing device according to claim 17,
The first and second power amplifier circuits and the first and second matching circuits are formed on the same semiconductor chip,
The first low noise amplifier circuit and the second low noise amplifier circuit are formed on the same semiconductor chip,
The first and second power amplifier circuits, the first and second matching circuits, the antenna switch circuit, and the first and second low noise amplifier circuits are mounted in one second package,
The high frequency signal processing apparatus, wherein the first and second duplexers and the first and second band pass filters are mounted outside the second package.

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