JP2011215471A - Display device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a display device in which a color filter layer is formed without complex processes similarly as in a case of forming a color filter layer on an opposing substrate, the color filter layer being provided on an array substrate.SOLUTION: The display device 10 includes: the array substrate 20 in which a switching element 26 is formed for every pixel; and an opposing substrate 30 which is disposed opposing to the array substrate 20. The array substrate 20 includes: an array substrate body 21; a color filter layer 22 which is provided on the array substrate body 21 and made of a plurality of coloring layers 24 corresponding to each pixel and a light shielding layer 23 provided between these coloring layers 24; and a switching element layer provided on an upper layer of the color filter layer 22.

Description

  The present invention relates to, for example, a display device such as a liquid crystal display device or a plasma display having a configuration in which an array substrate having a color filter layer and a counter substrate are arranged to face each other, and a method for manufacturing the same.

  Since the liquid crystal display device can be thinned and has low power consumption, it is widely used as a display for OA equipment such as a personal computer, portable information equipment such as a mobile phone and a PDA (Personal Digital Assistant).

  The liquid crystal display device includes a liquid crystal display panel and a backlight unit attached to the back side of the liquid crystal display panel. The liquid crystal display panel has a configuration in which an array substrate provided with a switching element such as a thin film transistor (TFT) and a counter substrate arranged to face the array substrate are bonded to each other with a sealant. A liquid crystal material is sealed in a space formed between the two substrates to form a liquid crystal layer. As the counter substrate, a substrate that is slightly smaller than the array substrate is employed, and a drive circuit is mounted on the terminal region of the array substrate exposed by this.

  The liquid crystal display device adjusts the transmittance of light incident from the outside by changing the alignment state of the liquid crystal molecules by turning on and off the electrodes corresponding to the pixels, and the transmitted light is transmitted through the color filter layer. Color display is performed by transmitting the colored portion.

  In general, a liquid crystal display panel has an array substrate (TFT substrate) in which TFTs are arranged in a matrix and a counter substrate (color filter substrate (CF substrate)) provided with a color filter layer so that a liquid crystal layer is interposed between the two substrates. It is comprised by pinching. Since the regions of the TFT substrate TFT and the light shielding layer (black matrix) of the CF substrate are both light shielding regions, alignment is performed so that each TFT and the light shielding layer are positioned correspondingly.

  By the way, since the TFT substrate and the CF substrate are often manufactured by independent manufacturing processes, it is difficult to align each TFT and each light shielding layer, and misalignment is likely to occur. In addition, since the TFT substrate manufacturing process includes a process at a higher temperature than the CF substrate manufacturing process, the substrate is more easily contracted (shrinked) than the CF substrate, and the position of the TFT provided on the TFT substrate is accurately controlled. This becomes difficult, and this also causes misalignment. Furthermore, in consideration of variations in bonding accuracy, in general, the width of the light shielding layer on the color filter layer side is set to be larger than the width of the actual shielding portion, so the aperture ratio is reduced accordingly. The brightness of the liquid crystal display device is reduced. In order to compensate for the decrease in luminance, the number of backlights must be increased or the luminance must be increased by other means, resulting in increased power consumption. The problem of these positional shifts and the accompanying decrease in aperture ratio becomes more pronounced as the required display performance becomes higher definition.

  Patent Document 1 describes an on-chip color filter type liquid crystal display device in which a color filter layer is provided on the surface of an array substrate. The substrate surface is flattened by filling concave portions of the array substrate with a color filter material. A manufacturing method of a liquid crystal display device in which a light shielding film and an alignment film are formed after forming a color filter layer is disclosed. And according to this structure, since the light shielding film and the color filter film do not exist on the counter substrate side, it is described that the alignment with the array substrate in forming a panel becomes unnecessary.

Japanese Patent Laid-Open No. 06-110058

  By the way, the color filter layer is usually made of a material in which a pigment is dispersed in a resin such as an acrylic resin. The color filter layer is formed by applying the resin material and then heating to cure the resin. For example, when an acrylic resin is used as the resin component of the color filter layer, the resin is cured by heating to about 240 ° C. in consideration of the heat resistance of the acrylic resin.

  On the other hand, in the TFT formation process, for example, in a low-temperature polysilicon TFT ion-doped with B (boron), P (phosphorus), etc., the rearrangement of Si by thermal energy and the bonding of B-Si or P-Si are promoted. High temperature annealing called activation is necessary in the process of forming a semiconductor. Therefore, if a color filter layer is provided in advance on the array substrate main body, the resin constituting the color filter layer is damaged by the high heat at the time of TFT formation. In order to avoid this, when the color filter layer is provided on the array substrate, the color filter layer is provided on the upper layer after the TFT is formed.

  When the color filter layer is provided on the counter substrate, the color filter layer can be formed by photolithography or an inkjet method. However, when the color filter layer is formed on the array substrate body in which TFTs are provided in advance, In order to prevent the TFT and the insulating layer covering it from being damaged by the metal component contained in the pigment, it is necessary to form a color filter layer through a complicated process. For example, in Patent Document 1, an organic film is formed on the surface of an array substrate on which TFTs are formed, and then a concave base formed corresponding to each TFT is filled with a colored base layer such as casein by photolithography. After that, it is described that the color filter layer is formed by curing it and further coloring the colored base layer with red, green, blue or the like.

  An object of the present invention is to obtain a display device in which a color filter layer is formed on an array substrate without using a complicated process as in the case of forming a color filter layer on a counter substrate.

  The display device of the present invention includes an array substrate in which a switching element is formed for each pixel, and a counter substrate disposed to face the array substrate, the array substrate including an array substrate body, A color filter layer provided on the array substrate main body and including a plurality of colored layers corresponding to each pixel, and a light-shielding layer located between the colored layers; and a switching element layer provided on the color filter layer; , Provided.

  According to the above configuration, since the color filter layer is provided on the array substrate body, the light shielding layer of the color filter layer and the switching element of the switching element layer can be accurately aligned, and the display device A large pixel area can be secured. In addition, since the color filter layer is provided on the array substrate main body and the switching element layer is provided above the color filter layer, it is not necessary to consider the presence of the switching layer in the color filter layer forming step. Therefore, a display device in which the color filter layer is formed on the array substrate by using a method such as photolithography or an ink jet method is obtained without going through complicated steps as in the case of forming the color filter layer on the counter substrate side. be able to.

  In the display device of the present invention, the material constituting the color filter layer may have heat resistance to a temperature of about 400 to 600 ° C.

  According to said structure, since a color filter layer has heat resistance with respect to the temperature of 400-600 degreeC, even if it becomes high temperature in the process of forming the switching element layer after forming a color filter layer, a color filter layer is It is possible to suppress damage from heat.

  In the present invention, the colored layer is preferably made of a material that does not contain a resin.

  According to said structure, since the colored layer is comprised with the material which does not contain resin, the heat resistant temperature of a colored layer can be set to the temperature higher than the heat resistant temperature of resin. Therefore, even if the colored layer becomes high temperature in the process of forming the switching element layer after forming the color filter layer, the color filter layer can be prevented from being damaged by heat.

  In the present invention, the light shielding layer is preferably made of a material that does not contain a resin.

  According to said structure, since the light shielding layer is comprised with the material which does not contain resin, the heat resistant temperature of a light shielding layer can be set to a temperature higher than the heat resistant temperature of resin. Therefore, even when the light shielding layer becomes high in the process of forming the switching element layer after forming the color filter layer, the color filter layer can be prevented from being damaged by heat.

  In the present invention, a liquid crystal layer may be provided between the array substrate and the counter substrate.

  In the method for manufacturing a display device according to the present invention, a color filter layer is formed on an array substrate body, and then a switching element layer including a switching element is formed on the color filter layer to obtain an array substrate.

  According to the above manufacturing method, since the color filter layer is formed on the array substrate body, alignment between the light shielding layer of the color filter layer and the switching element of the switching element layer can be accurately performed, and the pixel of the display device A large area can be secured. In addition, since the switching element layer including the switching element is formed on the color filter layer after the color filter layer is formed, it is not necessary to consider the presence of the switching layer in the color filter layer forming process. Therefore, the color filter layer can be formed using a method such as photolithography or an inkjet method without passing through a complicated process as in the case of forming the color filter layer on the counter substrate side.

  The display device manufacturing method of the present invention forms a color resist film containing a colorant and a resin on an array substrate body, and after forming a light shielding resist film containing a light shielding agent and a resin, the color resist film and the light shielding It is preferable to remove the resin in each resist film by baking the resist film to form a colored layer and a light shielding layer to obtain a color filter layer.

  According to the above manufacturing method, the resin in each resist film is removed to form a colored layer and a light shielding layer to obtain a color filter layer. For example, a color filter layer having heat resistance to a temperature of 400 to 600 ° C. Can be provided.

  In the method for manufacturing a display device of the present invention, the color resist film and the light-shielding resist film are baked at a temperature higher than the heat resistance temperature of the resin included in the color resist film and the heat resistance temperature of the resin included in the light-shielding resist film. preferable.

  In the method for manufacturing a display device of the present invention, it is preferable that the colored layer obtained by baking the color resist film is made of a material that does not contain a resin.

  According to the above manufacturing method, since the colored layer obtained by baking the color resist film is made of a material not containing a resin, the heat resistant temperature of the colored layer is set higher than the heat resistant temperature of the resin. it can. Therefore, even when the temperature in the process of forming the switching element layer becomes high, it is possible to prevent the color filter layer formed in advance under the switching element layer from being damaged by heat.

  In the manufacturing method of the display device of the present invention, it is preferable that the light shielding layer obtained by baking the light shielding resist film is made of a material not containing a resin.

  According to the above manufacturing method, since the light-shielding layer obtained by baking the light-shielding resist film is made of a material that does not contain a resin, the heat-resistant temperature of the light-shielding layer is set to a temperature higher than the heat-resistant temperature of the resin. it can. Therefore, even when the temperature in the process of forming the switching element layer becomes high, it is possible to prevent the color filter layer formed in advance under the switching element layer from being damaged by heat.

  In the method for manufacturing a display device of the present invention, the color resist film and the light-shielding resist film may be formed using photolithography.

  Alternatively, the color resist film may be formed using an inkjet method, and the light-shielding resist film may be formed using photolithography.

  Further, a color resist film and a light-shielding resist film may be formed using an ink jet method.

  In the method for manufacturing a display device of the present invention, a liquid crystal layer may be formed between the array substrate and the counter substrate.

  According to the present invention, since the color filter layer is provided on the array substrate body, the alignment of the light shielding layer of the color filter layer and the switching element of the switching element layer can be performed with high accuracy, and the pixel of the display device A large area can be secured. In addition, since the color filter layer is provided on the array substrate main body and the switching element layer is provided above the color filter layer, it is not necessary to consider the presence of the switching layer in the color filter layer forming step. Therefore, a display device in which the color filter layer is formed on the array substrate by using a method such as photolithography or an ink jet method is obtained without going through complicated steps as in the case of forming the color filter layer on the counter substrate side. be able to.

It is a top view of a liquid crystal display device. It is sectional drawing in the II-II line of FIG. 1 is a cross-sectional view of a liquid crystal display device of Embodiment 1. FIG. 3 is a cross-sectional view of the array substrate of Embodiment 1. FIG. 3 is a flowchart of a manufacturing method of the liquid crystal display device of Embodiment 1. 4 is a flowchart of a method for manufacturing the array substrate according to the first embodiment. (A)-(h) is explanatory drawing of the manufacturing process of the liquid crystal display device of Embodiment 1. FIG. (A)-(g) is explanatory drawing of the manufacturing process of the liquid crystal display device of Embodiment 2. FIG. It is sectional drawing of the array substrate of Embodiment 3. 10 is a flowchart of a method for manufacturing an array substrate according to the third embodiment. (A)-(e) is explanatory drawing of the manufacturing process of the liquid crystal display device of Embodiment 3. FIG.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the present embodiment, an active matrix driving type liquid crystal display device having a switching element for each pixel will be described as an example. However, the present invention is not limited to the following first to third embodiments, and may have other configurations. This liquid crystal display device is used, for example, for an OA device such as a personal computer, a display of a portable information device such as a mobile phone, PDA (Personal Digital Assistant), or the like.

Embodiment 1
1 and 2 show a liquid crystal display device 10 according to a first embodiment. The liquid crystal display device 10 includes a liquid crystal display panel in which an array substrate 20 and a counter substrate 30 are arranged to face each other. A liquid crystal layer 40 is provided between the array substrate 20 and the counter substrate 30 in a space surrounded by the sealing material 50.

  The liquid crystal display device 10 includes a display area D formed inside the sealing material 50 and having a plurality of pixels arranged in a matrix, and a non-display area N arranged around the display area D. . A part of the non-display area N is a terminal area T for attaching a drive circuit and the like. In other words, at least one edge of the liquid crystal display device 10 is formed so that the array substrate 20 protrudes from the counter substrate 30 as shown in FIG.

As shown in FIG. 4, the array substrate 20 has a color filter layer 22 formed on an array substrate body 21. An interlayer insulating film 25 made of, for example, SiN, SiO ₂ , SiNO or the like is provided on the color filter layer 22, and a switching element layer including a plurality of switching elements 26 is formed thereon. A planarizing film made of, for example, acrylic resin is provided on the switching element layer, and a plurality of pixel electrodes 28 made of, for example, ITO are formed on the planarizing film so as to be electrically connected to each switching element. Yes. An alignment film 29 made of, for example, polyimide is further formed on the upper layer of the pixel electrode 28. Here, the case where the switching element layer is a TFT layer including the TFT 26 as the switching element 26 will be described.

  The color filter layer 22 includes a plurality of colored layers 24 provided for each pixel, and a light shielding layer 23 (black matrix) that partitions the colored layers 24. The plurality of colored layers 24 are configured, for example, by periodically arranging red, green, and blue colored layers 24R, 24G, and 24B. Each of the light shielding layer 23 and the colored layer 24 constituting the color filter layer 22 has heat resistance to a temperature of about 400 to 600 ° C. in order to withstand a high temperature process at the time of forming the TFT 26 provided thereon.

  Each colored layer 24 is formed of a colorant that does not contain a resin component. Examples of the coloring material for the red colored layer 24R include anthraquinone pigments and the like. Examples of the coloring material for the green colored layer 24G include phthalocyanine pigments. Examples of the coloring material for the blue colored layer 24B include phthalocyanine pigments. Each colored layer 24 has a thickness of, for example, about 300 to 600 nm, and this thickness is 1/10 to 1/5 when the colored layer is formed of a material containing a resin.

  The light shielding layer 23 is provided in a boundary region between the adjacent colored layers 24 and is formed of a black material that does not include a resin component, such as carbon black. The light shielding layer 23 has a thickness of, for example, about 150 to 300 nm, and this thickness is 1/10 to 1/5 when the light shielding color layer is formed of a material containing a resin.

  The TFT layer is formed on the interlayer insulating film 25 so that a plurality of source lines and a plurality of gate lines intersect with each other, and a plurality of TFTs 26 are formed at the intersections of the source lines and the gate lines. Yes.

  Although not shown, it is preferable that an alignment mark for forming the TFT 26 so as to correspond to the light shielding region is provided in the non-display region N of the array substrate 20. For example, the alignment mark can be formed of the same material as the light shielding layer 23 and the colored layer 24 of the color filter layer 22.

  The counter substrate 30 is provided with a common electrode 32 made of, for example, ITO so as to cover the entire surface of the counter substrate main body 31. An alignment film 33 made of, for example, a polyimide film is provided so as to cover the common electrode 32.

  The liquid crystal layer 40 is made of a nematic liquid crystal material having electro-optical characteristics.

  In the liquid crystal display device 10 configured as described above, one pixel is formed for each pixel electrode 28. When a gate signal is sent from the gate line and the TFT is turned on in each pixel, the pixel line 28 is turned on. A source signal is sent and a predetermined charge is written to the pixel electrode 28 via the source electrode and the drain electrode, and a potential difference is generated between the pixel electrode 28 and the common electrode 32 of the counter substrate 30, and the liquid crystal layer A predetermined voltage is applied to the liquid crystal capacitor composed of 40. In the liquid crystal display device 10, an image is displayed by adjusting the transmittance of light incident from the outside using the fact that the alignment state of the liquid crystal molecules changes according to the magnitude of the applied voltage.

<Method for manufacturing liquid crystal display device>
Next, a method for manufacturing the liquid crystal display device 10 according to Embodiment 1 will be described by way of example.

  FIG. 5 shows an overall flowchart of the manufacturing method of the liquid crystal display device 10. First, the array substrate 20 and the counter substrate 30 are independently manufactured (steps S1 and S2). Then, these two substrates 20 and 30 are bonded to each other through the sealing material 50 (step S3). After obtaining the liquid crystal display panel by bonding, the liquid crystal display device 10 is obtained according to a known manufacturing process (steps S4 to S7).

  First, in step S1, the array substrate 20 is manufactured. FIG. 6 is a flowchart of the array substrate manufacturing process, and FIG. 7 is an explanatory diagram showing the manufacturing process of the array substrate 20.

  First, in step S <b> 11, the array substrate body 21 is prepared, and the color filter layer 22 is formed on the array substrate body 21. Since the TFT substrate 26 is not yet provided on the array substrate main body 21 on which the color filter layer 22 is formed, it is not necessary to take into consideration the influence of the formation process of the color filter layer 22 on the TFT 26. Therefore, the color filter layer 22 can be formed without going through a complicated process as in the case of forming the color filter layer on the counter substrate side.

  First, in step S12A, a light shielding resist film 72 is formed by photolithography. Specifically, a negative type light-shielding resist in which a light-shielding material composed of a black component such as carbon black is dispersed in a resin such as acrylic resin is applied to the entire surface of the array substrate body 21 by roll coating or spin coating to form a resin film 71. Is deposited. Then, as shown in FIG. 7A, the resin film 71 is exposed through a mask MN having an opening that overlaps the region where the light shielding layer 23 is formed. Thereafter, the resin film 71 is developed to form a light-shielding resist film 72 on the surface of the array substrate body 21 as shown in FIG. 7B. Although the negative type light shielding resist is used here, the light shielding resist film 72 may be formed using a positive type light shielding resist.

  Next, in step S12B, a color resist film 74 is formed by photolithography. Specifically, a positive color resist in which a red colorant is dispersed in a resin such as an acrylic resin is applied to the entire surface of the array substrate body 21 by roll coating or spin coating to form a resin film 73R. Then, as shown in FIG. 7C, the resin film 73R is exposed through the MP having an opening that overlaps the region where the red colored layer 24R is not formed. Thereafter, by developing the resin film 73R, as shown in FIG. 7D, a red color resist film 74R is formed in a region where the red colored layer 24R partitioned by the light shielding resist is formed. In FIG. 7, specific examples of the color resist film 74 are shown as a red color resist film 74R, a green color resist film 74G, and a blue color resist film 74B.

  By repeating this series of steps, a green color resist film 74G and a blue color resist film 74B are sequentially formed as shown in FIG. The resin contained in the color resist may be the same type of resin as the light-shielding resist or a different type of resin. Although a positive color resist is used here, the color resist film 74 may be formed using a negative color resist. Further, FIG. 7E shows a cross-sectional view in which the red color resist film 74R, the green color resist film 74G, and the blue color resist film 74B are continuously formed in the upper layer of the light shielding resist film 72. Even if the color resist film 74 is provided on the light shielding resist film 72, it does not substantially function. Therefore, the color resist film 74 may not be provided on the light shielding resist film 72. For example, the red color resist film 74R and the green color resist film 74G may be patterned so as to be adjacent to each other with an interval in the upper layer of the light shielding resist film 72 that partitions them.

  In addition, it is preferable that the light shielding layer 23 or the color layer 24 and the alignment mark are simultaneously formed in a subsequent process by patterning the light shielding resist film 72 and the color resist film 74 at the alignment mark formation position.

  Subsequently, in step S13, the light-shielding resist film 72 and the color resist film 74 formed are baked using, for example, a batch type furnace, and the resin components are removed from the resist films 72 and 74, respectively. The firing conditions at this time are, for example, a firing temperature of about 400 to 600 ° C. and a firing time of about 60 to 240 minutes. These baking conditions can be changed depending on the heat resistance characteristics of the resins contained in the resist films 72 and 74, and are preferably baking conditions that can completely remove the resin components of the resist films 72 and 74. The temperature is preferably higher than the heat resistance temperature of the resin contained in each of the resist films 72 and 74. By this baking, the light shielding resist film 72 and the color resist film 74 become the light shielding layer 23 and the colored layer 24, respectively, as shown in FIG. 7F, and the color filter layer 22 is obtained.

  Next, in step S14, as shown in FIG. 7G, an interlayer insulating film 25 is formed using, for example, a sputtering method so as to cover the color filter layer 22.

  Next, in step S <b> 15, a TFT 26 is formed as a switching element on the interlayer insulating film 25. For example, a gate line and a gate electrode, a gate insulating film, a semiconductor layer, a source line, a source electrode, and a drain electrode are formed in this order by photolithography, and a channel portion is patterned in the semiconductor layer, thereby forming the TFT 26. .

  At this time, since the light shielding layer 23 and the colored layer 24 are obtained by baking the light shielding resist film 72 and the color resist film 74, the light shielding layer 23 and the colored layer 24 are composed of a material not containing a resin. The heat resistance temperature becomes higher than the heat resistance temperature of the resin. Therefore, even if the high temperature annealing is performed at a high temperature of about 400 to 600 ° C. in the TFT manufacturing process, the color filter 22 is not damaged.

  The TFT 26 is positioned in a region corresponding to the light shielding layer 23 by using an alignment mark formed simultaneously with the light shielding layer 23 or the colored layer 24 of the color filter layer 22 or by a process different from the formation of the color filter layer 22. As shown in FIG.

  At this time, since both the color filter layer 22 and the TFT 26 are provided on the same substrate (array substrate body 21), the positions of the light-shielding layer 23 and the TFT 26 are more accurate than when each is formed on a different substrate in a separate process. Can be combined. Therefore, the region of the light shielding layer 23 can be laid out without considering the positional deviation, and a large pixel region can be secured, so that excellent luminance characteristics can be obtained.

  Subsequently, the array substrate 20 is obtained by sequentially performing the formation of the planarizing film 27 in step S16, the formation of the pixel electrode 28 in step S17, and the formation of the alignment film 29 in step S18 using a known method. (Step S19).

  Next, in step S2, the counter substrate 30 is formed.

  First, an ITO film to be the common electrode 32 is formed on the entire surface of the counter substrate body 31 by using a sputtering method or the like. Then, in the display region D, a counter substrate 30 is obtained by forming a polyimide film that becomes the alignment film 33 by a known method so as to cover the common electrode 32.

  Here, it has been described that the counter substrate 30 in step S2 is manufactured after the array substrate 20 in step S1 is manufactured. However, each of the process steps S1 and S2 is an independent process, which one is performed first. Can be performed at the same time.

  Subsequently, in step S3, the sealing material 50 is disposed on the outer peripheral edge of the array substrate 20 or the counter substrate 30, and the both substrates 20 and 30 are overlapped to cure the sealing material 50, whereby the array substrate 20 and the counter substrate 30 are cured. And paste together. At this time, since the color filter layer 22 is provided on the array substrate 20 and the alignment between the light shielding layer 23 and the TFT 26 has already been performed with high accuracy, both the substrates 20 and 30 are performed without performing such alignment work. Can be pasted together.

  Next, in step S4, a liquid crystal display panel is obtained by introducing a liquid crystal material into the space between the substrates 20 and 30 to form the liquid crystal layer 40 by a known method (step S5).

  Finally, in step S6, a polarizing plate (not shown) is disposed on the surface of the liquid crystal display panel, a drive circuit is attached to the terminal region T on the array substrate 20, and a backlight is attached to the substrate surface. Thereby, the liquid crystal display device 10 is completed (step S7).

<< Embodiment 2 >>
Next, the liquid crystal display device 10 according to Embodiment 2 of the present invention will be described. The liquid crystal display device 10 has the same configuration as the liquid crystal display device of the first embodiment, but differs from the first embodiment in the manufacturing method. The same or corresponding components will be described using the same reference numerals. In the method for manufacturing the liquid crystal display device 10 according to the second embodiment, the process proceeds according to the flowcharts of FIGS.

  Similar to the first embodiment, in step S1, the array substrate 20 is manufactured. FIG. 8 is an explanatory diagram showing a manufacturing process of the array substrate 20.

  First, in step S <b> 11, the array substrate body 21 is prepared, and the color filter layer 22 is formed on the array substrate body 21.

  First, in step S12A, the light shielding resist film 72 is formed in the same manner as in the first embodiment (FIGS. 8A and 8B).

  Next, in step S12B, a color resist film 74 is formed using an inkjet method. First, as shown in FIG. 8C, the ink jet head is set so as to face the array substrate body 21, and as shown in FIG. 8D, the raw material of the color resist film 74 is supplied onto the substrate from the nozzle of the ink jet head. The color resist film 74 is formed.

  After the formation of the light-shielding resist film 72 and the color resist film 74, as in the first embodiment, the resist films 72 and 74 are baked in step S13 to obtain the color filter layer 22 (FIG. 8E). Then, in step S14, the interlayer insulating film 25 is formed (FIG. 8F), and subsequently in steps S15 to S18, the TFT 26, the planarization film 27, the pixel electrode 28, and the alignment film 29 are formed. By doing so, the array substrate 20 is completed as shown in FIG. 8G (step S19).

  Note that the manufacturing process of the counter substrate 30 in step S2 and the processes after the bonding of the array substrate 20 and the counter substrate 30 (steps S3 to S7) are performed in the same manner as in the first embodiment, and thus detailed description thereof is omitted. .

<< Embodiment 3 >>
Next, a liquid crystal display device 10 according to Embodiment 3 of the present invention will be described. The liquid crystal display device 10 has the same configuration as that of the first embodiment except for the array substrate 20. The same or corresponding components will be described using the same reference numerals. Only the array substrate 20 will be described for the configuration of the liquid crystal display device 10 of the third embodiment.

  As shown in FIG. 9, the array substrate 20 has a configuration in which a color filter layer 22, an interlayer insulating film 25, a TFT 26, a planarization film 27, a pixel electrode 28, and an alignment film 29 are sequentially stacked on the array substrate body 21. Have.

  The color filter layer 22 is composed of a colored layer 24 provided corresponding to each pixel and a light shielding layer 23 provided so as to partition them. In the color filter layer 22, the colored layer 24 is provided so as to be the same layer as the light shielding layer 23 without overlapping the upper layer of the light shielding layer 23.

  The configuration of the array substrate 20 other than the color filter layer 22 is the same as that of the first embodiment.

<Method for manufacturing liquid crystal display device>
Next, a method for manufacturing the liquid crystal display device 10 according to the third embodiment will be described. In this manufacturing method, the process proceeds along the flowchart of FIG.

  First, in step S1, the array substrate 20 is manufactured. FIG. 10 is a flowchart of the array substrate manufacturing process, and FIG. 11 is an explanatory diagram showing the array substrate 20 manufacturing process.

  First, in step S <b> 11, after preparing the array substrate body 21, the color filter layer 22 is formed on the array substrate body 21.

  First, in step S12, a light-shielding resist film 72 and a color resist film 74 are simultaneously formed using an inkjet method. First, as shown in FIG. 11A, the ink jet head is set so as to face the array substrate body 21, and as shown in FIG. 11B, the light shielding resist film 72 and the color resist film are formed from the nozzles of the ink jet head. The light shielding resist film 72 and the color resist film 74 are formed by applying 74 raw materials onto the substrate.

  After the formation of the light-shielding resist film 72 and the color resist film 74, as in the first embodiment, the resist films 72 and 74 are baked in step S13 to obtain the color filter layer 22 (FIG. 11C). In step S14, the interlayer insulating film 25 is formed (FIG. 11D), and subsequently in steps S15 to S18, the TFT 26, the planarization film 27, the pixel electrode 28, and the alignment film 29 are formed. By doing so, the array substrate 20 is completed as shown in FIG. 11E (step S19).

  Note that the manufacturing process of the counter substrate 30 in step S2 and the processes after the bonding of the array substrate 20 and the counter substrate 30 (steps S3 to S7) are performed in the same manner as in the first embodiment, and thus detailed description thereof is omitted. .

<< Other Embodiments >>
In the first to third embodiments, the liquid crystal display device has been described as a display device having a configuration in which the array substrate 20 including the color filter layer 22 and the counter substrate 30 are arranged to face each other. However, the present invention is not limited to this. The present invention can also be applied to a display device such as a plasma display.

  INDUSTRIAL APPLICABILITY The present invention is useful for a display device such as a liquid crystal display device or a plasma display having a configuration in which an array substrate provided with a color filter layer and a counter substrate are opposed to each other, and a manufacturing method thereof.

10 Display device (Liquid crystal display device)
20 Array substrate 21 Array substrate body 22 Color filter layer 23 Light-shielding layer 24 Colored layer 26 Switching element (TFT)
30 Counter substrate 40 Liquid crystal layer 72 Light-shielding resist film 74 Color resist film

Claims (14)

A display device having an array substrate on which switching elements are formed for each pixel, and a counter substrate disposed to face the array substrate,
The array substrate is
An array substrate body;
A color filter layer provided on the array substrate main body and including a plurality of colored layers corresponding to the pixels, and a light-shielding layer located between the colored layers;
A switching element layer provided on an upper layer of the color filter layer;
A display device comprising: The display device according to claim 1,
The material constituting the color filter layer has heat resistance to a temperature of 400 to 600 ° C. The display device according to claim 1 or 2,
The display device, wherein the colored layer is made of a material that does not contain a resin. The display device according to any one of claims 1 to 3,
The display device, wherein the light shielding layer is made of a material not containing a resin. In the display device according to any one of claims 1 to 4,
A display device, wherein a liquid crystal layer is provided between the array substrate and the counter substrate. A method for manufacturing a display device according to any one of claims 1 to 5,
A method of manufacturing a display device, comprising: forming a color filter layer on an array substrate body; and forming a switching element layer including a switching element on the color filter layer to obtain an array substrate. In the manufacturing method of the display device according to claim 6,
After forming a color resist film containing a colorant and a resin on the array substrate body, and forming a light shielding resist film containing a light shielding agent and a resin,
A method of manufacturing a display device, wherein the color resist film and the light-shielding resist film are baked to remove a resin in each resist film to form a colored layer and a light-shielding layer to provide a color filter layer. In the manufacturing method of the display device according to claim 7,
Baking of the color resist film and the light shielding resist film is performed at a temperature higher than a heat resistance temperature of a resin included in the color resist film and a heat resistance temperature of a resin included in the light shielding resist film. Method. In the manufacturing method of the display device according to claim 7 or 8,
A manufacturing method of a display device, wherein the colored layer obtained by baking the color resist film is made of a material not containing a resin. In the manufacturing method of the display device according to any one of claims 7 to 9,
The method for manufacturing a display device, wherein the light shielding layer obtained by baking the light shielding resist film is made of a material not containing a resin. In the manufacturing method of the display device according to any one of claims 7 to 10,
A method for manufacturing a display device, wherein the color resist film and the light-shielding resist film are formed by photolithography. In the manufacturing method of the display device according to any one of claims 7 to 10,
A method of manufacturing a display device, wherein the color resist film is formed using an ink-jet method, and the light-shielding resist film is formed using photolithography. In the manufacturing method of the display device according to any one of claims 7 to 10,
A method for manufacturing a display device, wherein the color resist film and the light-shielding resist film are formed using an inkjet method. In the manufacturing method of the display device according to any one of claims 6 to 13,
A method for manufacturing a display device, comprising: forming a liquid crystal layer so as to be sandwiched between the array substrate and the counter substrate.

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