JP2011119028A - Thin-film magnetic material storage device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin-film magnetic material storage device that efficiently and stably writes data. <P>SOLUTION: A data write current for applying a data write magnetic field along an axis of hard magnetization to a selected memory cell is supplied to a write word line WWWLi corresponding to a selected row. A data write current for applying a data write magnetic field along an axis of easy magnetization to the selected memory cell is supplied to bit lines BLj and /BLj corresponding to a selected column. During data write, supply of the data write current of the write word line WWWLi is started earlier than that of the bit lines BLj and /BLj. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a thin film magnetic memory device, and more particularly to a randomly accessible thin film magnetic memory device including a memory cell having a magnetic tunnel junction (MTJ).

  An MRAM (Magnetic Random Access Memory) device has attracted attention as a storage device that can store nonvolatile data with low power consumption. An MRAM device is a storage device that performs non-volatile data storage using a plurality of thin film magnetic bodies formed in a semiconductor integrated circuit and allows random access to each of the thin film magnetic bodies.

  In particular, in recent years, it has been announced that the performance of an MRAM device is dramatically improved by using a tunnel magnetoresistive element using a magnetic tunnel junction (MTJ) as a memory cell. For MRAM devices with memory cells with magnetic tunnel junctions, see “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, ISSCC Digest of Technical Papers, TA7.2, Feb 2000. and “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, ISSCC Digest of Technical Papers, TA7.3, Feb. 2000.

  FIG. 39 is a schematic diagram showing the configuration of a memory cell having a magnetic tunnel junction (hereinafter also simply referred to as “MTJ memory cell”).

  Referring to FIG. 39, the MTJ memory cell includes a magnetic tunnel junction MTJ whose electrical resistance value changes according to the data level of stored data, and an access transistor ATR. Access transistor ATR is formed of a field effect transistor, and is connected in series with magnetic tunnel junction MTJ between bit line BL and ground voltage VSS.

  For MTJ memory cells, write word line WWL for instructing data writing, read word line RWL for instructing data reading, and the level of stored data at the time of data reading and data writing A bit line BL which is a data line for transmitting the electrical signal is disposed.

FIG. 40 is a conceptual diagram illustrating a data read operation from the MTJ memory cell.
Referring to FIG. 40, magnetic tunnel junction MTJ includes a magnetic layer (hereinafter, also simply referred to as “fixed magnetic layer”) FL having a fixed magnetization direction and a magnetic layer having a free magnetization direction ( (Hereinafter also simply referred to as “free magnetic layer”) VL. A tunnel barrier TB formed of an insulator film is disposed between the fixed magnetic layer FL and the free magnetic layer VL. The free magnetic layer VL is magnetized in a direction corresponding to the level of stored data, that is, either in the same direction as the fixed magnetic layer FL or in a different direction.

  At the time of data reading, access transistor ATR is turned on in response to activation of read word line RWL. As a result, a sense current Is supplied as a constant current from a control circuit (not shown) flows through a current path from the bit line BL to the magnetic tunnel junction MTJ to the ground voltage VSS.

  The electric resistance value of the magnetic tunnel junction MTJ changes according to the relative relationship of the magnetization direction between the fixed magnetic layer FL and the free magnetic layer VL. Specifically, when the magnetization direction of the pinned magnetic layer FL is the same as the magnetization direction written in the free magnetic layer VL, the electric current of the magnetic tunnel junction MTJ is compared to the case where the magnetization directions of the two are different. The resistance value becomes smaller.

  Therefore, at the time of data reading, the voltage change caused at the magnetic tunnel junction MTJ by the sense current Is differs according to the magnetic field direction stored in the free magnetic layer VL. Thus, for example, if the supply of the sense current Is is started after the bit line BL is once precharged to a high voltage, the level of data stored in the MTJ memory cell is detected by detecting the voltage level change of the bit line BL. Can be read.

FIG. 41 is a conceptual diagram illustrating a data write operation for the MTJ memory cell.
Referring to FIG. 41, at the time of data writing, read word line RWL is inactivated, and in response, access transistor ATR is turned off. In this state, a data write current for generating a data write magnetic field for magnetizing free magnetic layer VL in the direction corresponding to the stored data level is supplied to write word line WWL and bit line BL. The magnetization direction of free magnetic layer VL is determined by a combination of directions of data write currents flowing through write word line WWL and bit line BL, respectively.

  FIG. 42 is a conceptual diagram illustrating the relationship between the direction of data write current and the direction of data write magnetic field during data write.

  Referring to FIG. 42, magnetic field Hx indicated by the horizontal axis indicates the direction of data write magnetic field H (WWL) generated by the data write current flowing through write word line WWL. On the other hand, the magnetic field Hy indicated on the vertical axis indicates the direction of the data write magnetic field H (BL) generated by the data write current flowing through the bit line BL.

  The magnetization direction of free magnetic layer VL is newly written only when the sum of data write magnetic fields H (WWL) and H (BL) reaches a region outside the asteroid characteristic line shown in the figure. . That is, when the data write magnetic field corresponding to the area inside the asteroid characteristic line is applied, the magnetization direction of the free magnetic layer VL is not updated.

  Therefore, in order to write storage data to the MTJ memory cell, it is necessary to pass a data write current to both the write word line WWL and the bit line BL. The magnetization direction once stored in the magnetic tunnel junction MTJ, that is, the stored data level is held in a nonvolatile manner until new data writing is executed.

  Even during the data read operation, sense current Is flows through bit line BL. However, since the sense current Is is generally set to be about 1 to 2 digits smaller than the data write current described above, the stored data in the MTJ memory cell is erroneously read at the time of data reading due to the influence of the sense current Is. The possibility of rewriting is small.

  The above-described technical literature discloses a technique for constructing an MRAM device that is a random access memory by integrating such MTJ memory cells on a semiconductor substrate.

FIG. 43 is a conceptual diagram showing MTJ memory cells integrated and arranged in a matrix.
Referring to FIG. 43, a highly integrated MRAM device can be realized by arranging MTJ memory cells in a matrix on a semiconductor substrate. FIG. 43 shows a case where MTJ memory cells are arranged in n rows × m columns (n, m: natural numbers). For n × m MTJ memory cells arranged in a matrix, n write word lines WWL1 to WWLn and read word lines RWL1 to RWLn and m bit lines BL1 to BLm are arranged.

  At the time of data reading, one of read word lines RWL1 to RWLn is selectively activated, and a memory cell belonging to a selected memory cell row (hereinafter also simply referred to as “selected row”) is connected to bit line BL1. Are electrically coupled between each of .about.BLm and ground voltage VSS. As a result, a voltage change according to the storage data level of the corresponding memory cell occurs in each of the bit lines BL1 to BLm.

  Therefore, by comparing the voltage of the bit line corresponding to the selected memory cell column (hereinafter also simply referred to as “selected column”) with a predetermined reference voltage using a sense amplifier or the like, The stored data level can be read.

Roy Scheuerlein and 6 others, “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Using FET Switches and Magnetic Tunnel Junctions in Each Cell Junction and FET Switch in each Cell), (USA), 2000 IEICE International Solid Circuit Conference and Technical Papers TA7.2 (2000 IEEE ISSCC Digest of Technical Papers, TA7.2), p. 128-129 D. Durlam and five others, “Nonvolatile RAM based on Magnetic Tunnel Junction Elements” (USA), 2000 International Solid State Circuit Conference / Technology of the Institute of Electrical and Electronics Engineers, 2000 Proceedings TA7.3 (2000 IEEE ISSCC Digest of Technical Papers, TA7.3), p. 130-131

  However, in such a data read operation, the path of the sense current Is is formed in all the memory cells belonging to the selected row, so that the non-selected memory cell column (hereinafter also simply referred to as “non-selected column”). Even in the bit lines corresponding to the columns, useless charging / discharging currents that do not directly contribute to data reading occur. As a result, power consumption during data reading increases.

  Further, as described in the technical literature described above, when the bias voltage applied to both ends of the magnetic tunnel junction is increased, the relative relationship of the magnetization direction between the fixed magnetic layer FL and the free magnetic layer VL, that is, memory Changes in the electrical resistance value according to the data level are less likely to appear. Therefore, when the voltage applied to both ends of the magnetic memory cell is increased during data reading, the difference in the voltage change of the bit line corresponding to the stored data level does not appear remarkably, and the high-speed and stable data reading operation is achieved. Sex may be impaired.

  A dummy memory cell is generally used to generate a reference voltage for comparison with the voltage of the bit line coupled to the selected memory cell. As dummy cells used for data reading of the MTJ memory cell, for example, in the MTJ memory cell, electric resistance values R1 and R0 respectively corresponding when “1 (H level)” and “0 (L level)” data are stored are stored. A resistance element having an electrical resistance value Rd corresponding to an intermediate value of can be applied. By supplying the same sense current Is as that of the MTJ memory cell to such a resistance element, the reference voltage can be generated.

  Generally, dummy memory cells are arranged so as to form a dummy row or a dummy column.

  When dummy cells are arranged so as to form a dummy row, data reading based on a so-called folded bit line configuration can be executed by a pair of bit lines formed by two adjacent bit lines. is there. In such a configuration, the selected MTJ memory cell and dummy memory cell can be coupled to each of two adjacent bit lines. For this reason, the RC time constant between each of the selected MTJ memory cell and dummy memory cell and the sense amplifier can be made uniform to ensure a data read margin.

  However, since it is necessary to flow a sense current also to the dummy memory cells corresponding to the non-selected memory cell columns, the power consumption during data reading increases.

  On the other hand, when the dummy cells are arranged so as to form a dummy column, it is not necessary to supply a sense current to the plurality of dummy memory cells, while the bit line to which the selected MTJ memory cell is coupled, The dummy bit lines provided corresponding to the columns and coupled to the dummy memory cells cannot always be arranged close to each other. As a result, a difference in RC time constant between each selected MTJ memory cell and dummy memory cell and the sense amplifier may impair the data read margin or reduce the data read speed.

  On the other hand, as already described, data writing to the MTJ memory cell is executed by a combination of data write magnetic fields generated by data write currents flowing through write word line WWL and bit line BL, respectively. Therefore, it is necessary to supply the data write current so that the free magnetic layer VL in the magnetic tunnel junction MTJ is effectively and stably magnetized.

  In addition, since the data write magnetic field applied to the selected MTJ memory cell acts as magnetic field noise for other adjacent MTJ memory cells, erroneous data writing is performed in memory cells other than the data write target. Care must be taken not to occur. In particular, if the data write current required for generating a predetermined magnetic field required for data writing can be reduced, it is possible to improve both the power consumption and the operation stabilization by suppressing magnetic noise.

  The present invention has been made to solve such problems, and an object of the present invention is to provide a thin film magnetic memory device capable of performing high-speed data reading with low power consumption. .

  Another object of the present invention is to provide a thin film magnetic memory device capable of performing efficient and stable data writing.

  The thin film magnetic memory device according to claim 1 is provided with a plurality of memory cells whose electric resistance values change according to a stored data level written by an applied magnetic field, and each of the memory cells is provided for each predetermined section of the plurality of memory cells. And a plurality of first data lines for reading a stored data level at the time of data reading and a plurality of first data lines corresponding to the plurality of first data lines, each of which belongs to a certain section at the time of data reading. A plurality of source lines electrically coupled to a corresponding one of the plurality of first data lines via a selected one of the cells and a plurality of first data lines; And a plurality of first data line selection units arranged respectively, and a plurality of source line selection units arranged corresponding to the plurality of source lines. The first data line selection unit precharges the corresponding one of the plurality of first data lines to the first voltage before the data reading, and at the time of data reading the corresponding one data line The first data line is electrically disconnected from the first voltage. Each source line selection unit corresponds to a source line precharge unit for precharging a corresponding one of a plurality of source lines to a second voltage before data reading, and a corresponding one at the time of data reading. And a source line driver for electrically coupling the source line to the third voltage.

  The thin film magnetic memory device according to claim 2 is the thin film magnetic memory device according to claim 1, wherein the first and second voltages are the same voltage.

  The thin film magnetic memory device according to claim 3 is the thin film magnetic memory device according to claim 2, wherein the same voltage corresponds to the ground voltage.

  The thin film magnetic memory device according to claim 4 is the thin film magnetic memory device according to claim 1, wherein each memory cell is subjected to a difference in stored data level as the voltage applied to both ends thereof increases. Therefore, the first and second voltages are the same voltage, and each source line driver has a corresponding one source line and a third voltage. Is provided with a first current switch section for adjusting a voltage change speed at the time of data reading in a corresponding one source line.

  The thin film magnetic memory device according to claim 5 is the thin film magnetic memory device according to claim 4, wherein each source line precharge unit is provided between the corresponding one source line and the second voltage. It has the 2nd current switch part electrically connected, and the amount of passage currents of the 1st current switch part is smaller than the amount of passage currents of the 2nd current switch part.

  The thin film magnetic memory device according to claim 6 is the thin film magnetic memory device according to claim 1, wherein the plurality of memory cells are arranged in a matrix, and the plurality of first data lines are arranged in the memory cell column. Each of the first data line selection units is provided corresponding to each of the first data lines corresponding to the first voltage and the electrical voltage when the corresponding memory cell column is selected as a data read target. The remaining first data lines corresponding to the non-selected memory cell columns are maintained at the first voltage.

  The thin-film magnetic memory device according to claim 7 is the thin-film magnetic memory device according to claim 6, and is arranged corresponding to each memory cell column, and each selects and deselects the corresponding memory cell column. A plurality of column selection lines that are activated or deactivated correspondingly are further provided. The first data line selection unit is electrically coupled between one corresponding first data line and the first voltage to activate and deactivate one corresponding column selection line. Each has a transistor switch that is turned off and on in response.

  The thin film magnetic memory device according to claim 8 is the thin film magnetic memory device according to claim 1, wherein the plurality of memory cells are arranged in a matrix, and the plurality of source lines correspond to the memory cell columns, respectively. Provided. When the corresponding memory cell column is selected as a data read target, the source line driving unit electrically couples the corresponding one source line with the third voltage and corresponds to the non-selected memory cell column. The remaining source lines are maintained at the second voltage.

  The thin film magnetic memory device according to claim 9 is the thin film magnetic memory device according to claim 8, which is arranged corresponding to each of the memory cell columns, and each selects and deselects the corresponding memory cell column. A plurality of column selection lines that are respectively activated and deactivated are further provided. The source line driver is electrically coupled between the corresponding one source line and the third voltage to activate and deactivate corresponding one of the plurality of column selection lines. A first transistor switch that is turned on and off in response, and the source line precharge portion is electrically coupled between the corresponding one source line and the second voltage, The second transistor switch is turned off and on in response to activation and deactivation of the column selection line.

  The thin film magnetic memory device according to claim 10 is the thin film magnetic memory device according to claim 1, for comparing with a voltage of one of the plurality of first data lines at the time of data reading. A second data line to which a reference voltage is transmitted, a data read circuit for detecting and amplifying a voltage difference between the first and second data lines, and an electric resistance value of each memory cell corresponding to each stored data level Dummy memory cell having an intermediate electric resistance value and a dummy data cell arranged corresponding to the second data line and electrically coupled to the second data line via the dummy memory cell at the time of data reading A source line; a second data line selection unit corresponding to the second data line; and a dummy source line selection unit corresponding to the dummy source line. The second data line selection unit precharges the second data line to the first voltage before data reading, and electrically disconnects the second data line from the first voltage during data reading. Release. The dummy source line selection unit includes a dummy source line precharge unit for precharging the dummy source line to the second voltage before data reading, and the dummy source line is electrically connected to the third voltage during data reading. And a dummy source line driver for coupling them.

  The thin film magnetic memory device according to claim 11 is the thin film magnetic memory device according to claim 10, wherein the memory is formed between the data read circuit and the third voltage and is selected as a data read target. The electric resistance value of the first data line in the first current path including the cell is the same as the electric resistance value of the second data line in the second current path including the dummy memory cell. The electrical resistance values per unit length of the plurality of first data lines and second data lines are designed.

The thin film magnetic memory device according to claim 12 is the thin film magnetic memory device according to claim 10, wherein a plurality of second data lines are arranged corresponding to each of the plurality of first data lines. Each of the dummy source lines corresponding to each of the plurality of second data lines is provided so as to share a common wiring with each of the plurality of source lines, and the dummy source line selection unit corresponding to each of the dummy source lines includes:
Each source selection unit is provided in common.

  The thin-film magnetic memory device according to claim 13 includes a memory cell for executing data storage, and a first signal line for flowing a first data write current for generating a first data write magnetic field. And a second signal line for supplying a second data write current for generating a second data write magnetic field. The memory cell includes a magnetic storage unit whose electrical resistance value changes according to the level of stored data. The magnetic storage unit includes a first magnetic layer that holds a fixed predetermined magnetization direction, a first data write magnetic field for applying a magnetic field along the hard axis direction, and an easy axis direction And a second magnetic layer that retains the magnetization direction written in accordance with the combination of the second data write magnetic fields for applying the magnetic field along. At the time of data writing, the supply of the first data write current is started before the supply of the second data write current.

  The thin film magnetic memory device according to claim 14 is the thin film magnetic memory device according to claim 13, wherein the second signal line supplies a data read current for passing through the magnetic memory portion during data read. In the second signal line, the time when the data read current starts to flow from the start of the data read operation is shorter than the time from the start of the data write operation to when the second data write current starts to flow.

  The thin-film magnetic memory device according to claim 15 is the thin-film magnetic memory device according to claim 13, and is electrically coupled to the second signal line via the memory cell at the time of data reading. , A first signal line selector for controlling the voltage of the second signal line, and a second signal line selector for controlling the voltage of the third signal line. The first signal line selection unit precharges the second signal line to the first voltage before data reading, and electrically connects the second signal line from the first voltage during data reading. Separate. The second signal line selection unit includes a precharge unit for precharging the third signal line to the second voltage before data reading, and a third signal line for the third signal line during data reading. And a signal line driver for electrically coupling to the voltage.

  The thin film magnetic memory device according to claim 16 is arranged corresponding to each of a plurality of memory cells arranged in a matrix and a row of the plurality of memory cells, and selectively activated at the time of data writing. A plurality of write word lines through which a first data write current for generating a first data write magnetic field flows, and a plurality of bit lines arranged corresponding to columns of a plurality of memory cells, respectively A plurality of source lines arranged corresponding to the columns, each of which is arranged so as to sandwich a memory cell belonging to the corresponding column between a corresponding one of the plurality of bit lines, and the column And a plurality of coupling switches for electrically coupling one end sides of each of the source lines and bit lines corresponding to the column selection result at the time of data writing. When writing data And a data write circuit for supplying a second data write current for generating a second data write magnetic field. Each of the plurality of memory cells includes a magnetic storage unit whose electrical resistance value changes according to the stored data level written by the combination of the first and second data write magnetic fields. The data write circuit couples each one of the source line and the other end of the bit line corresponding to the column selection result to one of the first and second voltages according to the level of the stored data.

  The thin-film magnetic memory device according to claim 17 is the thin-film magnetic memory device according to claim 16, wherein, at the time of data reading, one source line and one bit line at the other end corresponding to the column selection result Are electrically coupled to the first and second voltages, respectively, and further includes a data read circuit for performing data read based on a voltage change of the bit line corresponding to the column selection result. Each memory cell further includes an access portion which is selectively turned on at the time of data reading and electrically couples the magnetic memory portion between corresponding ones of the plurality of bit lines and source lines. . The plurality of coupling switches electrically disconnect one end side of each source line and bit line corresponding to the column selection result at the time of data reading.

  The thin film magnetic memory device according to claim 18 is arranged corresponding to each of a plurality of memory cells arranged in a matrix and a row of the plurality of memory cells, and the first data write magnetic field at the time of data writing A plurality of write word lines that are selectively activated to flow a first data write current for generating a voltage and a row are arranged corresponding to the rows, respectively, and one end side of each is coupled to the first voltage According to the column selection result, supply of the second data write current is arranged corresponding to each of the plurality of source lines and the columns of the plurality of memory cells and generates the second data write magnetic field at the time of data writing. A plurality of bit lines selectively received and a word line driver for coupling one activated end of the plurality of write word lines to the second voltage at the time of data writing. Prepare. Each of the plurality of memory cells includes a magnetic storage unit whose electrical resistance value changes according to the stored data level written by the combination of the first and second data write magnetic fields. The first data write current is generated by the activated write word line and at least one of the plurality of source lines electrically coupled to the activated write word line and the other end side. It flows through the configured current path.

  The thin-film magnetic memory device according to claim 19 is the thin-film magnetic memory device according to claim 18, wherein the other end of each one corresponding to the same row of the plurality of write word lines and source lines. The sides are electrically coupled. Each write word and each source line are arranged so that the directions of the magnetic fields generated in the magnetic memory sections by the first data write current flowing through each write word line and each source line are aligned.

  The thin film magnetic memory device according to claim 20 is the thin film magnetic memory device according to claim 19, wherein each write word line and each source line are arranged so as to sandwich the magnetic memory portion in the height direction. The

  The thin film magnetic memory device according to claim 21 is the thin film magnetic memory device according to claim 18, and is disposed between each write word line and a plurality of source lines belonging to another row. A plurality of coupling switches are further provided. At the time of data writing, at least one coupling switch corresponding to the activated write word line is turned on.

The thin film magnetic memory device according to claim 22 is arranged corresponding to each of a plurality of memory cells arranged in a matrix and a row of the plurality of memory cells, and an access unit according to a row selection result at the time of data reading Are selectively activated to flow a first data write current that is arranged corresponding to each of a plurality of read word lines and rows for turning on and generates a first data write magnetic field at the time of data writing A plurality of write word lines and a plurality of bit lines arranged corresponding to the columns of the plurality of memory cells, each of which is electrically coupled to the plurality of write word lines via the memory cells, In order to cause the first data write current to flow, one end of one of the plurality of write word lines activated is coupled to the first voltage and the remaining write word lines are connected to the second voltage Word line dry to set voltage And any one of the two combined write word lines is activated between each write word line and each of the plurality of write word lines belonging to other rows. A coupling switch that is turned on, and at the time of data reading, a data read current is supplied to one of the plurality of bit lines corresponding to the column selection result, and one bit line of the bit selection And a data read circuit for executing data read based on the voltage change. Each of the plurality of memory cells is coupled in series with a magnetic storage unit whose electrical resistance value changes according to the stored data level written by the combination of the first and second data write magnetic fields, and the magnetic storage unit And an access portion selectively turned on at the time of data reading to pass a data read current and turned off at the time of data writing. The word line driver sets each write word line to the read reference voltage during data reading.

  The thin film magnetic memory device according to claim 23 is provided corresponding to each of a plurality of memory cells arranged in a matrix and a column of the plurality of memory cells, and selectively supplies a data read current at the time of data reading. And a plurality of data lines received in response to the columns, and selectively activated according to the column selection result at the time of data reading, and compared with a corresponding one of the plurality of data lines. And a reference voltage generator that generates a reference voltage. Each of the plurality of memory cells includes a magnetic storage unit whose electrical resistance value changes according to the stored stored data level, and an access unit for selectively turning on and passing a data read current during data reading including. Each memory cell is coupled between a corresponding one of a plurality of data lines and a predetermined voltage.

  The thin film magnetic memory device according to claim 24 is the thin film magnetic memory device according to claim 23, wherein the thin film magnetic memory device is provided corresponding to each column, and the corresponding column is selected as a data read target at the time of data reading. In some cases, a dummy data line for receiving a data read current is further provided. The reference voltage generation unit is connected in series with a dummy resistor having an intermediate electric resistance value corresponding to each of the storage data levels of each memory cell and a corresponding one of the data lines and a predetermined voltage. A dummy memory cell having a dummy access portion that is electrically coupled and turned on when a corresponding column is selected, and for turning on the dummy access portion when the corresponding column is selected as a data read target And a dummy selection unit.

  The thin film magnetic memory device according to claim 25 is the thin film magnetic memory device according to claim 24, wherein two reference voltage generating sections are arranged for each column. Each data line and dummy data line are configured using two signal lines provided corresponding to each of the columns, and one and the other of the two signal lines are stored in memory according to the row selection result. It is electrically coupled to either the cell or the dummy memory cell.

  The thin-film magnetic memory device according to claim 26 is the thin-film magnetic memory device according to claim 23, wherein the thin-film magnetic memory device is arranged corresponding to the plurality of data lines, and each of them is in the same column during data reading. A plurality of source lines electrically coupled to a corresponding one of the plurality of data lines through a selected one of the memory cells belonging to the memory cells, and corresponding to the plurality of data lines, respectively. A plurality of data line selection units, and a plurality of source line selection units respectively arranged corresponding to the plurality of source lines. Each data line selection unit precharges a corresponding one of a plurality of data lines to a first voltage before data reading, and sets the corresponding one data line to the first voltage during data reading. Electrically disconnected from the voltage. Each source line selection gate has a source line precharge portion for precharging a corresponding one of the plurality of source lines to the second voltage before data reading, and a corresponding 1 at the time of data reading. And a source line driver for electrically coupling the source line to a predetermined voltage.

  In the thin film magnetic memory device according to the first and second aspects, the voltage of each source line can be changed between precharge and data read. Therefore, it is possible to avoid unnecessary charging / discharging current from flowing through the first data line not directly related to data reading, and to reduce the power consumption of the data reading operation.

  Since the thin film magnetic memory device according to claim 3 does not require a charging current when precharging the bit line and the source line, in addition to the effect of the thin film magnetic memory device according to claim 2, power consumption Can be further reduced.

  The thin film magnetic memory device according to claims 4 and 5 can suppress the voltage applied to both ends of the memory cell to be read at the time of data reading, so that it corresponds to the difference in the stored data level in the first data line. The difference in voltage change can be remarkably generated. As a result, in addition to the effect exhibited by the thin film magnetic memory device according to the first aspect, a data read margin can be further secured.

  In the thin film magnetic memory device according to the sixth to ninth aspects, the voltage of the bit line or the source line can be changed between precharge and data read according to the column selection result. Therefore, unnecessary charge / discharge current can be prevented from flowing through the bit line corresponding to the non-selected column, and the power consumption of the data read operation can be reduced.

  The thin film magnetic memory device according to claim 10 and 11 reads out data based on a voltage difference between a first data line coupled with a selected memory cell and a second data line coupled with a dummy memory cell. Since this is executed, in addition to the effect exhibited by the thin film magnetic memory device according to the first aspect, a data read margin can be further secured.

  The thin film magnetic memory device according to the twelfth aspect can efficiently arrange the dummy memory cells and the related circuits in addition to the effect exhibited by the thin film magnetic memory device according to the tenth aspect.

  The thin film magnetic memory device according to claim 13 generates a magnetic field along the easy magnetization axis direction after generating a magnetic field along the hard magnetization axis direction in the data writing operation to the magnetic storage unit. Data writing can be stably executed in consideration of the magnetic characteristics of the cell.

  The thin-film magnetic memory device according to the fourteenth aspect can perform high-speed data reading in addition to the effect of the thirteenth aspect.

  In the thin film magnetic memory device according to claim 15, since the voltage of the third signal line can be changed between precharge and data read, a non-selected memory not directly related to data read It is possible to avoid an unnecessary charge / discharge current from flowing through the second data line corresponding to the cell. Therefore, in addition to the effect exhibited by the thin film magnetic memory device according to the thirteenth aspect, the data read operation can be reduced in power consumption.

  17. The thin film magnetic memory device according to claim 16, wherein a magnetic field strengthening in a selected memory cell generated by currents flowing through a bit line and a source line corresponding to a column selection result is used as a second data write magnetic field. Execute. Therefore, since the second data write current can be reduced, it is possible to reduce the power consumption during data writing, improve the reliability by reducing the bit line current density, and suppress the magnetic field noise on the adjacent cells. it can.

  The thin film magnetic memory device according to claim 17 can execute data reading in addition to the effect exhibited by the thin film magnetic memory device according to claim 16.

  The thin film magnetic memory device according to any one of claims 18 to 21 can form the return path of the first data write current flowing through the write word line corresponding to the row selection result by using one source line. Therefore, data writing is executed using a magnetic field strengthened in the selected memory cell generated by currents flowing through the write word line and the source line as the first data write magnetic field. Therefore, since the first data write current can be reduced, it is possible to reduce power consumption at the time of data writing, to improve reliability by lowering the bit line current density, and to suppress magnetic field noise to adjacent cells. it can.

  23. The thin film magnetic memory device according to claim 22, wherein in the array configuration in which the arrangement of the source lines is omitted, the return path of the first data write current flowing through the write word line corresponding to the row selection result is set to another row. It can be formed using a plurality of source lines to which it belongs. Therefore, data writing is performed by using the magnetic field strengthening in the selected memory cell, which is generated by the current flowing through the write word line corresponding to the selected row and the plurality of write word lines corresponding to the non-selected row, as the first data writing magnetic field Can be executed. As a result, the first data write current can be reduced, thereby reducing power consumption during data write, improving reliability by reducing the bit line current density, and suppressing magnetic field noise on adjacent cells. Can do.

  In the thin film magnetic memory device according to the twenty-third and twenty-fourth aspects, the data can be read while the reference voltage generation unit corresponding to the non-selected column is deactivated. As a result, it is possible to execute data reading with a large signal margin while suppressing power consumption in the reference voltage generator.

  The thin film magnetic memory device according to claim 25 is capable of executing data reading using two signal lines arranged in a folded configuration for each memory cell column. In addition to the effects exhibited by the thin film magnetic memory device, stable data reading with high electrical noise resistance can be performed.

  27. The thin film magnetic memory device according to claim 26, which can change the voltage of the source line between precharge and data read, and therefore corresponds to a non-selected memory cell not directly related to data read. It is possible to avoid unnecessary charge / discharge current from flowing through the bit line. Therefore, in addition to the effect exhibited by the thin film magnetic memory device according to the twenty-third aspect, the data reading operation can be reduced in power consumption.

1 is a schematic block diagram showing an overall configuration of an MRAM device 1 according to an embodiment of the present invention. 1 is a conceptual diagram showing a configuration according to a first embodiment of a memory array 10 and its peripheral circuits. FIG. 3 is a circuit diagram showing a configuration of a data reading circuit shown in FIG. 2. 6 is a timing chart illustrating a data read operation according to the first embodiment. It is a conceptual diagram which shows the structure according to the modification 1 of Embodiment 1 of the memory array 10 and its peripheral circuit. FIG. 6 is a circuit diagram showing a configuration of a data read circuit shown in FIG. 5. 11 is a timing chart illustrating a data read operation according to the first modification of the first embodiment. It is a conceptual diagram which shows the structure according to the modification 2 of Embodiment 1 of the memory array 10 and its peripheral circuit. FIG. 9 is a circuit diagram showing a configuration of a data reading circuit shown in FIG. 8. 11 is a timing chart illustrating a data read operation according to the second modification of the first embodiment. It is a conceptual diagram which shows the structure according to the modification 3 of Embodiment 1 of the memory array 10 and its peripheral circuit. 12 is a timing chart illustrating a data read operation according to the third modification of the first embodiment. It is a conceptual diagram which shows the structure according to the modification 4 of Embodiment 1 of the memory array 10 and its peripheral circuit. 11 is a timing chart illustrating a data read operation according to the fourth modification of the first embodiment. It is a conceptual diagram which shows the structure according to Embodiment 2 of the memory array 10 and its peripheral circuit. FIG. 16 is a circuit diagram showing a configuration of a data write circuit shown in FIG. 15. It is a circuit diagram which shows the structure of a column selection clock generation circuit. It is a timing chart explaining the phase change of a column selection clock. 11 is a timing chart for explaining data reading and data writing operations according to the second embodiment. It is sectional drawing which shows the structure of the tunnel magnetoresistive element in a memory cell. It is a conceptual diagram which shows the magnetization direction in the free magnetic layer in a tunnel magnetoresistive element. It is a hysteresis curve for demonstrating the magnetization characteristic in a magnetization easy axis area | region. It is a hysteresis curve for demonstrating the magnetization characteristic in a magnetization difficult axis area | region. It is a conceptual diagram explaining the magnetization of the free magnetic layer at the time of data writing. It is a conceptual diagram which shows the structure according to Embodiment 3 of the memory array 10 and its peripheral circuit. FIG. 26 is a structural diagram showing the arrangement of bit lines and source lines shown in FIG. 25. It is a conceptual diagram which shows the structure according to the modification 1 of Embodiment 3 of the memory array 10 and its peripheral circuit. FIG. 28 is a structural diagram showing an arrangement of write word lines and source lines shown in FIG. 27. FIG. 28 is a circuit diagram showing a configuration of a data read circuit shown in FIG. 27. It is a conceptual diagram which shows the structure according to the modification 2 of Embodiment 3 of the memory array 10 and its peripheral circuit. It is a conceptual diagram which shows the structure according to the modification 3 of Embodiment 3 of the memory array 10 and its peripheral circuit. It is a conceptual diagram which shows the structure according to the modification 4 of Embodiment 3 of the memory array 10 and its peripheral circuit. It is a conceptual diagram which shows the structure according to Embodiment 4 of the memory array 10 and its peripheral circuit. FIG. 34 is a circuit diagram showing a configuration of a data read circuit shown in FIG. 33. 10 is a timing chart illustrating a data read operation according to the fourth embodiment. It is a conceptual diagram which shows the structure according to the modification 1 of Embodiment 4 of the memory array 10 and its peripheral circuit. It is a conceptual diagram which shows the structure according to the modification 2 of Embodiment 4 of the memory array 10 and its peripheral circuit. It is a conceptual diagram which shows the structure according to the modification 3 of Embodiment 4 of the memory array 10 and its peripheral circuit. It is the schematic which shows the structure of an MTJ memory cell. It is a conceptual diagram explaining the data read-out operation | movement from an MTJ memory cell. It is a conceptual diagram explaining the data write-in operation | movement with respect to an MTJ memory cell. It is a conceptual diagram explaining the relationship between the direction of the data write current at the time of data writing and the direction of a data write magnetic field. It is a conceptual diagram which shows the MTJ memory cell integratedly arranged by the matrix form.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are denoted by the same reference numerals.

[Embodiment 1]
FIG. 1 is a schematic block diagram showing an overall configuration of an MRAM device 1 according to the first embodiment of the present invention.

  Referring to FIG. 1, MRAM device 1 performs random access in response to external control signal CMD and address signal ADD, and executes input of write data DIN and output of read data DOUT.

  The MRAM device 1 includes a control circuit 5 that controls the overall operation of the MRAM device 1 in response to a control signal CMD, and a memory array 10 having a plurality of MTJ memory cells arranged in a matrix. Although the configuration of the memory array 10 will be described in detail later, a plurality of write word lines WWL and read word lines RWL are arranged corresponding to the rows of MTJ memory cells, respectively. A bit line BL and a source line SL are arranged corresponding to each column of MTJ memory cells.

  The MRAM device 1 further includes a row decoder 20, a column decoder 25, a word line driver 30, a word line current control circuit 40, and read / write control circuits 50 and 60.

  Row decoder 20 performs row selection in memory array 10 in accordance with row address RA indicated by address signal ADD. Column decoder 25 performs column selection in memory array 10 in accordance with column address CA indicated by address signal ADD. The word line driver 30 selectively activates the read word line RWL or the write word line WWL based on the row selection result of the row decoder 20. A selected memory cell designated as a target of data reading or data writing operation is indicated by row address RA and column address CA.

  The word line current control circuit 40 is provided to flow a data write current to the write word line WWL during data writing. For example, by connecting each write word line WWL to the ground voltage VSS by the word line current control circuit 40, a data write current is applied to the write word line selectively coupled to the power supply voltage VDD by the word line driver 30. Can flow. Read / write control circuits 50 and 60 are arranged in a region adjacent to memory array 10 in order to cause a data write current and a sense current (data read current) to flow through the bit lines during data read and data write. This is a general term for circuits and the like.

  FIG. 2 is a conceptual diagram showing a configuration according to the first embodiment of memory array 10 and its peripheral circuits. In FIG. 2, a configuration related to data reading is mainly shown.

  Referring to FIG. 2, memory array 10 includes MTJ memory cells MC (hereinafter also simply referred to as “memory cells MC”) arranged in n rows × m columns and having the configuration shown in FIG. 39. Read word lines RWL1 to RWLn and write word lines WWL1 to WWLn are provided corresponding to MTJ memory cell rows (hereinafter also simply referred to as “memory cell rows”). Bit lines BL1 to BLm and source lines SL1 to SLm are provided corresponding to the MTJ memory cell columns (hereinafter also simply referred to as “memory cell columns”), respectively.

  FIG. 2 shows write word lines WWL1, WWL2, read word lines RWL1, RWL2, bit lines BL1, BL2, BLm, source lines corresponding to the first and second rows and the first, second and m columns. SL1, SL2, SLm and some memory cells are typically shown.

  In the following, when the write word line, the read word line, the bit line, and the source line are collectively expressed, they are represented using the symbols WWL, RWL, BL, and SL, respectively, and a specific write word line, When a read word line, a bit line, and a source line are shown, a suffix is added to these symbols, and they are expressed as RWL1, WWL1, BL1, SL1. The high voltage state (power supply voltage VDD) and low voltage state (ground voltage VSS) of the signal or signal line are also referred to as H level and L level, respectively.

  In the data read operation, word line driver 30 activates one of read word lines RWL1 to RWLn to H level according to the decoding result of row address RA, that is, the row selection result. In response to this, in each of the memory cells belonging to the selected memory cell row, the access transistor ATR is turned on, so that the magnetic tunnel junction MTJ is electrically connected between the corresponding bit line BL and source line SL. Combined with

  A data bus DB is arranged in a region adjacent to the memory array 10 along the same direction as the read word line RWL and the write word line WWL. Corresponding to each memory cell column, column selection lines CSL1 to CSLm for performing column selection are arranged. Column decoder 25 activates one of column selection lines CSL1 to CSLm to H level at the time of data reading in accordance with the decoding result of column address CA, that is, the column selection result.

  Bit line select gates BCSGa1 to BCSGam are arranged corresponding to bit lines BL1 to BLm, respectively. Bit line select gate BCSGa1 is a bit line precharge transistor Ta1 electrically coupled between power supply voltage VDD and bit line BL1, and a bit electrically coupled between data bus DB and bit line BL1. And line drive transistor Ta2.

  The precharge transistor Ta1 is composed of a P-type MOS transistor, and the bit line drive transistor Ta2 is composed of an N-type MOS transistor having a conductivity type opposite to that of the bit line precharge transistor Ta1. The gates of bit line precharge transistor Ta1 and bit line drive transistor Ta2 are coupled to column select line CSL1.

  Since each of bit line selection gates BCSGa2 to BCSGam arranged corresponding to the other memory cell columns is the same, detailed description will not be repeated.

  Corresponding to the source lines SL1 to SLm, source line selection gates SCSGa1 to SCSGam are arranged, respectively. Source line select gate SCSGa1 includes source line drive transistor Ta3 electrically coupled between ground voltage VSS and source line SL1, and source line electrically coupled between power supply voltage VDD and source line SL1. And a precharge transistor Ta4.

  The source line drive transistor Ta3 is composed of an N-type MOS transistor, and the source line precharge transistor Ta4 is composed of a P-type MOS transistor having a conductivity type opposite to that of the source line drive transistor Ta3. The gates of source line drive transistor Ta3 and source line precharge transistor Ta4 are coupled to column select line CSL1.

  Since the configurations of source line selection gates SCSGa2-SCSGam arranged corresponding to the other memory cell columns are the same, detailed description will not be repeated.

  In the following, when column selection lines CSL1 to CSLm, bit line selection gates BCSGa1 to BCSGam, and source line selection gates SCSGa1 to SCSGam are respectively generically referred to, column selection line CSL, bit line selection gate BCSGa and source line selection gate are simply referred to. Also referred to as SCSGa.

  Data read circuit 51r outputs read data DOUT according to the voltage of data bus DB.

FIG. 3 is a circuit diagram showing a configuration of data read circuit 51r.
Referring to FIG. 3, data read circuit 51r includes a differential amplifier 57, transfer gates TGa and TGb, a latch circuit 58, and a precharge transistor PTa.

  Differential amplifier 57 amplifies the voltage difference between the two input nodes and generates read data Dout. The transfer gate TGa operates in response to the trigger pulse φr. In response to the activation period of trigger pulse φr, transfer gate TGa electrically couples data bus DB to one of the input nodes of differential amplifier 57. A predetermined reference voltage VREF is input to the other input node of the differential amplifier 57.

  Similarly to the transfer gate TGa, the transfer gate TGb operates in response to the trigger pulse φr. In response to the activation period of trigger pulse φr, transfer gate TGb transmits the output of differential amplifier 57 to latch circuit 58. Latch circuit 58 outputs the latched output voltage of differential amplifier 57 as read data DOUT.

  Therefore, data read circuit 51r amplifies the voltage difference between data bus DB and reference voltage VREF during the activation period of trigger pulse φr, and sets the data level of read data DOUT. During the inactive period of trigger pulse φr, the level of read data DOUT is held by latch circuit 58.

  Precharge transistor PTa is electrically coupled between power supply voltage VDD and data bus DB, and is turned on / off according to control signal / PR. Control signal / PR is set to an active state (L level) during a precharge period of data bus DB. Control signal / PR is activated to L level in the active period of MRAM device 1 at least in a predetermined period before data read execution. On the other hand, in the data read operation during the active period of MRAM device 1, control signal / PR is inactivated to H level.

  As a result, in the precharge period in which the control signal / PR is activated to the L level, the data bus DB is precharged to the power supply voltage VDD similarly to the bit line BL. On the other hand, in the data read operation, control signal / PR is inactivated to H level, so that data bus DB is disconnected from power supply voltage VDD.

  FIG. 4 is a timing chart illustrating a data read operation according to the first embodiment. FIG. 4 shows the operation when the jth (j: natural number from 1 to m) memory cell column is selected as the data read target.

  Referring to FIG. 4, before time t0 when the data read operation is started, all read word lines RWL and column select lines CSL are inactivated (L level).

  In response to this, the bit line precharge transistor Ta1 in each bit line select gate BCSGa is turned on, and the source line precharge transistor Ta4 in each source select gate SCSGa is turned on, so that each bit line BL and each source line SL is precharged to the power supply voltage VDD.

  Data bus DB is precharged to power supply voltage VDD in response to control signal / PR set to an active state before data reading.

  When the data read operation is started at time t0, control signal / PR is deactivated to the H level. In response to this, the data bus DB is disconnected from the power supply voltage VDD by the turn-off of the precharge transistor PTa in the data read operation.

  The read word line corresponding to the selected row is activated to H level by the word line driver 30. As a result, the memory cells corresponding to the selected row are electrically coupled between each bit line BL and each source line SL. On the other hand, the remaining read word lines corresponding to the non-selected rows are maintained at the L level.

  Further, column selection line CSLj corresponding to the selected column is selectively activated and activated to the H level. In response to this, in the bit line selection gate BCSGaj and the source selection gate SCSGaj corresponding to the selected column, the bit line driving transistor Ta2 and the source line driving transistor Ta3 are turned on, and the bit line precharging transistor Ta1 and the source line precharging transistor Ta1 are turned on. Each of the charge transistors Ta4 is turned off.

  As a result, bit line select gate BCSGaj disconnects bit line BLj corresponding to the selected column from power supply voltage VDD, which is a precharge voltage, and is coupled to data bus DB. Source select gate SCSGaj electrically couples source line SLj corresponding to the selected column to ground voltage VSS. That is, only the source line SLj corresponding to the selected column is selectively driven to the ground voltage VSS.

  Therefore, a current path from the data bus DB (power supply voltage VDD precharge) to the bit line driving transistor Ta2 to the bit line BLj to the selected memory cell to the source line SLj (driven to the ground voltage VSS) is formed. A voltage change in the downward direction occurs at a speed corresponding to the electric resistance value of the selected memory cell.

  That is, since the voltage change rate from the precharge voltage in the data bus DB differs according to the storage data level of the selected memory cell, if the voltage of the data bus DB is detected at a constant timing during the data read operation, the selection is made. The stored data level of the memory cell can be read.

  On the other hand, although not shown, the remaining column selection lines corresponding to the non-selected columns are maintained at the L level, so that the bit lines BL and source lines corresponding to the non-selected columns are maintained at the precharge voltage. Is done.

  Therefore, a current corresponding to the difference in the precharge voltage flows between the bit line BL and the source line SL corresponding to the non-selected column. Therefore, by making the precharge voltage the same as that of the source line SL and the bit line BL, it is possible to avoid an unnecessary charge / discharge current from flowing through the bit line BL corresponding to the non-selected column.

  At a time t1 when a predetermined time has elapsed from the start of the data read operation, the trigger pulse φr is activated (H level) in a one-shot manner. In response to this, the data read circuit 51r detects the voltage of the data bus DB, further amplifies the voltage difference from the predetermined reference voltage VREF, and generates read data DOUT. Reference voltage VREF is determined to be an intermediate value of the voltage of data bus DB at time t1, which corresponds to the case where the stored data level is H level and L level, respectively.

  In this way, the voltage of the source line SL is not fixed to the ground voltage VSS to be driven at the time of data reading, but is precharged in the same manner as the bit line BL before the data reading, so that the selection directly necessary for the data reading operation is performed. Since the charge / discharge current is consumed only by the bit line BLj corresponding to the column, the data read operation can be reduced in power consumption.

  Further, the bias voltage applied to both ends of the magnetic tunnel junction MTJ in the selected memory cell is adjusted by adjusting the voltage change rate of the source line SLj corresponding to the selected column at the time of starting data reading. Can be suppressed. The voltage change rate in the source line SLj can be adjusted by the amount of passing current depending on the transistor size of the source line driving transistor Ta3. At least the transistor size of the source line drive transistor Ta3 is designed to be smaller than that of the source line precharge transistor Ta4 through which a current for precharging passes.

  As a result, a change in the electrical resistance value corresponding to the stored data level is likely to appear in each memory cell, so that the voltage of the data bus DB caused by the difference in the stored data level at the voltage detection timing (time t1) of the data bus DB. The data read margin can be secured by expanding the difference.

  After the end of the read operation, all read word lines RWL and column select lines CSL are deactivated (L level) as before time t0. Since control signal / PR is also activated again, each bit line BL, each source line SL, and data bus DB are precharged to power supply voltage VDD.

  In the first embodiment, the precharge voltage of the bit line BL, the source line SL, and the data bus DB is the power supply voltage VDD. However, the precharge voltage can be set to different voltage levels such as VDD / 2. .

[Variation 1 of Embodiment 1]
FIG. 5 is a conceptual diagram showing a configuration according to the first modification of the first embodiment of the memory array 10 and its peripheral circuits.

  Referring to FIG. 5, in the configuration according to the first modification of the first embodiment, bit line selection gates BCSGb1 to BCSGbm and source line selection are used instead of bit line selection gates BCSGa1 to BCSGam and source line selection gates SCSGa1 to SCSGam. 2 is different from the configuration of the first embodiment shown in FIG. 2 in that gates SCSGb1 to SCSGbm are provided, and that data read circuit 52r is provided instead of data read circuit 51r. Since the configuration of other parts is the same as that of the first embodiment, detailed description will not be repeated.

  In Modification 1 of Embodiment 1, the precharge voltage of bit line BL and source line SL is set to ground voltage VSS, and the drive voltage of source line SL in the data read operation is set to power supply voltage VDD. That is, the polarities of the precharge voltage and the drive voltage during the data read operation are reversed from those in the first embodiment.

  Bit line select gate BCSGb1 is a bit line precharge transistor Tb1 electrically coupled between ground voltage VSS and bit line BL1, and a bit electrically coupled between data bus DB and bit line BL1. Line drive transistor Tb2. Bit line precharge transistor Tb1 and bit line drive transistor Tb2 are formed of N-type MOS transistors. The inverted voltage of the column selection line CSL1 is input to the gate of the bit line precharge transistor Tb1. Bit line drive transistor Tb2 has its gate coupled to column select line CSL1.

  Since the configurations of bit line select gates BCSG2b to BCSGbm arranged corresponding to the other memory cell columns are the same, detailed description will not be repeated.

  Source line select gate SCSGb1 has a source line drive transistor Tb3 electrically coupled between power supply voltage VDD and source line SL1, and a source line electrically coupled between ground voltage VSS and source line SL1. And a precharge transistor Tb4.

  The source line drive transistor Tb3 is composed of a P-type MOS transistor, and the source line precharge transistor Tb4 is composed of an N-type MOS transistor. The inverted voltage of the column selection line CSL1 is input to the gates of the source line drive transistor Tb3 and the source line precharge transistor Tb4.

  Since the configurations of source line select gates SCSGa2-SCSGam arranged corresponding to the other memory cell columns are the same, detailed description will not be repeated.

  Hereinafter, when the bit line selection gates BCSGb1 to BCSGbm and the source line selection gates SCSGb1 to SCSGbm are collectively referred to as the bit line selection gate BCSGb and the source line selection gate SCSGb, respectively.

  Each bit line select gate BCSGb electrically couples corresponding bit line BL to ground voltage VSS, which is a precharge voltage, when corresponding column select line CSL is in an inactive state (L level). When column selection line CSL to be activated is in an active state (H level), corresponding bit line BL is electrically coupled to data bus DB.

  Each source line select gate SCSGb electrically couples corresponding source line SL to ground voltage VSS as a precharge voltage when corresponding column select line CSL is in an inactive state (L level). When the column selection line CSL to be activated is in the active state (H level), the corresponding source line SL is driven to the power supply voltage VDD.

FIG. 6 is a circuit diagram showing a configuration of data read circuit 52r.
Referring to FIG. 6, data read circuit 52r is different from data read circuit 51r in that it includes a precharge transistor PTb instead of precharge transistor PTa. Since the configuration of other parts is similar to that of data read circuit 51r, detailed description will not be repeated.

  Precharge transistor PTb is electrically coupled between ground voltage VSS and data bus DB, and is turned on / off according to control signal PR. Control signal PR is set to an active state (H level) during a precharge period of data bus DB. Control signals PR and / PR have different signal levels in the active state, but the period during which they are activated is set similarly.

  As a result, in the precharge period in which the control signal PR is activated to the H level, the data bus DB is precharged to the ground voltage VSS similarly to the bit line BL. On the other hand, during data read operation, control signal PR is inactivated to L level, so that data bus DB is disconnected from ground voltage VSS.

  FIG. 7 is a timing chart illustrating a data read operation according to the first modification of the first embodiment.

  Referring to FIG. 7, before time t0, each bit line BL and each source line SL are precharged to ground voltage VSS. Similarly, the data bus DB is precharged to the ground voltage VSS.

  When the data read operation is started at time t0, the read word line RWL corresponding to the selected row is activated, and the memory cell corresponding to the selected row is electrically connected between each bit line BL and each source line SL. Combined.

  Data bus DB is disconnected from ground voltage VSS by the turn-off of precharge transistor PTb during the data read operation.

  Further, column selection line CSLj corresponding to the selected column is selectively activated and activated to the H level. In response, bit line BLj and source line SLj corresponding to the selected column are electrically coupled to data bus DB and power supply voltage VDD, respectively. That is, only the source line SLj corresponding to the selected column is selectively driven to the power supply voltage VDD.

  The voltage change rate of the source line SLj corresponding to the selected column can be adjusted by the transistor size of the source line drive transistor Tb3 as in the case of the first embodiment. Thereby, it is possible to suppress the bias voltage applied to both ends of the magnetic tunnel junction MTJ in the selected memory cell, and to secure a signal margin for the data read operation. The transistor sizes of the source line drive transistor Tb3 and the source line precharge transistor Tb4 are designed similarly to the transistor sizes of the source line drive transistor Ta3 and the source line precharge transistor Ta4.

  In response to activation of column selection line CSLj, current path from data bus DB (ground voltage VSS precharge) to bit line drive transistor Tb2 to bit line BLj to selected memory cell to source line SLj (driven to power supply voltage VDD) And a voltage change in the upward direction occurs at a speed corresponding to the electric resistance value of the selected memory cell in the data bus DB.

  Therefore, as in the case of the first embodiment, trigger pulse φr is activated (H level) in a one-shot manner at a predetermined time t1, and the data read circuit 52r detects the voltage of the data bus DB and the reference voltage. The read data DOUT can be generated by amplifying the voltage difference from VREF.

  In addition, since each of the bit line BL and the source line SL corresponding to the non-selected column is maintained at the precharge voltage, an unnecessary charge / discharge current is prevented from flowing through the bit line BL corresponding to the non-selected column. it can. As a result, it is possible to reduce the power consumption as in the first embodiment.

  In the first modification of the first embodiment, since the precharge voltage is set to the ground voltage VSS, the charge current consumed during precharge in the bit line BL and the source line SL can be further reduced. As a result, the power consumption can be further reduced as compared with the first embodiment.

[Modification 2 of Embodiment 1]
FIG. 8 is a conceptual diagram showing a configuration according to the second modification of the first embodiment of the memory array 10 and its peripheral circuits.

  Referring to FIG. 8, in the configuration according to the second modification of the first embodiment, in addition to the configuration according to the first modification of the first embodiment shown in FIG. 5, a dummy memory cell for generating reference voltage VREF DMC and dummy bit line DBL, dummy source line DSL, dummy bit line selection gate BCSGd, and dummy source line selection gate SCSGbd provided in correspondence therewith are further arranged.

  Further, a data bus / DB for transmitting reference voltage VREF, which forms a data bus pair DBP with data bus DB, is provided. A data read circuit 53r is provided in place of the data read circuit 52r. Since the configuration of other parts is the same as that of the first embodiment, detailed description will not be repeated.

  Dummy memory cell DMC includes dummy resistor MTJd and dummy access transistor ATRd connected in series between dummy bit line DBL and dummy source line DSL. Dummy resistor MTJd has an electric resistance value Rd corresponding to an intermediate value between electric resistance values R1 and R0 corresponding to the case where the stored data level is at the H level and the L level, respectively. Since power supply voltage VDD is applied to the gate of dummy access transistor ATRd, dummy resistor MTJd is electrically coupled between dummy bit line DBL and dummy source line DSL.

  Dummy selection line CSLd is always set to an active state (H level) at the time of data reading regardless of the column selection result.

  The dummy bit line selection gate BCSGd is electrically coupled between the ground voltage VSS and the dummy bit line DBL, and has a transistor switch that is turned on / off in response to the inverted voltage of the dummy selection line CSLd. Therefore, dummy bit line select gate BCSGd precharges dummy bit line DBL to ground voltage VSS before data reading when dummy select line CSLd is set to the inactive state (L level), and dummy select line CSLd At the time of data reading set to an active state (H level), dummy bit line DBL is disconnected from ground voltage VSS. Dummy bit line DBL is electrically coupled to data bus / DB.

  Dummy source line selection gate SCSGbd has a configuration similar to that of source line line selection gate SCSGb, precharges dummy source line DSL to ground voltage VSS before data reading, and sets dummy source line DSL at the time of data reading. Drive to power supply voltage VDD. That is, the voltage of the dummy source line DSL is set similarly to the source line SL corresponding to the selected column.

  With this configuration, at the time of data reading, dummy bit line DBL and data bus / DB are coupled to dummy memory cell DMC, and data bus DB is coupled to the selected memory cell.

FIG. 9 is a circuit diagram showing a configuration of data read circuit 53r.
Referring to FIG. 9, data read circuit 53r differs from data read circuit 52r in that it further includes a precharge transistor PTc and a transfer gate TGc arranged corresponding to data bus / DB. Since the configuration of other parts is similar to that of data read circuit 51r, detailed description will not be repeated.

  Precharge transistor PTc is electrically coupled between ground voltage VSS and data bus / DB, and is turned on / off in response to control signal PR, similarly to precharge transistor PTb. Therefore, before data reading, each of data buses DB and / DB is precharged to ground voltage VSS. In data reading, each of data buses DB and / DB is disconnected from ground voltage VSS.

  Transfer gate TGc is connected between data bus / DB and the input node of differential amplifier 57, and operates in response to trigger pulse φr, similarly to transfer gate TGa. Therefore, transfer gates TGa and TGc electrically couple data buses DB and / DB to one of the input nodes of differential amplifier 57 during the activation period of trigger pulse φr.

  Differential amplifier 57 generates read data DOUT according to the transmitted voltage difference between data buses DB and / DB.

  FIG. 10 is a timing chart illustrating a data read operation according to the second modification of the first embodiment.

  Referring to FIG. 10, the voltages on dummy selection line CSLd and dummy source line DSL are set similarly to column selection line CSLj and source line SLj corresponding to the selected column.

  FIG. 10 shows voltage waveforms of dummy bit line DBL and data bus / DB in addition to the timing chart shown in FIG.

  The dummy bit line DBL and the data bus / DB, which are electrically coupled to the dummy source line DSL driven by the power supply voltage VDD via the dummy memory cell DMC, have an intermediate electric resistance value Rd of the dummy resistance MTJd. A voltage change occurs at a speed corresponding to. That is, the voltage of the data bus / DB is at an intermediate speed between the voltage change speed of the data bus DB when the storage data level is H level and the voltage change speed of the data bus DB when the storage data level is L level. Will change.

  Therefore, in the same manner as in the first modification of the first embodiment, at predetermined time t1, trigger pulse φr is activated (H level) in a one-shot fashion, and data buses DB and / DB are read by data read circuit 53r. The read data DOUT is generated by detecting and amplifying the voltage difference.

  In order to accurately generate the reference voltage VREF using the dummy memory cell DMC, a first current path including the selected memory cell formed between the data read circuit 53r and the ground voltage VSS, a dummy It is necessary to design the data buses DB, / DB, the bit line BL, and the dummy bit line DBL so that the electric resistance value with the second current path including the memory cell DMC becomes the same value. For example, the resistance value per unit length of these wirings may be designed in consideration of the above-described conditions.

  As described above, by generating the reference voltage VREF to be compared using the dummy memory cell, even if an error occurs in the voltage detection timing of the data reading circuit 53r, that is, the activation timing of the trigger pulse φr, data reading is performed. Can be performed accurately. That is, even if the voltage detection timing of the data read circuit 53r varies, a data read margin can be secured.

[Modification 3 of Embodiment 1]
In the third modification of the first embodiment, the arrangement of dummy memory cells in the open bit line configuration is shown.

  FIG. 11 is a conceptual diagram showing a configuration according to the third modification of the first embodiment of the memory array 10 and its peripheral circuits.

  Referring to FIG. 11, memory array 10 is divided into two memory mats MTa and MTb along the row direction. In each of memory mats MTa and MTb, read word line RWL and write word line WWL are arranged corresponding to each memory cell row, and bit line BL and source line SL are arranged corresponding to each memory cell column.

  In each of the memory mats MTa and MTb, m bit lines are arranged based on a so-called open bit line configuration. In FIG. 11, bit lines and source lines arranged in one memory mat MTa are denoted as BL1 to BLm, SL1 to SLm, and bit lines and source lines arranged in the other memory mat MTa are designated / BL1 to / BL. Indicated as BLm, / SL1- / SLm. Memory cell MC is provided between bit line BL and source line SL in each memory cell row. In addition, when the bit lines are collectively expressed as / BL1 to / BLm and the source lines / SL1 to / SLm, they are simply expressed as the bit line / BL and the source line / SL.

  Bit line selection gates BCSGb1a to BCSGbma are arranged corresponding to bit lines BL1 to BLm of memory mat MTa, respectively. Similarly, bit line selection gates BCSGb1b to BCSGbmb are arranged corresponding to bit lines / BL1 to / BLm of memory mat MTb, respectively.

  Each of bit line selection gates BCSGb1a to BCSGbma has the same configuration as bit line selection gate BCSGb, and precharges corresponding bit line BL to ground voltage VSS before data reading, and also corresponds to data reading. When the memory cell column is selected, the corresponding bit line BL is electrically coupled to the data bus DB.

  Each of bit line selection gates BCSGb1b to BCSGbmb has a configuration similar to that of bit line selection gate BCSGb, and precharges corresponding bit line / BL to ground voltage VSS before data reading and corresponds to data reading. When the memory cell column to be selected is selected, the corresponding bit line / BL is electrically coupled to the data bus / DB.

  Source line select gates SCSGb1a to SCSGbma are arranged corresponding to source lines SL1 to SLm of memory mat MTa, respectively. Similarly, source line select gates SCSGb1b to SCSGbmb are arranged corresponding to source lines / SL1 to / SLm of memory mat MTb, respectively.

  Each of source line selection gates SCSGb1a to SCSGbma and SCSGb1b to SCSGbmb has a configuration similar to that of source line selection gate SCSGb, and precharges corresponding source line SL or / SL to ground voltage VSS before data reading. When the corresponding memory cell column is selected at the time of data reading, the corresponding source line SL or / SL is driven to the power supply voltage VDD.

  Precharge and data voltage detection and amplification are performed on data buses DB and / DB constituting data bus pair DBP by data read circuit 53r having the configuration shown in FIG.

  In each of memory mats MTa and MTb, a plurality of dummy memory cells DMC are arranged so as to form one dummy row. The plurality of dummy memory cells arranged in the memory mat MTa are provided between the bit lines BL1 to BLm and the source lines SL1 to SLm, respectively. That is, the plurality of memory cells MC and the dummy memory cells DMC belonging to the same memory cell column share the bit line BL and the source line SL, and the bit line selection gate BCSGb and the source line selection gate SCSGb. Arranged.

  Similarly, the plurality of dummy memory cells arranged in memory mat MTb are provided between bit lines / BL1 to / BLm and source lines / SL1 to / SLm, respectively. That is, a plurality of memory cells MC and dummy memory cells DMC belonging to the same memory cell column share bit line / BL and source line / SL, and bit line selection gate BCSGb and source line selection gate SCSGb. Placed in.

  In memory mat MTa, read word lines RWL1a, RWL2a,... And write word lines WWL1a, WWL2a,. Further, a dummy read word line DRWLa and a dummy write word line DWWLa are arranged corresponding to the dummy rows. Note that it is not always necessary to perform magnetic data writing on the dummy memory cell DMC, but even in such a case, the continuity of the shape between the dummy memory cell DMC and the region in which the memory cell MC is disposed. It is desirable to arrange a dummy write word line DWWLa in order to ensure the performance.

  Similarly, read word lines RWL1b, RWL2b,... And write word lines WWL1b, WWL2b,... Are arranged corresponding to the memory cell rows in memory mat MTb. Further, a dummy read word line DRWLb and a dummy write word line DWWLb are arranged corresponding to the dummy row.

  FIG. 12 is a timing chart illustrating a data read operation according to the third modification of the first embodiment.

  Referring to FIG. 12, dummy read word lines DRWLa and DRWLb are activated in a non-selected memory block that does not include a selected memory cell from which data is to be read. On the other hand, in the selected memory block including the selected memory cell, the read word line RWL corresponding to the row selection result is activated.

  For example, when the selected memory cell belongs to the i-th row (i: natural number) of the memory mat MTa, the read word line RWLia is activated (H level) in the selected memory mat MTa, and the dummy read word line DRWLa is maintained in an inactive state (L level). In unselected memory mat MTb, dummy read word line DRWLb is activated, but read word lines RWL1b to RWLnb are all maintained in an inactive state (L level).

  On the other hand, when the selected memory cell belongs to the i-th row (i: natural number) of the memory mat MTb, the read word line RWLib is activated (H level) in the selected memory mat MTb, and the dummy read word Line DRWLb is maintained in an inactive state (L level). At this time, in the unselected memory mat MTa, the dummy read word line DRWLa is activated, while the read word lines RWL1a to RWLna are all maintained in an inactive state (L level).

  As a result, memory cell MC is electrically coupled between each of the bit line and the source line in the selected memory mat, and between the bit line and the source line in the non-selected memory mat. Dummy memory cell DMC is electrically coupled.

  Further, out of the bit lines BL and / BL and the source lines SL and / SL precharged to the ground voltage VSS, the bit lines BLj and / BLj corresponding to the selected column are respectively connected to the data buses DB and / DB. The coupled source lines SLj and / SLj corresponding to the selected column are driven to the power supply voltage VDD.

  In FIG. 12, when memory mat MTa is selected, that is, when the selected memory cell is coupled to bit line BLj and data bus DB, and dummy memory cell DMC is coupled to bit line / BLj and data bus / DB. A voltage waveform is shown.

  Since voltage changes of bit lines BLj, / BLj and source lines SLj, / SLj and data buses DB, / DB corresponding to the selected column are the same as in FIG. 10, detailed description will not be repeated.

  Therefore, as in the second modification of the first embodiment, the data read margin can be ensured even if the voltage detection timing of data read circuit 53r, that is, the activation timing of trigger pulse φr changes.

  Further, compared with the configuration of the second modification of the first embodiment, it is not necessary to provide dummy bit lines DBL, dummy source lines DSL and selection gates corresponding to these dummy memory cells. You can plan.

  Electricity per unit length of bit lines BL and / BL, source lines SL and / SL, and data buses DB and / DB arranged in pairs with respect to each of memory mats MTa and MTb. If the materials, the cross-sectional shape, the cross-sectional area, etc. are similarly designed so that the resistance values are the same, it is formed between the data read circuit 53r and the ground voltage VSS without special consideration. The reference voltage VREF can be accurately generated by aligning the electric resistance values of the first current path including the selected memory cell and the second current path including the dummy memory cell DMC.

[Modification 4 of Embodiment 1]
In the fourth modification of the first embodiment, the arrangement of dummy memory cells in the folded bit line configuration is shown.

  FIG. 13 is a conceptual diagram showing a configuration according to the fourth modification of the first embodiment of the memory array 10 and its peripheral circuits.

Referring to FIG. 13, in the configuration according to the fourth modification of the first embodiment, bit line pair BLP and source line SL are arranged corresponding to each memory cell column. Bit line pair BL
P is composed of complementary bit lines BL and / BL.

  FIG. 13 representatively shows a bit line pair BLP1 constituted by bit lines BL1 and / BL1 and a source line SL1 arranged corresponding to the first memory cell column.

  Bit line selection gates BCSGb1 and / BCSGb1 are arranged corresponding to bit lines BL1 and / BL1, respectively. Bit line select gate BCSGb1 has the same configuration as bit line select gate BCSGb, precharges bit line BL1 to ground voltage VSS before data read, and the corresponding memory cell column is selected during data read. In some cases, bit line BL1 is electrically coupled to data bus DB.

  Bit line select gate / BCSGb1 has the same configuration as bit line select gate BCSGb, precharges bit line / BL1 to ground voltage VSS before data reading, and selects the corresponding memory cell column during data read. If so, bit line / BL1 is electrically coupled to data bus / DB.

  Corresponding to source line SL1, source line select gate SCSGb1 is arranged. Source line select gate SCSGb has the same configuration as source line select gate SCSGb, and precharges source line SL1 to ground voltage VSS before data read, and the corresponding memory cell column is selected during data read. In this case, the source line SL1 is driven to the power supply voltage VDD.

  Similarly for the subsequent memory cell columns, bit line pairs, bit line selection gates, source lines and source line selection gates corresponding to complementary bit lines constituting the bit line pairs are arranged.

  Precharge and data voltage detection and amplification are performed on data buses DB and / DB constituting data bus pair DBP by data read circuit 53r having the configuration shown in FIG.

  Read word lines RWL1a, RWL2a,... And write word lines WWL1, WWL2,. Memory cell MC is provided for each row between one of bit lines BL and / BL and source line SL. For example, the memory cells MC belonging to the first column will be described. The memory cells in the first row are provided between the bit line BL1 and the source line SL1, and the memory cells in the second row are Provided between BL1 and source line SL1. Similarly, each memory cell MC is provided between the bit line BL and the source line SL in the odd-numbered row, and is provided between the bit line / BL and the source line in the even-numbered row.

  As a result, when read word line RWL is selectively activated according to the row selection result, between each bit line BL and source line SL or between bit line / BL and source line SL in each memory cell column. Are coupled to the memory cell MC.

  The dummy memory cells DMC are arranged so as to form two dummy rows. Dummy read word lines DRWL0 and DRWL1 and dummy write word lines DWWL0 and DWWL1 are arranged corresponding to the dummy rows, respectively. As already described, the dummy write word lines DWWL0 and DWWL1 are arranged in consideration of the continuity of the shape with the area where the memory cells MC are arranged.

  In each memory cell column, dummy memory cells DMC are provided between bit lines BL and / BL and source line SL, respectively. That is, the plurality of memory cells MC and the dummy memory cells DMC belonging to the same memory cell column include the bit lines BL and / BL and the source line SL, and the bit line selection gates BCSGb and / BCSGb and the source line selection gate SCSGb. Efficiently arranged to share.

  FIG. 14 is a timing chart illustrating a data read operation according to the fourth modification of the first embodiment.

  Referring to FIG. 14, dummy read word lines DRWL0 and DRWL1 are selected so that one of bit lines BL and / BL which is not coupled to memory cell MC is coupled to dummy memory cell DMC in each bit line pair. Activated.

  That is, when the odd row is selected, the dummy read word line DRWL1 is activated, and when the even row is selected, the dummy read word line DRWL0 is activated. As a result, in each bit line pair, one of each of memory cell MC and dummy memory cell DMC is coupled between bit lines BL and / BL and source line SL.

  In FIG. 14, as an example, the i-th row (i: odd number) is selected. As a result, in each memory cell column, memory cell MC is electrically coupled between bit line BL and source line SL, and dummy memory cell DMC is electrically coupled between bit line / BL and source line SL. Combined with

  Further, out of each bit line BL, / BL and each source line SL precharged to ground voltage VSS, bit lines BLj and / BLj corresponding to the selected column are coupled to data buses DB and / DB, respectively. Source line SLj corresponding to the selected column is driven to power supply voltage VDD.

  Since voltage changes of bit lines BLj, / BLj and source lines SLj, / SLj and data buses DB, / DB corresponding to the selected column are the same as those in FIGS. 10 and 12, detailed description will not be repeated.

  Therefore, similarly to the configuration according to the third modification of the first embodiment, a data read margin can be ensured even when the voltage detection timing of data read circuit 53r varies, and the source line, the bit line pair, and these The corresponding selection gate can be shared with the memory cell MC to reduce the size of the device. In addition, the first current path including the selected memory cell and the second current path including the dummy memory cell DMC, which are formed between the data read circuit 53r and the ground voltage VSS without special consideration. Therefore, the reference voltage VREF can be accurately generated.

  Furthermore, in the configuration according to the fourth modification of the first embodiment, data reading based on the folded bit line configuration can be executed, so that it is possible to increase resistance to electrical noise for bit line pair BLP and data bus pair DBP. it can.

[Embodiment 2]
In the second embodiment, a structure for supplying a data write current so as to stabilize a data write operation to a memory cell will be described.

  FIG. 15 is a conceptual diagram showing a configuration according to the second embodiment of memory array 10 and its peripheral circuits.

  Referring to FIG. 15, memory cell MC, read word line RWL, bit line pair BLP, source line SL, and the like, and the circuit group related to data reading in memory array 10 are the same as those shown in FIG. Because there are, detailed description will not be repeated.

  FIG. 15 further shows a word line current control circuit 40 and a data write circuit 51w for allowing a data write current to flow. Further, a bit line coupling transistor 62 is provided corresponding to each bit line pair. Bit line coupling transistor 62 is arranged in a region opposite to bit line selection gate BCGSb and source line selection gate SCSGb across memory array 10. FIG. 15 representatively shows bit line coupling transistor 62-1 corresponding to bit line pair BLP1.

  Bit line coupling transistor 62 electrically couples one ends of complementary bit lines constituting a corresponding bit line pair during data writing. For example, bit line coupling transistor 62-1 electrically couples bit lines BL1 and / BL1 in response to a control signal WE activated to H level at the time of data writing.

  Word line current control circuit 40 couples each write word line WWL to ground voltage VSS in a region opposite to word line driver 30 across memory array 10. The word line driver 30 is activated by electrically coupling the write word line WWL corresponding to the selected row with the power supply voltage VDD according to the row selection result. Therefore, in response to selective activation of write word line WWL by word line driver 30, data write current Ip can flow in the direction from word line driver 30 to word line current control circuit 40.

FIG. 16 is a circuit diagram showing a configuration of data write circuit 51w.
Referring to FIG. 16, data write circuit 51w operates in response to control signal WE. Data write circuit 51w includes a P-type MOS transistor 151 for supplying a constant current to internal node Nw0, a P-type MOS transistor 152 and a current source 153 that constitute a current mirror circuit for controlling the passing current of transistor 151. Including.

  Data write circuit 51w further includes inverters 154, 155, and 156 that operate in response to an operation current supplied from internal node Nw0. Inverter 154 inverts the voltage level of write data DIN and transmits it to data bus DB. Inverter 155 inverts the voltage level of write data DIN and transmits it to the input node of inverter 156. Inverter 156 inverts the output of inverter 154 and transmits it to data bus / DB.

  Therefore, data write circuit 51w sets the voltages of data buses DB and / DB to one of power supply voltage VDD and ground voltage VSS according to the voltage level of write data DIN.

  Referring to FIG. 15 again, column select line CSL corresponding to the selected column is activated to H level also in data writing. In response to this, the bit lines BL and / BL corresponding to the selected column are electrically connected to the data buses DB and / DB respectively set to voltages according to the level of the write data DIN by the data write circuit 51w. Combined.

  As already described, in each memory cell column, bit lines BL and / BL are electrically coupled to each other by bit line coupling transistor 62. Therefore, in the selected column, in response to activation (H level) of corresponding column selection line CSL, data write circuit 51w to data bus DB (/ DB) to bit line selection gate BCSGb (/ BCSGb) to bit Round-trip current formed by line BL (/ BL) to bit line coupling transistor 62 to bit line / BL (BL) to bit line selection gate / BCSGb (BCSGb) to data bus / DB (DB) to data write circuit 51w A data write current ± Iw in a direction corresponding to the level of the write data DIN can be passed through the path.

  The word line driver 30 selectively activates the read word line RWL or the write word line WWL based on the row selection result at a timing in response to the internal clock CLK. In contrast, the column decoder 25 selectively activates the column selection line CSL based on the column selection result at a timing in response to the column selection clock / CS.

FIG. 17 is a circuit diagram showing a configuration of the column selection clock generation circuit 200.
Referring to FIG. 17, column selection clock generation circuit 200 includes a delay stage 202 composed of a plurality of inverters, and logic gates 203 and 204.

  The delay stage 202 delays the internal clock CLK by a predetermined delay time ΔTW. Logic gate 203 outputs an OR logic operation result of the internal clock delayed by delay stage 202 and control signal / WE. Control signal / WE is set to an active state (L level) and an inactive state (H level) in data writing and data reading, respectively. Logic gate 204 outputs the NAND logic operation result of the output of logic gate 203 and internal clock CLK as column selection clock / CS.

FIG. 18 is a timing chart for explaining the phase change of the column selection clock.
Referring to FIG. 18, at the time of data reading, control signal / WE is set to H level, so that logic gate 203 always outputs H level. As a result, the column selection clock / CS corresponds to an inverted signal of the internal clock CLK. Therefore, the activation timings of internal clock CLK and column selection clock / CS are the same.

  On the other hand, at the time of data writing, control signal / WE is set to the L level, so that logic gate 203 outputs the internal clock delayed by delay stage 202. As a result, the activation timing of the column selection clock / CS is set later than the internal clock CLK by the delay time ΔTW by the delay stage 204.

  FIG. 19 is a timing chart illustrating data reading and data writing operations according to the second embodiment.

  Referring to FIG. 19, after the data read operation is started at time ts, at time t0, word line driver 30 activates read word line RWLi corresponding to the selected row based on internal clock CLK. Similarly, column decoder 25 activates column selection line CSLj corresponding to the selected column at a timing substantially similar to time t0, based on column selection clock / CS having an activation timing substantially similar to internal clock CLK. To do.

  In response to activation of read word line RWL and column select line CSL, a sense current (data read current) is supplied to the memory cell, and bit line BLj, / BLj and source line SLj corresponding to the selected column are shown in FIG. 14 is generated, and data reading similar to that in the fourth modification of the first embodiment is performed.

  That is, at the time of data reading, activation of read word line RWL and column selection line CSL is determined based on the same timing. That is, the activation order of the read word line RWL and the column selection line CSL is not particularly limited, and each is activated at the fastest timing in order to increase the access speed.

At the time of data writing, the word line driver 30 is similar to that at the time of data reading.
It operates at a timing based on the internal clock CLK. Therefore, after the data write operation is started at time ts, word line driver 30 activates write word line WWLi corresponding to the selected row at time t0 similar to that at the time of data read. In response to this, supply of the data write current to the write word line WWLi is started.

  On the other hand, column decoder 25 activates column selection line CSLj corresponding to the selected column at time t3 after time t0, based on column selection clock / CS having an activation timing delayed by ΔTW from internal clock CLK. Turn into. In response to this, the bit lines BLj and / BLj corresponding to the selected column are set to one of the power supply voltage VDD and the ground voltage VSS via the data buses DB and / DB, respectively, and the data write current for the bit line is set. Supply is started.

  As described above, at the time of data writing, the supply of the data write current to the write word line starts at the timing when the supply of the data write current to the bit line corresponding to the selected column is started. It is set intentionally later than the timing. That is, the supply start timing of the data write current is set stepwise.

  As a result, the data generated by the data write current ± Iw flowing through the bit line BL after the data write magnetic field generated by the data write current Ip flowing through the write word line WWL is first applied to the selected memory cell. A write magnetic field is further applied.

  Next, the relationship between the stepwise supply of the data write current as described above and the magnetic data write characteristics for the memory cell will be described.

FIG. 20 is a cross-sectional view showing the configuration of the tunnel magnetoresistive element in the memory cell.
Referring to FIG. 20, tunneling magneto-resistance element TMR corresponding to magnetic tunnel junction MTJ has antiferromagnetic layer 101 and a fixed magnetic field formed on antiferromagnetic layer 101 and having a fixed magnetic field in a certain direction. A partial region of the magnetic layer 102, a free magnetic layer 103 that is magnetized by an applied magnetic field, a tunnel barrier 104 that is an insulator film formed between the fixed magnetic layer 102 and the free magnetic layer 103, a contact electrode 105, including.

  The antiferromagnetic material layer 101, the fixed magnetic layer 102, and the free magnetic layer 103 are formed of an appropriate magnetic material such as FeMn, NiFe. The tunnel barrier 104 is formed of Al2O3 or the like.

  Tunneling magneto-resistance element TMR is electrically coupled to the upper wiring via barrier metal 106 that is disposed as necessary and is a buffer material for electrically coupling to the metal wiring. Contact electrode 105 is electrically coupled to a lower wiring (not shown). For example, the upper wiring corresponds to the bit line BL, and the lower wiring corresponds to a metal wiring coupled to the access transistor ATR.

  In this way, the tunnel magnetoresistive element TMR having a magnetic tunnel junction can be electrically coupled between the upper wiring and the lower wiring.

  FIG. 21 is a conceptual diagram showing the magnetization direction in the free magnetic layer in the tunnel magnetoresistive element. FIG. 21 shows, as an example, a plan view of the free magnetic layer 103 when the tunnel magnetoresistive element TMR is provided in a rectangular shape.

  Referring to FIG. 21, in rectangular free magnetic layer 103, an easy axis (EA: Easy Axis) is formed in the length direction (left-right direction in FIG. 21), and the width direction (up-down direction in FIG. 21). A hard axis (HA) is formed on the surface.

  The data write magnetic field generated by the data write current flowing through the bit line BL has a direction along the easy axis (EA). On the other hand, the data write magnetic field generated by the data write current flowing through the write word line WWL has a direction along the hard axis (HA). In order to set the direction of the data write magnetic field as described above, for example, for a rectangular memory cell, the write word line WWL is arranged along the long side direction, and the bit line BL is arranged along the short side direction. The

  In the easy axis region 107 near the center, the magnetization direction is easily reversed in response to an external magnetic field applied in the easy axis direction. On the other hand, in the hard magnetization axis regions 108 and 109 at the left and right ends, the magnetization direction is not easily reversed even when an external magnetic field in the easy magnetization axis direction is applied.

  22 and 23 show hysteresis curves for explaining the magnetization characteristics in the easy axis region and the hard axis region, respectively.

  Referring to FIG. 22, the easy axis region 107 is magnetized to + Mc when a + direction magnetic field larger than a predetermined magnetic field + Hc in the easy axis direction is applied, and has a − direction larger than a predetermined magnetic field −Hc. When a magnetic field is applied, it is magnetized to -Mc. Therefore, when a magnetic field of a predetermined level or less in the range of −Hc to + Hc is applied, the magnetization direction does not change and the memory cell has desirable characteristics.

  Referring to FIG. 23, hard-magnetization axis regions 108 and 109 are not easily magnetized in response to a magnetic field in the easy-magnetization axis direction, and have a characteristic that the direction and amount of magnetization gradually change. Therefore, unlike the easy axis region where the direction and amount of magnetization are set in a binary manner in response to a magnetic field in the easy axis direction, the hard axis region has undesirable characteristics as a memory cell. Yes.

FIG. 24 is a conceptual diagram illustrating the magnetization of the free magnetic layer during data writing.
Referring to FIG. 24, in order to stably write data to the memory cell, as shown in FIG. 24 (a) or (b), the easy axis region 107 of the free magnetic layer is set to the easy axis. It is necessary to uniformly magnetize the hard magnetization axis regions 108 and 109 in one direction along the hard magnetization easy axis.

  As described above, by delaying the activation timing of the column selection line CSL from the write word line WWL, a data write current for generating a data write magnetic field in the direction along the hard axis is supplied to the write word line WWL. Thus, after aligning the magnetization directions in the hard magnetization axis regions 108 and 109 in one direction (upward in FIGS. 24A and 24B), data for generating a data write magnetic field in the direction along the easy magnetization axis A write current can be supplied to the bit line BL. As a result, as shown in FIGS. 24A and 24B, the easy magnetization axis region 107 is uniformly magnetized in one direction along the easy magnetization axis corresponding to the level of the write data, and the data is stored. A desirable magnetization state can be obtained.

  On the other hand, when the write word line WWL and the column selection line CSL are activated almost simultaneously or when the column selection line CSL is activated earlier than the write word line WWL, the free magnetic layer falls into a multistable state. As shown in FIGS. 24C, 24D, and 24E, the magnetization direction becomes an irregular intermediate state other than the desirable stable state. As a result, the magnetization direction of the free magnetic layer after data writing does not align with the assumed direction as shown in FIG. 24 (a) or (b). Therefore, in a memory cell in which data is written, a desired difference in electrical resistance corresponding to the difference in the stored data level cannot be secured, causing a malfunction and impairing the operational stability of the MRAM device.

  That is, the data write current for generating the magnetic field along the easy axis is supplied after the data write current for generating the magnetic field along the hard axis is supplied as shown in the second embodiment. By setting the data write current supply start timing in stages, data writing can be stably performed in consideration of the magnetic characteristics of the memory cell.

  Focusing on the bit line corresponding to the selected column, the data write operation is started after the data write operation is started by switching the activation timing of the column selection clock / CS between data read and data write. The time until the current flows (ts to t3 in FIG. 19) is set longer than the time from the start of the data read operation until the sense current flows (ts to t0 in FIG. 19). That is, the data write current supply timing is intentionally delayed at the time of data writing, while the supply of the sense current is started at the fastest timing at the time of data reading, thereby enabling stable data writing and high-speed data reading. Can be achieved.

  In FIG. 16, the configuration for supplying the data write current according to the second embodiment has been described based on the configuration according to the fourth modification of the first embodiment shown in FIG. The configuration according to the second embodiment can be applied without depending on the configuration of the peripheral circuit connected to the array and data reading.

[Embodiment 3]
In the third embodiment, a configuration for efficiently supplying a data write current will be described.

  FIG. 25 is a conceptual diagram showing a configuration according to the third embodiment of memory array 10 and its peripheral circuits.

  Referring to FIG. 25, in memory array 10 having memory cells MC arranged in n rows × m columns, read word lines RWL1, RWL2,... And write word lines WWL1, WWL2 correspond to the memory cell rows, respectively. ,... Are provided respectively. Bit lines BL1 to BLm and source lines SL1 to SLm are provided corresponding to the memory cell columns, respectively.

  The word line current control circuit 40 couples each write word line WWL to the ground voltage VSS in a region opposite to the word line driver 30 across the memory array 10.

  In a region adjacent to the memory array 10, a data bus pair DBP composed of data buses DB and / DB is provided along the same direction as the read word line RWL and the write word line WWL.

  Corresponding to each memory cell column, column selection lines CSL1 to CSLm, write column selection lines WCSL1 to WCSLm, column selection gates CSG1 to CSGm, and write column selection gates WCSG1 to WCSGm are arranged for executing column selection.

  Column selection gates CSG1 to CSGm and write column selection gates WCSG1 to WCSGm are arranged in regions opposite to each other with memory array 10 interposed therebetween.

  In the following, when the write column selection line, the column selection gate, and the write column selection gate are collectively expressed, they are represented using the symbols WCSL, CSG, and WCSG, respectively, and a specific write column selection line, column selection When a gate and a write column selection gate are shown, a suffix is added to these symbols, and they are expressed as WCSL1, CSG1, and WCSG1.

  At the time of data writing, column decoder 25 sets each of column selection lines CSL1 to CSLm and write column selection lines WCSL1 to WCSLm to H level according to the decoding result of column address CA, that is, the column selection result. Activate. At the time of data reading, one of column selection lines CSL1 to CSLm is activated according to the column selection result. That is, at the time of data reading, regardless of the column selection result, each of write column selection lines WCSL1 to WCSLm is maintained in an inactive state (L level).

  When corresponding column selection line CSL is activated, column selection gate CSG couples corresponding bit line BL and source line SL to data buses DB and / DB. As a result, data buses DB and / DB are electrically coupled to bit line BL and source line SL corresponding to the selected column, respectively.

  Write column select gate WCSG electrically couples one end of corresponding bit line BL and source line SL when corresponding write column select line WCSL is activated.

  At the time of data writing, word line driver 30 activates write word line WWL corresponding to the selected row and allows a data write current to flow. Further, data write circuit 51w sets data buses DB and / DB to one of ground voltage VSS and power supply voltage VDD in order to supply a data write current.

  In the selected column, bit line BL and source line SL are coupled to data buses DB and / DB by column selection gate CSG, and one end of bit line BL and source line SL are coupled to each other by write column selection gate WCSG. The

  As a result, a reciprocal current path of data write circuit 51w to data bus DB to bit line BL to write column selection gate WCSG to source line SL to data bus / DB to data write circuit 51w is formed to correspond to the selected column. A data write current ± Iw in a direction corresponding to the write data level can be supplied to the bit line to be performed.

  As described above, during data writing, currents in opposite directions flow in the bit line BL and the source line SL corresponding to the selected column, but the magnetic fields generated by the currents flowing in the bit line BL and the source line SL are respectively In the magnetic tunnel junction MTJ, the arrangement of the bit line BL and the source line SL is considered so as to be in the same direction.

FIG. 26 is a structural diagram showing the arrangement of the bit lines and source lines shown in FIG.
Referring to FIG. 26, access transistor ATR is formed in p type region PAR on semiconductor main substrate SUB. Access transistor ATR has source / drain regions 110 and 120 which are n-type regions, and a gate 130. Source / drain region 110 is coupled to source line SL formed in first metal interconnection layer M1.

  The bit line BL is formed in the second metal wiring layer M2, and is coupled to the magnetic tunnel junction MTJ. The write word line WWL is formed in the third metal wiring layer M3. The write word line WWL and the bit line BL need to pass a data write current for generating a magnetic field having a magnitude greater than a predetermined value during data writing. Therefore, the bit line BL and the write word line WWL are formed using metal wiring.

  On the other hand, the read word line RWL is provided to control the gate voltage of the access transistor ATR, and it is not necessary to actively flow a current. Therefore, from the viewpoint of increasing the degree of integration, the read word line RWL is formed using a polysilicon layer, a polycide structure, or the like in the same wiring layer as the gate 130 without newly providing an independent metal wiring layer.

  Source / drain region 120 of access transistor ATR is electrically coupled to magnetic tunnel junction MTJ through metal film 150 formed in the contact hole, first metal interconnection layer M1, and barrier metal 140. The barrier metal 140 is a cushioning material provided to electrically couple the magnetic tunnel junction MTJ and the metal wiring.

  As described above, the bit line BL and the source line SL are formed using different metal wiring layers so as to sandwich the magnetic tunnel junction MTJ in the vertical direction. Therefore, at the time of data writing, magnetic fields generated in the magnetic tunnel junction MTJ due to currents in opposite directions flowing through the bit line BL and the source line SL act in a mutually reinforcing direction. Thereby, the data write current flowing through bit line BL can be reduced during data writing. As a result, it is possible to reduce the power consumption during data writing, improve the reliability by reducing the bit line current density, and suppress the magnetic field noise for the adjacent cells.

  Referring again to FIG. 25, data read circuit 54r includes a precharge transistor 59a and a drive transistor 59b provided corresponding to data bus / DB in addition to data read circuit 51r provided corresponding to data bus DB. And have.

  Since the configuration of data read circuit 51r is as shown in FIG. 3, detailed description will not be repeated. Data read circuit 51r precharges data bus DB to power supply voltage VDD before data read. Data bus / DB is also precharged to power supply voltage VDD by precharge transistor 59a at the same timing as data bus DB. Similarly, each bit line BL is also precharged to the power supply voltage VDD before data reading.

  At the time of data reading, the precharge transistor 59a is turned off, while the drive transistor 59b is turned on in response to the control signal RE. In addition, each write column selection gate WCSG is turned off.

  When data buses DB and / DB are coupled to bit line BL and source line SL of the selected column by column select gate CSG corresponding to the selected column, source line SL is driven to ground voltage VSS, and the selected memory cell is selected. A voltage change similar to that shown in FIG. 4 occurs in the data bus DB coupled to the. As a result, data reading similar to that of the first embodiment can be executed.

  Note that the precharge voltage of the data bus DB can be set to the ground voltage VSS, and at the time of data reading, the bit line BL and the source line SL of the selected column can be driven to the power supply voltage VDD to execute data reading. In this case, in data read circuit 54r, data read circuit 52r shown in FIG. 6 is arranged in place of data read circuit 51r, and precharge transistor 59a is arranged between ground voltage VSS and data bus / DB. Further, the drive transistor 59b may be disposed between the power supply voltage VDD and the data bus / DB. In this case, it is desirable to use N-type and P-type MOS transistors for the precharge transistor 59a and the drive transistor 59b.

[Modification 1 of Embodiment 3]
FIG. 27 is a conceptual diagram showing a configuration according to the first modification of the third embodiment of the memory array 10 and its peripheral circuits.

  Referring to FIG. 27, in memory array 10 having memory cells MC arranged in n rows × m columns, read word line RWL, write word line WWL, and source line SL are provided corresponding to each memory cell row. It is done. A bit line BL is provided corresponding to each memory cell column.

  In FIG. 27, the write word line WWL1, the read word line RWL1, the source line SL1, and the bit lines BL1, BL2, and BLm corresponding to the first row and the first, second, and m columns correspond to these. Some memory cells are typically shown.

  Each source line SL is coupled to the ground voltage VSS at one end on the word line driver 30 side. The other end of each source line SL is electrically coupled to a write word line WWL corresponding to the same row in a region opposite to the word line driver 30 across the memory array 10. Further, the arrangement of the word line current control circuit 40 for coupling each write word line WWL to the ground voltage VSS in the region opposite to the word line driver 30 across the memory array 10 is omitted.

  At the time of data writing, word line driver 30 activates write word line WWL corresponding to the selected row to H level (power supply voltage VDD). Therefore, in the selected row, a round-trip current path of word line driver 30 to write word line WWL to coupling portion (opposite side of word line driver 30) to source line SL to ground voltage VSS (word line driver 30 side) is formed. A data write current Ip in a fixed direction is supplied to the write word line WWL.

  As described above, in data writing, currents in opposite directions flow through write word line WWL and source line SL corresponding to the selected row, but are generated by currents flowing through write word line WWLL and source line SL, respectively. The arrangement of the write word line WWL and the source line SL is considered so that the magnetic field is in the same direction at the magnetic tunnel junction MTJ.

  FIG. 28 is a structural diagram showing the arrangement of the write word lines and source lines shown in FIG.

  Referring to FIG. 28, access transistor ATR, magnetic tunnel junction MTJ, source line SL, bit line BL, write word line WWL, and read word line RWL are arranged similarly to FIG. Therefore, the write word line WWL and the source line SL are formed using different metal wiring layers so as to sandwich the magnetic tunnel junction MTJ in the vertical direction.

  As a result, at the time of data writing, magnetic fields generated in the magnetic tunnel junction MTJ due to currents in opposite directions flowing through the write word line WWL and the source line SL act in a mutually reinforcing direction. Thereby, the data write current flowing through the write word line WWL can be reduced during data writing. As a result, it is possible to reduce power consumption during data writing, improve reliability by reducing the write word line current density, and suppress magnetic field noise on adjacent cells.

  Referring again to FIG. 27, data buses DB and / DB are provided along the same direction as read word line RWL and write word line WWL in regions opposite to each other across memory array 10.

  Column select gate CSG is arranged between data bus DB and each of bit lines BL. Write column select gate WCSG is arranged between data bus / DB and each bit line BL. Column selection gate CSG and write column selection gate WCSG are turned on in response to activation of corresponding column selection line CSL and write column selection line WCSL, respectively.

  In data writing, bit line BL in the selected column is electrically coupled between data buses DB and / DB. Data write circuit 51w sets data buses DB and / DB to one of ground voltage VSS and power supply voltage VDD to supply a data write current. As a result, a data write current ± Iw in a direction corresponding to the write data level can be supplied to the bit line corresponding to the selected column.

  Data read circuit 55r generates read data DOUT based on the voltage change of data bus DB.

FIG. 29 is a circuit diagram showing a configuration of data read circuit 55r.
Referring to FIG. 29, data read circuit 55r operates in response to control signal RE activated at the time of data reading.

  Data read circuit 55r receives power supply voltage VDD and is electrically coupled between current sources 161 and 162 for supplying a constant current to nodes Ns1 and Ns2, respectively, and node Ns1 and data bus DB. Amplifies the voltage level difference between MOS transistor 163, N-type MOS transistor 164 and resistor 168, and nodes Ns1 and Ns2 coupled in series between node Ns2 and ground voltage VSS, and outputs read data DOUT And an amplifier 165.

  A predetermined voltage Vr is applied to the gates of the transistors 163 and 164. The amount of current supplied to current sources 161 and 162 and predetermined voltage Vr are set according to the design value of sense current Is. Resistors 166 and 167 are provided to pull down the nodes Ns1 and Ns2 to the ground voltage VSS.

  With such a configuration, data read circuit 55r supplies a constant sense current Is to data bus DB during data read. At the time of data read, each write column select gate WCSG is turned off, so that data read circuit 55r, data bus DB, column select gate CSG, bit line formed between data read circuit 55r and ground voltage VSS are provided. A sense current Is is passed through a current path of BL, selected memory cell, source line SL, and ground voltage VSS.

  In response, the voltage change of the bit line BL generated according to the storage data level of the selected memory cell can be transmitted to the node Ns1. The reference voltage VREF can be generated at the node Ns2 by designing the electric resistance value Rref of the resistor 168 in the same manner as the dummy resistor MTJd shown in FIG.

  Therefore, data read circuit 55r can read the stored data level of the selected memory cell by amplifying the voltage difference between nodes Ns1 and Ns2.

[Modification 2 of Embodiment 3]
FIG. 30 is a conceptual diagram showing a configuration according to the second modification of the third embodiment of the memory array 10 and its peripheral circuits.

  Referring to FIG. 30, in the configuration according to the second modification of the third embodiment, write word line WWL also serves as the function of source line SL during data reading. Each of write word lines WWL is coupled to ground voltage VSS by word line current control circuit 40. Further, at the time of data reading, word line driver 30 couples one end side of each write word line WWL to ground voltage VSS and maintains their inactive state (L level).

  Therefore, even if the arrangement of source line SL is omitted, memory cells belonging to the selected row are electrically coupled between each of bit lines BL1 to BLm and ground voltage VSS to perform data reading similar to FIG. Can be executed. As a result, by reducing the number of wirings, the device can be reduced in size and the manufacturing process can be simplified.

  At the time of data writing, the word line driver 30 is activated by coupling one end side of the write word line WWL to the power supply voltage VDD as in the case of FIG. A data write current flows in the direction from the word line driver 30 toward the word line current control circuit 40 through the activated write word line WWL.

  The data write current is supplied to bit line BL by data write circuit 51w, column select gate CSG, write column select gate WCSG and data buses DB, / DB arranged in the same manner as in FIG. This is executed in the same manner as in the first modification.

[Modification 3 of Embodiment 3]
FIG. 31 is a conceptual diagram showing a configuration according to the third modification of the third embodiment of the memory array 10 and its peripheral circuits.

  Referring to FIG. 31, in the configuration according to the third modification of the third embodiment, in addition to the configuration shown in FIG. 30, a space between a plurality of other write word lines corresponding to each write word line WWL. A write word line coupling switch coupled to is arranged.

  In the configuration shown in FIG. 31, as an example, a write word line coupling switch is arranged between two adjacent write word lines WWL. That is, for the write word line WWLj in the j-th row, which is typically exemplified, the write word line coupling switches 210-j and 210- (j + 1) between the adjacent write word lines WWLj−1 and WWLj + 1. ) Is arranged.

  Furthermore, the arrangement of the word line current control circuit 40 for coupling each write word line WWL to the ground voltage VSS is omitted in a region opposite to the word line driver 30 across the memory array 10.

  Each write word line coupling switch is turned on when either one of the two write word lines coupled to itself corresponds to the selected row. For example, the write word line coupling switch 210-j is turned on when the output of the logic gate 212-j becomes H level. Logic gate 212-j is activated between write row decode signals WRDj-1 and WRDj that are activated (H level), respectively, when the (j-1) th and jth rows are selected during data writing. The OR logic operation result is output.

  As a result, write word line coupling switch 210-j electrically couples write word lines WWLj and WWLj-1 when the (j-1) th or jth row is selected during data writing. . Similar write word line coupling switches are arranged between two adjacent write word lines WWL.

  Therefore, for example, when the j-th row is selected during data writing, write word line WWLj is electrically coupled to write word lines WWLj−1 and WWLj + 1. Write word line WWLj corresponding to the selected row is activated by word line driver 30, and one end thereof is coupled to power supply voltage VDD. On the other hand, write word lines WWLj−1 and WWLj + 1 correspond to non-selected rows, so that one end side of each is coupled to ground voltage VSS by word line driver 30. .

  Therefore, a return path for data write current Ip flowing through write word line WWLj in the selected row can be formed using write word lines WWLj−1 and WWLj + 1 in the unselected row. That is, a return current of −Ip / 2 flows through each of the write word lines WWLj−1 and WWLj + 1 in the non-selected row.

  In this manner, the write word line corresponding to the selected row and the plurality of word lines corresponding to the non-selected row are electrically coupled in the region opposite to the word line driver 30 with the memory array 10 interposed therebetween. Thus, a return path for the data write current Ip is formed. At this time, the magnetic field applied to the selected memory cell by the write word line of the non-selected row is similar to the magnetic field generated by the source line SL in FIG. 27, and the magnetic field applied to the selected memory cell by the write word line of the selected row. Reinforce each other. On the contrary, in the memory cells in the non-selected rows, the magnetic fields applied by the write word lines corresponding to the selected row and the non-selected row cancel each other.

  As a result, the data write current flowing through write word line WWL can be reduced during data writing. As a result, it is possible to reduce power consumption during data writing, improve reliability by reducing the write word line current density, and suppress magnetic field noise on adjacent cells.

  Further, by using a plurality of non-selected write word lines WWL to form a return path for the data write current Ip, the return current flowing through each of the write word lines WWL in the non-selected row is changed to the corresponding non-selected row. The memory cell can be suppressed to a level at which erroneous data writing is not performed.

  In FIG. 31, the configuration in which the write word line coupling switch is coupled to each of the two adjacent write word lines for each write word line WWL is illustrated. , And any other write word line WWL.

[Modification 4 of Embodiment 3]
FIG. 32 is a conceptual diagram showing a configuration according to the fourth modification of the third embodiment of the memory array 10 and its peripheral circuits.

  Referring to FIG. 32, the configuration according to the fourth modification of the third embodiment shows a configuration in which write word line WWL and source line SL are independently arranged. Source line SL is arranged corresponding to each memory cell row, and one end on the side of word line driver 30 is coupled to ground voltage VSS.

  Further, the write word line coupling switch is arranged between at least one source line SL belonging to another row corresponding to each write word line WWL. The write word line coupling switch is arranged in a region opposite to the word line driver 30 across the memory array 10.

  In FIG. 32, as an example, a write word line coupling switch is arranged between two source lines SL corresponding to two adjacent rows corresponding to each write word line WWL. That is, for the j-th write word line WWLj as a representative example, the write word lines electrically coupled between the source lines SLj−1 and SLj + 1 of the adjacent memory cell rows, respectively. Coupling switches 220-j and 221-j are arranged.

  Furthermore, the arrangement of the word line current control circuit 40 for coupling each write word line WWL to the ground voltage VSS is omitted in a region opposite to the word line driver 30 across the memory array 10.

  Each write word line coupling switch is turned on when the corresponding write word line WWL is selected. For example, write word line coupling switches 220-j and 221-j are turned on in response to activation of write row decode signal WRDj. A similar write word line coupling switch is arranged for each of the other write word lines WWL.

  Therefore, for example, when the j-th row is selected at the time of data writing, write word line WWLj is electrically coupled to source lines SLj−1 and SLj + 1. Write word line WWLj corresponding to the selected row is activated by word line driver 30, and one end thereof is coupled to power supply voltage VDD. On the other hand, one end of source lines SLj−1 and SLj + 1 on the side of word line driver 30 is coupled to ground voltage VSS.

  Therefore, a return path for data write current Ip flowing through write word line WWLj of the selected row can be formed using source lines SLj−1 and SLj + 1 corresponding to other memory cell rows. That is, a return current of −Ip / 2 flows through each of source lines SLj−1 and SLj + 1.

  In this way, the write word line corresponding to the selected row and the plurality of source lines corresponding to the non-selected row are electrically coupled in the region opposite to the word line driver 30 across the memory array 10. Thus, a return path for the data write current Ip is formed. At this time, the magnetic field applied to the selected memory cell by the source line corresponding to the unselected row strengthens the magnetic field applied to the selected memory cell by the write word line of the selected row. On the contrary, in the memory cells of the non-selected row, the magnetic fields applied by the write word line of the selected row and the source line of the non-selected row cancel each other.

  As a result, similar to the third modification of the third embodiment, it is possible to reduce the power consumption during data writing, improve the reliability by reducing the write word line current density, and suppress the magnetic field noise on the adjacent cells. .

  Also, by using a plurality of source lines SL corresponding to other memory cell rows to form a return path for data write current Ip, the return current flowing through each of the source lines SL is changed to the corresponding non-selected row. It can be suppressed to a level that prevents erroneous data writing to the memory cell.

  In FIG. 32, a configuration in which a write word line coupling switch is coupled to each write word line WWL between each of the adjacent source lines is illustrated. It can be placed between any source line SL.

[Embodiment 4]
In the fourth embodiment, a configuration for reducing power consumption in data reading using a dummy memory cell will be described.

  FIG. 33 is a conceptual diagram showing a configuration according to the fourth embodiment of the memory array 10 and its peripheral circuits. FIG. 33 mainly shows a configuration related to data reading.

  Referring to FIG. 33, in memory array 10, read word line RWL and write word line WWL are arranged corresponding to each memory cell row, and bit lines BL and / BL are arranged corresponding to each memory cell column. Be placed. Each memory cell MC is electrically coupled between the corresponding bit line BL and the ground voltage VSS in response to the access transistor ATR being turned on when the corresponding read word line RWL is activated.

  FIG. 33 shows write word lines WWL1, WWL2, read word lines RWL1, RWL2 and bit lines BL1, BL2, BL3, corresponding to the first and second rows and the first, second, third and m columns. BLm and some of the memory cells corresponding to them are typically shown.

  Data buses DB and / DB constituting a data bus pair are arranged in the region adjacent to memory array 10 along the same direction as read word line RWL and write word line WWL.

  Corresponding to the memory cell columns, column selection gates CSG1 to CSGm are arranged, respectively. Each column select gate CSG is turned on in response to activation of corresponding column select line CSL to electrically couple corresponding bit lines BL and / BL and data buses DB and / DB, respectively. As a result, at the time of data reading, the selected memory cell is electrically coupled between data bus DB and ground voltage VSS.

  Further, m dummy memory cells DMC respectively corresponding to the memory cell columns are arranged. Since the configuration of each dummy memory cell DMC is the same as that of FIG. 8, detailed description will not be repeated. In response to activation of the corresponding column selection line CSL, the dummy access transistor ATRd is turned on. The dummy memory cell in which dummy access transistor ATRd is turned on is activated and electrically coupled between data bus / DB and ground voltage VSS.

  Therefore, at the time of data reading, only dummy memory cell DMC corresponding to the selected column is activated. As a result, since no charge / discharge current is generated in the bit line / BL corresponding to the non-selected column, the power consumption of the data read operation can be reduced.

  Data read circuit 56r detects a voltage difference between data bus DB electrically coupled to the selected memory cell and data bus / DB electrically coupled to dummy memory cell DMC, and generates read data DOUT.

FIG. 34 is a circuit diagram showing a configuration of data read circuit 56r.
Referring to FIG. 34, data read circuit 56r further includes drive transistors DTa and DTb in addition to the configuration of data read circuit 53r shown in FIG. Since the configuration of other parts is similar to that of data read circuit 56r, detailed description will not be repeated.

  Drive transistors DTa and DTb are electrically coupled between power supply voltage VDD and data buses DB and / DB, respectively. Drive transistors DTa and DTb are turned on / off in response to control signal / RE activated to L level during data reading. Therefore, at the time of data reading, each of data buses DB and / DB is driven by power supply voltage VDD.

FIG. 35 is a timing chart illustrating a data read operation according to the fourth embodiment.
Referring to FIG. 35, before data reading, bit lines BL, / BL and data buses DB, / DB are precharged to ground voltage VSS. In each memory cell, the source side voltage of the access transistor ATR is fixed to the ground voltage VSS.

  At time t0, a data read operation is started, and read word line RWLi and column select line CSLj corresponding to the selected memory cell are activated. In response, dummy memory cells corresponding to the selected memory cell and the selected column are electrically coupled between data buses DB and / DB and ground voltage VSS, respectively.

  Therefore, a sense current is generated between data buses DB and / DB driven to power supply voltage VDD by data read circuit 56r and ground voltage VSS electrically coupled via selected memory cell and dummy memory cell DMC, respectively. (Data read current) flows.

  As a result, a voltage change corresponding to the electric resistance value of the electrically coupled memory cell or dummy memory cell occurs in the bit lines BL and / BL and the data buses DB and / DB. Therefore, in the same manner as in the second modification of the first embodiment, the voltage difference between the data buses DB and / DB is detected and amplified in response to the trigger pulse φr at a predetermined time t1, thereby Stored data can be read.

  Therefore, data reading with a large signal margin can be executed while suppressing power consumption in the dummy memory cell. Since the bit lines BL and / BL and the data buses DB and / DB are driven by the power supply voltage, the voltages at which the data buses DB and / DB converge are different from each other. Therefore, comparing these converged voltages, that is, if the activation timing of trigger pulse φr is set after the voltage of data buses DB and / DB is converged, data reading can be further stabilized.

  In order to accurately perform data reading using dummy memory cell DMC, a first current path including a selected memory cell formed between data reading circuit 56r and ground voltage VSS, dummy memory It is necessary to design the data buses DB and / DB and the bit lines BL and / BL so that the electric resistance value with the second current path including the cell DMC becomes the same value.

[Modification 1 of Embodiment 4]
In the first modification of the fourth embodiment, the arrangement of dummy memory cells in the folded bit line configuration is shown.

  FIG. 36 is a conceptual diagram showing a configuration according to the first modification of the fourth embodiment of the memory array 10 and its peripheral circuits.

  Referring to FIG. 36, in the configuration according to the first modification of the fourth embodiment, each of bit lines BL and / BL is arranged based on the folded bit line configuration. In each memory cell column, memory cell MC is provided between one of bit lines BL and / BL and ground voltage VSS every other row. Specifically, each memory cell is provided between the bit line BL and the ground voltage VSS in the odd-numbered row, and is provided between the bit line / BL and the ground voltage VSS in the even-numbered row.

  Two dummy memory cells DMC are arranged for each memory cell column. In each memory cell column, two dummy memory cells are electrically coupled between bit lines BL and / BL and ground voltage VSS.

  Corresponding to each memory cell column, column select gate CSG which is turned on / off in response to column select line CSL is arranged, and bit lines BL and / BL corresponding to the selected column are electrically connected to data buses DB and / DB. Combined with

  Further, dummy column selection gates CSGd1 to CSGdm are arranged corresponding to the memory cell columns, respectively. The dummy column selection gate CSGd1 outputs a logic gate LG1 that outputs an AND logic operation result of the voltage level of the control signal RA0 and the column selection line CSL1, and outputs an AND logic operation result of the voltage level of the control signal / RA0 and the column selection line CSL1. Logic gate LG2.

  Control signal RA0 is set to H level when an odd-numbered row is selected, and is set to L-level when an even-numbered row is selected. Control signal / RA0 has a signal level opposite to that of control signal RA0, and is set to H level when an even-numbered row is selected.

  Dummy access transistor ATRd in the dummy memory cell corresponding to bit line / BL1 is turned on when the output of logic gate LG1 is set to H level. On the other hand, the dummy access transistor ATRd in the dummy memory cell corresponding to the bit line BL1 is turned on when the output of the logic gate LG2 is set to the H level.

The other dummy column selection gates CSGd2 to CSGdm have the same configuration.
Each of dummy column selection gates CSGd1 to CSGdm is a dummy provided between corresponding bit line / BL and ground voltage VSS when an odd column is selected when a corresponding memory cell column is selected. When the memory cell is activated and the even column is selected, the dummy memory cell provided between the corresponding bit line BL and the ground voltage VSS is activated. Therefore, the dummy memory cell is activated only in the selected memory cell column.

  As a result, when an odd row is selected, the selected memory cell is electrically coupled between the data bus DB and the ground voltage VSS, while being selected between the data bus / DB and the ground voltage VSS. Dummy memory cell DMC is electrically coupled.

  When an even row is selected, a selected memory cell is electrically coupled between data bus / DB and ground voltage VSS, while a dummy selected between data bus DB and ground voltage VSS is selected. Memory cell DMC is electrically coupled. Data read circuit 56r generates read data DOUT based on the voltages of data buses DB and / DB as in the fourth embodiment.

  With such a configuration, data reading based on a folded bit line configuration with high electrical noise resistance can be executed while suppressing power consumption by the dummy memory cells.

  In the fourth embodiment and its modified example 1, as in the first embodiment, after data buses DB and / DB are precharged with power supply voltage VDD, data buses DB and / DB are set in the data read operation. It is also possible to execute data reading by disconnecting from the power supply voltage VDD. In this case, in data read circuit 51r shown in FIG. 3, a data read circuit having a configuration in which precharge transistor PTa and transfer gate TGa corresponding to data bus DB are similarly arranged for data bus / DB. May be applied in place of the data read circuit 56r in FIGS. In such a configuration, at the time of data reading, the voltage change rate of the data bus DB shown in FIG. 4 when the storage data level is H level and the data bus when the storage data level is L level shown in FIG. The voltage of the data bus / DB electrically coupled to the dummy memory cell DMC changes at a speed intermediate to the voltage change speed of DB. Therefore, data reading similar to that of the first embodiment can be executed by comparing the voltages of data buses DB and / DB at a predetermined timing.

[Modification 2 of Embodiment 4]
In the second modification of the fourth embodiment, the arrangement of dummy memory cells in the open bit line configuration is shown.

  FIG. 37 is a conceptual diagram showing a configuration according to the second modification of the fourth embodiment of the memory array 10 and its peripheral circuits.

  Referring to FIG. 37, memory array 10 is divided into two memory mats MTa and MTb, similarly to the configuration of FIG. In memory mat MTa, read word lines RWL1a, RWL2a,... And write word lines WWL1a, WWL2a,. Similarly, in memory mat MTb, read word lines RWL1b, RWL2b,... And write word lines WWL1b, WWL2b,. Each memory cell MC is electrically coupled between the corresponding bit line BL and the ground voltage VSS in response to the access transistor ATR being turned on when the corresponding read word line RWL is activated.

  In one of memory mats MTa and MTb, one selected row to which the selected memory cell belongs is specified, and read word line RWL corresponding to the selected row is activated during data reading. On the other hand, column selection line CSL is shared by memory mats MTa and MTb, and one column selection line CSL corresponding to the selected column is selectively activated to H level.

  When the selected memory cell belongs to memory mat MTa, control signal RAx is set to H level and control signal / RAx is set to L level. On the other hand, when the selected memory cell belongs to memory mat MTb, control signal / RAx is set to H level.

  In each of memory mats MTa and MTb, the same number of bit lines are arranged corresponding to each of the memory cell columns based on a so-called open bit line configuration. Also in FIG. 37, the bit lines arranged in the memory mat MTa are represented as BL1, BL2,..., And the bit lines arranged in the memory mat MTb are represented as / BL1, / BL2,.

  In each of memory mats MTa and MTb, a plurality of dummy memory cells DMC are arranged so as to form one dummy row. The plurality of dummy memory cells arranged in the memory mat MTa are provided between the bit lines BL1 to BLm and the ground voltage VSS, respectively. Similarly, the plurality of dummy memory cells arranged in memory mat MTb are provided between bit lines / BL1 to / BLm and ground voltage VSS, respectively.

  In memory mat MTa, column selection gates CSG1a, CSG2a,... That are turned on / off in response to corresponding column selection line CSL are arranged between data bus DB and bit lines BL1, BL2,. Is done. Similarly, in memory mat MTb, column select gates CSG1b, CSG2b, which are turned on / off in response to corresponding column select line CSL between data bus / DB and bit lines / BL1, / BL2,. Are arranged respectively.

  Therefore, bit lines BL (memory mat MTa) and / BL (memory mat MTb) corresponding to the selected column are electrically coupled to data buses DB and / DB, respectively.

  Further, dummy column selection gates CSGd1a, CSGd2a,... Are arranged corresponding to the memory cell columns in memory mat MTa, and dummy column selection gates CSGd1b, CSGd2b corresponding to the memory cell columns in memory mat MTb, respectively. Are arranged.

  The dummy column selection gate CSGd1a is configured by a logic gate that outputs an AND logic operation result of the voltage level of the corresponding column selection line CSL1 and control signal RAx. The dummy column selection gates CSGd2a,... Arranged corresponding to the other memory cell columns are similarly configured.

  On the other hand, dummy column selection gate CSGd1b is constituted by a corresponding column selection line CSL1 and a logic gate that outputs an AND logic operation result of the voltage level of control signal / RAx. The dummy column selection gates CSGd2b,... Arranged corresponding to the other memory cell columns are similarly configured.

  Each of the dummy column selection gates corresponding to the memory mat MTa is connected between the corresponding bit line BL and the ground voltage VSS when the corresponding memory cell column is selected and the memory mat MTa is selected. The provided dummy memory cell is activated.

  Similarly, each of dummy column selection gates corresponding to memory mat MTb has a corresponding bit line / BL and ground voltage VSS when memory mat MTb is selected when the corresponding memory cell column is selected. The dummy memory cell provided between the two is activated. Therefore, only the dummy memory cell corresponding to the selected memory cell column of the selected memory mat is activated.

  As a result, when the memory mat MTa is selected, the selected memory cell is electrically coupled between the data bus DB and the ground voltage VSS, while being selected between the data bus / DB and the ground voltage VSS. The dummy memory cells DMC are electrically coupled.

  When memory mat MTb is selected, the selected memory cell is electrically coupled between data bus / DB and ground voltage VSS, while selected between data bus DB and ground voltage VSS. Dummy memory cell DMC is electrically coupled. Data read circuit 56r generates read data DOUT based on the voltages of data buses DB and / DB as in the fourth embodiment.

  With such a configuration, data reading based on the open bit line configuration can be performed while suppressing power consumption in the dummy memory cell.

[Modification 3 of Embodiment 4]
In the third modification of the fourth embodiment, a configuration in which the second modification of the fourth embodiment and the first embodiment are combined is shown.

  FIG. 38 is a conceptual diagram showing a configuration according to the third modification of the fourth embodiment of the memory array 10 and its peripheral circuits.

  Referring to FIG. 38, in the configuration according to the third modification of the fourth embodiment, the source line corresponding to each memory cell column in each of memory mats MTa and MTb is compared with the configuration shown in FIG. The difference is that SL is arranged. Each memory cell MC and dummy memory cell DMC are provided between corresponding bit line BL and source line SL.

  Further, corresponding to each bit line BL and each source line SL, bit line drive gate BCSGb and source line drive gate SCSGb similar to those of modification 1 of the first embodiment are arranged, respectively. Correspondingly, data read circuit 53r shown in FIG. 9 is provided in place of data read circuit 56r.

  By adopting such a configuration, in addition to the effect enjoyed by the configuration according to the second modification of the fourth embodiment, it is possible to reduce the power consumption and improve the data read margin described in the first embodiment. .

  Instead of the bit line drive gate BCSGb and the source line drive gate SCSGb, the bit line drive gate BCSGa and the source line drive gate SCSGa shown in FIG. 2 can be arranged.

  In addition, the source line SL, the bit line selection gate BCSGa or BCSGb, and the source line selection gate SCSGa or SCSGb are further arranged in the configuration of the fourth embodiment and the modification 1 thereof, as in the first embodiment. It is also possible to further enjoy the effects of.

  In the configuration in which source line SL is driven to ground voltage VSS at the time of data reading as shown in the first embodiment, data bus DB is driven to power supply voltage VDD, and a sense current (data read current) is positively applied. It is also possible to perform data reading such as to flow through.

  Similarly, in the configuration in which source line SL is driven to power supply voltage VDD at the time of data reading, as shown in the modified example of the first embodiment and the second, third, fourth, and modified examples thereof, the data bus It is also possible to perform data reading in which DB is driven to the ground voltage VSS and a sense current (data read current) is allowed to flow actively.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  10 memory array, 20 row decoder, 25 column decoder, 30 word line driver, 40 word line current control circuit, 51w data write circuit, 51r, 52r, 53r, 54r, 55r, 56r data read circuit, 62 bit line coupling transistor , 101 Antiferromagnetic layer, 102 Fixed magnetic layer, 103 Free magnetic layer, 104 Tunnel barrier, 105 Contact electrode, 107 Easy axis region, 108, 109 Difficult axis region, 200 Column selection clock generation circuit, 210, 220 , 221 Write word line coupling switch, ATR access transistor, ATRd dummy access transistor, BCSGGa, BCSGb, / BCSGb bit line selection gate, BCSGd dummy bit line selection gate, BL, / BL bit line, BLP bit Line pair, DB, / DB data bus, DMC dummy memory cell, DRWL dummy read word line, DSL dummy source line, Ip, ± Iw data write current, Is sense current, MC memory cell, MTJ magnetic tunnel junction, MTJd dummy resistor, RWL read word line, SCSGa, SCSGb source line drive gate, SCSGbd dummy source line select gate, SL, / SL source line, WWL write word line.

Claims (3)

Comprising a memory cell for performing data storage;
The memory cell is
Including a magnetic storage unit whose electrical resistance value changes according to the level of stored data,
The magnetic storage unit
A first magnetic layer that retains a fixed predetermined magnetization direction;
Written in accordance with a combination of a first data write magnetic field for applying a magnetic field along the hard axis direction and a second data write magnetic field for applying a magnetic field along the easy axis direction A second magnetic layer that retains the magnetization direction;
A first signal line for flowing a first data write current for generating the first data write magnetic field;
A second signal line for passing a second data write current for generating the second data write magnetic field;
The thin film magnetic memory device in which the supply of the first data write current is started prior to the supply of the second data write current during data writing. The second signal line allows a data read current to pass through the magnetic storage unit during data read,
The time at which the data read current starts to flow from the start of the data read operation in the second signal line is shorter than the time from the start of the data write operation to the start of the second data write current. Item 11. A thin film magnetic memory device according to Item 1. A third signal line electrically coupled to the second signal line via the memory cell during data reading;
A first signal line selector for controlling the voltage of the second signal line;
A second signal line selector for controlling the voltage of the third signal line,
The first signal line selection unit precharges the second signal line to a first voltage before the data reading, and at the time of the data reading, the first signal line selection unit connects the second signal line to the first signal line. Electrically disconnected from the voltage of
The second signal line selection unit includes:
A precharge unit for precharging the third signal line to a second voltage before the data reading;
2. The thin film magnetic memory device according to claim 1, further comprising a signal line driving unit for electrically coupling the third signal line with a third voltage during the data reading.

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