JP2012054408A - Substrate treatment apparatus and method for manufacturing substrate to be treated - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technology for treating a substrate, which can accurately measure temperature by using a radiation thermometer when the substrate is induction-heated.SOLUTION: A substrate treatment apparatus comprises: a reaction tube for accommodating and treating a plurality of substrates therein; a plurality of stacked bodies to be induction-heated which are provided inside of the reaction tube, and heat the plurality of substrates; a light condensing part for simultaneously condensing light from the plurality of bodies to be induction-heated; the radiation thermometer for measuring the temperature of the plurality of bodies to be induction-heated based on the light from the bodies to be induction-heated, which are simultaneously condensed in the light condensing part; and an induction heating body which is provided outside of the reaction tube and induction-heats the bodies to be induction-heated based on a temperature information measured by the radiation thermometer.

Description

  The present invention relates to a substrate processing apparatus and a substrate manufacturing method for processing a substrate such as a semiconductor wafer (hereinafter referred to as a wafer) in which an integrated circuit including a semiconductor element is formed, and in particular, an insulating film, a metal film, a semiconductor film, and the like. In a vertical apparatus for forming a film, for example, a substrate is placed on a susceptor that is an induction heating body, the susceptor on which the substrate is placed is placed on a boat as a substrate support, and the susceptor is placed on the susceptor by induction heating. The present invention relates to a technique for heat-treating a substrate.

In a cold wall furnace that uses induction heating to heat only the object to be processed, such as a wafer, without increasing the temperature of the reaction tube, heat insulation around the heater as used in a hot wall furnace is not used. The temperature in the furnace is not constant depending on the location, and the temperature distribution is unevenly distributed. For this reason, when temperature measurement is performed using a thermocouple (TC) used in a hot wall furnace, there is a temperature difference of about several hundred degrees depending on the measurement location, and the temperature of the object to be processed cannot be measured accurately. In addition, since the radiation area at the end of the thermocouple is small, it is difficult to receive radiant heat from the processing object that has been red-heated by induction heating, the temperature measurement response is poor, and it is difficult to output the temperature state of the processing object in real time. It is.
From the above circumstances, in a processing apparatus that heats a processing object such as a wafer using induction heating, temperature measurement is often performed using a radiation thermometer.

  In Patent Document 1 below, in a batch type vertical hot wall heat treatment apparatus, a temperature is measured by inserting a radiation thermometer between the upper and lower wafers held in the boat of the processing chamber through the side wall of the process tube. A technique for feedback-controlling a heater with a measured temperature from a radiation thermometer is disclosed. In Patent Document 2, an L-shaped radiation thermometer including a holding pipe and a waveguide rod having a total reflection surface is inserted into a cap for sealing a process tube in a batch type vertical hot wall heat treatment apparatus. A technique is disclosed in which a temperature is measured by inserting a waveguide rod between wafers held in a boat and rotating with a holding pipe, and the heater is feedback-controlled with a measured temperature from a radiation thermometer.

JP 2002-208591 A JP 2008-147656 A

When performing temperature measurement with a radiation thermometer, for example, the measurement point of the radiation thermometer is adjusted to the susceptor, which is an induction heating body on which the substrate is placed. However, if the susceptor is thermally expanded by heating, the measurement point is likely to shift. Thus, there is a problem that if the measurement point is shifted, an accurate temperature cannot be measured.
An object of the present invention is to provide a substrate processing technique that enables accurate temperature measurement using a radiation thermometer when induction heating a substrate.

A typical configuration of the substrate processing apparatus according to the present invention for solving the above-described problems is as follows.
A reaction tube for accommodating and processing a plurality of substrates;
A plurality of stacked induction heating bodies provided inside the reaction tube and heating a plurality of substrates;
A condensing unit that condenses the light from the plurality of induction heating bodies at the same time, and based on the light from the induction heating body that the condensing unit condenses the temperature of the plurality of induction heating bodies; A radiation thermometer to measure,
A substrate processing apparatus comprising: an induction heating body that is provided outside the reaction tube and that induction-heats the induction heating body based on temperature information measured by the radiation thermometer.

Moreover, the typical structure of the manufacturing method of the to-be-processed substrate which concerns on this invention is as follows.
Transporting a plurality of substrates into a reaction tube;
Conveying a plurality of induction heating bodies into the reaction tube;
Heat-treating the plurality of substrates by induction heating the plurality of induction heating bodies in the reaction tube using an induction heating body provided outside the reaction tube;
Condensing light from the plurality of induction heating bodies simultaneously;
Measuring the temperature of the plurality of induction heating bodies based on the light from the plurality of induction heating bodies condensed simultaneously.

  According to the configuration of the substrate processing apparatus or the method of manufacturing the substrate to be processed, the light from the plurality of induction heating bodies is simultaneously condensed by the light collecting unit, so that the plurality of induction heating bodies are Since a certain area can be monitored at the same time, it is possible to measure a more accurate temperature in the area where the plurality of induction heating bodies are present without being influenced by a sudden temperature fluctuation that occurs locally. Become. Since more accurate temperature measurement is possible in real time, the response speed can be improved, and a plurality of substrates can be processed at a more accurate temperature.

It is a schematic perspective view of the substrate processing apparatus in the Example of this invention. It is a general | schematic vertical sectional view of the processing furnace in the Example of this invention. It is a general | schematic horizontal sectional view of the processing furnace in the Example of this invention. It is side surface sectional drawing which shows the state in which the wafer is accommodated in the recessed part of the susceptor in the Example of this invention. It is a top view of the susceptor in the Example of this invention. It is side surface sectional drawing which shows the state which the push-up pin pushes up the wafer on a susceptor in the Example of this invention. It is a schematic layout drawing of the quartz rod in the example of the present invention. It is a schematic layout drawing of the quartz rod in the 1st modification of the example of the present invention. It is a schematic layout of the lens in the 2nd modification of the Example of this invention. In the Example of this invention, it is side surface sectional drawing which shows the state hold | maintained by the holding | maintenance part of the boat several susceptors which accommodated the wafer in the recessed part. It is a plane sectional view showing the state where the susceptor which stored the wafer in the crevice in the example of the present invention was held with the holding part of the boat. It is side surface sectional drawing which shows the example which provided the heat conduction relaxation substance in the holding | maintenance part of the boat in the Example of this invention. It is a schematic diagram which shows the lens focus position in the 2nd modification. It is a figure which shows the experimental result in the Example of this invention.

  A substrate processing apparatus according to an embodiment of the present invention will be described below with reference to the drawings. As an example, the substrate processing apparatus in the embodiment is configured as a semiconductor manufacturing apparatus that performs a processing step in a manufacturing method of a semiconductor device (IC: Integrated Circuit). In the following description, a case will be described in which a batch type vertical semiconductor manufacturing apparatus (hereinafter simply referred to as a processing apparatus) that performs oxidation, diffusion processing, CVD (Chemical Vapor Deposition) processing, or the like is applied to a substrate as the substrate processing apparatus.

  As shown in FIG. 1, a processing apparatus 101 using a cassette 110 as a wafer carrier containing a wafer (substrate) 200 made of silicon or the like includes a casing 111. Below the front wall 111a of the housing 111, a front maintenance port 103 serving as an opening provided for maintenance is opened, and a front maintenance door 104 for opening and closing the front maintenance port 103 is installed. In the maintenance door 104, a cassette loading / unloading port (substrate container loading / unloading port) 112 is opened so as to communicate between the inside and outside of the casing 111. The cassette loading / unloading port 112 is open / closed by a front shutter (substrate container loading / unloading port opening / closing). The mechanism is opened and closed by a mechanism 113. A cassette stage (substrate container delivery table) 114 is installed inside the casing 111 of the cassette loading / unloading port 112. The cassette 110 is carried onto the cassette stage 114 by an in-process carrying device (not shown), and is also carried out from the cassette stage 114. The cassette stage 114 is configured so that the wafer 200 in the cassette 110 is placed in a vertical posture and the wafer loading / unloading port of the cassette 110 faces upward by the in-process transfer device.

  A cassette shelf (substrate container mounting shelf) 105 is installed at a substantially lower center in the front-rear direction in the casing 111, and the cassette shelf 105 stores a plurality of cassettes 110 in a plurality of rows and a plurality of rows. The wafers 200 in the cassette 110 are arranged so that they can be taken in and out. The cassette shelf 105 is installed on a slide stage (horizontal movement mechanism) 106 so as to be capable of traversing. In addition, a buffer shelf (substrate container storage shelf) 107 is installed above the cassette shelf 105 and configured to store the cassette 110.

  A cassette carrying device (substrate container carrying device) 118 is installed between the cassette stage 114 and the cassette shelf 105. The cassette transport device 118 includes a cassette elevator (substrate container lifting mechanism) 118a that can be moved up and down while holding the cassette 110, and a cassette transport mechanism (substrate container transport mechanism) 118b as a transport mechanism. The cassette 110 is transported between the cassette stage 114, the cassette shelf 105, and the buffer shelf 107 by continuous operation of the cassette 118a and the cassette transport mechanism 118b.

  A wafer transfer mechanism (substrate transfer mechanism) 125 is installed behind the cassette shelf 105, and the wafer transfer mechanism 125 is a wafer transfer apparatus (substrate) that can rotate or linearly move the wafer 200 in the horizontal direction. (Transfer device) 125a and wafer transfer device elevator (substrate transfer device lift mechanism) 125b for moving up and down the wafer transfer device 125a. As schematically shown in FIG. 1, the wafer transfer device elevator 125 b is installed at the left end of the housing 111. By the continuous operation of the wafer transfer device elevator 125b and the wafer transfer device 125a, the susceptor 218 in the susceptor holding mechanism (not shown) with the tweezer (substrate holding body) 125c of the wafer transfer device 125a as the mounting portion of the wafer 200 is used. On the other hand, the wafer 200 is loaded (charged) and unloaded (discharged).

As shown in FIGS. 4 to 6, the susceptor 218 is provided with pin holes 2187 at three locations. In the susceptor holding mechanism, the push-up pins 2185 are inserted into the pin holes 2187 of the susceptor 218 and provided at three locations.
A push-up pin 2185 of the wafer 200 and a push-up pin lifting mechanism 2186 for moving the push-up pin 2185 up and down are provided, and the wafer 200 is loaded and unloaded between the tweezer 125c and the susceptor 218. Preferably, the tip of the push-up pin 2185 is formed in a flange shape so as not to damage the wafer 200 when pushed up and to suppress heat radiation from the pin hole 2187.
A susceptor moving mechanism (not shown) is configured to load (charge) and unload (discharge) the susceptor 218 between the susceptor holding mechanism and the boat 217 (susceptor support).

  As shown in FIG. 1, a clean unit 134a composed of a supply fan and a dustproof filter is provided behind the buffer shelf 107 so as to supply clean air that is a cleaned atmosphere. It is configured to circulate inside the casing 111. In addition, a clean unit (not shown) composed of a supply fan and a dustproof filter for supplying clean air is installed at the right end opposite to the wafer transfer device elevator 125b side, and blown out from the clean unit. The clean air is circulated through the wafer transfer device 125 a and then sucked into an exhaust device (not shown) and exhausted to the outside of the casing 111.

  On the rear side of the wafer transfer device (substrate transfer device) 125a, a case (hereinafter referred to as a pressure-resistant case) 140 having a confidential performance capable of maintaining a pressure lower than atmospheric pressure (hereinafter referred to as negative pressure) is provided. Is installed, and a load lock chamber 141 that is a load lock type standby chamber having a capacity capable of accommodating the boat 217 is formed by the pressure-resistant housing 140.

  A wafer loading / unloading port (substrate loading / unloading port) 142 is opened on the front wall 140a of the pressure-resistant housing 140, and the wafer loading / unloading port 142 is opened and closed by a gate valve (substrate loading / unloading port opening / closing mechanism) 143. It has become. A gas supply pipe 144 for supplying an inert gas such as nitrogen gas to the load lock chamber 141 and an exhaust pipe (not shown) for exhausting the load lock chamber 141 to a negative pressure are provided on a pair of side walls of the pressure-resistant housing 140. And are connected to each other.

  A processing furnace 202 is provided above the load lock chamber 141. The lower end portion of the processing furnace 202 is configured to be opened and closed by a furnace port gate valve (furnace port opening / closing mechanism) 147.

  As schematically shown in FIG. 1, a boat elevator (derivative support raising / lowering mechanism) 115 for raising and lowering the boat 217 is installed in the load lock chamber 141. A seal cap 219 as a lid is horizontally installed on an arm (not shown) as a connecting tool connected to the boat elevator 115, and the seal cap 219 supports the boat 217 vertically, and the lower end of the processing furnace 202 is attached to the lower end of the processing furnace 202. It is configured to be occluded.

  The boat 217 serving as a support to be derivatized includes a plurality of holding members, and in a state where a plurality of (for example, about 50 to 100) susceptors 218 are aligned in the vertical direction with their centers aligned. It is configured to hold horizontally.

Next, the operation of the processing apparatus according to the embodiment of the present invention will be described.
As shown in FIG. 1, the cassette loading / unloading port 112 is opened by the front shutter 113 before the cassette 110 is supplied to the cassette stage 114. Thereafter, the cassette 110 is loaded from the cassette loading / unloading port 112 and is placed on the cassette stage 114 so that the wafer 200 is in a vertical posture and the wafer loading / unloading port of the cassette 110 faces upward.

  Next, the cassette 110 is rescued from the cassette stage 114 by the cassette carrying device 118, and the wafer 200 in the cassette 110 is in a horizontal posture and the wafer loading / unloading port of the cassette 110 faces the rear of the housing. It is rotated 90 ° in the longitudinal direction toward the rear. Subsequently, the cassette 110 is automatically transported to the designated shelf position of the cassette shelf 105 or the buffer shelf 107 by the cassette transport device 118, delivered, temporarily stored, and then stored by the cassette transport device 118. It is transferred to the cassette shelf 105 or directly transferred to the cassette shelf 105.

  The slide stage 106 moves the cassette shelf 105 horizontally and positions the cassette 110 to be transferred so as to face the wafer transfer device 125a.

The wafer 200 is picked up from the cassette 110 through the wafer loading / unloading port by the tweezer 125c of the wafer transfer device 125a. In the susceptor holding mechanism, the push-up pin 2185 is raised by the push-up pin lifting mechanism 2186. Subsequently, the wafer 200 is placed on the push-up pins 2185 by the wafer transfer device 125a.
Subsequently, the push-up pin elevating mechanism 2186 lowers the push-up pin 2185 on which the wafer 200 is placed, and the wafer 200 is placed on the susceptor 218.

When the wafer loading / unloading port 142 of the load lock chamber 141 whose interior is previously set to atmospheric pressure is opened by the operation of the gate valve 143, the susceptor 218 is detached from the susceptor holding mechanism by the susceptor moving mechanism, and the wafer is loaded. It is carried into the load lock chamber 141 through the carry-out port 142, and the susceptor 218 is loaded into the boat 217.
The wafer transfer device 125a returns to the cassette 110 and loads the next wafer 200 into the susceptor holding mechanism. The susceptor moving mechanism returns to the susceptor holding mechanism, and loads the susceptor 218 on which the next wafer 200 is placed on the boat 217.

  When a predetermined number of susceptors 218 are loaded in the boat 217, the wafer loading / unloading port 142 is closed by the gate valve 143, and the load lock chamber 141 is evacuated by being evacuated from the exhaust pipe. When the load lock chamber 141 is reduced to the same pressure as that in the processing furnace 202, the lower end portion of the processing furnace 202 is opened by the furnace port gate valve 147. Subsequently, the seal cap 219 is raised by the boat elevator 115, and the boat 217 supported by the seal cap 219 is loaded into the processing furnace 202.

  After loading, arbitrary processing is performed on the wafer 200 in the processing furnace 202. After the processing, the boat 217 is pulled out by the boat elevator 115, and the gate valve 143 is opened after the inside of the load lock chamber 140 is restored to atmospheric pressure. Thereafter, the wafer 200 and the cassette 110 are discharged to the outside of the casing 111 in the reverse order of the above-described procedure.

Next, the processing furnace 202 of the substrate processing apparatus according to the embodiment of the present invention will be described.
FIG. 2 is a schematic configuration diagram of the periphery of the processing furnace 202 and the processing furnace of the substrate processing apparatus used in the embodiment of the present invention, and is shown as a longitudinal sectional view. FIG. 3 is a schematic configuration diagram of the processing furnace 202 of the substrate processing apparatus used in the embodiment of the present invention, and is shown as a horizontal sectional view.

As shown in FIGS. 2 and 3, the processing furnace 202 includes an induction heating device 206 configured to be able to apply a high-frequency current.
The induction heating device 206 is formed in a cylindrical shape and includes an RF coil 2061, a wall body 2062, and a cooling wall 2063 as an induction heating unit. The RF coil 2061 is connected to a high frequency power source (not shown).
The wall body 2062 is made of metal such as stainless steel and has a cylindrical shape, and an RF coil 2061 is provided on the inner wall side. The RF coil 2061 is supported by a coil support portion (not shown). The coil support portion is supported by the wall body 2062 with a predetermined gap in the radial direction between the RF coil 2061 and the wall body 2062.
On the outer wall side of the wall body 2062, a cooling wall 2063 is provided concentrically with the wall body 2062. An opening 2066 is formed at the center of the upper end of the wall body 2062. A duct is connected to the downstream side of the opening 2066, and a radiator 2064 as a cooling device and a blower 2065 as an exhaust device are connected to the downstream side of the duct.
In the cooling wall 2063, for example, a cooling medium flow path is formed in almost the entire area of the cooling wall 2063 so that, for example, cooling water can flow as a cooling medium. A cooling medium supply unit that supplies a cooling medium (not shown) and a cooling medium exhaust unit that exhausts the cooling medium are connected to the cooling wall 2063. The cooling medium is supplied to the cooling medium flow path from the cooling medium supply unit and exhausted from the cooling medium exhaust unit, whereby the cooling wall 2063 is cooled, and the walls 2062 and 2062 are cooled by heat conduction.

Inside the RF coil 2061, an outer tube 205 is provided as a reaction tube constituting a reaction vessel concentrically with the induction heating device 206. The outer tube 205 is made of a quartz (SiO ₂ ) material as a heat-resistant material, and has an outer shape that is closed at the upper end and opened at the lower end in a cylindrical shape. An inner tube 204 is provided inside the outer tube 205.
The inner tube 204 is made of quartz (SiO ₂ ) material as a heat-resistant material, and has an upper end closed, a lower end opened, an opening 204a on a side surface, and an outer shape formed in a cylindrical shape. The opening 204a is provided in a vertically long slit shape at a position corresponding to a gas nozzle 232a described later. In the case where there are a plurality of gas nozzles 232a, a plurality of openings 204a may be provided in accordance with the number of gas nozzles 232a, or a wide and wide slit that can accommodate the plurality of gas nozzles 232a may be used.
A processing chamber 201 is formed inside the inner tube 204. In the processing chamber 201, a wafer 200 as a substrate is mounted on a susceptor 218 as a conductive material, and the susceptor 218 on which the wafer 200 is mounted can be stored in a state of being aligned in multiple stages in a horizontal posture in a vertical direction. It is configured.

A manifold 209 is disposed below the outer tube 205 concentrically with the outer tube 205. The manifold 209 is made of, for example, quartz (SiO 2), stainless steel, or the like, and is formed in a cylindrical shape with an upper end and a lower end opened. The manifold 209 is provided to support the outer tube 205 and the inner tube 204. An O-ring 309 as a seal member is provided between the manifold 209 and the outer tube 205. Since the manifold 209 is supported by a holding body (not shown), the outer tube 205 is installed vertically. In this way, a reaction vessel is formed by the outer tube 205 and the manifold 209.
The manifold 209 is not limited to being provided separately from the outer tube 205, and the manifold 209 may not be provided individually as an integral part of the outer tube 205.

  A gas supply pipe 232 and a gas exhaust pipe 231 are provided on the outer wall of the manifold 209. The gas supply pipe 232 is provided so as to communicate with the space between the outer tube 205 and the inner tube 204. The gas exhaust pipe 231 is provided so as to communicate with the space inside the inner tube 204. Therefore, the gas supplied from the gas supply pipe 232 passes through the space between the outer tube 205 and the inner tube 204, enters the inner tube 204 from the opening 204 a on the side surface of the inner tube 204, and reaches the lower end of the inner tube 204. The gas exhaust pipe 231 can be removed from the opening.

  A gas nozzle 232 a communicates with the gas supply pipe 232, and the gas nozzle 232 a is erected in a vertical direction in a space between the outer tube 205 and the inner tube 204. The gas nozzle 232a includes one or a plurality of gas nozzles. The gas nozzle 232a is provided with a plurality of gas supply holes 232b on the inner tube 204 side. Preferably, the gas supply port 232b has a predetermined height from the height of the upper surface of the wafer 200 in a gap on each wafer 200 so that gas can be uniformly supplied to each of the plurality of wafers 200 mounted on the boat 217. It is good to provide each at the height position.

The gas supply pipe 232 is divided into three on the upstream side, and the first gas supply source 180 and the second gas supply are provided via valves 177, 178 and 179 and MFCs 183, 184 and 185 as gas flow rate control devices. A source 181 and a third gas supply source 182 are connected to each other. A gas flow rate control unit 235 is electrically connected to the MFCs 183, 184, 185 and the valves 177, 178, 179 so that the flow rate of the supplied gas is controlled at a desired timing. It is configured.
A vacuum exhaust device 246 such as a vacuum pump is connected to the downstream side of the gas exhaust pipe 231 via a pressure sensor (not shown) as a pressure detector and an APC valve 242 as a pressure regulator.
A pressure control unit 236 is electrically connected to the pressure sensor and the APC valve 242, and the pressure control unit 236 adjusts the opening degree of the APC valve 242 based on the pressure detected by the pressure sensor. Control is performed at a desired timing so that the pressure in the processing chamber 201 becomes a desired pressure.

Below the manifold 209, the seal cap 219 is provided as a furnace port lid for hermetically closing the lower end opening of the manifold 209. The seal cap 219 is made of, for example, a metal such as stainless steel and is formed in a disk shape. On the upper surface of the seal cap 219, an O-ring 301 is provided as a seal member that contacts the lower end of the manifold 209.
The seal cap 219 is provided with a rotation mechanism 254.
A rotation shaft 255 of the rotation mechanism 254 passes through the seal cap 219 and is connected to the boat 217, and is configured to rotate the wafer 200 by rotating the boat 217.
The seal cap 219 is configured to be moved up and down in a vertical direction by a lifting motor 248 described later as a lifting mechanism provided on the outside of the processing furnace 202, and thereby the boat 217 is carried into and out of the processing chamber 201. It is possible.
A drive control unit 237 is electrically connected to the rotation mechanism 254 and the lift motor 248, and is configured to control at a desired timing so as to perform a desired operation.

  The induction heating device 206 is provided with a spirally formed RF coil 2061 divided into a plurality of upper and lower regions (zones). For example, as shown in FIG. 2, the lower zone is divided into five zones such as an RF coil 2061L, an RF coil 2061CL, an RF coil 2061C, an RF coil 2061CU, and an RF coil 2061U. . Each RF coil 2061 is configured to be independently controllable.

A temperature control unit 238 is electrically connected to the blower 2065.
The temperature control unit 238 is configured to control the operation of the blower 2065 in accordance with a preset operation recipe. By operating the blower 2065, the atmosphere in the gap between the wall body 2062 and the outer tube 205 is discharged from the opening 2066. After being discharged from the opening 2066, it is cooled through the radiator 2064 and discharged to equipment (not shown) on the downstream side of the blower 2065. That is, when the blower 2065 operates, the induction heating device 206 and the outer tube 205 can be cooled.

  The cooling medium supply unit and the cooling medium exhaust unit connected to the cooling wall 2063 are controlled by the controller 240 at a predetermined timing so that the flow rate of the cooling medium to the cooling wall 2063 becomes a desired cooling condition. It is configured. It is more preferable to provide the cooling wall 2063 because it is easier to suppress heat radiation to the outside of the processing furnace 202 and the outer tube 205 is more easily cooled. However, the cooling condition by cooling the blower 2065 is desired. The cooling wall 2063 may not be provided as long as the cooling condition can be controlled.

At the upper end of the wall body 2062, apart from the opening 2066, an explosion diffusion port and an explosion diffusion port opening / closing device 2067 for opening and closing the explosion diffusion port are provided.
When hydrogen gas and oxygen gas are mixed and ignited in the wall body 2062 and an explosion occurs, a predetermined pressure is applied to the wall body 2062, so that a place with relatively weak strength, for example, the wall body 2062 is attached. The formed bolts, screws, panels, etc. will be destroyed and scattered, increasing the damage. In order to minimize this damage, the explosion vent opening / closing device 2067 is configured to open the explosion vent and release the pressure at a predetermined pressure or higher when an explosion occurs in the wall 2062. Yes.

As shown in FIG. 7, a radiation thermometer 263 as a temperature detector for detecting the temperature in the processing chamber 201 is provided outside the manifold 209, and the condensing unit 301 of the radiation thermometer 263 is connected to the outer tube 205. In the space between the inner tubes 204, it stands upright in the vertical direction. The condensing part 301 is a quartz cylinder or prismatic rod made of quartz, and the condensing side end surface 301a of the quartz rod is flat, has no focal point, is a surface extending in the vertical direction, and is oriented in the horizontal direction. ing.
In the example of FIG. 7, the light guiding quartz rod constituting the condensing unit 301 extends in the horizontal direction from the outside of the manifold 209, penetrates the manifold 209, rises in the vertical direction inside the manifold 209, and is quartz rod. It is bent in the horizontal direction near the tip. Since the end surface 301a of the quartz rod is a flat surface in the vertical direction, the light incident on the end surface 301a of the quartz rod is within the range of a conical optical axis of about 40 degrees as indicated by an arrow 301b shown in FIG. Limited to. Light within the optical axis range indicated by the arrow 301b is captured without being reflected by the end surface 301a, but light outside the optical axis range indicated by the arrow 301b is totally reflected by the end surface 301a.
Therefore, by condensing the light from the plurality of induction heating bodies 218 at the same time, it is possible to simultaneously monitor a region where the plurality of induction heating bodies 218 are present. Without being influenced, it becomes possible to measure an accurate temperature in a region where the plurality of induction heating bodies 218 are present. Since accurate temperature measurement in real time is possible, the response speed can be improved, and a plurality of substrates can be processed at an accurate temperature.

  In addition, since the condensing unit 301 is disposed inside the reaction tube 205 and on the side of the periphery of the plurality of induction heating bodies 218 in the reaction tube 205, it is closer to the induction heating body 218. Can be measured. The condensing unit 301 is more susceptible to the atmosphere and the like as the distance from the induction heating body 218 increases. It is possible to measure the correct temperature.

In addition, the plurality of induction heating bodies 218 are held by the boat 217 that is the derivative support, but even if the measurement target is displaced due to thermal expansion of the derivative support 217, the plurality of induction heating bodies is performed. By condensing the light from 218 at the same time, it is possible to measure the accurate temperature of the region where the plurality of induction heating bodies 218 are present. For example, in the case of silicon carbide (SiC), when the linear expansion coefficient is about 5 × 10 ⁻³ (/ K), the boat length of the boat 217 supporting the susceptor 218 is 1000 mm, and the heating temperature is 1000 ° C., the deviation is 5 mm.

  In the example of FIG. 7, the radiation thermometer 301 is configured such that the wavelength of the condensed light is in a range of 1 μm to 2 μm and can be measured in a temperature range of 350 ° C. to 1600 ° C. Therefore, the peak wavelength in the above temperature range can be captured, and the temperature can be accurately measured. Further, for example, when the reaction tube 205 is made of transparent quartz, it is possible to accurately measure the light transmitted from the side of the reaction tube 205 through the wall surface of the reaction tube.

Further, a film having an emissivity equal to or higher than the film formed on the substrate in the reaction tube 205 may be formed on the surface of the light collecting unit 301 in advance. it can.
When the film is formed on the substrate in the reaction tube 205, the same film as the film formed on the substrate is formed on the surface of the light collecting unit 301 in the reaction tube 205, and the amount of light collected. Changes extremely (decreases), and the radiation thermometer 263 needs to be corrected. However, according to the above configuration, since the film having the same or higher emissivity as the film to be processed on the substrate is formed on the surface of the condensing unit 301 in advance, the emissivity of the condensing unit 301 is reduced. In the case where the same film as the film formed on the substrate is formed on the surface of the light collecting unit 301 when the film is formed on the substrate, the amount of light collected by the light collecting unit 301 is reduced. It can suppress changing.

  A temperature control unit 238 is electrically connected to the induction heating device 206 and the radiation thermometer 263, and based on the temperature information detected by the radiation thermometer 263, the degree of energization to the induction heating device 206 is adjusted. Thus, the temperature in the processing chamber 201 is controlled at a desired timing so as to have a desired temperature distribution.

Next, the 1st modification which changed the example of FIG. 7 is demonstrated using FIG. In FIG. 8, the radiation thermometer 263 and the light collecting unit 302 are installed outside the reaction tube 205. Except for the installation mode of the radiation thermometer 263 and the condensing part 302, it is the same as the example of FIG. As in the example of FIG. 7, the condensing unit 302 is a quartz cylindrical or prismatic rod, and the end surface 302a of the quartz rod is a flat surface extending in the vertical direction and facing the horizontal direction. ing.
In the first modification shown in FIG. 8, the quartz rod constituting the condensing unit 302 extends through the wall body 2062 of the induction heating device 206 in the horizontal direction, and between the wall body 2062 and the reaction tube 205, The end face 302a of the quartz rod is positioned. Since the end surface 302a of the quartz rod is a flat surface in the vertical direction, similarly to the example of FIG. 7, the light from the plurality of induction heating bodies 218 is condensed simultaneously, thereby the plurality of induction heating bodies. Since a certain region can be monitored at the same time, it is possible to measure an accurate temperature in the region where the plurality of induction heating bodies 218 are present without being influenced by a sudden temperature fluctuation that occurs locally. It becomes possible. Since accurate temperature measurement in real time is possible, the response speed can be improved, and a plurality of substrates can be processed at an accurate temperature.

  According to the configuration of the first modification shown in FIG. 8, the condensing unit 302 is disposed outside the reaction tube 205 and on the side of the periphery of the plurality of induction heating bodies 218 in the reaction tube 205. The light from the plurality of induction heating bodies 218 transmitted through the wall of the reaction tube 205 can be collected without exposing the condensing unit 302 to the atmosphere in the reaction tube 205.

  Further, in the first modified example shown in FIG. 8, the condensing unit 302 is arranged so that incident light from the induction heating body 218 to the condensing unit 302 is not blocked by the RF coil 2061 that is the induction heating body. ing. As described above, since the condensing unit 302 is arranged so that the incident light beam from the induction heating body 218 to the condensing unit 302 is not blocked by the coil-shaped induction heating unit 2061, a plurality of induction heatings are performed. The light from the body 218 can be reliably collected at the same time.

Next, the 2nd modification which changed the example of FIG. 7 is demonstrated using FIG. In FIG. 9, the radiation thermometer 263 and the condenser 303 are installed outside the reaction tube 205. Except for the installation mode of the radiation thermometer 263 and the condensing part 303, it is the same as the example of FIG.
In the second modification shown in FIG. 9, the light condensing unit 303 is configured by a lens that can condense light at a wide angle. By condensing light at a wide angle, light from a plurality of induction heating bodies 218 can be condensed at the same time as in the example of FIG. Since it can be monitored, it is possible to measure the accurate temperature in a region where the plurality of induction heating bodies 218 are present without being influenced by the sudden temperature fluctuation that occurs locally. Since accurate temperature measurement in real time is possible, the response speed can be improved, and a plurality of substrates can be processed at an accurate temperature.

  In the second modified example shown in FIG. 9, as schematically shown in FIG. 13, the focal position 303 a of the light collecting unit 303 is a position between the reaction tube 205 and the light collecting unit 303. In this way, since the focal position of the condensing unit 303 is a position between the reaction tube 205 and the condensing unit 303, the focal point spreads inside the reaction tube 205, and a wider range of light is collected. Can do. By collecting light over a wider range, it is possible to simultaneously collect light from a larger number of the induction heating bodies 218 and to measure the accurate temperature of the induction heating bodies 218. In FIG. 13, the inner tube 204, the manifold 209, and the like are omitted.

  Alternatively, in the second modified example shown in FIG. 9, as schematically shown in FIG. 13, the focal position 303 b of the light collector 303 is in the radial direction of the reaction tube 205 and the side where the light collector 303 is disposed. Is the opposite position. In this way, since the focal position of the condensing unit 303 is a position opposite to the side where the condensing unit 303 is arranged in the radial direction of the reaction tube 205, a wide range of light can be collected. it can. By condensing a wide range of light, it is possible to measure the accurate temperature of the induction heating body 218.

  According to the configuration of the second modification shown in FIG. 9, the condensing part 303 is disposed outside the reaction tube 205 and on the side of the periphery of the plurality of induction heating bodies 218 in the reaction tube 205. The light from the plurality of induction heating bodies 218 transmitted through the wall of the reaction tube 205 can be collected without exposing the light collecting unit 303 to the atmosphere in the reaction tube.

7 to 9, the controller 240 corrects the emissivity of the induction heating body 218 based on Planck's law with respect to the measurement result of the radiation thermometer 263, and uses the correction result. The induction heating body 218 is controlled by obtaining an accurate temperature of the measurement object. The correction value of emissivity is obtained in advance through experiments and stored in the storage unit of the controller 240.
When the measurement point (focal point) of the lens that is the condensing unit is not aligned with the induction heating body, or when a quartz rod with a flat end surface is used as the condensing unit, the amount of energy input to the control unit of the radiation thermometer is Depending on the Planck's law, the emissivity is smaller than the measurement result in an ideal installation environment, depending on the emissivity of the object to be measured, the loss due to the light transmitting object such as quartz, the focal position of the lens, etc. It can be corrected to obtain an accurate temperature.

Specifically, it may be obtained as follows.
Prior to processing the substrate, the thermocouple is placed in contact with the peripheral portion of the induction heating body 218 in the processing chamber 201, and the induction heating body 218 when the temperature detected by the thermocouple is stabilized. The detection temperature of the thermocouple at the peripheral edge of the sensor and the detection temperature of the radiation thermometer 263 installed so as to detect the temperature of the same induction heating body 218 are obtained, and the detection temperature of the thermocouple and the detection of the radiation thermometer 263 are obtained. By substituting the temperature into Planck's law equation (1), the corrected emissivity, that is, the correct emissivity of the induction heating body 218 is obtained.

Lb (λ, T) = C ₁ · λ ⁻⁵ · [exp (C ₂ / λT) −1] ⁻¹ (1)

Here, C ₁ is a first constant of radiation, C ₁ = 1.1911 × 10 ⁸ (W · μm ⁴ m ⁻² sr ⁻¹ ), C ₂ is a second constant of radiation, and C ₂ = 1.4388 × 10 ⁴ (μm · K), λ is a wavelength (unit: μm).
The temperature when the temperature detected by the thermocouple is stable may be set any number of times as long as it is lower than the heat-resistant temperature of the thermocouple, but preferably the temperature at which the substrate is processed (processing temperature). By setting at, a more accurate correction value can be obtained.

  When processing the substrate, the thermocouple installed at the peripheral portion of the to-be-derivatized 218 in the processing chamber 201 is removed, the corrected emissivity obtained as described above is set in the radiation thermometer 263, and the radiation temperature when processing the substrate The accurate temperature of the induction heating body 218 can be obtained from the temperature detected by the total 263.

As for the wavelength (λ), it is possible to obtain the virtual temperature value with higher accuracy if it is calculated in the whole wavelength region. However, since the calculation formula becomes complicated and hinders the control, It is preferable to calculate using only the wavelength at which Lb (λ, T) peaks.
For example, a thermocouple is installed in contact with the periphery of the induction heating body 218 in the processing chamber 201, and the thermocouple at the periphery of the induction heating body 218 when the temperature detected by the thermocouple is stabilized. It is assumed that the detected temperature is 577.2 ° C., and the set emissivity of the radiation thermometer 263 at this time is 19%. From the characteristics of the induction heating body 218, 0.9 μm is used as the wavelength (λ) at which the energy Lb (λ, T) takes a peak. Further, it is assumed that the temperature detected by the thermocouple at this time is 648.6 ° C. By substituting these values into the equation (1) and assuming the corrected emissivity to be X, the energy obtained from the detected temperature of the thermocouple is expressed by the following equation (2) and obtained from the detected temperature of the radiation thermometer 263. The energy is represented by the following formula (3).
Lb (λ, T) = C ₁ · λ ⁻⁵ · [exp (C ₂ / λT ₂ ) −1] ⁻¹ (2)
Here, T ₂ = 577.2 + 273.
Lb (λ, T) = (X / 19) · C ₁ · λ ⁻⁵ · [exp (C ₂ / λT ₃ ) −1] ⁻¹ (3)
Here, T ₃ = 648.6 + 273.
Since the energies of the equations (2) and (3) are equal, X = 4.43 is obtained.

When processing the substrate, the thermocouple installed at the periphery of the derivative 218 in the processing chamber 201 is removed, and the corrected emissivity 4.43% obtained above is set in the radiation thermometer 263 to process the substrate. The exact temperature of the induction heating body 218 can be obtained from the temperature detected by the radiation thermometer 263.
In this way, the emissivity is corrected based on Planck's law and an accurate temperature is obtained, so that the induction heating body can be controlled more accurately.

FIG. 14 is a diagram illustrating experimental results in which the emissivity is corrected. In FIG. 14, the vertical axis represents temperature (° C.) and the horizontal axis represents the relative value (%) of induction heating power (RF power). 14 is a result of temperature measurement with the thermocouple directly attached to the peripheral portion of the susceptor, and shows an accurate temperature. 15a is a result of temperature measurement using a lens for the condensing unit, and is temperature data when the emissivity is 19% before correction. 15b is a correction of the emissivity in the case of 15a, and is temperature data when the emissivity is 11.7% after correction. 16a is a result of temperature measurement using a quartz rod for the condensing part, and is temperature data when the emissivity is 19% before correction. 16b is obtained by correcting the emissivity in the case of 16a, and is temperature data when the emissivity is 4.7% after correction.
As shown in FIG. 14, temperature data 15b when the temperature is measured using a lens for the condensing part and the emissivity is corrected, and when the temperature is measured using a quartz rod for the condensing part and the emissivity is corrected. The temperature data 16b substantially coincides with the temperature data 14 measured by directly attaching the thermocouple to the peripheral portion of the susceptor. Thus, an accurate temperature can be obtained by correcting the emissivity based on Planck's law.

  7 to 9, the radiation thermometer 263 is installed at one place, but preferably it is installed at a plurality of places. When installed in a plurality of places, the temperature controllability can be improved.

Next, the configuration of the boat 217 and the susceptor 218 will be described.
The boat 217 as a support to be guided includes a disk-shaped bottom plate, a disk-shaped top plate, and three to four columns made of quartz that connect the bottom plate and the top plate. As shown in FIGS. 10 and 11, each support column 2171 is formed with a holding portion 2171 a that supports a susceptor 218 as a support for supporting a substrate protruding from the support column 2171 toward the center axis side of the boat 217. Has been.

  As shown in FIGS. 10 and 11, the susceptor 218 as a support is formed in a disk shape having a larger diameter than the wafer 200, and is formed on the peripheral portion 218 b of the susceptor 218 and the main surface of the disk. It is comprised from the recessed part 218a. The recess 218 a is formed with a diameter slightly larger than the diameter of the wafer 200. The recess 218a is formed so that at least the peripheral edge of the back surface of the wafer 200 can be in close contact. The wafer 200 is accommodated in the recess 218a, so that when the susceptor 218 is held in a plurality of stages on the boat 217, the distance between the susceptors 218 adjacent in the vertical direction can be reduced.

In particular, the temperature in the gap between the upper and lower adjacent susceptors 218 decreases due to the thermal effect of the low temperature region between the outer tube 205 and the boat 217, but is configured to be housed in the recess 218 a. As a result, the distance between the upper and lower adjacent susceptors 218 can be reduced, and the gas flowing between the upper and lower adjacent susceptors 218 can be heated substantially uniformly and generated on the wafer 200. The uniformity of the film thickness and film quality can be improved.
The susceptor 218 is more preferably formed in a disk shape because it is easy to uniformly heat the wafer 200 in the circumferential direction, but the main surface is polygonal even if the main surface is a plate shape formed in an ellipse. Even if it is a plate shape formed by (1), it is applicable to the present embodiment.

The susceptors 218 are held horizontally by being held by the holding portions 2171a of the columns 2171, respectively.
The susceptor 218 is provided independently of the support 2171 and can be attached and detached. The material of the susceptor 218 is made of a conductive material (carbon or carbon graphite) whose surface is coated with silicon carbide (SiC).

  As shown in FIG. 2, a heat insulating cylinder 216 as a cylindrical heat insulating member made of, for example, quartz (SiO 2) as a heat resistant material is disposed at the lower portion of the boat 217, and the induction heating device 206 This heat is configured to be difficult to be transmitted to the manifold 209 side. The heat insulating cylinder 216 may be provided integrally with the boat 217 without being provided separately from the boat 217, or a plurality of heat insulating plates may be provided below the boat 217 instead of the heat insulating cylinder 216. Also good.

Further, the boat 217 will be described in detail.
The boat 217 is preferably made of a high-purity material that does not emit contaminants in order to suppress contamination of impurities into the film during the film-forming process on the wafer 200 in the processing chamber 201. In addition, when a material having a high thermal conductivity is used, the quartz heat insulating cylinder 216 at the lower part of the boat 217 is thermally deteriorated. Therefore, a material having a low thermal conductivity is preferable. Furthermore, since it is better to suppress the thermal influence from the boat 217 on the wafer 200 placed on the susceptor 218, it is preferable that the material is not induction heated by the induction heating device 206. It is conceivable to select a quartz material that satisfies these conditions. However, when a quartz material is simply used, the boat 217, particularly the holding unit 2171 a, can be directly removed from the susceptor 218 when performing a process for processing the wafer 200 while maintaining the temperature of the susceptor 218 at 100 ° C. to 1200 ° C. There is a problem that heat conduction causes thermal degradation. Therefore, in the case of the quartz boat 217, it is preferable to provide a heat conduction moderating substance 2171Z having low thermal conductivity in the holding portion 2171a as shown in FIG. As the thermal conduction relaxing substance, a silicon nitride sintered body or the like can be considered. In addition, it is preferable to provide a heat conduction mitigating material at least on the contact surface with the susceptor 218.
The boat 217 can be loaded with 50 to 100 susceptors 218 and wafers 200 by installing one susceptor 218 on each holding portion 2171a and one wafer 200 on each susceptor 218. It has become.

  In the configuration of the processing furnace 202, the first processing gas is supplied from the first gas supply source 180 and the flow rate thereof is adjusted by the MFC 183, and then the gas is supplied to the processing gas through the gas supply pipe 232 through the valve 177. It is introduced into the chamber 201. The second processing gas is supplied from the second gas supply source 181, the flow rate of which is adjusted by the MFC 184, and then introduced into the processing chamber 201 via the gas supply pipe 232 via the valve 178. The third processing gas is supplied from the third gas supply source 182, the flow rate of which is adjusted by the MFC 185, and then introduced into the processing chamber 201 through the gas supply pipe 232 through the valve 179. The gas in the processing chamber 201 is exhausted through the gas exhaust pipe 231 to the vacuum pump 246.

Next, the configuration around the processing furnace of the substrate processing apparatus used in the present invention will be described.
A lower substrate 245 is provided on the outer surface of the load lock chamber 140 as a spare chamber. The lower substrate 245 is provided with a guide shaft 264 that fits with the lifting platform 249 and a ball screw 244 that screws with the lifting platform 249. The upper substrate 247 is provided on the upper ends of the guide shaft 264 and the ball screw 244 that are erected on the lower substrate 245. The ball screw 244 is rotated by an elevating motor 248 provided on the upper substrate 247. The lifting platform 249 is configured to move up and down as the ball screw 244 rotates.

  A hollow elevating shaft 250 is vertically suspended from the elevating table 249, and a connecting portion between the elevating table 249 and the elevating shaft 250 is airtight. The elevating shaft 250 moves up and down together with the elevating table 249. The lifting shaft 250 penetrates the top plate 251 of the load lock chamber 140. The through hole of the top plate 251 through which the elevating shaft 250 penetrates has a sufficient margin so as not to contact the elevating shaft 250. A bellows 265 as a hollow elastic body having elasticity is provided between the load lock chamber 140 and the lift platform 249 so as to cover the periphery of the lift shaft 250 in order to keep the load lock chamber 140 airtight. The bellows 265 has a sufficient amount of expansion / contraction that can correspond to the amount of elevation of the lifting platform 249, and the inner diameter of the bellows 265 is sufficiently larger than the outer shape of the lifting / lowering shaft 250 so that it does not come into contact with the expansion / contraction of the bellows 265. Yes.

  A lifting substrate 252 is fixed horizontally to the lower end of the lifting shaft 250. A drive unit cover 253 is airtightly attached to the lower surface of the elevating substrate 252 via a seal member such as an O-ring. The elevating board 252 and the drive unit cover 253 constitute a drive unit storage case 256. With this configuration, the inside of the drive unit storage case 256 is isolated from the atmosphere in the load lock chamber 140.

  A rotation mechanism 254 of the boat 217 is provided inside the drive unit storage case 256, and the periphery of the rotation mechanism 254 is cooled by the cooling mechanism 257.

  The power supply cable 258 is led from the upper end of the lifting shaft 250 through the hollow portion of the lifting shaft 250 to the rotating mechanism 254 and connected thereto. The cooling mechanism 257 and the seal cap 219 are provided with a cooling flow path 259, and a cooling water pipe 260 for supplying cooling water is connected to the cooling flow path 259. It passes through the hollow part.

  The elevating motor 248 is driven and the ball screw 244 rotates to raise and lower the drive unit storage case 256 via the elevating platform 249 and the elevating shaft 250.

  As the drive unit storage case 256 rises, the seal cap 219 provided in an airtight manner on the elevating substrate 252 closes the furnace port 161, which is an opening of the process furnace 202, so that wafer processing is possible. When the drive unit storage case 256 is lowered, the boat 217 is lowered together with the seal cap 219, and the wafer 200 can be carried out to the outside.

  The gas flow rate control unit 235, the pressure control unit 236, the drive control unit 237, and the temperature control unit 238 are electrically connected to a main control unit 239 that controls the entire substrate processing apparatus together with an operation unit and an input / output unit (not shown). Yes. These gas flow rate control unit 235, pressure control unit 236, drive control unit 237, temperature control unit 238, and main control unit 239 are configured as a controller 240.

  Next, a method of forming a semiconductor film such as Si by a CVD reaction on a substrate such as the wafer 200 as a step of the substrate manufacturing process using the processing furnace 202 having the above configuration will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 240.

  When the plurality of susceptors 218 on which the wafers 200 are placed are loaded into the boat 217, as shown in FIG. 2, the boat 217 holding the plurality of susceptors 218 is moved up and down by the lifting motor 248 and the lifting platform 249. The shaft 250 is moved up and down (boat loading) into the processing chamber 201. In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring.

The processing chamber 201 is evacuated by the vacuum evacuation device 246 so as to have a desired pressure. At this time, the pressure in the processing chamber 201 is measured by a pressure sensor, and the pressure regulator 242 is feedback-controlled based on the measured pressure. For example, a predetermined pressure is selected from pressures from 13300 Pa to around 0.1 MPa.
The blower 2065 is operated, gas or air flows between the induction heating device 206 and the outer tube 205, and the side wall of the outer tube 205 is cooled. Cooling water as a cooling medium flows through the radiator 2064 and the cooling wall 2063, and the inside of the induction heating device 206 is cooled through the wall body 2062.
Further, a high frequency current is applied to the induction heating device 206 so that the wafer 200 has a desired temperature, and an induced current is generated in the susceptor 218.

At this time, the state of energization to the induction heating device 206 is feedback-controlled based on the temperature information detected by the radiation thermometer 263 so that the inside of the processing chamber 201 has a desired temperature distribution. At this time, the blower 2065 is controlled by a preset control amount so that the temperature of the side wall of the outer tube 205 is cooled to, for example, 600 ° C. or lower, which is much lower than the temperature at which the film is grown on the wafer 200. . The wafer 200 is heated to 1100 ° C., for example. Note that the wafer 200 is heated at a constant temperature among the processing temperatures selected in the range of 700 ° C. to 1200 ° C. At this time, the blower 2065 is disposed on the side wall of the outer tube 205 at any processing temperature. The temperature is controlled by a preset control amount so as to be cooled to, for example, 600 ° C. or lower, which is much lower than the temperature at which the film is grown on the wafer 200.
Subsequently, the boat 217 is rotated by the rotation mechanism 254, whereby the susceptor 218 and the wafer 200 placed on the susceptor 218 are rotated.

  The first gas supply source 180, the second gas supply source 181, and the third gas supply source 182 include a silicon-containing gas such as trichlorosilane (SiHCl 3) gas as a processing gas and boron as a dopant gas. For example, diborane (B 2 H 6) gas and hydrogen (H 2) as a carrier gas are enclosed, respectively. When the temperature of the wafer 200 is stabilized, the respective processing gases are supplied from the first gas supply source 180, the second gas supply source 181, and the third gas supply source 182. After the openings of the MFCs 183, 184, and 185 are adjusted so as to obtain a desired flow rate, the valves 177, 178, and 179 are opened, and each processing gas flows through the gas supply pipe 232 and is supplied to the processing chamber 201. Is done. The gas supplied to the processing chamber 201 passes through the processing chamber 201 and is exhausted to the gas exhaust pipe 231. When the processing gas passes through the gap between the susceptors 218, the processing gas is heated from the vertically adjacent susceptors 218, comes into contact with the heated wafer 200, and a semiconductor such as Si is formed on the surface of the wafer 200 by a CVD reaction. A film is formed.

  When a preset time elapses, an inert gas is supplied from an inert gas supply source (not shown), the inside of the processing chamber 201 is replaced with the inert gas, and the pressure in the processing chamber 201 is returned to normal pressure. The

  Thereafter, the seal cap 219 is lowered by the elevating motor 248, the lower end of the manifold 209 is opened, and the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the outer tube 205 while being held by the boat 217 ( Boat unloading). Thereafter, the processed wafer 200 is taken out from the boat 217 (wafer discharge).

  As mentioned above, although this invention was demonstrated based on the Example of this invention, this invention is not limited to this. The semiconductor film formation conditions described in the embodiments of the invention are merely examples, and can be changed as appropriate. For example, in the case of forming an epitaxial layer made of a silicon single crystal thin film, SiH4, Si2H6, SiH2Cl2, SiHCl3, SiCl4, etc. can be used as source gases as Si-based and SiGe-based materials, and on a substrate such as GaAs. An epitaxial layer made of various compound semiconductor layers can also be formed. As the doping gas, B2H6, BCl3, PH3, or the like can also be used.

  In the above-described embodiment, the standby chamber has been described with an example in which a load-lock chamber capable of vacuum replacement is applied. However, in the case of performing a process in which the natural oxide film adheres to the substrate or the like, a vacuum is used. Instead of the replaceable load lock chamber, the load lock chamber may be cleaned without being replaced by a vacuum composed of a nitrogen gas atmosphere or a clean air atmosphere. In that case, the housing may be simply a housing instead of a pressure housing.

  In the susceptor holding mechanism, the pin hole is provided in the susceptor 218 as shown in FIGS. 4 to 6, and the push pin inserted into the pin hole and the push pin raising / lowering mechanism are provided. However, the present invention is not limited to this. For example, without providing a pin hole, a push-up pin, or a push-up pin raising / lowering mechanism, the tweezer can hold even a region having no problem in film formation characteristics on the wafer surface on the upper surface of the wafer 200 to hold the susceptor and the tweezer. The wafer 200 may be loaded and unloaded in between.

  In the embodiment, the susceptor 218 is used as the induction heating body. However, a plurality of induction heating bodies are provided separately from the boat 217 so that the wafer 200 is mounted on the boat 217 and corresponds to each wafer 200. You may make it mount in the support body for induction heating bodies.

Further, the CVD apparatus has been described as an example, but the present invention can also be applied to other substrate processing apparatuses such as epitaxial growth, ALD, oxidation, diffusion, and annealing apparatus.
The present invention is not limited to the above embodiments, and it goes without saying that various modifications can be made without departing from the scope of the invention.

The present invention can be understood from at least the following aspects.
The first aspect of the present invention is:
A reaction tube for accommodating and processing a plurality of substrates;
A plurality of stacked induction heating bodies provided inside the reaction tube and heating a plurality of substrates;
A condensing unit that condenses the light from the plurality of induction heating bodies at the same time, and based on the light from the induction heating body that the condensing unit condenses the temperature of the plurality of induction heating bodies; A radiation thermometer to measure,
A substrate processing apparatus comprising: an induction heating body that is provided outside the reaction tube and that induction-heats the induction heating body based on temperature information measured by the radiation thermometer.
According to this configuration, since the light from the plurality of induction heating bodies is simultaneously condensed by the light collecting unit, the region where the plurality of induction heating bodies can be simultaneously monitored. It is possible to measure a more accurate temperature in a region where the plurality of induction heating bodies are present without being influenced by the sudden temperature fluctuation that occurs. Since more accurate temperature measurement is possible in real time, the response speed can be improved, and a plurality of substrates can be processed at a more accurate temperature.

The second aspect of the present invention is
Transporting a plurality of substrates into a reaction tube;
Conveying a plurality of induction heating bodies into the reaction tube;
Heat-treating the plurality of substrates by induction heating the plurality of induction heating bodies in the reaction tube using an induction heating body provided outside the reaction tube;
Condensing light from the plurality of induction heating bodies simultaneously;
Measuring the temperature of the plurality of induction heating bodies based on the light from the plurality of induction heating bodies condensed simultaneously.
According to this configuration, by simultaneously collecting the light from the plurality of induction heating bodies, it is possible to simultaneously monitor a region where the plurality of induction heating bodies are present, and thus a sudden temperature generated locally It becomes possible to measure a more accurate temperature in a region where the plurality of induction heating bodies are present without being influenced by fluctuations. Since more accurate temperature measurement is possible in real time, the response speed can be improved, and a plurality of substrates can be processed at a more accurate temperature. As a result, a high-quality substrate can be manufactured.

The third aspect of the present invention is
Transporting a plurality of substrates into a reaction tube;
Conveying a plurality of induction heating bodies into the reaction tube;
Heating the plurality of substrates by inductively heating a plurality of induction heating bodies in the reaction tube using an induction heating body provided outside the reaction tube;
Condensing light from the plurality of induction-heated bodies that have been induction-heated simultaneously;
Measuring the temperature of the plurality of induction heating bodies based on the light from the plurality of induction heating bodies condensed at the same time;
And heating the induction heating body based on the measured temperature information.
According to this configuration, by simultaneously collecting the light from the plurality of induction heating bodies, it is possible to simultaneously monitor a region where the plurality of induction heating bodies are present, and thus a sudden temperature generated locally It becomes possible to measure a more accurate temperature in a region where the plurality of induction heating bodies are present without being influenced by fluctuations. Since more accurate temperature measurement is possible in real time, the response speed can be improved, and a plurality of substrates can be processed at a more accurate temperature. As a result, a high-quality substrate can be processed.

The fourth aspect of the present invention is
Transporting a plurality of substrates into a reaction tube;
Conveying a plurality of induction heating bodies into the reaction tube;
Heat-treating the plurality of substrates by induction heating the plurality of induction heating bodies in the reaction tube using an induction heating body provided outside the reaction tube;
Condensing light from the plurality of induction-heated bodies that have been induction-heated simultaneously;
Measuring the temperature of the plurality of induction heating bodies based on the light from the plurality of induction heating bodies condensed at the same time;
A method of heating the induction heating body based on the measured temperature information, or a method of manufacturing a solar cell.
According to this configuration, by simultaneously collecting the light from the plurality of induction heating bodies, it is possible to simultaneously monitor a region where the plurality of induction heating bodies are present, and thus a sudden temperature generated locally It becomes possible to measure a more accurate temperature in a region where the plurality of induction heating bodies are present without being influenced by fluctuations. Since more accurate temperature measurement is possible in real time, the response speed can be improved, and a plurality of substrates can be processed at a more accurate temperature. As a result, a high-quality semiconductor device or a solar cell can be manufactured.

The fifth aspect of the present invention provides
The condensing part is disposed outside the reaction tube and on the side of the periphery of the plurality of induction heating bodies in the reaction tube, and the plurality of induction heating bodies transmitted through the wall of the reaction tube The substrate processing apparatus according to the first aspect, which collects light from the first side.
According to this configuration, since the condensing part is disposed outside the reaction tube and on the peripheral side of the plurality of induction heating bodies in the reaction tube, the condensing part is exposed to the atmosphere in the reaction tube. In addition, light from the plurality of induction heating bodies that have passed through the wall of the reaction tube can be collected.

The sixth aspect of the present invention provides
The substrate processing apparatus according to the fifth aspect, wherein a focal position of the light collecting unit is a position between the reaction tube and the light collecting unit.
According to this configuration, since the focal position of the condensing unit is a position between the reaction tube and the condensing unit, the focal point spreads inside the reaction tube, and a wider range of light can be collected. . By collecting light over a wider range, it is possible to simultaneously collect light from a larger number of induction heating bodies, and to measure the accurate temperature of the induction heating bodies.

The seventh aspect of the present invention is
The substrate processing apparatus according to the fifth aspect, wherein a focal position of the light collecting portion is a position opposite to a side where the light collecting portion is disposed in a radial direction of the reaction tube.
According to this configuration, since the focal position of the condensing unit is a position opposite to the side where the condensing unit is arranged in the radial direction of the reaction tube, a wide range of light can be collected. By condensing a wide range of light, it is possible to measure the exact temperature of the induction heating body.

The eighth aspect of the present invention provides
The induction heating body is formed in a coil shape, and the condensing unit is disposed so that incident light from the induction heating body to the condensing unit is not blocked by the induction heating body. The substrate processing apparatus according to the fifth aspect.
According to this configuration, the condensing unit is arranged so that the incident light beam from the induction heating body to the condensing unit is not blocked by the coiled induction heating unit. Can reliably collect the light simultaneously.

The ninth aspect of the present invention provides
The substrate according to the first aspect, wherein the radiation thermometer has a wavelength of collected light in a range of 1 μm or more and 2 μm or less and can be measured in a temperature range of 350 ° C. or more and 1600 ° C. or less. Processing equipment.
According to this configuration, the peak wavelength in the above temperature range can be captured, and the temperature can be accurately measured. Further, for example, when the reaction tube is made of transparent quartz, it is possible to accurately measure the light transmitted through the wall surface of the reaction tube from the side of the reaction tube.

The tenth aspect of the present invention provides
A controller that corrects the emissivity of the induction heating body with respect to the measurement result of the radiation thermometer, obtains a correction temperature from the corrected emissivity, and controls the induction heating body based on the correction temperature. The substrate processing apparatus according to the first aspect.
According to this configuration, the controller corrects the emissivity of the induction heating body based on Planck's law and obtains the correction temperature, so that the induction heating body can be controlled more accurately.

The eleventh aspect of the present invention is
The substrate processing apparatus according to the first aspect, wherein the plurality of induction heating bodies are held by a derivative support.
According to this configuration, even if the to-be-derivatized support body is thermally expanded and the measurement point is deviated, the region where the plurality of to-be-induced heating bodies are present is obtained by simultaneously collecting light from the to-be-induced heating bodies. It becomes possible to measure the exact temperature of

The twelfth aspect of the present invention is
The said condensing part is a substrate processing apparatus as described in the said 1st side surface arrange | positioned inside the said reaction tube and the peripheral side of the several to-be-induced heating body in the said reaction tube.
According to this configuration, since the condensing part is disposed inside the reaction tube and on the side of the periphery of the plurality of induction heating bodies in the reaction tube, the measurement is performed in the vicinity of the induction heating body. can do. As the distance between the condensing part and the induction heating body increases, the condensing part is more susceptible to the atmosphere and the like. Can be measured.

The thirteenth aspect of the present invention provides
The substrate processing according to the twelfth aspect, wherein a film having an emissivity equal to or higher than a film formed on the substrate in the reaction tube is formed on a surface of the light collecting unit. apparatus.
When the film is formed on the substrate in the reaction tube, the same film as the film formed on the substrate is also formed on the surface of the light condensing part in the reaction tube, and the amount of collected light changes (decreases). However, correction of the radiation thermometer is necessary. However, according to this configuration, a film having an emissivity equal to or higher than that of the film processed on the substrate is formed on the surface of the condensing unit in advance, so that when the film is formed on the substrate, the film is collected. Even when the same film as the film formed on the substrate is formed on the surface of the optical part, it is possible to prevent the amount of light collected by the light collecting part from changing.

The fourteenth aspect of the present invention provides
In the state where there is no substrate in the reaction tube, a film forming gas for forming a film on the substrate is supplied into the reaction tube in advance, and a film forming process is performed on the substrate in the reaction tube on the surface of the light collecting unit. The induction heating is performed such that after forming a film having an emissivity equal to or higher than that of the first film, the substrate is loaded into the reaction tube to form the first film on the substrate. The substrate processing apparatus according to the twelfth aspect, comprising a controller that controls heating of the body.
According to this configuration, in the same reaction tube, by forming a film having an emissivity equal to or higher than the film formed on the substrate on the surface of the light collecting part, the light collecting part can be efficiently obtained. A film can be formed on the surface. In addition, a film can be formed on the surface of the light collecting portion immediately before film formation on the substrate, and the accuracy of the measurement temperature can be improved.

The fifteenth aspect of the present invention provides
An induction heating body formed in a disk shape and holding the substrate;
A to-be-derivatized support that vertically supports the induction-heated bodies so as to form an interval;
A reaction tube for accommodating the derivative support and processing a substrate held by the induction heating body supported by the derivative support; and
A radiation thermometer having at least a light collecting portion provided outside the reaction tube;
An induction heating body that is provided outside the reaction tube and induction-heats the induction heating body based on temperature information measured by the radiation thermometer,
The condensing part is formed with a lens structure, the focal position of the lens is outside the reaction tube, and the condensing part is configured to take in light at a wide angle when processing a substrate in the reaction tube. Substrate processing equipment.
According to this configuration, since the light from the plurality of induction heating bodies is simultaneously condensed by the light collecting unit, the region where the plurality of induction heating bodies can be simultaneously monitored. It is possible to measure a more accurate temperature in a region where the plurality of induction heating bodies are present without being influenced by the sudden temperature fluctuation that occurs. Since more accurate temperature measurement is possible in real time, the response speed can be improved, and a plurality of substrates can be processed at a more accurate temperature.

The sixteenth aspect of the present invention provides
An induction heating body formed in a disk shape and holding the substrate;
A to-be-derivatized support that vertically supports the induction-heated bodies so as to form an interval;
A reaction tube for accommodating the derivative support and processing a substrate held by the induction heating body supported by the derivative support; and
A radiation thermometer in which at least a condensing part is provided inside the reaction tube;
An induction heating body that is provided outside the reaction tube and induction-heats the induction heating body based on temperature information measured by the radiation thermometer,
The condensing part is formed of a quartz rod having a flat end surface, and the end surface of the quartz rod faces in the horizontal direction, and is outside the peripheral end of the induction heating body supported by the derivative support. A substrate processing apparatus that is arranged and configured such that when the substrate is processed in the reaction tube, the light collecting unit captures light at a wide angle.
According to this configuration, since the light from the plurality of induction heating bodies is simultaneously condensed by the light collecting unit, the region where the plurality of induction heating bodies can be simultaneously monitored. It is possible to measure a more accurate temperature in a region where the plurality of induction heating bodies are present without being influenced by the sudden temperature fluctuation that occurs. Since more accurate temperature measurement is possible in real time, the response speed can be improved, and a plurality of substrates can be processed at a more accurate temperature.

  DESCRIPTION OF SYMBOLS 110 ... Substrate container (cassette), 111 ... Case, 115 ... Boat elevator, 118 ... Cassette transfer device, 125 ... Substrate transfer mechanism, 200 ... Wafer, 201 ... Processing chamber, 202 ... Heat treatment furnace, 204 ... Inner tube 204a ... opening, 205 ... outer tube, 206 ... induction heating device, 231 ... gas exhaust pipe, 232 ... gas supply pipe, 232a ... gas nozzle, 232b ... gas supply hole, 217 ... boat, 218 ... induced heating body, 263 ... Radiation thermometer, 301 ... Condenser (quartz rod), 301a ... Quartz rod end surface, 302 ... Condenser (quartz rod), 302a ... Quartz rod end surface, 303 ... Condenser (lens), 2061 ... RF Coil, 2062 ... wall, 2063 ... cooling wall.

Claims (3)

A reaction tube for accommodating and processing a plurality of substrates;
A plurality of stacked induction heating bodies provided inside the reaction tube and heating a plurality of substrates;
A condensing unit that condenses the light from the plurality of induction heating bodies at the same time, and based on the light from the induction heating body that the condensing unit condenses the temperature of the plurality of induction heating bodies; A radiation thermometer to measure,
A substrate processing apparatus comprising: an induction heating body that is provided outside the reaction tube and that induction-heats the induction heating body based on temperature information measured by the radiation thermometer. Transporting a plurality of substrates into a reaction tube;
Conveying a plurality of induction heating bodies into the reaction tube;
Heat-treating the plurality of substrates by induction heating the plurality of induction heating bodies in the reaction tube using an induction heating body provided outside the reaction tube;
Condensing light from the plurality of induction heating bodies simultaneously;
Measuring the temperature of the plurality of induction heating bodies based on the light from the plurality of induction heating bodies condensed simultaneously. Transporting a plurality of substrates into a reaction tube;
Conveying a plurality of induction heating bodies into the reaction tube;
Heating the plurality of substrates by inductively heating a plurality of induction heating bodies in the reaction tube using an induction heating body provided outside the reaction tube;
Condensing light from the plurality of induction-heated bodies that have been induction-heated simultaneously;
Measuring the temperature of the plurality of induction heating bodies based on the light from the plurality of induction heating bodies condensed at the same time;
And heating the induction heating body based on the measured temperature information.

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