JP2012044029A - Thermoelectric conversion device and method of manufacturing the same - Google Patents
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Abstract
Description
本発明は熱電変換装置およびその製造方法に関する。 The present invention relates to a thermoelectric conversion device and a manufacturing method thereof.
ゼーベック効果を利用した熱電変換素子を用いて温度差を電気に変換する熱電変換装置が実用化されている。とくに、薄膜熱電変換材料を用いる薄膜熱電変換素子は、高い変換効率と製造の容易性とが期待され、開発が進められている。 Thermoelectric conversion devices that convert a temperature difference into electricity using a thermoelectric conversion element utilizing the Seebeck effect have been put into practical use. In particular, thin film thermoelectric conversion elements using thin film thermoelectric conversion materials are expected to have high conversion efficiency and easy manufacture, and are being developed.
このような薄膜熱電変換素子は絶縁シート上面に薄膜として形成される。熱電変換装置は、その薄膜熱電変換素子を上下から2枚の絶縁シートで挟み,全体としてシート状の外形を有するように形成される。かかるシート状の熱電変換装置では、シート形状の装置の上下面を異なる温度の熱源に接触させる。従って、温度差はシート状の装置の厚さ方向に発生し、絶縁シートの面内の温度分布は小さい。このため、熱電変換素子の両端には小さな温度差しか発生せず、薄膜熱電変換装置の熱電変換効率は制限されていた。 Such a thin film thermoelectric conversion element is formed as a thin film on the upper surface of the insulating sheet. The thermoelectric conversion device is formed so that the thin film thermoelectric conversion element is sandwiched between two insulating sheets from above and below and has a sheet-like outer shape as a whole. In such a sheet-shaped thermoelectric conversion device, the upper and lower surfaces of the sheet-shaped device are brought into contact with heat sources having different temperatures. Therefore, the temperature difference occurs in the thickness direction of the sheet-like device, and the temperature distribution in the surface of the insulating sheet is small. For this reason, only a small temperature difference is generated at both ends of the thermoelectric conversion element, and the thermoelectric conversion efficiency of the thin film thermoelectric conversion device is limited.
薄膜熱電変換素子を用いたシート状の熱電変換装置の上下面間(厚さ方向)の温度差を、シート面内の温度差に変換することで、熱電変換効率を向上する熱電変換装置が知られている。 A thermoelectric conversion device that improves the thermoelectric conversion efficiency by converting the temperature difference between the upper and lower surfaces (thickness direction) of the sheet-like thermoelectric conversion device using thin-film thermoelectric conversion elements into the temperature difference within the sheet surface is known. It has been.
この熱電変換装置では、断熱性の下側シート上面に、p型及びn型の薄膜熱電変換素子が互いの端面を接触させてpn接合を形成し、その上に貼着された断熱性の上側シートで被覆する。そして、p型の薄膜熱電変換素子の上方に上側シートに埋め込まれた高熱伝導率材料からなる部材が設けられ、n型の薄膜熱電変換素子の下方に下側シートに埋め込まれた高熱伝導率材料からなる部材が設けられる。 In this thermoelectric conversion device, the p-type and n-type thin film thermoelectric conversion elements are brought into contact with each other on the upper surface of the heat-insulating lower sheet to form a pn junction, and the heat-insulating upper side adhered thereon. Cover with sheet. A member made of a high thermal conductivity material embedded in the upper sheet above the p-type thin film thermoelectric conversion element is provided, and a high thermal conductivity material embedded in the lower sheet below the n-type thin film thermoelectric conversion element The member which consists of is provided.
このシート状の熱電変換装置では、その上下面間を流れる熱流は、主に断熱性のシートの面内の異なる領域に埋め込まれた2個の高熱伝導率材料からなる部材と薄膜熱電変換素子とを経て流れる。従って、薄膜熱電変換素子の両端に温度差を発生させることができる。しかし、高熱伝導率材料からなる部材と薄膜熱電変換素子との間には熱伝導率の低いシート材料の層が介在しており、このシート材料の層内で温度差を生ずるため薄膜熱電変換素子の両端の温度差が小さくなり熱電変換効率の向上が制限される。 In this sheet-like thermoelectric conversion device, the heat flow flowing between the upper and lower surfaces of the sheet-like thermoelectric conversion device is mainly composed of two high thermal conductivity material members embedded in different regions in the surface of the heat insulating sheet, and the thin film thermoelectric conversion element. It flows through. Therefore, a temperature difference can be generated at both ends of the thin film thermoelectric conversion element. However, a sheet material layer having a low thermal conductivity is interposed between the member made of the high thermal conductivity material and the thin film thermoelectric conversion element, and a temperature difference is generated in the sheet material layer, so that the thin film thermoelectric conversion element The temperature difference between the both ends of the substrate becomes small, and improvement in thermoelectric conversion efficiency is limited.
さらに、薄膜熱電変換素子を上下から断熱性のシートで挟み、薄膜熱電変換素子の一端に近い領域(薄膜熱電変換素子の一部をなし,薄膜熱電変換素子の一端近傍の領域)の直下の下側シートに、下側シートを貫通し薄膜熱電変換素子の一端に近い領域に接する高熱伝導率材料からなる部材を設け、薄膜熱電変換素子の他端側に近い領域(薄膜熱電変換素子の一部をなし、薄膜熱電変換素子の他の一端近傍の領域の直上の上側シートに、上側シートを貫通し薄膜熱電変換素子の他端側領域に接する高熱伝導率材料からなる部材を設けた改良された熱電変換装置が知られている。 Furthermore, the thin film thermoelectric conversion element is sandwiched from above and below by a heat insulating sheet, immediately below the area close to one end of the thin film thermoelectric conversion element (part of the thin film thermoelectric conversion element, the area near one end of the thin film thermoelectric conversion element). The side sheet is provided with a member made of a high thermal conductivity material passing through the lower sheet and in contact with a region close to one end of the thin film thermoelectric conversion element, and a region close to the other end side of the thin film thermoelectric conversion element (part of the thin film thermoelectric conversion element) The upper sheet directly above the region near the other end of the thin film thermoelectric conversion element is provided with a member made of a high thermal conductivity material that penetrates the upper sheet and contacts the other end side region of the thin film thermoelectric conversion element. Thermoelectric conversion devices are known.
この改良された熱電変換装置では、高熱伝導率材料からなる部材と薄膜熱電変換素子とは薄い絶縁膜を介して接触しており、熱伝導率の低いシート材料の層が介在しないので、薄膜熱電変換素子の両端にほぼ熱電変換装置の上下面の温度差に近い温度差を生じさせることができる。このため、高い熱電変換効率が実現される。 In this improved thermoelectric conversion device, the member made of a high thermal conductivity material and the thin film thermoelectric conversion element are in contact with each other through a thin insulating film, and there is no sheet material layer having a low thermal conductivity. A temperature difference close to the temperature difference between the upper and lower surfaces of the thermoelectric conversion device can be generated at both ends of the conversion element. For this reason, high thermoelectric conversion efficiency is realized.
上述したように、p型及びn型の薄膜熱電変換素子を突き当てて形成し、その上下を断熱性のシートで挟持し、p型の薄膜熱電変換素子の上方の上側シートに高熱伝導率材料からなる部材を、n型の薄膜熱電変換素子の下方の下側シート高熱伝導率材料からなる部材を埋め込んだ従来の熱電変換装置では、薄膜熱電変換素子と高熱伝導率材料からなる部材との間に低熱伝導率のシート材料が介在する。このため、この介在する低熱伝導率のシート材料内での温度差が大きく、薄膜熱電変換素子の両端の温度差が減少するため、熱電変換効率が低いという問題がある。 As described above, the p-type and n-type thin film thermoelectric conversion elements are abutted and formed, and the upper and lower sides thereof are sandwiched between heat-insulating sheets, and the high thermal conductivity material is placed on the upper sheet above the p-type thin film thermoelectric conversion elements. In a conventional thermoelectric conversion device in which a member made of a lower sheet high thermal conductivity material below an n-type thin film thermoelectric conversion element is embedded, a thin film thermoelectric conversion element and a member made of a high thermal conductivity material A sheet material having a low thermal conductivity is interposed between the two. For this reason, there is a problem that the temperature difference in the intervening low thermal conductivity sheet material is large and the temperature difference between both ends of the thin film thermoelectric conversion element is reduced, so that the thermoelectric conversion efficiency is low.
また、薄膜熱電変換素子を上下から断熱性のシートで挟み、薄膜熱電変換素子の一端側に近い領域の下面に接し下側シートを貫通する高熱伝導率材料からなる部材を設け、薄膜熱電変換素子の他端側に近い領域の上面に接し上側シートを貫通する高熱伝導率材料からなる部材を設けた改良された従来の熱電変換装置がある。この装置では、熱流は、シート上面及び下面からそれぞれ上側シート及び下側シートを貫通する高熱伝導率材料からなる部材を介して、この部材の下面又は上面に絶縁膜を介して対向する薄膜熱電変換素子に流れる。即ち、熱電変換素への伝熱は、熱電変換素子の上面又は下面からなされる。 In addition, the thin film thermoelectric conversion element is provided with a member made of a high thermal conductivity material that is sandwiched between upper and lower thermal insulating sheets and is in contact with the lower surface of a region near one end of the thin film thermoelectric conversion element and penetrates the lower sheet. There is an improved conventional thermoelectric conversion device provided with a member made of a high thermal conductivity material that is in contact with the upper surface of a region close to the other end side and penetrates the upper sheet. In this apparatus, the heat flow passes through a member made of a high thermal conductivity material penetrating the upper sheet and the lower sheet from the upper surface and the lower surface of the sheet, respectively, and the thin film thermoelectric conversion is opposed to the lower surface or the upper surface of this member via an insulating film. It flows to the element. That is, heat transfer to the thermoelectric conversion element is performed from the upper surface or the lower surface of the thermoelectric conversion element.
しかし、熱電変換素子の熱伝導率は高熱伝導率材料からなる部材と比べて著しく低いので、熱電変換素子の上面又は下面から伝熱したのでは、熱電変換素子が厚いと上下方向(膜厚方向)に大きな温度差が生ずる。このため、厚い熱電変換素子を用いた場合、高熱伝導率材料からなる部材から厚さ方向に離れて位置する熱電変換材料の両端の温度差が小さくなり、熱電変換効率が低下するという問題がある。 However, since the thermal conductivity of the thermoelectric conversion element is significantly lower than that of a member made of a high thermal conductivity material, if the heat is transferred from the upper or lower surface of the thermoelectric conversion element, if the thermoelectric conversion element is thick, the vertical direction (thickness direction) ) Has a large temperature difference. For this reason, when a thick thermoelectric conversion element is used, there is a problem that the temperature difference between both ends of the thermoelectric conversion material located away from the member made of the high thermal conductivity material in the thickness direction becomes small, and the thermoelectric conversion efficiency decreases. .
この問題は、熱電変換装置の熱電変換効率を上げるため薄膜熱電変換材料を多層に形成した場合に、熱電変換効率の向上を阻害する大きな障害となる。多層薄膜を用いる熱電変換素子では、多層に形成された薄膜熱電変換材料の実効熱伝導率を低く保持するために、多層間に設ける層間絶縁膜を低熱伝導率材料により構成する。このように層間絶縁膜の熱伝導率を低くすると、熱電変換素子の上下方向の熱伝導が小さくなり、熱電変換素子の上下方向に大きな温度差を生ずる。このため、熱電変換素子の両端に印加される実効的な温度差が小さくなり、熱電変換効率が低下する。 This problem becomes a major obstacle to improving the thermoelectric conversion efficiency when thin film thermoelectric conversion materials are formed in multiple layers in order to increase the thermoelectric conversion efficiency of the thermoelectric conversion device. In a thermoelectric conversion element using a multilayer thin film, in order to keep the effective thermal conductivity of a thin film thermoelectric conversion material formed in a multilayer, an interlayer insulating film provided between the multilayers is made of a low thermal conductivity material. When the thermal conductivity of the interlayer insulating film is lowered in this way, the heat conduction in the vertical direction of the thermoelectric conversion element is reduced, and a large temperature difference is generated in the vertical direction of the thermoelectric conversion element. For this reason, the effective temperature difference applied to the both ends of a thermoelectric conversion element becomes small, and thermoelectric conversion efficiency falls.
本発明は、シート形状の熱電変換装置の上下面の温度差を、シート面内の温度差に変換して薄膜熱電変換素子の両端に温度差を生じさせることで発電する熱電変換装置に関し、熱電変換素子の両端に印加される温度差の膜圧方向分布が小さく高い熱電変換効率を有する熱電変換装置を提供することを目的とする。 The present invention relates to a thermoelectric conversion device that generates electricity by converting a temperature difference between the upper and lower surfaces of a sheet-shaped thermoelectric conversion device into a temperature difference within a sheet surface and generating a temperature difference at both ends of a thin film thermoelectric conversion element. An object of the present invention is to provide a thermoelectric conversion device that has a small distribution of temperature differences applied to both ends of a conversion element in the film pressure direction and high thermoelectric conversion efficiency.
上記課題を解決するための本発明は、その一観点によれば、
第1の絶縁シートと、前記第1の絶縁シート上に隙間を介して積層された第2の絶縁シートと、前記第1の絶縁シートを貫通して前記第1の絶縁シートの上面に突出する、前記第1及び第2の絶縁シートより高熱伝導率材料からなる第1の熱伝導部材と、前記第2の絶縁シートを貫通して前記第2の絶縁シートの下面に突出する、前記第1及び第2の絶縁シートより高熱伝導率材料からなる第2の熱伝導部材と、前記第1の熱伝導部材と前記第2の熱伝導部材との間の前記第1のシート上面上に設けられた熱電変換素子と、前記隙間を充填する接着剤と、を有する熱電変換装置として提供される。
According to one aspect of the present invention for solving the above problems,
A first insulating sheet, a second insulating sheet laminated on the first insulating sheet via a gap, and penetrates the first insulating sheet and protrudes from an upper surface of the first insulating sheet. A first heat conducting member made of a material having a higher thermal conductivity than the first and second insulating sheets, and the first insulating member penetrating through the second insulating sheet and projecting from the lower surface of the second insulating sheet. And a second heat conductive member made of a material having a higher thermal conductivity than the second insulating sheet, and the upper surface of the first sheet between the first heat conductive member and the second heat conductive member. Provided as a thermoelectric conversion device having a thermoelectric conversion element and an adhesive filling the gap.
本発明の熱電変換装置では、熱電変換素子の両端が高熱伝導率材料からなる熱伝導部材の側面に近接乃至接している。このため、熱電変換素子の両端の温度は熱伝導部材の表面温度によりほぼ決定される。熱伝導部材は高熱伝導率材料から形成されており、その内部は均一な温度分布が保持されている。従って、熱電変換素子の両端の温度差は上下方向でほぼ同一となり、熱電変換素子の両端での上下方向の温度差の分布に起因する熱電変換効率の低下が回避されるので、熱電変換効率の高い熱電変換装置が実現される。 In the thermoelectric conversion device of the present invention, both ends of the thermoelectric conversion element are close to or in contact with the side surface of the heat conducting member made of a high thermal conductivity material. For this reason, the temperature at both ends of the thermoelectric conversion element is substantially determined by the surface temperature of the heat conducting member. The heat conducting member is made of a high heat conductivity material, and a uniform temperature distribution is maintained inside. Therefore, the temperature difference between both ends of the thermoelectric conversion element is almost the same in the vertical direction, and the decrease in thermoelectric conversion efficiency due to the distribution of the temperature difference in the vertical direction at both ends of the thermoelectric conversion element is avoided. A high thermoelectric conversion device is realized.
本発明の第1実施形態は、第1の絶縁シート上面に形成された柱体状のヘッド部を有する熱伝導部材を備えた熱電変換装置100に関する。 1st Embodiment of this invention is related with the thermoelectric conversion apparatus 100 provided with the heat conductive member which has the column-shaped head part formed in the 1st insulating sheet upper surface.
図1は本発明の第1実施形態の熱電変換装置平面図であり、第1の絶縁シート1の上面1aに形成された熱電変換素子5、配線11、及び、第1及び第2の熱伝導部材3、4の一部をなす第1及び第2のヘッド部3a、4aの平面配置を表している。図2は本発明の第1実施形態の熱電変換装置断面図であり、図1中のAA’に沿う熱電変換装置100の断面を表している。図3は本発明の第1実施形態の熱電変換装置斜視図である。なお、図3では、理解を容易にするために第2の絶縁シート2を透明に描いている。 FIG. 1 is a plan view of a thermoelectric conversion device according to a first embodiment of the present invention, in which a thermoelectric conversion element 5, a wiring 11, and first and second heat conductions formed on an upper surface 1a of a first insulating sheet 1 are illustrated. The plane arrangement of the 1st and 2nd head parts 3a and 4a which make a part of member 3 and 4 is represented. FIG. 2 is a cross-sectional view of the thermoelectric conversion device according to the first embodiment of the present invention, and shows a cross section of the thermoelectric conversion device 100 along AA ′ in FIG. 1. FIG. 3 is a perspective view of the thermoelectric conversion device according to the first embodiment of the present invention. In FIG. 3, the second insulating sheet 2 is drawn transparent for easy understanding.
図1〜図3を参照して、本発明の第1実施形態に係る熱電変換装置100は、第1の絶縁シート1と、その上面1a上に接着剤6が充填された隙間9を介して積層された第2の絶縁シート2とを有する。 With reference to FIGS. 1-3, the thermoelectric conversion apparatus 100 which concerns on 1st Embodiment of this invention is through the 1st insulating sheet 1 and the clearance gap 9 with which the adhesive agent 6 was filled on the upper surface 1a. It has the 2nd insulating sheet 2 laminated | stacked.
第1及び第2の絶縁シート1、2として、絶縁性及び断熱性に優れた材料からなるシート、例えばポリイミド又はポリエステル樹脂のシートを用いることが好ましい。これらの樹脂からなる絶縁シート1、2は柔軟性に優れるため、フレキシブルなシート状の熱電変換装置100を製造することができる。もちろん、柔軟性が不要ならば、剛性の高い材料を用いることもできる。 As the first and second insulating sheets 1 and 2, it is preferable to use a sheet made of a material having excellent insulating properties and heat insulating properties, for example, a sheet of polyimide or polyester resin. Since the insulating sheets 1 and 2 made of these resins are excellent in flexibility, the flexible sheet-like thermoelectric conversion device 100 can be manufactured. Of course, if flexibility is not required, a material having high rigidity can be used.
本第1実施形態では、第1及び第2の絶縁シート1、2として、厚さ50μmのポリイミド又はポリエステル樹脂シートを用いた。絶縁シート1、2の厚さは、熱電変換装置100の上下面の間、即ち、第2の絶縁シート2の上面2aと第1の絶縁シート1の下面1bとの間に発電のために温度差が印加されたとき、その上下面間を第1及び第2の絶縁シート1、2内の熱伝導により漏洩する熱量に起因する熱電変換効率の低下が、実用上許容される程度に小さくなる厚さに設計される。 In the first embodiment, a polyimide or polyester resin sheet having a thickness of 50 μm is used as the first and second insulating sheets 1 and 2. The thickness of the insulating sheets 1 and 2 is the temperature between the upper and lower surfaces of the thermoelectric converter 100, that is, between the upper surface 2 a of the second insulating sheet 2 and the lower surface 1 b of the first insulating sheet 1 for power generation. When a difference is applied, a decrease in thermoelectric conversion efficiency due to the amount of heat leaking between the upper and lower surfaces due to heat conduction in the first and second insulating sheets 1 and 2 is reduced to an extent that is practically acceptable. Designed to thickness.
第1の絶縁シート1の上面1aに、高熱伝導率材料、例えば銅からなるヘッド部3a、4aが行列状(即ち格子状に)に設けられている。このヘッド部4a、3aは柱体状、例えば高さ8μm、縦横の幅が60μmの正方形の水平断面を有する4角柱状に形成され、その上面及び側面は熱伝導率の高い絶縁膜7、例えば厚さ1μmのシリコン酸化膜で被覆されている。また、この絶縁膜7は、第1の絶縁シート1の上面1aをも被覆するように形成することが好ましい、このように第1の絶縁シート1の上面1aをシリコン酸化膜からなる絶縁膜7で被覆することで、その上に形成される熱電変換素子5の特性劣化が抑制される。なお、この絶縁膜7は、熱電変換素子5とヘッド部4a、3aとの間を熱的に接続しかつ電気的に絶縁するためのもので、ヘッド部4a、3aが絶縁材料から形成されるときは設けなくてもよい。また、熱電変換素子5の経年変化に起因する特性劣化が問題にならない場合は、熱伝導率の高い絶縁膜7を絶縁シート1上面1aに形成しない。こうすることで、絶縁膜7を介して流れる漏洩熱流を小さくすることができる。 On the upper surface 1a of the first insulating sheet 1, head portions 3a, 4a made of a high thermal conductivity material, for example, copper, are provided in a matrix (that is, in a lattice shape). The head portions 4a and 3a are formed in a columnar shape, for example, a quadrangular columnar shape having a square horizontal cross section with a height and width of 60 μm, and the upper surface and side surfaces of the head portions 4a and 3a are insulating films 7 having a high thermal conductivity, for example, It is covered with a silicon oxide film having a thickness of 1 μm. The insulating film 7 is preferably formed so as to also cover the upper surface 1a of the first insulating sheet 1. In this way, the upper surface 1a of the first insulating sheet 1 is formed of a silicon oxide film. By covering with, the characteristic deterioration of the thermoelectric conversion element 5 formed on it is suppressed. The insulating film 7 is for thermally connecting and electrically insulating the thermoelectric conversion element 5 and the head portions 4a and 3a, and the head portions 4a and 3a are formed of an insulating material. Sometimes it is not necessary. Moreover, when the characteristic deterioration resulting from the secular change of the thermoelectric conversion element 5 does not become a problem, the insulating film 7 with high heat conductivity is not formed in the insulating sheet 1 upper surface 1a. By doing so, the leakage heat flow that flows through the insulating film 7 can be reduced.
これらの第1及び第2のヘッド部3a、4aは、互いに2次元格子の面心位置を占めるように互い違いに配列される。即ち、第1のヘッド部3aが2次元面心格子を形成するように配置され、同様に第2のヘッド部4aも他の2次元面心格子を形成するように配置される。そして、第1及び第2のヘッド部3a、4aがそれぞれ形成する2つの2次元面心格子が、互いに縦及び横方向に1/2格子ずれて配置され、その結果、第1のヘッド部3aと第2のヘッド部4aはそれぞれ互いの面心格子の面心位置に配置される。言い換えれば、第1のヘッド部3aの縦横に隣接して第2のヘッド部4aが配置され、第2のヘッド部4aの縦横に隣接して第1のヘッド部3aが配置される。さらに繰り返すと、行方向及び列方向に沿って、第1のヘッド部3a及び第2のヘッド部4aが交互に配置される。なお、第1及び第2のヘッド部3a、4aは、列方向(図1の紙面内上下方向)に互いに60μmの間隔を設けて配置され(即ち120μmピッチで配置され)、行方向(図1の紙面内左右向)には互いに160μmの間隔を設けて配置され(即ち220μmピッチで配置され)る。 The first and second head portions 3a and 4a are alternately arranged so as to occupy the face center positions of the two-dimensional lattice. That is, the first head portion 3a is arranged so as to form a two-dimensional face-centered lattice, and similarly, the second head portion 4a is also arranged so as to form another two-dimensional face-centered lattice. Then, the two two-dimensional face-centered lattices formed by the first and second head portions 3a and 4a are arranged so as to be shifted by 1/2 lattice in the vertical and horizontal directions, and as a result, the first head portion 3a. And the second head portion 4a are respectively arranged at the face center positions of the face center lattice. In other words, the second head portion 4a is disposed adjacent to the first head portion 3a in the vertical and horizontal directions, and the first head portion 3a is disposed adjacent to the vertical and horizontal directions of the second head portion 4a. When it repeats further, the 1st head part 3a and the 2nd head part 4a are alternately arrange | positioned along a row direction and a column direction. Note that the first and second head portions 3a and 4a are arranged at intervals of 60 μm in the column direction (vertical direction in the drawing in FIG. 1) (that is, arranged at a pitch of 120 μm), and in the row direction (FIG. 1). Are arranged at intervals of 160 μm (that is, arranged at a pitch of 220 μm).
第1のヘッド部3aの下面には、第1の絶縁シート1を貫通する貫通部3bが設けられる。この貫通部3bは、柱状、例えば直径50μmの円柱をなし、上面がヘッド部3a下面に密接し、下面が第1の絶縁シート1の下面1bに表出する。 A through portion 3b penetrating the first insulating sheet 1 is provided on the lower surface of the first head portion 3a. The penetrating portion 3 b is a columnar shape, for example, a cylinder having a diameter of 50 μm, the upper surface is in close contact with the lower surface of the head portion 3 a, and the lower surface is exposed on the lower surface 1 b of the first insulating sheet 1.
また、第2のヘッド部4aの上面には、第2の絶縁シート2を貫通する貫通部4bが設けられる。この貫通部4bは、柱状、例えば直径50μmの円柱をなし、下面がヘッド部3a上面に密接し、上面が第1の絶縁シート1の上面2aに表出する。 In addition, a penetrating portion 4b penetrating the second insulating sheet 2 is provided on the upper surface of the second head portion 4a. The penetrating portion 4b is columnar, for example, a cylinder having a diameter of 50 μm, the lower surface is in close contact with the upper surface of the head portion 3a, and the upper surface is exposed on the upper surface 2a of the first insulating sheet 1.
この第1のヘッド部3a及びこれに接する貫通部3bは第1の熱伝導部材3を構成し、第2のヘッド部4a及びこれに接する貫通部4bは第2の熱伝導部材4を構成する。これら第1及び第2の熱伝導部材3、4を構成するヘッド部3a、4a及び貫通部3b、4bは、第1及び第2の絶縁シート1、2より高い熱伝導率を有する高熱伝導率材料、例えば銅又はアルミニウム等の金属,はんだ、高熱伝導率を有する導電性ペースト、或いはセラミックス材料を用いて形成される。従って、第1及び第2の熱伝導部材3、4は、その周囲を埋め込む第1及び第2の絶縁シート1、2材料より高い熱伝導率を有する。このため、下面1bと隙間9との間、及び、上面2aと隙間9との間の熱伝達は主としてこの第1及び第2の熱伝導部材3内の熱伝導を通してなされる。 The first head portion 3a and the penetrating portion 3b in contact with the first head portion 3a constitute the first heat conducting member 3, and the second head portion 4a and the penetrating portion 4b in contact with the first head portion 3a constitute the second heat conducting member 4. . The head portions 3a and 4a and the penetrating portions 3b and 4b constituting the first and second heat conducting members 3 and 4 have a higher thermal conductivity than the first and second insulating sheets 1 and 2. It is formed using a material such as a metal such as copper or aluminum, solder, a conductive paste having high thermal conductivity, or a ceramic material. Therefore, the 1st and 2nd heat conductive members 3 and 4 have higher heat conductivity than the 1st and 2nd insulating sheet 1 and 2 material which embeds the circumference. For this reason, heat transfer between the lower surface 1 b and the gap 9 and between the upper surface 2 a and the gap 9 is mainly performed through heat conduction in the first and second heat conducting members 3.
第1の絶縁シート1の上面1aには、さらに薄膜パターンからなる熱電変換素子5 及び熱電変換素子5 間を接続し、発電した電力を外部へ出力するための配線11が形成されている。 The upper surface 1a of the first insulating sheet 1 is further formed with a thermoelectric conversion element 5 and a thermoelectric conversion element 5 made of a thin film pattern, and wiring 11 for outputting generated electric power to the outside.
熱電変換素子5は、熱電変換材料の薄膜パターンからなり、第1の絶縁シート1の上面1aに絶縁膜7を介して設けられる。この熱電変換素子5は、第1の熱伝導部材3のヘッド部3aと第2の熱伝導部材4のヘッド部4aとの間に設けられ、ヘッド部3aの側面に絶縁膜7を介して一端が接し、ヘッド部4aの側面に他端が接するように形成される。 The thermoelectric conversion element 5 is formed of a thin film pattern of a thermoelectric conversion material, and is provided on the upper surface 1 a of the first insulating sheet 1 via the insulating film 7. The thermoelectric conversion element 5 is provided between the head portion 3 a of the first heat conducting member 3 and the head portion 4 a of the second heat conducting member 4, and has one end on the side surface of the head portion 3 a via the insulating film 7. Is formed so that the other end contacts the side surface of the head portion 4a.
かかる熱電変換素子5は、行列状に配置されたヘッド部3a、4aの列方向(図1の紙面上下方向)に交互に並ぶヘッド部3a、4aの間に設けることができる。このとき、熱電変換素子5をp型及びn型の薄膜熱電変換材料から形成し、p型及びn型の熱電変換素子5p、5nが列方向に交互に並ぶように配置することが好ましい。このように配置することで、詳しくは次に説明するように、隣接する熱電変換素子5間を配線11で接続するだけで、容易に全ての熱電変換素子5を直列に接続することができる。 The thermoelectric conversion element 5 can be provided between the head portions 3a and 4a that are alternately arranged in the column direction (vertical direction in the drawing of FIG. 1) of the head portions 3a and 4a arranged in a matrix. At this time, it is preferable that the thermoelectric conversion elements 5 are formed of p-type and n-type thin film thermoelectric conversion materials, and the p-type and n-type thermoelectric conversion elements 5p, 5n are arranged alternately in the column direction. By arranging in this way, as will be described in detail below, all the thermoelectric conversion elements 5 can be easily connected in series simply by connecting the adjacent thermoelectric conversion elements 5 with the wiring 11.
列方向に交互に並ぶように列設されたp型の熱電変換素子5pとn型の熱電変換素子5nは、配線11(配線11a〜11c)により直列に接続される。配線11aは、絶縁膜7上から、列方向に隣接する熱電変換素子5p、5nの対向する端部の上面に延在し、その隣接する熱電変換素子5p、5nを電気的に直列に接続する。さらに、配線11bは、列の一端に位置する熱電変換素子5と隣接する列のその一端側に位置する熱電変換素子5との間を電気的に接続する。この配線11bは、列ごとに直列接続された熱電変換素子5を、さらに他の列に直列に接続するように、両隣のうちの一方の側の列の熱電変換素子5を列の一端側で接続し、両隣の他方の側の熱電変換素子5を列の他端側で接続する。従って、配線11は、行列状に配置された全ての熱電変換素子5を、つづら折り状の経路で直列接続する。 The p-type thermoelectric conversion elements 5p and the n-type thermoelectric conversion elements 5n arranged so as to be alternately arranged in the column direction are connected in series by wirings 11 (wirings 11a to 11c). The wiring 11a extends from above the insulating film 7 to the upper surface of the opposite end of the thermoelectric conversion elements 5p, 5n adjacent in the column direction, and electrically connects the adjacent thermoelectric conversion elements 5p, 5n in series. . Furthermore, the wiring 11b electrically connects between the thermoelectric conversion element 5 located at one end of the row and the thermoelectric conversion element 5 located on the one end side of the adjacent row. The wiring 11b connects the thermoelectric conversion elements 5 in one of the adjacent columns on one end side of the column so that the thermoelectric conversion elements 5 connected in series for each column are further connected in series to another column. The thermoelectric conversion elements 5 on the other side on both sides are connected on the other end side of the column. Therefore, the wiring 11 connects all the thermoelectric conversion elements 5 arranged in a matrix in series through a zigzag path.
なお、本第1実施形態では、ヘッド部3a、4bの間に導電型の異なる熱電変換素子5p、5nを交互に配置した。この配置では、例えば第1の熱伝導部材3のヘッド部3aに、列方向に沿って一方(図1の紙面上方)からp型の熱電変換素子5aが、他方(図1の紙面下方)からn型の熱電変換素子5nがヘッド部3aを挟むように当接する。この熱電変換素子5p、5nの他端は第2の熱伝導部材4のヘッド部4aに接するので、第1及び第2の熱伝導部材3、4の間に印加された温度差に基づき、同じ列の熱電変換素子5p、5nには同じ向きの起電力が発生する。従って、これらの熱電変換素子5p、5nを直列に接続することで、熱電変換素子5p、5nの個数倍の電圧が出力される。このように、熱電変換素子5p、5nの出力は、配線11により直列に接続され、配線11の両端に設けられた電極パッド11cから外部に出力される。 In the first embodiment, the thermoelectric conversion elements 5p and 5n having different conductivity types are alternately arranged between the head portions 3a and 4b. In this arrangement, for example, the p-type thermoelectric conversion element 5a is arranged from one side (above the paper surface in FIG. 1) to the head portion 3a of the first heat conducting member 3 from the other side (below the paper surface in FIG. 1) along the column direction. The n-type thermoelectric conversion element 5n abuts so as to sandwich the head portion 3a. Since the other ends of the thermoelectric conversion elements 5p and 5n are in contact with the head portion 4a of the second heat conducting member 4, based on the temperature difference applied between the first and second heat conducting members 3 and 4, the same The electromotive force in the same direction is generated in the thermoelectric conversion elements 5p and 5n in the row. Therefore, by connecting these thermoelectric conversion elements 5p and 5n in series, a voltage that is several times the number of thermoelectric conversion elements 5p and 5n is output. As described above, the outputs of the thermoelectric conversion elements 5p and 5n are connected in series by the wiring 11, and are output to the outside from the electrode pads 11c provided at both ends of the wiring 11.
上述した熱電変換素子5の材料は、ゼーベック効果を生ずる熱電変換材料であればよく、薄膜材料の他バルク材料であってもよい。しかし、薄膜材料は製造容易であり、さらに柔軟性に優れる材料を容易に選択できるので、とくに安価にフレキシブル熱電変換装置を製造するに適している。かかる薄膜熱電変換材料として、例えばp型熱電変換材料としてクロメル(Ni90Cr10)、n型熱電変換材料としてコンスタンタン(Ni48Cu52)を用いることができる。また、化合物半導体、例えばBi2 Te2 、CoSb、SiGe又はPbTeを用いることもでき、単体金属、例えばBi、Pt、Au、Cu又はNiを用いてもよい。 The material of the thermoelectric conversion element 5 described above may be a thermoelectric conversion material that produces the Seebeck effect, and may be a bulk material in addition to a thin film material. However, the thin film material is easy to manufacture, and a material having excellent flexibility can be easily selected, so that it is particularly suitable for manufacturing a flexible thermoelectric conversion device at low cost. As such a thin film thermoelectric conversion material, for example, chromel (Ni 90 Cr 10 ) can be used as a p-type thermoelectric conversion material, and constantan (Ni 48 Cu 52 ) can be used as an n-type thermoelectric conversion material. A compound semiconductor such as Bi 2 Te 2 , CoSb, SiGe, or PbTe can also be used, and a single metal such as Bi, Pt, Au, Cu, or Ni may be used.
第1及び第2の絶縁シート1、2の隙間9は、ヘッド部3a、3b及び熱電変換素子5がその隙間9に挟持される間隔があればとくに制限はなく、例えば8μmとする。また、ヘッド部3a、3bの上面が、上方の第2の絶縁シート2の下面2bに埋め込まれても、例えば1μ程度、即ち絶縁膜7の厚さ程度埋め込まれてもよい。隙間9は、接着剤6が充填され、この接着剤6により第1及び第2の絶縁シート1、2が貼着される。この接着剤6は絶縁シート1、2間の熱の漏洩を抑制する観点から熱伝導率が低いことが望ましく、また、素子の電気的絶縁を担保するため絶縁性を有することが好ましい。かかる観点から、例えば熱硬化性樹脂からなる接着剤6を用いることが好ましい。 The gap 9 between the first and second insulating sheets 1 and 2 is not particularly limited as long as there is an interval in which the head portions 3a and 3b and the thermoelectric conversion element 5 are sandwiched by the gap 9, and is set to 8 μm, for example. Further, the upper surfaces of the head portions 3 a and 3 b may be embedded in the lower surface 2 b of the upper second insulating sheet 2, or may be embedded, for example, about 1 μm, that is, about the thickness of the insulating film 7. The gap 9 is filled with an adhesive 6, and the first and second insulating sheets 1 and 2 are attached by the adhesive 6. The adhesive 6 desirably has low thermal conductivity from the viewpoint of suppressing heat leakage between the insulating sheets 1 and 2 and preferably has insulating properties to ensure electrical insulation of the element. From this viewpoint, it is preferable to use, for example, an adhesive 6 made of a thermosetting resin.
次に、上述した本発明の第1実施形態の熱電変換装置100の製造方法を説明する。 Next, the manufacturing method of the thermoelectric conversion apparatus 100 of 1st Embodiment of this invention mentioned above is demonstrated.
図4は本発明の第1実施形態の熱電変換装置の製造工程断面図(その1)、図5は本発明の第1実施形態の熱電変換装置の製造工程断面図(その2)であり、製造途中の熱電変換装置100の断面を表している。なお、図4(a)〜(c)、(d)及び図5(f)〜(j)は図1中のAA’断面を、図4(c−B)、(d−B)〜(e−B)は図1中のBB’断面を表している。 FIG. 4 is a manufacturing process sectional view (No. 1) of the thermoelectric conversion device of the first embodiment of the present invention, FIG. 5 is a manufacturing process sectional view (No. 2) of the thermoelectric conversion device of the first embodiment of the present invention, The cross section of the thermoelectric conversion apparatus 100 in the middle of manufacture is represented. 4 (a) to (c), (d) and FIGS. 5 (f) to (j) are cross-sectional views taken along line AA 'in FIG. 1, and FIGS. 4 (cB) and 4 (dB) to (d). e-B) represents the BB 'cross section in FIG.
図4(a)を参照して、まず、上面1aに厚さ8μmの銅層1dが積層された、厚さ50μmのポリエステル樹脂からなる第1の絶縁シート1を準備する。次いで、第1の絶縁シート1の下面から第1の絶縁シート1を貫通し、銅層1dの下面を表出する、例えば直径50μmの円柱状の穴cを開口する。この穴1cは、図1及び図2を参照して、第1の熱伝導部材3の貫通部3bの位置、即ち、行方向に440μm、列方向に240μmの格子間隔を有する面心格子の格子点に形成される。かかる穴1cは、例えばレーザ加工によりなされる。他に、エッチングにより形成することもできる。 Referring to FIG. 4A, first, a first insulating sheet 1 made of a polyester resin having a thickness of 50 μm, in which a copper layer 1d having a thickness of 8 μm is laminated on the upper surface 1a, is prepared. Next, a cylindrical hole c having a diameter of, for example, 50 μm is opened to penetrate the first insulating sheet 1 from the lower surface of the first insulating sheet 1 and expose the lower surface of the copper layer 1d. 1 and 2, the hole 1c is a lattice of a face-centered lattice having a lattice spacing of 440 μm in the row direction and 240 μm in the column direction, that is, the position of the through portion 3b of the first heat conducting member 3. Formed at a point. The hole 1c is made by, for example, laser processing. Alternatively, it can be formed by etching.
次いで、図4(b)を参照して、無電解銅めっき法を用いて、穴1cを埋め込む銅からなる貫通部3bを形成する。このとき、無電解めっき銅を穴1cの表面を被覆するように形成し、その後、穴1cの残りの部分に他の方法で形成された高熱伝導率材料、例えば高熱伝導率のペースト、導電性ペースト、電解めっき銅或いははんだを埋め込むことで形成してもよい。次いで、後工程での下面1bの損傷を防ぐために、下面1bに樹脂からなる保護シート1eを貼着する。 Next, with reference to FIG. 4B, a through portion 3b made of copper for embedding the hole 1c is formed by using an electroless copper plating method. At this time, the electroless plated copper is formed so as to cover the surface of the hole 1c, and then the high thermal conductivity material formed by another method on the remaining portion of the hole 1c, for example, a paste with high thermal conductivity, conductivity You may form by embedding a paste, electrolytic plating copper, or solder. Next, in order to prevent damage to the lower surface 1b in a subsequent process, a protective sheet 1e made of resin is attached to the lower surface 1b.
次いで、図4(c)を参照して、ホトエッチング法を用いて銅層1dをパターニングし、第1の絶縁シート上面1aに、例えば辺長60μmの正方形の銅パターンからなるヘッド部3a、3bを形成する。このうち、第1のヘッド部3aは、第1の絶縁シート1に形成された穴1cの直上に、穴1cを塞ぐように設けられる。この第1のヘッド部3aは、その直下に接して形成された貫通部3bと共に第1の熱伝導部材3を構成する。一方、第2のヘッド部4aは、第1のヘッド部3aが形成する面心格子の面心位置、即ち行及び列方向にそれぞれ最近接位置に位置する4個の穴1cの中心(4個の穴1cが形成する菱形の対角線の交点)に位置するように形成される。 Next, referring to FIG. 4C, the copper layer 1d is patterned using a photo-etching method, and the head portions 3a and 3b made of a square copper pattern having a side length of 60 μm, for example, are formed on the first insulating sheet upper surface 1a. Form. Among these, the 1st head part 3a is provided immediately above the hole 1c formed in the 1st insulating sheet 1 so that the hole 1c may be plugged up. The first head portion 3a constitutes the first heat conducting member 3 together with the through portion 3b formed in contact therewith. On the other hand, the second head portion 4a has the center of the four holes 1c located at the closest positions in the row and column directions of the face-centered lattice formed by the first head portion 3a (four Are formed so as to be located at the intersection of diagonal lines of the rhombus formed by the hole 1c.
次いで、第1の絶縁シート1の上面1a全面に厚さ1μmのシリコン酸化膜をスパッタして、シリコン酸化膜からなる絶縁膜7を形成する。この絶縁膜7は、ヘッド部3a、3bの上面及び側面及びヘッド部3a、3bの外側に表出する第1の絶縁シート1の上面1aを被覆するように形成される。 Next, a silicon oxide film having a thickness of 1 μm is sputtered on the entire upper surface 1 a of the first insulating sheet 1 to form an insulating film 7 made of a silicon oxide film. The insulating film 7 is formed so as to cover the upper surface and side surfaces of the head portions 3a and 3b and the upper surface 1a of the first insulating sheet 1 exposed on the outside of the head portions 3a and 3b.
図4(c−B)を参照して、絶縁膜7が形成されたとき、第1の絶縁シート1の上面1aは絶縁膜7により、下面1bは保護シート1eにより被覆され、その絶縁シート1の上面1aに絶縁膜7で被覆されたヘッド部3a、4aが突出する。 4 (c-B), when the insulating film 7 is formed, the upper surface 1a of the first insulating sheet 1 is covered with the insulating film 7, and the lower surface 1b is covered with the protective sheet 1e. The head portions 3a and 4a covered with the insulating film 7 protrude from the upper surface 1a of the head.
次いで、図4(d)を参照して、例えばメタルマスクを用いたスパッタ法により、熱電変換材料を、例えば厚さ1μmの平板状のパターンとして形成し、熱電変換素子5を形成する。この熱電変換素子5は、列及び行方向にそれぞれp型熱電変換素子5pとn型熱電変換素子5nとが交互に位置するように形成される。なお、p型及びn型熱電変換素子5p、5nは、それぞれ別個になされる2回のスパッタリングにより形成される。 Next, referring to FIG. 4D, the thermoelectric conversion material is formed as a flat pattern having a thickness of 1 μm, for example, by sputtering using a metal mask, for example, and the thermoelectric conversion element 5 is formed. The thermoelectric conversion elements 5 are formed such that the p-type thermoelectric conversion elements 5p and the n-type thermoelectric conversion elements 5n are alternately positioned in the column and row directions, respectively. Note that the p-type and n-type thermoelectric conversion elements 5p and 5n are formed by two times of sputtering performed separately.
これらの熱電変換素子5は、図1、及び図4(d−B)を参照して、例えば、中央部分が60μm幅の帯状をなし、両端部分が幅120μmまで拡幅されてヘッド部3a、4aを抱持するような平面パターンに形成される。 1 and 4 (d-B), these thermoelectric conversion elements 5 have, for example, a central portion formed in a strip shape having a width of 60 μm, and both end portions are widened to a width of 120 μm, and the head portions 3a, 4a. It is formed in a flat pattern that embraces
なお、熱電変換素子5の形成は、スパッタに限られず、熱電変換素子5に必要とされる熱電変換特性を維持しかつその特性を劣化することなくパターニング可能であれば、他の方法を用いてもよい。例えば、スパッタに代えて、蒸着法、イオンプレーテング法、スクリーン印刷法又はフラッシュ蒸着法を用いることもできる。これらの薄膜形成方法は、200℃以下の形成温度で優れた特性を有する熱電変換材料を形成することができるので、耐熱性が200℃程度の樹脂シートからなる第1の絶縁シート1の変形を回避することができる。さらに、CVD法、レーザアブレーション法、ゾルゲル法又は溶射法を用いてもよい。 The formation of the thermoelectric conversion element 5 is not limited to sputtering, and other methods can be used as long as the thermoelectric conversion characteristics required for the thermoelectric conversion element 5 can be maintained and patterning can be performed without degrading the characteristics. Also good. For example, instead of sputtering, a vapor deposition method, an ion plating method, a screen printing method, or a flash vapor deposition method can be used. Since these thin film forming methods can form a thermoelectric conversion material having excellent characteristics at a forming temperature of 200 ° C. or lower, deformation of the first insulating sheet 1 made of a resin sheet having a heat resistance of about 200 ° C. It can be avoided. Further, a CVD method, a laser ablation method, a sol-gel method, or a thermal spraying method may be used.
次いで、図4(e−B)を参照して、メタルマスクを用いたスパッタリング法により、導電性金属膜からなる、例えは厚さ0.2μmの銅薄膜パターンからなる配線11を形成する。図1及び図4(e−B)を参照して、配線11aは、列方向に隣接するp型及びn型熱電変換素子5p、5nの端部の上面から熱電変換素子5p、5nの端面を覆い、熱電変換素子5p、5nの間に表出する絶縁膜7上に延在して、この熱電変換素子5p、5nを直列に接続する。また、各列間は、配線11bにより接続され、その結果、配線11a、11bにより全ての熱電変換素子5が直列に接続される。なお、配線11の両端には、外部に電力を出力するための電極パッド11cが設けられている。 Next, referring to FIG. 4E-B, wiring 11 made of a conductive thin film, for example, a 0.2 μm thick copper thin film pattern is formed by sputtering using a metal mask. Referring to FIG. 1 and FIG. 4 (e-B), the wiring 11a extends from the upper surface of the ends of the p-type and n-type thermoelectric conversion elements 5p, 5n adjacent in the column direction to the end faces of the thermoelectric conversion elements 5p, 5n. It covers and extends on the insulating film 7 exposed between the thermoelectric conversion elements 5p and 5n, and the thermoelectric conversion elements 5p and 5n are connected in series. Further, the columns are connected by the wiring 11b, and as a result, all the thermoelectric conversion elements 5 are connected in series by the wirings 11a and 11b. Note that electrode pads 11c for outputting electric power to the outside are provided at both ends of the wiring 11.
次いで、図5(f)を参照して、第1の絶縁シート1の上面1aに、下面2bに熱硬化性の接着剤6が積層された厚さ50μmのポリエステル樹脂からなる第2の絶縁シート2を載置し、次いで、図5(g)を参照して、例えば押圧5MP、温度150℃で2時間圧着し、接着剤6を熱硬化させて積層した。このとき、ヘッド部3a、4bの上面を軟化した第2の絶縁シート2の下面2bに食い込ませ、第1及び第2の絶縁シート3、4の隙間9の間隔を8μmにした。 Next, referring to FIG. 5 (f), a second insulating sheet made of a polyester resin having a thickness of 50 μm in which a thermosetting adhesive 6 is laminated on the lower surface 2 b on the upper surface 1 a of the first insulating sheet 1. Next, referring to FIG. 5G, the adhesive 6 was pressure-bonded for 2 hours at a pressure of 5 MP and a temperature of 150 ° C., and the adhesive 6 was thermoset and laminated. At this time, the upper surfaces of the head portions 3a and 4b were bitten into the lower surface 2b of the softened second insulating sheet 2, and the gap 9 between the first and second insulating sheets 3 and 4 was set to 8 μm.
次いで、図5(h)を参照して、第2のヘッド部4aの直上に、第2の絶縁シート2を貫通する例えば直径50μmの穴2cを開口する。この穴2cは、穴1cと同様の方法、例えばレーザ加工により形成され、第2の絶縁シート2及び絶縁膜7を貫通してその下面にヘッド部4aを表出する。 Next, referring to FIG. 5 (h), a hole 2c having a diameter of 50 μm, for example, that penetrates the second insulating sheet 2 is opened immediately above the second head portion 4a. The hole 2c is formed by the same method as the hole 1c, for example, laser processing, and penetrates the second insulating sheet 2 and the insulating film 7 to expose the head portion 4a on the lower surface thereof.
次いで、図5(i)を参照して、穴2cを穴1cと同様に、高熱伝導率の材料、例えば無電解銅めっきで埋め込み貫通部4bを形成する。この貫通部4bは、貫通部3bと同様の方法で形成することができる。その結果、貫通部4bの下面に第2のヘッド部4aが密接した第2の熱伝導部材4が形成された。 Next, referring to FIG. 5I, the hole 2c is filled with a material having a high thermal conductivity, for example, electroless copper plating, similarly to the hole 1c, to form the through-hole 4b. This penetration part 4b can be formed by the same method as the penetration part 3b. As a result, the second heat conducting member 4 in which the second head portion 4a was in close contact with the lower surface of the through portion 4b was formed.
次いで、図5(j)を参照して、第1の絶縁シート1の下面1bに貼着された保護シート1eを除去して、本発明の第1実施形態の熱電変換装置100が製造される。 Next, referring to FIG. 5 (j), the protective sheet 1 e adhered to the lower surface 1 b of the first insulating sheet 1 is removed, and the thermoelectric conversion device 100 according to the first embodiment of the present invention is manufactured. .
上述した本発明の第1実施形態の熱電変換装置100では、各熱電変換素子5は、熱電変換材料からなる一層の薄膜から構成されていた。しかし、各熱電変換素子5を多層にすることもできる。 In the thermoelectric conversion device 100 according to the first embodiment of the present invention described above, each thermoelectric conversion element 5 is composed of a single thin film made of a thermoelectric conversion material. However, each thermoelectric conversion element 5 can be multi-layered.
図6は本発明の第1実施形態の変形例にかかる熱電変換素子断面図であり、多層の熱電変換材料薄膜から構成された熱電変換素子5の層構造を表している。なお、図6(a)及び図6(b)はそれぞれ、第1実施形態の第1変形例及び第2変形例を表している。 FIG. 6 is a cross-sectional view of a thermoelectric conversion element according to a modification of the first embodiment of the present invention, and shows a layer structure of a thermoelectric conversion element 5 composed of a multilayer thermoelectric conversion material thin film. FIGS. 6A and 6B show a first modification and a second modification of the first embodiment, respectively.
図6(a)を参照して、本第1実施形態の第1変形例では、単層の熱電変換材料薄膜からなる第1実施形態の熱電変換素子5に代えて、熱電変換素子5を複数層の、例えば4層の熱電変換材料薄膜5aにより構成する。各熱電変換材料薄膜5a間は、熱伝導率の低い絶縁材料、例えば樹脂からなる層間絶縁膜8により絶縁されている。 Referring to FIG. 6A, in the first modification of the first embodiment, a plurality of thermoelectric conversion elements 5 are used instead of the thermoelectric conversion elements 5 of the first embodiment made of a single-layer thermoelectric conversion material thin film. For example, the thermoelectric conversion material thin film 5a has four layers. The thermoelectric conversion material thin films 5a are insulated by an insulating material having a low thermal conductivity, for example, an interlayer insulating film 8 made of resin.
これらの熱電変換材料薄膜5a及び層間絶縁膜8は、メタルマスクを用いたスパッタ法又は蒸着法により、熱電変換材料薄膜5aと層間絶縁膜8とを交互に積層して形成することができる。積層した後、この熱電変換材料薄膜5aと層間絶縁膜8からなる多層構造の端面に被着した層間絶縁膜8を除去して、多層構造の端面に熱電変換材料薄膜5aの端面を露出させる。この端面に被着した層間絶縁膜8の除去は、例えば樹脂のアッシング又はエッチングによりなすことができる。また、層間絶縁膜8としてレジストを用い、現像により除去することもできる。 The thermoelectric conversion material thin film 5a and the interlayer insulating film 8 can be formed by alternately laminating the thermoelectric conversion material thin films 5a and the interlayer insulating film 8 by sputtering or vapor deposition using a metal mask. After the lamination, the interlayer insulating film 8 deposited on the end face of the multilayer structure composed of the thermoelectric conversion material thin film 5a and the interlayer insulating film 8 is removed to expose the end face of the thermoelectric conversion material thin film 5a on the end face of the multilayer structure. The removal of the interlayer insulating film 8 deposited on the end face can be performed by, for example, resin ashing or etching. Further, a resist can be used as the interlayer insulating film 8 and can be removed by development.
また、熱電変換材料薄膜5aと層間絶縁膜8との積層を第1の絶縁シート1の上面1a全面に形成した後、ホトエッチングによりパターニングして、端面に熱電変換材料薄膜5aが露出した多層構造の熱電変換素子5を形成してもよい。 A multilayer structure in which the thermoelectric conversion material thin film 5a and the interlayer insulating film 8 are formed on the entire upper surface 1a of the first insulating sheet 1 and then patterned by photoetching to expose the thermoelectric conversion material thin film 5a on the end face. The thermoelectric conversion element 5 may be formed.
多層構造の熱電変換素子5の形成後、第1実施形態と同様に配線11を形成する。この配線11は、熱電変換素子5の上面から多層構造の端面を被覆し、絶縁膜7上へ延在する。従って、配線11は、熱電変換素子5の上面及び多層構造の端面に表出する熱電変換材料薄膜5aの端面と接触して、熱電変換素子5と電気的に接続する。なお、必要ならば、熱電変換素子5の劣化を防止するために、さらにシリコン酸化膜からなる絶縁膜7を第1の絶縁シート1の上面1a全面にに形成する。その後、第1実施形態の図5に示す工程と同様の工程を経て、本発明の第1実施形態の第1変形例にかかる熱電変換素子5が製造される。 After the thermoelectric conversion element 5 having a multilayer structure is formed, the wiring 11 is formed as in the first embodiment. The wiring 11 covers the end face of the multilayer structure from the upper surface of the thermoelectric conversion element 5 and extends onto the insulating film 7. Therefore, the wiring 11 is in contact with the upper surface of the thermoelectric conversion element 5 and the end surface of the thermoelectric conversion material thin film 5 a exposed on the end surface of the multilayer structure, and is electrically connected to the thermoelectric conversion element 5. If necessary, an insulating film 7 made of a silicon oxide film is further formed on the entire upper surface 1a of the first insulating sheet 1 in order to prevent the thermoelectric conversion element 5 from deteriorating. Then, the thermoelectric conversion element 5 concerning the 1st modification of 1st Embodiment of this invention is manufactured through the process similar to the process shown in FIG. 5 of 1st Embodiment.
本発明の第1実施形態の第2変形例にかかる熱電変換素子5は、配線11を熱電変換材料薄膜5aの上面で接触させ、広い接触面積を確保したものである。 The thermoelectric conversion element 5 according to the second modification of the first embodiment of the present invention has a wiring 11 in contact with the upper surface of the thermoelectric conversion material thin film 5a to ensure a wide contact area.
図6(b)を参照して、第1実施形態の第2変形例にかかる熱電変換素子5では、熱電変換材料薄膜5a上に配線11が形成される配線接触領域11Dに、層間絶縁膜8を形成しない。従って、配線接触領域11Dでは、全ての熱電変換材料薄膜5aは直接接して積層される。このため、各熱電変換材料薄膜5aはこの配線接触領域11Dで上下の薄膜が電気的に接続され、さらに配線接触領域11D上に形成された配線11に接続される。このように、熱電変換材料薄膜5a相互間及び熱電変換材料薄膜5aと配線11間の接続は、熱電変換材料薄膜5a端面より広い配線接触領域11Dでなされるから、第1変形例に比べて低い接触抵抗で接続することができる。 With reference to FIG.6 (b), in the thermoelectric conversion element 5 concerning the 2nd modification of 1st Embodiment, the interlayer insulation film 8 is formed in the wiring contact region 11D in which the wiring 11 is formed on the thermoelectric conversion material thin film 5a. Does not form. Therefore, in the wiring contact region 11D, all the thermoelectric conversion material thin films 5a are laminated in direct contact. For this reason, each thermoelectric conversion material thin film 5a is electrically connected to the upper and lower thin films in the wiring contact region 11D, and is further connected to the wiring 11 formed on the wiring contact region 11D. Thus, since the connection between the thermoelectric conversion material thin films 5a and between the thermoelectric conversion material thin film 5a and the wiring 11 is made in the wiring contact region 11D wider than the end face of the thermoelectric conversion material thin film 5a, it is lower than in the first modification. Can be connected with contact resistance.
図6(b)に示した第2変形例は、最下層の熱電変換材料薄膜5aをメタルマスクを用いたスパッタリングにより形成したのち、その上にレジストからなる最下層の層間絶縁膜7を形成し、露光、現像して配線接触領域11Dのレジストを除去する。次いで、下から2層目の熱電変換材料薄膜5aを最下層と同様の方法で形成したのち、下から2層目のレジストを形成し、露光、現像して配線接触領域11Dのレジストを除去する。この工程を繰り返して、4層の熱電変換材料薄膜5aと、その間に介在する3層のレジストからなる層間絶縁膜8を形成した。その後、第1変形例と同様に配線11を形成して、本第1実施形態の第2変形例にかかる熱電変換素子5を用いた熱電変換装置が製造される。 In the second modification shown in FIG. 6B, the lowermost thermoelectric conversion material thin film 5a is formed by sputtering using a metal mask, and then the lowermost interlayer insulating film 7 made of resist is formed thereon. Then, the resist in the wiring contact region 11D is removed by exposure and development. Next, after forming the thermoelectric conversion material thin film 5a of the second layer from the bottom by the same method as that for the lowermost layer, a resist of the second layer from the bottom is formed, exposed and developed to remove the resist in the wiring contact region 11D. . This process was repeated to form a four-layer thermoelectric conversion material thin film 5a and an interlayer insulating film 8 made of a three-layer resist interposed therebetween. Thereafter, the wiring 11 is formed in the same manner as in the first modification, and the thermoelectric conversion device using the thermoelectric conversion element 5 according to the second modification of the first embodiment is manufactured.
なお、上述した第1及び第2変形例では、第1実施形態においてp熱電変換素子5pが形成される位置には、熱電変換材料薄膜の全層がp型からなる熱電変換素子5が形成され、第1実施形態においてn型熱電変換素子5nが形成される位置には、熱電変換材料薄膜の全層がn型からなる熱電変換素子5が形成される。 In the first and second modifications described above, the thermoelectric conversion element 5 in which the entire thermoelectric conversion material thin film is p-type is formed at the position where the p thermoelectric conversion element 5p is formed in the first embodiment. In the first embodiment, the thermoelectric conversion element 5 in which the entire layer of the thermoelectric conversion material thin film is n-type is formed at the position where the n-type thermoelectric conversion element 5n is formed.
図7は本発明の第1実施形態の他の変形例にかかる熱電変換装置断面図であり、熱電変換装置の上下面に高熱伝導率材料からなる熱拡散板12を設けた熱電変換装置101に関する。 FIG. 7 is a cross-sectional view of a thermoelectric conversion device according to another modification of the first embodiment of the present invention, and relates to a thermoelectric conversion device 101 in which thermal diffusion plates 12 made of a high thermal conductivity material are provided on the upper and lower surfaces of the thermoelectric conversion device. .
図7を参照して、本発明の第1実施形態の他の変形例にかかる熱電変換装置101は、第1実施形態の熱電変換装置100の上面2a及び下面1bの全面を被覆する、高熱伝導率材料、例えば銅又はAl等の金属からなる熱拡散板12が設けられる。 Referring to FIG. 7, a thermoelectric conversion device 101 according to another modification of the first embodiment of the present invention covers the entire upper surface 2a and lower surface 1b of the thermoelectric conversion device 100 of the first embodiment. A thermal diffusion plate 12 made of a material such as copper or metal such as Al is provided.
後述するように、熱電変換装置100の上面2aと下面1b間の熱移動は、主に熱伝導部材3、4を介してなされる。従って,熱伝導部材3、4が表出する上下面2a、1bには、熱伝導部材3、4を中心とした温度分布を生ずるおそれがある。このような温度分布が大きくなると、熱伝導部材3、4の表出面と熱源との間に温度差を生じさせ、熱電変換装置100の熱電変換効率を低下させる。本第1実施形態の他の変形例では、上下面2a、1bに設けられた熱拡散板12により上下面2a、1b内に発生する温度分布が緩和されるので、かかる上下面2a、1bの面内温度分布の発生による熱電変換効率の低下が抑制される。 As will be described later, the heat transfer between the upper surface 2 a and the lower surface 1 b of the thermoelectric conversion device 100 is mainly performed through the heat conducting members 3 and 4. Therefore, the upper and lower surfaces 2a and 1b on which the heat conducting members 3 and 4 are exposed may cause a temperature distribution around the heat conducting members 3 and 4. When such a temperature distribution becomes large, a temperature difference is generated between the exposed surfaces of the heat conducting members 3 and 4 and the heat source, and the thermoelectric conversion efficiency of the thermoelectric conversion device 100 is lowered. In another modification of the first embodiment, the temperature distribution generated in the upper and lower surfaces 2a and 1b is relaxed by the heat diffusion plate 12 provided on the upper and lower surfaces 2a and 1b. A decrease in thermoelectric conversion efficiency due to the occurrence of the in-plane temperature distribution is suppressed.
上述した熱電変換装置100、101は、その上下面2a、1bがそれぞれ異なる温度の熱源に接触し、その上下面2a、1bに印加された温度差を熱電変換素子5の両端の温度差に変換することで発電する。以下、その変換効率について説明する。 The above-described thermoelectric conversion devices 100 and 101 have their upper and lower surfaces 2 a and 1 b in contact with heat sources having different temperatures, and convert the temperature difference applied to the upper and lower surfaces 2 a and 1 b into a temperature difference between both ends of the thermoelectric conversion element 5. To generate electricity. Hereinafter, the conversion efficiency will be described.
図2を参照して、例えば、第1の絶縁シート1の下面1bに高温、例えば36℃の熱源を接触させ、第2の絶縁シート2の上面2aに低温、例えば6℃の熱源を接触させた場合について説明する。 Referring to FIG. 2, for example, a heat source at a high temperature, for example, 36 ° C. is brought into contact with the lower surface 1b of the first insulating sheet 1, and a heat source at a low temperature, for example, 6 ° C. is brought into contact with the upper surface 2a of the second insulating sheet 2. The case will be described.
本発明の熱電変換装置では、第1及び第2の絶縁シート1、2は断熱性に優れたポリエステル樹脂であり、上下面2a、1bを熱伝導で厚さ方向に流れる漏洩熱流は十分に抑制される。他方、熱伝導部材1,2は熱伝導率の高い材料、例えば銅で形成される。また、熱電変換素子5は通常は絶縁シート1、2より熱伝導率の高い材料、例えばクロメル、コンスタンタン等の金属又は化合物半導体材料で形成される。さらに、熱電変換素子5は電気伝導によっても伝熱するので、熱伝達材料として機能する。従って、下面1bから上面2aに流れる熱流は、主として、第1の絶縁シート1を貫通して設けられた熱伝導部材1、熱伝導部材1、2の間に配置された熱伝導素子5、及び第2の絶縁シート2を貫通して設けられた熱伝導部材2の経路で流れる。 In the thermoelectric conversion device of the present invention, the first and second insulating sheets 1 and 2 are polyester resins having excellent heat insulation properties, and the leakage heat flow flowing in the thickness direction through the upper and lower surfaces 2a and 1b is sufficiently suppressed. Is done. On the other hand, the heat conducting members 1 and 2 are made of a material having high heat conductivity, for example, copper. The thermoelectric conversion element 5 is usually formed of a material having a higher thermal conductivity than the insulating sheets 1 and 2, for example, a metal such as chromel or constantan or a compound semiconductor material. Furthermore, since the thermoelectric conversion element 5 conducts heat also by electrical conduction, it functions as a heat transfer material. Therefore, the heat flow flowing from the lower surface 1b to the upper surface 2a mainly includes the heat conducting member 1 provided through the first insulating sheet 1, the heat conducting element 5 disposed between the heat conducting members 1 and 2, and It flows through the path of the heat conducting member 2 provided through the second insulating sheet 2.
本発明の第1実施形態では、熱電変換素子は、第1の絶縁シート1上面1a上に設けられる。また、第1及び第2の熱伝導部材3,4は、それぞれ第1及び第2の絶縁シートから突出して設けられたヘッド部3a、4aにより、熱電変換素子5をその両端から挟むように設けられる。即ち、熱電変換素子の両端は、第1及び第2の熱伝導部材の突出部分(ヘッド部3a、4a)の側面に接して又は近接して配置される。 In 1st Embodiment of this invention, a thermoelectric conversion element is provided on the 1st insulating sheet 1 upper surface 1a. The first and second heat conducting members 3 and 4 are provided so that the thermoelectric conversion element 5 is sandwiched from both ends by head portions 3a and 4a provided to protrude from the first and second insulating sheets, respectively. It is done. That is, both ends of the thermoelectric conversion element are disposed in contact with or in proximity to the side surfaces of the protruding portions (head portions 3a, 4a) of the first and second heat conducting members.
この構成では、第1及び第2の熱伝導部材3,4と熱電変換素子5との間の熱伝導は、第1及び第2の熱伝導部材3,4の側面と熱電変換素子5の両端面とを通してなされる。一方、第1及び第2の熱伝導部材3、4は大きな熱伝導率を有し、かつ熱流に垂直な断面積も熱電変換素子5の断面に比べて著しく大きいので、第1及び第2の熱伝導部材3、4内部の温度差(温度分布)は熱電変換素子5内で生ずる温度差に比べて非常に小さい。従って、熱電変換素子5の両端面の温度は第1及び第2の熱伝導部材3、4にほぼ等しい温度に保持され、厚さ方向には極めて小さな温度分布しか生じない。このように、熱電変換素子5の端面は、温度分布が小さなヘッド部3a、4aの側面に接して又は近接しているから、熱電変換素子5が厚くかつ熱電変換素子5の上下方向(厚さ方向)の熱伝導率が小さい場合でも、その端面の温度は熱伝導部材3、4にほぼ等しい温度に保持される。その結果、熱電変換素子5の両端の温度差は上下方向であまり変わらず、ほぼ一定に保たれる。このため、熱電変換素子5の両端の温度差の厚さ方向分布に起因して生ずる熱電変換効率の低下が回避され、高い熱電変換効率を有する熱電変換装置100が実現される。かかる厚さ方向の温度差は、とくに、低熱伝導率の層間絶縁膜8を介して熱電変換素子又は熱電変換材料薄膜5aを多層に積層した場合に大きくなる。しかし、本第1実施形態では、上述した厚い熱電変換素子5の場合と同様に、多層であっても各層を構成する熱電変換素子5の両端の温度差はあまり変わらないので、高い熱電変換効率が実現される。 In this configuration, the heat conduction between the first and second heat conducting members 3 and 4 and the thermoelectric conversion element 5 is performed between the side surfaces of the first and second heat conducting members 3 and 4 and both ends of the thermoelectric conversion element 5. Made through the face. On the other hand, the first and second heat conducting members 3 and 4 have a large thermal conductivity, and the cross-sectional area perpendicular to the heat flow is remarkably larger than the cross section of the thermoelectric conversion element 5. The temperature difference (temperature distribution) inside the heat conducting members 3 and 4 is very small compared to the temperature difference generated in the thermoelectric conversion element 5. Therefore, the temperature of both end faces of the thermoelectric conversion element 5 is maintained at a temperature substantially equal to that of the first and second heat conducting members 3 and 4, and only a very small temperature distribution is generated in the thickness direction. Thus, since the end surface of the thermoelectric conversion element 5 is in contact with or close to the side surface of the head portions 3a and 4a having a small temperature distribution, the thermoelectric conversion element 5 is thick and the vertical direction (thickness) of the thermoelectric conversion element 5 is increased. Even when the thermal conductivity in the direction is small, the temperature of the end face is maintained at a temperature substantially equal to that of the heat conducting members 3 and 4. As a result, the temperature difference between both ends of the thermoelectric conversion element 5 does not change much in the vertical direction and is kept substantially constant. For this reason, a decrease in thermoelectric conversion efficiency caused by the distribution in the thickness direction of the temperature difference between both ends of the thermoelectric conversion element 5 is avoided, and the thermoelectric conversion device 100 having high thermoelectric conversion efficiency is realized. Such a temperature difference in the thickness direction becomes large particularly when the thermoelectric conversion elements or the thermoelectric conversion material thin films 5a are laminated in multiple layers via the interlayer insulating film 8 having a low thermal conductivity. However, in the first embodiment, as in the case of the thick thermoelectric conversion element 5 described above, the temperature difference between both ends of the thermoelectric conversion elements 5 constituting each layer does not change much even in the case of multiple layers. Is realized.
図8は本発明の第1実施形態の熱電変換素子両端の温度差を表すグラフであり、第1実施形態の熱電変換装置100の熱電変換素子5の両端に印加される温度差をシミュレーションにより算出した値を表している。なお、図8中の棒グラフAは第1実施形態の熱電変換装置100のシミュレーション結果であり、図8中の棒グラフA、Bは、従来用いられている通常の熱電変換装置のシミュレーション結果を比較例として合わせて表示したものである。図9は比較例の熱電変換装置断面図であり、図9(a)及び(b)は、図8中にそれぞれ比較例A、Bとして示すシミュレーションの対象とされた通常の熱電変換装置61、62の構造を表している。 FIG. 8 is a graph showing the temperature difference between both ends of the thermoelectric conversion element of the first embodiment of the present invention, and the temperature difference applied to both ends of the thermoelectric conversion element 5 of the thermoelectric conversion device 100 of the first embodiment is calculated by simulation. Represents the value. In addition, the bar graph A in FIG. 8 is a simulation result of the thermoelectric conversion apparatus 100 of 1st Embodiment, and the bar graphs A and B in FIG. 8 are the comparative examples of the simulation result of the normal thermoelectric conversion apparatus used conventionally. Are displayed together. FIG. 9 is a cross-sectional view of a thermoelectric conversion device of a comparative example, and FIGS. 9A and 9B are diagrams of normal thermoelectric conversion devices 61, which are simulation targets shown as comparative examples A and B in FIG. 62 structure is represented.
図9(a)を参照して,通常の熱電変換装置61は、熱電変換材料薄膜からなる熱電変換素子64を上下から、低熱伝導率材料からなる断熱性シート63で挟み込む。そして,熱電変換素子64の一端近傍の上面に絶縁膜を介して接し、断熱性シート63を貫通して断熱性シート63上面に表出する高熱電率材料65が設けられる。一方、熱電変換素子64の他端近傍の下面に絶縁膜を介して接し、断熱性シート63を貫通して下面に表出する高熱電率材料65が設けられる。 Referring to FIG. 9A, a normal thermoelectric conversion device 61 sandwiches a thermoelectric conversion element 64 made of a thermoelectric conversion material thin film from above and below with a heat insulating sheet 63 made of a low thermal conductivity material. And the high thermoelectric material 65 which contacts the upper surface of one end vicinity of the thermoelectric conversion element 64 via an insulating film, penetrates the heat insulating sheet 63, and is exposed on the upper surface of the heat insulating sheet 63 is provided. On the other hand, a high thermoelectric material 65 that is in contact with the lower surface in the vicinity of the other end of the thermoelectric conversion element 64 through an insulating film and penetrates the heat insulating sheet 63 and is exposed on the lower surface is provided.
図9(b)を参照して,他の通常の熱電変換装置62は、p型及びn型の熱電変換材料薄膜64p、64nを突き合わせてpn接合を形成する熱電変換素子64を上下から低熱伝導率材料からなる断熱性シート63で挟み込む。そして,p型熱電変換材料薄膜64pの上方及びn型熱電変換材料薄膜65nの下方に、それぞれ断熱性シート63の上面及び下面に高熱電率材料65が埋め込まれる。この通常の熱電変換装置61では、高熱電率材料65と熱電変換素子64との間に、厚さ15μmのポリエステルからなる断熱性シート63が介在している。 Referring to FIG. 9B, another ordinary thermoelectric conversion device 62 has a low thermal conductivity from the top and bottom of the thermoelectric conversion element 64 that forms a pn junction by abutting the p-type and n-type thermoelectric conversion material thin films 64p and 64n. It is sandwiched between heat insulating sheets 63 made of a rate material. Then, the high thermoelectric material 65 is embedded on the upper surface and the lower surface of the heat insulating sheet 63 above the p-type thermoelectric conversion material thin film 64p and below the n-type thermoelectric conversion material thin film 65n, respectively. In this normal thermoelectric conversion device 61, a heat insulating sheet 63 made of polyester having a thickness of 15 μm is interposed between the high thermoelectric material 65 and the thermoelectric conversion element 64.
図8に結果を示した通常の熱電変換装置61、62のシミュレートでは、断熱性シート63を厚さ50μmのポリエステル樹脂とし、高熱電率材料65を辺長50μmの正方形の平面パターンを有する銅の柱体とした。また、通常の熱電変換装置61で、高熱電率材料65と熱電変換素子64との間に介在する絶縁膜を、厚さ1μmのシリコン酸化膜とし、通常の熱電変換装置62で、高熱電率材料65と熱電変換素子64との間に介在する断熱性シート63の厚さを12μmとした。また、熱電変換素子64の形状は本発明の第1実施形態と同様とした。なお、熱電変換素子64の材料は全てクロメルとし、熱電変換素子64を複数層とする場合は、層間絶縁膜8を厚さ4μmのレジストとした。 In the simulation of the normal thermoelectric converters 61 and 62 whose results are shown in FIG. 8, the heat insulating sheet 63 is made of a polyester resin having a thickness of 50 μm, and the high thermoelectric material 65 is made of copper having a square plane pattern with a side length of 50 μm. It was a pillar body. Further, in the normal thermoelectric conversion device 61, the insulating film interposed between the high thermoelectric material 65 and the thermoelectric conversion element 64 is a silicon oxide film having a thickness of 1 μm. The thickness of the heat insulating sheet 63 interposed between the material 65 and the thermoelectric conversion element 64 was 12 μm. The shape of the thermoelectric conversion element 64 is the same as that of the first embodiment of the present invention. The material of the thermoelectric conversion element 64 is chromel, and when the thermoelectric conversion element 64 has a plurality of layers, the interlayer insulating film 8 is a resist having a thickness of 4 μm.
図8中の棒グラフAを参照して、本発明の第1実施形態にかかる熱電変換装置100では、熱電変換素子5の両端に印加される温度差は、熱電変換素子64が1層の場合はほぼ24℃であり、熱電変換素子64の層数を2層、3層と増加するに従い、ほぼ直線的に減少し、3層では22.5℃まで小さくなる。 With reference to the bar graph A in FIG. 8, in the thermoelectric conversion device 100 according to the first embodiment of the present invention, the temperature difference applied to both ends of the thermoelectric conversion element 5 is as follows when the thermoelectric conversion element 64 is one layer. It is approximately 24 ° C., and decreases almost linearly as the number of layers of the thermoelectric conversion element 64 increases to 2 layers and 3 layers.
なお、シミュレーションは、熱電変換装置101の下面(即ち、第1の絶縁シート1の下面1a)に36℃の熱源を接触させ、熱電変換装置101の上面(即ち、第2の絶縁シート1の上面2a)に6℃の熱源を接触させた場合の、熱電変換素子64の両端の温度差を算出した。ここで、図8中の温度差は、複数層の熱電変換素子64の両端の温度差を平均した値である。 In the simulation, a heat source of 36 ° C. is brought into contact with the lower surface of the thermoelectric conversion device 101 (that is, the lower surface 1a of the first insulating sheet 1), and the upper surface of the thermoelectric conversion device 101 (that is, the upper surface of the second insulating sheet 1). The temperature difference between both ends of the thermoelectric conversion element 64 was calculated when a 6 ° C. heat source was brought into contact with 2a). Here, the temperature difference in FIG. 8 is a value obtained by averaging the temperature differences at both ends of the thermoelectric conversion elements 64 of a plurality of layers.
これを通常の熱電変換装置61と比較すると、図8中の棒グラフBを参照して、通常の熱電変換装置61では、1層のときの温度差は、第1実施形態の熱電変換装置100とほぼ同じであるが、2層、3層では第1実施形態の熱電変換装置100よりも層当たりの温度差の減少が大きい。熱電変換効率は、この温度差に大きく依存する。従って、第1実施形態の熱電変換装置100は、熱電変換素子5を多層としたときに、従来用いられている通常の熱電変換装置61に較べて高い熱電変換効率を有する。 When this is compared with the normal thermoelectric converter 61, with reference to the bar graph B in FIG. 8, in the normal thermoelectric converter 61, the temperature difference at the time of one layer is different from that of the thermoelectric converter 100 of the first embodiment. Although it is substantially the same, the decrease of the temperature difference per layer is larger in the two layers and the three layers than in the thermoelectric conversion device 100 of the first embodiment. Thermoelectric conversion efficiency greatly depends on this temperature difference. Therefore, the thermoelectric conversion device 100 according to the first embodiment has a higher thermoelectric conversion efficiency than the conventional thermoelectric conversion device 61 conventionally used when the thermoelectric conversion elements 5 are multilayered.
このように、通常の熱電変換装置61で、熱電変換素子5の多層化による温度差の減少が大きい理由を、以下のように推測している。 Thus, in the normal thermoelectric conversion device 61, the reason why the decrease in the temperature difference due to the multi-layered thermoelectric conversion element 5 is large is estimated as follows.
本発明の熱電変換装置100では、多層の熱電変換素子5の全ての層が、その両端面を熱伝導部材3、4(正確にはヘッド部3a、4a)の側面に絶縁膜7を介して接している。熱伝導部材3、4及び絶縁膜7の熱伝導率は高いから、これらの内部及び表面の温度分布は小さい。従って、全ての熱電変換素子5に、熱伝導部材3、4間の温度差にほぼ等しい温度差が印加されるので、層数が増加しても温度差はあまり減少しない。 In the thermoelectric conversion device 100 of the present invention, all the layers of the multi-layer thermoelectric conversion element 5 are connected to the side surfaces of the heat conducting members 3 and 4 (more precisely, the head portions 3a and 4a) with the insulating film 7 therebetween. It touches. Since the heat conductivities of the heat conducting members 3 and 4 and the insulating film 7 are high, the temperature distribution inside and on the surfaces thereof is small. Accordingly, since a temperature difference substantially equal to the temperature difference between the heat conducting members 3 and 4 is applied to all the thermoelectric conversion elements 5, the temperature difference does not decrease so much even if the number of layers increases.
これに対して,通常の熱電変換装置61では、1層では両端が高熱伝導率材料65に絶縁膜を介して接し、その両端の温度差は、高熱伝導率材料65間の温度差と大差がない。しかし、多層になると上下の熱電変換素子64間に熱伝導率の低い層間絶縁膜が介在するため、この低熱伝導率の層間絶縁膜中の厚さ方向に大きな温度分布(温度勾配)が発生する。このため、層間絶縁膜中の温度勾配の分だけ、いい換えれば層間絶縁膜の層数に応じて、熱電変換素子64の両端の温度差が小さくなる。 In contrast, in a normal thermoelectric conversion device 61, both ends of one layer are in contact with the high thermal conductivity material 65 via an insulating film, and the temperature difference between the two ends is largely different from the temperature difference between the high thermal conductivity materials 65. Absent. However, since an interlayer insulating film having a low thermal conductivity is interposed between the upper and lower thermoelectric conversion elements 64 in a multilayer structure, a large temperature distribution (temperature gradient) is generated in the thickness direction in the interlayer insulating film having a low thermal conductivity. . For this reason, the temperature difference between both ends of the thermoelectric conversion element 64 is reduced according to the temperature gradient in the interlayer insulating film, in other words, according to the number of layers of the interlayer insulating film.
さらに、通常の熱電変換装置62では、1層の場合でも高熱伝導率材料65と熱電変換素子64p、64nとの間に低熱伝導率の断熱性シート63が介在する。従って、この介在する断熱性シート63中での大きな温度勾配により、1層の場合でも熱電変換素子64p、64nの両端に印加される温度差は小さくなる。本発明の発明者は、このように推測している。 Furthermore, in the normal thermoelectric conversion device 62, even in the case of a single layer, the heat insulating sheet 63 having a low thermal conductivity is interposed between the high thermal conductivity material 65 and the thermoelectric conversion elements 64p and 64n. Therefore, the temperature difference applied to both ends of the thermoelectric conversion elements 64p and 64n becomes small even in the case of a single layer due to the large temperature gradient in the interposed heat insulating sheet 63. The inventor of the present invention presumes in this way.
本発明の第2実施形態は、第2の熱伝導部材4の一部が埋め込まれた第2の絶縁シート2を用いて製造される熱電変換装置102に関する。 2nd Embodiment of this invention is related with the thermoelectric conversion apparatus 102 manufactured using the 2nd insulating sheet 2 in which a part of 2nd heat conductive member 4 was embedded.
図10は本発明の第2実施形態の熱電変換装置断面図であり、図1のAA’断面に相当している。なお、本第2実施形態の熱電変換装置102の平面構造は図1と同様であり、説明を簡明にするため図1を参照しつつ説明する。 FIG. 10 is a cross-sectional view of the thermoelectric conversion device according to the second embodiment of the present invention, and corresponds to the AA ′ cross-section of FIG. 1. In addition, the planar structure of the thermoelectric conversion apparatus 102 of the second embodiment is the same as that in FIG. 1 and will be described with reference to FIG.
図10を参照して、本第2実施形態の熱電変換装置102では、第2の絶縁シート2を貫通する貫通部4bが、第1の絶縁シート1の上面1aに形成された第2のヘッド部4a上面に当接するように設けられる。即ち、第2の熱伝導部材4を構成する第2のヘッド部4aと貫通部4bとはそれぞれ別個に製造され,その後当接するように組み立てられる。熱電変換装置102は、上述の貫通部4bとヘッド部4aとが分離している点、及び、第1実施形態の絶縁膜7に代えて側壁7aによる電気的絶縁が採られる点で、第1実施形態と異なる。その他の構造は、第1実施形態の熱電変換装置100と同様である。以下、製造工程を参照しつつ本第2実施形態の熱電変換装置102を説明する。 Referring to FIG. 10, in the thermoelectric conversion device 102 according to the second embodiment, the second head in which the penetrating portion 4 b penetrating the second insulating sheet 2 is formed on the upper surface 1 a of the first insulating sheet 1. It is provided so as to contact the upper surface of the portion 4a. That is, the second head portion 4a and the penetrating portion 4b constituting the second heat conducting member 4 are separately manufactured and then assembled so as to contact each other. The thermoelectric conversion device 102 is the first in that the penetrating part 4b and the head part 4a are separated from each other, and that electrical insulation is provided by the side wall 7a instead of the insulating film 7 of the first embodiment. Different from the embodiment. Other structures are the same as those of the thermoelectric conversion device 100 of the first embodiment. Hereinafter, the thermoelectric conversion device 102 of the second embodiment will be described with reference to the manufacturing process.
図11及び図12は、それぞれ本発明の第2実施形態の熱電変換装置の製造工程断面図(その1)及び本発明の第2実施形態の熱電変換装置の製造工程断面図(その2)であり、製造途中の熱電変換装置102の断面を表している。 FIGS. 11 and 12 are a manufacturing process sectional view (part 1) of the thermoelectric conversion device of the second embodiment of the present invention and a manufacturing process sectional view of the thermoelectric conversion device of the second embodiment of the present invention (part 2), respectively. The cross section of the thermoelectric conversion apparatus 102 in the middle of manufacture is represented.
図11(a)を参照して、まず、例えばポリイミド又はポリエステル樹脂からなる絶縁シート2を準備し、この絶縁シート2を貫通する穴2cを例えばレーザ加工を用いて開口する。この穴2cの配置及び直径は、図1に示す貫通部4bの形成位置及び直径と同じである。 Referring to FIG. 11A, first, an insulating sheet 2 made of, for example, polyimide or polyester resin is prepared, and a hole 2c penetrating the insulating sheet 2 is opened using, for example, laser processing. The arrangement and diameter of the holes 2c are the same as the formation position and diameter of the through portion 4b shown in FIG.
次いで、この絶縁シート2を、上面に金属膜15が積層された支持シート16上に載置し、押圧して密着する。このとき、穴2cの底面に金属膜15が表出する。 Next, the insulating sheet 2 is placed on a support sheet 16 having a metal film 15 laminated on the upper surface, and is pressed and adhered. At this time, the metal film 15 is exposed on the bottom surface of the hole 2c.
次いで、図11(b)を参照して、例えば無電解めっき法を用いて、穴2cの底面に表出する金属膜15上に高熱伝導率材料、例えば銅を堆積し、穴2cを埋め込む高熱伝導率材料からなる貫通部4bを形成する。次いで、支持シート16を剥離し、金属膜15をエッチング除去する。 Next, referring to FIG. 11B, a high heat conductivity material, for example, copper is deposited on the metal film 15 exposed on the bottom surface of the hole 2c by using, for example, an electroless plating method, and the high heat filling the hole 2c. The through portion 4b made of a conductive material is formed. Next, the support sheet 16 is peeled off, and the metal film 15 is removed by etching.
次いで、図11(c)を参照して、絶縁シート2の上面に、後工程において絶縁シート2の上面を保護するための保護シート2eをラミネートして積層する。次いで図11(d)を参照して、絶縁シート2の下面に、熱硬化性樹脂からなる絶縁性の接着層を例えばラミネートにより積層する。 Next, referring to FIG. 11C, a protective sheet 2e for protecting the upper surface of the insulating sheet 2 is laminated and laminated on the upper surface of the insulating sheet 2 in a later step. Next, referring to FIG. 11D, an insulating adhesive layer made of a thermosetting resin is laminated on the lower surface of the insulating sheet 2 by, for example, laminating.
他方、図4(a)〜(b)に示す第1実施形態と同様の工程を経て、第1実施形態と同様に、第1の絶縁シート1の上面1a上にヘッド部4a、3aを、ヘッド部4a直下に貫通部3bを形成し、さらに第1の絶縁シート1の上面1a全面を被覆するシリコン酸化膜からなる絶縁膜7を形成する(図4(c)参照)。 On the other hand, through the same steps as in the first embodiment shown in FIGS. 4A to 4B, the head portions 4a and 3a are formed on the upper surface 1a of the first insulating sheet 1 in the same manner as in the first embodiment. A through portion 3b is formed immediately below the head portion 4a, and an insulating film 7 made of a silicon oxide film covering the entire upper surface 1a of the first insulating sheet 1 is formed (see FIG. 4C).
次いで、図12(e)を参照して、絶縁膜7をエッチバックして、ヘッド部4a、3aの上面を表出すると同時に、ヘッド部4a、3aの側面にシリコン酸化膜からなる側壁7aを形成する。 Next, referring to FIG. 12E, the insulating film 7 is etched back to expose the upper surfaces of the head portions 4a and 3a, and at the same time, side walls 7a made of a silicon oxide film are formed on the side surfaces of the head portions 4a and 3a. Form.
次いで、図4(d)〜図4(e−B)に示す第1実施形態と同様の工程を経て、図12(f)を参照して、熱電変換素子5p、5n及び配線11a〜11c(図1及び図4(e−B)を参照)を形成する。 Next, through steps similar to those of the first embodiment shown in FIGS. 4D to 4E-B, referring to FIG. 12F, the thermoelectric conversion elements 5p and 5n and the wirings 11a to 11c ( 1 and 4 (e-B)).
次いで、図12(g)を参照して、絶縁シート1上に、予め製造されている図11(d)に示す絶縁シート2を、貫通部4がヘッド部4a上に位置するように位置合わせした後、接着剤6を介して圧着する。この圧着は、例えば温度150℃、5MPの下に2時間放置しておこない、同時に接着剤6を熱効果させた。 Next, referring to FIG. 12 (g), the insulating sheet 2 shown in FIG. 11 (d) that has been manufactured in advance is aligned on the insulating sheet 1 so that the penetrating portion 4 is positioned on the head portion 4a. After that, pressure bonding is performed through the adhesive 6. This pressure bonding was carried out, for example, by leaving it under a temperature of 150 ° C. and 5 MP for 2 hours, and at the same time, the adhesive 6 was subjected to a thermal effect.
以上の工程を経て、本第2実施形態の熱電変換装置102が製造される。本第2実施形態では、熱電変換素子、ヘッド部4a、第1の熱伝導部材3、配線等が形成される第1の絶縁シート1と、貫通部4bが形成される第2の絶縁シート2とを,それぞれ各別に製造することができるから、製造工程が簡素になる。 Through the above steps, the thermoelectric conversion device 102 of the second embodiment is manufactured. In the second embodiment, the first insulating sheet 1 on which the thermoelectric conversion element, the head portion 4a, the first heat conducting member 3, the wiring and the like are formed, and the second insulating sheet 2 on which the through portion 4b is formed. Can be manufactured separately, so that the manufacturing process is simplified.
本発明の第3実施形態は、2層に積層された熱電変換素子を直列接続した熱電変換装置に関する。 3rd Embodiment of this invention is related with the thermoelectric conversion apparatus which connected the thermoelectric conversion element laminated | stacked on two layers in series.
図13は本発明の第3実施形態の熱電変換装置平面図であり、図13(a)は下層の熱電変換素子5p、5nと下層の配線11の配置を、図13(b)は上層の熱電変換素子5p、5nと上層の配線11の配置を表している。図14は本発明の第3実施形態の熱電変換装置断面図であり、図13中のAA’断面を表している。 FIG. 13 is a plan view of the thermoelectric conversion device according to the third embodiment of the present invention. FIG. 13A shows the arrangement of the lower layer thermoelectric conversion elements 5p and 5n and the lower layer wiring 11, and FIG. 13B shows the upper layer. The arrangement of the thermoelectric conversion elements 5p and 5n and the upper wiring 11 is shown. FIG. 14 is a cross-sectional view of the thermoelectric conversion device according to the third embodiment of the present invention, and represents a cross section along AA ′ in FIG. 13.
図13及び図14を参照して、本発明の第3実施形態の熱電変換装置103は、図1に示す第1実施形態の熱電変換装置100と同様の配置及び形状を有する第1及び第2の熱伝導部材3、4を備え、そのヘッド部3a、4aは、第1実施形態の熱電変換装置100と同様、行列状に互いに面心位置を占めるように配置されている。 Referring to FIGS. 13 and 14, the thermoelectric conversion device 103 according to the third embodiment of the present invention has the same arrangement and shape as the thermoelectric conversion device 100 according to the first embodiment shown in FIG. 1. The heat conducting members 3 and 4 are provided, and the head portions 3a and 4a are arranged so as to occupy the face-centered positions in a matrix like the thermoelectric conversion device 100 of the first embodiment.
なお、第3実施形態の熱電変換装置103では、第1実施形態の熱電変換装置100と同様の平面パターンを有する熱電変換素子5p、5nが、同様の面内位置に2層に重ねて配置されている。その他は、第3実施形態の熱電変換装置103は第1実施形態の熱電変換装置100と同様である。以下、第3実施形態の熱電変換装置103の熱電変換素子5p、5n及びそれを接続する配線11についてより詳細に説明する。 In the thermoelectric conversion device 103 of the third embodiment, the thermoelectric conversion elements 5p and 5n having the same plane pattern as the thermoelectric conversion device 100 of the first embodiment are arranged in two layers in the same in-plane position. ing. Otherwise, the thermoelectric conversion device 103 of the third embodiment is the same as the thermoelectric conversion device 100 of the first embodiment. Hereinafter, the thermoelectric conversion elements 5p and 5n of the thermoelectric conversion device 103 according to the third embodiment and the wiring 11 connecting them will be described in more detail.
図13及び図14を参照して、本第3実施形態では、熱電変換素子5は同一平面パターンを有する下層の熱電変換素子5と上層の熱電変換素子5とからなり、この上下層の熱電変換素子5は層間絶縁膜8を介して電気的に分離されている。なお、この上下層の熱電変換素子5は、第1実施形態の熱電変換装置100の熱電変換素子5と同様の平面パターンを有し同様の面内位置に配置されている。 With reference to FIG.13 and FIG.14, in this 3rd Embodiment, the thermoelectric conversion element 5 consists of the lower-layer thermoelectric conversion element 5 and the upper-layer thermoelectric conversion element 5 which have the same plane pattern, The thermoelectric conversion of this upper and lower layers The element 5 is electrically isolated via the interlayer insulating film 8. The upper and lower thermoelectric conversion elements 5 have the same plane pattern as the thermoelectric conversion elements 5 of the thermoelectric conversion device 100 of the first embodiment and are arranged at the same in-plane positions.
図13(a)を参照して、下層の熱電変換素子5p、5nでは、p型熱電変換素子5p及びn型熱電変換素子5nが第1実施形態と同様の配列で配置される。また、熱電変換素子5p、5n間を接続する配線11a、11bも第1実施形態と同様に配置され、これにより下層の全ての熱電変換素子5p,5nが直列に接続される。なお、下層の配線11の一端は、第1実施形態と同様に外部接続用の電極パッド11cを構成し、他方、下層の配線11の他端は、ビア11vを介して上層の配線11に接続するための電極パッド11c’を構成する。 Referring to FIG. 13A, in the lower thermoelectric conversion elements 5p and 5n, the p-type thermoelectric conversion elements 5p and the n-type thermoelectric conversion elements 5n are arranged in the same arrangement as in the first embodiment. Further, the wirings 11a and 11b connecting the thermoelectric conversion elements 5p and 5n are also arranged in the same manner as in the first embodiment, whereby all the lower thermoelectric conversion elements 5p and 5n are connected in series. Note that one end of the lower wiring 11 forms an electrode pad 11c for external connection as in the first embodiment, and the other end of the lower wiring 11 is connected to the upper wiring 11 via the via 11v. An electrode pad 11c ′ is formed.
図13(b)を参照して、上層の熱電変化素子5p、5nは、第1実施形態のp型熱電変換素子5pの位置にn型熱電変換素子5nが、第1実施形態のn型熱電変換素子5nの位置にp型熱電変換素子5pが位置するように配置される。、従って、下層のp型熱電変換素子5p直上に上層のn型熱電変換素子5nが積層され、下層のn型熱電変換素子5nの直上にp型熱電変換素子5pが積層される。 Referring to FIG. 13B, the upper-layer thermoelectric change elements 5p and 5n have an n-type thermoelectric conversion element 5n at the position of the p-type thermoelectric conversion element 5p in the first embodiment and an n-type thermoelectric in the first embodiment. It arrange | positions so that the p-type thermoelectric conversion element 5p may be located in the position of the conversion element 5n. Therefore, the upper n-type thermoelectric conversion element 5n is stacked immediately above the lower p-type thermoelectric conversion element 5p, and the p-type thermoelectric conversion element 5p is stacked immediately above the lower n-type thermoelectric conversion element 5n.
また、上層の熱電変換素子5p、5n間を接続する配線11a、11bは、下層の配線11と同様に、上層の全ての熱電変換素子5p,5nを直列に接続するように配置される。なお、上層の配線11の一端が外部接続用の電極パッド11c’を構成し、他端が、下層の電極パッド11c’とビア11vを介して接続する電極パッド11c’を構成する。その結果、上下層の全ての熱電変換素子5は配線11及びビア11vを介して直列に接続され、その直列出力が外部接続用の2個の電極パッド11cから出力される。 Further, the wirings 11a and 11b that connect the upper thermoelectric conversion elements 5p and 5n are arranged so as to connect all the upper thermoelectric conversion elements 5p and 5n in series as in the lower wiring 11. One end of the upper layer wiring 11 constitutes an electrode pad 11c 'for external connection, and the other end constitutes an electrode pad 11c' connected to the lower layer electrode pad 11c 'via the via 11v. As a result, all the thermoelectric conversion elements 5 in the upper and lower layers are connected in series via the wiring 11 and the via 11v, and the series output is output from the two electrode pads 11c for external connection.
図15は本発明の第3実施形態の熱電変換素子断面図であり、図14に示す2層の熱電変換素子5p、5nの断面を拡大して表している。 FIG. 15 is a cross-sectional view of the thermoelectric conversion element according to the third embodiment of the present invention, and shows an enlarged cross section of the two-layer thermoelectric conversion elements 5p and 5n shown in FIG.
図15を参照して、例えば厚さ1μmのクロメルからなる下層のp型熱電変換素子5pが、絶縁シート1上に例えば厚さ1μmのシリコン酸化膜からなる絶縁膜7を介して形成されている。その上に、例えば厚さ1μmのコンスタンタンからなる上層のn型熱電変換素子5nが、例えば厚さ4μmのレジストからなる層間絶縁膜8を介して形成されている。その上に,例えば熱硬化性接着剤6を介して第2の絶縁シート2が貼着されている。この層間絶縁膜8は、上下の熱電変換素子5p、5nを電気的に絶縁し、また、熱の無用な漏洩を抑制するために、優れた絶縁性と高い断熱性を有することが望まれる。この観点から,絶縁性の高い樹脂が好ましく、特にパターニングが容易なレジスト(感光性樹脂)が好ましい。 Referring to FIG. 15, a lower p-type thermoelectric conversion element 5 p made of, for example, 1 μm thick chromel is formed on insulating sheet 1 with an insulating film 7 made of, for example, a 1 μm thick silicon oxide film. . An upper n-type thermoelectric conversion element 5n made of constantan having a thickness of 1 μm, for example, is formed thereon via an interlayer insulating film 8 made of a resist having a thickness of 4 μm, for example. On top of that, for example, a second insulating sheet 2 is stuck via a thermosetting adhesive 6. The interlayer insulating film 8 is desired to have excellent insulating properties and high heat insulating properties in order to electrically insulate the upper and lower thermoelectric conversion elements 5p and 5n and to suppress unnecessary leakage of heat. From this viewpoint, a highly insulating resin is preferable, and a resist (photosensitive resin) that can be easily patterned is particularly preferable.
上述した本第3実施形態の熱電変換装置103では、熱電変換素子5が2層に設けられ、面積当たりの熱電変換素子5数が多い。また、これらの熱電変換素子5が全て直列に接続されている。従って、高い出力電圧と大きな出力電力を発生することができる。 In the thermoelectric conversion device 103 of the third embodiment described above, the thermoelectric conversion elements 5 are provided in two layers, and the number of thermoelectric conversion elements 5 per area is large. Moreover, all of these thermoelectric conversion elements 5 are connected in series. Therefore, a high output voltage and a large output power can be generated.
以下本第3実施形態の熱電変換装置103の製造工程を説明する。 Hereinafter, the manufacturing process of the thermoelectric conversion device 103 of the third embodiment will be described.
図16は本発明の第3実施形態の熱電変換装置の製造工程断面図であり、製造途中の熱電変換装置の断面構造を表している。なお、図16(a)〜(b)、(d)及び(f)〜(g)は図13中のAA’断面を、図16(c−B)及び(e−B)は図13中のBB’断面を表している。但し、図16(e−B)では、下層の熱電変換素子5については図13(a)中のBB’断面で表示し、上層の熱電変換素子5については図13(b)中のBB’断面で表示している。 FIG. 16 is a cross-sectional view of the manufacturing process of the thermoelectric conversion device according to the third embodiment of the present invention, and shows the cross-sectional structure of the thermoelectric conversion device in the middle of manufacture. 16 (a) to (b), (d), and (f) to (g) are cross sections taken along line AA 'in FIG. 13, and FIGS. 16 (cB) and (eB) are in FIG. The BB 'cross section of is shown. However, in FIG. 16 (e-B), the lower layer thermoelectric conversion element 5 is indicated by the BB ′ cross section in FIG. 13 (a), and the upper layer thermoelectric conversion element 5 is indicated by BB ′ in FIG. 13 (b). The cross section is shown.
図16(a)を参照して、まず、図4(a)〜(c)に示した第1実施形態の製造工程と同様の工程を経て、絶縁シート1上面に配列されたヘッド部3a、4bと、ヘッド部3a直下に絶縁シート1を貫通する高熱伝導率材料、例えば銅からなる貫通部3bと、上面全面を被覆するシリコン酸化膜からなる絶縁膜7と、絶縁シート1下面に貼着された保護シート1eとを形成する。 Referring to FIG. 16A, first, through the same process as the manufacturing process of the first embodiment shown in FIGS. 4A to 4C, the head portions 3a arranged on the upper surface of the insulating sheet 1, 4b, a high thermal conductivity material that penetrates the insulating sheet 1 directly below the head portion 3a, for example, a penetrating portion 3b made of copper, an insulating film 7 made of a silicon oxide film covering the entire upper surface, and affixed to the lower surface of the insulating sheet 1 The formed protective sheet 1e is formed.
次いで、図16(b)を参照して、メタルマスクを用いたスパッタ法により、下層のp型熱電変換素子5p及びn型熱電変換素子5nを順次形成する。次いで、図16(c−B)を参照して、下層の配線11を例えはメタルマスクを用いたスパッタ法により形成する。 Next, referring to FIG. 16B, lower p-type thermoelectric conversion element 5p and n-type thermoelectric conversion element 5n are sequentially formed by sputtering using a metal mask. Next, with reference to FIG. 16C-B, the lower layer wiring 11 is formed by, for example, sputtering using a metal mask.
次いで、図16(d)を参照して、絶縁シート1の上面全面に、下層の熱電変換素子5上で厚さ4μmになるように層間絶縁膜8となるレジスト8をスピン塗布する。その後、露光、現像して、電極パッド11c’を表出する開口8aを開設する。この露光、現像では、下層の熱電変換素子5及び下層の配線11の余分な部分、例えばヘッド部3a、4aの側面に這い上がる部分、あるいはメタルマスクからはみ出す部分を表出するようにレジスト8をパターニングして、このレジスト8(層間絶縁膜8)をマスクとしてこれらの余分な部分をエッチング除去することもできる。 Next, referring to FIG. 16D, a resist 8 that becomes an interlayer insulating film 8 is spin-coated on the entire upper surface of the insulating sheet 1 so as to have a thickness of 4 μm on the lower thermoelectric conversion element 5. Thereafter, exposure and development are performed to open an opening 8a for exposing the electrode pad 11c '. In this exposure and development, the resist 8 is formed so as to expose an extra portion of the lower layer thermoelectric conversion element 5 and lower layer wiring 11, for example, a portion that crawls up to the side surfaces of the head portions 3a and 4a, or a portion that protrudes from the metal mask. It is also possible to carry out patterning and to remove these excess portions by etching using the resist 8 (interlayer insulating film 8) as a mask.
次いで、レジスト8上に、下層と同様の方法で、上層の熱電変換素子5p、5nを順次形成する。次いで、図16(e−B)を参照して、下層と同様の方法で、上層の配線11を形成する。このとき、電極パッド11c’は、レジスト8(層間絶縁膜8)上面から開口8aの側面及び底面に延在して形成され、開口8a底面に表出する下層の電極パッド11c’と接続される。即ち、開口8aの側面上に形成された配線11を介して、上下層の電極パッド11c’を接続するビア11vが形成される。 Next, upper layer thermoelectric conversion elements 5p and 5n are sequentially formed on the resist 8 in the same manner as the lower layer. Next, referring to FIG. 16E-B, upper layer wiring 11 is formed by the same method as the lower layer. At this time, the electrode pad 11c ′ is formed to extend from the upper surface of the resist 8 (interlayer insulating film 8) to the side surface and the bottom surface of the opening 8a, and is connected to the lower electrode pad 11c ′ exposed on the bottom surface of the opening 8a. . That is, vias 11v that connect the upper and lower electrode pads 11c 'are formed through the wiring 11 formed on the side surface of the opening 8a.
次いで、図16(f)を参照して、下面に接着剤6を設けた絶縁シート2を熱圧着し、次いで、上面2aから絶縁シート2及び絶縁膜7を貫通し、底面にヘッド部4aを表出する穴2cを開口する。この熱圧着は例えば温度150℃、5MPの圧力下に2時間保持してなされる。また、穴2cは、例えばレーザ加工、必要ならばレーザ加工に続く絶縁膜7のエッチングにより形成することがてきる。 Next, referring to FIG. 16 (f), the insulating sheet 2 provided with the adhesive 6 on the lower surface is thermocompression bonded, then the insulating sheet 2 and the insulating film 7 are penetrated from the upper surface 2a, and the head portion 4a is formed on the bottom surface. Open the exposed hole 2c. This thermocompression bonding is performed, for example, by holding at a temperature of 150 ° C. and a pressure of 5 MP for 2 hours. The hole 2c can be formed by, for example, laser processing, and if necessary, etching of the insulating film 7 following laser processing.
次いで、図16(g)を参照して、無電解銅めっきにより穴2cを埋め込み、絶縁シード2を貫通してヘッド部4aに接続する貫通部4bを形成する。最後に保護シート1eを剥離して本第3実施形態の熱電変換装置104が製造される。 Next, referring to FIG. 16G, the hole 2c is filled by electroless copper plating, and a through portion 4b penetrating the insulating seed 2 and connected to the head portion 4a is formed. Finally, the protective sheet 1e is peeled off to manufacture the thermoelectric conversion device 104 of the third embodiment.
本発明の第4実施形態は、単一の導電型の熱電変換素子5を用いた熱電変換装置104に関する。 The fourth embodiment of the present invention relates to a thermoelectric conversion device 104 using a single conductivity type thermoelectric conversion element 5.
図17は本発明の第4実施形態の熱電変換装置平面図であり、絶縁シート1上に配置 されたヘッド部3a、4a、熱電変換素子5−1〜5−12及び配線11b〜11dを表している。 FIG. 17 is a plan view of the thermoelectric conversion device according to the fourth embodiment of the present invention, showing the head portions 3a, 4a, thermoelectric conversion elements 5-1 to 5-12, and wires 11b to 11d arranged on the insulating sheet 1. ing.
図17を参照して、本第4実施形態の熱電変換装置104では、ヘッド部3a、4a及び熱電変換素子5が、第1実施形態と同様の位置と形状で絶縁シート1上に形成される。この構成では、縦及び横に隣接する熱電変換素子5には互いに逆向きに起電力が発生する。例えば、熱電変換素子5−1の下に隣接する熱電変換素子5−9及び横に隣接する熱電変換素子5−2には、熱電変換素子5−1と逆向きの起電力が発生する。本第4実施形態の配線11は、これら熱電変換素子5−1〜5−12の全てを直列に接続するように配置される。 Referring to FIG. 17, in the thermoelectric conversion device 104 of the fourth embodiment, the head portions 3a, 4a and the thermoelectric conversion element 5 are formed on the insulating sheet 1 in the same position and shape as in the first embodiment. . In this configuration, electromotive forces are generated in opposite directions in the thermoelectric conversion elements 5 that are adjacent vertically and horizontally. For example, an electromotive force opposite to that of the thermoelectric conversion element 5-1 is generated in the thermoelectric conversion element 5-9 adjacent to the thermoelectric conversion element 5-1 and the thermoelectric conversion element 5-2 adjacent to the side. The wiring 11 of the fourth embodiment is arranged so as to connect all of these thermoelectric conversion elements 5-1 to 5-12 in series.
配線11の始点となる外部接続用の電極パッド11c−1は、1行1列目に配置された熱電変換素子5−1の下端(図17の紙面内下方の端)に接続される。次いで、この熱電変換素子5−1の上端は、配線11bを介して1行2列目に配置された熱電変換素子5−2の上端に接続される。熱電変換素子5−1と熱電変換素子5−2とは互いに起電力が逆向きなので、この配線11bにより、配線11の延在方向に沿う起電力の方向が同じ向きになるように、即ち直列に接続される。 The electrode pad 11c-1 for external connection serving as the starting point of the wiring 11 is connected to the lower end (the lower end in the drawing in FIG. 17) of the thermoelectric conversion element 5-1 arranged in the first row and the first column. Next, the upper end of the thermoelectric conversion element 5-1 is connected to the upper end of the thermoelectric conversion element 5-2 arranged in the first row and the second column via the wiring 11b. Since the electromotive force of the thermoelectric conversion element 5-1 and the thermoelectric conversion element 5-2 is opposite to each other, the direction of the electromotive force along the extending direction of the wiring 11 is the same direction by this wiring 11b, that is, in series. Connected to.
さらに、熱電変換素子5−2とその右横に隣接する熱電変換素子5−3との下端同士を配線11bで接続し、熱電変換素子5−3とその右横に隣接する熱電変換素子5−4との上端同士を配線11bで接続する。これにより、横に並ぶ熱電変換素子5−1〜5−4は直列に接続される。 Further, the lower ends of the thermoelectric conversion element 5-2 and the thermoelectric conversion element 5-3 adjacent to the right side thereof are connected to each other by the wiring 11b, and the thermoelectric conversion element 5-3 and the thermoelectric conversion element 5- adjacent to the right side thereof are connected. 4 are connected by wiring 11b. Thereby, the thermoelectric conversion elements 5-1 to 5-4 arranged side by side are connected in series.
次いで、熱電変換素子5−4の下端とその下方に隣接する熱電変換素子5−5の下端とを、配線11dを介して接続する。これにより、熱電変換素子5−4、5−5は直列に接続される。 Next, the lower end of the thermoelectric conversion element 5-4 is connected to the lower end of the thermoelectric conversion element 5-5 adjacent below the thermoelectric conversion element 5-4 via the wiring 11d. Thereby, the thermoelectric conversion elements 5-4 and 5-5 are connected in series.
さらに、1行目と同様に、熱電変換素子5−5の上端と熱電変換素子5−6の上端、熱電変換素子5−6の下端と熱電変換素子5−7の下端、及び、熱電変換素子5−7の上端と熱電変換素子5−8の上端を接続する配線11bにより、2行目の熱電変換素子5−4〜熱電変換素子5−8は直列に接続される。 Further, as in the first row, the upper end of the thermoelectric conversion element 5-5, the upper end of the thermoelectric conversion element 5-6, the lower end of the thermoelectric conversion element 5-6, the lower end of the thermoelectric conversion element 5-7, and the thermoelectric conversion element The thermoelectric conversion elements 5-4 to 5-8 in the second row are connected in series by the wiring 11b connecting the upper ends of 5-7 and the upper ends of the thermoelectric conversion elements 5-8.
同様に、2行目左端の熱電変換素子5−8と3行目左端の熱電変換素子5−9は配線11dにより直列に接続され、また、3行目の熱電変換素子5−9〜5−12は配線11bにより直列に接続される。その結果、全ての熱電変換素子5−1〜5−12は直列に接続される。 Similarly, the thermoelectric conversion element 5-8 at the left end of the second row and the thermoelectric conversion element 5-9 at the left end of the third row are connected in series by a wiring 11d, and the thermoelectric conversion elements 5-9 to 5- 12 are connected in series by wiring 11b. As a result, all the thermoelectric conversion elements 5-1 to 5-12 are connected in series.
本第4実施形態の熱電変換装置104は、同一導電型の熱電変換素子5を用いるので製造工程が簡易になる。 Since the thermoelectric conversion device 104 of the fourth embodiment uses the thermoelectric conversion element 5 of the same conductivity type, the manufacturing process is simplified.
本発明の第5実施形態は、柱体状の熱伝導部材を有する熱電変換装置105に関する。以下、その製造工程を参照して詳細を説明する。 5th Embodiment of this invention is related with the thermoelectric conversion apparatus 105 which has a column-shaped heat conductive member. Details will be described below with reference to the manufacturing process.
図18は本発明の第5実施形態の熱電変換装置の製造工程断面図であり、製造途中及び製造された熱電変換装置の断面を表している。なお、本第5実施形態の熱電変換装置106の平面図は図1に示す第1実施形態の平面図と同様である。また、図18(a)、(b)〜(d)は図18中のAA’断面を、図18(a−B)は図18中のBB’断面を表している。ここで、図(a)及び図(a−B)は同一製造工程における2断面を表している。 FIG. 18 is a cross-sectional view of a manufacturing process of the thermoelectric conversion device according to the fifth embodiment of the present invention, and shows a cross section of the thermoelectric conversion device in the middle of manufacturing. In addition, the top view of the thermoelectric conversion apparatus 106 of this 5th Embodiment is the same as the top view of 1st Embodiment shown in FIG. 18A, 18B and 18D show the AA 'cross section in FIG. 18, and FIGS. 18A-B show the BB' cross section in FIG. Here, the figure (a) and the figure (a-B) represent two cross sections in the same manufacturing process.
図18(a)〜(a−B)、及び図18(b)を参照して、本第5実施形態では、初めに、第1の中間部材1Aと第2の中間部材2Aとを製造する。 Referring to FIGS. 18A to 18B and FIG. 18B, in the fifth embodiment, first, the first intermediate member 1A and the second intermediate member 2A are manufactured. .
図18(a)〜(a−B)を参照して、第1の中間部材1Aは、第1の熱伝導部材3が設けられた第1の絶縁シート1の上面に絶縁膜7を介して熱電変換素子5p、5nが形成され、その上を覆う絶縁膜7b及び下面を覆う保護膜1eを備えている。これら、第1の熱伝導部材3、熱電変換素子5p、5nは第1の実施形態と同様である。 Referring to FIGS. 18A to 18A, the first intermediate member 1A has an insulating film 7 on the upper surface of the first insulating sheet 1 on which the first heat conducting member 3 is provided. Thermoelectric conversion elements 5p and 5n are formed, and an insulating film 7b covering the thermoelectric conversion elements 5p and 5n and a protective film 1e covering the lower surface are provided. The first heat conducting member 3 and the thermoelectric conversion elements 5p and 5n are the same as those in the first embodiment.
第1の中間部材1Aの製造では、まず、第1の絶縁シート1に第1の熱伝導部材3を形成したのち、絶縁シート1の上面全面を覆う絶縁膜7を形成し、次いで、第1の熱伝導部材3のヘッド部3aの側面に一端を接する熱電変換素子5p、5nを形成する。次いで、熱電変換素子5p、5nを接続する配線11a〜11cを形成する。これらの工程は、以下の点を除き、図4(a)〜図4(f−B)に示す第1実施形態の製造工程と同様にしてよい。 In the manufacture of the first intermediate member 1A, first, the first heat conductive member 3 is formed on the first insulating sheet 1, and then the insulating film 7 covering the entire upper surface of the insulating sheet 1 is formed, and then the first Thermoelectric conversion elements 5p and 5n having one end in contact with the side surface of the head portion 3a of the heat conducting member 3 are formed. Next, wirings 11a to 11c connecting the thermoelectric conversion elements 5p and 5n are formed. These steps may be the same as the manufacturing steps of the first embodiment shown in FIGS. 4A to 4F-B except for the following points.
本第5実施形態では、第1実施形態と異なり、第1の絶縁シート1には第1の熱伝導部材3が形成され,第2の熱伝導部材4はヘッド部4aを含めて全く形成されない。従って、熱電変換素子5p、5nの他端は、第2の熱伝導部材4に接することなく、第2の熱伝導部材4のヘッド部4aが緩嵌可能な間隔を設けて互いに対向している。なお、絶縁膜7を柔軟性ある断熱材料、例えは厚さ1μmの樹脂薄膜とすることが好ましい。 In the fifth embodiment, unlike the first embodiment, the first heat conductive member 3 is formed on the first insulating sheet 1, and the second heat conductive member 4 is not formed at all including the head portion 4a. . Accordingly, the other ends of the thermoelectric conversion elements 5p and 5n are not in contact with the second heat conducting member 4 and are opposed to each other with a space where the head portion 4a of the second heat conducting member 4 can be loosely fitted. . The insulating film 7 is preferably a flexible heat insulating material, for example, a resin thin film having a thickness of 1 μm.
次いで、絶縁シート1上全面に絶縁膜7bを形成する。この絶縁膜7bは、熱電変換素子5p、5nの保護のために設けられ、必要なければ設けなくともよい。 Next, an insulating film 7 b is formed on the entire surface of the insulating sheet 1. The insulating film 7b is provided for protecting the thermoelectric conversion elements 5p and 5n, and may be omitted if not necessary.
図18(b)を参照して、第2の中間部材2Aは、第2の絶縁シート2と、第2の絶縁シート2を貫通する貫通部4b及び貫通部4b上に形成されたヘッド部4aとからなる第2の熱伝導部材4と、第2の絶縁シート2上にヘッド部4aを埋め込む接着剤6とを備える。また、ヘッド部4a形成面の反対面を被覆する保護膜2eが設けられる。この第2の熱伝導部材4は第1実施形態の第2の熱伝導部材4と同様の材料、形状を有す。 Referring to FIG. 18B, the second intermediate member 2A includes a second insulating sheet 2, a penetrating portion 4b penetrating the second insulating sheet 2, and a head portion 4a formed on the penetrating portion 4b. And a second heat conducting member 4 and an adhesive 6 for embedding the head portion 4a on the second insulating sheet 2. Further, a protective film 2e that covers the surface opposite to the surface on which the head portion 4a is formed is provided. The second heat conducting member 4 has the same material and shape as the second heat conducting member 4 of the first embodiment.
かかる第2の中間部材2Aは、図4(a)〜(c)に示す第1実施形態での熱伝導部材3、4の製造工程と同様の工程により製造することがてきる。但し、図4(c)に示す第1の熱伝導部材3を形成することなく、第2の熱伝導部材4のみを形成する。さらに、図4(c)に示す絶縁膜7を形成しない。 The second intermediate member 2A can be manufactured by a process similar to the process of manufacturing the heat conducting members 3 and 4 in the first embodiment shown in FIGS. 4 (a) to 4 (c). However, only the second heat conductive member 4 is formed without forming the first heat conductive member 3 shown in FIG. Further, the insulating film 7 shown in FIG. 4C is not formed.
次いで、図18(c)を参照して、第2の中間部材2Aを上下反転して、第1の中間部材1A上に、第2の熱伝導部材4のヘッド部4aが熱電変換素子5p、5nの対向する他端面の間に位置するように位置合わせして載置する。その後、図18(d)を参照して、圧力5MP、温度150℃に2時間保持して接着剤6を硬化させ、第1及び第2の中間部材1A、2Aを貼着する。最後に、保護膜1e、2eを剥離して、本第5実施形態の熱電変換素子105が製造される。この貼着の際、ヘッド部3a、4aの先端が第1及び第2の絶縁シート1、2の表面に埋め込まれ、これに伴いヘッド部3a、4aの先端周縁近くの絶縁膜7、7bも絶縁シート1、2に埋め込まれるように変形する。従って、絶縁膜7、7bは、かかる変形により破壊されないように、断熱性及び絶縁性の他に柔軟性を有する薄膜、例えばレジストのような樹脂薄膜とすることが好ましい。 Next, with reference to FIG. 18C, the second intermediate member 2A is turned upside down, and the head portion 4a of the second heat conducting member 4 is placed on the first intermediate member 1A. It is positioned and placed so as to be positioned between the opposite end surfaces of 5n. Then, with reference to FIG.18 (d), it hold | maintains at pressure 5MP and temperature 150 degreeC for 2 hours, the adhesive agent 6 is hardened, and the 1st and 2nd intermediate members 1A and 2A are stuck. Finally, the protective films 1e and 2e are peeled off to manufacture the thermoelectric conversion element 105 of the fifth embodiment. At the time of sticking, the tips of the head portions 3a and 4a are embedded in the surfaces of the first and second insulating sheets 1 and 2, and accordingly, the insulating films 7 and 7b near the tips of the head portions 3a and 4a are also formed. It is deformed so as to be embedded in the insulating sheets 1 and 2. Therefore, the insulating films 7 and 7b are preferably thin films having flexibility in addition to heat insulating properties and insulating properties, for example, resin thin films such as resists, so that they are not destroyed by such deformation.
本第5実施形態では、熱伝導部材3a及び熱電変換素子5p、5nが形成された第1の中間部材1Aと、熱伝導部材4aが形成された第2の中間部材を各別に製造した後、貼着することで製造する。この第1及び第2の中間部材1A、2Aの熱伝導部材3a、4aは同様の工程5で形成され、また、貼着後は穴あけ又はパターニング等の複雑な工程がないので、製造工程が簡素である。 In the fifth embodiment, after manufacturing the first intermediate member 1A in which the heat conductive member 3a and the thermoelectric conversion elements 5p and 5n are formed and the second intermediate member in which the heat conductive member 4a is formed, respectively, Manufactured by sticking. The heat conducting members 3a and 4a of the first and second intermediate members 1A and 2A are formed in the same step 5, and there is no complicated process such as drilling or patterning after the bonding, so that the manufacturing process is simple. It is.
本発明の第6実施形態は、柱状の熱伝導部材3a、4aを有する熱電変換装置106に関する。以下、第6実施形態の熱電変換装置106をその製造工程を参照しつつ説明する。 The sixth embodiment of the present invention relates to a thermoelectric conversion device 106 having columnar heat conducting members 3a and 4a. Hereinafter, the thermoelectric conversion apparatus 106 of 6th Embodiment is demonstrated, referring the manufacturing process.
図19は本発明の第6実施形態の熱電変換装置の製造工程断面図であり、製造途中の熱電変換装置を表している。 FIG. 19 is a manufacturing process sectional view of the thermoelectric conversion device according to the sixth embodiment of the present invention, and represents the thermoelectric conversion device in the middle of manufacture.
図19(a)を参照して、まず、第1の絶縁シート上に短冊状の平面パターンを有する熱電変換素子5p、5nを行列状に配置して形成する。なお、図19の左右方向を列方向としている。次いで、図19(b)を参照して、列方向に隣接する熱電変換素子5p、5n間を接続する導電膜11Aを形成する。この導電膜11Aは、必要ならば後に形成される熱伝導部材3、4の外周を廻り隣接する熱電変換素子5p、5nを互いに接続するか、あるいは、熱伝導部材3、4形成用の穴1c、2cの形成により隣接する熱電変換素子5p、5n間の接続が切断されるように平面パターンが設計される。 Referring to FIG. 19A, first, thermoelectric conversion elements 5p and 5n having a strip-like plane pattern are arranged in a matrix on the first insulating sheet. Note that the horizontal direction in FIG. 19 is the column direction. Next, referring to FIG. 19B, a conductive film 11A that connects between the thermoelectric conversion elements 5p and 5n adjacent in the column direction is formed. The conductive film 11A connects the adjacent thermoelectric conversion elements 5p and 5n around the outer periphery of the heat conducting members 3 and 4 to be formed later if necessary, or connects the holes 1c for forming the heat conducting members 3 and 4 to each other. The planar pattern is designed so that the connection between the adjacent thermoelectric conversion elements 5p and 5n is cut by forming 2c.
次いで、図19(c)を参照して、下面に接着剤6を設けた第2の絶縁シート2を第1の絶縁シート1上に貼着する。この貼着は、温度150℃、圧力5MPの下に2時間保持することでなされた。 Next, with reference to FIG. 19 (c), the second insulating sheet 2 provided with the adhesive 6 on the lower surface is stuck on the first insulating sheet 1. This sticking was carried out by holding for 2 hours under a temperature of 150 ° C. and a pressure of 5 MP.
次いで、図19(d)を参照して、第1の絶縁シート1の下面から第1の絶縁シート1、導電膜11及び接着剤6を貫通し、底面(上面)に第2の絶縁シート2を表出する穴1cを形成する。また、第2の絶縁シート2の上面から第2の絶縁シート2、導電膜11及び接着剤6を貫通し、底面(下面)に第1の絶縁シート1を表出する穴2cを形成する。この穴1c、2cの形成により、導電膜11Aはパターニングされ、熱電変換素子5p、5n間を接続する配線11aが形成される。これらの穴1c、2cは、柱状、例えば4角柱または円柱の形状に開設され、第1実施形態のヘッド部3a、4aと同様の配置、即ち熱電変換素子5p、5nの間に設けられる。かかる穴1c、2cの開口は、レーザ加工によりなすことができる。 Next, referring to FIG. 19D, the first insulating sheet 1, the conductive film 11 and the adhesive 6 are penetrated from the lower surface of the first insulating sheet 1, and the second insulating sheet 2 is formed on the bottom surface (upper surface). Is formed. Moreover, the 2nd insulating sheet 2, the electrically conductive film 11, and the adhesive agent 6 are penetrated from the upper surface of the 2nd insulating sheet 2, and the hole 2c which exposes the 1st insulating sheet 1 is formed in a bottom face (lower surface). By forming the holes 1c and 2c, the conductive film 11A is patterned to form wirings 11a connecting the thermoelectric conversion elements 5p and 5n. These holes 1c and 2c are opened in a columnar shape, for example, a quadrangular prism or a cylindrical shape, and are provided in the same arrangement as the head portions 3a and 4a of the first embodiment, that is, between the thermoelectric conversion elements 5p and 5n. The opening of the holes 1c and 2c can be made by laser processing.
次いで、図19(e)を参照して、例えばCVD法を用いて貼着された絶縁シート2、2の全面にシリコン酸化膜を形成し、上下面上のシリコン酸化膜を除去することで、穴1c、2cの内壁を覆うシリコン酸化膜からなる絶縁膜7cを形成する。この絶縁膜7cは、穴1c、2cの側壁面に露出する導電膜11A(配線11a)の端面を被覆するもので、穴1c、2cの底面に形成されていなくても差し支えない。 Next, referring to FIG. 19 (e), for example, by forming a silicon oxide film on the entire surface of the insulating sheets 2 and 2 adhered by using the CVD method, and removing the silicon oxide films on the upper and lower surfaces, An insulating film 7c made of a silicon oxide film covering the inner walls of the holes 1c and 2c is formed. The insulating film 7c covers the end surface of the conductive film 11A (wiring 11a) exposed on the side wall surfaces of the holes 1c and 2c, and may not be formed on the bottom surfaces of the holes 1c and 2c.
次いで、図19(f)を参照して、穴1c、2cを高熱伝導率材料、例えば無電解めっきを用いた銅で埋込み、絶縁シート1、2を貫通する高熱伝導率材料の柱体からなる第1及び第2の熱伝導部材3、4を形成する。これにより、本第6実施形成の熱電変換装置106が製造される。 Next, referring to FIG. 19F, the holes 1c and 2c are filled with a high thermal conductivity material, for example, copper using electroless plating, and are made of columns of the high thermal conductivity material penetrating the insulating sheets 1 and 2. First and second heat conducting members 3 and 4 are formed. Thereby, the thermoelectric conversion device 106 according to the sixth embodiment is manufactured.
さらに、図19(g)を参照して、第1の絶縁シート1の下面及び第2の絶縁シート2の上面全面に、高熱伝導率材料、例えば銅の薄板からなる熱拡散板12を形成することもできる。この熱拡散板12は、熱源と熱伝導部材3、4との間の吸熱及び放熱に起因して生ずる絶縁シート1、2上下面の温度分布を緩和する。これにより、熱電変換装置の変換効率の低下が抑制される。 Further, referring to FIG. 19G, a heat diffusion plate 12 made of a high thermal conductivity material, for example, a copper thin plate is formed on the entire lower surface of the first insulating sheet 1 and the entire upper surface of the second insulating sheet 2. You can also The heat diffusion plate 12 relaxes the temperature distribution of the upper and lower surfaces of the insulating sheets 1 and 2 caused by heat absorption and heat dissipation between the heat source and the heat conducting members 3 and 4. Thereby, the fall of the conversion efficiency of a thermoelectric converter is suppressed.
上述した本第6実施形成の熱電変換装置106は、熱電変換素子5p、5n及び導電膜11Aを平坦な絶縁シート1上面に形成するので、容易に精密なパターンを形成することができる。また、ヘッド部3a、4aを形成する工程が無いので、製造工程が簡素である。 Since the thermoelectric conversion device 106 according to the sixth embodiment described above forms the thermoelectric conversion elements 5p, 5n and the conductive film 11A on the top surface of the flat insulating sheet 1, a precise pattern can be easily formed. Further, since there is no process for forming the head portions 3a, 4a, the manufacturing process is simple.
本発明の第7実施形態は、錐体状の熱伝導部材を用いた熱電変換装置107に関する。 The seventh embodiment of the present invention relates to a thermoelectric conversion device 107 using a cone-shaped heat conduction member.
図20は本発明の第7実施形態の熱電変換装置平面図であり、支持シート20上に形成された熱電変換素子5n、5p及び熱伝達部材25と、熱伝導部材23a、24aとの配置を表している。なお、図20は、熱電変換素子5n、5pの上面近傍の配置を表している。図21は本発明の第7実施形態の熱電変換装置断面図であり、図20中のAA’断面を表している。 FIG. 20 is a plan view of the thermoelectric conversion device according to the seventh embodiment of the present invention. The arrangement of the thermoelectric conversion elements 5n and 5p and the heat transfer member 25 formed on the support sheet 20 and the heat conducting members 23a and 24a is shown. Represents. FIG. 20 shows the arrangement in the vicinity of the upper surfaces of the thermoelectric conversion elements 5n and 5p. FIG. 21 is a cross-sectional view of a thermoelectric conversion device according to a seventh embodiment of the present invention, showing a cross section AA ′ in FIG. 20.
図20及び図21を参照して、本第7実施形態の熱電変換装置107では、支持シート20の上面に、例えば幅60μm、長さ90μmの熱電変換素子5n、5pが所与の間隔、例えば120μmの間隔をあけて図20の紙面の上下方向に一列に配置されている。この熱電変換素子5n、5pは、p型とn型とが交互に位置するように配置される。さらに、かかる熱電変換素子5n、5pの列を複数列、例えば480μmのピッチ間隔で互いに平行に配置される。従って、熱電変換素子5n、5pは行列状に配置される。このとき、隣接する列のp型とn型の熱電変換素子5p、5nが、互いに同一導電型となるように配置すると、全ての熱電変換素子5p、5nを容易に直列接続できるので好ましい。 20 and 21, in the thermoelectric conversion device 107 of the seventh embodiment, the thermoelectric conversion elements 5n and 5p having a width of 60 μm and a length of 90 μm, for example, are provided on the upper surface of the support sheet 20, for example, They are arranged in a line in the vertical direction on the paper surface of FIG. 20 with an interval of 120 μm. The thermoelectric conversion elements 5n and 5p are arranged so that p-type and n-type are alternately positioned. Furthermore, a plurality of rows of the thermoelectric conversion elements 5n and 5p are arranged in parallel with each other at a pitch interval of, for example, 480 μm. Therefore, the thermoelectric conversion elements 5n and 5p are arranged in a matrix. At this time, it is preferable to arrange the p-type and n-type thermoelectric conversion elements 5p, 5n in adjacent rows so as to have the same conductivity type, because all the thermoelectric conversion elements 5p, 5n can be easily connected in series.
なお、図20では図を簡明にするため、熱電変換素子5n、5pを3行4列に配置した図を示したが、実用的な電圧を発生するために多数の素子を、例えば4000個の熱電変換素子5n、5pを100行40列に配置することもできる。図21はかかる多数の熱電変換素子5n、5pが配列された熱電変換装置107を描いている。 In order to simplify the drawing, FIG. 20 shows a diagram in which the thermoelectric conversion elements 5n and 5p are arranged in 3 rows and 4 columns. However, in order to generate a practical voltage, a large number of elements are used, for example, 4000 pieces. The thermoelectric conversion elements 5n and 5p can also be arranged in 100 rows and 40 columns. FIG. 21 illustrates a thermoelectric conversion device 107 in which a large number of such thermoelectric conversion elements 5n and 5p are arranged.
支持シート20は、断熱性及び絶縁性に優れ、少なくとも後述の接合工程において必要とされる可塑性を有する材料、例えばポリエチレン樹脂シートが用いられる。支持シート20の厚さは、熱電変換素子、熱伝達部を形成し、支持できる強度を必要とし、例えば厚さ30μmとされる。 The support sheet 20 is excellent in heat insulation and insulation, and a material having plasticity required in at least a joining process described later, for example, a polyethylene resin sheet is used. The thickness of the support sheet 20 needs to be strong enough to form and support a thermoelectric conversion element and a heat transfer portion, and is set to a thickness of 30 μm, for example.
熱伝達部材25は、少なくとも後述の接合工程において必要とされる可塑性を有する高熱伝導率材料からなり、列方向に隣接する熱電変換素子5n、5p間に、両端が隣接する熱電変換素子5n、5pの対向する端に接して設けられる。 The heat transfer member 25 is made of a high thermal conductivity material having plasticity required in at least a joining process described later, and the thermoelectric conversion elements 5n, 5p having both ends adjacent to each other between the thermoelectric conversion elements 5n, 5p adjacent in the column direction. Are provided in contact with the opposite ends.
例えば熱伝達部材25は、幅150μm、列方向の長さ180μmの矩形パターンに形成され、熱電変換素子5n、5pの端から30μmの距離まで熱電変換素子5n、5pの上面を覆うように設けられる。あるいは、直径180μmの円形パターン(熱電変換素子5n、5pの対向する端の周辺上面に30μm延在する。)としても差し支えない。 For example, the heat transfer member 25 is formed in a rectangular pattern having a width of 150 μm and a length in the column direction of 180 μm, and is provided so as to cover the upper surfaces of the thermoelectric conversion elements 5n and 5p from the ends of the thermoelectric conversion elements 5n and 5p to a distance of 30 μm. . Alternatively, it may be a circular pattern having a diameter of 180 μm (extending 30 μm on the upper surface around the opposite ends of the thermoelectric conversion elements 5n and 5p).
この熱伝達部材25を、熱伝導率の高い導電体、例えば導電ペーストにより形成することができる。同時に、隣接する列を接続する配線11b、必要ならば外部接続用の電極パッド11cをも導電ペーストにより形成してもよい。これにより、熱電変換素子5n、5p間を接続する配線を、熱伝達部材25で兼用することができ、配線11形成工程を省略することがてきる。なお、熱伝達部材25を絶縁体で形成するときは、第1 実施形態と同様に、熱電変換素子5n、5p間を接続する配線11a〜11cを熱伝達部材25とは別に形成する。 The heat transfer member 25 can be formed of a conductor having high thermal conductivity, such as a conductive paste. At the same time, the wiring 11b for connecting adjacent columns and, if necessary, the electrode pad 11c for external connection may also be formed with a conductive paste. Thereby, the wiring which connects between the thermoelectric conversion elements 5n and 5p can be shared by the heat transfer member 25, and the wiring 11 formation process can be omitted. When the heat transfer member 25 is formed of an insulator, the wires 11a to 11c that connect the thermoelectric conversion elements 5n and 5p are formed separately from the heat transfer member 25, as in the first embodiment.
図21を参照して、上面に熱電変換素子5n、5p及び熱伝達部材25が形成された支持シート20の上面に、接着剤6が充填された隙間9を介して第4の絶縁シート22が貼着されている。また、支持シート20の下面に、第3の絶縁シート21が貼着される。この第3及び第4の絶縁シート21、22の材料は、断熱性及び可撓性を有する絶縁材料、例えば厚さ40μmのポリエステル樹脂が用いられる。 Referring to FIG. 21, the fourth insulating sheet 22 is formed on the upper surface of the support sheet 20, on which the thermoelectric conversion elements 5 n and 5 p and the heat transfer member 25 are formed, through the gap 9 filled with the adhesive 6. It is stuck. A third insulating sheet 21 is attached to the lower surface of the support sheet 20. As the material of the third and fourth insulating sheets 21 and 22, an insulating material having heat insulation and flexibility, for example, a polyester resin having a thickness of 40 μm is used.
第3の絶縁シート21の下面及び第4の絶縁シート22のそれぞれの上面に、錐体状の、例えば円錐又は角錐の高熱伝導率材料、例えば銅からなる熱伝導部材23、24のヘッド部23a、24aが形成されている。なお、これらヘッド部23a、24aは、少なくとも先端部分が錐体であればよく、例えは先端が尖った柱体とすることもできる。 On the lower surface of the third insulating sheet 21 and the upper surface of the fourth insulating sheet 22, the head portions 23a of the heat conductive members 23, 24 made of a cone-shaped, for example, conical or pyramidal high thermal conductivity material, for example, copper. , 24a are formed. Note that these head portions 23a and 24a only need to have a cone at least at the tip, and may be a column with a sharp tip, for example.
第3の絶縁シート21上面に設けられたヘッド部23aは、支持シート20を貫通し、さらに熱伝達部材25のほぼ中央を貫通し、その上端が第4の絶縁シート22の下面に突き刺さるように設けられている。一方、第4の絶縁シート22下面に設けられたヘッド部24aは、熱伝達部材25のほぼ中央を貫通し、さらに支持シート20を貫通したのち、その下端が第3の絶縁シート21の上面に突き刺さるように設けられている。なお、これらのヘッド部23a、24aは熱伝達部材25を貫通していれば、必ずしもその先端が対向する絶縁シート21、22に接していなくてもよい。 The head portion 23 a provided on the upper surface of the third insulating sheet 21 penetrates the support sheet 20, further penetrates substantially the center of the heat transfer member 25, and its upper end pierces the lower surface of the fourth insulating sheet 22. Is provided. On the other hand, the head portion 24 a provided on the lower surface of the fourth insulating sheet 22 penetrates substantially the center of the heat transfer member 25 and further penetrates the support sheet 20, and then the lower end thereof is on the upper surface of the third insulating sheet 21. It is provided to pierce. In addition, as long as these head parts 23a and 24a have penetrated the heat transfer member 25, the front-end | tip does not necessarily need to contact the insulating sheets 21 and 22 which oppose.
再び図20及び図21を参照して、ヘッド部23a、24aは、その断面が支持シート20上面でほぼ等しい大きさを有するように形成される。具体的には、ヘッド部23a、24aをそれぞれ、直径180μm及び120μm、高さが共にほぼ50μmの円錐体とした。その結果、支持シート20上面で、ヘッド部23a、24aの直径はほぼ60μmとなる。なお、先端のみが尖った柱状のヘッド部23a、24aを用いて、ヘッド部23a、24aの底面を小さくしてもよい。 Referring to FIGS. 20 and 21 again, the head portions 23a and 24a are formed so that their cross sections have substantially the same size on the upper surface of the support sheet 20. Specifically, each of the head portions 23a and 24a is a cone having a diameter of 180 μm and 120 μm and a height of approximately 50 μm. As a result, on the upper surface of the support sheet 20, the head portions 23a and 24a have a diameter of approximately 60 μm. In addition, the bottom surfaces of the head portions 23a and 24a may be made small by using columnar head portions 23a and 24a having only sharp tips.
これらのヘッド部23a、24aは、熱伝達部材25のほぼ中央を貫通するように、即ち、列方向に隣接する熱電変換素子5p、5nの間のほぼ中央を貫通するように設けられる。従って、ヘッド部23a、24aの一つに両側から隣接する熱電変換素子5p、5nは、その一つのヘッド部に対し、熱伝達部材25を介してほぼ対称に配置される。 These head portions 23a and 24a are provided so as to penetrate substantially the center of the heat transfer member 25, that is, to penetrate substantially the center between the thermoelectric conversion elements 5p and 5n adjacent in the column direction. Accordingly, the thermoelectric conversion elements 5p and 5n adjacent to one of the head portions 23a and 24a from both sides are disposed substantially symmetrically with respect to the one head portion via the heat transfer member 25.
さらに、第3の絶縁シート21に、錐体状ヘッド部23aの底面に接し絶縁シート21を貫通する柱体状の貫通部23bが、第4の絶縁シート22に、錐体状ヘッド部24aの底面に接し絶縁シート21を貫通する柱体状の貫通部24bが形成されている。このヘッド部23a、24aと貫通部23b、24bはそれぞれ一体として熱伝導部材23、24を構成する。熱電変換素子5p、5nの端面は、この熱伝導部材23、24の側面(錐面)に熱伝達部材25を介して熱的に接続される。従って、第1実施形態の熱電変換装置101と同様、膜厚が厚い又は多層膜からなる熱電変換素子5p、5nを用いた場合でも、熱電変換素子5p、5nの両端の温度差を大きく維持することができ、高い熱電変換効率が実現される。 Further, the third insulating sheet 21 has a columnar penetrating portion 23b that is in contact with the bottom surface of the conical head portion 23a and penetrates the insulating sheet 21, and the fourth insulating sheet 22 has a conical head portion 24a. A columnar penetrating portion 24b that is in contact with the bottom surface and penetrates the insulating sheet 21 is formed. The head portions 23a and 24a and the through portions 23b and 24b constitute the heat conducting members 23 and 24, respectively. The end surfaces of the thermoelectric conversion elements 5p and 5n are thermally connected to the side surfaces (conical surfaces) of the heat conducting members 23 and 24 via the heat transfer member 25. Therefore, similarly to the thermoelectric conversion device 101 of the first embodiment, even when the thermoelectric conversion elements 5p and 5n having a large film thickness or a multilayer film are used, the temperature difference between both ends of the thermoelectric conversion elements 5p and 5n is maintained large. And high thermoelectric conversion efficiency is realized.
以下、本第7実施形態の熱電変換装置107の製造工程を説明する。 Hereinafter, the manufacturing process of the thermoelectric conversion device 107 of the seventh embodiment will be described.
図22〜図24は本発明の第7実施形態の熱電変換装置製造工程断面図(その1)〜(その3)であり、製造途中の熱電変換装置107を表している。なお、図22は熱電変換素子5p、5nが形成されたシート中間体20Aの製造工程を、図23は熱伝導部材23、24が形成されたシート中間体21A、22Aの製造工程を、及び図24はこれらのシート中間体20A、21A、22Aを貼着して熱電変換装置107を製造する工程を表している。 22-24 is sectional drawing (the 1)-(the 3) of the thermoelectric conversion apparatus manufacturing process of 7th Embodiment of this invention, and represents the thermoelectric conversion apparatus 107 in the middle of manufacture. 22 shows a manufacturing process of the sheet intermediate body 20A on which the thermoelectric conversion elements 5p and 5n are formed. FIG. 23 shows a manufacturing process of the sheet intermediate bodies 21A and 22A on which the heat conductive members 23 and 24 are formed. Reference numeral 24 denotes a process of manufacturing the thermoelectric conversion device 107 by sticking these sheet intermediates 20A, 21A, and 22A.
図22(a)を参照して、シート中間体20Aの製造では、まず、厚さ30μmのポリエステル樹脂からなる支持シート20の上面に、例えばメタルマスクを用いたスパッタ法により、行列状に配置された熱電変換素子5p、5nを形成する。この熱電変換素子5p、5nは、例えば支持シート20の幅方向に40列、延在方向に100行設けられる。 Referring to FIG. 22A, in the manufacture of the sheet intermediate 20A, first, the upper surface of the support sheet 20 made of a polyester resin having a thickness of 30 μm is arranged in a matrix by, for example, a sputtering method using a metal mask. The thermoelectric conversion elements 5p and 5n are formed. The thermoelectric conversion elements 5p and 5n are provided in, for example, 40 columns in the width direction of the support sheet 20 and 100 rows in the extending direction.
次いで、図22(b)を参照して、列方向に隣接する熱電変換素子5p、5nの間に、熱電変換素子5p、5nの対向する端を接続する導電性ペーストからなる熱伝達部材25を、例えば導電性ペーストの印刷又は滴下により形成する。この熱伝達部材25は、熱電変換素子5p、5nの対向する端の周辺上面を被覆するように形成される。 Next, referring to FIG. 22B, a heat transfer member 25 made of a conductive paste that connects opposite ends of the thermoelectric conversion elements 5p, 5n between the thermoelectric conversion elements 5p, 5n adjacent in the column direction. For example, it is formed by printing or dropping a conductive paste. The heat transfer member 25 is formed so as to cover the peripheral upper surface of the opposing ends of the thermoelectric conversion elements 5p and 5n.
次いで、図22(c)を参照して、絶縁性の熱硬化型の接着剤6を15μmの厚さに塗布した。これらの工程を経て、支持シート20上面に熱電変換素子5p、5n,熱伝達部材25及び上面が平坦な接着剤6が形成されたシート状のシート中間体20Aが形成される。 Next, referring to FIG. 22C, an insulating thermosetting adhesive 6 was applied to a thickness of 15 μm. Through these steps, a sheet-like sheet intermediate 20A in which the thermoelectric conversion elements 5p, 5n, the heat transfer member 25, and the adhesive 6 having a flat upper surface are formed on the upper surface of the support sheet 20 is formed.
次に、シート中間体21A、22Aの製造工程を説明する。 Next, the manufacturing process of the sheet intermediates 21A and 22A will be described.
図23(a)を参照して、シート中間体21Aの製造では、まず、上面に厚さ50μmの銅層が積層された例えは厚さ40μmのポリエステル樹脂からなる第3の絶縁シート21を準備する。次いで、例えば第3の絶縁シート21の下面にレーザ光を照射して、絶縁シート21を貫通し、底面に銅層を表出する穴21cを開口する。次いで、穴21cを銅で埋め込み、銅柱からなる貫通部23bを形成する。この貫通部23bは、例えば銅の無電解めっき又電解めっきにより形成することができる。その後、絶縁シート21の下面に、厚さ10μmの銅層を形成する。この下面の銅層は、蒸着又はスパッタにより、或いは電解めっきによる貫通部23bの形成に続く電解めっきにより形成することができる。 Referring to FIG. 23A, in the manufacture of the sheet intermediate 21A, first, a third insulating sheet 21 made of a polyester resin having a thickness of 40 μm, for example, a copper layer having a thickness of 50 μm is prepared. To do. Next, for example, the lower surface of the third insulating sheet 21 is irradiated with laser light, and a hole 21c that penetrates the insulating sheet 21 and exposes the copper layer is opened on the bottom surface. Next, the hole 21c is filled with copper to form a through portion 23b made of a copper pillar. The through portion 23b can be formed by, for example, copper electroless plating or electrolytic plating. Thereafter, a copper layer having a thickness of 10 μm is formed on the lower surface of the insulating sheet 21. The copper layer on the lower surface can be formed by vapor deposition or sputtering, or by electrolytic plating following the formation of the through portion 23b by electrolytic plating.
次いで、絶縁シート21下面の銅層をホトエッチングして、各貫通部23bごとに島状に残る銅層からなる金属層26を形成する。この金属層26は、後工程で貫通部23bが絶縁シート21から剥落することを防止する。また、熱拡散板としても機能する。 Next, the copper layer on the lower surface of the insulating sheet 21 is photoetched to form a metal layer 26 made of a copper layer that remains in an island shape for each through portion 23b. This metal layer 26 prevents the penetration part 23b from peeling off from the insulating sheet 21 in a later step. It also functions as a heat diffusion plate.
次いで、絶縁シート21上面の銅層上に円形平面パターンを有するマスク28を形成し、反応性イオンエッチングにより直径がヘッド部23aの最大直径(錐体の底面直径)を有する円柱状の銅からなる柱状突起27を形成する。なお、マスク28を例えば矩形パターンとすることで矩形の柱状突起を形成することもできる。 Next, a mask 28 having a circular plane pattern is formed on the copper layer on the upper surface of the insulating sheet 21 and is made of columnar copper having a maximum diameter (bottom diameter of the cone) of the head portion 23a by reactive ion etching. Columnar protrusions 27 are formed. In addition, a rectangular columnar protrusion can be formed by making the mask 28 into a rectangular pattern, for example.
次いで、図23(b)を参照して、柱状突起27をイオンミリングする。このとき、柱状突起27は、マスク28の端面からの直径の減少に伴い、上面外周から傾斜面を形成するように除去される。その結果、図23(c)を参照して、ついには柱状突起27は円錐状に加工され、ヘッド部23aが形成される。 Next, referring to FIG. 23B, the columnar protrusions 27 are ion milled. At this time, the columnar protrusion 27 is removed so as to form an inclined surface from the outer periphery of the upper surface as the diameter decreases from the end surface of the mask 28. As a result, referring to FIG. 23C, the columnar protrusion 27 is finally processed into a conical shape to form the head portion 23a.
この工程を経て、第3の絶縁シート21の上面に円錐状のヘッド部23aを備える第3の熱伝導部材23が形成され、下面に貫通部23bに接する島状の金属層26を備えたシート中間体21Aが製造される。さらに、同様の製造工程により,第4の絶縁シート22の下面に円錐状のヘッド部24aを備える第4の熱伝導部材24が形成され、上面に貫通部24bに接する島状の金属層26を備えたシート中間体22Aが形成される。このシート中間体22Aは、柱状突起27の直径が異なること、及び、上下が反転していることを除きシート中間体21Aと同様であり、同様の工程により製造することができる。 Through this process, the third heat conductive member 23 having the conical head portion 23a is formed on the upper surface of the third insulating sheet 21, and the sheet having the island-shaped metal layer 26 in contact with the through portion 23b on the lower surface. Intermediate 21A is manufactured. Further, by the same manufacturing process, the fourth heat conductive member 24 having the conical head portion 24a is formed on the lower surface of the fourth insulating sheet 22, and the island-shaped metal layer 26 in contact with the penetrating portion 24b is formed on the upper surface. The provided sheet intermediate 22A is formed. This sheet intermediate 22A is the same as the sheet intermediate 21A except that the diameter of the columnar protrusions 27 is different and the top and bottom are inverted, and can be manufactured by the same process.
このシート中間体21A、22Aは、絶縁シート21、22のヘッド部23a、24a形成面に、ヘッド部23a、24aを被覆して保護する軟質の保護テープを貼着し、ロール状に巻回して保存することもできる。 The sheet intermediates 21A and 22A are formed by attaching a soft protective tape that covers and protects the head portions 23a and 24a to the surfaces of the insulating sheets 21 and 22 on which the head portions 23a and 24a are formed, and winding them in a roll shape. It can also be saved.
次に、図24を参照して、上述した図22に示す工程により製造されたシート中間体20Aの上下面に、それぞれ図23に示す工程により製造されたシート中間体21A、22Aを圧着する。 Next, referring to FIG. 24, the sheet intermediates 21A and 22A manufactured by the process shown in FIG. 23 are respectively crimped to the upper and lower surfaces of the sheet intermediate 20A manufactured by the process shown in FIG.
この圧着工程では、まず、ロール状に巻かれたシート中間体20Aを水平に引き出し、水平に張持する。次いで、ロール状に巻かれたシート中間体22A、21Aを水平に引き出し、それぞれシート中間体20Aの上下に水平に保持する。このとき、ヘッド部21a、22a形成面(21a、22b)を、シート中間体20Aの上下面に平行に対向させる。この状態で、平面視したとき、ヘッド部21a、22aが熱伝達部材25の中心に位置するように、シート中間体22A、21Aを位置合わせする。 In this crimping step, first, the sheet intermediate 20A wound in a roll shape is pulled out horizontally and stretched horizontally. Next, the sheet intermediate bodies 22A and 21A wound in a roll shape are pulled out horizontally and held horizontally above and below the sheet intermediate body 20A, respectively. At this time, the head portions 21a and 22a forming surfaces (21a and 22b) are opposed to the upper and lower surfaces of the sheet intermediate 20A in parallel. In this state, the sheet intermediates 22A and 21A are aligned so that the head portions 21a and 22a are positioned at the center of the heat transfer member 25 when viewed in plan.
次いで、上下からローラで加熱,押圧して、シート中間体20Aの上面にシート中間体22Aを、シート中間体20Aの下面にシート中間体21Aを熱圧着する。この熱圧着は、例えば温度150℃、圧力10MPの下でなされ、その後接着剤及び熱伝達部材25を熱硬化させるための熱処理を温度150℃で2時間行った。 Next, the sheet intermediate 22A is heated and pressed with rollers from above and below, and the sheet intermediate 22A is thermocompression bonded to the upper surface of the sheet intermediate 20A and the sheet intermediate 21A is thermocompression bonded to the lower surface of the sheet intermediate 20A. This thermocompression bonding is performed, for example, under a temperature of 150 ° C. and a pressure of 10 MP, and then a heat treatment for thermosetting the adhesive and the heat transfer member 25 is performed at a temperature of 150 ° C. for 2 hours.
この熱圧着の際、シート中間体21Aの上面21aに形成されている錐体状のヘッド部21aは、加熱されて軟化した支持シート20に食い込み、支持シート20を貫通して、さらに導電ペーストからなる熱伝達部材25を貫通する。さらに、シート中間体20Aの上面に貼着(熱密着)されたシート中間体21Aの絶縁シート22の下面22bに、ヘッド部21aの先端を食い込ませても差し支えない。その後、熱圧着されたシート中間体20A、21A、22Aを幅方向に切断し、各熱電変換装置107ごとに分離する。 At the time of this thermocompression bonding, the cone-shaped head portion 21a formed on the upper surface 21a of the sheet intermediate 21A bites into the heated and softened support sheet 20, penetrates through the support sheet 20, and further from the conductive paste. The heat transfer member 25 is penetrated. Furthermore, the tip of the head portion 21a may be bitten into the lower surface 22b of the insulating sheet 22 of the sheet intermediate 21A that is adhered (thermally adhered) to the upper surface of the sheet intermediate 20A. Then, the sheet intermediates 20 </ b> A, 21 </ b> A, and 22 </ b> A that have been thermocompression bonded are cut in the width direction and separated for each thermoelectric conversion device 107.
以上の熱雨着工程を経て、本第7実施形態の熱電変換装置107が製造される。この第7実施形態では、3種類のシート中間体20A、21A、22Aを各別に製造したのち、熱圧着により製造される。これらのシート中間体20A、21A、22Aはロール状に巻いて保存、運搬することができ、また熱圧着はロールを用いた連続工程により製造することができるので、大量生産を行うに適している。 The thermoelectric conversion device 107 according to the seventh embodiment is manufactured through the above thermal raining process. In the seventh embodiment, three types of sheet intermediates 20A, 21A, and 22A are manufactured separately and then manufactured by thermocompression bonding. These sheet intermediates 20A, 21A, and 22A can be rolled and stored and transported, and thermocompression bonding can be produced by a continuous process using a roll, which is suitable for mass production. .
本発明をシート状の熱電変換装置に適用することで、複数層又は厚い熱電変換素子を用いた変換効率の高い熱電変換装置が提供される。 By applying the present invention to a sheet-like thermoelectric conversion device, a thermoelectric conversion device having a high conversion efficiency using a plurality of layers or thick thermoelectric conversion elements is provided.
1 絶縁シート(第1の絶縁シート)
1A、2A 中間部材
1a、2a 上面
1b、2b 下面
1c、2c 穴
1d 銅層
1e、2e 保護シート
2 絶縁シート(第2の絶縁シート)
3 熱伝導部材(第1の熱伝導部材)
3a、4a ヘッド部
3b、4b 貫通部
4 熱伝導部材(第2の熱伝導部材)
5、5n、5p 熱電変換素子
5a 熱電変換材料薄膜
6 接着剤
7、7b 絶縁膜
7a 側壁
8 層間絶縁膜(レジスト)
9 隙間
11、11a、11b 配線
11c、11c’ 電極パッド
11v ビア
11A 導電膜
11D 配線接触領域
12 熱拡散板
15 金属膜
16、20 支持シート
20A、21A、22A シート中間体
21 第3の絶縁シート
21a、22a 上面
21b、22b 下面
22 第4の絶縁シート
23 第3の熱伝導部材
23a 第3のヘッド部
23b 第3の貫通部
24 第4の熱伝導部材
24a 第4のヘッド部
24b 第4の貫通部
25 熱伝達部材
26 金属層
27 柱状突起
28 マスク
61、62 通常の熱電変換装置
63 断熱性シート
64、64p、64n 熱電変換素子
65 高熱伝導率材料
66 電極
100、101、102、103、104、105、106 熱電変換装置
1 Insulation sheet (first insulation sheet)
1A, 2A Intermediate member 1a, 2a Upper surface 1b, 2b Lower surface 1c, 2c Hole 1d Copper layer 1e, 2e Protective sheet 2 Insulating sheet (second insulating sheet)
3 heat conduction member (first heat conduction member)
3a, 4a Head part 3b, 4b Penetration part 4 Thermal conduction member (2nd thermal conduction member)
5, 5n, 5p Thermoelectric conversion element 5a Thermoelectric conversion material thin film 6 Adhesive 7, 7b Insulating film 7a Side wall 8 Interlayer insulating film (resist)
9 Gap 11, 11a, 11b Wiring 11c, 11c ′ Electrode pad 11v Via 11A Conductive film 11D Wiring contact area 12 Thermal diffusion plate 15 Metal film 16, 20 Support sheet 20A, 21A, 22A Sheet intermediate 21 Third insulating sheet 21a 22a Upper surface 21b, 22b Lower surface 22 Fourth insulating sheet 23 Third heat conducting member 23a Third head portion 23b Third penetrating portion 24 Fourth heat conducting member 24a Fourth head portion 24b Fourth penetrating Part 25 heat transfer member 26 metal layer 27 columnar projection 28 mask 61, 62 normal thermoelectric conversion device 63 heat insulating sheet 64, 64p, 64n thermoelectric conversion element 65 high thermal conductivity material 66 electrode 100, 101, 102, 103, 104, 105, 106 Thermoelectric converter
Claims (8)
前記第1の絶縁シート上に隙間を介して積層された第2の絶縁シートと、
前記第1の絶縁シートを貫通して前記第1の絶縁シートの上面に突出する、前記第1及び第2の絶縁シートより高熱伝導率材料からなる第1の熱伝導部材と、
前記第2の絶縁シートを貫通して前記第2の絶縁シートの下面に突出する、前記第1及び第2の絶縁シートより高熱伝導率材料からなる第2の熱伝導部材と、
前記第1の絶縁シートの上面上であって前記第1の熱伝導部材と前記第2の熱伝導部材との間に設けられた熱電変換素子と、
前記隙間を充填する接着剤と、
を有する熱電変換装置。 A first insulating sheet;
A second insulating sheet laminated on the first insulating sheet via a gap;
A first heat conducting member made of a material having a higher thermal conductivity than the first and second insulating sheets, which penetrates the first insulating sheet and protrudes from the upper surface of the first insulating sheet;
A second heat conducting member made of a material having a higher thermal conductivity than the first and second insulating sheets, which penetrates the second insulating sheet and protrudes from the lower surface of the second insulating sheet;
A thermoelectric conversion element provided on the upper surface of the first insulating sheet and provided between the first heat conductive member and the second heat conductive member;
An adhesive filling the gap;
A thermoelectric conversion device.
前記熱電変換素子は、前記格子の各列を構成する前記第1及び第2の熱伝導部材の間に配置されることを特徴とする請求項1記載の熱電変換装置。 The first heat conducting member and the second heat conducting member are arranged in a two-dimensional lattice so as to occupy face center positions in a plane parallel to the first and second insulating sheets,
The thermoelectric conversion device according to claim 1, wherein the thermoelectric conversion element is disposed between the first and second heat conducting members constituting each row of the lattice.
前記第1の絶縁シートを貫通して前記第1のヘッド部の下面に接する柱状の第1の貫通部とを有し、
前記第2の熱伝導部材は、前記第1の絶縁シート上面に形成された柱状の第2のヘッド部と,
前記第2の絶縁シートを貫通して前記第1のヘッド部の上面に接する柱状の第2の貫通部とを有し、
前記熱電変換素子は、前記第1及び第2のヘッド部の間に配置されたことを特徴とする請求項1又は2記載の熱電変換装置。 The first heat conducting member includes a columnar first head portion formed on an upper surface of the first insulating sheet;
A columnar first penetrating portion that penetrates the first insulating sheet and contacts the lower surface of the first head portion;
The second heat conducting member includes a columnar second head portion formed on the upper surface of the first insulating sheet;
A column-shaped second penetrating portion that penetrates the second insulating sheet and contacts the upper surface of the first head portion;
The thermoelectric conversion device according to claim 1, wherein the thermoelectric conversion element is disposed between the first and second head portions.
隣接する前記熱電変換素子の間に設けられ、互いに対向する前記熱電変換素子の端部を熱的に接続する熱伝達部材と、
前記支持シートの下面に積層された第3の絶縁シートと、
前記支持シートの上面に接着剤が充填された隙間を介して積層された第4の絶縁シートと、
前記第3の絶縁シート上面に形成され、前記支持シート、前記第3の絶縁シート及び第4の絶縁シートより高熱伝導率材料からなり上端部分が尖った錐体状をなす第3のヘッド部と、
前記第4の絶縁シート下面に形成され、前記支持シート、前記第3の絶縁シート及び第4の絶縁シートより高熱伝導率材料からなり下端部分が尖った錘体状をなす第4のヘッド部と、
前記第3の絶縁シートを貫通して前記第3のヘッド部の下面に接する第3の貫通部と、
前記第4の絶縁シートを貫通して前記第4のヘッド部の上面に接する第4の貫通部とを有し、
前記第3のヘッド部は、前記支持シート及び前記熱伝達部材を貫通して設けられ、
前記第4のヘッド部は、前記隙間及び前記熱伝達部材を貫通して設けられた熱電変換装置。 A support sheet made of a thermoplastic resin sheet in which a plurality of thermoelectric conversion elements are arranged on the upper surface;
A heat transfer member that is provided between adjacent thermoelectric conversion elements and thermally connects ends of the thermoelectric conversion elements facing each other;
A third insulating sheet laminated on the lower surface of the support sheet;
A fourth insulating sheet laminated via a gap filled with an adhesive on the upper surface of the support sheet;
A third head portion formed on the upper surface of the third insulating sheet and made of a material having a higher thermal conductivity than the support sheet, the third insulating sheet, and the fourth insulating sheet and having a cone shape with a sharp upper end portion; ,
A fourth head portion formed on a lower surface of the fourth insulating sheet, and having a weight-like shape made of a material having a higher thermal conductivity than the support sheet, the third insulating sheet, and the fourth insulating sheet, and having a sharp lower end portion; ,
A third penetrating portion that penetrates the third insulating sheet and contacts the lower surface of the third head portion;
A fourth penetrating portion that penetrates the fourth insulating sheet and contacts the upper surface of the fourth head portion;
The third head portion is provided through the support sheet and the heat transfer member,
The fourth head portion is a thermoelectric conversion device provided through the gap and the heat transfer member.
前記第1の穴に前記高熱伝導率材料を埋込み、前記第1の絶縁シートを貫通して前記高熱伝導率材料からなる層の下面に接する前記高熱伝導率材料からなる第1の貫通部を形成する工程と、
前記高熱伝導率材料からなる層をパターニングして、前記第1の貫通部の直上及び前記第1の貫通部から離れた位置に、それぞれ柱状の前記高熱伝導率材料からなる第1及び第2のヘッド部を形成する工程と、
前記第1の絶縁シートの上面上であって前記第1及び第2のヘッド部の間に、熱電変換素子を形成する工程と、
次いで、前記高熱伝導率材料より低熱伝導率材料からなる第2の絶縁シートを、前記第1の絶縁シート上に接着剤を介して貼着する工程と、
前記第2の絶縁シートを貫通し、底面に前記第2のヘッド部上面を表出する第2の穴を形成する工程と、
前記第2の穴に前記高熱伝導率材料を埋込み、前記第2の絶縁シートを貫通して前記第2のヘッド部上面に接する前記高熱伝導率材料からなる第2の貫通部を形成する工程と、
を有する熱電変換装置の製造方法。 Forming a first hole penetrating the first insulating sheet in a first insulating sheet made of a material having a lower thermal conductivity than the high thermal conductivity material laminated on the upper surface with a layer made of a high thermal conductivity material; When,
The high thermal conductivity material is embedded in the first hole, and a first penetration portion made of the high thermal conductivity material is formed through the first insulating sheet and in contact with a lower surface of the layer made of the high thermal conductivity material. And a process of
The layer made of the high thermal conductivity material is patterned, and the first and second pillars made of the high thermal conductivity material are respectively formed immediately above the first through portion and at positions away from the first through portion. Forming a head part;
Forming a thermoelectric conversion element on the upper surface of the first insulating sheet and between the first and second head portions;
Next, a step of attaching a second insulating sheet made of a material having a lower thermal conductivity than the high thermal conductivity material, onto the first insulating sheet via an adhesive;
Forming a second hole penetrating the second insulating sheet and exposing the upper surface of the second head portion on the bottom surface;
Embedding the high thermal conductivity material in the second hole, and forming a second through portion made of the high thermal conductivity material through the second insulating sheet and in contact with the upper surface of the second head portion; ,
The manufacturing method of the thermoelectric conversion apparatus which has.
前記熱電変換素子が形成された前記第1の絶縁シート上に、接着剤を介して第2の絶縁シートを貼着する工程と、
前記熱電変換素子の一端外側に、前記第1の絶縁シート及び前記接着剤を貫通する第3の穴を形成する工程と、
前記熱電変換素子の他端外側に、前記第2の絶縁シート及び前記接着剤を貫通する第4の穴を形成する工程と、
前記第3及び第4の穴に、前記第1及び第2の絶縁シートより熱伝導率の高い材料からなる高熱伝導率材料を埋込み、前記第1の絶縁シートを貫通し前記第1の絶縁シートの上面に突出する前記高熱伝導率材料からなる第1の熱伝導部材、及び、前記第2の絶縁シートを貫通し前記第2の絶縁シートの下面に突出する前記高熱伝導率材料からなる第2の熱伝導部材を形成する工程と、
を有する熱電変換装置の製造方法。 Forming a thermoelectric conversion element on the upper surface of the first insulating sheet;
A step of attaching a second insulating sheet via an adhesive on the first insulating sheet on which the thermoelectric conversion element is formed;
Forming a third hole penetrating the first insulating sheet and the adhesive on one outer side of the thermoelectric conversion element;
Forming a fourth hole penetrating the second insulating sheet and the adhesive outside the other end of the thermoelectric conversion element;
A high thermal conductivity material made of a material having a higher thermal conductivity than the first and second insulating sheets is embedded in the third and fourth holes, and the first insulating sheet penetrates through the first insulating sheet. A first heat conducting member made of the high thermal conductivity material projecting on the upper surface of the second insulating sheet, and a second heat conducting material made of the high heat conductivity material penetrating the second insulating sheet and projecting on the lower surface of the second insulating sheet. Forming a heat conducting member of
The manufacturing method of the thermoelectric conversion apparatus which has this.
隣接する前記熱電変換素子の対向する端部を熱的に接続するように前記熱電変換素子の間の前記支持シート上に設けられた、前記支持シートより高熱伝導率の第1の高熱伝導率材料からなる熱伝達部材を形成する工程と、
前記熱伝達部材が形成された前記支持シート上に、接着剤を塗布する工程と、
前記第1の高熱伝導率材料より低熱伝導率材料からなり可撓性を有する絶縁シートに、前記絶縁シートの一主面上に設けられ、前記絶縁シート及び前記支持シートより高熱伝導率の第2の高熱伝導率材料からなる先端部分が尖った錐体状のヘッド部と、前記絶縁シートを貫通して前記ヘッド部底面に接する前記第2の高熱伝導率材料からなる貫通部とを、前記絶縁シートの延在方向に沿って前記熱伝達部材間の2倍の間隔で列設する工程と、
次いで、張持された前記支持シートの上下に、前記絶縁シートを、前記ヘッド部先端が前記支持シートに対向し、かつ、前記支持シートの上下面に対向する前記ヘッド部が互いに隣の前記熱伝達部材の直上に位置するように保持する工程と、
次いで、前記支持シートの上下面に前記絶縁シートを熱圧着して、前記ヘッド部を、前記支持シートの上下面から、それぞれ前記支持シートの上下面に熱圧着された前記絶縁シートを貫通し、さらに前記熱伝達部材を貫通させる工程と、
を有することを特徴とする熱電変換装置の製造方法。 A step of arranging thermoelectric conversion elements on an insulating support sheet;
A first high thermal conductivity material having a higher thermal conductivity than the support sheet, provided on the support sheet between the thermoelectric conversion elements so as to thermally connect opposing ends of the adjacent thermoelectric conversion elements. Forming a heat transfer member comprising:
Applying an adhesive on the support sheet on which the heat transfer member is formed;
The insulating sheet made of a material having a lower thermal conductivity than the first high thermal conductivity material and having flexibility is provided on one main surface of the insulating sheet, and has a second thermal conductivity higher than that of the insulating sheet and the support sheet. A cone-shaped head portion having a pointed tip portion made of a high thermal conductivity material and a penetrating portion made of the second high thermal conductivity material that penetrates the insulating sheet and contacts the bottom surface of the head portion. Arranging the heat transfer members between the heat transfer members along the extending direction of the sheets at a double interval;
Next, the insulating sheet is placed above and below the stretched support sheet, and the head portions with the tip of the head portion facing the support sheet and the top and bottom surfaces of the support sheet facing each other are adjacent to each other. Holding it so as to be located immediately above the transmission member;
Next, the insulating sheet is thermocompression bonded to the upper and lower surfaces of the support sheet, and the head portion penetrates the insulating sheet thermocompression bonded to the upper and lower surfaces of the support sheet, respectively. A step of penetrating the heat transfer member;
The manufacturing method of the thermoelectric conversion apparatus characterized by having.
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