JP2011222654A - Structure of multi-concatenation seebeck coefficient amplification thermoelectric conversion element, structure of multi-concatenation seebeck coefficient amplification thermoelectric conversion unit, structure and production method of multi-concatenation seebeck coefficient amplification thermoelectric conversion assembly unit, structure and production method of multi-concatenation seebeck coefficient amplification thermoelectric conversion module, structure and production method of multi-concatenation seebeck coefficient amplification thermoelectric conversion panel, structure and production method of multi-concatenation seebeck coefficient amplification thermoelectric conversion sheet, and structure of multi-concatenation seebeck coefficient amplification thermoelectric conversion system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide means for solving a problem in which there is an upper limit in improving thermoelectric conversion efficiency, the limit determined by a thermoelectric conversion material, and preventing stoppage of a function of an entire multi-concatenation thermoelectric conversion assembly unit when a part of elements therein is disconnected; and to provide a method for more simply producing the multi-concatenation thermoelectric conversion assembly unit.SOLUTION: Three or more conductive members having a positive or negative Seebeck coefficient, and conductive members having a Seebeck coefficient of the same code are electrically inter-connected in series using conductive connecting members. The configuration of connection is such that the conductive members are at both ends. This configuration of connection makes it possible to amplify a value of the Seebeck coefficient of a single conductive member. Further, a multi-concatenation Seebeck coefficient amplification thermoelectric conversion unit is configured in which a set of multi-concatenation Seebeck coefficient amplification thermoelectric conversion element having a positive Seebeck coefficient and multi-concatenation Seebeck coefficient amplification thermoelectric conversion element having a negative Seebeck coefficient is joined by a joining conductive member, and a pair of output terminals are connected to the counterparts of the connected conductive members using the joining conductive member.

Description

  The present invention relates to a structure of a multi-coupled Seebeck coefficient amplification effect thermoelectric conversion unit that is highly functionalized using a Seebeck coefficient amplification effect that increases the efficiency of mutual conversion between heat flow power and electric power, a manufacturing method thereof, and a multi-connection Seebeck coefficient amplification effect. Thermoelectric conversion assembly unit and manufacturing method thereof, multi-connection Seebeck coefficient amplification effect thermoelectric conversion module and manufacturing method thereof, multi-connection Seebeck coefficient amplification effect thermoelectric conversion panel and manufacturing method thereof, structure of multi-connection Seebeck coefficient amplification effect thermoelectric conversion sheet and the like The present invention relates to a manufacturing method and a structure of a multi-connection Seebeck coefficient amplification effect thermoelectric conversion system.

  At present, 2/3 of the total energy consumption in the world is not effectively utilized due to waste heat and the like, which is a factor that increases global warming and environmental destruction. Solar cells, wind power generation, wave power generation, etc. are sustainable power systems originating from solar energy, but the most abundant solar and earth-derived solar blackbody absorption heat and solar cell transmission light blackbody absorption in the environment Sustainable temperature difference between heat, hot spring heat, geothermal heat, etc. and river water or cold water using vaporization heat, etc. It has not spread.

  The reason why the renewable thermoelectric conversion system has not been put into practical use and popularized is that the thermoelectric conversion efficiency between heat power and electric power is low. The physical Seebeck coefficient amplification effect that dramatically increases this low thermoelectric conversion efficiency has been clarified by theory and demonstration experiments, and it is now possible to put into practical use and widespread use of a renewable thermoelectric conversion system comparable to solar cells. ing.

  In general, the manufacturing process of a semiconductor thermoelectric module using a semiconductor (thermoelectric conversion material) with a thickness of several millimeters or the integration using a thermoelectric conversion material with a thickness of tens to hundreds of hundreds of a semiconductor type thermoelectric conversion material The unit of the thermoelectric conversion unit incorporated in the three types of manufacturing processes of the circuit manufacturing process or the thin film manufacturing process using the thermoelectric conversion material of about several tens to several hundreds of the thickness of the integrated circuit type thermoelectric conversion material is , All have the same connection form. Due to this common feature, hereinafter, the units of the thermoelectric conversion unit having a common connection form by these three types of manufacturing processes are collectively referred to as a thermoelectric conversion unit, and the thermoelectric conversion units by the three types of manufacturing processes are mutually referred to. When distinguishing, it describes as a thermoelectric conversion unit of a semiconductor type, an integrated circuit type, or a thin film type. Furthermore, the semiconductor-type thermoelectric conversion module, the integrated circuit-type thermoelectric conversion chip, or the thermoelectric conversion thin film, which are aggregate units of the thermoelectric conversion units manufactured by the three types of manufacturing processes, all have the same connection form.

  The collective unit for thermoelectric conversion having the collective connection form common to the three types of manufacturing processes is collectively referred to as a thermoelectric conversion collective unit, and the thermoelectric conversion collective units by the three types of manufacturing processes are distinguished from each other. Is described as a thermoelectric conversion collective unit of a semiconductor type, an integrated circuit type or a thin film type. Furthermore, a module manufactured by connecting a plurality of thermoelectric conversion collective units by the above three types of manufacturing processes is referred to as a thermoelectric conversion module, and when the thermoelectric conversion modules by the three types of manufacturing processes are distinguished from each other, a semiconductor A thermoelectric conversion module of type, integrated circuit type or thin film type. Furthermore, a panel manufactured by connecting a plurality of thermoelectric conversion assembly modules by the above three types of manufacturing processes is referred to as a thermoelectric conversion panel, and when the thermoelectric conversion panels by the three types of manufacturing processes are distinguished from each other, a semiconductor A thermoelectric conversion panel of type, integrated circuit type or thin film type.

Further, a sheet manufactured by connecting a plurality of thermoelectric conversion collective panels by the above three types of manufacturing processes is referred to as a thermoelectric conversion sheet, and when the thermoelectric conversion sheets by the three types of manufacturing processes are distinguished from each other, a semiconductor A thermoelectric conversion sheet of a type, an integrated circuit type or a thin film type.
The integrated circuit process is a process using, for example, an ion implantation method, photolithography, sputtering, vapor deposition, or the like. In the thin film process, the thickness is reduced by using PVD, VCD, vacuum vapor deposition, plasma etching, sputtering, or the like. be able to.

  The inventor (applicant) invented a thermoelectric conversion device using the Seebeck effect and an energy conversion system using the Seebeck effect and a method of manufacturing an integrated parallel Peltier Seebeck element chip, and has already been granted a patent (patent) (See references 1, 2, 3, 4)

  Generally, the thermoelectric conversion element used in thermoelectric conversion effect equipment is a conventional thermoelectric conversion element with a distance of about 5 mm between the high temperature side and the low temperature side, so it does not contribute to the thermoelectric conversion effect from the high temperature side to the low temperature side. There is a disadvantage that the heat flow loss to the device is large and the thermoelectric conversion efficiency of the entire device can be kept low. In order to reduce the disadvantages of the conventional type, in the inventions described in Patent Documents 1, 2, 3, and 4, the distance between the high temperature side and the low temperature side of the thermoelectric conversion element is set to a length as required. By adopting a structure, a technique for reducing the heat flow loss from the high temperature side to the low temperature side and increasing the thermoelectric conversion efficiency compared with the conventional thermoelectric conversion element was provided.

Japanese Patent No. 4253471 Japanese Patent No. 4261890 Chinese Patent No.ZL200380105263.9 Japanese Patent No. 4141415

  However, the experiment of demonstrating the theory and the theory of the Seebeck coefficient amplification effect that amplifies the value of the Seebeck coefficient of a single thermoelectric conversion material by connecting the two thermoelectric conversion materials with a conductive material such as a metal having excellent conductivity. Since there was no result, in the inventions described in Patent Documents 1, 2, 3, and 4, there was a problem that the improvement in thermoelectric conversion efficiency had an upper limit determined by the thermoelectric conversion material.

  In the thermoelectric conversion systems in the above-mentioned Patent Documents 1, 2, 3, and 4, the output in thermoelectric conversion proportional to the square of the Seebeck coefficient is still small, and the degree of improvement is limited. For this reason, in order to promote the practical use and spread of energy use by thermoelectric conversion, it is required to develop a new configuration that dramatically increases the output by increasing the Seebeck coefficient.

The present invention has been made to solve the above problems. That is, the present inventor (applicant) theoretically analyzes the experimental results using the above-mentioned Patent Document 2 to find out the effect of amplifying the Seebeck coefficient, and constructs and proves the theory of the Seebeck coefficient amplification effect. It was confirmed by theory that the theory was correct. The object of the present invention is to improve the function of the thermoelectric conversion system by increasing the efficiency of mutual conversion between heat flow power and power by the Seebeck coefficient amplification effect based on the theory and the results of the proof experiment, and a new structure that can be easily manufactured. Multi-connected Seebeck coefficient amplification thermoelectric conversion element, Multi-connection Seebeck coefficient amplification thermoelectric conversion unit, Multi-connection Seebeck coefficient amplification thermoelectric conversion unit, Multi-connection Seebeck coefficient amplification thermoelectric conversion module, Multi-connection Seebeck coefficient amplification thermoelectric conversion panel, Multi-connection Seebeck coefficient amplification thermoelectric conversion panel An object is to provide a coefficient amplification thermoelectric conversion sheet and a multi-connected Seebeck coefficient amplification thermoelectric conversion system.
Still another object of the present invention is to provide a method for producing the multi-connected Seebeck coefficient amplification thermoelectric conversion assembly unit, the multi-connection Seebeck coefficient amplification thermoelectric conversion module, the multi-connection Seebeck coefficient amplification thermoelectric conversion panel, and the multi-connection Seebeck coefficient amplification thermoelectric conversion sheet. To do.

  In order to solve the above-described problem, the structure of the multi-connection Seebeck coefficient amplification thermoelectric conversion element according to the first invention includes three or more conductive members having a positive or negative Seebeck coefficient and the conductive member having the same sign Seebeck coefficient. They are electrically connected in series with a conductive connecting member and have a connection form in which both ends become the conductive member, and the value of the Seebeck coefficient of the conductive member alone is amplified by the connection form. In general, a conductive member having a positive Seebeck coefficient is called a p-type conductive member, and a conductive member having a negative Seebeck coefficient is called an n-type conductive member. The n-type conductive member is a conductive member having a negative Seebeck coefficient.

That is, in the present invention, three or more identical p-type or n-type conductive members are continuously connected in series by a conductive connecting member.
As a result, electrons can move to the adjacent conductive member via the conductive connecting member, and the number of electrons moving due to thermal diffusion and concentration diffusion in each conductive member may move more than in the case of the conductive member alone. It becomes possible. For this reason, it is possible to amplify the value of the Seebeck coefficient by increasing the bias of charge generated on the low temperature side and the high temperature side as compared with the conventional case.

In addition, the structure of the Seebeck coefficient amplification thermoelectric conversion unit according to the second invention is such that a pair of the above-mentioned p-type multiple connection Seebeck coefficient amplification thermoelectric conversion element and a multiple connection Seebeck coefficient amplification thermoelectric conversion element having a negative Seebeck coefficient is joined. It joins by a member, and a pair of output ends are connected by the joining conductive member to the opposing part of the said connection conductive member, It is characterized by the above-mentioned.
Thereby, greater conversion efficiency can be obtained with respect to mutual conversion between heat flow power and power.

Moreover, the structure of the multi-connection Seebeck coefficient amplification thermoelectric conversion assembly unit according to the third invention is such that the output ends of the plurality of Seebeck coefficient amplification thermoelectric conversion units are connected in series, connected in parallel, or connected in series by a connecting conductive member. A connection and a parallel connection are mixed and connected, and a multi-connected Seebeck coefficient amplification thermoelectric conversion collective unit is joined in a state of being electrically insulated from each other, and one or more output ends are connected by the connection conductive member.
As a result, a larger heat flow power transfer amount and power output by thermoelectric conversion can be obtained.

Moreover, the structure of the multi-connected Seebeck coefficient amplification thermoelectric conversion module according to the fourth invention is such that the output ends of the plurality of multiple connection Seebeck coefficient amplification thermoelectric conversion collective units are electrically connected in series or parallel, or in series and parallel. It is configured by hybrid connection.
Similarly, in the structure of the multi-connected Seebeck coefficient amplification thermoelectric conversion panel according to the fifth invention, the multi-connection Seebeck coefficient amplification thermoelectric conversion modules are electrically connected in series or in parallel, or in series and parallel. The structure of the multi-connection Seebeck coefficient amplification thermoelectric conversion sheet according to the sixth invention is such that the plurality of multiple connection Seebeck coefficient amplification thermoelectric conversion panels are electrically connected in series or parallel, or in series and parallel. It is configured by mixing and further connecting.
In this way, multiple connected Seebeck coefficient amplification thermoelectric conversion units, multiple connection Seebeck coefficient amplification thermoelectric conversion collective units, multiple connection Seebeck coefficient amplification thermoelectric conversion modules, multiple connection Seebeck coefficient amplification thermoelectric conversion panels, multiple connection Seebeck coefficient amplification thermoelectric conversion The larger the size of the sheet connected, the larger the amount of heat flow power transferred and the power output by thermoelectric conversion.

  According to the present invention, the electric charge bias caused by the thermal diffusion and concentration diffusion of electrons due to the temperature gradient in the conductive member due to the temperature difference applied between the high temperature side and the low temperature side is made larger than in the case where the conventional conductive member is used alone. be able to. For this reason, the effect of amplifying the Seebeck coefficient occurs, and the potential difference between the high temperature side and the low temperature side for the same temperature difference becomes larger than before, so it is possible to increase the amount of heat flow power transferred and the power output by thermoelectric conversion It becomes.

It is a schematic block diagram which shows the structure of many connection Seebeck coefficient amplification thermoelectric conversion units and the conventional thermoelectric conversion unit. A is a 3-connected Seebeck coefficient amplification thermoelectric conversion unit according to the first embodiment of the present invention, and B is a conventional thermoelectric conversion unit. It is an energy band figure of the conventional thermoelectric conversion element. A is a case where a p-type semiconductor is used, and B is a case where an n-type semiconductor is used. It is an energy band figure of the p-type 3 connection Seebeck coefficient amplification thermoelectric conversion element concerning a 1st embodiment of the present invention. It is an energy band figure of the n-type 3 connection Seebeck coefficient amplification thermoelectric conversion element concerning a 1st embodiment of the present invention. It is a schematic block diagram which shows the structure of the thermoelectric conversion unit used for experiment. A is a conventional thermoelectric conversion unit, and B is a 2-connected Seebeck coefficient amplification thermoelectric conversion unit. It is explanatory drawing which shows the relationship between the Seebeck coefficient of the conventional thermoelectric conversion unit, and the length of the electroconductive connection member of a 2 connection Seebeck coefficient amplification thermoelectric conversion unit, and a Seebeck coefficient. A is explanatory drawing which shows the electric current which the 4 connection Seebeck coefficient amplification thermoelectric conversion element which connected the four p-type electroconductive members in series produces. B is explanatory drawing which shows the electric current which a 4 connection Seebeck coefficient amplification thermoelectric conversion element which connected the four n-type electroconductive members in series produces. It is explanatory drawing which shows the voltage and electric current which a 4 connection Seebeck coefficient amplification thermoelectric conversion unit which connected the conductive member 4 each in series produces It is a schematic block diagram of the 3 connection Seebeck coefficient amplification thermoelectric conversion collective unit which concerns on the 1st Example of this invention. A is a top view, B is an X1-X′1 cross-sectional view, C is a Y-Y ′ cross-sectional view, and D is an X2-X′2 cross-sectional view. A 'is a schematic configuration diagram of an output terminal portion of a top view of a three-connected Seebeck coefficient amplification thermoelectric conversion collective unit according to a modification of the first embodiment. It is explanatory drawing which shows the manufacturing method of the 3 connection Seebeck coefficient amplification thermoelectric conversion aggregate | assembly unit which concerns on the 1st Embodiment of this invention. It is a schematic block diagram of the 3 connection Seebeck coefficient amplification electric conversion aggregate | assembly unit which concerns on the 2nd Embodiment of this invention. A is a top view, B is a cross-sectional view along X-X ′, and C is a cross-sectional view along Y-Y ′. A 'is a schematic block diagram of an output terminal portion of a top view of a three-connected Seebeck coefficient amplification thermoelectric conversion collective unit according to a modification of the second embodiment. It is a schematic block diagram of the 3 connection Seebeck coefficient amplification thermoelectric conversion assembly unit which concerns on the 3rd Embodiment of this invention. A is a top view, B is a cross-sectional view along X-X ′, and C is a cross-sectional view along Y-Y ′. A 'is a schematic block diagram of an output terminal portion of a top view of a three-connected Seebeck coefficient amplification thermoelectric conversion collective unit according to a modification of the third embodiment. It is a top view showing the structure of the multiple connection Seebeck coefficient amplification thermoelectric conversion module which concerns on the example of 4th Embodiment of this invention. It is a top view showing the structure of the multiple connection Seebeck coefficient amplification thermoelectric conversion panel which concerns on the 5th example of embodiment of this invention. It is a top view showing the structure of the multiple connection Seebeck coefficient amplification thermoelectric conversion sheet | seat which concerns on the 6th Example of this invention.

Hereinafter, the theory of the Seebeck coefficient amplification effect which is the basis of the present invention and the results of verification experiments for demonstrating the theory, and the multi-connected Seebeck coefficient amplification thermoelectric conversion assembly unit and the manufacturing method thereof according to the embodiment of the present invention will be described. However, the present invention is not limited to the following examples. The following first to third embodiments, modified examples thereof, and fourth to sixth embodiments are examples relating to power supply using high-efficiency thermoelectric conversion according to the present invention, and are described in the seventh embodiment. An example is an example of high efficiency thermal energy transfer using high efficiency thermoelectric conversion according to the present invention. The description will be made in the following order.
1. 1. Seebeck coefficient amplification effect theory and verification test results to verify the theory First embodiment (an example in which three connected Seebeck coefficient amplification thermoelectric conversion aggregate units are connected in series) and a first modification (an example in which a plurality of output terminal pairs are formed)
3. 3. Manufacturing method of three-linked thermoelectric conversion collective unit 100 in the first embodiment Second embodiment (example configured by parallel connection of three-connected Seebeck coefficient amplification thermoelectric conversion collective units) and second modification (example of forming a plurality of pairs of output terminals)
5. Third embodiment (example in which serial connection and parallel connection of three connected Seebeck coefficient amplification thermoelectric conversion aggregate units are mixed) and third modification (example in which a plurality of pairs of output terminals are formed)
6). Fourth embodiment (example of configuring a multi-connected Seebeck coefficient amplification thermoelectric conversion module)
7). Fifth embodiment (example of configuring a multi-connected Seebeck coefficient amplification thermoelectric conversion panel)
8). Sixth Embodiment (Example of configuring a multi-connected Seebeck coefficient amplification thermoelectric conversion sheet)
9. Seventh embodiment (example of use as a thermal energy transfer system)

1. Theory of the Seebeck coefficient amplification effect and the results of verification experiments to verify the theory The physical Seebeck coefficient amplification effect theory will be described. In the semiconductor, electrons in the valence band are excited to the acceptor level by thermal excitation, and positively charged holes are formed in the valence band. The donor level electrons are excited to the conduction band level and become free electrons. When there is no temperature gradient, holes and free electrons have a uniform density distribution and are in an electrically neutral state. In general, since the thermal conductivity of a joining conductive member using a metal is smaller than that of a semiconductor, a temperature gradient due to a temperature difference is mainly generated in the semiconductor, and in the metal or semiconductor due to thermal diffusion and concentration diffusion accompanying the temperature gradient. The moving particles are electrons.

2A and 2B are schematic diagrams of energy bands of the left p-type thermoelectric conversion element and the right n-type thermoelectric conversion element of the conventional thermoelectric conversion unit 70b using the conductive member shown in FIG. 1B alone. In the figure, regions A2 and A5 are conductive members, and regions indicated by A1, A3, A4, and A6 represent bonded conductive members. In the figure, the right side is a high temperature and the left side is a low temperature. The temperature of the cold side of the p-type thermoelectric conversion elements at _{T PL,} when indicating the temperature of the hot side _{T PH,} the temperature difference [Delta] T _PC is expressed as ΔT _PC = _T PH _{-T PL.} temperature _{T nL} of the low temperature side of the n-type thermoelectric conversion element, indicating the temperature of the hot side _{T nH,} the temperature difference [Delta] T _nC is expressed as ΔT _nC = _T nH _{-T nL.}
Further, in FIGS. 2A and 2B, the line E _F is the Fermi level, the line Ec is the conduction band level, the line Ev is the valence band level, the line E _A is the acceptor level, the line E _D a donor level The same applies to the following drawings.

2A and 2B in which there is a temperature gradient in the conductive member, electrons move in the directions indicated by arrows e1, e2, and e3 in the regions A3, A2, and A1 of the p-type conductive member due to thermal diffusion and concentration diffusion, respectively. In the A6, A5, and A4 regions of the mold conductive member, electrons move in the directions indicated by arrows e4, e5, and e6, respectively. As the electrons move, holes move to the left in the A2 region of the p-type conductive member and positive charges increase, and in the A5 region of the n-type conductive member, free electrons move to the left and negative charges increase. . In this way, as a result of the occurrence of charge bias in the electrically neutral conductive member when there is no temperature gradient, the p-type conductive member has a potential gradient in which the low temperature side is positive and the high temperature side is negative. hole deviation distribution such that the driving force are balanced with each other to the left of the hole with the hole in the joining pullback force and thermal diffusion to the right by the electric field E ₁ with a gradient is determined. Similarly, the potential gradient cold side hot side becomes positive minus occurs in n-type conductive member, the electric field E ₂ due to the potential gradient to free electrons left due to pullback force and thermal diffusion applied to the right to free electrons The free electron bias distribution is determined so that the driving forces are balanced with each other. Since the electric field in the A1, A3, A4, and A6 regions of the bonding conductive member using a thin, thin metal having a low electric resistance is negligibly small compared to the electric fields in the A2 and A5 regions of the conductive member, In the steady state according to Gauss's law, the p-type conductive member has a negative high temperature side and the low temperature side has a positive potential as shown in FIG. 2A, and the n type conductive member has a high temperature side as shown in FIG. 2B. Positive and low temperature side has negative potential.

  As a result of the potential gradient generated due to such a bias charge distribution of holes, in the p-type conductive member, the Fermi level in the region A2 moves from the Fermi level in the region A3 on the high temperature side toward the Fermi level in the region A1 on the low temperature side. A level gradient occurs. Similarly, in the n-type conductive member, a Fermi level gradient in the region A5 is generated from the Fermi level in the high temperature region A6 toward the Fermi level in the low temperature region A4. The amount of integration in the length direction of this potential gradient is the magnitude of the voltage output defined by the product of the temperature difference based on the thermoelectric conversion effect and the Seebeck coefficient. The value of the Seebeck coefficient is a value obtained by dividing the voltage output by the temperature difference. In a conventional thermoelectric conversion element that uses a thermoelectric conversion material alone, the movement of electrons caused by thermal diffusion and concentration diffusion mainly occurs only in the A2 and A5 regions, and ends in the junction conductive members A1 and A4 regions.

On the other hand, the schematic diagram of the energy band in the case of the left p-type 3-coupled thermoelectric conversion element and the right-side n-type 3-coupled thermoelectric conversion element of the 3-coupled thermoelectric conversion unit 70a according to the embodiment shown in FIG. 1A. Is as shown in FIG. 3 and FIG. The regions indicated by A7 and A13 in FIG. 3 are bonding conductive members, the regions indicated by A8, A10, and A12 are p-type conductive members, and the regions indicated by A9 and A11 are conductive connecting members. Further, on the low temperature side of the A7 region temperature _{T PL,} A13 region is the case of the high-temperature side of the temperature _{T PH.} Temperature difference [Delta] T _PLn the high temperature side and low temperature side is represented by ΔT _PLn = _T PH _{-T PL.}

  In FIG. 3 where there is a temperature gradient in the p-type conductive member, the movement of electrons due to thermal diffusion and concentration diffusion in the directions indicated by arrows e7, e8 and e9 in the regions A13, A12 and A11, This is the same as that shown in FIG. However, since the p-type conductive member A10 region is connected to the conductive connecting member A11 region, electrons that flow into the A11 region due to thermal diffusion and concentration diffusion move one after another in a ball-type manner. Then, the electrons are pushed out in the direction indicated by e10 to flow electrons into the A10 region, so that the movement of electrons due to thermal diffusion and concentration diffusion continues to the A8 region through the A10 region and further through the conductive connecting member A9 region. That is, in the conventional thermoelectric conversion element, the number and distance of movement of electrons due to thermal diffusion and concentration diffusion are limited only in the single conductive member A2 region of FIG. 2A corresponding to the A12 region of FIG. In the p-type three-coupled thermoelectric conversion element, the number and distance of movement of electrons due to thermal diffusion and concentration diffusion continue to the A12, A10, and A8 regions via the two conductive coupling members A11 and A9 in FIG. To increase. The number and distance of movement of the electrons are further increased if the number of conductive members connected by the conductive connecting member is increased.

  As described above, in the p-type three-coupled thermoelectric conversion element of FIG. 3, the number of moving electrons and the moving distance increase. As a result, the diffusion of holes accompanying the movement of electrons also increases, and the bias of charge increases. , A10, and A8 regions, the amount of integration in the lengthwise direction of the potential gradient increases, and the magnitude of the voltage output also increases. As a result of the increase in the value of the Seebeck coefficient obtained by dividing the voltage output by the temperature difference, the Seebeck coefficient is amplified. The amount of amplification of the Seebeck coefficient is further increased if the number of conductive members connected by the conductive connecting member is increased.

  Similarly, also in the n-type three-coupled thermoelectric conversion element of FIG. 4, the movement of electrons due to thermal diffusion and concentration diffusion in the directions indicated by arrows e16, e17, and e18 in the A19, A17, and A15 regions is as described above. This is the same as the case of the conventional type shown in FIG. 2B in which the conductive member is used alone. However, since the n-type conductive member A17 region is connected to the conductive connecting member A18 region, electrons flowing into the A18 region due to thermal diffusion and concentration diffusion move one after another free electrons in the A18 region. Then, the electrons are pushed out in the direction indicated by the arrow e20 to flow electrons into the A17 region, whereby the movement of electrons due to thermal diffusion and concentration diffusion continues to the A15 region through the A17 region and further through the conductive connecting member A16 region. In other words, in the conventional thermoelectric conversion element, the number and distance of movement of electrons due to thermal diffusion and concentration diffusion are limited only in the single conductive member A5 region of FIG. 2B corresponding to the A19 region of FIG. In the n-type three-coupled thermoelectric conversion element, the number and distance of movement of electrons due to thermal diffusion and concentration diffusion continue to the A19, A17, and A15 regions via the two conductive coupling members A18 region and A16 region of FIG. To increase.

  As described above, also in the n-type three-coupled thermoelectric conversion element, the number of moving electrons and the moving distance increase. As a result, the diffusion of free electrons also increases and the bias of charge increases, and each of the conductive member A19, A17, A15 regions. The amount of integration in the length direction of the potential gradient increases, and the magnitude of the voltage output also increases. As a result of the increase in the value of the Seebeck coefficient obtained by dividing the voltage output by the temperature difference, the Seebeck coefficient is amplified. The amount of amplification of the Seebeck coefficient is further increased if the number of conductive members connected by the conductive connecting member is increased. The above is the explanation of the theory of the new physical Seebeck coefficient amplification effect.

Next, the result of the verification experiment for verifying the theory of the physical Seebeck coefficient amplification effect will be described with reference to FIGS.
FIG. 5 shows the configuration of the thermoelectric conversion element used in the experiment. 5A and 5B are a conventional thermoelectric conversion unit that uses a single conductive member cut out from the same rod and a two-coupled thermoelectric conversion unit according to the present invention. Each of the conventional thermoelectric conversion unit shown in FIG. 5A and FIG. 5B and the two linked thermoelectric conversion units according to the present invention were connected in series to create a thermoelectric conversion collective unit.
In 70d of FIG. 5A, a p-type and n-type BiTe conductive member 1d and a conductive member 2d having a diameter of 1.8 mm and a thickness of 1.5 mm are joined by a copper joined conductive member 4, and the joined conductive member 4 is an insulating film. 7 is fixed to the Al substrate 6. In 70e in FIG. 5B, the conductive members 1d and 1e and 2d and 2e in FIG. 5A are connected and connected by copper conductive connecting members 4e and 3e each having a diameter of 1.5 mm, and the other configurations are the same as in FIG. 5A. It is. In 70e of FIG. 5B, the 2-connection thermoelectric conversion unit in which the length L of the conductive connection members 4e and 3e is 0.2 cm, 2.0 cm, 4.0 cm, and 10 cm was used in the demonstration experiment. The internal resistances of the thermoelectric conversion collective units of FIGS. 5A and 5B are 3.0Ω and 6.0Ω, respectively.

In the experiments of FIGS. 5A and 5B, the temperature of each part shown in FIGS. 5A and 5B is fixed in an environment of 17 ° C. by fixing the high temperature side to 90 degrees and the low temperature side to 30 degrees using an automatic temperature controller. And the open circuit voltage V was measured. By accurately measuring the temperature of each part and the open circuit voltage V, the Seebeck coefficient can be calculated more accurately.
The value of the Seebeck coefficient α of the single conductive member obtained by averaging the Seebeck coefficients of the p-type and n-type conductive members constituting the thermoelectric conversion unit is the temperature difference ΔT applied only to the open voltage V and the conductive member portion, and the number of thermoelectric conversion units. Using m = 127, it can be calculated by the definition formula of the following formula 1.

α = V / 2mΔT (1)

Measurement data and calculation data are obtained with an accuracy of up to three digits. The Seebeck voltage generated by the copper conductive connecting member connecting the p-type and n-type conductive members is generated in opposite directions in the current path and cancels each other, and the thermal conductivity of the p-type and n-type conductive members Is generally known to be approximately equal.

  FIG. 6 shows the results of the demonstration experiment obtained using each measured value and Equation 1. The vertical axis in the figure is the Seebeck coefficient value, and the horizontal axis is the length L of the conductive connecting members 4e and 3e. The experimental data from the conventional thermoelectric conversion collective unit of FIG. 5A and the two-coupled thermoelectric conversion collective unit of FIG. 5B are divided into white squares of symbol f and white circles of symbol e, respectively, with experimental error ranges (error bars) in the figure. It is shown separately. The conventional thermoelectric conversion collective unit in FIG. 5A corresponds to the case of L = 0 cm, and the experimental data by this conventional thermoelectric conversion collective unit is data at the position of L = 0 cm in the figure.

The following two facts can be seen from the experimental data in FIG. 1) The value of the Seebeck coefficient of the conductive member of the two-coupled thermoelectric conversion collective unit in FIG. 5B does not depend on the length L of the conductive connecting members 4e and 3e within the experimental error range. 2) The value of the Seebeck coefficient of the conductive member of the two-coupled thermoelectric conversion assembly unit in FIG. 5B is amplified about 1.2 times larger than the value of the Seebeck coefficient of the conductive member of the conventional thermoelectric conversion assembly unit in FIG. 5A.
The experimental fact 1) agrees with the theory that the physical Seebeck coefficient amplification effect is not dependent on the length L of the conductive connecting member. The experimental fact 2) is consistent with the above theory that leads to the effect that the Seebeck coefficient of the conductive member is amplified by the introduction of the conductive connecting member.
As described above, it can be said that the theory of the physical Seebeck coefficient amplification effect is correct based on the experimental results of the verification experiment.

To date, there is no specific theory that the Seebeck coefficient amplification effect can be obtained by connecting two conductive members with a conductive material such as a metal having excellent conductivity. The degree of improvement in output voltage and power by the thermoelectric conversion systems in 1, 2, 3, and 4 was small and limited.
However, the present inventor theoretically analyzes the experimental results using the above-mentioned Patent Document 2 to find out the effect of amplifying the Seebeck coefficient, constructs the theory of the Seebeck coefficient amplification effect, and conducts the proof experiment to prove it. Has been confirmed to be correct. Further, as mentioned in the theory of the physical Seebeck coefficient amplification effect, the amount of amplification of the Seebeck coefficient can be further increased by increasing the number of conductive members connected by the conductive connection member.

Hereinafter, the configuration of the three-connected Seebeck coefficient amplification thermoelectric conversion unit in the first embodiment of the present invention will be described. In the following, the thermoelectric conversion element is the smallest element for thermoelectric conversion, the element is connected by connecting the conductive member of Seebeck coefficient with the same sign with the conductive connecting member, and a pair of thermoelectric conversion elements with positive and negative Seebeck coefficient is joined Elements joined by conductive members are abbreviated as thermoelectric conversion units, and units connected by conductive connecting members are abbreviated as connected thermoelectric conversion units.
1A and 1B are schematic configuration diagrams showing a three-connected Seebeck coefficient amplification thermoelectric conversion unit 70a and a conventional thermoelectric conversion unit 70b according to the first embodiment of the present invention.

  In the connected thermoelectric conversion unit 70a in the present embodiment, the p-type conductive members 1a and 1c having three positive Seebeck coefficients on the left side and 1c and 1b are electrically connected to each other by the conductive connection members 3a and 3c. Three connected Seebeck coefficient amplifying thermoelectric conversion elements connected in series, and the right side n-type conductive members 2a and 2c having two negative Seebeck coefficients and 2c and 2b are electrically connected by conductive connecting members 3b and 3d, respectively. A pair of three connected thermoelectric conversion elements connected in series to each other is joined by an upper joining conductive member 4, and a pair of output ends are connected by a joining conductive member 4 below the facing portion.

On the other hand, in the conventional thermoelectric conversion unit 70b of FIG. 1B using a single thermoelectric conversion material, a pair of the p-type conductive member 1a and the n-type conductive member 2a is joined by the upper joined conductive member 4, and the lower part of the opposite portion is joined. A pair of output ends are connected by the bonding conductive member 4.
In the present embodiment, the Seebeck coefficient can be increased by utilizing the Seebeck coefficient amplification effect generated by connecting the three conductive members having the same reference Seebeck coefficient by the conductive connecting member, and the temperature difference between the upper and lower sides can be increased. The output voltage proportional to the Seebeck coefficient can be made higher than that of the conventional thermoelectric conversion unit of FIG. 1B.
Further, the output can be increased as the number of conductive members having the same reference Seebeck coefficient is increased.

In FIG. 7A, p-type 4-connected thermoelectric conversion elements are formed by connecting four p-type conductive members 1a, 1c, 1e, 1b by three conductive connection members 3a, 3c, 3e, respectively, on the high temperature side and the low temperature side. An example in which a load circuit is connected through a bonding conductive member 4 such as copper installed as an electrode is shown. As described above with reference to FIG. 3, in the case of the p-type conductive member, the positive charge is biased toward the low temperature side, so the Seebeck electromotive voltage Vs is generated from the high temperature side to the low temperature side, and the low temperature side to the high temperature side through the load circuit 18a. Current flows into the. Due to this current, heat power flows in at the boundary surface between the bonding conductive member and the p-type conductive member due to the endothermic Peltier effect on the high temperature side, and on the low temperature side due to the Peltier effect of heat generation due to the reverse current direction at the boundary surface. Leaks. The difference between the inflow and outflow of this thermal power is equal to the power consumed in the circuit, and the energy conservation law is established.
Similarly, in FIG. 7B in which an n-type 4-coupled thermoelectric conversion element in which four n-type conductive members are coupled by three conductive coupling members is connected to a load circuit via the bonding conductive member 4, a p-type 4-coupled thermoelectric element is connected. A circuit current flows due to the Seebeck electromotive voltage Vs in the opposite direction to that of the conversion element, and the energy conservation law is established by equaling the difference between the inflow and outflow of thermal power and the consumed power.

FIG. 8 shows an example in which a load circuit is connected to a 4-coupled thermoelectric conversion unit in which the high-temperature side of FIGS. 7A and 7B is connected by a bonding conductive member 4. In FIG. 8, by the connection in which the Seebeck electromotive voltages generated in FIGS. 7A and 7B are added, the Seebeck electromotive voltage in FIG. 8 becomes 2 Vs and a circuit current flows. The difference between the inflow and outflow of thermal power is doubled, the power that can be consumed in the circuit is doubled, and the energy conservation law is established.
Further, five or more conductive members may be connected by a conductive connecting member to constitute a five-linked thermoelectric conversion unit, and by further connecting these, a thermoelectric conversion assembly unit and a linked thermothermoelectric conversion module are formed. May be.
In addition, when a plurality of conductive members are connected by a conductive connecting member in this way, it is possible that the conductive members in the same thermoelectric conversion element have the same Seebeck coefficient with the same positive / negative sign. It is necessary to realize. Moreover, although the electrical conductivity of the electroconductive connection member which connects each electroconductive member is large and the density of a free electron is high, the sign of a Seebeck coefficient may be the same and may differ.

2. First Embodiment and First Modification Next, a configuration diagram of the three-coupled thermoelectric conversion collective unit 100 in FIG. 9 in the first embodiment of the present invention and the modification of the first embodiment will be described. To do.
In all of the following first embodiment and first modification, second embodiment and second modification, third embodiment and third modification, there are many. When there is no damage such as partial disconnection in the connected thermoelectric conversion collective unit, the power supplied to the load circuit is set so as to perform impedance matching (maximum power supply to the load circuit known by electric circuit theory). In comparison, it has been found that the power supplied by all embodiments is equal to each other. Further, in all the embodiments, in a multi-coupled thermoelectric conversion collective unit in which three or more identical p-type or n-type conductive members are connected by a conductive connecting member, the supply can be performed by increasing the number of conductive members to be connected. It is possible to further increase the power.

  FIG. 9 of the first embodiment of the present invention is configured to connect the output ends of a plurality of three-coupled thermoelectric conversion units 70a of FIG. 9A is a top view of the three-coupled thermoelectric conversion assembly unit 100 according to the present embodiment as viewed from above, FIG. 9B is a cross-sectional view taken along line X1-X′1 of FIG. 9A, and FIG. 9C is a cross-sectional view taken along line YY ′ of FIG. FIG. 9D is a cross-sectional view taken along line X2-X′2 of FIG. 9A. The three-connected thermoelectric conversion collective unit 100 includes a first insulating substrate 5a in which a plurality of p-type conductive members 1a (A1 region in FIG. 9) and n-type conductive members 2a (B1 region in FIG. 9) are fixed. And a second insulating substrate 5b to which a plurality of p-type conductive members 1b (region A2 in FIG. 9) and n-type conductive members 2b (region B2 in FIG. 9) are fixed.

9B, 9C, and 9D, the three p-type conductive members 1a and 1c (region A3 in FIG. 9) and the portions 1c and 1b are electrically connected to the conductive connecting member 3a (region C1 in FIG. 9). And 3c (region C3 in FIG. 9), p-type three-coupled thermoelectric conversion elements electrically connected in series, three n-type conductive members 2a and 2c (region B3 in FIG. 9), and 2c and 2b Insulating substrate 5a in which a plurality of n-type three-coupled thermoelectric conversion elements, each of which is electrically coupled and connected by conductive coupling member 3b (region C2 in FIG. 9) and 3d (region C4 in FIG. 9), are fixed. And an insulating substrate 5b.
Moreover, the joining conductive member 4 which electrically joins the output ends of a some 3 connection thermoelectric conversion unit, and the output terminals 61 and 62 of the generated voltage output are also included.

  FIG. 9A ′ of the modified example of the first embodiment is a diagram corresponding to the pair of output terminals 61 and 62 in FIG. 9A to avoid duplication, and the three-coupled thermoelectric conversion collective unit in FIG. FIG. 5 shows an embodiment in which the voltage output generated is divided into two and the generated voltage output is taken out from two pairs of output terminals 63, 64 and 65, 66. This output terminal may be three pairs, and even when a disconnection failure of the joint due to stress or the like occurs in a part of the plurality of connected thermoelectric conversion collective units by using a plurality of output terminal pairs, the disconnection failure It is possible to supply the output voltage to the outside from the output terminal pair in a region where no is included. By using a plurality of output terminal pairs, it is possible to improve the reliability as a product of a plurality of connected thermoelectric conversion collective units.

3. Method for Manufacturing Three-Linked Thermoelectric Conversion Assembly Unit in First Embodiment Example Next, an example of a method for manufacturing the three-connection thermoelectric conversion assembly unit 100 in the first embodiment example of the present invention will be described with reference to FIG. Here, an example of manufacturing by a method that can be classified into the above-described integrated circuit process and thin film process will be given.
Similarly to the manufacturing method of the first embodiment described below, the first embodiment is modified, the second embodiment and the second modification, the third embodiment and the third modification. All of the similar embodiments including examples can be manufactured by a thin film process, an integrated circuit process, and a semiconductor type process from the formation of a silicon wafer to the completion of a thermoelectric conversion assembly unit, and are produced collectively. be able to.

First, as shown in FIG. 10A, an amorphous silicon wafer is formed on a very thin heat-resistant plastic substrate 21 by using a vapor deposition method, a sputtering method, a plasma CVD method (Chemical Vapor Development), or the like. This amorphous silicon wafer is formed as a first silicon layer 20a made of amorphous silicon (amorphous silicon) having a uniform thickness of several micrometers to five millimeters or tens of millimeters depending on the application.
For example, in the plasma CVD method, silane (SiH ₄ ) and silane disilane (SiH ₆ ) as source gases are decomposed by glow discharge, an amorphous silicon layer is grown on the substrate, and the uniform thickness as described above is obtained. Create an amorphous silicon wafer.

  Alternatively, the amorphous silicon layer is irradiated with a CW (Continuous Wave) excimer laser (wavelength 308 nm) and annealed (thermal annealing), or the entire wafer is put into a thermoelectric furnace and annealed, Polysilicon (polycrystalline silicon) wafer with much higher carrier mobility such as electrons and holes than amorphous silicon. Alternatively, a single crystal silicon wafer is formed by slicing an ingot obtained by crystallizing silicon in a cylindrical shape. (Hereinafter, any of such amorphous silicon substrate, polysilicon substrate, and single crystal silicon substrate is abbreviated as “wafer”.)

  Photoresist is thinly applied to the wafer surface thus prepared by a coating machine (not shown), and the first conductive member 22a and the first conductive member 22a and the first conductive member 22a are placed on an exposure apparatus (stepper) (not shown) provided above the wafer coated with this photoresist. A mask pattern for exposing the region of the second conductive member 23a is set. That is, in FIG. 10A, the resist is exposed using a mask that transmits ultraviolet light only in the areas A1 and B1. After the exposure for one chip, the exposure stage is sequentially moved in the vertical direction and the horizontal direction to repeat the exposure for each chip, and the entire surface of the wafer is scanned for exposure. At this time, depending on the type of resist, a light heat treatment called baking is performed to promote the reaction of the exposed portion. Here, a case where a negative resist is used as a resist is shown.

  Next, after the mask pattern is transferred to the entire resist surface on the wafer, only the unexposed portion is dissolved in the developer to expose the wafer (development). For this development, for example, strong alkaline TMAH (Tetramethyl ammonium hydroxide) is used, and development is performed by dropping the developer while rotating the wafer with a developing machine (developer).

Next, the entire wafer on which the resist is left is placed in a high-temperature oxidation furnace, and the wafer is transformed into silicon dioxide (SiO ₂ ) using a “thermal oxidation method”. As a result, the portion where the wafer is exposed by development, that is, the portion other than the regions A1 and B1 in FIG. 10A is changed to silicon dioxide (SiO ₂ ).

After the silicon dioxide is formed, the resist remaining on the wafer is removed with a solvent. Then, a resist is applied again on the wafer, and exposure and development are performed. This time, only the region A1 is exposed, and the other portions are covered with the resist.
When this region A1 is a p-type semiconductor, a high-energy ion beam of boron (B: boron) is irradiated to the region A1 on the wafer, for example, by ion implantation. Then, the lattice defects due to the implanted ions are recrystallized by an annealing process to form a P-type semiconductor. Thus, the first conductive member 22a is formed on the region A. When this ion is implanted, an electron shower is applied immediately before the ion reaches the wafer surface so that the positive charge of the ion is neutralized by the electronic charge.

Subsequently, after the formation of the first conductive member 22a, the resist remaining on the wafer is removed, and the resist coating, exposure, and development steps are repeated again. Next, the region B1 shown in FIG. 10A is exposed, and the other portions are covered with the resist.
In the case where the region B1 is an n-type semiconductor, a high energy beam of phosphorus (P), for example, is irradiated using an ion implantation method. Then, the lattice defects caused by the implanted ions are recrystallized by an annealing process to change into an N-type semiconductor. Thereby, the second conductive member 23a is formed in the region B1.

  Next, as shown in FIG. 10B, the first conductive connecting member 24a and the second conductive connecting member 24b are formed on the first conductive member 22a and the second conductive member 23a by a thin film process. First, a positive resist 25 is applied on the wafer, exposed and developed, and only the region of the first conductive member 22a is exposed and the other portions are covered with the positive resist 25. Then, by a screen printing method, a metal paste (made of metal powder such as copper, kala frit, resin, organic solvent) is applied on the exposed first conductive member 22a, and heat treatment is performed. A first conductive connecting member 24a is formed on 22a.

Next, the positive resist 25 was exposed and developed again, and this time, only the region of the second conductive member 23a was exposed, and the other regions were covered with the resist 25 and the first conductive connecting member 24a. State. Then, a metal paste is applied onto the exposed second conductive member 23a by a screen printing method, and heat treatment is performed, thereby forming a second conductive connecting member 24b on the second conductive member 23a.
If the resist is highly durable and highly insulating, the first conductive connecting member 24a and the second conductive connecting member 24b may be used as they are as insulating members for electrical protection. Alternatively, resin or the like can be injected so that the first bonding conductive members 24 are insulated from each other.

  Further, when the baking temperature of the metal paste is high and the resist cannot withstand, the first conductive connecting member is formed on the exposed first conductive member 22a and second conductive member 23a by using a laser CVD method or the like. You may selectively form 24a and the 2nd electroconductive connection member 24b. Further, it may be formed by vapor deposition or sputtering.

Next, as shown in FIG. 10C, on the first bonding conductive member 24a, the second bonding conductive member 24b, and the resist 25, using an evaporation method, a sputtering method, a plasma CVD method, etc., amorphous silicon or this A second silicon layer 20b made of polysilicon obtained by heat-treating amorphous silicon is formed.
Subsequently, a resist is applied onto the silicon layer 20b, exposed and developed, and only the regions A2 and B2 on the first conductive connecting member 24a and the second conductive connecting member 24b are covered with the resist. The other parts are exposed. And this is thrown into an oxidation furnace, and parts other than area | region A2, B2 are changed into silicon dioxide.

Next, a resist is applied on the silicon layer 20b, exposed and developed to expose only the region A2 in the silicon layer 20b, and the other portions are covered with the resist. Then, boron or the like is implanted by the above-described ion implantation method to form the third conductive member 22b in the region A2 of the second silicon layer 20b.
Similarly, only the region B2 in the silicon layer 20b is exposed, the other portions are covered with a resist, and phosphorus or the like is implanted into the region B by ion implantation. Thereby, the fourth conductive member 23b is formed in the region B2 in the silicon layer 20b.

  The third conductive connecting member 24c formed on the third conductive member 22b and the fourth conductive connecting member 24d formed on the fourth conductive member 23b may be made of the same material. May have different Seebeck coefficients.

Similarly, the steps of FIG. 10B and FIG. 10C are repeated, and as shown in FIG. 10D, the adjacent fifth conductive member 22c and the sixth conductive member 23c, and the adjacent first conductive member 22a and the second conductive member. 23 a is connected by a bonding conductive member 27.
First, a resist is applied on the third silicon layer 20c and exposed to expose the pair of the fifth conductive member 22c and the sixth conductive member 23c, and the silicon dioxide region located at the center. The other parts are covered with a resist. Then, by applying (printing) a metal paste (made of silver, copper or the like, powder, frit, resin, or organic solvent) to this exposed region by a screen printing method and heat-treating, the fifth conductive member 22c and the sixth conductive member 23c are connected.
For example, at first, silver paste is used and connected by ohmic contact, and then copper paste printing and heat treatment are repeated. Then, by repeating printing and heat treatment of the copper paste, the adjacent fifth conductive member 22c and sixth conductive member 23c are connected by ohmic contact. Thereby, the thermoelectric conversion unit in which the p-type and n-type thermoelectric conversion units are connected in series is formed.

  On the first silicon layer 20a side, the substrate 21 is first polished with a polishing machine or the like so that the first conductive member 22a and the second conductive member 23a are exposed on the lower surface of the wafer. Then, a resist is applied to this surface, and exposure and development are performed. As a result, the silicon dioxide region 29 on the first silicon layer 20a side, which is located below the silicon dioxide region 28 covered by the bonding conductive member 27 on the second silicon layer 20b side, is covered with the resist. The other parts are exposed.

A second bonding conductive member for connecting the adjacent first conductive member 22a and the second conductive member 23a by applying a metal paste to the exposed region by the same method as described above and performing heat treatment. 27 is formed. Thereby, adjacent thermoelectric conversion units are connected in series. Finally, a thin-film three-coupled thermoelectric conversion assembly unit 100 can be formed by forming an output terminal for outputting the generated electromotive force to an external circuit.
Moreover, it can produce similarly by repeating the process shown to the above-mentioned FIG. 10B and C also in the multiple connection thermoelectric conversion aggregate | assembly unit in the case of connecting four or more conductive members in series by a conductive connection member. .

  Thus, the first embodiment of the present invention is formed consistently using a thin film process and an integrated circuit process. For this reason, it becomes possible to manufacture the thermoelectric conversion aggregate unit 100 as shown in FIG. 9 collectively. Further, in this process, a thin-film thermoelectric conversion assembly unit can be manufactured, so that the mounting space for mounting on an electronic device or the like can be reduced.

In addition, even when the thermoelectric conversion assembly unit is constituted by the thermoelectric conversion units to which four or more conductive members are connected, it is only necessary to repeat the same thin film process and integrated circuit process. It is possible to produce.
Of course, it is also possible to manufacture by the above-mentioned semiconductor type process.

In addition to the examples given here, various other methods can be adopted by using a thin film process, an integrated circuit process, and a semiconductor type process such as a combination of vapor deposition, sputtering, plasma CVD and etching. .
In addition, there is a case where a metal lead wire is used for the conductive connecting member to increase the distance between the first silicon layer 20a and the second silicon layer 20b for the purpose of generating electric power due to a temperature difference between long distances. In such a case, after the metal lead wire is connected to the first silicon layer 20a side, the UV lead is cured with the metal lead wire extended in a direction perpendicular to the surface of the first silicon layer 20a. Cured with or thermosetting resin. Then, the portion of the lead wire protruding from the resin may be cut, and the second silicon layer 20b may be deposited on the resin.
Further, when three or more conductive members are connected in series, they may be similarly connected.

4). Second Embodiment and Second Modification Next, the three-coupled thermoelectric conversion collective unit 300 and the three-coupled thermoelectric conversion of FIG. 11 in the second embodiment of the present invention and the modification of the second embodiment will be described. A configuration diagram of the collective unit 400 will be described.
In the second embodiment of the present invention, a connected thermoelectric conversion assembly unit is formed by connecting the output ends of a plurality of three connected thermoelectric conversion units 70a in FIG. 11A is a top view of the three-coupled thermoelectric conversion assembly unit 300 according to the present embodiment as viewed from above, FIG. 11B is a cross-sectional view taken along line X1-X′1 of FIG. 11A, and FIG. 11C is a cross-sectional view taken along line YY ′ of FIG. is there. 11B and 11C, the three p-type conductive members 1a and 1c (region A3 in FIG. 11) and the portions 1c and 1b are respectively connected to the conductive connecting members 3a (region C1 in FIG. 11) and 3c (FIG. 11B). P-type three-coupled thermoelectric conversion elements electrically connected in series with each other and the three n-type conductive members 2a and 2c (region B3 in FIG. 11) and between each of 2c and 2b. Insulating substrate 5a and insulating substrate 5b in which a plurality of n-type three-coupled thermoelectric conversion elements electrically connected in series between the conductive connecting member 3b (region C2 in FIG. 11) and 3d (region C4 in FIG. 11) are fixed. Including. As shown in FIG. 11A, in the D1 direction, a row of p-type three-coupled thermoelectric conversion elements and a row of n-type three-coupled thermoelectric conversion elements are alternately arranged, and the same p-type or n-type three-connection is arranged in the D2 direction. A thermoelectric conversion element is arranged. The conductive connecting members 3a, 3b, 3c, 3d may be made of the same material or different.

  Further, as shown in FIG. 11C, all of the same p-type or n-type three-connected thermoelectric conversion elements in the rows m1 to m8 arranged in the D2 direction in the insulating member 5b are connected by the bonding conductive member 4b. . Further, as shown in FIG. 11B, adjacent p-type conductive member 1a and n-type conductive member 2a arranged on the insulating member 5a side in D1 direction are connected by bonding conductive member 4a to form a three-linked thermoelectric conversion unit. Is done. The bonding conductive member 4a and the bonding conductive member 4b may be the same material.

That is, in each of the three linked thermoelectric conversion units in the rows L1 to L4, the same p-type or n-type conductive members are joined together by the joined conductive member 4b to be connected in parallel. Therefore, as indicated by the arrows in FIG. 11C, the currents from the three connected thermoelectric conversion units are merged in the bonding conductive member 4b, which corresponds to a state in which a plurality of power supplies are connected in parallel.
In the second embodiment of the present invention shown in FIG. 11A, for example, four rows of thermoelectric conversion units are arranged from row L1 to row L4. The output ends 61 and 62 may be obtained by extending the bonding conductive member 4b arranged in the rows m1 and m8, or a new conductive member may be formed.

Thus, in the second embodiment of the present invention, all the three linked thermoelectric conversion units in the three linked thermoelectric conversion collective unit 300 are connected in parallel. Therefore, even if the bonded conductive member in the three-linked thermoelectric conversion collective unit 300 is partially cut, it is possible to prevent the output from the output terminals 61 and 62 from being completely stopped.
For this reason, according to the second embodiment, it is resistant to bending, impact, etc., and the decrease in power supply is minimized with respect to damage such as partial cutting in the three-coupled thermoelectric conversion collective unit, resulting in high durability It is possible to provide a three-linked thermoelectric conversion collective unit.

  FIG. 11A ′ of a modification of the second embodiment is a diagram corresponding to the pair of output terminals 61 and 62 in FIG. 11A to avoid duplication, and the three-coupled thermoelectric conversion collective unit in FIG. 3 shows a three-linked thermoelectric conversion collective unit 400 which is divided into two parts and is modified so that the generated voltage output is taken out from two pairs of output terminals 601, 602 and 603, 604. This output terminal may be three pairs, and by connecting a plurality of output terminal pairs, all three connected thermoelectric conversion units are connected in parallel, so even if a disconnection failure occurs in the conductive member or the joined conductive member. In addition to preventing the power generation function from being completely stopped, it is possible to supply the output voltage to the outside from the output terminal pair in the region where the disconnection failure is not included. In this way, the three-coupled thermoelectric conversion units connected in parallel are divided into a plurality of D1, and an output terminal pair is attached to each divided portion, and an output voltage is supplied from the plurality of output terminal pairs to the outside. It is possible to further improve the reliability of a multi-coupled thermoelectric conversion assembly unit having a function as a product.

5. Third Embodiment and Third Modification FIG. 12 shows a configuration of the three-coupled thermoelectric conversion assembly unit 500 and the three-connection thermoelectric conversion assembly unit 600 in the third embodiment and the modification of the third embodiment. It is a schematic block diagram which shows a structure. 12A is a top view of the three-coupled thermothermoelectric conversion collective unit 500 viewed from the insulating member 5a side, FIG. 12B is a cross-sectional view taken along the line XX ′ of FIG. 12A, and FIG. 12C is a cross-sectional view taken along the line YY ′ of FIG. 12B and FIG. 12C, the three p-type conductive members 1a and 1c (region A3 in FIG. 12) and the portions 1c and 1b are respectively connected to the conductive connecting members 3a (region C1 in FIG. 12) and 3c (FIG. 12). P-type three-coupled thermoelectric conversion elements electrically connected in series with each other, the three n-type conductive members 2a and 2c (region B3 in FIG. 12), and each of 2c and 2b. Insulating substrate 5a and insulating substrate 5b in which a plurality of n-type three-coupled thermoelectric conversion elements electrically connected in series by the conductive connecting member 3b (region C2 in FIG. 12) and 3d (region C4 in FIG. 12) are fixed Including.

As shown in FIG. 12A, in the direction D1, three-coupled thermoelectric conversion units in which an n-type three-coupled thermoelectric conversion element and a p-type three-coupled thermoelectric conversion element are joined by a joint conductive member 41a are arranged. In the D2 direction, two parallel three-coupled thermoelectric conversion units 71a in which two three-coupled thermoelectric conversion units are connected in parallel by the bonding conductive member 41b on the insulating member 5b side are reversed left and right, from the L1 column to the L4 column. Multiple connections will be made. In FIG. 12A, the bonding conductive member 41a is shown in a small size for convenience of explanation. The output terminals 611 and 612 are formed by extending the bonding conductive members 41b in the rows m1 and m8, or by newly connecting conductive members to the output terminals 611 and 612.
Further, a higher output can be realized by connecting four or more p-type or n-type conductive members in series by a conductive connecting member.

  Thus, in the third embodiment of the present invention, the serial connection and the parallel connection of the three linked thermoelectric conversion units are mixed. That is, since the three-coupled thermoelectric conversion assembly unit 500 also includes parallel connection, the output is completely stopped from the output ends 611 and 612 even if a disconnection occurs in a part of the three-connection thermoelectric conversion assembly unit. Can be prevented. For this reason, the thermoelectric conversion collective unit 500 according to the third embodiment is resistant to bending and impact, minimizes the decrease in power supply against damage such as partial cutting in the unit, and realizes long-term use. it can.

FIG. 12A ′ of a modification of the third embodiment is a view corresponding to the pair of output terminals 611 and 612 in FIG. 12A in order to avoid duplication, and the three-coupled thermoelectric conversion collective unit in FIG. 3 shows a three-linked thermoelectric conversion collective unit 600 which is divided into two and is modified so that the generated voltage output is taken out from two pairs of output terminals 613, 614 and 615, 616. There may be three pairs of output terminals. By making a plurality of pairs of output terminals, all thermoelectric conversion units are mixed in series connection and parallel connection. Even if it occurs, it is possible to prevent the power generation function from being completely stopped and to supply the output voltage to the outside from the output terminal pair in the region where the disconnection failure is not included.
According to the modification of the third embodiment, it is possible to further improve the reliability of the three-linked or multi-connected thermoelectric conversion collective unit having a power generation function as a product.

6). Fourth Embodiment As described above, the first to third embodiments of the present invention and their modifications (first to third modifications) have been described. However, the multi-coupled thermoelectric conversion collective unit of the present invention is described. It is also possible to form a module in which a plurality of units are connected in series, parallel, or a combination of series and parallel. In particular, in the present invention, the thermoelectric conversion collective unit can be manufactured consistently by the thin film process and the integrated circuit process as described above. Therefore, it is possible to manufacture a module in which a large number of connected thermoelectric conversion collective units are connected in series or in parallel from the beginning in the same wafer.

In other words, in the plurality of thermoelectric conversion assembly units formed in the same wafer, a step of forming a bonding conductive member that connects the output ends of adjacent thermoelectric conversion assembly units may be added. Of course, this step can be easily achieved by thin film processes such as vapor deposition and sputtering, and integrated circuit processes. Thereby, even when the thermoelectric conversion collective unit according to the present invention is modularized, it can be manufactured in a batch. Further, if the number of thermoelectric conversion collective units formed in one wafer is increased, it is naturally possible to simultaneously form a plurality of modules on one wafer and base material.
Further, even in a semiconductor type process, it can be manufactured by adding a step of connecting each thermoelectric conversion collective unit.

  Hereinafter, the configuration of the multi-connection Seebeck coefficient amplification thermoelectric conversion module in the fourth embodiment of the present invention will be described. In the fourth embodiment of the present invention, the output ends of a plurality of multiple connected Seebeck coefficient amplified thermoelectric conversion aggregate units are connected by a joining conductive member, and the multiple connected Seebeck coefficient amplified thermoelectric conversion aggregate units are connected in series and in parallel. It is set as the structure connected in a hybrid. Hereinafter, the multi-connection Seebeck coefficient amplification thermoelectric conversion is abbreviated as multi-connection thermoelectric conversion.

  FIG. 13 is a block diagram showing a multi-coupled thermoelectric conversion module 700 according to the fourth embodiment of the present invention. In the present embodiment, the connection ends of seven (or any number of multi-coupled thermoelectric conversion assembly units) multi-connection thermoelectric conversion assembly units 701 are connected by a bonding conductive member 702 in the direction D1. Then, for example, seven sets (arbitrary number of sets) are arranged in the D2 direction in a set in which the seven multi-coupled thermoelectric conversion collective units 701 are connected.

In the D2 direction, the output ends of the multi-connected thermoelectric conversion collective unit at the left end on FIG. 13 are connected in parallel by the joint conductive member 703. On the other hand, each output end of the multi-connected thermoelectric conversion collective unit at the left end of the right end is also connected in parallel by the bonding conductive member 704. That is, seven sets each including seven leftmost multi-unit thermoelectric conversion collective units in series in the D1 direction are connected in parallel in the D2 direction.
The output ends 705 and 706 may be obtained by extending the bonding conductive members 703 and 704, or may newly connect a bonding conductive member. Moreover, the leftmost multi-connection thermoelectric conversion collective unit demonstrated in the 1st-3rd embodiment and the 1st-3rd modification can be used for these thermoelectric conversion multi-connection thermoelectric conversion units.

  Therefore, the multi-connection thermoelectric conversion module in the fourth embodiment is configured by a multi-connection thermoelectric conversion unit in which three conductive members having the same positive and negative signs are electrically connected in series. For this reason, it is possible to increase output significantly compared with the past.

  The bonding conductive members 702, 703, and 704 can be formed by vapor deposition, sputtering, CVD, or the like. These joining conductive members may be made of the same material as the output end of the multi-coupled thermoelectric conversion assembly unit 701. In this case, in the step of forming the output end of the multi-connection thermoelectric conversion assembly unit, the joint conductive members 702, 703, 704 are simultaneously formed. It can also be formed.

Therefore, the multi-coupled thermoelectric conversion module according to the present embodiment can be formed by a thin film process or an integrated circuit process, and a plurality of thermoelectric conversion modules can be manufactured collectively as the wafer size permits. .
In addition, when the multi-coupled thermoelectric conversion collective unit constituting the multi-coupled thermoelectric conversion module is used in the second or third embodiment of the present invention, a multi-coupled thermoelectric having a serial connection and a parallel connection mixedly connected. Since the conversion unit and the multi-coupled thermoelectric conversion collective unit are mixed, even if some conductive members and bonded conductive members are cut, the power generation function of the multi-coupled thermoelectric conversion module as a whole is prevented from stopping. Can do. Further, in the present embodiment, since these multiple connected thermoelectric conversion aggregate units are connected in series and further connected in parallel, a part of the joining conductive member connecting the multiple connected thermoelectric conversion aggregate units is disconnected. However, the power generation function does not stop completely.

  Furthermore, by configuring a multi-coupled thermoelectric conversion module using a hybrid connection of series connection and parallel connection, the power generation function can be completely prevented from being stopped, and the reliability of the multi-connection thermoelectric conversion module having an electrical function as a product can be further improved. Can be improved. In addition, in all of the multi-coupled thermoelectric conversion modules configured by series connection or parallel connection or mixed connection of series connection and parallel connection, if there is no damage such as partial disconnection in the multi-connection thermoelectric conversion module, impedance matching is performed. Comparing the power supplied to the load circuit set as described above, it is known that the power supplied by all the configurations is equal to each other.

7． Fifth Embodiment Next, the configuration of a multi-connected Seebeck coefficient amplification thermoelectric conversion panel in the fifth embodiment of the present invention will be described. The fourth embodiment of the present invention is an example of manufacturing a thermoelectric conversion system having a large beam scale. The output ends of a plurality of multi-connected Seebeck coefficient amplification thermoelectric conversion modules are connected to each other by a joining conductive member, and the multi-connection Seebeck coefficient amplification is performed. The thermoelectric conversion modules are configured to be connected in series and parallel. Hereinafter, similarly to the above, the multi-connection Seebeck coefficient amplification thermoelectric conversion is abbreviated as multi-connection thermoelectric conversion.
FIG. 14 is a top view showing a configuration of a multi-connection thermoelectric conversion panel 710. FIG. 14 shows an example in which a multi-connected thermoelectric conversion module is arranged three in the D1 direction (the number is not limited and may be arbitrary) and three (optional) in the D2 direction. Further, as the multi-coupled thermoelectric conversion module, the multi-couple thermoelectric conversion module 700 shown in FIG. 13 or a multi-couple thermoelectric conversion module using a hybrid connection of series connection and parallel connection can be used.

  In the D1 direction, the output ends of adjacent multi-coupled thermoelectric conversion modules are connected to each other by a bonding conductive member 712, and, for example, three thermoelectric conversion modules are connected in series. A set of three thermoelectric conversion modules connected in series is further connected in parallel in the D2 direction by a joining conductive member 713, whereby a multi-connected thermoelectric conversion panel is configured. The output ends 714 and 715 may be obtained by extending the output ends of the multi-coupled thermoelectric conversion module 700 or may be newly connected. The joint conductive members 712 and 713 may be the same material.

In addition, in the multi-coupled thermoelectric conversion panel 710, the multi-coupled thermoelectric conversion modules are connected in parallel, so that the power generation function does not completely stop even if part of the joint conductive members 712 or 713 is disconnected. . Furthermore, by configuring a multi-coupled thermoelectric conversion panel using a hybrid connection of series connection and parallel connection, the power generation function can be completely prevented from stopping, and the reliability of the multi-connection thermoelectric conversion panel with electrical functions as a product can be improved. Can be improved.
In all of the multi-coupled thermoelectric conversion panels configured in series connection or parallel connection or mixed connection of series connection and parallel connection, if there is no damage such as partial disconnection in the multi-connection thermoelectric conversion panel, impedance matching Comparing the power supplied to the load circuit set as described above, it is known that the power supplied by all the configurations is equal to each other.

8). Sixth Embodiment Next, the configuration of a multi-connected Seebeck coefficient amplified thermoelectric conversion sheet in the sixth embodiment of the present invention will be described. In an example of manufacturing a thermoelectric conversion system having a larger scale than that of the fifth embodiment of the present invention, the output ends of a plurality of multiple connected Seebeck coefficient amplification thermoelectric conversion panels are connected to each other by a joining conductive member, and multiple connected Seebeck coefficient amplification is performed. The thermoelectric conversion panels are configured to be connected in a mixed manner in series and parallel. Hereinafter, similarly to the above, the multi-connection Seebeck coefficient amplification thermoelectric conversion is abbreviated as multi-connection thermoelectric conversion.
FIG. 15 is a top view showing the configuration of the multi-coupled thermoelectric conversion sheet 720. FIG. 15 shows an example in which multiple connected thermoelectric conversion panels 710 are arranged in the D1 direction (three are optional, not limited), and three (optional) are arranged in the D2 direction. Moreover, the multi-connection thermoelectric conversion panel using the multi-connection thermoelectric conversion panel 710 shown in FIG. 14 or a hybrid connection of series connection and parallel connection can be used as the multi-connection thermoelectric conversion panel.

  In the D1 direction, the output ends of the adjacent multiple connected thermoelectric conversion panels are connected to each other by the bonding conductive member 722, and, for example, three multiple connected thermoelectric conversion panels are connected in series. A multi-connected thermoelectric conversion sheet is configured by connecting three sets of these multi-connected thermoelectric conversion panels connected in series to each other in parallel in the D2 direction by the bonding conductive member 723. The output ends 724 and 725 may be obtained by extending the output end of the multi-coupled thermoelectric conversion panel 710 or may be newly connected. The joint conductive members 712 and 713 may be the same material.

In addition, since the multi-coupled thermoelectric conversion panels 720 are connected in parallel in the multi-couple thermoelectric conversion sheet 720, the power generation function does not completely stop even if part of the joint conductive members 722 and 723 is disconnected. . Furthermore, by configuring a multi-connection thermoelectric conversion sheet using a hybrid connection of series connection and parallel connection, it is possible to reliably prevent the power generation function from being stopped, and to improve the reliability of the multi-connection thermoelectric conversion sheet having an electric function as a product. Can be improved.
In addition, in all of the multi-coupled thermoelectric conversion sheets configured in series connection or parallel connection or mixed connection of series connection and parallel connection, if there is no damage such as partial cut in the multi-connection thermoelectric conversion sheet, impedance matching is performed. Comparing the power supplied to the load circuit set as described above, it is known that the power supplied by all the configurations is equal to each other.

9. Seventh Embodiment As described above, the first to sixth embodiments of the present invention have been described with respect to the embodiment in which high-efficiency thermoelectric conversion is performed from the external temperature difference and larger power is supplied to the load circuit. In contrast, the highly efficient multi-connected Seebeck coefficient amplification thermoelectric conversion circuit technology according to the present invention allows a current to flow through the circuit according to the present invention and enables highly efficient heat energy transfer by the Peltier effect. That is, the function of an air conditioner that absorbs heat from one side and releases heat from the other can be realized with higher efficiency than the case of using a single conventional thermoelectric material.
Next, three methods will be described for the seventh embodiment related to this highly efficient thermal energy transfer.
The first method is a method that uses power from an external power source. The second method is a method in which the output power of one or more independent independent high-efficiency multi-connection Seebeck coefficient amplification thermoelectric conversion circuits according to the present invention is used as the power of the external power supply. The third method is a method in which the same two high-efficiency multi-connection Seebeck coefficient amplification thermoelectric conversion circuits according to the present invention are used as load circuits, and current flows with their own output power.

In the first method, for example, the multi-connection thermoelectric conversion panel or multi-connection thermoelectric conversion sheet of the present invention is installed on the roof or outer wall of a house or a building, and the outer surface of the panel or sheet is absorbed by the black body heat absorbed by sunlight. By increasing the temperature to a low temperature by cooling the inner surface with water or air, electric power can be supplied to the target load circuit using thermoelectric power generation using sunlight. At this time, due to the Peltier effect due to the current flowing in the circuit of this panel or sheet, heat is absorbed on the high temperature outer surface, heat is generated on the low temperature inner surface, and water or air is warmed. The heat energy obtained by subtracting the calorific value from the endothermic amount is equal to the electric energy consumed in the entire circuit, and the energy conservation family is established. If the inside air of the panel or sheet is cooled by circulating indoor air, the room is gradually heated and acts as warm air for the air conditioner.
However, when the role of this cooler is insufficient, the amount of heat absorption and heat generation is increased and circulated by adding current to the current using auxiliary power from the external power supply and circulating the current. As a result of further warming, the indoor heating effect is further enhanced. At this time, in the entire system including the sunlight, the panel or sheet, the target load circuit, the external power supply, and the room, the amount of heat absorbed from sunlight increases, and the amount of heat absorbed from this increased amount is used as the heat energy in the room. The power supply to the load circuit is increased by the added current from the external power source. As a result, the increase in power supply to the room heating and the load circuit, which corresponds to the generation of electric power using natural energy of sunlight and the energy saving of external power, proceeds simultaneously.

  In the second method, as in the first method, a plurality of multi-coupled thermoelectric conversion panels or multi-coupled thermoelectric conversion sheets of the present invention are installed on the roof or outer wall of a house or building to directly use sunlight. Or, a solar energy or geothermal heat is absorbed by the heat storage fluid, and a power generation system using natural energy that generates power day and night with the plurality of panels or sheets is configured. A part of the electric power of this power generation system is used as electric power for the external power supply in an auxiliary manner in the first method, and is used for supplying current to an air conditioner panel or sheet. Even in the second method, the generation of electric power using a large amount of natural energy and the driving of the air conditioner as an external power saving are simultaneously performed.

In the third system, the same two multi-coupled thermoelectric conversion panels or multi-coupled thermoelectric conversion sheets according to the present invention are connected as load circuits for impedance matching with each other, and the currents of the circuits of the two panels or sheets are passed. For example, the first panel or sheet is installed on the roof or outer wall of a house or building to form a solar power generation circuit, and the second panel or sheet is heated and cooled to heat one of the air conditioner or two objects and cool the other. Use as a system. The phenomenon of thermal energy transfer due to the Peltier effect occurs at the moment when the power switch is turned on in the circuit, so the characteristic of thermal energy transfer due to the Peltier effect is that one of the two objects is instantaneous when current begins to flow in the thermoelectric circuit. Endothermic heat and heat on the other side.
In the circuit in which the first and second panels or sheets are connected, the outer surface is overheated by the black body absorption heat of sunlight while the inner surface of the first panel or sheet is cooled with water or air and kept at a low temperature. At the same time as the temperature difference occurs, current flows and the Peltier effect absorbs heat on the outer surface, heat is generated on the inner surface, and heat is absorbed on one side of the second panel or sheet, and heat is generated on the opposite surface. If air flows along the heat absorption surface and heat generation surface of the second panel or sheet, it can be used as both cool air for cooling and warm air for heating at the same time, and water is circulated instead of air to cool and heat objects. You can do both at the same time. Further, in the temperature region where the temperature dependence of the Seebeck coefficient is small, the heat absorption power and the heat generation power are almost equal on all surfaces. When this third system is adapted to a medium that conducts heat from the high temperature part of the first region to the second region, the heat absorption amount from the first region is instantaneously determined by the electromagnetic wave velocity in the second region. As a self-driving heat transfer system is realized, it becomes an ideal heat conduction medium with infinite heat conduction.

  As described above, a multi-connected Seebeck coefficient amplification thermoelectric conversion element, a multi-connection Seebeck coefficient amplification thermoelectric conversion unit, a multi-connection Seebeck coefficient amplification thermoelectric conversion assembly unit, a multi-connection Seebeck coefficient amplification thermoelectric conversion module, and a multi-connection Seebeck coefficient amplification thermoelectric conversion panel. The multi-connected Seebeck coefficient amplification thermoelectric conversion sheet and the manufacturing method thereof have been described. However, the present invention is not limited to the above-described embodiment, and is still considered as long as it does not depart from the gist of the present invention described in the claims. Needless to say, it includes various forms.

  1a, 1b, 1c, 1d, 1e, 2a, 2b, 2c, 2d, 2e, 22a, 22b, 22c, 23a, 23b, 23c... Conductive member, 3a, 3b, 3c, 3d, 3e, 3f, 4e , 24a, 24b, 24c, 24d ... conductive connecting members, 4, 4a, 4b, 41a, 41b, 702, 703, 704, 712, 713, 722, 723, ... joined conductive members, 5a, 5b , 20a, 20b, 20c ... insulating member, 6 ... Al substrate, 7 ... insulating film, 70a, 70b, 70d, 70e, 70f, 70g, 70h, 70k ... thermoelectric conversion element, 18a, 18b, 18c ... load circuit, 21 ... substrate, 25 ... resist, 28, 29 ... silicon dioxide region, 61, 62, 63, 64, 65, 66, 601, 602, 603 604 , 611, 612, 613, 614, 615, 616, 705, 706, 714, 715, 724, 725,... Output end, 71 a, 71 b, two parallel three-connected thermoelectric conversion units, 100, 300, 500, 701 ... multiple connected Seebeck coefficient amplified thermoelectric conversion element assembly unit, 700,711 ... multiple connected Seebeck coefficient amplified thermoelectric conversion module, 710,721 ... multiple connected Seebeck coefficient amplified thermoelectric conversion panel, 720 ... multiple Connected Seebeck coefficient amplification thermoelectric conversion sheet

Claims (11)

A connection configuration in which three or more conductive members having positive or negative Seebeck coefficients and the conductive members having the same sign Seebeck coefficient are electrically connected in series with a conductive connecting member, and both ends are the conductive members. Have
A structure of a multi-connected Seebeck coefficient amplification thermoelectric conversion element that amplifies the value of the Seebeck coefficient of the conductive member alone according to the connection form.   A pair of a multi-connected Seebeck coefficient amplification thermoelectric conversion element having a positive Seebeck coefficient according to claim 1 and a multi-connection Seebeck coefficient amplification thermoelectric conversion element having a negative Seebeck coefficient are joined by a joint conductive member, and the connection conductive member A structure of a multi-connection Seebeck coefficient amplification thermoelectric conversion unit, wherein a pair of output ends are connected to opposite portions of each other by a bonding conductive member. The multi-connected Seebeck coefficient amplification thermoelectric conversion unit according to claim 2 is bonded onto a plurality of electrical insulating materials having excellent thermal conductivity,
The output ends of a plurality of the multiple connected Seebeck coefficient amplification thermoelectric conversion units are connected in series by a joint conductive member, or connected in parallel, or a combination of series connection and parallel connection,
A plurality of the connected Seebeck coefficient amplification thermoelectric conversion units are joined in a state of being electrically insulated from each other, thereby forming one or more pairs of output ends by the joined conductive member.
A structure of a multi-connected Seebeck coefficient amplification thermoelectric conversion collective unit characterized by that.   A plurality of multiple connected Seebeck coefficient amplified thermoelectric conversion aggregate units according to claim 3 are connected to each other by connecting the output ends of the units in series connection, parallel connection, or a combination of series connection and parallel connection. A plurality of Seebeck coefficient amplification thermoelectric conversions, wherein the Seebeck coefficient amplification thermoelectric conversion collective units are joined in a state of being electrically insulated from each other, and one or more pairs of output ends are connected by the connecting conductive member. Module structure.   A plurality of connected Seebeck coefficient output thermoelectric conversion modules according to claim 4 are connected in series by a connecting conductive member, or connected in parallel by connecting a series connection and a parallel connection. A multi-coupled Seebeck coefficient amplification thermoelectric conversion panel comprising: a plurality of coupled output terminals connected to each other by the connection conductive members by joining coefficient amplification thermoelectric conversion modules in a state of being electrically insulated from each other; Construction.   A plurality of connected Seebeck coefficient output thermoelectric conversion panels according to claim 5 are connected in series by a connecting conductive member, or connected in parallel by connecting a series connection and a parallel connection. A multi-connected Seebeck coefficient amplification thermoelectric conversion sheet comprising a plurality of coupled Seebeck coefficient amplification thermoelectric conversion sheets, wherein the coefficient amplification thermoelectric conversion panels are joined in a state of being electrically insulated from each other, thereby connecting one or more pairs of output ends by the connection conductive member. Construction. Performing each of the steps of forming the structure of the multi-connected Seebeck coefficient amplified thermoelectric conversion assembly unit according to claim 3 by repeating a plurality of times and sequentially performing the steps;
And manufacturing a multi-connected Seebeck coefficient amplified thermoelectric conversion assembly unit at the same time. Performing each of the steps of forming the structure of the multi-connected Seebeck coefficient amplification thermoelectric conversion module according to claim 4 sequentially and repeatedly a plurality of times;
And manufacturing a multi-connected Seebeck coefficient amplified thermoelectric conversion module at the same time. Forming a plurality of connected Seebeck coefficient amplified thermoelectric conversion panels at the same time by repeatedly performing each step of forming the structure of the multiple connected Seebeck coefficient amplified thermoelectric conversion panel a plurality of times. A method for producing a multi-connected Seebeck coefficient amplified thermoelectric conversion panel characterized by And simultaneously performing each step of forming the structure of the multi-connected Seebeck coefficient amplified thermoelectric conversion sheet according to claim 7 a plurality of times and sequentially forming the multiple connected Seebeck coefficient amplified thermoelectric conversion sheet. A method for producing a multi-connected Seebeck coefficient amplified thermoelectric conversion sheet characterized by A plurality of connected Seebeck coefficient amplified thermoelectric conversion sheets according to claim 6 are connected in series by a connecting conductive member, or a plurality of connected Seebeck coefficient-amplified thermoelectric conversion sheets mixed in series connection and parallel connection. A multi-coupled Seebeck coefficient amplification thermoelectric conversion system comprising: a plurality of coupled output terminals connected to each other by the connection conductive members by joining coefficient amplification thermoelectric conversion sheets in a state of being electrically insulated from each other; Construction.

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