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JP2011165836A - Power semiconductor device - Google Patents

Power semiconductor device Download PDF

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Publication number
JP2011165836A
JP2011165836A JP2010026105A JP2010026105A JP2011165836A JP 2011165836 A JP2011165836 A JP 2011165836A JP 2010026105 A JP2010026105 A JP 2010026105A JP 2010026105 A JP2010026105 A JP 2010026105A JP 2011165836 A JP2011165836 A JP 2011165836A
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semiconductor device
power semiconductor
electrode
external electrode
lead terminal
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JP5218442B2 (en
Inventor
Shingo Sudo
進吾 須藤
Yohei Omoto
洋平 大本
Toshiya Tadakuma
利弥 只熊
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device which has higher reliability than before. <P>SOLUTION: The power semiconductor device includes a tubular electrode 8 fixed to a circuit pattern on which a semiconductor element is mounted, a resin housing 1 which seals the semiconductor element and the tubular electrode such that the other end of the tubular electrode is exposed, and an external electrode 2 which is inserted into the tubular electrode and has a protrusion portion 21 abutting on the other end or the resin housing as a result of the insertion. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、樹脂封止型の半導体装置に関し、特に電力用半導体装置であってパッケージ上面より電極を取り出す半導体装置に関する。   The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a power semiconductor device in which an electrode is taken out from an upper surface of a package.

半導体装置は、その内部回路において１ｋＶ以上の絶縁耐圧を有する半導体チップ（例えばＩＧＢＴ等）を扱うことがある。このような電力用半導体装置では、内部回路の地絡を防止するため、半導体装置の筐体つまりモールド樹脂において、当該半導体装置に備わる放熱板と電極との間の絶縁距離を確保することが必須である。   A semiconductor device may handle a semiconductor chip (eg, IGBT) having a dielectric breakdown voltage of 1 kV or higher in its internal circuit. In such a power semiconductor device, in order to prevent a ground fault of the internal circuit, it is essential to ensure an insulation distance between the heat sink and the electrode provided in the semiconductor device in the housing of the semiconductor device, that is, the mold resin. It is.

一方、半導体装置の外形の小型化を図るためには、半導体装置の上面から電極を取り出す構成が好ましい。また、半導体装置の筐体を作製する方法としては、生産性及び信頼性の向上が可能なトランスファモールド法が知られている。しかしながら、該トランスファモールド法では、狭隘な部分、例えばモールド金型の合わせ面であるパーティングライン部分にも封止樹脂が流入してしまうことから、一般的には上記パーティングラインにリードフレームを配置して、封止樹脂が金型外へ流出するのを抑制している。   On the other hand, in order to reduce the size of the outer shape of the semiconductor device, it is preferable to take out the electrode from the upper surface of the semiconductor device. As a method for manufacturing a housing of a semiconductor device, a transfer mold method capable of improving productivity and reliability is known. However, in the transfer molding method, since the sealing resin also flows into a narrow part, for example, a parting line part that is a mating surface of the mold, a lead frame is generally attached to the parting line. It arrange | positions and it suppresses that sealing resin flows out of a metal mold | die.

このようなトランスファモールド法を用いて、上述のように半導体装置の上面から電極を取り出す半導体モジュールの開発が進められており、具体的構造について、下記の特許文献１に開示がある。   Development of a semiconductor module in which an electrode is extracted from the upper surface of a semiconductor device as described above using such a transfer mold method has been advanced, and a specific structure is disclosed in Patent Document 1 below.

特許文献１では、パワーモジュールにおける内部回路基板に起立設置された外部接続端子に封止樹脂漏出阻止部を、別途、取り付けたり、張出し成形して構成している。そして、上記封止樹脂漏出阻止部をモールド用の金型に密着させることにより、トランスファモールド法によって構成される筐体上面からの外部接続端子の取り出しを実現することを開示している。   In Patent Document 1, a sealing resin leakage prevention portion is separately attached to an external connection terminal that is erected on an internal circuit board in a power module, or is formed by overhanging. And it discloses that the external connection terminal can be taken out from the upper surface of the casing constituted by the transfer molding method by bringing the sealing resin leakage prevention portion into close contact with a mold.

特開２００９−５９８１２号公報JP 2009-59812 A

しかしながら、従来技術には下記のような問題がある。即ち、特許文献１では、樹脂筐体上面からピン状の外部接続端子を突出可能であるが、上記封止漏出阻止部が金型に密着するように、内部の回路基板に対して外部接続端子を垂直に接続する必要があり、かつ接続後における外部接続端子の高さを揃える必要がある。よって、特許文献１の発明は、多数の外部接続端子を取り出す構造には不向きである。また、外部接続端子と、プリント基板などの外部配線との接続において両者のピッチにズレがあるときには、外部接続端子が変形し、樹脂筐体と外部接続端子との界面に応力が作用した状態となる。このような応力が作用した状況で、外部接続端子が数十アンペアのような大電流を扱い、高温環境で長時間使用される等、電力用半導体装置が過酷な環境下で使用される場合、電力用半導体装置としての信頼性を向上させるためには、樹脂筐体と外部接続端子との界面で発生する応力を緩和する必要がある。   However, the prior art has the following problems. That is, in Patent Document 1, a pin-shaped external connection terminal can be projected from the upper surface of the resin housing, but the external connection terminal is connected to the internal circuit board so that the sealing leakage prevention portion is in close contact with the mold. Need to be connected vertically, and the heights of the external connection terminals after connection need to be made uniform. Therefore, the invention of Patent Document 1 is not suitable for a structure in which a large number of external connection terminals are taken out. Further, when the pitch between the external connection terminal and the external wiring such as a printed circuit board is misaligned, the external connection terminal is deformed and stress is applied to the interface between the resin housing and the external connection terminal. Become. In the situation where such stress is applied, the external connection terminal handles a large current such as several tens of amperes, and when the power semiconductor device is used in a harsh environment, such as being used for a long time in a high temperature environment, In order to improve the reliability as a power semiconductor device, it is necessary to relieve the stress generated at the interface between the resin casing and the external connection terminal.

本発明は、上述したような問題点を解決するためになされたもので、従来に比べて信頼性の高い電力用半導体装置を提供することを目的とする。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a power semiconductor device having higher reliability than the conventional one.

上記目的を達成するため、本発明は以下のように構成する。
即ち、本発明の第１態様における電力用半導体装置は、半導体素子が実装される回路パターンを有する基板と、筒状形状であり、上記回路パターンに固定される一端部、及び上記一端部に対向する他端部を有する筒状電極と、上記筒状電極の上記他端部における少なくとも他端を露出させて、上記基板、上記半導体素子、及び上記筒状電極を封止する樹脂筐体と、上記筒状電極の上記他端部に挿入される外部電極であって、上記挿入により、上記他端に当接し又は上記樹脂筐体に当接する張出部を有する外部電極と、を備えたことを特徴とする。 In order to achieve the above object, the present invention is configured as follows.
That is, the power semiconductor device according to the first aspect of the present invention includes a substrate having a circuit pattern on which a semiconductor element is mounted, a cylindrical shape, one end fixed to the circuit pattern, and facing the one end. A cylindrical electrode having the other end, and a resin casing that exposes at least the other end of the cylindrical electrode at the other end to seal the substrate, the semiconductor element, and the cylindrical electrode; An external electrode that is inserted into the other end of the cylindrical electrode, and has an overhanging portion that abuts against the other end or abuts against the resin casing by the insertion. It is characterized by.

本発明の第１態様における電力用半導体装置によれば、外部電極は、筒状電極に挿入されたときに筒状電極の他端又は樹脂筐体に当接する張出部を有する。よって、筒状電極と外部電極との配列ピッチにズレが存在して外部電極が変形した状態であっても、上記張出部が筒状電極の他端あるいは樹脂筐体に支持されており、樹脂筐体と外部電極との界面に作用する応力を緩和することができる。したがって、たとえ、上記応力が作用した状況において、外部電極が大電流を扱い、高温環境で長時間使用される等、電力用半導体装置が過酷な環境下で使用された場合であっても、電力用半導体装置としての信頼性を従来に比べて向上することができる。   According to the power semiconductor device of the first aspect of the present invention, the external electrode has the overhanging portion that comes into contact with the other end of the cylindrical electrode or the resin housing when inserted into the cylindrical electrode. Therefore, even when there is a deviation in the arrangement pitch between the cylindrical electrode and the external electrode and the external electrode is deformed, the overhanging portion is supported by the other end of the cylindrical electrode or the resin casing, The stress acting on the interface between the resin casing and the external electrode can be relaxed. Therefore, even if the power semiconductor device is used in a harsh environment, such as when the external electrode handles a large current and is used for a long time in a high-temperature environment in the situation where the stress is applied, the power As a semiconductor device, the reliability can be improved as compared with the prior art.

また、上記張出部を上記他端又は樹脂筐体に当接させることによって、樹脂筐体の成形金型との位置決め精度を緩和することができ、さらに外部電極の高さを張出部によって規定することができる。よって、複数の外部電極の高さを揃えることが容易となる。したがって、組立性にも優れた電力用半導体装置を提供することが可能となる。   Further, by bringing the overhanging portion into contact with the other end or the resin housing, the positioning accuracy of the resin housing with the molding die can be relaxed, and the height of the external electrode can be adjusted by the overhanging portion. Can be prescribed. Therefore, it becomes easy to make the heights of the plurality of external electrodes uniform. Therefore, it is possible to provide a power semiconductor device excellent in assemblability.

本発明の実施の形態１にかかる電力用半導体装置の、図２に示すＩ−Ｉ部における断面図である。FIG. 3 is a cross-sectional view of the power semiconductor device according to the first embodiment of the present invention, taken along line II in FIG. 2. 図１に示す電力用半導体装置の斜視図である。FIG. 2 is a perspective view of the power semiconductor device shown in FIG. 1. 本発明の実施の形態２にかかる電力用半導体装置の断面図である。It is sectional drawing of the semiconductor device for electric power concerning Embodiment 2 of this invention. 図３に示す電力用半導体装置を作製するための方法の一例を説明するための図である。It is a figure for demonstrating an example of the method for producing the power semiconductor device shown in FIG. 図３に示す電力用半導体装置を作製するための他の方法を説明するための図である。It is a figure for demonstrating the other method for producing the power semiconductor device shown in FIG. 本発明の実施の形態３にかかる電力用半導体装置の斜視図である。It is a perspective view of the semiconductor device for electric power concerning Embodiment 3 of this invention. 図６に示す電力用半導体装置に使用されるリード端子を示す正面図及び側面図である。It is the front view and side view which show the lead terminal used for the power semiconductor device shown in FIG. 本発明の実施の形態４にかかる電力用半導体装置に使用されるリード端子の正面図及び側面図である。It is the front view and side view of a lead terminal which are used for the power semiconductor device concerning Embodiment 4 of this invention. 図８に示すリード端子の一変形例における正面図及び側面図である。FIG. 9 is a front view and a side view of a modified example of the lead terminal shown in FIG. 8.

本発明の実施形態である電力用半導体装置について、図を参照しながら以下に説明する。尚、各図において、同一又は同様の構成部分については同じ符号を付している。また、以下に説明する各実施の形態では、本発明による効果が顕著に現れることから、半導体装置としてＩＧＢＴ（絶縁ゲート型バイポーラトランジスタ）及びＦＷＤｉ（フリーホイール・ダイオード）等の発熱性の素子を例に採るが、本発明は、これらに限定するものではなく、勿論、通常の半導体装置にも適用可能である。   A power semiconductor device according to an embodiment of the present invention will be described below with reference to the drawings. In each figure, the same or similar components are denoted by the same reference numerals. Further, in each of the embodiments described below, since the effects of the present invention are remarkably exhibited, heat generating elements such as IGBT (Insulated Gate Bipolar Transistor) and FWDi (Free Wheel Diode) are exemplified as semiconductor devices. However, the present invention is not limited to these, and can be applied to ordinary semiconductor devices.

実施の形態１．
図１は、本発明の実施の形態１にかかる電力用半導体装置１０１の外形図であって、図２に示すＩ−Ｉ方向における電力用半導体装置１０１の断面が示されている。本実施形態の電力用半導体装置１０１は、その基本的構成部分として、回路基板４と、筒状電極８と、樹脂筐体１と、外部電極２とを有する。 Embodiment 1 FIG.
FIG. 1 is an outline view of the power semiconductor device 101 according to the first embodiment of the present invention, and shows a cross section of the power semiconductor device 101 in the II direction shown in FIG. The power semiconductor device 101 of this embodiment includes a circuit board 4, a cylindrical electrode 8, a resin casing 1, and an external electrode 2 as its basic components.

回路基板４は、一般的にメタルベース基板として用いられ、放熱板４１に、熱伝導性絶縁接着層４２を介して回路パターン４３を接着して形成され、一実施例として４５ｍｍ×４０ｍｍの大きさにてなる基板である。放熱板４１は、本実施形態では銅にてなる厚さ２．０ｍｍの金属板であるが、熱伝導に優れる材料であれば良く、銅に限定されない。熱伝導性絶縁接着層４２は、本実施形態では、絶縁性接着剤としてのエポキシ樹脂に、熱伝導性フィラーとしてアルミナなどの比較的熱伝導率の高い絶縁性材料を混合した、厚さ０．２ｍｍにてなる層である。回路パターン４３は、本実施形態では、電気伝導と熱伝導に優れた銅を主とした金属よりなる厚さ０．５ｍｍの層にて形成した配線パターンである。   The circuit board 4 is generally used as a metal base board, and is formed by adhering a circuit pattern 43 to a heat radiating plate 41 via a heat conductive insulating adhesive layer 42. As an example, the circuit board 4 has a size of 45 mm × 40 mm. It is the board | substrate which consists of. In the present embodiment, the heat radiating plate 41 is a metal plate made of copper having a thickness of 2.0 mm. In the present embodiment, the heat conductive insulating adhesive layer 42 is formed by mixing an epoxy resin as an insulating adhesive with an insulating material having a relatively high thermal conductivity such as alumina as a heat conductive filler. It is a layer consisting of 2 mm. In the present embodiment, the circuit pattern 43 is a wiring pattern formed of a layer having a thickness of 0.5 mm made of a metal mainly made of copper, which is excellent in electrical conduction and thermal conduction.

このように構成された回路基板４の回路パターン４３には、半導体素子として、それぞれ厚さ０．１３ｍｍのＩＧＢＴ５と、ＦＷＤｉ６とが、厚さ５０μｍにて、接合材の一例に相当するＳｎ−Ａｇ−Ｃｕ系のはんだによって接続されている。該接続により、ＩＧＢＴ５及びＦＷＤｉ６におけるそれぞれの裏面電極であるコレクタ電極及びカソード電極（共に不図示）の回路パターン４３への電気的接続と、ＩＧＢＴ５及びＦＷＤｉ６の発生熱を放熱板４１へ、さらに放熱板４１に取り付けられるヒートシンク（不図示）への放熱とが可能となる。   In the circuit pattern 43 of the circuit board 4 configured as described above, as a semiconductor element, an IGBT 5 having a thickness of 0.13 mm and an FWDi 6 each having a thickness of 50 μm correspond to an example of a bonding material Sn-Ag. -Connected by Cu-based solder. By this connection, the collector electrode and the cathode electrode (both not shown) of the IGBT 5 and FWDi 6 are electrically connected to the circuit pattern 43, the generated heat of the IGBT 5 and FWDi 6 is transferred to the heat sink 41, and the heat sink Heat radiation to a heat sink (not shown) attached to 41 is possible.

ＩＧＢＴ５及びＦＷＤｉ６の表面電極であるエミッタ電極、アノード電極（共に不図示）には、一例として直径４００μｍのアルミニウムワイヤ７が超音波ワイヤボンディングにて接続され、上記表面電極は回路パターン４３と電気的に接続されている。また、ＩＧＢＴ５の制御電極であるゲート電極（不図示）にも、同様にアルミニウムワイヤ７が接続され、上記ゲート電極は回路パターン４３と接続されている。尚、上記ゲート電極との配線は、電圧印加が主であるため、ワイヤ７の径は２００μｍ程度の細いワイヤでも構わない。   For example, an aluminum wire 7 having a diameter of 400 μm is connected to the emitter electrode and the anode electrode (both not shown) as surface electrodes of the IGBT 5 and FWDi 6 by ultrasonic wire bonding, and the surface electrode is electrically connected to the circuit pattern 43. It is connected. Similarly, an aluminum wire 7 is connected to a gate electrode (not shown) that is a control electrode of the IGBT 5, and the gate electrode is connected to the circuit pattern 43. In addition, since the voltage is mainly applied to the wiring with the gate electrode, the wire 7 may be a thin wire having a diameter of about 200 μm.

さらに回路基板４の回路パターン４３には、導電性に優れる銅からなる高さ５．３ｍｍの筒状電極８が立設され、接合材の一例に相当しＩＧＢＴ５等を接合する、はんだと同種のはんだにて回路パターン４３に固定される。筒状電極８は、筒状であれば内形、外形の各形状は問わない。例えば、ナット状でネジを切った部材であっても構わない。本実施形態では円筒形状である。このような筒状電極８は、例えばパイプ材料を機械加工することで作製され、一実施例として外径が１．６ｍｍ、内径が１．０ｍｍであり、回路パターン４３に、はんだにより固定される、接続部に相当する一端部８ａと、外部電極２が挿入され接続される他端部８ｂとを有する。また、上記はんだは、はんだ付時のぬれ広がりによって、円筒状電極８の主に内周に、はんだフィレットを形成している。はんだフィレットが形成されると、筒状電極８の高さを決めるはんだ厚は、およそ１０μｍ程度となり、筒状電極８は、回路パターン４３に対してほぼ垂直に接続される。よって、筒状電極８の他端８ｃは、水平又はほぼ水平な状態となる。   Further, the circuit pattern 43 of the circuit board 4 is provided with a cylindrical electrode 8 having a height of 5.3 mm made of copper having excellent conductivity, which is equivalent to an example of a bonding material, and which joins the IGBT 5 or the like. The circuit pattern 43 is fixed with solder. As long as the cylindrical electrode 8 is cylindrical, the inner shape and the outer shape are not limited. For example, it may be a nut-like member with a screw cut. In this embodiment, it is a cylindrical shape. Such a cylindrical electrode 8 is produced, for example, by machining a pipe material. As an example, the cylindrical electrode 8 has an outer diameter of 1.6 mm and an inner diameter of 1.0 mm, and is fixed to the circuit pattern 43 by solder. , One end portion 8a corresponding to the connection portion, and the other end portion 8b to which the external electrode 2 is inserted and connected. The solder forms a solder fillet mainly on the inner periphery of the cylindrical electrode 8 due to the wetting and spreading during soldering. When the solder fillet is formed, the solder thickness that determines the height of the cylindrical electrode 8 is about 10 μm, and the cylindrical electrode 8 is connected substantially perpendicularly to the circuit pattern 43. Therefore, the other end 8c of the cylindrical electrode 8 is in a horizontal or almost horizontal state.

樹脂筐体１は、上述のように構成された回路基板４、ＩＧＢＴ５、ＦＷＤｉ６、及び筒状電極８を、水分や異物などから保護するためのものであり、また、外部電極２などを設計値に基づいた寸法で保持するためのものであり、主としてエポキシ樹脂を用いて、半導体装置の製造で一般的に採用されているトランスファモールド法を用いて成型される。本実施形態では、樹脂筐体１は、７６ｍｍ×４５ｍｍ、厚さ８ｍｍからなり、その上面１ａには、筒状電極８の上記他端部８ｂに位置する他端８ｃが露出している。尚、筒状電極８について、樹脂筐体１から露出する部分は、上記他端８ｃに限定されず、上記他端８ｃを含むその近傍部分つまり筒状電極８の側面も含むことができる。   The resin casing 1 is for protecting the circuit board 4, IGBT 5, FWDi 6, and the cylindrical electrode 8 configured as described above from moisture, foreign matter, and the like, and the external electrode 2 and the like are designed values. And is formed by using a transfer mold method generally employed in the manufacture of semiconductor devices, mainly using an epoxy resin. In the present embodiment, the resin casing 1 has a size of 76 mm × 45 mm and a thickness of 8 mm, and the other end 8 c located at the other end 8 b of the cylindrical electrode 8 is exposed on the upper surface 1 a. In addition, about the cylindrical electrode 8, the part exposed from the resin housing | casing 1 is not limited to the said other end 8c, The vicinity part containing the said other end 8c, ie, the side surface of the cylindrical electrode 8, can also be included.

また、樹脂筐体１には、当該樹脂筐体１に露出した、放熱板４１の露出面に放熱グリース等を介して接続されるヒートシンク（不図示）を取り付けるための貫通穴１ｂが設けられており、ネジ止めにより上記ヒートシンクの固定が可能である。該ヒートシンクからの放熱により、ＩＧＢＴ５及びＦＷＤｉ６の発熱による温度上昇がさらに抑制される。また、筒状電極８には、ピン状の端子にてなる外部電極２が挿入され、外部機器と当該半導体装置１０１との電気的接続が可能となる。   Further, the resin casing 1 is provided with a through hole 1b for attaching a heat sink (not shown) that is exposed to the resin casing 1 and connected to the exposed surface of the heat radiating plate 41 via heat radiating grease or the like. The heat sink can be fixed by screwing. Due to heat dissipation from the heat sink, temperature rise due to heat generation of the IGBT 5 and FWDi 6 is further suppressed. Further, the cylindrical electrode 8 is inserted with the external electrode 2 formed of a pin-shaped terminal, so that the external device and the semiconductor device 101 can be electrically connected.

外部電極２は、本実施形態では、リン青銅などの銅合金からなる直径１．２ｍｍ、高さ１０ｍｍのほぼ円柱形状のピン電極であり、その一端部２２が筒状電極８の上記他端部８ｂに挿入される。さらに外部電極２は、本実施形態において特徴的構成の一つである張出部２１を有する。張出部２１は、外部電極２が筒状電極８に挿入されたとき、筒状電極８の上記他端８ｃに当接し又は樹脂筐体１の上面１ａに当接する部分であり、本実施形態では、図２に示すように、外部電極２の本体部２３から外部電極２の直径方向に突出した円形のつば形状を有する。このような張出部２１は、例えば金型による潰し加工にて本体部２３と一体成形可能であり、一実施例として、直径が約２ｍｍである。   In the present embodiment, the external electrode 2 is a substantially cylindrical pin electrode having a diameter of 1.2 mm and a height of 10 mm made of a copper alloy such as phosphor bronze, and one end 22 thereof is the other end of the cylindrical electrode 8. 8b is inserted. Furthermore, the external electrode 2 has an overhang portion 21 which is one of the characteristic configurations in the present embodiment. The overhanging portion 21 is a portion that contacts the other end 8c of the cylindrical electrode 8 or the upper surface 1a of the resin casing 1 when the external electrode 2 is inserted into the cylindrical electrode 8, and this embodiment Then, as shown in FIG. 2, it has a circular collar shape protruding from the main body portion 23 of the external electrode 2 in the diameter direction of the external electrode 2. Such an overhang portion 21 can be integrally formed with the main body portion 23 by, for example, a crushing process using a mold, and has a diameter of about 2 mm as an example.

以上のような構成を有する電力用半導体装置１０１の製造方法としては、メタルベースの回路基板４に、ＩＧＢＴ５、ＦＷＤｉ６、及び筒状電極８をはんだ付けし、アルミニウムワイヤ７で接続するところまで完了した組立部品を、予め加熱されたモールド金型に装填する。次に、トランスファモールド法を用いてエポキシ樹脂を主剤とするモールド樹脂を上記金型内に流入させ、加熱、加圧環境下で硬化させる。この際、筒状電極８とモールド金型とを接触させることで、筒状電極８の他端８ｃが閉止され、上記モールド樹脂の筒状電極８内への流入が抑制される。
このような樹脂封止成型後、筒状電極８に外部電極２を圧入することによって電力用半導体装置１０１が完成する。筒状電極８に外部電極２を圧入した状態では、外部電極２に張出部２１の当接面２１ａは、筒状電極８の他端８ｃに接触し又は樹脂筐体１の上面１ａに接触し、張出部２１は上面１ａより露出して配置される。 The manufacturing method of the power semiconductor device 101 having the above-described configuration has been completed until the IGBT 5, FWDi 6, and the cylindrical electrode 8 are soldered to the metal-based circuit board 4 and connected by the aluminum wire 7. The assembly part is loaded into a preheated mold. Next, a mold resin mainly composed of an epoxy resin is caused to flow into the mold using a transfer mold method, and is cured under a heating and pressure environment. At this time, the cylindrical electrode 8 and the mold are brought into contact with each other, whereby the other end 8c of the cylindrical electrode 8 is closed, and the flow of the mold resin into the cylindrical electrode 8 is suppressed.
After such resin sealing molding, the power semiconductor device 101 is completed by press-fitting the external electrode 2 into the cylindrical electrode 8. In a state in which the external electrode 2 is press-fitted into the cylindrical electrode 8, the contact surface 21 a of the projecting portion 21 contacts the external electrode 2 or the other end 8 c of the cylindrical electrode 8 or contacts the upper surface 1 a of the resin housing 1. And the overhang | projection part 21 is arrange | positioned exposed from the upper surface 1a.

以上説明した電力用半導体装置１０１によれば、外部電極２に張出部２１を設けたことにより以下の効果を得ることができる。
即ち、各外部電極２において、張出部２１から先端２４までの長さは均一にて作製されている。さらに、上述のように、筒状電極８の他端８ｃは水平あるいは略水平に設置され、樹脂筐体１の高さは金型で規定される。よって、上記他端８ｃあるいは樹脂筐体１の上面１ａに張出部２１を当接させることで、筒状電極８への外部電極２の挿入高さは、全ての外部電極２においてほぼ一定とすることができる。 According to the power semiconductor device 101 described above, the following effects can be obtained by providing the overhang portion 21 on the external electrode 2.
That is, in each external electrode 2, the length from the overhanging portion 21 to the tip 24 is made uniform. Furthermore, as described above, the other end 8c of the cylindrical electrode 8 is installed horizontally or substantially horizontally, and the height of the resin casing 1 is defined by a mold. Accordingly, the protruding height 21 is brought into contact with the other end 8c or the upper surface 1a of the resin casing 1 so that the insertion height of the external electrode 2 into the cylindrical electrode 8 is substantially constant in all the external electrodes 2. can do.

また、外部電極２は、一般的に、外部の配線で用いられるプリント基板（図示せず）に設けられたスルーホールとはんだ付けにより接続される。その際、外部電極２の位置や、外部電極２間のピッチが上記スルーホールのピッチとずれている場合には、外部電極２をわずかに変形させて上記基板、つまり上記スルーホールに挿入する必要がある。このとき、張出部２１が存在しない場合には、外部電極２に加えられた変形が筒状電極８への外部電極２の圧入部に対する応力となる。   The external electrode 2 is generally connected to a through hole provided in a printed board (not shown) used for external wiring by soldering. At that time, if the position of the external electrode 2 or the pitch between the external electrodes 2 is deviated from the pitch of the through hole, the external electrode 2 needs to be slightly deformed and inserted into the substrate, that is, the through hole. There is. At this time, when the projecting portion 21 does not exist, the deformation applied to the external electrode 2 becomes a stress on the press-fitting portion of the external electrode 2 into the cylindrical electrode 8.

これに対し本実施形態の場合には、張出部２１が筒状電極８の他端８ｃあるいは樹脂筐体１の上面１ａに接触していることから、外部電極２に作用している曲げ応力によって上記圧入部に加わる応力を分散させ軽減することができる。よって、筒状電極８と樹脂筐体１との界面に作用する応力を従来に比べて軽減することができ、樹脂筐体１における界面部分からの亀裂の発生及び進展を抑制することができる。したがって、電力用半導体装置１０１としての信頼性を従来に比べて向上させることができる。   On the other hand, in the case of the present embodiment, since the overhanging portion 21 is in contact with the other end 8c of the cylindrical electrode 8 or the upper surface 1a of the resin casing 1, the bending stress acting on the external electrode 2 Thus, the stress applied to the press-fit portion can be dispersed and reduced. Therefore, the stress acting on the interface between the cylindrical electrode 8 and the resin casing 1 can be reduced as compared with the conventional case, and the generation and progress of cracks from the interface portion in the resin casing 1 can be suppressed. Therefore, the reliability as the power semiconductor device 101 can be improved as compared with the conventional case.

また、電力用半導体装置１０１を実際に使用する際には、電力用半導体装置１０１と、外部電極２が接続されている上記プリント基板との温度差によって、熱膨張率に依存した変形が外部電極２に作用する。よって、温度サイクル数が多い環境下や温度差が大きい環境下では、筒状電極８への外部電極２の圧入部、及び筒状電極８と樹脂筐体１との界面には、繰り返し応力が発生し、上記圧入部ではダメージが進展することも考えられる。しかしながら、本実施形態の場合、上述のように、張出部２１が圧入部及び上記界面に加わる応力を分散させ軽減することができることから、たとえ、電力用半導体装置１０１が過酷な環境下で使用された場合であっても、電力用半導体装置１０１の信頼性を向上することができる。ひいては電力用半導体装置１０１の長寿命化を図ることができる。   When the power semiconductor device 101 is actually used, deformation depending on the coefficient of thermal expansion is caused by the temperature difference between the power semiconductor device 101 and the printed circuit board to which the external electrode 2 is connected. Acts on 2. Therefore, in an environment where the number of temperature cycles is large or an environment where the temperature difference is large, repeated stress is applied to the press-fitting portion of the external electrode 2 into the cylindrical electrode 8 and the interface between the cylindrical electrode 8 and the resin casing 1. It is considered that the damage is generated at the press-fitting portion. However, in the case of the present embodiment, as described above, since the overhanging portion 21 can disperse and reduce the stress applied to the press-fitting portion and the interface, the power semiconductor device 101 is used in a harsh environment. Even in such a case, the reliability of the power semiconductor device 101 can be improved. As a result, the life of the power semiconductor device 101 can be extended.

尚、本実施形態では、上述のように、張出部２１は、外部電極２の本体部２３と一体成形されているが、例えば溶接や接着などの手段によって張出部２１用の別部材を本体部２３に取り付けることで形成してもよい。
さらにまた、張出部２１は、単に、筒状電極８の他端８ｃあるいは樹脂筐体１の上面１ａに接触するだけでなく、接着などの手段により、他端８ｃあるいは上面１ａに固定されてもよい。
このような変形例においても、上述した効果と同一の効果を奏することができる。 In the present embodiment, as described above, the overhanging portion 21 is integrally formed with the main body portion 23 of the external electrode 2. However, for example, another member for the overhanging portion 21 is attached by means such as welding or adhesion. You may form by attaching to the main-body part 23. FIG.
Furthermore, the overhanging portion 21 is not only brought into contact with the other end 8c of the cylindrical electrode 8 or the upper surface 1a of the resin casing 1, but is fixed to the other end 8c or the upper surface 1a by means such as adhesion. Also good.
Even in such a modification, the same effect as described above can be obtained.

また、外部電極２の先端部分と上記スルーホールとがはんだ付けされず単に圧入されるだけの場合、圧入時に外部電極２の中心と上記スルーホールの中心とのずれ量だけ、外部電極２が変形を受け、はんだ付の場合よりも高い応力が発生することが懸念される。しかしながらこの場合においても、張出部２１を設けたことで、外部電極２と筒状電極８との接続信頼性を向上させることが可能である。   Further, when the tip of the external electrode 2 and the through hole are merely soldered without being soldered, the external electrode 2 is deformed by the amount of deviation between the center of the external electrode 2 and the center of the through hole during press fitting. There is a concern that a higher stress is generated than in the case of soldering. However, even in this case, it is possible to improve the connection reliability between the external electrode 2 and the cylindrical electrode 8 by providing the overhanging portion 21.

また、本実施形態では、張出部２１は、外部電極２の本体部２３を中心とした円形状であることから、外部電極２が本体部２３を中心にいずれの方向に変形した場合でも、上記接続信頼性を確保することができる。   Further, in the present embodiment, since the overhanging portion 21 is circular with the main body portion 23 of the external electrode 2 as the center, even when the external electrode 2 is deformed in any direction around the main body portion 23, The connection reliability can be ensured.

実施の形態２．
図３は、本発明の実施の形態２にかかる電力用半導体装置１０２の断面図である。上述した実施の形態１では、複数の外部電極２における各張出部２１の間には何の物体も存在していない。これに対して本実施の形態２では、それぞれの張出部２１間に、樹脂筐体１による障壁部１１を設けた。この点でのみ、本実施の形態２は、実施の形態１における構成と異なり、実施の形態２におけるその他の構成は、実施の形態１の構成に同じである。よって、以下ではこの相違点のみについて説明を行う。 Embodiment 2. FIG.
FIG. 3 is a sectional view of the power semiconductor device 102 according to the second embodiment of the present invention. In the first embodiment described above, no object exists between the overhang portions 21 in the plurality of external electrodes 2. On the other hand, in the second embodiment, the barrier portion 11 made of the resin casing 1 is provided between the overhang portions 21. Only in this respect, the second embodiment is different from the configuration in the first embodiment, and other configurations in the second embodiment are the same as the configurations in the first embodiment. Therefore, only this difference will be described below.

上記障壁部１１は、隣接する張出部２１同士間において十分な沿面絶縁距離を確保するためのものである。即ち、実施の形態１における電力用半導体装置１０１と同様に、本実施の形態２の電力用半導体装置１０２においても高電圧を扱うため、隣接する各外部電極２においては十分な沿面絶縁距離をとる必要がある。一方、実施の形態１にて説明したように、各外部電極２に張出部２１を設けることで、各張出部２１間の絶縁距離を確保するためには、各外部電極２の配置ピッチを従前より大きくする必要が生じる。これでは半導体装置全体の大型化を招いてしまう。   The barrier portion 11 is for ensuring a sufficient creeping insulation distance between the adjacent overhang portions 21. That is, in the same way as the power semiconductor device 101 in the first embodiment, the power semiconductor device 102 in the second embodiment handles a high voltage, and therefore, the adjacent external electrodes 2 have a sufficient creeping insulation distance. There is a need. On the other hand, as described in the first embodiment, the arrangement pitch of each external electrode 2 is provided in order to secure the insulation distance between each overhang portion 21 by providing the overhang portion 21 in each external electrode 2. Need to be larger than before. This leads to an increase in the size of the entire semiconductor device.

そこで、本実施の形態２では、筒状電極８の長さを実施形態１の場合に比べて短くし、樹脂筐体１において、それぞれの筒状電極８の他端８ｃが位置し張出部２１が位置する部分に凹部１２を形成する。このように構成することで、隣接する張出部２１の間には、凹部１２を形成する側壁に対応する障壁部１１が存在する。障壁部１１によって、隣接する張出部２１同士の沿面距離及び空間距離を大きくすることが可能となり、電力用半導体装置１０２を大型化することなく十分な絶縁距離を確保することが可能となる。   Therefore, in the second embodiment, the length of the cylindrical electrode 8 is made shorter than in the case of the first embodiment, and the other end 8c of each cylindrical electrode 8 is positioned in the resin casing 1 so that the protruding portion is located. A recess 12 is formed in a portion where 21 is located. By configuring in this way, the barrier portion 11 corresponding to the side wall forming the recess 12 exists between the adjacent overhang portions 21. The barrier portion 11 makes it possible to increase the creeping distance and the spatial distance between the adjacent overhang portions 21 and to secure a sufficient insulation distance without increasing the size of the power semiconductor device 102.

本実施形態では、障壁部１１は、以下のような方法で形成される。即ち、図４に示すように、トランスファモールド法に用いられる上金型９１及び下金型９２の内、筒状電極８の他端８ｃ側に位置する上金型９１について、樹脂筐体１の上面１ａを成形する上金型９１の内面９１ａに対して上記他端８ｃを含む部分を凸状にすることで、樹脂筐体１に上記凹部１２を形成し障壁部１１を成形することができる。一実施例として、凹部１２の深さつまり障壁部１１の高さは、１．５ｍｍである。尚、障壁部１１への異物などの付着により、沿面距離が短くなることが考えられることから、障壁部１１の高さは、大きい方が好ましい。目安としては１ｍｍ以上の高さが望ましい。   In the present embodiment, the barrier portion 11 is formed by the following method. That is, as shown in FIG. 4, among the upper mold 91 and the lower mold 92 used in the transfer molding method, the upper mold 91 located on the other end 8 c side of the cylindrical electrode 8 is used for the resin casing 1. By making the portion including the other end 8 c convex with respect to the inner surface 91 a of the upper mold 91 for molding the upper surface 1 a, the barrier portion 11 can be formed by forming the concave portion 12 in the resin casing 1. . As an example, the depth of the concave portion 12, that is, the height of the barrier portion 11 is 1.5 mm. In addition, since it is thought that a creepage distance becomes short by adhesion of the foreign material etc. to the barrier part 11, the one where the height of the barrier part 11 is larger is preferable. As a guide, a height of 1 mm or more is desirable.

また、障壁部１１の別の形成方法としては、図５に示すように、例えばシリコーンなどの軟質材料９３を上金型９１と筒状電極８とで挟み、樹脂筐体１の成形後に取り外すことでも、実現可能である。軟質材料９３としては、好ましくはシリコーンなど、樹脂筐体１のエポキシ樹脂との接着性が低い材料が選択されるが、銅、黄銅などの軟質の金属を用いることも可能である。   Further, as another method of forming the barrier portion 11, as shown in FIG. 5, for example, a soft material 93 such as silicone is sandwiched between the upper mold 91 and the cylindrical electrode 8 and removed after the resin casing 1 is molded. But it is feasible. As the soft material 93, a material having a low adhesiveness to the epoxy resin of the resin casing 1 such as silicone is preferably selected, but a soft metal such as copper or brass can also be used.

また、本実施形態では上述のように樹脂筐体１の上面１ａに対して凹部１２を形成することで障壁部１１を形成したが、これとは逆に、図１に示すように上面１ａより突出して露出する、隣接する張出部２１同士の間に、上面１ａに凸状の障壁部を形成してもよい。   Further, in the present embodiment, the barrier portion 11 is formed by forming the concave portion 12 on the upper surface 1a of the resin casing 1 as described above. On the contrary, as shown in FIG. A convex barrier portion may be formed on the upper surface 1a between the adjacent protruding portions 21 that protrude and are exposed.

尚、上述のような方法で障壁部１１を有する樹脂筐体１を成形した後、実施の形態１にて示したものと同様に、筒状電極８に外部電極２を挿入することによって、電力用半導体装置１０２が構成される。
本実施形態では、外部電極２が筒状電極８に挿入されたとき、外部電極２の張出部２１の当接面２１ａは、筒状電極８の他端８ｃ、あるいは、凹部１２の底面１２ａ（図３）に接触し、張出部２１は底面１２ａより露出して配置される。 In addition, after molding the resin casing 1 having the barrier portion 11 by the method as described above, the external electrode 2 is inserted into the cylindrical electrode 8 in the same manner as shown in the first embodiment. A semiconductor device 102 is configured.
In the present embodiment, when the external electrode 2 is inserted into the cylindrical electrode 8, the contact surface 21 a of the protruding portion 21 of the external electrode 2 is the other end 8 c of the cylindrical electrode 8 or the bottom surface 12 a of the recess 12. In contact with (FIG. 3), the overhanging portion 21 is disposed to be exposed from the bottom surface 12a.

以上説明した本実施形態の電力用半導体装置１０２は、勿論、実施形態１の電力用半導体装置１０１による上述した効果を奏することができ、かつ、障壁部１１の形成によって、電力用半導体装置の小型化を図ることができる。   The power semiconductor device 102 according to the present embodiment described above can, of course, achieve the effects described above by the power semiconductor device 101 according to the first embodiment, and the size of the power semiconductor device can be reduced by forming the barrier portion 11. Can be achieved.

さらにまた、樹脂筐体１に上記凹部１２を形成するために、実施形態１の電力用半導体装置１０１の構成に比べて短い筒状電極８を用いる。よって、回路パターン４３に筒状電極８を立設するとき、回路パターン４３に対して筒状電極８が傾斜し難くなると共に、部材の寸法精度も向上し、組み立てが比較的容易になるという効果もある。   Furthermore, in order to form the recess 12 in the resin casing 1, a cylindrical electrode 8 that is shorter than the configuration of the power semiconductor device 101 of the first embodiment is used. Therefore, when the cylindrical electrode 8 is erected on the circuit pattern 43, the cylindrical electrode 8 is less likely to be inclined with respect to the circuit pattern 43, the dimensional accuracy of the members is improved, and the assembly is relatively easy. There is also.

実施の形態３．
図６は、本発明の実施の形態３にかかる電力用半導体装置１０３の斜視図である。本実施の形態では、ＩＧＢＴ５及びＦＷＤｉ６の主電極と接続される外部電極２として、実施の形態１、２におけるピン電極ではなく、一実施例として板幅２ｍｍ、板厚１ｍｍの板状のリード端子２５を用いる。また、図６に示すように、リード端子２５に対応して、樹脂筐体１には、上述の実施の形態２で説明した、凹部１２を形成している。本実施の形態３の電力用半導体装置１０３におけるその他の構成は、上述した実施の形態１，２の電力用半導体装置１０１，１０２における構成と同じであり、ここでの説明は省略する。以下には、相違する構成部分であるリード端子２５について主に説明を行う。 Embodiment 3 FIG.
FIG. 6 is a perspective view of the power semiconductor device 103 according to the third embodiment of the present invention. In this embodiment, the external electrode 2 connected to the main electrode of the IGBT 5 and FWDi 6 is not the pin electrode in the first and second embodiments, but a plate-like lead terminal having a plate width of 2 mm and a plate thickness of 1 mm as an example. 25 is used. As shown in FIG. 6, corresponding to the lead terminals 25, the resin casing 1 is formed with the recesses 12 described in the second embodiment. Other configurations of the power semiconductor device 103 according to the third embodiment are the same as those of the power semiconductor devices 101 and 102 according to the first and second embodiments described above, and a description thereof is omitted here. Hereinafter, the lead terminal 25 which is a different component will be mainly described.

ピン電極に代えてリード端子２５を用いる理由は、ピン端子に比べて断面積が大きく、例えば数十アンペアの大電流を流すことができるからである。このようなリード端子２５は、図７に示すようなプレスフィット端子であり、筒状電極８への接続は、上述した実施の形態１，２の場合と同様に圧入による。尚、図７において、左側の図はリード端子２５の正面図に相当し、右側の図はリード端子２５の側面図に相当する。   The reason for using the lead terminal 25 instead of the pin electrode is that the cross-sectional area is larger than that of the pin terminal, and a large current of, for example, several tens of amperes can flow. Such a lead terminal 25 is a press-fit terminal as shown in FIG. 7, and the connection to the cylindrical electrode 8 is performed by press fitting as in the case of the first and second embodiments. In FIG. 7, the left diagram corresponds to a front view of the lead terminal 25, and the right diagram corresponds to a side view of the lead terminal 25.

外部電極２としてのリード端子２５は、板形状の本体部２５３と、張出部２１とを有し、リード端子２５における張出部２１は、突出部２５１と、支持部２５２とを有する。
突出部２５１は、本体部２５３の板厚方向２５４に直交する板幅方向２５５に沿って、本体部２５３の軸方向におけるほぼ中央部から本体部２５３の両側へ突出する部材であり、その厚みは、本実施形態では本体部２５３の板厚と同じとしている。また、左右の突出部２５１は、本実施形態では同じ長さにて延在するが異なっても構わない。また、上記軸方向における突出部２５１の幅サイズは特に規定しない。尚、一実施例として、上記幅サイズは約３ｍｍである。 The lead terminal 25 as the external electrode 2 has a plate-shaped main body portion 253 and an overhang portion 21, and the overhang portion 21 in the lead terminal 25 has a protruding portion 251 and a support portion 252.
The protruding portion 251 is a member that protrudes from the substantially central portion in the axial direction of the main body portion 253 to both sides of the main body portion 253 along the plate width direction 255 orthogonal to the plate thickness direction 254 of the main body portion 253. In this embodiment, the plate thickness of the main body 253 is the same. Moreover, although the right and left protrusions 251 extend with the same length in this embodiment, they may be different. Further, the width size of the protruding portion 251 in the axial direction is not particularly defined. As an example, the width size is about 3 mm.

支持部２５２は、左右の各突出部２５１の先端部分を板厚方向２５４へ折り曲げて形成した部分であり、左右の各突出部２５１において互いに逆向きに適宜な長さにて延在する。尚、一実施例として、支持部２５２の長さは約１ｍｍである。   The support portion 252 is a portion formed by bending the tip portion of each of the left and right projecting portions 251 in the plate thickness direction 254, and extends at an appropriate length in opposite directions in the left and right projecting portions 251. As an example, the length of the support portion 252 is about 1 mm.

上述のように構成される突出部２５１及び支持部２５２の内、少なくとも支持部２５２の当接面２５２ａは、図６に示すように、リード端子２５が筒状電極８に圧入されたときに、樹脂筐体１における凹部１２の底面１２ａに接触する。また、突出部２５１及び支持部２５２は、底面１２ａより露出して配置される。   Of the protruding portion 251 and the support portion 252 configured as described above, at least the contact surface 252a of the support portion 252 is, as shown in FIG. 6, when the lead terminal 25 is press-fitted into the cylindrical electrode 8. It contacts the bottom surface 12 a of the recess 12 in the resin casing 1. Moreover, the protrusion part 251 and the support part 252 are arrange | positioned exposed from the bottom face 12a.

板状のリード端子２５が張出部２１として上述の突出部２５１及び支持部２５２を有することで以下のような効果を奏する。
即ち、例えばリード端子２５を外部の回路を構成するプリント基板（図示せず）などに接続する際、及び、上記プリント基板との接続後、リード端子２５を有する電力用半導体装置１０３が温度サイクル環境下に置かれた際には、電力用半導体装置１０３と上記プリント基板との温度差あるいは熱膨張率差により、リード端子２５を変形させる応力が発生する。よって、張出部２１として突出部２５１及び支持部２５２を有しない、単なる短冊状のリード端子であれば、特に板厚方向２５４への応力に対してはリード端子自体が撓み、筒状電極８との接続部に応力がかかる。 The plate-like lead terminal 25 has the above-described protruding portion 251 and support portion 252 as the overhanging portion 21, thereby providing the following effects.
That is, for example, when the lead terminal 25 is connected to a printed circuit board (not shown) constituting an external circuit and after the connection to the printed circuit board, the power semiconductor device 103 having the lead terminal 25 is in a temperature cycle environment. When placed underneath, a stress that deforms the lead terminal 25 is generated due to a temperature difference or a thermal expansion coefficient difference between the power semiconductor device 103 and the printed circuit board. Therefore, when the protruding portion 21 does not have the protruding portion 251 and the supporting portion 252 and is a simple strip-shaped lead terminal, the lead terminal itself bends in particular with respect to the stress in the plate thickness direction 254, and the cylindrical electrode 8. Stress is applied to the connection part.

これに対して本実施形態におけるリード端子２５は、突出部２５１及び支持部２５２を有することから、突出部２５１が延在する板幅方向２５５へのリード端子２５における変形又は応力は勿論緩和され、さらに板厚方向２５４へのリード端子２５における変形又は応力についても、支持部２５２を設けたことで緩和させることができる。   On the other hand, since the lead terminal 25 in the present embodiment has the protruding portion 251 and the support portion 252, the deformation or stress in the lead terminal 25 in the plate width direction 255 in which the protruding portion 251 extends is naturally relieved, Further, deformation or stress in the lead terminal 25 in the plate thickness direction 254 can be reduced by providing the support portion 252.

特に、図７に示されるリード端子２５のように、板幅方向２５５の反発力で支持されるプレスフィット端子を用いる場合には、板厚方向２５４における応力を緩和することで著しく信頼性を向上させることが可能となる。よって、支持部２５２を設けた構造は、非常に有効である。
また、リード端子２５を筒状電極８に圧入するときにおいても、板厚方向２５４へリード端子２５が傾き難くなる。よって、リード端子２５の角度を気にせずに筒状電極８への設置が完了するため、生産性の向上にも寄与する。
このような効果は、特に図６に示すような、それぞれのリード端子２５が同一の板幅方向２５５に沿って配向されている構成において顕著に発揮される。 In particular, when using a press-fit terminal supported by a repulsive force in the plate width direction 255, such as the lead terminal 25 shown in FIG. 7, the reliability is remarkably improved by relaxing the stress in the plate thickness direction 254. It becomes possible to make it. Therefore, the structure provided with the support portion 252 is very effective.
Even when the lead terminal 25 is press-fitted into the cylindrical electrode 8, the lead terminal 25 is less likely to tilt in the plate thickness direction 254. Therefore, since the installation to the cylindrical electrode 8 is completed without worrying about the angle of the lead terminal 25, it contributes to the improvement of productivity.
Such an effect is particularly prominent in a configuration in which the lead terminals 25 are oriented along the same plate width direction 255 as shown in FIG.

また、リード端子２５について、本実施形態では作製が容易であるという理由から、突出部２５１の先端部分を折り曲げることで支持部２５２を形成しているが、突出部２５１に対する支持部２５２の形成方法は、これに限定されない。例えば、突出部２５１とは別の部材を用い、接着等により各突出部２５１に取り付けてもよい。さらに、突出部２５１に対する支持部２５２の設置位置は、リード端子２５の板厚方向２５４への変形時におけるモーメント力の観点からすると突出部２５１の先端部分が好ましいが、上記先端部分に限定するものではなく、突出部２５１の延在方向において、板厚方向２５４への変形を抑制可能な位置とすることができる。また、支持部２５２の延在方向、つまり突出部２５１に対する支持部２５２の配向角度についても、本実施形態では樹脂筐体１における凹部１２の幅サイズを最小に抑えることができることから、９０度つまり板厚方向２５４としているが、これに限定されず、上述のように板厚方向２５４へのリード端子２５の変形を抑制可能な角度とすることができる。   Further, for the reason that the lead terminal 25 is easy to manufacture in the present embodiment, the support portion 252 is formed by bending the tip portion of the protrusion 251, but the method of forming the support portion 252 with respect to the protrusion 251 is also preferred. Is not limited to this. For example, a member different from the protruding portion 251 may be used and attached to each protruding portion 251 by adhesion or the like. Further, the position of the support portion 252 relative to the protrusion 251 is preferably the tip portion of the protrusion 251 from the viewpoint of moment force when the lead terminal 25 is deformed in the plate thickness direction 254, but is limited to the tip portion. Instead, in the extending direction of the protruding portion 251, it is possible to set a position where deformation in the plate thickness direction 254 can be suppressed. Further, with respect to the extending direction of the support portion 252, that is, the orientation angle of the support portion 252 with respect to the protruding portion 251, since the width size of the concave portion 12 in the resin casing 1 can be minimized in this embodiment, 90 degrees, Although it is set as the plate thickness direction 254, it is not limited to this, It can be set as the angle which can suppress the deformation | transformation of the lead terminal 25 to the plate thickness direction 254 as mentioned above.

リード端子２５について上述したような効果を有する本実施形態における電力用半導体装置１０３は、勿論、実施形態１の電力用半導体装置１０１による上述した効果を奏することができる。   The power semiconductor device 103 according to the present embodiment having the effects described above with respect to the lead terminal 25 can of course exhibit the effects described above with the power semiconductor device 101 according to the first embodiment.

実施の形態４．
図８は、本発明の実施の形態４における電力用半導体装置に備わり、外部電極２の変形例に相当するリード端子２６を示している。尚、図８において、左側の図はリード端子２６の正面図に相当し、右側の図はリード端子２６の側面図に相当する。このようなリード端子２６は、上述した実施の形態１から３の電力用半導体装置１０１〜１０３における外部電極２又はリード端子２５に代えて用いることができる。よって、以下では、リード端子２６についてのみ説明を行い、電力用半導体装置におけるその他の構成部分についての説明は省略する。尚、実施の形態３のように、リード端子２６は、ＩＧＢＴ５及びＦＷＤｉ６の主電極と接続される外部電極として使用するのが好ましい。 Embodiment 4 FIG.
FIG. 8 shows a lead terminal 26 corresponding to a modification of the external electrode 2 provided in the power semiconductor device according to the fourth embodiment of the present invention. In FIG. 8, the left diagram corresponds to a front view of the lead terminal 26, and the right diagram corresponds to a side view of the lead terminal 26. Such a lead terminal 26 can be used in place of the external electrode 2 or the lead terminal 25 in the power semiconductor devices 101 to 103 of the first to third embodiments described above. Accordingly, only the lead terminal 26 will be described below, and description of other components in the power semiconductor device will be omitted. As in the third embodiment, the lead terminal 26 is preferably used as an external electrode connected to the main electrodes of the IGBT 5 and FWDi 6.

リード端子２６は、上述したリード端子２５とほぼ同様の構成を有し、屈曲部２６１を有する点でのみ異なる。
屈曲部２６１は、リード端子２６における、突出部２５１及び支持部２５２と、先端２６２との間に位置し、リード端子２６の板厚方向２６４に凸となる部分であり、本実施形態では、半円形の円弧形状にてなる。尚、屈曲部２６１の形状は、円弧状に限定されず、例えばＶ字、Ｗ字、又はＳ字等の形状であってもよい。 The lead terminal 26 has substantially the same configuration as the lead terminal 25 described above, and is different only in that it has a bent portion 261.
The bent portion 261 is a portion of the lead terminal 26 that is located between the protruding portion 251 and the support portion 252 and the tip 262 and is convex in the plate thickness direction 264 of the lead terminal 26. It has a circular arc shape. In addition, the shape of the bending part 261 is not limited to circular arc shape, For example, shapes, such as V shape, W shape, or S shape, may be sufficient.

上述のような屈曲部２６１を有するリード端子２６は、以下のような効果を奏する。
即ち、実施の形態３で述べた通り、電力用半導体装置と外部の回路とを接続すると、使用環境における温度分布や、装置と基板との熱膨張率の差により、リード端子２６が変形したり、リード端子２６に応力が作用したりする。これに対しては上述したように、リード端子２６に備わる突出部２５１及び支持部２５２によって、リード端子２６と筒状電極８との接続信頼性を向上させることができる。 The lead terminal 26 having the bent portion 261 as described above has the following effects.
That is, as described in the third embodiment, when the power semiconductor device is connected to an external circuit, the lead terminal 26 may be deformed due to the temperature distribution in the usage environment or the difference in thermal expansion coefficient between the device and the substrate. A stress acts on the lead terminal 26. On the other hand, as described above, the connection reliability between the lead terminal 26 and the cylindrical electrode 8 can be improved by the protruding portion 251 and the support portion 252 provided in the lead terminal 26.

例えば上述のリード端子２５のように屈曲部２６１を有しないリード端子では、外部回路との接続部分であるはんだ付部や圧入部に応力が加わることになる。これは、リード端子における板厚方向２５４への力の作用は、リード端子自体が撓むことができるので、上記接続部分への応力伝播は緩和されるが、板幅方向２５５への作用については、リード端子が変形しにくいので、上記接続部分への応力は軽減されにくい。   For example, in a lead terminal that does not have a bent portion 261 such as the lead terminal 25 described above, stress is applied to a soldered portion or a press-fit portion that is a connection portion with an external circuit. This is because the action of the force in the plate thickness direction 254 at the lead terminal can be bent by the lead terminal itself, so that the stress propagation to the connecting portion is alleviated, but the action in the plate width direction 255 is Since the lead terminal is not easily deformed, the stress on the connection portion is difficult to be reduced.

そこで本実施の形態４では、リード端子２６に上記屈曲部２６１を設け、屈曲部２６１にて板幅方向２５５への力つまり変形を吸収する。これにより、リード端子２６と外部回路との接続部分に作用する応力を緩和し、上記接続部分の接続信頼性を向上させることができ、また、リード端子２６と外部回路との接続を簡素化することもできる。   Therefore, in the fourth embodiment, the bent portion 261 is provided on the lead terminal 26, and the bent portion 261 absorbs a force in the plate width direction 255, that is, deformation. Thereby, the stress acting on the connection portion between the lead terminal 26 and the external circuit can be relieved, the connection reliability of the connection portion can be improved, and the connection between the lead terminal 26 and the external circuit is simplified. You can also.

また、リード端子と外部回路との接続を、はんだ付や圧入ではなく、プレスフィット端子による圧入にて行う場合には、当該プレスフィット端子には、上記外部回路へ圧入する際の荷重によって軸方向に撓まず、かつ、上述したように当該プレスフィット端子の板厚方向及び板幅方向には可撓であることが要求される。よって、このようなプレスフィット端子としては、図９に示すリード端子２７が好ましい。リード端子２７は、軸方向の両端部分にプレスフィット端子部分を設け、リード端子２５と同様に突出部２５１及び支持部２５２を有し、かつ、突出部２５１及び支持部２５２と先端２７２との間に、ねじり部２７１を有する。ねじり部２７１は、リード端子２７における軸周り方向に９０度、当該リード端子２７をねじることで形成される部分である。これは、リード端子２７の板厚方向２７４には、リード端子２７が変形しやすいという特性を利用したものである。   In addition, when the lead terminal and the external circuit are connected by press-fitting with a press-fit terminal instead of soldering or press-fitting, the press-fit terminal has an axial direction due to the load when press-fitting into the external circuit. The press-fit terminal is required to be flexible in the plate thickness direction and plate width direction as described above. Therefore, as such a press-fit terminal, the lead terminal 27 shown in FIG. 9 is preferable. The lead terminal 27 is provided with a press-fit terminal portion at both end portions in the axial direction, and has a protruding portion 251 and a supporting portion 252 as in the case of the lead terminal 25, and between the protruding portion 251 and the supporting portion 252 and the distal end 272. In addition, a torsion part 271 is provided. The twisted portion 271 is a portion formed by twisting the lead terminal 27 by 90 degrees in the direction around the axis of the lead terminal 27. This utilizes the characteristic that the lead terminal 27 is easily deformed in the plate thickness direction 274 of the lead terminal 27.

上述のねじり部２７１は、例えば、電力用半導体装置の全体が高温となる場合など、上記外部回路のプリント基板と電力用半導体装置のリード端子との接続部分への負荷が大きい環境下で有効である。ねじり部２７１を設けることで、リード端子２７と上記外部回路とのはんだ付けを必要とせず、かつ、端子の軸方向における剛性を維持しながら応力を軽減可能なリード端子構造を提供することができる。このようなリード端子２７による効果は、特に、半導体素子を高い温度で使用できるＳｉＣ（シリコンカーバイド）を基材とした半導体装置において顕著に発揮される。また、上述のリード端子２７は、強い振動を受ける半導体装置などにおいても、接続信頼性の向上に寄与することができる。   The above-described twisted portion 271 is effective in an environment where a load on a connection portion between the printed circuit board of the external circuit and the lead terminal of the power semiconductor device is large, for example, when the entire power semiconductor device is at a high temperature. is there. By providing the torsion part 271, it is possible to provide a lead terminal structure that does not require soldering between the lead terminal 27 and the external circuit and that can reduce stress while maintaining rigidity in the axial direction of the terminal. . Such an effect of the lead terminal 27 is particularly prominent in a semiconductor device based on SiC (silicon carbide) that can use a semiconductor element at a high temperature. Further, the lead terminal 27 described above can contribute to the improvement of connection reliability even in a semiconductor device or the like that receives strong vibration.

リード端子２６，２７について上述したような効果を有する本実施形態における電力用半導体装置１０４は、勿論、実施形態１の電力用半導体装置１０１による上述した効果を奏することができる。
また、上述した各実施形態における構成を適宜組み合わせて構成することも可能である。 The power semiconductor device 104 according to the present embodiment having the effects described above with respect to the lead terminals 26 and 27 can of course exhibit the effects described above with the power semiconductor device 101 according to the first embodiment.
Moreover, it is also possible to combine the structure in each embodiment mentioned above suitably.

１ 樹脂筐体、２ 外部電極、４ 回路基板、５ ＩＧＢＴ、６ ＦＷＤｉ、
８ 筒状電極、１１ 障壁部、１２ 凹部、２１ 張出部、２５〜２７ リード端子、
１０１〜１０３ 電力用半導体装置、
２５１ 突出部、２５２ 支持部、２６１ 屈曲部、２７１ ねじり部。 1 resin housing, 2 external electrode, 4 circuit board, 5 IGBT, 6 FWDi,
8 cylindrical electrode, 11 barrier portion, 12 concave portion, 21 overhang portion, 25-27 lead terminal,
101-103 power semiconductor device,
251 Projection part, 252 Support part, 261 Bending part, 271 Torsion part.

Claims (7)

半導体素子が実装される回路パターンを有する基板と、
筒状形状であり、上記回路パターンに固定される一端部、及び上記一端部に対向する他端部を有する筒状電極と、
上記筒状電極の上記他端部における少なくとも他端を露出させて、上記基板、上記半導体素子、及び上記筒状電極を封止する樹脂筐体と、
上記筒状電極の上記他端部に挿入される外部電極であって、上記挿入により、上記他端に当接し又は上記樹脂筐体に当接する張出部を有する外部電極と、
を備えたことを特徴とする電力用半導体装置。 A substrate having a circuit pattern on which a semiconductor element is mounted;
A tubular electrode having a cylindrical shape and having one end fixed to the circuit pattern and the other end opposed to the one end;
A resin housing that exposes at least the other end of the other end of the cylindrical electrode and seals the substrate, the semiconductor element, and the cylindrical electrode;
An external electrode that is inserted into the other end of the cylindrical electrode, and has an overhanging portion that abuts against the other end or abuts against the resin housing by the insertion;
A power semiconductor device comprising: 上記筒状電極及び上記外部電極は複数組設けられ、
上記樹脂筐体は、隣接する上記張出部の間に形成される障壁部を有する、請求項１記載の電力用半導体装置。 A plurality of sets of the cylindrical electrode and the external electrode are provided,
The power semiconductor device according to claim 1, wherein the resin casing includes a barrier portion formed between the adjacent overhang portions. 上記障壁部は、上記樹脂筐体において上記張出部に対応して凹部を設けることで形成される、請求項２記載の電力用半導体装置。   The power semiconductor device according to claim 2, wherein the barrier portion is formed by providing a concave portion corresponding to the protruding portion in the resin casing. 上記外部電極は棒形状であり、上記張出部は円形のつば状にてなる、請求項１から３のいずれか１項に記載の電力用半導体装置。   4. The power semiconductor device according to claim 1, wherein the external electrode has a rod shape, and the projecting portion has a circular collar shape. 5. 上記外部電極は、板形状の本体部を有し、上記張出部は、上記本体部の板厚方向に直交する板幅方向に上記本体部の両側へ板厚にて延在する突出部と、両側の上記突出部からそれぞれ上記板厚方向で互いに逆向きに延在する支持部とを有する、請求項１から３のいずれか１項に記載の電力用半導体装置。   The external electrode has a plate-shaped main body portion, and the overhang portion includes a protruding portion that extends to both sides of the main body portion with a plate thickness in a plate width direction orthogonal to the plate thickness direction of the main body portion. 4. The power semiconductor device according to claim 1, further comprising support portions extending in opposite directions in the plate thickness direction from the protruding portions on both sides. 5. 上記外部電極は、板状形状であり、上記張出部と当該外部電極の先端との間に、当該外部電極の板厚方向に凸となる屈曲部を有する、請求項１から５のいずれか１項に記載の電力用半導体装置。   6. The external electrode according to claim 1, wherein the external electrode has a plate-like shape, and has a bent portion that is convex in the thickness direction of the external electrode between the projecting portion and the tip of the external electrode. 2. A power semiconductor device according to item 1. 上記外部電極は、板状形状であり、上記張出部と当該外部電極の先端との間に形成されるねじり部を有する、請求項１から５のいずれか１項に記載の電力用半導体装置。   6. The power semiconductor device according to claim 1, wherein the external electrode has a plate shape and has a torsion part formed between the overhang part and a tip of the external electrode. .
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