JP2011135561A - Sensor device, method of driving sensor element, display device with input function, electronic unit and radiation image pickup device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To perform a stable detecting operation by surely resetting stored electric charge stored in a charge storage section so as to reduce afterimages even if a photoelectric conversion element is brought into a saturated state, for example. <P>SOLUTION: A photoelectric conversion element PD1 generates electric charge according to the quantity of received light. Electric charge generated by the photoelectric conversion element PD1 is stored in a charge storage section (storage capacitor C0). The stored electric charge stored in the storage capacitor C0 is reset by supplying a predetermined reset voltage Vrst to the storage capacitor C0. At such a time, the predetermined reset voltage Vrst is supplied to the storage capacitor continuously or intermittently over a period exceeding one horizontal scan period. Thus, even if the photoelectric conversion element PD1 is brought into a saturated state, for example, the stored electric charge stored in the storage capacitor C0 can be surely reset so as to reduce afterimages. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention provides a sensor device for imaging an object and detecting the position of a nearby object, a driving method of a sensor element applied to such a sensor device, an input function having a sensor function (input function) and a display function The present invention relates to a display device and an electronic device including such a display device. The present invention also relates to a radiation imaging apparatus that converts the wavelength of radiation represented by α rays, β rays, γ rays, and X rays and reads information based on the radiation.

  Conventionally, an optical sensor device having a sensor panel in which photoelectric conversion elements are arranged in a matrix is known (see Patent Documents 1 and 2). In addition, a display device has been developed in which photoelectric conversion elements are arranged in a matrix together with display pixels in a display panel so that the display panel itself has an optical sensor function (see Patent Documents 3 and 4).

JP-A-9-92807 JP 2001-345440 A JP 2006-276223 A JP 2008-233257 A

  In the sensor device or display device as described above, the charge from the photoelectric conversion element generated according to the amount of received light is stored in the storage capacitor, and the voltage value corresponding to the stored charge in the storage capacitor is read and output as a sensor detection signal. To do. The amount of light incident on the photoelectric conversion element changes according to the position, distance, size, etc. of the object close to the panel surface, and the sensor detection signal also changes, so each of the light receiving elements from the plurality of light receiving elements arranged in a matrix is changed. By appropriately processing the sensor detection signal, the position of an object close to the panel can be detected. In such an apparatus, after a predetermined light receiving (exposure) period by the photoelectric conversion element, a reading operation is performed, and thereafter, a predetermined reset voltage is applied to the storage capacitor to reset the stored charge stored in the storage capacitor. Thereafter, the sensor operation of receiving light and reading again is repeated.

  In such a sensor operation, the state of the storage capacitor before the reset may remain despite the reset operation. If the state of the storage capacitor before the reset remains, a so-called afterimage occurs during the next read operation, and a good detection result cannot be obtained. Conventionally, for example, Patent Document 2 described above discloses an invention for reducing an afterimage using a reset transistor. However, in the past, countermeasures are insufficient for the afterimage problem that occurs when a PIN photodiode having a gate electrode is used as a photoelectric conversion element. In the case of a PIN type photodiode, the i layer is in an accumulation state (saturated state), a depletion state, or an inversion state. In particular, there is a problem that even if a reset voltage is applied for a short period after the i-layer is in an accumulated state, the accumulated charge accumulated in the accumulation capacitor cannot be sufficiently reset, and a countermeasure is required.

  The present invention has been made in view of such problems, and an object of the present invention is, for example, to be accumulated in the charge accumulation unit so as to reduce the afterimage even when the photoelectric conversion element is in an accumulation state (saturated state). It is to provide a sensor device, a sensor element driving method, a display device with an input function and an electronic device, and a radiation imaging device that can reliably reset accumulated charges and perform a stable detection operation. .

  The sensor device according to the present invention includes a plurality of sensor elements arranged two-dimensionally and a sensor driving unit that drives the sensor elements, and the sensor element generates a charge corresponding to the amount of light received; A charge storage unit connected to one end of the photoelectric conversion element for storing the charge converted by the photoelectric conversion element, and a readout for reading out a voltage value or stored charge corresponding to the stored charge in the charge storage unit and outputting it as a sensor detection signal And a reset means for resetting the accumulated charge accumulated in the charge accumulation section by applying a predetermined reset voltage to the charge accumulation section. The sensor driving means drives and controls the reset transistor so that a predetermined reset voltage is continuously or intermittently applied to the charge storage unit over a period exceeding one horizontal scanning period.

  The sensor element driving method according to the present invention includes a photoelectric conversion element that generates a charge according to the amount of received light, a charge storage unit that is connected to one end of the photoelectric conversion element and stores the charge converted by the photoelectric conversion element, Reading means for reading out the voltage value or accumulated charge corresponding to the accumulated charge in the charge accumulation unit and outputting it as a sensor detection signal, and resetting the accumulated charge accumulated in the charge accumulation unit by applying a predetermined reset voltage to the charge accumulation unit A predetermined reset voltage is continuously or intermittently applied to the charge storage unit over a period exceeding one horizontal scanning period. The reset means is controlled as described above.

A display device with an input function according to the present invention is a display panel in which a plurality of display pixels and a plurality of sensor elements are two-dimensionally arranged, display driving means for driving the plurality of display pixels, and driving the plurality of sensor elements. Sensor driving means. Then, the same control as the sensor driving means of the sensor device according to the present invention is performed for each of the plurality of sensor elements.
An electronic apparatus according to the present invention includes the display device with an input function according to the present invention.

  A radiation imaging apparatus according to the present invention includes a pixel unit in which a plurality of sensor elements are two-dimensionally arranged and generates charges according to incident radiation or light after wavelength conversion of radiation. Then, the same control as the sensor driving means of the sensor device according to the present invention is performed for each of the plurality of sensor elements.

  In the sensor device, the sensor element driving method, the display device with an input function, the electronic apparatus, or the radiation imaging apparatus according to the present invention, a charge corresponding to the amount of received light is generated in the photoelectric conversion element in the sensor element. Then, the charge converted by the photoelectric conversion element is accumulated in the charge accumulation unit, and the accumulated charge in the charge accumulation unit or a voltage value corresponding to the accumulated charge is output as a sensor detection signal. The accumulated charge accumulated in the charge accumulation unit is reset by applying a predetermined reset voltage to the charge accumulation unit. At this time, by applying a predetermined reset voltage to the storage capacitor continuously or intermittently over a period exceeding one horizontal scanning period, for example, even when the photoelectric conversion element is saturated, the afterimage is reduced. Thus, the accumulated charge accumulated in the charge accumulation unit can be surely reset.

  According to the sensor device, the sensor element driving method, the display device with an input function, the electronic apparatus, or the radiation imaging apparatus of the present invention, the predetermined reset voltage is accumulated continuously or intermittently over a period exceeding one horizontal scanning period. For example, even when the photoelectric conversion element is saturated, the accumulated charge accumulated in the charge accumulation unit is surely reset so that the afterimage is reduced, so that stable detection is possible. Operation (imaging operation) can be performed.

It is a block diagram showing the example of a structure of the display apparatus with an input function which concerns on the 1st Embodiment of this invention. FIG. 2 is a block diagram illustrating a configuration example of an I / O display panel illustrated in FIG. 1. FIG. 3 is a plan view illustrating a pixel arrangement example in a display area (sensor area) illustrated in FIG. 2. FIG. 4 is a schematic plan view illustrating an example of a connection relationship between a sensor element (imaging pixel) and a signal line in the pixel arrangement illustrated in FIG. 3. FIG. 2 is a circuit diagram illustrating a configuration example of a sensor element in the display device illustrated in FIG. 1. It is sectional drawing showing the structure of the principal part in the sensor element shown in FIG. (A) is explanatory drawing which shows the case where a photoelectric conversion element exists in an accumulation | storage state (saturation state), (B) is explanatory drawing which shows the case where a photoelectric conversion element exists in a depletion state. FIG. 6 is a circuit diagram for explaining capacitive coupling in the sensor element shown in FIG. 5. FIG. 6 is a characteristic diagram showing an afterimage characteristic in the sensor element shown in FIG. 5. FIG. 2 is a timing waveform diagram illustrating an example of a sensor operation (imaging operation) in the display device illustrated in FIG. 1. (A) is a waveform diagram showing a comparative example of the reset control signal, (B) is a waveform diagram showing a first example of the reset control signal, and (C) shows a second example of the reset control signal. It is a waveform diagram. 1A shows a state where there is a close object in the sensor area when there is strong external light in the display device shown in FIG. 1, and FIG. 3B is an explanatory diagram showing an example of the sensor output voltage in that state. 1A shows a state where there is a proximity object in the sensor area when the external light is weak in the display device shown in FIG. 1, and FIG. 3B is an explanatory diagram showing an example of the sensor output voltage in that state. It is a photograph figure for demonstrating the detection method of the proximity | contact object using a difference image. (A) shows the 1st execution example of the application program using the result of the proximity object detection process in the display apparatus shown in FIG. 1, (B) is explanatory drawing which shows a 2nd execution example. It is explanatory drawing which shows the 3rd execution example of the application program using the result of the detection process of a proximity | contact object. It is explanatory drawing which shows the 4th execution example of the application program using the result of the detection process of a proximity | contact object. It is explanatory drawing which shows the 5th execution example of the application program using the result of the detection process of a proximity | contact object. It is a perspective view showing the external appearance of the 1st application example of the display apparatus shown in FIG. (A) is a perspective view showing the external appearance seen from the front side of the 2nd application example, (B) is a perspective view showing the external appearance seen from the back side. It is a perspective view showing the external appearance of the 3rd application example. It is a perspective view showing the external appearance of the 4th application example. (A) is a front view of the fifth application example in an open state, (B) is a side view thereof, (C) is a front view in a closed state, (D) is a left side view, and (E) is a right side view. (F) is a top view and (G) is a bottom view. It is a block diagram showing the example of 1 structure of the photoelectric conversion apparatus which concerns on the 2nd Embodiment of this invention. It is a block diagram showing the radiation imaging device which consists of a combination of a photoelectric conversion apparatus and a wavelength converter. FIG. 25 is a circuit diagram illustrating a first configuration example of an active pixel circuit applied to the photoelectric conversion device illustrated in FIG. 24. FIG. 25 is a circuit diagram illustrating a second configuration example of an active pixel circuit applied to the photoelectric conversion device illustrated in FIG. 24. FIG. 25 is a circuit diagram illustrating a first configuration example of a passive pixel circuit applied to the photoelectric conversion device illustrated in FIG. 24. FIG. 25 is a circuit diagram illustrating a second configuration example of a passive pixel circuit applied to the photoelectric conversion device illustrated in FIG. 24. It is sectional drawing which shows the principal part of the photoelectric conversion apparatus shown in FIG. FIG. 28 is an explanatory diagram illustrating a first example of operation timing applied to the active pixel circuit illustrated in FIGS. 26 and 27; FIG. 30 is an explanatory diagram illustrating a first example of operation timing applied to the passive pixel circuit illustrated in FIGS. 28 and 29. FIG. 32 is a timing chart corresponding to the operation timing shown in FIG. 31. FIG. It is a timing chart corresponding to the operation timing shown in FIG. FIG. 28 is an explanatory diagram illustrating a second example of operation timing applied to the active pixel circuit illustrated in FIGS. 26 and 27; 36 is a timing chart corresponding to the operation timing shown in FIG. FIG. 28 is an explanatory diagram illustrating a third example of operation timing applied to the active pixel circuit illustrated in FIGS. 26 and 27; FIG. 30 is an explanatory diagram illustrating a second example of operation timing applied to the passive pixel circuit illustrated in FIGS. 28 and 29. It is explanatory drawing which shows the 1st example of the operation timing of the comparative example applied to an active pixel circuit. It is explanatory drawing which shows the 2nd example of the operation timing of the comparative example applied to an active pixel circuit. It is explanatory drawing which shows the 1st example of the operation timing of the comparative example applied to a passive type pixel circuit. FIG. 11 is an explanatory diagram illustrating operation timing for verifying characteristics of an active pixel circuit. It is explanatory drawing which shows the operation timing for the characteristic verification of a passive type pixel circuit. (A) is a timing chart showing the timing of light irradiation for characteristic verification, and (B) is a timing chart showing the application timing of the reset control signal for characteristic verification. It is a characteristic view showing the result of directly measuring the output voltage of the active pixel circuit. FIG. 28 is a characteristic diagram illustrating a result obtained by measuring an output voltage of a pixel circuit alone after passing through an amplifier in the second configuration example of the active pixel circuit illustrated in FIG. 27. FIG. 27 is a characteristic diagram illustrating a result obtained by measuring an output voltage of a pixel circuit alone after passing through an amplifier in the first configuration example of the active pixel circuit illustrated in FIG. 26; (A) is a characteristic diagram showing a result of directly verifying an output voltage of a single pixel circuit without passing through an amplifier in a second configuration example of an active pixel circuit, and (B) is an active pixel. FIG. 6 is a characteristic diagram showing a result of directly verifying an output voltage of a pixel circuit alone in a first configuration example of a circuit without passing through an amplifier. FIG. 11 is an explanatory diagram illustrating operation timing for verifying characteristics of an active pixel circuit. FIG. 6 is a characteristic diagram showing a result of measuring an output voltage when changing a timing of applying a reset voltage in an active pixel circuit. (A) is a characteristic diagram showing the result of measuring the output voltage when the reset voltage is intermittently applied within one frame period in the active pixel circuit, and (B) is one frame in the active pixel circuit. It is a characteristic view which shows the result of having measured the output voltage at the time of applying a reset voltage continuously within a period.

  Hereinafter, the best mode for carrying out the present invention (hereinafter simply referred to as an embodiment) will be described in detail with reference to the drawings.

<First Embodiment>
[Overall configuration of display device with input function]
FIG. 1 shows an example of the entire configuration of a display device with an input function (display imaging device) according to a first embodiment of the present invention. The display device includes an I / O display panel 20, a backlight 15, a display drive circuit 12, a light receiving drive circuit 13, an image processing unit 14, and an application program execution unit 11.

  The I / O display panel 20 is composed of, for example, a liquid crystal panel (LCD (Liquid Crystal Display)). As shown in FIG. 3 to be described later, the I / O display panel 20 includes a plurality of display pixels 31RGB arranged in a matrix and displays an image such as a predetermined figure or character based on display data while performing a line sequential operation. It has a function as a display panel (display function). The I / O display panel 20 also has a plurality of sensor elements 33 arranged in a matrix as imaging pixels as shown in FIG. 3 to be described later, and detects and images an object in contact with or close to the panel surface (proximity object). Functions as a sensor panel (detection function, imaging function).

  The backlight 15 is a light source for display and detection of the I / O display panel 20, and includes a plurality of light emitting diodes, for example. The backlight 15 is driven and controlled by the display drive circuit 12, and can be turned on / off (lit / extinguished) at high speed at a predetermined timing synchronized with the operation timing of the I / O display panel 20 as will be described later. ing. The backlight 15 periodically irradiates illumination light Lon from the back side of the I / O display panel 20 toward the panel surface.

  The display drive circuit 12 drives the display pixels 31RGB of the I / O display panel 20 so that an image based on the display data is displayed on the I / O display panel 20 (to perform a display operation) (line A circuit that sequentially drives a display operation). The display drive circuit 12 also performs on / off (lighting / extinguishing) control of the backlight 15.

  The light receiving drive circuit 13 is connected to the I / O display so that a sensor detection signal (imaging signal) can be obtained from each sensor element (imaging pixel) 33 of the I / O display panel 20 (so as to detect and image an object). A circuit that drives the panel 20 (drives a line-sequential imaging operation). The sensor detection signals (imaging signals) from the sensor elements 33 are accumulated in the frame memory 13A, for example, in units of frames, and are output to the image processing unit 14 as detection images (captured images).

  The image processing unit 14 performs predetermined image processing (arithmetic processing) based on the captured image output from the light receiving drive circuit 13. The image processing unit 14 detects and acquires object information (position coordinate data, data on the shape and size of the object, etc.) related to an object that is close to the I / O display panel 20, for example, as a result of the image processing. It is like that.

  The application program execution unit 11 executes processing corresponding to predetermined application software based on the detection result by the image processing unit 14. As this process, for example, the position coordinates of the detected object are included in the display data and displayed on the I / O display panel 20. The display data generated by the application program execution unit 11 is supplied to the display drive circuit 12.

[Configuration Example of I / O Display Panel 20]
FIG. 2 shows a configuration example of the I / O display panel 20. The I / O display panel 20 includes a display area (sensor area) 21, a display H driver 22, a display V driver 23, a sensor readout H driver 25, and a sensor V driver 24. .

  1 and 2, the light receiving drive circuit 13, the sensor V driver 24, and the sensor readout H driver 25 correspond to a specific example of "sensor driving means" in the present invention. The display drive circuit 12, the display H driver 22, and the display V driver 23 correspond to a specific example of “display drive unit”. The I / O display panel 20 corresponds to a specific example of “display panel” and “sensor panel”. The light receiving drive circuit 13 and the image processing unit 14 correspond to a specific example of “signal processing means”.

  The display area (sensor area) 21 modulates light from the backlight 15 and includes irradiation light (display light and irradiation light for detection by an infrared light source or the like (not shown), for example). ) And an object in contact with or close to this area is detected (imaged). In the display area (sensor area) 21, display pixels 31RGB (for example, liquid crystal elements) and sensor elements 33 (to be described later) are arranged in a matrix.

  The display H driver 22 line-sequentially drives the display pixels 31RGB in the display area 21 together with the display V driver 23 based on the display drive display signal and the control clock supplied from the display drive circuit 12. .

  The sensor readout H driver 25 drives the sensor elements 33 as imaging pixels in the sensor area 21 together with the sensor V driver 24 in accordance with the drive control by the light receiving drive circuit 13 to acquire a detection signal (imaging signal). Is. The light receiving drive circuit 13 charges the sensor element 33 according to the total light amount of the reflected light from the irradiated light and the ambient light (external light) when the adjacent object is irradiated with the irradiated light from the backlight 15. Drive control is performed so that electric charges are accumulated. Further, when the irradiation light from the backlight 15 is not irradiated, drive control is performed such that the charge charge is accumulated in the sensor element 33 in accordance with the amount of ambient light. The sensor reading H driver 25 outputs each sensor detection signal (imaging signal) when the backlight 15 is on and off, acquired from the sensor element 33 by these drive controls, to the light receiving drive circuit 13. It has become.

  FIG. 3 shows a detailed configuration example of each pixel in the display area (sensor area) 21. For example, as illustrated in FIG. 3, the pixel 31 in the display area 21 includes a display pixel 31 RGB, a sensor element 33 as an imaging pixel, and a wiring portion 32 in which wiring for the sensor element 33 is formed. . The display pixel 31RGB is composed of a display pixel 31R for red (R), a display pixel 31G for green (G), and a display pixel 31B for blue (B). The display pixels 31RGB, the sensor element 33, and the wiring part 32 are arranged in a matrix on the display area (sensor area) 21, respectively. Further, the sensor element 33 and the wiring part 32 for driving the sensor element 33 are arranged separately from each other at a constant period. Such an arrangement makes it very difficult to recognize the sensor rear composed of the sensor element 33 and the wiring portion 32 with respect to the display pixel 31RGB, and reduces the aperture ratio reduction in the display pixel 31RGB to a minimum. Further, if the wiring portion 32 is arranged in a region that does not contribute to the opening of the display pixel 31RGB (for example, a region shielded by the black matrix or a reflective region), the light receiving circuit is arranged without degrading the display quality. It becomes possible. For example, as illustrated in FIG. 4, reset control signal lines Reset_1 to Reset_n and read control signal lines Read_1 to Read_n are connected to each sensor element 33 along the horizontal line direction.

[Configuration Example of Sensor Element 33]
For example, as shown in FIG. 5, the sensor element 33 includes a photoelectric conversion element PD1, a reset transistor Tr1, a storage node P1, an amplification transistor Tr2, a selection / reading transistor Tr3, and a storage capacitor C0 (charge). Storage section).

  The photoelectric conversion element PD1 generates an electric charge according to the amount of incident light, and is composed of, for example, a PIN type photodiode. As shown in FIG. 6 to be described later, the PIN photodiode is an intrinsic semiconductor formed between a p-type semiconductor region 54A, an n-type semiconductor region 54B, and a p-type semiconductor region 54A and an n-type semiconductor region 54B. A region (i region) 54C. The photoelectric conversion element PD1 also has an anode electrode 55, a cathode electrode 56, and a gate electrode 52 as shown in FIG. 6 to be described later. The anode electrode 55 is connected to the p-type semiconductor region 54A, and the n-type semiconductor region 54B is connected to the n-type semiconductor region 54B. A cathode electrode 56 is connected. The cathode electrode 56 of the photoelectric conversion element PD1 is connected to a power supply line that supplies a power supply voltage VDD. One end (anode electrode 55) of the photoelectric conversion element PD1 is connected to one end (drain terminal) of the reset transistor Tr1.

  One end of the storage capacitor C0 is connected to one end (anode electrode 55) of the photoelectric conversion element PD1, one end (drain terminal) of the reset transistor Tr1, and the gate terminal of the amplification transistor Tr2 via the storage node P1. . Charges converted by the photoelectric conversion element PD1 are stored in the storage capacitor C0. The voltage value of the storage node P1 fluctuates depending on the charge stored in the storage capacitor C0. The other end of the storage capacitor C0 is connected to a supply line VSS of a predetermined reset voltage Vrst (for example, 0 V) together with the source terminal of the reset transistor Tr1.

  Each of the resetting transistor Tr1, the amplifying transistor Tr2, and the selection / reading transistor Tr3 is configured by, for example, a thin film transistor (TFT).

  The gate terminal of the reset transistor Tr1 is connected to a reset control signal line Reset (see FIGS. 4 and 5) for supplying a reset control signal V (Reset), and the source terminal is a supply line for a predetermined reset voltage Vrst (for example, 0 V). Connected to VSS. The drain terminal of the reset transistor Tr1 and the gate terminal of the amplification transistor Tr2 are connected to one end (storage node P1) of the storage capacitor C0. The drain terminal of the amplifying transistor Tr2 is connected to a power supply line that supplies the power supply voltage VDD. The source terminal of the amplifying transistor Tr2 is connected to the drain terminal of the selection / reading transistor Tr3. The selection / reading transistor Tr3 has a gate terminal connected to a read control signal line Read that supplies a read control signal V (Read), and a source terminal connected to a read line 41.

  The reset transistor Tr1 is for resetting the voltage value of the storage node P1 to a predetermined reset voltage Vrst (releasing the stored charge of the storage capacitor C0) by applying a predetermined reset voltage Vrst to the storage capacitor C0. is there. In this embodiment, as shown in FIGS. 11B and 11C described later, the light receiving drive circuit 13 controls the pulse period of the reset control signal V (Reset) applied to the gate terminal of the reset transistor Tr1. Thus, the predetermined reset voltage Vrst is applied to the storage capacitor C0 continuously or intermittently over a period exceeding a 1H (horizontal scanning) period (for example, 32 μsec).

The amplifying transistor Tr2 and the selection / reading transistor Tr3 form a signal reading circuit, which reads a voltage value corresponding to the accumulated charge in the accumulation capacitor C0 and outputs it as a sensor detection signal. The sensor detection signal is output to the readout line 41 at the timing when the selection / readout transistor Tr3 is turned on according to the read control signal V (Read) applied to the gate terminal.
The amplification transistor Tr2 and the selection / readout transistor Tr3 correspond to a specific example of “reading means” in the present invention.

[Element structure of sensor element 33 and transistor]
FIG. 6 shows an example of the element structure of the photoelectric conversion element PD1. FIG. 6 shows a configuration example of a bottom gate type. The sensor element 33 includes a substrate 51, a gate electrode 52, a gate insulating film 53, a PIN semiconductor layer 54, an anode electrode 55, a cathode electrode 56, an insulating film (planarizing film) 57 formed on the substrate 51, And an interlayer insulating film 58. The PIN type semiconductor layer 54 includes a p type semiconductor region 54A, an n type semiconductor region 54B, and an intrinsic semiconductor region (i region) 54C formed between the p type semiconductor region 54A and the n type semiconductor region 54B. is doing.

  FIG. 6 also shows an example of the element structure of the transistor Tr. The semiconductor layer 60 of the transistor Tr is formed on the same layer as the PIN semiconductor layer 54 of the photoelectric conversion element PD1 on the substrate 51. The transistor Tr shown in FIG. 6 is, for example, an amplification transistor Tr2 or a selection / readout transistor Tr3. In addition, this display device includes sensor driving means (light receiving drive circuit 13, sensor V driver 24 and sensor readout H driver 25), and display pixels 31RGB and display driving means (display drive circuit 12, display H driver 22 and Each of the display V drivers 23) has a switching transistor including a semiconductor layer. Similarly, for the switching transistors in these circuit portions, it is preferable that the semiconductor layer be formed in the same layer as the PIN type semiconductor layer 54 of the photoelectric conversion element PD1 on the substrate 51.

  First, the element structure on the photoelectric conversion element PD1 side will be described. The substrate 51 is an insulating substrate such as a plastic film substrate or a glass substrate. The gate electrode 52 is made of, for example, Al (aluminum) or Mo (molybdenum). The gate electrode 52 is formed at least in a region facing the intrinsic semiconductor region 54C, and has, for example, a rectangular shape. In FIG. 6, there is a case where the gate electrode 52 is formed not only in the intrinsic semiconductor region 54C but also in a region facing a part including the p-type semiconductor region 54A and a part including the n-type semiconductor region 54B. Illustrated. Thus, the gate electrode 52 functions as a light shielding film that blocks light incident from the substrate 51 side from entering the intrinsic semiconductor region 54C.

The gate insulating film 53 includes, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiN) as a main component. The gate insulating film 53 is disposed opposite to the PIN type semiconductor layer 54 in the stacking direction (Z direction in the drawing). The gate insulating film 53 is formed, for example, in a region facing at least a portion including the intrinsic semiconductor region 54C, and is formed so as to cover the gate electrode 52, for example. FIG. 6 illustrates the case where the gate insulating film 53 is formed over the entire surface of the substrate 51 including the gate electrode 52.

The PIN type semiconductor layer 54 is formed so as to cross a region facing the gate electrode 52, and is formed to extend in a direction facing the anode electrode 55 and the cathode electrode 56 (X direction in the drawing). The upper surface of the PIN type semiconductor layer 54 is covered with a planarizing film 57 and an interlayer insulating film 58 except for a contact portion with the anode electrode 55 and the cathode electrode 56. Light from the outside enters the PIN type semiconductor layer 54 from the upper surface side of the planarizing film 57 and the interlayer insulating film 58. The planarizing film 57 and the interlayer insulating film 58 are made of a material that is transparent to incident light, and include, for example, silicon oxide (SiO ₂ ), silicon nitride (SiN), or the like as a main component.

The p-type semiconductor region 54A and the n-type semiconductor region 54B oppose each other in the first direction (X direction in the drawing) in the stacked surface (in the xy plane in the drawing). The p-type semiconductor region 54A and the n-type semiconductor region 54B are not in direct contact with each other, and are disposed via the intrinsic semiconductor region 54C. Therefore, a PIN structure is formed in the in-plane direction in the PIN type semiconductor layer 54. The PIN semiconductor layer 54 is a non-single crystal semiconductor layer such as polycrystalline silicon. The p-type semiconductor region 54A is made of, for example, a silicon thin film containing p-type impurities (p ⁺ ), and the n-type semiconductor region 54B is made of, for example, a silicon thin film containing n-type impurities (n ⁺ ). The intrinsic semiconductor region 54C is made of, for example, a silicon thin film not doped with impurities.

  The anode electrode 55 and the cathode electrode 56 are made of, for example, Al. The anode electrode 55 is electrically connected to the p-type semiconductor region 54A, and the cathode electrode 56 is electrically connected to the n-type semiconductor region 54B.

  Next, an element structure on the transistor Tr side will be described. Note that the description of the same structural portion as that on the photoelectric conversion element PD1 side is omitted. The transistor Tr includes a gate electrode 59, a semiconductor layer 60, a drain electrode 55D, and a source electrode 56S. The semiconductor layer 60 has a source region 60B, a drain region 60A, and a channel region 60C.

The gate electrode 59 is made of, for example, Al (aluminum) or Mo (molybdenum). The gate electrode 59 is formed at least in a region facing the channel region 60C. The upper surface of the semiconductor layer 60 is covered with the planarization film 57 and the interlayer insulating film 58 except for the contact portion with the drain electrode 55D and the source electrode 56S.
The source region 60B and the drain region 60A oppose each other in the first direction (X direction in the drawing) in the stacking plane (in the XY plane in the drawing). The source region 60B and the drain region 60A are not in direct contact with each other and are disposed via the channel region 60C. The semiconductor layer 60 is a non-single crystal semiconductor layer such as polycrystalline silicon.

  The drain electrode 55D and the source electrode 56S are made of, for example, Al. The drain electrode 55D is electrically connected to the drain region 60A, and the source electrode 56S is electrically connected to the source region 60B.

In the element structure shown in FIG. 6, the thickness of each layer is formed with the following values, for example.
Gate electrodes 52 and 59: 50 to 100 nm
Gate insulating film 53: 50 to 200 nm
PIN type semiconductor layer 54: 40 to 200 nm
Semiconductor layer 60: 40-200 nm
Anode electrode 55: 500 to 1000 nm
Cathode electrode 56: 500 to 1000 nm
Interlayer insulating film 58: 500 to 1000 nm
Drain electrode 55D: 500 to 1000 nm
Source electrode 56S: 500 to 1000 nm

[Overall operation of display device]
First, the overall operation of this display device will be described.

  In this display device, a display drive signal is generated in the display drive circuit 12 based on display data supplied from the application program execution unit 11. With this drive signal, line-sequential display drive is performed on the I / O display panel 20, and an image is displayed. At this time, the backlight 15 is also driven by the display drive circuit 12, and a periodic lighting / extinguishing operation synchronized with the I / O display panel 20 is performed.

  When there is an object in contact with or in proximity to the I / O display panel 20 (proximity object such as a fingertip), each sensor element (imaging pixel) 33 in the I / O display panel 20 is driven by line sequential imaging drive by the light receiving drive circuit 13. The object is detected (imaged). Detection signals (imaging signals) from the sensor elements 33 are supplied from the I / O display panel 20 to the light receiving drive circuit 13. In the light receiving drive circuit 13, the detection signal of the sensor element 33 is accumulated for one frame, and is output to the image processing unit 14 as a captured image. Here, what is output to the image processing unit 14 is an image based on a sensor detection signal from the sensor element 33 obtained by turning on the backlight 15 and a sensor obtained by turning off the backlight 15. It is a two-frame image with an image based on a sensor detection signal from the element 33.

  The image processing unit 14 performs predetermined image processing (arithmetic processing) on the basis of the captured image, so that object information (position coordinate data, object shape, and the like regarding the object in contact with or close to the I / O display panel 20). Get size data). For example, calculation processing for determining the center of gravity of the difference image generated in the light receiving drive circuit 13 is performed, and the contact (proximity) center is specified. Then, the detection result of the proximity object is output from the image processing unit 14 to the application program execution unit 11. The application program execution unit 11 executes an application program as will be described later.

[Specific examples of proximity object detection]
Next, a specific example of the sensor operation (imaging operation) in this display device will be described.
In this display device, in the I / O display panel 20, a process of sequentially resetting the voltage value of the storage node P1 of the sensor element 33 (stored charge of the storage capacitor C0) with the reset voltage Vrst from the upper line to the lower line. Perform (Reset period). Next, exposure (accumulation of the charge converted by the photoelectric conversion element PD1 in the storage capacitor C0) is performed with the backlight 15 turned on (exposure period (bright)). Next, a process of reading a voltage value (voltage value of the storage node P1) corresponding to the stored charge of the storage capacitor C0 in the sensor element 33 as a sensor detection signal is performed sequentially from the upper line to the lower line (Read period).

  Next, the process of resetting the voltage value of the storage node P1 in the sensor element 33 (stored charge of the storage capacitor C0) with the reset voltage Vrst is performed again sequentially from the upper line to the lower line (Reset period). Next, exposure (accumulation of the charge converted by the photoelectric conversion element PD1 in the storage capacitor C0) is performed with the backlight 15 turned off (exposure period (dark)). Next, a process of reading a voltage value (voltage value of the storage node P1) corresponding to the stored charge of the storage capacitor C0 in the sensor element 33 as a sensor detection signal is performed sequentially from the upper line to the lower line (Read period).

  As described above, exposure is performed in a state where the backlight 15 is turned on (bright state) and exposure in a state where the backlight 15 is turned off (dark state) with the Reset period interposed therebetween, and sensor detection signals in each state The process which reads is performed.

  FIG. 12A shows a state in which there is a proximity object (finger f) in the sensor area 21 of the I / O display panel 20 when there is strong external light L0 in this display device, and FIG. The example of the sensor output voltage (light reception output voltage) in a state is shown. For example, as shown in FIG. 12A, when the incident external light (environment light) L0 is strong, the received light output voltage Von101 when the backlight 15 is turned on is shown in FIG. It becomes like. That is, in the sensor area 21 on the panel, the voltage value Va corresponds to only the brightness of the outside light L0 except for the part where the finger f is close. Further, at the location where the finger f is close, the voltage value Vb is reduced to correspond to the brightness of the illumination light Lon from the backlight 15 reflected by the surface of the finger f. On the other hand, the light reception output voltage Voff101 with the backlight 15 turned off is the same in that the voltage value Va corresponds to the brightness of the external light L0 except where the finger f is close. In the place where the finger f is close, the external light L0 is almost blocked, and the voltage value Vc is very low.

  FIG. 13A shows a state in which the proximity object (finger f) is present in the sensor area 21 of the I / O display panel 20 when the external light L0 is weak in this display device, and FIG. 2 shows an example of the sensor output voltage (light reception output voltage). For example, as shown in FIG. 13A, in the state where the incident external light L0 is weak (nearly), the received light output voltage Von201 when the backlight 105 is turned on is shown in FIG. It becomes like this. That is, the voltage value Vc becomes a very low level because the outside light L0 is small except in the sensor area 21 where the finger f is close. Further, at a location where the finger f is close in the sensor area 21, the voltage value Vb rises corresponding to the brightness of the illumination light Lon from the backlight 15 reflected by the surface of the finger f. On the other hand, the light reception output voltage Voff2 in a state where the backlight 15 is turned off remains at a very low voltage value Vc at both the location where the finger f is close and the other location, and does not change. .

  In this way, at a portion of the sensor area 21 where the finger f is not in proximity, the light reception output voltage is greatly different depending on whether or not the external light L0 is present. On the other hand, in the part of the display area 21 where the finger f is close, the voltage value Vb when the backlight 15 is turned on and the voltage value Vc when the backlight 15 is turned off regardless of the presence or absence of the external light L0. However, it is almost the same state. Therefore, by detecting the difference between the voltage when the backlight 10 is turned on and the voltage when the backlight 10 is turned off, the object is close to a place where there is a certain difference, such as the difference between the voltage value Vb and the voltage value Vc. It can be determined that they are equal parts.

  In the image processing unit 14 (FIG. 1), for example, a difference image C ′ as shown in FIG. 14 is obtained. The image B ′ shows an example of an image based on a sensor detection signal from the sensor element 33 obtained in a state where the illumination light Lon from the backlight 15 is irradiated. The image A ′ shows an example of an image based on a sensor detection signal from the sensor element 33 obtained in a state where the illumination light Lon from the backlight 15 is not irradiated. The position of the object can be detected from the difference image C ′ between the images A ′ and B ′.

[Description of afterimage during sensor operation]
In the case where the sensor operation as described above is performed using the sensor element 33 of FIG. 5, the state of the storage capacitor C0 before the reset may remain despite the reset operation. If the state of the storage capacitor C0 before the reset remains, a so-called afterimage occurs during the next read operation, and a good detection result cannot be obtained.

  Hereinafter, the cause of an afterimage that occurs when a PIN photodiode is used as the photoelectric conversion element PD1 will be described with reference to FIGS. In the case of a PIN type photodiode, the i layer is in an accumulation state (saturated state), a depletion state, or an inversion state depending on the gate voltage. In the case of a thin film photodiode, several hundreds of times are required to make a transition from a state where charge is induced at the gate electrode side interface in the accumulation state or inversion state (FIG. 7A) to a depletion state (FIG. 7B). Time on the order of μsec is required. Normally, a PIN photodiode is used in a depletion state because the photosensitivity is maximized in the depletion state. However, when a strong external light is irradiated and Vnp <0V is reached, the PIN type photodiode shifts to an accumulation state. Vnp is the potential of the n-type semiconductor region 54B (cathode electrode 56) viewed from the p-type semiconductor region 54A (anode electrode 55) side. For this reason, even if the environment changes to a dark state immediately after irradiation with strong external light and a reset operation is performed and the state returns to the state of Vnp> 0, the transition from the accumulation state to the depletion state cannot be made for several hundred μsec. . At this time, it is known that the capacitance characteristics of the PIN diode differ between the depletion state and the accumulation state or the inversion state due to the influence of the charge induced on the surface. That is, as shown in FIGS. 7A and 7B, the capacitance Cgp between the gate electrode 52 and the p-type semiconductor region 54A (anode electrode 55) is large in the accumulation state and small in the depletion state.

  On the other hand, the storage capacitor C0 is instantaneously stabilized at a predetermined reset voltage Vrst when the reset transistor Tr1 is turned on. The potential of the storage capacitor C0 is affected and slightly fluctuates from a predetermined reset voltage Vrst. FIG. 8 shows an example of the capacitors C10, C20, C30, and C40 generated by the capacitive coupling.

  Here, as described above, when the capacitance C10 (Cgp) of the PIN photodiode (photoelectric conversion element PD1) connected to the storage capacitor C0 differs between the depletion state and the accumulation or inversion normal state, The total coupling amount changes depending on the state. As a result, the light information received immediately before the reset operation remains in the storage capacitor C0. This causes an afterimage problem.

  As described above, the state transition in the PIN photodiode takes a time of several hundred μsec. From this, for example, it is considered that the afterimage problem can be improved by applying the reset voltage Vrst to the storage capacitor C0 continuously or intermittently for about 100 μsec. In practice, however, the afterimage starts to decrease greatly when the period during which the reset voltage Vrst is applied exceeds a 1H (horizontal scanning) period (for example, 32 μsec) as will be described later.

[Specific example of reset voltage control operation]
10A to 10C show timing waveforms representing an example of a sensor operation (imaging operation) in this display device. In particular, FIG. 10A shows a voltage waveform of the reset control signal V (Reset) applied to the gate of the reset transistor Tr1 in FIG. FIG. 10B shows the voltage waveform of the read control signal V (Read) applied to the selection / reading transistor Tr3. FIG. 10C shows the waveform of the voltage Vs at the storage node P1 on one end side of the storage capacitor C0. “Bright” shown in the upper part of FIG. 10A indicates a period in which the backlight 15 is on (bright period), and “dark” indicates a period in which the backlight 15 is off (dark period).

First, at the operating point A shown in FIG. 10C, the voltage Vs of the storage node P1 is instantaneously stabilized at a predetermined reset voltage Vrst because the reset transistor Tr1 is turned on. Subsequently, at the operating point B, the voltage Vs of the storage node P1 is caused by capacitive coupling as shown in FIG. 8 as the resetting transistor Tr1 shifts to the OFF state.
Vcd1 = (VH−VL) × C30 / (C10 + C20 + C30 + C40)
Only voltage drop.
Subsequently, at the operating point C (light period), light is photoelectrically converted by the photoelectric conversion element PD1, and the voltage rises. Thereafter, when the selection / reading transistor Tr3 is turned on, the voltage is output as a detection signal.

Thereafter, as with the operating points A, B, and C, it can be easily understood that the operating voltages of the operating points D, E, F, G, and H are obtained during the dark period. Subsequently, the potential converted by the photoelectric conversion element PD1 at the operating point J in the bright period again,
Q> (VDD−Vrst) / (C10 + C20 + C30 + C40)
In this state, the so-called saturation state is reached, and the voltage Vs of the storage node P1 at the operating point J settles to an arbitrary potential. At this time, since the coupling capacitance C10 of the photoelectric conversion element PD1 is larger than that in the non-saturated state as described above, the capacitance coupling amount Vcd2 received at the next operating point L is a potential smaller than Vcd1. It becomes.
For this reason, even if the same amount of light is received after desaturation and after saturation, the output signal voltages are different as in the operating point F and the operating point M, and it looks like an afterimage when viewed from the signal potential. At this time, the reset transistor Tr1 is driven and controlled so that the predetermined reset voltage Vrst is applied to the storage capacitor C0 continuously or intermittently over a period exceeding 1H (horizontal scanning) period, preferably over a period of 100 μsec or more. Thus, since the change in the capacitance of the coupling capacitor C10 of the photoelectric conversion element PD1 is substantially eliminated, Vcd1 = Vcd2 and the afterimage phenomenon is substantially eliminated.

  FIG. 11B shows a first example of a preferable voltage waveform as a reset control signal V (Reset) for eliminating afterimages. FIG. 11C shows a second example of a preferable voltage waveform. FIG. 11A shows the voltage waveform of the comparative example.

  For example, as shown in FIG. 11B, a signal having a voltage pulse width of a period exceeding 1H (horizontal scanning) period (for example, 100 μsec or more) as a reset control signal V (Reset) at the gate terminal of the reset transistor Tr1. Apply. Thereby, the predetermined reset voltage Vrst is continuously applied to the storage capacitor C0 over a period exceeding 1H (horizontal scanning) period. Thereby, even when the photoelectric conversion element PD1 is saturated, the accumulated charge accumulated in the accumulation capacitor C0 can be surely reset so that no afterimage is generated.

  Further, for example, as shown in FIG. 11C, the reset control signal V (Reset) is applied to the gate terminal of the resetting transistor Tr1 at 2 or more in a period exceeding 1H (horizontal scanning) period (for example, 100 μsec or more). These intermittent voltage pulse signals may be applied. Thereby, the predetermined reset voltage Vrst is intermittently given to the storage capacitor C0 over a period exceeding 1H period.

  By performing reset control as shown in FIGS. 11B and 11C, even if the photoelectric conversion element PD1 is saturated, the accumulated charge accumulated in the accumulation capacitor C0 so that no afterimage is generated. Can be reliably reset. On the other hand, as shown in FIG. 11A, when a reset control signal V (Reset) having a voltage pulse width for a short time of 1H (horizontal scanning) or less is applied, a predetermined reset voltage Vrst is applied. However, since only a short period of 1H or less is given, the accumulated charge accumulated in the accumulation capacitor C0 may not be sufficiently reset.

  FIG. 9 shows the result of verifying the afterimage characteristics in the sensor element 33 shown in FIG. 5 by experiments. This characteristic is that in the light period of FIG. 10, the amount of light that saturates the photoelectric conversion element PD1 is incident on the sensor element 33, and no light is incident on the sensor element 33 in the dark period. The signal amount (afterimage signal amount) is plotted on the vertical axis. The horizontal axis indicates the period during which the reset voltage Vrst is applied. As a measurement condition in FIG. 9, 1 frame period is 16.6 msec, and 1H (horizontal scanning) period is 32 μsec. As can be seen from FIG. 9, the longer the period during which the reset voltage Vrst is applied, the fewer afterimage signals. In particular, after the 1H period, the afterimage signal starts to decrease greatly. Further, the afterimage signal was invisible at about 10% or less compared with the maximum afterimage false signal. Therefore, for a period exceeding 1H, in practice, the period for applying the reset voltage Vrst is sufficient if it is 100 μsec or more, and preferably 140 μsec or more for which the afterimage signal becomes zero.

  As described above, according to the display device with an input function according to the present embodiment, the predetermined reset voltage Vrst is continuously or intermittently applied to the storage capacitor C0 over a period exceeding 1H period. Even when the conversion element PD1 is saturated, the stored charge stored in the storage capacitor C0 can be reliably reset so that the afterimage is reduced, and a stable detection operation can be performed. Thereby, for example, it is possible to perform a sensor operation that accurately detects the position of an object that moves faster.

[Execution example of application program]
Next, with reference to FIGS. 15 to 18, some application program execution examples by the application program execution unit 11 using the position information of the object detected by the proximity object detection process described above will be described.

  The first example shown in FIG. 15A is an example in which the surface of the I / O display panel 20 is touched with the fingertip 61 and the locus of the touched part is displayed on the screen as a drawing line 611. .

  The second example shown in FIG. 15B is for gesture recognition using a hand shape. Specifically, the shape of the hand 62 touching (or close to) the I / O display panel 20 is recognized, the recognized hand shape is displayed as an image, and the display object movement 621 performs some processing. Is to do.

  In the third example shown in FIG. 16, the hand 63A in the closed state is changed to the hand 63B in the open state, and the contact or proximity of the hand in each state is recognized by the I / O display panel 20. Thus, processing based on the image recognition is executed. By performing processing based on these recognitions, for example, an instruction such as zoom-in can be given. In addition, since such an instruction can be performed, for example, an operation in which the I / O display panel 20 is connected to a personal computer device and a command is switched on the computer device can be more naturally formed by the image recognition. Can be entered.

  In the fourth example shown in FIG. 17, two I / O display panels 20 are prepared, and the two I / O display panels 20 are connected by some transmission means. With such a configuration, an image in which contact or proximity is detected in one I / O display panel 20 is transmitted to the other I / O display panel 20 to be displayed and communicated between users who operate both display panels. You may make it take. For example, as shown in FIG. 17, there is a process of transmitting the image of the handprint of the hand 65 recognized by the one I / O display panel 20 and displaying the same bill 642 on the other I / O display panel 20. It becomes possible. Further, for example, it is possible to perform processing such as sending the locus 641 displayed by touching the other I / O display panel 20 with the hand 64 to the one I / O display panel 20 for display. In this way, there is a possibility that a new communication tool can be obtained by transmitting a drawing state as a moving image and sending handwritten characters or figures to the other party. As such an example, for example, it is assumed that the I / O display panel 20 is applied to a display panel of a mobile phone terminal. Although FIG. 17 shows an example in which two I / O display panels 20 are prepared, it is also possible to perform the same processing by connecting three or more I / O display panels 20 with a transmission means.

  Further, as shown in the fifth example of FIG. 18, the brush 66 is used to touch the surface of the I / O display panel 20 so as to write characters, and the portion touched by the brush 66 is changed to the I / O. By displaying the image 661 on the display panel 20, handwritten input with a brush can be performed. In this case, it is possible to recognize and realize even a fine touch of a brush. In the case of conventional handwriting recognition, for example, in some digitizers, a special pen tilt is realized by electric field detection, but in this example, by detecting the contact surface itself of a real brush, it is more realistic. Information can be input in a sense.

<Modules and application examples>
Next, application examples of the display device with an input function described above will be described with reference to FIGS. This display device can be applied to electronic devices in various fields that display a video signal input from the outside or a video signal generated inside as an image or video. For example, the present invention can be applied to electronic devices such as a television set, a digital camera, a notebook personal computer, a mobile terminal device such as a mobile phone, and a video camera as described below.

(Application example 1)
FIG. 19 illustrates an appearance of a television device as a first example of an electronic apparatus. The television apparatus includes a video display screen unit 510 including a front panel 511 and a filter glass 512, for example. The display device with an input function described above can be applied to the video display screen unit 510 in such a television device.

(Application example 2)
20A and 20B show the appearance of a digital camera as a second example of an electronic device. The digital camera includes, for example, a flash light emitting unit 521, a display unit 522, a menu switch 523, and a shutter button 524. The display device with an input function described above can be applied to the display portion 522 in such a digital camera.

(Application example 3)
FIG. 21 illustrates an appearance of a notebook personal computer as a third example of the electronic apparatus. This notebook personal computer has, for example, a main body 531, a keyboard 532 for inputting characters and the like, and a display unit 533 for displaying an image. The display device with an input function described above can be applied to the display portion 533 in such a notebook personal computer.

(Application example 4)
FIG. 22 shows the appearance of a video camera as a fourth example of the electronic apparatus. This video camera includes, for example, a main body 541, a subject shooting lens 542 provided on the front side surface of the main body 541, a start / stop switch 543 at the time of shooting, and a display 544. The display device with an input function described above can be applied to the display portion 544 in such a video camera.

(Application example 5)
FIGS. 23A to 23G show the appearance of a mobile phone as a fifth example of the electronic apparatus. For example, the mobile phone is obtained by connecting an upper housing 710 and a lower housing 720 with a connecting portion (hinge portion) 730, and includes a display 740, a sub-display 750, a picture light 760, and a camera 770. Yes. The display device with an input function described above can be applied to the display 740 or the sub display 750 in such a cellular phone.

<Modification of the first embodiment>
The present invention is not limited to the first embodiment and application examples, and various modifications can be made. For example, in the first embodiment and the like, the case of the I / O display panel 20 including the liquid crystal panel including the backlight 15 has been described. However, the display backlight may also serve as the detection illumination. In addition, illumination dedicated to detection may be provided. When providing illumination for detection, it is more preferable to use light in a wavelength region other than the visible light region (for example, infrared light).

  Further, in the first embodiment and the like, the display device with an input function having the display panel (I / O display panel 20) including the plurality of display pixels 31RGB and the plurality of sensor elements 33 has been described. Is applicable to devices other than display devices. For example, the present invention can be applied as a simple sensor device having no display function. In this case, for example, instead of the I / O display panel 20, a sensor panel configured by arranging only a plurality of sensor elements 33 in a matrix on one plane without providing the display pixels 31RGB is provided. It ’s fine.

<Second Embodiment>
[Overall configuration of radiation imaging apparatus]
In this embodiment, a configuration example in which the present invention is applied to a radiation imaging apparatus will be described. FIG. 24 illustrates a system configuration of the photoelectric conversion apparatus 102 in the radiation imaging apparatus 101 according to the present embodiment. The radiation imaging apparatus 101 is obtained by providing a wavelength converter 140 on the photoelectric conversion apparatus 102 as shown in FIG. The radiation imaging apparatus 101 reads information based on radiation by converting the wavelength of radiation represented by α rays, β rays, γ rays, and X rays by a wavelength converter 140.

  The wavelength converter 140 converts the wavelength of the above radiation into the sensitivity range of the photoelectric conversion device 102. The wavelength converter 140 is a phosphor (for example, a scintillator) that converts radiation such as X-rays into light (for example, visible light) having a longer wavelength than the radiation. Specifically, a phosphor film such as CsI, NaI, or CaF2 is formed on the upper surface of the planarizing film made of an organic planarizing film, a spin-on-glass material, or the like.

  The photoelectric conversion device 102 includes a pixel unit 112 on a substrate 111, and, for example, a row scanning unit (vertical driving unit) 113, a horizontal selection unit 114, and a column scanning unit (horizontal driving unit) 115 around the pixel unit 112. In addition, a peripheral circuit unit (drive unit) including the system control unit 116 is provided.

  The pixel unit 112 includes a unit pixel 120 (hereinafter simply referred to as a “pixel”) having a photoelectric conversion unit (a photoelectric conversion element PD11 described later) that generates and accumulates photoelectric charges having a charge amount corresponding to the amount of incident light. There are cases where it is described), a plurality of two-dimensionally arranged in a matrix.

  The pixel portion 112 is further provided with a pixel drive line 117 for each pixel row in the matrix-like pixel arrangement along the row direction (pixel arrangement direction of the pixel row), and a vertical signal line (readout) for each pixel column. Line 118 is wired along the column direction (pixel arrangement direction of the pixel column). The pixel drive line 117 transmits a drive signal for reading a signal from the pixel. As the pixel drive line 117, for example, a read control signal line Read and a reset control signal line Reset connected to a pixel circuit in FIG. One end of the pixel drive line 117 is connected to an output end corresponding to each row of the row scanning unit 113.

  The row scanning unit 113 is configured by a shift register, an address decoder, or the like, and is a pixel driving unit that drives each pixel of the pixel unit 112, for example, in units of rows. A signal output from each unit pixel of the pixel row selected and scanned by the row scanning unit 113 is supplied to the horizontal selection unit 114 through each of the vertical signal lines 118. The horizontal selection unit 114 is configured by an amplifier, a horizontal selection switch, or the like provided for each vertical signal line 118.

  The column scanning unit 115 is configured by a shift register, an address decoder, and the like, and sequentially drives while scanning each horizontal selection switch of the horizontal selection unit 114. By the selective scanning by the column scanning unit 115, the signal of each pixel transmitted through each of the vertical signal lines 118 is sequentially output to the horizontal signal line 119 and transmitted to the outside of the substrate 111 through the horizontal signal line 119.

  A circuit portion including the row scanning unit 113, the horizontal selection unit 114, the column scanning unit 115, and the horizontal signal line 119 is configured by using a circuit formed on the substrate 111 and / or an external control IC in combination. Alternatively, these circuit portions may be formed on another substrate connected by a cable or the like.

  The system control unit 116 receives a clock given from the outside of the substrate 111, data for instructing an operation mode, and the like, and outputs data such as internal information of the photoelectric conversion device 102. The system control unit 116 further includes a timing generator that generates various timing signals, and the row scanning unit 113, the horizontal selection unit 114, the column scanning unit 115, and the like based on the various timing signals generated by the timing generator. Drive control of the peripheral circuit section is performed.

[Circuit Configuration of Unit Pixel 120 (Sensor Element)]
The circuit configuration of the unit pixel 120 includes an active type and a passive type. Hereinafter, each type of circuit configuration example will be described with reference to FIGS. 26 to 29.

(First Configuration Example of Active Pixel Circuit)
FIG. 26 shows a first configuration example in which the unit pixel 120 is configured by an active pixel circuit. In the first active configuration example, the unit pixel 120 is provided with a photoelectric conversion element PD11, a storage node N (charge storage unit), a reset transistor Tr11, an amplification transistor Tr12, and a selection / read-out transistor Tr13. Yes. For example, two wirings, specifically, a read control signal line Read and a reset control signal line Reset are wired for each pixel row as the pixel drive line 117 for the unit pixel 120.

  The photoelectric conversion element PD11 generates an electric charge according to the amount of incident light, and is composed of, for example, a PIN type photodiode. As shown in FIG. 30 described later, the PIN photodiode includes a p-type semiconductor region (p-type semiconductor layer 164), an n-type semiconductor region (n-type semiconductor layer 171), a p-type semiconductor region, and an n-type semiconductor. And an intrinsic semiconductor region (i-type semiconductor layer 170) formed between the regions. In the photoelectric conversion element PD11, an anode electrode is connected to the p-type semiconductor region, and a cathode electrode is connected to the n-type semiconductor region. The cathode electrode of the photoelectric conversion element PD11 is connected to a power supply line SVDD that supplies a power supply voltage VDD. One end (anode electrode) of the photoelectric conversion element PD11 is connected to one end (drain terminal) of the reset transistor Tr11.

  The storage node N is connected to one end (anode electrode) of the photoelectric conversion element PD11, one end (drain terminal) of the reset transistor Tr11, and the gate terminal of the amplification transistor Tr12. The storage node N stores charges converted by the photoelectric conversion element PD11. The voltage value Vs of the storage node N varies in voltage according to the stored charge.

  Each of the resetting transistor Tr11, the amplifying transistor Tr12, and the selection / reading transistor Tr13 includes, for example, a thin film transistor (TFT).

  The gate terminal of the reset transistor Tr11 is connected to a reset control signal line Reset that supplies a reset control signal V (Reset), and the source terminal is connected to a supply line SVSS of a predetermined voltage (reset voltage Vrst). The drain terminal of the resetting transistor Tr11 and the gate terminal of the amplifying transistor Tr12 are connected to the storage node N. The drain terminal of the amplifying transistor Tr12 is connected to the power supply line SVDD that supplies the power supply voltage VDD. The source terminal of the amplifying transistor Tr12 is connected to the drain terminal of the selection / reading transistor Tr13. The selection / reading transistor Tr13 has a gate terminal connected to a read control signal line Read that supplies a read control signal V (Read), and a source terminal connected to a read line 41.

  The reset transistor Tr11 applies a predetermined reset voltage Vrst to the storage node N, thereby resetting the voltage value Vs of the storage node N to a predetermined reset voltage Vrst (to release the stored charge of the storage node N). It is. In this embodiment, the reset control applied by the row scanning unit 113 and the system control unit 116 in FIG. 24 to the gate terminal of the reset transistor Tr11 as shown in an operation timing example (FIGS. 31, 33, etc.) described later. By controlling the pulse period of the signal V (Reset), the predetermined reset voltage Vrst is applied to the storage node N continuously or intermittently over a period exceeding 1H (horizontal scanning) period.

The amplifying transistor Tr12 and the selection / reading transistor Tr13 form a signal reading circuit, and a voltage value corresponding to the accumulated charge at the accumulation node N is read and output as a sensor detection signal. The sensor detection signal is output (read) to the vertical signal line (read line) 118 at a timing when the selection / read transistor Tr3 is turned on in response to the read control signal V (Read) applied to the gate terminal. It is like that.
The amplifying transistor Tr12 and the selection / reading transistor Tr13 correspond to a specific example of “reading means” in the present invention.

  A constant current source 131 is connected to one end of the vertical signal line 118. The vertical signal line 118 is also connected to an amplifier 133 that constitutes an input unit of the horizontal selection unit 114 in FIG. The signal output to the vertical signal line 118 is input to the amplifier 33 for each pixel column.

(Second Configuration Example of Active Pixel Circuit)
FIG. 27 shows a second configuration example in which the unit pixel 120 is configured by an active pixel circuit. In the second configuration example, the positional relationship between the photoelectric conversion element PD11 and the reset transistor Tr11 is different from the first active configuration example (FIG. 26). In the first configuration example, the storage node N is formed between the anode electrode (p-type semiconductor region) of the photoelectric conversion element PD11 and the drain terminal of the reset transistor Tr11. An accumulation node N is formed between the cathode electrode (n-type semiconductor region) of the conversion element PD11 and the drain terminal of the reset transistor Tr11. The source terminal of the reset transistor Tr11 is connected to the power supply line SVDD that supplies the power supply voltage VDD. The anode electrode of the photoelectric conversion element PD11 is connected to a power supply line SVSS that supplies a predetermined voltage.

(First configuration example of passive pixel circuit)
FIG. 28 shows a first configuration example in which the unit pixel 120 is configured by a passive pixel circuit. In the first configuration example of the passive type, the unit pixel 120 includes a photoelectric conversion element PD11, a storage node N, and a selection / readout transistor Tr13. A charge amplifier circuit that constitutes an input unit of the horizontal selection unit 114 in FIG. 24 is connected to the vertical signal line 118. The charge amplifier circuit includes a capacitor (feedback capacitor) 191, a charge amplifier 192, and a switch 193.

  The storage node N is formed between the anode electrode (p-type semiconductor region) of the photoelectric conversion element PD11 and the drain terminal of the select / read transistor Tr13. The cathode electrode (n-type semiconductor region) of the photoelectric conversion element PD11 is connected to the power supply line SVDD that supplies the power supply voltage VDD.

(Second configuration example of passive pixel circuit)
FIG. 29 shows a second configuration example in which the unit pixel 120 is configured by a passive pixel circuit. In the second configuration example, the positional relationship between the storage node N and the photoelectric conversion element PD11 is different from that of the passive first configuration example (FIG. 28). In the second configuration example, the storage node N is formed between the cathode electrode (n-type semiconductor region) of the photoelectric conversion element PD11 and the drain terminal of the selection / read transistor Tr13. The anode electrode (p-type semiconductor region) of the photoelectric conversion element PD11 is connected to a power supply line SVSS that supplies a predetermined voltage.

  In the passive pixel circuits of FIGS. 28 and 29, unlike the active pixel circuits of FIGS. 26 and 27, the reset transistor Tr11 is not provided. In the reset operation, the reset control signal V (Reset) is not used. In this passive pixel circuit, the sensor detection signal readout operation and the normal reset operation of the storage node N are performed substantially simultaneously. The read operation is performed at the timing when the selection / read transistor Tr3 is turned on according to the read control signal V (Read) applied to the gate terminal. When the selection / readout transistor Tr3 is turned on, the accumulated charge of the accumulation node N is accumulated in the capacitor 191 of the charge amplifier circuit, and a signal voltage corresponding to the accumulated charge is output (read) from the charge amplifier 192. Accompanying this read operation, the accumulated charge at the accumulation node N is reset to a predetermined reset voltage Vrst. The switch 193 of the charge amplifier circuit is in an on state before the read operation and is turned off in the read operation. The charge accumulated in the capacitor 191 of the charge amplifier circuit is reset by turning on the switch 193.

  As described above, in the passive pixel circuit, the read operation also serves as a normal reset operation. However, the switch 193 of the charge amplifier circuit is turned on in a state where the selection / read transistor Tr3 is turned on as in the read operation. An additional reset operation can be intermittently performed separately by turning on the. In the present embodiment, the row scanning unit 113 and the system control unit 116 in FIG. 24 control the operation timings as shown in the operation timing examples (FIG. 32, FIG. 34, etc.) described later, so that the passive type In this pixel circuit, the predetermined reset voltage Vrst is intermittently applied to the storage node N over a period exceeding 1H (horizontal scanning) period.

  Note that the present invention is not limited to the above example. In a passive pixel circuit, for example, a reset changeover switch may be separately provided on the vertical signal line 118, and the reset operation may be performed by the changeover operation of the changeover switch.

[Cross-sectional structure of pixel]
FIG. 4 illustrates a cross-sectional structure of a main part (unit pixel 120) of the photoelectric conversion device 102. Here, a case where the unit pixel 120 is the first active configuration example (FIG. 26) will be described as an example.

In this photoelectric conversion device 102, a gate electrode 162 made of Ti, Al, Mo, W, Cr, or the like is formed on an insulating substrate 161 such as a glass substrate, and SiNx, SiO ₂ or the like is formed on the gate electrode 162. A gate insulating film 163 is formed. On the gate insulating film 163, for example, a p-type semiconductor layer (p + region) 164 (first semiconductor layer) constituting a PIN type photodiode (photoelectric conversion element PD11) is formed.

  The p-type semiconductor layer 164 also serves as a lower electrode for reading out signal charges photoelectrically converted by the photoelectric conversion element PD11. A semiconductor layer 165 of a pixel transistor such as the amplifying transistor Tr12 is further formed on the gate insulating film 163. In the semiconductor layer 165, LDDs (Lightly Doped Drain) 165a and 165b are provided between the channel region and the drain / source region in order to reduce leakage current. The semiconductor layer 165 is made of, for example, microcrystalline silicon or polycrystalline silicon.

A first interlayer insulating film 166 made of SiNx, SiO ₂ or the like is provided on the p-type semiconductor layer 164 and the semiconductor layer 165 of the pixel transistor. On the first interlayer insulating film 166, a wiring layer 167 including a signal line for reading and various wirings is formed of Ti, Al, Mo, W, Cr, or the like. On the wiring layer 167, a second interlayer insulating film 168 made of SiNx, SiO ₂ , an organic insulating film or the like is provided.

  A contact hole 169 is formed in the insulating layer composed of the first and second interlayer insulating films 166 and 168. On the second interlayer insulating film 168, a third semiconductor layer (i-type semiconductor layer 170) having a conductivity type between p-type and n-type is formed. The area of the i-type semiconductor layer 170 is larger than the opening area on the upper side of the contact hole 169. The i-type semiconductor layer 170 is in contact with the p-type semiconductor layer 164 through a contact hole 169.

On the i-type semiconductor layer 170, a second semiconductor layer (for example, an n-type semiconductor layer (n + region) 171) having substantially the same shape as the i-type semiconductor layer 170 is stacked. The p-type semiconductor layer 164 (first semiconductor layer), the i-type semiconductor layer 170 (third semiconductor layer), and the n-type semiconductor layer 171 (second semiconductor layer) constitute a photoelectric conversion element PD11 (PIN type photodiode). Has been.
As described above, in the first embodiment, the example of the photoelectric conversion element PD1 (see FIG. 6) in which the PIN structure is formed in the in-plane direction (horizontal direction) has been described. However, in the present embodiment, the photoelectric conversion is performed. The element PD11 has a PIN structure formed in the stacking direction (perpendicular to the light incident direction).

  In the photoelectric conversion element PD11, the semiconductor layers 164, 170, and 171 can be formed of amorphous silicon, microcrystalline silicon, polycrystalline silicon, or the like. Spectral sensitivity may be changed by introducing a material such as germanium or carbon into these silicon. The photoelectric conversion element PD11 may have a reverse configuration in which the lower side is n-type and the upper side is p-type.

  On the n-type semiconductor layer 171, an upper electrode 172 for applying a prescribed voltage to the photoelectric conversion element PD11 is formed of a transparent conductive film such as ITO (Indium Tin Oxide). A power supply wiring 173 for supplying a voltage to the upper electrode 172 is provided on the upper electrode 172. The power supply wiring 173 is made of a material having a lower resistance than the transparent conductive film of the upper electrode 172, that is, Ti, Al, Mo, W, Cr, or the like. The power supply wiring 173 is formed over the entire surface of the pixel portion 112 in a mesh shape so as to surround the unit pixel 120, for example. A protective film (not shown) made of SiN or the like may be further formed on the upper electrode 172.

[Timing example of read operation and reset operation]
(First example of operation timing applied to an active pixel circuit)
FIG. 31 illustrates a first example of the imaging operation timing of the photoelectric conversion device 102 to which the active pixel circuit illustrated in FIGS. 26 and 27 is applied. FIG. 33 shows a timing chart corresponding to the operation timing shown in FIG. The arrow extending downward from above shown in the upper part of FIG. 31 schematically shows the operation timing of the photoelectric conversion device 102. The horizontal direction corresponds to time, and the vertical direction corresponds to the scanning line of the pixel portion 112 (FIG. 24). FIG. 31 shows an example in which a reading operation (scanning) is performed in a line sequential manner from the upper horizontal line to the lower horizontal line. In FIG. 31, “Read” indicates that a read operation is performed, and “Reset” indicates that a normal (first) reset operation is performed. “Ex-Reset” represents performing an additional (second) reset operation within one frame period. “X-ray” represents an imaging period (exposure period) during which the pixel unit 112 is irradiated with radiation (for example, X-rays).

  As shown in FIG. 31, while performing the read operation sequentially from the upper line to the lower line, the normal (first) reset operation is sequentially performed from the upper line to the lower line after a predetermined period. Next, an additional (second) reset operation is sequentially performed from the upper line to the lower line after a predetermined period. These are performed within one frame period. The read operation is performed at the timing when the read control signal V (Read) is applied to the gate terminal of the selection / read transistor Tr13. The reset operation is performed at the timing when the reset control signal V (Reset) is applied to the gate terminal of the reset transistor Tr11.

  FIG. 33 shows the application timing of the reset control signal V (Reset) applied to the gate terminal of the reset transistor Tr11 and the application of the read control signal V (Read) applied to the gate terminal of the selection / read transistor Tr13. The timing is shown for 6 horizontal lines each. For example, the reset control signal V (Reset) applied to the gate terminal of the reset transistor Tr11 on the uppermost first horizontal line is V (Reset1), and the reset transistor Tr11 on the next lower second horizontal line is set. The reset control signal V (Reset) applied to the gate terminal of V is set to V (Reset2). In the operation timing examples of FIGS. 31 and 33, two reset operations are performed after the read operation within one frame period. Thus, two intermittent voltage pulse signals are applied to the gate terminal of the reset transistor Tr11 as a reset control signal V (Reset) within a period exceeding 1H (horizontal scanning) period. Thus, the predetermined reset voltage Vrst is intermittently supplied to the storage node N over a period exceeding 1H period.

  FIG. 31 shows an example in which the reset operation is performed twice within one frame period. However, the reset operation may be performed three times or more within one frame period after the read operation.

(First example of operation timing applied to a passive pixel circuit)
FIG. 32 illustrates a first example of the timing of the imaging operation of the photoelectric conversion device 102 to which the passive pixel circuit illustrated in FIGS. 28 and 29 is applied. FIG. 34 shows a timing chart corresponding to the operation timing shown in FIG. In the example of FIG. 32, as in the example of FIG. 31, an example is shown in which the reading operation (scanning) is performed in a line sequential manner from the upper horizontal line to the lower horizontal line. As in the example of FIG. 31, “Read” in FIG. 32 indicates that a read operation is performed, and “Reset” indicates that a normal (first) reset operation is performed. “Ex-Reset” represents performing an additional (second) reset operation within one frame period. “X-ray” represents an imaging period (exposure period) during which the pixel unit 112 is irradiated with radiation (for example, X-rays). Note that in the passive pixel circuit as described above, the read operation also serves as a normal reset operation, and thus the read operation and the first reset operation are shown as the same timing.

  As shown in FIG. 32, the read operation is sequentially performed from the upper line to the lower line. At this time, the normal (first time) reset operation is performed sequentially from the upper line to the lower line. Next, an additional (second) reset operation is sequentially performed from the upper line to the lower line after a predetermined period. These are performed within one frame period. As described above, the read operation is performed, for example, by turning on the read control signal V (Read) at the gate terminal of the select / read transistor Tr13 and turning off the switch 193 of the charge amplifier circuit. The additional reset operation is performed, for example, by turning on the switch 193 of the charge amplifier circuit while the selection / reading transistor Tr3 is turned on as in the read operation.

  FIG. 34 shows the application timing of the read control signal V (Read) applied to the gate terminal of the selection / readout transistor Tr13 for six horizontal lines. 32 and FIG. 34, the reset operation is performed twice after the read operation within one frame period. Thus, the predetermined reset voltage Vrst is intermittently supplied to the storage node N over a period exceeding 1H period.

  Note that although FIG. 32 shows an example in which the reset operation is performed twice within one frame period, the reset operation may be performed three or more times within one frame period after the read operation.

(Second example of operation timing applied to an active pixel circuit)
FIG. 35 illustrates a second example of the imaging operation timing of the photoelectric conversion device 102 to which the active pixel circuit illustrated in FIGS. 26 and 27 is applied. FIG. 36 shows a timing chart corresponding to the operation timing shown in FIG. In the example of FIG. 35, as in the example of FIG. 31, a read operation (scanning) is performed in a line sequential manner from the upper horizontal line to the lower horizontal line. As in the example of FIG. 31, “Read” in FIG. 32 indicates that a read operation is performed, and “Reset” indicates that a reset operation is performed. “X-ray” represents an imaging period (exposure period) during which the pixel unit 112 is irradiated with radiation (for example, X-rays).

  As shown in FIG. 35, the read operation is sequentially performed from the upper line to the lower line, and the reset operation is sequentially performed from the upper line to the lower line after a predetermined period. 36 shows the application timing of the reset control signal V (Reset) applied to the gate terminal of the reset transistor Tr11 and the application of the read control signal V (Read) applied to the gate terminal of the selection / read transistor Tr13. The timing is shown for 6 horizontal lines, as in the example of FIG. 35 and 36, the reset operation is performed only once after the read operation within one frame period. With this one reset operation, a continuous voltage pulse signal exceeding the 1H (horizontal scanning) period is applied as the reset control signal V (Reset) to the gate terminal of the reset transistor Tr11. Thus, the predetermined reset voltage Vrst is continuously applied to the storage node N over a period exceeding 1H period.

(Third example of operation timing applied to an active pixel circuit)
FIG. 37 illustrates a third example of the timing of the imaging operation of the photoelectric conversion device 102 to which the active pixel circuit illustrated in FIGS. 26 and 27 is applied. The example of FIG. 36 shows an example in which the reading operation (scanning) is performed in a line sequential manner from the upper horizontal line to the lower horizontal line, as in the example of FIG. As in the example of FIG. 31, “Read” in FIG. 32 indicates that a read operation is performed, and “Reset” indicates that a normal (first) reset operation is performed. “Ex-Reset” represents performing an additional (second) reset operation within one frame period. “X-ray” represents an imaging period (exposure period) during which the pixel unit 112 is irradiated with radiation (for example, X-rays). As a result, as in the operation timing examples of FIGS. 31 and 33, two reset operations are performed after the read operation within one frame period. Thus, two intermittent voltage pulse signals are applied to the gate terminal of the reset transistor Tr11 as a reset control signal V (Reset) within a period exceeding 1H (horizontal scanning) period. Thus, the predetermined reset voltage Vrst is intermittently supplied to the storage node N over a period exceeding 1H period.

  As shown in FIG. 37, while performing a read operation sequentially from the upper line to the lower line, a normal (first) reset operation is performed from the upper line to the lower line after a predetermined period. Next, an additional (second) reset operation is performed after a predetermined period. Here, in the example of FIG. 31, the second reset operation is performed line-sequentially from the upper line to the lower line, but in the example of FIG. 37, the reset operation is performed collectively for all pixels. Yes. The reset operation at this time is performed by applying a reset control signal V (Reset) to the gate terminals of the reset transistors Tr11 for all pixels.

(Second example of operation timing applied to passive pixel circuit)
FIG. 38 illustrates a second example of the imaging operation timing of the photoelectric conversion device 102 to which the passive pixel circuit illustrated in FIGS. 28 and 29 is applied. The example of FIG. 38 shows an example in which the reading operation (scanning) is performed in a line sequential manner from the upper horizontal line to the lower horizontal line, as in the example of FIG. As in the example of FIG. 31, “Read” in FIG. 38 indicates that a read operation is performed, and “Reset” indicates that a normal (first) reset operation is performed. “Ex-Reset” represents performing an additional (second) reset operation within one frame period. “X-ray” represents an imaging period (exposure period) during which the pixel unit 112 is irradiated with radiation (for example, X-rays). Note that in the passive pixel circuit as described above, the read operation also serves as a normal reset operation, and thus the read operation and the first reset operation are shown as the same timing.

  As shown in FIG. 38, the read operation is sequentially performed from the upper line to the lower line. At this time, the normal (first time) reset operation is performed sequentially from the upper line to the lower line. Next, an additional (second) reset operation is performed after a predetermined period. Here, in the example of FIG. 32, the second reset operation is performed line-sequentially from the upper line to the lower line, but in the example of FIG. 38, the reset operation is performed collectively for all pixels. Yes. For example, the reset operation at this time is performed by turning on the switch 193 of the charge amplifier circuit in a state where the selection / readout transistor Tr3 is turned on as in the read operation, for all pixels.

[Relationship between reset period length and afterimage (residual voltage)]
Next, the relationship between the length of the reset period (period in which the predetermined reset voltage Vrst is applied to the storage node N) and the afterimage (residual voltage) in the radiation imaging apparatus will be considered.

  FIG. 39 shows a first comparative example of operation timing applied to an active pixel circuit. In the first comparative example, the second reset operation is omitted from the operation timing example shown in FIG. FIG. 40 shows a second comparative example of the operation timing applied to the active pixel circuit. This second comparative example shows an example in which the reset operation is performed after the read operation is completed from the upper line to the lower line as compared with the first comparative example of FIG.

  FIG. 41 illustrates a first comparative example of operation timing applied to a passive pixel circuit. In the first comparative example applied to the passive pixel circuit, the second reset operation is omitted from the operation timing example shown in FIG.

(Measurement result of residual voltage at operation timing of comparative example)
When the radiation imaging apparatus is operated at the operation timing of these comparative examples, an afterimage (residual voltage) is generated in the output voltage from each pixel even after the reset operation is performed. 45 to 48 show the results of measuring the residual voltage.

  42 and 44 show the operation timing used for measuring the residual voltage. FIG. 42 shows operation timings for verifying the characteristics of the active pixel circuit. The basic operation timing is the same as that of the comparative example of FIG. 39. However, in order to measure the residual voltage, only the first frame of 10 frames is measured as shown in FIGS. 42 and 44A. ) (Light emission, exposure operation) is performed, and the remaining frames are in a non-light emitting state in which no light irradiation is performed. The reset operation is performed for each frame as shown in FIG. 42 and FIG. 45 to 48 show the measurement results of the active pixel circuit, the same measurement results can be obtained for the passive pixel circuit. FIG. 43 shows operation timings for verifying the characteristics of the passive pixel circuit.

  FIG. 45 shows the result of directly measuring the output voltage of the active pixel circuit. This measurement result is a result of directly measuring the output voltage of the pixel circuit without including the peripheral circuits constituting the radiation imaging apparatus. The vertical axis shows the ratio of the remaining voltage. The horizontal axis indicates the elapsed time corresponding to the number of frames, and the next frame is set as the first frame with reference to the frame irradiated with light. In FIG. 45, measurement was performed by changing the light emission amount (light intensity) of the measurement light source in four stages. The four stages are a case where the light intensity is such that the photoelectric conversion element PD11 is saturated, a case where the light intensity is intermediate, a case where the light intensity is weak, and a case where the light intensity is further weak (weak). Indicates. In this measurement, disturbance due to the influence of noise was measured, but substantially no dependency of the residual voltage due to the difference in light intensity was observed.

  46 shows an output of a single pixel circuit in the second configuration example of the active pixel circuit shown in FIG. 27 (configuration example where the storage node N is on the cathode electrode (n-type semiconductor region) side of the photoelectric conversion element PD11). It is a characteristic view showing the result of having measured the voltage after passing through the amplifier 133. FIG. 47 shows a pixel circuit alone in the first configuration example (configuration example where the storage node N is on the anode electrode (p-type semiconductor region) side of the photoelectric conversion element PD11) of the active pixel circuit shown in FIG. It is a characteristic view which shows the result of having measured the output voltage after passing through the amplifier 133. The measurement results in FIG. 45 are measurement results in a state where the pixel circuit is incorporated in the radiation imaging apparatus, but the measurement results in FIGS. 46 and 47 are not incorporated in the radiation imaging apparatus. ). 46A and 47A simultaneously show the light emission timing of the measurement light source, the application timing of the reset control signal V (Reset), and the output voltage. 46B and 47B are enlarged views of the waveform portion of the output voltage in FIGS. 46A and 47A. 46C and 47C are further enlarged views of the waveform portion of the output voltage in FIGS. 46B and 47B. From the measurement results of FIGS. 46 and 47, after the light irradiation, the reset voltage is temporarily reset to a predetermined reset voltage at the timing when the first reset operation is performed. However, after that, the predetermined reset voltage is not maintained, and the waveform is deteriorated (decay) over a plurality of frames. This tendency occurs regardless of whether the storage node N is on the cathode electrode (n-type semiconductor region) side or the anode electrode (p-type semiconductor region) side of the photoelectric conversion element PD11.

  FIG. 48A shows the result of directly verifying the output voltage of the pixel circuit alone without passing through the amplifier 133 in the second configuration example of the active pixel circuit. FIG. 48B shows the result of directly verifying the output voltage of the pixel circuit alone in the first configuration example of the active pixel circuit without passing through the amplifier 133. In FIGS. 48A and 48B, the vertical axis indicates the ratio of the remaining voltage. The horizontal axis indicates the elapsed time corresponding to the number of frames, and the next frame is set as the first frame with reference to the frame irradiated with light. 48A and 48B are measurement results of a pixel circuit alone (sensor element alone) that is not incorporated in the radiation imaging apparatus, similarly to the measurement results of FIGS. 46 and 47. In FIGS. 48A and 48B, a plurality of measurement results are shown at the same time, which are differences in the manufacturing conditions of the element. From the measurement results of FIGS. 48A and 48B, a relatively large proportion of the residual voltage is observed until after about 2 frames after the light irradiation. This tendency is that the storage node N is on the cathode electrode (n-type semiconductor region) side (FIG. 48A) or the anode electrode (p-type semiconductor region) side (FIG. 48B) of the photoelectric conversion element PD11. It occurs regardless of whether or not.

(Measurement result of residual voltage when reset operation is changed)
The above measurement results show that the light emission timing of light irradiation from the measurement light source (LED) and the reset operation timing (application timing of the reset control signal V (Reset)) are as shown in FIGS. (A), (B)) is performed at the timing shown in FIG. 49C, but as shown in FIG. 49 (C), the reset operation timing (reset interval) is changed. The residual voltage was measured. The result is shown in FIG. The period of one reset operation itself is the same as that in FIG. 49B (4 μsec). In FIG. 50, the horizontal axis indicates the reset interval time in units of H (horizontal scanning) periods in the imaging operation of the radiation imaging apparatus. Here, 1H (horizontal scanning) period = 6 μsec. 50, in the second configuration example of the active pixel circuit shown in FIG. 27 (configuration example when the storage node N is on the cathode electrode (n-type semiconductor region) side of the photoelectric conversion element PD11). The measurement results are shown. As can be seen from the results of FIG. 50, a large change in the residual voltage characteristics does not appear only by changing the reset interval.

  In addition, as shown in FIG. 49D, the residual voltage was measured when the reset operation was performed twice intermittently within one frame period. The result is shown in FIG. The period of one reset operation itself is the same as that in FIG. 49B (4 μsec). In FIG. 51A, the horizontal axis indicates an interval at which two intermittent reset operations are performed in units of H (horizontal scanning) periods in the imaging operation of the radiation imaging apparatus. Here, 1H (horizontal scanning) period = 6 μsec. In FIG. 51A, the second configuration example of the active pixel circuit shown in FIG. 27 and the first configuration example of the active pixel circuit shown in FIG. The measurement results with the configuration example on the anode electrode (p-type semiconductor region) side of the element PD11 are shown simultaneously. As can be seen from the result of FIG. 51A, the residual voltage can be reduced by performing the reset operation twice intermittently. The effect of reducing the residual voltage is obtained by performing the reset operation intermittently over a period exceeding 1H period. In particular, the residual voltage is almost halved by performing the reset operation twice intermittently at intervals of about 10H period (60 μsec).

  In addition, as shown in FIG. 49E, the residual voltage was measured when the continuous reset operation was performed within one frame period (when the reset voltage was applied continuously). The result is shown in FIG. In FIG. 51B, the horizontal axis indicates the time for one continuous reset operation in units of H (horizontal scanning) periods in the imaging operation of the radiation imaging apparatus. Here, 1H (horizontal scanning) period = 6 μsec. FIG. 51B shows measurement results of the second configuration example of the active pixel circuit shown in FIG. 27 and the first configuration example of the active pixel circuit shown in FIG. As can be seen from the result of FIG. 51B, the residual voltage can be reduced by applying the reset voltage continuously. The effect of reducing the residual voltage is obtained by applying the reset voltage continuously over a period exceeding 1H period. In particular, the residual voltage is almost halved by performing the reset operation continuously for a period of about 10H (60 μsec).

  As described above, according to the radiation imaging apparatus according to the present embodiment, the predetermined reset voltage is continuously or intermittently applied to the storage node N over a period exceeding 1H period. Accumulated charges accumulated in N can be reliably reset, and a good detection operation (imaging operation) with little afterimage can be performed.

<Modification of Second Embodiment>
In the second embodiment, an indirect conversion type radiation imaging apparatus in which light after wavelength conversion of radiation by the wavelength converter 140 (FIG. 25) is photoelectrically converted by the pixel unit 112 is given as an example. It may be a direct conversion type radiation imaging apparatus in which radiation is directly converted into electric charges by the pixel unit 112.

  DESCRIPTION OF SYMBOLS 11 ... Application program execution part, 12 ... Display drive circuit, 13 ... Light reception drive circuit, 13A ... Frame memory, 14 ... Image processing part, 15 ... Backlight, 20 ... I / O display panel, 21 ... Display area (sensor area) , 22 ... Display H driver, 23 ... Display V driver, 24 ... Sensor V driver, 25 ... Sensor readout H driver, 31 ... Pixel, 31R, 31G, 31B, 31RGB ... Display pixel, 32 ... Wiring section , 33 ... sensor element (imaging pixel), 41 ... readout line, 51 ... substrate, 52 ... gate electrode, 53 ... gate insulating film, 54 ... PIN type semiconductor layer, 54A ... p type semiconductor region, 54B ... n type semiconductor region 54C ... Intrinsic semiconductor region (i region), 55 ... Anode electrode, 56 ... Cathode electrode, 57 ... Insulating film (flattening film), 8 ... interlayer insulating film, 59 ... gate electrode, 55D ... drain electrode, 56S ... source electrode, 60 ... semiconductor layer, 60A ... drain region, 60B ... source region, 60C ... channel region, 101 ... radiation imaging device, 102 ... photoelectric Conversion device, 111 ... substrate, 112 ... pixel unit, 113 ... row scanning unit, 114 ... horizontal selection unit, 115 ... column scanning unit, 116 ... system control unit, 118 ... vertical signal line (readout line), 119 ... signal line , 120 ... unit pixel, 131 ... constant current source, 133 ... amplifier, 140 ... wavelength converter, 161 ... substrate, 162 ... gate electrode, 163 ... gate insulating film, 164 ... p-type semiconductor layer, 165 ... semiconductor layer, 165a 165b ... LDD, 166 ... first interlayer insulating film, 167 ... wiring layer, 168 ... second interlayer insulating film, 169 ... contact hole, 170 ... i-type half Body layer, 171 ... n-type semiconductor layer, 172 ... upper electrode, 173 ... power supply wiring, 191 ... capacitor, 192 ... charge amplifier, 193 ... switch, 510 ... video display screen section, 511 ... front panel, 512 ... filter glass, 521: Light emitting unit, 522 ... Display unit, 523 ... Menu switch, 524 ... Shutter button, 531 ... Main unit, 532 ... Keyboard, 533 ... Display unit, 541 ... Main unit, 542 ... Lens, 543 ... Start / Stop switch, 544 ... display unit, 710 ... upper casing, 720 ... lower casing, 730 ... connecting section, 740 ... display, 750 ... sub-display, 760 ... picture light, 770 ... camera, 61 ... fingertip, 611 ... drawing line, 62 ... Hand, 621... Object movement (palm tool), 63A, 63B, 6 4,65 ... hand, 641 ... trajectory, 642 ... handprint, 66 ... brush, 661 ... image, Reset ... reset control signal line, Read ... read control signal line, PD1, PD11 ... photoelectric conversion element, Tr1, Tr11 ... for reset Transistor, Tr2, Tr12 ... Amplification transistor, Tr3, Tr13 ... Selection / readout transistor, C0 ... Storage capacitor, P1, N ... Storage node, VDD ... Power supply voltage, Vrst ... Reset voltage, V (Reset) ... Reset control signal , V (Read): read control signal, L0: outside light (environment light), Lon: illumination light by backlight, f: object (finger), ob1: object (pen).

Claims (15)

A plurality of sensor elements arranged two-dimensionally;
Sensor driving means for driving the sensor element,
The sensor element is
A photoelectric conversion element that generates charges according to the amount of received light;
A charge accumulating unit connected to one end of the photoelectric conversion element to accumulate charges converted by the photoelectric conversion element;
Reading means for reading a voltage value or accumulated charge corresponding to the accumulated charge of the charge accumulation unit and outputting it as a sensor detection signal;
Resetting means for resetting accumulated charges accumulated in the charge accumulation unit by applying a predetermined reset voltage to the charge accumulation unit;
The sensor driving means includes
A sensor device that controls the reset means so that the predetermined reset voltage is applied to the charge storage unit continuously or intermittently over a period exceeding one horizontal scanning period. The reset means is a reset transistor;
The reset transistor has a gate terminal to which a reset control signal for controlling on / off of the reset transistor is applied,
The sensor driving means applies a signal having a pulse width exceeding one horizontal scanning period to the gate terminal of the resetting transistor as the reset control signal, so that the predetermined reset voltage exceeds one horizontal scanning period. The sensor device according to claim 1, wherein the storage device is continuously supplied to the storage capacitor. The reset means is a reset transistor;
The reset transistor has a gate terminal to which a reset control signal for controlling on / off of the reset transistor is applied,
The sensor driving means applies two or more intermittent pulse signals as a reset control signal to the gate terminal of the reset transistor within a period exceeding one horizontal scanning period, whereby the predetermined reset voltage is 1 The sensor device according to claim 1, wherein the storage capacitor is intermittently provided over a period exceeding a horizontal scanning period. The photoelectric conversion element includes a non-single crystal semiconductor layer formed on an insulating substrate, and the non-single crystal semiconductor layer includes a p-type semiconductor region, an n-type semiconductor region, the p-type semiconductor region, and the The sensor device according to any one of claims 1 to 3, wherein the sensor device has a PIN structure including an intrinsic semiconductor region formed between the n-type semiconductor region and the n-type semiconductor region. The photoelectric conversion element further includes a gate electrode disposed opposite to the intrinsic semiconductor region via a gate insulating film on the insulating substrate,
The voltage applied to the gate electrode is between a voltage applied to the p-type semiconductor region, a voltage applied to the n-type semiconductor region, or a voltage applied to the p-type semiconductor region and the n-type semiconductor region. Item 5. The sensor device according to Item 4. Each of the reading unit and the sensor driving unit includes a transistor including a semiconductor layer,
The sensor device according to claim 4, wherein a semiconductor layer of each transistor of the reading unit and the sensor driving unit is formed in the same layer as the non-single-crystal semiconductor layer of the photoelectric conversion element on the insulating substrate. A sensor panel in which a plurality of sensor elements are arranged in a matrix in a predetermined sensor area;
A backlight that periodically irradiates illumination light from the back side of the sensor panel toward the sensor panel surface;
A sensor detection signal from the sensor element obtained in a state where illumination light from the backlight is irradiated, and a sensor detection signal from the sensor element obtained in a state where illumination light from the backlight is not irradiated. 4. The sensor device according to claim 1, further comprising: a signal processing unit that detects an object close to the surface of the sensor panel based on a difference between the sensor device and the sensor panel. A photoelectric conversion element that generates charges according to the amount of received light;
A charge accumulating unit connected to one end of the photoelectric conversion element to accumulate charges converted by the photoelectric conversion element;
Reading means for reading a voltage value or accumulated charge corresponding to the accumulated charge of the charge accumulation unit and outputting it as a sensor detection signal;
When driving a plurality of two-dimensionally arranged sensor elements having reset means for resetting accumulated charges accumulated in the charge accumulation unit by applying a predetermined reset voltage to the charge accumulation unit,
A sensor element driving method for controlling the reset means so that the predetermined reset voltage is applied to the charge storage section continuously or intermittently over a period exceeding one horizontal scanning period. A display panel in which a plurality of display pixels and a plurality of sensor elements are two-dimensionally arranged;
Display driving means for driving a plurality of the display pixels;
Sensor driving means for driving the plurality of sensor elements, and
Each of the plurality of sensor elements is
A photoelectric conversion element that generates charges according to the amount of received light;
A charge accumulating unit connected to one end of the photoelectric conversion element to accumulate charges converted by the photoelectric conversion element;
Reading means for reading a voltage value or accumulated charge corresponding to the accumulated charge of the charge accumulation unit and outputting it as a sensor detection signal;
Resetting means for resetting accumulated charges accumulated in the charge accumulation unit by applying a predetermined reset voltage to the charge accumulation unit;
The sensor driving means includes
A display device with an input function for controlling the reset means so that the predetermined reset voltage is applied to the charge storage section continuously or intermittently over a period exceeding one horizontal scanning period. The photoelectric conversion element includes a non-single crystal semiconductor layer formed on an insulating substrate, and the non-single crystal semiconductor layer includes a p-type semiconductor region, an n-type semiconductor region, the p-type semiconductor region, and the a PIN structure comprising an intrinsic semiconductor region formed between the n-type semiconductor region and
The readout unit and the sensor driving unit, and the display pixel and the display driving unit each include a transistor including a semiconductor layer,
A semiconductor layer of each transistor of the reading unit and the sensor driving unit, and the display pixel and the display driving unit is formed on the insulating substrate in the same layer as the non-single-crystal semiconductor layer of the photoelectric conversion element. The display device with an input function according to claim 9. The sensor driving means includes
The display device with an input function according to claim 9, wherein the reset unit is controlled so that the predetermined reset voltage is continuously or intermittently applied to the charge storage unit over a period of 100 μsec or more.   The electronic device provided with the display apparatus with an input function of any one of Claims 9 thru | or 11. A plurality of sensor elements are two-dimensionally arranged, and a pixel portion that generates charges in response to incident radiation or light after wavelength conversion of radiation, and
Sensor driving means for driving the plurality of sensor elements, and
Each of the plurality of sensor elements is
A photoelectric conversion element that generates charges according to the amount of received light;
A charge accumulating unit connected to one end of the photoelectric conversion element to accumulate charges converted by the photoelectric conversion element;
Reading means for reading a voltage value or accumulated charge corresponding to the accumulated charge of the charge accumulation unit and outputting it as a sensor detection signal;
Resetting means for resetting accumulated charges accumulated in the charge accumulation unit by applying a predetermined reset voltage to the charge accumulation unit;
The sensor driving means includes
A radiation imaging apparatus that controls the reset unit so that the predetermined reset voltage is continuously or intermittently applied to the charge storage unit over a period exceeding one horizontal scanning period. The photoelectric conversion element has a PIN structure in which a p-type semiconductor region, an n-type semiconductor region, and an intrinsic semiconductor region formed between the p-type semiconductor region and the n-type semiconductor region are stacked in a vertical direction. The radiation imaging apparatus according to claim 13. Wavelength conversion means for converting incident radiation into light having a longer wavelength than radiation;
The radiation imaging apparatus according to claim 13, wherein the pixel unit generates an electric charge according to light after wavelength conversion by the wavelength conversion unit.

Images