JP2011119223A - 有機発光表示装置 - Google Patents
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- JP2011119223A JP2011119223A JP2010182492A JP2010182492A JP2011119223A JP 2011119223 A JP2011119223 A JP 2011119223A JP 2010182492 A JP2010182492 A JP 2010182492A JP 2010182492 A JP2010182492 A JP 2010182492A JP 2011119223 A JP2011119223 A JP 2011119223A
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- 239000000758 substrate Substances 0.000 claims abstract description 42
- 230000000903 blocking effect Effects 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 18
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000395 magnesium oxide Substances 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 122
- 239000010409 thin film Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 16
- 238000003860 storage Methods 0.000 description 16
- 239000004840 adhesive resin Substances 0.000 description 4
- 229920006223 adhesive resin Polymers 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 3
- 239000012788 optical film Substances 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/872—Containers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】本発明に係る有機発光表示装置は、第1基板100と、前記第1基板100上に位置する第1電極710と、前記第1電極710上に位置する有機発光層720と、前記有機発光層720上に位置する第2電極730と、前記有機発光層720を覆うように前記第2電極730上に位置して、外部から前記有機発光層720に照射される紫外線を遮断する紫外線遮断物質を含むキャッピング層500と、を備える。
【選択図】図3
Description
100 第1基板
101、102 有機発光表示装置
200 第2基板
300 配線部
400 有機発光素子
500 キャッピング層
502 キャッピング層
512 ベース層
522 紫外線遮断層
710 第1電極
720 有機発光層
730 第2電極
Claims (8)
- 第1基板と、
前記第1基板上に位置する第1電極と、
前記第1電極上に位置する有機発光層と、
前記有機発光層上に位置する第2電極と、
前記有機発光層を覆うように前記第2電極上に位置して、外部から前記有機発光層に照射される紫外線を遮断する紫外線遮断物質を含むキャッピング層と、
を備える、有機発光表示装置。 - 前記紫外線遮断物質は、亜鉛酸化物、チタニウム酸化物、鉄酸化物、またはマグネシウム酸化物のうちの一つ以上を含む、請求項1に記載の有機発光表示装置。
- 前記キャッピング層は、非晶質状態の有機膜または非晶質状態の無機膜である、請求項2に記載の有機発光表示装置。
- 前記キャッピング層は、a−NPD、NPB、TPD、m−MTDATA、Alq3、LiF、またはCuPcのうちの一つ以上を含む有機膜である、請求項3に記載の有機発光表示装置。
- 前記キャッピング層は、ケイ素(Si)を含む無機膜である、請求項3に記載の有機発光表示装置。
- 前記キャッピング層は、原子または分子単位で蒸着される、請求項3に記載の有機発光表示装置。
- 前記キャッピング層は、前記紫外線遮断物質を含む紫外線遮断層を少なくとも含む2以上の層からなる、請求項2に記載の有機発光表示装置。
- 前記紫外線遮断層は、前記第2電極と離隔して位置する、請求項7に記載の有機発光表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090117927A KR101244706B1 (ko) | 2009-12-01 | 2009-12-01 | 유기 발광 표시 장치 |
KR10-2009-0117927 | 2009-12-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011119223A true JP2011119223A (ja) | 2011-06-16 |
Family
ID=44068161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010182492A Pending JP2011119223A (ja) | 2009-12-01 | 2010-08-17 | 有機発光表示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9224978B2 (ja) |
JP (1) | JP2011119223A (ja) |
KR (1) | KR101244706B1 (ja) |
Cited By (6)
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WO2012140863A1 (ja) * | 2011-04-13 | 2012-10-18 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
JP2015023023A (ja) * | 2013-07-22 | 2015-02-02 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 有機発光表示装置及びその製造方法 |
JP2017198991A (ja) * | 2016-04-29 | 2017-11-02 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 表示装置 |
JP2022553853A (ja) * | 2019-11-06 | 2022-12-26 | アプライド マテリアルズ インコーポレイテッド | Uv硬化フィラーを有する有機発光ダイオード(oled)ディスプレイデバイス |
WO2023021371A1 (ja) * | 2021-08-20 | 2023-02-23 | 株式会社半導体エネルギー研究所 | 保護層用有機金属化合物、保護層、有機半導体層の加工方法、および有機半導体デバイスの作製方法 |
US11974457B2 (en) | 2020-01-22 | 2024-04-30 | Applied Materials, Inc. | Light-emitting diode display devices with mirror |
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KR101244706B1 (ko) | 2013-03-18 |
US20110127498A1 (en) | 2011-06-02 |
KR20110061317A (ko) | 2011-06-09 |
US9224978B2 (en) | 2015-12-29 |
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