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JP2011204861A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device Download PDF

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Publication number
JP2011204861A
JP2011204861A JP2010070097A JP2010070097A JP2011204861A JP 2011204861 A JP2011204861 A JP 2011204861A JP 2010070097 A JP2010070097 A JP 2010070097A JP 2010070097 A JP2010070097 A JP 2010070097A JP 2011204861 A JP2011204861 A JP 2011204861A
Authority
JP
Japan
Prior art keywords
wire
bonding
lead frame
wire bonding
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010070097A
Other languages
Japanese (ja)
Inventor
Katsuhiko Kitagawa
勝彦 北川
Toshimori Negishi
寿守 根岸
Takashi Nagashima
隆司 永島
Satoshi Abe
敏 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
On Semiconductor Trading Ltd
Original Assignee
On Semiconductor Trading Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by On Semiconductor Trading Ltd filed Critical On Semiconductor Trading Ltd
Priority to JP2010070097A priority Critical patent/JP2011204861A/en
Publication of JP2011204861A publication Critical patent/JP2011204861A/en
Pending legal-status Critical Current

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To solve the problem with a conventional method of manufacturing a semiconductor device, wherein a gold wire is used as a thin metal wire which causes difficulty in reducing a material cost.SOLUTION: In the method of manufacturing the semiconductor device, a copper wire is used for a thin metal wire so as to reduce the material cost. Moreover, in operating or re-operating a wire bonding device, a copper wire 20 at a part which is disposed outside the device and in risk of oxidation is wire-bonded to a waste bonding region 11 of a lead frame 1. By this manufacturing method, an initial ball 24 in a good state is formed at the tip of a capillary 21, and a poor connection is suppressed.

Description

本発明は、銅線を用いてワイヤーボンディングされる半導体装置の製造方法に関する。   The present invention relates to a method for manufacturing a semiconductor device that is wire-bonded using a copper wire.

従来の半導体装置の製造方法の一実施例として、下記の製造方法が知られている。図７（Ａ）及び（Ｂ）は、従来の半導体装置の製造方法を説明するための断面図である。   As an example of a conventional method for manufacturing a semiconductor device, the following manufacturing method is known. 7A and 7B are cross-sectional views for explaining a conventional method for manufacturing a semiconductor device.

先ず、図７（Ａ）に示す如く、リードフレームのダイパッド５１上に半導体素子５２を固着した後、リードフレームをワイヤーボンディング装置に設置する。半導体素子５２の電極パッド５３を約２００℃に加熱し、キャピラリ５４が電極パッド５３上へと移動する。そして、超音波振動併用の熱圧着技術により、キャピラリ５４の先端に形成された金属ボールを電極パッド５３へと接続する。一般にこれをボールボンディングと言う。   First, as shown in FIG. 7A, after fixing the semiconductor element 52 on the die pad 51 of the lead frame, the lead frame is set in a wire bonding apparatus. The electrode pad 53 of the semiconductor element 52 is heated to about 200 ° C., and the capillary 54 moves onto the electrode pad 53. Then, the metal ball formed at the tip of the capillary 54 is connected to the electrode pad 53 by a thermocompression bonding technique using ultrasonic vibration. This is generally called ball bonding.

次に、図７（Ｂ）に示す如く、キャピラリ５４が外部リード５６の先端部上方へ移動し、外部リード５６のインナーリード部分に対し金属細線５５を所望の荷重にて押し付ける。このとき、外部リード５６を約２００℃に加熱し、外部リード５６に対し超音波振動併用の熱圧着技術により金属細線５５を接続する。その後、ワイヤークランパー５７を閉じた状態にてキャピラリ５４が上昇し、金属細線５５を外部リード５６の接続箇所にて破断する。一般にこれをステッチボンディングと言う。   Next, as shown in FIG. 7B, the capillary 54 moves above the tip of the external lead 56 and presses the metal thin wire 55 against the inner lead portion of the external lead 56 with a desired load. At this time, the external lead 56 is heated to about 200 ° C., and the fine metal wire 55 is connected to the external lead 56 by a thermocompression bonding technique using ultrasonic vibration. Thereafter, the capillary 54 rises with the wire clamper 57 closed, and the fine metal wire 55 is broken at the connection point of the external lead 56. This is generally called stitch bonding.

そして、図７（Ａ）及び（Ｂ）にて説明したワイヤーボンディング作業を繰り返すことで、半導体素子５２の全ての電極パッド５３と外部リード５６とを金属細線５５にて電気的に接続する（例えば、特許文献１参照。）。   Then, by repeating the wire bonding operation described with reference to FIGS. 7A and 7B, all the electrode pads 53 of the semiconductor element 52 and the external leads 56 are electrically connected by the thin metal wires 55 (for example, , See Patent Document 1).

従来のワイヤーボンディング装置の一実施例として、下記の装置が知られている。そして、図８に示すワイヤーボンディング装置では、高価な金線を用いることで嵩むコストを低減するために、金線に換えて半田ワイヤーを使用するものである。図８（Ｂ）は、図８（Ａ）に示すワイヤーボンディング装置のＢ−Ｂ線方向の断面図である。   As an example of a conventional wire bonding apparatus, the following apparatus is known. In the wire bonding apparatus shown in FIG. 8, a solder wire is used instead of a gold wire in order to reduce the cost of using an expensive gold wire. FIG. 8B is a cross-sectional view of the wire bonding apparatus shown in FIG.

先ず、図８（Ａ）に示すワイヤーボンディング装置６１では、リードフレーム６２の長手方向に沿ってヒートブロック体６３が延在する。カバー体６４が、ヒートブロック体６３の上面を覆うように配置され、ヒートブロック体６３とカバー体６４との間には、リードフレーム６２が移動するトンネル部６９（図８（Ｂ）参照）が形成される。そして、カバー体６４には、トンネル部６９へと連通する開口孔６５が設けられ、開口孔６５の上方には、半田ワイヤー６６を挿通したキャピラリ６７が配置される。キャピラリ６７の近傍には、スパーク式のトーチ６８が配置される。この構造により、キャピラリ６７が、開口孔６５を介してトンネル部６９内に移動し、トンネル部６９内のリードフレーム６２にワイヤーボンディングが行われる。   First, in the wire bonding apparatus 61 shown in FIG. 8A, the heat block body 63 extends along the longitudinal direction of the lead frame 62. A cover body 64 is disposed so as to cover the upper surface of the heat block body 63, and a tunnel portion 69 (see FIG. 8B) through which the lead frame 62 moves is disposed between the heat block body 63 and the cover body 64. It is formed. The cover body 64 is provided with an opening hole 65 communicating with the tunnel portion 69, and a capillary 67 through which the solder wire 66 is inserted is disposed above the opening hole 65. A spark type torch 68 is arranged in the vicinity of the capillary 67. With this structure, the capillary 67 moves into the tunnel portion 69 through the opening hole 65, and wire bonding is performed on the lead frame 62 in the tunnel portion 69.

次に、図８（Ｂ）に示す如く、ヒートブロック体６３には、トンネル部６９内へと酸化抑制ガスを供給するためのガス供給路７０が配置され、ワイヤーボンディング装置６１の稼動時には、トンネル部６９内は酸化抑制ガスにより充填される。そして、ヒートブロック体６３に内蔵されたヒータにより加熱された酸化抑制ガスは、カバー体６４の開口孔６５から上方へと噴出する。前述したように、キャピラリ６７は、開口孔６５の上方に配置されることで、キャピラリ６７周辺は酸化抑制ガスの雰囲気となる。そして、キャピラリ６７の先端から導出される半田ワイヤー６６の酸化が抑制される。この状態にて、キャピラリ６７の先端に半田ボール７１が形成され、半田ボール７１表面に酸化被膜が形成されることが抑止される。そして、半田ボールは、リードフレーム６２上に固着された半導体素子のパッド電極に対して確実に接合される（例えば、特許文献２参照。）。   Next, as shown in FIG. 8B, the heat block 63 is provided with a gas supply path 70 for supplying an oxidation-suppressing gas into the tunnel portion 69. The inside of the part 69 is filled with an oxidation inhibiting gas. The oxidation-suppressing gas heated by the heater built in the heat block body 63 is ejected upward from the opening hole 65 of the cover body 64. As described above, the capillary 67 is arranged above the opening hole 65, so that the vicinity of the capillary 67 is in an atmosphere of oxidation-suppressing gas. And the oxidation of the solder wire 66 led out from the tip of the capillary 67 is suppressed. In this state, the solder ball 71 is formed at the tip of the capillary 67 and the formation of an oxide film on the surface of the solder ball 71 is suppressed. The solder ball is securely bonded to the pad electrode of the semiconductor element fixed on the lead frame 62 (see, for example, Patent Document 2).

特開平７−２９９４３号公報（第４−５頁、第１図）Japanese Patent Laid-Open No. 7-29943 (page 4-5, FIG. 1) 特開平５−２３５０８０号公報（第２−３頁、第１−２図）JP-A-5-235080 (page 2-3, Fig. 1-2)

先ず、図７を用いて前述したように、ワイヤーボンディング工程では、金属細線５５は、ワイヤーボンディング作業中は高温状態下に置かれる。このとき、従前の技術では、金属細線５５として金線を用い、インナーリードには銀メッキが施されることで、特に、酸化の問題は重要視されなかった。しかしながら、金線は銅線と比較して材料費が高く、原価コストを引き上げる問題がある。更に、金線は銅線よりも比抵抗が大きいため電流容量が小さく、大電流を扱う半導体素子では金線の使用量が増大し、材料コストが余分に掛かるという問題が発生する。   First, as described above with reference to FIG. 7, in the wire bonding process, the fine metal wire 55 is placed in a high temperature state during the wire bonding operation. At this time, in the conventional technique, a gold wire is used as the thin metal wire 55 and the inner lead is subjected to silver plating, so that the oxidation problem is not particularly regarded as important. However, the gold wire has a higher material cost than the copper wire, and there is a problem of raising the cost. Furthermore, since the specific resistance of the gold wire is larger than that of the copper wire, there is a problem that the current capacity is small, and the amount of the gold wire used is increased in a semiconductor element handling a large current, resulting in an extra material cost.

一方、図８を用いて前述したように、半田ワイヤー６６が用いられることで、金線の使用によりコストが嵩むという問題が解決される。その一方で、半田ワイヤー６６は酸化し易いため、半田ワイヤー６６を使用した場合、キャピラリ６７の先端から露出する半田ワイヤー６６を加熱すると、その表面が直ぐに酸化し、半田ボールが形成され難いという問題が発生する。   On the other hand, as described above with reference to FIG. 8, the use of the solder wire 66 solves the problem of increased cost due to the use of a gold wire. On the other hand, since the solder wire 66 is easily oxidized, when the solder wire 66 is used, when the solder wire 66 exposed from the tip of the capillary 67 is heated, its surface is immediately oxidized and it is difficult to form a solder ball. Will occur.

この酸化問題を解決するために、図８（Ｂ）に示す如く、カバー体６４の開口孔６５から噴出する酸化抑制ガスの雰囲気の領域にて、キャピラリ６７とトーチ６８との間で放電を行い、半田ボール７１を形成することで、良好な半田ボール７１が形成される。   In order to solve this oxidation problem, as shown in FIG. 8B, discharge is performed between the capillary 67 and the torch 68 in the region of the atmosphere of the oxidation-inhibiting gas ejected from the opening hole 65 of the cover body 64. By forming the solder ball 71, a good solder ball 71 is formed.

しかしながら、ワイヤーボンディング装置６１の稼動開始時や再稼動開始時には、キャピラリ６７周辺が酸化抑制ガスの雰囲気にて満たされ難く、良好な半田ボール７１が形成され難い。そして、良好でない半田ボール７１を用いることで、半導体素子のパッド電極に対して接続不良が発生するという問題がある。   However, when the wire bonding apparatus 61 is started or restarted, the vicinity of the capillary 67 is hardly filled with the atmosphere of the oxidation-suppressing gas, and a good solder ball 71 is difficult to be formed. Further, there is a problem that poor connection occurs with respect to the pad electrode of the semiconductor element by using an unsatisfactory solder ball 71.

更に、ワイヤーボンディング装置６１の稼動開始時や再稼動開始時には、キャピラリ６７周辺の酸化抑制ガスの雰囲気が十分でないため、キャピラリ６７の先端に形成された半田ボール７１の表面の少なくとも一部に酸化被膜が形成される場合がある。この場合、半田ボール７１は、半導体素子のパッド電極に対して接続されるため、製造工程時の品質検査では接続不良として判定されず、良品として出荷される。しかしながら、出荷後にセット製品に組み込まれ、製品化された後に、その酸化被膜の部分から腐食が進み、その接続領域が剥離することで、セット製品が不良化するという問題がある。   Furthermore, when the wire bonding apparatus 61 is started or restarted, the atmosphere of the oxidation-suppressing gas around the capillary 67 is not sufficient, so that an oxide film is formed on at least part of the surface of the solder ball 71 formed at the tip of the capillary 67 May be formed. In this case, since the solder ball 71 is connected to the pad electrode of the semiconductor element, it is not determined as a connection failure in the quality inspection during the manufacturing process, and is shipped as a non-defective product. However, after being shipped into a set product and being commercialized, there is a problem that corrosion progresses from the portion of the oxide film and the connection region is peeled off, resulting in a defective set product.

前述した各事情に鑑みて成されたものであり、本発明の半導体装置の製造方法では、アイランドと、前記アイランドの周囲に配置された複数のリードと、前記アイランドから延在された吊りリードとを有する搭載部が複数形成されたリードフレームを準備し、前記アイランド上に半導体素子を固着し、前記半導体素子の電極パッドと前記リードとを銅線によりワイヤーボンディングした後、前記搭載部を樹脂で被覆し、樹脂パッケージを形成する半導体装置の製造方法において、前記ワイヤーボンディング領域に不活性ガスを供給しながら、前記搭載部近傍に配置された前記リードフレームの捨てボンディング領域に対してワイヤーボンディングを行った後、連続して前記搭載部の前記電極パッドと前記リードとを前記銅線によりワイヤーボンディングすることを特徴とする。   In view of the circumstances described above, the semiconductor device manufacturing method according to the present invention includes an island, a plurality of leads disposed around the island, and a suspension lead extending from the island. A lead frame having a plurality of mounting portions formed thereon is prepared, a semiconductor element is fixed on the island, the electrode pads of the semiconductor elements and the leads are wire-bonded with a copper wire, and the mounting portion is made of resin. In the method of manufacturing a semiconductor device for covering and forming a resin package, wire bonding is performed on a discarded bonding region of the lead frame disposed in the vicinity of the mounting portion while supplying an inert gas to the wire bonding region. After that, the electrode pad and the lead of the mounting portion are continuously connected to the wire board by the copper wire. Characterized in that it Funding.

本発明では、銅線を用いてワイヤーボンディングが行われることで、金線が用いられる場合と比較して材料コストが低減される。   In this invention, material cost is reduced compared with the case where a gold wire is used by performing wire bonding using a copper wire.

また、本発明では、搭載部へのワイヤーボンディング前に捨てボンディング領域に対してワイヤーボンディングを行うことで、良好なイニシャルボールが形成され、接続不良が抑止される。   Moreover, in this invention, a good initial ball is formed by performing wire bonding to the abandoned bonding area before wire bonding to the mounting portion, and poor connection is suppressed.

また、本発明では、ワイヤーボンディング装置の稼動時または再稼動時の最初に行われることで、特に、ワイヤーボンディング装置外に露出し、酸化し易い部分の銅線が除去される。   Further, in the present invention, the copper wire that is exposed to the outside of the wire bonding apparatus and easily oxidizes is removed by being performed at the beginning of operation or re-operation of the wire bonding apparatus.

また、本発明では、捨てボンディング領域に対してワイヤーボンディングを複数回行うことで、個々の銅線の高さを低くし、リードフレーム搬送時の接触による銅線の剥離が防止される。   Further, in the present invention, by performing wire bonding a plurality of times on the discarded bonding region, the height of each copper wire is lowered, and peeling of the copper wire due to contact during lead frame conveyance is prevented.

また、本発明では、銅線の酸化により捨てボンディング領域に接続しない銅線を除去することで、その銅線が搭載部へ飛散することが防止される。   Further, in the present invention, the copper wire that is discarded and not connected to the bonding region is removed by oxidation of the copper wire, thereby preventing the copper wire from being scattered to the mounting portion.

また、本発明では、捨てボンディング領域が樹脂モールド工程前に打ち抜かれることで、捨てボンディング領域の銅線が飛散することが防止される。   Further, in the present invention, the discarded bonding area is punched before the resin molding process, so that the copper wire in the discarded bonding area is prevented from being scattered.

本発明の実施の形態における半導体装置の製造方法を説明する（Ａ）平面図、（Ｂ）平面図である。It is (A) top view and (B) top view explaining the manufacturing method of the semiconductor device in embodiment of this invention. 本発明の実施の形態における半導体装置の製造方法を説明する（Ａ）平面図、（Ｂ）断面図である。It is (A) top view and (B) sectional drawing explaining the manufacturing method of the semiconductor device in embodiment of this invention. 本発明の実施の形態における半導体装置の製造方法を説明する（Ａ）断面図、（Ｂ）平面図、（Ｃ）断面図である。1A is a cross-sectional view, FIG. 1B is a plan view, and FIG. 1C is a cross-sectional view illustrating a method for manufacturing a semiconductor device in an embodiment of the present invention. 本発明の実施の形態における半導体装置の製造方法を説明する（Ａ）断面図、（Ｂ）断面図、（Ｃ）断面図である。1A is a cross-sectional view, FIG. 1B is a cross-sectional view, and FIG. 1C is a cross-sectional view illustrating a method for manufacturing a semiconductor device in an embodiment of the present invention. 本発明の実施の形態における半導体装置の製造方法を説明する（Ａ）平面図、（Ｂ）断面図である。It is (A) top view and (B) sectional drawing explaining the manufacturing method of the semiconductor device in embodiment of this invention. 本発明の実施の形態における半導体装置の製造方法を説明する（Ａ）斜視図、（Ｂ）斜視図、（Ｃ）断面図である。1A is a perspective view, FIG. 2B is a perspective view, and FIG. 従来の実施の形態における半導体装置の製造方法を説明する（Ａ）断面図、（Ｂ）断面図である。It is (A) sectional drawing and (B) sectional drawing explaining the manufacturing method of the semiconductor device in conventional embodiment. 従来の実施の形態における半導体装置の製造方法を説明する（Ａ）斜視図、（Ｂ）断面図である。It is (A) perspective view and (B) sectional drawing explaining the manufacturing method of the semiconductor device in conventional embodiment.

以下に、本発明の半導体装置の製造方法について説明する。図１（Ａ）及び（Ｂ）は、リードフレームを説明する平面図である。図２（Ａ）は、ワイヤーボンディング装置のクランパーを説明する平面図である。図２（Ｂ）、図３（Ａ）〜図３（Ｃ）及び図４（Ａ）〜図４（Ｃ）は、ワイヤーボンディング工程を説明する図である。図５（Ａ）は、樹脂モールド工程を説明する平面図である。図５（Ｂ）は、ダイシング工程を説明する断面図である。図６（Ａ）〜図６（Ｃ）は、本発明の製造方法により形成された半導体装置を説明する図である。   Below, the manufacturing method of the semiconductor device of this invention is demonstrated. 1A and 1B are plan views for explaining a lead frame. FIG. 2A is a plan view for explaining a clamper of the wire bonding apparatus. FIG. 2B, FIG. 3A to FIG. 3C, and FIG. 4A to FIG. 4C are diagrams illustrating a wire bonding process. FIG. 5A is a plan view illustrating a resin molding process. FIG. 5B is a cross-sectional view illustrating the dicing process. 6A to 6C are diagrams illustrating a semiconductor device formed by the manufacturing method of the present invention.

先ず、図１（Ａ）に示す如く、例えば、銅を主材料とするリードフレーム１を準備する。リードフレーム１としては、Ｆｅ−Ｎｉを主材料とするフレームの場合でも良く、他の金属材料から成る場合でも良い。このリードフレーム１には、一点鎖線で示すように、複数の搭載部２が形成される。リードフレーム１の長手方向（紙面Ｘ軸方向）は、スリット３により一定間隔に区切られる。そして、スリット３にて区切られたリードフレーム１の１区間には、例えば、４つの搭載部２の集合から成る１つの集合ブロックが形成される。そして、この集合ブロックが、リードフレーム１の長手方向に複数形成される。また、リードフレーム１の長手方向には、その上下端部領域にインデックス孔４が一定の間隔で設けられ、各工程での位置決めに用いられる。   First, as shown in FIG. 1A, for example, a lead frame 1 mainly made of copper is prepared. The lead frame 1 may be a frame mainly composed of Fe—Ni, or may be composed of another metal material. A plurality of mounting portions 2 are formed on the lead frame 1 as indicated by a one-dot chain line. The longitudinal direction of the lead frame 1 (the X-axis direction on the paper surface) is divided by the slit 3 at regular intervals. In one section of the lead frame 1 delimited by the slits 3, for example, one collective block made up of a set of four mounting portions 2 is formed. A plurality of collective blocks are formed in the longitudinal direction of the lead frame 1. In the longitudinal direction of the lead frame 1, index holes 4 are provided in the upper and lower end regions at regular intervals, and are used for positioning in each step.

次に、搭載部２は、主に、アイランド５と、アイランド５の４隅を支持する吊りリード６と、アイランド５の４側辺の近傍に位置する複数のリード７と、複数のリード７を支持するタイバー８とから構成される。そして、吊りリード６は、アイランド５の４つのコーナー部から延在し、タイバー８の交差する支持領域９と連結する。支持領域９は、リードフレーム１と一体となり、アイランド５がリードフレーム１に支持される。   Next, the mounting portion 2 mainly includes an island 5, a suspension lead 6 that supports four corners of the island 5, a plurality of leads 7 that are located in the vicinity of the four sides of the island 5, and a plurality of leads 7. The tie bar 8 is supported. The suspension leads 6 extend from the four corners of the island 5 and are connected to the support region 9 where the tie bars 8 intersect. The support region 9 is integrated with the lead frame 1, and the island 5 is supported by the lead frame 1.

次に、点線１０にて示すように、集合ブロック間のスリット３上方には、捨てボンディング領域１１が配置される。詳細は後述するが、ワイヤーボンディング工程では、集合ブロック毎に連続してワイヤーボンディングが行われるが、最初に、捨てボンディング領域１１にボールボンディングが行われる。この製造方法により、酸化していない良好な銅線を用いてワイヤーボンディングが行われ、接続不良が抑止される。尚、捨てボンディング領域１１は、スリット３間やスリット３下方に配置される場合でも良い。   Next, as shown by a dotted line 10, a discarded bonding region 11 is disposed above the slit 3 between the assembly blocks. Although details will be described later, in the wire bonding step, wire bonding is continuously performed for each assembly block. First, ball bonding is performed in the discarded bonding region 11. By this manufacturing method, wire bonding is performed using a good copper wire that is not oxidized, and connection failure is suppressed. The discarded bonding region 11 may be disposed between the slits 3 or below the slits 3.

次に、図１（Ｂ）に示す如く、リードフレーム１の搭載部２毎に、アイランド５の上面に半導体素子１２を固着する。そして、接着材としては、半田、導電性ペースト等の導電性接着材またはエポキシ樹脂等の絶縁性接着材が用いられる。このとき、加熱機構が組み込まれたダイボンド装置が用いられ、その作業領域内が、例えば、２５０〜２６０℃程度に保たれることで、その作業性が向上される。そして、ダイボンド装置の作業領域内が、不活性ガスにより充填されることで、リードフレーム１が、長時間に渡り高温状態下に配置されるが、その酸化が防止される。   Next, as shown in FIG. 1B, the semiconductor element 12 is fixed to the upper surface of the island 5 for each mounting portion 2 of the lead frame 1. As the adhesive, a conductive adhesive such as solder or conductive paste or an insulating adhesive such as epoxy resin is used. At this time, a die-bonding apparatus in which a heating mechanism is incorporated is used, and the workability is improved by maintaining the inside of the work area at, for example, about 250 to 260 ° C. The inside of the work area of the die bonding apparatus is filled with an inert gas, so that the lead frame 1 is placed in a high temperature state for a long time, but its oxidation is prevented.

次に、図２（Ａ）及び図２（Ｂ）を用いてワイヤーボンディング装置について説明する。   Next, a wire bonding apparatus will be described with reference to FIGS. 2 (A) and 2 (B).

図２（Ａ）に示すように、ワイヤーボンディング装置の載置台１３上にリードフレーム１が配置され、リードフレーム１上方を覆うようにクランパー１４が配置される。リードフレーム１は、載置台１３とクランパー１４との間の空間部をその長手方向に移動し、各搭載部２毎にワイヤーボンディングが行われる。そして、クランパー１４には、前述したリードフレーム１の集合ブロック（４つの搭載部２から成るブロック）に対応した４つの開口部１５と、捨てボンディング領域１１に対応した開口部１６が形成される。開口部１５、１６は、クランパー１４を貫通し、前述した空間部へと連通し、開口部１５、１６の側面１７、１８は傾斜面となる。   As shown in FIG. 2A, the lead frame 1 is disposed on the mounting table 13 of the wire bonding apparatus, and the clamper 14 is disposed so as to cover the top of the lead frame 1. The lead frame 1 moves in the longitudinal direction in the space between the mounting table 13 and the clamper 14, and wire bonding is performed for each mounting portion 2. The clamper 14 is formed with four openings 15 corresponding to the above-described aggregated block of the lead frame 1 (a block composed of the four mounting portions 2) and an opening 16 corresponding to the discarded bonding region 11. The openings 15 and 16 penetrate the clamper 14 and communicate with the above-described space, and the side surfaces 17 and 18 of the openings 15 and 16 are inclined surfaces.

図２（Ｂ）に示すように、ワイヤーボンディング領域の載置台１３は突出し、その突出領域上にリードフレーム１の搭載部２や捨てボンディング領域１１が配置される。そして、クランパー１４が、ワイヤーボンディング時に下降し、リードフレーム１は、クランパー１４と載置台１３との間に押圧固定される。また、載置台１３の突出領域には加熱機構１９が内蔵され、リードフレーム１は、例えば、２５０〜２６０℃程度に加熱された状態にてワイヤーボンディングが行われる。   As shown in FIG. 2B, the mounting table 13 in the wire bonding area protrudes, and the mounting portion 2 of the lead frame 1 and the discard bonding area 11 are arranged on the protruding area. Then, the clamper 14 is lowered during wire bonding, and the lead frame 1 is pressed and fixed between the clamper 14 and the mounting table 13. Moreover, the heating mechanism 19 is built in the protrusion area | region of the mounting base 13, and the wire bonding is performed in the state which the lead frame 1 was heated by about 250-260 degreeC, for example.

次に、クランパー１４の開口部１５は、１つの集合ブロックの搭載部２毎に配置され、アイランド５の周囲の複数のリード７や吊りリード６は、クランパー１４により確実に押圧固定される。銅線２０は金線と比較して硬いが、延性を有するため、ボールボンディング時の荷重（キャピラリ２１から加えられる荷重）が金線よりも大きくなるが、ボンディング時の荷重の逃げが防止される。そして、銅線２０はリード７上に確実に接着され、接続不良が防止される。   Next, the opening 15 of the clamper 14 is arranged for each mounting portion 2 of one aggregate block, and the plurality of leads 7 and the suspension leads 6 around the island 5 are securely pressed and fixed by the clamper 14. Although the copper wire 20 is harder than the gold wire but has ductility, the load at the time of ball bonding (the load applied from the capillary 21) is larger than that of the gold wire, but the escape of the load at the time of bonding is prevented. . And the copper wire 20 is reliably adhere | attached on the lead 7, and a connection failure is prevented.

次に、クランパー１４の開口部１５近傍には、ノズル２２が配置され、ノズル２２から送風された不活性ガスは、開口部１５内へと吹き込む。銅線２０の径が４５μｍの場合には、例えば、１．９リットル／分の窒素ガス（若干の水素ガスが含まれる）が用いられる。そして、銅線２０は、高温状態の作業領域内に置かれることで酸化し易い状態となるが、上記不活性ガスの存在により銅線２０の酸化が防止される。図示したように、開口部１５の側面１７、１８が、上方側へと広がる傾斜面となり、作業領域が広がるだけでなく、不活性ガスがワイヤーボンディング領域へと流れ込み易くなる。   Next, a nozzle 22 is disposed in the vicinity of the opening 15 of the clamper 14, and the inert gas blown from the nozzle 22 blows into the opening 15. When the diameter of the copper wire 20 is 45 μm, for example, 1.9 liter / min of nitrogen gas (including some hydrogen gas) is used. And although the copper wire 20 will be in the state which is easy to oxidize by putting in the work area | region of a high temperature state, the oxidation of the copper wire 20 is prevented by presence of the said inert gas. As shown in the figure, the side surfaces 17 and 18 of the opening 15 become inclined surfaces that expand upward, and not only the work area expands, but also the inert gas easily flows into the wire bonding area.

尚、集合ブロック毎にワイヤーボンディングが行われ、クランパー１４が上下方向へと可動することで、リードフレーム１が、ワイヤーボンディング装置の空間部を移動し、また、リードフレーム１が、載置台１３上に押圧固定される。このとき、前述した不活性ガスが、クランパー１４の動作に合わせて空間部へと流れ込むことで、空間部内を移動するリードフレーム１の酸化が抑止される。また、図示していないが、クランパー１４に不活性ガスを送り込むパイプを配設し、常時、リードフレーム１が移動する空間部へと不活性ガスを流し込む構造とする場合でも良い。   Note that wire bonding is performed for each collective block, and the clamper 14 moves up and down, so that the lead frame 1 moves in the space of the wire bonding apparatus, and the lead frame 1 is placed on the mounting table 13. It is pressed and fixed to. At this time, the inert gas described above flows into the space portion in accordance with the operation of the clamper 14, so that the oxidation of the lead frame 1 moving in the space portion is suppressed. Although not shown, a pipe for feeding inert gas to the clamper 14 may be provided so that the inert gas is always flowed into the space where the lead frame 1 moves.

次に、図３（Ａ）〜図３（Ｃ）を用いてイニシャルボール２４を形成する方法を説明する。   Next, a method for forming the initial ball 24 will be described with reference to FIGS. 3 (A) to 3 (C).

図３（Ａ）に示す如く、イニシャルボール形成に用いられる形成部２３は、セラミック等の無機材料から成り、外形形状は紙面上にて横方向に細長い直方体形状となる。形成部２３の内部には、点線にて示すように、その長手方向に内部を貫通して設けた導通孔２５と、その厚み方向に円形に貫通して設けた貫通孔２６が形成される。そして、導通孔２５と貫通孔２６とは連通する。   As shown in FIG. 3A, the formation portion 23 used for initial ball formation is made of an inorganic material such as ceramic, and the outer shape is a rectangular parallelepiped shape that is long in the horizontal direction on the paper surface. Inside the forming portion 23, as indicated by a dotted line, a conduction hole 25 provided through the inside in the longitudinal direction and a through hole 26 provided in a circular manner in the thickness direction are formed. The conduction hole 25 and the through hole 26 communicate with each other.

図示したように、導通孔２５の内部にはトーチ２７が配置され、トーチ２７の先端部は貫通孔２６の内部に露出する。また、トーチ２７の直径は、導通孔２５の内径よりも小さくなる。そして、矢印２８にて示すように、トーチ２７と導通孔２５との間の間隙を利用して、前述した不活性ガスが、貫通孔２６へと供給される。   As shown in the figure, a torch 27 is disposed inside the conduction hole 25, and the tip of the torch 27 is exposed inside the through hole 26. Further, the diameter of the torch 27 is smaller than the inner diameter of the conduction hole 25. Then, as shown by an arrow 28, the above-described inert gas is supplied to the through hole 26 using the gap between the torch 27 and the conduction hole 25.

図３（Ｂ）に示す如く、貫通孔２６は、一点鎖線にて示すキャピラリ２１の外形よりも大きく設計される。そして、ワイヤーボンディングを行う際には、キャピラリ２１は、貫通孔２６を経由し、形成部２３と接触しないように上下方向に可動する。   As shown in FIG. 3B, the through hole 26 is designed to be larger than the outer shape of the capillary 21 indicated by the alternate long and short dash line. When wire bonding is performed, the capillary 21 moves up and down via the through hole 26 so as not to contact the forming portion 23.

図３（Ｃ）に示す如く、キャピラリ２１の上方に配置されたワイヤークランパー２９が開放し、キャピラリ２１の先端からは所望の長さの銅線２０が導出し、キャピラリ２１近傍に位置するトーチ２７から放電され、キャピラリ２１の先端にはイニシャルボール（銅ボール）２４が形成される。このとき、矢印２８にて示すように、導通孔２５を経由して不活性ガスが貫通孔２６内に供給されているため、銅線２０の酸化が防止され、球形状に近い理想的な形状のイニシャルボール２４が形成される。また、イニシャルボール２４が形成された後も、イニシャルボール２４の表面に酸化被膜が形成されることが抑止される。そして、出荷後にセット製品に組み込まれ、製品化された後に酸化被膜に起因する接続不良を招くことが防止される。   As shown in FIG. 3C, the wire clamper 29 disposed above the capillary 21 is opened, and a copper wire 20 having a desired length is led out from the tip of the capillary 21, and the torch 27 located in the vicinity of the capillary 21. And an initial ball (copper ball) 24 is formed at the tip of the capillary 21. At this time, as indicated by an arrow 28, since the inert gas is supplied into the through-hole 26 through the conduction hole 25, the copper wire 20 is prevented from being oxidized and has an ideal shape close to a spherical shape. The initial ball 24 is formed. Further, even after the initial ball 24 is formed, the formation of an oxide film on the surface of the initial ball 24 is suppressed. Then, it is prevented from causing a connection failure due to the oxide film after being incorporated into a set product after shipment and commercialized.

次に、図４（Ａ）〜図４（Ｃ）を用いてワイヤーボンディング工程について説明する。尚、その説明の際に図２及び図３を適宜参照する。   Next, a wire bonding process is demonstrated using FIG. 4 (A)-FIG. 4 (C). In the description, FIGS. 2 and 3 will be referred to as appropriate.

先ず、図２（Ａ）及び図２（Ｂ）を用いて説明したように、ワイヤーボンディング装置の載置台１３上にリードフレーム１を配置し、ワイヤーボンディング領域までリードフレーム１を移動させ、クランパー１４を用いて載置台１３の突出領域上にリードフレーム１を押圧固定する。そして、ノズル２２から不活性ガスを送風し、クランパー１４の開口部１５内及びその周辺領域を不活性ガスにて満たされた状態とする。   First, as described with reference to FIGS. 2A and 2B, the lead frame 1 is placed on the mounting table 13 of the wire bonding apparatus, the lead frame 1 is moved to the wire bonding area, and the clamper 14 is moved. Is used to press and fix the lead frame 1 on the protruding region of the mounting table 13. Then, an inert gas is blown from the nozzle 22 so that the inside of the opening 15 of the clamper 14 and its peripheral region are filled with the inert gas.

一方、図３（Ａ）〜図３（Ｃ）を用いて説明したように、ワイヤーボンディング装置の稼動開始時や再稼動開始時には、ノズル２２から不活性ガスを送風され始めた直後であり、クランパー１４の開口部１５内及びその周辺領域は、十分な量の不活性ガスにて満たされていない状態である。同様に、形成部２３の貫通孔２６に対して不活性ガスが供給され始めた直後であり、形成部２３周辺も十分な量の不活性ガスにて満たされていない状態である。そのため、キャピラリ２１の先端から導出された銅線２０を含め、ワイヤーボンディング装置外へ露出した銅線２０は酸化している恐れがある。   On the other hand, as described with reference to FIGS. 3A to 3C, at the start of operation of the wire bonding apparatus or at the start of re-operation, immediately after the inert gas starts to be blown from the nozzle 22, the clamper The 14 openings 15 and the surrounding area are not filled with a sufficient amount of inert gas. Similarly, immediately after the inert gas starts to be supplied to the through hole 26 of the formation part 23, the periphery of the formation part 23 is not filled with a sufficient amount of the inert gas. Therefore, the copper wire 20 exposed to the outside of the wire bonding apparatus including the copper wire 20 led out from the tip of the capillary 21 may be oxidized.

そこで、図４（Ａ）に示すように、ワイヤーボンディング装置では、先ず、ワイヤーボンディング装置外へ露出し、酸化している恐れがある部分の銅線２０を用いて、キャピラリ２１が、開口部１６を介してリードフレーム１の捨てボンディング領域１１に対して、連続してボールボンディングを行う。このとき、ワイヤークランパー２９（図３（Ｃ）参照）にて銅線２０を挟持した状態にてボールボンディングを行うことで、イニシャルボール２４が、捨てボンディング領域１１に接続した後、キャピラリ２１が上方へ移動する際に銅線２０が切断される。そして、捨てボンディング領域１１上の銅線３０の高さＴ１は、図４（Ｃ）に示す銅線３３のループ頂までの高さＴ２よりも低くなる。この製造方法により、リードフレーム１が、ワイヤーボンディング装置の空間部内を移動する際に、捨てボンディング領域１１上の銅線３０が、クランパー１４と接触し、剥離することが抑止される。   Therefore, as shown in FIG. 4A, in the wire bonding apparatus, first, the capillary 21 is opened to the opening 16 by using the copper wire 20 that is exposed to the outside of the wire bonding apparatus and may be oxidized. Then, ball bonding is continuously performed on the abandoned bonding region 11 of the lead frame 1. At this time, ball bonding is performed with the copper wire 20 held by the wire clamper 29 (see FIG. 3C), so that the initial ball 24 is connected to the discarded bonding region 11 and then the capillary 21 is moved upward. The copper wire 20 is cut when moving to. Then, the height T1 of the copper wire 30 on the discarded bonding region 11 is lower than the height T2 to the top of the loop of the copper wire 33 shown in FIG. With this manufacturing method, when the lead frame 1 moves in the space of the wire bonding apparatus, the copper wire 30 on the discarded bonding region 11 is prevented from coming into contact with the clamper 14 and being peeled off.

更に、吸引用のノズル３１が、開口部１６内またはその近傍に配置され、ワイヤーボンディング作業中の間、開口部１６内を吸引する。この製造方法により、銅線２０の酸化に起因し、捨てボンディング領域１１上に接続しなかった銅線３０やその後、捨てボンディング領域１１上から剥離した銅線３０を吸引する。そして、リードフレーム１が空間部内を移動する際に、剥離した銅線３０が、搭載部２側へと飛散し、半導体素子１２がショートした状態となることが防止される。   Further, a suction nozzle 31 is disposed in or near the opening 16 and sucks the opening 16 during the wire bonding operation. By this manufacturing method, the copper wire 30 that has not been connected to the discarded bonding region 11 due to the oxidation of the copper wire 20 or the copper wire 30 that has been peeled off from the discarded bonding region 11 is sucked. Then, when the lead frame 1 moves in the space portion, the peeled copper wire 30 is prevented from scattering to the mounting portion 2 side and the semiconductor element 12 being short-circuited.

尚、捨てボンディング領域１１にボールボンディングを行った後に、ワイヤークランパー２９にて銅線２０を挟持し、銅線２０の切断長さを調整する場合でも良い。少なくとも前述した銅線３０の高さＴ１が、銅線３３の高さＴ２よりも低くなる関係を満たすことで、捨てボンディング領域１１上の銅線３０が、クランパー１４と接触し、剥離することが抑止される。   In addition, after performing ball bonding to the abandoned bonding region 11, the copper wire 20 may be sandwiched by the wire clamper 29 to adjust the cutting length of the copper wire 20. By satisfying the relationship in which at least the height T1 of the copper wire 30 is lower than the height T2 of the copper wire 33, the copper wire 30 on the discarded bonding region 11 may come into contact with the clamper 14 and peel off. Deterred.

次に、ワイヤーボンディング装置の稼動開始後や再稼動開始後には、ワイヤーボンディング装置の周囲も十分な不活性ガスの雰囲気に満たされ、新たにワイヤーボンディング装置から送り出された銅線２０は酸化し難い状態である。そして、酸化の恐れがある部分の銅線２０による捨てボンディングが終了した後、連続して搭載部２へのワイヤーボンディングが行われる。先ず、図３（Ｃ）に示す如く、形成部２３にて、キャピラリ２１の先端にイニシャルボール２４が形成される。次に、図４（Ｂ）に示す如く、ワイヤークランパー２９は開放された状態にて、キャピラリ２１が半導体素子１２の電極パッド３２上に向けて下降し、イニシャルボール２４を電極パッド３２上面に押し付ける。そして、超音波振動併用の熱圧着技術により、キャピラリ２１の先端に形成されたイニシャルボール２４が電極パッド３２と接続する。尚、捨てボンディング領域１１にボールボンディングを行う一方で、ノズル２２から開口部１５内へと不活性ガスが送風され、また、形成部２３の貫通孔２６へと不活性ガスが送風される。そして、搭載部２へワイヤーボンディングを行う際には、キャピラリ２１の周辺領域は、不活性ガスにより満たされた状態であり、銅線２０が酸化し難い状態である。   Next, after the operation of the wire bonding apparatus is started or restarted, the periphery of the wire bonding apparatus is also filled with a sufficient inert gas atmosphere, and the copper wire 20 newly delivered from the wire bonding apparatus is hardly oxidized. State. And after the abandoned bonding by the copper wire 20 of the part with a possibility of oxidation is complete | finished, the wire bonding to the mounting part 2 is performed continuously. First, as shown in FIG. 3C, an initial ball 24 is formed at the tip of the capillary 21 in the forming portion 23. Next, as shown in FIG. 4B, with the wire clamper 29 opened, the capillary 21 descends onto the electrode pad 32 of the semiconductor element 12 and presses the initial ball 24 against the upper surface of the electrode pad 32. . Then, the initial ball 24 formed at the tip of the capillary 21 is connected to the electrode pad 32 by a thermocompression bonding technique using ultrasonic vibration. In addition, while performing ball bonding to the discarded bonding region 11, the inert gas is blown from the nozzle 22 into the opening portion 15, and the inert gas is blown to the through hole 26 of the forming portion 23. When wire bonding is performed on the mounting portion 2, the peripheral region of the capillary 21 is filled with an inert gas, and the copper wire 20 is not easily oxidized.

次に、図４（Ｃ）に示す如く、ワイヤークランパー２９が開放された状態にて、一定のループを描きながらキャピラリ２１がリード７上面に移動する。そして、ワイヤークランパー２９にて銅線２０を挟持した後、キャピラリ２１がリード７上に下降し、銅線２０をリード７上面に押し付ける。そして、超音波振動併用の熱圧着技術により銅線２０がリード７と接続し、切断されることで、電極パッド３２とリード７とが銅線３３により接続される。その後、キャピラリ２１が上昇し、形成部２３の貫通孔２６内へと戻り、イニシャルボールとなる長さの銅線２０がキャピラリ２１の先端から導出し、前述したようにイニシャルボール２４へと加工される。   Next, as shown in FIG. 4C, the capillary 21 moves to the upper surface of the lead 7 while drawing a fixed loop in a state where the wire clamper 29 is opened. Then, after the copper wire 20 is sandwiched by the wire clamper 29, the capillary 21 is lowered onto the lead 7 and presses the copper wire 20 against the upper surface of the lead 7. Then, the copper wire 20 is connected to the lead 7 by the thermocompression bonding technique combined with ultrasonic vibration, and the electrode pad 32 and the lead 7 are connected by the copper wire 33 by being cut. Thereafter, the capillary 21 rises and returns to the inside of the through hole 26 of the forming portion 23, and the copper wire 20 having a length serving as an initial ball is led out from the tip of the capillary 21 and processed into the initial ball 24 as described above. The

その後、リードフレーム１の全ての搭載部２に対して前述したワイヤーボンディング作業が繰り返される。   Thereafter, the wire bonding operation described above is repeated for all the mounting portions 2 of the lead frame 1.

次に、図５（Ａ）に示す如く、複数の銅線３０がボールボンディングされているリードフレーム１の捨てボンディング領域１１を打ち抜いた後、リードフレーム１上の集合ブロック毎に樹脂モールドし、共通の樹脂パッケージ３４を形成する。例えば、リードフレーム１の裏面側に樹脂モールド用のシート３５を樹脂性接着材等により貼り合せた後、リードフレーム１を樹脂封止金型内に配置する。そして、樹脂封止金型内に絶縁性樹脂を充填することで、集合ブロック毎に共通の樹脂パッケージ３４を形成する。前述したように、共通の樹脂パッケージ３４を形成する前に捨てボンディング領域１１を打ち抜くことで、樹脂封止金型内にリードフレーム１を配置する際に、銅線３０がリードフレーム１上から剥離し、搭載部２側へと飛散することが防止される。   Next, as shown in FIG. 5A, after punching out the abandoned bonding region 11 of the lead frame 1 in which a plurality of copper wires 30 are ball-bonded, resin molding is performed for each aggregate block on the lead frame 1, and the common The resin package 34 is formed. For example, after a resin mold sheet 35 is bonded to the back side of the lead frame 1 with a resinous adhesive or the like, the lead frame 1 is placed in a resin-sealed mold. Then, by filling the resin sealing mold with an insulating resin, a common resin package 34 is formed for each assembly block. As described above, by discarding the bonding region 11 before forming the common resin package 34, the copper wire 30 is peeled off from the lead frame 1 when the lead frame 1 is placed in the resin-sealed mold. In addition, scattering to the mounting portion 2 side is prevented.

次に、図５（Ｂ）に示す如く、リードフレーム１から搭載部２毎に共通の樹脂パッケージ３４を切断して、個々の樹脂パッケージに個片化する。切断にはダイシング装置のダイシングブレード３６を用い、ダイシングライン３７に沿って共通の樹脂パッケージ３４とリードフレーム１とを同時にダイシングする。このとき、シート３５は、その一部のみが切断されることで、個片化された個々の樹脂パッケージはシート３５上に支持される。   Next, as shown in FIG. 5B, the common resin package 34 is cut for each mounting portion 2 from the lead frame 1 and separated into individual resin packages. A dicing blade 36 of a dicing apparatus is used for cutting, and the common resin package 34 and the lead frame 1 are diced simultaneously along a dicing line 37. At this time, only a part of the sheet 35 is cut, so that individual resin packages separated into pieces are supported on the sheet 35.

最後に、図６（Ａ）〜図６（Ｃ）を用いて前述した製造方法により形成される半導体装置について説明する。   Finally, a semiconductor device formed by the manufacturing method described above will be described with reference to FIGS.

図６（Ａ）に示す如く、半導体装置４１は、例えば、ＭＡＰ（Ｍａｔｒｉｘ Ａｒｒａｙ Ｐａｃｋａｇｉｎｇ ｍｅｔｏｄ）方式の樹脂パッケージ４２から成る。前述したように、例えば、４つの搭載部２から成る共通の樹脂パッケージ３４をダイシングにより個片化するため、樹脂パッケージ４２の側面４３からリード７が露出する。そして、リード７の露出面は、樹脂パッケージ４２の側面４３と、実質、同一面を形成する。   As shown in FIG. 6A, the semiconductor device 41 includes, for example, a MAP (Matrix Array Packaging Method) type resin package 42. As described above, the leads 7 are exposed from the side surfaces 43 of the resin package 42 in order to separate the common resin package 34 including the four mounting portions 2 by dicing, for example. The exposed surface of the lead 7 forms substantially the same surface as the side surface 43 of the resin package 42.

図６（Ｂ）に示す如く、樹脂パッケージ４２の裏面４４にはアイランド５が露出し、アイランド５の露出面は、樹脂パッケージ４２の裏面４４と、実質、同一面を形成する。   As shown in FIG. 6B, the island 5 is exposed on the back surface 44 of the resin package 42, and the exposed surface of the island 5 forms substantially the same surface as the back surface 44 of the resin package 42.

図６（Ｃ）は図６（Ｂ）に示す樹脂パッケージ４２のＡ−Ａ線方向の断面図を示すが、アイランド５上には、例えば、Ａｇペースト、半田等の接着材４５により半導体素子１２が固着される。半導体素子１２の電極パッド３２（図４（Ｃ）参照）とリード７とは銅線３３により電気的に接続される。そして、銅線３３は、例えば、径が３３〜５０μｍ、９９．９〜９９．９９ｗｔ％の銅から成る。   6C shows a cross-sectional view of the resin package 42 shown in FIG. 6B in the AA line direction. On the island 5, the semiconductor element 12 is bonded with an adhesive 45 such as Ag paste or solder. Is fixed. The electrode pad 32 (see FIG. 4C) of the semiconductor element 12 and the lead 7 are electrically connected by a copper wire 33. The copper wire 33 is made of, for example, copper having a diameter of 33 to 50 μm and 99.9 to 99.99 wt%.

尚、本実施の形態では、捨てボンディング領域１１が、リードフレーム１のスリット３の上方または下方領域やスリット３間に配置される場合について説明したが、この場合に限定するものではない。例えば、リードフレーム１の進行方向の先端領域に捨てボンディング領域１１が配置され、捨てボンディング領域１１の後方に前述した複数の搭載部２が配置される場合でも良い。この場合でも、酸化の恐れがある部分の銅線２０が、捨てボンディング領域１１にワイヤーボンディングされることで、搭載部２側での接続不良が抑止される。   In the present embodiment, the case where the discarded bonding region 11 is disposed above or below the slit 3 of the lead frame 1 or between the slits 3 is described. However, the present invention is not limited to this case. For example, the discard bonding region 11 may be disposed in the leading end region of the lead frame 1 in the traveling direction, and the plurality of mounting portions 2 described above may be disposed behind the discard bonding region 11. Even in this case, a portion of the copper wire 20 that is likely to be oxidized is wire-bonded to the discarded bonding region 11, thereby preventing connection failure on the mounting portion 2 side.

あるいは、図１（Ａ）に示すリードフレーム１の先端（最初にワイヤーボンディング装置に送り込まれる先端）に位置する搭載部２を捨てボンディング領域として用いる場合でも良い。この場合には、クランパー１４の開口部は、開口部１５のみで対応することが可能となる。また、捨てボンディング領域が広がることで、ボールボンディングとステッチボンディングを組み合わせることで、酸化の恐れがある部分の銅線２０の使用が早まり、捨てボンディング時間が短縮される。   Alternatively, the mounting portion 2 located at the tip of the lead frame 1 shown in FIG. 1A (first tip fed into the wire bonding apparatus) may be discarded and used as a bonding region. In this case, the opening of the clamper 14 can be handled only by the opening 15. Further, since the discarded bonding area is widened, by combining ball bonding and stitch bonding, the use of the copper wire 20 in a portion where there is a possibility of oxidation is accelerated, and the discarded bonding time is shortened.

あるいは、クランパー１４の表面側、または、クランパー１４の周囲に捨てボンディングを行うためのフレーム（例えば、Ｃｕフレーム）の設置領域を設け、そのフレームに対して捨てボンディングを行う場合でも良い。この場合には、実際にリードフレーム１が移動する領域外にて捨てボンディングが行われることで、捨てボンディングされた銅線が、リードフレーム１上へと飛散することが防止される。また、捨てボンディング後に、そのフレームが取り替えられる機構を設けることで、前述したリードフレーム１上への飛散が確実に防止される。また、フレームの設置領域近傍に吸引ノズル等の飛散防止機構を設けることで、前述したリードフレーム１上への飛散が防止される。   Alternatively, a frame (for example, a Cu frame) for discarding bonding may be provided on the front surface side of the clamper 14 or around the clamper 14, and the discarding bonding may be performed on the frame. In this case, the discarded bonding is performed outside the area where the lead frame 1 actually moves, so that the discarded bonded copper wire is prevented from scattering onto the lead frame 1. Further, by providing a mechanism for replacing the frame after the abandoned bonding, the above-described scattering onto the lead frame 1 is surely prevented. Further, by providing a scattering prevention mechanism such as a suction nozzle in the vicinity of the frame installation region, the above-described scattering onto the lead frame 1 is prevented.

また、クランパー１４の開口部１５内に吹き込まれる不活性ガスの温度に関し特に限定していない。例えば、ノズル２２に不活性ガスを供給する装置内に加熱機構を設けることで、不活性ガスを開口部１５内と同等に加熱した後、開口部１５内に吹き込ませる場合でも良い。同様に、形成部２３の貫通孔２６へ供給される不活性ガスも、加熱された状態にて用いられる場合でも良い。この場合には、半導体素子１２の電極パッド３２が、不活性ガスにより冷却され難く、イニシャルボール２４との接続性が向上される。同様に、銅線２０が不活性ガスにより冷却され難く、イニシャルボール形成時の電流効率を向上させることができる。その他、本発明の要旨を逸脱しない範囲で、種々の変更が可能である。   Further, the temperature of the inert gas blown into the opening 15 of the clamper 14 is not particularly limited. For example, a heating mechanism may be provided in the apparatus that supplies the inert gas to the nozzle 22 so that the inert gas is heated in the same manner as in the opening 15 and then blown into the opening 15. Similarly, the inert gas supplied to the through hole 26 of the formation part 23 may be used in a heated state. In this case, the electrode pad 32 of the semiconductor element 12 is not easily cooled by the inert gas, and the connectivity with the initial ball 24 is improved. Similarly, the copper wire 20 is not easily cooled by the inert gas, and the current efficiency at the time of forming the initial ball can be improved. In addition, various modifications can be made without departing from the scope of the present invention.

１ リードフレーム
２ 搭載部
５ アイランド
７ リード
１１ 捨てボンディング領域
１２ 半導体素子
１４ クランパー
１５、１６ 開口部
２０ 銅線
２１ キャピラリ
２２ ノズル
２３ 形成部
２４ イニシャルボール DESCRIPTION OF SYMBOLS 1 Lead frame 2 Mounting part 5 Island 7 Lead 11 Discarding bonding area 12 Semiconductor element 14 Clamper 15, 16 Opening part 20 Copper wire 21 Capillary 22 Nozzle 23 Forming part 24 Initial ball

Claims (5)

アイランドと、前記アイランドの周囲に配置された複数のリードと、前記アイランドから延在された吊りリードとを有する搭載部が複数形成されたリードフレームを準備し、
前記アイランド上に半導体素子を固着し、前記半導体素子の電極パッドと前記リードとを銅線によりワイヤーボンディングした後、前記搭載部を樹脂で被覆し、樹脂パッケージを形成する半導体装置の製造方法において、
前記ワイヤーボンディング領域に不活性ガスを供給しながら、前記搭載部近傍に配置された前記リードフレームの捨てボンディング領域に対してワイヤーボンディングを行った後、連続して前記搭載部の前記電極パッドと前記リードとを前記銅線によりワイヤーボンディングすることを特徴とする半導体装置の製造方法。 Preparing a lead frame formed with a plurality of mounting portions each having an island, a plurality of leads arranged around the island, and a suspension lead extending from the island;
In the semiconductor device manufacturing method of fixing a semiconductor element on the island, wire bonding the electrode pad of the semiconductor element and the lead with a copper wire, covering the mounting portion with a resin, and forming a resin package,
While performing an inert gas supply to the wire bonding region, wire bonding is performed on the discarded bonding region of the lead frame disposed in the vicinity of the mounting portion, and then the electrode pads of the mounting portion and the A method of manufacturing a semiconductor device, wherein a lead is wire-bonded with the copper wire. 前記捨てボンディング領域へのワイヤーボンディング作業は、前記ワイヤーボンディングを行うワイヤーボンディング装置の稼動時または再稼動時の最初に行われることを特徴とする請求項１に記載の半導体装置の製造方法。 2. The method of manufacturing a semiconductor device according to claim 1, wherein the wire bonding operation to the discarded bonding region is performed at the beginning of operation or re-operation of the wire bonding apparatus that performs the wire bonding. 前記捨てボンディング領域へのワイヤーボンディング作業は、前記ワイヤーボンディング装置の稼動時または再稼動時前に前記ワイヤーボンディング装置外へと配置されていた前記銅線が使用されるまで行われることを特徴とする請求項２に記載の半導体装置の製造方法。 The wire bonding operation to the abandoned bonding region is performed until the copper wire arranged outside the wire bonding apparatus is used before the wire bonding apparatus is operated or restarted. A method for manufacturing a semiconductor device according to claim 2. 前記リードフレームは、前記ワイヤーボンディング装置のクランパーにより押圧固定され、前記リードフレームの捨てボンディング領域上の前記クランパーには開口部が形成され、前記開口部近傍に配置されたノズルにより前記開口部内は吸引されることを特徴とする請求項２または請求項３に記載の半導体装置の製造方法。 The lead frame is pressed and fixed by a clamper of the wire bonding apparatus, an opening is formed in the clamper on the discard bonding area of the lead frame, and the inside of the opening is sucked by a nozzle disposed in the vicinity of the opening. The method of manufacturing a semiconductor device according to claim 2, wherein the method is performed. 前記リードフレームの捨てボンディング領域は、前記樹脂パッケージを形成する工程前に打ち抜かれることを特徴とする請求項２または請求項３に記載の半導体装置の製造方法。 4. The method of manufacturing a semiconductor device according to claim 2, wherein the discarded bonding region of the lead frame is punched before the step of forming the resin package.
JP2010070097A 2010-03-25 2010-03-25 Method of manufacturing semiconductor device Pending JP2011204861A (en)

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