JP2011154940A - Transparent pattern electrode, method of manufacturing the electrode, and organic electronic device using the electrode and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To simply provide a pattern electrode excellent in conductivity and transparency and to provide an organic electronic device using the electrode. <P>SOLUTION: In the transparent pattern electrode 20 provided with, on its transparent support, a conductive metal layer 1 including metal fiber and a conductive polymer layer 2 containing a conductive polymer containing a π-conjugated conductive polymer and polyanion and a polymer (A), the conductive metal layer and the conductive polymer layer have a laminated structure like a pattern image. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a transparent pattern electrode excellent in conductivity and transparency, a method for producing the electrode, an organic electronic device using the electrode, and a method for producing the same.

  In recent years, with increasing demand for thin TVs, various types of display technologies such as liquid crystal, plasma, organic electroluminescence (hereinafter referred to as organic EL), field emission, and the like have been developed. In any of these displays having different display methods, the transparent electrode is an essential constituent technology. In addition to televisions, transparent electrodes are an indispensable technical element in touch panels, mobile phones, electronic paper, various solar cells, and various electroluminescence light control elements.

Conventionally, as transparent electrodes, various metal thin films such as Au, Ag, Pt, Cu, indium oxide doped with tin or zinc (ITO, IZO), zinc oxide doped with aluminum or gallium (AZO, GZO), fluorine, Metal oxide thin films such as tin oxide (FTO, ATO) doped with antimony, conductive nitride thin films such as TiN, ZrN, and HfN, and conductive boride thin films such as LaB ₆ are known and combinations thereof. Various electrodes such as Bi ₂ O ₃ / Au / Bi ₂ O ₃ and TiO ₂ / Ag / TiO ₂ are also known. In addition to inorganic substances, transparent electrodes using CNTs (carbon nanotubes) and conductive polymers have also been proposed (see, for example, Non-Patent Document 1).

  However, since the metal thin film, nitride thin film, boron thin film and conductive polymer thin film described above cannot have both light transmission properties and conductive properties, special technical fields such as electromagnetic shielding and the like are relatively high. It was used only in the touch panel field where resistance values are allowed.

  On the other hand, metal oxide thin films are becoming mainstream of transparent electrodes because they can achieve both light transmittance and conductivity and are excellent in durability. In particular, ITO is widely used as a transparent electrode for various optoelectronics because it has a good balance between light transmittance and conductivity and it is easy to form an electrode fine pattern by wet etching using an acid solution. The oxide conductor represented by the above ITO or the like forms a transparent conductive film on the substrate surface by a vacuum process such as a sputtering method or a liquid phase method such as a sol-gel method. In order to form a transparent conductive film by a vacuum process such as sputtering, expensive equipment is required. On the other hand, in the liquid phase method, high temperature treatment at 500 ° C. or higher is necessary to obtain high conductivity.

  As other transparent electrodes, a transparent electrode made of a fine mesh using metal nanowires is disclosed (for example, see Patent Document 1). Particularly in the case of metal nanowires using silver, it is possible to achieve both good conductivity and transparency due to the inherent high conductivity of silver by a simple formation method such as coating.

  In order to use the transparent electrode as an electrode for various devices such as an LCD, an EL element, a plasma display, an electrochromic display, a solar cell, and a touch panel, it is essential to form a pattern of the transparent electrode. Examples of a method for forming a transparent electrode pattern using metal nanowires include a method using printing ink containing an electrically conductive microwire (see, for example, Patent Document 2), a nanowire patterning method using photolithography, and the like.

  However, in the direct pattern printing method of metal nanowires, the conductivity decreases due to increased contact resistance between the metal nanowires caused by the binder, or in the patterning by etching using conventional photolithography, a resist pattern is formed and exposed. Since there are many pre- and post-processes of development, etching, resist stripping, post-processing and etching, and etching is performed in an etching solution, the etching accuracy may be reduced due to resist expansion and stripping. In addition, strict temperature control of the solution is necessary. Furthermore, the removal of the resist that has entered between the fine meshes of the metal nanowires may be insufficient, resulting in a decrease in transmittance, and the metal nanowires may also be detached together by liquid treatment such as development or resist removal. Thus, the conventional pattern forming method is not satisfactory. As a pattern forming method of the transparent electrode, there is a description of a method of pattern-printing a conductive polymer soluble in an organic solvent on an inorganic conductive layer and etching to form a pattern (see Patent Document 3). Inorganic tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, tin oxide, and other inorganic oxides are mainly used, and metal nanowires using silver are not mentioned at all.

US Patent Application Publication No. 2007/0074316 Special Table 2003-515622 JP 2006-236626 A

"Technology of transparent conductive film", page 80 (Ohm Publishing Co.)

  The objective of this invention is made | formed in view of the said situation, and is providing simply the pattern electrode excellent in electroconductivity and transparency, the organic electronic device using this electrode, and those manufacturing methods.

  The above object of the present invention can be achieved by the following configuration.

  1. A conductive polymer layer having a conductive metal layer containing metal fibers on a transparent support, and further comprising a conductive polymer comprising a π-conjugated conductive polymer and a polyanion, and the following polymer (A) A transparent pattern electrode, wherein the conductive metal layer and the conductive polymer layer have a pattern image-like laminated structure.

[Wherein, X ₁ , X ₂ and X ₃ each represent a hydrogen atom or a methyl group, and R _{1 to} R ₃ each represent an alkylene group having 5 or less carbon atoms. When the total number of moles of all monomers constituting the polymer (A) is defined as 100, l, m, and n represent the constituent ratio (mol%) of each monomer constituting the polymer (A), and 50 <= L + m + n <= 100 and l, m, and n are 0-100, respectively. ]
2. 2. The transparent pattern electrode according to 1 above, wherein the metal fiber is a metal nanowire.

  3. 3. The method for producing a transparent pattern electrode according to 1 or 2, wherein a step of uniformly forming a conductive metal layer on a transparent support, and then patterning a conductive polymer layer on the conductive metal layer And a step of fixing the conductive polymer layer, and then a step of removing a portion of the conductive metal layer without the conductive polymer layer on the support. Pattern electrode manufacturing method.

  4). 4. The method for producing a transparent pattern electrode according to 3 above, wherein the step of fixing the conductive polymer layer is a heat treatment step.

  5. 5. The method for producing a transparent pattern electrode according to 3 or 4, wherein the step of removing the conductive metal layer is performed by physical removal.

  6). 5. The method for producing a transparent pattern electrode according to 3 or 4, wherein the step of removing the conductive metal layer is performed by a chemical etching process.

  7). The step of forming an organic functional layer on the first electrode using the electrode formed by the method for producing a transparent pattern electrode according to any one of 3 to 6 above, And forming a second electrode as a counter electrode at least in a method for producing an organic electronic device.

  8). 8. An organic electronic device formed by the method for manufacturing an organic electronic device according to 7 above.

  According to the present invention, it is possible to simply provide a transparent pattern electrode excellent in smoothness, conductivity and transparency, an organic electronic device using the electrode, and a production method thereof.

It is a section lineblock diagram showing the formation process of the transparent pattern electrode of the present invention. It is a plane block diagram which shows the formation process of the transparent pattern electrode of this invention.

  Hereinafter, the present invention and its components will be described in detail.

(Transparent pattern electrode)
The transparent pattern electrode of the present invention is characterized in that the conductive metal layer and the conductive polymer layer have an image-like laminated structure.

  The formation process of the transparent pattern electrode of this invention is demonstrated using figures.

  FIG. 1 is a structural cross-sectional view showing the transparent pattern electrode forming process of the present invention, and FIG. 2 is a structural plan view showing the transparent pattern electrode forming process of the present invention.

  1 and 2, the conductive metal layer 1 is formed on the transparent support 10, and then the conductive polymer layer 2 is formed in a pattern on the conductive metal layer. By fixing the conductive polymer layer and removing the portion of the conductive metal layer without the conductive polymer layer, the conductive metal layer and the conductive polymer layer form the transparent pattern electrode 20 having an image-like laminated structure. I can do it.

  As a method for forming an image-like laminated structure, for example, a conductive metal layer is uniformly formed on a transparent support, and then a conductive polymer layer is formed in a pattern on the conductive metal layer. And a method of removing a portion of the conductive metal layer without the conductive polymer layer by physical removal or chemical etching.

  The method for uniformly forming the conductive metal layer is not particularly limited as long as it is a liquid phase film formation method in which a dispersion containing metal fibers is applied and dried to form a film, a roll coating method, a bar coating method, It is preferable to use a coating method such as a dip coating method, a spin coating method, a casting method, a die coating method, a blade coating method, a bar coating method, a gravure coating method, a curtain coating method, a spray coating method, or a doctor coating method.

  As a method for forming a conductive polymer layer in a pattern on the conductive metal layer, at least a conductive polymer comprising a π-conjugated conductive polymer and a polyanion, a polymer (A), and an aqueous solvent are included. It is preferable to form by coating and drying a coating liquid consisting of

  The concentration of the solid content in the coating solution containing the conductive polymer and the polymer (A) is preferably 0.5 to 30% by mass, and preferably 1 to 20% by mass, It is more preferable from the viewpoint of the smoothness of the coating film and the expression of the leak prevention effect.

  As a method of applying in a pattern, a letterpress (flexo) printing method, a stencil (screen) printing method, a planographic (offset) printing method, an intaglio (gravure) printing method, a spray printing method, an ink jet printing method, or the like can be used. . If it is a simple pattern such as a quadrangle, it may be performed by intermittent application using a die coater.

  The coating dry film thickness of the conductive polymer layer containing the conductive polymer and the polymer (A) is preferably 30 to 2000 nm. In the region of less than 100 nm, the decrease in conductivity is large, so that the thickness is more preferably 100 nm or more, and from the viewpoint of enhancing the prevention of inter-electrode current leakage with the counter electrode, it is more preferably 200 nm or more. Further, it is more preferably 1000 nm or less from the viewpoint of maintaining high transmittance.

  After coating, a drying process is appropriately performed. Although there is no restriction | limiting in particular as conditions of a drying process, It is preferable to dry-process at the temperature of the range which does not damage a base material and a conductive polymer content layer. For example, a drying process can be performed at 80 to 150 ° C. for 10 seconds to 10 minutes.

  When removing the conductive metal layer where there is no subsequent conductive polymer layer, it is necessary to separate the region with and without the conductive polymer layer, and fix the conductive polymer layer. It is necessary to.

  Examples of the immobilization method include a method in which the conductive polymer layer is not dissolved at all and a method in which the conductive polymer layer is made more insoluble. The immobilization method in the present invention is preferably a method in which the conductive polymer layer is hardly soluble or insoluble by heat treatment. This heat treatment may be performed simultaneously with the aforementioned drying treatment.

  In particular, when the polyanion is a polyanion having a sulfo group as an anionic group, an additional heat treatment is performed for 5 minutes or more at a temperature in the range of 100 to 200 ° C. after forming a film by a drying treatment after coating. It is preferable. As a result, the conductive polymer layer is fixed, and the washing resistance and solvent resistance are remarkably improved.

  In the present invention, the method of removing the conductive metal layer in the portion without the conductive polymer layer is preferably performed by physical removal or chemical etching treatment. The conductive polymer layer covers the conductive metal layer to prevent the metal fibers from falling off, and only the conductive metal layer where there is no conductive polymer layer is removed.

  The physical removal method is not particularly limited. For example, a surface or roll sponge is used to manually or automatically rub and remove the surface, or a surface cloth brush or a linear brush. Fixing the brush with the frame, contacting the electrode surface in water with this, removing it manually or automatically by rubbing up and down, after holding the electrode substrate vertically in the cleaning tank filled with the cleaning liquid, An ultrasonic cleaning method in which an ultrasonic vibrator provided on the bottom wall or side wall of the cleaning tank is vibrated and cleaned with ultrasonic energy propagating through the cleaning liquid, and the cleaning liquid is supplied to a linearly moving substrate, A flowing water type ultrasonic cleaning method in which ultrasonic waves of an appropriate frequency are propagated to the cleaning liquid for cleaning, or a high pressure cleaning nozzle that jets high pressure liquid in addition to the cleaning liquid supply means in the flowing water type ultrasonic cleaning described above Cleaning method in combination provided can be used.

  As a method of removing by chemical etching treatment, an electrode substrate in which a conductive polymer layer is formed in a pattern on the conductive metal layer is treated with an etching solution, so that a portion of the conductive metal layer where there is no conductive polymer layer. It can be obtained by etching only. As the composition of the etching solution, a general processing solution for metal etching can be used. From the viewpoint of safety in handling and etching property of metal nanowires using metal fibers, particularly silver, silver halide color photographic light sensitive. A bleach-fixing solution used for developing the material can be preferably used. The solution is preferably an aqueous solution, but may be an organic solvent such as ethanol as long as it can dissolve the bleaching agent and fixing agent described below.

  As a bleaching agent used in the bleach-fixing solution, a known bleaching agent can also be used. In particular, an organic complex salt of iron (III) (for example, a complex salt of an aminopolycarboxylic acid) or an organic compound such as citric acid, tartaric acid, malic acid or the like. Acid, persulfate, hydrogen peroxide and the like are preferable.

  Of these, an organic complex salt of iron (III) is particularly preferable from the viewpoint of rapid processing and prevention of environmental pollution. Aminopolycarboxylic acids useful for forming iron (III) organic complex salts, or salts thereof, are listed. Biodegradable ethylenediamine disuccinic acid (SS form), N- (2-carboxylate ethyl) -L-aspartic acid, β-alanine diacetic acid, methyliminodiacetic acid, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, 1,3-diaminopropanetetraacetic acid, propylenediaminetetraacetic acid, nitrilotriacetic acid, cyclohexanediaminetetraacetic acid, iminodiacetic acid In addition to glycol ether diamine tetraacetic acid, compounds represented by general formula (I) or (II) of European Patent 0789275 can be mentioned.

  These compounds may be sodium, potassium, thylium or ammonium salts. Among these compounds, ethylenediamine disuccinic acid (SS form), N- (2-carboxylateethyl) -L-aspartic acid, β-alanine diacetic acid, ethylenediaminetetraacetic acid, 1,3-diaminopropanetetraacetic acid, methylimino The diacetic acid is preferably its iron (III) complex salt. These ferric ion complex salts may be used in the form of complex salts or ferric salts such as ferric sulfate, ferric chloride, ferric nitrate, ferric ammonium sulfate, ferric phosphate. And a ferric ion complex salt may be formed in a solution using a chelating agent such as aminopolycarboxylic acid. Moreover, you may use a chelating agent in excess rather than forming a ferric ion complex salt. Among the iron complexes, aminopolycarboxylic acid iron complexes are preferable, and the addition amount is 0.01 to 1.0 mol / liter, preferably 0.05 to 0.50 mol / liter, and more preferably 0.10 to 0.00. 50 mol / liter, more preferably 0.15 to 0.40 mol / liter.

  Fixing agents used in the bleach-fixing solution are known fixing agents, that is, thiosulfates such as sodium thiosulfate and ammonium thiosulfate, thiocyanates such as sodium thiocyanate and ammonium thiocyanate, ethylenebisthioglycolic acid, 3, These are water-soluble silver halide solubilizers such as thioether compounds such as 6-dithia-1,8-octanediol and thioureas, and these can be used alone or in combination. A special bleach-fixing agent comprising a combination of a fixing agent described in JP-A-55-155354 and a large amount of halide such as potassium iodide can also be used. In the present invention, it is preferable to use thiosulfate, particularly ammonium thiosulfate. The amount of the fixing agent per liter is preferably 0.3 to 2 mol, and more preferably 0.5 to 1.0 mol.

  The pH range of the bleach-fixing solution used in the present invention is preferably from 3 to 8, more preferably from 4 to 7. In order to adjust the pH, hydrochloric acid, sulfuric acid, nitric acid, bicarbonate, ammonia, caustic potash, caustic soda, sodium carbonate, potassium carbonate and the like can be added as necessary.

  The total light transmittance of the conductive part in the transparent pattern electrode of the present invention is 70% or more, preferably 80% or more. The total light transmittance can be measured according to a known method using a spectrophotometer or the like.

  The electrical resistance value of the conductive portion in the transparent pattern electrode of the present invention is preferably 1000Ω / □ or less, more preferably 100Ω / □ or less as the surface specific resistance. The surface specific resistance can be measured based on, for example, JIS K6911, ASTM D257, etc., and can be easily measured using a commercially available surface resistivity meter.

(Transparent support)
The transparent support used in the present invention is not particularly limited, and the material, shape, structure, thickness, hardness and the like can be appropriately selected from known materials, but have high light transmittance. Preferably it is. For example, polyester resin films such as polyethylene terephthalate (PET), polyethylene naphthalate, modified polyester, polyethylene (PE) resin films, polypropylene (PP) resin films, polystyrene resin films, polyolefin resin films such as cyclic olefin resins, Vinyl resin films such as polyvinyl chloride and polyvinylidene chloride, polyvinyl acetal resin films such as polyvinyl butyral (PVB), polyether ether ketone (PEEK) resin films, polysulfone (PSF) resin films, polyether sulfone (PES) Resin film, polycarbonate (PC) resin film, polyamide resin film, polyimide resin film, acrylic resin film, triacetyl cellulose (TA ) Can be exemplified a resin film or the like, as long as it is a resin film transmittance of 80% or more at a wavelength in the visible range (380 to 780 nm), it can be preferably applied to the present invention. Among these, from the viewpoint of transparency, heat resistance, ease of handling, strength and cost, it is preferably a biaxially stretched polyethylene terephthalate film, a biaxially stretched polyethylene naphthalate film, a polyethersulfone film, or a polycarbonate film, and biaxially stretched. More preferred are polyethylene terephthalate films and biaxially stretched polyethylene naphthalate films.

  The transparent support used in the present invention can be subjected to a surface treatment or an easy adhesion layer in order to ensure the wettability and adhesion of the coating solution. A conventionally well-known technique can be used about a surface treatment or an easily bonding layer. For example, the surface treatment includes surface activation treatment such as corona discharge treatment, flame treatment, ultraviolet treatment, high frequency treatment, glow discharge treatment, active plasma treatment, and laser treatment. Examples of the easy adhesion layer include polyester, polyamide, polyurethane, vinyl copolymer, butadiene copolymer, acrylic copolymer, vinylidene copolymer, and epoxy copolymer. When the film substrate is a biaxially stretched polyethylene terephthalate film, the interface reflection between the film substrate and the easy-adhesion layer is achieved by setting the refractive index of the easy-adhesion layer adjacent to the film to 1.57 to 1.63. Since it can reduce and can improve the transmittance | permeability, it is more preferable. The method for adjusting the refractive index can be carried out by appropriately adjusting the ratio of the oxide sol having a relatively high refractive index such as tin oxide sol or cerium oxide sol and the binder resin. The easy adhesion layer may be a single layer, but may be composed of two or more layers in order to improve adhesion. In addition, a gas barrier layer may be formed in advance on the film base as necessary, or a hard coat layer may be formed in advance. As a material for forming the gas barrier layer, metal oxides such as silicon oxide, silicon nitride, silicon oxynitride, aluminum nitride, and aluminum oxide, and metal nitrides can be used. These materials have an oxygen barrier function in addition to a water vapor barrier function. In particular, silicon nitride and silicon oxynitride having favorable barrier properties, solvent resistance, and transparency are preferable. In addition, the barrier layer may have a multilayer structure as necessary. As a method for forming the gas barrier layer, a resistance heating vapor deposition method, an electron beam vapor deposition method, a reactive vapor deposition method, an ion plating method, or a sputtering method can be used depending on the material.

  The thickness of each inorganic layer constituting the gas barrier layer is not particularly limited, but typically it is preferably in the range of 5 nm to 500 nm per layer, more preferably 10 nm to 200 nm per layer.

  The gas barrier layer is provided on at least one surface of the support and is preferably provided on the electrode layer side, more preferably on both surfaces.

[Conductive metal layer]
The conductive metal layer of the present invention is characterized by containing metal fibers.

  In the metal fiber of the present invention, if the minor axis of the fiber diameter is nm, it may be rod-shaped or wire-shaped, but is preferably a wire-shaped metal nanowire from the viewpoint of conductivity and transparency.

  In general, a metal nanowire refers to a linear structure having a diameter from the atomic scale to the nm size, which contains a metal element as a main component.

As the metal nanowire used in the present invention, in order to form a long conductive path with one metal nanowire, the average length is preferably 3 μm or more, more preferably 3 to 500 μm, and particularly preferably 3 to 300 μm. It is preferable. In addition, the relative standard deviation of the length is preferably 40% or less. Moreover, although there is no restriction | limiting in particular in an average breadth, it is preferable that it is small from a transparency viewpoint, and the larger one is preferable from a conductive viewpoint. In the present invention, the average minor axis of the metal nanowire is preferably 10 to 300 nm, and more preferably 30 to 200 nm. In addition, the relative standard deviation of the minor axis is preferably 20% or less. The metal nanowires of the conductive metal layer are preferably in contact with each other, and more preferably in mesh form. Conductive metal layers in which metal nanowires are brought into contact with each other or meshed can be easily obtained by using the liquid phase film forming method. The basis weight of the metal nanowire is preferably 5 mg / m ² or more and 500 mg / m ² or less, more preferably 10 mg / m ² or more and 200 mg / m ² or less. When the amount of metal nanowires is 5 mg / m ² or more, the contact between the metal nanowires is improved and the conductivity is improved, and when the amount is 500 mg / m ² or less, the portion shielded from light by the metal nanowires is reduced. Transparency is improved.

  In the present invention, the means for producing the metal nanowire is not particularly limited, and for example, known means such as a liquid phase method and a gas phase method can be used. Moreover, there is no restriction | limiting in particular in a specific manufacturing method, A well-known manufacturing method can be used. For example, as a method for producing silver nanowires, Adv. Mater. , 2002, 14, 833-837; Chem. Mater. 2002, 14, 4736-4745, and the like. The method for producing silver nanowires can be easily produced in an aqueous solution, and since the conductivity of silver is the highest in metals, it is preferably applied as a method for producing metal nanowires according to the present invention. Can do.

[Conductive polymer layer]
The conductive polymer layer in the present invention is characterized by containing a conductive polymer and a polymer (A) comprising a π-conjugated conductive polymer and a polyanion.

  The conductive polymer according to the present invention is a conductive polymer comprising a π-conjugated conductive polymer and a polyanion. Such a conductive polymer can be easily produced by chemically oxidatively polymerizing a precursor monomer that forms a π-conjugated conductive polymer described later in the presence of an appropriate oxidizing agent, an oxidation catalyst, and a polyanion described later.

(Π-conjugated conductive polymer)
The π-conjugated conductive polymer used in the present invention is not particularly limited, and includes polythiophenes (including basic polythiophenes, the same applies hereinafter), polypyrroles, polyindoles, polycarbazoles, polyanilines, polyacetylenes, polyfurans. , Polyparaphenylene vinylenes, polyazulenes, polyparaphenylenes, polyparaphenylene sulfides, polyisothianaphthenes, polythiazyl chain conductive polymers can be used. Of these, polythiophenes and polyanilines are preferable from the viewpoints of conductivity, transparency, stability, and the like. Most preferred is polyethylene dioxythiophene.

(Π-conjugated conductive polymer precursor monomer)
The precursor monomer has a π-conjugated system in the molecule, and a π-conjugated system is formed in the main chain even when polymerized by the action of an appropriate oxidizing agent. Examples thereof include pyrroles and derivatives thereof, thiophenes and derivatives thereof, anilines and derivatives thereof, and the like.

  Specific examples of the precursor monomer include pyrrole, 3-methylpyrrole, 3-ethylpyrrole, 3-n-propylpyrrole, 3-butylpyrrole, 3-octylpyrrole, 3-decylpyrrole, 3-dodecylpyrrole, 3, 4-dimethylpyrrole, 3,4-dibutylpyrrole, 3-carboxylpyrrole, 3-methyl-4-carboxylpyrrole, 3-methyl-4-carboxyethylpyrrole, 3-methyl-4-carboxybutylpyrrole, 3-hydroxypyrrole 3-methoxypyrrole, 3-ethoxypyrrole, 3-butoxypyrrole, 3-hexyloxypyrrole, 3-methyl-4-hexyloxypyrrole, thiophene, 3-methylthiophene, 3-ethylthiophene, 3-propylthiophene, 3 -Butylthiophene, 3-hexylchi Phen, 3-heptylthiophene, 3-octylthiophene, 3-decylthiophene, 3-dodecylthiophene, 3-octadecylthiophene, 3-bromothiophene, 3-chlorothiophene, 3-iodothiophene, 3-cyanothiophene, 3-phenyl Thiophene, 3,4-dimethylthiophene, 3,4-dibutylthiophene, 3-hydroxythiophene, 3-methoxythiophene, 3-ethoxythiophene, 3-butoxythiophene, 3-hexyloxythiophene, 3-heptyloxythiophene, 3- Octyloxythiophene, 3-decyloxythiophene, 3-dodecyloxythiophene, 3-octadecyloxythiophene, 3,4-dihydroxythiophene, 3,4-dimethoxythiophene, 3,4-diethoxythiol 3,4-dipropoxythiophene, 3,4-dibutoxythiophene, 3,4-dihexyloxythiophene, 3,4-diheptyloxythiophene, 3,4-dioctyloxythiophene, 3,4-didecyloxy Thiophene, 3,4-didodecyloxythiophene, 3,4-ethylenedioxythiophene, 3,4-propylenedioxythiophene, 3,4-butenedioxythiophene, 3-methyl-4-methoxythiophene, 3-methyl -4-ethoxythiophene, 3-carboxythiophene, 3-methyl-4-carboxythiophene, 3-methyl-4-carboxyethylthiophene, 3-methyl-4-carboxybutylthiophene, aniline, 2-methylaniline, 3-isobutyl Aniline, 2-aniline sulfonic acid, 3-aniline A sulfonic acid etc. are mentioned.

(Polyanion)
The polyanion is a substituted or unsubstituted polyalkylene, a substituted or unsubstituted polyalkenylene, a substituted or unsubstituted polyimide, a substituted or unsubstituted polyamide, a substituted or unsubstituted polyester, and a copolymer thereof. It consists of a structural unit having a functional group and a structural unit having no anionic group.

  This polyanion is a solubilized polymer that solubilizes the π-conjugated conductive polymer in a solvent. The anionic group of the polyanion functions as a dopant for the π-conjugated conductive polymer, and improves the conductivity and heat resistance of the π-conjugated conductive polymer.

  The anionic group of the polyanion may be any functional group that can undergo chemical oxidation doping to the π-conjugated conductive polymer. Among them, from the viewpoint of ease of production and stability, a monosubstituted sulfate group A monosubstituted phosphate group, a phosphate group, a carboxy group, a sulfo group and the like are preferable. Furthermore, from the viewpoint of the doping effect of the functional group on the π-conjugated conductive polymer, a sulfo group, a monosubstituted sulfate group, and a carboxy group are more preferable.

  Specific examples of polyanions include polyvinyl sulfonic acid, polystyrene sulfonic acid, polyallyl sulfonic acid, polyacrylic acid ethyl sulfonic acid, polyacrylic acid butyl sulfonic acid, poly-2-acrylamido-2-methylpropane sulfonic acid, polyisoprene sulfone. Examples include acid, polyvinyl carboxylic acid, polystyrene carboxylic acid, polyallyl carboxylic acid, polyacryl carboxylic acid, polymethacryl carboxylic acid, poly-2-acrylamido-2-methylpropane carboxylic acid, polyisoprene carboxylic acid, polyacrylic acid and the like. . These homopolymers may be sufficient and 2 or more types of copolymers may be sufficient.

  Moreover, the polyanion which has a fluorine (F) in a compound may be sufficient. Specifically, Nafion (manufactured by Dupont) containing a perfluorosulfo group, Flemion (manufactured by Asahi Glass Co., Ltd.) made of perfluoro vinyl ether containing a carboxylic acid group, and the like can be mentioned.

  Among these, when the compound having a sulfo group is formed by applying and drying the conductive polymer-containing layer, the heat treatment is performed at a temperature of 100 ° C. or more and 200 ° C. or less for 5 minutes or more. It is more preferable because the cleaning resistance and solvent resistance of the coating film are remarkably improved.

  Furthermore, among these, polystyrene sulfonic acid, polyisoprene sulfonic acid, polyacrylic acid ethylsulfonic acid, and polyacrylic acid butylsulfonic acid are preferable. These polyanions have high compatibility with the binder resin, and can further increase the conductivity of the obtained conductive polymer.

  The degree of polymerization of the polyanion is preferably in the range of 10 to 100,000 monomer units, and more preferably in the range of 50 to 10,000 from the viewpoint of solvent solubility and conductivity.

  Examples of the method for producing a polyanion include a method of directly introducing an anionic group into a polymer having no anionic group using an acid, a method of sulfonating a polymer having no anionic group with a sulfonating agent, an anion And a method of producing the polymerizable group-containing polymerizable monomer by polymerization.

  Examples of the method for producing an anionic group-containing polymerizable monomer by polymerization include a method for producing an anionic group-containing polymerizable monomer in a solvent by oxidative polymerization or radical polymerization in the presence of an oxidizing agent and / or a polymerization catalyst. It is done. Specifically, a predetermined amount of the anionic group-containing polymerizable monomer is dissolved in a solvent, this is maintained at a constant temperature, and a solution in which a predetermined amount of an oxidizing agent and / or a polymerization catalyst is dissolved in the solvent is added to the solvent. The reaction is performed for a predetermined time. The polymer obtained by the reaction is adjusted to a certain concentration by the solvent. In this production method, a polymerizable monomer having no anionic group may be copolymerized with the anionic group-containing polymerizable monomer. The oxidizing agent, oxidation catalyst, and solvent used in the polymerization of the anionic group-containing polymerizable monomer are the same as those used in the polymerization of the precursor monomer that forms the π-conjugated conductive polymer.

  When the obtained polymer is a polyanionic salt, it is preferably transformed into a polyanionic acid. Examples of the method for converting to an anionic acid include an ion exchange method using an ion exchange resin, a dialysis method, an ultrafiltration method, and the like. Among these, the ultrafiltration method is preferable from the viewpoint of easy work.

  A commercially available material can be preferably used for such a conductive polymer. For example, a conductive polymer (abbreviated as PEDOT-PSS) composed of poly (3,4-ethylenedioxythiophene) and polystyrenesulfonic acid is described in H.C. C. It is commercially available from Starck as the Clevios series, from Aldrich as PEDOT-PSS 483095, 560596, and from Nagase Chemtex as the Denatron series. Polyaniline is also commercially available from Nissan Chemical as the ORMECON series. In the present invention, such an agent can also be preferably used.

  2nd. A water-soluble organic compound may be contained as a dopant. There is no restriction | limiting in particular in the water-soluble organic compound which can be used by this invention, It can select suitably from well-known things, For example, an oxygen containing compound is mentioned suitably. The oxygen-containing compound is not particularly limited as long as it contains oxygen, and examples thereof include a hydroxyl group (hydroxyl group) -containing compound, a carbonyl group-containing compound, an ether group-containing compound, and a sulfoxide group-containing compound. Examples of the hydroxyl group (hydroxyl group) -containing compound include ethylene glycol, diethylene glycol, propylene glycol, trimethylene glycol, 1,4-butanediol, and glycerin. Among these, ethylene glycol and diethylene glycol are preferable. Examples of the carbonyl group-containing compound include isophorone, propylene carbonate, cyclohexanone, and γ-butyrolactone. Examples of the ether group-containing compound include diethylene glycol monoethyl ether. Examples of the sulfoxide group-containing compound include dimethyl sulfoxide. These may be used alone or in combination of two or more, but at least one selected from dimethyl sulfoxide, ethylene glycol, and diethylene glycol is preferably used.

(Polymer (A))
The polymer (A) in the present invention has the above (repeated) unit structure.

In the above formula, X ₁ , X ₂ and X ₃ each represent a hydrogen atom or a methyl group, and R _{1 to} R ₃ each represent an alkylene group having 5 or less carbon atoms. When the total number of moles of all monomers constituting the polymer (A) is 100, l, m, and n represent the constituent ratio (mol%) of each monomer in the polymer (A), and 50 ≦ l + m + n ≦ 100, and l, m, and n are each 0-100.

  As an embodiment of the present invention, it is preferable that the number average molecular weight of the polymer (A) is in the range of 5000 to 100,000, and the content of the molecular weight is 1000 or less is in the range of 0 to 5% by mass. Furthermore, in the polymer (A), the constituent ratio m is preferably in the range of 70 ≦ m ≦ 100. The polymer (A) is preferably soluble in an aqueous solvent. The aqueous solvent refers to a solvent in which 50% by mass or more is water. Of course, pure water containing no other solvent may be used. The component other than water in the aqueous solvent is not particularly limited as long as it is a solvent compatible with water, but an alcoholic solvent can be preferably used, and isopropyl alcohol having a boiling point relatively close to water can be used. This is advantageous for the smoothness of the film to be formed.

  In this polymer (A), as a method for adjusting the content of molecules having a molecular weight of 1000 or less to 0 to 5% by mass or less, a monodisperse polymer by living polymerization is synthesized into a reprecipitation method or preparative GPC. A method of removing the low molecular weight component or suppressing the generation of the low molecular weight component can be used. In the reprecipitation method, the polymer is dissolved in a solvent in which the polymer can be dissolved and dropped into a solvent having a lower solubility than the solvent in which the polymer is dissolved, thereby precipitating the polymer and removing low molecular weight components such as monomers, catalysts, and oligomers. It is a method to do. In addition, preparative GPC is, for example, recycled preparative GPCLC-9100 (manufactured by Nihon Analytical Industrial Co., Ltd.), polystyrene gel column, and the polymer dissolved solution can be separated by molecular weight to cut the desired low molecular weight. This is how you can do it. In the living polymerization, the generation of the starting species does not change with time, and there are few side reactions such as termination reaction, and a polymer having a uniform molecular weight can be obtained. Since the molecular weight can be adjusted by the addition amount of the monomer, for example, if a polymer having a molecular weight of 20,000 is synthesized, the formation of a low molecular weight body can be suppressed. From the viewpoint of production suitability, reprecipitation and living polymerization are preferred.

The number average molecular weight and molecular weight distribution of the polymer (A) according to the present invention can be measured by generally known gel permeation chromatography (GPC). The solvent to be used is not particularly limited as long as the polymer is dissolved, and THF, DMF, and CH ₂ Cl ₂ are preferable, THF and DMF are more preferable, and DMF is more preferable. The measurement temperature is not particularly limited, but 40 ° C. is preferable.

  The number average molecular weight of the polymer (A) according to the present invention is preferably in the range of 3,000 to 2,000,000, more preferably 4,000 to 500,000, still more preferably 5,000 to 100,000. .

  The molecular weight distribution (weight average molecular weight / number average molecular weight = Mw / Mn) of the polymer (A) according to the present invention is preferably 1.01 to 1.30, more preferably 1.01 to 1.25.

  The number average molecular weight and the weight average molecular weight according to the present invention were measured using gel permeation chromatography (hereinafter abbreviated as “GPC”). The measurement conditions are as follows.

Apparatus: Wagers 2695 (Separations Module)
Detector: Waters 2414 (Refractive Index Detector)
Column: Shodex Asahipak GF-7M HQ
Eluent: Dimethylformamide (20 mM LiBr)
Flow rate: 1.0 ml / min
Temperature: 40 ° C
In the distribution obtained by GPC, the ratio of the molecular weight of 1000 or less was converted by multiplying the area of the molecular weight of 1000 or less and dividing by the area of the entire distribution.

  The living radical polymerization solvent is inactive under the reaction conditions and is not particularly limited as long as it can dissolve the monomer and the polymer to be formed, but a mixed solvent of an alcohol solvent and water is preferable. The living radical polymerization temperature varies depending on the initiator used, but is generally -10 to 250 ° C, preferably 0 to 200 ° C, more preferably 10 to 100 ° C.

  The ratio of the conductive polymer to the polymer (A) is preferably 30 to 900 parts by mass and more preferably 100 parts by mass or more when the conductive polymer is 100 parts by mass. Thereby, the conductive assist effect with respect to the conductive polymer of the polymer (A) is expressed without reducing the transmittance, and both high transparency and conductivity can be achieved.

  In the transparent pattern electrode of the present invention, since the conductive polymer layer itself is also conductive, the conductive polymer layer fills the mesh gap made of metal fibers of the conductive metal layer, so The in-plane current distribution of the portion is made uniform while maintaining the high conductivity of the conductive metal layer.

  After applying the conductive polymer layer, it is preferable to appropriately perform a heat drying treatment as an immobilization treatment. Although there is no restriction | limiting in particular as conditions of a heat drying process, It is preferable to heat-dry at the temperature of the range which does not damage a base material and a conductive polymer content layer. In particular, when the polyanion of the conductive polymer is a polyanion having a sulfonic acid, an additional heat treatment for 5 minutes or more may be performed at a temperature in the range of 100 to 200 ° C. after forming a film by coating and drying. preferable. Thereby, the washing | cleaning tolerance of a conductive polymer content layer and solvent tolerance improve remarkably. In addition, storage stability is improved.

  Although the technical reason for improving the durability of the conductive polymer-containing layer is not clear, the dehydration reaction proceeds by applying heat treatment in the presence of the conductive polymer and the polymer (A) of the present invention. It is considered that a crosslinked structure is formed. The present invention has been found that the total of l, m, and n of the monomers constituting the polymer (A) needs to be 50% or more, but it is estimated that the crosslinking density is involved. is doing.

  The treatment temperature is more preferably 110 to 160 ° C., and the treatment time is more preferably 15 minutes or more. There is no particular upper limit for the treatment time, but it is preferably 120 minutes or less in view of productivity.

[Organic electronic devices]
As a method for producing an organic electronic device in the present invention, a step of uniformly forming a conductive metal layer on a transparent support, and then a step of forming a conductive polymer layer in a pattern on the conductive metal layer A step of heat treatment, a step of removing the conductive metal layer without the conductive polymer layer to form a first electrode, a step of forming an organic functional layer on the first electrode, It has at least a step of forming a second electrode as a counter electrode thereon.

  Examples of the organic functional layer according to the present invention include an organic light emitting layer, an organic photoelectric conversion layer, a liquid crystal polymer layer, and the like without any particular limitation. This is particularly effective in the case of a light emitting layer or an organic photoelectric conversion layer.

  Hereinafter, the component in case the organic electronic device of this invention is an organic EL element and an organic photoelectric conversion element is demonstrated.

<Organic functional layer configuration>
(Organic EL device)
(Organic light emitting layer)
The organic electronic device having an organic light emitting layer in the present invention is used in combination with an organic light emitting layer such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole block layer, and an electron block layer in addition to the organic light emitting layer. Thus, a layer for controlling light emission may be provided. Since the conductive polymer-containing layer of the present invention can also function as a hole injection layer, it can also serve as a hole injection layer, but a hole injection layer may be provided independently.

  Although the preferable specific example of a structure is shown below, this invention is not limited to these.

(I) (first electrode part) / light emitting layer / electron transport layer / (second electrode part)
(Ii) (first electrode part) / hole transport layer / light emitting layer / electron transport layer / (second electrode part)
(Iii) (first electrode part) / hole transport layer / light emitting layer / hole block layer / electron transport layer / (second electrode part)
(Iv) (first electrode part) / hole transporting layer / light emitting layer / hole blocking layer / electron transporting layer / cathode buffer layer / (second electrode part)
(V) (first electrode part) / anode buffer layer / hole transport layer / light emitting layer / hole block layer / electron transport layer / cathode buffer layer / (second electrode part)
Here, the light-emitting layer may be a monochromatic light-emitting layer having a light emission maximum wavelength in the range of 430 to 480 nm, 510 to 550 nm, and 600 to 640 nm, respectively, or by laminating at least three of these light emitting layers. A white light emitting layer may be used, and a non-light emitting intermediate layer may be provided between the light emitting layers. The organic EL device of the present invention is preferably a white light emitting layer.

  In addition, as the light emitting material or doping material that can be used in the organic light emitting layer in the present invention, anthracene, naphthalene, pyrene, tetracene, coronene, perylene, phthaloperylene, naphthaloperylene, diphenylbutadiene, tetraphenylbutadiene, coumarin, oxadiazole, bisbenzo Xazoline, bisstyryl, cyclopentadiene, quinoline metal complex, tris (8-hydroxyquinolinato) aluminum complex, tris (4-methyl-8-quinolinato) aluminum complex, tris (5-phenyl-8-quinolinato) aluminum complex, Aminoquinoline metal complex, benzoquinoline metal complex, tri- (p-terphenyl-4-yl) amine, 1-aryl-2,5-di (2-thienyl) pyrrole derivative, pyran, quinacridone Rubrene, distyrylbenzene derivatives, di still arylene derivatives, and various fluorescent dyes and rare earth metal complex, there are phosphorescent materials, but is not limited thereto. It is also preferable to include 90 to 99.5 parts by mass of a light emitting material selected from these compounds and 0.5 to 10 parts by mass of a doping material. The organic light emitting layer is prepared by a known method using the above materials and the like, and examples thereof include vapor deposition, coating, and transfer. The thickness of the organic light emitting layer is preferably 0.5 to 500 nm, particularly preferably 0.5 to 200 nm.

[Second electrode part]
The second electrode of the present invention serves as a cathode in the organic EL device. The second electrode portion of the present invention may be a single conductive material layer, but in addition to a conductive material, a resin that holds these may be used in combination. As the conductive material of the second electrode portion, a material having a work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al ₂ O ₃ ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like.

Among these, from the point of durability against electron injection and oxidation, etc., a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this, for example, a magnesium / silver mixture, Magnesium / aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al ₂ O ₃ ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred. The cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering. The sheet resistance as the cathode is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 to 200 nm.

  If a metal material is used as the conductive material of the second electrode part, the light coming to the second electrode side is reflected and returns to the first electrode part side. The metal nanowire of the first electrode part scatters or reflects part of the light backward, but by using a metal material as the conductive material of the second electrode part, this light can be reused and the extraction efficiency is improved. .

<Organic photoelectric conversion element>
The organic photoelectric conversion element has a structure in which a first electrode portion, a photoelectric conversion layer (hereinafter also referred to as a bulk heterojunction layer) having a bulk heterojunction structure (p-type semiconductor layer and n-type semiconductor layer), and a second electrode portion are stacked. Have.

  An intermediate layer such as an electron transport layer may be provided between the photoelectric conversion layer and the second electrode portion.

[Photoelectric conversion layer]
The photoelectric conversion layer is a layer that converts light energy into electric energy, and constitutes a bulk heterojunction layer in which a p-type semiconductor material and an n-type semiconductor material are uniformly mixed. The p-type semiconductor material functions relatively as an electron donor (donor), and the n-type semiconductor material functions relatively as an electron acceptor (acceptor).

  Here, the electron donor and the electron acceptor are “an electron donor in which, when light is absorbed, electrons move from the electron donor to the electron acceptor to form a hole-electron pair (charge separation state)”. And an electron acceptor ”, which does not simply donate or accept electrons like an electrode, but donates or accepts electrons by a photoreaction.

  Examples of the p-type semiconductor material include various condensed polycyclic aromatic compounds and conjugated compounds.

  As the condensed polycyclic aromatic compound, for example, anthracene, tetracene, pentacene, hexacene, heptacene, chrysene, picene, fluorene, pyrene, peropyrene, perylene, terylene, quaterylene, coronene, ovalene, sarkham anthracene, bisanthene, zestrene, heptazelene, Examples thereof include compounds such as pyranthrene, violanthene, isoviolanthene, cacobiphenyl, anthradithiophene, and derivatives and precursors thereof.

  Examples of the conjugated compound include polythiophene and its oligomer, polypyrrole and its oligomer, polyaniline, polyphenylene and its oligomer, polyphenylene vinylene and its oligomer, polythienylene vinylene and its oligomer, polyacetylene, polydiacetylene, tetrathiafulvalene compound, quinone Compounds, cyano compounds such as tetracyanoquinodimethane, fullerenes and derivatives or mixtures thereof.

  In particular, among polythiophene and oligomers thereof, thiophene hexamer, α-seccithiophene α, ω-dihexyl-α-sexualthiophene, α, ω-dihexyl-α-kinkethiophene, α, ω-bis (3- An oligomer such as butoxypropyl) -α-sexithiophene can be preferably used.

  Other examples of the polymer p-type semiconductor include polyacetylene, polyparaphenylene, polypyrrole, polyparaphenylene sulfide, polythiophene, polyphenylene vinylene, polycarbazole, polyisothianaphthene, polyheptadiyne, polyquinoline, polyaniline, and the like. Japanese Laid-Open Patent Publication No. 2006-36755 and other substituted-unsubstituted alternating copolymer polythiophenes, Japanese Patent Laid-Open No. 2007-51289, Japanese Patent Laid-Open No. 2005-76030, J. Pat. Amer. Chem. Soc. , 2007, p4112, J.A. Amer. Chem. Soc. , 2007, p7246, etc., polymers having a condensed ring thiophene structure, WO2008 / 000664, Adv. Mater. , 2007, p4160, Macromolecules, 2007, Vol. Examples thereof include thiophene copolymers such as 40 and p1981.

  Furthermore, porphyrin, copper phthalocyanine, tetrathiafulvalene (TTF) -tetracyanoquinodimethane (TCNQ) complex, bisethylenedithiotetrathiafulvalene (BEDTTTTF) -perchloric acid complex, BEDTTTF-iodine complex, TCNQ-iodine complex, etc. Organic molecular complexes of C60, C70, C76, C78, C84, fullerenes such as SWNT, carbon nanotubes such as SWNT, merocyanine dyes, dyes such as hemicyanine dyes, and σ-conjugated polymers such as polysilane and polygermane Organic / inorganic hybrid materials described in Kai 2000-260999 can also be used.

  Among these π-conjugated materials, at least one selected from the group consisting of condensed polycyclic aromatic compounds such as pentacene, fullerenes, condensed ring tetracarboxylic acid diimides, metal phthalocyanines, and metal porphyrins is preferable. Further, pentacenes are more preferable.

  Examples of pentacenes include substituents described in International Publication No. 03/16599, International Publication No. 03/28125, US Pat. No. 6,690,029, Japanese Patent Application Laid-Open No. 2004-107216, and the like. A pentacene derivative described in U.S. Patent Application Publication No. 2003/136964 and the like; Amer. Chem. Soc. , Vol127. Examples thereof include substituted acenes described in No. 14.4986 and the like and derivatives thereof.

  Among these compounds, compounds that have high solubility in organic solvents to the extent that solution processing is possible, can form a crystalline thin film after drying, and can achieve high mobility are preferable. Such compounds include those described in J. Org. Amer. Chem. Soc. , Vol. 123, p9482; Amer. Chem. Soc. , Vol. 130 (2008), no. No. 9, 2706 and the like, acene-based compounds substituted with a trialkylsilylethynyl group, a pentacene precursor described in U.S. Patent Application Publication No. 2003/136964, etc., and Japanese Patent Application Laid-Open No. 2007-224019 Examples include precursor type compounds (precursors) such as porphyrin precursors.

  Among these, the latter precursor type can be preferably used.

  This is because the precursor type is insolubilized after conversion, so when forming the hole transport layer, electron transport layer, hole block layer, electron block layer, etc. on the bulk hetero junction layer by solution process, bulk hetero junction This is because the layer does not dissolve and the material constituting the layer and the material forming the bulk heterojunction layer are not mixed, and further improvement in efficiency and life can be achieved. .

  The p-type semiconductor material is a compound that has undergone a chemical structural change by a method such as exposing the precursor of the p-type semiconductor material to vapor of a compound that causes heat, light, radiation, or a chemical reaction, and converted into a p-type semiconductor material. Preferably there is. Among them, compounds that cause a scientific structural change by heat are preferred.

  Examples of n-type semiconductor materials include fullerene, octaazaporphyrin, p-type semiconductor perfluoro compounds (perfluoropentacene, perfluorophthalocyanine, etc.), naphthalenetetracarboxylic anhydride, naphthalenetetracarboxylic diimide, perylenetetracarboxylic acid Examples thereof include polymer compounds containing an anhydride, an aromatic carboxylic acid anhydride such as perylenetetracarboxylic acid diimide, or an imidized product thereof as a skeleton.

  Among these, fullerene-containing polymer compounds are preferable. Fullerene-containing polymer compounds include fullerene C60, fullerene C70, fullerene C76, fullerene C78, fullerene C84, fullerene C240, fullerene C540, mixed fullerene, fullerene nanotubes, multi-walled nanotubes, single-walled nanotubes, nanohorns (conical), etc. Examples thereof include a polymer compound having a skeleton. As the fullerene-containing polymer compound, a polymer compound (derivative) having fullerene C60 as a skeleton is preferable.

  The fullerene-containing polymers are roughly classified into polymers in which fullerene is pendant from a polymer main chain and polymers in which fullerene is contained in the polymer main chain. Fullerene is contained in the polymer main chain. Are preferred.

  This is not because fullerene is contained in the main chain because the polymer does not have a branched structure, so that it can be packed with high density when solidified, resulting in high mobility. It is estimated.

  Examples of a method for forming a bulk heterojunction layer in which an electron acceptor and an electron donor are mixed include a vapor deposition method and a coating method (including a casting method and a spin coating method).

  As a form which uses the photoelectric conversion element of this invention as photoelectric conversion materials, such as a solar cell, a photoelectric conversion element may be utilized by a single layer and may be laminated | stacked and utilized (tandem type).

  Further, since the photoelectric conversion material is not deteriorated by oxygen, moisture, or the like in the environment, the photoelectric conversion material is preferably sealed by a known method.

  EXAMPLES Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited thereto. In addition, although the display of "%" is used in an Example, unless otherwise indicated, "mass%" is represented.

Example 1
<< Preparation of transparent pattern electrode >>
[Preparation of Transparent Pattern Electrode TCF-1; Comparative Example]
As metal fibers, Adv. Mater. , 2002, 14, 833 to 837, a silver nanowire having an average minor axis of 75 nm and an average length of 35 μm is produced using polyvinylpyrrolidone K30 (molecular weight: 50,000; manufactured by ISP). After silver nanowires are filtered and washed with an outer filtration membrane, hydroxypropylmethylcellulose 60SH-50 (manufactured by Shin-Etsu Chemical Co., Ltd.) is redispersed in an aqueous solution containing 25% by mass with respect to silver, Prepared.

The prepared silver nanowire dispersion is applied onto a 100 μm-thick polyethylene terephthalate film support having gas barrier layers on both sides, and the silver nanowire dispersion is applied to a spin coater so that the amount of silver nanowires is 50 mg / m ^2. Applied and dried. Subsequently, the silver nanowire coating layer was calendered, and a square tile-shaped transparent pattern electrode TCF-1 having a conductive part pattern side length of 20 mm and a pattern interval of 10 mm was produced by a known photolithography method. When the conductive part of the produced transparent pattern electrode TCF-1 was visually confirmed, coloring of the conductive part considered to be a resist residue and partial detachment of metal fibers were observed.

[Preparation of Transparent Pattern Electrode TCF-2; Comparative Example]
A gravure coating machine K printing proofer (manufactured by Matsuo Sangyo Co., Ltd.) was attached with a plate on which a square tile pattern with a printed pattern side length of 20 mm and a pattern interval of 10 mm was attached, and the silver nanowire dispersion liquid used in the production of TCF-1 On a polyethylene terephthalate film support having a thickness of 100 μm, adjusted to 0.1 Pa · s (100 cP) with sodium carboxymethylcellulose (manufactured by SIGMA-ALDRICH; C5013, hereinafter abbreviated as CMC) and provided with gas barrier layers on both sides In addition, gravure printing was performed by adjusting the number of times of printing so that the basis weight of the silver nanowires was 50 mg / m ² , thereby producing a square tile-shaped transparent pattern electrode TCF-2.

[Preparation of Transparent Pattern Electrode TCF-3; Present Invention]
The silver nanowire dispersion used in the production of TCF-1 was placed on a 100 μm thick polyethylene terephthalate film support having gas barrier layers on both sides so that the basis weight of the silver nanowire was 50 mg / m ^2. The dispersion was applied using a spin coater and dried. Subsequently, after applying a calender treatment to the silver nanowire coating layer, the conductive polymer liquid P-1 prepared by the following method was applied to a gravure coating machine K printing proofer (manufactured by Matsuo Sangyo Co., Ltd.). A plate on which a square tile pattern having a length of 20 mm and a pattern interval of 10 mm is attached, and the number of times of printing is adjusted on the silver nanowire coating layer so that the dry film thickness becomes 300 nm. A heat treatment was performed for 20 minutes to form a square tile-like conductive polymer layer pattern. Furthermore, after removing the silver nanowire coating layer of the obtained film without the conductive polymer layer by manually rubbing in water using a roll sponge, washing and drying, a square tile-shaped transparent pattern electrode TCF-3 was produced.

(Preparation of conductive polymer liquid P-1)
(Synthesis of poly (2-hydroxyethyl acrylate))
2-Bromoisobutyryl bromide (7.3 g, 35 mmol), triethylamine (2.48 g, 35 mmol) and THF (20 ml) were added to a 50 ml three-necked flask, and the internal temperature was kept at 0 ° C. with an ice bath. In this solution, 30 ml of 33% THF solution of oligoethylene glycol (10 g, 23 mmol, ethylene glycol units 7-8, manufactured by Laporte Specialties) was added dropwise. After stirring for 30 minutes, the solution was brought to room temperature and further stirred for 4 hours. After THF was removed under reduced pressure by a rotary evaporator, the residue was dissolved in diethyl ether and transferred to a separatory funnel. Water was added and the ether layer was washed three times, and then the ether layer was dried with MgSO ₄ . The ether was distilled off under reduced pressure using a rotary evaporator to obtain 8.2 g (yield 73%) of initiator 1.

  5 ml of initiator 1 (500 mg, 1.02 mmol), 2-hydroxyethyl acrylate (4.64 g, 40 mmol, manufactured by Tokyo Chemical Industry Co., Ltd.), 50:50 v / v% methanol / water mixed solvent was put into a Schlenk tube, The Schlenk tube was immersed in liquid nitrogen under reduced pressure for 10 minutes. The Schlenk tube was taken out of liquid nitrogen and replaced with nitrogen after 5 minutes. After performing this operation three times, bipyridine (400 mg, 2.56 mmol) and CuBr (147 mg, 1.02 mmol) were added under nitrogen, and the mixture was stirred at 20 ° C. After 30 minutes, the reaction solution was dropped onto a 4 cm Kiriyama funnel with filter paper and silica, and the reaction solution was recovered under reduced pressure. The solvent was distilled off under reduced pressure using a rotary evaporator and then dried under reduced pressure at 50 ° C. for 3 hours. As a result, 2.60 g (yield 84%) of water-soluble binder resin 1 having a number average molecular weight of 13,100, a molecular weight distribution of 1.17, and a content of number average molecular weight <1000 of 0% was obtained.

The structure and molecular weight were measured by ¹ H-NMR (400 MHz, manufactured by JEOL Ltd.) and GPC (Waters 2695, manufactured by Waters), respectively.

<GPC measurement conditions>
Apparatus: Wagers 2695 (Separations Module)
Detector: Waters 2414 (Refractive Index Detector)
Column: Shodex Asahipak GF-7M HQ
Eluent: Dimethylformamide (20 mM LiBr)
Flow rate: 1.0 ml / min
Temperature: 40 ° C
The obtained water-soluble binder resin 1 was dissolved in pure water to prepare a water-soluble binder resin 1 aqueous solution having a solid content of 50%.

  Next, a conductive polymer liquid P-1 was prepared as follows.

(Conductive polymer liquid P-1)
Water-soluble binder resin 1 aqueous solution (solid content 50% aqueous solution) 0.14 g
PEDOT-PSS CLEVIOS PH510 (solid content 1.89%) (manufactured by HC Starck) 1.59 g
[Preparation of Transparent Pattern Electrode TCF-4; Present Invention]
In TCF-3, the silver nanowire coating layer of the obtained film without the conductive polymer layer is removed by ultrasonic cleaning in water for 5 minutes using an ultrasonic cleaner US-10PS (manufactured by SND). Thereafter, a square tile-shaped transparent pattern electrode TCF-4 was produced in the same manner as TCF-3 except that it was washed with water and dried.

[Preparation of Transparent Pattern Electrode TCF-5; Present Invention]
In TCF-3, the silver nanowire coating layer of the obtained film without the conductive polymer layer was removed by immersing in silver etching solution BF-1 prepared by the following method for 10 seconds, followed by washing with water and drying. A square tile-shaped transparent pattern electrode TCF-5 was produced in the same manner as TCF-3 except for the above.

<Preparation of silver etching solution BF-1>
Ethylenediaminetetraacetic acid ferric ammonium 60g
Ethylenediaminetetraacetic acid 2g
Sodium metabisulfite 15g
70g ammonium thiosulfate
Maleic acid 5g
Finished to 1 L with pure water, adjusted pH to 5.5 with sulfuric acid or ammonia water, and prepared silver etching solution BF-1.

[Preparation of Transparent Pattern Electrode TCF-6; Present Invention]
In TCF-5, a square tile-shaped transparent pattern electrode TCF- was used in the same manner as TCF-5 except that the silver nanowire dispersion liquid was applied using a spin coater so that the basis weight of silver nanowires was 100 mg / m ^2. 6 was produced.

[Preparation of Transparent Pattern Electrode TCF-7; Present Invention]
In TCF-5, except that the conductive polymer liquid P-1 is changed to the conductive polymer liquid P-2 prepared as follows, the square tile-shaped transparent pattern electrode TCF-7 is the same as TCF-5. Was made.

(Conductive polymer liquid P-2)
Polyhydroxyethylacrylamide (Number average molecular weight 20,000, solid content 50% aqueous solution)
0.14g
PEDOT-PSS CLEVIOS PH510 (solid content 1.89%) (manufactured by HC Starck) 1.59 g
[Preparation of Transparent Pattern Electrode TCF-8; Present Invention]
In TCF-5, except that the conductive polymer liquid P-1 is changed to the conductive polymer liquid P-3 prepared as follows, the square tile-shaped transparent pattern electrode TCF-8 is the same as TCF-5. Was made.

(Conductive polymer liquid P-3)
Polyhydroxyethyl vinyl ether (number average molecular weight 20,000, solid content 50% aqueous solution)
0.14g
PEDOT-PSS CLEVIOS PH510 (solid content 1.89%) (manufactured by HC Starck) 1.59 g
[Production of Transparent Pattern Electrode TCF-9; Comparative Example]
In TCF-5, a square was formed in the same manner as TCF-5, except that the water-soluble binder resin was a conductive polymer liquid P-5 made of a copolymer of hydroxyethyl acrylate (49 mol%) and methyl acrylate (51 mol%). When the tile-shaped transparent pattern electrode TCF-9 was produced, the conductive polymer layer was eluted during immersion for 10 seconds in the silver etching solution BF-1, and the pattern electrode could not be produced.

[Preparation of Transparent Pattern Electrode TCF-10; Present Invention]
A square tile-shaped transparent pattern electrode TCF-10 was produced in the same manner as TCF-5, except that the conductive polymer liquid P-4 prepared as described below was used as the conductive polymer liquid P-4.

(Preparation of PEDOT / Nafion dispersion)
142.68 g (16.03 mmol of Nafion monomer units SE-10072: manufactured by Dupont) and 173.45 g of deionized water were poured into a 500 ml flask.

  A ferric sulfate solution was prepared by dissolving 0.0667 g ferric sulfate hydrate with deionized water to a total mass of 12.2775 g.

  Then 1.40 g of ferric sulfate solution and 1.72 g (7.224 mmol) of sodium persulfate were added to the flask and stirred well. The flask contents were poured into a 500 ml 3-neck flask. The mixture was then stirred in the reaction vessel for 30 minutes. 0.63 ml (5.911 mmol) of 3,4-ethylenedioxythiophene was added to the reaction mixture with stirring. The polymerization was allowed to proceed with stirring at about 23 ° C. After 1 hour and 7 minutes, the polymerization liquid turned very dark blue.

  To 100 g of this aqueous PEDOT / Nafion polymerization liquid, 5.0 g of anion exchanger (manufactured by Bayre AG; Lewatit MP62) and 5.0 g of cation exchanger (manufactured by Bayer AG; Lewatit S100) were added and stirred for 8 hours. . The ion exchanger was removed by filtration.

  Based on the mass analysis of the dried solid, 10 g of PEDOT / Nafion dispersion having a solid content of 1.89% by mass was prepared.

(Conductive polymer liquid P-4)
Water-soluble binder resin 1 aqueous solution (solid content 20% aqueous solution) 0.35 g
1.59 g of PEDOT / Nafion dispersion (solids 1.89%)
[Preparation of Transparent Pattern Electrode TCF-11; Present Invention]
A gravure coating machine K printing proofer (manufactured by Matsuo Sangyo Co., Ltd.) is attached with a plate on which a square tile pattern with a printed pattern side length of 20 mm and a pattern interval of 10 mm is attached, and a square tile transparent pattern electrode TCF-2 made of silver nanowires After forming a square tile-shaped conductive polymer layer pattern by performing gravure printing by adjusting the number of times of printing so that the dry film thickness is 300 nm so that the conductive polymer liquid P-1 overlaps just above Then, a heat treatment was performed at 120 ° C. for 20 minutes on a hot plate to produce a square tile-shaped transparent pattern electrode TCF-11.

[Preparation of Transparent Pattern Electrode TCF-12; Present Invention]
In TCF-5, a square was formed in the same manner as TCF-5 except that the water-soluble binder resin was a conductive polymer liquid P-6 made of a copolymer of hydroxyethyl acrylate (70 mol%) and methyl acrylate (30 mol%). A tile-shaped transparent pattern electrode TCF-12 was produced.

<< Measurement and evaluation of transparent pattern electrode >>
The transmittance and surface specific resistance of the conductive part of each produced transparent pattern electrode were measured and evaluated by the following methods.

(Transmittance)
For the transmittance, the total light transmittance of the transparent electrode was measured using AUTOMATIC ZEMETER (MODEL TC-HIIIDP) manufactured by Tokyo Denshoku.

(Surface resistivity)
For the surface resistivity, the surface resistivity of the transparent electrode was measured by a four-terminal method using a resistivity meter Loresta GP manufactured by Dia Instruments.

<< Production of organic EL element >>
In each of the produced transparent pattern electrodes, a square tile-shaped transparent pattern having a pattern side length of 20 mm is cut into a 30 mm square so as to be arranged in the center, and used for the first electrode (anode). Was made.

  The cut out transparent pattern electrode was set in a commercially available vacuum deposition apparatus, and each of the deposition materials in the vacuum deposition apparatus was filled with the constituent material of each layer in the optimum amount for device fabrication. The evaporation crucible used was made of a resistance heating material made of molybdenum or tungsten.

  Subsequently, each light emitting layer was provided in the following procedures.

First, after depressurizing to a vacuum degree of 1 × 10 ⁻⁴ Pa, the energization crucible containing the following α-NPD was energized and heated, evaporated at a deposition rate of 0.1 nm / second, and a 30 nm hole transport layer. Was established.

  Ir-1 and Ir-14 and the following compound 1-7 were co-deposited at a deposition rate of 0.1 nm / sec so that the following Ir-1 would be 13% by mass and the following Ir-14 would be 3.7% by mass. Then, a green-red phosphorescent light emitting layer having an emission maximum wavelength of 622 nm and a thickness of 10 nm was formed.

  Subsequently, E-66 and compound 1-7 were co-evaporated at a deposition rate of 0.1 nm / second so that the following E-66 was 10% by mass, and a blue phosphorescent light emitting layer having an emission maximum wavelength of 471 nm and a thickness of 15 nm. Formed.

  Thereafter, the following M-1 was deposited to a thickness of 5 nm to form a hole blocking layer, and CsF was co-deposited with M-1 so that the film thickness ratio was 10%. Formed.

  The compounds used for forming each layer are shown below.

On the formed electron transport layer, Al was vapor-deposited under a vacuum of 5 × 10 ⁻⁴ Pa as a material for forming an external lead terminal for the first electrode and a second electrode (cathode) of 15 mm × 15 mm, and the thickness A second electrode of 100 nm was formed.

Furthermore, an adhesive is applied to the periphery of the second electrode except for the end portion so that external terminals for the first electrode and the second electrode can be formed, and Al ₂ O ₃ is deposited with a thickness of 300 nm using polyethylene terephthalate as a base material. After pasting the flexible sealing member, the adhesive was cured by heat treatment to form a sealing film, and an organic EL element having a light emitting area of 15 mm × 15 mm was produced.

About each produced organic EL element, the direct measure voltage was applied using the KEITHLEY source measure unit 2400 type | mold, it was made to light-emit so that a brightness | luminance might be set to 1000 cd / m < ² >, and the light emission state was evaluated visually.

  The results of measurement and evaluation are shown in Table 1.

  As is clear from the results shown in Table 1, the transparent pattern electrode that does not have the configuration of the present invention has low conductivity, a decrease in transmittance, and the transparent pattern electrode that does not have the configuration of the present invention. The organic EL device manufactured using the light emitting device does not emit light due to current leakage or nonuniform light emission due to electric field concentration. On the other hand, the transparent pattern electrode of the present invention is excellent in transparency and conductivity, and the organic EL device using the transparent pattern electrode of the present invention is capable of preventing current leakage by the conductive polymer layer and in-plane current of the conductive part. All can emit light uniformly within the light emitting area due to the effect of uniform distribution.

DESCRIPTION OF SYMBOLS 1 Conductive metal layer 2 Conductive polymer layer 10 Transparent support 20 Transparent pattern electrode

Claims (8)

A conductive polymer layer having a conductive metal layer containing metal fibers on a transparent support, and further comprising a conductive polymer comprising a π-conjugated conductive polymer and a polyanion, and the following polymer (A) A transparent pattern electrode, wherein the conductive metal layer and the conductive polymer layer have a pattern image-like laminated structure.

[Wherein, X ₁ , X ₂ and X ₃ each represent a hydrogen atom or a methyl group, and R _{1 to} R ₃ each represent an alkylene group having 5 or less carbon atoms. When the total number of moles of all monomers constituting the polymer (A) is defined as 100, l, m, and n represent the constituent ratio (mol%) of each monomer constituting the polymer (A), and 50 <= L + m + n <= 100 and l, m, and n are 0-100, respectively. ]   The transparent pattern electrode according to claim 1, wherein the metal fiber is a metal nanowire.   The method for producing a transparent pattern electrode according to claim 1 or 2, wherein a step of uniformly forming a conductive metal layer on a transparent support, and then a conductive polymer layer on the conductive metal layer. It is characterized by comprising at least a step of forming a pattern, a step of fixing the conductive polymer layer, and a step of removing a portion of the conductive metal layer on the support where there is no conductive polymer layer. A method for producing a transparent pattern electrode.   4. The method for producing a transparent pattern electrode according to claim 3, wherein the step of fixing the conductive polymer layer is a heat treatment step.   The method for producing a transparent pattern electrode according to claim 3 or 4, wherein the step of removing the conductive metal layer is performed by physical removal.   The method for producing a transparent pattern electrode according to claim 3 or 4, wherein the step of removing the conductive metal layer is performed by a chemical etching process.   The step of forming an organic functional layer on the first electrode using the electrode formed by the method for producing a transparent pattern electrode according to any one of claims 3 to 6, and forming the organic functional layer A method for producing an organic electronic device, comprising at least a step of forming a second electrode as a counter electrode thereon.   An organic electronic device formed by the method for manufacturing an organic electronic device according to claim 7.

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