JP2011114222A - Semiconductor light-emitting device, semiconductor light-emitting device assembly, and method of manufacturing the semiconductor light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device having high mass production, capable of attaining a shape stabilizing and a cost reduction of a phosphor-content translucent resin layer wrapping a semiconductor light-emitting element. <P>SOLUTION: A semiconductor light-emitting device 1 is equipped with a substrate 2 having a major surface 4, and a semiconductor light-emitting element 10, arranged on the major surface 4. The semiconductor light-emitting device 1 also includes a sealing resin section 22 wrapping the semiconductor light-emitting element 10; a peripheral wall section 26, surrounding peripheries of the sealing resin section 22; and a connection part 34, connecting the sealing resin section 22 and the peripheral wall section 26 and is equipped with a first transparent resin section 20, provided on the major surface 4. The semiconductor light-emitting device 1 is also equipped with a second transparent resin section 40, which contains the phosphor and is formed inside the peripheral wall section 26 and wraps the sealing resin section 22; and a third transparent resin section 50 which wraps the second transparent resin section 40. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor light-emitting device and a method for manufacturing the same, and more particularly, to a surface-mounted semiconductor light-emitting device having a semiconductor light-emitting element mounted on the surface of a substrate, a semiconductor light-emitting device assembly including a plurality of the semiconductor light-emitting devices, The present invention relates to a method for manufacturing a light emitting device.

  Recently, a very bright white semiconductor light emitting device has been developed. A semiconductor light-emitting device using a semiconductor light-emitting element typified by an LED (Light Emitting Diode) chip has low power consumption and can achieve energy saving. Therefore, a liquid crystal backlight device, Widely used as a light source for lighting equipment and the like.

  A light source device such as a liquid crystal backlight device or a lighting device includes a plurality of white semiconductor light emitting devices arranged in a planar shape. From the viewpoint of uneven brightness in the surface, a light source that takes into consideration the light distribution characteristics such as a light source with a wide light distribution characteristic and a light source that condenses the light is required. Therefore, the blue semiconductor light-emitting element mounted on the substrate is sealed with a translucent sealing resin containing phosphors such as red and green phosphors, and the surface of the sealing body is processed into a lens shape or a dome shape. White semiconductor light-emitting devices that have been manufactured have been commercialized. In the white semiconductor light emitting device having the above configuration, the blue semiconductor light emitting element emits blue light, and the phosphor in the phosphor-containing translucent resin layer is excited by the blue light, and emits fluorescent light. White light is emitted by the mixed color of fluorescent light and blue light.

  As an example of a method for forming such a white semiconductor light-emitting device, for example, Patent Document 1 discloses a fluorescent filler intended to enable production of an optical element such as a light-emitting diode having improved light-emitting performance and reliability. And a method for forming the same. Patent Document 1 discloses an LED chip, a small dome-shaped droplet containing a mixture of fluorescent compound particles and epoxy formed around the LED chip, and a transparent material that does not include a phosphor covering the surface of the droplet. An LED element having an optical dome has been described as prior art.

  Patent Document 2 proposes a light-emitting device that is extremely thin and has good light extraction efficiency from a light-emitting surface and that can be adjusted in color in the manufacturing process. The light-emitting device described in Patent Literature 2 includes a resin that covers the light-emitting diode, and the resin includes a first transparent resin that includes a phosphor that includes many light-emitting diodes, and a second transparent resin that covers the first transparent resin. .

  Patent Document 3 proposes a method for forming a light emitting layer on a light emitting semiconductor device for the purpose of uniformly applying a phosphor-containing material to LEDs. The method described in Patent Document 3 includes a step of positioning a stencil on a substrate so that a light-emitting semiconductor device provided on the substrate is positioned in the opening of the stencil, and a stencil composition containing a light-emitting material. Depositing on the substrate, removing the stencil from the substrate, and curing the stencil composition to a solid state.

  Patent Document 4 discloses a method for manufacturing a light emitting device in which a light emitting element on a substrate is covered with a mold member. Patent Document 4 proposes a method in which a mold such as a dam sheet is previously installed in a package in which a light emitting element is arranged on a substrate, a mold member is injected into the mold, and the light emitting element is covered with the mold member. Yes.

JP 2003-286480 A JP 2007-158209 A JP 2002-185048 A JP 2009-54694 A

  The extraction of the fluorescent light to the outside is determined by the positional relationship between the position of the phosphor and the outer peripheral surface of the translucent resin layer not including the phosphor, and affects the light distribution characteristics of the white semiconductor light emitting device. Therefore, it is necessary to form the semiconductor light emitting device in such a shape that the phosphor-containing translucent resin layer can be produced within a certain degree of accuracy. Or it is necessary to manufacture a semiconductor light-emitting device using the manufacturing method which can produce a fluorescent substance containing translucent resin layer within a certain amount of precision.

  As a method for producing a phosphor-containing translucent resin, there is a method of forming by potting using a highly viscous resin by utilizing the thixotropic property of the resin. However, in this method, variation in the amount of phosphor in the resin during production affects the resin viscosity, so that the shape of the phosphor-containing translucent resin layer is not sufficiently stabilized. As another method, there is a method of stabilizing the shape of the resin by using a member for blocking the resin such as screen printing or a dam sheet. However, in this method, there is a limit to the size of the phosphor-containing translucent resin layer that can be produced, and there is a problem that the cost increases due to the use of a damming member.

  The present invention has been made in view of the above problems, and a main object thereof is a semiconductor light-emitting device in which a semiconductor light-emitting element is covered with a light-transmitting resin containing a phosphor, and the shape of the resin layer is stabilized. It is another object of the present invention to provide an apparatus that can achieve cost reduction and has high mass productivity.

  A semiconductor light emitting device according to the present invention includes a substrate having a main surface and a semiconductor light emitting element arranged on the main surface. The semiconductor light emitting device also includes a sealing resin portion that covers the semiconductor light emitting element, a peripheral wall portion that surrounds the periphery of the sealing resin portion, and a connection portion that connects the sealing resin portion and the peripheral wall portion on the main surface. Provided with a first transparent resin portion. The semiconductor light emitting device also includes a second transparent resin portion that includes a phosphor and is formed inside the peripheral wall portion and covers the sealing resin portion, and a third transparent resin portion that covers the second transparent resin portion. Prepare.

  Preferably, the first transparent resin part, the second transparent resin part, and the third transparent resin part have the same refractive index.

  Preferably, the third transparent resin portion further includes an outer peripheral surface that covers an outer peripheral side surface and an upper end portion of the peripheral wall portion of the sealing resin portion and forms a boundary with the atmosphere, and at least a part of the outer peripheral surface is spherical. Is formed.

  Preferably, the sealing resin portion has a top portion farthest from the main surface, and the peripheral wall portion has an upper end portion whose distance from the main surface is larger than the top portion over the entire periphery of the sealing resin portion.

Preferably, at least a part of the outer surface of the sealing resin portion is formed in a spherical shape.
Preferably, the semiconductor light emitting element includes a light emitting layer, and the connecting portion has a thickness smaller than a distance between the main surface and the light emitting layer in the thickness direction of the substrate.

Preferably, the connection portion has a thickness of 50 μm or more in the thickness direction of the substrate.
Preferably, the phosphor is dispersed substantially uniformly in the second transparent resin portion.

  Preferably, the second transparent resin portion has a phosphor layer having a relatively high phosphor content, and the phosphor layer is in surface contact with the sealing resin portion.

  Preferably, the first transparent resin portion and the third transparent resin portion have an axisymmetric shape sharing a symmetry axis.

  A semiconductor light emitting device assembly according to another aspect of the present invention includes a plurality of the semiconductor light emitting devices according to any one of the above. The first transparent resin portion of the semiconductor light emitting device has a structure integrated with the first transparent resin portion of another semiconductor light emitting device adjacent to the semiconductor light emitting device. The third transparent resin portion of the semiconductor light emitting device has an integral structure with the third transparent resin portion of another semiconductor light emitting device.

  A method for manufacturing a semiconductor light emitting device according to still another aspect of the present invention includes a step of preparing a substrate having a main surface and a step of disposing a semiconductor light emitting element on the main surface. The method also includes, on the main surface, a sealing resin portion that covers the semiconductor light emitting element, a peripheral wall portion that surrounds the periphery of the sealing resin portion, and a connection portion that connects the sealing resin portion and the peripheral wall portion. Forming a first transparent resin portion; The method also includes a step of forming a second transparent resin part including a phosphor so as to cover the sealing resin part inside the peripheral wall part, and a third transparent resin part covering the second transparent resin part. Forming a step.

  Preferably, the step of forming the first transparent resin portion includes a step of installing a mold on the main surface, a step of supplying a resin material to the internal space of the mold, and a step of curing the supplied resin material And a step of removing the mold.

  Preferably, the step of forming the second transparent resin portion includes a step of potting a resin material inside the peripheral wall portion, and a step of curing the potted resin material.

  Preferably, the step of forming the second transparent resin portion includes a step of precipitating the phosphor contained in the potted resin material.

  Preferably, the step of forming the third transparent resin portion includes a step of installing a mold that covers the sealing resin portion, a step of supplying a resin material to the inner space of the mold, and curing the supplied resin material. And a step of removing the mold.

  According to the present invention, the shape of the resin layer can be stabilized and the cost can be reduced, and a semiconductor light emitting device with high mass productivity can be provided.

It is sectional drawing of the semiconductor light-emitting device concerning this Embodiment. It is sectional drawing which expands and shows the semiconductor light emitting element vicinity shown in FIG. It is a cross-sectional schematic diagram which shows the structure of a 2nd transparent resin part. FIG. 4 is a plan view of a part of the semiconductor light emitting device shown in FIG. 3. FIG. 2 is a diagram showing a virtual spherical surface centered on an origin O in the semiconductor light emitting device shown in FIG. 1. FIG. 2 is a diagram schematically showing the semiconductor light emitting device shown in FIG. 1 on coordinates with an origin O as a center. It is a flowchart which shows the manufacturing process of a semiconductor light-emitting device. It is a flowchart which shows the detail of the process of forming a 1st transparent resin part. It is sectional drawing which shows the state which installed the metal mold | die on the main surface of a board | substrate. It is sectional drawing which shows the state with which the resin material was filled inside the metal mold | die. It is a flowchart which shows the detail of the process of forming a 2nd transparent resin part. It is sectional drawing which shows the state by which the potting apparatus was prepared. It is sectional drawing which shows the state with which the resin material which forms a 2nd transparent resin part was filled. It is a flowchart which shows the detail of the process of forming a 3rd transparent resin part. It is sectional drawing which shows the state which installed the metal mold | die which covers a sealing resin part. It is sectional drawing which shows the state with which the resin material was filled inside the metal mold | die. It is sectional drawing of the semiconductor light-emitting device assembly produced by the manufacturing method of this Embodiment.

  Embodiments of the present invention will be described below with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

  FIG. 1 is a cross-sectional view of the semiconductor light emitting device according to the present embodiment. As shown in FIG. 1, the semiconductor light emitting device 1 of the present embodiment includes a substrate 2 having a main surface 4 and a back surface 8 opposite to the main surface 4. The substrate 2 may be formed using an arbitrary material, and may be, for example, a ceramic substrate, a metal substrate having an insulating layer formed on the surface, a metal core substrate, a high heat dissipation multilayer resin substrate, or the like.

  A semiconductor light emitting element 10 is disposed on the main surface 4 of the substrate 2. The semiconductor light emitting element 10 is, for example, a blue LED (Light Emitting Diode) chip that emits blue light. The semiconductor light emitting device 10 shown in FIG. 1 has a structure called a surface two-electrode type in which two electrodes are provided on the upper surface side, that is, on the surface opposite to the surface facing the main surface 4 of the substrate 2. Note that the semiconductor light emitting device 10 may have an upper and lower electrode type structure in which one electrode is provided on each surface.

  A through hole 6 is formed in the substrate 2 so as to penetrate the substrate 2 from the main surface 4 toward the back surface 8. The electrode pattern 16 is formed so as to reach from the main surface 4 of the substrate 2 to the back surface 8 through the through hole 6. As shown in FIG. 1, in the semiconductor light emitting device 1, two electrode patterns 16 are formed, one of which functions as an anode electrode and the other functions as a cathode electrode. The electrode pattern 16 on the back surface 8 side functions as an anode external electrode and a cathode external electrode that are connected and fixed to the anode and cathode land patterns on the mounting substrate by solder or the like when the semiconductor light emitting device 1 is mounted on the mounting substrate. . The electrode pattern 16 on the main surface 4 is electrically connected to the anode external electrode and the cathode external electrode on the back surface 8 side through through electrodes formed in the substrate 2 (in the through hole 6).

  The semiconductor light emitting element 10 is electrically connected to each of the two electrode patterns 16. The surface two-electrode semiconductor light emitting element 10 shown in FIG. 1 is electrically connected to the electrode pattern 16 by wire bonding via a wire 14. In the case of the upper and lower electrode type semiconductor light emitting device 10, die bonding is used in which the semiconductor light emitting device 10 is bonded and fixed on the main surface 4 using solder or a resin paste for die bonding and electrically connected to the electrode pattern 16. May be.

  Alternatively, the semiconductor light emitting device 10 may be flip-chip mounted on the substrate 2 using bump connection. That is, the semiconductor light emitting element 10 may be mounted on the main surface 4 in a face-down manner, and electrically connected to the electrode pattern 16 by a protruding terminal called a bump.

  A first transparent resin portion 20 is provided on the main surface 4. The first transparent resin portion 20 is a transparent resin layer that does not contain a phosphor. The first transparent resin portion 20 includes a sealing resin portion 22 that covers the semiconductor light emitting element 10. Since the semiconductor light emitting element 10 of the present embodiment is connected to the electrode pattern 16 by wire bonding, the sealing resin portion 22 is formed so as to cover the two wires 14. The sealing resin portion 22 is formed in a dome shape (spherical shape) in the vicinity of the semiconductor light emitting element 10 and has an outer surface 23 having a circular arc shape shown in FIG. The sealing resin part 22 has a dome-shaped sealing shape. The sealing resin portion 22 may be formed in a rectangular box shape having a rectangular cross section.

  The first transparent resin portion 20 also includes a peripheral wall portion 26 that surrounds the periphery of the sealing resin portion 22, and a connection portion 34 that connects the sealing resin portion 22 and the peripheral wall portion 26. The semiconductor light emitting device 1 also includes a second transparent resin portion 40 that is formed inside the peripheral wall portion 26 and covers the sealing resin portion 22. The peripheral wall portion 26 formed around the semiconductor light emitting element 10 stores the resin material forming the second transparent resin portion 40 inside the peripheral wall portion 26, and the second transparent resin on the first transparent resin portion 20. It functions as a damming portion for forming the portion 40.

  FIG. 2 is an enlarged cross-sectional view showing the vicinity of the semiconductor light emitting device 10 shown in FIG. With reference to FIG. 2, a recess 38 in which the first transparent resin portion 20 is recessed is formed inside the peripheral wall portion 26 surrounding the sealing resin portion 22. The peripheral wall portion 26 has an annular inner peripheral side surface 28 on the side facing the sealing resin portion 22, and an annular outer peripheral side surface 32 (see FIG. 1) farther from the semiconductor light emitting element 10 than the inner peripheral side surface 28. The peripheral wall portion 26 also has an annular upper end portion 30 that connects the inner peripheral side surface 28 and the outer peripheral side surface 32 and is provided substantially parallel to the main surface 4 of the substrate 2. The upper end portion 30 forms the top end surface of the peripheral wall portion 26 that functions as a damming portion. In FIG. 2, the second transparent resin portion 40 is not shown.

  The recess 38 is surrounded by the inner peripheral side surface 28 of the peripheral wall portion 26 and the outer surface 23 of the sealing resin portion 22. The sealing resin portion 22 has a top portion 24 farthest from the main surface 4. The top portion 24 is located at the uppermost portion of the outer surface 23 of the dome-shaped sealing resin portion 22. The upper end portion 30 of the peripheral wall portion 26 that forms the upper portion of the damming portion is set to be higher than the top portion 24 of the sealing resin portion 22. The sealing resin portion 22 and the peripheral wall portion 26 are formed so that the distance from the main surface 4 to the upper end portion 30 is larger than the top portion 24 over the entire periphery of the sealing resin portion 22.

  When the first transparent resin portion 20 is formed in this manner, when the resin material forming the second transparent resin portion 40 is filled in the recess 38, the resin material is entirely on the outer surface 23 of the sealing resin portion 22. Cover. Therefore, it is possible to prevent the thickness of the second transparent resin portion 40 from becoming too small in the vicinity immediately above the semiconductor light emitting element 10 and to secure an appropriate thickness of the second transparent resin portion 40 in the vicinity of the top portion 24. . Accordingly, the second transparent resin portion 40 having a sufficient thickness can be provided on the entire upper side of the sealing resin portion 22, thereby improving the uniformity of the light distribution characteristics of the semiconductor light emitting device 1.

  As shown in FIG. 2, the semiconductor light emitting device 10 includes a light emitting layer 12 that generates light. One of the upper and lower layers of the light emitting layer 12 is an n-type semiconductor layer, and the other is a p-type semiconductor layer. The light emitting layer 12 is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The semiconductor light emitting device 10 has a stacked structure in which an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer are stacked.

  FIG. 3 is a schematic cross-sectional view showing the configuration of the second transparent resin portion 40. FIG. 3 is an enlarged view of a portion of the semiconductor light emitting device 1 shown in FIG. 1 near the second transparent resin portion 40. As shown in FIG. 3, the resin material is filled inside the recess 38 (see FIG. 2) formed by the first transparent resin portion 20, and the second transparent resin portion 40 is formed. The second transparent resin portion 40 includes a phosphor 42 therein. The second transparent resin part 40 stored in the recess 38 is a transparent resin part containing a fluorescent substance containing a fluorescent substance 42 therein.

  As the phosphor 42, a YAG (yttrium, aluminum, garnet), TAG (terbium, aluminum, garnet), or BOS (Barium Ortho-Silicate) yellow phosphor can be used. Alternatively, a combination of a nitride-based red phosphor such as CaAlSiN3: Eu and a green phosphor Ca3 (Sc, Mg) 2Si3O12: Ce, BOS-based, β-sialon, or the like can be preferably used.

  The phosphor 42 settles in the second transparent resin portion 40, thereby forming a phosphor layer 44 having a relatively high concentration of the phosphor 42 in a portion close to the sealing resin portion 22. The second transparent resin portion 40 has a phosphor layer 44 formed in the vicinity of the contact surface 43 that contacts the outer surface 23 of the sealing resin portion 22. The contact surface 43 that forms the surface of the phosphor layer 44 is in surface contact with the outer surface 23 of the sealing resin portion 22.

  The phosphor 42 may be uniformly dispersed in the second transparent resin portion 40, but as shown in FIG. 3, the phosphor 42 is allowed to settle along the outer surface 23 of the dome-shaped sealing resin portion 22. By forming such a layered phosphor layer 44, the uniformity of the light distribution characteristics of the semiconductor light emitting device 1 can be improved. When the distribution of the phosphors 42 in the second transparent resin portion 40 becomes non-uniform, the balance of the amount of light between the blue light and the fluorescent light differs depending on the light extraction direction. As a result, the angle dependency of chromaticity increases, and it becomes difficult to use the semiconductor light emitting device 1 as a light source of a planar light source device. On the other hand, when the phosphor 42 is deposited on the phosphor layer 44 along the sealing resin portion 22, it is possible to suppress the occurrence of angle dependency of chromaticity and to make the alignment characteristics of the semiconductor light emitting device 1 more uniform. This is advantageous.

  Returning to FIG. 2, the connecting portion 34 that connects the sealing resin portion 22 and the peripheral wall portion 26 has a thickness d smaller than the distance dL between the main surface 4 and the light emitting layer 12 in the thickness direction of the substrate 2. Have. That is, the distance along the thickness direction of the substrate 2 from the surface of the first transparent resin portion 20 to the main surface 4 of the substrate 2 in the connection portion 34 is the thickness d. This thickness d is the thickness of the substrate 2. The distance dL is smaller than the distance dL from the main surface 4 of the substrate 2 in the direction.

  If the thickness d of the connecting portion 34 is larger than the distance dL, the amount of light extracted directly outside without passing through the phosphor layer 44 increases. As a result, the amount of blue light from the semiconductor light emitting element 10 that is not converted into fluorescent light by the phosphor 42 increases, so that the distribution of light distribution characteristics related to the chromaticity of light from the semiconductor light emitting device 1 increases. By limiting the thickness of the connection portion 34 as described above, the blue light extracted from the semiconductor light emitting element 10 is emitted to the outside via the phosphor layer 44, so that a desired amount of blue light is emitted from the phosphor 42. Can be converted into fluorescent light. Therefore, it is possible to suppress an increase in the distribution of orientation characteristics related to the chromaticity of light generated by the semiconductor light emitting device 1 and to improve the uniformity of the light distribution characteristics of the semiconductor light emitting device 1.

  4 is a plan view of a part of the semiconductor light emitting device 1 shown in FIG. As shown in FIG. 4, the shape of the inner peripheral side surface 28 (in other words, the outer shape of the recess 38 formed inside the damming portion) of the peripheral wall portion 26 as the damming portion viewed from above is a circular shape. . However, the shape is not limited to this, and the peripheral wall portion 26 may be a square whose one side is parallel to the outer periphery of the substrate 2 or a square inclined by 45 ° with respect to the outer periphery of the substrate 2. The shape of the peripheral wall portion 26 can be arbitrarily changed according to a desired light emission pattern and light distribution characteristics.

  In the present embodiment, the sealing resin portion 22 has a dome shape, and the two-dimensional shape of the sealing resin portion 22 viewed from above is also circular. 1 and 4, the circle formed by the outer shape of the sealing resin portion 22 and the circle formed by the inner peripheral side surface 28 of the peripheral wall portion 26 share the symmetry axis S as the center of each circle. . That is, the sealing resin portion 22, the inner peripheral side surface 28, and the second transparent resin portion 40 are formed concentrically. The semiconductor light emitting element 10 is also mounted on the substrate 2 around the symmetry axis S. With such a structure, the light extracted from the semiconductor light emitting element 10 reaches the phosphor layer 44 via the sealing resin portion 22 in a central symmetry without depending on the light extraction direction, and becomes fluorescent light. The white light is evenly emitted in the circumferential direction around the symmetry axis S after being converted.

  In the present embodiment, one semiconductor light emitting element 10 is arranged at the center of the symmetry axis S, but a plurality of semiconductor light emitting elements may be arranged around the symmetry axis S in a symmetrical manner. Alternatively, one semiconductor light emitting element may be arranged at the center of the symmetry axis S, and other semiconductor light emitting elements may be arranged symmetrically around the symmetry axis S so as to surround the one semiconductor light emitting element.

  Referring to FIG. 1 again, the semiconductor light emitting device 1 further includes a third transparent resin portion 50 that covers the second transparent resin portion 40. The third transparent resin portion 50 further covers the outer peripheral side surface 32 and the upper end portion 30 of the peripheral wall portion 26 of the sealing resin portion 22. The third transparent resin portion 50 is a transparent resin layer that does not contain a phosphor. The third transparent resin portion 50 includes an outer peripheral surface 52 that forms a boundary with the atmosphere. The third transparent resin portion 50 is provided so as to cover the sealing resin portion 22, the connection portion 34, and the peripheral wall portion 26 of the first transparent resin portion 20 and to cover the entire second transparent resin portion 40. Yes.

  The third transparent resin portion 50 covering the entire outer peripheral side surface 32 and the inner diameter side of the outer peripheral side surface 32 of the peripheral wall portion 26 is formed in a dome shape, and the outer peripheral surface 52 having a circular arc shape shown in FIG. Have. A part of the outer peripheral surface 52 of the third transparent resin portion 50 covering the sealing resin portion 22 and the second transparent resin portion 40 is formed in a spherical shape. Since the outermost surface 52 has a spherical shape and the third transparent resin portion 50 can make the outermost surface of the sealing body of the semiconductor light emitting device 1 spherical, the emitted light from the semiconductor light emitting element 10 and the phosphor 42 can be transmitted to the outside (atmosphere layer). ) Can be taken out isotropically and efficiently. If the third transparent resin part 50 partially covers the first and second transparent resin parts 20 and 40, the shape of the outer peripheral surface 52 tends to be irregular. By covering the entire transparent resin portion 20 and the second transparent resin portion 40, the outermost surface of the sealing body can be easily formed in a hemispherical shape.

  The cross-sectional shape of the third transparent resin portion 50 shown in FIG. 1 has a line-symmetric shape with the symmetry axis S as the center. The inner peripheral side surface 28 of the peripheral wall portion 26, the sealing resin portion 22, the second transparent resin portion 40, and the third transparent resin portion 50 all have an axisymmetric shape sharing a symmetry axis S, The shapes of the outer surface 23 of the sealing resin portion 22, the outer surface of the second transparent resin portion 40, and the outer peripheral surface 52 of the third transparent resin portion 50 are symmetrical about the central axis. Therefore, the semiconductor light emitting device 1 can obtain a light emission pattern that is more centrally symmetric.

  The first transparent resin part 20, the second transparent resin part 40, and the third transparent resin part 50 may be formed of the same resin material such as a silicone resin. Or the 1st transparent resin part 20, the 2nd transparent resin part 40, and the 3rd transparent resin part 50 may have the same refractive index and the same thermal expansion coefficient. By setting the same refractive index, scattering loss at the resin layer interface can be prevented. By using the same thermal expansion coefficient, peeling at the resin layer interface can be prevented.

  FIG. 5 is a diagram showing a virtual spherical surface with the origin O as the center in the semiconductor light emitting device shown in FIG. FIG. 6 is a diagram schematically showing the semiconductor light emitting device shown in FIG. 1 on coordinates with the origin O as the center. When the first, second, and third transparent resin portions 20, 40, and 50 have the same refractive index, the shape of the phosphor layer 44 and the material and shape of the third transparent resin portion 50 are R> r · It is determined that the relationship of n is established.

  Here, R represents the radius of the spherical surface including the outer peripheral surface 52 of the third transparent resin portion 50 with the mounting position of the semiconductor light emitting element 10 on the substrate 2 as the center (origin O). r indicates the radius of a virtual spherical surface 91 including the phosphor layer 44 therein. In addition, when the phosphor 42 is not substantially settled in the second transparent resin portion 40 and is dispersed substantially uniformly, and as a result, the phosphor layer 44 is not formed in the second transparent resin portion 40, r represents the radius of a virtual spherical surface that includes the entire second transparent resin portion 40 inside. n shows the refractive index of the 1st, 2nd and 3rd transparent resin part 20,40,50. With such a configuration, light emitted inside the spherical surface 91 can be efficiently extracted into the atmospheric layer. The reason will be described below.

  Referring to FIG. 6, emission point L is plotted at an arbitrary position on spherical surface 91 (corresponding to a virtual spherical surface including phosphor layer 44) on coordinates centered on origin O. The light emitting point L indicates the phosphor 42 and the light extraction surface of the semiconductor light emitting device 10 (P-type / N-type semiconductor layer, light emitting layer, crystal surface portion of the substrate of the semiconductor light emitting device). . The resin surface A is plotted at a position on the outer peripheral surface 52 (corresponding to the spherical surface including the outer peripheral surface 52 of the third transparent resin portion 50) where the light emitted from the light emitting point L is incident at the incident angle α. An angle formed by a line segment connecting the origin O and the light emitting point L and a line segment connecting the light emitting point L and the resin surface A is defined as θ.

At this time, the following relational expression is established from the sine theorem.
(R / sin θ) = (r / sin α)
Organizing the above formula,
sin α = r · sin θ / R
From this equation, when θ = π / 2, α takes the maximum value (αmax).

That is, the following (Formula 1) is established.
sin α ≦ sin (αmax) = r / R (Formula 1)
The following (Formula 2) is established between the incident angle α and the critical angle θc of total reflection at the boundary between the third transparent resin portion 50 and the atmospheric layer, from Snell's law.
sin θc = 1 / n (Formula 2)
Now, in the semiconductor light emitting device 1 always α <θc, that is,
αmax <θc (Formula 3)
If this relationship is established, all the light emitted from the light emitting point L can be extracted to the atmospheric layer 46.

By arranging (Formula 1) to (Formula 3), the following relational expression is established.
r / R = sin (αmax) <sin θc = 1 / n
As a result, by providing the phosphor layer 44 and the first, second and third transparent resin portions 20, 40, 50 so that the relationship of R> r · n is established, the spherical surface 91 is emitted from the inside to the outside. All the light can be extracted into the atmosphere.

  A method for manufacturing the semiconductor light emitting device 1 having the above configuration will be described in detail below. FIG. 7 is a flowchart showing manufacturing steps of the semiconductor light emitting device 1. As shown in FIG. 7, first, in step (S10), a substrate 2 having a main surface 4 is prepared. As the substrate 2, any suitable substrate such as a ceramic substrate, a metal substrate having an insulating layer formed on the surface, a metal core substrate, or a high heat dissipation multilayer resin substrate can be used.

  Next, in step (S20), a metal pattern for forming electrode pattern 16 is formed on main surface 4 and back surface 8 of substrate 2. If necessary, a through hole 6 that penetrates the substrate 2 in the thickness direction is formed, and a metal pattern on the main surface 4 side and a metal pattern on the back surface 8 side are connected by a through electrode that passes through the through hole 6.

  Next, in the step (S30), the semiconductor light emitting element 10 is disposed on the main surface 4 of the substrate 2. The semiconductor light emitting element 10 is disposed on the main surface 4 so that the center thereof is aligned with the symmetry axis S. Subsequently, in the step (S40), the electrode of the semiconductor light emitting element 10 and the electrode pattern 16 are electrically connected. For example, the electrode of the semiconductor light emitting element 10 and the electrode pattern 16 are electrically connected by any suitable method such as wire bonding using a wire 14, die bonding, or flip chip mounting.

  Next, in the step (S50), the first transparent resin portion 20 is formed on the main surface 4. The first transparent resin portion 20 includes a sealing resin portion 22 that covers the semiconductor light emitting element 10, a peripheral wall portion 26 that surrounds the periphery of the sealing resin portion 22, and a connection that connects the sealing resin portion 22 and the peripheral wall portion 26. Part 34. Details of the step of forming the first transparent resin portion 20 (S50) will be described later.

  Next, in a process (S60), the 2nd transparent resin part 40 containing the fluorescent substance 42 is formed inside the surrounding wall part 26 so that the sealing resin part 22 may be covered. Details of the step of forming the second transparent resin portion 40 (S60) will be described later.

  Next, in a process (S70), the 3rd transparent resin part 50 which covers the 1st transparent resin part 20 and the 2nd transparent resin part 40 whole is formed. Details of the step of forming the third transparent resin portion 50 (S70) will be described later.

  Next, post-processing is performed in step (S80). For example, if necessary, deburring that has occurred on the outer peripheral surface 52 of the third transparent resin portion 50 is performed. For example, a plurality of semiconductor light emitting devices 1 having the same shape formed on the same substrate 2 are diced. The single semiconductor light-emitting device 1 is obtained by cutting by the above. In this way, the semiconductor light emitting device 1 having desired optical characteristics is completed.

  FIG. 8 is a flowchart showing details of the step (S50) of forming the first transparent resin portion 20. As shown in FIG. 8, the step of forming the first transparent resin portion 20 (S 50) includes the step of installing the mold 62 on the main surface 4 (S 51) and the resin material in the internal space 64 of the mold 62. A step of supplying 68 (S52), a step of curing the supplied resin material 68 (S53), and a step of removing the mold 62 (S54).

  FIG. 9 is a cross-sectional view showing a state in which the mold 62 is installed on the main surface 4 of the substrate 2. FIG. 10 is a cross-sectional view showing a state where the resin material 68 is filled in the mold 62. As shown in FIGS. 9 and 10, the first transparent resin portion 20 has the mold 62 placed at an appropriate position, and then the resin material 68 is placed in the internal space 64 of the mold 62 in accordance with the arrow in FIG. 9. Filled, made using mold molding. Mold molding requires an initial investment cost for the fabrication of the mold 62, but once the mold 62 is fabricated, it is a method capable of forming a resin molded product having a stable shape at low cost and with high mass productivity. . In this example, transfer molding, which is an example of mold molding, is applied.

  As a method for forming the first transparent resin portion 20 using other mold molding, compression molding, injection molding, or the like can be used.

  As shown in FIG. 9, if a mold 62 having a shape corresponding to the plurality of first transparent resin portions 20 is prepared, the sealing resin is obtained through a process of supplying a resin material 68 to the internal space 64 of the mold 62. The portion 22 and the peripheral wall portion 26 can be formed simultaneously, and the plurality of first transparent resin portions 20 can be formed simultaneously. In this way, between the sealing resin portion 22 and the peripheral wall portion 26 that are collectively formed by die molding, a connecting portion 34 (see FIGS. 1 and 2) that is a portion having a small thickness d that connects them. However, the connecting portion 34 serves as a path through which the resin passes when the resin material 68 is supplied. The resin material 68 is supplied via the connection part 34 as a resin injection path, whereby the shape of the first transparent resin part 20 is formed.

  In order to secure the resin injection path, the connecting portion 34 has a thickness d of 50 μm or more in the thickness direction of the substrate 2. By setting the thickness d of the connecting portion 34 to 50 μm or more, a sufficient resin injection path for injecting the resin material 68 can be secured, so that the entire internal space 64 of the mold 62 can be easily filled with the resin material. it can. Therefore, the productivity of mold molding can be improved.

  However, as described above, from the viewpoint of improving the distribution of orientation characteristics related to the chromaticity of light generated by the semiconductor light emitting device 1, the light emitting layer 12 is formed on the main surface of the substrate 2 in the thickness direction of the substrate 2. It is necessary to make it smaller than the distance dL away from 4. Therefore, it is desirable to make the thickness d as small as possible within the range of 50 μm or more. The thickness d is appropriately set according to the height of the light emitting layer 12 from the back surface 8 of the substrate 2 of the semiconductor light emitting element 10 to be used. It is necessary to decide. On the contrary, if the height of the light emitting layer 12 from the back surface 8 of the semiconductor light emitting element 10 to be used is increased, the thickness d of the connecting portion 34 can be increased, and the manufacturing margin of the first transparent resin portion 20 is sufficient. It can be secured.

  In addition, the damming portion for the resin material that forms the second transparent resin portion 40 in a subsequent process is integrally formed by mold molding. Therefore, it is not necessary to provide a separate step of disposing the damming portion on the substrate 2, and it is not necessary to remove the damming portion. As a result, the manufacturing process of the semiconductor light emitting device 1 can be simplified, so that the manufacturing cost can be reduced.

  FIG. 11 is a flowchart showing details of the step (S60) of forming the second transparent resin portion 40. As shown in FIG. 11, in the step of forming the second transparent resin portion 40 (S60), the step of potting the resin material 78 inside the peripheral wall portion 26 (S61) and the potted resin material 78 are cured. And a step (S62).

  FIG. 12 is a cross-sectional view showing a state where the potting device 74 is prepared. FIG. 13 is a cross-sectional view showing a state in which the resin material 78 forming the second transparent resin portion 40 is filled. As shown in FIG. 12, a potting device for injecting a transparent resin material 78 containing a phosphor into a recess 38 surrounded by the peripheral wall portion 26 of the first transparent resin portion 20 by potting. 74 is prepared. In FIG. 13, the resin material 78 is injected into the concave portion 38 using the potting device 74, and the resin material 78 is cured to form the second transparent resin portion 40.

  During the initial heating stage when the resin material 78 is cured, the viscosity of the resin material 78 decreases. By adjusting the viscosity reduction time to be long, the phosphor 42 contained in the potted resin material 78 can be easily settled. By using the resin material 78 having a lower viscosity that decreases during the initial heating stage, the phosphor 42 can be precipitated in a short time, and the time required for the phosphor 42 to settle can be shortened.

  Conversely, in the case where the phosphors 42 are dispersed almost uniformly in the second transparent resin portion 40, the above-described viscosity reduction time may be shortened, or the resin material 78 in which the viscosity reduction during the initial heating stage is small. Can be used.

  During the potting, the shape of the second transparent resin portion 40 can be stabilized by the shape of the concave portion 38 surrounded by the peripheral wall portion 26 and the sealing resin portion 22. The peripheral wall portion 26 that functions as a damming portion for the resin material 78 is formed in the same shape by molding. Therefore, the second transparent resin portion 40 having substantially the same shape can be easily obtained by injecting an equal amount of the resin material 78 into the concave portion 38 formed by mold molding.

  FIG. 14 is a flowchart showing details of the step (S70) of forming the third transparent resin portion 50. As shown in FIG. 14, the step of forming the third transparent resin portion 50 (S 70) includes the step of installing a mold 82 that covers the sealing resin portion 22 (S 71) and the internal space 84 of the mold 82. A step of supplying the resin material 88 (S72), a step of curing the supplied resin material 88 (S73), and a step of removing the mold 82 (S74) are provided.

  FIG. 15 is a cross-sectional view illustrating a state in which a mold 82 that covers the sealing resin portion 22 is installed. FIG. 16 is a cross-sectional view showing a state where the resin material 88 is filled in the mold 82. As shown in FIGS. 15 and 16, the third transparent resin portion 50 has the mold 82 placed at an appropriate position, and then the resin material 88 is placed in the internal space 84 of the mold 82 in accordance with the arrow in FIG. 15. Filled, made using mold molding. This example is an example of transfer molding.

  As a method for forming the third transparent resin portion 50 using other mold molding, compression molding, injection molding, or the like can be used as in the case of the first transparent resin portion 20 described above.

  As shown in FIG. 15, if a mold 82 having a shape corresponding to the plurality of third transparent resin portions 50 is prepared, a plurality of third molds can be obtained by one step of supplying a resin material to the internal space 84 of the mold 82. The transparent resin portion 50 can be formed.

  FIG. 17 is a cross-sectional view of the semiconductor light emitting device assembly 100 manufactured by the manufacturing method of the present embodiment. A semiconductor light emitting device assembly 100 shown in FIG. 17 includes a plurality of semiconductor light emitting devices, that is, the semiconductor light emitting device 1 and another semiconductor light emitting device 101 adjacent to the semiconductor light emitting device 1.

  The first transparent resin portion 20 of the semiconductor light emitting device 1 and the first transparent resin portion 120 of the other semiconductor light emitting device 101 are integrally formed by the mold molding described with reference to FIGS. ing. The third transparent resin portion 50 of the semiconductor light emitting device 1 and the third transparent resin portion 150 of the other semiconductor light emitting device 101 are integrally formed by the mold molding described with reference to FIGS. ing.

  Since the first transparent resin portions 20 and 120 are formed using mold molding in the same process, the first transparent resin portions 20 and 120 are disposed between the semiconductor light emitting device 1 and the other semiconductor light emitting devices 101. A connecting portion 129 for connecting the two is formed. Since the third transparent resin portions 50 and 150 are formed using mold molding in the same process, the third transparent resin portions 50 and 150 are interposed between the semiconductor light emitting device 1 and the other semiconductor light emitting devices 101. The connection part 159 which connects is formed. The connecting portions 129 and 159 are portions generated by the filling path of the resin material when filling the resin material into the inner space of the mold in the mold molding.

  The first transparent resin parts 20 and 120 have an integral structure with a connecting part 129 interposed therebetween. The third transparent resin parts 50 and 150 have an integral structure with a connecting part 159 interposed therebetween. As described above, in the semiconductor light emitting device assembly 100 in which the first transparent resin portions 20 and 120 and the third transparent resin portions 50 and 150 are formed by molding, the dome-shaped third transparent resin portions 50 and 150 are formed. The thin resin layers (connecting portions 129 and 159) that connect the semiconductor light emitting devices 1 and 101 are left along the main surface 4 of the substrate 2.

  A semiconductor light emitting device assembly 100 including a plurality of semiconductor light emitting devices 1 and 101 can be used as a planar light source such as a lighting device. Further, the semiconductor light emitting device assembly 100 may be cut along the dicing line D shown in FIG. 15, and the separated semiconductor light emitting devices 1 and 101 may be used separately.

  As described above, in the semiconductor light emitting device 1 according to the present embodiment, a sheet (dam sheet) in which holes are formed in a sheet of silicone resin or fluororesin is used, and the resin is poured into the holes of the dam sheet by the potting method. It is not necessary to form a resin molded product by a method of curing the resin and then removing the dam sheet. Instead, the peripheral wall portion 26 formed by molding functions as a damming portion when the second transparent resin portion 40 is potted. Therefore, the semiconductor light emitting device 1 can be manufactured without using a disposable dam sheet. And the 1st transparent resin part 20 and the 3rd transparent resin part 50 can be formed with the same material. In the first transparent resin portion 20 formed of a mold, it is difficult to take an isolated sealing body structure that seals only the peripheral portion of the semiconductor light emitting element 10 due to the necessity of securing the injection path of the resin material. The first transparent resin portion 20 has a structure including a sealing resin portion 22, a peripheral wall portion 26, and a connection portion 34.

  In addition, when compared with the double dome structure proposed in the prior art (both of which are formed by mold molding and the phosphor is contained in the first dome), the first phosphor-containing dome is Since the phosphor-containing resin is thinly formed on the substrate other than the dome, the phosphor is wasted and the reflection efficiency of the substrate is lowered. On the other hand, in the second transparent resin portion 40 of the semiconductor light emitting device 1 of the present embodiment, the fluorescence that is a resin layer containing the phosphor 42 only around the sealing resin portion 22 that covers the semiconductor light emitting element 10. A body layer 44 is formed. Therefore, the phosphor 42 is not wasted and the reflection effect of the substrate 2 can be improved.

  Although the embodiment of the present invention has been described as above, the embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  DESCRIPTION OF SYMBOLS 1,101 Semiconductor light-emitting device, 2 board | substrate, 4 main surface, 10 semiconductor light emitting element, 12 light emitting layer, 20,120 1st transparent resin part, 22 sealing resin part, 23 outer surface, 24 top part, 26 peripheral wall part, 28 inner peripheral side surface, 30 upper end portion, 32 outer peripheral side surface, 34 connection portion, 38 concave portion, 40 second transparent resin portion, 42 phosphor, 43 contact surface, 44 phosphor layer, 50, 150 third transparent resin portion 52, outer peripheral surface, 62, 82 mold, 64, 84 internal space, 68, 78, 88 resin material, 74 potting device, 100 semiconductor light emitting device assembly, 129, 159 connecting portion.

Claims (16)

A substrate having a main surface;
A semiconductor light emitting device disposed on the main surface;
A sealing resin portion that covers the semiconductor light emitting element; a peripheral wall portion that surrounds the periphery of the sealing resin portion; and a connection portion that connects the sealing resin portion and the peripheral wall portion, and is provided on the main surface. A first transparent resin portion formed,
A second transparent resin part including a phosphor and covering the sealing resin part formed inside the peripheral wall part;
And a third transparent resin portion covering the second transparent resin portion.   2. The semiconductor light emitting device according to claim 1, wherein the first transparent resin portion, the second transparent resin portion, and the third transparent resin portion have the same refractive index. The third transparent resin portion further covers an outer peripheral side surface and an upper end portion of the peripheral wall portion of the sealing resin portion, and includes an outer peripheral surface that forms a boundary with the atmosphere,
The semiconductor light emitting device according to claim 1, wherein at least a part of the outer peripheral surface is formed in a spherical shape. The sealing resin portion has a top portion farthest from the main surface,
4. The semiconductor light emitting device according to claim 1, wherein the peripheral wall portion has an upper end portion whose distance from the main surface is larger than the top portion over the entire periphery of the sealing resin portion.   The semiconductor light-emitting device according to claim 4, wherein at least a part of the outer surface of the sealing resin portion is formed in a spherical shape. The semiconductor light emitting device includes a light emitting layer,
6. The semiconductor light emitting device according to claim 1, wherein the connection portion has a thickness smaller than a distance between the main surface and the light emitting layer in a thickness direction of the substrate.   The semiconductor light emitting device according to claim 1, wherein the connection portion has a thickness of 50 μm or more in a thickness direction of the substrate.   8. The semiconductor light emitting device according to claim 1, wherein the phosphors are substantially evenly dispersed in the second transparent resin portion. 9. The second transparent resin part has a phosphor layer having a relatively high concentration of the phosphor,
The semiconductor light emitting device according to claim 1, wherein the phosphor layer is in surface contact with the sealing resin portion.   10. The semiconductor light emitting device according to claim 1, wherein the first transparent resin portion and the third transparent resin portion have an axisymmetric shape sharing a symmetry axis. A semiconductor light emitting device assembly comprising a plurality of semiconductor light emitting devices according to any one of claims 1 to 10,
The first transparent resin portion of the semiconductor light emitting device has a structure integrated with a first transparent resin portion of another semiconductor light emitting device adjacent to the semiconductor light emitting device,
The semiconductor light emitting device assembly, wherein the third transparent resin portion of the semiconductor light emitting device has a structure integrated with a third transparent resin portion of the other semiconductor light emitting device. Preparing a substrate having a main surface;
Disposing a semiconductor light emitting element on the main surface;
A sealing resin portion covering the semiconductor light emitting element; a peripheral wall portion surrounding the periphery of the sealing resin portion; and a connection portion connecting the sealing resin portion and the peripheral wall portion on the main surface. Forming a first transparent resin portion;
Forming a second transparent resin portion containing a phosphor so as to cover the sealing resin portion inside the peripheral wall portion; and
Forming a third transparent resin portion covering the second transparent resin portion. The step of forming the first transparent resin portion includes
Installing a mold on the main surface;
Supplying a resin material to the internal space of the mold;
Curing the supplied resin material;
The method for manufacturing a semiconductor light emitting device according to claim 12, further comprising a step of removing the mold. The step of forming the second transparent resin portion includes:
Potting resin material inside the peripheral wall,
The method of manufacturing a semiconductor light emitting device according to claim 12, further comprising: curing the potted resin material.   The method of manufacturing a semiconductor light emitting device according to claim 14, wherein the step of forming the second transparent resin portion further comprises a step of precipitating a phosphor contained in the potted resin material. The step of forming the third transparent resin portion includes
Installing a mold for covering the sealing resin portion;
Supplying a resin material to the internal space of the mold;
Curing the supplied resin material;
The method for manufacturing a semiconductor light emitting device according to claim 12, further comprising a step of removing the mold.

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